The Solar Roadmap - Applied Materials · The Solar Roadmap Continuing Cost Reduction Charlie Gay,...
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Transcript of The Solar Roadmap - Applied Materials · The Solar Roadmap Continuing Cost Reduction Charlie Gay,...
External Use
The Solar Roadmap Continuing Cost Reduction
Charlie Gay, Ph.D.
President, Applied Solar
External Use
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Safe Harbor Statement
This presentation contains forward-looking statements, including those regarding
Applied’s solar PV market outlook and opportunities, and all other statements that are not
historical facts. These statements are subject to known and unknown risks and
uncertainties that could cause actual results to differ materially from those expressed or
implied by such statements, including: the level of demand for Applied products, which is
subject to various factors such as uncertain global economic and industry conditions,
government renewable energy policies and incentives, end demand for solar PV products,
and customers’ new technology and capacity requirements; our ability to (i) develop,
deliver and support a broad range of products and expand our markets, (ii) timely align
cost structure with business conditions, and (iii) attract, motivate and retain key
employees; and other risks described in Applied’s SEC filings. All forward-looking
statements are based on management’s estimates, projections and assumptions as of
March 28, 2012, and Applied undertakes no obligation to update any forward-looking
statements.
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100
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1 0.1 10-2 10-3 10-4 10 100 103
Cumulative Installations (GW)
Ave
rag
e S
ale
s P
ric
e (
$/W
) Avg. Module Price
PV Learning Curve
BOS
System Price
10
10 15 18 20 ɳcell (%) =
400 300 180 125 thickness (µm) = 50
The Predictable Cost Reduction of PV
4
65 GW
Source: Navigant Consulting, NREL, Solarbuzz, pvXchange, Morgan Stanley, New Energy Finance
Efficiency and cost
reduction now coupled
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1 10 1,000 100
0.30
3.00
Mo
du
le A
SP
($
20
10
/W)
Cumulative Production (GW)
Zooming in on Recent Times
Source: R. Swanson SunPower
2005
2011
$0.99/W
$0.75/W
$1.32/W
Actual
2020F
Q3 2012 Quote
$0.50/W
iSuppli
Piper Jaffray
DoE SunShot
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B 0
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Crystalline Silicon Cell Evolution
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Front / Back Contact Back Contact
Valu
e In
dex
Conventional Cell
Double Print (DP)
Selective Emitter (SE)
Implanted Junction
2-Side Passivation
Optimal Light Trapping
2011 2010 2012
GEN 1 GEN 1.5 GEN 2
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What is Double Print ?
Minimize front grid on solar cell; ~7% of solar cell area
Narrower taller lines increase light capturing area while maintaining low resistive losses, enables cell efficiency gain by up to 0.3%
Use less paste with optimized printing, lowering cost
Si
n+
P-type
Double Print Cell
Ag
Ag
<70µm
>30µm
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Reduces Cost Per Watt by
Increasing Efficiency and Reducing Paste
Two carefully aligned screen printed conductors that:
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B 0
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What is Selective Emitter ?
Selective Emitter Cell Conventional Cell
Lower dopant concentration in the field region reduces carrier recombination and improves the cell current
Higher dopant concentration under the front metallization maintains lower contact resistance
Si
n+
p-type
ARC /
Passivation Ag ARC /
Passivation Ag
Si p-type
n++ Highly Doped n+ Lightly
Doped
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Increases Cell Efficiency and Process Window
Patterned dopant across the cell surface:
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What is an Implanted Junction ?
0%
1%
2%
3%
4%
5%
6%
7%
8%
62 97
Implant Wafer to Wafer
POCl Wafer to Wafer
Sheet Resistance, W / sq.
Improved Repeatability
Replaces conventional furnace doping (i.e. POCl3)
Reduces cost by eliminating PSG removal and edge isolation steps
Creates uniform high efficiency junctions in cells
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> 19% Cell Efficiency, Tighter Manufacturing Control
Highly controlled dopant profile that:
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What is 2 Side Passivation?
Front-side gains:
Reducing shading
Maximizing light absorption
Optimizing the emitter junction
Reduces backside carrier
recombination losses
Improves backside reflection
2-Side passivation cell: PERC (Passivated Emitter Rear Contact)
Si
n+ Lightly Doped Junction
p-type
ARC /
Passivation Ag
P-type
Al
Local Back
Surface Field
n+
Back Passivation
ARC /
Passivation
Ag
n++
P-type
Al
n+
Back Surface Field
ARC /
Passivation
Ag
n++
Advanced Cell 2 Side Passivated Cell
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Cell Efficiency Gains from the Backside of the Wafer
Adds further efficiency increase, especially for long wavelength light :
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Crystalline Silicon Cell Evolution
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Front / Back Contact Back Contact
Valu
e In
dex
Conventional Cell
Double Print (DP)
Selective Emitter (SE)
Implanted Junction
2-Side Passivation
Optimal Light Trapping
2011 2010 2012
Surface Mount Surface Mount Cell
IBC1
EWT2
MWT3
GEN 1 GEN 1.5 GEN 2
1IBC: Interdigitated Back Contact - 2EWT: Emitter Wrap Through - 3MWT: Metal Wrap Through
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PERC
N-MWT-PERT
Multi MWT+SE
Multi MWT
Mono MWT
Std. Multi
HJ
N-EWT-PERL
IBC
MWT-PERC
N-PERL
N-PERT
Mono
Multi+SE
EWT-PERC
EWT-PERC
Multi
Mono
N
22%
20%
18%
16%
14% 15% 17% 19% 21% 23%
Cell Efficiency
Mo
du
le E
ffic
ien
cy
Gen 1 Module
Gen 2 Module
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Gen 2 Efficiency Gain Applies To All
Current And Future c-Si Cell Technologies
Module Level Efficiency Gains
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GEN 2 GEN 1 / 1.5 GEN 3
Kerfless
IBC
IBC-HJ
Kerfless Back Contact
Double H Busbar
Triple H Busbar
Valu
e In
dex
MWT
EWT
IBC
Benchmark Cell Evolutionary Sequence
150µm 20µm
Front / Back Contact
Flex-Circuit
Thickness Reduction
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B 0
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GEN 2 GEN 1 / 1.5 GEN 3
Kerfless
IBC
IBC-HJ
Kerfless Back Contact
Double H Busbar
Triple H Busbar
Valu
e In
dex
MWT
EWT
IBC
Benchmark Cell Evolutionary Sequence
150µm 20µm
Front / Back Contact
Flex-Circuit
Thickness Reduction
p-type Single Crystal Silicon
Multi Cast Mono
n-type
n-type EPI Mono In-situ doping
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