The 1974 RCA Triac SCR and Diacs Data Book

Thyristors, Rectifiersand DiacsSelection GuideDataApplication Notes

STOCKED AND SOLD BY

electroosonlII~

\y;~ I~Industrial Sales(Toronto) Limited543 Yonge Street,Toronto, Canada M4Y 1Y6Order Desk 961-8800Telex 06-22030

A New Approach To Data Service ...and Customer Service

Seven textbook·size volumes covering all current commercialRCA solid-state devices (through January 1, 1974) $2.00 each *

SSD-201 B Linear Integrated Circuits and MOS Devices(Data only) 792 pages

SSD-202B Linear Integrated Circuits and MOS Devices(Application Notes only). . . . . . . . . . . . . . . .. 456 pages

SSD-203B COS/MOS Digital Integrated Circuits 528 pagesSSD-204B Power Transistors and Power Hybrid Circuits. 896 pagesSSD-205B RF Power Devices. . . . . . . . . . . . . . . . . . . . .. 544 pagesSSD-206B Thyristors, Rectifiers, and Diacs 536 pagesSSD-207B High-Reliability Devices 576 pages

Announcement Newsletter: "What's New in Solid State" AvailableFREE to all DATABOOK users ... see pages 3 and 4

"Bingo-type Response-Card Service" included with NewsletterAvailable FREE to all DATABOOK users ... see pages 3 and 4

Update Mailing Service for IC's, power devices, or entire productline ... see pages 3 and 4

non Solid State'~A DA~ABOOK' •• Senes

Thyristors, Rectifiers,and Diacs

This DATABOOK contains complete data and related appli-cation notes on thyristors, rectifiers, and diacs presentlyavailable from RCA Solid State Division as standard products.The new RCA type-numbering system for these devices isexplained, and product matrix charts are given on pages 14-24for ease of type selection. Data sheets are then grouped in thefollowing categories: (a) triacs, (b) silicon controlled rectifiers,(c) rectifiers, (d) diacs. Application notes are included innumerical order following the data sheets.

A feature of this DATABOOK is the complete Guide to RCASolid State Devices at the back of the book. This sectionincludes a developmental-to-commercial-number cross-referenceindex, a comprehensive subject index, and a complete index toall standard devices in the solid-state product line: linear inte-grated circuits, MOS field-effect (MOS/F ET) devices, COS/MOSintegrated circuits, power transistors, power hybrid circuits, rfpower devices, thyristors, rectifiers, and diacs. All listings includereferences to volume number and page number in the 1974 7-volume DAT ABOO K series described on the facing page.

Trade Mark(s) Registered@Marca(s) Registrada(sl

Copyright 1973 by RCA Corporation

(All rights reserved under Pan-American Copyright Convention)

Information furnished by RCA is believed to be accurate and reliable. However, noresponsibility is assumed by RCA for its use; nor for any infringements of patents or otherrights of third parties which may result from its use. No license is granted by implication orotherwise under any patent or patent rights of RCA.

RCA Solid State IBox 3200 ISomerville, N. J., U.S.A. OB876

RCA Limited ISunbury-on-Thames IMiddlesex TW16 7HW, EnglandRCA s.a. 14400 Herstal I Liege, Belgium

ReA Solid StateTotal Data Service System

The RCA Solid State DATABOOKS are supplementedthroughout the year by a comprehensive data service systemthat keeps you aware of all new device announcements andlets you obtain as much or as little product information asyou need - when you need it.

New solid-state devices and related publications announcedduring the year are described in a monthly newsletter en-titled "What's New in Solid State". If you obtained yourDAT ABOOK(s) directly from RCA, your name is already onthe mailing list for this newsletter. If you obtained yourbook(s) from a source other than RCA and wish to receivethe newsletter, please fill out the form on page 4, detach it,and mail it to RCA.

Each newsletter issue contains a "bingo"-type fast-responseform for your use in requesting information on new devicesof interest to you. If you wish to receive all new product in-formation published throughout the year, without having touse the newsletter response form, you may subscribe to amailing service which will bring you all new data sheets andapplication notes in a package every other month. You canalso obtain a binder for easy filing of all your supplementarymaterial. Provisions for obtaining information on the updatemailing service and the binder are included in the orderform on page 4.

Because we are interested in your reaction to this approachto data service, we invite you to add your comments to theform when you return it, or to send your remarks to one ofthe addresses listed at the top of the form. We solicit yourconstructive criticism to help us improve our service to you.

Order Form for "What's New in Solid State"and for further information on Update Mailings and Binders

Pleasefill out just one copy of this form, and mail it to:

(a) from U.S.A. and Canada:

RCA Solid State DivisionBox 3200Somerville, N. J., U.S.A. 08876

(b) from Latin America and Far East:

RCA Solid StateInternational SalesSomerville, N. J., U.S.A. 08876

(c) from United Kingdom, Europe, Middle East, and Africa:

RCA Limited RCA s.a.Sunbury-an-Thames or 4400 HerstalMiddlesex TW16 7HW, England Liege, Belgium

o Pleasesend me details on obtaining update mailings for my DATABOOKSand a binder for filing of supplementary material.

ITIJ

HomeBusiness ITIIIIIIJ

(State or Prov.)

OIIIJProduct Interest:(I ndicate order of interest ifmore than one is marked)

AD Linear IC's

BOOtQital IC's, COS/MOScD Digital IC's, Bipolar

DO Thvr1storsl Rectifiers

ED Liquid Crvstals

F DSemiconductor DiodesGO A F Power Semiconductors

HDMOSFETS

I oPower Transistors

J oPower Hvbrid Circuits

AD El(ecutlve/AdmlOlstratlonB 0 Purchasing/ProcurementC 0 Research/DevelopmentDo Design EngineerE 0 Application/Components

Engineer

F 0 Productlon/ManufacturmgGo Documentation/LibraryH 0 Rellability/OAI 0 EducationfTralningJ 0 Program/Project ManagementK 0 Marketing

A 0 BroadcastB 0 CommunIcatIonC 0 Instrumentation/ControlD 0 Computer/Data ProcessingE 0 Computer. PeripheralF 0 AutomotIveG LJ IndustrialH 0 MedicalI 0 ResearchJ 0 TransportatIonK 0 Consumer, ElectronicL 0 Consumer, ApplianceM 0 SpaceNo Ordnance00 AVIonicsP 0 ElectronIC Warfare

Page

New RCA Type-Numbering System . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 6

Index to Thyristors, Rectifiers, and Diacs 8

Cross-Reference of Old to New Type Numbers 11

Index to Application Notes 13

Triac Product Matrix 14

SCR Product Matrix 18

Rectifier Product Matrix 22

Application Information 25

Technical Data:Triacs 27Silicon Controlled Rectifiers (SCR's) 137Rectifiers 251Diacs 349

Application Notes 353

Guide to RCA Solid State Devices:Developmental-to-Commercial-Number Cross-Reference Index 504Military (JAN and JAN-TX) Types 510Subject Index 511Index to Devices 526

A new system of type numbers has been adopted for all RCA triacs, SCR's, rectifiers, and diacs previously identified by100-,40000-,41000-,43000-,44000-, and 45000-series numbers. Type numbers for JEDEC (IN- and 2N-series) devices,which are registered with the Joint Electron Devices Engineering Council of the Electronic Industries Association (EIA), are

not affected.

The new type numbers for non-JEDEC RCA thyristors, rectifiers, and diacs consist of an alpha-numeric code thatimmediately identifies the basic type of device and provides information on significant device features. The basic producttype is indicated by the initial letter of the type-number designation; i.e., T = triac, S = SCR, and 0 = rectifier or diac. Thenumbers following the initial letter indicate device current ratings, type of package, and electrical variants within a series.The suffix letter(s) define the voltage rating of the device.

Sixteen suffix letters are used to represent specific voltage ratings in the range from 15 to 1000 volts. Combinations of theseletters can be used to indicate voltage ratings that differ from the sixteen basic values. (For example, the suffix OF is usedfor a voltage rating of 450 volts; i.e., 0 + F = 400 + 50 = 450 volts.)

The charts and matrix shown below provide a detailed explanation of the new type number codes. For convenience of typeselection, the "old" numbers are included in the index to devices on pages 8-10, and a cross-reference guide that relates"old" type numbers to the new numbers that replace them is provided on pages 11-12.

Graphic Representation of Rectifier andDiac Numbering System~IQJJ~J,0,Indicates Indicates IndicatesRectifier Package Averageor Diac 1 = 00-1 Current

2 = 00-15 Rating 10

Indicates Type 3 = TO-l (00 indicates1 = Standard 4 = 00-4 'a < 1 A)2 ~ Fast 5 = 00-5

Recovery 6 = 00-263 ~ Diac 7 = 00-26 Insulated

VoltageDesignationQ = 15 VU = 25 VY = 30 VF = 50 VA = 100 VG = 150 VB ~ 200 VH = 250 VC = 300 V0= 400 VE = 500 VM ~ 600 VS = 700 VN = 800 VT = 900 VP = 1000 VPA=1100VP8 = 1200 V

Thyristor Numbering MatrixTRIACS

Generic ClassT23 : 2.5A sensitive-gate types

Package Variants0: TO-51 : TO-5 with radiator

0: Mod. TO-51 : TO-5 with radiator2 : TO-5 with heat spreader

0: TO-661 : TO-66 with radiator


Graphic Representation of ThyristorNumbering System

~IdentifiesPackageVariants

Id~eslElectricalVariants

VoltageDesignation(as shownat left)

qJ .c~J,0,Indicates IndicatesType Broad GenericT = Triac ClassificationS = SCR on basis of

IT( RMS) Rating

__ 1_-IT(RMS) Standard Fast-TurnoffRatings (A) Devices Devices

0-2.5 00 - 09 10 - 192.5 - 8 20 - 29 30 - 39

8 - 15 40 - 49 50 - 5915 - 40 60 - 69 70 - 79>40 80 - 89 90 - 99

(NOTE: The first five digits, e.g., T2300, provide thebasic device series designation_)

Electrical Variants

0: IGT = 3 mA1 : IGT = 4 mA3: IGT = 25 mA4: IGT = 10 mA; 400-Hz type5: IGT ~ 25 mA; 400-Hz type6: IGT = 25 mA; zero-voltage-switch type

0: IGT = 25 mA1 IGT = 50 mA; 1+ and 111- modes4 : IGT = 4.25 mA; 400-Hz type6 : zero-voltage-switch type

Thyristor Numbering MatrixTRIACS (cont'd)

Package Variants

o : press fit1 : stud2 : iso lated stud

0: VERSAWATT5: ISOWATT

0: IT(RMS) = 15 A1 : IT(RMS) = 10 A4: IT(RMS) = 15 A; 400-Hz type5: IT(RMS) = 10 A; 400-Hz type6: IT(RMS) = 15 A; zero-voltage-switch type7 : IT(RMS) = 10 A; zero-voltage-switch type

0: IGT = 25 mA1 : IGT = BO mA; 1+ and 111- modes6 : zero-voltage-switch type

0: IGT = 25 mA1 : IGT = BO mA; 1+ and 111- modes6 : zero-voltage-switch type

o : press-fit1 : stud2 : iso lated stud

o : press-fit, flexible leads1 : stud, flexible leads2 : isolated stud, flexible leads3 : press-fit4 : stud5 : isolated stud

0: IT(RMS) = 40 A1 : IT(RMS) = 30 A4: IT(RMS) = 40 A; 400-Hz type5: IT(RMS) = 25 A; 400-Hz type6: IT(RMSI = 40 A; zero-voltage-switch type7: IT(RMS) = 30 A; zero-voltage-switch type

o : IT(RMS) = BO A1 : IT(RMS) = 60 A

SCA'sGeneric ClassS20 : 4-A plastic types

Package Variants6: VERSAWATT

Electrical Variantso : IGT = 0_2 mA1 : IGT = 0_5 mA2 : IGT = 2_0 mA

S22 : 2-A types

S24 : 4_5-A types

S26 : 7-A types

0: TO-B

0: TO-B

o : low-profile TO-51 : modified TO-5 with radiator2 : modified TO-5 with heat spreader


S3B: ITR's

S40 : 12_5-A types

0: TO-66

0: TO-3

0: IGT = 40 mA; VGT = 4 V1 : IGT = 35 mA2: IGT = 45 mA3: VGT = 2 V4: VGT = 3_5 V5: IGT = 30 mA; V(SO) = 500 V6: IGT = 30 mA; V(SO) = 400 V

o . IT(RMS) = 20 A1 : IT(RMS) = 10 A

S62 . 1O-A and 20-A types 0 : press-fit1 : stud2 : isolated stud

S64 : 16-A, 25-A, and 35-A types 0: press-fit1 : stud2 : isolated stud

S74 : 35-A fast-turn-off types 3 : TO-4B

0: IT(RMS) = 35 A1 : IT(RMS) = 25 A2: IT(RMS) = 16 A

Index to Thyristors, Rectifiers and Diacs

RCA Former Data Sheet Page Type of Current Voltage RCA Former Data Sheet Page Type of Current VoltageType No. Type No.- File No. No. Device (AI (V) Type No. Type No.- File No. No. Device (A) (VI

lN248C 6 287 Rectifier 20 50 lN3910 729 342 Rectifier 30 100lN249C 6 287 Rectifier 20 100 1N3911 729 342 Rectifier 30 200lN250C 6 287 Rectifier 20 200 lN3912 729 342 Rectifier 30 3001N440B 5 252 Rectifier 0.75 100 1N3913 729 342 Rectifier 30 400lN441B 5 252 Rectifier 0.75 200 lN5211 245 270 Rectifier 1 200

lN442B 5 252 Rectifier 0.75 300 lN5212 245 270 Rectifier 1 400lN443B 5 252 Rectifier 0.75 400 lN5213 245 270 Rectifier 1 600lN444B 5 252 Rectifier 0.75 500 lN5214 245 270 Rectifier 0.75 800lN445B 5 252 Rectifier 0.75 600 lN5215 245 270 Rectifier 1 200lN536 3 255 Rectifier 0.75 50 lN5216 245 270 Rectifier 1 400

lN537 3 255 Rectifier 0.75 100 lN5217 245 270 Rectifier 1 600lN538 3 255 Rectifier 0.75 200 lN5218 245 270 Rectifier 0.75 800lN539 3 255 Rectifier 0.75 300 lN5391 478 273 Rectifier 1.5 50lN540 3 255 Rectifier 0.75 400 lN5392 478 273 Rectifier 1.5 100lN547 3 255 Rectifier 0.75 600 lN5393 478 273 Rectifier 1.5 200

lNl095 3 255 Rectifier 0.75 500 lN5394 478 273 Rectifier 1.5 300lN1183A 38 291 Rectifier 40 50 lN5395 478 273 Rectifier 1.5 400lN1184A 38 291 Rectifier 40 100 lN5396 478 273 Rectifier 1.5 500lNl186A 38 291 Rectifier 40 200 lN5397 478 273 Rectifier 1.5 6001N1187A 38 291 Rectifier 40 300 lN5398 478 273 Rectifier 1.5 800

lNl188A 38 291 Rectifier 40 400 lN5399 478 273 Rectifier 1.5 10001Nl189A 38 291 Rectifier 40 500 2N681 96 225 SCR 25 25lNl190A 38 291 Rectifier 40 600 2N682 96 225 SCR 25 50lNl195A 6 287 Rectifier 20 300 2N683 96 225 SCR 25 100lN1196A 6 287 Rectifier 20 400 2N684 96 225 SCR 25 150

lN1197A 6 287 Rectifier 20 500 2N685 96 225 SCR 25 2001N1198A 6 287 Rectifier 20 600 2N686 96 225 SCR 25 250lN1199A 20 283 Rectifier 12 50 2N687 96 225 SCR 25 300lN1200A 20 283 Rectifier 12 100 2N688 96 225 SCR 25 400lN1202A 20 283 Rectifier 12 200 2N689 96 225 SCR 25 500

lN1203A 20 283 Rectifier 12 300 2N690 96 225 SCR 25 600lN1204A 20 283 Rectifier 12 400 2N1842A 28 234 SCR 16 25lN1205A 20 283 Rectifier 12 500 2N1843A 28 234 SCR 16 50lN1206A 20 283 Rectifier 12 600 2N1844A 28 234 SCR 16 100lN1341B 58 281 Rectifier 6 50 2N1845A 28 234 SCR 16 150

lN1342B 58 281 Rectifier 6 100 2N1846A 28 234 SCR 16 200lN1344B 58 281 Rectifier 6 200 2N1847A 28 234 SCR 16 250lN1345B 58 281 Rectifier 6 300 2N1848A 28 234 SCR 16 300lN1346B 58 281 Rectifier 6 400 2N1849A 28 234 SCR 16 400lN1347B 58 281 Rectifier 6 500 2N1850A 28 234 SCR 16 500

lN1348B 58 281 Rectifier 6 600 2N3228 114 144 SCR 5 200lN1763A 89 258 Rectifier 1 400 2N3525 114 144 SCR 5 400lN1764A 89 258 Rectifier 1 500 2N3528 114 144 SCR 2 200lN2858A 91 265 Rectifier 1 50 2N3529 114 144 SCR 2 400lN2859A 91 265 Rectifier 1 100 2N3650 408 238 SCR 35 100

lN2860A 91 265 Rectifier 1 200 2N3651 408 238 SCR 35 200lN2861A 91 265 Rectifier 1 300 2N3652 408 238 SCR 35 300lN2862A 91 265 Rectifier 1 400 2N3653 408 238 SCR 35 400lN2863A 91 265 Rectifier 1 500 2N3654 724 245 SCR 35 50lN2864A 91 265 Rectifier 1 600 2N3655 724 245 SCR 35 100

lN3193 41 294 Rectifier 0.75 200 2N3656 724 245 SCR 35 200lN3194 41 294 Rectifier 0.75 400 2N3657 724 245 SCR 35 300lN3195 41 294 Rectifier 0.75 600 2N3658 724 245 SCR 35 400lN3196 41 294 Rectifier 0.5 800 2N3668 116 203 SCR 12.5 100lN3253 41 294 Rectifier 0.75 200 2N3669 116 203 SCR 12.5 200

1N3254 41 294 Rectifier 0.75 400 2N3670 116 203 SCR 12.5 400lN3255 41 294 Rectifier 0.75 600 2N3870 578 218 SCR 35 1001N3256 41 294 Rectifier 0.5 800 2N3871 578 218 SCR 35 200lN3563 41 294 Rectifier 0.4 1000 2N3872 578 218 SCR 35 400lN3879 726 323 Rectifier 6 50 2N3873 578 218 SCR 35 600

lN3880 726 323 Rectifier 6 100 2N3896 578 218 SCR 35 100lN3881 726 323 Rectifier 6 200 2N3897 578 218 SCR 35 200lN3882 726 323 Rectifier 6 300 2N3898 578 218 SCR 35 400lN3883 726 323 Rectifier 6 400 2N3899 578 218 SCR 35 600lN3889 727 331 Rectifier 12 50 2N4101 114 144 SCR 5 600

lN3890 727 331 Rectifier 12 100 2N4102 114 144 SCR 2 600lN3891 727 331 Rectifier 12 200 2N4103 116 203 SCR 12.5 6001N3892 727 331 Rectifier 12 300 2N5441 593 55 Triac 40 200lN3893 727 331 Rectifier 12 400 2N5442 593 55 Triac 40 400lN3899 728 339 Rectifier 20 50 2N5443 593 55 Triac 40 600

lN3900 728 339 Rectifier 20 100 2N5444 593 55 Triac 40 200lN3901 728 339 Rectifier 20 200 2N5445 593 55 Triac 40 4001N3902 728 339 Rectifier 20 300 2N5446 593 55 Triac 40 6001N3903 728 339 Rectifier 20 400 2N5567 457 92 Triac 10 2001N3909 729 342 Rectifier 30 50 2N5568 457 92 Triac 10 400

• Applies to RCA 100,40000,41000,43000,44000, and 45000 Series ~umbers.

8

Index to Thyristors, Rectifiers and Diacs (cont'd)

RCA Former Data Sheet Page Type of Current Voltage RCA Former Data Sheet Page Type of Current VoltageType No. Type No.- File No. No. Device (A) (V) Type No. Type No.- File No. No. Device IA) (V)

2N5569 457 92 Triac 10 200 S2061M 107M 654 138 SCR 4 6002N5570 457 92 Triac 10 400 S20610 1070 654 138 SCR 4 152N5571 458 85 Triac 15 200 S2061Y 107Y 654 138 SCR 4 302N5572 458 85 Triac 15 400 S2062A 108A 654 138 SCR 4 1002N5573 458 85 Triac 15 200 S20628 1088 654 138 SCR 4 200

2N5574 458 85 Triac 15 400 S2062C 108C 654 138 SCR 4 3002N5754 414 28 Triac 2.5 100 S20620 1080 654 138 SCR 4 4002N5755 414 28 Triac 2.5 200 S2062E 108E 654 138 SCR 4 5002N5756 414 28 Triac 2.5 400 S2062F 108F 654 138 SCR 4 502N5757 414 28 Triac 2.5 600 S2062M 108M 654 138 SCR 4 600

01201A 44002 495 271 Rectifier 1 100 S20620 1080 654 138 SCR 4 15012018 44003 495 271 Rectifier 1 200 S2062Y 108Y 654 138 SCR 4 30012010 44004 495 271 Rectifier 1 400 S2400A 40942 567 151 SCR 4.5 10001201F 44001 495 277 Rectifier 1 50 S24008 40493 567 151 SCR 4.5 20001201M 44005 495 277 Rectifier 1 600 S24000 40944 567 151 SCR 4.5 400

01201N 44006 495 271 Rectifier 1 800 S2400M 40945 567 151 SCR 4.5 60001201P 44007 495 271 Rectifier 1 1000 S26008 40654 496 156 SCR 7 20002101S 40892 522 298 Rectifier 1 700 S26000 40655 496 156 SCR 7 40002103S 40891 522 298 Rectifier 3 700 S2600M 40833 496 156 SCR 7 60002103SF 40890 522 298 Rectifier 3 750 S26108 40658 496 156 SCR 3.3 200

02201 A 44934 629 313 Rectifier 1 100 S26100 40659 496 156 SCR 3.3 400022018 44935 629 313 Rectifier 1 200 S2610M 40835 496 156 SCR 3.3 600022010 44936 629 313 Rectifier 1 400 S26208 40656 496 156 SCR 7 20002201F 44933 629 313 Rectifier 1 50 S26200 40657 496 156 SCR 7 40002201M 44937 629 313 Rectifier 1 600 S2620M 40834 496 156 SCR 7 600

02201N 44938 629 313 Rectifier 1 800 S27108 40504 266 164 SCR 1.7 20002406A 43880 663 318 Rectifier 6 100 S27100 40505 266 164 SCR 1.7 400024068 43881 663 318 Rectifier 6 200 S2710M 40506 266 164 SCR 1.7 60002406C 43882 663 318 Rectifier 6 300 S2800A 40867 501 166 SCR 8 100024060 43883 663 318 Rectifier 6 400 S28008 40868 501 166 SCR 8 200

02406F 43879 663 318 Rectifier 6 50 S28000 40869 501 166 SCR 8 40002406M 43884 663 318 Rectifier 6 600 S37008 40553 306 172 SCR 5 20002412A 43890 884 326 Rectifier 12 100 S37000 40554 306 172 SCR 5 400024128 43891 664 326 Rectifier 12 200 S3700M 40555 306 172 SCR 5 60002412C 43892 664 326 Rectifier 12 300 S3701M 40768 476 192 SCR 5 600

024120 43893 884 326 Rectifier 12 400 S3702SF 40889 522 194 SCR 5 75002412F 43889 664 326 Rectifier 12 50 S3703SF 40888 522 194 SCR 5 75002412M 43894 664 326 Rectifier 12 600 S3704A 690 180 SCR 5 10002520A 43900 665 334 Rectifier 20 100 S37048 690 180 SCR 5 200025208 43901 665 334 Rectifier 20 200 S37040 690 180 SCR 5 400

02520C 43902 665 334 Rectifier 20 300 S3704M 690 180 SCR 5 600025200 43903 665 334 Rectifier 20 400 S3704S 690 180 SCR 5 70002520F 43899 665 334 Rectifier 20 50 S3705M 40640 354 187 SCR 5 60002520M 43904 665 334 Rectifier 20 600 S3706M 40641 354 187 SCR 5 60002540A 40957 580 345 Rectifier 40 100 S3714A 690 180 SCR 5 100

025408 40958 580 345 Rectifier 40 200 S37148 690 180 SCR 5 200025400 40959 580 345 Rectifier 40 400 S37140 690 180 SCR 5 40002540F 40956 580 345 Rectifier 40 50 S3714M 690 180 SCR 5 60002540M 40960 580 345 Rectifier 40 600 S3714S 690 180 SCR 5 70002600EF 40644 354 303 Rectifier 1 550 S38000 41023 639 199 ITR* 5 400

02601A 723 308 Rectifier 1 100 S3800E 41019 639 199 ITR* 5 500026018 TA7892 723 308 Rectifier 1 200 S3800EF 41022 639 199 ITR* 5 550026010 TA7893 723 308 Rectifier 1 400 S3800M 41021 639 199 ITR* 5 600026010F 40643 354 303 Rectifier 1 450 S3800MF 41018 639 199 ITR* 5 650

02601EF 40642 354 303 Rectifier 1 550 S3800S 41020 639 199 ITR* 5 700

02601F 723 308 Rectifier 1 50 S3800SF 41017 639 199 ITR* 5 75002601M TA7894 723 308 Rectifier 1 600 S6200A 40749 418 210 SCR 20 10002601N TA7895 723 308 Rectifier 1 800 S62008 40750 418 210 SCR 20 20003202U 45412 577 350 Diac 2 pk 25-40 S62000 40751 418 210 SCR 20 40003202Y 45411 577 350 Diac 2 pk 29·35 S6200M 40752 418 210 SCR 20 600

S2060A 106A 654 138 SCR 4 100 S6210A 40753 418 210 SCR 20 100S20608 1068 654 138 SCR 4 200 S62108 40754 418 210 SCR 20 200S2060C 106C 654 138 SCR 4 300 S62100 40755 418 210 SCR 20 400S20600 1060 654 138 SCR 4 400 S6210M 40756 418 210 SCR 20 600S2060E 106E 654 138 SCR 4 500 S6220A 40757 418 210 SCR 20 100

S2060F 106F 654 138 SCR 4 50 S62208 40758 418 210 SCR 20 200S2060M 106M 654 138 SCR 4 600 S62200 40759 418 210 SCR 20 400S20600 1060 654 138 SCR 4 15 S6220M 40760 418 210 SCR 20 600S2060Y 106Y 654 138 SCR 4 30 S0400N 40937 578 218 SCR 35 800S2061A 107A 654 138 SCR 4 100 S6410N 40938 578 218 SCR 35 800

S20618 1078 654 138 SCR 4 200 S6420A 40680 578 218 SCR 35 100S2061C 107C 654 138 SCR 4 300 S64208 40681 578 218 SCR 35 200S20610 1070 654 138 SCR 4 400 S64200 40682 578 218 SCR 35 400S2061E 107E 654 138 SCR 4 500 S6420M 40683 578 218 SCR 35 600S2061F 107F 654 138 SCR 4 50 S6420N 40952 578 218 SCR 35 800

"Applies to RCA 100,4000.41000,43000,44000, and 45000, Series numbers. -Integrated thyristor and rectifier.

9

S6431M 4U,lb LA! LZl:S ::;CH "" bUU jq.t IOU £tU/IQ 'IUb 'II I f1ac '" 'IUU

S7430M 40735 408 238 SCR 35 600 T4117B 40719 406 47 Triac 10 200S7432M 724 245 SCR 35 600 T4117D 40720 406 47 Triac 10 400T2300A 40525 470 33 Triac 2.5 100 T4120B 40802 458 85 Triac 15 200T2300B 40526 470 33 Triac 2.5 200 T4120D 40803 458 85 Triac 15 400

T2300D 40527 470 33 Triac 2.5 400 T4120M 40804 458 85 Triac 15 600T2301A 40766 431 40 Triac 2.5 100 T4121B 40799 457 92 Triac 10 200T2301B 40691 431 40 Triac 2.5 200 T4121D 40800 457 92 Triac 10 400T2301D 40692 431 40 Triac 2.5 400 T4121M 40801 457 92 Triac 10 600T2302A 40528 470 33 Triac 2.5 100 T4706B 40715 406 47 Triac 15 200

T2302B 40529 470 33 Triac 2.5 200 T4706D 40716 406 47 Triac 15 400T2302D 40530 470 33 Triac 2.5 400 T6400N 40925 593 55 Triac 40 800T2304B 40769 441 41 Triac 0.5 200 T6401B 40660 459 107 Triac 30 200T2304D 40770 441 41 Triac 0.5 400 T6401D 40661 459 107 Triac 30 400T2305B 40771 441 41 Triac 0.5 200 T6401M 40671 459 107 Triac 30 600

T2305D 40772 441 41 Triac 0.5 400 T6404B 40791 487 114 Triac 40 200T2306A 40696 406 47 Triac 2.5 100 T6404D 40792 487 114 Triac 40 400T2306B 40697 406 47 Triac 2.5 200 T6405B 407B7 487 114 Triac 25 200T2306D 40698 406 47 Triac 2.5 400 T6405D 40788 487 114 Triac 25 400T2310A 40531 470 33 Triac 1.6 470 T6406B 40699 406 47 Triac 40 200

T2310B 40532 470 33 Triac 1.6 200 T6406D 40700 406 47 Triac 40 400T2310D 40533 470 33 Triac 1.6 400 T6406M 40701 406 47 Triac 40 600T2311A 40767 431 40 Triac 1.6 100 T6407B 40705 406 47 Triac 30 200T2311B 40761 431 40 Triac 1.6 200 T6407D 40706 406 47 Triac 30 400T2311D 40762 431 40 Triac 1.6 400 T6407M 40709 406 47 Triac 30 600

T2312A 40534 470 33 Triac 1.9 100 T6410N 40926 593 55 Triac 40 800T2312B 40535 470 33 Triac 1.9 200 T6411B 40662 459 107 Triac 30 200T2312D 40536 470 33 Triac 1.9 400 T6411D 40663 459 107 Triac 30 400T2313A 40684 414 2B Triac 1.9 100 T6411M 40672 459 107 Triac 30 600T2313B 40685 414 2B Triac 1.9 200 T6414B 40793 487 114 Triac 40 200

T2313D 40686 414 28 Triac 1.9 400 T6414D 40794 487 114 Triac 40 400T2313M 40687 414 28 Triac 1.9 600 T6415B 40789 487 114 Triac 25 200T2316A 40693 406 47 Triac 2.5 100 T6415D 40790 487 114 Triac 25 400T2316B 40694 406 47 Triac 2.5 200 T6416B 40702 406 47 Triac 40 200T2316D 40695 406 47 Triac 2.5 400 T6416D 40703 406 47 Triac 40 400

T2500B 41014 615 49 Triac 6 200 T6416M 40704 406 47 Triac 40 600T2500D 41015 615 49 Triac 6 400 T6417B 40707 406 47 Triac 30 200T2700B 40429 351 62 Triac 6 200 T6417D 40708 406 47 Triac 30 400T2700D 40430 351 62 Triac 6 400 T6417M 40710 406 47 Triac 30 600T2706B 40727 406 47 Triac 6 200 T6420B 40688 593 55 Triac 40 200T2706D 40728 406 47 Triac 6 400 T6420D 40689 593 55 Triac 40 400T2710B 40502 351 62 Triac 3.3 200 T6420M 40690 593 55 Triac 40 600T2710D 40503 351 62 Triac 3.3 400 T6420N 40927 593 55 Triac 40 800T2716B 40729 406 47 Triac 3.3 200 T6421B 40805 459 107 Triac 30 200T2716D 40730 406 47 Triac 3.3 400 T6421D 40806 459 107 Triac 30 400T2800B 40668 364 69 Triac 8 200 T6421M 40807 459 107 Triac 30 600T2800D 40669 364 69 Triac 8 400 T8401B 41029 725 122 Triac 60 200T2800M 40670 364 69 Triac 8 600 T8401D 41030 725 122 Triac 60 400T2801DF 40842 493 75 Triac 6 450 T8401M 41031 725 122 Triac 60 600T2806B 40721 406 47 Triac 8 200 T8411B 41032 725 122 Triac 60 200T2806D 40722 406 47 Triac 8 400 T8411D 41033 725 122 Triac 60 400T2850A 40900 540 79 Triac 8 100 T8411M 41034 725 122 Triac 60 600T2850B 40901 540 79 Triac 8 200 T8421B 41035 725 122 Triac 60 200T2850D 40902 540 79 Triac 8 400 T8421D 41036 725 122 Triac 60 400T4100M 40797 458 85 Triac 15 600 T8421M 41037 725 122 Triac 60 600T4101M 40795 457 92 Triac 10 600 T8430B 40916 549 130 Triac 80 200T4103B 40783 443 99 Triac 15 200 T8430D 40917 549 130 Triac 80 400T4103D 40784 443 99 Triac 15 400 T8430M 40918 549 130 Triac 80 600T4104B 40779 443 99 Triac 10 200 T8440B 40919 549 130 Triac 80 200T4104D 40780 443 99 Triac 10 400 T8440D 40920 549 130 Triac 80 400T4105B 40775 443 99 Triac 6 200 T8440M 40921 549 130 Triac 80 600T4105D 40776 443 99 Triac 6 400 T8450B 40922 549 130 Triac 80 200T4106B 40711 406 47 Triac 15 200 T8450D 40923 549 130 Triac 80 400T4106D 40712 406 47 Triac 15 400 T8450M 40924 549 130 Triac 80 600T4107B 40717 406 47 Triac 10 200

T4107D 40718 406 47 Triac 10 400T4110M 40798 458 85 Triac 15 600T4111M 40796 457 92 Triac 10 600T4113B 40785 443 99 Triac 15 200T4113D 40786 443 99 Triac 15 400

T4114B 40781 443 99 Triac 10 200T4114D 40782 443 99 Triac 10 400T4115B 40777 443 99 Triac 6 200T4115D 40778 443 99 Triac 6 400T4116B 40713 406 47 Triac 15 200·Applies to RCA 100, 40000, 41000, 43000, 44000, and 45000 Series numbers.

10

RCA Thyristors/Rectifiers Type-Number Cross-Reference Guide(Old numbers to NEW numbers)

NEW DataSheet Page Type of Former RCA NEW DataSheet Page Type of Current VoltageFormer RCA RCA Current Voltage RCAType No. Type No. FileNo. No. Device (A) (V) Type No. Type No. File No. No. Device (AI (V)

RCA106A S2060A 654 138 SCR 4 100 40680 S6420A 578 218 SCR 35 100RCA106B S2060B 654 138 SCR 4 200 40681 S6420B 578 218 SCR 35 200RCA106C S2060C 654 138 SCR 4 300 40682 S64200 578 218 SCR 35 400RCA1060 S20600 654 138 SCR 4 400 40683 S6420M 578 218 SCR 35 600RCA106E S2060E 654 138 SCR 4 500 40684 T2313A 414 28 Triac 1.9 100RCA106F S2060F 654 138 SCR 4 50 40685 T2313B 414 28 Triac 1.9 200RCA1060 S20600 654 138 SCR 4 15 40686 T23130 414 28 Triac 1.9 400RCA106M S2060M 654 138 SCR 4 600 40687 T2313M 414 28 Triac 1.9 600RCA106Y S2060Y 654 138 SCR 4 30 40688 T6420B 593 55 Triac 40 200RCA107A S2061A 654 138 SCR 4 100 40689 T64200 593 55 Triac 40 400RCA107B S2061B 654 138 SCR 4 200 40690 T6420M 593 55 Triac 40 600RCA107C S2061C 654 138 SCR 4 300 40691 T2301B 431 40 Triac 2.5 200RCA1070 S20610 654 138 SCR 4 400 40692 T23010 431 40 Triac 2.5 400RCA107E S2061E 654 138 SCR 4 500 40693 T2316A 406 47 Triac 2.5 100RCA107F S2061F 654 138 SCR 4 50 40694 T2316B 406 47 Triac 2.5 200RCA1070 S20610 654 138 SCR 4 15 40695 T23160 406 47 Triac 2.5 400RCA107M S2061M 654 138 SCR 4 600 40696 T2306A 406 47 Triac 2.5 100RCA 107Y S2061Y 654 138 SCR 4 30 40697 T2306B 406 47 Triac 2.5 200RCA108A S2062A 654 138 SCR 4 100 40698 T23060 406 47 Triac 2.5 400RCA 108B S2062B 654 138 SCR 4 200 40699 T6406B 406 47 Triac 40 200RCA108C S2062C 654 138 SCR 4 300 40700 T64060 406 47 Triac 40 400RCA1080 S20620 654 138 SCR 4 400 40701 T6406M 406 47 Triac 40 600RCA108E S2062E 654 138 SCR 4 500 40702 T6416B 406 47 Triac 40 200RCA108F S2062F 654 138 SCR 4 50 40703 T64160 406 47 Triac 40 400RCA1080 S20620 654 138 SCR 4 15 40704 T6416M 406 47 Triac 40 600RCA108M S2062M 654 138 SCR 4 600 40705 T6407B 406 47 Triac 30 200RCA108Y S2062Y 654 138 SCR 4 30 40706 T64070 406 47 Triac 30 40040216 S6431M 247 228 SCR 35 600 40707 T6417B 406 47 Triac 30 20040429 T2700B 351 62 Triac 6 200 40708 T64170 406 47 Triac 30 40040430 T27000 351 62 Triac 6 400 40709 T6407M 406 47 Triac 30 60040502 T2710B 351 62 Triac 3.3 200 40710 T6417M 406 47 Triac 30 60040503 T27100 351 62 Triac 3.3 400 40711 T4106B 406 47 Triac 15 20040504 S2710B 266 164 SCR 1.7 200 40712 T41060 406 47 Triac 15 40040505 S27100 266 164 SCR 1.7 400 40713 T4116B 406 47 Triac 15 20040506 S2710M 266 164 SCR 1.7 600 40714 T41160 406 47 Triac 15 40040525 T2300A 470 33 Triac 2.5 100 40715 T4706B 406 47 Triac 15 20040526 T2300B 470 33 Triac 2.5 200 40716 T47060 406 47 Triac 15 40040527 T23000 470 33 Triac 2.5 400 40717 T4107B 406 47 Triac 10 20040528 T2302A 470 33 Triac 2.5 100 40718 T41070 406 47 Triac 10 40040529 T2302B 470 33 Triac 2.5 200 40719 T4117B 406 47 Triac 10 20040530 T23020 470 33 Triac 2.5 400 40720 T41170 406 47 Triac 10 40040531 T2310A 470 33 Triac 1.6 100 40721 T2806B 406 47 Triac 8 20040532 T2310B 470 33 Triac 1.6 200 40722 T28060 406 47 Triac 8 40040533 T23100 470 33 Triac 1.6 400 40727 T2706B 406 47 Triac 6 20040534 T2312A 470 33 Triac 1.9 100 40728 T27060 406 47 Triac 6 40040535 T2312B 470 33 Triac 1.9 200 40729 T2716B 406 47 Triac 3.3 20040536 T23120 470 33 Triac 1.9 400 40730 T27160 406 47 Triac 3.3 40040553 S3700B 306 172 SCR 5 200 40735 S7430M 408 238 SCR 35 60040554 S37000 306 172 SCR 5 400 40749 S6200A 418 210 SCR 20 10040555 S3700M 306 172 SCR 5 600 40750 S6200B 418 210 SCR 20 20040640 S3705M 354 187 SCR 5 600 40751 S62000 418 210 SCR 20 40040641 S3706M 354 187 SCR 5 600 40752 S6200M 418 210 SCR 20 60040642 02601 EF 354 303 Rectifier 1 550 40753 S6210A 418 210 SCR 20 10040643 026010F 354 303 Rectifier 1 450 40754 S6210B 418 210 SCR 20 20040644 02600EF 354 303 Rectifier 1 550 40755 S62100 418 210 SCR 20 40040654 S2600B 496 156 SCR 7 200 40756 S6210M 418 210 SCR 20 60040655 S26000 496 156 SCR 7 400 40757 S6220A 418 210 SCR 20 10040656 S2620B 496 156 SCR 7 200 40758 S6220B 418 210 SCR 20 20040657 S26200 496 156 SCR 7 400 40759 S62200 418 210 SCR 20 40040658 S2610B 496 156 SCR 3.3 200 40760 S6220M 418 210 SCR 20 60040659 S26100 496 156 SCR 3.3 400 40761 T2311B 431 40 Triac 1.6 20040660 T6401B 459 107 Triac 30 200 40762 T23110 431 40 Triac 1.6 40040661 T6401D 459 107 Triac 30 400 40766 T2301A 431 40 Triac 2.5 10040662 T6411B 459 107 Triac 30 200 40767 T2311A 431 40 Triac 1.6 10040663 T6411D 459 107 Triac 30 400 40768 S3701M 476 192 SCR 5 60040668 T2800B 364 69 Triac 8 200 40769 T2304B 441 41 Triac 0.5 20040669 T28oo0 364 69 Triac 8 400 40770 T23040 441 41 Triac 0.5 40040670 T2800M 364 69 Triac 8 600 40771 T2305B 441 41 Triac 0.5 20040671 T6401M 459 107 Triac 30 600 40772 T23050 441 41 Triac 0.5 40040672 T6411M 459 107 Triac 30 600 40775 T4105B 443 99 Triac 6 200

"

RCA Thyristors/Rectifiers Type-Number Cross-Reference Guide [cont'd](Old numbers to NEW numbers)

Former RCA NEW DataSheet Page Type of Current Voltage Former RCA NEW DataSheet Page Type of CurrentVoltageRCA RCAType No. Type No. FileNo. No. Device (A) (VI Type No. Type No. FileNo. No. Device (AI (VI

40776 T41050 443 99 Triac 6 400 40960 02540M 580 345 Rectifier 40 60040777 T4115B 443 99 Triac 6 200 41014 T2500B 615 49 Triac 6 20040778 T41150 443 99 Triac 6 400 41015 T25000 615 49 Triac 6 40040779 T4104B 443 99 Triac 10 200 41017 538005F 639 199 ITR* 5 75040780 T41040 443 99 Triac 10 400 41018 53800MF 639 199 ITR* 5 65040781 T4114B 443 99 Triac 10 200 41019 53800E 639 199 ITR* 5 50040782 T41140 443 99 Triac 10 400 41020 538005 639 199 ITR* 5 70040783 T4103B 443 99 Triac 15 200 41021 53800M 639 199 ITR* 5 60040784 T41030 443 99 Triac 15 400 41022 53800EF 639 199 ITR* 5 55040785 T4113B 443 99 Triac 15 200 41023 538000 639 199 ITR* 5 40040786 T41130 443 99 Triac 15 400 41029 T8401B 725 122 Triac 60 20040787 T6405B 487 114 Triac 25 200 41030 T84010 725 122 Triac 60 40040788 T64050 487 114 Triac 25 400 41031 T8401M 725 122 Triac 60 60040789 T6415B 487 114 Triac 25 200 41032 T8411B 725 122 Triac 60 20040790 T64150 487 114 Triac 25 400 41033 T84110 725 122 Triac 60 40040791 T6404B 487 114 Triac 40 200 41034 T8411M 725 122 Triac 60 60040792 T64040 487 114 Triac 40 400 41035 T8421B 725 122 Triac 60 20040793 T6414B 487 114 Triac 40 200 41036 T8421 0 725 122 Triac 60 40040794 T64140 487 114 Triac 40 400 41037 T8421M 725 122 Triac 60 60040795 T4101M 457 92 Triac 10 600 43879 02406F 663 318 Rectifier 6 5040796 T4111M 457 92 Triac 10 600 43880 02406A 663 318 Rectifier 6 10040797 T4100M 458 85 Triac 15 600 43881 02406B 663 318 Rectifier 6 20040798 T4110M 458 85 Triac 15 600 43882 02406C 663 318 Rectifier 6 30040799 T4121B 457 92 Triac 10 200 43883 024060 663 318 Rectifier 6 40040800 T41210 457 92 Triac 10 400 43884 02406M 663 318 Rectifier 6 60040801 T4121M 457 92 Triac 10 600 43889 02412F 664 326 Rectifier 12 5040802 T4120B 458 85 Triac 15 200 43890 02412A 664 326 Rectifier 12 10040803 T41200 458 85 Triac 15 400 43891 02412B 664 326 Rectifier 12 20040804 T4120M 458 85 Triac 15 600 43892 02412C 664 326 Rectifier 12 30040805 T6421B 459 107 Triac 30 200 43893 024120 664 326 Rectifier 12 40040806 T6421 0 459 107 Triac 30 400 43894 02412M 664 326 Rectifier 12 60040807 T6421M 459 107 Triac 30 600 43899 02520F 665 334 Rectifier 20 5040833 52600M 496 156 5CR 7 600 43900 02520A 665 334 Rectifier 20 10040834 52620M 496 156 5CR 7 600 43901 02520B 665 334 Rectifier 20 20040835 52610M 496 156 5CR 3.3 600 43902 02520C 665 334 Rectifier 20 30040842 T28010F 493 75 Triac 6 450 43903 025200 665 334 Rectifier 20 40040867 52800A 501 166 5CR 8 100 43904 02520M 665 334 Rectifier 20 60040868 52800B 501 166 5CR 8 200 44001 01201F 495 278 Rectifier 1 5040869 528000 501 166 5CR 8 400 44002 01201A 495 278 Rectifier 1 10040888 537035F 522 194 5CR 5 750 44003 01201B 495 278 Rectifier 1 20040889 537025F 522 194 5CR 5 750 44004 012010 495 278 Rectifier 1 40040890 021035F 522 298 Rectifier 3 750 44005 01201M 495 278 Rectifier 1 60040891 021035 522 298 Rectifier 3 700 44006 01201N 495 278 Rectifier 1 80040892 021015 522 298 Rectifier 1 700 44007 01201P 495 278 Rectifier 1 100040900 T2850A 540 79 Triac 8 100 44933 02201F 629 313 Rectifier 1 5040901 T2850B 540 79 Triac 8 200 44934 02201A 629 313 Rectifier 1 10040902 T28500 540 79 Triac 8 400 44935 02201B 629 313 Rectifier 1 20040916 T8430B 549 130 Triac 80 200 44936 022010 629 313 Rectifier 1 40040917 T84300 549 130 Triac 80 400 44937 02201M 629 313 Rectifier 1 60040918 T8430M 549 130 Triac 80 600 44938 02201N 629 313 Rectifier 1 80040919 T8440B 549 130 Triac 80 200 45411 03202Y 577 350 Diac 2 pk 29-3540920 T84400 549 130 Triac 80 400 45412 03202U 577 350 Diac 2 pk 25-4040921 T8440M 549 130 Triac 80 600 TA7892 02601B 723 308 Rectifier 1 20040922 T8450B 549 130 Triac 80 200 TA7893 026010 723 308 Rectifier 1 40040923 T84500 549 130 Triac 80 400 TA7894 02601M 723 308 Rectifier 1 60040924 T8450M 549 130 Triac 80 600 TA7895 02601N 723 308 Rectifier 1 80040925 T6400N 593 55 Triac 40 80040926 T6410N 593 55 Triac 40 800 .•. Integrated thyristor and rectifier.40927 T6420N 593 55 Triac 40 80040937 56400N 578 218 5CR 35 80040938 5641ON 578 218 5CR 35 80040942 52400A 567 151 5CR 4.5 10040943 52400B 567 151 5CR 4.5 20040944 524000 567 151 5CR 4.5 40040945 52400M 567 151 5CR 4.5 60040952 56420N 578 218 5CR 35 80040956 02540F 580 345 Rectifier 40 5040957 02540A 580 345 Rectifier 40 10040958 02540B 580 345 Rectifier 40 20040959 025400 580 345 Rectifier 40 400

12

1CE-402 "Operating Considerations for RCA Solid-State Devices" 354

AN-3418 "Design Considerations for the RCA-S6431M Silicon ControlledRectifier in High-Current Pulse Applications" 359

AN-3469 "Application of RCA Silicon Controlled Rectifiers to theControl of Universal Motors" 364

AN-3551 "Circuit Factor Charts for RCA Thyristor Applications(SCR's and Triacs)" 375

AN-3659 "Application of RCA Silicon Rectifiers to Capacitive Loads" 380

AN-3697 "Triac Power-Control Applications" 386

AN-3778 "Light Dimmers Using Triacs" 394

AN-3780 "A New Horixontal-Deflection System Using RCA-S3705M andS3706M Silicon Controlled Rectifiers" 400

AN-3822 "Thermal Considerations in Mounting of RCA Thyristors" 410

AN-3886 "AC Voltage Regulators Using Thyristors" 416

AN-4124 "Handling and Mounting of RCA Molded-Plastic Transistorsand Thyristors" 422

AN-4242 . . . . . . . . . . . . "A Review of Thyristor Characteristics and Appl ications" 430

AN-4537 "Thyristor Control of Incandescent Traffic-Signal Lamps" 444

AN-4745 "Analysis and Design of Snubber Networks for dv/dtSuppression in Thyristor Circuits" 451

AN-6054 "Triac Power Controls for Three-Phase Systems" 456

AN-6096 "Solid-State Approaches to Cooking-Range Control" .462

AN-6141 "Power Switching Using Solid-State Relay" 470

ICAN-6182 "Features and Applications of RCAIntegrated-Circuit Zero-Voltage Switches" 475

m ~ReA ~~Mod. TO-S

Triacs Modified TO-S With HeatRadiator

IT(AMS) 2.5A 2.5A 2.5A 2.5A 2.5A 2.5A 2.5A 2.5A

ITSM 25A 25A 25A 25A 25A 25A 25A 25A

VOROM(Vl 100 T230QA T2301A T2302A 2N5754 T2313A T2310A T2312A T2311A

200 T2300B T2301 B T23028 2N5755 T2313B T2310B T23128 T23118

400 T2300D T2301D T2302D 2N5756 T2313D T2310D T2312D T231100

450a:..600 2N5757 T2313M0

Z800..

in IGT(mAl

1+,111- 3 4 10 25 25 3 10 4

1-,111+ 3 4 10 40 40 3 10 4

VGT(V)

All Modes 2.2 2.2 2.2 2.2 2.2 2.2 2.2 2.2

File No. 470 431 470 414 414 470 470 431

Page No. 33 40 33 28 28 33 33 40

VOROM(V) 100 T2306A T2316A

w 200 T2306B T23168

" 400 T2306D T2316D

""~~ 4500_ 600>~0'" IGT(mAI:li 1+,111- 45 45N

VGT(VI

1+,111+ 1.5 1.5

File No. 406 406

Page No. 47 47

IT RMS) a.SA a.SA

VOROM(VI 200 T23048 T23058Z 400 T2304D T23050~g tGT(mAl

8~ 1+.111- 10 25..~1 .111+ 10 400

VGT(V)

All Modes 2.2 2.2

File No. 441 441

Page No. 41 41

TO·66· TO·66 TO-22DAB Press FitWithHeatRadiator

-,.~.

o? ••,"~

(t~'ReA ~ '"

TriacsVER$AWATT

ISOWATTIT(RMSI 6.DA 15.0A 6.0A 6A 6A B.OA 8A 10.0A 15.0A

'T<M 10QA 100A 10QA 60A 100A 100A 100A 100A 100A

VDROM(VI 100 T2B50A

c 200 T2700B T2710B T2500B T2800B T2850B 2N5567 2N5571a: 400 T2700D T2710D T2500D T2800D T2B50D 2N5568 2N5572..C 450 T2801DFZ.. 600 T2800M T4101M T4100MI-

'" 800

IGT(mAl

1+,111- 25 25 25 80 25 25 25 50

1-,111+ 40 40 60 - 60 60 40 80

VGT(VI

All Modes 2.2 2.2 2.5 4.0 2.5 2.5 2.5 2.5

File No. 351 351 615 493 364 540 457 458

Page No. 62 62 49 75 62 79 92 85

VOROMIV) 100

200 T2706B T4706B T2716B T2806B T4107B T4100Bw".. 400 T2706D T47060 T27160 T2806D T41070 T41060':;:1:

450CU>~ 600o~

'GT(mAIffiN 1+,111- 45 45 45 45 45 45

VGT(VI

1+,111+ 1.5 1.5 1.5 1.5 1.5 1.5

File No. 406 406 406 406 406 406

Page No. 47 47 47 69 69 69

IT(RMSI 6A 10.A 15.0A

VOROM(VI

200 T4105B T4104B T4103Bz 400 T41050 T4104D T410300

~S IGT(mAI

Ow 1+,111- 50 50 50" .. 1 , 111+ 80 80 800VGT(VI

All Modes 2.5 2.5 2.5

File No. 443 443 443

Page No.99 99 99

Stud PressFit Stud

0:)__ v

~.-;;

ReA\ ,

Triacs IsolatedStud

'TIRMSI 10.0A 15.0A 10.0A 15.0A 30.0A 40.0A 30.0A 40.0A

ITSM looA looA lOOA looA 300A 300A 300A 300AVOROM(V) 100

200 2N5569 2N5573 T4121B T4120B T6401B 2N5441 T64118 2N5444

c 400 2N5570 2N5574 T4121D T4120D T64010 2N5442 T64110 2N5445a:

450"C 600 T4111M T4110M T4121M T4120MZ T6401M 2N5443 T6411M 2N5446

" 800 T6400N T6410N..'" IGT(mA)

1+,111- 25 50 25 50 50 50 50 501-;111 40 80 40 80 80 80 80 80

VGTIV)

All Modes 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5File No. 457 458 457 458 459 593 459 593Page No. 92 85 92 85 107 55 107 55

VOROMIV)100

w 200 T4117B T4116B T64078 T6406B T6417B T64168

"" 400 T4117D T41160 T6407D T64060 T6417D T64160~:r 450OU>!: 600 T6407M T6406M T6417M T6416Mo~ IGT(mA)ffiN 1+.111- 45 45 45 45 45 45

VGTIV)

1+.111+ 1.5 1.5 1.5 1.5 1.5 1.5File No. 406 406 406 406 406 406Page No. 69 69 47 47 47 47

'TIRMSI 6A 10.0A 15.0A 25.0A 40.0A 25.0A 40.0A

VOROMIV) 200 T41158 T4114B T41138 T64058 T64048 T64158 T6414BZ 400 T41150 T41140 T41130 T64050 T64040 T64150 T641400

~i= IGT(mA)8: 1+.111- 50 50 50 80 80 80 80..~ 1-.111+ 80 80 80 '20 120 120 1200

VGTIV)

All Modes 2.5 2.5 2.5 3.0 3.0 3.0 3.0File No. 443 443 443 487 487 487 487PageNo. 99 99 99 114 114 114 114

Isolated Press Stud "0.Stud Fit l, l-l Stud

I K, K-1 ,~M,

~" M·',-- .•... •• 1 I ,

ReA J,

Triacs '9

IT(AMSI 30.0A 40.0A 60A 80A 60A 80A 60A 80AlTSM 300A 300A 600A 850A 600A 850A 600A 850A

VOAOMIV) 100200 T64218 T6420B T84018 T84308 T84118 T84408 T84218 T84508

C 400 T6421 0 T64200 T8401D T84300 T84110 T84400 T8421 0 T84500"''" 450CZ 600 T6421M T6420M T8401M T8430M T8411M T8440M T8421M T8450M'">- 800 T6420N'" IGT(mAl

1+,111- 50 50 75 75 75 75 75 751 .111+ 80 80 '50 '50 '50 '50 150 150

VGTIVI

All Mod" 2.5 2.5 2.8 2.5 2.8 2.5 2.8 2.5File No. 459 593 725 549 725 549 725 549Page No. '07 55 122 '30 '22 '30 '22 130

VOAOMIVI

100w

200"'" 400>-...• :z:4500 •••

>>-600o~

"'''' IGT(mA)wN

1+,111-

VGT(V)

1+,111+

File No.

Page No.

ITIAMS)

VOAOM(VI 200z 4000~~ IGT(mA)

8~ 1+,111-..•~1,111+0

VGT(V)

All Modes

File No.

Page No.

TO-8 TO-66

]\ .•.o-RCASCR's

IT{AM5) 2.0A 4.5A 5.0A FTO FTO FTO FTO FTO FTO5.0A 5.0A 5A 5.0A 5.0A 5.0A

IT5M 60A 200A 60A 80A 80A 80A 75A(lPMI 50A 50A

VOROM 15

VRROMIVI 25

30

50

'00 52400A 53704A

150

200 2N3528 524008 2N3228 537008 537048

250

300

400 2N3529 524000 2N3525 537000 537040

500

600 2N4102 52400M 2N4101 m~~ 53700M 53704M 53701M

700 537045 537025

750 537035F

800

IGT(mAI 15 15 15 30 40 40 35 45 40

VGT(V) 2 2 2 4 3.5 3.5 4 4 4

File No. 114 567 114 354 306 690 476 522 522Page No. 144 151 '44 187 172 180 192 '94 194

TG-66 With Low Profile To-5 To-5 TG-220AB•.••at Rad. Mod. TG-S With Heat With

R •••• Heat

m dSpreader

RCA~~ , ~~

- '"SCR'S VERSAWATT

tTIRMSI 5.0A FTO 7.0A 3.3A 7.0A 4.OA 4.OA 4A B.oASA

IT5M 60A 80A looA ,00A ,00A 35A 35A 35A looA

VOROM '5 520600 520610 520620

VRROMIV) 25

30 5206QY 52061Y 52062Y

50 52060F 52061F 52062F

100 53714A 52060A 52061 A 52062A 52BooA

150

200 527108 S37148 526008 526108 526208 520608 520618 520628 528008

250

300 5206QC 52061C 52062C

400 527100 537140 526000 526100 526200 520600 520610 520620 528000

500 52060E S2061E S2062E

600 S2710M 53714M S2600M S2610M 52620M S2060M S2061M 52062M

700 S3714S

750

800

IGT(mAl '5 40 15 15 '5 0.2 0.5 2 '5

VGT(Vl 2 3.5 1.5 1.5 1.5 0.8 0.8 0.8 '.5

File No. 266 690 496 496 496 654 654 654 50'

Page No. 164 180 156 156 '56 138 138 '38 '66

TO-3 Press Fit Stud. ~'J,.p ~

I •••• Q=: 'DiJRCA W:<II \. iSCR's .IT(RM5l 12.5A 20.0A 35.0A 20.0A 35.0A

ITSM 200A 200A 350A 200A 350A

VOROM 15VRROM(VI 25

3050100 2N3668 S6200A 2N3870 S6210A 2N3896

150200 2N3669 862008 2N3871 562108 2N3897

250300400 2N3670 862000 2N3872 862100 2N3898

500600 2N4103 86200M 2N3873 86210M 2N3899

700750800 86400N S641QN

IGT(mA) 40 15 40 '5 40VGT(V) 2 2 2 2 2

File No. 116 418 578 418 578Page No. 203 210 218 210 218

Isolated TD-48Stud

~.oW

RCASCR's'T(RM51 20.0A 35.0A 1G.OA 25.0A Pul. FTO FTO

Mod. 35.0A 35A35.0A

'TSM 200A 3SOA 125A 150A 1SOA 180A 2SOA

VOROM '5VRROM(V) 25 2N1842A 2N681

30SO 2N1843A 2N682 2N3654

100 S6220A 56420A 2N1844A 2N683 2N3650 2N3655

'50 2N1845A 2N684

200 56220B 56420B 2N1846A 2N685 2N3651 2N3656

250 2N1847A 2N6B6300 2N164BA 2N6B7 2N3652 2N3657

400 562200 564200 2N1849A 2N688 2N3653 2N3658500 2N1850A 2N689600 56220M S6420M 2N690 S6431M S7430M S7432M

700750BOO S6420N

IGT(mA) '5 40 45 25 80 180 ,BOVGTIVI 2 2 3.5 3 2 3 3

File No. 4'B 578 28 96 247 408 724Page No. 2'0 2'8 234 225 228 23B 245

00.1 I 00.26II

RCA * ,Rectifiers I I

'0 O.75A 0.75A lA lA 0.75A O.75A lA 1AInsu- Insu-lated lated

IFSM 15A 15A 35A 35A 35A 35A 50A 50AVRRM(VI 50 lN536 lN2858A

100 tN440B lN537 lN2859A200 lN441B lN538 lN2860A lN3193 lN3253 lN5211 lN5215300 ,UA41B "lN539 lN2881A400 lN4438 lN540 lN1763A lN2B62A lN3194 lN3254 lN5212 lN5216500 tN444B lNl095 lN1764A lN2883A600 tN445B lN547 lN2964A lN3195 lN3255 lN5213 lN5217800 'N3196 lN3256 lN5214 lN52181000 lN3563File No. 5 3 89 91 4' 41 245 245Page No. 252 255 258 265 294 294 270 270

~I I

•RCA - -RectifiersD().lS

Plastic (Plastic) 00-4 00-5

'0 lA 1.5A 6A 12A 20A 40AIFSM 30A 50A 150A 240A 350A 800AVRRMIVI 50 D120tF lN5391 lNl341B lN1199A lN248C tNt183A

100 D1201A lN5392 lNl342B lNl200A lN249C lN1184A200 012018 'N5393 lN13448 lNI202A lN250C lN1186A300 lN5394 tNl345B tNl203A tN1196A tNtlS7A400 012010 lN5395 lNl3488 lNl204A lN1196A lN1188A

500 lN5396 lNl3478 tN1205A lN1197A lN1189A

600 D1201M lN5397 lNl3488 lNl206A tN1198A lNlt90A800 01201N lN53981000 D1201P lN5399File No. 495 478 58 20 6 38Page No. 277 273 281 283 287 291

~I

tRCA~,

Rectifiers00-26 Plastic 00-4 OO-S

'0 lA lA 6A 6A 12A 12A 20A 20A 30A 40A

IFSM 3SA SOA 7SA 125A 150A 25QA 225A 30M 300A 700A

VRRMIV) 50 02601 F 02201 F lN3879 D2406F lN3889 D2412F lN3899 D2520F lN3909 D2540F

100 02601 A 02201 A lN3880 D2406A lN3890 D2412A .'IN3900 D2520A lN391Q 02S40A

200 026018 02201 B lN3881 024068 lN3891 024128 lN3901 025208 lN3911 025408

300 lN3882 02406C lN3892 D2412C 1N3902 D2520C lN3912400 026010 022010 lN3BS3 024060 lN3893 024120 lN3903 025200 lN39'3 025400

500

600 D2601M D2201M D2406M D2412M 02520M D2540M

800 D2601N D2201N

1000

ReverseRecoveryTimetrr

Typ. 200 ns. 200 ns. - 200 ns. - 200 ns. - 200 ns. - 200 ns.

Max. 500 ns. SOD ns. 200 ns. 350 ns. 200 ns. 350 ns. 200 ns. 350 ns. 200 ns. 350 ns.

File No. 723 629 726 663 727 664 728 66S 729 580

Page No. 308 313 323 318 331 326 339 334 342 345

i

I l I

~ -RCARectifiers 00-15

00·26 00-1 !Plastlcl

'0 IA IA lA - lA

IFSM 70A lOA 20A 70A 30A 50A

Trace 02601 EF D2103SF D12Q1MCommutallng 02601 OF 021035 02201Mlinearity D2600EF 02201 aRegulator 02201 B

Clamp 021015

File No. 354 354 354 522 522 629Page No. 303 303 303 298 298 313

I

RCA ,Diacs 00-15

(Plastic)

D3202Y 03202U

'ok 2A 2A

VISO' 29 min. 35 max. V 25 min. 40 max. V

H-VISOII- l-vlBOII +3 max. V +3 max. V

IC>V± 9 min. V 9 min. V

File No. 517 517Page No. 350 350

.••....--"-- ...•

RCA T

ITR's*TO-56

IT(AMS) TRACE RETRACE5A 5A

'TSM 50A 50AVOROM(V) 400 538000

500 S3800E550 S3800EF

600 S3800M

650 S3800MF

700 538005

750 S3800SF

IGT(mA) 40 45VGT(V) 4 4File No. 639 639Page No. 199 199

Appl ication InformationTriacs

LOW-CURRENT SENSITIVE-GATECurrent Voltage Package Series Typical Applications

IT(RMS)-A Range· V

1.6- 2.5 100-400 TO-5 & TO-5 w Red. T2300 T2310 Ie Control Circuit to Power ControlT2301 T2311T2302 T2312

1.9 - 2.5 100-600 TO-5 & TO-5 w Red. 2N5757 T2313

6 200-400 TO-220AB (VERSAWATT) T2500

3.3 - 6 200-600 TO-66 & TO-66 w Red. T2700 T2710

6-8 100-450 TO-220AB (VERSAWATTI T2800 T2850T2801

15 200-600 Press-Fit 2N5572 T4100

15 200-600 Stud 2N5574 T4110

15 200-600 Isolated-Stud T4120

10 200-600 Press·Fit 2N5568 T4101

10 200-600 Stud 2N5570 T4111 General Purpose10 200-600 Isolated-Stud T4121 AC Power Switching15 200-600 TO-66 T4700 • Light Control40 200-800 Press-Fit 2N5443 T6400 • Motor Control-Static & Speed40 200-800 Stud 2N5446 T6410 • Heat/Comfort Control40 200-800 Isolated-Stud T6420 • Solid State Static Switching30 200-600 Press-Fit T6401 • Three Phase Power Control30 200-600 Stud T6411

30 200-600 Isolated-Stud T6421

60 200-600 Press-Fit, Flex. Id T8401

60 200-600 Stud Flex. Id T841160 200-600 Isolated-Stud T8421

Flex.ld80 200-600 Press-Fit T843080 200-600 Stud T844080 200-600 Isolated-Stud T8450

0.5 200-400 TO-5 T2304 T230515 200-400 Press-Fit T410315 200-400 Stud'" T411310 200-400 Press-Fit T4104 Airborne-Type Equipment and10 200-400 Stud T4114 60-Hz Applications Requiring6 200-400 Press-Fit T4105 High Commutating dv/dt6 200-400 Stud .• T4115 • Motor Starters

40 200-400 Press-Fit T640440 200-400 Stud .•. T641425 200-400 Press-Fit T640525 200-400 Stud .•. T6415

Triacs in most series are characterized for applications utilizing Zero-Voltage switching withRCA-CA3058, CA3059, and CA3079 IC triggering circuits - see product matrix for types in each series.

For Types not listed, contact your RCA Representative.

2 200-600 TO-8 2N4102 Fuel Igniters4.5 100-600 TO-8 S2400 CD Ignition, "Crowbars"

3.3 - 7 200-600 TO-5, TO-5 w Red., S2600 52610 CD IgnitionTO-5 w Spdr. S2620

1.7 - 5 200-600 TO-66 & TO-66 w Red. 2N4101 S2710 CD Ignition, Small Motor Control

8 100-400 TO-220AB (VERSAWATT) S2800 CD Ignition, Regulators,Small Motor Control,and General Purpose

12.5 100-600 TO-3 2N4103

20 100-600 Press-Fit S6200 General Purpose20 100-600 Stud S2610

20 100-600 Isolated-Stud S6220

Application InformationSCR's (cont'd)

GENERAL PURPOSE PHASE CONTROLCurrent Voltage

Package Series Typical ApplicationsIT(RMS)-A Range· V

10 100-600 Press-Fit S620110 100-600 5tud 52611 General Purpose10 100-600 Isolated·Stud 5622135 100-800 Press-Fit 2N387335 100-800 5tud 2N389935 100-800 Isolated-Stud 52642025 25-600 TO-48 2N69016 25-500 TO-48 2N1850A

5 200-600 TO-66 53700 High-Frequency Power Supplies5 600 TO-66 53701 Laser Diode Driver5 700-750 TO-66 53702 53703 110° TV Deflection5 100-700 TO-66 & TO-66 w Rad. 53704 537145 600 TO-66 53705 53706 90° TV Deflection

35 600 TO-48 56431 Pulse Modulators

35 50-600 TO-48 2N3653 2N3658 I nverters, Choppers

ITR'sTV Horizontal Deflection

5 400- 750 TO-66

RectifiersSTANDARD-lead-Type Hermetic and Plastic Packages

Current VoltagePackage Series Typical ApplicationsIO-A Range - V

0.75 100-600 00-1 1N445B 1N5471 50-600 00-1 lN1764A 1N2864A

1.5 50-1000 Plastic 1N5399 012010.75 200-800 00-26 1N3196

1 200-800 00-26 lN5214 General Purpose0.75 200-1000 00-26 lN3563

1 200-800 00-26 lN5218

6 50-600 00-4 1N1348B12 50-600 00-4 1N1206A General Purpose20 50-600 00-5 1N1198A40 50-600 00-5 lN1190A

Current VoltagePackage Series Typical Applications

IF(RMSrA Range - V

3 700-750 00-1 02102 TV Deflection. Inverters,1.5 50-800 00- 15 (Plastic) 02201 and High-Frequency1.9 50-800 00-26 02601 Power Supplies

9 50-600 00-4 1N3883 0240618 50-600 00-4 lN3893 02412 Inverters and High-Frequency30 50-600 00-5 1N3903 02520 Power Supplies30 50-400 00-5 1N391360 50-600 00-5 02540

Triacs

[Klm3LJDSolid StateDivision

Thyristors2N5754 2N57562N5755 2N5757T2313 Series

,"Cjln:-~:~:.MAIN 1 INAL 1TERMINAL 2 I

l-LGATE

II

J I3/ 171

For Low-Voltage Operation - 2N5754, T2313A (40684)-For 120-V Line Operation - 2N5755, T2313B (40685)-For 240-V Line Operation - 2N5756, T2313D (40686)-For High-Voltage Operation - 2N5757, T2313M (40687)-

2N57542N57552N57562N5757

Features:.25/40 mA IGT • Shorted Emitter Design

• 3-Lead Package for Printed Circuit Board Applications• Small Size ... Suitable for Remote Switching Applications

These RCA triacs are gate-controlled full-wave silicon acswitches that are designed to switch from an off-state to anon-state for either polarity of applied voltage with positive ornegative gate triggering voltages.

The gate sensitivity of these triacs permits the use ofeconomical transistorized control circuits and enhances theiruse in low-power phase control and load-switching appli-cations.

Types 2N5754, 2N5755, 2N5756, 2N5757* utilize acompact package (similar to JEDEC TO-51 and have an RMSon-state current rating of 2.5 A and repetitive peak off-statevoltage ratings of 100, 200,400, and 600 volts, respectively.

Types T2313A, T2313B, T2313D, T2313M'" are the same asthe 2N5754, 2N5755, 2N5756, 2N5757, respectively buthave factory-attached heat-radiators and are intended forprinted-circuit board applications.

• For either polarity of main terminal 2 voltage (VMT2) with referenceto main tenninal l.

t For either polarity of gate voltage (VG) with reference to mainterminal 1.

t For infonnation on the reference point of temperature measurement,see Dimensional Outlines.

• In accordance with JEDEX:; registration data format (JS-14, RDF-2).

MAXIMUM RATINGS, Absolute-Maximum Values:For Operation with 50/60-Hz, Sinuosidal Supply VoltageResistive or Inductive Load

• REPETITIVE PEAK OFF-STATE VOLTAGE· VDROMGate Open, TJ = 65° to 100°C

2N57 54, T2313A _... - ..2N5755,T23l3B .2N5756, T23l3D .2N5757, T23l3M.

RMS ON-STATE CURRENT

Conduction angle· 360°; 0

* Case temperature (TC) = 70 C2N5754, 2N5755, 2N5756, 2N5757

Ambient temperature (TA) = 2SoCT23 I 3 serie~

For other conditions.

PEAK SURGE (NON-REPETITIVE)ON-STATE CURRENT

* For one full cycle of applied principalvoltage (6o-Hz, sinusoidal)

For one full cycle of applied principalvoltage (50-Hz, sinusoidal) .

For more than one full cycle of appliedvoltage ..

• PEAK GATE-TRIGGER CURRENTFor 1 J.J.s1 max

GATE POWER DISSIPATION:

• PEAdFor 1 J.J.smax

AVERAGE

* Forcase temperature (TC) = 60oC.

* For ambient temperature (TA) = 2soC ...

• TEMPERATURE RANGEf:Storage. . . .

Operating (case) .

• LEAD TEMPERATURE:During soldering, terminal temperature at

a distance ~ 1/16 in. (1.58 mm) from thecase for 10 s .................•.

100200400600

IT(RM5)

1.9 A

See Figs. 2,3.4, & S.

IT5M

25 A

21 A

See Fi~.6.

IGTMA

PGM10 W

PG(AV)0.15 W

0.05 W

-65 to 150 °c-65 to 100 °c

LIMITS

ALL TYPESCHARACTERIST IC SYMBOL UNITS

Min. Typ. Max.

Peak Off-State Current:.IOROM

Gate Open, TJ = 1000C and VDROM = Max. rated value 02 075 mA

Maximum On-State Voltage:.

For iT = 10 A (peak) and TC = 25°C ........... ..... - ... VTM 2.2 2.6 VFor iT = 3.5 A (peak) and TC = 250C .. ................ 1.8

DC Holding Current:.Gate Open, Initial principal current = 150 mA (OCl, VO= 12V

At TC = 25°C .. IHO 6 35 mAAt TC = -65°C .. .......................... . ..... 20 82 -For other case temperatures ... .. .................•.. - See Fig.8.~

Critical Rote-of.Rise of Off.State Voltage:.

For Vo = VOROM, exponential voltage rise, dvldtand gate open, TC = lOOoC 10 100 VIpS

DC Gate-Trigger Current:. t Mode VMT2 VG

For Vo = 12 V (OCl, I' ositive positive 5 25RL = 300 , and III" egative negative 5 25

TC = 25°C I' positive negative 10 40111+ negative positive 10 40

TC = -65°C 1+ IGT60 -

mApositive positive 30

III negative negative 30 60 -I' positive negative 40 100 -

111+ negative positive 40 100 -

F or other case temperatures .. -See Fig.1! ~DC Gote-Trigger Voltage:- t

For Vo = 12 V (OCI and RL = 300At TC = 25°C .. . ...... .... .... ....... .... ... 0.9 2.2At TC = -65°C . .. . . . . .... . . .. .. . ... . . . . . ... VGT 1.5 3- V.... ... ........For other case temperatures .. ... , ......... ....... -See Fig.12. ~

For vo = VOROM and RL = 1250At TC = 1000C ........ ....... ........... ......... 0.2

Thermo I Res istonce, Junction_fa_Case:

Steady·State ......... .......... BJ·C 8.5 °C/W

• For either polarity of main terrlliral 2 voltage (VMT2)With reference ° main terminal .

• In accordance with JEOEC registration data formatUS'l4, ROF ·2).

QUADRANTNo.1

MAIN TERMINAL 2--ON POSITIVESTATE

/IH

,;

QUADRANT IHNo. III

MAIN TERMINAL 2 ONNEGATIVE STATE _ T

123fULL-CYCLE RMS ON-STATE AMPERES [ITtRMSI]

Fig. 2 - Power dissipation 10'3". on-state current.

CURRENT WAVEFORM: SINUSO IOAL ® ~'~lOAD; RESISTIVE OR INDUCTIVECONOUCTION ANGLE: 360·

! FOR DEVICE SOLDERED

100 ON 1/16-· THICK COPPER

'" HEAT SINI<, TEMPER-Z ATURE MEASURED ON

'" HEAT SINK 1/4" FROM~ u 90 CASE CAP.".'l'1 LEAD LENGTH ~ I"

~ ~ 80 MOUNTING® :Q±114'"' .... 0)-""~cr0",

j ~ 70 FOR DEVICE SOLDERED

"", ON JfI6"-THICK COPPER" .... ffiUNT'NG HEAT SINK. TEMPER

" ATURE MEASURED ON" 60 ®X HEAT SINK 1/4~ FROM.,CASE CAP.

" LEAD LENGTH ~ I"50

SUPPLY FREQUENCY: 50/60 Hz

'" ~~~D~~:~~~~r~EAMPERES [IT(RMSJ] :2.5

~CASE TEMPERATURE ITel: 70·C

z I I I I I Io 25

1'\ GATE CONTROL MAY BE LOST DURING AND -

~'i IMMEDIATELY FOLLOWING SURGE CURRENT -.... '" " INTERVAL.

~; 20

"-OVERLOAD MAY NOT BE REPEATED UNTIL

JUNCTION TEMPERATURE HAS RETURNED TO

~~ ""- STEADY - STATE RATED VALUE.

~~ 15 ,"z"'--"~4 " I

10~H'~ -........

'" 50 Hz

~ 5I

0 I4 2 4 6 •

CURRENT WAVEFORM: SINUSOIDAL rl~GmlLOAD: RESISTIVE OR INDUCTIVECONDUCTION ANGLE: 3600

CASE TEMPERATURE (TC): MEASURED I ~AS SHOWN ON DIMENSIONAL OUT LINE 0 180"\J36<:J'

'"'" 1005;> CONDUCTION ANGLE

"'- • 81 + 8m-' u 90'" ....,,-~ '"Ocr-' " 80-' ...." "cr" '"" "'-" " 70x'"" ....

" 600.5 1.5 2 2.5 3.5

RMS ON-STATE AMPERES [IT(RMS1]92LS-138eR3

Maximum allowable case temperature vs. on-statecurrent.

® FORCED-AIR COOLED,400 TO 1000 FT/MIN,HEAT RADIATOR ATTACHED.® TRIAC WITH HEAT RADIATOR© TRIAC,NO HEAT RADIATOR, PRINTED-CIRCUIT BOARD MOUNTED.@TRIAC,NO HEAT RADIATOR

100 . . __ .~ ~.

0.5 I 1.5 2 2.5

RMS ON-STATE AMPERES [InRMSI]

92LS- 2.097"2

Fig. 5 - Maximum allowable ambient temperature vs. on-statecurrent.

I 2 3POSITIVE OR NEGATIVE INSTANTANEOUS

ON- STATE VOLTS (\IT) 92C5-15713

92CS-15719RI

Fig. 8 - DC holding current (positive or negative) vs. casetemperature.

._-t:\ ,,, ••.•••.•••..,,,, ••...•••" •...•.•'"'.~ •.••..ENCLOSED AREA INDICATES

6 LOCUS OF POSSIBLETRIGGERING POINTS.

-;:.FV>'::;§;

'"wg 10

~ 8,w

5u

"w>

~'""w>i=in~

0.10.001 4 6 80.01 4 6 8 0.1 4 6 8 I

POSITIVE OR NEGATIVE DC GATE-TRIGGER AMPERES(IGT)

92CS-15715RI

Fig. 9 - Gate trigger characteristics and limiting conditions fordetermination of permissible gate trigger pulses.

NOTE, For incandescent lamp

loads which produce burnout cur-

rent surges with 12t values greater

than 2.5 ampere2 seconds. connect

a IO-ohm resi stor of appropri ate

power rating in series with the

load. This rating can be deter-

mined as follows:

Power Rating of = IO(rms load current)2IO-ohm Resistor

RCATRIAC FOR INDUCTIVE

LOADS CONNECTPOINTS AI AND BITO TERMINALSA AND 8 RESPECT-IVELY.

r81 92LM-1972R2

o-70 -GO -50 -40 -30 -20 -10 0 10 20 30 40

CASE TEMPERATURE {Tc)_OC

REFRENCEPOINT FOR CASE

~~~~~~T~:;T•

• The temperature reference point specified should be used whenmaking temperature measurements. A low·mass temperature probeOr thermocouple having wire no larger than AWG No. 16 should beattached at the temperature reference point.

INCHES MILLIMETERSSYMBOL NOTES

MIN. MAX. MIN. MAX.

1,0 . 190 .210 4.83 5.33A .240 .260 6.10 6.60I,b .017 .021 .44 .53ID .335 .366 8.51 9.30jDl .330 8.13 8.38h .015 .035 .38 .89i .028 .035 .71 .89k .029 .045 .74 1.14I .975 1.025 24.76 26.03P .100 2.54Q 1, 45° NOMINAL3 50° NOMINAL

</>P,

"t-n t-~".." 'POIN r FOR CASETEMPERA TUREMEASUREMEtH&

r'F;J-'[}

==

MOUNTING TAB(LEAD NO 2 BEHINDMOUNTING TAB)

4 DIMPLEDSf ANDOFFS

1MOUNTING

TABS(NOH2l

SYMBOLINCHES MILLIMETERS

NOTES.,. .AX .,. .AX• I - 630 - 16.000 '101 1235 3D61 ]1]7

0,

I7" 755 18923 19177

E 87S .., 22.22 2299

IF 040 OSS 1.02 140F, 170 115 431 171L 910 - 23.37 -

</>P 191 ]G' 7.493 7.747</>P, 093 09\ 2.362 2.413

• 048 061 121 157., 998 1002 25.349 25.450 )", 687 689 17.45 1750 )

w 048 Oil 1.219 1320

NOTES,I. 0.035 e.R.S., finish: electroless nickel plate

2. Recommended hole size for printed-circuit board is 0.070 in.

(1.78 mm) dia.

3. Measured at bottom of heat radiator

.•.The specified temperature-reference point should be used whenmaking temperature measurements. A low--mass temperature probeOr thermocouple having wire no larger than AWG No. 26 should beattached at the temperature reference point.

TERMINAL CONNECTIONS

For Types 2N5754, 2N5755, 2N5756, 2N5657

Lead No.1 - Main terminal 1

Lead No.2 - Gate

Case, Lead No.3 - Main terminal 2

Lead No.1 - Main terminal

Lead No.2 - Gate

Heat Rad., Lead No.3 - Main terminal 2

[]Qm5LJ1]Solid StateDivision

ThyristorsT2300 T2302 T2310 T2312

Series

.ltDjI~M""IN

~:~~INAL1~ _~~=~l~_GATE

I

T2310 Series

T2312 Serie.

2.5-Ampere Sensitive-GateSilicon TriacsFor Low-Power Phase-Control and Load-Switching Applications

For Low-Voltage Operation - T2300A, T2302A, T2310A, T2312A(40525, 40528, 40531, 40534)*

For 120-V Line Operation - T2300B, T2302B, T2310B, T2312B(40526, 40529, 40532, 40535)*

For 240-V Line Operation - T2300D, T2302D, T2310D, T2312D(40527, 40530, 40533, 40536)*

-Numbers in parentheses (e.g. 40525) are former ReA type numbers.

Features:• Very High Gate Sensitivity

3 mA max. for T2300 and T2310 series10 mA max. for T2302 and T2312 series

RCA T2300·, T2302-, T2310-, and T2312-series triacs aregate-controlled full-wave ac silicon switches. They aredesigned to switch from a blocking state to a conductingstate for either polarity of applied voltage with positive ornegative gate triggering.

The T2302 series has higher dv/dt capability and higher gatetrigger current requirements than the T2300 series. The gatesensitivity of these triacs permits the use of economicaltransistorized and IC control circuits and enhances their usein low-power phase control and load-switching applications.

• 3-Lead Package for Printed CircuitBoard Applications

• Shorted Emitter Design

The T2300 series has rms on-state current ratings of 2.5amperes at a case temperature of +60°C while the T2302series has the same ratings at a case temperature of +70°C.

The repetitive peak off-state voltage rating for T2300A andT2302A is 100 volts; for T2300B and T2302B, 200 volts;and for T2300D and T2302D, 400 volts.

The T231 0 and T2312 series are the same as the T2300 andT2302 series, respectively, but have factory-attached heat-radiators and are intended for printed-circuit-board appli-cations.

MAXIMUM RATINGS, Absolute-Maximum Values:

For Operation with 50/50-Hz, SinuDsidal Supply VOltage and Resistive or Inductive Load

REPETITIVE PEAK OFF-STATE VOLTAGE. IGate Openl:

TJ = -4QOC to +900 C: T2300A, T2310AT2300B. T231 OBT2300D. T2310D

TJ = _400 C to +1000C: T2302A. T2312AT2302B. T2312BT2302D, T231 2D

RMS ON-STATE CURRENT (Conduction Angle = 3600):

T C = 600 c: T2300 seriesTC = 70° C: T2302 seriesT A = 250 C: T2300 series

T2302 seriesFor other conditions

For heat-radiator types.

PEAK SURGE (NON-REPETITIVE) ON-STATE CURRENT:

For one full cycle of applied principal voltage60 Hz sinusoidal.50 Hz sinusoidal.

For more than on full cycle of applied voltage

2.5 A2.5 A0.35 A0.40 A

See Figs. 2, 3. 4 & 5

See Figs_6 & 7

25 A21 A

See Fig. 8

GATE POWER DISSIPATION+:Peak (For 1 IJS max.l

Average: T C = 600 CTA" 250 C

TEMPERATURE RANGEt:StorageOperating (case): 40525,40526, 40527

40528,40529,40530 .Heat-radiator types (From -400 C) Upper limits.

LEAD TEMPERATURE:During soldering, terminal temperature at a distance2' 1/16 in.

(1.58 mm) from the case for 10 s .

10 W

0.15 W0.05 W

+40to+150 DC-40 to +90 oC-40to+100 0C

See Figs. 6 & 7

For information on the reference point oftemperature measurement see DimensionalOutlines.

• For either polarity of main terminal 2 voltage(VMT2) with reference to main termin~1 1.

ELECTRICAL CHARACTERISTICSAt Maximum Ratings and at Indicated Case Temperature (TC) Unless Otherwise Specified

Peak Off-State Current: •Gate Open and VOROM = Max. rated value

At Tj = +1000 C .. __ .. __ . __ _ .. _ .At Tj = +900 C , .

Maximum On-State Voltage:'For iT = 10 A (peak) and TC = 250 C .

DC Holding Current:'Gate Open, Initial principal current = 150 mA (OCl, Vo =12

At TC = 250 C __ _ .. _ . _ _ . _ ..For other case temperatures .

Critical Rate-of-Rise of Off-State Voltage:'For Vo = VOROM, exponential voltage rise,and gate open

At TC = +1000 C .At TC = +900 C . .

DC Gate-Trigger Current:.t Mode VMT2For Vo = 12 V (DC). 1+ positiveRL = 30 n, and 111- negative

TC = 250 C 1- positive111+ negative

For other case temperatures .

VGpositivenegativenegativepositive

DC Gate·Trigger Voltage: .• tFor Vo = 12 V (DC) and RL = 30 n

At TC = 250 C .For other case temperatures . .

For vO = VOROM and RL = 125 nAt TC = 1000 C .At TC = +900 C ...............•.......

Thermal Resistance, Junction-to-Case:Steady·State .

LIMITS

T2300 Series T2302 Series

T2310 Series T2312 SeriesSYMBOL UNITS

MIN. TYP. MAX. MIN. TYP. MAX

IOROM - - - - 0.2 0.75 mA- 0.2 0.75 - - -

VTM1.7 2.2 1.7 2.2 V- -

IHO - 2 5 - 6.5 15 mASee Fig. 14 See Fig. 15

dv/dtV/IlS

- - - - 10 -- 5 - - - -

- 1 3 - 3.5 10- 1 3 - 3.5 10- 2 3 - 7 10- 2 3 - 7 10

See Fig. 12 See Fig. 13

- 11 12 2 - 11 12.2

o~~ >~ 'I = o,r'l~B.5 (max.)

(T2300 series)B.5 (max.)

(T2302 series)

QUADRANTNo. III

MAIN TERMINAL 2 ONNEGATIVE STATE

QUADRANTNo.1

MAIN TERMINAL 2POSITIVE

-ONSTATEIH

,,+VDROM

OFF STATE

0.5 1.5 2.5 3

RMS ON-STATE CURRENT [ITlrms )]-A

CURRENT WAVEFORM • SINUSOIDAL rl~9mlLOAD" RESISTIVE OR INDUCTIVERATING APPLIES FOR ALL CONDUCTION

ANGLES.TEMPERATURE IS MEASURED ON BASE AT I ~

POINT MIDWAY BETWEEN LEADS. 0 ,aO'\J360"w

'" 'DO51' T2302CONDUCTION ANGLE,

•• 91 +- 8mw_ Series-' u 90"'I-~~j ~ aD.. ~

'" T2300,. w=> "- Series,. ,. 70

~~,.60

CURRENT WAVEFORM: SINUSOIDAL ® Wfh,-rLOAD: RESISTIVE OR INDUCTIVERATINGS APPLY FOR ALL CONaUCTION ANGLES

FOR DEVICE SOLDERED

'DO ON I/IS"-THICK COPPER

'" T2302 HEAT SINK. TEMPER-

Z ArURE MEASURED ON

'" Series HEAT SINK 1/4" FROM..."u 90 CASE CAP..•.

LEAD LENGTH = I"'l'1~ ~ 80 MOUNTING ® O±'I4'~~ ®;0",Ow

FOR DEVICE SOLDEREDj ~70 T230"w Series

ON I/ISM

THICK COPPER

"1- HEAT SINK. TEMPER-

=> ATURE MEASURED ON,. 60itT'NG HEAT SINK 114

M

FROMX.. ® CASE CAP.,. LEAD LENGTH = ,M,

20o 0.2 0.4 0.6 0.8 1.0

RMS ON-STATE CURRENT I!T (rmsl] - A

0.5 1.0 1.5 2.0 25

RMS ON-STATE CURRENT [IT(rmsl}-A

SUPPLY FREQUENCY" 50/60 Hz

w ~g~D ~~:~~~~I~~URRENT [IT(RMSl]" 2.5A

~CASE TEMPERATURE (TC)" 70°C

zGA~E CONTROL MAY BE LOST DURING AND -0« 25 1\W' IMMEDIATELY FOLLOWING SURGE CURRENT -~'i

0-00 1\ INTERVAL.

~; 20

"-OVERLOAD MAY NOT BE REPEATED UNTIL

JUNCTION TEMPERATURE HAS RETURNED TOwo-"" STEADY-STATE RATED VALUE.

~~ 150'" ......... "'-z'"-'>~u ..••... I'" 10

~Hz~ ,'" 50 Hz

~ 5 I0

2 4 • • 2 4 • • 2 4 • •

0.5 I 1.5 2INSTANTANEOUS PRINCIPAL

VOLTAGE (vT)-V

0.5 I 1.5 2 25

RMS ON-STATE CURRENT [IT( rms)]-A

CURRENT WAVEFORM SINUSOIDALLOAD RESISTIVE OR INDUCTIVECONDUCTION ANGLE 3600

: .... ::

.:

4 :E:-': .._::~: -_: ~~~" ....:::,:,T.:,:,:::I"'!"~I::;to ." :- .~~,:~F .::'.::: -;;,"1/ : .. :~~:.:c:: .. -.....-':L:·· //

131~ ....'~~""'"._---z?

'"w;o~ I 3o.z

owi"~~ 2w!!!>0<I

.:: :.

FI::: ,t:~:-·.,. :::1: . ~~:

CHARACTERISTICS APPLY FOR ALLTRIGGERING MODES.

PRINCIPAL VOLTAGE "12V (DC)LOAD.:: 30 OHMS. RESISTIVE

u0

•••EI

'" 20o!I-

~crcra~'"'"~.:,!<'"

CHARACTERISTICS APPLY FOR INDICATED TRIGGERINGMODES.

PRINCIPAL VOLTAGE aI2V(DClLOAD" 30 OHMS. RESISTIVE

o- 40 -30 -20 -10 0 10 20 30

CASE TEMPERATURE lTc)_OC 92LS-1978RI

Fig. 12 - DC gate·trigger current characteristics for T2300 andT2310 series.

INITIAL PRINCIPAL CURRENT::150mA E ...~~_ ..:~=50 ~::~ :::: =._. :~~F:.:_.- ..- . ...

......... - .... <.. ,''', ... ;:~... . -'-1:' ",

.- _. .. . ;;-:= ..I-Z

~ 30 ~~ :

a _.. ~ .~'C) -...;:: •• - --: •• _.z __ _...3 20 . __. '4 __

o .... ... ... .- __.. .._.

: =~s~·_. -. ..... _.- ..o 10 ~,~~~~~:,~~~,..

o ±tltHH~o:::~ - :r;-40 -30 -20 -10 0 10 20 30

CASE TEMPERATURE <Tcl-oC 92LS-1975Rl

Fig. 14 - DC holding current characteristics for either directionof principal current for T2300 and T2310 series.

u0

•••EI1; 40

H

I-

~cr 30Bcrw 20g<r!Ii 10'"

-20 -to 0CASE TEMPERATURE (T C) - °C 92LS-1974RI

Fig. 13 - DC gate-trigger current characteristics for T2302 andT2312 series.

..EI:z:

H

I-Zw

~a'"zi'j~u0

10

-30 -20 -10 0 10 20 30

CASE TEMPERATURE (T C I _·C 9ZLS-1976RI

Fig. 15 - DC holding current characteristics for either directionof prinicpal current for T2302 and 72312 series.

13 SHADED AREA INDICATES LOCUS OF POSSI SLE TRIGGERING POINTS AT t: : j 11: 1s ,~ VARIOUS TEMPERATURES FOR ALL OPERAT ING MOOES. 1 litI- 4 gTll It~t±ii1t:Uj;i.L~::l::: :1; : ; ! .. l II'" I::: MAXIMUM GATE TRIGGER VOLTAGE FOR ! •• t It- -

w INDICATED JUNCTION TEMPERATURE IT;1.• 1 I'"<l

T;~-40· C rt±t -:-:--;-I l.I- +.,-1-'0 ~:'-t . + ,t,· " r-t- . . t I~;> 3cr 0° C t- I-l-J-.- -+- ~ - ••

~ it:;w'" 7+r~' ++ t :::-'" ---+ t-'- ."' ; i :~I- r ~+25· C ~1 ITIw ; I~ tl- .. T<l 2'"w I;> ..>=<l

'" Iwzcr I . 1 ~0 f;~ ~ t

w ~-;- .. ! JTj ~ 40° C MAXIMUM GATE TRIGGER;> +25· C + ~ o·C it CURRENT FOR INDICATED

>= *tcii ·;twH'CH ~~ IsJUNCTION TEMPERATURE (TJ)

iijMAXIMUM

17~mqm0

"- UNIT WILL TRIGGER FOR Tj :: +90°C

0 2 4 6 10POSITIVE OR NEGATIVE GATE-TRIGGER CURRENT (tGTl - mA(OC)

Fig. 16 - Gate characteristics for T2300 and T2310 series.

MAXIMUM GATE TRIGGER VOLTAGE FORINDICATED JUNCTION TEMPERATURE (Tj)

Tj' 40 C

MAXIMUM GATE TRIGGERCURRENT FOR INDICATEDJUNCTION TEMPERATURE IT;)

MAXIMUM VOLTAGE AT WHICHNO UNIT WILL TRIGGER FORT··+IOO·C

15 20 25 30GATE-TRIGGERING CURRENT IIGT) - mA (DC)

RFI FILTERr-----~l

I LF*RCA ITRIAC I(SEE I CF

TABLE 1 ID I

FOR INDUCTIVE LOADSCONNECT POINTS C' ANDD' TO TERMINALS C ANDD, RESPECTIVELY$, c·11.2K 2W I~/~~

" FOR PHOTOCELL CONTROLCONNECT POINTS A' AND B'TO TERMINALS A AND n,

,RESPECTIVELY ,1B PHOTOCELL 0

0.1 eF200V 400VFOR FOP120V 240V

INPUT INPUT

NOTE: For incandescent lamp loads which produce burnoutcurrent surges with 12t values greater than 2.5 am-pere2 seconds, connect a 10-ohm resistor of appro-priate wattage rating in series with the load. Theappropriate wattage rating can be determined as follows:

AC RFI FILTER RCAINPUT C1 C2 R1 R2 R3 LF * CF* TYPES

VOLTAGE (typ.) hyp.)

120V O.lJJF O.lJJF 100Kn 2.2Kn 15Kn 100JJH O.lJJF TZlOOB ,T231 OB60Hz 200V 100V 1/2W 1/2W 1/2W 200V T2302B ,TZ312B

240V O.lJJF O.lJJF 250Kn 3.3Kn 15Kn 200JJH O.lJJF Z3000 ,T2302D

50Hz 400V 100V lW 1/2W 1/2W 400V Z31OD,T2312D

"The temperature reference point specified should be used whenmaking temperature measurements. A low-mass temperature probeor thermocouple having wire no larger than AWG No. 16should be attached at the temperature reference point.

INCHES MILLIMETERSSYMBOL

MIN. MAX. MIN. MAX.NOTES

00 0.190 0.210 4.83 5.33

A 0.240 0.260 6.10 6.60

ob 0.017 0.021 0.44 0.53

00 0.335 0.366 8.51 9.30

001 0.330 8.13 8.38

h 0.015 0.035 0.38 0.89

i 0.028 0.035 0.71 0.89

k 0.029 0.045 0.74 1.14

I 0.975 1.025 24.76 26.03

P 0.100 2.54

0 1

a 45" NOMINAL

P 50° NOMINAL

r "1' JU=

MOUNTING TAB

(LEAD NO.2 BEHINDMOUNTING TAB)

4 DIMPLED

STANDOFFS

<PP

1nJ,m~,'POINT FOR CASETEMPERA TUREMEASUREMENT·

INCHES MILLIMETERS

SYMBOL MIN MAX MIN MAX. NOTES

A 0630 - 16.000 1.205 1.235 30.61 31.370, 0.775 0.785 19.69 19.93E 0.875 0.905 22.22 22.99F 0.040 0.055 1.02 1.40F, 0.160 0.195 4.06 4.94L 0.920 - 2337 -

0' 0.295 0.305 7.493 7.747

", 0.093 0.095 2.362 2.413N 0.048 0,062 12' 1.57N, 0.998 1.002 25349 25.450 3N, 0687 0.689 1745 17,50 3W 0.048 0.052 1.219 1.320

NOTES:

1. 0.035 C.R.s., finish: electroless nickel plote

2. Recommended hole size for printed-circuit board

is 0 OlD in. (1.78 mm) diD.

·The specified temperature-reference point should be used whenmaking temperature measurements. A low-mass temperatureprobe or thermocouple having wire no larger than AWG No. 26should be attached at the temperature reference point.

Lead No.1 - Main terminal 1Lead No.2 - Gate


Lead No.1 - Main terminal 1Lead No.2 - Gate

Heat Rad., Lead No.3 - Main terminal 2

[J\l(]5LJDSolid StateDivision T2311

Series

2.5-Ampere Sensitive - GateSilicon Triacs

For Low-Voltage Operation - T2301A, T2311A (40766,40767)*For 120-V Line Operation - T2301 B, T2311B (40691,40761)*For 240-V Line Operation - T2301 0, T2311 0 (40692.40762) *-Numbers in parentheses (e.9. 40766) are former ReA type numbers.

Features:• Very High Gate Sensitivity -4 mA

• Shorted Emitter Design

• Heat-Radiator Package for Printed Circuit Board Applications• Small Size - Suitable for Remote Switching Applications

,f '\

RCA T2301- and T2311-series triacs are gate-controlledfull-wave ac switches_ These devices are designed to switchfrom an off-state to an on-state for either polarity of appliedvoltage with positive or negative gate triggering voltages.

The high gate sensitivity of these triacs permits the use ofeconomical transistorized or integrated control circuits andenhances their use in low-power phase control and load-switching applications_

The T2301-series triacs are supplied in a compact package(similar to JEDEC TO-5) and have an RMS on-state currentrating of 2.5 A and repetitive peak off-state voltage ratings of100, 200. and 400 va Its.

The T2311-series triacs are the same as the T2301-seriestriacs. but have factory-attached heat-radiators and areintended for printed-circuit board applications.

With the exception of the characteristics listed below, datashown for the T2300 series in bulletin File No. 470 areapplicable to the T2301 series.

Characteristic LimitsUnits

DC ~Qte-Trigger Current, IGT Mode VMT2 vc; Min. Typ. Max.

For vo •. 12 V roC), I' positive positive - I 4

Rl "30L. and III" negtllive negative - 1 4 mA

TC ·15' C 1- positive negative - 1 4III ~ negative POSitive - 1 4

Data shown for the T2310 series in bulletin File No. 470 areapplicable to the T2311 series.

For data on additional ReA sensitive-gate triaes,refer to bulletin File No. 470.

[IlCIDLJDSolid StateDivision

Thyristors

T2304 T2305Series

400-Hz, 0.5-ASensitive-Gate Silicon TriacsFor Control-Systems Application in Airborne andGround-Support Type Equipment

For 115-V Line Operation - T2304B, T2305B (40769,40771)**For 208-V Line Operation - T2304D, T2305D (40770,40772)**

Features:• High Gate Sensitivity, IGT = 10/40 mA max.• di/dt Capability = 100 A/J.ls• Commutating dv/dt Capability Characterized at 400 Hz• Shorted-Emitter Design

ReA T2304- and T2305-series triacs are gate-controlledfull-wave silicon ac switches. They are designed to switchfrom an off-state to an on·state for either polarity of appliedvoltage with positive or negative gate triggering voltages.

and 208 V RMS sine wave and repetitive peak off-stagevoltages of 200 V and 400 V.

These triacs are intended for operation up to 400 Hz withresistive or inductive loads and nominal line voltages of 115

The high gate sensitivity of these triacs permits the use ofeconomical transistorized or integrated control circuits andenhances their use in low-power phase control and load-switching applications.

MAXJMUM RATINGS, Absolute-Maximum Values:For Operation with Sinusoidal Supply Voltage at Frequencies lip to 400 Hz and with Resistive or Inductive Load.

T2304B T2304DT23051l T2305D

REPETITIVE PEAK OFF-STATE VOLTAGE:'Gate open, TJ = -50 to 1000C

RMS ON-STATE CURRENT (Conduction angle = 3600):Case temperalure (TC) = 900C .Ambient temperature (T A) = 250C, without heat sink ..........•.....For other conditions .

PEAK SURGE (NON-REPETITIVE) ON-STATE CURRENT:For one cycle of applied principal voltage400 Hz (sinusoidal) .60 Hz (sinusoidal) ...........................•..•.....For more than one cycle of applied principal voltage

RATE-OF-CHANGE OF ON-ST ATE CURRENT:VDM = VDROM, IGT = 60 mA, tr = 0.1 "s (See Fig. /4)

PFF~~IGI'~1~},R1G8-~:figURMNT·. . .GATE POWER DISSIPATION:

PEAK (For j I'S max., (See Fig. /0)AVERAGE (At TC = 600C)

(At TA = 25°C, without heat sink)TEMPERATURE RANGE:·

Storage ....Operating (Case)

LEADTEMPERATURE (During soldering):At distances~ 1/16 in. (1.58 mm) from the case for 10 s max .

VDRLJM 200 400 VIT(RMS)

0.5 A0.4 ASee Figs. 3 & 4

ITSM

50 A15 A

See Fig. 5di/dt

100 AIl'SIGTM A

PGM 10 WPG(AV) 0.15 WPG(AV) 0.05 W

Tstg -50 to 150 °cTC -50 to 100 °c

TL 225 °c

* For either polarity of main terminal 2 voltage (VMT2) with reference to main terminal 1.• For either polarity of gate voltage (VG) with reference to main terminal I ...•.Fur temperature measurement reference point, see Dimensional Outline.

ELECTRICAL CHARACTERISTICS

At Maximum Ratings and at Indicated Case Temperature (TC) Unless Otherwise Specified

LIMITS

CHARACTERISTIC SYMBOL T2304 Series T2305 Series UNITS

Min. Typ. Max. Min. Tvo. Max.

Peak Off-State Current:' IDROMGate open, TJ = 100oC, VOROM = Max. rated value 0.2 0.75 0.2 0.75 mA

Maximum On·State Voltage:'VTM

For iT = 10 A (peak), Te = 25°C ......•.......•..... .... 1.7 2.2 1.7 2.2 V

DC Holding Current:'

Gate open, Initial principal current:::: 150 mA IDC). vo = 12 V.

TC = 250e ...................................... IHO 7 15 15 30 mAFor other case temperatures .... ; ...............•. -SeeFi .B&9-

Critical Rate-of-Rise of Commutation Voltage:'

For vD = VDROM, I(T(RMS) = 0.5 A, commutatingdi/dt = 1.8 A/ms, gate unenergized, Te = 900e dv/dt 1 4 1 4 V/ps(See Fig. 151

Critical Rate-of·Rise of Off-Stage Voltage:'For vD = VOROM, exponentail voltage rise. gate open, dv/dt

TC= l000C ........ ......... ...... . .. . ... .... 10 100 10 100 V/ps

DC Gate-Trigger Current:' Mode VMT2 VG

For Vo = 12 V (DC). l+ positive positive 3.5 10 5 25RL =30 n III- negative negative IGT 3.5 10 5 25

mATe = 25°C r positive negative 7 10 10 40

III+ negative positive 7 10 10 40For other case temperatures ... .............. ...... - See FillS. 11 & 12_

DC Gate-Trillller Voltage:.t

11 I 2.2 I 11 I 22ForvD = 12 V (DC), RL = 30n, Te = 250CFor other case temperatures ........... . . . . . . . . .. . . VGT -SeeFig.13- V

ForvO=VOROM, RL = 125n, TC= 100°C 0.15 0.15Gate-Contro"ed Turn-On Time:

(Delay Time + Rise TimeltgtFor vo = VOROM, IGT = 60 mA, tr = 0.1 /JS.

iT = 10 A (peak), TC = 250C (See Fig. 16) I.B 2.5 1.8 2.5 psThennaf Resistance, Junction-to-Case:

................... ......... - .... . ...... IIJ-C B.5 8.5 OC/W, For either polarity of main terminal 2 voltage (VMT2) with reference to main terminal 1.

t For either polarity of gate voltage (V G) with reference to main tenninal 1.

o 0.1 0.2 0.3 0.4 0.5

FULL CYCLE RMS ON-STATE CURRENT [In.M.1l -A9ZCS-17092

@ TRIAC WITH HEAT RADIATOR® ~:~~E~"i\~~TTHitlRC~~~~6© TRIAC WITHOUT HEAT RADIATOR

CURRENT WAVEFORM, SINUSOIDALLOAD, RESiSTIVE OR INDUCTIVECONDUCTION ANGLE: 360-

20o ~ ~ ~ M ~ MFULL CYCLE RMS ON-STATE CURRENT [IT(RMS)] -A 92C5-11094

Fig. 4 - Maximum allowable ambient temperature vs. on-statecurrent for the package/mounting options of these triaes.

r,,~~:::iCiAiSiETEiMiPiEiRiAiTUiREi(iTIC)i'i25ifiCi~1111III!

-k.~0.s f J:='t- t:!~~ ~~~ 04 ~....:>0~~ 0.3 :t:tt:t:!<~~.,~~O.2z-o

0.809 I I.l 1.2

ON - STATE VOLTAGE ( VT) - V(POSITIVE OR NEGATIVE)

o 0.1 0.2 0.3 0.4 0.5

F"ULL CYCLE RMS ON-STATE CURRENT [ITtRMS)] -A92CS-17093

...~~zo

"'"~,t:'2:40~~......er!::'a:~,z 30z •••0"Z••-:>~o 20..~~ 10

SUPPLY FREQUENCY ••60/400 HzLOAD: RESISTIVERMS ON-STATE CURRENT[ITIRMSI]aO.5ACASE TEMPERATURE (Te)· OO·C

4 6 8 10 4 6 8102 4 6 8

103

SURGE CURRENT DURATION - FULL CYCLES92CS-17095

CASE TEMPERATURE {Tel'" 25·C

o I 2. 3

INSTANTANEOUS ON-STATE VOLTAGE IvTl-V(POSITIVE OR NEGATIVE)

100.6 TRIGGERING MODES: All

ENCLOSED AREA INDICATES4 LOCUS OF POSSIBLE

TRIGGERING POINTS.

UPPER U Mil OF PERMISSIBLEAVERAGE (DC) GATE POWERDISSIPATION AT RATEDCONDITION.

0.10.001 2 4 680.01 2 4 680.1

DC GATE TRIGGER CURRENT (IGT)-A(POSITIVE OR NEGATIVE)

-50 -40 -30 -20 -10 0 10 20 30 40 92C5-17101CASE TEMPERATURE (T c) - °C

Fig. 11 - DC gate-trigger current VS. case temperature for T2304 series.

Vo

oJ--- ------ --------I

/--- OlIO'

I

1

I 1

Vo I II Io_LL :_L __I I II I II I II I 1

T-£': I 1'90% POINT

In. I I Io_L_L __ 1-+----

~ '0 --i--l---"I I I1---'" --j

I

f~:VGT I,.....10,"0 POINTo_L -------- -

92CS-13366R2

Fig. 16 - Relationship between off-state voltage, on·state current,and gate·trigger voltage showing reference points fordefinition of turn-on time (tgt).

II1III CO~UTATINGI dv/dt

II

Fig. 15 - Relationship between supply voltage and principal current(inductive load) showing reference points for definition ofcommutating voltage fdv/dtJ.

_r - --..,:t I SNUBBER NETWORKI 500 n ITO BE USEDI 1/2 W I FOR INDUCTIVE

I I~g~~SU~:T~~ENI I VOLTAGE (dv/dt)I J CHARACTERISTICI liS EXCEEDEDI I'1'"'i0.I,...F1fJ200V1

--L J

NOTE: For incandescent lamp loads which produce burnout cur·rent surges with 12t values greater than 2.5 ampere2 seconds, con·nect a 10 - ohm resistor of appropriate power rating in series with theload. This rating can be determined as follows:

Power Rating of _ 210-ohm Resistor - 10 (rms load current)

REFRENCEPOrH FOR CASE

~~'f;~~~T~::T•

~ The temperature reference point specified should be used v.t1enmaking temperature measurements. A low-mass temperature probeor thermocouple having wire no larger than AWGNo. 16 should beattached at the temperature reference point.


MIN. MAX. MIN. MAX.

¢o .190 .210 4.83 5.33A .240 .260 6.10 6.60¢b .017 .021 .44 .53¢O .335 .366 8.51 9.30

¢Ol .330 8.13 8.38h .015 .035 .38 .89i .028 .035 .71 .89k .029 .045 .74 1.14

I .975 1.025 24.76 26.03P .100 2.54Q 1a. 450 NOMINALf3 500 NOMINAL

Lead No.1 - Main terminal 1

Lead No.2 - Gate


On special request, these triacs are also available with afactory·attached heat-radiator intended for printed·circuitboard applications.

OOCD5LJ1]Solid StateDivision

T2306T2316T2606T2706

ThyristorsT4107 T6406T4116 T6407T4117 T6416T4706 T6417

Series

T2806T2616T2716T4106

These triacs are gate-controlled full-wave ac switches. Theyare intended for ac load-control applications such as heatingcontrols (proportional or on-off); lamp switching, motorswitching, and a wide variety of power-control applications.

The RCA CA3058, CA3059, and CA3079 are monolithicsilicon IC zero-voltage switches designed for direct operationfrom the ac line. They can drive the triac gate directly andprovide the gating signal at zero voltage crossings forminimum radio-frequency interference.

These triacs have gate characteristics which assure that thezero-voltage switch can supply sufficient drive current totrigger them over the operating-temperature range from_40°C to +85°C. Ratings within this group of triacs rangefrom 2.5 to 40 amperes rms on-state current, with repetitiveoff-state voltages available from 100 to 600 volts; and theyemploy a wide variety of packages.

RATINGS AND CHARACTERISTICS

2.5-40-A, 100-600-V SILICONTRIACS DESIGNED FOR USEWITH IC ZERO-VOLTAGESWITCHES ASTRIGGERING CIRCUITSFor Power-Control and Switching Applicationsat Frequencies of 50 to 60 Hz

IFor

Rep. Peak RMS On-State Typ. DC Max. DC Gate Trigger Current Additional

Type Former Off·State Current Holding and Voltage at 25°C· Data.

No. RCA Voltage 'T(RMS) Current at 1+ 111+ Package Refer to

Type VDROM at Case Temp. 250C, IHO I IGT VGT IGT VGT Bulletin

No. (VI (A) (OCI (mAl I (mAl (V) (mAl (V) File No.*

T2316A 40693 100 2.5 70 6 I 45 1.5 45 1.5 Mod. TO-5 on 414

! Heat Radiator

T2316B 40694 200 2.5 70 6 45 1.5 45 1.5 " 414

T2316D 40695 400 25 70 6 45

I15 45 1.5 " 414

T2306A 40696 100 25 70 6 45 1 5 45 1.5 Mod. TO-5 414

T2306B 40697 200 ,2 5 70 6 45 r 1 5 45 1.5 " 414__ .·0 _____ • ---- - -t --------------- ---- -------- ----- _.-

IT2306D 40698 400 I 25 70 6 45 15 45 1.5 Mod. TO-5 414

T6406B 40699 200 , 40 70 25 45

I1.5 45 1.5 Press-fit 593 I

T6406D 40700 400 40 70 25 45 1.5 45 1.5 " 593

T6406M I 40701 600 I 40 70 25 45 1.5 45 1.5 " 593

T6416B I 40702 200,

40 65 25 45 1.5 45 1.5 Stud 593I

T6416D 140703 400 I 40 65 25 45 1.5 45 1.5 Stud 593

T64i6M 140704 600 I 40 65 25 45 1.5 45

I1.5 " 593

T6407B 40705 200 i 30 65 25 45 1.5 45 1.5 Press-fit 459! ,

T6407D I 40706 400 I 30 65 25 45 1.5 45 I 1.5 " 459

T6417B 40707 200 30 60 25 45 1.5 45 i 1.5 Stud 459

T6417D 140708 400 30 60 25 45 1.5 45 I 1.5 Stud 459;

459T6407M I 40709 600 30 65 25 45 1.5 45 1.5 Press-fitT6417M I 40710

I600 30 60 25 45 i 1.5 45 1.5 Stud 459

T4106B \40711 200 15 80 20 45 I 1.5 45 I 1.5 Press-fit 458

i T4106D 40712 400 i 15 80 20 45 1.5 45 1.5 " 458

ForRep. Peak RMS On-State Typ. DC Max. DC Gate Trigger Current Additionel

Type Former Off-State Current Holding and Volta! at 250c4 Data,No. RCA Voltage IT(RMS) Current at 1+ 111+ Package Refer to

Type VDROM at Case Tamp. 25OC,IHO IGT VGT IGT VGT BulletinNo. (V) (A) (OCI (mA) (mA) (V) (mA) IV) File No.-

T4116B 40713 200 15 80 20 45 1.5 45 1.5 Stud 458T4116D 40714 400 15 80 20 45 1.5 45 1.5 .. 458T4706B 40715 200 15 70 15 45 1.5 45 1.5 TO-66 300T4706D 40716 400 15 70 15 45 1.5 45 1.5 .. 300T4107B 40717 200 10 85 15 45 1.5 45 1.5 Press·fit 457

T4107D 40718 400 10 85 15 45 1.5 45 1.5 Press~fit 457T4117B 40719 200 10 85 15 45 1.5 45 1.5 Stud 457T4117D 40720 400 10 85 15 45 1.5 45 1.5 .. 457T2806B 40721 200 8 80 15 45 1.5 45 1.5 Plastic 364T2806D 40722 400 8 80 15 45 1.5 45 1.5 .. 364

T2706B 40727 200 6 75 15 45 1.5 45 1.5 TQ-66 351

T2706D 40728 400 6 75 15 45 1.5 45 1.5 TO-66 351

T2716B 40729 200 6 75 15 45 1.5 45 1.5 TO-56 with 351Heat Radiator

T2716D 40730 400 6 75 15 45 1.5 45 1.5 .. 351I

& A triac driven directly from the output terminal of the CA3058. CA3059. and CA3079 should be characterized for operation in the 1+ or 111+triggering modes, i.e., with positive gate current (current flows into the gate for both polarities of the applied ae voltage).

.•• Except for gate characteristics, data in these bulletins also apply to the types listed in this chart.

Technical information on RCA-CA3058. CA3059. and CA3079 iscontained in bulletin File No. 490.

For detailed application information, see Application Note leAN·

6182, "Features and Application of RCA Integrated·Circuit Zero·

Voltage Switches ".

OOm5LJDSolid StateDivision T2500B

T2500D

Three-Lead Plastic Types forPower-Control and Power-Switching Applications

For 120-V Line Operation T2500B (41014)tFor 240-V Line Operation T2500D (41015)t

Features:• 60-A Peak Surge Full-Cycle Current Ratings

• Shorted· Emitter, Center-Gate Design

• Low Switchi ng Losses

• Low Thermal Resistance

• PackageDesign Facilitates Mounting on a Printed-Circuit Board

Types T2500B and T2500D* are gate·controlled full-wavesilicon triacs utilizing a plastic case with three leads tofacilitate mounting on printed·circuit boards. They areintended for the control of ac loads in such applications asmotor controls, heating controls, relay replacement, solenoiddrivers, static switching, and power·switching systems.

These devices are designed to switch from an off-state to anon-state for either polarity of applied voltage with positive or

negative gate triggering voltages. They have an on·state cur·rent rating of 6 amperes at a Te of sooe and repetitive off-state voltage ratings of 200 volts and 400 volts, respectively.

The unique plastic package design provides not only ease ofmounting but also low terminal impedance, which allowsoperation at high case temperatures and permits reducedheat·sink size.• Formerly RCA Dev.Nos.TA8504 andTA8505.

MAXIMUM RATINGS, AbsoJute·Maximum Values:For Operation with Sinusoidal Supply Voltage at Frequencies up to 50160 Hz and with Resistive or Inductive Load,

REPETITIVEPEAK OFF-STATEVOLTAGE:· T2500B T2500DGateopen,TJ = -65 to 100°C VDROM 200 400 V

RMSON·STATECURRENT IConductionangle= 360°)·Case temperature ITI R~.•1Sl

TC=800C 6---- AFor other conditions -- See Fig. 3 ---

PEAKSURGEINON-REPETITlVE)ON-STATECURRENT:For one cycle of applied principal voltage

60 Hz (sinusoidal).50 Hz (sinusoidal)

For more than one cycle of applied principal voltage

PEAK GATE·TRIGGERCURRENT:·For 10 IJ.smax; see Fig. 10

GATE POWERDISSIPATION:Peak (For 1 JjS max.,lGTM -:;4 A; see Fig. 10)AVERAGE

TEMPERATURERANGE:'StorageOperating (Casel

TERMINAL TEMPERATUREIDuring solderingl:For 10 s max. (terminals and case)

___ 60 ____ 50 _

-- See Fig. 4 ---

PGM 16 _

PGIAV)--- 02 _

Tstg -65 to 150 __TC -65 to 100 __

• For either polarity of main terminal 2 voltage (VMT2) with reference to main terminal 1• For either polarity of gate voltage (V G) with reference to main terminal 1..•. For temperature measurement reference poif't, se~ Dimensional Outline.

ELECTRICAL CHARACTERISTICS at Maximum Ratings unless otherwise specified, and atindicated Case Temperatll'e (T cl

LIMITS

CHARACTERISTIC SYMBOL T2500B T2500D UNITSMIN. TYP. MAX. MIN. TYP. MAX.

Peak Off-State Current:*Gate Open, VOROM = Max. rated value IOROM - 0.1 2 - 0.1 2 mA

At TJ = 100°C .............................

Maximum On-State Voltage:* vTM - 1.7 2 - 1.7 2 VFor iT = 30 A (peak) and TC = 25 °C ...............

DC Holding Current:*Gate Open

mAInitial principal current = 150 mA (de) IHOAt TC = 25°C .•..•........................ - 15 30 - 15 30For other case temperatures .....•.......•....... See Fig. 8.

Critical Rate of Rise of Commutation Voltage:*·For vO = VOROM. IT(RMS) = 6 A. Commutating dv!dt V!/-,s

dildt = 3.2 Alms. and gate unenergizedAt TC = BOoC .............................. 4 10 - 4 10 -

Critical Rate of Rise of Off-State Voltage:*For vd = VDROM exponential voltage rise, and gate open

At T C = 10006 ........................... dv!dt 100 300 - 75 250 - V!/-,s

For other case temperatures .................... See Fig.9

DC Gate· Trigger Current:* tFor VD = 12V (de), RL = 12 \)

T C = 25°C, and specified triggering mode:r+ Mode (VMT2 positive, VG positive) ............... - 10 25 - 10 25m- Mode (VMT2 negative, VG negative) .....•....... IGT - 15 25 - 15 25 mA

I- Mode (VMT2 positive, VG negative) ...........•... - 20 60 - 20 60m+ Mode (VMT2 negative, VG positive) ....•........ - 30 60 - 30 60For other case temperatures ....................... - See Figs. 12 and 13_

DC Gate· Trigger Voltage:* tFor VD = 12V (de) and RL = 1211

At TC = 25°C .....................•....... - 1.25 2.5 - 1.25 2.5F or other case temperatures ..................... VGT See Fig. 14.

V

For VD = VDROM and RL = 125 \)At TC = 100°C ............................ 0.2 - - 0.2 - -

Gate-Controlled Turn-On Time (Oelav Time + Rise Time):ForvO = VOROM,IGT = 160 mA, rise

tgt - 1.6 2.5 - 1.6 2.5 /-,stime = 0.1 IJS, and iT = lOA (peak)

At TC = 250C (See Fig.15.l ...................

Thermal Resistance:J unction-to-Case ............................. ROJC - - 2.7 - - 2.7 °C!W

J uncti on·to-Ambi ent .................... , ...... ROJA - - 60 - - 60 °C!W

*FOl either polarity of main terminal 2 voltage (VMT2) with reference to main terminal 1.

tFor either polarity of gate voltage (VG) with reference to main terminal 1.

.Variants of these devices having dV/dt characteristics selected specifically for inductive loads are available onspecial order; for additional information, contact your ReA Representative or your ReA Distributor.

CURRENT WAVEFORM: SINUSOIDALLOAD: RESISTIVE OR INDUCTIVE

CONDUCTION ANGLE: 360·

CASE TEMPERATURE: MEASURED ASSHOWN ON DIMENSIONAL OUTLINE

2 4 6 8 to 12

RMS ON-STATE CURRENT [IT(RMS~-A

92C5-20961

II!III CO~UT ATINGI dv/dt

II

o 2 4 6 8 10 12 14

FULL-CYCLE RMS ON-STATE CURRENT [I T{RMSJ-A

92C5-20960

SUPPLY FREQuENCY: 50/60 Hz SINE WAVELOAD: RESISTIVECASE TEMPERATURE (TCl : 800 C

-'" RMS ON-STATE CURRENT [ITIRMSlr ~ 6 Aw 1100>- LTE CUTROL IMAy B~ Lbs+f: ~........ DURING AND IMMEDIATELY~ ~ 80 FOLLOWING SURGE CURRENTw •... INTERVAL<rZ CNERLOAD MAY NOT BE RE-,Wz<r PEATED UNTIL JUNCTION

~ ~ 60 TEMPERATURE HAS RETURNED_u

~~Iy,

TO STEADY-STATEw w RATED VALUE.., ....<r '"~ ~40 '" '"~ z _50",~~O ~20 :---

02 4 • 8 2 4 • 8 2 4 • 8

Fig. 4-Peak surge on-state current vs. surge current duration.tgt: td + t.

II I

Vo i I

o-LL---J----I 1

I 1

I I:£1.t: I ..•••..90% POINT

ITM I 1 I

o-l~--- I-l---j--'d+t--t,

~t •• ----iI-.--t-7

VGT :

L I :.--10% POINT

0- --------Fig. 6-0scillascape display for measurement of gate--contralled

turn-on time rtgrl.

o 0.5 1.5 2 2.5

POSITIVE OR NEGATIVE INSTANTANEOUS ON-STATE VOLTAGE (vT)-V92CS-15021RI

RFI FILTERr------l

I LF-RCA ITRIAC I(SEE I CF

TABLE) Io I

2

0.1

4 6 80.01 6 80.1 6 81.0

POSITIVE OR NEGATIVE DC GATE-TRIGGER CURRENT (lGT)-A92SS-3785R2

1.$: 2W R, Cf' ~?~i;~~!~~TL~SO~O~~~112 W 0, RESPECTIVELY

" FOR PHOTOCELL CONTROLCONNECT POINTS A' AND B'TO TERMINALS A AND B,RESPECTIVELY Cs ,1

B' PHOTOCELL 0120v 240V

" ", ~'~ ""INPUT 0, 0, ", ", TVPE$VOLTAGt (,~". (,~".,~" 0.1 ~f ~~~:lOOK" 11KlI 15K" l00~H 0, ~f ,-~", ~" ~""'" ~~:o 1 ~F :1&1"," J.JKll 15",U ~." ~~~:,~~"' """ ,W ,W

,~" 0, ~f 0.1 ~f :100"'11 JJKlI '5",U ~." ~~:,~~"' ~" ,~" , W ,W

Fig. 11 - Typical phase-control circuit for lamp dimming, heatcontrols, and universal motor speed controls.

Fig. 12-DC gate-trigger current ((or ,+ and 11/- triggeringmodes) vs. case temperature.

-'>;il,,-;:.<r c>~>z~0:0:~~ I

~gwg

Fig. 13-DC gate-trigger current ((or /- and ///+ triggeringmodes) vs. temperature.

'50 100 1'50 200 2'50 3'50DC GATE-TRIGGER CURRENT IIGT)-mA

92CS-17062

i- Fig. 15-Typica/ turn-on time vs. gate-triggercurrenr.SCREW,632NO' .••.V .••.'L .•..SLEfRQt.ORC.•..

~NR231A

~

RECTANGULAR METALWASHER

::::;.::~::~,;~"'"". - DF103B

Q~~CL~I~I~U:~T~~O'141,n

e ~~~';~~';:':~V'CE6>0-6e (~~:~S~~7K

495334·7INSULATING BUSHING

S-- ~~O~~·6~'~·I~.OOmml

METAL WASHER ®} ~~~~:~'~'~?~E:~~MAX.

LOCK WASHER @HEX NUT @ NOT .••.V.•..'L .•..SLEfRQMRC... 92'C$-22563

SOLDER LUG ..ffl) In the United Kingdom, Europe, MIddle East, and Africa, mounting'~ hardware policies may dIffer, check the availabilIty of all Items

HEX NUT @ shown with your ReA salesrepresentative or supplier

DIMENSIONAL OUTLINEJEDEC TO-220AB

INCHES MILLIMETERS

SYMBOL MIN. MAX. MIN. MAX.

A 0.160 0190 407 4.82h 0025 0040 064 1.02h, 00'2 0020 03' 0.51

h2 0,045 0055 1143 1397D 0.575 0600 14.61 15.24

E 0.395 0410 10.04 10.41

E, 0365 0.385 928 9.77E2 0300 0.320 7.62 8'2, 0.180 0.220 4.57 5.58

" 0.080 0.'20 2.03 304F 0020 0.055 051 1.39H 0235 0265 5.97 6.73L 0.500 '2.70 -L1 0.250 - 635oP 0.141 0,145 3.582 3.683D 0.040 0.060 1.02 1.52Z 0.100 0120 2.54 3.04

CHAMPFER

~L==OPTIONAL '/'

SEATlNGPlANE ~ JII

F TEMPERATUREMEASUREMENTPOINT

Lead No.1-Main Terminal 1Lead No.2-Main Terminal 2Lead No.3-Gate

Mounting Flange-Main Terminal 2

When incorporating ReA Solid State Devices In equipment, It IS

recommended that the designer refer to "Operating Considerations for

ReA Solid State Devices", Form No.1 CE-402, available on request

from ReA Solid State DiVision, 60x 3200. Somerville. N.J. 08876.

OOill5LlDSolid StateDivision

MainTerminal 22N54412N54422N5443T6400NPress-fit

MainTerminal 22N54442N54452N5446T6410NStud

MainTerminal 2T6420SeriesIsolated-Stud

Thyristors2N5441 2N5442 2N54432N5444 2N5445 2N5446

T6400 T6410 T6420 Series

For 120-V Line Operation 2N5441, 2N5444, T6420B (40688)tFor 240-V Line Operation 2N5442, 2N5445, T6420D (40689)tFor High-Voltage Operation .. 2N5443, 2N5446, T6420M (40690)t

T6400N,T6410N,T6420N(40925, 40926, 40927)t

Features:• dildt Capability = 100 Alps• Shorted-Emitter, Center-Gate Design• Low Switching Losses

• Low On-State Voltage atHigh Current Levels


ReA triacs are gate-controlled, full-wave silicon ac switches.They are designed to switch from an off-state to an on·state

for either polarity of applied voltage with positive or negativegate·triggering voltages.

MAXIMUM RATINGS, Absolute-Maximum Values:For Operation with Sinusoidal Supply Voltage at Frequenciesup to 50160 Hz and with Resistive or Inductive Load.

"REPETITIVE PEAK OFF·STATE VOLTAGE:·Gate open, TJ =-65 to 110"C ...............•.

RMS ON·STATE CURRENT (Conduction angle = 360"):Case temperature

TC 70"C IPress-fit types) .................•.= 65·C IStud tYpes) .== 60°C (Isolated-stud types) .

For other conditions .

PEAK SURGE INON-REPETITIVE) ON-STATE CURRENT:For one cycle of applied principal voltage

60 Hz (sinusoidal)50 Hz (sinusoidal)


RATE OF CHANGE OF ON-STATE CURRENT:VOM = VOROM,IGT = 200 mA, tr = 0.1, •• ISee Fig.

FUSING CURRENT (for Triac Protection):TJ = -65 to 110·C. t = 1.25 to 10 ms ........•.

"PEAK GATE-TRIGGER CURRENT:·For 1 JlS max., See Fig. 7

"GATE POWER DISSIPATION:PEAK IFor 10/,s max .. IGTM<;; 4 A, See Fig. 7) ..........•..AVERAGE ... . ..............•.

"TEMPERATURE RANGE:~StorageOperating (Case) .

"TERMINAL TEMPERATURE lOuring soldering):For 105 max. (terminals and casel .

2N5441

2N5444

T6420B

2N5442

2N5445

T6420D

2N5443

2N5446

T6420M

T6400N

T6410N

T6420N

400 600 800 V

40 A40 A40 A

See Fig. 3

300 A265 A

See Fig. 4

100 AI/,s

350 A2s

12 A

40 W0.75 W

65 to 150 ·C65 to 110 ·C

225 ·C

ELECTRICAL CHARACTERISTICSAt Maximum Ratings Unless Otherwise Specified and at Indicated Case Temperature (T C)

LIMITS

FOR ALL TYPESCHARACTERISTIC SYMBOL UNLESS OTHERWISE UNITS

SPECIFIEO

MIN. TYP. MAX.

Peak Off·State Current:'Gate open, TJ = 110°C, VDROM = Max. rated value. IDROM - 0.2 4" mA

Maximum On·State Voltage:'For iT = 100 A (peak), TC = 25°C ....... ....... . ... - 1.7 2

VFor iT = 56 A (peak), TC = 25°C ........ .... VTM - 1.5 1.85"

DC Holding Current:'Gate open, Initial principal current = 500 mA (del, vD = 12V,

TC = 25°C - 25 60TC = -65°C. IHO - - 100" mAFor other case temperatures .... See Fig. 6

Critical Rate of Rise of Commutation Voltage:'For Vo = VDROM' 'TIRMSI = 40 A, commutatingdi/dt = 22 A/ms. gate unenergized. (See Fig. 141,

TC = 70°C (Press-fit types) .................... 5" 30 -= 6SoC (Stud types) ..................... dv/dt 5" 30 - v/p.s= 6CtC (Isolated-stud types) ............ .. ... 5 30 -

Critical Rate of Rise of Off-State Voltage:'For Vo = VOROM' exponential voltage rise, gate open.TC = 110°C'

2NS441, 2NS444, T6420B •••••••••••••••••••••• 50" 200 -2NS442. 2NS44S. T6420D ••••••••••••••••••.•.• dv/dt 30" '50 - V/~s2NS443, 2NS446. T6420M ••••••••••••••••••••• 20" 100 -T6400N. T6410N, T6420N •••••••••••••••••••.• 10 75 -

DC Gate-Trigger Current:'· Mode VMT2 VGFor vQ = 12 V (del 1+ positive positive - 15 50

RL = 30n IW negative negative - 20 50TC = 25°C 1- positive negative - 30 80

111+ negative positive - 40 80

IGT mAMode VMT2 VG

For Vo = 12 V (del 1+ positive positive - - 125"RL = 30n IW negative negative - - 125"TC = -65°C ,- positive negative - - 240'

111+ negative positive - - 240"For other case temperatures ...... See Figs. 8& 9

DC Gate-Trigger Voltage:'·For Vo = 12 V (del, RL = 30 n,

TC = 25°C ............................ ...... - 1.35 2.5= _65°C VGT - 1.8 3.4" V

For other case temperatures ............... See Fig. 10For Vo = VDROM' RL = 12Sn.TC = lHt'C 0.2 - -

Gate-Controlled Turn-On Time:(Delay Time + Rise Time)For Vo = VDROM' IGT = 200 mA, tr = 0.1 jJ.S,

iT = 60 A (peak). T C = 2SoC (See Figs. 11 & 151 . . . . . . . tgt - 1.7 3 ~s

Thermal Resistance, Junction-ta-Case:Steady-State

Press-fit types ................... .. . ...... - - 0.8"Stud types ........ .............. ..... .. .......

ROJC- - O.g"

°C/WIsolated--stud types .. . ........ ...... . .... - - 1

Transient (Press-fit & stud types) See Fig. 12.

In accordance with JEDEC registration data format (JS-14, RDF 2) filed for the JEDEC (2N-Series) types .

• For either polarity of main terminal 2 voltage (VMT2) with reference to main terminal 1.

• For either polarity of gate voltage (VG) with reference to main terminal 1.

QUADRANTNO'


ONSTATErHO

QUADRANT00111

MAIN TERMINAL 2 ONNEGATIVE STATE _ I

CURRENT WAVEFORM: SINUSOIDALLOAO: RESISTIVE OR INDUCTIVE

~~~~UC;~~~ER~~~~~: ~M~~~~REO AS :-SHOWN ON DIMENSIONAL OUTLINES

110

':~i:••..•.•.;,: '!~i.~t~i~;_~...... _ .. "' .. ;:;-. ; =t:':" .

.. Z-'·- ._ .. ,._L ' : .

.. .;; .. ;;; ~: ::--:::.:::1?':€... :: ;-":. .:.. :::::'::

20;: .• ;.;/; 'I[.

I 2 3INSTANTANEOUS ON- STATE VOLTAGE tVTI - V

tPOSITtVE OR NEGATIVE} 92LS-22~A2

~I~~,~

<5<r

~:?w

10'""<rw

" () 20 30 40 ~O 60

FULL -CYCLE RMS ON-STATE CURRENT(IHRMS1]-A92LS-2256RI

GATE CONTROL MAY BE LOSTDURING AND IMMEDIATELY FOLLOWINGSURGE CURRENT INTERVAL.

OVERLOAD MAY NOT BE REPEATEDUNTIL JUNCTtON TEMPERATURE HASRETURNED TO STEADY-STATERATED VALUE.

I 10" 6. 102

SURGE CURRENT DURATION -FULL CYCLES

20-10 -60 -50-40 -30 -20 -10 0 10 20 30 40

CASE TEMPERATURE (TC )_·C

MINIMUM GATE RESISTANCE• t I I I I

UPPER LIMIT OF PERMISSIBLEAVERAGE lOCl GATE POWER 'DISSIPATION AT RATED CONDITIONS

Fig.7-Gate-trigger characteristics and limit-ing conditions for determination ofpermissable gate-trigger pulses.

o-70 -60 -50 -40 -30 -20 -10 0 to 20 30 40

CASE TEMPERATURE tTe }_·C

50 100 150 200 250 300 350

DC GATE-TRIGGER CURRENT llGT1-mA

o-70 -60 -50 -40 -30 -20 -10 0 10 20 30 40

CASE TEMPERATURE ITC I-·C

~ III Dlj I i I ,;! '00 Iii i !J- 1"

"'~~~ I I , /,-' 80 71,." , ,0,"~~ iA

60 V,~'" "I0:11

0-'-' ./ :1 I Iz,"'0 40,'-'0- '1'~~"0 I--' I I

i20

II I ; I I

0 111 i II I 1"468 468 468

10-3 10-2 10-1 ITIME AFTER APPLICATION OF RECTANGULAR POWER PULSE - SECONDS

92LS-2263A1

Vo

oJ--------------- --

32C5·17063

Fig. 13-Rate of change of on-state currentwith time (defining dildtl.

II I

Vo : I

o-LL----:----I I1 II IiLl.j: I I' 90% POINT

ITM I I

0-1.~--- I-l---:-- t d --t-+-- I,

~tot---iI-,--t-;

VGT :

L t ,..-100/0 POINT

0- - --------'32LS-2410R2

Fig. 14-Relationship between supply vOltageand principal current (inductiveload) showing reference points fordefinition of commutating voltagefdv/d'i.

Fig. 15-Relationship between off-state vol-rage, on-state current. and gate-trigger voltage showing referencepoints for definition of rum-ontime (fgt).

AC INPUT 120V 240V 240VVOLTAGE 60Hz 60Hz 50Hz

C, O.ljJF O.ljJF O.ljJF

'OOV 400V 400V

C, O.l..,F O.lIJF O.lj.jF

lOQV tOOV lOCV

Rt 100KU 200KIl 250Kntf2W tW 'w

R, 22KH 3.JKf! 3.3K11'f2W tf2W tf2W

R3 15KH 15KH 15KH

'f2W tf2W 1/ZW

SNUBBER 0.18· O.lS- 0.18·NETWORK Cs O.22).JF O.22j.lF O.22jJF

FOR 40-A 'OOV 400V 400V

(RMSI-IN· 330· 330· 330·DUCTIVE RS 390H 390" 390ULOAD tf2W lf2W tf2W

RFI CFO.lIJF O.lIJF O.lIJF

FILTER'OOV 400V 400V

IF 100J,lH 200J,lH 200IJH

2N5441 2N5442 2N5442

RCA TRIACS 2N5444 2N5445 2N5445

T6420B T64200 T64100

,RCA ITRIAC I RS(SEE ITABLE)I

I,, Cs,,Lf_-..J L J

SNUBBER NETWO~j( I'OR INDUCTIVELOADS OR WHEN COMMUTATING VOLTAGEldv/dlJ CHARACTERISTIC 15 EXCEEDED.

MOUNTING CONSIDERATIONS

Mounting of press-fit package types depends upon an inter-ference fit between the thyristor case and the heat sink. Asthe thyristor is forced into the heat-sink hole, metal fromthe heat sink flows into the knurl voids of the thyristor case.The resulting close contact between the heat sink and thethyristor case assures low thermal and electrical resistances.

A recommended mounting method, shown in Fig. 17, showspress-fit knurl and heat-sink hole dimensions. If these dimen-sions are maintained, a "worst-case" cond it ion of 0.0085 in(0.2159 mm) interference fit will allow press-fit insertionbelow the maximum allowable insertion force of 800 pounds.A slight chamfer in the heat-sink hole will help center and

Type of Mounting ThermalPackage Employed Resistance-oeM

Press-fitted into heat sink. Mini-mum required thickness of heat 0.5sink = t/8 in 13.17 mml

Press-Fit Soldered directly to heat sink.(6040 solder which has a melt-ing point of 1880 C should be 0.1 to 0.35used. Heatin~ time should besufficient to cause solder to flowfreely).

Directly mounted on heat sink

IStud with or without the use of heat- 0.6sink compound.

guide the press-fit package properly into the heat sink. Theinsertion tool should be a hollow shaft having an innerdiameter of 0.380 ± 0.010 in. (9.65 ± 0.254 mm) and anouter diameter of 0.500 in. (12.70 mm). These dimensionsprovide sufficient clearance for the leads and assure that nodirect force will be applied to the glass seal of the thyristor.

The press-fit package is not restricted to a single mountingarrangement; direct soldering and the use of epoxy adhesiveshave been successfully employed. The press-fit case is tin-plated to facilitate direct soldering to the heat sink. A 60·40solder should be used and heat should be applied only longenough to allow the solder to flow freely.

In the United Kingdom, Europe, Middle East, and Africa, mounting-hardware policies may differ; check the availability of all itemsshown with your ReA sales representative or supplier.

DIMENSIONAL OUTLINE FOR TYPES2N5441, 2N5442, 2N5443, T6400N

PRESS-FIT

INSULATINGMATERIALl TERMINAL

NO.1

@\l.-- .0

TERMINAL NO.2

REFERENCE TERMINAL NO.3POINT FOR CASETEMPERATUREMEASUREMENT

DIMENSIONAL OUTLINE FOR TYPES2N5444, 2N5445, 2N5446, T641 ONSTUD

.0,E

TERMINAL NO.2

REFERENCEPOINT FOR CASETEMPERATURE

1 MEASUREMENT

J'" SEATING PLANE

DIMENSIONAL OUTLINE FORT6420 SERIESISOLATED-STUD

NO.1-GateNo.2-Main Terminal 1

Case, NO.3-Main Terminal 2

INCHES MI LLiMETERSSYMBOL NOTES

MIN. MAX. MIN. MAX.

A - 0.380 - 9.65<l>D 0.501 0.510 12.73 12.95<l>D1 - 0.505 - 12.83 2<l>D2 0.465 0.475 11.81 12.07J 0.825 1.000 20.95 25.40M 0.215 0.225 5.46 5.71 1<l>T 0.058 0.068 1.47 1.73<l>T, 0.138 0.148 3.51 3.75

NOTES:1. Contour and angular orientation of these terminals is optional.

2. Outer diameter of knurled surface.

INCHES MI LLiMETERSSYMBOL NOTES

MIN. MAX. MIN. MAX.

A 0.330 0.505 8.4 12.8 -<l>D1 - 0.544 - 13.81 -E 0.544 0.562 13.82 14.28 -F 0.113 0.200 2.87 5.08 3J 0.950 1.100 24.13 27.94 -M 0.215 0.225 5.46 5.71 1N 0.422 0.453 10.72 11.50 -<l>T 0.058 0.068 1.47 1.73 -<l>T, 0.138 0.148 3.51 3.75 -¢W %-28 UNF·2A Y.·28 UNF-2A 2

NOTES:1. Contour and angular orientation of these terminals is optional.

2. Pitch diameter of \4·28 UNF-2A (coated) threads (ASA B1. 1-1960).

3. A chamfer or undercut on one or both ends of hexagonal pOrtion

is optional.


MIN. MAX. MIN. MAX.

A - 0.673 - 17.09<l>D 0.604 0.614 15.34 15.59<l>D1 0.501 .0.505 12.72 12.82E 0.551 0.557 13.99 14.14F 0.100 0.110 2.54 2.79J - 1.298 - 32.96M 0.210 0.230 5.33 5.84M, 0.200 0.210 5.08 5.33N 0.422 0.452 10.72 11.48

<l>T 0.058 0.068 1.47 1.73 2<l>T1 0.138 0.148 3.51 3.75 2<l>T2 0.138 0.148 3.51 3.75 2<l>W %-28 UNF·2A %-28 UNF·2A 3

NOTES:

1. Ceramic between hex (stud) and terminal No.3 is beryllium oxide.

2. Contour and angular orientation of these terminals is optional.

3. Pitch diameter of %·28 UNF·2A (coated) threads (ASA B1. 1-1960).

OOm5LlDSolid StateDivision T2710

Series

RCA T2700- and T2710-series devices are gate-controlledfull-wave silicon triacs. They are intended for the control ofac loads in applications such as heating controls, motorcontrols, light dimmers, and power switching systems.

These triacs are designed to switch from an off-state to anon-state condition for either polarity of applied voltage withpositive or negative triggering voltages to the gate.

T2700B and T2700D are hermetically sealed types having anon-state current rating of 6 amperes at a case temperature of+75°C and repetitive off-state voltage ratings of 200 voltsand 400 volts, respectively.

These devices are also available with integral heat radiators,as T2710B and T2710D, respectively.

Maximum Ratings, Absolute-Maximum Values:For Oprratioll with Sinusoidal Supply Voltage at Fre-qll(,~lcies of 50/fjO Hz. and 1(,;tll Rcsistirc or lndllctirc Load

REPETITIVE PEAK OFF-STATEVOLTAGE., VDROM:

Gate Open,ForTJ=-65to+1000C 200

RMS ON-STATE CURRENT, IHrms):

For case temperature (Tel of +75 °C ..and a conduction angle of 3600 .•....

For ambient temperatures (T A) up to+ 100°C and a conduction angle of 360°

PEAK SURGE (NON-REPETITIVE)ON-STATE CURRENT, 'TSM:

For one cycle of appliedprincipal voltage .

For more than one full cycle ofapplied voltage. . . . . . . . . . . . . . . .. See Fig. 4.

PEAK GATE-TRIGGER CURRENT· ,'Gnt'For 1 }.L s max. 4

GATE POWER DISSIPATION:.PEAK, P

GMFor 1 f.L s max. and'GTM f, 4 A (peak), . 16

AVERAGE, PG(AV) ....

TEMPERATURE RANGE+:Storage .Operating (case) .

-65 to + 150°C-65 to + 100 °c

6-Ampere Silicon TriacsMedium-Power, Gate-Controlled,Full-Wave Types

/''." -H-1470AJEDEC TQ-66

With Integral Heat RadiatorT2710 Series

Features

• nO-Watt Control I T2700B (40429)*120-Volt Line Operation \ T2710B (40502)*

• 1,440-Watt Control I T2700D (40430)*240-Volt Line Operation \ T2710D (40503)*

• 6-A (rms) On-State Current Ratings

• 100-A Peak Surge Full-Cycle Current Ratings

• Shorted-Emitter Design-- contains internally diffused resistor from gate to

Main Terminal No.1.

• Center Gate Construction-- provides rapid uniform gate current spreading for

faster turn-on with substantially reduced heatingeffects

• Low Switching Losses


• Numbers in parentheses(e.g. 40429) are formerReA type numbers.

'~~~r~i~g~\go~~\i~Yt~:mTna~r{~rminal 2 voltage (VMT2) with

.For either. polarity of gate voltage(VGT) with reference to .For information on the reference point of temperature me8sure-maIn termmal 1. menl, see Dimensional Gutl ine.

LIMITSCHARACTERISTIC SYMBOL T2700B T2710B T27000 T27100 UNITS

Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.

Peak Off-State Current:"Gate Open 10ROM - 0.1 4 - 0.1 1.2 - 0.2 4 - 0.2 1.2 mAAt TJ • + 1000C and VoROM = Max. rated value

Maximum On-State Voltage:"For iT = 30A (peak) and T C = + 25 °c ................ vTM - 1.8 2.25 - 1.8 2.25 - 1.8 2.25 - 1.8 2.25 V

DC Holding Current"Gate OpenInitial principal current· 150mA (DC) mA

At T C = + 25 °C ••••••••.•••.•.••.•••.•..•••. IHO - 15 30 - 15 30 - 15 30 - 15 30For other case temperatures ••••.•••••••••••••••• .. See Fig. 8. •.

Critical Rate of Rise of Commutation Voltage:-.For Vo = VoROM, I~rms)' 6 A, commutating

di/dt· 3.2 Alms, and gate unenergizedAt T C • + 75 °c •.••••..••••••••••••.•••.••.• dv/dt 3 10 - - - - 3 10 - - - -

V/J.LSI~rms) and T A specified bycurve A of Fig. 16••••••••••••..•••••.••••.•.. - - - 3 10 - - - - 3 10 -I~rms) and T A specified bycurve B of Fig. 16 ...•••.••...•.....•....•..• - - - 4 12 - - - - 4 12 -

Critical Rate of Rise of Off-State Voltage:-For Vo • VoROM' exponential voltage rise, and gate open dv/dt 30 150 - 30 150 - 20 100 - 20 100 - V/J.Ls

At T C = + 100 °c

DC Gate-Trigger Current"!For Vo • 12 volts (DC), RL = 12 (1

TC' +250C, and specified triggering mooe:1+ Mode: positive VMT2' positive VGT .•••...•.•..•.. IGT - 15 25 - 15 25 - 15 25 - 15 25111-Mode: negative VMT2' negative VGT .....••••.•••• - 15 25 - 15 25 - 15 25 - 15 25

1- Mode: positive VMT2' negative VGT •...•.•••..•..• 25 40 25 40 25 40mA- 25 40 - - -

111+Mode: negative VMT2' positive VGT ••••••...•••.• - 25 40 - 25 40 - 25 40 - 25 40

For other case temperatures ••.•..••••••.......•••• .. See Fig. 12 & 13. •.DC Gate-Trigger Voltage:-!

-1112.21-11 12.21-1 1 12.21-1 1 12.2For Vo • 12 volts (DC) and RL • 120

At T C • + 25 °c ••.••••.•.•••••••••••••••••••

For other case temperatures •••...••••..•.•••...• VGT - See Fig. 14. •. VFor Vo • VoROM and RL• 125 (1

At T C • + 100 °c •••..••••.•...••.•.••..••.•• 0.2 - - 0.2 - -' 0.2 - - 0.2 - -Gate-Controlled Turn-On Time:

(Delay Time + Rise Time)For Vo' VoROM and IGT '80mA,

tgl - 2.2 - - 2.2 - - 2.2 - - 2.2 - J.Ls0.1 J.LS rise time, and iT • IDA (peak)

At TC • +25 °c

Thermal Resistance:Junction-to-Case (Steady-State) ••••••.•••••••••••••• - - 4 - - - - - 4 - - -Junction-to-Case (Transient) •••••••••••••••••••••• BJ-C - See Fig. 15. •. °C/WJunction-to-Ambient ••••••••••.••••••••..••.•••• BJ-A - I - I - I See Fig. 16. I - I - I - I See Fig. 16.

-For either polarity of main terminal 2 voltage (VMT2) with feference to main terminal 1.tFOT either polarity of gate voltage (VGT) with Tefetence to main terminal l.'Variants of these devices having dv/dt characteristics selected specifically for

inductive loads are available on special order; for additional information, contactyour ReA Representative 01 your ReA Distributor.

CURRENT WAVEFORMLOAD: RESISTIVECONDUCTION ANGLE '"

CURRENT WAVEFORM; SINUSOIDALLOAD: RESISTIVE OR INDUCTIVE'CONDUCTION ANGLE: 360·

,::l..

110u~.. I...<D-•• u

10000>-0-...•........ " 90>-2 ••" ..2"- ..

80X 2....2>-70

o I 2 345

RMS ON-STATE AMPERES [..1 t (rms ,J

Eg~ri~~:S~~~K,EENCY: 50/60 Hz SINE WAVE I 1 III1CASE TEMPERATURE (TC1: + 75·C IIIIII1

100 RMS ON-STATE AMPERES [I t (rms lJ '"6 II,

~ "" GATE C~~~'ROL MAY ~E LO~i-

E ~" ~g~~O~,~~D ~~~~~I~~~~1NT

~ ;80 ~TEE:L6AA\; MAY NOT 8E RE-UJ V> ••••••• PEATED UNTIL JUNCTION~ ~ t...60 H,z, TEMPERATURE HAS RETURNEDz UJ60 I ...••••.. 1/ TO STEADY-STATE

~ ~ r-- .•.•.•.~ RATED VALUE.

~ ~ 50 Hzr:>~ ~40"''?" z~ 0

20

468 468 46810 100 1000

SURGE CURRENT DURATION-FULL CYCLES92$$-3782

II1III COMt.tUT ATINGI dv/dt

II

Fig. 6 - Oscilloscope display for measurement of gate-controlledturn-on time (tgt).

$, cf'1.2K 2w 7k~" FOR PHOTOCELL CONTROL

CONNECT P'OINTS A' AND B'TO TERMINALS A AND 8,RESPECTIVELY I

B' PHOTOCELL 0'

AC RFI FILTERRCAINPUT C, C, R, R, R3 L,' C,' TYPESVOLTAGE (lyp.) (lyp.)

120V O.lpF O.lpF IOOKn IKn 15Kn IOOpH O.lpF T2700B60Hz 200V IOOV 1/2W 112W 1/2W 200V T2710B

240V O.05pF O.lpF 200Kn 7.5Kn 7.5Kn IOOpH O.lpF T2700D50/60Hz 400V IOOV 1/2W 2W 2W 400V T2710D

20 40 60 80 100 120 140 160

DC GATE-TRIGGER MILLIAMPERES I1GTI

RFI FILTERr------l

-ReA : LFTRIAC I(SEE I CF

TABLE) Io I

UPPER LIMIT OF PERMISSIBLEAVERAGE I DC) GATE POWER

2 DISSIPATION AT RATEDCONDITIONS (SEE FIG. 12.13 a 14)

6 80.01 2 6 80.1 6 81.0

POSITIVE OR NEGATIVE DC GATE-TRIGGER AMPERESUGTI9255-3785

FOR INDUCTIVE LOADSCONNECT POINTS c' AND0' TO TERMINALS C AND0, RESPECTIVELY

O.O~eF200V 40fN. FOR FOR120V 24DVINPUT INPUT

Fig. 11 - Typical phase-control circuit for lampdimming, heat controls, and universalmotor speed controls.

~ 125II:

'"..~ 100::J..J

~ 75

'"cocoii 50>-

'"~co 25g

-50 -25 0

CASE TEMPERA7URE ITC)- "C

Fig. 12 - DC gate-trigger current (for /+ and 11/- triggeringmodes) If.S". case temperature.

PRINCIPAL DC VOLTS· 12 iLOAD -12n, RESISTIVETRIGGERING MODES: All>.-3

!A!AX/AlUA!'"!:i

g-~ 2..J

"Z;;TYPICAL0:

'">-Z 1<i

"~••>-"co

PRINCIPAL DC VOLTS - 12

-;. lOAD· 12 Q, RESISTIVE

; TRIGGERING MODES: I-ANDU]·

'"'"ffi 125..""j 100

i0:

~(fAf... 75cocoi<>- 50 TYPIC~"t'">-

"cou 250

0

100 I...Iu ..-Z;! ~... '">-'" 60:!~

"'-,I"

~~60"'I1;;>- /,,-"'

~5zl 4

~~O:z

V I~~Ii 2

I"l

I I468 68 468

0-3 10-Z 10-1

TIME AFTER APPLICATION OF RECTANGULAR POWER PULSE -SECONDS9ZLS-Z407RI,

FOR T2710 SERIESJEDEC TO·66 WITH HEAT-RADIATOR

Dimensions in Inches and Millimeters

NOTE: Dimensions in parentheses are in millimeters and arederived [rom the basic inch dimensions as indicated.

Note 1: Measured at bottom of heat-radiator.

Note 2: 0.035 in. (.889) C.R.S .• tin plated.Note 3: Recommended hole size for printed-circuit board is

0.070 in. 0.778) dia.

TERMINAL DIAGRAMFOR T2700 AND T2710 SERIES

Pin I - GatePin 2 - Main Terminal

Flange, Case - Main Terminal 2

Case, Flange (T2700 Series) _Main Terminal 2Case, Flange, Heat Radiator (T27l 0 Series)

DIMENSIONAL OUTLINE FOR T2700 SERIESJEDEC TO-66

SEATINGF1l ~'HE

rn=~

INCHES MILLIMETERSSYMBOL MIN. MAX. MIN. MAX. NOTES

• .250 .340 6.35 8.64.•, .028 .034 .711 .863

"0 .620 15.75

"°1 .470 .SOO i1.94 12.70.190 .210 4.83 5.33

'I .093 .107 2.36 2.72F ,050 .G7,) 1.27 1.91 2Fl .050 1.27 1L .360 9.14

'" .142 .152 ],61 3.86q .958 .962 24.)] 24.43

'1 .]50 8.89

'2 .145 3.68.570 .590 14.48 14.99

NOTES,

1. THE OUTLINE CONTOUR IS OPTIONAL WITHIN ZONEOEFINED BY <1>0 AND Fl-

2. DIMENSION DOES NOT INCLUDE SEALING FLANGES.

SUGGESTED MOUNTING ARRANGEMENTFOR T2700SERIES

Q 2 SCREWS, 6 32~-"OTAVAILADLEFROMRCA

~

eDF31AMICA INSULATORSUPPL'EDW,lHOEVICEe 0

00 ~CEHA:si:~,K

6Ql 495334-7

Q '1 NYLON INSULATING BUSHINGSS 1.D.~O.156on,14.00mml

SHOULDER CIA, =-::... 0250 In. (640 mm)

~ SHOULDER THICKNESS0050 on !I 27 mm) MAX

2METAl WASHERS ®2 LOCK WASHERS @

2HEX NUTS@>

'1S0l0ERLUG~

2HEXNUTS@>

OO(]5LJ[]Solid StateDivision

Three-Lead Plastic Types forPower-Control and Power-Switching Applications

For 120-V Line Operation - T2800B (40668) *For 240-V Line Operation - T2800D (40669)*For High-Voltage Operation - T2800M (40670)*

Features:• 10o-A Peak Surge Full-Cycle

Current Ratings• Shorted-Emitter Center-Gate Design• low Switching losses

• low Thermal Resistance• Package Design Facilitates Mounting

on a Printed-Circuit Board

RCA - T2800B, T2800D. and T2800M+ triacs are gate- negative gate triggering voltages. They have an on·statecontrolled full-wave silicon switches utilizing a plastic case current rating of a amperes at a TC of ao°c and repetitivewith three leads to facilitate mounting on printed-circuit off-state voltage ratings of 200, 400, and 600 volts, re-boards. They are intended for the control of ac loads in such spectively.

applications as motor controls. light dimmers. heating The unique plastic package design provides not only ease ofcontrols. and power-switching systems. mounting but also low thermal impedance, which allowsThese devices are designed to switch from an off·state to an operation at high case temperatures and permits reducedon·state for either polarity of applied voltage with positive or heat-sink size.MAXIMUM RATINGS, Absolute-Maximum Values: +Formerly ReA Oev. Nos. TA7364, TA7365, and TA7518,respectively.For Operation with Sinusoidal Supply Voltage at Frequencies up to 50160 Hz and with Resistive or Inductive Load.

REPETITIVE PEAK OFF-STAToE VOLTAGE:· T2800B T2800D T2800MGateopen.TJ=-65to100C ...............................•.•..•....... VOROM 200 400 600 V

RMS ON-STATE CURRENT (Conduction angle = 360°):Case temperature

TC=800C .For other conditions _.............................•.

PEAK SURGE (NON-REPETITIVE) ON-STATE CURRENT:

For one cycle of applied principal voltage

60 Hz (sinusoidal) ................................•.•.........••......50 Hz (sinusoidal) .

For more than one cycle of applied principal voltage , ....•.•....•..••......•....

PEAK GATE·TRIGGER CURRENT:·

GATE POWER DISSIPATION:

Peak (For 1 ~s max., IGTM ~4 A. See Fig. 11 ...•...........•...

AVERAGE .......................•...... , .......•....•.

TEMPERATURE RANGE:·

Storage . .Operating (Casel .......................•..

TERMINAL TEMPERATURE (During soldering):

For 10 s max. (terminals and easel


• For either polarity of gate voltage (VG) with reference to main terminal 1.•. For temperature measurement reference point, seeDimensional Outline.

'TIRMSJ

---8------ SeeFig. 3 ---

'TSM ____ 100 ____A___ 85 ____A

--See Fig. 4---

'GTM____ 4

A

PGM___ 16 ____ w

PGIAVI--- 0.2 ___ W

Tstg -65 to 150 __ °c

TC -65 to'100 __ °c

TT___ 225 ____

°c

Peak Off-State Current:-Gate Open loRoM - 0.1 2 - 0.1 2 - 0.1 2 mA

At TJ ~ + 1000C and VoROM ~ Max. rated value

Maximum On-State Voltage:- vTM - 1.7 2 - 1.7 2 - 1.7 2 VFor iT ~30A(peak) and TC ~ +250C ...............

DC Holding Current:-Gate OpenInitial principal current ~ 150mA (DC) IHO mA

At TC ~ +25 °c .••..•...•••••••.........•••• - 15 30 - 15 30 - 15 30For other case temperatures ••••••••.•..•••.••.•. See Fig. 8.

Critical Rate of Rise of Commutation Voltage:-·For Vo ~ VoROM, IT(RMS) ~ 8 A, Commutating dv/dt V!!'-s

di/dt ~ 4.3 Alms, and gate unenergizedAt T C = +80 °C •••••••••.•.•...••••....•.... 4 10 - 4 10 - 4 10 -

Critical Rate-of-Rise of Off-State Voltage:-For Vo ~ VoROM exponential voltage rise, and gate open

At T C ~ + 1000(; •.••••••.••.•••••••••.....• dv!dt 100 300 - 75 250 - 60 200 - V!!'-sFor other case temperatures •.•.•.•....•..•....• See Fig. 10.

DC Gate-Trigger Current:- t

For Vo ~ 12V (DC), RL ~ 12 DTC = +25 oC, and specified triggering mode:

1+Mode: VMT2 is positive, VG is positive ....•••••..• - 10 25 - 10 25 - 10 25111- Mode: VMT2 is negative, VG is negative IGT - 15 25 - 15 25 - 15 25 mA..........1- Mode: VMT2 is positive, VG is negative ........... - 20 60 - 20 60 - 20 60111+Mode: VMT2 is negative, VG is positive ..•...•.... - 30 60 - 30 60 - 30 60For other case temperatures ••••••.•.••••.•.•••.•. See Fig. 12. & 13.

DC Gate·Trigger Voltage:-tFor Vo ~ 12V (DC) and RL ~ 12 D

At TC = +25 °c •••......•••••••.•.•....•••.•VGT

- 1.25 2.5 - 1.25 2.5 - 1.25 2.5For other case temperatures ..••••••••••....•••.• See Fig. 14.

V

For Vo ~ VoROM and RL = 125 DAt T C = + 100°C ............................ 0.2 - - 0.2 - - 0.2 - -

Gate-Controlled Turn·On Time:(Delay Time + Rise Time)For Vo = VoROM and IGT ~ 80 mA tgt - 1.6 2.5 - 1.6 2.5 - 1.6 2.5 !'-SO.l!,-s rise time, and iT ~ 10A (peak)

At TC = +250C (See Fig. 15).

Thermal Resistance:Junction-to-Case •••••••••••••••..•••••••••••• 8J-C - - 2.2 - - 2.2 - - 2.2 OC!W

Junction-ta-Ambient ••••••••.•••••..•••••••••.• 8J-A - - 60 - - 60 - - 60 °C!W

-For either polarity of main terminal 2 voltage (VMT2) with reference to main terminal!.

tFor either polarity of gate voltage (VG) with reference to main terminal!..Variants of these devices having dv!dt characteristics selected specifically for inductive loads are available onspecial order; for additional information, contact your RCA Representative or your RCA Distributor.

o 4 6 8 10

FULL- CYCLE RMS ON-STATE CURRENT[ITlRMS1]-A9ZC5- t5018RZ

SUPPLY FREQUENCY: SO 160 Hz SINE WAVE II III1LOAD: RESISTIVE

100~~~E 01~~~~~:~~~~E~Tfl:[;T8{~:~ J: 8A I I II11- ..

""" GA~E CO~~IROL MAY ~E LO 5T"wI>- ......• DURING AND IMMEDIATELYE ~"-

FOLLOWING SURGE CURRENT~ ~BO INTERVAL.

" OVERLOAD MAY NOT BE RE-w>- PEATED UNTIL JUNCTION"'z~O Ht7 +6M~fER:ci~~~T~~~ RETUR NED'w

~ :i60~G ••••••.~ RATED VALUE,

ww SOH':>e>>-~ ~40"''? :::::::-::--~ z•• 0

it'20

0 . Ei 8 4 Ei 8 4 Ei 810 100 1000

SURGE CURRENT DURATION-FULL CYCLES9255 - 3910 R2

CURRENT WAVEFORM: SINUSOIDALLOAD: RESISTIVE OR INDUCTiVE

CONDUCTION ANGLE: 360·

CASE TEMPERATURE: MEASURED ASSHOWN ON OiMENSIONAL OUTLINE

2 4 6 8 10 12

RMS ON-STATE CURRENT [tT(RMS~-9A2CS_15017RI

Fig. 6 - Oscilloscope display for measurement of gate-controlledturn·on time (tgt).

RFI FILTERr------l

I LFtlRCA ITRIAC I(SEE I CF

TABLE I J

o I

FOR INDUCTIVE LOADSCONNECT POINTS c' ANDD' TO TERMINALS C ANDD, RESPECTIVELY

$,

1.2K 2W

" FOR PHOTOCELL CONTROLCONNECT POINTS A' AND B'TO TERMINALS A AND B,RESPECTIVELY

B' PHOTOCELL

t20v 240 VI

O.O'5B ,..F/200V 0.I,..F/400VI C,

R, 1.2 Kn I Kil

92:C5-17995

AC RFI FILTER

INPUT C, C2 R, R2 R3LF CF

RCAVOLTAGE (typ.) (typ.l

TYPES

120 V 0.1 ~F 0.1 ~F 100 Kn 2.21<11 151<.11loo~H

0.1 ~FT2800B

60 ", 200 V l00V .W .W .W 200 V

240 V 0.1 Jl.F 0.1 ~F 2501<n J.Jl<n 151<n200,"

0.1 Jl.FT2800D50 Hz 40(1V l00V ,W .w .W 400 V

240V 01 ~F 0.1 ~F~wKn I J~J:n

151<n200 ~H

0.1 ~FT2800D

60", 400 V '00 V .W 400 V

o 0.5 1.5 2.5 3

POSITIVE OR NEGATIVE INSTANTANEOUS ON-STATE VOLTAGE (YT)-V92C5-1502:IRI

Fig. 7 - On-state current vs. on-stare vOltage.

o~J 80

~~'"'"z cr: 60~a'"'">zi=Ci<n-'00<>.'"

uCl

'"~~~'"LCl~

~>

~~"'~J.. ~Cl~

'"~'"-'~ 250•...

'"u 0

9255- 3907

Fig. 10 - Critical rate-of·rise of off-state voltage vs. case temperature.

6 80.01 6 80.1 6 81.0

POSITIVE OR NEGATIVE DC GATE-TRIGGER CURRENT (lGT)-A92SS-3785RI

ciz-'>;21~:;w>.... -z~....~~ 1

~>w~'"

I-w

";::z0

z

~0w-'-'0iOz8w....;;

0 50 roo 150 200 250 300 350DC GATE-TRIGGER CURRENT (IGT)-mA

92CS-17062

b1 0012 0.020 0.31 0.51b2 0.045 0.055 1.143 1.397

D 0.575 0.600 14.61 15.24

E 0395 0.410 10.04 10.41

E1 0.365 0.385 928 9.77E2 0.300 0320 7.62 812. 0180 0.220 4.57 5.58

" 0.080 0.120 2.03 3.04F 0.020 0.055 0.51 1.39H 0.235 0.265 5.97 6.73L 0.500 ~ 12.70 -L1 - 0.250 - 6.35oP 0.141 0.145 3.582 3.683Q 0.040 0060 1.02 1.52z 0.100 0.120 2.54 3,04

Q SCREw,632~..oTA"'''''l'''IILEfAOMRC'''

~ NR231A

~

~RECTANGULARMETALWASHER,,"Vol'l"''''UAfPlJ6L'SH(Ok' ·'''''DW.•.•HPR'Cf5

QV'~~~~~~SUlATORHOLE OIA. '" O.1~5 0, 141 ,n

e ~~,;~5~,;:::~,,'cE6>

~

6 e 1~~:~s~~7K

495334 7-- INSULATING BUSHINGer---- ~~OU~~~'~I~.OOmml

METAL WASHER ®I ~L'~~::~~'~:~E:;n~MAX

lQCKWASHER aHEXNUT @ "'OT"'V""IMlltJ"O~\R,,,,

SOLDEALUG ~~HEXNUT @


OO(]5LJ1]Solid StateDivision

• 6-A (rms) on-state current rating• 100-A peak surge full-cycle current rating at 60 Hz

85-A peak surge full-cycle current rating at 50 Hz• Shorted-emitter design - contains internal diffused resistor from

gate to main terminal 1• Center gate constructior- - provides rapid uniform gate-current

spreading for faster turn-on with substantially reduced heating effects• Low switching losses• Low thermal resistance• Package suitable for mounting on printed-circuit boards

This device is designed to switch from an off-state to anon-state for either polarity of applied voltage with positive or

negative gate triggering voltages. It has an on-state currentrating of 6 amperes at a case temperature of 800C and arepetitive off-state voltage rating of 450 volts.

The unique plastic package design provides not only ease ofmounting but also low thermal impedance, which allowsoperation at high case temperatures and permits reducedheat-sink size.

The T28010F triac (formerly RCA type 40842) is agate-controlled full-wave ac switch. It is intended for thecontrol of ac loads in such applications as motor controls,light dimmers (300 to 1440 WI. heating controls, andpower-switching systems.


For operation with 50160 Hz, Sinusoidal Supply Voltage and Resistive or Inductive Load

REPETITIVE PEAK OFF-STATE VOL TAGE*

Gate open, for TJ = ·40 to +1aaoeRMS ON-STATE CURRENT

For case temperature ITCl of +80°C and a conduction angle of 3600

PEAK SURGE (NON-REPETITIVE) ON-STATE CURRENTFor one full cycle of applied principal voltage lBO-Hz, sinusoidal)

For one full cycle of applied principal voltage (50-Hz, sinusoidallFor more than one full cycle of applied voltage .

PEAK GATE-TRIGGER CURRENT tFor 10 J.1.S max.

GATE POWER DISSIPATION:PEAKtFor 10 /" max. and IGTM:S; 4 A (peak)

AVERAGE .................•.

TEMPERATURE RANGqStorage ........•.Operating (case) .

T2801 DF(40842)

VDROM 450 V

ITIRMS) 6 A

ITSM 100 A

85 ASee Fig. 4

IGTM 4 A

PGM 16 W

PG(AV) 0.2 w

-40 to +150oC-40 to +100oC

• For either polarity of main terminal 2 voltage (VMT2) with reference to main terminal 1.t For either polarity of gate voltage (VG) with reference to main terminal 1.t For information on the reference point of temperature measurement, see Dimensional Outline.

ELECTRICAL CHARACTERISTICS, At Maximum Ratings and at Indicated Case Temperature (TCiUnless Otherwise Specified.

LIMITS

CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNITS

Peak Off-State Current: *Gate Open IDROM - 0.1 2 mAAt TJ = +100oC and VDROM = Max. rated value

Maximum On-State Voltage: *"TM - 1.5 2.25 V

For iT = 10 A (peak) and TC = +250C

Critical Rate of Rise of Commutation Voltage: *'For vD = VDROM, IT(RMS) = 6 A, Commutating dvldt VII'Sdi/dt = 3.2 Alms, and gate unenergized

At TC= +80oC . 2 10 -Critical Rate of Rise of Off-State Voltage. *

For vD = VDROM, exponential voltage rise, and gate open dvldt VII'SAt TC = +100oC 20 250 -For other case temperatures See Fig. 6.

DC Gate-Trigger Current: tFor vD = 12 V (DC), RL = 12n

TC = +250C, and specified triggering mode: IGT mA1+ Mode: VMT2 is positive, VG is positive - 25 80111-Mode: VMT2 is negative, VG is negative - 30 80

DC Gate-Trigger Voltage: *tFor vD = 12 V (DC) and RL = 12n

At TC = +250C .VGT

- 1.5 4.0V

For other case temperatures See Fig. 10.For vD = VDROM and RL = 125n

At TC = +100oC .. 0.2 - -Gate-Controlled, Turn·On Time:

(Delay Time + Rise Time)

For vD = VDROM and IGT = 80 mA tgt - 2.2 - J1S

0.1 f.1Srise time, and iT = lOA (peak)

at TC = +250C

Thermal Resistance:

Junction·to·Case . oJ-C - - 2.2 °C/W

Junction-to-Ambient °J.A - - 60 °C/W

•• For either polarity of main terminal 2 voltage (VMT21 with reference to main terminal 1.t For either polarity of gate voltage IVGI with reference to main terminal 1.• Variants of these devices having dv/dt characteristics selected specifically for inductive loads are available on

special order; for additional information, contact your ReA Representative or your ReA Distributor.

QUADRANTNo. III

MAIN TERMINAL 2 ONNEGATIVE STATE _ I

o "' 6 10

FULL- CYCLE RMS ON-STATE CURRENT[IT(RMSll-A92CS-18078

100-«~l!: ~~ ~BOw>-~~~ ~60~Gww'" >-g; ~40

"'~'" z~ 0

20

SUPPLY FREQUENCY: 50/60 Hz SINE WAVELOAD: RESISTIVECASE TEMPERATURE (TCl : + 800 CRMS ON-STATE CURRENT [IT(RMSl)::6

GATE CONTROL MAY BE LOSTDURING AND IMMEDIATELYFOLLOWING SURGE-CURRENTINTERVAL.OVERLOAD MAY NOT BE RE-pEATED UNTIL JUNCTIONTEMPERATURE HAS RETURNEDTO STEADY-STATERATED VALUE

.68 •• 68 46810 100 1000

SURGE-CURRENT DURATION-FULL CYCLES92CS-18080

VD z VOROMGATE OPEN

2 4 6 8 to 12

RMS ON-STATE CURRENT [IT(AMSll~:cS_18079

o 0.5 I 1.5 2.5

POSITIVE OR NEGATIVE INSTANTANEOUS ON-STATE VOLTAGE (vTI-V92CS-18082

6 80.01 6 80.1 2 6 81.0

POSITIVE OR NEGATIVE DC GATE-TRIGGER CURRENT l1GT)-A

92CS-16083

AC RFI FILTERINPUT C1 C2 R1 R2 R3

L • C •F F

VOLTAGE (typ.l (typ.l

240V O.1I'F O.1I'F 250Kn 3.3Kn 15Kn 200I'H O.lI'F50Hz 400V 100V 1W '/,W Y2W· 400V

240V O.1I'F O.1I'F 200Kn 3.3Kn 15Kn.200I'H O.1I'F

60Hz 400V 100V 1W '/,W %W 400V

~-'>;ll" •...or "w>•...z~....~~ 2~>w~"

.CHAMPFER~r=-:-~PTIONAL hI

SEATING PLANE A L~I :, ,F TEMPERATURE

MEASUREMENTPOINT

INCHES MilLIMETERS


A 0.160 0.190 4.07 4.82b 0.025 0.040 0.64 1.02bl 0012 0.020 0.31 0.51b2 0.045 0.055 1.143 1.3970 0.575 0.600 14.61 15.24E 0.395 0.410 10.04 10.41El 0.365 0.385 9.28 9.77E2 0.300 0.320 7.62 812. 0.180 0.220 4.57 5.58., 0.080 0.120 2.03 3.04F 0.020 0.055 0.51 1.39H 0.235 0.265 5.97 6.73L 0.500 - 12.70 -Ll - 0.250 - 6.35oP 0.141 0.145 3.582 3.683Q 0.040 0.060 1.02 1.52Z 0.100 0.120 2.54 3.04

ffil(]5LJ[JSolid StateDivision

Three-Lead Plastic Types forPower-Control and Power_Switching Applications

For Low-Voltage Operation - T2850A (40900)*For 120-V Line Operation - T2850B (40901)*For 240-V Line Operation - T2850D (40902) *

Features:• Internal Isolation• 10o-A Peak Surge Full-Cycle

Current Ratings• Shorted-Emitter, Center-Gate Design• Low Switch ing Losses


For Operation with Sinusoidal Supply Voltage at Frequencies up (0 50160 Hz and with Resistive or Inductive Load.REPETITIVE PEAK OFF-STATE VOLTAGE: 0 T2850A

Gate open. TJ= -65 to 100°C _.. VOAOM 100

RMS ON-STATE CURRENT IConduct;on angle' 360°1:Case temperature

TC' 75°CFor other conditions

The T2850A, T2850Ba, and T2850Db triacs are gate-controlled full-wave ac switches utilizing a plastic case withthree leads to facilitate mounting on printed-circuit boards.They are intended for the control of ac loads in suchapplications as motor controls, light dimmers, heatingcontrols, and power-switching systems.

These devices are designed to switch from an off·state to anon-state for either polarity of appl ied voltage with positive ornegative gate triggering voltages. They have an on·state cur-rent rating of 8 amperes at aTe of 75°C and repetitive

PEAK SURGE (NON-REPETITIVEI ON-STATE CURRENT:For one cycle of applied principal voltage

60 Hz (sinusoidal)50 Hz (sinusoidal)

For more than one cycle of applied principal voltage ...........•.

• Low Thermal Resistance• Package Suitable for Direct

Mounting on Heat Sink• Glass Passivated Junctions

off-state voltage ratings of 100, 200, and 400 volts, respec-tively.

The ISOWATT package uses a plastic case with three leadsthat are electrically isolated from the mounting flange.Because of this internal isolation, the triac can be mounteddirectly on a heat sink, without any insulating hardware;therefore heat transfer is improved and heat-sink size can bereduced.

aFormerly ReA Dev. No. TA8357

bFormerly RCA Dev. No. TA8358

ITIRMSI------- 8 -----

-----~eH~3---

ITSM100---- A

------85---- A

See Fig. 4 ---

IGTM 4 A

PGM 16 W

PG(AVI 0.2---- w

Tstg ---- -65 to 150--- ')C

TC 65to 100--- 'c

TT 225---- "c

PEAK GATE·TRIGGER CURRENT: 0

For 1 J.lS max.; see Fig. 11 .

GATE POWER DISSIPATION:Peak (For 1 IJSmax., IGTM " 4 A; see Fig. 11)AVERAGE... . ...................•.

TEMPERATURE RANGE:"Storage _ . . . . . . . . . . . . . . . _ .Operating lCasel .................•.

TERMINAL TEMPERATURE (Dur;ng solder;ngl:For 10 s max. {terminals and casel .

LIMITSCHARACTERISTIC SYMBOL T2850A T2850B T2850D UNITS

MIN. TYP. MAX. MIN. TYP. MAX. MIN. TYP. MAX.

Peak Off·State Current:'Gate Open, VOROM = Max. rated value 10ROM - 0.1 2 - 0.1 2 - 0.1 2 mAAt TJ = 100'C ................................

Maximum On-State Voltage:'"TM - 1.7 2 - 1.7 2 - 1.7 2 VFor iT = 30 A (peak) and TC = 25'C ..................

ac Holding Current:'Gate OpenInitial principal current = 150 mA (de) IHO - 15 30 - 15 30 - 15 30 mA

At TC = 25'C ................. ..... . ........ ..For other case temperatures ............ . . . .. . . . . . See Fig. 8

Critical Rate of Rise of Commutation Voltage:"Forva = VOROM, 'T(RMS) = 8 A, Commutating dv/dt V//J-s

di/dt = 4.3 Alms, and gate unenergizedAtTC=75'C ........... ....... ....... . . . . . . . . 4 10 - 4 10 - 4 10 -

Critical Rate of Rise of Off·State Voltage:'For va = VaROM, exponential voltage rise, and gate openAtTC=100'C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . dv/dt 125 350 - 100 300 - 75 250 - V//J-s

For other case temperatures ... .... .... ...... . ....... See Fig. 10

ac Gate·Trigger Current:'tFor vO = 12 V (del. RL = 12n

TC = 25'C, and specified triggering mode:I + Mode: VMT2 is positive, VG is positive ... ...... ... - 10 25 - 10 25 - 10 25ill -Mode: VMT2 is negative, VG is negative. .. ........ IGT - 15 25 - 15 25 - 15 25 mAI - Mode: VMT2 is positive, VG is negative .. ......... - 20 60 - 20 60 - 20 60ill+ Mode: VMT2 is negative, V G is positive ...... ...... - 30 60 - 30 60 - 30 60For other case temperatures ..... ............. .... . . See Figs . 12& 13

ac Gate·Trigger Voltage:'t

11 251251 -11.2512.51 11.251

For va = 12 V (de) and RL = 12nAt TC = 25'C ... ........ ......................

VGT- - 2.5 V

For other case temperatures .. .... ................ See Fig. 14Forva = VaROM and RL = 125nAtTC = 100'C ............ ... . ........... 0.2 - - 0.2 - - 0.2 - -

Gate-Controlled Turn-On Time (Delay Time + Rise Time):For vO = VaROM and IGT = 160 mArise time = O.l/J-s, and iT = lOA (peak) tgt - 1.6 2.5 - 1.6 2.5 - 1.6 2.5 /J-S

At TC = 25°C ISee Fig. 151 ...................Thermal Resistance:

Junction-ta-Case .. ..... .. .... .... .. . ..... ROJC - - 3.1 - - 3.1 - - 3.1 'CIWJunction·to·Ambient ... ..... ... .... . . . . . . . . . . . ... ROJA - - 60 - - 60 - - 60 'CIW

·For either polarity of main terminal 2 voltage (VMT21 with reference to main terminal 1.

t For either polarity of gate voltage (VGI with reference to main terminal 1 .

• Variants of these devices having dv/dt characteristics selected specifically for Inductive loads are available onspecial order; for additional information, contact your RCA Representative or your RCA Distributor.

QUADRANTNo.1


-ONSTATEIH

o 4 6 S

FULL-CYCLE RMS ON-STATE CURRENT[ITIRMS}]-A

92C$ - 15018R2

Fig. 2 - Power dissipation vs. on-state current.

SUPPLY FREQUENCY: SO 160 Hz SINE WAVELOAD: RESISTIVECASE TEMPERATURE {Tcl : 750 CRMS ON-STATE CURRENT [I T RMS J: SA

100-«~.!.;:: ~~ ;80wo-<rZ,W

~ ~60~aww'" 0-g:; ~ 40"'~" Z~ 0

20

GATE CONTROL MAY BE LOSTDURING AND IMMEDIATELYFOLLOWING SURGE CURRENTINTERVAL.OVERLOAD MAY NOT BE RE-PEATED UNTIL JUNCTION

60 Hz TEMPERATURE HAS RETURNEDTO STEADY-STATERATED VALUE.

•••••• I

50 Hz

468 468 46810 100 1000

SURGE CURRENT DURATION-FULL CYCLES92SS-3910 R3

CURRENT WAVEFORM: SINUSOIDALLOAD RESISTIVE OR INDUCTIVECONDUCTION ANGLE: 3600

CASE TEMPERATURE: MEASURED ASSHOWN ON DIMENSIONAL OUTLINE

2 4 6 8 10 12RMS ON - STATE CURRENT [1 T (RMSU -A

92CS-19602

Fig. 6-0scilloscope display for measurement of gate-.controlled turn·on time (tgt).

RFI FILTERr------l

I LF*RCA ITRIAC tlSEE I CF

TABLE) 1o I

FOR INDUCTIVE LOADSCONNECT POINTS c' AND0' TO TERMINALS C ANDD. RESPECTIVELY

1.$: 2W" FOR PHOTOCELL CONTROL Cs

CONNECT POINTS A' AND B'TO TERMINALS A AND e,RESPECTIVELY

e' PHOTOCELL

120v

0.06B ~FI200V

1.2 Kn

AC RFI FILTERACAINPUT C, C2 A, A2 A3

I~P~)CF' TYPESVOLTAGE ltvp.l

120 V 0.1 ~F 0.1 ~F 100 Kn 2.2 Kn 15 Kn 100 ~H 0.1 ~F T2850860 H, 200 V ,OOV ~w ~w ~w 200V

240 V 0.1 ~F 0.1 ~F 250 Kn 3.3 Kn 15 Kn 200 ~H 0.1 ~F T2850050 H, 400V ioo V ,W ~w ~w 400 V

240 V 0.1 ~F 0.1 ~F 200 Kn 3.3 Kn 15 Kn 200 ~H 0.1 ~F T2850060 H, 400 V 'OOV ,w I ~w ~w 400 V

o 0.5 1.5 2 2.5 3POSITIVE OR NEGATIVE INSTANTANEOUS ON-STATE VOLTAGE {vT)-V

92CS-1502lRl

6 80.01 6 80.1 6 81.0

POSITIVE OR NEGATIVE DC GATE-TRIGGER CURRENT tIGTI-A

92SS-31B5R2

Fig. 11 - Gate-pulse characteristics for a/l triggering modes.

-40 20 40

CASE TEMPERATURE (TC)- °C

50 100 150 200 250 300 350DC GATE-TRIGGER CURRENT tI.GTl-mA

UC$-170U

~"l,,~_____T !.-i,-'I

l~ I. b}

INCHES MILLIMETERS


A 0160 0190 407 482

" 0025 0040 064 102

"1 0012 0.020 031 051

"2 0045 0.055 1.143 1 397

D 0.575 0.600 14,61 15.74

E 0.395 0.410 10.04 10.41

E1 0.365 0.385 928 977E2 0300 0.320 7.62 812. 0180 0220 4.57 5.58

'1 0.080 0120 2.03 304F 0020 0.055 0.51 139H 0.235 0.265 5.97 673L 0500 12.70 -L1 0.250 - 635oP 0141 0.145 3582 3683Q 0040 0.060 102 1.52

Z 0.100 0.120 2.54 304

CHAMPFER

~L~H=OPTIONAL \'

SEATlNGPlANE ~ +fT

F TEMPERATUREMEASUREMENTPOINT

Lead No.1 - Main Terminal 1Lead No.2 - Main Terminal 2Lead No.3· GateMounting Tab - Isolated


Fig. 16 - Suggested mounting hardware.

OOC05LlOSolid StateDivision

2N55712N5572T4100M

Thyristors2N5573 T4120B2N5574 T4120DT4110M T4120M

MainTerminal 1

r., .• :.••• • Gate••••••

l..~R~~,;I~~

2N55712N5572T4100MPress-fit

2N55732N5574T4110MStud

T4120BT41200T4120MIsolated-stud

For 120-V Line Operation - 2N5571, 2N5573, T4120B (40802)**For 240-V Line Operation - 2N5572, 2N5574, T4120D (40803)**For High-Voltage Operation - T4100M, T4110M, T4120M

(40797,40798,40804)**

Features:• di/dt Capability = 150 A/ps• Shorted-Emitter Center-Gate Design• Low Switch ing Losses

These ReA triacs are gate-controlled, full-wave silicon acswitches. They are designed to switch from an off-state to anon-state for either polarity of applied voltage with positiveor negative gate triggering voltages.

MAXIMUM RATINGS, A bsolu te·Maximum Values:For Operation with Sinusoidal Supply Voltage at Frequencies up to50160 Hz and with Resistive or Inductive Load.*REPETITIVE PEAK OFF-STATE VOLTAGE:·

Gate open. TJ = -65 to 1000 C .

*RMS ON-STATE CURRENT (Condur.tion angle = 3600):Case temperature

TC= 80° C IPress-fit & stud types)= 750 C (I solated-stud types)

For other conditions

For one cycle of applied principal voltage60 Hz (sinusoidal) .50 Hz (sinusoidal) .

For more than one cycle of applied principal voltage ........•.

RATE..QF-CHANGE OF ON·STATE CURRENT:VOM= VOROM, IGT = 160mA, t, = 0.1 ps ISee Fig. 131 .

PEAK GATE·TRIGGER CURRENT:·For 1 J.l.s max., See Fig. 7.

*GATE POWER DISSIPATION:PEAK IFor 1 ps max.• IGTM -:; 4 A: See Fig. 71 ,.

AVERAGE . .*TEMPERATURE RANGE:·

Storage .Operating ICasel . . .

*TERMINAL TEMPERATURE (During soldering):

• Low On-State Voltage at HighCurrent Levels


These triacs are intended for control of ac loads in applica-tions such as heating controls, motor controls, arc-weldingequipment, light dimmers, and power switching systems.

2N5571 2N5572 T4100M2N5573 2N5574 T4110MT4120B T4120D T4120M

VOROM 200 400 600 V

ITIRMS)15 A15 A

See Fig. 3

ITSM

100 A85 A

See Fig. 4 ----dildt

150 Alps

IGTM4 A

PGM 16 W

PGIAV) 0.5 W

Tstg -65 to 150___°c

TC -65 to 100 ___ OC

TT225 °c

* In accordance with JEDEC registration data format IJS-14. RDF 2) filed for the JEDEC 2N·Series) tYpes.

• For either polarity of main terminal 2 voltage (VMT21 with reference to main terminal 1.

• For either polarity of gate voltage (VGI with reference to main terminal 1.

.•. For temperature measurement reference point, see Dimensional Outline.

I_ ..........

SYMBOLFor All Types

UNITSCHARACTERISTIC UnlessOtherwise Specified

Min. Tvp. Max.PeakOff-State Current:·

Gateopen, TJ = 1000 C, VDROM = Max. rated value 'DROM - 0.2 2· mA

Maximum On-5tate VOltar,::'For iT = 21 A (peak). C = 250 C . . ..... . ... VTM - 1.4 1.8· V

DC Holding Current:'Gate open, Initial principal current = 500 mA (DC), vD = 12V:

20 75TC=250C .... - mATC = -650 C .. .. . . ..... IHO - 75 300·For other case temperatures .. . . . . . . . . ... SeeFig. 6

Critical Rate-of-Rise of Commutation Voltage:'For vD = VDROM, IT(RMSI = 15 A, commutatingdi/dt = 8 Alms, gate unenergized, (SeeFig. 74):

TC = 800 C (press-fit & stud typesl dv/dt 2· 10 - V//ls= 750 C (Isolated-stud) . . ........ . .... 2 10 -

Critical Rate-of-Riseof Off-State Voltage:'For vD = VDROM, exponential voltage rise,gateopen,TC = 1000 C:

2N5571,2N5573, T4120B . . . . . . . . . . . ... -. 30· 150 -2N5572, 2N5574, T4120D . ............... dv/dt 20· 100 - V//lsT4100M, T4110M, T4120M ...... 10 75 -

DC Gate-TriggerCurrent:'. Mode VMT2 VGFor vD = 12 V (DCI, 1+ positive positive - 20 50

RL =30 n, 111- negative negative - 20 50TC = 250 C 1- positive negative - 35 80


Mode VMT2 VG IGT mA

For vD = 12 V (DC), 1+ positive positive - 75 150·RL =30n, III' negative negative - 75 150·TC = -650 C ,- positive negative - 100 200·

111+ negative positive - 100 200·For other case temperatures .. . ........... SeeFigs. 8 & 9

DC Gate-Trigger Voltage:'.For VD = 12 V(DC). RL = 30 n,

TC = 250 C . . . . . . . . . . . - . . . . . . . . ., . .... - 1 2.5TC = -650 C ........ . . . . . . . . . . . . . . . . . . VGT - 2 4· Vt=or other case temperatures ............. SeeFig. 10

For VD = VDROM, RL = 125 n, TC = 1000 C 0.2 - -

Gate-Controlled Turn-Dn Time:(Delay Time + Rise TimelFor vD = VDROM, IGT = 160 mA, tr = 0.1 /lS,iT = 25 A (peakl, TC = 250 C (SeeFigs. 77 & 751 tgt - 1.6 2.5 /lS

Thermal Resistance:Junction-ta-Case:

Steady-State. ..... .. - ...... . ........ ROJC - - 1·Transient .. ........ _ ...... ...... . ...... . SeeFig. 12

oCNJJunction-to-lsolated Hex (Stud, see Dim. Outline):

Steady-State ... .. . . ..... . - ...... ROJIH - - 1.1

* In accordance with JEDEC registration data format (JS·14. RDF 2) filed for the JEDEC (2N..seriesl types.

, For either polarity of main terminal 2 voltage (VMT2) with reference to roain terminal 1.

• For either polarity of gate voltage (VG) wit~ reference to main terminal 1.

CURRENT WAVEFO RM: SINUSOIDAL F'~BmllOAD: RESIST IVE OR INDUCTIVECONDUCTION ANG lE = 360<1CASE TEMPERATU RE: MEASURED AS

SHOWN ON DIM ENSIONAl OUTLINES o 1800\JJ3600Wu<n.~.!.

CONDUCTION ANGLEwU -"I +9m-'!::CD 100"'w;0", PRESS-FIT a0:>-'>- STUD TYPES...J<90

"'''' i"'w:>•.::i~80:l>-

\S,OlATED~S7UD TYPES'" 70

60o 5 10 15

FUll CYCLE RMS ON-STATE CURRENT [IT(RMS~-A

92SS-3822RI

CASE TEMPERATURE (TCI '" 25<1

i :::t~::.:: '-:.:l:.:;::'- .

"E- 100:;:_>-z_Ww~~:>>-u'"w~~z

~2izw0><ni=6§ 40w •.

~-~ 20

"I 2 5 6

INSTANTANEOUS ON-STATE VOLTAGE (vT)-V{POSITIVE OR NEGATIVE I 92LS-2142R2

25

;0Iz

200i=<t~15 15

'"~~t!i

10

;:~

w ~~~Db'~;~~;,!~ECURRENTlInRMSI] = 15 A 1>- AT SPECIFIED CASE TEMP I I r'"in GATE CONTROL MAY BE lOSTz DURING AND IMMEDIATELY FOLLOWING0 SURGE CURRENT INTERVAL_<t100 "'-~I OVERLOAD MAY NOT BE REPEATEDE"i " UNTIL JUNCTION TEMPERATURE HAS

ti ~80 .......~", RETURNED WITHIN STEADY-STATE..- RATED VALUE.w- sO;;; I"'>-z~ 60 ..."

"""-0'"~~ f---~O 40

"':><n

" 20

~0

4 6 8 to <I 6 8102 6 8103

SURGE CURRENT DURATION - FULL CYCLES

92S5 3823RI

Fig. 4 - Peak surge on·state current vs.surge current duration.

o-70 ·60 -50 -40 -30 -20 -10 0 10 20 30 40

CASE TEMPERATURE (Tcl- <lC

Fig. 6 - DC holding current vs. casetemperature.

6 •0.1

DC GATE TRIGGER CURRENT tIGTI-At POSITIVE OR NEGATIVE

92CS-17058

Fig. 7 - Gate trigger characteristics andlimiting conditions for determination ofpermissible gate trigger aulses.

:5 150<><> MtlJ(IMUM'">-

'"100

>-TYPICtlL«

<>g 50

0-75 -50 -25 0 25

CASE TEMPERATURE (Tel - °c

50 100 150 200 250 300 350DC GATE -TRIGGER CURRENT IIGT)- mA

92CS-17062

Fig. 8 - DC gate-trigger current vs. casetemperature (1+ & 11/-modes).

,;z-'>~I,. >- 3 MtlXIMUM~?z« .2,.g TYPICAL.;,~

Fig. 10 - DC gate-trigger voltage vs. casetemperature.

Ii II I T'" 100 I, I ---1'°z~ I",,,,>-'" 60«'" T>-'" I I"'-,1«

>- ~ I'I","'I 60t;;>- /~~>-0zl 40~7 Iorz

V~~~ 20

'l

I468 466 468

10-3 10-2 10-1TIME AFTER APPLICATION OF RECTANGULAR POWER PULSE -SECONDS

92LS-2407RI

R,

R,

R,

,,R,I

II

; "C, C, I

I

:

I

ReA rTRIAC: RSISEE I

TABLEl!

I

L r-- FOR PHOTOCEll CONTROL

Fig. 14-Relarionship between supply voltageand principal current (inductive load)showing reference points for definitionof commurating voltage fdv/dtJ.

MOUNTING CONSIDERATIONS

Mounting of press·fit package types depends upon an in-terference fit between the thyristor case and the heat sink.As the thyristor is forced into the heat-sink hole, metal fromthe heat sink flows into the knurl voids of the thyristorcase. The resulting close contact between the heat sink andthe thyristor case assures low thermal and electrical resis-tances.

A recommended mounting method, shown in Fig. 17,shows press·fit knurl and heat·sink hole dimensions. If thesedimensions are maintained, a "worst-case" condition of0.0085 in. (0.2159 mm) interference fit will allow press-fitinsertion below the maximum allowable insertion force of800 pounds. A slight chamfer in the heat-sink hole will help

Fig. 15-Relationship between off-state voltage,on'state current, and gate-trigger voltageshowing reference points for definitionof turn-on time (tgt).

AC INPUT ,20V 240V 240VVOLTAGE 60H, 6OH. SOH,

c, 0'15 0115 0'15>ooV 400V 400V

c> 0'15 0'15 0'15looV ,00V 'OOV

A, 100.<11 2001<11 2501<1111m ,v< ,v<

R> 221<11 3JKn 33Kn11m 1/2W 1/2W

RJ 15KS'l 151<n 15Kn11m 11m 11m

PHOTOCEL l Rp 12Kn 121<n 121<nCONTROL m m m

cs o.1~F O.l~ 0'15SNUBBER >oov 400V 400VNETWORK

RS ,oon l00,{! ,oon11m 11m 11m

CF 0'15 a l~F 01",AFI >ooV 400V 400V

FIL TEALF lOOjJH >oojJH >oojJH

2N5567 2N5568 2N5568ReA TRIACS 2NSS69 2NSS70 2NSS70

T4120B T41?OD T4120D

center and guide the press·fit package properly into theheat sink. The insertion tool should be a hollow shaft havingan inner diameter of 0.380 ± 0.010 in. (9.65 ± 0.254 mm)and an outer diameter of 0.500 in. (12.70 mml. These di·mensions provide sufficient clearance for the leads andassure that no direct force will be applied to the glass sealof the thyristor.

The press·fit package is not restricted to a single mount-ing arrangement; direct soldering and the use of epoxy ad-hesives have been successfully employed. The press·fit caseis tin-plated to facilitate direct soldering to (he heat sink. A60-40 solder should be used and heat should be applied onlylong enough to allow the solder to flow freely.

,12S13.171

______ 1 4976112.6~t-- 4914{12.6331 .

COPPER OR AllMlNUM HEAT SINK

DIMENSIONAL OUTLINE FOR TYPES2N5573, 2N5574, T4110M

REFERENCEPOINT FOR CASETEMPERATUREMEASUREMENT


MIN. MAX. MIN. MAX.

A - .380 - 9.65t/JO .501 .510 12.73 12.95

t/J°l - .505 - 12.83 2t/J°2 .465 .475 11.81 12.07

J - .750 - 19.05M - .155 - 3.94 1

t/JT '.058 .068 1.47 1.73t/JTl .080 .090 2.03 2.29

Package Employed Resistance-oelW

Press·fitted into heat sink. Mini-mum required thickness of heat 0.5sink = 1/8 in. (3.17 mm)

Press-Fit Soldered directlv to heat sink.(6040 solder which has a melt-ing point of 1880 C 'should be 0.1 to 0.35used. HeatinQ time should besufficient to cause solder to flowfreely!.

Stud & DireCtly mounted on heat sinkIsolated· with or without the use of heat- 0.6Stud 5i nk campau nd.

Mounted on heat sink with a0.004 to 0.006 in. (0.102 to

Stud 0.152 mm) thick mica insulatingwasher used between unit andheat sink.

Without heat sink compound 2.5With heat sink compound 1.5

DIMENSIONAL OUTLINE FOR TYPES2N5571,2N5572, T4100M

REFERENCEPOINT FO R CASETEMPERATUREMEASUREMENT


MIN. MAX. MIN. MAX.

A .330 .505 8.4 12.8 -t/JO, - .544 - 13.81 -

E .544 .562 13.82 14.28 -F .113 .200 2.87 5.08 3J - .950 - 24.13 -

M - .155 - 3.94 1N .422 .453 10.72 11.50 -

t/JT .058 .068 1.47 1.73 -t/JTl .080 .090 2.03 2.29 -

rpW .2225 .2268 5.652 5.760 2

NOTE 1: Contour and angular orientation of these terminalsis optional.

NOTE 2: Pitch diameter of 1/4-28 UNF-2A (coated) threads(ASA 81. 1-19601.

NOTE 3: A chamfer or undercut on one or both ends ofhexagonal portion is optional. 92S5-3817

In the United Kingdom, Europe, Middle East, and Africa, mounting-hardware policies may differ; check the availability of all itemsshown wIth your RCA salesrepresentative or supplier.

WARNING:The RCA isolated-stud package thyristors should be han-dled with care. The ceramic portion of these thyristors con-tains BERYLLIUM OXIDE as a major ingredient. Do notcrush, grind. or abrade these portions of the thyristors be-cause the dust resulting from such action may be hazardousif inhaled.

TERMINAL CONNECTIONSTerminal No.1-GateTerminal No.2-Main Terminal 1

Case,Terminal No.3-Main Terminal 2

DIMENSIONAL OUTLINE FOR TYPEST4120B, T4120D,T4120M


NOTESMIN. MAX. MIN. MAX.

A - .673 - 17.094>0 .604 .614 15.34 15.59

4>01 .501 .505 12.72 12.82E .551 .557 13.99 14.14F .175 .185 4.44 4.69J - 1.055 - 26.79M - .155 - 3.94Ml .200 .210 5.08 5.33N .422 .452 10.72 11.48

4>T .058 .068 1.47 1.73 24>Tl .080 .090 2.03 2.29 24>T2 .138 .148 3.50 3.75 2

r/N'I .225 .2268 5.652 5.760 3

NOTE 1: Ceramic between hex (stud) and terminal No.3 isberyllium oxide.

NOTE 2: Contour and angular orientation of these terminalsisoptional.

[ID(]5LJ[JSolid StateDivision

2N55672N5568T4101M

Thyristors2N5569 T412182N5570 T4121DT4111M T4121M

MainTerminal 1

Main

~~GaleTerminal 1

r-~C) ~ ,J~ate •W ~uf1" .;

MainTerminal 2 Main Main

Terminal 2 Terminal 2

2N5567 2N5569 T4121B2N5568 2N5570 T4121DT4101M T4111 M T4121MPress-fit Stud Isolated-stud

For 120-V Line Operation - 2N5567, 2N5569, T4121B (40799)**For 240-V Line Operation - 2N5568, 2N5570, T4121D (40800)**For High-Voltage Operation - T4101 M, T4111M, T4121 M

(40795,40796,40801)**

Features:• di/dt Capability = 150 Alps• Shorted-Emitter, Center-Gate Design• Low Switching Losses

These RCA triacs are gate·controlled, fuJI-wave silicon acswitches. They are designed to switch from an off·state to anon-state for either polarity of applied voltage with positiveor negative gate triggering voltages.

MAXIMUM RATINGS, Absolute-Maximum Values:For Operation with Sinusoidal Supply Voltage at Frequencies up to50160 Hz and with Resistive or Inductive Load.

*REPETITIVE PEAK OFF·STATE VOLTAGE:·Gale open, T J = -65 10 100° C .... , .....

*RMS ON·STATE CURRENT (Conduction angle = 3600):

Case temperature IT Cl = 85° C .


PEAK SURGE (NON·REPETITIVE) ON·STATE CURRENT:For one cycle of applied principal voltage

* 60 Hz (sinusoidal)50 Hz (sinusoidall .

For more than one cycle of applied principal vottage .

RATE-OF-CHANGE OF ON-STATE CURRENT:VDM= VOROM. IGT = 160 mA, Ir = 0.1 ps ISee Fig. 131

PEAK GATE-TRIGGER CURRENT:·For 1 J.15 max.,See Fig. 7 .

*GATE POWER DISSIPATION:PEAK I For 1 ps max .. IGTM <::: 4 A. See Fig. 71

AVERAGE , , ...•..•.

*TEMPERATURE RANGE:'"Storage .Operati n9 (Case) .

*TERMINAL TEMPERATURE (During soldering):For 10 s max. (terminals and case)



These triacs are intended for control of ac loads in applica-tions such as heating controls, motor controls, arc-weldingequipment, light dimmers, and power switching systems.

2N5567 2N5568 T4101M2N5569 2N5570 T4111MT4121B T4121D T4121M

VOROM 200 400 600 V

ITIRMSI 10 A

See Fig. 3 ---

ITSM

100 A85 A

See Fig. 4----

di/dl

150 Alps

IGTM4 A

PGM 16 W

PG(AVI 0.5 w

TsIg-651o 150--- °c

TC -65'10 100 ___°c

TT225 °c

* In accordance with JEDEC registration data format (JS-14, RDF 2) filed for the JEDEC (2N-Seriesl types .



.••. For temperature measurement reference point, see Dimensional Outline.


At Maximum Ratings and at Indicated Case Temperature (T C' Unless Otherwise Specified

LIMITS

CHARACTE RISTIC SYMBOLFor All Types

UNITSUnless Otherwise Specified

Min. TVD. Max.Peak Off-State Current:·

Gate open, Tj; 1000 C, VDROM; Max. rated value IDROM - 0.1 2' mA

Maximum On-State VOlta.r,::'For iT; 14 A (peakl. C; 250 C ... ... . . ........ VTM - 1.35 1.65' V

DC Holding Current:'Gate open, Initial principal current = 500 mA (DCI. VD; 12V:

TC;250C ..... . ..... . ... ... . ... . . ....IHO

- 15 30 mATC; -650 C ........ . . ..... ... . .. . . . . ... - 75 200'For other case temperatures ..... ... . .. . . ..... See Fig. 6

Critical Rate-of-Rise of Commutation Voltage:'For vD ; VDROM. IT(RMS) ; 10 A, commutatingdildt ; 5.4 Alms, gate unenergized. TC = 850 C

(See Fig. 14) ............. .... dvldt 2' 5 - Vips

Critical Rate-of-Rise of Off·State Voltage:'For VD= VDROM, exponential voltage rise, gate open,TC = 1000 C:2N5567,2N5569, T4121B ... . ........ 30* 150 -2N556B,2N5570,T4121D ... . . . ..... . . .. .... dvldt 20* 100 - VipsT4101M, T4111M, T4121M ..... . ..... 10 75 -

DC Gate-Trigger Current:'. Mode VMT2 VGForvD = 12 V (DCI, 1+ positive positive - 10 25

RL ;30n, III' negative negative - 10 25TC ; 250 C I' positive negative - 20 40


Mode VMT2 VG IGT mA

For vD =12V(DCI. 1+ positive positive - 45 100'RL ;30n, III' negative negative - 45 100'TC = -650 C I' positive negative - 80 150'

111+ negative positive - 80 150'For other case temperatures .... .......... . See Figs. 8 & 9

DC Gate·Trigger Voltage:'.For vD = 12 V(DC), RL = 30 n

TC = 250 C .... ..... . ................ . 1 2.5TC ; -650 C ... ...... . . .. . . . . . . . . . . . .. VGT 2 4' V

I For other case temperatures . . . . . . . ....... . See Fig. 10For vD ; VDROM, RL ; 125 n, TC = 1000 C 0.2 - -

Gate-Controlled Tur~-on Time:(Delay Time + Rise Time)For vD ; VDROM, IGT; 160 mA, tr; 0.1 J.LS,

iT ; 15 A (peak), TC ; 250 C (See Figs. 11 & 15) .... tgt - 1.6 2.5 J.LS

Thermal Resistance:Junction-ta-Case:

Steady·State .. . . . . . . . . . ..... . . . . . . . . . .... OJ·C - - I'

Transient ... . .. . . . .. . ..... . .... ........ . See Fig. 12oCIW

Junction·to-lsolated Hex (Stud, see Dim. Outline):Steady·State ... . .... . ..... . . ........ . . .. OJ·IH - - 1.1

In accordance with JEDEC registration data format (JS-14, RDF 2) filed for the JEDEC (2N-Seriesl types.

, For either polarity of main terminal 2 voltage (VMT2) with reference to main terminal 1.


TRIGGERING MODES: ALLENCLOSED AREA INDICATES

100 LOCUS OF POSSIBLE TRIGGERING: POINTS

•

•• 0.'DC GATE TRIGGER CURRENT (IGTI-A

t POSITIVE OR NEGATIVE

92CS-17058

Fig. 7 - Gate trigger characteristics andlimiting conditions for determination ofpermissible gate trigger pulses.

w 50~"'g 25

Fig. 9 - DC gate· trigger current vs. casetemperature (1- & 111+modes).

50 100 150 200 250 300 350DC GATE-TRIGGER CURRENT (IGTI-mA

92CS-17062

«EI

J 125

~'"'" 100=>uffi 75g'">-w 50>-«"'g 25

0-75

Fig. 8- DC gate-trigger current vs. casetemperature (1+ & 11/-modes).

Fig. 10 - DC gate-trigger voltage vs. casetemperature.

w 100

~ .......1-fO

w'">- '" 80«w>-'"fa~~ 60~~ /~~>-;)zl 40~7"'z

/~~~ 20

"468 468 468

10-3 10-2 10-lTIME AFTER APPLICATION OF RECTANGULAR POWER PULSE -SECONDS

92LS-2407Rt

-v+VOROM

OFF STATEQUADRANT

NO,1I1MAIN TERMINAL 2 ON

NEGATIVE STATE _ I

CURRENT WAVEFORM: SINUSOIDALlOAD: RESISTIVE OR INDUCTIVECONDUCTION ANGLE· 360·CASE TEMPERATURE: MEASURED AS

SHOWN ON DIMENSIONAL OUTLINES

60o 2.5 5 7.5 10

FULL CYCLE RMS ON-STATE CURRENT [IT(RMSJ-A

92SS-3903RI

1.0

INSTANTANEOUS ON-STATE VOLTAGE (vT)-V(POSITIVE OR NEGATIVE)

o 2 4 6 8 10

FUL.L-CYClE RMS ON-STATE CURRENT ~T(RMSIJ-A9255-3902

'" ~~~O~~~;~~~~\URRENT [ITtRMSU: IDA r II- C~E TEMP. {TC):85°C I I I I..to GATE CONTROL MAY BE LOSTz DURING AND IMMEDIATELY FOLLOWING

~ctIOO SURGE-CURRENT INTERVAL

~I I'.. OVERLOAD MAY NOT BE REPEATED~""i~ ~",

UNTIL JUNCTION TEMPERATURE HAS~ V) 80 RETURNED WITHIN STEADY-STATE'" I- RATED VALUE.o.~",- 5Oi;j-",I-

2~ 60 -.::::: ~0'"z'"_co -~U 40 r-~" 20

~0

4 6 810 4 6 6102

SURGE-CURRENT DURATION - FULL CYCLES92SS-3904RI

Fig. 4 - Peak surge on·state current vs.surge current duration .

..E

I;;;0>~~~~200

"''''"'0a~ 150

~I-:J~IOO0"I-U

" 50


.! L.J-----------------It--di/dt

I

T-- :o !lITShl I

o----L- ,-~------ _~ r--'I

9ZCS-110r;1

""J/

I COMMUTATING1_61161

III

v~ i !~o_LL :_L_I I III

T: --Li-"90~'POINT'TM I I:

o_LJ 1_-1-- _~ld++-trf-- 'Ol---j

I,:-VGT I

L __10"10 POINT

0- ------------.,t2CS ·1!>3J;6~2

Fig. 15-Relarionship between off-stiJte voltage,on-state current. and gate-trigger volt-age showing reference points for defi-nition of turn-on time (rgt).

Fig. 14-Relarionship between supply voltageand prinicpal current (inductive load)showing reference points for definitionof commutating voltage fdv/dtJ.

I

ReA 1TRIAC: AS(SEE I

TABLEl,

7----J

MOUNTING CONSIDERATIONSMounting of press-fit package types depends upon aninterference fit between the thyristor case and the heat sink.As the thyristor is forced into the heat-sink hole, metal fromthe heat sink flows into the knurl voids of the thyristor case.The resulting close contact between the heat sink and thethyristor case assures low thermal and electrical resistances.

A recommended mounting method, shown in Fig. 17, showspress-fit knurl and heat-sink hole dimensions. If thesedimensions are maintained, a "worst-case" condition of0.0085 in_ (0.2159 mm) interference fit will allow press-fitinsertion below the maximum allowable insertion force of800 pounds. A slight chamfer in the heat-sink hole will helpcenter and guide the press-fit package properly into the heat

AC INPUTVOLTAGE

Y

AC INPUT 12QV 240V 240VVOL TAGE 60Hl SOH. SOH.

C, o IjJF o IjJF o IjJF200V 400V 400V

C2 o IjJF o IjJF O.lf.JFlooV lOOV lOOV

R, l00Kn 200Kn 250Kn11m IW lW

R2 22Kn 33Kn 33Kn11m 11m 1/2W

R3 15Kn 15Kn 15Kn11m 11m 11m

PHOTOCEL Rp 12Kn 12Kn 12KnCONTROL m m m

cs o.l~F o IjJF o IjJF

SNUBBER 200V 400V 400VNETWORK

RS,oon l00H 'OOn11m 11m 11m

RFI CF 01'" o l~F " IjJF200V 400V 400V

FIL TEALF ''''''''' 200jJH 200jJH

2N5567 2N5568 2N556BRCA TRIACS 2N5569 2N5570 2N5570

T412lB T4121D T4121D

sink. The insertion tool should be a hollow shaft having aninner diameter of 0.380 ± O.OlD in (9.65 ± 0.254 mm) andan outer diameter of 0.500 in. (12.70 mm). Thesedimensions provide sufficient clearance for the leads andassure that no direct force will be applied to the glass seal ofthe thyristor.

The press-fit package is not restricted to a single mountingarrangement; direct soldering and the use of epoxy adhesiveshave been successfully employed. The press-fit case istin-plated to facilitate direct soldering to the heat sink_ A60-40 solder should be used and heat should be applied onlylong enough to allow the solder to flow freely.

b1~~g~;~~)OIA

800 LB MAX.

oo

0.125 (3.171

.- 1 0.4960 (122~ 0.4940 (12.54)

COPPER OR ALUMINUM IiEAT SINK



INCHES MilLIMETERSSYMBOL NOTES

MIN. MAX. MIN. MAX.

A - .380 - 9.65¢D .501 .510 12.73 12.95

¢Ol - .505 - 12.83 2¢O2 .465 .475 11.81 12.07

J - .750 - 19.05M - .155 - 3.94 1

t/JT .058 .068 1.47 1.73t/JTl .080 .090 2.03 2.29

Table I - Case-to-Heat Sink Thermal Resistance for Differ-ent Mounting Arrangements.

Type of Mounting ThermalPackage Employed Resistance·oelW

Press-fitted into heat sink. Mini·mum required thickness of heat 0.5sink: 1/8 in. (3.17 mm).

Press-Fit Soldered directly to heat sink.(60-40 solder which has a melt-ing point of 1880 C should be 0.1 to 0.35used. Heating time should besufficient to cause solder to flowfreelyl.

Stud & Ojrectly mounted on heat sinkIsolated- with or without the use of heat- 0.6Stud sink compound.

Mounted on heat sink with a0.004 to 0.006 in. (0.102 to

Stud 0.152 mm) thick mica insulatingwasher used between unit andheat sink.

Without heat sink compound 2.5With heat sink compound 1.5


INSULATINGMATERIAL -~

TER~MINAL TERMINALNol /N02 IF

~/1 t

J':.OI MII------ E" - -- J


MIN. MAX. MIN. MAX.

A .330 .505 8.4 12.8 -¢Ol - .544 - 13.81 -

E .544 .562 13.82 14.23 -F .113 .200 2.87 5.08 3J - .950 - 24.13 -

M - .155 - 3.94 1N .422 .453 10.72 11.50 -

t/JT .058 .068 1.47 1.73 -t/JTl .080 .090 2.03 2.29 -¢W .2225 .2268 5.652 5.760 2


NOTE 2: Pitch diameter of 1/4-28 UNF-2A (coated) threads(ASA 81. 1·19601.

NOTE 3: A chamfer or undercut on one or both ends ofhexagonal portion is optional.

In the United Kingdom, Europe, Middle East, and Africa, mounting·hardware policies may differ; check the availability of all itemsshown with your ReA salesrepresentative or supplier.

Fig. 18 - Suggested mounting arrangement for stud andisolated-stud package types.

WARNING:The RCA isolated-stud package thyristors shou Id be han-dled with care. The ceramic portion of these thyristors con-tains BERYLLIUM OXIDE as a major ingredient. Do notcrush, grind, or abrade these portions of the thyristors be-cause the dust resulting from such action may be hazardousif inhaled.


Case, Terminal No.3-Main Terminal 2

DIMENSIONAL OUTLINE FOR TYPEST4121B, T4121D, T4121M

SYMBOLINCHES MilLIMETERS


A - .673 - 17.091>0 .604 .614 15.34 15.59

1>01 .501 .505 12.72 12.82E .551 .557 13.99 14.14F .175 .185 4.44 4.69J - 1.055 - 26.79M - .155 - 3.94Ml .200 .210 5.08 5.33N .422 .452 10.72 11.48

1>T .058 .068 1.47 1.73 2.pTl .080 .090 2.03 2.29 21>T2 .138 .148 3.50 3.75 2I/1N .225 .2268 5.652 5.760 3

NOTE 1: Ceramic between hex (stud) and terminal No.3 isberyllium oxide,

NOTE 2: Contour and angular orientation of theseterminalsis optional.

T4103 SeriesT4104 SeriesT4105 Series

OOCD5LJDSolid StateDivision

T4113 SeriesT4114 SeriesT4115 Series

ThyristorsT4103 T4104 T4105T4113 T4114 T4115

Series

400-Hz, -6,10, & 15-A Silicon TriacsFor Control-Systems Application in Airborne and

Ground-Support Type EquipmentFor 115-V Line Operation - T4103B (40783)-, T4104B (40779)-,

T4105B (40775)-, T4113B (40785)-,T4114B (40781)-, T4115B (40777)-

For 208-V Line Operation - T4103D (40784)-, T4104D (40780)-,T4105D (40776)-, T4113D (40786)-,T4114D (40782)-, T4115D (40778)-

et\Iumbers in parentheses (e.g. 40783) are former ReA type numbers.

Features:• RMS On-State Current -

IT(RMS) = 6 A: T4105B, T4105D, T4115B, T4115D10 A: T4104B, T4104D, T4114B, T4114D,15 A: T4103B, T4103D, T4113B, T4113D

• di/dt Capability = 150 A//ls • Commutating dv/dt Capability• Shorted-Emitter Center-Gate Design Characterized at 400 Hz

gate·controlled full·wave silicon ac V RMS sine wave and repetitive peak off· state voltages of200 V and 400 V.

These ReA triacs areswitches.

The devices are designed to switch from an off·state to anon·state for either polarity of applied voltage with positive ornegative gate triggering voltages.

They are intended for operation up to 400 Hz with resistiveor inductive loads and nominal line voltages of 115 and 208MAXIMUM RATINGS.Absolute·Maximum l'aluc.cFor Operatiun H";tl1Sinusoidal SUPP/l' Volla~e o{ Frequendes lip 1(1 -IO(JHz DUel \\'itll Rcsi\{il'e orI"duel;"e Luau.

REPETITIVE PEAK OFF-8TATE VOLTAGE:'G,le open. TJ = 50 10 100°('

RMS ON-8TATE CURRENT (Conduction angle 360°):Ca,c tempcT3tureTe = 900e (T4105B, T4105D, T4115B, T4115D)

= M50e (T4104B, T4104D, T4114B, T4114D)= MOoe (T4103B, T4103D, T4I13B, T4113D)

for other l'ondition,PEAK SURGE (NON·REPETITIVE) ON-8TATE CURRENT:

For one l'Yl'lc of applied principal voltage400 Hz hinu\oidal)60 Hz ('\inu\oidal) ..For more than one l'ydc of applied prim:ipal voltage

RATE-QF-CHANGE OF ON-8TATE CURRENT:VDM = VDROM. ICT =160mA. Ir = 0.1 ,l< (SceFig. iJl

PEAK GATE·TRIGGER CURRENT:'For I ,l< m" .. (See Fig. 7) .

GATE POWER DISSIPATION:PEAK (For I ." max .. IGTM :=;4 A. See Fill. 7)AVERAGE

TEMPERATURE RANGE:StorageOpera ling ((""").

TERMINAL TEMPERATURE (Duri'l! ""ldeTing):For 10'\ ma'. (terminals and case)

• For either polarity of main terminal 2 voltage (VMT2) with reference to main terminal 1.• For either polarity of gate voltage (VG) with reference to main terminal I .•. For temperature measurement reference point, see Dimensional Outline.

These triacs exhibit commutating voltage (dv/dtl capabilityat high commutating current (di/dt). They can also be usedin 60·Hz applications where high commutating capability isrequired.

T4103B T4113B T4103D T41130T4104B T4114B I T4104D T41140T4105B T4115B T4105D T4115D

VOROM

6 A10 A15 A

See Fig. ]

ITSM

200 A100 A

See Fig. 4di)dl

150 A/"sIGTM

4 . A

PGM 16 WPG(AV) 0.2 w

Ts1g -50 10 150 0('

T(' ·50 10 100 0('

TT 225 °c

LIMITSCHARACTERISTIC SYMBOL ALL TYPES UNITS

Min. Typ. Max.Peak Off-State Current:'

Gate open, TJ = 1000C, VDROM = Max. rated value. IDROM - 01 2 mAMaximum On-State Voltage:'

For iT = 21 A (peak), TC = 25 ° C. VTM - 1.4 18 VDC Holding Current:'

Gate open, Initial principal current = 500 mA (DC), vD = 12 V,TC=250C IHO - 20 75 mA

For other case temperatures See Fig. 6

Critical Rate-of-Rise of Commutation Voltage:'For vD = VDROM, IT(RMS) = rated value, gate unenergized, (See Fig. 14):Commutating di/dt = 21.4 Alms, TC = goo CT4105B, T4105D, T4115B, T4115D 5 10 -

Commutating di/dt = 36 Alms, TC = 85° C dv/dt V/}.'ST4104B, T4104D, T4114B, T4114D 5 10 -

Commutating di/dt = 533 Alms, TC = 80° CT4103B, T4103D, T4113B, T4113D 5 10 -

Critical Rate-of-Rise of Off-State Voltage:'For vD = VDROM, exponential vol tage rise,gate open, TC = 1000 C dv/dt 30 150 - V/}.'S

DC Gate-Trigger Current:'t Mode VMT2 VGFor vD = 12 V (DC), 1+

---20 50positive positive -

RL = 30 n. and 111- negative negative IGT - 20 50 mATC = 25 ° C 1- positive negative - 35 80

III + negative positive - 35 80

For other case temperatures. See Figs 8 & 9DC Gate-Trigger Voltage:'t

JeIFor vD = 12 V(DC), RL = 30n. TC - 25°C. VGT - 1 2.5 V

For other case temperatures. Fig. 10For vD = VDROM, RL = 125~l TC = 100°C 02 - -

Gate-Controlled Turn-On Time:(Delay Time + Rise Time)For vD = VDROM, IGT = 160mA, tr = 0.1 }.'S, tgtiT = 25A (peak), TC = 250C. (SeeFigs. 11 & 15) - 1.6 25 }.'S

Thermal Resistance

Steady-State (Junction-to-Case) 8J-C - - 1 °C/WTransient (Junct ion-to-Casel. See Fin 12Steady-State (Junction-to-Ambient). 8J-A - - 33 °C/W

r----,;:C"U;;CRR;;;E;;;N:;;T;-W~•••V:;;E"FC;;O:;;P.-;;M;-'7;5;;'N"'U"'5:;;0"IO"."L---r--------,

LOAD: RESISTIVE OR INDUCTIVE ••1-1\j8r-1 8m1CONDUCTION ANGLE = 360· 1/CASE TEMPERATURE: MEASURED AS

SHOWN ON DIMENSIONAL OUTLINESw'-'<n.«,'-'-w'-'-'!::al 100«w,"",o~-' •.....J<90«","'W~Q.

:::i~80x •...«'"

25

3:I ....z0 200::it ..~.i2is 15

'"li:i'w 10

'"g"

o 5 10 15 20 25 30

FULL-CYCLE RMS ON-STATE CURRENT [ITlRMS1J- A

92LS-2139R2

o 180' ,JJ360'CONDUCTION ANGLE

<8r +8m

60

FUL~ CYCLE RMS ~N-STATE CU~ORENT [IT(R~SiJ-A 92C5-17055

SUPPLY fREQUENCY: 60/400 HzLOAD RESISTIVERMS ON-STATE CURRENT [1T(RMSI}

200 RATED VALUE AT SPECIFI ED TEMP

GATE CONTROL MAY BE LOSTDURING AND IMMEDIATELYfOLLOWING SL:RGE CURRENTINTERVAL.OVERLOAD MAY NOT BE REPEATEDUNTil JUNTION TEMPERATUREHAS RETURNED TO STEADY-STATERATED VALUE

468 46810 100 loao

SURGE CURRENT DURATION-FULL CYCLES92CS-17056

..-lIDO :::

.~....-~

I 2

INSTANTANEOUS ON-STATE VOLTAGE IVTI-VI POSITIVE OR NEGATIVE 1

TRIGGERING MODES: ALLENCLOSED AREA INDICATESLOCUS OF POSSIBLE TRIGGERINGPOINTS

• 80.1

DC GATE TRIGGER CURRENT {IGTl-A(POSITIVE OR NEGATIVE

92CS-17058

determination of permissible gate trigger pulses.

92CS-17059

Fig. 8 - DC gate-trigger current vs. case temperature.(/+ & 11/- modes).

..EI

~0-~~ 200o

'"~ 150

'"'"0-

••• 100!;<'"o 50o

,;z 4...••• >

H3... '"0->z-..'"o0-

"'~ •••-SO -25 0

CASE TEMPERATURE (TC)--C

VD

DJ-----------------

'"100

u ,-zI!",,,,•... ~

BO~~!i>/",

60"'I:;; •.../~~

•... ~zl 4",0u'l"'z V"'00."~ 20,...-

"l

468 468 46810-3 10-2 10-1

TIME AFTER APPLICATION OF RECTANGULAR PCY'NER PULSE -SECONDS92LS~2407RI

IIII II I----r----'III

I COMMUTATING

I-dildl

III

COMMUTAT:NG1- di/dlI

IIITII CQMMUTATING--I d ~/dt

II

Fig. 14 - Relationship between supplV voltage and principal current(inductive load) showing reference points for definition ofcommutating voltage (dv/dtJ.

II I

Vo I II Io_L~ LL __I I II I r

I I I

TI-rl:: I"'" 90% POINT

In••I I I0-.l~1 __ - I-l---

~'d -i---L-t,I I If---'Q' --i

I,1- ~•• 1"GT I

.--IO'fo POINTo_L - -------- -92CS-13366R2

Fig. 15 - Relationship between off'stare voltage, on-state current,and gate-trigger voltage showin~ reference points for defini-tion of turn-on time (tgt).

Mounting of press-fit package types depends upon aninterference fit between the thyristor caseand the heat sink.As the thyristor is forced into the heat-sink hole, metal fromthe heat sink flows into the knurl voids of the thyristor case.The resulting close contact between the r:eat sink and thethyristor case assures low thermal and electrical resistances.

A recommended mounting method, shown in Fig. 17,shows press-fit knurl and heat-sink hole dimensions. If thesedimensions are maintained, a "worst-case" condition of0.0085 in. (0.2159 mm) interference fit will allow press-fitinsertion below the maximum allowable insertion force of800 pounds. A slight chamfer in the heat-sink hole will help

RFI FILTERr----l

1 LF

: CFIIL J

r-----,I

RCA 1 100 nTRIAC I 1/2 W

II If-----J

SNUBBER NETWORK FORINDUCTIVE LOADS OR WHENCOMMUTATI NG VOLTAGE (dv/dt)CHARACTERISTIC IS EXCEEDED.

center and guide the press-fit package properly into the heatsink. The insertion tool should be a hollow shaft having aninner diameter of 0.380 ± O.ClO in. (9.65 ± 0.254 mm) andan outer diameter of 0.500 in. (12.70 mm). These di-mensions provide' sufficient clearance for the leads and assurethat no direct force will be applied to the glass seal of thethyristor.

The press-fit package is not restricted to a singlemounting arrangement; direct soldering and the useof epoxyadhesives have been successfully employed. The press-fit caseis tin-plated to facilitate direct soldering to the heat sink. A60-40 solder should be used and heat should be applied onlylong enough to allow the solder to flow freely.

.125(3.17)

______ ---.1 .4976 (l2.6~r .4974112.6331 .

COPF£R OR ALlIlilIlNUM HEAT SINK

Table 1 - Case-to-Heat Sink Thermal Resistance for DifferentMounting Arrangements.

Type of Mounting ThermalPackage

Employed Resistance-oC/W

Press·fitted into heat sink.0.5(Minimum Required thickness

of heat sink = 1/8 in.

Press-FitSoldered directly to heat sink.(60-40 solder which has a melt-ing point of 1880 C shou!d be

0.1 to 0.35used. Heating time shouldbe sufficient to caus~ solderto flow freely).

Directly mounted on heat sinkwith or without the use of heat- 0.6sink compol:nd.

StudMounted on hea~ sink with a0.004 to 0.006 in. thick I'tlicainsulating washer used be-tween unit and heat sink.

Without heat sink compound 2.5

With heat sink compound 1.5

In the United Kingdom, Europe, ,Middle East, and Africa, mounting-hardware policies may differ: check the availability of all itemsshown wIth your ReA sales representative or supplier.

DIMENSIONAL OUTLINE FORT4103, T4104, AND T4105 SERIES

REFERENCEPOINT FOR CASE

~

t:'.m:~~~~ERM~N::m~~~~~ -17 TERrN~I~AL

4P No.1 , 1.02

qp:j:, 1.1,.T = ==oj- 1

M I.0 -J >--A--1TERMINAL No.2 I-- - J ~---I


NOTESMIN. MAX. MIN MAX.

A - 380 - 965¢D 501 510 1273 1295"D, - .505 - 12.83 2¢D, 465 .475 1181 12.07

J - .750 - 19.05M - .155 - 3.94 1

",T 058 068 147 173

" T, .080 .090 2.03 2.29

NOTE 1: Contour and angular Ollentatlon of these terminals IS

optional.NOTE 2: Outer diameter of knurled SUI face.

DIMENSIONAL OUTLINE FORT4113, T4114, AND T4115SERIES

INSULATINGMATERIAL --

"~'~."No I /NO 2

4P r.wI f ~ L

1----.01

II MI

REFERENCE.T, -- -POINT FOR CASE

TEMPERATUREMEASUREMENT

L -A... ~E . J -f'SEATING PLANE


MIN. MAX. MIN. MAX.

A 330 505 8.4 12.8 -¢D, - 544 - 1381 -

E 544 562 1382 1428 -F 113 200 2.87 5.08 3J - .950 - 24,13 -M - .150 - 3.94 1N 422 453 1072 1150 -

¢T 058 .068 147 173 -",T, .080 .090 2.03 2.29 -"W .2225 2268 5.652 5.760 2

NOTE 1: Contour and angular orientation of these terminalsIS optional.NOTE 2: Pitch diameter of ',0·28 UNF·2A (coated) threads(ASA B1. 1-1960).NOTE 3: A chamfer or undercut on one or both ends of hexagonalpOItioo is optional.

Terminal No. I-GateTerminal No.2-Main Terminal I

Case, Terminal No.3-Main Terminal 2

On special request, isolated·stud package triacs are alsoavailable.

[Kl(]3LJDSolid StateDivision T6401 T6411 T6421

Series

Main MainMain Terminal 1 TerminallTerminal 1

f"Main .....ITerminal 2

Main Main

Terminal 2 Terminal 2T6401 Series

T6411 series T6421 SeriesPress-fit

Stud Isolated-stud

Press-Fit, Stud, and Isolated-Stud Type Packages

For 120-V Line Operation - T6401 B (40660)*, T6411 B (40662)*,T6421B (40805)*

For 24D-V Line Operation - T6401D (40661) *, T6411D (40663)*,T6421D (40806)*

For High-Voltage Operation - T6401M (40671)*, T6411M (40672)*,T6421M (40807)*

Features:• di/dt Capability = 100 Alils• Shorted-Emitter Center-Gate Design• Low Switching Losses



These RCA triacs are gate-controlled full-wave silicon acswitches. They are designed to switch from an off·state to anon-state for either polarity of applied voltage with positiveor negative gate triggering voltages.

These triacs are intended for control of ac loads in applica-tions such as heating controls, motor controls, arc-weldingequipment, light dimmers, and power switching systems.They can also be used in air-conditioning and photocopyingequipment.

MAXIMUM RATINGS, Absolute-Maximum Values:For Operation with Sinusoidal Supply Voltage at Frequencies up to50160 Hz and with Resistive or Inductive Load.REPETITIVE PEAK OFF-STATE VOLTAGE:·

Gate open, T J ; -50 to 1000 C

RMS ON-STATE CURRENT (Conduction angle = 3600):Case temperature

TC; 650 C (Press-fit typesl; 600 C (Stud typesl .; 550 C (Isolated-stud typesl

For other conditions

T6401B T6401D T6401MT6411B T6411D T6411MT6421B T6421D T6421M

VOROM 200 400 600 V

ITIRMSI30 A30· A30 A

_____ See Fig_ 3 ____

ITSM

300 A265 A

See Fig_ 4 ----

For one cvcle of applied principal voltage60 Hz (sinusoidal) _ .50 Hz (sinusoidal)

For more than one cycle of applied principal voltage .

RATE-QF-CHANGE OF ON-STATE CURRENT:VOM; VOROM, IGT; 200 mA, tr ; 0.1 115 (See Fig_ 731 _ .

PEAK GATE-TRIGGER CURRENT:·For 1 J1smax.,See Fig. 7 .....

GATE POWER DISSIPATION:PEAK (For 1 Ils max., IGTM -0::; 4 A: See Fig. 71 ... ", •.•••.• , •..AVERAGE

TEMPERATURE RANGE:·Storage .Operating (Case) . . ............•..

TERMINAL TEMPERATURE (During soldering):

----- 40 ----- W

------0.75----- W



• For temperature measurement reference point, see Dimensional Outline.

I LIMITS

For All TypesCHARACTE R ISTIC SYMBOL Unless Otherwise Specified UNITS

Min. Tvo. Max.Peak Off·State Current:·

Gate open, TJ = 1000 C, VDROM = Max. rated value IDROM - 0.2 4 mA

Maximum On·State Voltage:'For iT = 10:) A (peakl. TC = 250 C ................ VTM - 2.1 2.5 V

DC Holding Current:'

IGate open. Initial principal current = 150 mA (DCl. vD = 12V:TC=250C .............. ..... . . ...... IHO - 25 60 mAFor other case temperatures .... . ...... . .... See Fig. 6

Critical Rate-of·Rise of Commutation Voltage:.For VD = VDROM, 'T(RMS) = 30 A,commutatingdi/dt = 16 Alms, gate unenergized, (See Fig. 14):

TC = 650 C (Press· fit types) ..... . .......... 3 20 -= 600 C (Stud types) ........ . .......... dv/dt 3 20 - V/lls= 550 C (lsolated·stud types) .............. 3 20 -

Critical Rate-of-Rise of Off·State Voltage:'For VD = VDROM, exponential voltage rise, gate open,TC = 1000 C:

T6401B,T6411B. T6421B .......... . ... . ... 40 200 -T6401D, T6411D. T6421D· . .. . ..... . ....... dv/dt 25 150 - V/llsT6401M, T6411M. T6421M ..... . ... 20 100 -

DC Gate-Trigger Current:'. Mode VMT2 VGFor vD = 12 V (DC), 1+ positive positive - 15 50

RL =30 n, 111- negative negative - 20 50

TC = 250 C I' positive negative IGT - 30 80 mA111+ negative positive - 40 80

For other case temperatures ..... .. . .. . . ........ See Figs. 8 & 9

DC Gate·Trigger Voltage:'.For VD = 12 V(DCl. RL = 30 n,

TC = 250 C .... ............ . . ....... - 1.35 2.5V

For other case temperatures . . ... . VGT See Fig . 10........ .For VD = VDROM, RL = 125 n, TC = 1000 C 0.2 - -

Gate-Controlled Turn-Gn Time:(Delay Time + Rise Time)For vD = VDROM, IGT = 200 mA, tr = 0.1 IlS.iT = 45 A (peak), TC = 250 C (See Figs. 11 & 15) .. tgt - 1.7 3 IlS

Thermal Resistance, Junction-ta-Case:Steady-State

Press·fit types ............ ...... . ...... . - - 0.8Stud ... . ............. . ...... ....... . °J-C - - 0.9

Transient (Press-fit & stud types I .. ..... . ....... . . See Fig. 12oc/w

Thermal Resistance. Junction·to·Hex (Stud. See Dim. Outline):Steady-State (Isolated-stud typesl ..... .... . ....... 0J·IH - - 1

, For either polarity of main terminal 2 voltage (VMT2) with reference to main terminal 1.• For either polarity of gate voltage (VG) with reference to main terminal 1.

QUADRANTNo.1


-ONSTATEIHO

1 fURRENT WAVEFORM ~SINUSO IDAL ~ t8I~ 8mli' LOAD: RESISTIVE OR INDUCT IVE

I CONDUCTION ANGLE" 360· Ii :~ CASE TEMPERATURE: MEASURED

AS SHOWN ON DIMENSIONAL OUTUNES o 180·V60.

~IOO... CONOUCTION ANGLE

" 'Sr +Sm

~ 90i'!i PRESS-FIT TYPES...B 80 STUD TYPES

"'.:~

70

<i

~ 60 ISOLATED-STUD TYPES

~ 50o 10 20 30 40

FULL CYCLE RMS ON-STATE CURRENT [IT(RMS1] -A92SS-3812R2

0.5 I 1.5 2 2,5INSTANTANEOUS ON-STATE VOLTAGE (vTl-V

(POSITIVE OR NEGATIVE) 9255-3811

Fig. 5 - On-state current vs. on-statevoltage.

CURRENT WAVEFORM: SINUSOIDALLOAD: RESISTIVE OR INDUCTIVECONDUCTION ANGLE· 360·

50

10 20 30 40 ~o 60FULL-CYCLE RMS ON-STATE CURRENT [IT(RMSI]-A

9255-3810

LOAD: RESISTIVERMS ON-STATE CURRENT [InRMS)]-30A AT

"'SPECIFIED CASE TEMP.... 300 IIIIII1 II IT~

I .\. GATE CONTROL MAY BE LOST~ 250

"DURING AND IMMEDIATELY FOLLOWING

~1 SURGE CURRENT INTERVAL..•.. OVERLOAD MAY NOT BE REPEATED

~200UNTIL JUNCTION TEMPERATURE HAS

60,Hz RETURNED TO STEADY-STATE

~fRATED VALUE •

a:~ 15 ~~i 150Hz ~-::> ••.....~Ol r'"~>< 5

""'Q.

I 6810

468102

SURGE CURRENT DURATIO"-J -FULL CYCLES

Fig. 4 - Peak surge on-state current vs.surge current duration.

4 6 ~03

92SS-3815R2

20-70 -60 -50-40 -30 -20 -10 0 10 20 30 40

CASE TEMPERATURE (TC )_OC


I RING MOO ES: ALL1008 ENCLOSED AREA INDICATES LOCUS OF

6 I E TRI RIN I T

4

Fig. 7 - Gate trigger characteristics andlimiting conditions for determination ofpermissible gate trigger pulses.

o-70 -60 -50 -40 -30 -20 -10 0 10 20 30 40

CASE TEMPERATURE (TCI-OC

Fig. 9 - DC gate-trigger current vs. casetemperature (1- & 11/+modesl.

50 100 ISO 200 250 300 350 400 450

DC GATE-TRIGGER CURRENT (IGT)-mA

Fig. 8 - DC gate-trigger current vs. casetemperature (1+ & 11/-modesl.

o-70 -60 -so -40 -30 -20 -10 0 10 20 30 40

CASE TEMPERATURE (TC)_OC

Fig_ 10 - DC gate-trigger voltage vs. casetemperature.

"' 1, I IUz 100 ;"1'""'~~~ II V1-' 80 /'>-<l0:>~ffi0-:<"'0- 60

"-"' /'0",<lo-U ,/z,"'0 40Uo-cr'"'z ----"-0

E; 20

I~0 I

468 468 46810-3 10-2 10-1 I

TIME AFTER APPLICATION OF RECTANGULAR POWER PULSE -SECONDS92LS-2263RI

TLJ--- --------------,

/--d1/dt

I

0--- ~Es~-_~ _~ r--"

,,ReA ,TRIAC I RSISEE I

TABLE)I ,,, Cs,,

Fig. 14 - Relationship between supply voltageand principle current (inductive load)showing reference points for definitionof commutating voltage (dv/dr).

Lf __ ..J L -.J

SNUBBER NETWORK FOR INDUCTIVELOADS DR WHEN COMMUTATING VOLTAGE(ctv/dtl CHARACTERISTIC IS EXCEEDED.

MOUNTING CONSIDERATIONSMounting of press-fit package types depends upon an in-

terference fit between the thyristor case and the heat sink.As the thyristor is forced into the heat·sink hole, metal fromthe heat sink flows into the knurl voids of the thyristorcase. The resulting close contact between the heat sink andthe thyristor case assures low thermal and electrical resis-tances.

Fig. 15 - Relationship between off-state voltage,on-state current, and gate-trigger vo/t-age shoWing reference points for defi-nition of rum-on time (fgt).

AC INPUT '20V 2AOV NOVVOLTAGE 60••• 60••• 50'"

C, O.ljlf 0.'1'f O.ljlf200V 4001/ 400V

c2 O.ljlf 0.11'f 0.11'flOOV l00v l00V

Al l00Kfl 200Kfl 250Kfl1IZW IW lW

A22.2Kfl 3.3Kfl 3.3Kfl1IZW 1IZW 1IZW

A315K{l 15Kfl 15Kn1IZW 112W 1IZW

Cs O.ljlf 0.11'f O.ljlfSNUBBER 200V 400V 400VNETWORK ,oon loon ,oon

AS 1IZW 1IZW 1IZW

CF· O.ljlf 0.11'f O.ljlf

AFI 200V 400V 400V

FILTER P<-'LF· IlJ01lH 200jJH

ACATRIACST64018 T64010 T64010T64118 T64110 T64110T64218 T6421 0 T6421 0

center and guide the press-fit package properly into theheat sink. The insertion tool should be a hollow shaf:t havingan inner diameter of 0.380 ± 0.010 in. (9.65 ± 0.254 mm)and an outer diameter of 0.500 in. (12.70 mm). These di·mensions provide sufficient clearance for the leads andassure that no direct force will be applied to the glass sealof the thyristor.

The press·fit package is not restricted to a single mount-ing arrangement; direct soldering and the use of epoxy ad-hesives have been successfully employed. The press·fit caseis tin-plated to facilitate direct soldering to the heat sink. A60-40 solder should be used and heat should be applied onlylong enough to allow the solder to flow freely.

A recommended mounting method, shown in Fig. 11,shows press-fit knurl and heat-sink hole dimensions. If thesedimensions are maintained, a "worst-case" condition of0.0085 in. (0.2159 mm) interference fit will allow press-fitinsertion below the maximum allowable insertion force of800 pounds. A slight chamfer in the heat·sink hole will help

92 LS- 2264R3

NOTE: Dimensions in parentheses are in millimeters and are derivedfrom the basic inch dimensions as indicated.

DIMENSIONAL OUTLINE FORT6401 SERIES


MIN. MAX. MIN. MAX.

A - .380 - 9.65¢O .501 .510 12.73 12.95

¢OI - .505 - 12.83 2¢O2 .465 .475 11.81 12.07

J - .750 - 19.05M - .155 - 3.94 1

¢T .058 .068 1.47 1.73

¢Tl .080 .090 2.03 2.29


NOTE 2: Outer diameter of knurled surface.

Type of Mounting ThermalPackage Employed Resistance·oeM

Press·fitted into heat sink. Mini·mum required thickness of heat 0.5sink: 1/8 in.13.17 mm)

Press-Fit Soldered directly to heat sink.(60-40 solder which has a melt·ing point of 1880 C should be 0.1 to 0.35used. Heating time should besufficient to cause solder to flowfreelvl.

Directly mounted on heat sinkStud with or without the use of heat· 0.6

sink compound.



MIN. MAX. MIN . MAX.

A .330 .505 8.4 12.8 -¢OI - .544 - 13.81 -

E .544 .562 13.82 14.28 -F .113 .200 2.87 5.08 3J - .950 - 24.13 -

M - .155 - 3.94 1N .422 .453 10.72 11.50 -

¢T .058 .068 1.47 1.73 -¢Tl .080 .090 2.03 2.29 -

rpW .2225 .2268 5.652 5.760 2

NOTE 2: Pitch diameter of 1/4-28 UNF·2A Icoatedl threadsIASA 81. 1·1960l.


l-"",,".,,"DF6Bcv--- MICA INSULATORAVA'LA8lE 111 P'iBI'SHEDo .""",,,,,,'"""

In the United Kingdom, Europe, Middle East, and Africa. mounting-hardware policies may differ; check the availability of all itemsshown with your ReA salesrepresentative or supplier.

WARNING:The RCA isolated·stud package thyristors should be han·died with care. The ceramic portion of these thyristors con·tains BERYLLIUM OXIDE as a major ingredient. Do notcrush, grind, or abrade these portions of the thyristors be·cause the dust resulting from such action may be hazardousif inhaled.


Case,Terminal No.3-Main Terminal 2




A - .673 - 17.094>0 .604 .614 15.34 15.594>01 .501 .505 12.72 12.82

E .551 .557 13.99 14.14F .175 .185 4.44 4.69J - 1.298 - 32.96M .210 .230 5.33 5.84Ml .200 .210 5.08 5.33N .422 .452 10.72 11.48

4>T .058 .068 1.47 1.73 2¢Tl .125 .165 3.18 4.19 24>T2 .138 .148 3.50 3.75 21JN .2225 .2268 5.652 5.760 3

NOTE 1: Ceramic between hex (stud) and terminal No.3 isberyllium oxide.


NOTE 3: Pitch diameter of 1/4·28 UNF-2A (coated) threadsIASA B1. 1·19601.

[lliCIBLJDSolid StateDivision

J.i Gate

ThyristorsT6404 T6405T6414 T6415

Series

For Control-Systems Application in Airborne andGround-Support Type Equipment

For 115-V Line Operation - T6404B (40791)- T6405B (40787)-T6414B (40793)- T6415B (40789)-

For 208-V Line Operation - T6404D (40792)- T6405D (40788)-T6414D (40794)- T6415D (40790)-

Features:• RMS On-State Current - • Shorted-Emitter Center-Gate Design

IT(RMS) = 25A: T6405 and T6415 Series= 40A: T6404 and T6414 Series

• di/dt Capability = 100 A/ps• Commutating dv/dt Capability Characterized at 400 Hz

These ReA triacs are gate-control!ed full-wave silicon acswitches. They are designed to switch from an off-state to anon·state for either polarity of applied voltage with positiveor negative gate triggering voltages.

They are intended for operation at 400 Hz with resistiveor inductive loads and nominal line voltages of 115 and

208 V RMS sine wave and repetitive peak off-state voltagesof 200 V and 400 V.

These triacs exhibit com mutating voltage (dv/dt) capabilityat high commutating current (di/dt). They can also be usedin 60·Hz applications where high commutating capabilityis required.

T6404B T6404DT6405B T6405DT6414B T6414D

vDROM T6415B T6415D

200 400 VIT(RMS)

MAXIMUM RATINGS, Absolute-Maximum Values:For Operation with Sinusoidal Supply Voltage at 400 Hz and with Resistive or Inductive Load.REPETITIVE PEAK OFF·STATE VOLTAGE:'

Gate open, TJ = -50 to "0° C . .....•..•.RMS ON·STATE CURRENT (Conduction Angle = 3600):

Case temperatureTC = 85° C IT6405 Series)

800 C (T6415 Series)700 C (T6404 Series)650 C (T6414 Series)

PEAK SURGE (NON·REPETITIVE) ON-STATE CURRENT:For one cycle of applied principal voltage400 Hz (sinusoidal) .60 Hz (sinusoidal) .

For more than one cycle of applied principal voltageRATE-OF-CHANGE OF ON-STATE CURRENT:

VDM = VDROM, IGT = 200 mA, tr = 0.1 !'s (SeeFig. 15)FUSING CURRENT (for Triac Protection):

TJ = -50 to 1100 C, t = 1.25 to 10 msPEAK GATE-TRIGGER CURRENT:"

For 1 J.l.s max. (See Fig. 7)GATE POWER DISSIPATION:

Peak (For 10!'s max., IGTM :<:;:4A (peak), (SeeFig. 7) .,Average .. . .

TEMPERATURE RANGE:"Storage . .Operating (Case) .. . .

TERMINAL TEMPERATURE (During soldering):For 10 s max. (terminals and case) .. . .

25--- A25--- A40--- A40--- A

--- See Fig.3 --

---600--- A----300--- A--- SeeFig.4--

----100--- AI!'s

----350--- A2s

12--- A

42--- W

---- 0.75 --- W

---50to150-- °C-- -50 to 110 -- °C

---- 225 ---- °C

* For either polarity of main terminal 2 voltage (VMT2) with reference to main terminal 1 .• For either polarity of gate voltage (VG' with reference to main terminal 1..•. For temperature measurement reference point. see Dimensional Outline.

ELECTRICAL CHARACTERISTICSAt Maximum Ratings and at Indicated Case Temperature (Tc) Unless Otherwise Specified

LIMITS

CHARACTERISTIC SYMBOL For All Types UNITSUnless Otherwise Specified

Min. Typ. Max.

Peak Off-State Current:'Gate open, TJ = 1100 C, VDROM = Max. rated value ............... IDROM - 0.2 4 mA

Maximum On-State Voltage:'For iT = 100 A (peak), TC = 25v C: VTM VT6405 & T6415 Series .... . ...... . .......................... - 1.7 2.5T6404 & T6414 Series ... . ... ..... ..................... - .... - 1.7 2

DC Holding Current:'Gate open, Initial principal current = 500 mA (DC), vD = 12 V,

TC = 250 C ............................................. IHO - 30 90 mAFor other case temperatures ............................... See Fig.6

Critical Rate-of-Rise of Commutation Voltage:'For vD = VDROM, IT(RMS) = rated value, gate unenergized,(See Figs.13 & 14):

Commutating d ildt = 88 AlmsTC = 850 C (T6405 Series) ............................. dvldt 2 - - V/p.s

= 800 C (T6415 Series) ............................. 2 - -Commutating d ildt = 141 Alms

TC = 700 C (T6404 Series) ............................. 2 - -= 650 C (T6414 Series) . . . . . . . . . . . . . ................ 2 - -

Critical Rate-of-Rise of Off-State Voltage:'For VD= VDROM, exponential voltage rise, gate open, TC = 1100 C: dvldt V/p.s

T6405 & T6415 Series .... . ....... . ....................... 30 150 -T6404 & T6414 Series' ....... ... . ....................... 50 200 -

DC Gate-Trigger Current:'t Mode VMT2 VGForvD = 12 V (DC), 1+ positive positive - 20 80

RL =30n, 111- negative negative IGT - 50 80 mATC = 250 C 1- positive negative - 80 120

III + negative positive - 80 120For other case temperatures ................................. See Figs.8 & 9

DC Gate-Trigger Voltage:'t -I IFor vD = 12 V(DC), RL = 30 n, TC = 250 C ................. ..... VGT 2 3 VFor other case temperatures ................ . ............... See Fig. 10

For vD = VDROM, RL = 125 n, TC = 1100 C .................... 0.2 - -Gate-Controlled Turn-On Time:

(Delay Time + Rise Time)For VD= VDROM, IGT = 150 mA, tr = 0.1 J-ls, tgtiT=60A (peak), TC= 250C (See Figs. 11 & 12) .............. , ... - 1.6 2.5 p.s

Thermal Resistance, Junction-to-Case:Steady-State

Press-fit types ...........................................BJ-C

- - 0.8 oC/WStud .................................................. - - 0.9

Transient (Press-fit & stud types) ............................... See Fig.16

, For either polarity of main terminal 2 voltage (VMT21 with reference to main terminal 1.

t For either polarity of gate voltage (VG) with reference to main terminal 1.

10 20 30 40 50 60

FULL-CYCLE RMS ON-STATECURRENT(ITtRMS1]-A

92C5- 17950

CURRENT WAVEFORM: SiNUSOIDALLOAD: RESISTIVE OR INDUCTIVECONDUCTION ANGLE ~ 360"CASE TEMPERATURE: MEASURED AS

SHOWN ON DIMENSIONAL OUTLINES

60o 10 W ~ 40

FULL CYCLE RMS ON-STATE CURRENT fiT(RMS~ - AL' ~ 92C5-17949

LOAD; RESISTIVERMS ON-STATE CURRENT [ITIRMSJ} RATED VALUE AT

600

SPECIFIED CASE TEMP~RATURE

I I I II\ GATE CONTROL MAY BE LOST

500 DURING AND IMMEDIATELY FOLLOWING

",I SURGE CURRENT INTERVAL

>~ I\. OVERLOAD MAY NOT BE REPEATEDt: ~400 '\ UNTIL JUNCTION TEMPERATURE HAS........RETURNED TO STEADY-STATE~!::

I"RATED VALUE."' .... I'f z 300

z'" "- I I0'"~~ ....•..•...." ·00 I

~ u 200

"- ~~ ~ r--t-"

100

I I -t-~ I Ia

I 6 8 10 4 6 8 102

SURGE CURRENT DURATION -FULL CYCLES

<t 120E

IOWr> 100~~>-"CJ~a: a: 80'50u'",,~z>-

9 ~ 60§1-uo MINIMUM GATE RESISTANCE

I I I I I I IUPPER LiMIT OF PERMISSIBLEAVERAGE IDC} GATE POWER IDISSIPATION AT RATED CONDITIONS

-50 -40 -30 -20 -10 0 ;0 20 30 40CASE TEMPERATURE tTC )_OC 92CS-17946

Fig. 9 - DC gate-trigger current vs. case temperature (/- & /:/+modes).

VD :VDROMIT (RMSI: RATED VALUE AT SPECIFIED CASE TEMPERATUREGATE OPEN

I1 I

VD I I1 I

o_LL :_L __I 1 1I 1 1[ 1 I1 1 I

T -iLl -: I" 90% POINT

ITM 1 1 Io-LL-- 1-1----

~ t d -i..-l-- t,I I If---- t g t ---I

It:-vGT 1

L -..---10% POINT

0- ----------92CS-13366R2

Fig. 12 - Relationship between off-state voltage, on·state current,and gate-trigger voltage showing reference points fordefinition of turn-on time (tgt).

---,II

Fig. 14 - Relationship between supply voltage and principal current(inductive load) showing reference points for definition ofcommutating voltage (dv/dtJ.

VD

oj --- ------ --------

wuz 100

w~

~~I -' 80,.'"0,"~5•...I"' .... 60"-w0",

'"•...uZ Iwou •...

Ir'wz"-0E~

4 6 810-3 10-2 10-1 r

TIME AFTER APPLICATION OF RECTANGULAR POWER PULSE-SECONDS92lS-2263RI

RFI FILTERr----l ,----, LOAD

RCA I 39 n I: LF :

TRIAC I I W :: C F :

1022~F I I II 200V I I I

/L J L J

SNUBBER NETWORK FORINDUCTIVE LOADS OR WHENCOMMUTATING VOLTAGE (dv/df)CHARACTERISTIC IS EXCEEDED.

Mounting of press-fit package types depends upon an inter-ference fit between the thyristor case and the heat sink. Asthe thyristor is forced into the heat-sink hole. metal fromthe heat sink flows into the knurl voids of the thyristor case.The resulting close contact between the heat sink and thethyristor caseassureslow thermal and electrical resistances.

A recommended mounting method. shown in Fig. 18. showspress-fit knurl and heat-sink hole dimensions. If thesedimensions are maintained. a "worst-case" condition of0.0085 in. (0.2159 mm) interference fit will allow press·fitinsertion below the maximum allowable insertion force of800 pounds. A slight chamfer in the heat-sink hole will help

center and guide the press-fit package properly into theheat sink. The insertion tool should be a hollow shaft havingan inner diameter of 0.380 ± 0.010 in. (9.65 ± 0.254 mm)and an outer diameter of 0.500 in. (12.70 mm). These di-mensions provide sufficient clearance for the leads andassure that no direct force will be applied to the glass sealof the thyristor.

The press·fit package is not restricted to a single mountingarrangement; direct soldering and the use of epoxy adhesiveshave been successfully employed. The press·fit case is tin-plated to facilitate direct soldering to the heat sink. A 60-40solder should be used and heat should be appl ied only longenough to allow the solder to flow freely.

Type of Mounting ThermalPackage Employed Resistance-oelW

Press-fitted into heat sink. Mini-mum required thickness of heat 0.5sink = 1/8 in. (3.17 mml

Press-Fit Soldered directly to heat sink.(6040 solder which has a melt-ing point of 1~80 C should be 0.1 to 0.35used. Heatinq time should besufficient to cause solder to flowfreely) .

Directly mounted on heat sinkStud with or v.'ithout the use of heat- 0.6

sink compound ..125 \3.17)

-------.I-:~;~:,'~~~~))D'A!

In the United. ~ingdom, E.urope,Middle East, and Africa, mounting-hardware. policies may dIffer; check the availability of all itemsshown with your ReA salesrepresentative or supplier.

DIMENSIONAL OUTLINE FOR TYPEST6404 & T6405 SERIES



MIN. MAX. MIN. MAX.

A - 0.380 - 9.65 -~ 0.501 0.510 12.73 12.95 -.01 - 0.505 - 12.83 2

~2 0.465 0.475 '1.81 12.07 -J 0.825 1.000 20.95 25.40 -M 0.215 0.225 5.46 5.71 1

.T 0.058 0.068 1.47 1.73 -

.Tl 0.138 0.148 3.51 3.75 -


NOTE 2: Outer diameter of knurled surface.


No.1-GateNo.2-Main Terminal 1

Case,No.3-Main Terminal 2

DIMENSIONAL OUTLINE FOR TYPES

T6414 & T6415 SERIES

INSULATINGMATERIAL 7

~:"~:TERMINAL NO.2

REFERENCEPOINT fOR CASE

I TEMPERATUREr_A"3MEASUREMENT

SEATING PLANE


MIN. MAX. MIN. MAX.

A 0.330 0.505 8.4 12.8 -.01 - 0.544 - 13.81 -

E 0.544 0.562 13.82 14.28 -F 0.113 0.200 2.87 5.08 3J 0.950 1.100 24.13 27.94 -M 0.215 0.225 5.46 5.71 1N 0.422 0.453 10.72 11.50 -

.T 0.058 0.068 1.47 1.73 -

.Tl 0.138 0.148 3.51 3.75 -oW 0.2225 0.2268 5.652 5.760 2

NOTE 2: Pitch dIameter of 1/4-28 UNF-2A (coated) threads(ASA B1. 1-19601.


On special request, isolated-studpackage triacs are also available.

Main Terminal 1

(-\. Gate~S.c.~Main Terminal 2

M~11

WARNING:The ReA isolated-stud package thyristors should be han-dled with care. The ceramic portion of these thyristors con-tains BERYLLIUM OXIDE as a major ingredient. Do notcrush, grind, or abrade these portions of the thyristors be-cause the dust resulting from such action may be hazardousif inhaled.

OOCTI3LJI]Solid StateDivision

T8401BT8401DT8401M

T8411BT8411DT8411M

ThyristorsT8421BT8421DT8421M

H-1812 H-1813 H-1814

MTl MTl MTl

L MT2/

Gate .;/ (. Gate.•....MT2 MT2

T8401B T8411B T8421BT840lD T8411D T8421DT8401M T8411M T8421M

Press-fit Stud Isolated-Stud

For Phase-Control and Load-Switching Applications

Features:• di!dt Capability = 300 A!lls• Shorted-Emitter, Center-Gate Design• Low Switching Losses

• Low On-State Voltage at High Current Level,• Low Thermal Resistance

::s: 200 V 400 V 600 VPackage

Press-fit T8401B (410291 T8401D (410301 T8401M (41031)

Stud T8411B (41032) T8411D (410331 T8411M (410341

Iso-stud T8421B (410351 T842lD (410361 T8421M (410371

ReA T8401, T8411, and T8421 series triacs are gate-controlled, full-wave silicon ac switches with integral triggers.They are designed to switch from an off-state to an on-statefor either polarity of applied voltage with positive or negativetriggering voltages.MAXIMUM RATINGS, Absolute-Maximum Values:

For Operation with Sinusoidal Supply Voltage at Frequenciesup to 50160 Hz and with Resistive or Inductive Load.

These triacs are intended for control of ac loads in applica-tions such as heating controls motor controls, arc-weldingequipment, light dimmers, and power switching systems.They can also be used in air-conditioning and photocopyingequipment

T8401B

T8411BT8421B

T8401DT8411DT8421D

T8401MT8421MT8421M

REPETITIVE PEAK OFF-STA1E VOLTAGE:"Gate open, TJ = -40 to 110 C . '0' .

RMS ON-STATE CURRENT (CondUCtIon angle = 360 I:Case Tempelature

T C = 850

C (Press-Fit types) .80

0C (Stud types) .

75 C IIsolated-Stud typeslFor other conditions

PEAK SURGE (NON-REPETITIVE) ON-STATE CURRENT:For one cycle of applied principal voltage

60 Hz (sinusoidal)50 Hz (sinusoidal) ..

For more than one cycle of applied principal voltageRATE OF CHANGE OF ON-STATE CURRENT:

VDM = VDROM,IGT = 300 mA, tr = 0.1 J" (See Fig. 13)FUSING CURREN~ (for Triac Protection):

T J = -40 to 110 C, t = 1.25 to 10 msPEAK GATE-TRIGGER CURRENT:"

For 10 J.LS max. (See Fig. 7)GATE POWER DISSIPATION (See Fig. 7):

Peak (For 10 MS max., IGTM .;; 7 A (peak)AVERAGE

TEMPERATURE RANGE:"Storage.Operating (Case)

TERMINAL TEMPERATURE lOuring solderingl:For 10 s max. (terminals and case) ...............•.

STUD TORQUE:RecommendedMaximum (DO NOT EXCEED) .


• For either polarity of gate voltage (V G) with reference to main terminal 1..•. For temperature measurement reference point, see Dimensional Outline.

----- 60 ---------60 --------- 60 -------- See Fig. 3 ----

---- 600 ---------500 --------- See Fig. 4 ----

LIMITS

CHARACTERISTIC SYMBOL For All Types UNITSExcept as Specified

MIN. TYP. MAX.

Peak Off-State Current:-Gate open, V DROM = Max. rated value . . . . . . . . . . ..... ... ...... IDROM - 0.4 4 mA

Maximum On-State Voltage:- 0

"TM 1.55 1.8 VFor iT = 100 A (peak). TC = 25 C . . . . . . . . . . ...... -

DC Holding Current:-Gate open, Initial principal current:::: 500 mA (de)

° IHO - 20 60vD= 12V.TC=25 <i, . . . . . .. . . .... . ..... .. .....

TC=-40C ............... ... ..... ..... . .... - - 85 mA

For other case temperatures ..... ... ...... See Fig. 6

Critical Rate-of-Rise of Commutation VOltage:-

For vD = V DROM' IT(RMSI = 60 A, eommutatingdi/dt = 32 Alms, gate unenergized. (See Fig. 14); dv/dt

T C =- 75:C (Press-fit types) . . . . . . . . . . . . . . . . . . . ..... . .. . .... 3 10 -VII's

= 65 C (Stud typesl ...... ... . . . . . . . . . . . . 3 10 -= 5SoC (Isolated-stud types) ...... . . . . . . . . 3 10 -

Critical Rate-ot-Rise of Off-State Voltage:-ForvO = V DROM- exponential voltage rise, gate open, T C = 11 aOc: dv/dt

VII'sT8401S,T8411B.T8421B ..... .... 50 200 -T8401D.T8411D.T8421D . . . . . . . . . ........... 30 150 -T8401M, T8411M, T8421M ................................ .... 20 100 -

DC Gate-Trigger Current:-· Mode VMT2 VGFor vD = 12 V (de) 1+ positive positive - 20 75

RL = 300n 111- negative negative - 40 75TC = 25 C ,- positive negative - 40 150

,1,+ negative negative - 100 150

'GT mAMode VMT2 VG

For vD = 12 V (del 1+ positive positive - 35 150R, ~ 30n 111- negative negative - 80 150TC=-40oC ,- positive negative - 100 400

1,,+ negative positive - 280 400For other case temperatures ........ .......... . . . . . . . . . . . . . . . . . See Figs. 8 & 9

DC Gate-Trigger Voltage:-·

1135 IFor vD = 120V (del. RL = 30 n,T C = 25 C ............. ...... .... .... ..... . ....... VGT - 2.8 V

For other case temperatures ..... .... ..... ..... . . . . . .. . . . . . . . . ..... See Fig. 10

Gate-Controlled Turn-On Time:(Delay Time + Rise Time)

For vD = VDROM' 'GT = 300 mA. tr = O.ll's.tgt

iT = 85 A (peak!. TC = 25°C (See Figs. 11 & 15) ....... . . . . . . . . . . . .. ... - 1.2 2.5 I'S

Thermal Resistance, Junction-to-Case:Steady·State

Press-fit types .... ...... .... .. . ..... ..... ..... . .. ..... ....... - - 0.3Stud types ....... ..... .... ...... '" ...... ..... .... .... ....

ReJC- - 0.35

Isolated'stud types .... .... ... .. ...... ..... . .. ..... . .... ..... .. - - 0.4 °C/W

Transient (Press-fit & Stud types)'" ... ........ See Fig. 12

• For either polarity of main terminal 2 voltage (VMT2) with reference to main terminal 1 .• For either polarity of gate voltage (V G) with reference to main terminal 1.

p

~ 110w<r

"~

100

~90>-

~w 80ffi1i0 70~~

60"II" 50

0 20 40 60FULL-CYC:_E RMS ON-STATE CURRENT [ITtRMSI]-A

92C5-22761

«It- 100

~-<rw<r> 80Gfiwe>>-w«z>-<r 60,?Ozw02:~t:

"'~ 4000w"-z-«tz

~20

0.5 I 1.5 2INSTANTANEOUS ON-STATE VOLTAGE (vTl-V

(POSITIVE OR NEGATIVE)

: I ~I ,1i 41I

jll- :' IIIt 4 1fT 'fll'f I :~

-t

81-z ' 'I . 1"Q I il; tl1 H ld~ I .-t !'i:i 100 "0 " ifis ,,l!'" r3' 750 I -1",,1>. r.,'Qi. I"-w

",,'J,,~"'I.- t', 'm

'Iis 50 :'"i; -

! o 180· 360"25f-l- \J

CONDUCTIO'" ANGLE.BI·8m

o 20 40 60FULL~CYCLE RMS ON-STATE CURRENT [IT (RMSU -A

92C5-22760

GATE CONTROL MAY 8E LOSTDURING AND IMMEDIATELY FOLLOWING

w SURGE CURRENT INTERVAL>-

OVERLOAD MAY NOT BE REPEATED~ UNTIL JUNCTION TEMPERATURE HASZ RETURNED TO STEADY-STATE0 RATED VALUE.

~1 '"E~~~500 "'" ~~~400

.y,

0'" SOl;;- Rz'"-" ....::r 300 .....• :::::::::,:::::::

'"200 --~ -100

~~~O~~~~~~~I~EeuRRENT [ITIRMSI]~60A AT

0 SPECIfiED CASE TEMPERATURE

2 4 6 .' 2 4 6 • 2 4 610 102 e 103

SURGE CURRENT DURATION-FULL CYCLES92CS-2:2:762

Fig. 4 - Peak surge on-state current vs. surge current duration.

TRIGGERING MODES; ALL100 ENCLOSED AREA INDICATES LOCUS OF

6 POSSIBLE TRIGGERING POINTS. PULSE DURATIONLIMIT

ISHADED AREAIS TYPICALRESISTANCERANGE

468 468, '0

DC GATE - TRIGGER CURRENT (IGTI-A(POSITIVE OR NEGATIVE 1

'"uz '00j'!'"'"~~ 7,-' 80 ./>-<t0:>~ffi>-or"'>- 60~'" V0",

<t>-u ,/z,'"0 40u>-«''"z --"-0

i 20

0468 466 468

10-3 10-2 10-1 rTIME AFTER APPLICATION OF RECTANGULAR POWER PULSE -SECONDS

92LS-2263RI

Vo

oj --- ------ --------

92CS-17063

Fig. 13 - Rate-of-change of on-state current with time (defining dUdt).

Fig. 14 - Relationship between supply voltage and principal current(inductive load) showing reference pain ts for definition ofcommutating voltage fdv./dtJ.

,I

v I Io I I

o-l-!----:-r---. 'I

1:------ir"90"l.POINT

In•• I I1 I 1

0- ,-- 1-.1-- __

I td ---1 tr l-I 1t---'.,--;

I

-r-~IVGT I

0- t I ::: I~".~~N~ _ _ _ :CS-I3366R2

Fig. 15 - Relationship between off-state voltage, on·state current,and gate-trigger voltage showing reference points fordefinition of turn-on time (tgrl.

~r--'SNUBBER NETWORK FOR INDUCTIVE

lOADS OR WHEN COMMUTATING VOLTAGE(dv/dt) CHARACTERISTIC IS EXCEEDED.

AC INPUT '2<lV '40 V 240 VVOLTAGE 6OH, 6OH, 50 H,

C, O.l/1F O.lI1F O.l/1F

,co V 400 V 400 V

C, 0.1 "F O.lI1F 0111F

'OOV 'OOV 'OOVR, 100k1! rook!! 250kf!.w .W .WRJ 15kH 15k1! 15k!!

l',W .W .WSNUBBER 0.18 0.18 0.18NETWORK Cs O.22"F 0.22"F 0.22"FFOR 60 A 200 V 400 V 400 V(RMSI-IN· 33. 33. 33.OUCTIVE RS 390S! 390 n 390 nlOAD .w .w .w

O.l"F 01 "F O.1"FRFI CF- 'OOV 400 V 400 VFILTER IF- l00"H 2OO,H 2OO,H

T84018 T84010 T84010RCA TRIACS T84118 T84110 T84110

T84218 T84210 T84210

- For Other RMSCunent ••.alues rele. 10 RCAAppllcallon Note AN·474~.

- TYplcal values for Lamp dImmIng C"CUIU

~I O.7475U8.99} DIAr--- O.745~(l8.93)

Fig. 17 - Mounting method for press-fit package types. Press-fittype mounting is nQt recommended for triaes operatingat maximum rated rms current.

In the United Kingdom, Europe, Middle East, and Africa, mounting-hardware policies may differ; check the availability of all itemsshown with your ReA sales representative or supplier,

Fig. 18 - Suggested mounting arrangement for stud and isola ted-stud package types.

Type of Mounting ThermalPackage Employed Retistance QC/W

Press-fitted into heat sink. Minimum required 0.4thickness of heat sink'" 0.25 in. (6.35 mm)

Soldered directly to heat sink. (60·40 solder

which has a melting point of 18SoC should be 0.012 to 0.036used. Heating time should be sufficient to cause For 1 to 3 milPress -Fitsolder to flow freely). thick solder

THIS METHOD RECOMMENDED FOR MAXI· layer

MUM HEAT TRANSFER

Stud Directly mounted on heat sink with or without0.05 to 0.15the use of heat sink compound.

DIMENSIONAL OUTLINET8411B, T8411D, T8411MSTUD

A

,,0 0.751

,,0,J

J,,-,r,-,Tl

.:,T2

NOTE

1 le~d\ JandJl available,,! var,ou$lenglht, For onfor01allon.

contact the ReA Sales Office on your loo;;ale


NOTESMIN MAX MIN. MAX

A - 0.620 - 15.75,,0 0.751 0.760 19.08 19.30

E 0.866 0.872 21.99 22,14

F 0.182 0.192 4.62 4.87

J 6.8 NOM 172.72 NOM 1

J, 6.3 NOM 160.02 NOM 1

N 0.740 I0.760 1879 \19.30

,)1 0.060 0.065 1.52 1.65

01, 0.266 - 6.75 -~'>T2 0.144 - 3.70 -,W 'h-20 NF·2A '/,·20 NF·2A 2

NOTES:,. Leads J and Jl available al various lengths_ For mfo,mahan,

contact the ReA Sales QHice in your loo::ale.

2 VW 's pilch diameter 01 coated threads. REF: Screw Thread

Stilndard 1o. Federal Services, Handbook H 28 Part I.

Recommended torque: 125 inch·pounds

DIMENSIONAL OUTLINETB421B, TB421D, TB421MISOLATED-STUD


NOTES

MIN MAX MIN. MAX.

A 0.710 - 18.03,0, 0.751 0.760 19.08 19.30

E 0.866 0.872 21.99 22,14

F 0.182 0.192 4.62 487

J 6.8 NOM. 172.72 NOM. ,J, 6.3 NOM. 160.02 NOM ,M 0.375 0.385 9.52

I9.78

N 0.740 0.760 18.79 19.30

oT 0,060 0.065 1.52 '65OT, 0.266 - 6.75 -

oT2 0.144 - 3.70 IoT3 0.195 0.205 4.95 5.20

oW ~20 NF 2A 'h-20 NF2A 2

"'----- JI -, -- .,

~J .1

ISOLATING I lMATERIAL ._:1 F N(NOTE 31

IIIIIIIII~

NOTES

1 LeadsJandJl available at varlOUi lengths. Fo. ,"fo,mauon.

COnlaCIthe ReA Sales Office on your locale

2; oW IS pItch dIameter 01 coaled th.eads REF- Screw Thread

Standards 10' Federal SerylCes, Handbook H 28 Part I

Recommended torque: 125 Inch-pounds

3 IWlat'ng malenal (ceramIC) between hell (slUdl and termmal

No J,sbl!ryltlumo.,de.

No.1 - GateNO.2 - Main Terminal 1

Case, No.3 - Main Terminal 2

WARNING: The ceramic of the isolated stud package con-tains beryllium oxide. Do not crush, grind, or abrade thispart because the dust resulting from such action may behazardous if inhaled, Disposal should be by burial.

D\l(]5LlDSolid StateDivision T8440 T8450

Series

H·1713 H-17J4 H·1765

Main Main MainTerminal 1 Terminal 1 Terminal 1,II •~Gate

" Gate Gate

Main ~le'Terminal 2 S Main

Main Terminal 2T8430 Termina12Series T8440 T8450

Series Series

Press-fit Stud Isolated·stud

Press-Fit, Stud, and Isolated-Stud Packages

For 120-V Line Operation - T8430B (40916)-, T8440B (40919)-,T8450B (40922)-

For 240-V Line Operation - T8430D (40917)-, T8440D (40920)-,T8450D (40923)-

For High-Voltage Operation - T8430M (40918)-, T8440M (40921)-,T8450M (40924)-

- di/dt Capability = 300 A/Ils - Low On-State Voltage at High- Shorted-Emitter Center-Gate Design Current Levels- Low Switching Losses - Low Thermal Resistance

These ReA triacs are gate·controlled full-wave silicon ac These triacs are intended for control of ac loads in applica-switches. They are designed to switch from an off-state to an tions such as heating controls, motor controls, arc-weldingon-state for either polarity of applied voltage with positive or equipment, light dimmers, and power switching systems.negative gate triggering voltages. They can also be used in air·conditioning and photocopying

equipment.MAXIMUM RATINGS, Absolute-Maximum Values:For Operation with Sinusoidal Supply Voltage at Frequencies up to 50160 Hz and withResistive or Inductive Load.REPETITIVE PEAK OFF-STATE VOLTAGE:·

Gate open, TJ = -40 to 110° C .

RMS ON·STATE CURRENT (Conduction Angle = 360°):Case temperature

TC = 75°C (Press·Fit types)65°C (Stud types) _..................•.55°C (lsolated·Stud types)


PEAK SURGE (NON-REPETITIVE) ON·STATE CURRENT:For one cycle of applied principal voltage

60 Hz (sinusoidal) . . . ...........•.50 Hz Isinusoidal) . . . .


RATE·OF-CHANGE OF ON·STATE CURRENT:VDM = VDROM' IGT = 300 mA. tr = O.I"s (See Fig. 13)

FUSING CURRENT (for Triac Protection):TJ = -40 to 11(fC, t = 1.25 to 10 ms ........•....

PEAK GATE-TRIGGER CURRENT: •For 10ps max. (See Fig. 7)

GATE POWER DISSIPATION:Peak (For lO"s max., IGTM ~ 7A (peak). (See Fig. 7) ......•...Average .

TEMPERATURE RANGE:.Storage .Operating (Case) .

TERMINAL TEMPERATURE (During soldering):For 10 s max. (terminals and case)

Formerly ReA Dav. Nos. TA7752-TA7757, and TA7937-TA7939, respectively.

• For either polarity of main terminal 2 voltage (VMT2) with reference to main terminal 1.-For either polarity of gate voltage (VG) with reference to main terminal 1."For temperature measurement reference point, see Dimensional Outline.

T8430B T8430D T8430MT8440B T8440D T8440MT8450B T8450D T8450M

VDROM 200 400 600 V

ITIRMSI

80---- A80---- A80---- A

See Fig. 3

ITSM

---- 850 ---- A---- 720 ---- A

See Fig. 4

di/dt--- 300 ----Ai"s

12t---- 3600---- A2s

IGTM7 A

00

PGM 40 W ~PG(AV) 0.75--- W .g

C1l

Tstg -- -40 to 150 --- °c ~TC -- -40 to 110--- °c ~TT

c:;.0--- 225 --- °c =:3;-l~.

11-73

CRARACIERISiiC ::>YMtjULOTHERWISE SPECIFIED

v, ..•, ,~

MIN. TYP. MAX.

Peak Off-State Current:'

Gate open, TJ = 110°C, VoROM = Max. rated value. IDROM - 0.4 4 mA

Maximum On-State Voltage:'For iT = 200 A (peak), T C = 25°C ...... VTM - 1.7 2 V

DC Holding Current:'Gate open, Initial principal current = 500 mA (de),vD = 12V:

TC = 25°C ...... ....... IHO - 20 60 mA= _40°C ... ............. - - 85

For other case temperatures. See Fig. 6

Critical Rate-of-Rise of Commutation Voltage:'

For vD = VDROM, ITIRMS) = 80 A, eommutatingdi/dt = 42 Alms, gate unenergized, ISee Fig. 14):

T C = 75°C (Press·fit types) . 3 10 -= 65°C (Stud types) .. .... dv/dt 3 10 - V//ls= 55°C (lsolated·stud types) ....... 3 10 -

Critical Rate-of·Rise of Off-State Voltage:'For vo = VoROM, exponential voltage rise, gateopen, TC = 110°C:

T8430B, T8440B, T8450B . . . . . . . . . . . . . . . . . . 50 200 -T8430D, T8440D, T8450D . ........ , . dv/dt 30 150 - V//lsT8430M, T8440M, T8450M. 20 100 -

DC Gate-Trigger Current:'. Mode VMT2 VGFor vD = 12 V (de) 1+ positive positive - 20 75

RL = 30 n 111- negative . negative - 40 75TC = 25°C 1- positive negative - 40 150

111+ negative negative - 100 150

IGT mA

Mode VMT2 VGFor vD = 12 V (de) 1+ positive positive - 35

I150

RL = 30n 111- negative negative - 80 150TC = -40°C 1- positive negative - 100 400

111+ negative positive - 280 400For other case temperatures See Figs. 8 & 9

DC Gate- Trigger Voltage:'.

I IFor vD = 12 V (de), RL = 30 n,TC = 25°C .....

VGT- 1.35 2.5 ·V

For other case temperatures . . . . . . . . . . . . . See Fig. 10

Gate·Controlled T Jrn-On Time:(Delay Time + Rise Time)

For vD = VDROM,IGT = 300 mA, tr = 0.1 /lS,iT = 112 A (peak), TC = 25°C ISee Figs. 11 & 151 tgt - 1.2 2.5 J.fS

Thermal Resistance, Junction-to-Case:Steady·State

Press-fit types. .... .... .............. - - 0.3Stud types. . . . . . . . . . . . . . . . . . . ROJC - - 0.4 °C/WIsolated-stud types ............... ..... - - 0.5

Transient (Press-fit & Stud types) See Fig. 12

CURRENT WAVEFORM: SiNUSOIDALLOAD: RESiSTIVE OR INDUCTIVECONDUCTION ANGLE : 3600

CASE TEMPERATURE: MEASURED ASSHOWN ON DIMENSIONAL OUTLINES

CONDUCTION ANGLE,SI +sm

20 40 60FULL-CYCLE RMS ON-STATE CURRENT ~T(RMSU-A

I-

~~~200a~",,,,•....w _<l Z __

~ gs 150 .. __z w _. ---~ ._.~ _.0> .__.~~ .~:; ---00100 .. -_ ..wo. ....z -- _ -::

~ ::----

~ 50 ~ :d~

o 0.5 I 1.5 2 2.5

INSTANTANEOUS ON-STATE VOLTAGE (vr)-V(POSITIVE OR NEGATIVE)

CURRENT WAVEFORM: SINUSOlOALLOAD: RESISTIVE OR INDUCTIVECONDUCTION ANGLE : 3600

~ 125Z

°>=~ 100::lo'" 75~i''" 50

~~ 25

--;:;~+:::::o 20 40 60 80

FULL-CYCLE RMS ON-STATE CURRENT ~T(RMS~-A

GATE CONTROL MAY BE LOSTDURING AND IMMEDIATELY FOLLOWING

'" SURGE CURRENT INTERVAL.I-

~OVERLOAD MAY NOT BE REPEATED

'" UN.TIL JUNCTION TEMPERATURE HASRETURNED TO STEADY-STATE

° RATED VALUE.

"'''' ~>,

"-~~'" I- ~,&~«I- '\j~'Zz'"

~0",Z'" "'--"~u ."'" •.•..~ 3

'" ...............'"'" 20C"- LOAD; RESISTIVE

RMS ON-STATE CURRENT [ITlRMSJ]' 80A AT

100 SPECIFI ED CASE TEMPERATURE

MINIMUM GATE RESISTANCE1 I II 1 I

UPPER LIMIT OF PERMISSIBLEAVERAGE (DC) GATE POWERDISSIPATION AT RATED CONDITIONS

2468 468I 10

DC GATE - TRIGGER CURRENT {IGT}-A(POSITIVE OR NEGATIVE)

W II .1~ 100 'I -rW~a~ I y' I

I1-' 80 [7>-<[ I0"<[00 1/'1 IWW•...I"' .... 60~w I V ! I0'"<[

IIII•...u IV I IZIWo 40U •... II00' ).-WZ I--" I 110.0

E 201 II IZ~

0 I II I468 468 468

10-3 10-2 10-1 I

TIME AFTER APPLICATION OF RECTANGULAR POWER PULSE-SECONDS92LS-2263RI

II I

Vo I II I

o_LL LL __I I II I II I II I I

T-£': I" 90% POINT

ITM I I I

o-.LJ- __ ,-i---~'d -i--L-.,I I II--- 'Ol--i

If:-VGT I

L .--10% POINT

0- - - --------92CS-13366R2

Fig. 15 - Relationship between off-state voltage, on-state current,and gate-trigger voltage showing reference points fordefinition of turn-on time (tgt).

vO~~Y-_J_-\i7---~--/~I I

I III COMMUTATINGI dl/dt

III

Fig. 14 - Relationship between supply voltage and principal current(inductive load) showing reference points for definition ofcommutating voltage fdv/dtJ.

~I 0 7480( 19 00)r-- 07450(18 92) OIA

Mounting ot press-tit package types depends upon an inter-ference fit between the thyristor case and the heat sink. Asthe thyristor is forced into the heat·sink hole. metal from theheat sink flows into the knurl voids of the thyristor case.Theresulting close contact between the heat sink and the thyris·tor caseassures low thermal and electrical resistances.

A recommended mounting method, shown in Fig. 16. showspress-fit knurl and heat-sink hole dimensions. If these dimen·sions are maintained. a "worst·case" condition of 0.0085 in.(0.2159 mm) interference fit will allow press·fit insertionbelow the maximum allowable insertion force of 800pounds. A slight chamfer in the heat·sink hole will help

Table I - Case-ta-Heat-Sink Thermal Resistance for DifferentMounting Arrangements.

PackageType of Mounting Thermal

Employed Resistance- 0 C/W

Press-fitted into heat sink. Mini-mum required thickness of heat 0.4sink = 0.25 in. (6.35 mml

Soldered directly to heat sink.Press·Fit (6040 solder which has a melt-

ing point of 188°C should be 0.15 to 0.3used. Heating ·.ime should besufficient to cause solder toflow freely).

Directly mounted on heat sinkStud with or without the use of heat- 0.2 to 0.4

sink compound.

cenler ana gUloe Ine preSS-TlI pacKage proptmy IfllU lilt: flt::i:H

sink. The insertion tool should be a hollow shaft having aninner diameter of 0.575 in. (14.60 mm) and an outer diam-eter of 0.850 in. (21.59 mm). These dimensions providesufficient clearance for the leads and assure that no directforce will be applied to the glassseal of the thyristor.

The press-fit package is not restricted to a single mountingarrangement; direct soldering has been successfully em-ployed. The press-fit case is tin-plated to facilitate directsoldering to the heat sink. A 60-40 solder should be used andheat should be applied only long enough to allow the solderto flow freely.

DIMENSIONAL OUTLINE FOR T8430 SERIESPRESS-FIT


NOTESMIN, MAX. MIN, MAX.

A 0.454 11.5300 0.751 0.760 19.08 19.30.0, - 0.7585 - 19.13 2J - 1.53 - 38.86M 0.375 038'; 9.52 9.78 ,.T 0060 OJ)65 1.52 1.65.T, - 0.193 - 4.90

1. Contour and an..,...lar orientation of these terminals isoptional.

2. Outer diameter of knurledsurlace.

DIMENSIONAL OUTLINE FOR T8440SERIES

STUD


NOTESMIN MAX. MIN. MAX

A - 0.591 - 15.01

00' 0.751 0.760 1908 19.30

E 0.866 0.872 21.99 22.14F 0.182 0.192 4.62 4.87 3

J - 1.63 - 41.40M 0.375 0.385 9.52 9.78 ,N 0.740 0.160 18.79 19.30

0' 006<l 0.065 1.52 1.65

0', - 0.193 - 4.90

OW '.',-20 NF-2A ',1,-20 NF-2A ,NOTES

1. Contour and angular orientation of these terminals isoptionaL

2. </JW is pitch diameter of coated threads. Ref: ASA 81_1·1960. Recommended torque: 125 inch-pounds.

3. A chamfer or undercut on one or both ends of hexagonalportion is optional.

No.1 - GateNo.2 - Main Terminal 1

Case,No.3 - Main Terminal 2

DIMENSIONAL OUTLINE FOR T8450 SERIESISOLATED-STUD

ISOLATINGMATERIAL(NOTE 4)

SYMBOL ~I~NCH:'~XMILLIMETERS

NOTESMIN MAX

A 0.789 2004

0, 0,151 0760 '908 19,30

E 0866 0872 21,99 22.14F 0182 0.192 4,62 4.87 3J 1.85 46.99

M 0375 0385 952 9.78 ,M, 0375 0385 952 978 ,N 0740 0760 1879 1930, 0060 0065 152 165

" 0.193 490

" 0195 0205 495 ~20•• W '/,20 NF-2A '-20 NF-2A ,

NOTES

1. Contour and angular orientation of these terminals isoptional.

2. ¢W is pitch diameter of coated threads. REF: ASA B1,1·1960. Recommended torque: 125 inch-pounds.

3. A chamfer or undercut on one or both ends of hexagonalportion is optional.

4. Isolating material (ceramic) between hex (stud) andterminal No.3 is beryllium oxide.

WARNING: The ceramic of the isolated stud package con-tains beryllium oxide. Do not crush, grind, or abrade thispart because the dust resulting from such action may behazardous if inhaled. Disposal should be by burial.

Silicon Controlled Rectifiers (SCR's)

File No. 654

S2062 Series

4-Ampere Sensitive-GateSilicon Controlled Rectifiers

Features:• Microampere gate sensitivity• Minimum gate current specified for the S2OO2series• 60()..Vcapability• 4-A (rms) on-state current ratings• 35-A peak surge capability• Glass-passivated chip for stability• Low thermal resistances• Surge capability curve

The S20OO, S2061, and S2062 series. are sensitive-gatesilicon controlled rectifiers designed for switching ac and dccurrents. These SCA's are divided into the three different

series according to gate sensitivity. The types within eachseries differ in their voltage ratings; the voltage ratings areidentified by suffix letters in the type designations. (Cont'don pg. 2)

MAXIMUM RATINGS, Absolute-Maximum Values:NON-REPETITIVE PEAK REVERSE VOLTAGE

RGK=1000n,TC=-40tollO"C ...........•... VRSXM}

NON-REPETITIVE PEAK OFF-5TATE VOLTAGERGK=1000n,TC=-40toll0'C VOSXM

REPETITIVE PEAK REVERSE VOLTAGERGK=1000n,TC=-40toll0'C ..........••...

REPETITIVE PEAK OFF-STATE VOLTAGERGK = 1000 n, T C = -40 to 110'C

ON-5TATE CURRENT:Conduction angle = 180', T C = 85'C

Average ac value .. . . . . . . . . . . . . .RMS value .

DC operation . . . . . . . . . . . . . . . .

PEAK SURGE (NON·REPETITIVE) ON-sTATE CURRENT:For one cycle of applied principal voltage

60 Hz (sinusoidall ....................•. 'TSMFor more than one cycle of applied principal voltage .....

PEAK GATE CURRENT (t=10/,sec) ....

PEAK GATE REVERSE VOLTAGE

RATE OF CHANGE OF ON-5TATE CURRENT:VOM = VOROM' IGT = 1 mA, tr = 0.5/,s, T C = 110'C

GATE POWER DISSIPATION:PEAK FORWARD (tor 10 IlS max.l ......••...... PGMAVERAGE (averaging time = 10 ms max.l ....•...... PG(AV)

TEMPERATURE RANGE:Storage . . . . . . . . . . .. TstgOperating (case)' T C

TERMINAL TEMPERATURE (During soldering):For 10 s max. T T

'TIAV)'TIRMS)'T(OC)

2.5 A

4 A

2.75 A

35 A

See Fig. 60.2 A

6 V

100 A//'s

0.5 W

0.1 W

-40 to +150 'c-40 to +110 'c

250 'c

All types in each series utilize the JEDEC TO-220ABpackage. Upon request. each type is available in either of twovariants of the TO-220AB package. For information on thesepackage variations. contact the RCA Sales Office in yourlocale.

I These thyristors have microampere gate-current requirementswhich permit operation with low-level logic circuits. Theycan be used for lighting. power-switching. and motor-speed

Icontrols. and for gate-current amplification for driving largerSCA's.

LIMITS

FOR ALL TYPES

CHARACTERISTIC SYMBOLUNLESS

UNITSOTHERWISESPECIFIED

MIN. TYP. MAX.PEAK OFF-STATE CURRENT:

Forward, Vo ~ VORXM' RGK = 1000 nIORXMTC = 2SoC . . . . . . . . - 0.1 10

T C = 110°C. - 10 100

Reverse, VR - VRRXM' RGK - 1000 n I'A

T C = 2SoC . . . . . . . . IRRXM - 0.1 10TC = lOOoC . - 10 100

INSTANTANEOUS ON-STATE VOLTAGE:For iT = 4 A and T C = 2SoC ISee Fig. 161 . vT - 1.2S 2.2 V

DC GATE TRIGGER CUF;lRENT:VO=12Vldcl. RL = 30 n. TC = 2SoC:

52060 SeriesIGT

- - 20052061 Series SOO

I'A- -52062 Series 100 - 2000

For other case temperatures. See Figs. 10.11.12

DC GATE TRIGGER VOLTAGE:

I IVo = 12 V Idcl, RL =30n.TC=2SoC VGT - O.S 0.8 V

For other case temperatures . See Fig. 14

INSTANTANEOUS HOLDING CURRENT:RGK ~ 1000 n, Vo = 12 V, IT IiNITIAL) = SO mA, T C = 2SoC:

52060 Series :iH - 1.7 3 mA

52061 Series - 3.9 652062 Series - 6 10

LATCHING CURRENT:RGK = 1000 n, Vo = 12 V. TC = 2SoC:

S2060 Series Ii GT = 200 J.lAI iL - 1.8 4 mA52061 Series IiGT = SOOJ.lAI - 2.S 8S2062 Series IiGT = 2000 J.lAI - 8 12

CRITICAL RATE OF RISE OF OFF-STATE VOLTAGE:Vo = VORXM' RGK = 1000 n, dv/dt VII'sExponential rise, T C :: 110°C S 8 -

GATE·CONTROLLEO TURN·ON TIME:

Vo = VORXM' iT = 1 A. RGK = 1000 n. tgt I'SIGT = 1 mA. rise time = 0.1 /-ls.• T C = 25°C - 1.7 2.S

CIRCUIT COMMUTATEO TURN-OFF TIME:Vo = VORXM' iT = 1 A. RGK = 1000 n.

tqPulse Duration"" 50 1J5, dv/dt ""5 V IllS,I'S

di/dt = -10 AIl's. IGT = 1 mA at turn on, T C = 1lOoC - 30 100

THERMAL RESISTANCE:Junction-ta-Case .

3.SR/iJC - - °C/WJunction-ta-Ambient . R/iJA - - 60

I IVDSXM

IVDRXM

, I,VRSXM -----i r-- VRRXM

.uI

?w~~~§ 75

0-ZWii;

?i 50w~'"~~ 25~:>~x4~

CURRENT WAVEFORM: SINUSOIDALLOAD: RESiSTIVE OR INOUCTIVECONDUCTION ANGLE:.180°CASE TEMPERATURE MEASUREO AT POINTINDICATED ON DIME NSIONAL OUTLINE

'"I~"0

Q.

Z

90-

~~~0

5'":i'~~;,0

0 0.5 I 1.5 2 2.5

DC ON STATE CURRENT [ITIDC~-A

25 CURRENT WAVEFORM: SINUSOIDALLOAD; RESISTIVE OR INDUCTIVECONDUCTION ANGLE: 1800

CASE TEMPERATURE MEASURED AT POINT INDICATEDON DIMENSIONAL OUTLINE

'"I7~

or0~z0

~i:j0

5'":i'w0-

~;,0

0

GATE CONTROL MAY BE LOSTDURING AND IMMEDIATELYFOLLOWING SURGE-CURRENTINTERVAL

OVERLOAD MAY NOT BE REPEATEDUNTIL JUNCTION TEMPERATUREHAS RETURNED WITHIN STEADY-STATE RATED VALUE

I

+- 1000 SINGLE-HALF-SINE-WAVE PULSE (NON-REPETITIVE)

ffi • REAPPLIED BLOCKING VOLTAGE:O

~6 IGT: ImA SQUARE PULSE, 10,u.sDURATION

CASE TEMPERATURE (TCl:::2S'"C ,'" 4 ~~

U~SA~E~A~EA!<it; ~~•..•.•.......•,

2OF OPERATION

z~:::! :--0

;;; 0-" r---...2: :>11: I-:--...to 100 -?~0- z •......'"'" • Q"-I !<i •......~ ~ 6

1\'SAFE-AREA r-----....

¥ ~ 4

OF OPERATION

PEAK

'" SURGE'"~ 2

CURRENT0- --.L

~ -I PULSE l.-i!' 10 DURATION

10 DC OFF -STATE VOLTAGE {Vo)::: 12 V8 LOAD RESISTANCE (RL):::30n.

:; 6 CASE TEMPERATURE (TCl::: 25°C-;:.'" 4

2:'"'"'" 2'::;0>

'"'" I'"'" •~'"

60-

'" 4'"~:>X 2'":>

0.1

10~ DC OFF-STATE VOLTAGE IVO):::12V

'" 6LOAD RESISTANCE (RL):::30n

"-CASE TEMPERATURE (TC):::25'"C,

-;:.4g

0-Z

'" 2"~ ""-'"'" 10''"'" •ii'0- 6

'"!<i 4

'" ..•.....•

~ ,:> l-X 2'":>

J<i6810 468100

GATE PULSE DURATION-fl-s

'""-I0-

'"':::! 4000-

~'"i3'"'":3ii'0-

'"~u

"

2 4 6 8 !QOO.GATE-TO- CATHODE RESISTANCE (RGK}-D

DIMENSIONAL OUTLINE(JEDEC TO-220AB)

CHAMFERLr=-:-~OPTIONAL "SEATING PLANE •. L~I f

IIF TEMPERATURE

MEASUREMENTPOINT

No. 1 - CathodeMounting Flange, No.2 - Anode

No.3 - Gate

10. CASE TEMPERATURE« ~(Tc}a25·C / /I • I ,/-;:.- 2

1/ /I-

~ I~ •::> •u • ¢~ll'"I- ~1! 2 f-#,~

•... ~/0.10 •<g • I:il •z /1!

2z

~ 001z

05 I 1.5 2 2.5

INSTANTANEOUS ON-STATE VOLTAGE (vTI-V92C5-19841

'NCHES MilLIMETERS


A 0.160 0.190 4.07 4.82b 0.025 0.040 0.64 1.02b, 0.012 0.020 0.31 0.51b2 0.045 0.055 1.143 1.397D 0.575 0.600 14.61 15.24E 0.395 0.410 10.04 10.41El 0.365 0.385 9.28 9.77E2 0.300 0.320 7.62 8.12. 0.180 0.220 4.57 5.58., 0.080 0.120 2.03 3.04F 0.020 0.055 0.51 1.39H 0.235 0.265 5.97 6.73l 0.500 - 12.70 -II - 0.250 - 6.35.p 0.141 0.145 3.582 3.683Q 0.040 0.060 1.02 1.52

Z 0.100 0.120 2.54 3.04

In the United Kingdom, Europe, Middle East, and Africa, mounting-hardware policies may differ; check the availability of all itemsshown with your ReA salesrepresentative or supplier.

ffil(]5LJDSolid StateDivision

Thyristors2N3228 2N35292N3525 2N41012N3528 2N4102

All-Diffused SCR's for Low-Cost Power-Control andPower-Switching Applications

RCA 2N322S*, 2N3525*, 2N4101 *, and 2N352S·,2N3529·, and 2N4102· are all-diffused, three-junction,silicon controlled-rectifiers (SCR's·) intended for use inpower-control and power-switching applications.

Types 2N322S, 2N3525, and 2N4101 use the JEDECTO-66 package and have a blocking voltage capability ofup to 600 volts and a forward current rating of 5 amperes(rms value) at a case temperature of 750C.

Types 2N352S, 2N3529, and 2N4102 use the JEDECTO-S package and have a blocking voltage capability ofup to 600 volts and a forward current rating of 2 amperes(rms value) at an ambient temperature of 250C.

• Formerly Dev. Types TA1222, TA1225, and TA2773, re-spectively.

• Formerly Dev. Types TA2597, TA2617, and TA2774, re-spectively.

.•. The silicon con trolled-recti fier is also known as a reverse-blocking triode thyristor.

• Designed especially far high-valume systems

• Readily adaptable far printed-circuit baards and metalheat sinks

• Low switching losses

• High di/dt and dv/dt capabi lities

• Shorted emitter gate-cathode construction

• Forward and reverse gate dissipation ratings

• All-diffused canstruction -assures exceptional uni-farmity and stability of characteristics

• Direct-soldered internal construction -assures ex-ceptianal resistance to fatigue

• Symmetrical gate-cathade canstruction - provides uni.form current density, rapid electrical conduction, andefficient heat dissipation

• All-welded construction and hermetic sealing

• Law leakage currents, both forward and reverse

• low forward voltage drop at high current levels

• Low thermal resistance

••.c~ if,-~~

2H3228 2H3S282H3S2S 2H3S292H4101 2H4102

JEDEC TO-66 JEDEC TO-8

Average AverageCurrent __Forward Forward

Voltage Amperes Amperes, 3.2 1.3

For 120-Valt

Line 2N3228 2N3528Operation

For 240-Volt

Line 2N3525 2N3529

Operation

For High-Valtage

2N4101 2N4102Power

Supplies

Abso/ute-Maximum Ratings, for Operation with Sinusoidal AC Supply Voltageat a Frequency between 50 and 400 Hz, and with Resistive or Inductive Load

Transient Peak Reverse Voltage(Non·Repelitive), vRM(noo·rep)' .•..................

Peak Reverse Vollage (Repetitive), vRM(replb ...•........

Peak Forward Blocking Voltage(Repelitive), vFBOM(replc .. . ....

Forward Current:

For case temperature (T C) of •. 75°C,and unit mounted on heat sink-

Average DC value at a conductionangleot 180', I FAY<! ...•........•.

RMS value, IF RMS" .For other conditions, See Fig. 8

For free-air tempera~ure (T FA) of 25°C,and with no heat sink employed-

Average DC value al a conductionangle of 180", IFAY<! .....•.

RMS value, I FRMS' ..............•••••••••••.•

For other condlhons, See Fig. 9.

Peak Surge Current, iFM(Surgej!:For one cycle of applied voltage ...............•...•For more than one cycle of applied voltage.. . .........•

Sub-Cycle Surge (Non·Repetitivel 111gFor a period.of lms 10 8.3ms .......••••••••••..•.•

~~~d~h.C.h~~~.O.'.F.o~a.r~~~r.r~n.t,.......•..•..•..•..•

VFB = vBoo(min. value)IGT = 100mA, 0.51' s rise time

(See waveshapes of Fig. I)Gale Power·:

Peak, Forward or Reverse, for lOj.Ls duration, PGMj ....•••(See Figs. 5 and 6)

Average, PGAyk ............•..•.•......•....•

Tempelature:Storage, Tstg •.........•.•..•....•...•....•...Operating (Casel, T C

CONTROLLED·RECTIFIER TYPES UNITS

2N3228 ] 2N3525 j2N4101 2N3528 T 2N3529 I 2N4102

330 660 700 330 660 700 volts

100 400 600 100 400 600 valls

600 600 700 600 600 700 volts

- - - 1.3 1.3

- - - 1.0 1.0

60 60See Fig. 13 See Fig. 13

15 15

100 100

ampere2second

amperes/microsecood

0-1---------------'F

i -f---!0- - _T~ -~- - - - - - - - - - -- - -_

...: \--- tl

92CS-I3363RI

CRITICAL 0,/01 ~

/

fi:o 63 VFBd't . 1

t= RC

_ ..~"'-._. _ ..._ .._- __ ••• n _____ - •• __ •••• _n ... _ .. •......... ~2N3228. 2N3528 2N3525. 2N3529 2N4101. 2N4102

Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.

Forward Breakover Voltage, vBOOm;AI Te: .Ioooe . ........... 100 - - 400 - - 600 - - volts

Peak Blocking Current, at T C :: • 1000e:Forward, IFBOMn. . . . . . . . . . . . . ....... . . . . . . . . . .. ... - 0.10 1.5 - 0.10 3.0 - 0.40 4.0 mAVFBOP: 'BOO(min. value)Reverse, IRBOMQ ..... ............ . . .. . . .. . . . . . . . . . . . - 0.05 0.75 - 0.10 I.5 - 0.10 1.0 mAVRBOP: vRMUep) value

Forward Voltage Drop, vFrAt a Forward Current of 30 ampeles and a TC =: +250C (See Fig. II). - 1.15 1.8 - 1.15 1.8 - 1.15 1.8 volts

DC Gale-Trigger Current, IGTs

AI Te: .150e (See Fig. 5). ............................ - 8 IS - 8 IS - 8 15 mAldc)Gale·Trigger Vollage, VGTI

AI Te: .150e1See Fig. 5). . . . . . . . . . .... . . . . . . . . .. . . ... - 1.1 1.0 - 1.1 1.0 - 1.1 1.0 volts(dc)Holding Current, iHOOu

AI Te: .150e .. . . . . . . . . ..... . . . . . . . . . . . . - 10 10 - 10 10 - 10 10 mACritical Rate of Applied Forward Voltage,

Critical dv/dtv. ..... .... ....... 10 100 - 10 100 - 10 100 - vollslVFB =: vBOO(min. value), exponential rise, microsecondTe: .Ioooe (See waveshape of Fig. 1)

Turn·On Time, tonW, (Delay Time + Rise Time) . . . . . . . .. . . . .. . 0.75 I.5 - 0.75 I.5 - 0.75 I.5 - microsecondsVFB =: vBOO(min. value), iF '" 4.5amperes,IGT: 100mA. O.l!,s rise lime, Te: .150e

(See wave shapes of Fig. 3)

Turn·Off Time, toffX, (Reverse Recovery Time + Gate Recovery Time) ... - 15 50 - 15 50 - 15 50 microsecondsiF"" 2 ampefes, 50 p. s pulse width, dVFB/dt =: 20 vip. s,dr, 'dl: lOA'!'s. IGT: 100mA. Te: .750e

(See waveshapes of Fig. 4)2N3228. 2N3525. 2N4101 2N3528. 2N3529, 2N4102

Min. Typ. Max. Min. Typ. Max.

Thermal Resistance:Junction-to·case. ............. .. .......... ........ - - 4 - - - °ClYIJunctlon·to·ambient. . . . . . . . . . . . . . ... - - - - - 40 °C/W

II II' 'I'I Ik-----I

II VRB_____ :----.iIII

I I-t------I

------0

It g r -----..j

Itoff~

dir Idt \

~\\

SHADED AREA INDICATES LOCUSOF POSSIBLE TRIGGERING POINTSFOR VARIOUS TEMPERATURES.

I IPERMITTEO PULSE WIOTHS

FOR INDICATED PEAK ...,FORWARD GATE POWER

"-II "-1•• -

Ips

•..•.'£.r- ~~N~~r~tJEI NTD~~GAt;.EtD MAXIMUM GATE

10014 ~'i>\'i>

JUNCTION TEMPERATURE (T I RESISTANCE '\.ms

V~ •..~T " 40·C ~~~

- - ~\~'+'5"C /' STEADY

,.- f/

+ 100·C,/ STATE

:.> .....AVERAGE GATE

DISSIPATION LIMIT0.5 WATT• tlWC

TJ· -40·C

+25"CMAXIMUM GATE TRIGGER ' ,-CURRENT FOR INDICATED

MAXIMUM VOLTAGE AT WHIcH JUNCTION TEMPERATURE IT J)NO UNIT WILL TRIGGER FOR

IT J ~ + 100·C I I III I I• • • • • • • • • •

II>~0

10>

•'"~~>

'"00:z:•.."0,0•..

1.0,'" ••..""

The construction of the I';ate-cathode junction

used in these devices provides a larl';e peripherycenter I';ate. These devices also employ shorted-

emitter construction which removes restrictions onboth forward and reverse peak I';ate voltlil';e and peak

I';ate current. Limitinl'; values of volt-ampere products

for different I';ate pulse widths are shown in Fil';. 5.

These limits should be adhered to when desiW1inl';

pulse tril';l';er circuits for maximum tril';ger pulse widthsand peak power dissipation. The volt-ampere productsin the reverse direction shown in Fig. 6 should be

used to determine limitations for reverse gate tran-sients or reverse gate pulses if present. In all cases,

total average gate dissipation, both forward and re-

verse, should not exceed the average I';ate dissipation

rating (PCA Y) of 0.5 WBtt.

Turn-on times for different gate currents are shownIn Fili. 7. These curves may be used to determine the

required width of the liate trililier pulses. It is only

necessary to maintain the liate trililier pulse until the

malinitude of the forward anode current has reached

the latching current value. However, conservative

desil';n requires that the liate trililier pulse width beat least equal to or somewhat lireater than the device

turn-on time. Some applications may require widerliate pulse widths for proper circuit operation.

[ 2 3AVERAGE FORWARD CURRENT (IFAV)--AMPERES

92C5-12750

RATING CHART (FREE-AIR TEMPERATURE) FOR TYPES2N3528, 2N3529, AND 2N4102

uo 1---r-l'80-CONDUCTION

ANGLE

0.25 0.5 0.75 I 1.25 1.5 1.75

AVERAGE FORWARD CURRENT (IFAV}-AMPERES

92CS-12749RI

CASE TEMPERATURE (TC)::25° CSUPPLY FREQUENCY"'60 Hz SINE WAVE

30

NATURAL COOLING.SINGLE - PHASE OPERATION.CONDUCTION ANGLE: 1800

CASE MOUNTED DIRECTLY ON HEAT SINK.HEAT SINK: 1/16 THICK COPPER WITH

A MAT BLACK SURFACE AND THERMAL EMISSIVITY OF 0.9.

DIMENSIONAL OUTLINE FOR TYPES2N3228, 2N3525, AND 2N4101

JEDEC No. TO.66

.500

.470 --l• rOI• I.340=-.-1.250 SEATING PLANE

'6 to MIN [ .075.~ .050

* DETAILS OF OUTLINEIN THIS ZONE QOTIONAL

SUPPLY FREQUENCY = 60 Hz SINE WAVELOAD = RESISTIVE

:~~~r~~1¥6::AA:D ~~~~~~~ rIOFLA~~~EM~~~~~~-r:~I~~ttutATED VALUE

'" 60" I'"'"'" \ '" I 1Q.

:> 50 \,"""I1 40

}.1\ 2N3228.

" I I\. / 2N3525.....30 ~r'OIl- I 1

~I I I'}. I""-.'" 20a _2N3528.1' 1 TC "75.C

t!!~ 2N352~1 ' "'-., I Tl'"

10 -~Ni'9211 I r- TFA" 25·C" I I111 I I Ii!' ° , 4 6 • 2 4 6 • 2 4 6 •

DIMENSIONAL OUTLINE FOR TYPES2N3528, 2N3529, AND 2N4102

JEDEC No. TO·8

3 PINS.030 t.003

DIA.

92CS-9963R3

TERMINAL DIAGRAM FOR TYPES2N3228, 2N3S2S, AND 2N4101

ANODETERMINAL

(CASEl

PIN 1: GATE

PIN 2: CATHODE

CASE: ANODE

TERMINAL DIAGRAM FOR TYPES2N3S28, 2N3S29, AND 2N4102

[~JPIN 1: CATHODEPIN 2: GATEPIN 3: ANODE

(CONNECTEDTO CASE)

oocramSolid StateDivision

4.5- Ampere SiliconControlleo RectifiersFor Capacitive-Discharge SystemsFor Low-Voltage Operation - 52400A (40942)*For 120-V Line Operation - 52400B (40943) *For 240-V Line Operation - 52400D (40944) *For High-Voltage Operation - 52400M (40945)*~P~~~) --] 1 ~~~~,ECASE)

\CATHODEIPIN 1)

Features:• 200-A surge current

capability• Low switchi ng losses• High di/dt and dv/dt

capabilities

• Shorted-emitter gate-cathode construction

• Forward and reverse gate-dissipation ratings

• Low forward voltage dropat high current levels

These RCA types are all-diffused silicon controlled rectifiers(reverse-blocking triode thyristors) designed for high-peak-current low-average-current applications. Typical applicationsare ignition service, crowbars, and other capacitive-d ischargesystems.

These SCR's have an rms on-state current rating (IT [RMS])of 4.5 amperes and have voltage ratings (VDROM) of 100,200, 400, and 600 volts.

Non-repetitive peak reverse voltage·Gate open. . .

Non-repetitive peak forward voltage·Gate open. . .

RepetitIve peak reverse voltage'"Gate open.

Repetitive peak off-state voltage'"Gate open ..

On-state current:TC = 75°C, conduction angle = 1800

RMS.Average ..For other conditions

Peak surge (non-repetitive) on-state current:For one cycle of applied principal voltage

50-Hz, sinusoidal.6O·Hz, sinusoidal.

For more than one full cycle of applied principal voltageRate of change of on-state current

Vo "VOROM,IGT = 200 mA, tr = 0.5"' (SeeF'9·121Fusing current (for SCR protection):

TJ = ~40 to 1000C,t = 1.5 to 10m, .Gate power disslpation:-

Peak forward (for 1 J,J.S max ,JPeak reverseAverage (averaging time = , 0 ms, max,l .

Temperature range:-Storage,Operating {case)

Pin temperature (durIng soldering):For 10 s max. (pins and case) ,

See footnote on next page.

ITIRMS) ---------- 4.5 ---------'T(AV) --------- 3.3

---------See Fig.3 --------

170 ------------------200 ----------------- See Fig.4 --------

---------- 40 ------------------ See Fig.8 ----------------- 0.5 --------

Footnotes for preceding page.•.These values do not apply if there is a positive gate signal. Gate must be open or negatively biased.• Any product of gate current and gate voltage which results in a gate power less than the maximum is permitted .• Temperature measurement point is shown on the DIMENSIONAL OUTLINE.

LIMITS

CHARACTERISTIC SYMBOL For All Types UNITS

Min. Typ. Max.

Peak Off-State Current:(Gate open, T C ~ 1000C)

Forward at Vo = VOROM 100M - 0.2 3mA

Reverse at VR ~ VR ROM IROM - 0.1 2

Instantaneous On-State Voltage:iT ~ 100 A, TC = 250C, See Fig.5 vT

- 2.5 3 V

DC Gate Trigger Voltage:Vo = 12 V (del, R L = 30 fl, T C ~ 25°C VGT - 1.1 2 VFor other conditions See Fig.l0

DC Gate Trigger Current:

I 8 IVo = 12 V (de), RL = 30 fl, TC = 250C IGT - 15 mA

For other conditions See Fig.9

DC Holding Current:

I 9 IGate open, initial principal current ~ 150 mA, T C ~ 250C IHO - 20 mAFor other conditions See Fig.6

Gate·Controlied Turn-On Time:(Delay Time + Rise Time)

Vo = VOROM, IGT = 200 mA, tr = 0.1 ps, tgt - 1.6 2.5 psiT ~ 30 A (peak), T C = 250C (See Fig.ll)

Circuit-Commutated Turn-Off Time:

Vo ~ VOROM, iT ~ 18 A, pulse duration= 50 ps, dv/dt = 20 V Ips, dildt tq - 20 40 ps~ -30 Alps, IGT = 200 mA, T C = 750CSee Fig.14

Critical Rate of Rise of Off-State Voltage:Vo = VOROM, exponential voltage rise, dv/dt 10 100 - Vipsgate open, T C = 1000C, See Fig.15

Thermal Resistance:Steady-state

Junction-to-case ROJC - - 5°CIWJunction-to-ambient ROJA - - 40

I~~----- "TIHO "(BOlO----1'

I ILiDO I Iv

I DSOMI

VOROM

~~0 5 I"~ ..? • 0,;-~..:.~f?'~ • !J.': b.!Y· ~~0

'"<.10 ~...,'

~ 3 ° •.:? ~~,,"

2•••0

,,0

I

Boo.COIIIOUCTION

ANGLE

~~~~DOR~_S~~:~VEECURRENT [IT(RMSJ]~45AIz

W

'" AT CASE TEMPERATURE (Te j- 75-C I'"" 250

GAT~ CIO~TROlIMAY' ek l~S+W

~ DURING AND IMMEDIATELY200 ""'- FOLLOWING SURGE CURRENT

0 INTERVAL;;; OVERLOAD MAY NOT BE RE-".. ........ .•........ PEAlED UNTIL JUNCTION

§!150TEMPERATURE HAS RETURNED

•........•. ' TO STEADY - STATE

0." RATED VALUEW~ -....."'~ ~Hl,><~-,oo

5~ ~W f""~ 50 .........~ --~ 0

0.5 I 1·5 Z Z 5INSTAI\lTANEOUS ON-STATE VOLTAGE lv,)-V

9lCS-19959

>1,0~ :; 8~?; 6OW 4

o~... ~~5~>in",fg

~ .• UPPER LIMIT OF PERMISSIBLE2 AVERAGE (DCI GATE POWER

DISSIPATION AT RATED01 CON ITiONS.

" 6 80.1 2 .• 6 8 1 6 8'0

POSITIVE DC GATE TRIGGER CURRENT CIGT)-A

9255-4466

0.6 0.4 02REvERSE GATE CURRENT IIGTR)-A

92CS-13360R3

o-L _I

/--- Olld!,

Fig.12-Rate of change of on-state currentwith time (defining dildO.

,II I

Vo I I

o_L:_ ---:-r ---I I I!:E90~.roNT

In•• I t I

o-L-j_ _ 1_1.- ---r'd---ttrL.-

, I~t9t---1

I

r-~'IvGT

l 1 _IO'Y. POINT0- ---------

Fig.13-Relationship between off-state volt-age, on-state current, and gate-triggervoltage showing reference points fordefinition of turn-on tir.1e (tgt).

Fig. 14-Relationship between instantaneous on-state current and voltage showingreference points for definition of cir-cuit·commutated turn-off time (tq).

i- 2SCREWS,6·32NOT/llVA'LA6U

FnOMRC/ll

~ ~f::~:~:;;,;::","'"~ o~

~ E> ~:~1~NSULATOR/U-U- ...,,,"'..'u"',,"'"ee H/llROW/llREPRICES

e _

06 {~~~~~~K

G e 495334-1

(-3 ~.~.Y••Lg~:,~U{~~I~~~USHINGS

SHOULDER DIA."

s---- ~~~~D~6R3i~~~~~'=0.050 In. 11.27 mml MAX./llV/llIL •••BLEAT PUBL'SHED

H4IlOW4R£PRICES

2METAL WASHERS ® }2 LOCK WASHERS ~ NOT 4VA'L/llBL£

~ FROMRCA

2HEX.NUTS@

In the United Kingdom, Europe, Middle East, and Africa, mounting·hardware policies may differ; check the availability of atl itemsshown with your ReA salesrepresentative or supplier.

CRITICAL d./dt ~

/

i.!.:O.63~dl I

pRe

Fig. 15-Rate of rise of off-state voltage with time (definingcritical dvldtJ.

DIMENSIONAL OUTLINE FOR TYPESS2400 SERIESJEDEC TO-S

INCHES MilLIMETERSNOTESSYMBOL

MIN. MAX. MIN. MAX.

A 0.270 0.330 6.86 8.38 -.b 0.027 0.033 0.686 0.838 ,.0 0.550 0.650 13.97 16.51 -.0, 0.444 0.524 11.28 13.31 -. 0.136 0.146 3.45 3.71 -

F - 0.115 - 2.92 -L 0.360 0.440 9.14 11.18 ,P 900 NOMINAL - - -

Pin 1 - CathodePin 2 - Gate

Case, Pin 3 - Anode

OO(]5LJ[]Solid StateDivision S2600 S2610 S2620

Series

7-Ampere uLow-Profile"Silicon Controlled RectifiersFor Power Switching, Power Control, Power Crowbar, andIgnition Applications

• High dv/dt capability• LC'w switching losses• Low thermal resistance

• Forward and reverse gate ratings• All-diffused center gate constructionII Low leakage currents, both forward and reverse• Low forward voltage drop at high current levels• High pulse-current capability for capacitor-discharge ignition circuits• Sub-cycle surge capability curve

The 52600, 52610, and 52620 series are all-diffused,three-junction, silicon controlled rectifiers (reverse-blockingtriode thyristors) for capacitor-discharge ignition systems,high-voltage generators, and power-switching and controlapplications.

TO-5). They may be used in capacitor-discharge ignitionsystems (battery or magneto types) for internal combustionengines, electronic igniters, and high-voltage generators.Other uses are power-control and power-switching circuits.

52600B (40654)', 52600D (40655)', and 52600M (40833)'have a three-lead low-profile package (similar to the JEDEC

52610B (40658)', 52610D (40659)', and 52610M (40835)'have integral heat radiators; 52620B (40656)', 52620D(40657)', and S2620M (40834)' have integral heatspreaders.

S26006 S26000 S2600MS26106 S26100 S2610MS26206 S26200 S2620M

250 500 700 V

250 500 700 V

200 400 600 V

200 400 600 VSee Figs. 7-11

100 100 100 A85 85 85 A

See Fig. 12

100 100 100 A

200 A/jJs

MAXIMUM RATINGS. Absolute-Maximum Values:For Operation with Sinusoidal Supply Voltage at Frequencies up to50160 Hz and with Resistive or Inductive Load.

Gate open.REPETITIVE PEAK OFF-STATE VOLTAGE"

Gate open. . .RMS ON-STATE CURR ENT (Conduction angle = 1800)_

PEAK SURGE (NON·REPETITIVE) ON-STATE CURRENT:For one cycle of applied principal voltage60 Hz (sinusoidal) .50 Hz (sinusoidal)For more than one cycle of applied principal voltage

PEAK REPETITIVE ON-STATE CURRENTi- (See Fig_21):

Duty factor = 0.1 %. TC = 75°CPulse duration = 51J,s(min.), 20 IJ,S(max.) .

RATE OF CHANGE OF ON-STATE CURRENT:

VDM = VDROM, IGT = 200 mA, tr = 0.5 jJSISee Fig_ 1)

NON-REPETITIVE PEAK REVERSE VOLTAGE"

Gate open.

NON-REPETITIVE PEAK FORWARD VOLTAGE"

Gate open.REPETITIVE PEAK REVERSE VOLTAGE"

VDROMITIRMS)

ITSM

MAXIMUM RATINGS, (Cont'd).

For Operation with Sinusoidal Supply Voltage at Frequencies up to50160 Hz and with Resistive or Inductive Load.

S2600BS2610BS26208

S26000S26100S26200

S2600MS2610MS2620M

NON·REPETITIVE SUB-CVCLE SURGE CURRENT:

TC = 250C. single pulse, IGT = 50 mA,10 IlS square pulse. . .

GATE POWER DISSIPATION":PEAK FORWARD IIor 1 ,,, max,l

PEAK REVERSEAVERAGE (averaging time = 10 ms, max.)

TEMPERATURE RANGE':

Storage .Operating (case) . .. . .

LEAD TEMPERATURE lOuring soldering)":For 105 max. for case or leads ...

"." PGM, ..... PRGM

PG,CAV)

40 40 40

--- See Fig. 14 ---0.5 0.5 0.5

t When rms current exceeds 4 amperes (maximum rating for the anode lead), connection must be made to the case.

-These values do not apply if there is a positive gate signal. Gate must be open, terminated, or have negative bias.

"Any values of peak gate current or peak gate voltage that yield the maximum gate power are permissible.

'For information on the reference point of temperature measurement, seedimensional outlines.

·When these devices are soldered directly to the heat sink, a 60/40 solder should be used. Caseheating time should be a minimum ... sufficientto allow the solder to flow freely.

Vo

oJ_-- ------ --- -----

, , enes c-nvn 1;;0, - Ie

CHARACTER ISTrC SYMBOL S2600 SeriesS2610 Series

UNITSS2620 Series

MIN. TYP. MAX. MIN. TYP. MAX.

PEAK OFF-STATE CURRENT:(Gate Open, TC = +100oC)FORWARD, Vo = VOROM . 100M - 0.1 0.5 - 0.2 1.5 mA

REVERSE, VR, = VRROM IROM - 0.05 0.5 - 0.1 1.5

INSTANTANEOUS ON-STATE VOLTAGE:For iT = 30 A and TC = +250C · . vT - 1.9 2.6 - 1.9 2.6 V

DC GATE TRIGGER CURRENT:Vo = 12 V (DC)RL = 30 n IGTTC = +250C . - 6 15 - 6 15 mAFor other case temperatures. · . See Fig. 16

DC GATE TRIGGER VOLTAGE:Vo = 12 V (DC)RL = 30n VGTTC = +250C . . · . , .. - 0.65 1.5 - 0.65 1.5 VFor other case temperatures. See Fig. 17

INSTANTANEOUS HOLDING CURRENT:

20 IGate Open and TC = +250C . · . . . . . iHO - 9 - 9 20 mA

. For other case temperatures. · . See Fig. 18

CRITICAL RATE-OF-RISE OF OFF-STATE VOLTAGE:Vo = VOROMExponential rise, TC = +100oC · .. . . dv/dt 20 200 - 20 200 - V/J1s(See Fig. 3)

GATE CONTROLLED TURN-ON TIME:Vo =VOROM ,iT = 4.5 AIGT = 200 mA, 0.1 J1S rise time tgt - 1 2 1 2 - J1sTC = +250C(See Fig. 4)

CIRCUIT COMMUTATEO TURN-OFF TIME:VD = VOROM, iT = 2 APulse DuratiOn = 50 J1Sdv/dt = 20V /J1s, di/dt = -30A/J1s tq - 15 50 - 15 50 J1SIGT = 200 mA at turn on, TC = +750C(See Fig. 5)

THERMAL RESISTANCE:Junction-to-Case . .. · . ReJC - - 5 - - 5Junction-to-Ambient (See dImensional outlines). ReJA - - 120 - - 30

(S2610 Series) °C/W

Junction-to-Heat Spreader (See dimensional outline) ReJHS - - - - I - I 7(S2620 Series)

, I

VRSOM----i ~VRROM

2 4 6 8 10AVERAGE ON-STATE CURRENT [I TtAVU - A

92LM-\\54R2

Fig. 6-Power dissipation vs. on-state current.

CRITICAL dv/dt ~

,/

*:0.63-f-t" RC

I In I di/dt

VS" 'T" -~ '0I 50%IRM--M

1'R

I II --I r'n v__, I-t--- '.-----j __ 0 _

~ VT I V Md'

, ~I 1'"

'"'"::>l;;'"'"..~ 100I-

",uEOl80

",-u••••1-co .... 60;...•3•• 40

~::>~ 20x..~

CURRENT WAVE FORM: SINUSOIDAL ~ HEAT SINKLOAD: RESISTIVE OR INDUCTIVE MOUNTINGCONCUCTION ANGLE a 180· ARRANGEMENT

IL.LLL.L 18J_C=5°C/W)

Jt:SO~ER

EPOXYADHESIVE

HEATSINI( POINT OF

TEMPERATUREMEASUREMENT;SEE DIMENSIONALOUTLINE, PG. 7

'"'"=>.-'"'"~~.-~ 100"'uu.

~l15'" u;<.-o-j 50

'":>i 25x'":>

CURRENT WAVE FORM: SINUSOIDALLOAD: RESISTIVE OR INDUCTIVECONDUCTION ANGLE a 180·

HEAT SINKMOUNTINGARRANGEMENT18;_c::: 15·CI",)

~

SO~~ER

EPOXYADHESIVE

HEAT POINT OFSINK TEMPERATURE

NOTE: MEASUREMENT

FOR TEMPERATURE MEASUREMENT,ATTACH THERMOCOUPLE TO THYRISTORCASE THROUGH A SMALL HOLEORILlEO IN THE HEAl SINK.

9255- 3883R2

Fig. 8-Maximum allowable case temperature VS. on·state current forS2500 series.

CURRENT WAVE FORM: SINUSOIDAL I, HEAT SPREADERLOAD: RESISTIVE OR INDUCTIVE =~~~T~t~I<°~THERMALCONDUCTION ANGLE· 180· ~~~I~J:~CSEpRJ~ANJJkO~.NOTE" 7.0·C/W)

FOR TEMPERATURE MEASUREMENT, HEA~ATTACH THERMOCOUPLE TO SPREADERHEAT SPREADER THROUGH ASMALL HOLE DRILLED IN THEHEAT SINK. _" (~~

.l;(F?M~ ~~~~~ROR POINT OF TEMPERATUREMEASUREMENT

lr~

92SS-3885R2

Fig. to-Maximum allowable heat-speader temperature vs. on-statecurrent for S2620 series.

SUPPLY FREOUENCY ~ 50/60 Hz (SINE WAVE)CASE TEMPERATURE ~60° CLOAD: RESISTIVEREPETITIVE PEAK REVERSE VOLTAGE (VRRM)~MAXIMLN-RATED VALUEAVERAGE ON-STATE CURRENT [IT(AV)]-MAXIMUM-RATED VALUE

__< 100 GATE CONTROL MAY BE LOST DURING

I'\. AND IMMEDIATELY FOLLOWING~I SURGE CURRENT INTERVAL.i=- '\ OVERLOAD MAY NOT BE REPEATED~ ~ 80 "'\. I"'\. UNTIL JUNCTION TEMPERATURE HAS

~E RETURNED TO STEADY-STATE RATED

"'.- r--... VALUE.'z 60z",

~~ 60 Hz

"'u I--- 50 H;'"'" 40f----

"'''' ~=>>-"'0; -.....;~"", 20""lt~ -0

92C5-19037

Fig. t2-Peak surge on-state current vs. surge current duration for alltypes.

lJJ CURRENT WAVE FORM: SINUSOIDAL I CIRCUIT- BOARDCt: LOAD: RESISTIVE OR INDUCTIVE MOONTiNG~ CONDUCTION ANGLE - 180· ARRANGEMENT~~llrr-----'·J_A'''"C/ ••~ mil/mum==}~ L.0625~.MA~~ 100 (1.587mm)

~;': I 75..J-...."'.-;<-~ 50

'":>=> 25:>x'":>

92SS-3BB4R2

Fig. 9-Maximum allowable ambient temperature vs. on-state currentfor 2600 series.

CURRENT WAVE FORM: SINUSOIDAL ILOAD: RESISTIVE OR INDUCTIVECONDUCTION ANGLE - 180·

THYRISTOR WITH INTEGRALHEAT RADIATORMOUNTEDON A CIRCUIT BOARDBJ-A :; 30· C/W

oII.

92SS-3886R2

Fig. It-Maximum allowable ambient temperature v,s. on-state currentfor S2610 series.

O.~ 1.0 1.5 2.0 2.5 3.0INSTANTANEOUS ON -STATE VOLTAGE (vTI-V

92LS-1l50RIFig_ 13-lnstantaneous on-state current v,s. on-state VOltage for all

types.

MAXIMUM ~MINIMUM GATERESISTANCE ,"",0

SHORT CIRCUIT(' A'J;.RAGE _" @CURRENT -10 >"'(, .".~ GATE POWER I

(.s'~5!;.-If. LIMIT' 0.2 W Jf ffi() (,.". -202:(,-\> (0 ~;w

"'''''04() ~..,

~~~ ::.1: -If.(/1t~

~

-30 t54-1- >.." ~~ w

"'oJ•...

-40 <l:..,

~m~~~CUlT":::

-SO ~, ~OLTAGE >

w0:

-60

-40 -20 0 20 40 60CASE TEMPERATURE ITCI-·C

92SS-3889RI

UPPER LIMIT OF PERMISSIBLE2 AVERAGE lOCI GATE POWER

OISSIPATION AT RATEO0.' CON ITIONS. (SEE FIG. 16 e. 17)

4 6 80.1 2 4 6 8 I Z 6 810 2

POSITIVE GATE-TO-CATHODE TRIGGER CURRENT (tGT)-A

92SS-3888RIFig. 15-Gate pulse characteristics for forward triggering mode. ;

IGT(SEE FIG. 20FOR VALUES)

NON-REPETI TlVE)SINE -WAVE PULSE (SINGLE H~~iE~ BLOCKING VOLTAGE DURATIONNO REAP SQUARE PULSE.IOj'.s

~ ;2~E";~~:ERATURE (Tel: 25°C~I11:

j UNSAFE OPERATION

'">;i'"zUi ISJOO

'" .-'''' 6cl~~-,,,,

.~~~uo~ 100",'" .3~ 6~"'"i:'

~"@I~I

~~~1 s~~~~7\wlCURRENT~

~ J -r-- I PULSE I-IOURATIc.r- • 6. 10m,

2 4 6 8 Ims

2 4 6 100~s AT"O"CURRENn'O~, DURATION <SEC>(MEASURED 92C5-'9039SURGE CURRENT PULSE

. 20-Sub-eycle surge capability.Fig.

FOR S2610 SERIESDIMENSIONAL OUTLINE

'J~D~~

T~.o?~JJ 0 0

TO-S PACKAGEWELDED TOHEAT-RADIATOR

MOUNTING TAB(LEAD NO. 2 BEHINDMOUNTING TAB)

0{ DIMPLEDSTANDOFFS

HEAT RADIATOR(NOTE 1)

~PI

INCHES MILLIMETERSNOTES

MAX.SYMBOL

MAX. MIN.MIN.

16.000.63030.61 31.37

A1.205 1.235

19.177D

0.755 18.923D1 0.7450.905 22.22 22.990.875

1.40E

0.055 1.020.0404.32 5.72

F0.2250.170

22.48 -F1

0.885 -7.747

L7.4930.295 0.3052.362 2.413

o P0.093 0.09S

1.57o P,

0.062 1.213

N 0.0481.002 25.349 25.450

3Nl 0.998

0.689 17.45 17.50N2 0.6870.052 -l 1.219 -l,.3201~ 0.048

NOTES: .. h. elect,ole55 nickel plote1. 0.035 C.R.s., IlnlS.. I . ted-circuit boord

ded hole size or pnn2. Recommen mm) dia.

is 0.070 in. (1.78 . 91SS.J900Rld at bottom of heat radiator3. Measure

r100

90

~....~-« 80, I~i10

"= •... 60•...z

~~,~ I I ,''-~G 50,- I " 'PULSEDURATION X 100

" 40DUTY FACTOR ("J '" REPE rmON INTERVAL

..•• ..:-

<

Jw

30

I~

20

10

1 4 ,'10

01 . , , I,

80.11 4

CENTSS-3894

DUTY FACTOR - PER

.. ) vs. dutyk pulse current (repetltfve21-Derating curv~ f?~ ~e~rcuit.factor for the Igmtfo

E FOR S2620 SERIESDIMENSIONAL OUTLIN

,INCHES MilLIMETERS

NOTESSYMBOL 1.MAX. MIN. .1 MAX. -MIN.

5.58I A 0.2219.05A1 0.7525.4D 1.010.31Dl 0.406

3.55 I 4.06D2 0.14 I 0.164.77D3 0.188

10.16E 0.408.12E1 0.323.96E2 0.1560.050.02

1F

I - 24.13118~03

L 0.950.71 17.52N 0.69

13.97N1 0.5519.050.75

1.83 Rad.N2

0.072 Rad.

1 2 JoP

0.094 Dia. l 2.39 Dla.L_o P, .1

NOTES:1. Min. length, 3 leads.2. Two holes.



A 0.160 0.180 '.06 4.57.- 0.017 0.021 0.432 0.533 2.0 0.355 0.366 9.017 9.296.0, 0.323 0.335 8.204 8.51. 0.190 0.210 '.83 5.33., 0.100 TRUE POSITION 2.54 TRUE POSITION '.5... 0.15

I0.035 0.381 0 .•••

j 0.028 0.035 0.711 0 .••• 5

k 0.029 0.045 0.737 1.14 3.5

L 0.985 1.015 25.02 25.78 2p 0.100 2.54 1

0 6, 0.007 0.179. .,. ••• 5.7

1. This zone is controlled for automatic handling. The v.iation in actual diametMoMthin the zone shall not exceed 0.012 in. (0.279mml.

2. (Three LNdsI ~ b ~ies between seating plane and 1.015in. (25.78mmJ.

3. Measured from maximum diameter of the actual device.

4. leads having maximum diameter 0.021 in. (0.533mmJ measured at the lUting plane of thedevice shall be within 0.007 in. (0.178mml of their true positions relative to the maximum·width tab.

5. The deviCI may be measured by direct methods or by the pp and pging procedure de·scribed on pp dr~ing GS-1 of JEOEC public.ltion 12E. May 1964.

6. Details of outline in this zone optional.

7. Tab centerline.

·CASE TEMPERATURE MEASUREMENTThe specified tempet"atur.reference point shOllld be used when making temperaturemeasurements. A low·mass temperatura probe Of" thermocouple having wire no largerthan AWG No. 26 should be attached at the temperature reference point.

REFERENCE POINT FORTEMPERATURE MEASUREMENT.(TOTAL THERMAL RESISTANCE FROMJUNCTION TO HEAT SINK. 10 ·C/W) 92SS-3898R2

• Scotch brand electrical tape No. 27 (thermo setting one side):Minnesota Mining & Mfg. Co., 5t Paul, Minnesota, or equivalent.

• An epoxy such as Hysol Epoxy Patch Kit 6C, Hysol Corporation,Olean, N.Y. 14761, or equivalent.

~or heat-sink temperature measurement, the thermocouple (wire I'tO

larger than AWG No. 26) should be Inserted In II small, shallow hole

drilled In (but not through) the heat sink at the Indicated

temperature reference point.

Fig. 22-Suggested mounting arranflllmtlnt for 52620 SlNiBS (caseinsulated from heat sink).


S2600 SERIES

Lead 1 - CathodeLead 2 - GateCase, Lead 3 - Anode

S2610 SERIES

Lead 1 - CathodeLead 2 - GateCase, Heat Radiator - Anode

Lead 1 - CathodeLead 2 - GateCase, Heat Spreader - Anode

527108, 52710D, and 52710M are all-diffused, three-junction silicon controlled-rectifiers having integral heatradiators. They are variants of the 2N3228, 2N3525, and2N4101, respectively."

The 52710 series is designed to meet the needs of manypower-control and power-switching applications in whichheat sinks are required but where the design of specialcooling systems to achieve the full current rating of thethyristor is not warranted.

Thyristor Thyristor

with without

Heat Radiatar Heat Radiator

527108 (40504) 2N3228

527100 (40505) 2N3525

52710M (40506) 2N4101

The radiator design of these devices has tabs to allowprinted-circuit board mounting and holes to allow chassismounting if desired.

• Ratings and characteristics given for the 2N3228, 2N3225, and

2N4101 in ReA data bulletin File No. 114 are also applicable to thedevices in the 5271 a series.

® FORCED - AIR COOLED, 400 TO 1000 FEET/MINUTE

® THYRISTOR WITH HEAT RADIATOR

© THYRISTOR WITH OUT HEAT RADIATOR100

?IIr-

z 80 ®w Iin t RaJA' 9_5°C /W =i=:;:u< °wi 60 ® B-.JwCD 0::<~ RaJA: 28° C/W~r-0< ©-.JO:: ~-.Jw 40<"- RaJA: 40° C/W:;::;:w~r-

25:;:x 20<:;:

o I

AVERAGE ON-STATE CURRENT [IT(AvTI-AFig. 1 - Maximum allowable ambient temperature

V5. on-state current.

DIMENSIONAL OUTLINEJEDEC TO-66 WITH HEAT RADIATOR

-2 MOUNTINGTABS{NOTE 31

92CS -13383R4

INCHES MILLIMETERS

SYMBOL MIN. MAX. MIN. MAX. NOTES

A 0.620 15.75,b 0.028 0.034 0.711 0.8640 0.750 0.760 19.05 19.30

0, 0.370 C.3as 9.40 9.780, 0.820 0.920 20.83 23.37, 1.297 1.327 32.94 33.70

" 0.546 0.566 13.87 14.37. 0.190 0.210 4.83 5.33, 0.30 0.55 7.62 13.97

" 0.175 0.210 '.44 5.33l 0.270 - 6.86 -N 0.052 0.066 1.32 '.65N, 1.098 1.102 27.89 27.99 1N, 0.•.•• 0.452 11.38 ".47N3 0.099 0.113 0.25 0.29N, 0.498 0.502 12.66 12.75

W 0.048 0.060 '.22 1.52

1 Meelur..tiltbonomof"-l.xl~lor'100J5lftI0889IC,RS .. ,onpiated.3.R_......-cl hole ••llf lot pnnled<OfO;U01boIfd ••

O.070on.(l11Sld'l

Pin 1: GatePin 2: CathodeRadiator, Case: Anode

- Glass passivated chip - High dv/dt capability- 8-A (RMS) on-state current ratings - Low on-state voltage at high current levels- 100-A peak surge capability - Low thermal resistance- Shorted-emitter gate-cathode construction ... contains an internally diffused resistor

between gate and cathode- Center gate construction ... provides rapid uniform gate-current spreading for faster

turn-on with substantially reduced heating effects- Package design suitable for mounting on a printed-circuit board

52800A, 528008, and 52800D are medium-power silicon The unique plastic package design provides easy packagecontrolled rectifiers designed for switching ac and de mounting and low thermal resistance, allowing operation atcurrents. These reverse-blocking thyristors switch from the high case temperatures and permitting reduced heat-sink size.off-state to the on-state when both the anode and gate These 5CRs can be used in lighting and motor-speed control,voltages are positive. Negative anode voltages make these capacitor-discharge ignition circuits, high-voltage generators,devices revert to the blocking state regardless of gate-voltage automotive applications, and power-switching systems.polarity.MAXIMUM RATINGS. Absolute-Maximum Values:

[JClcrBLJDSolid StateDivision

a-AmpereSilicon Controlled RectifiersFor Power Switching, Power Control, andIgnition ApplicationsFeatures:

NON-REPETITIVE PEAK REVERSE VOLTAGE"Gate Open. . .

NON-REPETITIVE PEAK FORWARD VOLTAGE"Gate Open. . .

REPETITIVE PEAK REVERSE VOLTAGE"Gate Open.

REPETITIVE PEAK OFF-STATE VOLTAGE"Gate Open.

RMSON~TATECURRENTFor TC of +80oC and Conduction Angle of 1800.

PEAK SURGE (NON-REPETITIVE) ON-STATE CURRENT:For one cycle of 400-Hz applied principal voltage.For one cycle of 60-Hz applied principal voltageFor one cycle of 50-Hz applied principal voltageFor more than one full cycle of applied pnncipal voltage

RATE OF CHANGE OF ON-STATE CURRENTVD = VDROM, IGT = 80 mA, I, = 0.5 ~s ISee Fig. 3) .

GATE POWER DISSIPATION":

PEAK FORWARD (fo, 10 ~s max.)PEAK REVERSE. . .AVERAGE (averaging time = 10 ms max.l,

TEMPERATURE RANGE':Storage .Operating (Case) . . ........•.Soldering (10 sec. max.l

S2800A(40867)"

125

S28000(40869)"

500

S2800B(40868)"

250

125 250 500

100 200 400

100 200 400

8 8 8

200 200 200100 100 10085 85 85

See Fig. 7.

100 100 100

16 16 16See Fig. 13.

0.5 0.5 0.5

-65 to +150-65 to +100

250

IT(RMS)

ITSM

·These values do not apply if there is a positive gate signal. Gate must be open or negatively biased.

4-Any values of peak gate current or peak gate voltage which result in an equal or lower power are permissible.

'For information on the reference point of temperature measurement, see Dimensional Outline.• Numbers in parentheses (e.g. 40867) are former ReA type numbers.

ELECTRICAL CHARACTERISTICS, At Maximum Ratings and at Indicated Case Temperature (TC)Unless Otherwise Specified.

LIMITS

CHARACTERISTIC SYMBOL S2800A S2800B S28000 UNITS

MIN. TYP. MAX. MIN. TYP. MAX. MIN. TYP. MAX.

PEAK OFF·STATE CURRENT:(Gate Open, TC = +1000CIFORWARD, VD = VDROM IDOM - 0.1 2 - 0.1 2 - 01 2 mA

REVERSE (REPETITIVE), VR = VRROM IROM - 0.1 3 - 0.1 3 - 0.1 3 mA

INSTANTANEOUSON·STATE VOLTAGE:For iT = 30 A and TC = +250C vT - 1.7 2.0 - 1.7 2.0 - 1.7 2.0 V

DC GATE I RIGGER CURRENT:. VD = 12 V (DC)

RL=30rl IGT - 8 15 - 8 15 - 8 15 mATC = +250CFor other case temperatures. .. .. See Fig. 9 .

DC GATE TRIGGER VOLTAGE:

-I 09 11.5 1- I 09 11:, I -I oj 15

VD = 12 V (DC)R L = 30 11 VGTTC = +250C VFor other case temperatures See Fig. 10.

INSTANTANEOUS HOLDING CURRENT: - I 101201-1 10 1 20 I -I 10/Gate Open and T C = +250C . iHO 20 mA

For other case temperatures. S.e Fig. 11

CRITICAL RATE·OF·RISE OF OFF·STATE VOLTAGE:

7J 3001 150 13001- 13012001-VD = VDROMExponential rise, T C = +1 aooe (See Fig. 2.) dv/dt - VipsFor other case temperatures ....... See Fig. 14.

GATE CONTROLLED TURN·ON TIME:

VD = VDROM, iT = 4.5 A. iT = 2 AIGT = 80 mA, 0.1 J1S rise time tgt - 1.6 2.5 - 1.6 2.5 - 16 2.5 psTC = +250C(See Fig. 5.1

CIRCUIT COMMUTATED TURN·OFF TIME:

VD = VDROM . iT = 2 APulse Duration::; 50 J1S

dv/dt = 200V/ps, di/dt =-10 Alps tq - 10 35 - 10 35 - 10 35 psIGT = 200 mA at turn on, TC = +750C(Se. Fig. 4.1

THERMAL RESISTANCe:Junction-la-Case . . . . . . . . . . . . . . . . . . ROJ·C - - 2.2 - - 2.2 - - 2.2

°C/WJunction-ta-Ambient ROJ·A - - 60 - - 60 - - 60

· I,r~~-----~~---,',I

VRSO,..----l :"-VRROM

Vo

oJ_-- ------ --- -----,/-- difd!

IITM---I

50 100 150DC GATE TRIGGER CURRENT (lGTl-A

92C5-19058

*"0.63+t" RC

I Int I di/dt

VIO"T'-~ 10

I SO$ IRM --;J,I'RI II --f r'" ,I f-T-" ----j __ 0 _

--~ VT I V d. d'

I ~I '}-"

Fig. 4-Relationship between instantaneous on-state current andvoltage, showing reference points for definition of circuit-commutated turn-off time (tgJ.

CURRENT WAVEFORM; SINUS01D/·LLOAD: RESISTIVE OR INDUCTIVECONDUCTION, ANGLE: 180·CASE TEMPERATURE: MEASURED AS

SHOWN ON DIMENSIONAL OUTLINE

70o 2 4 6 8 10 12

AVERAGE OR RMS ON-STATE CURRENT [IT(AV) OR IT(RMSl]-A92SS-3982Rl

8 468 468I 10 100 1000NUMBER OF FULL CYCLES IN SURGE DURATION

92LS-1351R5

REVERSE GATE CURRENT ( I GR 1 - A

03 02 01

AVERAGE GATEPOWER LIMIT 1500

~~",I 1250"'=I<~, >~~ tooo",'"t-'""''''I<'J 750--,0",>U'"t-t- 5001<'"u~

...250...

0

020

a 2 4 6 8 10

RMS ON· STATE CURRENT [IT(RMS~-A92SS'4163RI

DIMENSIONAL OUTLINE(JEDEC TO-220 AB)

r--H1LI__\EAIlHG PLAHE A LQ?

"F TEMPERATUREMEASURING POINT

No.1 - CathodeMounting Flange, NO.2 - Anode

No.3 - Gate

INCHES MI LLIMETERS


A 0.160 0.190 4.07 4.B2b 0.025 0.040 0.64 1.02

bl 0.012 0.020 0.31 0.51b2 0.045 0.055 1.143 1397D 0.575 0.600 14.61 15.24

E 0.395 0.410 10.04 10.41

El 0.365 0.385 9.28 9.77E2 0.300 0.320 7.62 8.12

• 0.180 0.220 4.57 5.58., 0.080 0.120 2.03 3.04F 0.020 0.055 0.51 1.39H (1.135 0.265 5.97 6.73L 0.500 12.70Ll 0.250 6.35¢P 0.141 0.145 3.582 3.683Q 0040 0.060 1.02 1.52Z 0.100 0.120 2.54 3.04

Q SCREW. 6-32

~"'OT"'V""l"'8LEFROMRC'"

~ NR231A

~

~~~:~~GULAR METAL

•.

AVA'LABLE AT~UBLIS'HOHAROWilREPR,CU

• - OF103B

~

M'CA 'NSULATORHOLE DIA "O.1450.1.1m

e ~;:~~'::~\ItCE••

~

•• HEATS'NK

6 (CHASSIS)

495334·7INSULATING BUSHING1.0. ~ 0.156 m.14.00 mmle--- ~~~~~~~1~2~1;~~ MAX.

METAL WASHER @] '""u,"wn" ""'"lOCK WASHER @

HEX NUT @ NOT AYAILA9LE fROM RCA

SOlDERlUG~

HEXNUT @


All-Diffused Silicon Controlled Rectifiersfor Inverter Applications

53700B, 53700D, and 53700M* are all-diffused three-junction silicon controlled rectifiers intended for use ininverter applications such as ultrasonics and fluorescentlighting. They feature fast turn-off, high dv/dt, and high di/dtcharacteristics, and may be used at frequencies up to 25 kHz.

Each of these devices has an rms on-state current rating of 5amperes at a case temperature of +600C. The 53700B,53700D, and 53700M have forward and reverse off-statevoltage ratings of 200, 400, and 600 volts, respectively.

• RMS On·State Current -

5 Amperes at TC = + 600 C

•• High dv/dt Capability -

100 V/IlS minimum

• High di/dt Capabi lity -

200 A/Ils

• Shorted· Emitter and Center· Gate Design

Removes restrictions on forward and

reverse gate voltage and peak gatecurrent

Forward and IT(RMS)Type Reverse @

Voltage TC = +600 C

V A

S3700B (40553)- 200 5

S37000 (40554)- 400 5

S3700M (40555)- 600 5

ANODE· TO·CA THODEVOL TAGE·CURRENT CHARACTERISTIC

Principal voltage is the voltage between lhe main ter-minals. Principal voltage is called positive, or forward,when the anode potential is higher than the cathode potential,and called negative when the anode potential is lower thanthe cathode potential.

Principal current is the current flowing between anodeand cathode.

Absolute-Maximum Ratings, for Operation with Sinusoidal AC SupplyVoltage At Low to Ultrasonic Frequencies, and with Resistive or Inductive Load

RATINGS MAXIMUM VALUES UNITS

S3700B S37000 S3700M

Non-Repetitive Peak Reverse Voltage,VRSOMGate Open. . . . . . . _. . . . . . . . . . ... 330 660 700 V

Repetitive Peak Reverse Voltage,

VRROMGate Open . . . ~. . . . . . . . . . . . . . . 200 400 600 V

Repetitive Peak Off-State Voltage,

VDROMGate Open. . . . . . . . . . . . . . . . . . .. 700 700 700 V

On-State Current:

For case temperature of +600 C and 60 Hz

Average DC value at a conduction

angle of 1800, IT(AV) .......... 3.2 3.2 3.2 A

RMS value, IT(RMS) ............ 5 5 5 A

For other conditions ............ See Fig.9

Peak Surge (Non-Repetitive) On-State

Current, ITSMFor one cycle of applied voltage ..... 80 80 80 A

For more than one cycle of applied

vol tage. . . . . . . . . . . . . . . . . . . . . See Fig.ll

Sub-Cycle for Fusing, 12t

For a period of 8.3 ms - .......... 25 25 25 A2s

Critical Rate of Rise of On-State Current,

Critical di/dt

VOX = Vmmo rated value,

IGT = 50 mA, 0.1 ~s rise time ...... 200 200 200 A/~s

Gate Power Dissipation*

Peak, Forward or Reverse, for 10 ~s

duration, PGM .......•.•...... 13 13 13 W

Average, PG(AV) ............... 0.5 0.5 0.5 W

Temperature:·

Storage, Tstg' ................. -40 to +150 -40 to +150 -40 to +150 °cOperating <Case), TC ............ -40 to +100 -40 to +100 -40 to +100 °c

*Any values of peak gate current or peak gate voltage to give the maximum gate power are permissible.

·For information on the reference point of temperature measurement, see Dimensional Outline.

Characteristics at Maximum Ratings (unless otherwise specifiecl), ancl at InclicateclCase Temperature (T C)

CHARACTERISTICS LIMITS UNITS

S3700B S3700D S3700M

Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.

Breokover Voltage, V(BO)OGate OpenAt T C = +1000 C . . . . . . . . . . . . .. 200 - - 400 - - 600 - - V

Peak Off-State Current:Gate OpenAt TC = +1000 CForward, 100M

VOO = V(BO)O rated value ....... - 0.5 3 - 0.5 3 - 0.5 3 mAReverse, IRROM

VRO = VRROM .............. - 0.3 1.5 - 0.3 1.5 - 0.3 1.5 mAInstantaneous On-State Voltage, vT

For an on-state current of 30 A andTC = +250 C ... - ............ - 2.2 3 - 2.2 3 - 2.2 3 V(See Fig.13!

DC Gate Trigger Current, IGTAt TC = +250 C ............ - .. - 15 40 - 15 40 - 15 40 mA(dc)

(See Fig.S)DC Gate Trigger Voltage, VGT

At TC = +250 C ............... - 1.8 3.5 - 1.8 3.5 - 1.8 3.5 V(dc)(See Fig.S)

Holding Current, IHAt TC = +250 C .............. - 20 50 - 20 50 - 20 50 mA

Critical Rate of Rise of Off-StateValtage, Critical dv/dtVOO = V(BO)O (rated value), linear

rise, and TC = +800 C ......... 100 250 - 100 250 - 100 250 - V/~s(See waveshapes of Fig.2)

Gate-Controlled Turn-On Time, t t(Delay Time + Rise Time) g

VOX = V(BO)O rated value, ITM =2 A, IGT = 300 mA, 0.1 ~s risetime, and TC = +250 C ......... - 0.7 - - 0.7 - - 0.7 - ~s(See waveshapes of Fig.3)

Circuit-Commutated Turn-Off Time, t<Reverse Recovery Time + Gate q

Recovery Time)VOX = V(BO)O rated value,

ITM = 2 A, 50 ~s min. pulsewidth, VRX = 80 V min.,rise time = 0.1 ~s, dv/dt =100 V/~s, diR/dt = 10 A/~s,~T = 100 mA at turn-on,

GT = 0 V at turn-off, andTC = +800 C ............... - 4 6 - 4 6 - 4 6 ~s(See waveshapes of FigA)

Vox

oJ_-- ------ --- -----I!----- di/d'

It

r---------Vox

j,o% POINT-I -

- -~~~-

IdV/dl~'

I

tgri------J

II

• .•.• - ._. --¥¥¥

OF POSSIBLE TRIGGERING POINTS

6 FOR VARIOUS TEMPERATURES. PERMITTED PULSE WIDTHSFOR INDICATED PEAK

4FOR_ARO GATE POWER -~

2 \'" A'" ,/ v~v "'- I",

•...10 =~~~~M~GMEG:OTREI~~:~~~~O

MAXIMUM GATE~RESISTANCE lOp.s0

> ·= JUNCTION TEMPERATURE ITj) ...•.~'", lOOpsw 6- Tj--IOOC ~\~"\: "'~~-- " "- 1m, <,,,-<'

4 __

"'- "- """ ./ ~~~"'..,0 ~25° C ./ 1"- /0 ./ "- t----z

5 2V~ )of;::

5 .1000 C - AVERAGE GATE1.0 DISSIPATION LIMIT

• 0.5 WATT

6 -- MAXIMUM GATE TRIGGERCURRENT FOR INDICATED

4 JUNCTION TEMPERATURE ITjl

/.1000 C .25° C Tj'" _woe

I2

MAXIMUM VOLTAGE AT WHICK

INO UNIT WILL TRIGGER FOR

0.1 Tj'" .1000 C

6 8 6 60.1 I~

GATE·TO·CATHOOE CURRENT - AMPERES

~K) ~

Iw~

15 ~

w20 ~

2S ~

MAXIMUM GATE ••..RESISTANCE

~Il Il~

- H-,-l- r-h

PULSE HEIGHT •• 10 A (PEAK)PULSE .IDTH AS INDICATEDVORXN. RATED VALUEWAVEFORM •• SINUSOIDALTHERMAL IMPEDANCE, JUNCTION·TI).

CASE •• SOC!.

o I 2 3 4AVERAGE ON·STATE CURRENT [IT(AY)]-

AMPERES

SUPPLY fREQUENCY •• 60 Hz SINE WAVECASE TEMPERATURE PRIOR TO SURGE •• 600 CLOAD •• RESISTIVEREPETITIVE PEAK REVERSE VOLTAGE (VRROM) •• MAXIMUM RATED VALUEAVERAGE ON-STATE CURRENT OT(AVl1- MAXIMUM RATED VALUE

_'0 I I I IIII I~ii

~~I I III I-LI I I ,

~I I

~1 I I I

~! '\. ,:1;1 II

~ ~60 I' I I~~w~ i' I~~~a40

i~ I II~ t;;zoI II --ti!!

, . • • , . .. , . . •

0.5 1.5 2 2.5 3

INSTANTANEOUS ON-STATE VOLTAGE ('T)-YOLn9'2LS-2344

SIX eO-WATT ".LAMPS CON-NECTED IN

"5 02PARALLEL

"6

C1• C2: 0.01 >IF. 1200 V <Ballast Capacitors)C3: 0.01 tJF. 600 V

C4• C5: 0.02 tJF. 600 VD1• D2: Fast-Recovery Diodes. 6 A. 600 VD3• D4: 1N574L1• L2: 32 >IH

L3: 131 Turns of No.15 Magnet Wire onArnold Engineering Core No.A4-04117.or equivalent

-DC

L, SCR2

--

"

L,0,

" "," ",

'5 "2

L2 D.

SCRf

R1• R2: 1.2 kQ. 5 WR3: 200 Q. 10 WT: Core, 8 pieces of Indiana General No.

CF-60Z Material 05, or equivalent.Cross Section, 8 cmZN1• N6 - 30 Turns of No.1S Magnet WireN2• N5 - 13 Turns of No.1S Magnet Wire.

2 StrandaN3• N4 - 52 Turns of No.1S Magnet Wire.

2 Strands

",0,

"."" '"

1'5 "6

Q1: RCA-4043SQ2' Q3' Q4: RCA-2N3053

c1• C2: 0.003 tJF. 100 VC3• C4: 0.02 >IF. 100 V

C5: 25 tJF. 25 V. electrolyticDI, D2, D3: Transitron type TIG, or equivalent

D4: Motorola type 1M20Z1O. orequivalent

Neon Lamp: GE type NE-S3. or equivalentR1• R3: 1 kQ. 1/4 watt

R2• RlO:~ kQ. 1/4 wattFig. 15- Typical trigger pulse generator for 500·watt, 8·kHz fJuorescent·/ight control inverter circuit.

R4• R12• R15• R\7' R1S: 22 kQ. 1/4 wattR5• Rll: 10 kQ potentiometer

R6: 10 kQ. 1/4 wattR7: 1.5 kQ. 1/4 watt

RS' R9' R13' R\4' R16: 6S0 Q. 2 wattsR19: 5.6 kQ. 1/4 wattR20: 33 kQ. 1/4 watt

R21• R22: 10 Q. 1/4 wattTIt TZ: Sprague Pulse Transformer type

42Z109. or equivalent

.500

.470

340 (B 64) l ('~I;O) r 075I:;,~e::.~,t DETAILS OF OUTLINE

IN THIS ZONE OPTIONAL

.107093

(272 )236

210.190

(533)4.83

2 MOUNTING HOLES

.152 CIA (3.86).142 . 3.61

Pin 1: GatePin 2: CathodeCase: Anode

File No. 690

Thyristors53704A 53714A537048 537148537040 53714053704M 53714M537045 537145

[JU(]5LJDSolid StateDivision

S3704A,B,D,M,S

H-1340

JEDEC TO-66 S3714A,B,D,M,S

With Integral Heat Radiator H-1470A

For Inverter ApplicationsFeatures• Fast turn-off time-S J.l.S max,• High di/dt and dv/dt capabilities• Shorted-emitter gate-cathode construction

... contains an internally diffusedresistor between gate and cathode

• Center gate construction .... providesrapid uniform gate-current spreading forfaster turn-on with substantially reducedheating effects

~100 V 200 V 400 V 600 V 700V

Package Types Types Types Types TypesTo-66 53704A S3704B 537040 S3704M S37045To-66 with

S3714A 53714BHeat Radiator S37140 53714M S3714S

RCA-S3704 and S3714-series types are all-diffused, silicon con-trolled rectifiers (reverse·blocking triode thyristors) designed forinverter applications such as ultrasonics, choppers, regulated

power supplies, induction heaters, cycloconverters, and fluo-recent lighting. These types may be used at frequencies up to25 kHz.


NON-REPETITIVE PEAK REVERSE VOLTAGE:·Gate Open .. . .

NON-REPETITIVE PEAK OFF-STATE VOLTAGE:·Gate Open .

REPETITIVE PEAK REVERSE VOLTAGE:·Gate Open .

REPETITIVE PEAK OFF-STATE VOLTAGE:·Gate Open ..

ON-STATE CURRENT:T C = 60°C. conduction angle = 1800

RMS .Average ..For other conditions

PEAK SURGE (NON-REPETITIVE) ON-STATE CURRENT:For one full cycle of applied principal voltage

60 Hz (sinusoidal) .For more than one full cycle of applied principal voltage

RATE OF CHANGE OF ON-STATE CURRENTVD = VDROM' IGT = 50 mA, tr = 0.1 !'s (See Fig. 11)

FUSING CURREN"';, (for SCR protection):T J = -40 to 100 C, t = 1 to 8.3 ms

GATE POWER DISSIPATION:·Peak Forward (for 10 IJSmax" See Fig. 9) ....Peak Reverse (for 10 ~s max., See Fig. 81 ......•..•........Average (averaging time = 10 ms max.l

TEMPERATURE RANGE:·Storage .Operating (Case) .

PIN TEMPERATURE lOuring soldering):At distances ~ 1/32 in. (0.8 mml from seating plane

for 10 s max. . .

S37D4A S3704B S3704D S3704M S3704SS3714A S3714B S3714D S3714M S3714S

VRSOM 150 300 500 700 800 V

VDSOM 150 300 500 700 800 V

VRROM 100 200 400 600 700 V

VDROM 100 200 400 600 700 V

'T(RMSI.. 5 • A

'T(AVI.. 3.2 A.. See Figs. 2,3,4 ..

'TSM .• 80 .. A.. See Fig. 5 ..di/dt .. 200 • AI!'s

12t .. 25 .. A

PGM.• 13 W

PRGM 13 .. W

PG(AV).. 0.5 .. W

Tstg .. -40 to 150 °cTC .. 40 to 100 .. °c

Tp .• 225 .. °c• These values do not apply if there is a positive gate signal. Gat~ must be open or negatively biased.• Any product of gate current and gate voltage which results in a gate power less than the maximum is permitted .

• For temperature measurement reference point, see Dimensional Outline.

LIMITS

CHARACTERISTIC SYMBOL FOR ALL TYPES UNITSExcept as Specified

MIN. TYP. MAX.

Peak Off-State Current:(Gate open, TC = 100°C)

Forward Current (100M) at Vo = VOROM ........ lOOM - 0.5 3mA

Reverse Current (I ROM) at VR = VRROM ........ IROM - 0.3 1.5

Instantaneous On-State Voltage:

IiT = 30 A (peak), TC = 25°C . . . . . . . . . . . . . . . . . . vT - 2.2 3 VFor other conditions . . . . . . . . . . . . . . . . . . . . . . . . . See Fig. 7

Instantaneous Holding Current:Gate open, T C = 25° C ........................ iHO - 20 50 mA

Critical Rate of Rise of Off-State Voltage (See Fig. 12):Vo = VOROM' exponential voltage rise,Gate open, T C = 80°C . . . . . . . . . . . . . . . . . . . . . . . . dv/dt 100 250 - V/IJ.S

OC Gate Trigger Current:Vo = 12 V (de), RL = 30 n, TC = 25°C . . . . . . . . . . IGT - 15 40 mAFor other conditions . . . . . . . . . . . . . . . . . . . . . . . . . See Fig. 9

OC Gate Trigger Voltage:

I 13.5Vo = 12 V (de), RL = 30 n, TC = 25°C ........... VeT - 1.8 VFor other conditions .......................... See Fig. 9

Gate Controlled Turn-On Time:(Oelay Time + Rise Time)For VOX = VOROM, IGT = 300 mA, tr = 0.1 IJ.S,IT = 2 A (peak), T C = 25°C (See Fig. 10) .......... tgt - 0.7 - /-IS

Circuit Com mutated Turn-Off Time:VOX = VOROM, iT = 2 A, pulse duration = 50/-ls,dv/dt = 100 V//-Is,-di/dt = -10 AI/-IS, IGT = 100 mA,VGT = 0 V (at turn-off), TC = 80°C (See Fig. 13) ... to - 4 8 /-IS

Thermal Resistance, Junction-to-Case . . . . . . . . . . . . . ROJC - - 8 °C/W

@ FORCED - AIR COOLED, 400 TO 1000 FEET I MINUTE® THYRISTOR WITH HEAT RADIATOR

© THYRISTOR WITHOUT HEAT RADIATOR

?~ii5,,0".j ~ 60'"«,,::>;<>-0"~~"o.

""'"::>>-;!x

""2

CURRENT [ITIAVil-A

CURRENT WAVEFORM. SINUSOIOALLOAO· RESISTIVE OR INOUCTIVECONOUCTION ANGLE. (81)0

~ 10 _ ..

I~<5~

2 3

AVERAGE ON-STATE CURRENT[IIT(AVIU-A

SUPPLY FREQUENCY" 60 Hz SINE WAVECASE TEMPERATURE PRIOR TO SURGE" 60° CLOAO • RESISTIVEREPETITIVE PEAK REVERSE VOLTAGE (VRROMI' MAXIMUM RATEO VALUEAVERAGE ON-STATE CURRENT OT(AV)]' MAXIMUM RATEO VALUE

I

8\0 100

SURGE CURRENT OURATION - CYCLES

PULSE HEIGHT. 10 A (PEAK)PULSE WIOTH AS INOICATEOVORXM' RATEO VALUEWAVEFORM. SINUSOIOALTHERMAL IMPEOANCE, JUNCTION-TO-

CASE. 5' C/W

"',~>-z~~~~u

S~~'"

~ 10

~0 0.5 1.5 2 25

INSTANTANEOUS ON-STATE VOLTAGE ('T)-V

i~~'"15 ~

~~~w~orw>wor

100 SHAOEO AREA INOICATES LOCUS8 OF POSSIBLE TRIGGERING POINTS

FOR VARIOUS TEMPERATURES. - - PERMITTEO PULSE WIOTHS6 ~ -

FOR INOICATEO PEAK

4FORWARO GATE POWER

11'<-

\ f".- A2

> '" ,,/VI Ii ,l~s

'- 10 =~~~~~GMEGF~TREI~~:~~~~DMAXIMUM GATE

? RESISTANCE lO,u.s8= JUNCTION TEMPERATURE (T;I 1001£1 ~~"-~ 6- Ti'" 40°C e,\c,"\~

"' ,,-'l-~>- --

"- "-~ 1 ms <;"'~'" 4_. ~~"i>> :;;;> "- I'. "- ./

'" +250 C ,,/ /' ~I I'" ./ "- ------~5 2

V !~ -~E.100° C AVERAGE GATE

1.0 DISSIPATION LIMIT

80.5 WATT

6 -- MAXIMUM GATE TRIGGERCURRENT FOR INOICATEO

4 JUNCTION TEMPERATURE IT;I

.1000 c +250 C Tj" _400 C/

2MAXIMUM VOLTAGE AT WHICHNO UNIT WILL TRIGGER FOR

0.1 Tj. +1000 C

8 6 80.1 1.0

GATE-TO-CATHOOE CURRENT (IGT)-A

.;Loj --- ------ --- -----

,/--- ditd.

IITM---

'

r---------VDX-------- :----i-o

~VRX VRXM

I IIIIII1- -----0

II

'n --~--- 19, ------lI I~l'l ------I

'ox

L~~:OINT:::L- _f-,-l

Fig. 13 - Rt-/ationship between off-state voltage, reverse voltage,on-state current, and reverse current showing referencepoints defining turn-off time (tq).

SUPPLYVOLTAGE

~IISUPPLY

VOLTAGE

II~

* FOR ADD1TlONAL INFORMATIONON GATE TRIGGER CIRCUITS, ET(.REFER TO JEDEC STANDARD

NQ. 7 SECTION 6.204.2.

+ ISOV DC

r

N,C, C2

N2

N3 0,

N.

N5 02

N6

SIX eo-wATTLAMPS CON-NECTED INPARALLEL

Cl, C2: 0.011JF', 1200 V <Ballast Capacitors)C3: 0.01 IJF', 600 V

C4, C5: 0.02 IJF', 600 VD l' D2: F'ast-Recovery Diodes, 6 A, 600 VD3, D4: lN574Ll, L2: 32IJH

L3: 131 Turns of No.15 Magnet Wire onArnold Engineering Core No.A4-04117,or equivalent

LI SCR2

---03

C.R,

C3R3

C5 R2

L2 D.

SCR1

RJ' R2: 1.2 kQ, 5 wattR3: 200 Q, 10 wattT: Core, 8 pieces of Indiana General No.

CF'-602 Material 05, or equivalent.Cross Section, 8 cm2Nl' N6 - 30 Turns of No.1S Magnet WireN2, N5 - 13 Turns of No. IS Magnet Wire,

2 StrandsN3, N4 - 52 Turns of No.1S Magnet Wire,

2 Strands

F?IIQl: RCA-40438

Q2' Q3' Q4: RCA-2N3053Cl, C2: 0.0031JF', 100 VC3• C4: 0.02 IJF'. 100 V

C5: 25 IJF'. 25 V. electrolyticDI, °2, 03: Transitron type TIC, or equivalent

D4: Motorola type.1M20ZIO. orequi.va\ent

Neon Lamp: CE type NE-83, or equivalentRl• R3: 1 kQ. 1/4 watt

R2• RIO: ISO kQ. 1/4 watt

f-15O VDC

O2RS

R. R70,

R.

R" R,.

R'2 D. lC

'

R,.

0.

R4, R12, R15• R17' R1S: 22 kQ, 1/4 wattR5• Rll: 10 kQ potentiometer

R6: 10 kQ. 1/4 wattR7: 1.5 kQ. 1/4 watt

ij,S' R9' R13• R14, R16: 6S0 Q, 2 wattsR19: 5.6 kQ, 1/4 wattR20: 33 kQ. 1/4 watt

R21• R22: 10 Q. 1/4 wattTI, T2: Sprague Pulse Transfo:'mer type

42Z109. or equivalent

Q 2 SCREWS. 6-32

~NOT"'V""l"'8LEFRO"'l~'"

~

e'. OF31A

MICA INSULATOR

e 00 0 M"",w,," "V,"

o HEATStNK

OleHASSISI

60> 495334-7

Ei> 0 2 NYlON INSULATING BUSHINGS1.0." 0.156 m. (4_00 mm)SHOULDER CIA. =-::... 0250 m. 16.40 mmj

U" SHOULDER THICKNESS·OOSO '".11.27 mml MAX.

2METAL WASHERS ®2 LOCKWASHERS@

2HEX.NUTS@

2S0LDER LUG~

2HEX.NUTS@

In the United Kingdom, Europe, Middle East, and Africa, mountinghardware policies may differ; check the availability of all itemsshown with your ReA sales representative or supplier.

DIMENSIONAL OUTLINE FOR TYPES S3714A, B, C, D, M, and SJEDEC TO-66 WITH HEAT RADIATOR

-- TEMPERATURE-I ~51~s,.UREMENT

<- •

-2 MOUNTINGTABS(NOTE 3)

92CS-133B3R4

DIMENSIONAL OUTLINE FOR TYPES S3704A, B, D, M and SJEDEC TO-66

INCHES MilliMETERS

SYMBOL MIN MAX. MIN MAX. NOTES

A 0.250 0.340 6.35 8.64¢b 0.028 0.034 0.711 0.863¢D - 0.620 - 15.75¢D, 0.470 0.500 11.94 12.70. 0.190 0.210 4.83 5.33., 0.093 0.107 2.36 2.72, 0.050 0.075 1.27 1.91 ," - 0.050 - 1.27 ,L 0.360 - 9.14 -

¢F 0.142 0.152 3.61 3.86, 0.958 0.962 24.33 24.43

" - 0.350 - 8.89

" - 0.145 - 3.68. 0.570 0.590 14.48 14.99

INCHES MILLIMETERS


A 0.620 - 15.75

'" 0.028 0.034 0.711 0.864D 0.750 0.760 19.05 19.30Dl 0.370 0.385 9.40 9.78D, 0.820 0.920 20.83 23.37, 1.297 1.327 32.94 33.70'1 0.546 0.566 13.87 14.37. 0.190 0.210 4.83 5.33, 0.30 0.55 7.62 13.97

" 0.175 0.210 '.44 5.33L 0.270 - 6.86 -N 0.052 0.065 1.32 1.65N, 1.••• 1.102 27.89 27.99 1

N, 0.448 0.452 11.38 11.47N3 0.099 0.113 0.25 0.29N. 0.498 0.502 112.65 12.75W 0.048 0.060 1.22 1.52

1 Me....red ~l OOllom01 hNI r.clIIlOl2 0035 In 10889) C R S.!In P.~led3 RKOmmended hole "'e 10< p<lnled-C"cull bo;Ird IS

0070 In. II 778l dl~

Pin No.1 - Gate

Pin No.2 - Main Terminal 1

Case/Heat Radiator - Main Terminal 2

OO(]5LmSolid StateDivision

Thyristors/RectifiersS3705M D2600EFS3706M D2601DF

D2601EF

These RCA devices are silicon controlled rectifiers and siliconIrectifiers intended for use in horizontal-deflection circuits oflarge-screencolor-television receivers_A simplified schematicdiagram for the utilization of these SCR's and siliconrectifiers is shown below. For detailed information on theoperation of this new deflection circuit, seeApplication NoteAN-3780.

The S3705M (40640)* silicon controlled-rectifier and the02601 EF (40642)* silicon rectifier are the trace circuitcomponents. They provide bipolar switching action forcontrolling the horizontal yoke current during the picturetube beam-trace interval.

The S3706M (40641) * silicon controlled-rectifier and the02601 OF (406431* silicon rectifier are the commutating(retrace) circuit components. They control the yoke currentduring the retrace interval.

The 02600EF (40644)*' silicon rectifier is used asa clamp inthe trace circuit to protect the circuit components fromexcessively high voltages which may result from possiblearcing in the picture tube or high-voltage rectifier.

• Designed for off-the-line operation: B+ = 155 V

• Supply voltages: 108 to 129 Vac

• Outstanding performance and reliability

SILICONCONTROLLED·RECTIFIER ANDSILICONRECTIFIERCOMPLEMENTFor HorizontalDeflection Circuitsof Large-ScreenColor·TV Receivers

02600EF026010F02601EF

JEOEC

00-26

• High picture-tube beam current capability: to 1.5mAdc overage (max.)

• Can fully deflect picturetubes having deflection anglesto 900, 1-7/16" neck diameters, and 25-kV ultor vol-tages (nom. value)

Repetitive Peak Off-State VoltageWith gate open .

Repetitive Peak Reverse VoltageWith gate open .

On-State Current:For case temperature of +600C and 60 HzAverage DC at 1800 conduction angle.RMS .

Peak Surge (Nan-Rep"titive)On-State Current:

For one cycle of 60 Hz voltage.

IT(AV)'T(RMS)

Critica I Rate af Rise of On.State Current:For VDX = V(BO)O rated value,IGT = SOmA, O.I~s rise time .

Gate Power Dissipationo:

Peak (forward or reverse)for 10 ~s duration

Temperature Rangeb:Storage .Operating (case) ..

Trace Commulaling

SCR SCR600

-40 to +IS0-40 to +100

a Any ·,alues or peak gate current or peak gate voltage to give the maximum gale power are permissible.

b For information on the reference point of temperature measurement, see Dimensional Outline.

IdV/dl---....,'

I

I

I VRX:----.lI

III

- ----~-------o• I

I

tgri-II

Breakaver Valtage:With gate open

At TC : +100°C .At TC : +800C .

Peak Farward Off-State Current:With gate open,VOO: V(BO)O rated value

At TC : +lOOoC .At TC : +800C ................•

Instantaneaus On-State Valtage:For an on-state current of 30 A,TC : +250C .

DC Gate Trigger Current:At TC : +250C .

DC Gate Trigger Valtage:At TC : +250C .

Therma I Resi stance:J unction-to-Case .

Circuit-Commutated Turn-Off Time:(Reverse recovery time + gaterecovery time)

Trace SCR-At ITM: 6 A(tr: 25 I'S, di/dt: 2.5 A!l's),

Vo : 0 V (prior to turn on),VO: 400V (reapplied at 175V!l's),VR : 0.8 V (min.),IGT: 100mA,VGK(bias): -30V (68 [) source),f: 15.75 kHz,TC : 70°C .

Commutating SCR-

At ITM: 13 A (y, sine wave 71'S base,initial di/dt : 20 A!l's to 3 A),

Vo : 350 V (prior to turn on),dV!dt: 400V!l's (to 100V),VR: 0.8 V (min.)IGT: 100mA(tp: 31'S, tr: 0.2I's),VGK(bias): -2.5V (47 [) source

during turn off),f: 15.75 kHz,TC : 70°C .

S3705MTrace SCR

Min. Typ. Max.

V(BO)OV(BO)O

S3706MCommutating SCR

Min. Typ. Max.

100M 0.5 1.5 mA100M 0.5 1.5 mA

vT 2.2 3 2.2 3 V

IGT 15 30 15 30 mA(dc)

VGT 1.8 4 1.8 4 V(dc)

ROJC 4 4 °C!W

S3705M.S3706M,D2600EF,D2601DF, D2601EF File No.354

SILICON RECTIFIERS D2601EF D2601DF D2600EFMAXIMUMRATINGS: Trace Commutating Clamp

Silicon Rectifiers

Non-Repetitive Peak Reverse Voltagec. VRM(nonrep) 700 800 700 V

Repetitive Peak Reverse Voltaged .. VRM(rep) 550 450 550 V

Forward Current: dDC ......... IF 1 1 1 ARMS ........ IF(RMS) 1.9 1.6 0.2 APeak Repetitive. IFM(rep) 6.5 6 0.3 APeak Surge e ... IFM(surge) 70 10 20 A

Ambient Temperature Range:Operating. TA •• -40 to +150 ~ °eStorage ....... Tstg -40 to +175 ~ °e

Lead Temperature:For 10 seconds maximum. ........... •• 255 °e

CHARACTERISTICS:

Max. Instantaneous Forward Voltage Drop:At IF = 4 A, TA !o 75°C .... ....... vFM 1.3 1.3 2 V

Max. Reverse Current (Static): IAt Te = 100°C. IRM 0.25 0.25 0.25 mAAt T A = 25°C ...... IRM 10 10 10 ~A

Reverse Recovery Time:At IF = 20mA, IR = ImA, Te = 25°C. trr 1.1 1.1 1.6 max ~s

Turn-On Time:At IF = 20 mA, Te = 25°C .......... ton 0.3 0.3 0.3 max ~s

Peak Turn-On Voltage:At IF = 20 mA, Te = 25°C .......... 5 6 7 max V

C Pulse width = 10 J..LS, pulse repetition fate := 15.7 kHz,3 pulses.

For ambient temperatures up to 45°C and maximum thermalresistance from reference point to ambient of 4SoC/W, withdevices operating in circuit of Fig.l.

Pulse width = 3 ms.

At max. peak reverse voltage and zero forward current.

f =l=125 ISO

S3705M, S3706MJEOEC TO-66

D2600EF, D2601DF, D2601EFJEOEC 00-26

ANODELEAD

.027-.036 DIA,

1691-~9Il , ,.220-.260(5.59 -6 .. 60l

DIA

GLASSINSULATION <±>

+ 92CS-14457R3

.500

.470

340 (864) l ('~I:D) r 075

250~ 1194 1

1[(m)

t-~ lSEATING~

360 (9 14l-=---- ~ nc •• " ~ n. n

• DETAILS OF OUTLINEIN THIS ZONE OPTIONAL

CATHODELEAD

(NOTE I)

.027-.036 DIA.(69- 91)

r .962 (24.44) ~.958 24.33 I

POLARITYSYMBOL(NOTE2)

~ REFERENCE POINTFOR CASE TEMPER-ATURE MEASUREMENT

2 MOUNTING HOLES

.152 CIA (3.86).142 . 3.61

2 PINS

g~:OIA. (.~i)

1.4 (35.56)MIN.

i~j(478) 1.4(35.56)

MIN.

Note 1: Connected to metal case.

Note 2: Arrow indicates direction of forward (easy) current flowas indicated by de ammeter.

Pin 1: Gate

Pin 2: Cathode

Case: Anode

When Incorporatmg ReA Solid State Devices In equipment, It is

recommended that the designer refer to "Operating Considerations forReA Solid State Devices", Form No.1 CE·402, available on request

from RCA Solid State DIvIsIOn, Box 3200, Somerville, N.J. 08876.

OOCTI3LJ1]Solid StateDivision

5- Ampere SiliconControlled RectifierFor Applications in Pulse Power SuppliesTo Drive GaAs Laser Diodes

Features:• High peak-current capability• Good current-spreading attributes• Symmetrical gate-cathode construction for uniform current

density, rapid electrical conduction, and efficientheat dissipation

• Controlled minimum holding current• Hermetic construction• Low thermal resistance

Type S3701 M- is a silicon controlled rectifier intended foruse in circuits which generate pulses to drive injection laserdiodes. A simplified circuit of a laser pulser is shown in Fig.1. Detailed information on circuits of this type is given inRCA Application Note AN-4469, "Solid-State Pulse PowerSupplies for RCA GaAs Injection Lasers."

The conventional SCR turn-on time, turn-off time, andon-state voltage do not correlate with circuit performance ina laser pulser operating with extremely short, high-current

• Formerly ReA type 40768.

MAXIMUM RATINGS,Absolute-Maximum Values:Case temperature (T cl = 250C, unless otherwise specified

Gate open VDROM 600 VRMS ON-STATE CURRENT (Conductionangle = , 80°) . .ITIRMS) A

REPETITIVE PEAK ON-STATE CURRENT10.2 ~s Pulse Width): IpM

Free-air cooling, f = 500 Hz 75 AFree-air cooling, f = 5000 Hz 40 AInfinite heat sink, f = 10,000 Hz. 40 AInfinite heat sink, f = 1,000 Hz. 75 A

GATE POWER DISSIPATION:PEAK IFor 10 ~s pulse) PGM 25 W

TEMPERATURE RANGE:Storage. Tstg -40 to 125°COperating (Case) TC -40 to 100°C

TERMINAL TEMPERATURE lOuring soldering): TTFor 10 s max. (terminals and case) 225 °c

pulses. Therefore, a functional test in a simulated pulsercircuit is used to control the S3701M for laser pulser appli-cation.

The S3701 M SCR is designed for the good current-spreadingand delay-time characteristics necessary to provide high-peak-current pulses to drive the laser diode. An additionalsignificant characteristic of this device is its well controlledholding current, which assures operation only at currentssufficiently high to meet the circuit requirements,

CHARGING

~

* TRESISTOOR_600V DC

SUPPLY

PULSEroo,,"J

'* NON -INDUCTIVE RESISTOR

ADJUST RESISTANCE VALUE TO OBTAIN 020j.<sPULSE WIDTH AT 50 % CURRENT POINTS

ELECTRICAL CHARACTERISTICSAt Maximum Ratings and at Indicated Case Temperature (Tel Unless Otherwise Specified

CHARACTER ISTIC SYMBOL LIMITS UNITSMin. Max.

Peak Off-State Current:Gate open, vD = VDROM, TC = 25°C. IDROM - 0.65 mA

TC = 75°C. - 1.2

DC Gate-Trigger Current: TC = 25°C IGT - 35 mADC Gate'frigger Voltage: TC = 25°C VGT - 4 VDC Holding Current:

Gate open, TC = 25°CIHO

15 -mA

Tr = 75°C 10 -

Critical Rate-of-Rise of Off-State Voltage:For vD = VDROM, exponential voltage rise, gate open, TC = 75°C dv/dt 200 - V/!J.s

Source Voltage for Functional Test (See Fig. 2):Ip = 75A, C = O.022!J.F, Rs = 2n, f = 60Hz, pulse duration = 0.21J.S,TC = 25°C Vs - 550 V

Thermal Resistance:Junction-to-Case ROJC - 7 °C/WJunction-to-Ambient. ROJA - 40

INCHES MILLIMETERS

SYMBOL MIN. MAX MIN. MAX. NOTES

A 0.250 0.340 6.35 8.64'.,h 0.028 0.034 0.711 0.863

D 0.620 15.75D, 0,470 0.500 11.94 12.70e 0.190 0.210 4.83 5.33e, 0.093 0.107 2.36 2.72F 0.050 0.075 1.27 1.91 2F, 0.050 1.27 ,L 0.360 9.14

"p 0.142 0.152 3.61 3.86q 0.958 0.962 24,33 24.43

'1 0.350 8.89'2 0.145 3.68, 0.570 0.590 14.48 14.99

0-550 vVARIABLEDCSUPPLY

Pin 1 - Gate

Pin 2 - Cathode

Mounting Flange, Case - Anode

NOTES:1. The outline contour is optional within zone defined by <p 0 and F,.2. Dimension does not include seating flanges.

[KlCTI3LJ1]Solid StateDivision

Thyristors/Rectifiers537025F 021015537035F 021035

021035F

IIj.JJ.

R "*

02101502103502103SF

Horizontial- Def lectionSeR's and RectifiersFor 1100 Large-Screen Color TVFeatures:• Operation from supply voltages between 150 and 270 V (nominal).

• Ability to handle high beam current; average 1.6 mA de.

• Ability to supply as much as 7 mJ of stored energy to the de-

flection yoke, which is sufficient for 29 mm-neck picture tubes,

as well as 36.5 mm-neck tubes, both operated at 25 kV (nominal

value).

• Highly reliable circuit which can also be used as a low-voltage

power supply.

These ReA types are designed for use in a horizontal outputcircuit such as that shown in Fig. 1.

The silicon rectifier 02101S (40892)* may be used as aclamp to protect the circuit components from excessivelyhigh transient voltages which may be generated as a result ofarcing in the picture tube or in a high-voltage rectifier tube.

The silicon controlled rectifier S3703SF (408881* and thesilicon rectifier 02103SF (40890) * are designed to act as abipolar switch that controls horizontal yoke current duringthe beam trace interval. To initiate trace-retrace switchingand control yoke current during retrace, the silicon controlledrectifier S3702SF (40889)* and the silicon rectifier 02103S(40891) * act as the commutating switch.

To facilitate direct connection across each silicon controlledrectifier, S3702SF and S3703SF, the anode connections ofsilicon rectifiers 021035 and 021035F are reversed ascompared to that of a normal power-supply rectifier diode.

COM MUTATINGSWITCH1--- --,

I

HIGH-VOLTAGETRANSFORMER

r---i• I

For a description of the operation of SeA deflection systems see ReA Application Note AN-3780,••A New Horizontal Deflection System Using S3705M and S3706M Silicon Controlled Rectifiers";ST·3871; "An SeA Horizontal-Sawtooth-Current and High-Voltage Generator for MagneticallyDeflected Picture Tubes"; ST-3835, "Switching-Device Requirements for a New Horizontal-DeflectionSystem"

MAXIMUM RATINGS, Absolure-Maximum Values:

SILICON CONTROLLEO RECTIFIERS

Non-Repetitive Peak Off-5tate Voltage:Gate open ................................•..............

Repetitive Peak Off-State Voltage:Gate open ..............................•.........•......

T C ~ BOoC ....•..........•........•......•............Repetitive Peak Reverse Voltage:

Gate open ..................................•.....•......On-State Current:

T C = 60De, 50 Hz sine wave, conduction angle = 180°:Average DC •........•...............•..........•......RMS .....•..............................••...•.•••..Peak Surge (Non-Repetitive):

For one cycle of applied voltage, 50 Hz .Critical Rate of Rise of On-State Current:

For VD ~ VDROM rated value, IGT = 50 mA, 0.1 JlS rise time ......•.Gate Power Dissipatione:

Peak (forward or reverse) for 10 /ls duration, max. reversegate bias ~ -35 V ..................•....................•.

Temperature Rangell:Storage ...........•.................•....•.••.•....•....Operating (easel .

IT(AV)IT(RMSI

COMMUTATING SCRS3702SF

750' V

700 V

25 V

3.2 A5 A

50 A

200 A/JlS

25 w

--40 to 150 °c--40 to BO °c

·Protection against transients above this value must be provided. Transients generated by arcing may persist for as long as 10 cycles.

-Any product of gate current and gate voltage which results in a gate power less than the maximum is permitted.

-remperature measurement point is shown on the DIMENSIONAL OUTLINE.

ELECTRICAL CHARACTERISTICS, At Maximum Ratings and at Indicated Case Temperature ITCISILICON CONTROLLED RECTIFIERS

LIMITSCHARACTERISTIC SYMBOL S3703SF S3702SF UNITS

TYP. MAX. TYP. MAX.

Peak Forward Off-State Current:Gate open, VDO = Rated VDROM 100M

TC = 85°C . ..... .... . . . . . . . . . . . . . . . 0.5 1.5 0.5 1.5 mA

Instantaneous On-State Voltage:iT = 20 A TC = 25°C . ... ... .. ... ...... . .. vT 2.2 J 2.2 J V

DC Gate Trigger Current:TC = 25°C ....... ... .... .... ......... IGT 15 40 15 45 mA

DC Gate Trigger Voltage:TC = 25°C ..... ... ............ .. ................. VGT 1.8 4 1.8 4 V

Critical Rate-of Rise of Off-State Voltage:TC = 70°C ..... ........ .... . .......... . .... dv/dt 700 (MIN.~ 700 (MIN.)'" V/jJ.s

Circuit-Commutated Turn-Qff Timet:TC = 70°C, Minimum negative biasduring turn-off time = -20 V (S3703SFIand -2.5 V (S3702SFIRate of Reapplied Voltage (dv/dt) = 175 Vips .. ..... .... tq - 2.4 - - jJ.sRate of Reapplied Voltage (dv/dtl = 400 Vips .. , .. .... - - - 4,2 jJ.s

Thermal Resistance:Junction-to-Case . ....... ..................... .... .. R8JC - 4 - 4 °C/W

••• Up to 500 V max. See Fig. 3.This parameter, the sum of reverse recovery time and gate recovery time, is measured from the zero crossing of current to the start of thereapplied voltage. Knowledge of the current, the reapplied voltage, and the case temperature is necessary when measuring tq. In the'NOrst conditions (high line, zero-beam, off-frequency, minimum auxiliary load, etc.) , turn-off time must not fall below the given values.Turn-off time increases with temperature; therefore, case temperature must not exceed 70oe. See Figs. 2 & 3.

CLAMPD2101S

700 V800 V

1" A30 A

0.5 A

°c°c

°c

REVERSE VOLTAGE"":Non-repetitive peak" .Repetitive peak ....................•..•....•.........•..

FORWARD CURRENT:RMS •••••.•.•......••...•..••......•..•........••....Peak-surge(non-repetitive)" .Peak (repetitive) ..................•......................

3--707

3--7012

TEMPERATURE RANGE:Storage ........•..............•..•....•....•.......•.. TstgOperating (Case) • . . . . . . . • . • . . . . . . . . . • . . . • • • . . . . . . . . • . . . •. T C

LEAD TEMPERATURE •••••:

F(ji;O s maximum. • . . . . . • . . . . • . • • . . . . . • • . • . • . . . . . . . . . . •. T L

*. For ambient temperatures up to 4SoC.- For a maximum of 3 pulses, 10 J.ls in duration, during any 64 J.ls period.- Maximum current rating applies only if the rectifier is properly mounted to maintain junction temperature below 150°C. See Fig. 4 ..•••. At distances no closer to rectifier body than points A and B on outline drawing.


SILICON RECTIFIERS

MAXIMUM LIMITS

CHARACTERISTIC SYMBOL D"103S D2101S UNITSD2103SF

Reverse Current:Static

For VRRM = max. rated value. IF = 0, TC = 25°C ....•....•. JRM 10 - J1AFor VR - 500 V, TC = 100°C ......•..•.•.......•...... 250 -

Instantaneous Forward Voltage Drop:At IF = 4 A. T A = 75°C ............................... vF 1.4 1.5 V

Reverse·Recovery Time:'FM = 3.14 A.}\ sinewave, -<li/dt = -10 A/J1s, trr 0.5 0.7 J1Spulse duration = 0.94 J1S, T C = 25°C ................ .....

/1--rI 6A

I l:~n----r---25~s----i ~2.4~sI I II

~ r-1q"I,I

175V/~s +t!' IREAPPLIED Idv/dt I I

II'IIIIIII

J/Jj..IO~S~t- : :~~P~.j~D

I I, I dv/dtI 400V/~sI I IREAPPLIED: I: ',I't I __ 500V

lacv __ L I, MAX.MAX. I

The SCA's and rectifiers can be operated at full current onlyif they have adequate heat sinking. The procedure illustratedin Fig. 4 should be used when mounting the SCA's. A singlealuminum plate made as shown in Fig. 5 will provideadequate heat sinking for trace and commutating rectifiers.Lip punching of the chassis at one end of the clamp plate,makes it possible to mount the rectifier using only one screw.

S3702SF and S3703SF fit socket PTS-4 (United InternationalDynamics Corp., 2029 Taft St., Hollywood, Fla.), orequivalent.

Q 2 SCREWS, 6·32s--- NOT ••.VAIL. •••ILEH.OMRC ••

uroDF31AMICA INSULATOR

. SVPPLlEOWITHOEVICl° 0o

00 ~cEHAAT~:~r

e• 495334·7

6 Q 2 NYLON IN.5ULATING BUSHINGS1.0.·0.156 In. {4.00mmlSHOULDER CIA. K::... 0.250 In. (6.40 mml

~ SHOULDER THICKNESS·0.050 Ifl. (1.27 mm) MAX.

2 METAL WASHERS ®2 LOCK WASHERS @

2 HEX, NUTS @>2S0LDER LUG~

2HEX.NUTS@

In the United Kingdom, Europe, Middle East, and Africa. mounting-hardware policies may differ; check the availability of all itemsshown with your ReA sales representative or supplier.

Fig.4-Suggested hardware and mounting arrangement forsews S3702SF and S3703SF.

I 1.125_.----('28,58)'----,j

.".,,"~ J.~r0.312(7.92)_-.1

~5~~;,------J

Fig.5-Suggested clamp plate and mounting arrangement forrectifiers D2103S and D2103SF.

DIMENSIONAL OUTLINE (JEDEC TO-66)S3702SF,S3703SF

SEATING

~AHE

DIMENSIONAL OUTLINE (JEDEC DO-1)D2101S, D2103S, D2103SF

POINT A

LEAD NO. I

+b

POLARITY SYMBOL INDICATES DIRECTIONOF FORWARD (EASY) CURRENT FLOW.THIS POLARITY IS OPPOSITE TO ReAPOWER SUPPLY RECTIFIERS.

INCHES MilLIMETERS

SYMBOL MIN. MAX. MIN. MAX. ~~A 0.250 0.340 6.35 8."

0_ 0.028 0.034 0.111 0.86300 - O.62Q - 15.7500, 0.470 0.500 11.94 12.70, 0.190 0.210 4.83 5.33

" 0.093 0.101 2.36 2.72, 0.050 0.Q75 1.27 1.91 2

" - 0.050 - 1.27 ,L 0.360 - 9.1. -

4p 0.142 0.152 3.61 3."q 0.'" 0.962 24.33 24.43

" - 0.350" - 8.89'2 - 0.145 - 3."

0.570 0.590 14.48 14.99


Pin 1 - GatePin 2 - Cathode




¢b 0.027 0.035 0.69 0.89 2

bl 0.125 3.18 1¢D 0.360 0.400 9.14 10.16

¢Dl 0.245 0.280 6.22 7.11¢D2 0.200 5.08

F 0.075 1.91

Gl 0.725 18.42K 0.220 0.260 5.59 6.601 1.000 1.625 25.40 41.280 0.025 0.64H 0.5 12.7

NOTES:1. Dimension to allow for pinch or seal deformation

anywhere along tubulation (optional).2. Diameter to be controlled from free end of lead to

within 0.188 inch (4.78 mm) from the point ofattachment to the body. Within the 0.188 inch(4.78 mm) dimension, the diameter may vary toallow for lead finishes and irregularities.

Thyristors/ Rectifiers[Jl(]5LJ[)Solid StateDivision

Power Integrated Circuits for Color andMonochrome TV Horizontal DeflectionApplication Features:• Operation from supply voltages between 150 and 270 V (nominal)

• Ability to handle high beam current (average 1.6 mA de)

• Ability to supply as much as 7 mJ of stored energy to the deflection

yoke, which is sufficient for 29-mm-neck picture tubes and 35-mm-neck

picture tubes operated at 25 kV (nominal value)

• Highly reliable circuit that can also be used as a low-voltage

power suppiy

The 53800 series are. all-diffused power integrated circuitsthat incorporate a silicon controlled rectifier and a siliconrectifier on a common pellet. 538005F (41017)", 53800MF(41018)", and 53800E (41019)" are used as bipolar switches

to control horizontal yoke current during the beam traceinterval; 538005 (41020)", 53800M (41021)", 53800EF(41022)", and 53800D (41023)" are used as commutatingswitches to initiate trace-retrace switching.

HIGH-VOLTAGETRANSFORMERr-----,

I TOPICTURE

TUBE

For a description of the operation of SeR deflection systems, see ReA Application Note AN-3780,"A New Horizontal Deflection System Using S3705M and S3706M Silicon Controlled Rectifiers";ST-3871, "An seR Horizontal-Sawtooth-Current and High-Voltage Generator for MagneticallyDeflected Picture Tubes"; ST-3835, "Switching-Device Requirements for a New Horizontal-Deflection System",

53800 Series File No, 639

... ... ...MAXIMUM RATINGS, Absolute-Maximum Values: ~ :; w

~:; w c

8 0 0 0 80 0 0 0!:l III !:l III !:l III !:len en en en en en en

Non-Repetitive Peak Off-5tate Voltage:

Gate open VDSOM 800' 700' 550' 750' 650' 600' 500' V

Repetitive Peak Off·5tate Voltage:Gate open VDROM

T C = 80°C 750 650 500 700 600 550 400 V

Repetitive Peak Reverse Voltage:Gate open VRROM 0 0 0 0 0 0 0 V

On-State Current:T C = 6Qoe, 50 Hz sine wave, conduction angle '= 180°:

Average DC ITIAV) 3.2 3.2 3.2 3.2 3.2 3.2 3.2 A

RMS ITIRMS) 5 5 5 5 5 5 5 A

Peak Surge (Non-Repetitive):For one cycle of applied voltage, 50 Hz ITSM 50 50 50 50 50 50 50 A

Critical Rate of Rise of on·State Current:For Vo = VOROM rated value, IGT = 50 mA. 0.1 1J.Srise time di/dt 200 200 200 200 200 200 200 A/~s

Gate Power Dissipation:Peak (forward or reverse) for 10,us duration; max. reverse gatebias = -35 V for S3800SF, MF, E; -8 V for S3800S, M, EF, D PGM 25 25 25 25 25 25 25 W

Temperature Range-:Storage Tstg -40 to 150 °c

Operating (case) . TC -40 to 80 °c

·Protection against transients above this value must be provided. Transients generated by arcing may persist for as long as 10 cycles.

-Temperature measurement point is shown on the DIMENSIONAL OUTLINE.

ELECTRICAL CHARACTERISTICS, At Maximum Ratings and at Indicated Case Temperature (Tc!

LIMITS

CHARACTERISTIC SYMBOLS38005 F, S3800M F S3800S, S3800M,

UNITSS3800E S3800EF, S38000

TYP. MAX. TYP. MAX.

Peak Forward Off-State Current:

Gate open, VDO = Rated VDROM IDOMTC =850C 0.5 1.5 0.5 1.5 mA

I nstantaneous On-State Voltage: T C = 25°C

SCR, IT = 30 A VT 2.2 3 2.2 3V

Rectifier, IF = 3 A VF - 1.6 ~ 1.6

DC Gate Trigger Current:

TC = 25°C IGT 15 40 15 45 mA

DC Gate Trigger Voltage:

TC = 25°C VGT 1.8 4 1.8 4 V

Critical Rate of Rise of Off-State Voltage'

TC = 70°C dv/dt 8501MIN.I· 850IMIN.)· V/~s

Circuit.Commutated Turn-Off Time t:

TC = 70°C

Minimum negative bias during turn-off time = -20 V,

rate of reapplied voltage (dv/dt) = 175 V/JIs . - 2.4 ~ -Minimum negative bias during turn-off time = ~2.5 V, 'q ~s

rate of reapplied voltage (dv/dtl = 400 V/JIs , ~ - - 4.2

Thermal Resistance:

Junction-to-Case ROJC - 4 - 4 °C/W

t This parameter, the sum of reverse recovery time and gate recovery time, is measured from the zero crossing of current to the start of the

reapplied voltage. Knowledge of the current, the reapplied voltage, and the case temperature is necessary when measuring tq. In the

worst conditions (high line, zero-beam, off-frequency, minimum auxiliary load, etc.), turn-off time must not fall below the given values.

Turn-off time increases with temperature; therefore, case temperature must not exceed 700C.

[~ .. !:.~T: i

:,.. ., : ",I j "

-rI

600v

Q 2 SCREWS. 6-32~ NOT••VA'lAaUFROMRCA

if!7=0OFJ1AMICA INSULATOR

. SUPl'LIEDw,lHOEV'CEo 0o

00 ~E::,1:~"

6e 495334.7

Q 2 NYLON INSULATING BUSHINGSe I.O."0.156on.14.0011'l11'l1SHOULDER OIA.·

~

0.250 ,n, 1640mmlSHOULDER THICKNESS '"0.050 In 11.27 mil'll MAX.

2 METAL WASHERS ®2 LOCK WASHERS@

2HEX.NUTS@

2SOLDEALUG~

2HEX.NUTS@

}~, ...,,,,,,fROMRCA


SEATING

~A"E

REFERENCEPOINT FORCASE TEMPERA·

TURE MEASURE·MENT

INCHES MILLIMETERS

SYMBOL MIN MAX. MIN MAX NOTES

A 0.250 0.340 6.35 8.64Ob 0.028 0.034 0.711 0.86300 - 0.620 ~ 15.75¢O, 0.470 0.500 11.94 12.70, 0.190 0.210 4.83 5.33'I 0.093 0.107 2.36 2,72, 0.050 0.075 1,27 1.91 2

" - 0.050 - 1.27 1L 0.360 - 9.14 -

Op 0.142 0.152 3.61 3.86q 0.958 0.962 24.33 24.43

" - 0,350 - 8.89'2 - 0.145 - 3.68, 0.570 0.590 14.48 14.99


Pin 1 . GatePin 2 . Cathode

Mounting F lange, Case - Anode

RCA 2N3668*, 2:":3669*, 2;\3670*, and 2N4103* areall-diffused, three-junction, silicon controlled-rectifiers(SCR'sA). They are intended for use in power-control andpower-switching applications requiring a blocking voltagecapability of up to 600 volts and a forward-current capa-bility of 12.5 amperes (rms value) or 8 amperes (averagevalue) at a case temperature of 800C.

The 2N3668 is designed for low-voltage power sup-plies, the 2N3669 for direct operation from 120-volt linesupplies, the 2N3670 for direct operation from 240-voltline supplies, and the 2N4103 for high-voltage powersupplies .

• Formerly Dev. Typcs TA2621, TA2598, TA2618, andTA2775, respectively .

•. The silicon controlJed-rectifier is also known as a re-verse-blocking triode thyristor.

• All-diffused construction -assures exceptional uni·formity ond stobility af characteristics

• Direct-soldered internal construction - assures ex-ceptional resistance to fatigue

• Symmetrical gate.cathode construction - provides uni-form current density, rapid electrical conduction, andefficient heat dissipation

ReA tpJFor Low-Voltage

2N3668 PowerSupplies

For 120-Volt2N3669 Line

Operation

For 240- Volt2N3670 Line

Operation

For High-Voltage2N4103 Power

Suppl ies

Absolute.Maximum Ratings, for Operation with Sinusoidal AC Supply Voltageat a Frequency between 50 and 400 Hz, and with Resistive or Inductive Load

RATINGS CONTROLLED·RECTIFIER TYPES UNITS

2N3668 2N3669 2N3670 2N4103

Tlansient Peak Reverse Voltage(Non-Repetitive), vRM(non-,epj3 . ..... .... 150 330 660 700 volls

Peak Reverse Voltage (Repetitive), vRM(rep)q. . . . . . . . . . . ... 100 100 400 600 volts

Peak forw31d Blockmg Voltage(Repelibvel, vFBOM(rep)C. ....... .,. . . . . . . . . . . . 600 600 600 700 volls

Forward Current:For case tempelature (T C) of +800 C

Average DC valueata conduction angle of 1800, IFAY<!. ...... 8 8 8 8 amperesRMSvalue, IFRMSe. 11.5 11.5 11.5 11.5 amperesFor other conditions, see Fig. 8

Peak Surge Current, iFM(surgd:For one cycle of applied voltage ................ ..... 100 100 100 100 amperesFor more than one cycle of applied voltage. ......... ...... See Fig. 10 See Fig. 10 See Fig. 10 See Fig. 10

Sub·Cycle Surge (Non·Repelllive), 111&For a period of lms to 8.3ms . . . . . . . . . . . . . . . . . . . . . . . 165 165 165 165 ampere2

secondRate of Change of Forward Current, di 'dth. .... ..... ... 100 100 100 100 amperes

YFB ~ vBOO(mtn. valuel microsecond

IGT ~ 100mA, 0.5 J.' S rise lime(See waveshapes of Fig. 1)

Gate Power·:Peak, Forward Of Reverse, for lO,us duration, PGMi . . . . . . . . .. 4U 40 40 40 watts

(See Figs. 5 and EIAVeiage, PGAyk. . . . . . . . . . . . . . . . . . . . . . ... 0.5 0.5 0.5 0.5 watt

Terr.perature:Storage, Tstge. ......... ... . . . . . . . . . ... ... .. .. , .. -4010 >115 -4010.115 ·4010.115 -4010 >115 °COpelaling (Case), TC. -4010.100 -4010·100 -4010.100 -4010 >100 °C

0-1--------- _ CRITICAL d,/dl ~

/

*"0.63 VfB

f" RC

CHARACTERISTICS CONTROLLED.RECTIFIER TYPES UNITS

2N3668 2N3669 2N3670 2N4103

Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.

Forward Breakover Voltage, "800m

1.tTC' .IOOOC ..................... 100 - - 200 - - 400 - - 600 - - volts

Peak Blocking Cunent, at T C :: • 100°C:Forwafd, IFBDM" . - 0.1 1 - 0.15 1.5 - 0.3 3 - 0.35 4 m1.

VFBOP • 'BOO(m". value)Reverse, (RBOM'. - 0.05 1 - 0.1 1.15 - 0.1 1.5 - 0.3 3 m1.

VRBOP = vRM(lep) valueForward Voltage OIOP,VFr

At a Forward Current of 25 amperes andaTe' .150e (See Fig. 11).. . . . . . . . . . . . . - 1.5 1.8 - 1.5 1.8 - 1.5 1.8 - 1.5 1.8 volts

DC Gale- Trigger Current, IGTs:

1.tTe' .150e(SeeF,g.5l. ....... 1 10 40 1 10 40 1 10 40 1 10 40 m1.(de)Gale·Tngge, Voltage, VG{

At Te' .150e (See Fig. 5l. . ........... - 1.5 1 - l.5 1 - 1.5 1 - 1.5 1 volts (de)Holding Current, IHOOu:

At Te' .150e. 0.5 15 50 0.5 15 50 0.5 15 50 0.5 15 50 m1.Critical Rate of Applied Forward Voltage,

Critical dv dlv. 10 100 - 10 100 - 10 100 - 10 100 - volts!VFS:: vBoo(mm.value), exponential rise, microsecond

Te' dOOOe(See waveshape of Fig. 2)

Turn-On Time, lonw, (Delay Time + RIse Time) . 0.75 1.15 - 0.75 1.15 - 0.75 1.15 - 0.75 1.15 - microsecondsVFB = vBOO(mln. value), IF = 8 amperes,IGT'" 200mA, 0.1 uS Ilse lIme,Te 0 .150e

tSee waveshapes of Fig. 3)Turn·Off TIme, toffl, (Revelse Recovery TIme

I+Gate Recovery Time). - 10 50 - 10 50 - 10 50 - 10 50 microsecondsIF'" 8amperes, 50" s pulse width,d'FBdl' 10, "s,d', dt • 30 A .. s, IGT • 100m1., ITe'·800e

171I See waveshapesof FIg. 4)

Thermal ReSistance, Junction-to-Case. - - - - 17 - - 17 - - 17 0e 'W

dVrs/dt ~/

I

dir Idt \

~\\

IIIIII

iF I_:l __ 1

III'I Ik-----,

(

I vRB____ :-----iIII

I I-+------ ------0

, I

Itqr ----+1

It off ------.;

The construction of the gate-cathode junctionused in these devices pro, ides a large periphervcenter gate. These devices also employ shorted-

emitter construction which removes restrictions on

both forward and re,·erse peak I(ate voltal(e and peak

gate current. Limiting \'alues of \'olt-ampere productsfor different gate pulse ,,"idths are sholln in Fig. 5.

These limits should be adhered to IIhen designing

pulse trigger circuits for maximum trigger pulse widthsand peak pOller dissipation. The ,·olt-ampere products

in the re,"erse direction sholln in Fig. 6" should be

u!?cd to determine limitations for reverse gate tran-

sients or rc\'crse gale pulses if present. In all cases,

total a\'era~e ~ale diss\?ation, both forward and re-\"crse, should not exceed the average gate dissipationrating (PG.-\ \") of 0.5 lIatt.

Turn-on times for different gate currents are shownin Fig. 7. These curves ma)' be used to determine the

required widlh of the gale trigger _pulses. It is onlv

necessary to maintain the gate trigger pulse until the

magnitude of the forward anode current has reached

the latching current value. Ho\\ever, conservativedesign requires that the gate trigger pulse width be

at least equal to or somewhat greater than the device

turn-on time. Some applications may require widergate pulse widths for proper circuit operation.

.--Do L,-..J180°

CQKlUCTIONANGLE

~:::. .- .... ::::

3

"'0z0

~052'"I'"'">=Z I0I

Z

'"::>•...

2 3 4 5 6 7 B 9 10 II 12 13 14

AVERAGE FORWARD CURRENT {IFAVl-AMPERES

92CM-I3808

SUPPLY FREQUENCY,,60 H7 SINE WAVECASE TEMPERATURE"aOo clOAD:RESISTIVEREPETITIVE PEAK REVERSE VOLTAGE ~RM(reP~:MAXIMUM-RATEO VALUEAVERAGE FORWARD CURRENT (IFAV):MAXIMUM-RATEO VALUE

1 !2001\.

1 160 '">-V>z'"",,,,~ ltl20co"u«",I'" 80'" -.........~'"

........« 40l:'

02 4 6 , 2 4 6 , 2 4 6 ,

NATURAL COOLINGSINGLE - PHASE OPERATIONCONDUCTION ANGLE. 1800 *CONTROlLED -RECTIFIER USING HEAT-SINK COMPOUNDHEAT SlNKl 1/16~!.. THICK COPPER WITH A MAT - BLACK

SURFACE AND THERMAL EMISSIVITY OF 0.9

~" ~«I

~1 «... I>- 1zll! ...'5 >-u

~Q

a: a:

~ i3"- IE'" !'"«ei

'"il g"co

" il~ "" :>

";;«"

CASE TEMPERATURE (TC)=25° C .~...I~· -~- ..._-- ---'-' .......-t.: ~- --

FEE= - 2: --- ~::::- .... -- ':::!1...--- tc:" -, , ~.

100 -- -- 'r ., , 'j~ .'-!=; , ---- .. .... , .. -._. . . -- ::-n

Q -- , ,it ~~J._. :-;.1 .- i.='" _ ... .. .- -r:~ 80 .- ._ .. ... .-- .... .. . -V> .. .._ . ~f;'" '" : , : :.. _.-.

J 3 § =:fffi' ~ .. ,:_ ..-. _._. '-'-V>

Q.

=]'1 :'".. -- f , ---- us: ~-- ..

:> " .. .. "-0' .. .. ".0 « 60'" I .. :::: , J :-:::=z .- .... :i"- "-z II +

.-- = :-w~>- 40 .. -- .~ .. '1

'-- " 1 , .. :: ::.." '",.. :

~'" .. --

•••:> ,. ::.: :u ..

" 20

Y / q"'-' :'2;;« .. .-- --- .. ..

" V ./ I,E : -- .. --..:-::1"1-- -- ... --- 3~

FORCED·AIR COOLING'AIR VELOCITY" 1000 FEET PER MINUTE PARALLEL TOPLANE Of HEAT SINK

SINGLE - PHASE OPERATION

~:~~~~ltiD ~~T~;I~~O~S'NGHEAT-SINK COMPOUND*

HEAT SINK' 1/16" - THICK COPPER WITH A MAT-BLACKSURFACE AND THERMAL EMISSIVITY OF 0.9

~ 2 SCREWS 6·32w--- NOT"'V"'ILA~LEFAOMRC'"

t~it:~~'"W,:~~----~

Oe~:~~:~'~NSULAT1NG6 0 ~~S~l~.~~ in. (4.00 mml

~

SHQULDERDIA.-O.2SOm,1640 mm) MAX.,SHOULDER THICKNESS·0.050 In, 11.21 mm) MAX.

2 METAL WASHERS ® Sl.PI'llEOWlTH DEVle"

, LO::~::HUE::~ } NOT AIIA'LA,6lE FRO'" ReA

2S0LDEA LUGS~

2HEX.NUTS@

In the United Kingdom. Europe. Middle East, and Afnca, mounting-hardware policies may differ; check the availability of all itemsshown with your ReA sales representative or supplier.

.450

.250

1-.312 MIN.

I

SEATING PLANE

L.135 "AX .

NOTE: THESE DIMENSIONS SHOULD BE MEAS-URED AT POINTS .050 TO .055 BELOW SEATINGPLANE. WHEN GAUGE IS NOT USED, MEASURE-MENT WILL BE MADE AT SEATING PLANE.

o-1NIPINIPf-DJ<5CATHODETERMINAL

ANODETERMINAL

(CASElI

GATETERMINAL

PIN 1: GATE

PIN 2: CATHODE

CASE: ANODE

Solid StateDivision 5620056210 56220

5eries

PRESS·FITS6200SeriesCATHODE\ ....-GATE STUD

S6210Series

ISOLATED·STUDS6220Series

20-AmpereControlled

SiliconRectifiers

For Low-Voltage Operation - 56200A (40749)*, 56210A (40753)*,56220A (40757)*

For 120-V Line Operation - 56200B (40750)*, 56210B (40754)*,56220B (40758)*

For 240-V Line Operation - 562000 (40751)*,562100 (40755)*,562200 (40759)*

For High-Voltage Operation - 56200M (40752)*, 56210M (40756)*,56220M (40760)*

These RCA types are all·diffused, silicon controlled rectifiers(reverse·blocking triode thyristors) designed for powerswitching and voltage regulator applications and for heating,lighting and motor speed·control circuits,

These SCRs have an RMS on-state current rating (IT [RMS])of 20 A and have voltage ratings (VDROM) of 100, 200, 400,and 600 volts,

MAXIMUM RATINGS, Absolulc-,\Iaximum \'olups:~O~-RF:PF:TITI\'F: PEAK Rr:\'r:RSE \"()LT,\(;E

Gatt· Open ...................•.........•....~O"-Rr:PETITI\'E PEAK FORWARD\,Ol-T,\(;r:

(; ••1t' Opt'n ......••...................•..•...

RI,:PETITln: I'r:AK REn:RSE VOI-TAC;,:t;att' ()Pt>" •••••...•.•.•••••.....••.••••••..•

RU'ETITI\'E Pr;AK OFF-ST,\TE \"OI.T,\(;I,;{:i1I(' ()pt'n ••••••.••..•....•.•••.••..

I'I;AK Sl'R(;r; I~O~'REI'ETITI\'EI O~-STATE ("('RRE~T:For ont' ('yc-lt, of lIpp!Il'rl pnncipal VOltilJW

50-II z. sinusoidal .tW-1I /.. sinusoidal ...............•..........•

For mort.' than ont' full (".\It.'lt, of ilppll('d prinCipal \-oltagl' ... ,

0N-STATF. CURRENT:For l'a~l' ll'mpNutuTl' (TC) = 75° C. conductiun an~l(' of I~)n

A\·l'nl~f' DC \"alul' • • . • . . . .. • ••••.•..... , •. ,.

R\1S \""JUl' •••••••• , •••••••••••••••••••• ,.,

RATE-IW-C'!IANC;EOF ON'STATE CURRENT:\ 0\1 = v( B010,IGT = 200 mA, tr n.!) p.s (S('l' Fi,i{. 2.) .....

(;ATE POWER DISSIP/\TION:PEAK f'!)RWARD <ror 10 p.;-. nUlx.l , , ..••••••••..• , . ,

AVERA(;E (a\'erll~ln~ tlm<' - 10 ms, milx.) , ••••• , •.••••PEAK REVER'-;E . , ... , . , . . . . . , , .. , .•..

TEMPERA1TRE IL\NI;F::Stora~(' ••• , • , •• , •••••••. , ••••••• , , . , , , •• , • ,

()p<'ratlnR (Cast') ••.•.••••••. , ••••• , • , ..•.•••••

Soldl'nnR (10 s max. for tenninalsl , •.... " .• '

Features:• Low switching losses• High di/dt and dv/dt capabilities• Shorted·emitter gate-cathode

construction• Forward and reverse gate dissipation

ratings• All-diffused construction-assures

exceptional uniformity and stabilityof characteristics

• Symmetrical gate-cathodeconstruction-provides uniformcurrent density. rapid electricalconduction, and efficient heatdissipation

• Low leakage currents, both forwardand reverse

• Low forward voltage drop at highcurrent levels


56200A 56200B 56200D 56200M56210A 56210B 56210D 56210M56220A 56220B 56220D 56220M

\'RSO\I 100 200 400 600 V

\'IJSml 150 250 500 700 V

\'RRml 100 310 400 600 V

\'IJRO\l Ino 200 400 tilll) V

IT""170 A200 A

See Fig. 10

11'(,\\"1 12.5 A

1'f(R\ISI 20------ A

dtidt 200 A/P.8

PGM 40 WPC(I\V) 0,5 wI'J{(;M Set' FiR. 5

-05 Lo \50 °C-65 to 100 °C

225 °c

11-73

ELECTRICAL CHARACTERISTICSAt Maximum Ratings and at Indicated Case Temperature (T C) Unless Otherwise Specified

SYMBOLLIMITS - ALL TYPES

UNITSCHARACTERISTICMin. Typ. Max.

Inslantaneous Forward Breakover Voltage'IGate open. T C = 100 oc)

56200A, 5621 OA, 56220A . ... .. .. .. 100 -

56200B, 5621 OB, 562208 . .. .... 200 - -562000,562100,562200 vI Bo)O 400 - - V.. ...56200M, 56210M, 56220M ..... .... ... 600 - -

Peak off·State Current·IGate open, T C = 100 ° C'

Forward, VOO = VOROM . .. .. .. .. 100M - 0.2 3 mAReverse. VRo = VRROM ... . , ... . ... ..... IRROM - a I 2

Instantaneous On'Stale Voltage'For 'T=IOOA. TC=250C .......... .................. ... vT - 1.9 2.4 V

DC Gate Trrgger Current·Vo = 12V IOC). RL =30n. T C = 25°C .. .... ..... . .... . ... - 8 15 mAAt oilIer case temperatures . IGT See Fig. II.......... .... ..... ... . .... . .

DC Gale Trrgger Voltage'I l.l IVo = 12VIOCI. RL =30\;. TC = 25°C ........ .. . .......

VGT2 V

At other case temperatures. ....... .... . ...... See Fig. 12

Instantaneous Holding Curren!"

I 9!

Gate open. T C = 25 ° C ... ....... ... .. - . ... ..... .... 'Ho I 20 mAAt other case temperatures . . ..... .... See Fig. 15

Crrtical Rate·of·Rise of Ort·State Voltage:(VOO = VIBO)O Min. value, Exponential rise, TC • 100°C, See Fig 5)

56200A, 562000, 56210A, 562100, 56220A, 562200 ..dv dl 10 100 - V;;.s.....

56200B, 562108, 562208 10 ISO -56200M, 56210M, 56220M ........... 10 75 -

Gate Controlled Turn·On Trme:Vo = VIBO)O Min. value, iT ~ 30A, IGT -200mA, 0.1 "s rise time, TC ·250C tgt - 2 - liSSee Fig. 9

CirCUit Commulated Turn·Off Time'Vo = VFIBOlO Min. value, iT = 18A, Pulse ouralion 50 "s,

tqdv/dt = 20 V II'S, di/dt = -30 All'S, T C = 75°C - 20 40 liSSee Fig. 4

Thermdl ReSistance:Junction-la-Case ... ..... ........ ...................... ROJC - - 1.2

0C 'WJunctlOn·to·lsolated Stud . . . . . . . . . . ........ .... .......... ROJtS - - 1.4

~J-----------------,/..--di/dl

I

I"·~

0--- _ ~L~MI_~ _

~ r--'I

I I

VRSO"'~ ~VRROM

~.O.63+t· Rt

; 'T. }';j',VSO"T.-\! ,I SO" IRM --111, 'oxI I1 --j r-'"

__ I f--t-- '. ---j ~_'_DX _

~'T I :(', •• ,

I \t-1 I 'I

Fig. 4-Relationship between on-state current, reverse current, on-state VOltage,and off-state voltage showing reference pointsfor definition of turn~ff time (tg).

CURRENT WAVEFORM: SINUSOIDAL ;Qe~LOAD· RESISTIVE OR INDUCTIVEl5

CONDUCTION

- ANGlE

30

~,DC OPERATION

•.. 2S•.. t~-~. ~ r",g ~

(().IDUCTIQN ANGLE '" 1800z

j~~t0 ._-

~ 20'+'1 '2\)<>'

:/ '~j ; I;:: .~ ~.is 90' -'IY- .~ /: ..w -t t- ~l:.0 ':1 .... _ ..~

"".. .. o·

W "•.. rl-.~·: .... -< - ~--< ,:i~•.. ., .. ..... ... ...~ "'" I' .... . .~~"

-.:t.:..; :-r:: • 4 • ~ -:r t~

I-~-~

-;n~ i ., ii:: ,'"w10>~ -:i-::- wi t

5

;Q~CONDUCTION

ANGLE

90

~,~ 85

30'

w~~""

•..~~w~~ 80w~Uw~'"~.~ 75

~~~S

AVERAGE ON·STATE (URRENT IT(AV) -A '1»'-'7-Maximum allowable case temperature vs. average forward

current for stud and press-fit.

Q8ifCONDUCTION

ANGLE

..u

~ 80

'"~'"S 75

.. CASE TEMPERATURE" 60°CLOAO :: RESISTIVEg REPETlTIVE PEAK REVERSE vOL TAGE [~RRO/l\] " MAXIMUM RATED VALUE

AVERAGE ON-STATE CURRENT (IrIAV)) '" MAXIMUM RATED VALUE

.... 400%

'"'"~uw

300"..•...

~~

100~w

'" J'H'~ ",':: -....::::: ......" 100'"~~..w~

0

-40 -20 0 20 40 60

CASE TEMPERATURE (TC )_·C

9255-4465

UPPER LIMIT OF PERMISSIBLE2 AVERAGE (OC) GATE POWER

DISSIPATION AT RATEDOJ CON ITIONS.

4 6 80.1 2 6 8 I 6 810 2

POSITIVE GATE-lO-CATHODE TRIGGER CURRENT (lGT)-A

9255-4466

-60 -40 -20 0 20 40 60

CASE TEMPERATURE ITCI-oC9255-4467

Fig. 15-DC holding current vs. case temperature.

Mounting of press- fit package types dependsupon an interference fit between the thyristor case andthe heat sink. As the thyri stor is forced into the heat-sink hole, metal from the heat sink flows into the knurlvoids of the thyristor case. The resulting close contactbetween the heat sink and the thyri stor case assures lowthermal and electrical resistances.

A recommended mounting method, shown in Fig. 15,shows press-fit knurl and heat-sink hole dimensions.If these dimensions are maintained, a "worst-case"condition of 0.0085 in. (Q.21.~9 mm) interference fit willallow press-fit insertion below the maximum allowableinsertion force of 800 pounds. A slight chamfer in theheat-sink hole will help center and guide the press-fitpackage properly into the heat sink. The insertion toolshould be a hollow shaft having an inner diameter of0.380 ± 0.010 in. (9.65 ± 0.254 mm) and an outer diame-ter of 0.500 in. 02.70 mm). These dimensions providesufficient clearance for the leads and assure that nodirect force is applied to the glass seal of the thyristor.

The press-fit package is not restricted to a singlemounting arrangement; direct soldering and the use ofepoxy adhesives have been successfully employed. Thepress-fit case is tin-plated to facilitate direct solderingto the heat sink. A f)0-40 solder should be used andheat should be applied only long enough to allow thesold,'r to now freely.

---'-- ~~g~~-:b)lOIA.

900 L8 MAX.

-~I-NOTE: Dimensions in parentheses are inmillimeters and are derived from the basicinch dimensions as indicated.

In the United Kingdom, Europe, Middle East, and Africa, mounting-hardware polIcies may differ; check the availability of all itemsshown with your ReA sates representative or supplier.

Type of Mounting ThermalPackage

Employed Resistance-OClW

Press-fitted into heat sink.0_5(Minimum Required thickness

of heat sink = liB in.

Press-FitSOldered directly to heat sink_(60-40 solder which has a melt-ing point of 1880 C should be

0.1 to 0.35used. Heatmg time shouldbe sufficient to cause solderto flow freely).

Directly mounted on heat sinkwith or without the use of heat· 0.6sink compound.

StudMounted on heat sink with a0.004 to 0.006 in. thick micainsulating washer used be-tween unit and heat sink.

Without heat sink compound 2.5

With heat sink compound 1.5

REFERENCEPOINT FOR CA.SETEMPERATURE -MEASUREMENT

INCHES MilLIMETERSNOTESSYMBOL

MIN. MAX. MIN. MAX.

A - .380 - 965,,0 501 .510 12.73 12.95,,0, - .505 - 12.83 2,,0, .465 .475 11.81 12.07

J - .750 - 19.05M - .155 - 3.94 1

"T .058 .068 1.47 1.73lOT, .080 .090 2.03 2.29

NOTE 1: Contouf and angular orientation of these terminals isoptional.NOTE 2: Outer diameter of knurled surface.

INCHES MIlliMETERSSYMBOL

MIN. MAX. MIN. MAX,NOTES

A ,330 ,505 8,4 12,8 -,,0, - .544 - 13,81 -

E 544 .562 13,82 14,28 -F 113 ,200 2,87 5.08 3J - .950 - 24.13 -M - .15S - 3.94 1N .422 ,453 10.72 11.50 -

"T ,058 .068 1.47 1.73 -"T, .080 .090 2.03 2.29 -",W ,2225 .2268 5.652 5,760 2

NOTE 1: Contou; and angular orientation of these terminalsis optional.NOTE 2: f>itch diameter of \4-28 UNF-2A (coated) threads(ASA Bl. 1-1960).NOTE 3: A chamfer or undercut on one or both ends of hexagonalportion is optional.

Terminal No. 1- GateTerminal No.2 - Cathode

Case, Tenninal No.3 - Anode

REFERENCE!POINT FOR CASE-lTEMPERATUREMEASUREMENT

J

SEATING PLANE

mS-Ull

NOTE 1: Ceramic between hex (stud) and terminal No.3 isberyl I ium oxi de.

NOTE 2: Contour and angu lar orientation of these terminalsis optional.

NOTE 3: Pitch diameter of ',6-28 UNF-2A (coated) threads(ASA Bl. 1-1960),

SYMBOLINCHES MILLIMETERS NOTES

MIN. MAX. MIN. MAX.

A - .673 - 17.09</>0 .604 .614 IS.34 15.59</>01 .501 .505 12.72 12.82

E .551 .557 13.99 14.14F .175 .185 4.44 4.69J - 1.055 - 26.79

M - .155 - 3.94

Ml .200 .210 5.08 5.33N .422 .452 10.72 11.48

</>T .058 .068 1.47 1.73 2</>Tl .080 .090 2.03 2.29 2</>T2 .138 .148 3.50 3.75 2</>W .2225 .2268 5.652 5.760 3

"WARNING: The 56220 series should be handled with care.The ceramic portion of these thyristors contains BERYL·L1UM OXIDE as a major ingredient. Do not crush, grind, orabrade these portions of the thyristors because the dustresulting from such action may be hazardous if inhaled."

Terminal No. 1- GateTerminal No.2 - CathodeTerminal No.3 - Anode

DDJ]3LJ[JSolid StateDivision

File No. 578

Thyristors2N3870-2N3873,S6400N2N3896-2N3899,S6410N

S6420A,B,D,M ,N

Press-Fit, Stud, and Isolated-Stud Packages

For Low-Voltage Operation-2N3870, 2N 3896, S6420A (40680) tFor 120-V Line Operation-2N3871, 2N3897, S64208 (40681)tFor 240-V Line Operation-2N3872, 2N3898, S6420D (40682) tFor High-Voltage Operation-2N3873, 2N3899, S6420M (40683)t,

S6400N (40937)t, S6401N (40938)t,S6420N (40952)t

Features:• High di/dt and dv/dt capabilities• Low on-stat. voltage at high current levels• Low thermal resistance• Shorted-emitter gate-cathode construction

... contains an internally diffusedresistor between gate and cathode

These ReA types are all-diffused, silicon controlled rectifiers ing, power control, and voltage regulator applications(reverse-blocking triode thyristors) designed for power switch· for heating, lighting, and motor speed·control circuits.

• Center gate construction ... providesrapid uniform gate·current spreading forfaster turn·on with substantially reducedheati ng effects

2N38702N38712N38722N3873S64QON

2N38962N38912N38982N3899S641QN

S6420A56420B564200S6420MS6420N


'NON-REPETITIVE PEAK REVERSE VOLTAGE.Gate Open.

NON·REPETITIVE PEAK OFF·STATE VOLTAGE.Gate Open

'REPETITIVE PEAK REVERSE VOLTAGE.Gate Open .

'REPETITIVE PEAK OFF·STATE VOLTAGE.Gate Open _

ON-STATE CURRENT,TC :: 6SoC·, conduction angle '= 180":

RMSAverageFor other conditions

2N3870 2N3871 2N3872 2N3873 S6400N2N3896 2N3897 2N3898 2N3899 S6410NS6420A S6420B S6420D S6420M S6420N

150 330 660 700 900 V

150 330 660 700 900 V

100 200 400 600 800 V

100 200 400 600 800 V

--------35------22------

See Figs. 3 & 5PEAK SURGE (NON-REPETITIVE) ON-STATE CURRENT,

For one full cycle of applied principal voltage

60 Hz (sinusoidal)

50 Hz (sinusoidal)

For more than one full cycle of applied principal voltage

RATE OF CHANGE OF ON-STATE CURRENTVD: VOROM' IGT = 200 mA,', = 0_5~s (SeeFi9_ 13)

FUSING CURRENT (for SeR protection):TJ = -to to 100°C, t = 1 to 8.3 ms

GATE POWER DISSIPATION·,Peak Forward (for 10 ~s max., See Fig. 8)Peak Reverse .Average (averagingtime = 10 ms max.l ........•...

'TEMPERATURE RANGE",

350300

See Fig. 5

40See Fig. 9

0.5------

Storage . . . . . . . . . . . . . ------- -40 to 125 -----Operating (Case) .............................•. -------- ----- -40 to 100 -------

TERMINAL TEMPERATURE (During sotdering): TTFor 10 s max. herminals and casel -------- 225

* In accordance with JEDEC registration data filed for the JEDEC (2N-series) types.& These values do not apply if there is a positive gate signal. Gate must be open or negatively biased.• T C = 600 for isolated-stud package types.• Any product of gate current and gate voltage which results in a gate power less than the maximum is permitted.• Temperature measurement point is shown on the DIMENSIONAL OUTLINE.


At Maximum Ratings Unless Otherwise Specified and at Indicated Case Temperature (TC)

LIMITS

CHARACTERISTIC SYMBOLFOR ALL TYPES

UNITSUnless Otherwise Specified

MIN. TYP. MAX.

Peak Off·State Current:(Gate open, TC = 100°C)Forward Current (IDOM) at VD = VDROM IDOMReverse Current (IROM) at VR = VRROM

or2N3870, 2N3896, S6420A .. . · . · . .. - 0.2 2*2N3871, 2N3897, S6420B · . .. IROM - 0.25 2.5* mA2N3872, 2N3898, S6420D . · . .... - 0.3 3*2N3873, 2N3899, S6420M,S6400N, S6410N,S6420N · ..... . .. - 0.35 4*

Instantaneous On-State Voltage:iT = 69 A (peak), TC = 25°C . . · . vT - - 1.85* ViT = 100 A (peak), T C = 25°C .. · . - 1.7 2.1

DC Gate Trigger Voltage:VD = 12 V (de). RL = 30 n, TC = -40°C VGT - 1.5 3* VVD = 12 V (de). RL = 30 n, TC = 25°C - 1.1 2For other case temperatures ....... .. .. .. See Fig. 11

DC Gate Trigger Current:VD = 12 V (de), RL = 30 n, TC = ·40°C - 46 80*VD = 12 V (de). RL =30n, TC = 25°C IGT 1 25 40 mAFor other case temperatures ...... . ...... See Fig. 10

Instantaneous Holding Current:Gate open,TC = 25°C .......... . . · . · . · . · . iHO 0.5 30 70 mAFor other case temperatures . . · . · . · . · . See Fig. 7

Gate Controlled Turn-On Time:(Delay Time + Rise Time)For VD = VDROM' IGT = 200 mA, tr = 0.1 {..Is, tgt {..IsIT = 30 A (peak), TC = 25°C (See Fig. 12 & 14.) - 1.25 2

Circuit Commutated Turn-Off Time:VD = VDROM' iT = 18 A, pulse duration= 50 {..Is,dvldt = 20 V l{..Is, -di/dt tq {..Is= -30 A/{..Is, IGT = 200 mA, TC = 80°C(See Fig. 15.) .............. .. .... - 20 40

Critical Rate of Rise of Off-State Voltage:VD= VDROM, exponential voltage rise, dv/dt V/{..IsGate open, TC = 100°C (See Fig. 16.) 10 100 -

Thermal Resistance, Junetion-to-Case:Steady-State

Press-fit & stud types .... · . · . ROJC - - 0.9* °CIWIsolated-stud types .. .... · . · . - - 1

, I. ,"RSO •••---J "",,-VRROM

5 to 15 20 25 ~ 35AVERAGE OR RMS ON-STATE CURRENT [I:TIAV) OR ITIAMSI] -A

92CM-200U

Fig.3-Maximum allowable case temperaturevs. on-state current for press-fit andstud types.

LOAD: RESISTIVERMS ON-STATE CURRENT [ITI RMS)]: 35 A

AT SPECIFIED CASE TEMPERATURE

we.uc GATE CONTROL MAY BE LOST

~I DURING AND IMMEDIATELY>--

"-FOLLOWING SURGE CURRENT

;::1 60 ••.• INTERVAL.w II) 300 ",' I•. >- OVERLOAD MAY NOT BEwH"'- REPEATED UNTIL JUNCTION'>- ,-"'- TEMPERATURE HAS RETURNEDZz TO STEAOY- STATE

~~200 50C RATED VALUE-'" r--...'w""'u ~~~'00"'1'c

><'"e'WZ•.0

=.....TWA ••• O •• , ••• ""o... ." .LOAD: RESISTIVE OR INDUCTIVE ;. :t;..; ,.~

..........;:M~~·~;;;:::~.:~~~~~;=Iffi ,:' iill:;"- [;;. ""hi ~~::::n~::;::. ':C-,: iL; 1i~g .....i!; ....•. :: OJ: ..........•..... "~:P.'!.~f

100 #':0:::'.....:~:;~:.....,1 D ;+.. ' Ol..---.-l"."- CONOU':T1QN

.... ,;:; .... ~..u::;-~ ....

.. :":r.ir.:: ...., ~: [P,t:g~

~ .••.•.••.•.••..•...• L!: .:::':::

~~ 90 ••• ~

,r.::'

e ~=._~ 10 ::' __~ ~~~

~ :~~~~:~~".:

'.:; ::: ~\::;:::::: :: .

;,;""-'

".:~~.... ::. ~~::.. ::\~ "::':1: ~.. . . .

j~::'~""";;;:~:ii:... .. ,?![

::::, .

~=-: '.:::.:..

~=.":.-:~~~;::.-..~ ~~1'i

o 5 10 15 20 2S JO )5AVERAGE OR RMS ON-STATE CURRENT [ITtAVI OR ITIRMSl] -A

91CS·IJ)f,IR2

Fig.5 -Maximum allowable case temperatureVS. on-state current for isolated-studtypes.

PERMITTED P~LSf ~ID~H5FOR INDICATED PEAKFORWARD cue POwER

n6 0-4 02REVERSE GATE CURRENT IlGTRI-A

92CS-I3360R3

oJ----- _

Fig.10-DC gate trigger current (forward) vs.case tempera ture.

Fig.12-Gate-controlled turn-on time vs. gatetrigger curren t.

'ot' fd .•. "

II I

VD: :

o_LL :_L-_I I II I II I I

TI-rl:: ! ....•..90% POINT

In. I I I

o_LL-- I-l---!-- '. -i.--l.-- t,I I Ir--- '.t --i

I

f~:-VGT I__ 10"- POINTo-L - ------- -

92CS-13366R2

Fig.14-Relationship between off-state voltage,on-state current, and gate trigger voltage showingreference points for definition of turn-on time (tgt)·

Fig.15-Relationship berween instantaneouson-state current and voltage showingreference points for definition ofci rcuit commutated turn-off timeIrq)'

Mounting of press-fit package types depends upon aninterference fit between the thyristor caseand the heat sink.As the thyristor is forced into the heat-sink hole, metal fromthe heat sink flows into the knurl voids of the thyristor case.The resulting close contact between the heat sink and thethyristor case assures low thermal and electrical resistances.

A recommended mounting method, shown in Fig. 17,shows press-fit knurl and heat·sink hole dimensions. If thesedimensions are maintained, a "worst-case" condition of0.0085 in. (0.2159 mm) interference fit will allow press-fitinsertion below the maximum allowable insertion force of800 pounds. A slight chamfer in the heat-sink hole will help

PACKAGETYPE OF MOUNTING THERMAL

EMPLOYED RESISTANCE-oCIW

Press-fitted into heat sink.IMinimum required thickness 0.5of heat sink = 1/8 in_ (3.17 mm)

Soldered directly to heat sink.(60-40 solder which has a melt·

Press-Fit ing point of 188°C should be 0.1 to 0.35used. Heating time should besufficient to cause solder toflow freely).

Directly mounted on heat sinkStud with or without the useof heat- 0.6

sink compound.

center and guide the press·fit package properly into the heatsink. The insertion tool should be a hollow shaft having aninner diameter of 0.380 ± 0.010 in. (9.65 ± 0.254 mm) andan outer diameter of 0.500 in. (12.70 mm). These dimen·sions provide sufficient clearance for the leads and assurethat no direct force will be applied to the glass seal of thethyristor.

The press-fit package is not restricted to a single mountingarrangement; direct soldering and the use of epoxy adhesiveshave been successfully employed. The press-fit case is tin-plated to facilitate direct soldering to the heat sink. A 60-40solder should be used and heat should be applied only longenough to allow the solder to flow freely.

In the United Kingdom, Europe. Middle East, and Africa, mounting-hardware policies may differ; check the availability of all itemsshown with your ReA satesrepresentative or supplier.

DIMENSIONAL OUTLINE FOR TYPES2N3870,2N3871,2N3872,2N3873,S6400NPRESS-FIT



MIN. MAX. MIN. MAX.

A - 0_380 - 9.65</>0 0.501 0.510 12.73 12.95</>°1 - 0.505 - 12.83 2</>°2 0.465 0.475 11.81 12.07

J - 0.750 - 19.05M - 0.155 - 3.94 1

</>T 0.058 0.068 1.47 1.73</>T1 0.080 0.090 2.03 2.29

NOTES:1. Countour and angular orientation of these terminals is optional.2. Outer diameter of knurled surface.

DIMENSIONAL OUTLINE FOR TYPESS6420A, B, D, M, NISOLATED-STUD

TERMINALNO.3

opT

REFERENCE I

JPOINTFOR CASE

TEMPERATURE

MEASUREMENT

J

SEATING PLANE

NOTES:1. Contour and angular orientation of these terminals is optional.2. ¢W is pitch diameter of coated threads. Ref: ASA 8,.1·1960.

Recommended torque: 50 inch-pounds.3. A chamfer or undercut on one or both ends of hexagonal portion

is optional.4. Isolating material (ceramic) between hex (stud) and terminal

No.3 is beryllium oxide.

TERMINAL CONNECTIONS FOR All TYPESNO.1 - GateNo.2 - Cathode

Case, No.3 - Anode

DIMENSIONAL OUTLINE FOR TYPES2N3896,2N3897,2N3898,2N3899,S6410NSTUD


MIN. MAX. MIN. MAX.

A 0.330 0.505 8.4 12.8

</>°1 - 0.544 - 13.81E 0.544 0.562 13.82 14.28F 0.113 0.200 2.87 5.08 3J - 0.950 - 24.13M - 0.155 - 3.94 1N 0.422 0.453 10.72 11.50

</>T 0.058 0.068 1.47 1.73</>T1 0.080 0.090 2.03 2.29</>W 1/4-28 Ur~F-2A 1/4-28 UNF-2A 2

NOTES:1. Contour and angular orientation of these terminals is optional.2.<PWis pitch diameter of coated threads, Ref: ASA 81.1-1960.

Recommended torque: 50 inch-pounds.3. A chamfer or undercut on one or both ends of hexagonal portion

is optional.

INCHES MilliMETERSSYMBOL NOTES

MIN. MAX. MIN. MAX.

A - 0.673 - 17.09</>0 0.604 0.614 15.34 15.59</>°1 0.501 0.505 12.72 12.82

E 0.551 0.557 13.99 14.14F 0.175 0.185 4.44 4.69 3J - 1.055 - 26.79M - 0.155 - 3.94 1Ml 0.200 0.210 5.08 5.33 1N 0.422 0.452 10.72 11.48

</>T 0.058 0.068 1.47 1.73</>Tl 0.080 0.090 2.03 2.29</>T2 0.138 0.148 3.50 3.75</>W 1/4-28 UNF·2A 1/4·28 UNF·2A 2

WARNING: The ceramic of the isolated·stud packagecontains beryllium oxide. Do not crush, grind, orabrade this part because the dust resulting from suchaction may be hazardous if inhaled. Disposal shouldbe by burial.

OOm3LJDSolid StateDivision

Thyristors2N681-2N690

RCA-2N681 through 2N690 con-

trolled-rectifiers are all-diffused,

three-junction, silicon devices for use

in power-control and power-switching

applications requiring blocking-volt-

age capabilities to 600 volts and

forward-current capability of 16 am-

peres (average value) or 25 amperes

(rms value).

• All-diffused construction - assures exceptionalun iformi ty and stabi Iity af characteristiCs

• Mul ti-diffusion process - permits precise controlof individual junction parameters

Symmetrical gate-cathode construction - providesuniform current density, rapid electrical con-duction, and efficient heat dissipation

Direct-soldered internal constructionexceptional resistance to fatigue

Each unit aged at maximum ratings to assuredependable performance

All-welded construction and hermetic sealing

• Shorted emitter gate-cathode construction

• Low leakage currents, both forward and reverse

• Low forward voltage drop at high current levels


• Exceptionally high stud-torquecapabil ity throughuse of high-strength copper-alloy stud

Transient Peak Reverse Voltage(Non-Repetitive), vRM (non-rep}O ••.•••

Peak Reverse Voltage(Repetitive), vRM (rep)b .

Peak Forward Blocking Voltage<Repetitive), vFBOM (rep)C .

Forward Current:For case temperature (TC> of +650 C,

and a conduction angle of 180°, IFAVd.RMS value, lFRMSe .For other case temperatures and

conduction angles .Peak Surge Current, iFM (surge)f:

For one cycle of applied voltage .For more than one cycle

of applied voltage .Peak Gate Power, PGM9 .......•....Average Forward Gate Power, PGAVh .Peak Forward Gate Current, iGKMi .Peak Gate Voltage:

Forward, vGKMk .Reverse, vKGMk ••••••..•••••.••

Temperature:Storage, T stg .Operating, Case#, TC .Free Air, TFA .

CONTROLLED·RECTIFIER TYPESUNITS

2N681 2N682 2N683 2N684 2N685 2N686 2N687 2N688 2N689 2N690

35 75 150 225 300 350 400 500 600 720 volts

25 50 100 150 200 250 300 400 500 600 volts

.. 600 .. volts

..• 16 .. amp

• 25 .. amp

• See Fig.2 ..of 150 .. amp

.. See Fig.3 ..

.•. 5 .. wattsof 0.5 .. watt.•. 2 .. amp

of 10 .. voltsof 5 .. volts

• -65 to +150 .. °c.•. -65 to +125 • °cof See FigA ..

Electrical and Thermal Characteristics at Maximum Electrical Ratings(unless otherwise specified), and at Indicated Case Temperature, TC'

CONTROLLED-RECTIFIER TYPES2N681 2N682 2N683 2N684 2N68S 2N686 2N687 2N688 2N689 2N690 UNITS

Minimum Forward Breakover Voltage,vBOOm:At TC = +1250 C .

Maximum Average <DC) ForwardBlocking Current, IFBOAY":At TC = +1250 C •............... 6.5

Maximum Average (DC) ReverseBlocking Current, IRBOAY P:At T C = +1250 C 6.5

Maximum Average ForwardYoltage Drop, YFAyq:At a Forward Current of 25amperes and a TC = +650 C .•••••••• -.~_----_~~_---

Maximum DC Gate-Trigger Current,IGTr:At TC = +1250 C ••••••.••••••••• -••-.. -_...

DC Gate-Trigger Voltage, YGTs:Maximum at TC = -650 to +1250 C •••••• -•••~_------------Minimum at TC = +1250 C •••••••••• -••~_--------_~~

Holding Current, iHOO t:

Typical at TC = +1250 C .Maximum Thermal Resistance.

Junction-to-Case,6J_Cu •••.....•. •• 2

# Measured at the center of any of the six major faces on the perimeter of the hexagonal flange.

DIMENSIONAL OUTLINEJEDEC TO-48

400 500 600 volts

4 3 2.5 ma

4 3 2.5 ma

.. volt

.. ma

.. volts.. volt

.. ma

•. °C/watt

o-1NlplNlpf-o(I)

CATHODE l(LONG GATE

~.'C15"f","'ANODE

TERMINAL(STUD)

Note 1: Complete threads to extend to within 2-1/2threads of head. Dio. of unthreoded portion 0.249"maximum, 0.220" minimum.

Note 2: Angular orien'tation of these terminals IS un-defined. Square or radius on end of terminal is optional.

Note 3, 1/4-28 UNF-2A. Mox;mum p;tch d;a. of platedthreads sholl be basic pitch dia. 0.2268 ", minimumpitch dia. 0.2225 ". Ref. (Screw Thread Standards forFederol Serv;ces 1957) Hondbook H28 1957 P l.Note 4: A chamfer (or undercut) on one or both ends ofhexagonal portion is optional.

In the UnIted Kingdom, Europe, Middle East, and Africa, mounting-hardware policies may diHer; check the a\lailabi.lity ot all itemsshown with your ReA sales representatl\le or supplier.

Suggested Mounting Arrangement for Insulating Types2N681 - 2N690 from Heat Sink.

CATHODE" W'Il~·~~'T--I

I

YF~OM{rep)

SUPPLY FREQUENCY" 60 CPS SINE WAVECASE TEMPERATURE (TCl •.650 CLOAD" RESISTIVE

:~~~~~TJV~O=~~~OR~~~~~i?i;:~f •.~l~Dt"_~~~~A~~~DVALUE

150

~125

I;;~ ~~~ K>O ........

I--a~ -l!i I 75"'~i1:e-~~~d

25

I 2 4 • • 2 4 • •

Goo-CONDUCTION

ANGLE

5 10 15 20AVERAGE FORWARD CURRENT (I F)-AMPERES

Fig.2 'JZCS-II'JZ8R3

[~'lllllllrN!A~T1U~R!AL~C!00!Li'!NG~.~~~~~~SINGLE-PHASE OPERATION.

15 gg~~~8[~~ND~~~kfl~I~O; STUDMOUNTED DIRECTLY ON HEAT SINK.

HEAT SINK: 1/16" THICK COPPER WITHA MAT-BLACK SURFACE AND

~~ '1 ~.s'4: THERMAL EMISSIVITY OF 0.9;OW --l'S" :j- '<:~~ 10 4J

:d 'X"<l >'" <lW ~

~!j~~ 5~~X'"<l='~u

o 100 200 300 400 500 600INSTANTANEOUS APPLIED FORWARD OR

REVERSE BLOCKING VOLTAGE (YFBO OR vRBOl-VOLTS92CS-1l91~R2

[]\lcn3LJ1]Solid StateDivision

Silicon Controlled Rectifierfor High-Current Pulse ApplicationsFeatures:

• Direct Soldered Internal Construction - Assures Exceptional ResistancetoFatigue

The S6431M (formerly RCA type 40216) is an all-diffused,three-junction silicon controlled rectifier (SCR) designedespecially for use in radar pulse modulators, inverters,switching regulators, and other applications requiring a largeratio of peak to averagecurrent.

It is especially constructed for rapid spread of forward cur-rent over the full junction area to achieve a high rate ofchange of forward current (dildt) capability and low switch-ing dissipation.

RATINGS CONTROLLED.RECTIFIER TYPE UNITS

S6431M

Transient Peak Reverse Voltage (Non-Repetitive), vRM(non-rep)O •••••••••••••••••••••••••••••••.• 720 volts

Peak Reverse Voltage (Repetitive), vRM (rep)b •••.••.•.•. 600 voltsPeak Forward Blocking Voltage (Repetitive), vFBOM

(rep)C ••••••.•.•...•.•••.•••.••...•...••. 600 voltsForward Current:

For case temperature of +650C, RMS value, IFRMSd ..... 35 amperesPeak Pulse Current (See Fig.7> .................... 900 amperesRate of Change of Forward Current, di/dt" •••.•.••.•.••. See Fig.7Dynamic Dissipation:

For case temperature of +650 C ................... 30 wattsFor othe~ case temperatures ..................... See Fig.4

Gate Power: IPeak, Forward or Reverse, for 10 I-lS duration, FGM ,

(See Figs.lO and 111 ••..•.•..•..•••..••....• 40 wattsAverage, POAV9 ............................ 0.5 watt 1~·

Temperature:Storage, Ts~ ••••••••••••••••••••••••••••••• -65 to +150 °cOperating ( ase), TC' •.•••••••••..•••.•.•••••• --65 to +125 °c

CRITICAL d,/dt ~

"

*=0.63 V~B

t: RC

"//-

Tj 63% OF VFB

0- 1i--------- t ------j

Characteristics at Maximum Ratings (unless otherwise specifiecl),ancl at Inclicatecl Case Temperature (TC)

Forward Breakover Voltage. VBOOh

At T C = +1250 C ••••••••••••••••••••••••••Instantaneous Blocking Current,

At TC = +1250 C .Forward. iFBo' ••••••••••••••.••.••••..•Reverse, iRBO

k .Forward Voltage DroP. vFm •••••••.•....•.••••••DC Gate-Trigger Current. IGT":

At TC = +250 C(See Fig.lOl ••••••••••••.••.••DC Gate-Trigger Voltage. VGTP:

At TC = +250 C (See Fig.lOl •••••••••••••••••.Holding Current. iHOO

q:At TC = +250 C ••••••.•••••••••••••••.•.•.

Critical Rate of Applied Forward Voltage, Criticaldv/dt' ..•..•••••...•.••••..••..•.•••.•••

VFB = vBOa (min. value), exponential rise, andTC = +1250 C(See wave shape of Fig.])

Turn-On Time, tonS, (Delay Time + Rise Time) .VFB = vBOO (min. value). iF = 30 A. IGT = 200 mA.

O.llls min. rise time. and TC = +250 C(See waveshapes of Fig.2l

Turn-Off Time, tofft

t (Reverse Recovery Time + GateRecovery Time) .iF = 18 A. 50 IlS pulse width. dVFB/dt = 20 VIlls.

di,jdt = 30 A/lls. IGT = 200 mA. and TC = +800 C(See wave shapes of Fig.3)

Thermal Resistance, Junction-to-Cas€ .

IdVF8/dt~1

I

dir Idt \

~\\

II VAB----:~IIII

I,III-+------I I

It 9' ----..j

ItOff~

I

Min. Typ.

600 -

- -- -

See Fig.5

1 25

- 1.1

0.5 20

20 50

Max.

- volts

10 mA10 mA

80 mA(dcl

2 volts(dcl

70 mA

- volts Imicrosecond

- microsecond

NOTE: FORWARD AND REVERSE LOSSES INCLUDED.'40

'20•......

;;::::..•.... •.•....

;-' 100 .•.•..•.I

w....;::

'5 SO

~.•.•..•.

60r--.

~w 40V>

320

o 4 8 12 16 20 24 28 32

MAXIMUM DYNAMIC POWER DISSIPATION-WATTS (AVERAGE)

92LS-1893

TC : 65·CGATE PULSE: 500 mATIMES INDICATED ARE MEASURED FROMBEGINNING OF CURRENT PULSE.

TIn II'" 1000 I~JLI-b~,~'" ~'"4,I~~~~ f1.~'"

,,~ .'" ",?' "'?~

'""- ,,~'v''" 'l-~'.• 800 "'.I II... \~~'Jo

0- 1/z 600'"'"'"G 1.1 .:+-0 400'" V I!~'"

~~ II~ 200

0.5~

III' III20 30

FORWARD VOLTAGE (vF)-VOLTS

Fig. 5-Forward voltage-current characteristics asa function of time.

22 71.51'5

I20

2,s

l,s

1 2.5 ••s18

1 I::: I II I~

16

I~ 14

1 J 113uS

" I / /~::i / 3.5,sC

" 12 I /=J I

~ I / / / 1/ 4,s~" 10 I J /~ / / I I

~ 8-5,s

0.51'5 I 77 J / /io,s

II I I 7 ITJ -J #~Ous6 II II, 'IV.I '#

I / I '/, f04

j 11/ /..1.'U

M NOTE: TIMES INDICATED ARE MEASUREO r2 FROM BEGINNING OF CURRENT

PULSE.

92LM-lItOFig. 6-lnstantaneous forward dissipation-forward current character-

istics asa function of time.

TC:650C1000

900

§800

!Ii 700

i600

500

'" 400~'"x

300~200

100

0.1

JE.lI,J-

Ipeilk 7\~ 4000I 1

'\11 \ BASE WIDTHr"- "t:3 3000

1'\ 1\~ ~ '\

B~SE .116;,~ 2000z ~

t'-,...-0

;::

~ "' •..... I'---~ 1000 NOTE: FOR 30 WATTHVER- r-AGE FORWARO OISSIPATIONAT Tc .6S"C (REVERSE f-

BArT'OISSIPATION NOT INCLUOEO

400C 8' ,s BlASE llDTJ i

'.VSEl

"0fALL 2 liS 10kz II '\1~300

\'~RISE --Ll- ...FALLI-

w"-~

::l~!200016" BASE'MOTH "

BAS,E,WIDTH.••

~ _RISE2Ils ~~

tALLt" I I ~~;::

;::~ 1000

NOTE: ..•••......FOR 30 WATTS AVERAGE FOR- ..•....•WARO OISSIPATION AT TC ' 6S' C(REVERSE OISSIPATION NOT INCLUOEO)

AVERAGE GATE~IS,SIP.U~~ UMIT

I I 11I I II

MAXIMUM VOLTAGE AT WHICHNO UNIT WILL TRIGGER FOR

TJ:+ 125 0 C

- MAXIMUM GATE TRIGGER

±- CURRENT FOR INDICATED

.25·C _ JUNCTION,TTEMr~~~~URE,ITJIIII TJ'-65'CI I111I 1 "I·

II 1I111111114 6 8 2 4 6 8 _,- 2

0.1 1.0

File No. 247 S6431 MREVERSE

MAXIMUM .. j 40GATE

:RESISTANCE;., _. - - .~~:I

0.6 0,4 0.2 0REVERSE GATE CURRENT - AMPERES

92C5-13360

Fig. 11-Reverse gate characteristics.

v- ,""THR'Ao

DF6Bcv---- MICA INSULATORAV"'LABUATPVOL'SHEDo HMmWAREPR1C€S



RUER(NCEPOINT FOR CASE

, TE",r-(R/lfURE. -1 MEllSUR(~(NT

_..J"" SEATING PLANE

INCHES MILLIMETERS

SYMBOL NOTESMIN. MAX MIN. MAX.

A O.3Xl 05<)5 .A 12.8 -00, - 0544 - 13.81 -, 0.5014 0.562 13 82 14.28 -F 0.113 0200 287 5.08 3J 0.950 1.100 24.13 27.94 -M 0215 0225 ". 5.71 ,N 0422 0·153 1072 11.50 -oT 0058 0068 , 47 1.13 -

¢T, 0.138 0148 351 3_15 -OW Y.-28 U!\lF·2A Y.-28 UNF-2A 2

NOTES1 Contou, .nd '''II"r., 0"e,,18110" of ,hes.e le,m,"el,

Pilchd,emel.,ol ': 28 UNF 21\,(co.tedl 'h,uds(ASA 81. 1-1960f.

A chamle. 0. u"d".cul 0" 0". O. bo,h e"ds 01 he_agonel pon,onisop,io"el.

No.1 - GateNo.2 - Cathode

Stud, No.3 - Anode

OOC05LJDSolid StateDivision

2N1842A2N1843A2N1844A

Thyristors2N1845A 2N1848A2N1846A 2N1849A2N1847A 2N1850A

RCA-2N1842A-2N1850A con t ro 11 ed-rec t i fi ersare all-diffused, three-junction silicondevices for use in power-control and power-switching applications requiring blocking-voltage capabilities to 500 volts andforward-current capability of 10 amperes(average value) or 16 amperes (rms value).FEATURES-

• all-diffused construction-assures exceptionaluniformity and stabil ity of characteristics

• multi-diffusion process-permits precise. controlof individual junction parameters

• direct-soldered internal construction-assuresexceptional resistance to fatigue

• shorted emitter gate-cathode construction• each unit aged at maximum ratings to assure

dependable performance• symmetrical gate-cathode construction-provides

uniform current density, rapid electrical con-duction, and efficient heat dissipation

• designed to meet stringent military environ-mental and mechanical specifications

• exceptionally rugged terminals

:':-\IRM(non-r~1

"\/RM(r.p)

All-Diffused Types for

Power-Control and

Power-Switching Applications

1JJEDEC TO-48

.-hermetic seals• low leakage currents, both forward and reverse• welded construction• low forward voltage drop at high current levels• low thermal resistance• except ionall y high stud-torque capabi Iity through

use of high-strength copper-alloy stud

CATHODE

" $" I.l'l., -:-

,,~F~M(repl

Fig.l - Typical £-1 Characteristic of SiliconContra lled-Rect ifier.

. CONTROLLED-RECTIFIER TYPERATINGS SYMBOLS REF. UNITS2NISq2A 2NISq3A 2NISqqA 2NISq5A 2NISq6A 2NISq7A 2NISqSA 2NISq9A 2NIS50A

TRANSIENT PEAK vAMREVERSE \GLTN:;E 1 35 75 150 225 300 350 400 500 600 volts(NON- REPETI TI VE) (non-rep)

PEAK REVERSE \QLTAGE vRM (rep) 2 25 50 100 150 200 250 300 400 500 volts( REPETITIVE)PEAK FORWARD IL()(](ING vFIDM 3 600 volts\QLTAGE (REPETITIVE) ( rep)AVERN:;E FORWARDaJRRENT· 1FAV 4

For a case temperaturdFof +800 C and a con-ducti on angl e 0 f 1800 10 ,

MJl

For other case tem-peratures and con·

See Fig. 2duction angles .PEAK SURGE QJRRENT: iFM(surge) 5

For one cycle of125appli ed vol tage . MJl

For more than one eyel eSee Fig. 3of applied vol tage , .

PEAK GATE POWER PGM 6 5 • watts

AVERN:;E GATE POWER PGAV 7 . 0.5 . watt

PEAK FORWARDi(J{M 8 · 2 . anp

GATE aJRRElIITPEAK FORWARD vK(},1 9GATE \QLTAGE:

Forward , 10 , voltsReverse . 5 • volts

Ta1PERA1URE:Storage Tstg - I -65 to +125 . OCOperating ( Case)# TC - . -65 to +125 OCOperating (Free- ai r) TFA - · See Fig. 4

Electrical and Then'Ii],1 Characteristics at Maximum Electrical Ratings(unless othe1'Wise specified), and at Indicated Case Temperature, 'I'C

CHARACTERISTICS SYMBOLS. TC CONTROLLED-RECT I F I ER TYPE UN ITS

REF. °c 2NISQ2A 2NJSQ3A 2NISQQA 2NISQ5A 2NISQ6A 2N ISQ7A 2NJSQSA 2NJSQ9A 2NJS50AMinimum Forward vllXl 10 +125 25 50 100 150 200 250 300 400 500 voltsBreakover Vol tage'f;fiiimum .~erage

IFBOAV 11 +125 22.5 19 12.5 6.5 6 5.5 5 4 3 ma~;:~ward BlockingrrentMaximum Average

IRBOAV 12 +125 22.5 19 12.5 6.5 6 5.5 5 4 3Reverse Blocking maCurrent

Maximum AverageVFAV 13 +80 1.2 voltsForward Vol tage . .

DropMaximum OC Gate IGT 14 +125 , 45 • maTrigger CurrentOC Gate-Trigger VGr 15Voltage:

{-40 . 3.5 . voltsMaximum -65 . 3.7 . volts

{+125 , 0.25 . voltMinimum +100 , 0.3 · volt

Holding Current iHOO 16 +125 · 8 · ma(Typi cal)

Maximum Thermal8JC 2 t °ClwattResistance, 17 - .

Junction- to-Case

* Numerical References are to Table of Terms, Symbols, and Definitions on page 4.

N Measured at the center of any of the six major faces on the perimeter of the hexagonal flange.

uo 1.-----r--..I'80·CONDUCTION

ANGLE

OSlO 15 20AVERAGE FORWARD CURRENT (IFAV )-AMPERES

92CS-11905R3

Fig. 2 - Rat ing Chart for Types 2N1842Athrough 2N1850A.

~ -=~_::--::;NATURAL COOLING.~. - •.•- .-~ SINGLE-PHASE OPERATION.

_ . .: ;:0::-::;:-: CONDUCTION ANGLE= 1800

-: ,,:;-.:;CONTROLLED-RECTIFIER STUD--=::::: -:-:::::'" .;:::-: 'It: ::::-i MOUNTED DIRECTLY ON HEAT SINK.

9 :~~ -:::----" ~_ ~ HE:TMi~~~~~I~;-;~~~~C~O~~EORWITH:-:~._ THERMAL EMISSIVITY OF 0.9

Fig.4 - Operat ion Guidance Chartfor Types 2N1842A through 2N1850A.

o 100 200 300 400 500INSTANTANEOUS APPLIED FORWARD OR

REI/ERSE BLOCKING VOLTAGE (vFeo OR vRsol-VOLTS92CS-II908RI

Fig. 6 - Typical Forward andReverse Leakage Charac-teristics for Types 2N1842A through '2N1850A.

SUPPLY FREQUENCY 1I: 60 CPS SINE WAvECAS[ TEMPERATURE (TC) =80· CLOAO-RESISTIVE~~~~V~C:::R~E~~~~~~;:~~~v~~~J:::~~~~~ttlEOVALUE

150

125

""'"~~ 100a~ ....••......... -~,l75 --:1 50....:t~

25

0 , . 6 • , . 6 •

Fig. 3 - Surge Current Rating Chartfor Types 2N1842A through 2N1850A.

_::~.,-r:r';.:....o 0.5 I 1.5 2 2.5 3INSTANTANEOUS FORWARD VOLTAGE DROP (vr!-VOlTS

92CS-1l912R1

Fig.5 - Maximum Forward Characteristicsfor Types 2N1842A through 2N1850A.

o-75 -~ -25 a 25 ~ 75 100 125 1~

CASE TEMPERATURE (TC)-OC

Fig. 7 - Gate Trigger-Current Characteristicfor Types 2N1842A through '2N1850A.

MA I U 'GATE q GE REOT TRIG Eft A UNITS RED

Fig.8 - Gate Trigger- Vol tage Charaeterist iesfor Types 2N1842A through 2N1850A.

L,."'""'",OF"e--MICA INSULATORAVAllA8I.EATPU8ll$l-l£Do HAROWAREPAICES

~"'''.". (CHASSIS)

eDF3H

f. 'NSULATlNGSUS"'NG~ 0.0.-0.315 in. IB.OO mm) MAX.

~ :~~~~~;~:U~'~:E~' (1.53mm)MAX.DF68 --.fO'\ HARDWARE PRICES

",v~,I:"~LlfN:TU~:L~~~D~~ ~:~CTORHAROWARE I'flICES • "" •••V •••'L ••.• l£ ATPUaLl$HEDo HAROWA,"'E PRICES

NRll.A ~}LOCK WASHER ~

NA38B ~HEXNUT \OJ

In the United Kingdom, Europe. Middle East, and Africa. mounting-hardware policies may differ; check the availability of all itemsshown with your ReA sales representative or supplier.

Sugges tedMount ing Arrangement for Insulat ing Types'lN1842A- '2N1850A from Heat Sink.

n~.544 ~MAX. ~L-:'

1~gr- rENOTE 2

.LO. 1--:-.140

.:~~oIAT-- ~-.L~l075 T

1

t~~~

.060 ICIA 875

~T1NG453 PLANE

A22j

HoTE I: COMPLETE THREADS TO EXTEND TO WITHIN 2 1/2THREADS OF HEAD. 01 A. OF UN THREADED PORTION O.2ij9"MAXIMUM. 0.220" MINIMUM.HoTE 2: ANGULAR ORIENTA,ION OF THESE TERMINALS ISUNDEFINED. SQUARE OR RADIUS ON END OF TERMINAL ISOPTIONAL.HoTE 3: 1/ij-28 UNF-2A. MAXIMUM PITCH DIA. OF PLATEDTHREADS SHALL 8E BASIC PITCH DIA. 0.226B". MINIMUMPITCH DIA. 0.2225". REF. (SCREW THREAD STANDARDSFOR FEDERAL SERViCES 1957) HANDBOOK H28 1957 Pl.HoTE~: A CHAMFER (OR UNDERCUT) ON ONE OR BOTHENDS OF HEXAGONAL PORTION IS OPTIONAL.

[Il(]5LJDSolid StateDivision

Thyristors2N3650 2N36512N3652 2N3653

S7430M

RCA·2N3650 to 2N3653, inclusive, and the S7430M* areall·diffused silicon controlled rectifiers (reverse-blockingtriode thyristors) intended for high-speed switching applica·tions such as power inverters, switching regulators, andhigh·current pulse applications. They feature fast turn-off,high dv/dt, and high di/dt characteristics and may be used atfrequencies up to 25 kHz.

The 2N3650 to 2N3653 have forward and reverse off-statevoltage ratings of 100, 200, 300, and 400 volts, respectively.Type S7430M has a forward and reverse off-state voltagerating of 600 volts.

• Fast turn·aff time -15 I.IS max.

• High di/dt and dv/dt capabilities

• High peak.current capability• Shorted.emitter gate.cathode construction• Forward and reverse gate dissipation ratings

• AII.diffused construction - assures exceptionaluniformity and stability of characteristics

'NON-REPETITIVE PEAK REVERSE VOLTAGEGate Open , ••• , •••.•••••••••.• , ••••••.•••

NON-REPETITIVE PEAK FORWARD VOLTAGEGate Open .•••••••• , ••••••••••• ,., .• , ••••

'REPETITIVE PEAK REVERSE VOLTAGEGate Open •••••••••••••...••••••• , •.•. , ••

'REPETITIVE PEAK OFF-STATE VOLTAGEGate Open ••••••••• , •• , •••.••.•••••.•.•.•

'PEAK SURGE (NON-REPETITIVE) ON-STATE CURRENT:For one cycle of applied principal voltage (60 Hz, sinusoidal)

ON-STATE CURRENT:For case temperature (Te) = 250C

Average DC value, conduction angle of 1800 ••••••••

RMS value ••.••••••••••..•••••.••••••••••'RATE-OF-CHANGE OF ON-STATE CURRENT:

VDM ~ v(BQ)O' IGT ~ 200 mA. t,- ~ 0.1 fJ-S(See Fig. 2)'GATE POWER DISSIPATION

PEAK FORWARD (for 10 fJ-S max.) ••.•.•.••••.••..AVERAGE (averaging time ~ 10 ms, max.) •.•••.•••••

'TEMPERATURE RANGEStorage .•......•.•......................Operating (Case). •••••••••••••••••.••.••••••Soldering (10 s max. for case) ..•.....•.•........

'In accordance with JEDEC registration data format (J&-14, RDFU--applies to the JEDEC (2N-Seriesl types only.

35·AMPERE SILICONCONTROLLED CATHODE

RECTI FI ERS GATE

Fast Turn-Off Typesfor Inverter andPulse Applications

V

V

V

V

A

AA

A/fJ-s

WW

°C ~°C C/l°C (')

:J;:)",'

11-73

• Symmetrical gate.cathode construction - providesuniform current density, rapid electrical conduction,and efficient heat dissipation

• Hermetic construction


2N3650 2N3651 2N3652 2N3653 S7430M

VRSOM 150 300 400 500 700

VDSOM 150 300 400 500 700

VRROM 100 200 300 400 600

VDROM 100 200 300 400 600

ITSM .- 180 ~

IT(AV) .. 25 ~IT(RMS) .- 35 •.di/dt .- 400 •.PGM .. 40 ~PG(AV) .- 1 •.

.. -65 to 150 •.

.- -65 to 120 ~.- 225 ~

ELECTRICAL CHARACTERISTICS, At Maximum Ratings and at Indicated Case Temperature (TC)Unless Otherwise Specified

LIMITS

CHARACTERISTIC SYMBOLType Type Type Type Type

2N3650 2N3651 2N3652 2N3653 S7430M UNITS

MIN. TYP MAX. MIN. TYP. MAX. MIN. TYP. MAX. MIN. TYP. MAX. MIN. TYP. MAX.

INSTANTANEOUS FORWARD BREAKOVERVOLTAGE: V(BOlO 100 - - 200 - - 300 - - 400 - - 600 - - V

Gate Open, T C = 120 oC

PEAK OFF-STATE CURRENT:(Gate ()pen, T C = 120 °C) 100M - - 6 - - 6 - - 5.5 - - 4 - - 3FORWARD, VOO = VOROM ••AREVERSE, VRO = VRROM IRROM - - 6 - - 6 - - 5.5 - - 4 - - 3

INSTANTANEOUS ON·STATE VOLTAGE:vT - - 2.05 - - 2.05 - - 2.05 2.05 2.05For iT" 25 A, T C = 25 °c - - - - V

DC GATE TRIGGER CURRENT:Vo = 6 V (DC), RL = 411, TC = 25 °c - 80 180 - 80 180 - 80 180 - 80 180 - 80 180

Vo = 6 V (DC), RL = 211, T C = -65 OCIGT

on••A- 150 500' - 150 500' - 150 500' - 150 500' - 150

DC GATE TRIGGER VOLTAGE:Vo = 6 V (DC), RL = 411 , TC = 25 0c - 1.5 3 - 1.5 3 - 1.5 3 - 1.5 3 - 1.5 3

Vo = VOROM, RL = 20011, TC = 120 °c VGT 0.25' 0.25 0.25' - 0.25' - 0.25V- - - - - - - -

Vo = 6 V (DC), RL = 211, T C = -65 °c - 2 4.5' - 2 4.5' - 2 4.5' - 2 4.5' - 2 4.5

INSTANTANEOUS HOLDING CURRENT:Gate OpenAt TC =25 0c iHO

- 75 150 - 75 150 - 75 150 - 75 150 - 75 150 lOAAt TC =-65 °c - 150 350 - 150 350 - 150 350 - 150 350 - 150 350

CRITICAL RATE-OF-RISE OF OFF-STATEVOLTAGE:Voo = VOROM dv/dl 200 - - 200 - - 200 - - 200 - - 200 - - V/"sExponential rise, TC = 120 0c,

(See Fig_ 4.)

CIRCUIT C<J,lMUTATEO TU RN-OF FTIME (Rectangular Pulse):VOX = VOR<J,l , iT = 10 A (pulseduratioo = 50 "s), IGT = 200 lOA lq - 11 15 - II 15 - 11 15 - 11 15 - II 15 "sat turn-OIl, -<li/dt = 5 AI"s,dv/dt = 200 V/"s, VRX = 15 min.,VGK = 0 V (at turn-otf),TC = 120 OC (See Fig_ 4 & 5)

CIRCUIT COMMUTATEO TURN-OFFTIME (Half-Sinusoidal Waveform):VOX = VOROM, iT = 100 A (pulse

lq 12 15' 12 15' 12 15' 12 15' 12 15duratioo = 1.5 "s), IGT = 200 lOA - - - - - "sdv/dt = 200 V/"s, VRX = 30 V min.,VGK = 0 V (at turn-off),TC = 115 °c (See Fig. 6 & 7)

THERMAL RESISTANCE:Jlllctioo-to-Case eJ-C - - 1.7 - - 1.7 - - 1.7 - - 1.7 - - 1.7 °CIW

r.~ I"-------l~---r'

, I

VRSOM----l ~VRROM

/dvd'""'I

I

VDX-------- :----i-o

~VRX VRXM

i III

'TX. I :L I I- __ , __ -1- ,------0

I 1fRXM -----r- I

Iff I • 19, ----t

1 II------- I

q------l

~"0631'" . I

t" RC

Fig. 4-Relationship between off-state voltage, reverse volt-age, on-state current, and reverse current, showingreference points defining turn-off time (tgJ, rectan-gular pulse.

SUPPLYVOLTAGE

~II$UPPl Y

VOLTAGE

II~

*FQR ADDITIONAL INFORMATIONON GATE TRIGGER CIRCUITS, Ere.REFER TO JEOEC STANDARD

No.7 SECTION 6.204.2.

0 _

VOLTAGEANODE· CATHODE I

III VRX. I~'q---.l

I

Fig. 6-Relationship between off-state voltage, reverse volt·age, on-state current, and reverse current showingreferencepoinrs for specification oftum-off time (tq),half sine wave pulse.

CURRENT WAYEFORM'T:=ru--J2:--J

35 .• (RM5)LIMIT

~ 100 1~

PEAK ON·STATE CURRENT (lTM)-A

~II

COOLING CONSIDERATIONSThe overall thermal resistance, case to air, needed tooperate .these devices at a given current and a specificambient air temperature is shown in Fig. 8. For example:dissipation of 20 watts and an ambient air temperature of43 °c (110 OF), the required thermal resistance, case toair, is 2 °C/W. This required case-ta-air thermal resis-tance included both case-ta-heat sink and heat sink-to-air thermal resistances.

Typical values of case-ta-heat sink thermal resistancesfor different mounting arrangements are shown in Table l.Thermal resistance characteristics of commercial heatsinks are contained in various manufacturers' data sheets.

CURRENT WAVEFORM

ITM -A-A0-' L...J \-tt-J !

o toO 200 )0()

RATE·(F-RISE (IF REAPPLIED OFf-SlAlE VOLlAGE (d.I.t)-Y/lI• ""."',

CURRENT WAvEFORM

11110-,,-1"\.0-1 L...J \-tt-J

OFF-STATE VOLTAGE (VDX)" 600 VRATE·Of·RISE OF OFF-STATE VOLTAGE

(d./dt) •• 200 V/~ •.PEAK REVERSE VOLTAGE (VRXM)" 200 VHALF·SINUSOIDAL CURRENT WAVE FORMCASE TEMPERATURE (Tel" l1S 0(

IN5TAHTANEOUS OFF-STATE VOLTAGE ("OX). 600 VRATE-OF-RISE OF OFF-STATE VOLTAGE (d"/dt). 200 VIt,.PEAK REVERSE VOLTAGE (VAXM>· 200 VHALF.SINUSOIDAL CURRENT WAVE FORMCASE TEMPERATURE (TC>. 1150(

REAPPLIED OFF-STATE VOLTAGE (VOX>. 600 VRECTANGULAR CURRENT PULSERATE-OF-DESCENT OF ON-STATE CURRENT(-di/dt)· 10 Alus •CASE TEMPERATURE (T >. 120 ore,

'OOOC";i"oc

•..,••g)

2

r;lIC'j'jEjTEj"jPiERj'iTiURiEi(iTcjlj"j'i"'IOCiiiiimilllIIRECTANGULAR PULSE (FORWARD CURRENT) WIDTH. SO•• ,.. ",

S ~~•... ~~~.~~ :+-,\~~~"i'~$~:ij:ijta 10 c...~~f{f ,~~ ,,"-ffi t;t:~'\~

~ ••f(,~'4:-

I'II~III

2N3650, 2N3651,2N3652,2N3653,S7430M _~ 1/' 28THR'Ao

oF68~ ~~~~..~~~~~~~:.EO~ •• AROWIilA(I'R'C(S

G(~~:~~~7K

OF3HINSULATING BUSHING

0---- ~H~CK~'~~~no~g6~;~'7,t,~t~m)MAX

~;i:INSULATOR -fO\ ~::~~:~~:;,:~~LIS"E().o.VAlllleu.o.1PU8L1SH£O ~~NR68A•• ,o,RDWAR( PRtCES -" CONNECTOR

• "'V"'L"IIU "'PU8~IS"EDo ...ROW"REPA'CES

~~~O~~SHER ©}NA388" ~HEXNUT "l::J)


Directly mounted on heat sink (Heat-Sink Compound: Dow Corning 340 0.90C/Wsilicone heat-sink compound, orequivalent.)

Mounted on heat sink with a 0.004 to2N3650- 53 0.006-in. (0.10 to O.l5-mm) thick40735 mica insulating washer (between unit

and heat sink).

Without heat-sink compound 2.80C/W

With heat-sink compound 1.80C/W

Heat-Sink Compound: Dow Corn ing340 silicone heat-sink compound, Of

equivalent.)

-Normal value. Actual value will vary slightly depending on use of heat sinkcompound, mounting surface, insulator thickness, mounting torque, and etc.

NOTE 1: Dimensions in parentheses are in millimeters and are de-rived from the basic inch dimensions as indicated.

NOTE 2: The recommended torque is 26 to 36 in. -lb. applied to a\4-28 UNF-2B hex nut assembled on thread. The applied torqueduring installation should not exceed 50 in. -lb.

DIMENSIONAL OUTLINE

JEDEC TO-48

I I I TEMPERATUREII. II .' -- MEASUREMENT

.0; ,\ LJ _f.-__ A-=(:I:

NGPLANE

TERMINAL NO.2 92CS-15208R2



A 0.330 0.505 8.' 12.8 -00, - 0.5« - 13.81 -, 0.5« 0.562 13.82 14.28 -

F 0.113 0.200 2.87 5.08 2J 0.'" 1.100 24.13 27.94 -M 0.215 0.225 5.46 5.71N 0.422 0.453 10.72 11.50 -

or 0.058 0.'" 1.47 1.73 1.T, 0.138 0.148 3.51 3.75 ,.w 1/4·28 UNF·2A 1/4·28 UNF·2A 2

NOTES:1. Contour and angular orientation of th&se t8l'"minall is optional.2. A chamfer or undercut on one or both ends of hexagonal portion

is optional.3. 4lWis pitch diameter of coated threads.

REF: Screw·Thread Standards for Federal Services, Handbook H28.P.rt I Recommended Torque: 25 inch·pounds.

TERMINAL CONNECTIONSTerminal 1 (Small Lug) - GateTerminal 2 (Large Lug) - CathodeTerminal 3 (Stud) - Anode

ffilCffiLJDSolid StateDivision

2N36542N36562N3658

2N36552N3657S7432M

• Fast turn-off time - 10 J.lS max.

• High di/dt and dv/dt capabilities

• Shorted-emitter gate-cathode construction... contains an internally diffused resistorbetween gate and cathode


'IAnode

• Center gate construction ... providesrapid uniform gate-current spreading forfaster turn-on with substantially reducedheating effects

These RCA types are all-diffused, silicon controlled rectifiersdesigned for high-frequency power-switching applications suchas inverters, switching regulators, and high-current pulse


'NON-REPETITIVE PEAK REVERSE VOLTAGE:'Gate Open

NON-REPETITIVE PEAK OFF-STATE VOLTAGE:'Gate Open .

'REPETITIVE PEAK REVERSE VOLTAGE:'Gate Open _

'REPETITIVE PEAK OFF-STATE VOLTAGE:'Gate Open .

ON-STAT~ CURRENT: °T C = 40 C, conduction angle = 180R~_ _ .

• Average .'PEAK SURGE (NON· REPETITIVE) ON-STATE CURRENT:

For one full cycle of applied principal voltage60 Hz (sinusoidal)

'RATE OF CHANGE OF ON-STATE CURRENT:Vo = VOROM.IGT = 200 mA. t, = 0.1!,' ISee Fig. 151

FUSING CURRENoT lfo, SCR protection):TJ = -65 to 120 C. t = 1 to 8.3 m,

'GATE POWER DISSIPATION:'Peak Forward (for 10 IJs max., See Fig. 7)Average (averaging time = 10 ms max.l

'TEMPERATURE RANGE:·Storage " .Operating (Case) .

TERMINAL TEMPERATURE lOuring soldering):For 10 s max. (terminals and casel

STUD TORQUE:RecommendedMaximum (00 NOT EXCEEO)

applications. These types may be used at frequencies up to25 kHz.

VRSOM 75 150 300 400 500 700 V

VOSOM 75 150 300 400 500 700 V

VRROM 50 100 200 300 400 600 V

VOROM 50 100 200 300 400 600 V

ITIRMS) 35 A

IT(AV) 25 AITSM

180 A

di/dt 400 A/!,s

12t 165 A2s

'PGM 40 W

PG(AVI 1 W

Tstg -65 to 150 °cTC -65 to 120 °cTT

°c2251"S

35 in-Ib50 in-lb

• In accordance with JEDEC registration data format (JS-14, RDF-1) filed for the JEDEC (2N series) types.

• These values do not apply if there is a positive gate signal. Gate must be open or negatively biased.

• Any product of gate current and gate voltage which results in a gate power less than the maximum is permitted .

.• For temperature measurement reference point, see Dimensional Outline.

LIMITS

SYMBOLFOR ALL TYPES

UNITSCHARACTERISTIC Except as SpecifiedMIN. TYP. MAX.

Peak Off·State Current:(Gate open, T C = 120°CI IDOMForward Current IIDOM) at VD = VDROM or

Reverse Current (I ROM I at V R = V R ROM IROM mA2N3654,2N3655,2N3656,s7432M ..... - - 62N3657 ....................... - - 5.5

2N3658 . . . . . . . . . . . . . . . . . . - - 4

Instantaneous On-State Voltage:iT = 25 A (peak), T C = 25°C ..... vT - - 2.05 V

Instantaneous Holding Current:Gate open, T C = 25°C ..

iHO- 75 150

mAT C = _65°C .... .... .. ... . ...... ............. - 150 350*

Critical Rate of Rise of Off· State Voltage:V D = V DROM, exponential voltage rise, dv/dt 200 - - V/!1sGate open, TC = 120°C Isee Fig. 16) .....

DC Gate Trigger Current:VD= 6 V (de), RL =4n. TC= 25°C ..... .. .... .....

IGT- 80 180

mAVD= 6V (de), RL = 2n. TC= _65°C ....... ... .. - 150 500*

DC Gate Trigger Voltage:VD = 6 V (de), RL = 4 n, TG = 25°C . . . . . . . . . . . - 1.5 3 VVD= VDROM' RL = 200n, TC= 120°C ... .. ..... VGT 0.25* - -VD=6 V Idel, RL = 2n, TC= _65°C ... - 2 4.5*

Circuit Commutated Turn-Off Time:(Rectangular Pulse)

VDX = VDROM' iT = 10 A, pulse duration = 50 !1S,dv/dt = 200 V/iJ.s, - di/dt = -5 A/iJ.s, IGT = 200 mA,VRX = 15 V min., VGK = 0 V lat turn·off), TC = 120°C tq - - 10 iJ.sIsee Figs. 19 & 20).

Circuit Commutated Turn-Off Time:(Sinusoidal Pulse)

VDX = VDROM' iT = 100 A, pulse duration = 1.5 !,S, dv/dt =200 V/iJ.s, VRX = 30 V min., VGK = 0 V lat turn-off) tq - 10 iJ.STC = 115°C Isee Figs. 17 & 18)

Thermal Resistance Junction-to-Case:Steady-State. Re-JC - - 1.7 °C/W

CURRENT WAVEFORM

ITM_I\_"0-' L..J ,-I.d- IL"...j

'., 'I"r--- b,_I II I

VRSOll~ ""-VRROll

LiDO : IVOSOM

IVOROM

SO 100 150 200

PEAK ON-STATE CURRENT (llM) -... 92SS.4318~1

Fig. 2 - Power dissipation vs. peak on-state current.

CURRENT WAvEFOR .•••.

ITM _-fLJ'\...1" I-

-'2--1

'1 '2., 0.05

~J

o.'s.~<

ms·ml

Fig. 3 - Maximum allowable case-temperature vs. peakon-state current.

CURRENT W"'VEFORM

'T:TLJ~.;---l

35 •.•. (RittS)LIMIT

fft

CURRENT WAVEFORM

'T:TLJ~;---l

35· .•. (RM5)

1I1tl1T

m 100 1~

PEAK ON-STATE CURRENT (IT/II)-'''

Off·STATE VOLTAGE (VOX)" 600 VRATE·Of-RISE Of OFF-STATE VOLTAGE

(dy/dl)" 200 v,~ sPEAK REVERSE VOLTAGE (VRXM)" 200 VHALf· SINUSOIDAL CURRENT WAVE fORMCASE TEMPERATURE (TC) " 115 oC

92S5·4348

Fig. 13 - Typical variation of turn-off time with peak on-statecurrent (half-sine-wave pulse).

r-l;O;F~F'~\T!A~TE!!VOlL1TA1G;E~(V1D!)j--;so;V;~;:llllllllREAPPLIED Off· STATE VOLTAGE (Vox)" 600 VRATE.Of.RISE Of REAPPLIED OFf-STATE

15 VOLTAGE (d. dt)= 200V/~sCURRENT PULSE·WIDTH (RECTANGULAR)" 50 ~ sRATE.Of·DESCENT Of ON· STATE-CURRENT

(·di (II)" 10 A ~ s ,,, SO to.

~ CIJRRE'" ~\'~;'.~;i]"~ff=ff=~~Eto.~O"'-')'to.' S

ON·STATE CURRENT (IT)" 20 A (RECTANGULAR PULSE)CASE TEMPERATURE (TC)" 1200C

I "" :::' :-:-:::- .:C': i':'~

ii-::o lOO 200 JOO

RATE.Of.RISE Of REAPPLIED OFF·STATE VOLTAGE (d. dt)-V ~s9255-4347

Fig. 14 - Typical variation of turn-off time with rate-of-riseof reapplied off-state voltage (rectangular pulse),

Fig. 17 - Relationship between off-state voltage, reverse voltage,on·state current, and reverse current showing referencepoints for specification of turn-off time (tq), half-sine-wave pulse.

VDX-- ------ :----i-o

~VRX vRXM

I IIIIII- -----0

III

'n -------'9' ------1I

'q ----I

Fig. 19 - Relationship between off-state voltage, reverse VOltage,on-state current, and reverse current showing referencepoints defining turn-off time (tq), rectangular pulse.

CRITICAL dv/d' ~

/

.2Y.=O.632dl I

t= RC

SII

~~~jllSUPPLY

VOLTAGE

II~

THERMAL

TYPE MOUNTING ARRANGEMENTRESISTANCE*(Case-to-HeatSink)

Directly mounted on heat sink (Heat-Sink Campaunt: Dow Corning 340 0.9°C/Wsilicone heat-sink compound, orequivalent.)

2N3654- Mounted on heat sink with a 0.004 to2N3658 0.006-in. 10.10 to 0.15-mml thickS7432M mica insulating washer (between unit

and heat sink).Without heat-sink compound 2.8°C/W

With heat-sink compound 1.8°C/W

Heat-Sink Campaunt: Dow Corning340 silicone heat-sink compound, orequivalent.)

*Normal value. Actual will vary slightly depending on use of heat sinkcompound. mounting surface, insulator thickness, mounting torque,and etc.

NOTE 2: The recommended torque is 35 in.-Ib. applied to a Ya-28UNF-2B hex: nut assembled on thread. The applied torque

during installation should not exceed 50 in.·lb.

~ "•• ,"m"~OF~

MICA INSULATOR~AVAILA8LEATPV8LISHEO

~ HAROWAREPR'CES

CD "'AT"NK(CHASSIS)

eDF3HINSULATING BUSHING

0---- ~~c~~'~~i~nO~g6~i~7:.~t~~)MAX.

-@) AVA'LABLE/l,TPU8L'SHEO

~i~:INSULATOR 0 :/l,::~REI'RICES

/l,VA'LA8LEATPU8LlSHEO ifT CONNECTORH/l,ROWAREPR,CES - AV/l,'L/l,BLEATPUBLISHEOo H/l,ROWAREPR,CES

NRll0A ~}LOCK WASHER ~

NA38B ~HEXNUT ~




NOTESMIN. MAX.

,_~~'- -A 0.330 0.505 8.4 12.8 -.0, - 0.544 - 13.81 -, 0.544 0.562 13.82 14.28 -F 0.113 0.200 2.87 5.08 -J 0.950 1.100 24.13 27.94 -M 0.215 I 02~

5.46 5.71 -N 0.422 0.453 10.72 11.50 -.T 0.058 0.068 1.47 1.73 -.T, 0.138 0.148 3.51 3.75 -.w 1/4·28 UNF·2A 1/4·28 UNF·2A 1

NOTES:1. 4JW.is,pitch diameter of coated threads.

REF: Screw·Thread Standards for Federal Services, Handbook H28,

Part I Recommended Torque: 35 inch·pounds.

No.1 - GateNo.2 - Cathode

Case. No.3 - Anode

Rectifiers

RCA-IN440B, IN441B, IN442B, IN443B,lN444B,and IN445B are heTlretically sealed silicon rectifiers ofthe diffused-junction type, designed for use in powersupplies of magnetic amplifiers, radio receivers, dc':Jlocking circuits, power supplies, and other militarymd industrial applications.

These devices have dc forward-current ratingsto 0.75 ampere at an ambient temperature of 250C,and peak reverse voltage ratings of 100, 200, 300, 400,500 and 600 volts, respectively.

The IN440B through IN445B feature (1) sturdyand compact mount structure, (2) axial leads for flexi-bility of circuit connections, (3) welded hermetic seals-every unit is pressure-tested to assure protectionagainst moisture and contamination, (4) superior junc-tion formation made possible by a diffusion processwith very precise controls .. In addition, these devicesare designed to meet the following stringent environ-mental, mechanical and life requirements of primeimportance in military applications: (a) special temper-ature-cycling tests to assure stable performance overthe entire operating temperature range, (b) specialcoating to provide protection against the effects of se-vere environmental conditions,

DIFFUSED· JUNCTIONSILICON RECTIFIERS

For Power-Supply ApplicationsIn Industrial and MilitaryElectronic Equipment

• stringent environmental and mechanical tests toinsure dependable performance in industrial andmilitary applications

• hermetically s'laled JEDEC 00-1 package

• wide operating.temperature range:

lN440BllN441B lN444B}1N442B -65 to +1650C lN445B -65 to +1500

C

lN443B

RECTIFIER SERVICE

Absolute-Maximum Ratings, for a Supply Frequency of 60 Hz:

PEAK REVERSE VOLTAGE .RMS SUPPLY VOLTAGE

For resistive or inductive loads .....DC REVERSE (BLOCKING) VOLTAGE.FORWARD CURRENT:a

DC:at TA = 50°C.at TA = 100°C .at TA = 150°C

Peak, Repetitive . _ .Surge, One-Cycle

TEMPERATURE RANGE (Ambient):Operating.Storage.

IN440B IN441B IN442B IN443B IN444B IN445B UNITS100 200 300 400 500 600 V

70 140 210 280 350 420 V100 200 300 400 500 600 V

750 750 750 750 650 650 mA500 500 500 500 425 400 mA250 250 250 250 0 0 mA3.5 3.5 3.5 3.5 3.5 3.5 A15 15 15 15 15 15 A

165 165 165 165 150 150 °c-65 to +175 °c

CHARACTERISTICS lNMOB lN441B lN442B lN443B lN444B lN445B UNITS

Maximum Forward Voltage Drop (DC)at full load current. ... ..... . 1.5 1.5 1.5 1.5 1.5 1.5 V

Maximum Reverse Current (DC)at maximum peak reverse voltage 0.3 0.75 I 1.5 1.75 2 }J1\

Maximum Reverse Current(averaged over I complete cycleof supply voltage):

at maximum rated PRV, T A = 1500C 100 100 200 200 200 200 }J1\

r~ 750<l

-'~ 62!I

>-zw500lra0375lr1ilre 250g

~ 125

"x~

'" "w<r

~<Clr

~ 10

&''"~8z~z~'2

Fig.2 - Typical Forwara Voltage ana Current Charac-teristic for RCA-1N440B through lN445B.

The maximum ratings in the tabulated data areestablished in accordance with the followingdefinition of the Absolute-Maximum Rating Systemfor rating electron devices.

Absolute-Maximum ratings are limiting valuesof operating and environmental conditions applic-able to any electron device of a specified typeas defined by its published data. and should notbe exceeded under the worst probable conditions.

The device manufacturer chooses these valuesto provide acceptable serviceability of the device,taking no responsibility for equipment variations,environment variations, and the effects of changesin operating conditions due to'vdriations indevice characteristics.

The equipment manufacturer should design sothat initially and throughout life no absolute-maximum value for the intended service is exceededwith any device under the worst probable operatingconditions with respect to supply-voltage varia-tion, equipment component variation, equipmentcontrol adjustment, load variation, signal varia-tion, environmental conditions, and variationsin device characteristics.

The flexible leads of these rectifiers areusually soldered to the circuit elements. It isdesirable in all soldering operations to provideSome slack or an expansion elbow in the leads toprevent excessive tension on the leads. It isimportant during the soldering operation to avoidexcessive heat in order to prevent possible damageto the rectifiers. To absorb some of the heat,grip the flexible lead of the rectifier betweenthe case and the soldering point with a paIrof pliers.

When dip soldering is employed in the assemblyof printed circuitry using these rectifiers, thetemperature of the solder should not exceed2~5° C for a maximum immersion period of 10 sec-onds. Furthermore, the leads should not be dipsoldered beyond points A and B indicated on theDimensional Outline Drawing.

Because the metal cases of these recti-fiers may operate at voltages which are danger-ous, care should be taken in the design ofequipmen~ to prevent the operator from comingin contact with the rectifier. It is recom-mended that these rectifiers be mounted on theunderside of the chassis.

100 AMBIENT TEMPERATURE (OC) = ISO·-DO NOT EXCEED MAXIMUM· PEAK REVERSE VOLTAGERATING.

4

I~ ,~ 2 -:> _1- ~ ~ -'" C-Oa: ---u 10j ·W ·'"5~ 4

a: 3

2

I

Fig.3 - Typical Dynamic Reverse Characteristicfor RCA- IN440B through IN445B.

MAX. MIN. MAX.. 0.027 0.035 0.69 0."., 0.125 3.180 0.360 0.400 9.14 10.160, 0.245 0.280 6.22 7.11.0, - 0.200 5.08

F 0.075 1.91G, 0.725 18.42 ANODEK 0.220 0.260 5.59 6.60L 1.000 1.625 25.40 41.28a 0.025 0.64H 0.5 12.7

1. D,menston to allow lor plOch or ~al deformat.onanywhere along tubolauon (optIOnal!.

2 Diameter to be controlled from free end of lead to

within 0.188 oneh 14.78 mm) from the pomt of

attachment to the body. Within the 0.188 Inch{4.78 mm} dlrTlenslon.the diameter may vary toallow for lead finishes and irregularities.

TERMIHAL DIAGRAMfor Types

lH440B, lH441B, lH442B, lH443B, lH444B, lH445B

DDJ]3LJDSolid StateDivision 1N536 1N538 1N540

1N5371N5391N5471N1095

Flanged-Case, Axial-Lead TypesFor Power-Supply Applications

Features:• Wide operating-temperature range: -65 to +6SOC.• Stringent environmental and mechanical tests to insure

dependable performance in industrial and militaryapplications.

• Peak reverse voltages from SOto 600 V.• Max. dc forward current = 2S0 mA at TA = 1S00C.• Hermetically sealed JEDEC 00-1 package.

These silicon rectifiers have peak reverse voltage ratings fromSO to 600 volts, and a maximum reverse current of S

microamperes at rated peak reverse voltage and ambienttemperature of 2SoC.

These silicon rectifiers are designed to meet such stringentenvironmental, mechanical, and life requirements of primeimportance in military applications as: (1) sturdy andcompact mount structure, (2) axial leads for flexibility ofcircuit connections, (3) welded hermetic seals, and (4) specialtemperature cycling tests to assure stable performance overthe entire operating temperature range.

RCA-1NS36, lNS37, lNS38, lNS39, lN540, lN547, andlNl095 are hermetically sealed silicon rectifiers of thediffused-junction type_ They are specifically designed foruse in power supplies of industrial and military equipmentcapable of operating at dc forward currents up to 7S0milliamperes and temperatures ranging from -6So to +16SoC.

RECTI FIER SERVICE, ABSOLUTE-MAXIMUM RATINGS, for a Supply Frequency of 60 Hz:

lN536 lN537 lN538 lN539 lN540 lNl095 lN547

PEAK REVERSE VOLTAGE. .....••.. 50 100 200 300 400 500 600 V

RMS SUPPLY VOLTAGEFor resistive orinductive loads ...............•.. 35 70 140 210 280 350 420 V

OC REVERSE - (BLOCKING)VOLTAGE ...............•....• 50 100 200 300 400 500 400 V

FORWARO CURRENT':DC. for resistive or inductive loads:

T A = 500C ............•......•. 750 750 750 750 750 750 750 mA

SURGE. one cVcle . . . . . . . . . . . . . . . . . 15 15 15 15 15 15 15 A

OPERATING FREQUENCy .....•..•. 100 100 100 100 100 100 100 kHz

TEMPERATURE RANGE (Ambient!:Operating ...................... -65 to +165 °cStorage ........................ -65 to +175 °c

-For maximum de forward current values at ambient temperatures other than those specified, see Rating Chart, Fig. 1.

1N536 1N537 1N538 1N539 1N540 1N547 1N1095

Maximum Forward Voltage Drop(DC) at a load current of500 mA ......................... 1.1 1.1 1.1 1.1 1.1 1.2 1.2 V

Maximum Reverse Current (DC)at maximum peak reverse voltage . ....... . 5 5 5 5 5 5 5 IlA

Maximum Reverse Current(Averaged over 1 completecycle of supply voltage):

at maximum rated PRV,T A = 150oC ......... . . . . . . . . . . . . 0.4 0.4 0.3 0.3 0.3 0.35 0.3 mA

.•. DO NOT EXCEED PEAK REVERSE, VOLTAGE RATING.

UNCTION TEMPERATURE ("C)I'~OI100·'" ·w~

w ,..~ I I I I I I I~15 ··"i ·w

'" , 2~~w I I I~ I··· I

I I I I I I I


MIN. MAX. MIN. MAX.

ob 0.027 0.035 0.69 0.89 2bl 0.125 3.18 1,,0 0.360 0.400 9.14 10.16,,01 0.245 0.280 6.22 7.11002 0.200 5.08F 0.075 1.91Gl 0.725 18.42

K 0.220 0.260 5.59 6.601 1.000 1.625 25.40 41.28Q 0.025 0.64H 0.5 12.7

1. Dimension to allow for pinch or seal deformation

anywhere along tuhulation (optional).

2. Diameter to be controlled from free end of lead to

within 0.188 inch (4.78 mm) from the point of

attachment to the body. Within the 0.188 inch

(4.78 mm) dimension, the diameter may vary to

allow for lead finishes and irregularities.

DDJ]3LJDSolid StateDivision

---------------------------------- File No. 89

Rectifiers1N1763A1N1764A

RCA-1N1763A and lN1764A are hermeticallysealed silicon rectifiers of the diffused-junc-tion type, designed for use in power supplies ofcolor and black-and-white television receivers,radio recei vers, phonographs, high-fidelityamplifier systems, and other electronic equipmentfor commercial and industrial applications.

RCA-1N1763A and lN1764A supersede and areunilaterally interchangeable with RCA-1N1763 andlN1764, respectively. The new rectifiers In-corporate all of the superior performance andreliability features which have gained industryacceptance for thei r RCA prototypes, and, inaddition, offer substantially higher dc-output-current capabilities, lower reverse (leakage)currents, lower forward voltage drop, and a wideroperating-temperature range.

Both devices have dc forward-current ratingsof 1 ampere - resistive or inductive load, and0.75 ampere - capacitive 'load at free-air tem-peratures up to 750C (natural convection cooling).They can provide dc output currents of up to 2amperes to capaci tive loads when attached to simpleheat sinks.

RCA-1N1763A has a peak-reverse-voltage ratingof 400 volts, and is intended for applications inwhich the rectifier operates directly from an acpower line supplying up to 140 volts rms forcapacitive loads, or up to 280 volts rms forresistive or inductive loads.

RCA-1N1764A has a peak-reverse-voltage ratingof 500 volts, and is intended for applications inwhich the rectifier operates from an ac linethrough a step-up transformer supplying up to 175volts rms for capacitive loads, orup to 350 voltsrms for resistive or inductive loads.

RCA-1N1763A and lN1764A have an operating-temperature range of -65°C to +1350C. They utilizethe JEDEC 00-1 flanged-case, axial-lead packagewhich provides flexibility of installation inboth hand-wired and printed-circuit equipmentdesigns. These new rectifiers, like their RCAprototypes, are conservatively rated and incor-porate the following design features: (1) welded,hermetically sealed case for protection againstmoisture and contamination, (2) superior junctioncharacteristics made possible by a precisely con-trolled diffusion process; (3) extensive andrigorous quality-control procedures.

DIFFUSED-JUNCTIONSILICON RECTIFIERSFlanged-Case Axial-Lead Types

For Power-Supply ApplicationsIn Commercial and IndustrialElectronic Equipment

• higha)

dc-output-current capabil ity:with natural convectionI ampere - res ist ive or

inductive load3/'4 ampere - capac it ive

loadb) with simple heat sinks:

2 amperes - 1 tocapacitive load f

up to 2 amperes - 1capacitive load f

1050eTc

to 750eTFA

• low dc reverse (leakage) currents:5 ~a max. at 250e; 100 ~a max. at 750e

• low forward voltage drop:1.2 volts max. at a dc forward currentof I ampere

• wide operating-temperature range:-650e to +1350e

• unilaterally interchangeable with TypesIHI763 and IH176'4

PEAK REVERSE VOLTAGE.RMS SUPPLY VOLTAGE:

For operation with resistive orinductive loads •.....

For operation with capacitive loads

FORWARD CURRENT:For operation with resistive or

inductive loads:

AVERAGE (DC). .PEAK RECURRENT.

TEMPERATURE RANGE (FREE-AIR):OperatingStorage .

TypeIHI763A

400

TypeIHI76~A

500

max. volts

max. volts

At free-AirTemperatu.res

Up to Above75°C 75°C

At free-A irTemperatures

Up to Above75°C 75°C

See fig.1 See fig.1 max. amp

0.75

10.75

lmax. ampmax. ampSee fig.1 See fig.1

35 35 max. amp

-65 to +135 -65 to +135 °c-65 to +150 -65 to +150 °c

Fig.2 - Repetitive Surge Current Rating Chart forRCA-1N1763A and 1N1764A

1N1763A.1N1764A File No. 89Maximum DC Reverse Current;

At a Peak Reverse Voltage of 400 volts I-'aAt a Peak Reverse Voltage of 500 volts I-'a

C h a ract e r is tic s, at a Ji'ree-A ir !Femperature of 7jOe:

Maximum DC Reverse Current:

At a Peak Reverse Voltage of 400 volts O. I maAt a Peak Reverse Voltage of 500 volts 0.1 ma

Typical Performance Characteristics, at a Free-Air Temperature of 2jOe:

Type TypeINI763A INI764A

Half-Wave Rectifier Service:RMS Su pp Iy Voltage. 117 117 117 150 ISO ISO volts

Fi Iter-Input Capacitor (C) . 100 200 350 100 200 350 I-'fSurge-Limiting Resistance#.. 5.6 5.6 5.6 6.8 6.8 6.8 ohmsDC Ou tpu t Voltage at In put

to Filter (Approx.):At half-load current of 375 ma. 140 145 150 180 185 190 volts

At full-load current of 750 ma. 125 130 140 155 160 170 volts

Voltage Regulation (Approx.) :Half-load current to full-load current. 15 15 10 25 25 20 volts

Half-Wave Voltage-Doubler Service:R~IS Supply Voltage. 117 117 117 ISO ISO 150 voltsFi Iter-Input Capacitor (C). 100 200 3SO 100 200 350 I-'FSurge-Limiting Resistance # 5.6 5.6 5.6 6.8 6.8 6.8 ohmsDC Output Voltage at In pu t

to Filter (Approx.) :At half -load current of 375 ma. 255 265 275 325 340 350 voltsAt fu II-load current of 750 ma. 225 240 255 285 305 325 volts

Voltage Regulation (Approx.):Half-load current to full-load current. 30 25 20 40 35 25 volts

Full-Wave Voltage-Doubler Service:mls Supply Voltage. 117 117 117 150 ISO ISO volts

Filter In pu t Capacitor (C). 100 200 350 100 200 350 I-'FSurge-Limiting Resistancefl.. 5.6 5.6 5.6 6.8 6.8 6.8 ohms

DC Output Voltage at In pu tto Filter (Approx.):At half-load current of 375 ma. 275 280 290 350 355 365 voltsAt full-load current of 750 ma. 250 260 275 320 330 345 volts

Voltage Regulation (Approx.):Half-load current to full-load current. 25 20 15 30 25 20 volts

#The transformer series resistance or other resistance in the rectifier supply circuit may be deducted from thevalue shown.

·1'Ji;l\ln ~~~ I_I\IR 1<."" -

~ ¢:;~INI7641\

~0a: 3010 ~'" ,

W , (TFA)=25°C e~2~Wa:

~~20W .~~176t INI764A ~~a: 15

2I I ~~

<I

I;;5

7-I !

Fig.3 - Typical Dynamic Reverse Current Character-istics forRCA-1N1763A and 1N1764A.

0.5 I 1.5 2 2.5INSTANTANE.OUS fORWARD VOLTS ("'F)

92CS-9730R3

Fig.4 - Typical Forward Voltage and Current Char-acteristics for RCA-1N1763A and 1N1764A.

oa:

~a:W00"-">- •..•

12.5Zl:!>a:>-

"o u"Wo.~q

7.5 ~U)o.w",5,,0.

5 "''''><"

"'"2.5

o-75 -so -25 0 25 50 75 100 125 ISO


Fig.5 -Forward-Current Capabilities ofRCA-1N1763Aand 1N1764A for Operation with Heat Sink at

Case Temperatures from -65°C to +1350C.

o~5 -~ -25 0 25 ~ ~ 100 125 150

FREE-AIR TEMPERATURE (TFA)-OC

a) 3" x 3" Heat Sink. b) 2-1/2" x 2-1/2" Heat Sink.Figs.6a and 6b -Forward-Current Capabilities of RCA-1N1763A and 1N1764A for Operation with Heat Sinks.

o

'"~'"o......~!:1.5"","'",~~ I:.,.::>"'")( 0.5

"'" o-75 -50 -25 0 25 50 75 tOO 125 ISO

FREE-AIR TEMPERATURE (TFA}-OC

o-75 -50 -25 0 25 50 75 100 125 150


e) 1" x 1" Heat Sink.Figs .6c, 6d, and 6e - Forward-Current Capabi 1 i ties of RCA-1N1763A and 1N1764A for Operat ion wi thHeat Sinks.

HEAT SINK SILICONE GREASESILICONE GREASE

• Registered Trade Mark, Tinnennan Products, Inc., Cleveland I, Ohio.

Fif!o 7 - SUf!f!ested Methods for Attachinf! RCA-IN1763AIN1764A to Heat Sink

TINNERMANSPEED CLlP'*

OREQUII/ALENT

TYPES.b INJ7bJA +

IN~C

117 ~gLTS C -r- S~LTfUT~AGE

==::: _...,-'_: ..~:... ~i::'t;:::::.- _

~: ..±:::i'=r.::~ ...~--

.. -_. :::-:-~~ ~- ." .-,..-S' _.... __;:=F~i;:E~=E:-.::~~

Fig.8 - Typical Operation Characteristics forRG4-1N1763A in Half-Wave Rectifier Service.

IFREE-AIR TEMPERATURE (TFA)=25° CISUPPLY FREQUENCY (CPS)=60 ~:._ --

-. _._::J~'

1iiE';'.::E:':-:F.::'?:;:,::n;::::;:-::, -: .. =:-~ _._.

fEE'E:iiF-=--'-f:3'-=-~ _ .. ,,0: --: ... _ .. __-::: ...~ .::-' :~.. ::: ~=- :;--~ :.1.1...::- 0 _ .•

N - .•.••~:: - ~; :::g :,- ==:::::: ..u_.

-- .-: ._:~ -:::: -:::. w

~,;:: .- - '-._~" _.... - _.: :::: :::: :::,:'§~r.:-:':;:::F:: ~=~~=.. ... __...."§[:.:... .__:=.._.. " .. ::0:" .._---.:=,. -::-: .,-- :::-:.. '"§= ._ :__~.._.:..._.I : " -= :: N~

~..;; :: .::::--- ··f ' --- ....- ~~ " :::::::.....'J .__.. --~g~~: . -:::~-:-~gEJ.:?: ._.... :: ::::::-.:: .. ::: _. :::.~::.= ::.: 0

~t~§j:'

~ .....~"":~:IEEF~ ....... ...f;EE- :r:::_ ~: f',J .. .... . ::".. :if. ::~::

Fig.9 - Typical Operat ion Characteristics for RG4-1N1764A in Half-Wave Rectifier Service.

2 ~DC OUTPUT VOLTS

Fig.l0 - Typical Operation Characteristics ofRCA-lN1763A in Half-Wave Voltage-Doubler Service.

~ ~ ~DC OU T PUT VOLTS

Fig.ll - Typical Operation Characteristics ofRCA-lN1764A in Full-Wave Voltage-Doubler Service.


MIN. MAX. MIN. MAX.

,b 0.027 0.035 0.69 0.89 2b, - 0.125 - 3.18 ,,0 0.360 0.400 9.14 10.16,0, 0.245 0.280 6.22 7.11,02 - 0.200 - 5.08F - 0.075 - 1.91G, - 0.725 - 18.42K 0.220 0.260 5.59 6.60L 1.000 1.625 25.40 41.28a - 0.025 - 0.64H 05 12.7

1. Dimension to allow for pinch or seal deformationanywhere along tubulation (optional).

2 Diameter to be controlled from free end of lead towithin 0.188 inch (4.78 mm) from the point ofattachment to the body. Within the 0.188 inch(4.78 mm) dimemion. the diameter may vary toallow for lead finishes and irregularities.

[Kl(]5LJ[JSolid StateDivision

Rectifiers1N2859A 1N2862A1N2860A 1N2863A1N2861A 1N2864A

RCA-1N28S8A, lN2859A, lN2860A, lN2861A,lN2862A, lN2863A, and lN2864A are hermeticallysealed silicon rectifiers of the diffused-junctiontype, designed for use in a variety of applica-tions in industrial and commercial electronicequipment.

RCA-1N2858A through lN2864A supersede and areunilaterally interchangeable with RCA-1N2858through lN2864, respectively. The new rectifiersincorporate all of the superior performance andreliability features which have gained industryacceptance for their RCA prototypes, and, in ad-dition, offer substantially higher dc output-cur-rent capabilities, lower reverse (leakage)currents, and a wider operating-temperature range.

All seven of these new rectifier types havemaximum dc-forward-current ratings of 1 amperefor resistive or inductive 10ads and 0.75 amperefor capacitive loads at free-air temperatures upto 750C (natural convection cooling). They arealso capable of providing dc output currents ofup to 2 amperes with capacitive loads when attach-ed to simple heat sinks.

RCA-1N2858A through lN2864A differ only inpeak-reverse-voltage ratings (see Maximum Ratingschart). They are rated for operation at free-airtemperatures from _650 to +135°C, and utilizethe JEDEC 00-1 flange-type, axial-lead rectifierpackage which provides flexibi lity of installationin both hand-wired and printed-circuit equipmentdesigns.

These new rectifiers, like their RCA proto-types, are conservatively rated, and incorporatethe following design features and special testswhich contribute to their outstanding performanceand reliability: (1) junctions of extremely highuniformity produced by a special, precisely con-trolled diffusion process, (2) rugged internalmount structure, (3) hermetically sealed cases,(4) prolonged treatment at high temperatures tostabilize characteristics, (5) pressure tests ofseals for protection against moisture and con-tamination, (6) tests for forward and reversecharacteristics at 250C, and (7) high-temperaturedynamic tests under full-load conditions.

DIFFUSED-JUNCTIONSILICON RECTIFIERSFlanged-CaseAxial-Lead Types ForGeneral-Purpose ApplicationsIn Industrial And CommercialElectronic Equipment

Features:• high dc-output-current capabil ity:

1 ampere - res ist ive or } to 7Soeinductive load with natural3N ampere - capac i t ive convect ion

load cooling

[to losoeup ~0.2 amperes -capa- with simple

cltlve load heat sinks• low dynamic reverse current:

0.1 ma max. at sooe0.3 ma max. at 7Soe

• low dc forward voltage drop:1.2 volts max. at 2Soe with I amperedc forward current

• wide operating-temperature range:-6So to +13Soe• hermetically sealed JEOEe 00-1 package• unilaterally interchangeable with Types

IN28S8 through IN286~

• specially processed and tested for highreI iabi I ity and stabi I ity of character-istics

1N2858A-1 N2864A File No. 91

RECTIFIER SERVICEAbsol ute-Maximum Rati ngs, for a SuppLy Frequency of 60 cps:

IN2858A I N2859A IN2860A I N2861 A IN2862A IN2863A I N286'1A

PEAK REVERSE VOLTAGE. 50 100 200 300 400 500 600 max. volts

R'>lSSUPPLY VOLTAGE:For resistive or inductive loads. 35 70 140 210 280 350 420 max. vol ts

For capacitive loads. 17 35 70 105 140 175 210 max. volts

OC REVERSE (BLOCKING) VOLTAGE 50 100 200 300 400 500 600 max. volts

FORWARDQJRRENT:For resistive or inductive loads:rt TFA up to 75°C. 1 max. amp

AVERAGE(OC) At TFA above 75°C. •• See fig.1

For capaci ti ve loads: I 0.75 I{At TFA up to 75°C. 0.75 0.75 0.75 0.75 0.75 0.75 max. ampAVERAGE(OC) At TFA above 75°C. • See Fip.1 ~

PEAK fAt TFA up to 75°C. I 5 I max. ampRECURRENT (At TFA above 75°C. .• See fig.1 ,SURGE, for "turn-anll transient of

I I2 milliseconds duration:

At TFA up to 75°C. 35 35 35 35 35 35 35 max. ampAt TFA above 75°C. 0( See fig.1 ~

SURGE, repetitive, at TFA = 25°C:

I I IFor one cycle of supply voltage 40 40 40 40 40 40 40 max. ampFor more than one eye Ie of

suppl y vol tage. 0( See fig.2

TEMPERATURERA.NGE(FREE-AIR) I IOperating •• -65 to + 135 °cStorage . 0( -65 to + 150 °c

Character i s tics:

IN2858A I N2859A I N2860A I N2861 A IN2862A IN2863A IN286'1A

Maximum forward Voltage Drop (IX:)at IF = 1 Ampere, TFA = 25°C. 1.2 1.2 1.2 1.2 1.2 1.2 1.2 vol ts

Maximum Dynamic Reverse Current(Averaged over 1 Complete Cycleof Supply Voltage): at MaximumRated PRV:

TFA = 50°C 0.1 0.1 0.1 0.1 0.1 0.1 0.1 maTFA = 75°C 0.3 0.3 0.3 0.3 0.3 0.3 0.3 ma

40

"' 35\-30 '""''"ffi

'"Q.

'" 25«

20\I''"'"cr

15 """iil~ ........r-.x« 10

'" 5

92C5·13081

Fig.2 - Repetitive Surge Current Rating Chart forRCA-lN2858A through lN2864A.

DC FORWARD AMPERES = I I•. 00 NOT EXCEED MAXIt.4UM PEAK-

100

REVERSE ~OLTA~[ R~T1NGI.I I··'" · FREE-AIR TEMPERATURE (Oel 75w

~ ,'-- I---- 'N28b41'

'" ----p--« 10~ ·u ·~ ·w

'" ,:5 LL2j59A~ i IN28bOJ' IN2BbiA IN2Bb2A IN28b3A IN2864A'" ··, 'fFREE AIR TEMPERATUREfoe =25

0.1 I I I

Q2CS-I0417RI

Fig.3 - Typical DynamicReverse Characteristics forRCA-1N2858A through lN2864A.

o.~ I l.~ 2 2.5INSTANTANEOUS FORWARD VOLTS I"'F)

92CS-973OR3

Fig.4 - Typical Forward Voltage and Current Char-acteristic for RCA-1N2858A through lN2864A.

o-75 -50 -25 0 25 50 75 100 125 150


Fig.5 - Forward-Current Capab il i ties of RCA-n~858Athrough lN2864A forOperation with Heat Sinkat Case Temperatures from -650C to +1350C.

12.5~~"-0..-'ZW

10 w>IE"co'-''-'"

7.5 ~~~~"wu>5 Q.W",:5=>Q.

"''''25)(4"'" o

-75 -50 -25 a 25 50 75 100FREE-AIR TEMPERATURE (TFA)-OC

o-75 -50 -25 a 25 50 75 100 125 150


LOAD: CAPACITIVE, RESISTIVE, OR INDUCTIVESUPPLY FREQUENCY (CPS)=60HEAT SINK: ALUMINUM 1/16" THICK, 1-1/2" X 1-1/2"

oa:

~o......~t! 1.5"'u>a:wwa:~~ I",,,,=>'"~ 0,5

'"'" o

-75 -50 -25 a 25 50 75 100 125 150FREE-AIR TEMPERATURE (TFA)-'-°C

Figs.6a, 6b, 6c, 6d, and 6e -Forward-Current Capabilities of RG4-1~2858A through iN2864Afor Operation with Heat Sinks.

T1NNERMANSPEED CLlP*

OREQUIVALENT

/

Fig. 7 - Suggested Methods for Attaching RCA-1N2858Athrough lN2864A to Heat Sink.

DIMENSIONAL OUTLINE (JEDEC-DO-J)FOR RCA-IN2858A through JN28~A


NOTESMIN. MAX. MIN. MAX.,. 0.027 0.035 0.69 0.89 ,., - 0.125 - 3.18 1,0 0.360 0.400 9.14 10.16,0, 0.245 0.280 6.22 7.11,0, - 0.200 - 5.08

F - 0.075 - 1.91

G, - 0.725 - 18.42

K 0.220 0.260 5.59 6.60L '.000 1.625 25.40 41.28

a - 0.025 - 0.64H 0.5 - 12.7 -

1. Dimension to allow for pinch or seal deformation

anywhere along tubulation (optional).

2. Diameter to be controlled from free end of lead to

within 0.188 inch (4.78 mmllrom the point 01

anachment to the body. Within the 0.188 inch

(4.78 mm) dimension, the diameter may vary to

allow for lead finishes and irrt9U1aritiM.

ffilrnLJDSolid StateDivision

1N52111N5212

Rectifiers1N5213 1N52161N5214 1N52171N5215 1N5218

RCA-IN5211, IN5212, IN5213, IN5214, IN5215,IN5216, IN5217, and IN5218* are hermetically sealedsilicon rectifiers of the diffused-junction type utilizingsmall cylindrical metal cases and axial leads. TypesIN5215, IN5216, IN5217, and IN5218 are insulatedversions of types IN5211, IN5212, IN5213, and IN5214,respectively. These rectifiers feature dc forward cur-rent ratings of up to 1 A, a surge-current rating of 50A,low forward voltage drop, low leakage currents, and anoperating-temperature range of -650C to +175°C.

SILICONRECTIFIERS

For Industrial andConsumer ·ProductApplications

IN5211throughIN5214

IN5215throughIN5218

e cylindrical design with axial leads far simple handlingand installatian

ecampact, hermetically sealed metal case(0.405" max. length; 0.240" max. dia.)

etypes lNS21S through lNS218 have transparent, high-dielectric-strength plastic sleeve over metal case

e high maximum forward-current ratings - up to 1 ampereDC at 7SoC

Maximum Ratings, Absolute-Maximum Values:For res istive or inductive load For capacitor-input {ilter

INS211 INS212 INS213 INS214 1NS211 INS212 INS213 INS214INS21S INS216 INS217 INS218 INS21S INS216 lNS217 INS218

PEAK REVERSE VOLTAGE •...• 200 400 600 800 200 400 600 800 max. VRMS SUPPLY VOLTAGE •...... 140 280 420 560 70 140 210 280 max. VFORWARD CURRENT:

For ambient temperatures up to75°C. For ambient temperaturesabove 75°C, see Rating Chart.DC •.......•..•.•.••.... 0.75 0.75 0.75 0.75 0.6 max. APEAK RECURRENT .•••••.•. 6 6 6 5 max. ASURGE - For "turn-ann- time

of 2 milliseconds ...•.....• 50 50 50 50 max. AAMBIENT-TEMPERATURE RANGE:

Operating ..•.........••.• 435 to +175 °cStorage .................. 435 to +175 °c

LEAD TEMPERATURE:For 10 seconds maximum 255 max. °c

Characteri stic s: INS211 INS212 INS213 INS214INS21S INS216 INS217 INS218

Maximum Instantaneous ForwardVoltage Drop at dc forwarg current

1.2 1.2 1.2 1.2 Vof 1 ampere and TA.s;. 75 C ••.• max.Maximum Reverse Current:

Dynamic, at TA = 750C** .....• 0.2 0.2 0.2 0.2 max. mAStatic, at TA = 25OC*** ..... . 0.005 0.005 0.005 0.005 max . mA

I WIOO.C> •00:0:""'''';< -~ ~ 80"-i:'~ -"u~~ 60

~~"-'"00:t- t- 40zzwwuo:"'0:w"Q. (J 20

104~,2

1086,2

o 102e0: 6

~ '0:

2~'"

108 'V" 6 ,,;-"'1- :,v~ ,Z 2 ", ;)''">-

I ~"",z

~ 4I'" 2

0.1 I

Fig.2 - Typical Forward Characteristics for TypeslN5211 through lN5218 .

• DO NOT EXCEED MAXIMUM PEAK-REVERSE-VOLTAGE RATING.SOLID-LINE CURVES: DYNAMIC CHARACTERISTICS

MEASURED AT AMBIENT TEMPERATURE:: 75° C AND ATMAXIMUM DC FORWARD-CURRENT RATING

DASHED-LINE CURVES: STATIC CHARACTERISTICSMEASURED AT AMBIENT TEMPERATURE :E 25° C

1008

6

,- -z,"

\~

~ ~\~

\~~2\62 IN5214i=="P 1l'l5~r- IN5218...-"'- ~

...-...-1--

10

8

6

4

w

'"::i 2

~0:

If::: ~ l'l~~-z,,--- \l:!.~.l\~,= \l'l~.l\4

81- -.,,<z:J>" ;- .,'(ll~~Il;~ 1l'l~2 'N~218I- ~'\.~~~

6

4

2

0.1

Fig.3 - Typical Reverse Characteristics for TypeslN5211 through lN5218.

DIMENSIONAL OUTLINEfor Types 1N5211, lN5212, lN5213, lN5214

POLARITYSYMBOL(NOTE 2)

ANODELEAD

.033-.039"OIA.

DIMENSIONAL OUTLINEfor Types lN5215, lN5216, lN5217, lN5218

1.4"MIN.

i POLARITYSYMBOL

(NOTE 2)

r1.4"

MIN.

i-t

1.4"MIN.

METAL CASEWITH

INSULATINGSLEEVE

(NOTE 3) -+1.4"MIN.

ANODELEAD

.033- .039" DIA . 1

~

r-MA"x40~"A

GLASS _ I ® IINSULATION

- G -I

O32C5- 14456

Insulating Sleeve Dielectric Strength: 2000 Volts Minimum

NOTE 1: CONNECTED TO METAL CASE.

NOTE 2: ARROW INDICATES DIRECTION OF FORWARD(EASY) CURRENT FLOW AS INDICATED BYDC AMMETER.

NOTE 3: INSULATING SLEEVE MAY EXTEND 1/16" BE-YOND ENDS OF CASE.

~

' ~240'MAX.OIA.

GLASSINSULATION

G

92CS- 14457

CONNECTED TO METAL CASE.

ARROW INDICATES DIRECTION OF FORWARD(EASY) CURRENT FLOW AS INDICATED BYDC AMMETER.

NOTE 1:NOTE 2:

TERMINAL DIAGRAMfor Types 1N5211 through lN521B

CATHODE,CASE

1.5-A,50-1000-VSilicon RectifiersPlastic-Packaged, General-PurposeTypes for Low-Power Applications

- High surge-current capability- Low junction-to-Iead thermal impedances- -65 to +1700 operating temperature range

RCA-l N5391--1 N5399, inclusive, are diffused-junction typesilicon rectifiers in an axial-lead plastic package. These de-vices differ only in their voltage ratings.

Their small size and plastic package of high insulation resis·tance make these rectifiers especially suitable for those appli-cations in which high packaging densities are employed.

REPETITIVE PEAK-

NON-REPETITIVE PEAK'"

WORKING PEAK'"

DC BLOCKING (At TA = '50°C)RMS

FORWARD CURRENT:

VRRMVRSMVRWMVRVR(RMS)

Oi N M ~ :£ :g •... 1!l '"'" '" '" ~M M M M M M M MIII III III III III III III III IIIZ Z Z Z Z Z Z Z Z- - - - - - - - -

50 100 200 300 400 500 600 800 ,000 V100 200 300 400 525 650 800 1000 1200 V

50 100 200 300 400 500 &Xl 800 1000 V

50 100 200 300 400 500 600 800 1000 V

35 70 140 210 280 350 420 560 700 V

Single-phase, half-wave operation with SO-Hz sinusoidal voltageand resistive load, and 1/2-inch leads; for other lead lengths,see Fig. 1. TA = 70°C

PEAK SURGE ..

For one-half cycle of applied voltage, 50 Hz (10 ms)

"60 Hz (8.3 ms)

400Hz (1.25msl. TA = 70°C

Storage .

Operating .

"LEAD TEMPERATURE (During Soldering):

Measured 1/8 inch from case for 10 s max.

4550

,00See Fig. 4.

. -65 to +175

......•..•...... -65 to +170

• For single-phase, half-wave sinusoidal pulse of 100-1-£5 duration with a repetition rate of 60 pulses per second ..•. for one single-phase, half-wave, GO-Hz sinusoidal pulse with this peak value ..•. Maximum input~voltage rating that can be continuously applied (with the maximum current rating) over the normal operating

temperature range I. For single-phase, half-wave operation with a GO-Hz sinusoidal supply and a resistive load.In accordance with JEDEC registration format JS-1 RDF-3.

LIMITSCHARACTERISTIC SYMBOL All Types UNITS

Min. Typ. Max.

Reverse Current:*Static

For VR = rated value & TJ = 25°C IR - 0.001 0.01* mAFor VR= rated value & TJ = 1500e - 0.100 0.3*

*Oynamic

Full'cycle average, for VRWM = ratedIR(AV) 0.080 0.3* mAvalue, 10 = 1.5A, T A = 70°C -

*Instantaneous Forward-Voltage Drop:At iF = 1.5A, TA = 70oe, see Fig. 3. vF - 1.1 1.4* V

Reverse-Recovery Time:At 'FM=30A,pulseduration =3.1IJ.S, TA = 250e

trr - 1.5 - JJS(See Fig. 7; for other conditions, see Fig. 8.)

*Thermallmpedance:Steady-State

J unction-to-anode-Iead °J·La - - 100 °CN/J u nct io n-to-cathode-I ead °J·Lk - - 100Anode-Lead } .. - - - 148 °CN//inCathode.Lead Free convection cooling - - - 148

TransientHeat-sink mounting with o-to-1 Y-," leads, andwith a pulse duration of 0.6 s. °J-HS(t) - 10 - °CN/For other pulse durations, see Fig. 6.

I-FF~lO~A~D!' R~E~SI~ST0'V,!E'"-:::=:-R=Ftmp:r===m==q:jCIRCUI,.'SINGlE-PHASE±± --j I 1--11 r:-:-VRWM - MAX. RATING =Ff I

~

~

\ INFINITE

(" ~ HEAT SINK~Y ~*.~".'So/+?... ~~

c( 1.5I

"!jE'"~ 1.0uo'"~fi'~ 0.5"":5it

Fig. 1 - Average·forward-eurrent derating curves for types1N5391--1N5399 for several lead lengths.

Fig. 2 - Variation of peak forward-power dissipation withpeak forward current.

92C5-17311

Fig. 3 -Peak forward-voltage drop vs. peak forward currentfor types 1N5391-1N5399.

6810 100

SURGE-CURRENT DURATION - HALF CYCLES92C5-17306

Fig. 4 - Peak-surge (non-repetitive) forward current vs. surge-current duration for types 1N5391-1 N5399.

-oj 1 1~

INFINITEHEAT SINK

~-1 r-.,,~

PC BOARD

92C5-17310

Fig. 5 - Variation of steady-state thermal resistance with leadlength (for different mounting methods) for types 1N5391--1N5399_

100

'._" ~~ II 1 -?-\~'f

~ °1 I,I~~"~"~rrr 314"~~ ,,~ 11.1/2"~ ~ to 1/4" f--:> ~~~ /0<-:>x ~0:;1;'"'"

...,~~ ,,"'

--j1i1!r- =.... " Vz, ,~~ ~=""Zz0<0~B~

INFINITEHEAT SINK

0.1 I II III

Fig. 6 - Variation of transient thermal impedance with pulseduration for several lead lengths for types 1N5391--1N5399.

I .U -L~~20~

- ~R~REC)~'":> fr.-tee.... "'-..,>- ""<r

10 OSCILLOSCOPE DISPLAY ON'"> 8 TEKTRONIX TYPE 541-A (WITH

~

TYPE "s" PLUG-IN UNIT 16 ..!:.:.o4 ~(

~ "'"<r

2 "-I

,"IL ~ T'"oC'1------~IO"lo~-3.I~S-----lt-T

~trr~

RECT. UNDER TEST+1~0.1 0.2 0.4 0.6 0.8 I 2 4 6 8 10

RATIO OF REVERSE CURRENT TO FORWARD CURRENT [IRMIREC)/IFM]92C5-17307

Fig. 7 - Oscilloscope display & test circuit for measurementof reverse-recovery time.

Fig. 8 . Variation of reverse-recovery time with ratio of re-verse-to-forward current for types IN5391--1N5399.

INCHES MilLIMETERSSYMBOL

MIN. MAX . MIN. MAX.

•• 0.027 0.035 0.686 0.889

""0.104 0.140 2.64 3.56

G 0.230 0.300 5.84 7.62

L 1.000 - 25.40 -1,. - 0.050 - 1.27

OOC05L}OSolid StateDivision

1-A, 50-to-1000-YSilicon Rectifiers

Plastic-Packaged, General-PurposeTypes for Low-Power Applications

• Low junction-to-Iead thermal impedances

• -65 to +1750C operating temperature range

ReA D1201 seriest devices are diffused-junction type siliconrectifiers in an axial-lead plastic package. These devices differonly in their voltage ratings.

tance make these rectifiers especially suited for those appli-cations in which high packing densities are desirable.

Their small size and plastic package of high insulation resis-


REVERSE VOLTAGE:

REPETITIVE PEAK'

NON-REPETITIVEPEAK·

WORKING PEAK'"

DC BLOCKING

RMS

FORWARD CURRENT:

AVERAGE-RECTIFIED:

Single-phase, half-wave operation with 60-Hz sinusoidalvoltage and resistive load; with '" leads. T A = 75°C

For other lead lengths

PEAK-SURGE (NON-REPETITIVE):

VRSMVRWMVRVR(RMS)

I 01201F ' 01201A 012018 '012010- -

01201P01201M 01201N(44001)' (44002)' (44003" 144004" (44005)' (44006" (44007)'

50 lOa 200 400 600 800 1000 V

100 150 300 525 800 1000 1200 V50 lOa 200 400 600 800 1000 V50 lOa 200 400 600 800 1000 V

35 70 140 280 420 560 700 V

All Types

10 A

See Fig.

IFSM

28 A30 A60 A

See Fig. 3

For one-half cvcle of applied voltage. 50 Hz (10 ms)

60 Hz (8.3 ms)400 Hz (1.25 ms)

For other durations

TEMPERATURE RANGE:

With l-inch leads & infinite-heat-sink mounting (both leads):

Storage & Operating.

LEAD TEMPERATURE (During Soldering):

Measured 3/8 in. (9.52 mml from case for 10 s max.- .

• Number in parentheses is a former ReA type number.

, For single-phase. half-wave sinusoidal pulse of 10Q-/Js duration and

a repetition rate of 60 pulses per second.

• For one single-phase, half-wave, 50-Hz sinusoidal pulse with thispeak value.

.••Maximum input voltage that can be continuously applied (with the

maximum current rating) over the normal operating-temperaturerange. For single-phase, half-wave operation with a 60-Hz sinusoidalsupply and a resistive load .

• Measured on anode or cathode lead.

LIMITS

CHARACTERISTIC SYMBOL All Types UNITS

Min. Typ. Max.

Reverse Current:StaticFor VR = rated value & TJ = 25°C ...............................

IR- - 0.01 mA

For VR = rated value & TJ = 100°C .............. - .............. - - 0.05

DynamicFull-cycle average, for VRWM = rated value, 10 = 1 A, TA = 750C 'R(AV) - - 0.03 mA.......

Instantaneous Forward-Voltage Drop:

At iF = 1 A, TJ = 25°C, see Fig. 2 ................................ vF - 0.95 1.1 V

Reverse-Recovery Time:

At IFSM = 30 A, pulse duration = 3.1 IlS, TA = 25°C, see Fig. 6 ......... trr - 1.5 - IlS

For other conditions .......................................... See Fig. 7

hermal Impedance (Junction-to-Heat Sink):Steady-StateHeat-sink mounting with 1-inch leads. For other mounting methods ()J-HS(t)

- 50 55 °C/Wand other lead lengths, see Fig. 4 . . ................... - ..........TransientHeat-sink mounting with 0 to 1" leads, and with a pulse duration of ()J-HS(t) - 7.5 - °C/W0.3 s. For other pulse durations, see Fig. 5 .. ...................... .

~?:J'UI~~~:~~~~~PHASE -11 t'--11 r-PEAK-R~VERSE WORKING VOLTAGE ~

(VRW",I- "'AX. RATING ~ ....•,..!!.~£b~

I- 1.0 INFINITE~ HEAT SINK

..J 0.8uo'"~ 0.6

'"~•.•.•0.4

'"..'"~ 0.2..

>I 6

-~2: 5Q.

0

'"04

'" AMBIENT TEMPERATURE 1/'"~ (TAl'" 2SoC (MAXIMUM) ........ ,0 3 2S·C (TYPICAL)

~ ,"O·c (TYPICAL,\""'.00

'"~ 2

~'"~" I

~

CURRENT WAVEFORM

O~FSM

U-ICYCLE

1 r- C

~~'TE

HEAT SINK

lr-11r-\% '------" ~~~~~

INFINITE ~~OHEAT (l:INK 0 ~

~

---IFSM :30~ I _ IRM(REC)

I 10%

r--31~'--l t-T~ trr...-

'~g AMBIENT TEMPERATURE (TA): 25<>C

60 ---.L1FSM••I 40

:~.l~20~...

:>.... '-.... l--- trr>- ""'-

'" 10 OSCILLOSCOPE DISPLAY ON...> 8 TEKTRONIX TYPE 541 A (WITH

~

6TYPE "S" PLUG-IN UNIT)

~A/.4 ~(

~ ""'"

2

I0.1 0.2 0.4 0.6 0.8 I 2 4 6 8 10

RATIO OF REVERSE-lO-FORWARD CURRENT [IRM(RECI/1FSM]

92CS-I1249Rl


MIN. MAX. MIN. MAX.

<pB 0.030 0.034 0.762 0.863 -

<pD 0.133 0.137 3.378 3.479 1

G 0.280 0.285 7.112 7.239 1

L 1.000 - 25.40 - -

L1 - 0.050 - 1.27 2

NOTES

1. Package contour optional within cylinder of diameter, <PO, and length, G.Slugs, if any, shall be included within this cylinder but shall not be subject tothe minimum limit of ¢o·

2. Lead diameter not controlled in this zone to allow for flash, lead-finishbuild-up. and minor irregularities other than slugs.

These silicon rectifiers are intended for use ingenerator-type power supplies for mobile equipment; indc-to-dc converters, power supplies for de motors, trans-mitters, rf generators, welding equipment, and elec-troplating systems; in dc-blocking service, magneticamplifiers, and in a wide variety of other applicationsin industrial equipment.

HALF.WAVE RECTIFIER SERVICEAbsolute-Maximum Ratings for Supply Frequency of 60 cps,

Single-Phase Operat ion, and wi thResistive or Inductive Load

PEAK REVERSEVOLTS.

TRANSI EJVf RE-VERSE VOLTS.NCX'I-REPETI -TIVE (5 -msecmax. durationand case tem-perature rangeof 0 to 2000 C.

R\lS SUPPLY VOLTSDC RLOCKING

VOLTS.AVERAGE FORWARD

AMPERES:At 1500 Ceasetemperature ..At ot.her casetempera tures

PEAK RECURREJVfA\IPERES.

PEAK SURGEAMPERES: aOne-half cycle,sine wave.

100 200 35035 70 140

450 600212 284

700 800355 424

CASE- TEMPERATURERANGE: Operatingand Storage.

Character ist ics:Max. Forward b

Vol tage Drop(Volts). ..•

Max. ReverseCurrentb(Ma. )Dynami e . .Static ...

a Superimposed on device operating within the maximum volt-age, current, and temperature ratings and may be repeatedafter sufficient time has elapsed for the device to return

b La the presurge thermal-equi librium conditions.

/\vC'rage value for one complete cycle at case temperature ofIS00 C and at maximum rated vol tage and average forward current.

C l'C value, at maximum peak reverse voltage, and case tem-pf'raturc (oC) = 25.

• Available in reverse-polarity versions:INI3~IRB, JNI3~2RB, INI3~~RB, INI3~5RB, INJ3~6RB,IN J3~7RB, IN 13~8RB

• Designed to meet stringent mechanical andenvi ronmental speci fications

• Diffused-junction process -- exceptional uni-formity and stability of characteristics

• Hermetic seals• Low thermal resistance• Low forward voltage drop

• Welded construction• Low leakage current• JEDEC DO-~ outl ine

• High output current:up to 15 amperes -- 6 rectifiers in 3-phase,

full-wave bridae circuitup to 12 amperes - ~ rectifiers in single-

phase full-wave bridge circuitRATING CHART

TYPE OF OPERATION: CASE TEMPERATURE:A-DIRECT CURRENTB-SINGLE PHASEC - THREE PHASED -SIX PHASE

4-.."'""'~DFOC

~ MICA INSULATOR~ =:~:~::;I~=llSHEO

C0HEATSINK{CHASSIS'!

e DF3D

~~~.L;>~.;~~Tn~7:'~~Gm~~:~~Gc=====· THICKNESS~O.055in.

~

{l.40mmIMAX .•••V ••• IL .•..elEATPvILlSHEO

HAROWAREPRICE5

NA59B ~ ~i~INSULATORCONNECTOR~ - ..•••••..••IL .•••8LE .•..TI'V8lISHEO

.•.•••.•.. 'l,. ..••8U .•. TPUBLISHEO H .•. ROW .•..REPRICES

H .•• ROW ••..REPRICES 0

@ NRI09A }~ S:::~OCKWASHER :~~~:.O~ HEX. NUT

In the United Kingdom, Europe, Middle East, and Africa, mounting-hardware policies may differ; check the availability of all itemsshown with your ReA sates representative or supplier.

DIMENSIONAL OUTLINEJEDEC 00.4

r·424"i="~.l.437".424"

NoSfl3.-/' U

••• Polarity symbol for types

1N13~18, 1N13~28, 1N13~~8.1N13~58. 1N13~68. 1N13~78.and 1N13~88

·Polari ty symbol for types1N13~lR8. 1N13~2R8, 1N13~~R8.1N13~5R8. 1N13~6R8. 1N13~7R8.and 1N13~8R8

Note I: Normal installation torque is 15 to 20inch-pounds appl ied to a 10/32 UNF-28 hex nutassembled on stud thread. The appl ied torqueduring installation should not exceed 25 inch-pounds.

Note 2: Diameter of unthreaded port ion: 0.189"max., 0.163" min.Mote 3: Angular orientation of this terminal isundef j ned.

Note~: Thedevice may be operated inany position.

ffil(]5LJDSolid StateDivision

Rectifiers1N1200A 1N1204A1N1202A 1N1205A1N1203A 1N1206A

Used in generator-type power supplies formobile equipment; in dc-to-dc converters,battery chargers, and machine-tool controls;in power supplies for aircraft, marine, andmissile equipment, for de motors, trans-mitters, rf generators, welding equipment, andelectroplating systems; in dc-blockingservice, and in a wide variety of other appli-cations in military and industrial equipment.

HALF-WAVE RECTIFIER SERVICEAbsolute-Maximum Ratings for SuPPly frequency of

60 cps, Single-Phase Operation, and withResistive or Inductive Load

PEAK REVERSEVOLTS ...

TRANSIENT RE-VERSE VOLTS,NON -REPETl -TlVE (5-msecmax. durationand case tem-

~fr 0 ttUof"Z0030n E>RMS SUPPLY VOLTSIX: llLOCKING

VOLTS ....AVERAGE FORWARD

AMPERES:At 1500 Ceasetemperature .At other casetemperatures.

PEAK I1ECUI\I1E~TAMPEI1ES .PE~p~~~~E.

One-hal f cycle.Sine wave ..For one or morethan one cycle.

CASE-TEMPERATURERANGE: Operatingand Storage . .

- avai lable in reverse-polarity versions:INI199-RA, INI200-RA, INI202-RA, INI203-RA,INI20'l-RA, IN 1-205-RA, INI206-RA

100 200 350 450 600 700 800 - designed to meet stringent mil itary mechanical35 70 140 212 284 355 424 and environmental specifications

50 100 200 300 400 500 600 - diffused-junction process -- exceptional uni-formity and stability of characteristics

- hermetic seals _ welded construction12 12 12 12 12 12 12

See Fig.50 I 50 I 501 501 50 I 50 I 50

240 I 240 I 2401 2401 2401 240 I 240See Fig.4

-65 to +2000 C

Max. Forward '"Voltage Drop(Vol tsl . . .

Max. ReverseCurrent (\1a.):Dynamic .•....

Static· ...Max. Thermal

Resistance,Junction-to-Case. . . . .

- low thermal resistance _ low leakage current• low forward voltage drop _ JEDEC DO-'l outl ine- high output current:

up to 30 amperes -- 6 rectifiers in 3-phase,full-wave bridge circuit

up to 2'l amperes -- 'l rectifiers in single-phase full-wave bridge circuit

·S . d d· .. h' huperlmpose on eVlce operatIng WIt In t emaximum voltage, current, and temperature ratingsand may be repeated after suffIcient time haselapsed for the device to return to the presurgethermal-equilibrium conditions.

• Average value for one complete cycle at case tem-perature of 1500 C and at maximum rated voltageand average forward current.

NATURAL COOLING.SINGLE-PHASE OPERATION.RECTIFIER TYPE IS STUD-MOUNTED DIRECTLY

ON HEAT SINK.HEAT SINK: 1/16"-THICK COPPER WITH A MAT

BLACK SURFACE AND THERMAL EMISSIVITYOF 0.9.

<1'..• - ...~,

!r>'to~\ ':.

50 100 150 200INCOMING-AIR TEMPERATURE-·C

10 92CM-1I067RI

~. ~'t:!~~~'t~,

~~

Fig.2 - Operation Guidance Chart for allTypes and corresponding reverse-

polarity versions.

Fig.3 - Operation Guidance Chart for allTypes and corresponding reverse-

polarity versions.

SUPPLY FREQUENCY-60 CPS SINE WAVECASE TEMPERATURE-ISO· CRESISTIVE OR INDUCTIVE LOAD.RMS SUPPLY VOLTAGE· MAXIMUM-RATED VALUEAVERAGE FORWARDCURRENT-MAXIMUM-RATED VALl£.

2SO

"'-200

""-...... "'-"~or"

"'-~~ ISO

~~ "'-~~ 100 "'-2••• '-..xQ. ~.,:>~<t 50

2 4 , • 2 4 , •

Fig.4 - Peak-Surge-Current Rat ing Chart forall Types and corresponding reverse-

polarity versions.

FOR DC ~;E~_~~~~l.gS;E:.M;~~.T~~~Y~ ~~.~T;~~7:~~8f::rmn~ •... : .•:: : j : : : J: .:..

. ~I.;;, ...........1:.

Ill!. : :.1:.'.

~ L4~~ ••••• : .•• : "'~' .'." .:: .••••

~ .;; ..•'K .•••... .... ." i2 1.3 ~~i;E+ :! K. ::::: j::::::

~ ::f; :~.l";". ~:E 1.2 ...

~ ii:t:1 ..~ t~~ ..1;:, \.1'---

u ... > :; :::: ;~111ill;~i : .,': 'ii!o BO 100 120

'I:'T

.. ···I:l ..::.: :&:: •....:1: :!~:1~ , ,.,: : I

Fig,5 - Current-Multiplying-Factor Chart forPolyphase andDC operation for all Types and

corresponding reverse-polarity versions.

Fig,6 - Typical Forward Characteristics forall Types and corresponding reverse-

polarity versions.

~~'"w~ 2.5

~~" 2w~'"w~ 1.5

~8 I

~~ O.5.~

Fig.7 - Typical Reverse C1aracterist ics forall Types and corres?cndir.g reverse-

polarity versions.

~''''"'''"DFGC

~ MICAfNSULATOR~ :::~:~::;,:~:lISHEO

QHEATSINK{CHASSIS}

e OFJO

~~6.L~~_;;~~n~~:'~~Gm~~:~~Gt:===== THICKNESS -0.055'n.e;::-------- :::~:~:~~~:Lt~ED

NR59B fO'--- ~~~INSULATOR

CONNECTOR~ - •••V".L ••..•UATPV8LISHEOAVAIlA8lE AT PVIlISHEO HAflOWAFlE PRICES

HA,flOW"AE,.".,CES 0

@ ~:~~~CKWASHER}SVPPllEO

~ NA38C :~:~CE.~ HEX.NUT


Fig.8 - Sugges ted Moun t ing Arrangemen t,

Because these rectifiers may operate at volt-ages which are dangerous, care should be taken inthe design of equipment to prevent the operatorfrom coming in contact with the rectifier.

The recommended installation torque is 15 to20 inch-pounds applied to a 10/32 UNF'-2B hex nutassembled on stud thread.

The applied torque during installation shouldnot exceed 25 inch-pounds.Use of Rat ing Charts and Ope rat ion Gu idance Chart.

Fig.5 is used in conjunction with Fig.2 andFig. 3 to determine maximum average forward amperes

per rectifier cell for polyphase operation anddc operation. The procedure for the use ofFig.5 is as follows:

Step. I: . From Fig.5 determine the current-multipl Ylng factor for the app licable conductionangle. (For dc operation use current multi-plYing factor of 0.8.)

Step 2: Divide the required load current inamperes by the number of rectifier circuitbranches - as shown in the following Table -to determine average forward amperes per recti-fier cell.

Type of Operation Ho. of Circuit BranchesSingle-Phase, Full-

Wave:Center-Tapped 2Bridge 2

Three -Phase:Wye 3lliuble Wye 6Bridge 3

Six-Phase Star 6

Step 3: Multiply average forward amperesestablished in Step 2 by the current-multiplyingfactor established in Step 1 to determineadjusted average forward amperes per rectifiercell, for use with Fig.2 or Fig. 3.Step~: Using the product obtained in Step 3.determine from Fig.2 or Fig.3 either (a) themaximum allowable incoming-air temperature orambient temperature for a given heat-sink size,or (b) the minimum heat-sink size for a givenincoming-air temperature or ambient temperature.

ExampleCond it ions:

(a) Three-phase, half-wave (wye) operation, coo-duction angle = 1200

(b) Desired output current = 30 amperes(c) Forced-air cooling; incoming-air tempera-

ture = 900 C

Problem:Determine mlnlmum heat-sink Slze.

Procedure:Step 1: From Fig. 5, the current mul tipl yingfactor for a conduction angle of 1200 is1.18.Step 2: For three-phase half-wave operationthe number of rectifier circuit branches isthree. The average forward current througheach rectifier cell is, therefore, 30/3,or 10 amperes.Step 3: Multiplying average forward amperes(10) obtained in Step 2 by the current-multiplying factor (1.18) obtained in Step 1yields 11.8 adjusted forward amperes.Step 4: From Fig.3, for forced-air cooling.the minimum heat-sink size for the conditionsshown is 2-1/2" x 2-1/2".

DIMENSIONAL OUTLINEJEDEC 00-4

r·~~~'·~

-·"~e·.·.··. ..t". .. ....... .424'1SEE /' If I

INOTE :3 ---- .. ~

.t. Polarity symbol for typeslNl199-A. lN1200-A.lN1202-A. lN1203-A.lN1204-A. IN1205-A. andlN1206-A.Polari ty symbol for typeslNl199-RA. lN1200-RA.lN1202-RA. lN1203-RA.lN1204-RA. lN1205-RA.and IN1206-RA.

Hote I: Normal installation torque is 15 to 20inch-pounds appl ied to a 10/32 UNF-2B hex nutassembled on stud thread. The appl ied torqueduri ng j nstallat jn,.., :-=:t')c ld not exceed 25 i nch-pounds.Hate 2: Diameter of unthreaded port ion: 0.189"max., 0.16)" min.Hote 3: Angular orientation of this terminal isundefined.Hote~: Thedevice maybeoperated inany position.

OO(]5LJ[]Solid StateDivision

Rectifiers1N249C 1N1196A1N25OC 1N1197A1N1195A 1N1198A

Appl icat ions:In power supplies for mobile equipment,

dc-to-dc converters, battery chargers,dynamic braking system~, aircraft andmissile power supplies, high-power trans-mitter and rf-generator power supplies,machine-tool controls, dc-motor powersupplies, and in other heavy-duty in-dustrial and military equipment.

HALF-WAVE RECTIFIER SERVICEMaximum Ratings:

Absolute-Maximum Values for SUPPly frequency of60cps, Single-Phase Operation, and with

Resistive or Inductive Load

PEAK INVERSEVOLTS ..

RMS SUPPLYVOLTS . .

DC BLOCKINGVOLTS ..

FORWARDAMPERES:Average DC:

At 1500 Ccase tern·perature.At othertemperatures

PEAK RECURRENTAMPERES .

PEAK SURGEAMPERES:.(One-half

cycle, sinewave) ••

(For morethan onecycle). •

CASE TEMPERA-TURE:Ope ra t ingand Storage -65 to +1750 C

Characteristics at 1500 C Case TemperatureMax. Forwa I'd

Vol tage Drop.(Volts) •• 0.6 10.6 10.6 10.6 I 0.6 I 0.6 1 0.6

Max. Reve rseCurrente(Ma.) ... 3.813.613.413.212.512.211.5

• Superimposed on device operating within themaximum specified voltage, current, and temper-ature ratings and may be repeated after suf-ficient time has elapsed for the device toreturn to the presurge thermal equilibriumconditions •

• At ma~imum peak inverse voltage, average for-ward amperes = 20, and averaged over one com-plete cycle.

• availableIN2~8-RC,IN 1196-RA,

in reverse-polarity versions:IN2~9-RC, IN250-RC, INI195-RA,INI197-RA, INII98-RA

• designed to meet stringent military mechani-cal and environmental specifications

55 110 220 :!OO 400 500 600 • diffused-junction process -- exceptional unl-39 77 154 212 284 355 424

formity of characteristics• hermetic seaIs • welded construction

50 100 200 300 400 500 600 • low thermal resistance • low leakage current• low forward valtage drop • J EoEC 00-5 outl ine• high output current: UP to

20 20 20 20 20 20 20 8~ amperes -- 6 rectifiers in 3-phase,See Rating Chart full-wave bridge circuit

90 I60 amperes -- ~ rectifiers in slngre-

90 1 90 I 90 1 901 90 I 90 phase full-wave bridge circuit

350 1350 1 350 1 350 1 350 1 350 I 350

See Rating Chart IV

Fif· 1 - Rattnf Chart 1 for Types IN248-C,1N249-C. IN250-C. INl195-A. INl196-A.INl197-A, INl198-A. and correspondinf

reverse-polarity versions.

2.

::la:'"..~ 20

ca:.•~a:~'" " i?',u.•15~'":> '0'"".•'"

92CM-I0741

Fi~. 2 - Hatin£! Chart II for Types iN248-C.1N249-C. IN250-C. INl195-A. INl196-A.INl197-A. INl198-A. and correspondin~


SUPP\..Y fREQUENCY;:::60 CPS SINE WAVECASE. TEMPERATURE =1.~·CRESlSTIV[ OR INDUCTIVE LOADRMS SUPPLY VOLTAGE =h4AXIMUM RATED VALUEDC OUTPUT CURRENT=MA,)(IUUU RATED VALUE

400

~d300\

~ '\..

~3"-~~2oo •••.......

~:J -",15 -~~ 100", .•0

9ZCS-I090Q

Fi~.4 -Hatin£! Chart IV for Types IN248-C.1N249-C. IN250-C. INl195-A. INl196-A.INl197-A. INl198-A. and correspondin~


ttLACt\ 5URFAC~ ANO THt.RMAL EM,ss'V'1TilllllllOF 0.9,INCOMNG-AIR TEMPERATURE: MEASUREO AT A POINT

IN SPACE !4. AWAY FROM T..-E CASE AND!4" BElDW THE HEAT SINK.

'"u.•15~'"i 10X.•'"

92CM-I074!t

Fi~. 3 - Hatin~ Chart III for Types IN248-C.1N249-C. IN250-C. INl195-A. INl196-A.INl197-A. INl198-A. and correspondin~


Fi£!.5- Chart V for Types IN248-C. 1N249-C.IN250-C. INl195-A. IN1196-A. IN1197-A•

INl198-A. and correspondin£! reverse-polarity versions.

Fif!.6 - TYPical Forward Charactensticsfor Types IN248-C, 1N249-C. 1N250-C.INl195-A. INl196-A, INl197-A, 1Nl198-A, andcorrespondinf! reverse-polarity verSions.

Fif!.7 - TYPical Reverse Charactensticsfor Types IN248-C, 1N249-C, IN250-C.INl195-A, INl196-A, INl197-A, INl198-A. andcorrespondinf! reverse-polarity versions.

Because these recti fiers may operate at vol t-ages which are dangerous, care should be taken inthe design of equipment to prevent the operatorfrom coming in contact wi th the recti fier.

The recommended installation torque is 26 to36 inch-pounds applied to a 1/4-28 lNF-2A hex nutassembled on thread.

The appl ied torque during installation shouldnot exceed 75 inch-pounds.Use of Rating Charts

O1art V is used in conj unction wi th RatingO1arts II and III to determine maximum averageforward amp~res per recti fier uni t for polyphaseoperation and dc operation. The procedure forthe use of O1art V is as follows:

Step I: From Chart V determine the current-multiplying factor for the applicable conductionangle. (For dc operation use current multi-plying factor of 0.8.)Step 2: [nvide the required load current inamperes by the number of rectifier circuitbranches -- as shown in the following Table --to determine average forward amperes per recti-fier element.

Type of Operation No. of Circuit BranchesSi~gle-Phase, Full-wave:

Center-Tapped 2Sri e 2

ree- ase:Wye 3Double Wye 6Bri e 6

lX- ase tar

Step 3: Multiply average forward amperes es-tablished in Step 2 by the current multiplyingfactor establ ished in Step 1 to determine ad-

justed average forward amperes per rectifierelement, for use with Rating O1art II or RatingO1art III.Step ~: Using the product obtained in Step 3,determine from Rating Chart II or Rating O1artIII either (a) the maximum allowable incoming-air temperature or ambient temperature for agiven heat-sink size, or (b) the minimum heat-sink size for a given incoming-air temperatureor ambient temperature.

Cond itions:(a) Three-phase, half-wave operation; con-

duction angle = 1200

(b) Desired output cur~ent = 45 amperes(c) Forced-air cooling; incoming-air temper-

ature = 900 C

Problem:Determine minimum heat-sink Size.

Procedure:Step 1: From O1art V, the current multiplyingfactor for a conduction angle of 1200 is 1.18.Step 2: For three-phase half-wave operationthe number of rectifier circuit branches isthree. The average forward current througheach rectifier element is, therefore, 45/3,or 15 amperes.Step 3: Multiplying average forward amperes05) obtained in Step 2 by the current multi-pI ying factor (1.18) obtained in Step 1 yields17.7 adjusted average forward amperes.Step 4: From Rating Chart III, for forced-air cooling, the minimum heat-sink size forthe conditions shown in Step 3 is 3" x 3".


DIMENSIONAL OUTLINEJ EOEC 00-5

.140' MIN..I7S" MAX.

CIA.HOLE

• Pol ar i ty symbol for typeslN2~B-C. lN2~9-C. lN250-C.lN1195-A. lN1196-A. lNl197-A.and lN119B-A.

* Polarity symbol for typeslN2~B-RC. lN2~9-RC. lN250-RC.lNl195-RA. lN1196-RA. 1~1197-RA.and lNl19B-RA.

NOTE 2: ANGULAR ORIENTATION OF THIS TERMINAL UNDEFINED.

NOTE 3: DEVICE CAN BE USED IN ANY POSITION.

[Jla3LJOSolid StateDivision

1N1183A 1N1184A1N1186A-1N1190A

40-Ampere Silicon RectifiersStud-Mounted Types for Industrial and Military Power Supplies

Features:_ Low thermal resistance - Welded construction_ Low forward voltage drop - Low leakage current_ High output current: - JEDEC DO-5 Outline

up to 160 amperes - 6 rectifiers in 3-phase, full-wave bridge circuitup to 120 amperes - 4 rectifiers in single-phase, full-wave bridge circuit

• Available in reverse-polarity versions:1N1183RA, 1N1184RA, 1N1186RA, 1N1187RA, 1N1188RA, 1N1189RA,1N1190RA

- Extra-high-strength zirconium-alloy mounting stud - withstands installationtorque of up to 50 inch-pounds

- Designed to meet stringent military mechanical and environmentalspecifications.

RCA-1N1183A, lNl184A, lN1186A, lNl187A. lNl188A.1Nl189A, and 1Nl190A are 40·ampere, diffused-junctionsilicon rectifiers suitable for use in generator·type powersupplies for mobile electrical and electronic equipment, indc-to-dc converters and battery chargers, and in powersupplies for aircraft, marine, and missile equipment. trans·mitters, and rf generators. They are also extremely useful inpower supplies for de motors, in welding and electroplatingequipment. in dc-blocking applications, in magnetic ampli-fiers, and in a wide variety of other applications inheavy-duty industrial and military equipment.

- Diffused·junction process - exceptional uniformity andstability of characteristics

• Hermetic seals

These rectifiers are conservatively rated to permit continuousoperation at maximum ratings in applications requiring highreliability under severe operating conditions. In addition,they utilize a special zirconium-alloy mounting stud whichcan withstand installation torques of up to 50 inch-pounds -a feature of significant value in applications involvingmechanical shock and vibration.

lNl183A lNll84A lN1186A lN1187A lNl188A lNl189A lNll90APEAK REVERSE VOLTS ...•......•••...•.. 50 100 200 300 400 500 600RMS SUPPLY VOLTS ....................•. 35 70 140 212 284 355 424DC BLOCKING VOLTS .................... 50 100 200 300 400 500 600AVERAGE FORWARD AMPERES:

At 1 SOOC case temperature .............•.. • 40 ~At other case temperatures ................ • See Fig. 1 ~

PEAK SURGE AMPERES:'One-half cycle, sine wave ................. • 800 ~For more than one cycle ................. • See Fig. 5 •PEAK RECURRENT AMPERES ..•.........•. • 195 ~

CASE TEMPERATURE RANGE:Operating and storage .................... • -65 to +2000C •Characteristics:

Max. Forward Voltage Drop (Volts)b ........... • 0.65 •Max. Reverse Current (mAl:~nami~ •.........•..•.•......•...... 2.5 2.5 2.5 2.5 2.2 2 1.8StaticC ............................... • 0.015 ~

Max. Thermal Resistance,Junction·to-Case ........................ • I°C/W ~

a Superimposed on device operating within the maximum specifiedvoltage, current, and temperature ratings and may be repeated aftersufficient time has elapsed for the device to return to the presurgethermal--equilibrium conditions.

b Average value for one complete cycle, at maximum peak reversevoltage, maximum average forward amperes = 40, and casetemperature (OCI = '50.

C DC value, at maximum peak reverse voltage and case temperature(OCI = 25.

FORCED-AIR COOLING:AR VELOCITY"~I SINGLE-PHASE OPERATION.1000 FEET PER MINUTE PARALLEL RECTIFIER TYPE IS STUD-TO PLANE OF HEAT SlM<. MOUNTED OfiECTLY ON HEAT SN<.

4 HEAT SlNK:1/16--THICK COPPERWITH A MAT BLACK SURFACEAM> THERMAL EMISSIVITY OF 0.9.

tNCOttlNG-AIR TEMPERATURE;JlEASURED AT A POINT IN SPACE1/4- AWAY FROM THE CASE ANO114- BELOW THE HEAT SIM(.

SUPPLY F"REOUENCY:60 CPS SINE WAVE CASE TEMPERATURE:150o CRESISTIVE OR INDUCTIVE LOAD.RMS SUPPLY VOLTAGE:MAXIMUM-RATED VALUEAvERAGE FQRWARD CURRENT~MAXIMUM-RATED VALUE

800

~~ 600

\""~~,u

~~'"~~ 400

I----... --~~2'" --~i -:I:<J: 200

~ tOO

~ 80a

'"!e

92CS-1I340

Fig.6- Typical forward characteristics for all types and corres*ponding reverse-polarity versions.

~" ..~"~

~ ~i~~INSULATOR

~ :::~::;':I~~:LISHEO

GJ{~~~~~~~K

DF3HTEFLON' INSULATING BUSHING0.0.·0.315 on. (B.OOmmt0---- THICKNESS = 0.062 in. (1.53 mml MAX.

~!~~~~;~;~:?:.,o--0 A.A'CA"'''M''~'O

"..~...~"" ~~~:~CTOR~-

AVAILA8LEArf'U81.ISHEOHAROWAREPRICES ~. NR110A }

~ LOCK WASHER ~LIEU

~ NA388 :::CE~ HEX. NUT


INCHES MILLIMETERSSYMBOL MIN. MAX MIN MAX, NOTES

A - 0.450 - 11.43

b - 0.375 - 9.52 ,0.030 0.080 0.77 2.03.0 - 0.794 - 20.16.0, - 0.667 - 16.94

E 0.669 0.688 17.00 17.47

" 0.115 0.200 2.93 5.08 ,J 0.750 1.000 19.05 25.40

.M 0.220 0.249 5.59 6.32

N 0.422 0.453 10.72 11.50

N, - 0.090 - 2.28

S 0.156 - 3.97 -.T 0.140 0.175 3.56 4.44.w 1/4-28 UNF 2A 114.'1' UN' 'A 3, - I 0.002 - 0.050

" - 0.006 - 0.152

NOTES:

1: Ch"mfer Ofundercut on one or both 1100 of hex.n,,! bMe iloptionlil.

2: Angullll"o""en~tion.nd contour of Tetminal No.1 Iloption.1.3: oW il p'lch diilt1leterof coated threads. REF: Screw·Threll!d

St"nd"rds lor Feder,,1Services,HlOdbook H 28 Part I.Recommended torqu.: 30 inch-poundl.

OOcn5LJDSolid StateDivision

RectifierslN3255

lN3193 lN3195 lN3253 lN3256lN3194 lN3196 lN3254 lN3563

Diffused· JunctionSilicon RectifiersFor Industrial and Consumer-Product Applications

Features:• Cylindrical design with axial leads for simple handling and installation• Compact, hermetically sealed metal case (0.405" max. length;

0.240" max. dia.)• Insulated types 1N3253, 1N3254, 1N3255, 1N3256, and 1N3563

have transparent, high-dielectric-strength plastic sleeve over metalcase

RCA-1N3193, lN3194, lN3195, lN3196, lN3253, lN3254,1N3255, 1N3256, and 1N3563 are hermetically sealed siliconrectifiers of the diffused-junction type utilizing small cylin-drical metal cases and axial leads. Types 1N3253, 1N3254,1N3255, and 1N3256 are insu lated versions of types 1N3193,lN3194, and lN3196, respectively. Type lN3563 is aninsulated rectifier which does not have an uninsulatedequivalent.

• High maximum forward-current ratings - up to 750 milli-amperes at 75 °c

• Peak-reverse-voltage ratings - 200 to 1000 volts• Maximum free-air operating temperature - 100 °c• Designed to meet stringent temperature-cycling and

humidity requirements of critical industrial and con-sumer-product applications

RECTIFIER SERVICE (For a supply-line frequency of 60 cps)MAXIMUM RATINGS, Absolute-Maximum Values:

For resistive or inductive load1N31931N3253

200140

1N31941N3254

400280

1N31951N3255

600420

PEAK REVERSE VOLTAGERMSSUPPLY VOLTAGE .FORWARD CURRENT:

For free-air temperatures up to75°C. For free-air temperaturesabove 75°C, see Rating Chart.DC .PEAK RECURRENT .SURGE - For "turn-on" time

of 2 milliseconds .FREE-AiR-TEMPERATURE RANGE:

Operating. . . . . . . .. . .Storage .

LEAD TEMPERATURE:For 10 seconds maximum .

Characteristics, At a Free-Air Temperature of 2SOC:

1N31961N3256

800560

For capacitor·;nput filter

1N35631N3193 1N3194 1N3195 1N3196

1N35631N3253 1N3254 1N3255 1N3256

1000 200 400 600 800 1000 volts700 70 140 210 280 350 volts

400 500 500 500 400 300 ma6 6 6 5 4 amp

35 35 35 35 35 amp

-65 to +100 °C-65 to +175 °C

255 °C

1N3195 1N31961N35631N3255 1N3256

1.2 1.2 1.2 volts

0.2 0.2 0.2 ma0.005 0.005 0.005 ma

Maximum Instantaneous ForwardVoltage Drop at dc forward currentof 0.5 ampere .

Maximum Reverse Current:Dynamic, at TFA = 750C" .Static, at TFA = 250C** .

• DO NOT EXCEED MAXIMUM PEAK-REVERSE-VOLTAGE RATING.SOLID-LINE OJRVES: DYNAMIC CHARACTERISTICS

MEASURED AT FREE-AIR TEMPERATURE.75- C AND ATMAXIMUM DC FORWARD-CURREHT RATING

DASHED LINE CURVES: STATIC CHARACTERISTICSMEASURED AT FREE-AIR TEMPERATURE" 25- C

'00···c9,q'.>

\t\:!>'l.t;)"!>

~ ~II- II,'.>Z~4 IN'3196, ",~~V IN'3256

IN~63V

'0···,

I,

-,~~~.,"'}- \~~~- ~;1~~\tl3\96

· ~~ ::- I"~;-~ I" 'ii~~"~ 1,,!t>6'.>

,i r-

I

,

0.1

92CS-I0919RJ

FigA- Typical operation characteristics of types 1N3194 and 1N3254in full·wave voltage·doubler service.

. :,TYPE

5 6 IN3194~I,N3254

r, +C

Jj:1+~

DC -.:jOUTPUT .!

c. VOLTAGE ~

~TYPE - j.:

IN3194,IN3254 _ . . .'

•. --F-cf-~..•.... .<C.25()~FD

. ··:100·

'" 160~0>I-:>

140a.t;0u0 120

9ZCS -I0915RI

Fig.8- Typical operation characteristics of types 1N3196 and1N3256 in half-wave rectifier service.

CATHODELEAD

(NOTE I)1.4 (35.6)MIN.

i

(2 LEADS)0.021 (0.686)0035 (0.889) DtA


NOTE 2: ARROW INDICATED DIRECTION OF FORWARD (EASY)CURRENT FLOW AS INDICATED BY DC AMMETER.

1.4 (35.6)MIN.

iMETAL CASE

WITHINSULATING

SLEEVE(NOTE 3)

~

' 10.24016.,01MAX. DIA.

GLASSiNSULATION

0135 (3.43) (2 LEADS)0.139( 353) DJA 0021 (0.686)

0035(0.889) DIA

92CS-11229R3


NOTE 2: ARROW INDICATES DIRECTION OF FORWARD (EASY)CURRENT FLOW AS INDICATED BY DC AMMETER.

NOTE 3: INSULATOR SLEEVE MAY EXTEND 1/16" BEYONDENDS OF CASE.

Material: Plastic

Wall Thickness: 0.002"

Dielectric Strength: 4500 volts/mil at 2SoC3150 volts/mil at 150°C

Moisture Absorption: 0.3%Surface resistivity is notaffected by moisture.

Degree of Transparency: Optically clear

DDJ]3LJDSolid StateDivision

Thyristors/ Rectifiers537025F 021015537035F 021035

021035F

1R *

021015021035021035F

Horizontial- DeflectionSeR's and RectifiersFor 1100 Large-Screen Color TVFeatures:• Operation from supply voltages between 150 and 270 V (nominal).• Ability to handle high beam current; average 1.6 mA de.• Ability to supply as much as 7 mJ of stored energy to the de-

flection yoke, which is sufficient for 29 mm-neck picture tubes,as well as 36.5 mm-neck tubes, both operated at 25 kV (nominalvalue!.

• Highly reliable circuit which can also be used as a low-voltagepower supply.

These ReA types are designed for use in a horizontal outputcircuit such as that shown in Fig. 1.

The silicon rectifier D2101S (40892)* may be used as aclamp to protect the circuit components from excessivelyhigh transient voltages which may be generated as a result ofarcing in the picture tube or in a high-voltage rectifier tube.The silicon controlled rectifier S3703SF (40888) * and the

silicon rectifier D2103SF (40890)* are designed to act as abipolar switch that controls horizontal yoke current duringthe beam trace interval. To initiate trace-retrace switchingand control yoke current during retrace. the silicon controlledrectifier S3702SF (40889) * and the silicon rectifier D2103S(40891) * act as the commutating switch.

To facilitate direct connection across each silicon controlledrectifier, S3702SF and S3703SF, the anode connections ofsilicon rectifiers D2103S and D2103SF are reversed ascompared to that of a normal power-supply rectifier diode.

COMMUTATINGSWITCHr----,

I,

HIGH-VOLTAGETRANSFORMER,....~---,

I

TRACE

J, CA ;-S~~~H I Ly

S3703SF I--.. II I

I

For a description of the operation of SeA deflection systems see ReA Application Note AN-3780."A New Horizontal Deflection System Using S3705M and S3706M Silicon Controlled Rectifiers";ST·3871; "An SeR Horizontal-Sawtooth·Current and High-Voltage Generator for MagneticallyDeflected Picture Tubes"; ST-3835, "Switching-Device Requirements for a New Horizontal·OeflectionSystem".


SILICON CONTROLLED RECTIFIERS

Non·Repetitive Peak Off-State Voltage:Gate open .

Repetitive Peak Off-State Voltage:Gate open ........................•....•.................

T C = BOoC ...............•.......•....•....•.••.•.•...Repetitive Peak Reverse Voltage:

Gate open .On-State Current:

T C :: 60cC. 50 Hz sine wave, conduction angle = 180°:Average DC .RMS . ........•.........•..Peak Surge (Non-Repetitive):

For one cycle of applied voltage. 50 Hz .................•..Critical Rate of Rise of On-State Current:

For Vo = VOROM rated value, IGT = 50 mA, 0.1 J.iS rise time ...Gate Power Dissipatione;

Peak (forward or reversel for 10 J1s duration, max. reversegate bias = -35 V .

Temperature Range-;Storage .....................•....•..•.........•....•....Operating (easel .

TRACE SCR COMMUTATING SCRS3703SF S37U2SF

VOSOM BOO· 750' . V

VOROM750 700 V

VRROM 25 25 V

ITIAV) 3.2 3.2 A

ITlRMS) 5 5 A

ITSM 50 50 A

di/dt 200 200 A/J.iS

PGM 25 25 W

Tstg -40 to 150 DC

Tc -40 to BO °c

*Protection against transients above this value must be provided. Transients generated by arcing may persist for as long as 10 cycles.

-Any product of gate current and gate voltage which results in a gate power less than the maximum is permitted.

-remperature measurement point is shown on the DIMENSIONAL OUTLINE.

ELECTRICAL CHARACTERISTICS, At Maximum Ratings and at Indicated Case Temperature (TC)

SILICON CONTROLLEO RECTIFIERS

LIMITSCHARACTERISTIC SYMBOL S3703SF S3702SF UNITS

TYP. MAX. TYP. MAX.

Peak Forward Off-State Current:Gate open, VOO '" Rated VOROM IDOM

TC "'S50C . . . . . . . . . . . . . . . . . . . . ... 0.5 1.5 0.5 1.5 mA

Instantaneous On-State Voltage:iT'" 20 A TC '" 25°C . ...... .............. vT 2.2 3 2.2 3 V

OC Gate Trigger Current:TC::: 25°C . . . . . . . . . . . . . . . . .. .... .... .... .... 'GT 15 40 15 45 mA

DC Gate Trigger Voltage:TC::: 25°C ..... ............ ................ VGT 1.8 4 1.8 4 V

Critical Rate-of Rise of Off-State Voltage:TC .70°C ..- ....... .. . ....... ........ .... . .... dv/dt 700lMIN.lA 700 IMIN.lA VII'S

Circuit-Commutated Turn-Qff Time t:

TC '" 70°C, Minimum negative biasdunng turn-off time = -20 V (S3703SF)and -2.5 V IS3702SF)Rate of Reapplied Voltage (dv/dt) = 175 VIlls. .. .... ..... tq - 2.4 - - !JsRate of Reapplied Voltage (dv/dtl '" 400 V/lls .. ........ - - - 4.2 !Js

Thermal Resistance:Junction-to-Case ................................... ROJC - 4 - 4 °CIW

.& Up to 500 V max. See Fig. 3.This parameter, the sum of reverse recovery time and gate recovery time, is measured from the zero crossing of current to the stan of thereapplied voltage. Knowledge of the current, the reapplied voltage, and the case temperature is necessary when measuring tq. In the\/YOrst conditions (high line, zero-beam, off-frequency, minimum auxiliary load, etc.). turn-off time must not fall below the given values.Turn-off time increases with temperature; therefore, case temperature must not exceed 70oe. See Figs. 2 & 3.

'i:~~..l'I/I'I;??

021015

REVERSE VOLTAGE"":Non·repetitive peak ••...............•....•............•..Repetitive peak .......•....•..•.........................

FORWARD CURRENT:RMS ..............•..........•..•....•.......•.......Peak-surge (non·repetitive) ••.........................•.....Peak (repetitive) ..............•..•............•....•.....

3--7012

700 V800 V

p' A30 A

0.5 A

°c°c

°c

TEMPERATURE RANGE:Storage ...............•............•.........•........ T5tgOperating ICase) . . . . . . . . . . . . • . . . . . . . . . • . . • . . . . . . . . . • . . . .. T C

LEAD TEMPERATURE •••••:

For 10·s maximum .•.....•....•.........•...•...•..•.•.. , T L

** For ambient temperatures up to 45°C .•• For a maximum of 3 pulses, 10}J.s in duration, during any 64 /.Is period .•• Maximum current rating applies only if the rectifier is properly mounted to maintain junction temperature below 150°C. See Fig. 4 .•• At distances no closer to rectifier body than points A and B on outline drawing.


SILICON RECTIFIERS

MAXIMUM LIMITS

CHARACTERISTIC SYMBOL D2103S 021015 UNITSD2103SF

Reverse Current:Static

For VRRM = max. rated value, IF = 0, T C = 25°C ... · .......'RM 10 - IJA

For V R = 500 V, T C = 100°C ..... ..................... 250 -

Instantaneous Forward Voltage Drop:

At 'F = 4 A, T A = 75°C .......... . . . . . . .. . . . . . . ....... vF 1.4 1.5 V

Reverse·Recovery Time:

IFM = 3.14 A, % sinewave, -di/dt = -10 A/p.s, trr 0.5 0.7 IJspulse duration = 0.94 ps, T C = 25°C .. . . . . . . . . . . . . . . . . . . .

~--rI 6A

:~r---25/J-s-----l ~2.4/J-sI I II

~ r--""I,I

t75V//J-s +H' IREAPPLIED jdv/dt 1 I

II'IIIII II

~IO/J-$-;tq to-- : :~P'::'&~Dt: I dv/dtt 400V//J-sI I I REAPPLIED1 I'dv/dt,

IBOv __ L 1/ - - ~~O/

MAX. I

The SCR's and rectifiers can be operated at full current onlyif they have adequate heat sinking. The procedure illustratedin Fig. 4 should be used when mounting the SCA's. A singlealuminum plate made as shown in Fig. 5 will provideadequate heat sinking for trace and commutating rectifiers.Lip punching of the chassis at one end of the clamp plate,makes it possible to mount the rectifier using only one screw.

S3702SF and S3703SF fit socket PTS-4 (United InternationalDynamics Corp., 2029 Taft St., Hollywood, Fla.!, orequivalent.

Q 2 SCAEWS. 6·32~HOT"'V""L"'8L.EFIlOt.oAC'"

f!7=0DF31AMICA INSULATOR

' SUf'PLtEOw,THOEV'CE° 0o

o

00 ~cEHA:s~:~r

ee 495334-7

~ Q 2 NYLON INSULATING BUSHINGS~ I.D.-O.156,n.(4.00mm)

SHOULDER OIA .•-::... 0.250 In, (6.40 mml

U" SHOULDER THICKNESS"0.050 ,n. 0.27 mm) MAX.


2HEX.NUTS@

2S0LDER LUGS~

2HEX.NUTS@

}~, ...."'"FROMACA

In the United Kingdom, Europe, Middle East, and Africa. mounting-hardware policies may differ; check the availability of all itemsshown With your ReA sales representative or supplier.

FigA-Suggested hardware and mounting arrangement forsews S3702SF and S3703SF.

1.125------(·2a.581----1

o",·~l],~r0.312(7.92)

-~g5~~~~

Fig.5-Suggested clamp plate and mounting arrangement forrectifiers 02103S and 02103SF.

DIMENSIONAL OUTLINE (JEDEC TO-66)S3702SF,S3703SF

DIMENSIONAL OUTLINE (JEDEC 00-1)D2101S, D2103S, D2103SF

POLARITY SYMBOL INDICATES DIRECTIONOF FORWARD (EASY) CURRENT FLOW.THIS POLARITY 1$ OPPOSITE TO ReAPOWER SUPPLY RECTIFIERS.

INCHES MILLIMETERS


A 0.250 0.340 6.35 8.64.' 0.028 0.034 0.711 0.863.0 - 0.620 - 15.75.0, 0.470 0.500 11.94 12.70, 0.190 0.210 4.83 5.33

" 0.093 0.107 2.36 2.72, 0.050 0.075 1.27 1.91 2

" - 0.050 - 1.27 ,L 0.360 - 9.14 -

'p 0.142 0.152 3.61 3.88q 0.958 0.962 24.33 24.43

" - 0.350 - 8.89'2 - 0.145 - 3.68. 0.570 0.590 14.48 14.99


Pin 1 - GatePin 2 - Cathode




¢b 0.027 0.035 0.69 0.89 2

bl 0.125 3.18 1¢D 0.360 0.400 9.14 10.16

¢Dl 0.245 0.280 6.22 7.11

¢D2 0.200 5.08F 0.075 1.91

Gl 0.725 18.42K 0.220 0.260 5.59 6.601 1.000 1.625 25.40 41.28Q 0.025 0.64H 0.5 12.7

NOTES:1. Dimension to allow for pinch or seal deformation

anywhere along tubulation (optional).2. Diameter to be controlled from free end of lead to

within 0.188 inch (4.78 mm) from the point ofattachment to the body. Within the 0.188 inch(4.78 mm) dimension, the diameter may vary toallow for lead finishes and irregularities.


Thyristors/RectifiersS3705M D2600EFS3706M D2601DF

D2601EF

These RCA devices are silicon controlled rectifiers and siliconrectifiers intended for use in horizontal-deflection circuits oflarge-screen color· television receivers. A simplified schematicdiagram for the utilization of these SCA's and siliconrectifiers is shown below. For detailed information on theoperation of this new deflection circuit, seeApplication NoteAN-3780.

The S3705M (40640)* silicon controlled-rectifier and the02601EF (40642)* silicon rectifier are the trace circuitcomponents. They provide bipolar switching action forcontrolling the horizontal yoke current during the picturetube beam-trace interval.

The S3706M (40641) * silicon controlled-rectifier and the026010F (40643)* silicon rectifier are the commutating(retrace) circuit components. They control the yoke currentduring the retrace interval.

The 02600EF (40644)* silicon rectifier is used as a clamp inthe trace circuit to protect the circuit components fromexcessively high voltages which may result from possiblearcing in the picture tube or high-voltage rectifier.

• Designed for off-the-line operotion: B+ = 155 V

• Supply voltages: 108 to 129 V ac

• Outstanding performance and reliability

COMMU-

TATINGS3706M (RETRACE) D260lDF

SWITCH

SILICONCONTROLLED· - G--RECTIFIER AND ~ ~SILICONRECTIFIERCOMPLEMENTFor HorizontalDeflection Circuitsof Large-ScreenColor·TV Receivers

D2600EFD2601DFD2601EF

JEOEC00-26

• High picture-tube beam current capability: to 1.5mAdc average (max.)

• Can fully deflect pi cture tubes having deflection anglesto 90°, 1-7/16" neck diameters, and 25-kV ultor vol-tages (nom. value)

Repetitive Peak Off-State VoltageWith gate open .

Repetitive Peak Reverse VoltageWith gate open .

SCR SCR600

On-State Current:For case temperature of +600C and 60 HzAverage OC at 1800 conduction angle.RMS •.•...................

Peak Surge (Non· Repetitive)On· State Current:

For one cycle of 60 Hz voltage.

IT(AV)'T(RMS)

Critica I Rate of Rise of On·State Current:For VOX = V(BO)O rated value.IGT= SOmA, O.llJsrisetime .....•..

Gate Power Dissipationa;Peak (forward or reverse)for 10 IJS duration

Temperature Rangeb:Storage .Operating (case) ..

-40 to + ISO-40 to +100

a Any values of peak gate current or peak gate voltage to give the maximum gate power are permissible.

b For information on the reference point of temperature measurement, see Dimensional Outline.

/dV/dt~'

I

I

I VRX_____ ,:----.lI

I

II

I

III I

~'QI

tori-II

Breakover Voltoge:With gate open

At TC = + 100°C ....•...........At TC = +800C ...........•.....

Peak Forward Off-State Current:With gate open.VOO = V(BO)O rated value

At TC = +1000C .At TC = +800C .

Instantaneous On-State Voltage:For an on-state current of 30 A.TC = +250C .

DC Cate Trigger Current:At TC = +250C .

DC Cate Trigger Voltage:At TC = +250C .

Thermal Resistance:Junction-to-Case ....

Circuit-Commutated Turn-Off Time:(Reverse recovery time + gaterecovery time)

Trace SCR-At ITM = 6 A(tr = 25 ~s. di/dt = 2.5 A/~s).

Vo = 0 V (prior to turn on).Vo = 400 V (reapplied at 175V/~s).VR = 0.8 V (min.).IGT= 100mA.VGK(bias) = -30 V (68 D source).f = 15.75 kHz.TC = 70°C .

Commutating SCR-

At ITM= 13 A (Yo sine wave 7 ~s base.initial di/dt = 20 A/~s to 3 A).

Vo = 350 V (prior to turn on).dV/dt = 400 V/~s (to 100 V).VR = 0.8 V (min.)IGT= 100mA(tp= 3~s. tr= 0.2~s).VGK(bias) = -2.5V (47 D source

during turn ofO.f = 15.75 kHz.TC = 70°C ...........•......

S3705M S3706M UNITTrace SCR Commutating SCR

Min. Typ. Max. Min. Typ. Max.

V(BO)O 400 VV(BO)O 550 V

100M 0.5 1.5 mA100M 0.5 1.5 mA

vT 2.2 3 2.2 3 V

ICT 15 30 15 30 mA(dc)

VCT 1.8 4 1.8 4 V(dc)

ROJC 4 4 °C/W

S3705M, S3706M, D2600EF, D2601DF, D2601EF File 1'10.354

SILICON RECTIFIERS D2601EF D2601DF D2600EFMAXIMUM RATINGS: Trace Commutating Clamp

Silicon Rectifiers

Non-Repetitive Peak Reverse Voltagec .... VRM(nonrep) 700 800 700 V

Repetitive Peak Reverse Valtaged .. VRM(rep) 550 450 550 V

Forward Current: dDC ......... IF 1 1 1 ARMS . .. .. .. . IF(RMS) 1.9 1.6 0.2 APeak Repetitive. IFM(rep) 6.5 6 0.3 APeak Surgee ... IFM(surge) 70 10 20 A

Ambient Temperature Range:Operating .. TA • -40 to +150 • °eStorage ....... ....... Tstg • -40 to +175 °e

Lead Temperature:For 10 seconds maximum. ........... • 255 °e

CHARACTERISTICS:

Max. Instantaneous Forward Voltage Drop:At IF = 4 A, T A !o 75°C .... ....... vFM 1.3 1.3 2 V

Max. Reverse Current (Static):!At Te = 100°C .. IRM 0.25 0.25 0.25 mAAt T A = 25°C. . . . . . . IRM 10 10 10 I'A

Reverse Recovery Time:At IF = 20mA, IR = ImA, Te = 25°C. trr 1.1 1.1 1.6 max I'S

Turn-On Time:At IF = 20 mA, Te = 25°C .......... ton 0.3 0.3 0.3 max I'S

Peak Turn-On Voltage:At IF = 20 mA, Te = 25°C .......... 5 6 7 max V

C Pulse width = 10 J.LS, pulse repetition rate = 15.7 kHz,3 pulses.

For ambient temperatures up to 45°C and maximgm thermalresistance from reference point to ambient of 4S C/W J withdevices operating in circuit of Fig.I.

Pulse width = 3 ms.

At max. peak reverse voltage and zero forward current.

E0:a_'OO.w0"0:0:

~~~Q.. 60

~9:,j:@ 40.......0 •••...0:

~ 2O!Q. 0

-~ -~ 0 ~ ~ ~ 100 125 I~AMBIENT TEMPERATURE (TA)- °C

S3705M, S37061\1JEOEC TO-66

02600EF, 02601 OF, 02601EFJEOEC 00-26

REFERENCE POINT

~~~~:~EEr~~~~~E~ANODELEAD

.027-.036 CIA.

<'69j_~09i1 , ~0220-0260(5.5i,~A~·601

GLASSINSULATION <±>

+ 92C5-14457R3

.500

.470

340 (864) l ('~I;O) r 075"'~ ".. 11 pm)'"' ",••~ I",,'"'

l DETAILS OF OUTLINEIN THIS ZONE OPTIONAL

CATHODELEAD

(NOTE Il

.027-.036 OIA.(.69-.91)

210.190

(5033)4.83

.107

.093

(2072)2.36

REFERENCE POINTFOR CASE TEMPER-ATURE MEASUREMENT

"-- 2 MOUNTING HOLES

.152 OIA (3.86).142 . 3.61

1.4 (35.56)MIN.

i.344 -:410(8.74 -10.41),,d

(478) 1.4(35.56)MIN.

Note 1: Connected to metal case.Note 2: Arrow indicates direction of forward (easy) current flow

as indicated by de ammeter.

02600EF, 026010F, 02601EF

CATHODE.CASE

Pin 1: GatePin 2: CathodeCase: Anode

oornLJDSolid StateDivision

02601A02601B026010

02601F02601M02601N

I

/I

J~IIIc,

1-A, 50-to-800-VFast-Recovery Silicon RectifiersGeneral-Purpose Types for Medium-Current ApplicationsFeatures:• Fast reverse-recovery time (trr) -

0.5 J.ls max. (I FM = 20 A peaksee test circuit Fig. 13)0.2 J.lSmax. (I F = 1 A, IRM = 2 A max.,see test circuit Fig. 14)

• Low forward-voltage drop• Low-thermal-resistance hermetic

package

S 50 V ,oov 200 V 400 V 600 V 800 V

Package

00-26 0260' F 0260' A 0260'8 026010 02601M D2601N

- - ITA7892I ITA7893J ITA78941 ITA78951

RCA·D2601·series rectifiers are silicon diffused-junction-types in an axial-lead hermetic package. They differ only intheir voltage ratings.

These devices feature fast recovery times (0.5 J.ls max. from20 A peak) without the "snap" type of turn-off which couldresult in the generation of transients.

Types D2601A, B, D, F, M, and N are intended for use inhigh-speed inverters, choppers, high-frequency rectifiers, "free-wheeling" diode circuits, and other high·frequency applications.

02601F 02601A 026018 026010 02601M 02601NREVERSE VOLTAGE:

REPETITIVE PEAK ............... VRRM 50 '00 200 400 600 800 VNON-REPETITIVE PEAK _ VRSM '00 200 300 500 700 1000 V

FORWARD CURRENT:-Conduction angle = 180°, half·sine-waveRMS . . . . . . . . . . . . . IF(RMS) .. 1.5 • AAverage 10 .. , • A

REAK-SURGE (NON-REPETITIVE)CURRENT:

At junction temperature IT Jl = 150°CFor one-half cycle of applied voltage,

60 Hz (8.3 ms) .. 35 • AFor other durations .. See Fig. 2 •

PEAK (REPETITIVE) CURRENT IFRM .. 6 • ATEMPERATURE RANGE:

Storage. Tstg .. -40 to '65 • °cOperating (Junction) TJ .. 40 to 150 • °c

LEAD TEMPERATURE (Durin9 Solderin9): TLAt a distance of 1/8 in. (3.17 mm) fromcase for 10 s max. .. 225 • °c

• At lead temperature of 100°C (measured at point of anode lead 1/32 in: 10.031 mm) from the case).

LIMITSCHARACTERISTIC SYMBOL ALL TYPES UNITS

MIN. MAX.

Reverse Current:StaticFor VRRM = max. rated value, IF = 0, TJ = 25°C ....... IRM - 15 jlA

TJ = 100°C ...... - 250Dynamic ....................................... See Fig. 9

Instantaneous Forward Voltage Drop:At iF = 4 A, TJ = 25°C (See Fig. 3) . . . . . . . . . . ........ vF - 1.9 V

Reverse Recovery Time:For circuit shown in Fig. 13, at IFM = 20 A,-di F/dt = -20 A/jls, plus duration = 2.8 jlS,TC = 25°C .................................... trr - 0.5 jls

For circuit shown in Fig. 14, at IF = 1 A,IRM = 2 max., TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . - 0.2

Thermal Resistance (Junction·to-Case)- ................. ReJC - 39 °C/W

zo: 2.5

'"'"ffi 2~ll.. 1.5o0:;0: I~"'~O.5

~~ 0

20 40 60 80 laD 120 140 160 180ALLOWABLE LEAD TEMPERATURE(T L} - °c

92CS-17518RI

Fig. 1 - Average forward-power dissipation vs. lead temperature.

2.5 JUNCTION TEMPERATURE (TJ 1=25°C..00:0

"' 2'" /'~5 ./>0>~I~-~.5 MAXIMU~

"-~ -'"::>:il -- -z ,-- ---«

TYPICAL0- -Z --r«to -" 0.5

JUNCTION TEMPERATUHE (TJ ) "150°C

;;;« 60

~I ...I\.J\.-!::'"iso0-", i..,+,-I~~ 8.3ms

O::t- 40'zz"' ""-00:za:: 30 ....•.....-::>",0 .....•.••...•..~~ 20,?,. .........."0: ---~e 10 -.......

0t----

FOR UNIT WITH TYPICAL FORWARDVOLTAGE DROPSWITCHING LOSSES NEGLECTED

CURRENT WAVEFORM

o~IFM

-t,,~j.

92C5-1752'Fig. 4 - Average forward power dissipation as a function of peak

current and duty factor for units with typical forwardvoltage drop.

Fig. 5 - Average forward power dissipation as a function of peakcurrent and duty factor for units with maximum forwardvoltage drop.

FOR UNIT WITH MAXIMUM FORWARDVOLTAGE DROPSWITCHING LOSSES NEGLECTED

-; CURRENT WAVEFORMI nn-1FM

t~O~t~~

Fig. 7 - Average forward power dissipation as a function of peakcurrent and duty factor for units with maximum forwardvoltage drop.

uwor~ 4.5

I-z~ 4.0orGB 3.5

1;~ 3.0

l:lor~ 2.5

or

0.-

ZoI-1i'.'"'"oorw,.1?6or~ I

~w

~~ 0

o

CURRENT WAVEFORM

O~

IFM

;:;'" .. tt~~O',::' .•§ O' ~" o·

<i! 0"

fA o~~ O~

1.5 A (RMS) LIMIT

Fig. 6 - Average forward power dissipation as a function of peakcurrent and duty factor for units with typical forwardvoltage drop.

I REFERENCE POINT FOR

IMEASUREMENT OF LEADTEMPERATURE: 1/8" FROM CASE10.55 PULSE REPETITION RATE = 60

I PULSES Is

>orw§0.40 ~ I

!ffi 0.35~tr 0.30

1'00 PEAK FORWARD CURRE N T {! FM 1= 10 ARECTANGULAR-PULSE DURATION (lpl=30f/.s

I-zWoror=> 10U

>0<~I - r- JUNCTION TEMPERATURE ~

@'>~o u

n,,~~u ww oror "w orffi~1~"~ ~O. I

0' /" I I0.1 I 10 100

RATE OF DESCENT OF FORWARD CURRENT {-dlF/dtl-A/,us

92CS-17527

Fig. 10 - Peak reverse-recovery current vs. rate of descent offorward current.

100 ·RECTANGULAR-PULSE DURATION Upl:: 30,us

JUNCTION TEMPERATURE (TJl :: 150°C

•... I~~ ~~Ia 10 ·l'>- ••~I ~'\~~>= ~°u <;'~ V :.u "'"' <r '" O·<r _ ,..~~v""' <r ~Q~ :;..-

ffi~' ~+~ q~ '/~ ~~

0.1OJ I 10 100

RATE OF DESCENT Of FORWARDCURRENT (-dlF/dt}-A/,us

92CS-17528

10 RECTANGULAR PULSE DURATION (tp)::: 30 J.LS

JUNCTION TEMPERATURE (T J )=150 °C

I 1"' II~lE

"' \'\.~'"

~ '" I ~<:-"'~"(;l '3 c;'~§ ",,~" IA~ V> ~Q/, -°:I..

~ I~/<r~

~O.I 0.1 A

iiO...£..

0.010.1 I 10 100

RATE OF DESCENT OF FORWARD CURRENT(-di.F/df) - A/fLS

92C5-17529

RCAIN3194

ORRCA

012018

AMPLITUDE0-130 v

AC

I RECTIFIERt UNDER TEST

]

50-n OUTPUT "*TO OSCILLOSCOPE •.I WITH RISETIME ~ 0.01 /-,5)

SOINI)R",

ReA O.I(NllD26Q1N

]

TRIGGERSIGNAL TOOSCILLOSCOPE

NOTES:ALL RESISTANCE VALUES ARE IN OHMS.

RM : MONITORING RESISTOR

** UNITS INTERCONNECTED WITH RG - SBU CABLE WITH50-0 TERMINATING RESISTOR AT INPUTTERMINALS OF OSCILLOSCOPE.

50-n OUTPUTTO OSClllOSCOPE"-(WITH RISETIME:s 0.01 ~S)

30 V DC(CONSTANT VOLTAGESUPPLY)

CONSTANTVOLTAGE SUPPLY(ADJUST FOR I A DCTHROUGH RECTIFIERUNDER TEST-APPROX. 30 V 1

UNITS INTERCONNECTED WITH RG-58U CABLE WITH50-n TERMINATING RESISTOR AT INPUTTERMINALS OF OSCILLOSCOPE

RI SELECTED TO GIVE MAXIMUMlRM NO GREATER THAN 2 A(APPROXIMATELY 1.4 nl

R2 I n,IOW NON-INDUCTIVE OR TEN10 n, I W, 1"10 CARBON COMPOSITION RESISTORSCONNECTED IN PARALLEL


POLARITYSYMBOL INSULATION I

LEAD No I LEAD No 2 ~

~'\ ') I .~.l,Jc,JJ .~,:.:JSYMBOL

INCHES MILLIMETERSNOTESMIN. MAX. MIN. MAX0. 0.021 0.039 0.69 0.99

,D 0.220 0.260 5.59 6.60 1

G 0.344 0.410 8.14 10,41 ,L 1,400 - 35.56 -

L, - 0.080 - 2.03 2

NOTES:

1. Package <:ontour optIonal Wllhln cyhndet of diameler •••0

and lenglh G. Slugs. If any. shall be meluded within Ihls

cyhnder bul shall not be subject to the mm,mum hmll 01

oD.2. Lead diameter not controlled m Ih" :lone to allow lor

flash, lead·"nosh build up. and mlllor Irregularitlft olher

than slugs.

OOCDSLJDSolid StateDivision

1-A, 50-to-800-VFast-Recovery Silicon RectifiersGeneral-Purpose Types forMedium-Current Applications

ANODEJEDEC 00-15

Features:• Fast turn-off: 0.5 JlS max. from 3.14-A peak

• Low overshoot current

• Low forward voltage drop

ReA 02201 Series devices are diffused-junction siliconrectifiers in an axial-lead package. These devices, which differonly in their voltage ratings, feature fast recovery times {O.SJlS max. from 3.14 A peak) without the "snap" type of

turn-off which could result in the generation of transients.

The 02201 series are intended for use in high-speed inverters,choppers. high-frequency rectifiers, "free-wheeling" diodecircuits, and other high-frequency applications.

REVERSE VOLTAGE:

REPETITIVE PEAK .

NON-REPETITIVE PEAK

FORWARD CURRENT:*

RMS

AVERAGE:

PEAK SURGE (NON-REPETITIVE):

At junction temperature IT Jl = 150°C

For one-half cycle of applied voltage, 60 Hz (8.3 ms)

For other durations.

50 A

See Fig. 3

6 A

-40 to + 165 °c150 °c

255 °c

PEAK (REPETITIVE).

STORAGE·TEMPERATURE RANGE

OPERATING (JUNCTION) TEMPERATURE

LEAD TEMPERATURE (During Soldering):

Measured 1/8 in. (3.17 mml from case for 10 s max,

CHARACTERISTIC SYMBOL All Types UNITS

Min. Max.

Reverse Current:

Static:For VRRM = max. rated value. IF = O. IRM

TJ = 25°C - 15 /1A

TJ = 100°C - 250 /1A

Instantaneous Forward Voltage Drop:1.9 V

At iF = 4 A. TJ = 25°C See Fig. 4. vF -

Reverse Recovery Time:

For circuit shown in Fig. 1 :

At IFM = 3.14 A. -diF/dt = 10 A//1s. - 0.5 /1Spulse duration = g.4 /1S. TC = 25°C trr

In Tektronix type "S" plug-in unit:

At IF = 20 mA. IR = 1.0 mA1.5

(DC values) TC = 25°C - /1S

Thermal Resistance (Junction-to-Lead)*ROJL 20 °C/W-

See Fig. 14

1/2A ISOLATIONj 25 V TRANSFORMER

117E==J11'~cV117 VAC

50lNIIRMO.ltNI) J

50-0 OUTPUT **TO OSCILLOSCOPE(WITH RISETIME ~ 0.01 /-LS)

JTRIGGERSIGNAL TOOSCILLOSCOPE

NOTESALL RESiSTANCE VALUES ARE IN OHMS

* - ADJUST FOR CURRENT WAVEFORM SHOWN AT LEFT

** UNITS INTERCONNECTED WITH RG -58U CABLE WITH50-n TERMINATING RESISTOR AT INPUTTERMINALS OF OSCILLOSCOPE.

REFERENCE POINTFOR MEASUREMENTOF LEAD TEMPERATURE

~ I--i~ I-i~ HEAT~INK

o20 40 60 80 100 120 140 160 180

ALLOWABLE LEAD TEMPERATURE{T Ll- °C

2.5 JUNCTION TEMPERATURE (TJ)" 25°C..00:0w

2'" ./~0 ./>0>~I3: -1.5 MAXIMU~0: "-0> _I"--'" I::>S ....- 1 ....-z ,- I --.•

TYPICAL -I-Z ---r-~ I~ - I

0.5 I

JUNCTION TEMPERATURE (TJ I :150°C J\..f\..;;; .. 60 Y-rJ>1!:"i 50

83 ms

1-", ~w,,-•..... r-....~;: 40 ........•..'z ..•....•..zw00:

~~ 30 ..•..•~we>~~ 20"''0 ~><0:~~ '00 'r---

8 10 2 8100SURGE - CURRENT DURATION - -CYCLES

92C5- 21658

rJfrlF~0~R~U~N~';T~W~IT~H~T~YP~'C~A~L~F~0~R~W~A~RD1~!ill~~ilVOLTAGE DROP: SWITCHING LOSSES NEGLECTED l L

0.. CURRENT WAVEFORMzo

~'"'"o0:

~

'0 FOR UNIT WITH TYPICAL FORWARDI

VOL TAGE DROP

~ SW' TCHING LOSSES NEGLECTED;;:~ CURRENT WAVEFORMz0 oJlJL IFM

~iii

2 ~ tl~~15 .;:'" '"0: .:::' O· '"~ ~ O·

~ ~'-' "0 4! ,,">0: ,,:I-; I t:0: ~ ,,~0

11 1.5-A{RMSILlMIT


CURRENT WAVEFORM

Onn-1FM-tt~~

100 RECTANGULAR-PULSE DURATION (tpl I< 30 JLsJUNCTION TEMPERATURE tTJ) I< 150·C

>- I~~ 10

~\>I.'>-"" <,,~~ffil>~ f<,~o u ",,~'I' ./ t.U ww", " O·'" :i "'~ ./w'" ~O'l'ffi~1 f<,\>+-~ q~./'"" ~~

0.10.1 I 10 100

RATE OF DESCENT OF FORWARD CURRENT (-dlF/dtl-A/fLs

92CS-17528

350 REFERENCE POINT FOR MEA SUREMENTOF LEAD TEMPERATURE: lIS" FROMCASE, PULSE REPETITION RATE:60

'" 325 PULSES/s

I~300

w~ 275

>- "'.~~.'"w§ 250 -diF Idt:IO A/~s

'" 10"'1. rRMg 225tR~C)

>

o rRM tj'~ 200(RECl-

175I*-- 9.4 ~s - trr

50 75 100 125 150

LEAD TEMPERATURE tTLl-OC

100 PEAK FORWARD CURRENTIIFM):IOARECTANGULAR-PULSE DURATION (tp):3OfLs

>-~~ 10>- ••ffil I--

- JUNCTION TEMPERATURE ~~

>"'"o UU W

W '"17JI<150'C ~

'" :iw'"ffi~1~ /~_50'

'"" ~~. I~0.1 I/' I I

0.1 I 10 100

RATE OF DESCENT OF FORWARD CURRENT {-diF/dti-A/JLs

92CS-17527

10 RECTANGULAR-PULSE DURATION (t pl- 30 fLS

JUNCTION TEMPERATURE (T J )-150·C

~I I.II.~

"" ~ ~ (I.~G

., I::0 -'~~~

~g ",;,'1'§ . ,.,,~" IA

> :L +- ~~ -I-- -I0

~ I f7;/ 1"'~~ ~O.I 0.1

'" -w '"~~

0.01OJ I 10 100

RATE Of DESCENT Of FORWARD CURRENT(-dLf/dt) - A/JLs

92CS-17529



MIN. MAX. MIN. MAX.

OB 0.030 0.034 0.762 0.863 -

00 0.133 0.137 3.378 3.4 79 1

G 0.280 0.285 7.112 7.239 1

L 1.000 - 25.40 - -

L1 - 0.050 - 1.27 2

1. Package contour optIonal wIthin cylmder of d,ameter <PO and length G.Slugs. If any, shall be Included WIthin this cylinder but shall not be subject tothe minimum limIt of ¢O·

2. Lead diameter not controlled ,n thIs lone to allow for flash, lead·flnlshbuild-up. and minor Irregularttles other than slugs.

Cathode*-~~A,CathodeIAnode

6-A, 50-to-600-V,Fast-Recovery Silicon Rectifiers

Features:• Available in reverse-polarity versions: • Low reverse-recovery current

D2406A-R, D2406B-R, D2406C-R, • Low forward-voltage dropD2406D-R, D2406F-R, D2406M-R • Low-thermal-resistance hermetic

• Fast reverse-recovery time (t,,) - package

0.351.1s max. (lFRM = 19 A peak, see test circuit Fig.1)0.2 I.Is max. (I F = 1 A, I RM = 2 A max., see test circuit Fig.2)

ReA D2406 series and D2406-R series are diffused-junction silicon rectifiers in a stud-type hermetic package.These devices differ only in their voltage ratings.

covery characteristics that reduce the generation of R F I andvoltage transients.These devices are intended for use in high-speed inverters,choppers, high-frequency rectifiers, "free·wheeling" diodecircuits, and other high-frequency applications.

02406F 02406A 02406B 02406C 024060 02406M(438791* (43880)* (43881)* (43PS21* 14388:l)* (43884)*02406F·R 02406A-R 02406B-R 02406C-R 024060-R 02406M-R(43879R)* (43880R)* (43881 R)* (43882RI* 143883R)* (43884R)*

REVERSE VOLTAGE:Repetitive peakNon-repetitive peak

FORWARD CURRENT (Conduction angle = 180°,half sine wave):

RMS ITC) = 1000C)-

Average (T C = 100°C I-Peak-surge (non-repetitive):

At junction temperature IT Jl = 150°C:For one-half cycle of applied voltage, 60 Hz (8.3 ms)For other durations

Peak (repetitive) .STORAGE-TEMPERATURE RANGEOPERATING IJUNCTION) TEMPERATURESTUD TORQUE:

RecommendedMaximum 100 NOT EXCEED) .

VRRM 50 100 200 300 400 500 VVRSM 100 200 300 400 600 800 V

IFIRMS) 9 A10 6 A

IFSM

125 . ASee Fig.3

IFRM 25 A-40 to 165 DC

150 DC

15 in-Ib25 in-Ib

LIMITS

CHARACTERISTIC SYMBOL ALL TYPES UNITS

MIN. MAX.

Reverse Current:

SraticFor VRRM "" max. rated value, IF = 0, TC = 2SoC IRM - 15 IlA

TC = lOOoC - 3 mA


At iF 6 A, T J = 25°C vF - 1.4 V


For circuit shown in Fig. 1, at

I FM = 19 A, -di F/dt = 25 Allls,

pulsed duration = 2.25 IlS, T C = 25°C trr - 0.35 IlSFor circuit shown in Fig. 2, at

IFM = 1 A, IRM = 2 A max., T C = 25°C. - 0.2

Thermal Resistance (Junction-ta-Case) ROJC - 3 °C/W

fT1'25 v 1

RCAIN3194

ORRCA

012018

o 5 ~H1t

[lRECTIFIERt UNDER TEST

0471'-FAMPLlTur)[

0-130 vAC

JTRIGGERSIGNAL TOOSCIllOSCOPE

* - ADJUST FOR CURRENT WAVEFORM ShOWN AT l l f ,

If* UNITS INTERCONNECTEO WITH RG -5BU CABLE WITHsoon TERMINATING RESISTOR AT INPUTTERMINALS OF OSCILLOSCOPE


50-n OUTPUTTO OSCILLOSCOPE*(WITH RISETIME~ 0.01 ,.S)

CONSTANTVOLTAGE SUPPLY(ADJUST fOR I A DCTHROUGH RECTIFIERUNDER TEST-APPROX. 30 v)

• UNITS INTERCONNECTED WITH RG-58U CABLE WITH50-n TERMINATING RESISTOR AT INPUTTERMINALS OF OSCILLOSCOPE

RI: SELECTED TO GIVE MAXIMUMIRM NO GREATER THAN 2 A(APPROXIMATELY 1.4 fi)

R2: I a,IOW NON-INDUCTIVE OR TEN10 n, I W,I". CARBON COMPOSITION RESISTORSCONNECTED IN PARALLEL

JUNCTION TEMPERATURE (TJ) =r~)O°C J\J\..150 yt

;;; ..• 8.3ms

~ I 125>---::IE>-., \"''''~!::!100"'>- "oz "-z",0'" 75z'"-::> .....•."'U •............

~~50.,~ r--r-"'" -~~25

9ZCS-ZZZ3Z

Fig.3 - Peak surge (non*repetitille) forwardcurrent 115.surge-.eurrent duration.

1000 JUNCTION TEMPERATURE (TJ)=25°C6..•4I

:; 2->- 100.z'" 6~ 4

/'

a TYPICAL/ / MAXIMUM0 2

'/'" 10~(?

4 I., II::> 22 'Iz I..• •>-z 6 I,~ 4

" 2 II0.1 II

o r 2 3 4INSTANTANEOUS FORWARD VOLTAGE DROP (vF)-V

9ZCS-ZZZ33

~....!...

~..!!o..zQI-~~ 10a:

~


CURRENT WAVEFORM

O~IFM

~It~-!

9-A (RMS)LIMIT

~

20 30 40 50 60PEAK FORWARD CURRENT (IFM) - A 92C5-22234

Fig.5 - Average forward power dissipationas a function of peak current andduty factor for units with typicalforward voltage drop.

FOR UNIT WITH TYPICAL FORWARD CURRENT WAVEFORMVOLTAGE DROP rI r-,-IFt~SWITCHING lOSSES NEGLECTED 0 J L.J L

I, I-IZ

..a:

§..'"..I-.."'uc.~1'30~t!!c-~g...JC

'"::>'"xc'"

,:\.09':J~",\l''t

~C~OQ\)-0

10 20 30 40 50 60PEAK FORWARD CURRENT (IFM) - A 92CS-22236

Fig. 7 - A versge forward power dissipationasa function of peak current andduty factor for units with typicalforward voltage drop.


92CS·22238

Fig.9 - Maximum allowable case temperatureas a function of peak current andduty factor for units with typicalforward voltage drop.


9-A CRMS)11011

9~

~I

>~ 15

..!!o..zo

~~ 10o'"~

20 30 40 50 60PEAK FORWARD CURRENT (IFM) - A

Fig.6 - Average forward power dissipationas a function of peak current andduty factor for units with maximumforward voltage drop.

FOR UNIT WITH MAXIMUM FORWARD CURRENT WAVEFORMVOLTAGE DROP r"1 ri - IFMSWITCHING LOSSES NEGLECTED 0 J L....J L

- 6 II ~

60/1) 12

0"o' "?it'

o:..ry

..a:::>~~'"..I-"u"'.~ 1130~.?<D_

~c

'"::>'"xc'"

0':- 9-A (RMS)LIMIT

0"::-.~o·\••.\l"'~

~~c"'\o~Q\)"'\ •••. "

20 30 40 50 60PEAK FORWARD CURRENT (IFM)-A

Fig.8 - Average forward pO'Ner dissipationas a function of peak current andduty factor for units with maximumforward voliage drop.

FOR UNIT WITH MAXIMUM FORWARD CURRENT WAVEFORM

~~~;~~I~G D~SES NEGLECTED o~IFM

~It~-!

'32CS·22239

Fig. to - Maximum allowable case temperatureas a function of peak current and dutyfactor for units with maximum forwardvoltage drop.

n ~nc..~I-

"'0~·Iw-- 130-',?~-'"j«

'"=>'"x«'"

92CS-22240

Fig. 11 - MaxImum allowable case temperatureas a function of peak current andduty factor for units with typ;calforward voltage drop.

4-,-,"",.,OFOC

~ MICA INSULATOR

~ :::~:~::;,~:llS>1EO

G HEAT SINK{CHASSIS}

6 DF3DTEFLON" INSULATING BUSHING0.0."' 0.275 ,no 16.99mm) MAX.

t:::=== THICKNESS-0.055 'I'.

~

(I.40mmIMAX.-.Y""l.-.BlEATPU8L'S"EO>1"'ROWAREPR'CES

NR59B f"O\--- ~~~INSULATOR

CONNECTOR ~o - "'YA'lABlE.-.TI'UIl'S>1EO'-'V.'lAIU A' I'UIllS ••EO HARDWAREPfI'CUH"RD'IO"AREPfI'CU 0

@ ~:~~~CK WASHER} ::;:l'tO~ NA38C OEv,n

~ HEX.NUT


92C5- 22241

F;g.12 - Maximum allowable case temperatureasa function of peak current andduty factor for units with maximumforward voltage drop.

INCHES MILLIMETERSSYMBOL MIN MAX. MIN. MAX. NOTES

A - 0.405 - 10.28

b - 0.250 - 6.35 2, 0.020 0.065 0.51 1.65,0 - 0.505 - 12.82,0, 0.265 0.424 6.74 10.76

E 0.423 0.438 10.75 11.12

F, 0.075 0.175 1.91 4.44 ,J 0.600 0.800 15.24 20.32,M 0.163 0.189 41' 4.80

N 0.422 0453 10.72 11.50

N, - 0.078 - 1.98

oT 0060 0095 1.53 2.41

OW 1D-32UNF-2A 10·32 UNF'2A 32 - I 0002 - I 0.050

" - 0.006 - 0.152

NOTES'

1: Chamfer or unde,eul on one Orboth "des 01 huaganal base "optional

2: Angular orientation and contour of Terminal NO.1 is optional.3: (>Wis pitch diameter of coatl:!dIhreads. REF: $(:rew Thread

Standards lor Federal SerYlces.Handbook H 28 Part 1RKommended torque: 15 onch·pounds.

Forward Polarity

(D2406 Series)

No.1 (Lug) - AnodeNo.2 (Stud) - Cathode

Reverse Polarity

(D2406-R Series)

No.1 (Lug) - CathodeNO.2 (Stud) - Anode

When Incorporatmg ReA Solid State DeVices In equipment, It IS

recommended that the deSigner refer to "Operating Considerations for

RCA Solid State DeVices", Form No.1 CE-402, available on request

from RCA Solid State DIVISion, Box 3200, Somerville. N.J. 08876.

[ID(]5LJ[JSolid StateDivision

1N3879-1N38831N3879R-1N3883R

Forward-polarity Reverse-polarity

1

11N3879·1N3883) 11N3879R·l N3883R)

JEDEC DO-4

H·1167

6-A, 50-to-400-V,Fast-Recovery Silicon RectifiersGeneral-Purpose Types for High-Current Applications

Features:• Available in reverse·polarity versions: - Low reverse-recovery current

1N3879R, 1N3880R, 1N3881 R, • Low forward·voltage drop1N3882R, 1N3883R • Low-thermal.resistance hermetic

• Fast reverse-recovery time (trr) - package200 ns max. (I F = 1 A, IRM = 2 A max., seetest circuit Fig. 2)

For data on other RCA fast recovery rectifiers, refer to the following RCAdata bulletins: 6.A File No. 663 (02406 Series)

12·A File No. 664 (02412 Series)20·A File No. 665 (02520 Series)40-A File No. 580 (02540 Series)

RCA types 1N3879 - 1N3883 and 1N3879R - 1N3883R arediffused·junction silicon rectifiers in a stud-type hermeticpackage. These devices differ only in their voltage ratings.

REVERSE VOLTAGE:*Repetitive peak

Non-repetitIve peak

*DC{Blockingl "0'.

FORWARD CURRENT (Conduction angle"" 180 .half sine wave):

RMS (TC = 100oC)&* Average (TC - 100oCl4

• Peak-surge (non-repetitive): 0

At Junction temperature (T Jl =< 150 C-For one cycle of applied voltage. 60 HzFor ten cycles of applied voltage, 60 Hz

Peak (repetitive)

'STORAGE-TEMPERATURE RANGE'OPERATING IJUNCTION) TEMPERATURESTUD TORQUE:

*Recommended

Maximum (DO NOT EXCEED) .

All types feature fast reverse·recovery time of 200 ns max.These devices are intended for use in high-speed inverters,choppers, high·frequency rectifiers, "free·wheel ing" diodecircuits, and other high-frequency applications

50 100 200 300 400 V75 200 300 400 500 V50 100 200 300 400 V

9 A6 A

75 A35 A25 A

-65 to 175 °c-65 to 150 °c

15 in-Ib25 in-Ib

*In accordance wIth JEDEC regIstration data.

·Case temperature IS measured at center of any flat surface on the hexagonal head of the mounting stud.

LIMITS

CHARACTERISTIC SYMBOL All TYPES UNITS

MIN. MAX.

Reverse Current:

StaticFor VRRM = max. rated value, IF = 0, TC = 25°C ................ IRM - 15 /lA

TC=100°C ........... - ... - 1 mA

DynamicFor single phase full cycle avera911, 10 = 6 A, TC=100°C .......... IR(AV) - 3 mA


At iF = 6 A, VRRM = rated value, TJ = 100°C . . . . . . . . . . . . . . . . . . VF(PK) - 1.5 V

At iF = 6 A, TJ = 25°C .................................... vF - 1.4 V

Reverse Recovery Time:For circuit shown in Fig. 2, at

IFM = 1 A, IRM = 2 A max., TC= 25°C ..................... trr - 200 ns

Thermal Resistance (Junction-to-Case) .......................... ReJC - 2.5 °C/W

50-a OUTPUT TOOSCillOSCOPE·"

{WITH RISETIME:50.0IjOSl

CONSTANTVOLTAGE SUPPLYI ADJUST FOR I A DCTHROUGH RECTIFIERUNDER TEST-APPROX '0 V I

•••• UNITS INTERCONNECTED WITH RG-58U CABLE WITH50-a TERMINATING RESISTOR AT INPUTTERMINALS OF OSCillOSCOPE

I~RI SELECTED rOGlvE MA)(IMUMlRM NO GREATER THAN 2 A

(APPROXIMATELY 14 nl

IF '" R2 I D lOW NON-INDUCTIVE OR TENo 10 n, I W 1"1. CARB0f'l COMPOSITION RESISTORS

CONNECTED IN PARALLEL

IRM-I.

Fig. 2 - Test circuit (pulsed de) for measurement of

reverse-recovery time.

~ NR109. }~ STAALOCK WASHER SUI'I'LIE.'

~ NA38C OEV'CE

~ HEX. NUT


DIMENSIONAL OUTLINEJEDEC 00·4

INCHES MILLIMETERSSYMBOL MIN. MAX. MIN. MAX. NOTES. - 0.405 - 10.28

b - 0.250 - 6.350.020 0.065 0.51 '.66

00 - 0.505 - 12.8200, 0.265 0.424 6.74 10.76

E 0.423 0.438 10.75 11.12

" 0.075 0.175 1.!Jl '.44J 0.600 0.800 15.24 20.32OM 0.163 0.189 4.15 '.80N 0.422 0.453 10.12 11.50

N, - 0.078 - '.98.T 0.060 0.095 '.53 2.41.w 10-32 UNF·2A '''3'["'.''

,, - - r 0.002 - 0.050

" - 0.006 - 0.152

NOTE:

1: oW is pitch diameter of coated th,..;!s. REF: Screw ThreedStandards for Federal SeniC8$. Handbook H 28 P.rt l.Recommended torque: 15 inch-pounds.

Forward Polarity(lN3879 - 1N3883)

No. 1 (Lug) - AnodeNo.2 (Stud) - Cathode

Reverse Polarity(l N3879RI - 1N3883R)

No.1 (Lug) - CathodeNo.2 (Stud) - Anode

OOCTI5LJDSolid StateDivision 02412 Series

02412-R Series

fO~,A *Cathode I

Anode

12-A, 50-to-600-V,Fast-Recovery Silicon Rectifiers

• Available in reverse-polarity versions: - Low reverse-recovery current02412A-R, 02412B-R, 02412C-R, • low forward-voltage drop024120-R, 02412F-R, !J2412M-R • low-thermal-resistance hermetic

• Fast reverse-recovery time (trr) - package

0.35 IlS max. (lFRM = 38 A peak, see test circuit Fig.1)0.2 IlS max. (I F = 1 A, I RM = 2 A max., see test circuit Fig.2)

RCA 02412 series and D2412-R series are diffused·junctionsilicon rectifiers in a stud·type hermetic package. Thesedevices differ only in their voltage ratings.

covery characteristics that reduce the generation of R F I andvoltage transients.These devices are intended for use in high-speed inverters,choppers, high-frequency rectifiers, "free-wheeling" diodecircuits, and other high-frequency applications.

02412F 02412A 02412B 02412C 024120 02412M(43889'* (43890)* (43891)* (43892'* (43893)* (43894)*02412F-R 02412A·R 02412B-R 02412C-R 024120-R 02412M-R(43889R)* (43890R)* (43891R'* (43892R)* (43893R)* (43894R)*

REVERSE VOLTAGE:Repetitive peakNon-repetitive peak

FORWARD CURRENT (Conduction angle = 1800,

half sine wave):RMS (TC· 100°C)·

Average (TC • 1000C)-Peak-surge (non-repetitive):

At j'.mction temperature (T J) = 150°C:For one-half cycle of applied voltage, 60 Hz 18.3 mslFor other durations

Peak (repetitive) .STORAGE~EMPERATURERANGEOPERATING (JUNCTION) TEMPERATURESTUD TORQUE:

RecommendedMaximum (DO NOT EXCEED) .

VRRM 50 100 200 300 400 600 VVRSM 100 200 300 400 600 800 V

IF(RMS) 18 A10 12 A

IFSM

250 ASee Fig.3

IFRM 50 A-40 to 165 °c

150 °c

15 in-Ib25 in·lb

* Number in parentheses is a former ReA type number .

• Case temperature is measured at center of any flat surface on the hexagonal head of the mounting stud.

LIMITS


MIN. MAX.

Reverse Current:

Static

For VRRM ""max. rated value, IF = 0, TC = 2SoC IRM - 100 ~A

TC: 100°C - 4 mA


AliF: 12 A. TJ:250C. vF - 1.4 V



IFM : 38 A. -di F/dl : 25 A/~s.

pulse duration = 4.5 J.ls,-T C :: 25°C Irr - 0.35 ~sFor circuit shown in Fig. 2, at

IFM: 1 A.IRM:2 Amax .. TC:250C. - 0.2

Thermal Resistance (Junction-to-Case) ReJC - 1.5 °C/W

2.25 ftH1t

ReA [lIN3194OR RECTIFIER

0'20' B !UNDER TEST

AMPLITUDE0-130 V 1.33 ~F

AC 5O(NI)R",O.I(NII

]

50·0 OUTPUTTO OSCILLOSCOPE **(WITH RISETIME ~ 0.01 fJ-S)




* - ADJUST FOR CURRENT WAVEFORM SHOWN AT lEFT

** UNITS INTERCONNECTED WITH RG -58U CABLE WITH50-a TERMINATING RESISTOR AT INPUTTERMINALS OF OSCILLOSCOPE.

IASLOWBLOW

30 V DC(CONSTANT VOLTAGESUPPLY 1

50-n OUTPUTTO OSCILLOSCOPE'"(WITH RiSETIME:::: 0,01 ,...S)

CONSTANTVOLTAGE SUPPLY(ADJUST FOR I A DCTHROUGH RECTIFIERUNDER TEST-APPRQX 30 v)

* UNITS INTERCONNECTED WITH RG-5BU CABLE WITH50-fi TERMINATING RESISTOR AT INPUTTERMINALS OF OSCILLOSCOPE

RI; SELECTED TO GIVE MAXIMUMlRM NO GREATER THAN 2 A(APPROXIMATELY 14 Ol

R2: I n,IQW NON-INDUCTIVE OR TEN10 n, I W,I% CARBON COMPOSITION RESISTORSCONNECTED IN PARALLEL

300 JUNCTION TEMPERATURElTJ);1500C

J\....f'L

'""250 YT

~l \ 8.3ms

>='"~S200

\i:!-,>-ZZ0'"~~ /50

~",=>Ii!~ .•..•...•..=><r~; 100 --,,<r I---"'0a."- I----

50 r-+-

0 , 4 6 8

cxIOOO: JUNCTION TEMPERATURE (TJ); 25°C

I 4~>- '~ 1008i:' 6;:: 4~ ,! lOa~ 6'" 4=>~z">-Z

~~

IV1/

o I 2 .3 4INSTANTANEOUS FORWARD VOLTAGE DROP (vFI- v

92CS-22261


CURRENT WAVEFORM

o f\........J\.. I F M

~I,~-!

92CS -22269

Fig.5 - Average forward pOlNerdissipationasa function of peak current andduty factor for units with typicalforward voltage drop.


CURRENT WAVEFORM0.rr.n-1FM'I I-

'2

92CS-22270

Fig.? - Average forward power dissipationasa function of peak current andduty factor for units with typicalforward voltage drop.

~ 150I

~ 145

'"'"i:'~ 140

~ 135

'"~ FOR UNIT WITH

~ 130 ~J~~~~iFg:O~ARD060 SWITCHING LOSSES« NEGLECTED

~ 125a CURRENT WAVEFORM

~ 120 0 f\........J\.. I FM

~ ~ 'II- I~ 115 ~t2-1

o 10 W 30 40 ~ roPEAK FORWARD CURRENT (I FM) - A

92CS-22272Fig.9 - Maximum allowable case temperature

asa function of peak current andduty factor for units with typicalforward voltage drop.


CURRENT WAVEFORMo f\........J\..I FM~I,~-!

92CS -22268

Fig.6 - Average forward polNer dissipationas a function of peak current andduty factor for units with maximumforward voltage drop.


CURRENT WAVEFORM0.rr.n-1FM~,~~

92CS-22271

Fig.8 - Average forward polNer dissipationas a function of peak current andduty factor for units with maximumforward voltage drop.

~~150

~!oil~:>~ 130

'"'"..<.> 120

~~ 110;;!.

:>i 100

i92CS-22273

Fig. 10 - Maximum allowable case temperatureas a function of peak current and dutyfactor for units with maximum forwardvoltage drop.

Fig. 11 - Maximum allowable case temperatureasa function of peak current andduty factor for units with typicalforward voltage drop.

t-".,""",DF6C

~ MICAINSULATOA

~ :::~:~::;,~~:L1SHEO

C0:HEATSINK(CHASSISJ

6 OF30

~~~.L~~,;~~~n~~:;~NmG.m~~:~~G<:===== THICKNESS-O.OSSin

~

(1.40mmIMAxAYAILAOL{ATPU8LISHEOHAROWAREPHICES

NR59B ~ ~i~INSULATORCONNECTOR~ -AVAlLAeLEATI'U8L1SHEO

AVAILA8LEAT PU8LISHEO HAADwAREPRICESH"ROW"REOOA'CES 0

® ~:~~~CK WASHER} 5UI'!'LIE."

~ NA38C OEYICE

~ HEX.NUT


'5!<140

~:>~ 130

"'~..~ 120<Xl

~o 110j..~ 10:>x..:>

Fig. 12 - Maximum allowable casetemperatureasa function of peak current andduty factor for units with maximumforward voltage drop_


INCHES MILLIMETERSSYMBOL MIN. MAX. ;.1IN. MAX NOTES

A - 0.405 - 1028

b - 0.250 - 635 20.020 0.065 0.51 1.65

vo - 0505 - 12.82

00, 0.265 0.424 6.74 10.76

E 0.423 0.438 10.75 11.12

F, 0.075 0.175 1.91 4.44 ,J 0.600 0.800 15.24 2.1.32

oM 0163 0.189 4.15 '80N 0.422 0.453 10.72 1150N, - 0.078 - 1.98

oT 0060 0.095 '.53 2.41

oW '0 32 INF.2A '0·32 iNF.2A 32 - 0.002 - 0.050

" - 0.006 - 0.152

1: Chamfer or unden;:ut on one or both sIdes of hellagonal base ISophonal.

2: Angular or,en~t1on and contour 01 Terminal No.1 IS optional.

3: ~::;~:~O~'~=:lo~:~~;~~~E~~~:;lTreadRecommended torque: 15 Inch·pounds.

Forward PolarityID2412 Series)


Reverse Polarity,(D2412-R Seriesl


OO(]3LJI]Solid StateDivision 1N3889-1N3893

1N3889R-1N3893R

12-A" 50-to-400-V,Fast-Recovery Silicon RectifiersGeneral-Purpose Types for High-CoJrrent Applications

Features:• Low re,,~rse·recovery current• low forward-voltage drop• low-thermal-resistance hermetic

• Fast reverse-recovery time (trr) - package200 ns max. (I F = 1 A, IRM = 2 A max., seetest circuit Fig. 2)

• Available in reverse-polarity versions:1N3889R, 1N3890R, 1N3891R,1N3892R, 1N3893R

For data on other RCA fast recovery rectifiers, refer to the following RCAdata bulletins: 6-A File No. 663 (02406 Series)

12-A File No. 664 (02412 Series)20-A File No. 665 (02520 Series)40-A File No. 580 (02540 Series)

ReA types 1N3889 - 1N3893 and 1N3889R - 1N3893R arediffused·junction silicon rectifiers in a stud·type hermeticpackage. These devices differ only in their voltage ratings.

All types feature fast reverse-recovery time of 200 ns max.These devices are intended for use in high-speed inverterschoppers, high-frequency rectifiers, "free-wheel ing" diodecircuits, and other high-frequency applications

MAXIMUM RATINGS. Absolure-Maximum Values:

REVERSE VOLTAGE:·Repetitive peak

Non-repetitive peak·OC (Blocking) . . . .. . . 0.

FORWARD CURRENT (Conduction angle =' 180 .half sine wave):RMS IT C = 100oCI"

• Average (TC = 100°C)·• Peak-surge(non-repetitive):

At junction temperature IT J} = 150°C:For one cycle of applied voltage, 60 HzFor ten cycles of applied voltage. 60 Hz

Peak (repetitive)'STORAGE-TEMPERATURE RANGE .'OPERATING IJUNCTIONI TEMPERATURESTUD TORQUE:

• Recommended .MaXimum (DO NOT EXCEED)

50 100 200 300 400 V75 200 300 400 500 V50 100 200 300 400 V

18 A12 A

150 A70 A50 A

-65 to 175 °c-65 to 150 °c

15 in-Ib25 in-Ib

*In accordance with JEDEC registration data.

·Case temperature IS measured at center of any flat surface on the hexagonal head of the mounting stud.

LIMITS


MIN. MAX.

Reverse Current:

StaticFor V R RM = max. rated value, IF = 0, T C = 25°C . . . . . . . ......... IRM - 25 IlA

TC = 100°C ............... - 3 mA

DynamicFor single phase full cycle average, 10 = 12 A, T C = 100°C .......... IR(AV) - 5 mA


At iF = 12 A, VRRM = rated value, TJ = 100°C ......... ....... - VF(PK) - 1.5 V

At iF = 12 A, TJ = 25°C .......... .... . . . . . . . . . . . . . . . . . . . . . vF - 1.4 V


IFM = 1 A, IRM = 2 A max., TC = 25°C .. . ., . .. . . ...... . . trr - 200 ns

Thermal Resistance (Junction-to-Case) ........................ ReJC - 1.5 °C/W

!lO-n OUTPUT TOOSCillOSCOPE ••.•

tWITH RISET1MESOQljoS)

CONSTANTVOLTAGE SUPPLY(ADJUST fOR I A DCTHROUGH RECTIFIERUNDER TEST-APPRQX 30 V)

•• UNITS INTERCONNECTED WITH RG-58U CABLE WITH50-n TERMINATING RESISTOR AT INPUTTERMINALS OF OSCillOSCOPE

'~RI SELECTED rOGlvE MAXIMUMlRM NO GREATER THAN 2 A

(APPROlCIMATElY 14 nl

IF Ir• R2 I n,IOW NON-INDUCTIVE OR TENo 10 n, I 'N,''I'. CARBON COMPOSITION RESISTORS

CONNECTEO IN PARALLEL

92c •••·ZZI1'JR'

. IRM-I,OSCILLOSCOPE OISPLAY OF REVERSE-RECOVERY TIME

t--,,"'""'"OFOC

~MICAINSUlATOR~ :::~:~:;;,~~:L1SHfO

UHE.TSINK(CHASSISl

6 OFJD

~~~.L?~.;;~~n~~:'~~:m~~s:~~G"=====~. THICKNESS "O.05Sm.

(1.40mm) MAX",V••'l"8U",TPUBllSHEOH •••ROW .••.REPAIl;es

NR59B ~ ~~;~ INSULATORCONNECTOR ~ - ••1I ••. ,L .••.8LE .•.TPU8LISHEO

.•.VA'LA8LEATPU8LISHEO HAROWAREPRlces

HAAOWAREPRICES 0

~ NR'og. }~ STAALOCK WASHER SUPPLIED

~ NA38C DEI/ICE.

~ HEX.NUT

In the United Kingdom, Europe, MIddle East, and Africa, mounting-hardware policies may differ; check the availability of all itemsshown with your ReA sales representative or supplier.


INCHES MILLIMETERSSYMBOL MIN. MAX. MIN. MAX. NOTES

• - 0.405 - 10.28b - 0.250 - 6.35

0.020 0.065 0.51 1.65.0 - 0.505 - 12.82.0, 0.265 0.424 6.74 10.76E 0.423 0.438 10.75 11.12F, 0.075 0.175 1.91 4.4,

J 0.600 0.800 15.24 20.32.M 0.163 0.189 4.15 4.80N 0.422 0.453 10.72 11.50N, - 0.078 - 1.98.T 0.060 0.095 '.53 2.41.w 11>32iNF.,. '032 iNF-,. ,2 - 0.002 - 0.0502, - 0.006 - 0.152

NOTE:

1: oW's pitch diameter of COlitedthr••• s. AE F: Screw Thr*St••.•d.rds for Federal Services, H.ndbook H 28 Pac'tI.Recommended tOf"que: 15 inch-pound$.

Forward Polarity(1 N3889 - 1N3893)


Reverse Polarity(1 N3889R - 1N3893R)


u~~~u ~enesD2520-R Series

20-A, 50-to-600-V,Fast-Recovery Silicon Rectifiers* G,n",'~Pu,po" Typ" to' High~Cun'ntAppli"tion,

Features:• Available in reverse-polarity versions: - Low reverse-recovery current

D2520A-R, D2520B-R, D2520C-R, • Low forward-voltage dropD2520D-R, D2520F-R, D2520M-R • Low-thermal-resistance hermetic


0.35 /1S max. (I FRM = 63 A peak, see test circuit Fig.1)0.2/1s max. (I RM = 1 A, I RM = 2 A max., see test circuit Fig.2)

covery characteristics that reduce the generation of R F I andvoltage transients.These devices are intended for use in high-speed inverters,choppers, high-frequency rectifiers, "free-wheel ing" diodecircuits, and other high·frequency applications.

RCA D2520 series and D2520·R series are diffused-junctionsilicon rectifiers in a stud-type hermetic package. Thesedevices differ only in their voltage ratings.

D2520F D2520A D2520B D2520C D2520D D2520M(43899)* (43900'* (349011* (43902'* (43903'* (43904)*D2520F·R D2520A·R D2520B·R D2520C·R D2520D·R D2520M-R(43899RI* (43900R'* (43901 R)* (43902R'* (43903RI* (43904R'*

REVERSE VOL TAGE,Repetitive peak

Non-repetitive peakFORWARD CURRENT (Conduction angle = 180°,

half sine wave):RMS ITC " 1000c)e

Average IT C " 1000CIePeak-surge (non-repetitive):

At junction temperature (T Jl = 150°C:For one-half cycle of applied voltage, 60 Hz (8.3 ms)For other durations

Peak (repetitive)STORAGE·TEMPERATURE RANGEOPERATING IJUNCTION) TEMPERATURESTUD TORQUE,

RecommendedMaximum 100 NOT EXCEED)

VRRM 50 100 200 100 400 600 VVRSM 100 200 300 400 600 800 V

IFIRMS) 30 A10 20 A

IFSM

300 ASee Fig.3

IFRM 100 A-40 to 165 °c

150 °c

30 in-lb50 in-Ib

LIMITS


MIN. MAX.

Reverse Current:

Static

For VRRM == max. rated value, IF = 0, TC == 25°C IRM - 0.05 ~A

TC = lOOoC - 6 mA


At iF = 20 A, TJ = 25°C. vF - 1.4 V



IFM = 63 A, -diF/dt = 25 A/~s,

pulse duration = 7.5 ~s, TC = 25°C t"- 0.35 ~s


I FM = 1 A, IRM = 2 A max., T C = 25°C. - 0.2

Thermal Resistance (Junction-ta-Case) ROJC - 1 °C/W

RCAIN3194

ORRCA

012018

AMPLITUDE0-130 V

AC

~ RECTIFIERt UNDER TEST

501NI}RMO.IINll J

50-a OUTPUT *TO OSCILLOSCOPE '*(WITH RISETIME :S 0.01 fLS)




'* - ADJUST FOR CURRENT WAVEFORM SHOWN AT LEFT

** UNITS INTERCONNECTED WITH RG - 58U CABLE WITH50-0 TERMINATING RESISTOR AT INPUTTERMINALS OF OSCilLOSCOPE.


IR

OSCILLOSCOPE DISPLAY OF REVERSE-RECOVERY TIME

50-a OUTPUTTO OSCILLOSCOPE**(WITH RiSETIME:SO.OI ~S)

CONSTANTVOLTAGE SUPPLY(ADJUST FOR I A DCTHROUGH RECTIFIERUNDER TEST -APPROX. 30 V)

UNITS INTERCONNECTED WITH RG-58U CABLE WITH50-a TERMINATING RESISTOR AT INPUTTERM I NALS OF OSCILLOSCOPE

RI SELECTED TO GIVE MAXIMUMIRM NO GREATER THAN Z A(APPROXIMATELY 1.4 n)

R2 In, 10 W NON-I NDUCTIVE OR TEN10 n, I W, 1% CARBON COMPOSITION RESISTORSCONNECTED IN PARALLEL

350 JUNCTION TEMPERATURE (TJ): 150°C

300.J\..f\..

;;;.. \W

~12508.3ms

~~ \1:; •.•Cf;: 200ZZ "-owz'" •......~~ 150"'u~~ --~:t 100

"'"wo.."-50

02 4 6 • 2 4 6 •

1000 JUNCTION TEMPERATURE {TJ )=25·C

"6

I 4 I I:u. 2 10--..••••••••- TyPiCAL •••••• MAXIMUMI- 100i:'i •'"

6

'" 4

/132

0 '/'" 10"~ •6Ii' 4

'" 2=>

~ I

" •I- 6Z 4" I:;;

2;;,: III0.1o I 2 3 4

INSTANTANEOUS FORWARD VOLTAGE DROP {vF)-V92C5-22181

FigA - Forward current vs. forwardvoltage drop.

~I

!30..~zQ 25~jjli5 20a:

~ 15


URRENT WAVEFORM

O~IFM

-t't~j

40 60 80 100 120 140 160 180PEAK FORWARD CURRENT (I FM) - A

92CS-22182Fig.5 - Average forward power dissipation

as a function of peak current andduty factor for units with typicalforward voltage drop.

FOR UNIT WITH TYPICAL FORWAR~ VOLTAGE DROPi 60 SWITCHING LOSSES NEGLECTED

cEz°50~jjla 40a:

~ 3

30-A IRMS)LIMIT

20 40 60 80 tOO 120 140 160 180PEAK FORWARD CURRENT (IFM)-A

92C5-22184

Fig. 7 - Average forward PO'rNefdissipationas a function of peak current andduty factor for units with typicalforward voltage drop.

fOR UNIT WITH TYPICAL FORWARDVOLTAGE DROPSWITCHING LOSSES NEGLECTED

DUn_ F"~C7i0" (

"/12)"'0.0,5

125

CURRENT WAVEFORM

120~

-1" I- I115 ~t-1

o w ~ 60 00 100 120PEAK FORWARD CURRENT (IFM) - A

92CS- 22186

Fig.9 - Maximum allowable case temperatureas a function of peak current andduty factor for units with typicalforward voltage drop.

~I

~30

~~ 25

~inu> 20<;a:

~ 15

CURRENT WAVEFORM

O~IFM

-t'.~-l30-A(RMS)

o~t:J LIMIT

o~


40 60 80 100 120 140 160 180

PEAK FORWARD CURRENT (IFM) - A

92CS-22183-

Fig.6 - Average forward power dissipationas a function of peak current andduty factor for units with maximumforward voltage drop_

f ~~~T~~~ W~~~pMAXIMUM FORWARD CURRENT WAVEFORM

~ 60 SWITCHING LOSSES NEGLECTED onn- IFM

i50 ~.~~

in'" .oa:

~..

92CS-221~5Fig.8 - Average forward power dissipation

as a function of peak current andduty factor for units with maximumforward voltage drop.

lr( FOR UNIT WITH MAXIMUM FORWARD~ VOLTAGE DROP~ 150 SWITCHING LOSSES NEGLECTED

i:!«~ 140

~; 130

;'lw 120Oil

~gilDoJ«

'":> 100

'"x«'"

9ZCS-22187

Fig. to - Maximum allowable case temperatureas a function of peak current and dutyfactor for units with maximum forwardvoltage drop.

!;'

~'"<r

"<{

~~....'"'";3'"-'m

~j tlO

<{

:>=> 100:>X<{

:> 90o

CURRENT WAVEFORM

Orrn-1FM--h f-- I

'2 -I0.05

20 40 60 80 100 120 140 160 180PEAK FORWARD CURRENT (In.1)-A

92CS-22188

Fig.1T - Maximum allowable case temperatureas a function of peak current andduty factor for units with typicalforward voltage drop.

In the United Kingdom, Europe, Middle East, and Africa, mounting-hardware policies may differ; check the availability of all Itemsshown with your ReA sales representative or supplier.

!;'

~'"~~~....'"'"<{<.>

'"cr:<{,.~

110

:>100=>:>

X<{

900

CURRENT WAVEFORM

orrn-1FM~,~~

92CS-22189

Fig. 12 - Maximum allowable case temperatureas a function of peak current andduty factor for units with maximumforward voltage drop.


INCHES MilLIMETERSSYMBOL MIN. MAX. MIN. MAX. NOTES

A - 0.450 - '1.43

b - 0.375 - 9.52 2c 0.030 0.080 0.77 2.03

"D - 0.794 - 20.16

oD, - 0.667 - 16.94

E 0.669 0.688 17.00 17.47

F, 0.115 0.200 2.93 5.08 ,J 0.750 1.000 19.05 25.40

OM 0.220 0.249 5.59 6.32

N 0.422 0.453 10.72 11.50

N, - 0.090 - 2.28S 0.156 - 3.97 -oT 0.140 0.175 3.56 4.44

OW 1/4-28 UNF 2A 1/4-28 UNF 2A 3, - I 0.002 - I0.050

" - 0.006 - 0.152

NOTES:1: Chamfer or undercut on one or both Sides of hexagonal base is

optional2: Angular orientation and contour of Terminal No.1 is optional.

3: oW ISpitch diameter 01 coated threads. REF: Screw·ThreadStandards for Federal Services. Handbook H 28 Part IRecommended torque: 30 inch·pounds.

Forward Polarity(02520 Series)


Reverse Polarity(02520-R Series)


OOa5LJDSolid StateDivision 1N3899-1N3903

1N3899R-1N3903R

20-A. 50-to-400-V,Fast-Recovery Silicon RectifiersGeneral-Purpose Types for High-Current Applications

Features:• Available in reverse-polarity versions:

1 N3899R, 1 N3900R, 1 N3901 R,1N3902R,1N3903R

• Low reverse-recovery current• Low forward-voltage drop• Low·thermal·resistance hermetic


200 ns max. (I RM = 1 A, IRM = 2 A max., see test circuit Fig. 2)


12-A File No. 664 (02412 Series)20-A File No. 665 (02520 Series)40·A File No. 580 (02540 Series)

Forward-polarity Reverse-polarityI1N3899·1 N39031 11N3899R-1 N3903R)

JEoEC 00-5

ReA types 1 N3899-1 N3903 and 1N3899R-l N3903R arediffused-junction silicon rectifiers in a stud-type hermeticpackage_ These devices differ only in their voltage ratings.

All types feature fast reverse-recovery time of 200 ns max.These devices are intended for use in high-speed inverters,choppers. high-frequency rectifiers, "free-wheeling" diodecircuits, and other high-frequency applications


REVERSE VOLTAGE:*Repetitive peak '." ...........•.........

Non-repetitive peak*OClBlockingl .FORWARD CURRENT (Conduction angle'" 180°,

half sine wave):RMS IT C = 100° C)-

.~ Average (T C = 100oCI·• Peak-surge (non-repetitive): 0

At junction temperature IT Jl = 150 C:For one cycle of applied voltage, 60 HzFor ten cycles of applied voltage, 60 Hz

Peak (repetitive) .........•'STORAGE-TEMPERATURE RANGE'OPERATING IJUNCTION) TEMPERATURESTUD TORQUE:*Recommended .

Maximum 100 NOT EXCEED) .

50 100 200 300 400 V75 200 300 400 500 V50 100 200 300 400 V

-30 A20 A

225 A120 A100 A

-65 to 175 °c-65 to 150 °c

30 in-Ib50 in-Ib

*In accordance with JEDEC registration data.

·Case temperature is measured at center of any flat surface on the hexagonal head of the mounting stud.

MIN. MAX.

Reverse Current:

StaticFor VRRM = max ..rated value, IF = 0, TC = 25°C ............. .. . IRM - 50 IlA

TC = 100°C . . . . . . . . . . . . . . . - 6 mA

DynamicFor single phase full cycle average, 10 = 20 A, T C = 100°C .......... IR(AV) - 10 mA


At iF = 20 A, VRRM ,. rated value, TJ = 100°C .................. VFIPK) - 1.5 V

At iF = 20 A, T J = 25° C ........ - .. , ........................ vF - 1.4 V


IFM = 1 A, I RM = 2 A max., TC = 25°C .................. .. . trr - 200 ns

Thermal Resistance IJunction-to·Case) ......... - .............. .. . ROJC - 1.5 °C/W

~O-Q OUTPUT TOOSCILLOSCOPE· •

(WIlH RiSE •TIME:!: 0.01 ,.SJ

CONSTANTVOLTAGE SUPPLY(ADJUST fOR I A DCTHROUGH RECTIFIERUNDER TEST-APPROX. 30 V J

•• UNITS INTERCONNECTED WITH RG-58U CABLE WITH50-a TERMINATING RESISTOR AT INPUTTERMINALS Of OSCILLOSCOPE

'~Rl SELECTED TO GIVE MAXIMUM:rRM NO GREATER THAN 2 A

{APPROXIMATELY 14 QJ

IF tft R2 I n,lOW NOH-INDUCTIVE OR TENo 10 n, I W, 1"Ko CARBON COMPOSITION RESISTORS


I.M--I.

~ ,"",""'""@)-~~~:INSULATOR

,,""'A'lA'LEATPU8lISHfDH •• ROWA,AEPRICES

GJ(~~:~~~~KOF3HTEFLON' INSULATING BUSHING

0---- $H~C~~':~ ~nO~g6~oi;;711.53mm)MAX

DF6B a.VAll"llEA,rpU8LISHED

MICA INSULATOR ----0 HA,AOW"REPRICES

.••v ••••t••.aLEAT PU8L1SHED 0HAROWA,REPl'UCES

~~~~CTOA~

"V,",'l •••eUATPU8lISH[O @.-- ~~~~O~ASHER } SUPPLIED

~--NA38B DEvICE~- HEX,NUT

In the United Kingdom, Europe, .tv1lddle East, and Africa, mounting-hardware policies may differ; check the availability of all itemsshown with your ReA sales representative or supplier.


INCHES MILLIMETERSSYMBOL MIN. MAX, MIN. MAX. NOTES

A - 0.450 - 11.43

b - 0.375 - 9.520.030 0.080 0.77 2.03

00 - 0.794 - 20.1600, - 0.667 - 16.94E 0.669 0.688 17.00 17.47

" 0.115 0.200 2.93 5.08J 0.750 '.000 19.05 25.40

oM 0.220 0.249 5.59 6.32N 0.422 0.453 10.72 11.50N, - 0.090 - 2.28S 0.156 - 3.91 -oT 0.140 0.115 3.56 4.44OW 1I.•..iUNF2A 1/4·TUNF 2A ,Z - 0.002 - 0.050Z, - 0.006 - 0.152

NOTE

1 ¢W IS pilCh diameter of co••ed threads. REF: SCre.•••.ThreadStandards tor Federal Services, Hal'ldbook H 28 Part IReeommended torque: 30 inch·pounds.


Forward Polarity Reverse Polarity(1N3899-1N3903) (lN3899R -lN3903R)

No.1 (Lug) - Anode NO.1 (Lug) - CathodeNo.2 (Stud) - Cathode NO.2 (Stud - Anode

[]1(]5LJDSolid StateDivision 1N3909-1 N3913

1N3909R-1N3913R

Forward-polarity Reverse-polarity11N3909-1 N39131 I1N3909R-1N3913R)

JEOEC 00-5

30-A, 50-to-400-V,Fast-Recovery Silicon RectifiersGeneral-Purpose Types for High-C'Jrrent Applications

Features.-

• Available in reverse-polarity versions: • Low reverse-recovery current1N3909R, 1N3910R, 1N3911R, • Low forward-voltage drop1N3912R,1N3913R • Low-thermal-resistance hermetic


200 ns max_ (I RM = 1 A, I RM = 2 A max., see test circuit Fig. 2)


12-A File No. 664 (02412 Series)20-A File No. 665 (02520 Series)40-A File No. 580 (02540 Series)

ReA types 1N3909 - 1N3913 and 1N3909R -1N3913R arediffused-junction silicon rectifiers in a stud-type hermeticpackage. These devices differ only in their voltage ratings.

REVERSE VOI_TAGE,*Repetitive peak ","

Non-repetitive peak*DC (Blocking) ...

FORWARD CURRENT (Conduction angle =. 180°,half sine wave):RMS IT C = 100

oCI'

* Average ITC = , aOoC)'"* Peak-surge lnon-repetitive>:

At junction temperature IT}:- 150°C:For one cycle of applied voltage, 60 HzFor ten cycles of applied voltage. 60 Hz

Peak (repetitive)'STORAGE-TEMPERATURE RANGE'OPERATING (JUNCTION) TEMPERATURESTUD TORQUE,

All types feature fast reverse-recovery time of 200 ns max.These devices are intended for use in high·speed inverters,choppers, high-frequency rectifiers, "free-wheeling" diodecircuits, and other high-frequency applications

50 100 200 300 400 V75 200 300 400 500 V50 100 200 300 400 V

45 A30 A

300 A160 A125 A

-65 to 175 °c-65 to 150 °c

30 in-Ib50 in-Ib

*In accordance with JEOEC registration data.·Case temperature is measured at center of any flat surface on the hexagonal head of the mounting stud.

LIMITS


MIN. MAX.

Reverse Current:

StaticFor V R RM ~ max. rated value, I F ~ 0, T C = 25°C ................ IRM - 80 /lA

TC = 100°C ... . ........... - 10 mA

DynamicFor single phase full cycle average, 10 = 30 A, T C = 100°C .......... IRIAV) - 15 mA


At iF = 30 A, VRRM = rated value, TJ = 100°C ............... .. . VF(PK) - 1.5 V

At iF = 30 A, T J = 25° C ............... . .. . ..... _.0······ ... vF - 1.4 V


IFM = 1 A, IRM = 2 A max., TC = 25°C ................. - . . . trr - 200 ns

Thermal Resistance IJunction-to-Case) ..... . . - . .. . ......... ..... . ReJC - 1 °C/W

50 - n OUTPUT TOOSCillOSCOPE"·

(WITH RiSETlME'5001,.SI

CONSTANTVOLTAGE SUPPLY{ADJUST FOR I A DCTHROUGH RECTIFIERUNDER TEST-APPRQX 30 v J

•• UNITS INTERCONNECTED WITH FlG-SSU CABLE WITH50-a TERMINATING RESISTOR AT INPutTERMINALS OF OSCillOSCOPE

'~RI SELECTED rOGIVE MAXIMUMIRM NO GREATER THAN 2 A

(APPROXIMATELY 14 nl

IF '.. R2 I n,IOW NON-INDucnve: OR TENo 10 n, I W,I% CARBON COMPOSITION RESISTORS


92(101-22179111

IRM-IR

OSCILLOSCOPE DISPLAY OF REVERSE-RECOVERY TIME

----------------------File No.7?~£

1- <j>W "


Fig. 3 - Suggested mounting hardware.

INCHES MILLIMETERSSYMBOL MIN MAX MIN MAX. NOTES

A - 0.50 - 11.43

b - 0375 - 9.520.030 ooeo 071 2.03

vD - 0194 - 2016,.D, - 0667 - '694, 066. 0688 11.00 17.47

" 0.115 0200 293 508J 0750 , 000 1905 25.40,M 0220 0249 559 6.32N 0422 0453 1072 1150N, - 0090 - 2.28S o i56 - 397 -..-,1 0140 0175 3.56 '.44"W 1I4'2iUNF 2A 1/4'j UN' 2A ,2 - 0002 - OOSO

2, - 0006 - 0.152

NOTE

1 oW,~ pitch d,ameter of coated threads REF: Screw-ThreadSiandard$ for Federal ServICes, Handbook H 28 Pa'l IRecommended torque: 30 ,nch·pounds

Forward Polarity

(lN3909 -lN3913)

NO.1 (Lug) - AnodeNo.2 (Stud) - Cathode

Reverse Polarity(1N3909R - 1N3913R)

NO.1 (Lug) - CathodeNo.2 (Stud) - Anode

DDJ]sLlDSolid StateDivision 02540 Series

02540-R Series

I,Cathode

Forward-polarity Reverse-polarity(02540 Series) (0254D-RSeries)

JEDEC 00·5

40-A, 50- to- 600 V,Fast- RecoverySilicon Rectifiers

• Available in reverse-polarity versions:D2540A-R, D2540B-R, D2540D-R,D2540F-R, D2540M·R

• Low reverse-recovery current

• Low forward-voltage drop

• Low-thermal-resistance hermetic package• Fast reverse-recovery time -

0.35 I./smax. from 125 A peak

RCA D2540 series and D2540-R seriest inclusive, arediffused-junction-type silicon rectifiers in a stud-type her-metic package. These devices differ only in their voltageratings.

These devices are intended for use in high-speed inverters,choppers, high-frequency rectifiers, "free-wheeling" diodecircuits, and other high-frequency applications.

All types feature fast reverse-recovery time (0.35 I./Smax.from 125 A peak) with "soft" recovery characteristics that

D2540F D2540A D2540B D2540D D2540M(40956)* (40957)* (40958)* (R0959)* (40960)*D2540F-R D2540A-R D2540B-R D2540D-R D2540M·R(40956R)* (40957R)* (40958R)* (40959R)* (40960R)*

VRRM 50 100 200 400 600 VVRSM 100 200 300 600 800 V

IF(RMS) • 60 .. A10 • 40 .. A

IFSM 4 700 AIFRM 4 195 .. A

4 40 to 150 .. °C

Repetitive peak .Non-repetitive peak.

FORWARD CURRENT (Conduction angle = 180~half sine wave):

RMS (TC = 1000CI- ...........•.Average (TC = 1OOOC)-Peak-surge (non-repetitive):

At junction temperature (TJ) = 1500CFor one-half cycle of applied voltage, 60 Hz(8.3 ms)

Peak (repetitivelTEMPERATURE RANGE:

Storage and Operating (Junction)

LIMITS


MIN. MAX.

Reverse Current:

StaticFor VRRM = max. rated value, IF = 0, TC = 25°C - 100 i.J.A

TC = 100°CIRM

2.5 mA-Instantaneous Forward Voltage Drop:

At iF = 100 A, TJ = 25°C, See Figure 2. vF - 1.8 V

Reverse·Recovery Time:

For circuit shown in Figure 1:

At I FRM = 125 A, dildt = 25 A/i.J.s, pulse duration = 15 i.J.S

TC = 25°C trr -- 0.35 i.J.S

Thermal Resistance (Junction·to·Casel ROJC - 0.9 °C/W

2.25 p.H"*1:3~:4nOR RECTIFIERRC A UNDER TEST

012018AMPLITUDEO-130V T133}<F

AC 5O(NIlRM

ReA OIlNllD260lN

]

50-n OUTPUT **TO OSCILLOSCOPE(WITH RiSETIME :s: 0.01 fLS)


NOTESALL RESISTANCE VALUES ARE IN OHMS

RM MONITORING RESISTOR

** UNITS INTERCONNECTED WITH RG -58U CABLE WITH50-n TERMINATING RESISTOR AT INPUTTERMINALS OF OSCillOSCOPE.

~ CA5IEn_RT.- TJ·" C

c ·I I I v J.....-r.. • TYPICAL/ MAXIMUM~ 100..Z •... f.I' • IIa •Ii!

10 1/~~ •·il •! I

z •i · I•

OJI 2 3 .••

INSTANnNEOUS FORWAROVOLTAGE DROP hF)-V921:5-19186

CURRENT WAVEFORM

OJ\.JC.FRMId- I

tOO 2DO X)() 400PEAK FORWARD CURRENT (I FRM) - A

FOR TYPICAL FORWARD-VOLTAGE-DROPUNIT SWITCHIHG LOSSES NEGLECTED

CURRENTWAVEFORM

0J1...J -IF.'"~t\';j..

200 300

PEAk FORWARD CURRENT t I FRWI - A

CURRENT WAVEFORM

OJ\.JC.FRMjt~f-L

100 200 300 400PEAK FORWARD CURRENT (IFRM )-A

Fig.3-Average forward-power dissipation formaximum forward-voltage-drop unit.

FOR MAXIMUM FORWARD-VOLTAGE-DROP UNITSWITCHING lOSSES NEGLECTED

CU NW..IU"" -{ F'"

o lJ" '2

<t.~'i'o0,. OJ\.JC.FRM

t~LtOO 200 300 400

PEAK FORWARD CURRENT (IFRM)-It

92CS-19192RI

Fig.8-Maximum allowable case temperaturefor tvpical forward-voltage-drop unit.

~ 70~-''";000

::J..~ 20

~0

o 0o ."J .~".o .~

.~

CURRENTWAvmlIIII

oJ'1I -IF'"~1r.1-K>O 200 300 4CX)

PEAf( FORWARDCURRENT (IF,..)-A

"forward Polarity(02540 Series)

No.1 (Lugl - AnodeNo.2 (Stud) - Cathode

Reverse Polarity(02540-R Seri'os)

No.1 (Lug) - CathodeNo,2 (Stud I - Anode

1 Completl t"'reads to extend to wil"'in 2-112 t"'reads 01 sealingpl;tne.

2. Afl9.llar ()(ientltion olt"'e tll'"minal is undelined.3. 1/4-28 UNF-2A. Maximum pitc'" diameler of plaled t"'readss"'al!

be basic pilC'" diametll'" 1.2268 inc•.•.5.14 mm) ref. (screw t"'readmndards for Fecletal Services 1951) H;tndbook H28 1951 PI

4. Minimumftat

CURRENT WAVEFORM

0JU"" IFRMt,~.I-L300 400

IIF•••) -A92CS-t9t93RI

Fig.9-Maximum allowable case temperaturefor maximum forward·voltage·drop unit.


INCHES MILLIMETERS

YMBOl MIN. MAX MIN. MAX. NOTESA 0450 n.4

b - 0.315 - 9.53 2

- 0.080 - 2.03.0 - 0.667 - 16.94

E 0.667 0.687 16.94 17.45

F 0.115 0200 2.92 5j08

F, 0.060 - 1.52 -J - 1.000 - 25.40

I 0.156 - 3." - 4

.M 0.220 0.249 5.59 6.32 1

N 0.422 0.453 10.12 11.51.' 0.140 0.175 3." 4.45W 1/4-28 UNF 2A 1/4-28 UNF 2A 1,3

oornLJDSolid StateDivision D3202Y

D3202U

Plastic-Packaged Two-Terminal Trigger Devices forApplications in Military, Industrial, and Commercial Equipment

• For critical triggering applications requiring narrow breakovervoltage range (29-35V)-D3202Y

• Typical breakover voltage: V(BO) = 32 V

• Low breakover current (at breakover voltage): I(BO) = 251lA max.

• High peak pulse current capability

• Breakover voltage symmetry:

\+V(BO) I-I-V(BO) I= ±3 V max.

RCA D3202Y (45411)' and D3202U (45412)' are all-diffused, three·layer, two-terminal devices in an axial-leadplastic package designed specifically for triggering thyristors.Both units exhibit bidirectional negative-resistance charac·teristics.

These diacs are intended for use in thyristor phase-control

circuits for lamp-dimming, universal-motor speed control,and heat controls. Their small size and plastic package ofhigh insulation resistance make these diacs especially suitablefor applications in which high packing densities areemployed.

MAXIMUM RA TI NGS, Absolute-Maximum Values:

DEVICE DISSIPATION:At case temperature up to 400CAt casetemperatures above 40o'C

.1 WDerate 0.016 WloC

TEMPERATURE RANGE:StorageOperating (Junction)

-40 to +150 °c-40 to +100 °c

LEAD TEMPERATURE (During Soldering)At distance.2: 1/16 in. (1.59 mml from casefor 10 s max.

o 0.02 0.04 0.06 o.oe 0.1TRIGGERING CAPACITANCE ICT)-~F

.rC:S-20101

LIMITS

CHARACTE R ISTI C SYMBOL TEST CONDITIONS D3202Y D3202U UNITS

MIN. MAX. MIN. MAX.

Breakover VoltageV(BO) 29 35 25 40 V

(Forward or Reverse)

Breakover VoltageI +V(Bo)I-I-V(BOI! - ±3 - ±3 V

Symmetry

Peak Output Current VSUPPL Y = 30 VRMS,

(See Figs. 2, 3, & 5.l ipk CT=O.I/lF, 190 - 190 - mARL = 20 Do

Peak Breakover Current I(BO) At breakaver voltage - 25 - 25 /lA

Dynamic Breakback I !'>V± I VSUPPL Y = 30 VRMS,

VoltageCT = 0.1 /IF 9 - 9 - VRL = 20 Do

Thermal ImpedanceIOJAJunction-to-ambient - 60 - 60 °C/W

~ OUTPUT PULSE WIDTH • ~O~.,

I CASE TEMPERATURE (Tel ~40·C

~ 2\~ I.•

\z~'" I.•

'""u I.'~" 1.2..

SAFE OPERATING~ SINUSOIDAL WAVE

" AREA0 I

\ SQUAR1EI~~ 0 .• WAvE _~.. X~ 0 .•~

'"~ 0.'.."j 0.2 -~

0 . .DIMENSIONAL OUTLINE FOR TYPESD3202Y & D3202UJEDEC DO-15


MIN MAX MIN MAX

" 0.027 0035 0.686 0.889.0 0.104 0140 2.64 3.56

G 0.230 0.300 5.84 7.62I 1.000 - 25.40 -I, - 0050 - 1_27

Application Notes

OOClliLmSolid StateDivision

Solid State DevicesOperating Considerations

1CE-402

Operating Considerations forRCA Solid State Devices

Solid state devices are being designed into an increasingvariety of electronic equipment because of their highstandards of reliability and performance. However, it isessential that equipment designers be mindful of goodengineering practices in the use of these devices to achievethe desired performance.

This Note summarizes important operating recommen-dations and precautions which should be followed in theinterest of maintaining the high standards of performance ofsolid state devices.

The ratings included in RCA Solid State Devices databulletins are based on the Absolute Maximum RatingSystem, which is defined by the following Industry Standard(JEDEC) statement:

Absolute-Maximum Ratings are limiting values of opera-ting and environmental conditions applicable to any electrondevice of a specified type as defined by its published data,and should not be exceeded under the worst probableconditions.

The device manufacturer chooses these values to prOVideacceptable serviceability of the device, taking no responsi-bility for equipment variations, environmental variations, andthe effects of changes in operating conditions due tovariations in device characteristics.

The equipment manufacturer should design so thatinitially and throughout life no absolute-maximum value forthe intended service is exceeded with any device under theworst probable operating conditions with respect to supply-voltage variation, equipment component variation, equip-ment control adjustment, load variation, signal variation,environmental conditions, and variations in device charac-teristics.

It is recommended that equipment manufacturers consultRCA whenever device applications involve unusual electrical,mechanical or environmental operating conditions.

GENERAL CONSIDERATIONSThe design flexibility provided by these devices makes

possible their use in a broad range of applications and under

many different operating conditions. When incorporatingthese devices in equipment, therefore, designers shouldanticipate the rare possibility of device failure and makecertain that no safety hazard would result from such anoccurrence.

The small size of most solid state products providesobvious advantages to the designers of electronic equipment.However, it should be recognized that these compact devicesusually provide only relatively small insulation area betweenadjacent leads and the metal envelope. When these devicesare used in moist or contaminated atmospheres, therefore,supplemental protection must be provided to prevent thedevelopment of electrical conductive paths across therelatively small insulating surfaces. For specific informationon voltage creepage, the user should consult references suchas the JEDEC Standard No. 7 "Suggested Standard onThyristors," and JEDEC Standard RS282 "Standards forSilicon Rectifier Diodes and Stacks".

The metal shells of some solid state devices operate at thecollector voltage and for some rectifiers and thyristors at theanode voltage. Therefore, consideration should be given tothe possibility of shock hazard if the shells are to operate atvoltages appreciably above or below ground potential. Ingeneral, in any application in which devices are operated atvoltages which may be dangerous to personnel, suitableprecautionary measures should be taken to prevent directcontact with these devices.

Devices should not be connected into or disconnectedfrom circuits with the power on because high transientvoltages may cause permanent damage to the devices.

In common with many electronic components, solid-statedevices should be operated and tested in circuits which havereasonable values of current limiting resistance, or otherforms of effective current overload protection. Failure toobserve these precautions can cause excessive internal heatingof the device resulting in destruction and/or possibleshattering of the enclosure.

TRANSISTORS WITH FLEXIBLE LEADSFlexible leads are usually soldered to the circuit

elements. It is desirable in all soldering operations to providesome slack or an expansion elbow in each lead, to preventexcessive tension on the leads. It is important during thesoldering operation to avoid excessive heat in order toprevent possible damage to the devices. Some of the heat canbe absorbed if the flexible lead of the device is graspedbetween the case and the soldering point with a pair of pliers.

TRANSISTORS WITH MOUNTING FLANGESThe mounting flanges of JEDEC- type packages such as

the TO-3 or TO-66 often serve as the collector or anodeterminal. In such cases, it is essential that the mountingflange be securely fastened to the heat sink, which may bethe equipment chassis. Under no circumstances, however,should the mounting flange be soldered directly to the heatsink or chassis because the heat of the soldering operationcould permanently damage the device.

Such devices can be installed in commercially availablesockets. Electrical connections may also be made bysoldering directly to the terminal pins. Such connections maybe soldered to the pins close to the pin seals provided care istaken to conduct excessive heat away from the seals;otherwise the heat of the soldering operation could crack thepin seals and damage the device.

During operation, the mounting-flange temperature ishigher than the ambient temperature by an amount whichdepends on the heat sink used. The heat sink must havesufficient thermal capacity to assure that the heat dissipatedin the heat sink itself does not raise the device moun ting-flange temperature above the rated value. The heat sink orchassis may be connected to either the positive or negativesupply.

[n many applications the chassis is connected to thevoltage-supply terminal. If the recommended mountinghardware shown in the data bulletin for the specificsolid-state device is not available, it is necessary to use eitheran anodized aluminum insulator having high thermal con-ductivity or a mica insulator between the mounting-flangeand the chassis. [f an insulating aluminum washer is required,it should be drilled or punched to provide the two mountingholes for the terminal pins. The burrs should then beremoved from the washer and the washer anodized. To insurethat the anodized insulating layer is not destroyed duringmounting, it is necessary to remove the burrs from the holesin the chassis.

It is also important that an insulating bushing, such asglass-filled nylon, be used between each mounting bolt andthe chassis to prevent a short circuit. However, the insulatingbushing should not exhibit shrinkage or softening under theoperating temperatures encountered. Otherwise the thermalresistance at the interface between transistor and heat sinkmay increase as a result of decreasing pressure.

PLASTIC POWER TRANSISTORS AND THYRISTORSRCA power transistors and thyristors (SCR's and triacs)

in molded-silicone-plastic packages are available in a wide

range of power-dissipation ratings and a variety of packageconfigurations. The following paragraphs provide guidelinesfor handling and mounting of these plastic-package devices,recommend forming of leads to meet specific mountingrequirements, and describe various mounting arrangements,thermal considerations, and cleaning methods. This informa-tion is intended to augment the data on electrical character-istics, safe operating area, and performance capabilities in thetechnical bulletin for each type of plastic-package transistoror thyristor.

Lead-Forming Techniqup.sThe leads of the RCA VERSAWATT in-line plastic

packages can be formed to a custom shape, provided they arenot indiscriminately twisted or bent. Although these leadscan be formed, they are not flexible in the general sense, norare they sufficiently rigid for unrestrained wire wrapping

Before an attempt is made to form the leads of an in-linepackage to meet the requirements of a specific application,the desired lead configuration should be determined, and alead-bending fixture should be designed and constructed. Theuse of a properly designed fixture for this operationeliminates the need for repeated lead bending. When the useof a special bending fixture is not practical, a pair oflong-nosed pliers may be used. The pliers should hold thelead firmly between the bending point and the case, butshould not touch the case.

When the leads of an in-line plastic package are to beformed, whether by use of long-nosed pliers or a specialbending fixture, the folloWing precautions must be observedto avoid internal damage to the device:

I. Restrain the lead between the bending point and theplastic case to prevent relative movement between thelead and the case.

2. When the bend is made in the plane of the lead(spreading), bend only the narrow part of the lead.

3. When the bend is made in the plane perpendicular to thatof the leads, make the bend at least 1/8 inch from theplastic case.

4. Do not use a lead-bend radius of less than 1/16 inch.5. Avoid repeated bending of leads.

The leads of the TO-220AB VERSAWATT in-linepackage are not designed to withstand excessive axial pull.Force in this direction greater than 4 pounds may result inpermanent damage to the device. If the mounting arrange-ment tends to impose axial stress on the leads, some methodof strain relief should be devised.

Wire wrapping of the leads is permissible, provided thatthe lead is restrained between the plastic case and the pointof the wrapping. Soldering to the leads is also allowed. Themaximum soldering temperature, however, must not exceed2750C and must be applied for not more than 5 seconds at adistance not less than 1/8 inch from the plastic case. Whenwires are used for connections, care should be exercised toassure that movement of the wire does not cause movementof the lead at the lead-to-plastic junctions.

The leads of RCA molded-plastic high-power packagesare not designed to be reshaped. However, simple bending ofthe leads is pe,mitted to change them from a standardvertical to a standard horizontal configuration, or conversely.Bending of the leads in this manner is restricted to three90-degree bends; repeated bendings should be avoided.Mounting

Recommended mounting arrangements and suggestedhardware for the VERSA WAIT transistors are given in thedata bulletins for specific devices and in RCA ApplicationNote AN-4124. When the transistor is fastened to a heat sink,a rectangular washer (RCA Part No. NR231 A) is recom-mended to minimize distortion of the mounting flange.Excessive distortion of the flange could cause damage to thetransistor. The washer is particularly important when the sizeof the mounting hole exceeds 0.140 inch (6-32 clearance).Larger holes are needed to accommodate insulating bushings;however, the holes should not be larger than necessary toprovide hardware clearance and, in any case, should notexceed a diameter of 0.250 inch.

Flange distortion is also possible if excessive torque isused during moun ting. A maximum torque of 8 inch-poundsis specified. Care should be exercised to assure that the toolused to drive the mounting screw never comes in contactwith the plastic body during the driving operation. Suchcontact can result in damage to the plastic body and internaldevice connections. An excellent method of avoiding thisproblem is to use a spacer or combination spacer-isolatingbushing which raises the screw head or nu t above the topsurface of the plastic body. The material used for such aspacer or spacer-isolating bushing should, of course, becarefully selected to avoid "cold flow" and consequentreduction in mounting force. Suggested materials for thesebushings are diallphtalate, fiberglass-filled nylon, or fiber-glass-filled polycarbonate. Unfilled nylon should be avoided.

Modification of the flange can also result in flangedistortion and should not be attempted. The transistorshould not be soldered to the heat sink by use of lead-tinsolder because the heat required with this type of solder willcause the junction temperature of the transistor to becomeexcessively high.

The. TO·220AA plastic transistor can be mounted incommercially available TO-66 sockets, such as UIDElectronics Corp. Socket No. PTS4 or equivalent. Fortesting purposes, the TO-220AB in-line package can bemounted in a Jetron Socket No. DC74-104 or equivalent.Regardless of the mounting method, the followingprecautions should be taken:

1. Use appropriate hardware.2. Always fasten the transistor to the heat sink before the

leads are soldered to fixed terminals.3. Never allow the mounting tool to come in contact with

the plastic case.4. Never exceed a torque of 8 inch-pounds.5. Avoid oversize mounting holes.6. Provide strain relief if there is any probability that axial

stress will be applied to the leads.

7. Use insulating bushings to prevent hot-creep problems.Such bushings should be made of diallphthalate, fiber-glass-filled nylon, or fiberglass-filled polycarbonate.

The maximum allowable power dissipation in a solidstate device is limited by the junction temperature. Animportant factor in assuring that the junction temperatureremains below the specified maximum value is the ability ofthe associ~ted thermal circuit to conduct heat away from thedevice.

When a solid state device is operated in free air, without aheat sink, the steady-state thermal circuit is defined by thejunction-to-free-air thermal resistance given in the publisheddata for the device. Thermal considerations require that afree flow of air around the device is always present and thatthe power dissipation be maintained below the level whichwould cause the junction temperature to rise above themaximum rating. However, when the device is mounted on aheat sink, care must be taken to assure that all portions ofthe thermal circuit are considered.

To assure efficient heat transfer from case to heat sinkwhen mounting RCA molded-plastic solid state powerdevices, the following special precautions should beobserved:

I. Mounting torque should be between 4 and 8 inch-pounds.

2. The mounting holes should be kept as small as possible.3. Holes should be drilled or punched clean with no burrs or

ridges, and chamfered to a maximum radius of 0.010inch.

4. The mounting surface should be flat within 0.002inch/inch.

5. Thermal grease (Dow Corning 340 or equivalent) shouldalways be used on both sides of the insulating washer ifone is employed.

6. Thin insulating washers should be used. (Thickness offactory-supplied mica washers range from 2 to 4 mils).

7. A lock washer or torque washer, made of material havingsufficient creep strength, should be used to preventdegradation of heat sink efficiency during life.

A wide variety of solvents is available for degreasing andflux removal. The usual practice is to submerge componentsin a solvent bath for a specified time. However, from areliability stand point it is extremely important that thesolvent, together with other chemicals in the solder-cleaningsystem (such as flux and solder covers), do not adverselyaffect the life of the component. This consideration appliesto all non-hermetic and molded-plastic components.

It is, of course, impractical to evaluate the effect onlong-term transistor life of all cleaning solvents, which aremarketed with numerous additives under a variety of brandnames. These solvents can, however, be classified withrespect to their component parts, as either acceptable orunacceptable. Chlorinated solvents tend to dissolve the outerpackage and, therefore, make operation in a humid atmos-phere unreliable. Gasoline and other hydrocarbons cause the

inner encapsulant to swell and damage the transistor. Alcoholand unchlorinated freons are acceptable solvents. Examplesof such solvents are:I. Freon TE2. Freon TE-353. Freon TP-35 (Freon PC)4. Alcohol (isopropanol, methanol, and special denatured

alcohols, such as SDA I, SDA30, SDAJ4, and SDA44)Care must also be used in the selection of fluxes for lead

soldering. Rosin or activated rosin fluxes are recommended,while organic or acid fluxes are not. Examples of acceptablefluxes are:I. Alpha Reliaros No. 320-332. Alpha Reliaros No. 3463. Alpha Reliaros No. 7114. Alpha Reliafoam No. 8075. Alpha Reliafoam No. 8096. Alpha Reliafoam No. 811-137. Alpha Reliafoam No. 815-358. Kester No. 44

If the completed assembly is to be encapsulated, theeffect on the molded-plastic transistor must be studied fromboth a chemical and a physical standpoint.

RECTIFIERS AND THYRISTORSA surge-limiting impedance should always be used in

series with silicon rectifiers and thyristors. The impedancevalue must be sufficient to limit the surge current to thevalue specified under the maximum ratings. This impedancemay be proVided by the power transformer winding, or by anexternal resistor or choke.

A very efficient method for mounting thyristors utiliZingpackages such as the JEDEC TO-5 and "modified TO-5" is toprovide intimate contact between the heat sink and at leastone half of the base of the device opposite the leads. Thesepackages can be mounted to the heat sink mechanically withglue or an epoxy adhesive, or by soldering. Soldering to theheat sink is preferable because it is the most efficientmethod.

The use of a "self-jigging" arrangement and a solderpreform is recommended. Such an arrangement is illustratedin RCA Publication MHI-300B, "Mounting HardwareSupplied with RCA Semiconductor Devices". If each unit issoldered individually, the heat source should be held on theheat sink and the solder on the unit. Heat should be appliedonly long enough to permit solder to flow freely. For moredetailed thyristor mounting considerations, refer to Appli-cation Note AN3822, "Thermal Considerations in Mountingof RCA Thyristors".

MOS FIELD-EFFECT TRANSISTORSInsulated-Gate Metal Oxide-Semiconductor Field-Effect

Transistors (MOS FETs), like bipolar high-frequencytransistors, are susceptible to gate insulation damage by theelectrostatic discharge of energy through the devices.Electrostatic discharges can occur in an MOS FET if a typewith an unprotected gate is picked up and the static charge,built in the handler's body capacitanu' is discharged through

*Trade Mark: Emerson and Cumming, Inc.

the device. With proper handling and applicationsprocedures, however, MOS transistors are currently beingextensively used in production by numerous equipmentmanufacturers in military, industrial, and consumer applica-tions, with virtually no problems of damage due toelectrostatic discharge.

In some MOS FETs, diodes are electrically connectedbetween each insulated gate and the transistor's source.These diodes offer protection against static discharge andin-circuit transients without the need for external shortingmechanisms. MOS FETs which do not include gate-protection diodes can be handled safely if the follOWingbasicprecau tions are taken:I. Prior to assembly into a circuit, all leads should be kept

shorted together either by the use of metal shortingsprings attached to the device by the vendor, or by theinsertion into conductive material such as "ECCOSORB*LD26" or equivalent.(NOTE: Polystyrene insulating "SNOW" is not suffi-ciently conductive and should not be used.)

2. When devices are removed by hand from their carriers,the hand being used should be grounded by any suitablemeans, for example, with a metallic wristband.

3. Tips of soldering irons should be grounded.4. Devices should never be inserted into or removed from

circuits with power on.

INTEGRATED CIRCUITSIn any method of mounting integrated circuits which

involves bending or forming of the device leads, it isextremely important that the lead be supported and clampedbetween the bend and the package seal, and that bending bedone with care to avoid damage to lead plating. In no caseshould the radius of the bend be less than the diameter of thelead, or in the case of rectangular leads, such as those used inRCA 14-lead and 16-lead flat-packages, less than the leadthickness. It is also extremely important that the ends of thebent leads be straight to assure proper insertion through theholes in the printed-drcuit board_

COS/MOS (Complementary-Symmetry MOS)Integrated Circuits

1. HandlingAll COS/MOS gate inputs have a resistor/diode gate

protection network. All transmission gate inputs and alloutputs have diode protection prOVided by inherent p-njunction diodes. These diode networks at input and outputinterfaces fully protect COS/MOS devices from gate-oxidefailure (70 to 100 volt limit) for static discharge or signalvoltage up to I to 2 kilovolts under most transient orlow-current conditions.

Although protection against electrostatic effects isprovided by built-in circuitry, the following handlingprecautions should be taken:I. Soldering-iron tips and test equipment should be

grounded.2. Devices should not be inserted in non-conductive

containers such as conventional plastic snow or trays.

Unused InputsAll unused input leads must be connected to either VSS

or VDD, whichever is appropriate for the logic circuitinvolved. A floating input on a high-current type, such as theCD4009A, CD40IOA, not only can result in faulty logicoperation, but can cause the maximum power dissipation of200 milliwatts to be exceeded and may result in damage tothe device. Inputs to these types, which are mounted onprinted-circuit boards that may temporarily becomeunterminated, should have a pull-up resistor to VSS or VDD.A useful range of values for such resistors is from 0.2 to Imegohm.

Input SignalsSignals shall not be applied to the inputs while the device

power supply is off unless the input current is limited to asteady state value of less than 10 milliamperes.

Output Short CircuitsShorting of outputs to VSS or VDD can damage many of

the higher-out put-current CaS/MaS types, such as theCD4007A, CD4009A, and CD4010A. In general, these typescan all be safely shorted for supplies up to 5 volts, but will bedamaged (depending on type) at higher power-supplyvoltages. For cases in which a short-circuit load, such as thebase of a p-n-p or an n-p-n bipolar transistor, is directlydriven, the device output characteristics given in thepublished data should be consulted to determine therequirements for a safe operation below 200 milliwatts.

For detailed CaS/MaS IC Handling Considerations, referto Application Note ICAN-6000 "Handling Considerationsfor MaS Integrated Circuits".

Solid state chips, unlike packaged devices, are non-hermetic devices, normally fragile and small in physical size,and therefore, require special handling considerations asfollows:

I. Chips must be stored under proper conditions to insurethat they are not subjected to a moist and/or contam-inated atmosphere that could alter their electrical,physical, or mechanical characteristics. After the shippingcontainer is opened, the chip must be stored under thefollowing conditions:

A. Storage temperature, 400C max.B. Relative humidity, 50% max.C. Clean, dust-free environment.

2. The user must exercise proper care when handling chipsto prevent even the slightest physical damage to the chip.

3. During mounting and lead bonding of chips the user mustuse proper assembly techniques to obtain proper elec-trical, thermal, and mechanical performance.

4. After the chip has been mounted and bonded, anynecessary procedure must be followed by the user toinsure that these non-hermetic chips are not subjected tomoist or contaminated atmosphere which might causethe development of electrical conductive paths across therelatively small insulating surfaces. In additior., properconsideration must be given to the protection of thesedevices from other harmful environments which couldconceivably adversely affect their proper performance.

[Kl(]5LJDSolid StateDivision

ThyristorsApplication Note

AN-3418

DesignRCA-S6431M

In High-Current

Considerations for theSilicon Controlled Rectifier

Pulse Applicationsby

D. E. Burke and G. W. Albrecht

Silicon controlled rectifiers (SCR's) are often usedin pulse circuits in which the ratio of peak to averagecurrent is large. Typical applications include radarpulse modulators, inverters, and switching regulators.The limiting parameter in such applications often isthe time required for forward current to spread overthe whole area of the junction. Losses in the SCRare high, and are concentrated in a small region untilthe entire junction area is in conduction. This concen-tration produces undesirable high temperatures.

The RCA-S6431M SCR is specially designed toachieve rapid utilization of the full junction area Therating curves and calculations presented in this Noteallow the designer to make full use of the high switch-ing capability of this device.

A typical SCR pulse modulator circuit is shownin Fig.I. Basic waveforms for the circuit are shownin Fig.2. The capacitors of the energy-storage networkare charged by the dc supply. The SCR is triggeredby pulses from the gate-trigger generator No.1, and theenergy-storage network discharges through an induct-ance and the load (transformer). Fig.2 shows that thedischarge of the storage network (t 1- t2) is oscillatory;the half-sine-wave shape is characteristic of a singleLC-section energy-storage network.

For turn-off, the load is "mismatched" to thedischarge-circuit impedance so that a negative voltageis developed on the capacitor at the end of the pulse.

The negative voltage reverse-biases the SCR. Thisform of turn-off is indicated in Fig.2(bl.

When the energy-storage network is rechargedfrom the dc supply, the SCR returns to the forward-blocking condition and is ready foc the next cycle.The recharge interval (t3 - t4) may be delayed by useof a charging SCR, as shown in Figs.l and 2 (t2 - t3).This technique reduces the turn-off time requirementsfor the SCR. The rate of rec harge infl uences thedv/ dt requirements for the SCR.

Figs.l and 2 illustrate only one of a great varietyof pulse circuits, each of which would have particularrequirements for the SCR. A common requirementwould be to pass focward currents with particularemphasis on shape and magnitude.

Turn·On Time Definitions

In the idealized waveforms of Fig.2, the SCR ispresented as a perfect switch. Actually, it exhibitsa finite resistance prior to turn-on, a delay after theintroduction of the trigger pulse, and appreciableresistance after turn-on.

The common definition of turn-on time adequatelycovers the delay and rise-time intervals of the turn-onprocess, but does not consider the rate of currentspread over the junction area and its attendant dissi-pation. Because the dissipation after turn-on is animportant consideration in pulse circuits, turn-on defi-nitions in themselves provide no indication of theswitching capability of the SCR.

Ie

As an example, the rise-time portion of turn-onis defined as the time interval between the 10-per-centand 90-per-cent points on the current wave shape whenthe SCR is triggered on in a circuit that has ratedforward voltage and sufficient resistance to limit thecurrent to rated values. For a 600-volt device, the endof the turn-on interval occurs when the forward voltagedrop across the SCR is 60 volts. This value contrastswith the steady-state forward voltage of only 1 or Zvolts under such conditions. An interval many timesgreater than the turn-on time may be -required beforethe forward voltage drop reduces to the steady-statelevel.

Switching Capability

Because several different physical effects occurin the SCR during the complete turn-on interval, it isconvenient to divide the total turn-on time into threediscrete intervals: delay time tl, fall time tz, andequalizing time t3' These intervals are shown in Fig.3.The sol id lines represent device turn-on to low steady-state forward current, in which case equalizationeffects are not pronounced. The dashed lines representSCR turn-on to high currents, in which case t3 becomesa noticeable interval.

The first interval (tl or delay time) results fromthe initiation of forward conduction between the p-typebase and the n-type emitter (i.e., injection of holesthrough the gate-cathode junction and injection of elec-trons through the cathode-gate junction>. This intervaldepends to a Iarge extent upon the level of gate cur-rent used to turn on the SCR. The use of a triggerpul se greater than the min imum gate-current requirementof the SCR minimizes delay time and reduces the rangeof the delay times encountered between individualSeR's, the variability of delay with temperature, andthe variability of cycle-to-cycle delay or jitter.* Thereare no significant power losses in the SCR duringdelay. The del ay interval is primarily of interestbecause of its effect on system perfonnance.

* The technical bulletin for the S6431 Mcontains infonnation onmaximum trigger-pulse magnitudes for various pulse widthsfor this device. This Note discusses gating characteristicsof ReA SCR t 5 in more detail.

'+---VI I

II I

VSCR 0 - --1- --

II-h~ _III

S~~':.~b i r INO_2+~

{~ARGING0

seRI I I J

+GATE 0

SIGNALNo.1

Fig.2. Idealized wavefarmsfar pu/se.discharge circuit.

The second interval (tz or fall time) depends onthe initiation of forward conduction between the p-typeemitter and the n-type emitter (i.e., anode-to-cathodecurrent). When this phenomenon is isolated from cur-rent ef'gcts, as described later, the duration of thevoltage fall time measured from the 9O-per-cent to the10-per-cent point is less than 0.3 microsecond. Voltagefall time is illustrated in Fig.4 for a range of initialvoltages.

The flow of forward current during the voltage falltime results in power loss in this interval. The magni-

GATESIGNAL

No.1

IIIIIII I

I r--i---""'-= HIGH CURRENT

I " ~ II I, I ~ LOW CURRENT

r r-r------I I

III

I Il.. I

I I .••••-_L ~t1IGH CURRENT

o --,-""t'""t--r---I -j'2t- I

-l 'I I- t-t3~

II

+~o I

IIIIIIII

~d.u "Ull~ V1 vU1Luge HI r.oe ~tt, me aeVlce experIenceshigh peak dissipation during the short turn-on interval.

"'",,--

FigA - I/Iustratian of voltage faff time(low forward current).

The third discrete interval during turn-on, equaliza-tion time (t3 of Fig.3), represents the time required forthe current to spread over the junction area. The for-ward current resulting from the initial voltage fall isconcentrated in a small area of the junction and spreadsgradually over the entire area. The rate of increasein the active junction area depends on the geometryand the junction parameters, and is infll!enced by thelevels of driving voltage and current. In general, thetime required for full utilization of junction area repre-sents a considerably longer interval than tl (delay)or tz (fam.

For given conditions of current rise time, currentlevel, and gate drive, t3 could be defined as the timerequired for forward voltage to decrease to a givenmultiple of the final steady-state value under a con-stant-current pulse. Such a definition would be moreindicative of switching capability than the conventionaldefinition of turn-on time as the time required for for-ward ON-state voltage to decrease to a percentageof the initial blocking voltage. At best, however, eithertype of definition has only limited usefulness to theuser.

Characteristics and Ratings

Because the major factor In the rating of SCR'sfor pulse applications is the initial forward-voltagedrop, the RCA·S6431Mis rated specifically for thischaracteristic. Figs.5 and 6 show two families ofrating curves which make it possible to calculate thepower loss per pulse and the average power loss for aparticular current-pulse shape, magnitude, and repetitionrate desired. Figs.7 and 8 show maximum allowablerepetition rates and pulse amplitudes for several pulseshapes, and are useful as a quick estimating guidefor the pulse-current switching capability of the 86431 MSCR.

Limits must also be imposed upon the instantaneoustemperature rise of the junction over the average case

- 800....zw

~ 600

o!400

ft 200

Fig.S - Forward voltage as a function of forward vol-tage at various times after the initiation of turn-on.

temperature and upon the differential temperaturestresses in the device. Fig.9 shows the allowablemaximum current for the 864 13M at any time after theinitiation of the current pulse. This curve, togetherwith those in Figs.7 and 8, gives an indication of thefeasibility of using the 86431Min a high-current pulseapplication.

Fig.IO illustrates the calculation of device dissi-pation and pulse repetition rate for a particular pulse

Fig.6 - Instantaneous forward dissipation as a functionof current at various times after the initiation

of turn-on.

Fig.? - Peak current as a function of maximum repetitionrate for sine-wave pulse shapes.

4000

~~"'3000

~'"w'"~2000

1

~lrZlo

~il' 0

Fig.8. Peak current as a function of maximum repetitionrate for square-wave pulse shapes.

Fig.9 - Maximum permissible current as a functionof time after the initiation of turn-on.

shape. In the example shown, the pulse has a peakmagnitude of 500 amperes and a base width of 5 micro-seconds. The curves shown in Fig.IO are constructedfrom the curves of Figs.5 and 6 by means of a seriesof readings at different time intervals (delay and fallregions are neglected), A step-by-step approximate

integral approach is then used to obtain the watt-seconds-per-pulse measurements shown in the table.For a repetition rate of 1000 pulses per second, theaverage forward dissipation is 24.37 watts for thecurrent pulse specified. This value is within therating of 30 watts for the S643 IMat a case temperature

~~o I 2 3 4 5TJME-~S

TIME DISSIPATION TOTAL AVERAGE MAXIMUMINTERVAL FOR DISSIPATION DISSIPATION REP. RATE

(~SI INTERVAL FOR ONE AT 1000 CIS FOR 30WmW-S PULSE REP. RATE DISSIPATION

mW-S (Wi (CIS)

0-0.5 1.87

0.5-1 4.12

1-2 8.2524.37 24.37 1225

2 3 6.18

3 4 3.254-5 0.70

EXAMPLE' AVERAGE FORWARD WATT- SECONDDISSIPATION DURING 3}'-S TO 4~SINTERVAL:(4-3) 11:10-6 S J. 3.25 II:103 W =3.25mW-S

of 65°C. At higher case temperatures the total dissi-pation must be decreased, as shown in Fig. II.

Because the interval of highest dissipation occursat the beginning of the current pulse, reduction in themagnitude of current during this time increases theover-all switching capability of the SCR. The currentmay be reduced by use of a saturable reactor in thepulse-<iischarge circuit which has sufficient unsaturatedvolt-second capacity to present a high impedance forone to two microseconds. The current is then small,and dissipation is limited, until the junction area inconduction increases to incl ude an appreciable per-centage of the total cathode. By the time the reactorsaturates and high pulse current results, the cathode

area in conduction is adequate to handle the high cur-rent with low dissipation.

The rate of current spread over the cathode areadepends upon several factors, one of which is thelevel of current. Therefore, the use of a delay reactorto keep forward current low also delays the spreadof current to some extent and subtracts from its bene-ficial effects. The maximum benefit can be achievedby reduction of the inductance of the reactor prior tosaturation, or by addition of another impedance inparallel with the reactor, to effect a compromise be-tween the initial current level and dissipation andthe rate of current-density equalization. The curvesin thi s Note do not represent the use of a delayreactor.

In addition to the power loss in the SCR caused byforward current, the total dissipation in the deviceincludes forward and reverse blocking losses andprobably reverse recovery losses during the turn-offprocess. The reverse recovery losses depend uponseveral factors, such as forward-current amplitude, rateof decrease of forward current, reverse-current flow,rate of rise of reverse voltage, and reverse-voltageamplitude. Because reverse losses are circuit-depend-ent, they can best be evaluated in a working circuit.

FORWARD AND REVERSELOSSES INCLUDEDr---....

-........-.............

..••........... -.............r---....

-.............r---..

100u.,"'~ eog..~ 60•...

Fig. 7 7 • Maximum average total power c/issipationas a function of case temperature.

Application of RCA Silicon Controlled Rectifiersto the Control of Universal Motors

byJ.V. Yonushka

Silicon controlled rectifiers have been widelyaccepted in power-control applications in industrialsystems where high-performance requirements justifythe economics of the application. Historically, in thecommercial high-volume market, economic considera-tions have precluded the use of the SCR. However,with the development of a family of SCR's by RCA de-signed specifically for mass-production economy andrated for 120- and 240-volt line operation, the use ofthese devices in controls for many types of small elec-tric motors has been made economically feasible. Thecontrols can be designed to provide good performance,maximum efficiency, and high reliability in compactpackaging arrangements.

The control circuits discussed in the following textare typical of the many possible circuits applicable toelectric motor control. A general description includingthe typical characteristics of universal motors is given.Speed control by use of phase-angle variations is dis-cussed; schematic diagrams are given, and the advan-tages and limitations of each circuit are contrasted. Achart of availableSCR's is shown at the end of the Note.

Universal Mators

Many fractional horsepower motors are series-wound"universal" motors, so named because of their abilityto operate directly from either ac or dc power sources.Fig.l is a schematic of this type of motor operatedfrom an ac supply. Because most domestic applicationstoday require 60-hertz power. universal motors are

usually designed to have optimum performance char-acteristics at this frequency. Most universal motorsrun faster at a given dc voltage than at the same 60-hertz ac voltage.

The field winding of a universal motor, whetherdistributed or lumped (salient pole), is in series withthe armature and external circuit, as shown in Fig.1.

Fig.! . Schematic diagram far a series-waunduniversal motor.

The current through the field winding produces a mag-netic field which cuts across the armature conductors.The action of this field in opposition to the field set upby the armature current subjects the individual con-ductors to a lateral thrust which results in armaturerotation.

AC operation of a universal motor is possible be-cause of the nature of its electrical connections. Asthe ac source voltage reverses every half-eycle, the

magnetic field produced by the field winding reversesits direction simultaneously. Because the armaturewindings are in series with the field windings throughthe brushes and commutating segments, the currentthrough the armature winding also reverses. Becauseboth the magnetic field and armature current are re-versed, the direction of the lateral thrust on the armaturewindings remains constant.

As the armature rotates through the magnetic field,a voltage opposite to the impressed voltage is inducedin the individual conductors. Counter emf produced inthe armature conductors is therefore proportional tomotor speed. In half-wave operation, during the non-conducting half-cycle of an SCR, the rotating armaturestill produces a counter emf because of the residualmagnetism of the field poles. In some of the applica-tions described, the counter emf of an operating motoris used as a means of providing speed regulation tocompensate for changing shaft loads.

The current through an operating motor armaturedepends upon the difference between the impressedvoltage (emf) and the counter emf. The current thatflows through a universal motor when it is initiallyenergized is large because there is no rotation to gener-ate a counter emf in the armature windings. The startingcurrent is limited only by the impedance of the armatureand field windings. The ratio of peak starting currentto peak running current can be as high as 10: 1.

The speed of a series motor automatically adjustsitself so that the difference between the impressed volt-age and the counter emf is sufficient to permit enoughcurrent to flow to develop the torque required by theload. At very light loads, or at no load, the currentthrough a universal motor is small. To maintain a smallcurrent through the motor, the counter emf must be highenough so that only a small difference exists betweenthe impressed voltage and the counter emf. The smallcurrent through the motor also results in a weak mag-netic-field flux because it is the current through thefield winding that produces the fl ux. The weakenedmagnetic-field flux tends to make the motor speed in-crease even further to prod uce the high counter emfrequi red to maintain a small motor current. It wouldappear, then, that universal motors should tend to "runaway" at no load. This run-away do~s not occur, how-ever, because motors of this type usually offer enoughfriction and windage loss to limit the maximum attain-able no-load speed to a safe val ue.

When a mechan ical load is attached to a universalmotor, the current through the motor must increase toprovide the increased torque required by the load. Anincrease in the current through the motor requires anincrease in the difference between the impressed vol t-age and the counter emf. This increased difference canonly be brought about by a reduction in counter emfderived from a decrease in speed. For an uncompen-

sated universal motor, the full-load speed is approxi-mately 60 per cent or less of the no-load speed.

The torque developed by a universal motor is adirect result of the magnitude of magnetic-field flux andarmature ClU'rent. For fixed mechanical loads, the start-ing torque of a universal motor is high because thearmature current at starting time is high; at "stall" con-ditions, because of the large armature current, thet0rque is again high. The stall torque of a series motorcan be as high as 10 times the continuous rated torque.

Because torque and armature current influence thespeed of a universal motor, it is possible under certainoperating conditions to vary the impressed voltage andinfluence operating characteristics of the motor. Forincreased mechanical loads, an increase in the impress-ed voltage produces a larger armature current and tendsto keep the speed constant. High starting torque, ad-justable speed characteristics, and small size aredistinct advantages of a universal motor over a com-parably rated single-phase induction motor. Typicalperformance characteristic curves for a universal motorare shown in Fig.2.

Fig.2. Typical performance curves for auniversal motor.

Use of Silicon Controlled Rectifiers for Motor Control

One of the simplest and most efficient means ofvarying the impressed voltage to a load on an ac powersystem is by control of the conduction angle of an SCRplaced in series with the load. Typical curves showingthe variation of motor speed with SCR conduction anglefor both half-wave and full-wave impressed motor volt-ages are illustrated in Fig.3. If desired, a switch maybe installed in the half-wave circuits so that the SCRand its related control circuit can be bypassed for full-power operation.

Holf·Wove Control

There are many good circuits available for half-wave control of universal motors; their attributes andlimitations are described in detail below. The circuitsare divided into two classes; regulating and non-regu-lating. Regulation in this instance implies load sensingand compensation of the system to prevent changes in

Fig.3 • Typical performance curves for a universal motorwith phose-angle control.

motor speed. The type of regulation provided by eachcircuit is stated and compared to other circuits.

The half-wave proportional control circuit shownin FigA is a non-regulating circuit whose function de-pends upon an RC delay network for gate phase-lagcontrol. This circuit is better than simple resistancefiring circuits because the phase-shifting characteristicsof the RC network permit the firing of the SCR beyondthe peak of the impressed voltage, resulting in smallconduction angles and very slow speed.

The control circuit shown in FigA uses the break-down voltage of a neon lamp as a threshold setting forfiring the SCR. The neon lamp is specifically designedfor handling the high-eurrent pulses required to triggerSCR's. When the voltage across capacitor C reachesthe breakdown voltage of the neon lamp, the lamp fires,and C discharges through the lamp to its maintainingvoltage. At this point, the lamp again reverts to itshigh-impedance state. The discharge of the capacitorfrom breakdown to maintaining voltage of the neon lampprovides a current pulse of sufficient magnitude to firethe SCR. Once the SCR has fired, the voltage acrossthe phase-shift network reduces to the forward voltagedrop of the SCR for the remainder of the half-cycle. Therange of conduction angles of this circuit is approxi-mately 30 to 150 degrees. The high breakdown voltage

of the neon lamp improves noise rejection and preventserratic firing of the SCR because of brush noises onthe voltage supply lines. Table I shows componentsfor the circuit of FigA.

*NE·83, 5AH, A057B, or equiv.

Fig.4 • Haff·wave motor control with no regulation.

The circuit shown in Fig.5 reduces spread in gateturn-on characteristics. This circuit depends upon thefast switching characteristics of transistors such asthose used in the two-transistor regenerative triggernetwork shown. The phase-shift characteristics arestill retained to provide conduction angles less than90 degrees through the RC network of R1, R2, and C1.Resistor Ra provides turn-on current to the base of Q1when the voltage across C 1becomes large enough duringthe positive half-cycle. The base current in Q 1 turnson this transistor. Transistor Ql then supplies base

TABLE I· COMPONENTS FOR CIRCUIT SHOWN IN FICA.AC AC F1 CR1 R2 SCR1SUPPLY CURRENT

120 V I A 3 AG, 1.5 A, Quick Act D12018 100 K, 1/2 W RCA·2N3528'120 V 3A 3 AS, 3 A D12018 100 K, 1/2 W RCA-2N3228

120 V 7A 3 AS, 7 A D12018 100 K, 1/2 W RCA·2N3669

240 V IA 3 AG, 1.5 A, Quick Act D1201D 150 K, 1/2 W RCA·2N3529

240 V 3A 3 AS, 3 A D1201D 150 K, 1/2 W RCA·2N3525

240 V 7A 3 AS, 7 A D1201D 150 K, 1/2 W RCA·2N3670

366

+ C,'I"- 25v

current to Q2. When Q2 turns on, it supplies more basecurrent to Ql. This regenerative action leads to therapid saturation of transistors Q 1 and Q2. Capacitor C 1discharges through the saturated transistors into thegate of the SCR. When the SCR fires, the remainingportion of the positive half-cycle of ac power is appliedto the motor. Speed control is accomplished by adjust-ment of potentiometer R 1. With component values asshown on the schematic diagram in Fig.5, the thresholdvoltage for firing the circuit is approximately 8 volts;the maximum conduction angle is approximately 170degrees. Table II shows components for the circuitwith various RCA SCR's.

Fig.6 shows a fundamental circuit of direct-coupledSCR control with voltage feedback. This circuit ishighly effective for speed control of universal motors.The circuit makes use of the counter emf kemD induced

TABLE II - COMPONENTS FOR CIRCUIT SHOWN IN FIG.5.AC AC F1 CR1 R1 SCR1SUPPLY CURRENT

120 V lA 3 AG, 1.5 A, Quick Act 012018 75 K, 1/2 W RCA-2N3528120 V 3 A 3 AB, 3 A 012018 75 K, 1/2 W RCA-2N3228

120 V 7 A 3 AB, 7 A 012018 75 K, 1/2 W RCA·2N3669240 V I A 3 AG, 1.5 A, Quick Act 012010 150 K, 1/2 W RCA-2N3529

240 V 3A 3 AB, 3 A 012010 150 K, 1/2 W RCA-2N3525

240 V 7 A 3 AB, 7 A 012010 150 K, 1/2 W RCA-2N3670

in the rotating armature because of the residual magnet-ism in the motor on the half-cycle when the SCR isblocking.

The counter emf is a function of speed and, there-fore, can be used as an indication' of speer: changes asmechanical load varies. The gate-firing circuit is aresistance network consisting of R1 and Rz. Duringthe positive half-cycle of the source voltage, a fractionof the voltage is developed at the center-tap of thepotentiometer and is compared with the counter emfdeveloped in the rotating armature of the motor. Whenthe bias developed at the gate of the SCR from thepotentiometer exceeds the counter emf of the motor,the SCR fires. AC power is then applied to the motorfor the remaining portion of the positive half-cycle.Speed control is accompl ished by adjustment of poten-tiometer R l' If the SCR is fired early in the cycle, themotor operates at high speed because essentially thefull rated line voltage is applied to the motor. If theSCR is fired later in the cycle, the average value ofvoltage applied to the motor is reduced, and a corres-ponding reduction in motor speed occurs. On the nega-tive half-cycle, the SCR blocks voltage to the motor.The voltage applied to the gate of the SCR is a sinewave because it is derived from the sine-wave line volt-age. The minimum conduction angle occurs at the peakof the sine wave and is restricted to 90 degrees. In-creasing conduction angles occur when the gate biasto the SCR is increased to allow firing at voltage valueswhich are less than the peak value.

At no load and at the low-speed control setting,"skip-cycl ing' operation occurs, and motor speeds areerratic. Because no counter emf is induced in the ar-mature when the motor is standing still, the SCR firesat low bias settings. The motor is then accelerated toa point at which counter emf induced in the rotatingarmature excceds the gatc-firing bias of the SCR andprevents the SCR from firing. The SCR is not able tofire again until the speed of the motor is rcduced (be-cause of friction and windage losses) to a value forwhich the induced voltage in the rotating armature isless than the gate bias. At this time the SCR firesagain: The motor deceleration occurs over a number of

cycles when there is no voltage applied to the motor,(hence the term ·skip cycling").

When a load is applied to the motor, the motorspeed decreases and thus reduces the counter emf in-duced in the rotating armature. With a reduced counteremf, the SCR fires earlier in the cycle and providesincreased motor torque to the load. Fig.6 also showsvariations of conduction angle with changes in counteremf. The counter emf appears as a constant voltageat the motor terminals when the SCR is blocking. Be-cause the counter emf is essentially a characteristicof the motor, different potentiometer settings are re-quired for comparable operating conditions for differentmotors. Circuit values for use with various RCA SCR'sare shown in Table III.

Fig.7 shows a variation of the circuit in Fig.5.The basic difference between the two circuits is thatthe circuit in Fig.7 provides feedback for changingload conditions to minimize changes in motor speed.The feedback is provided by R7' which is in series withthe motor. A voltage proportional to the peak currentthrough the motor is developed across the resistor.This voltage is stored on capacitor Cz through diodeCRz, and is of a polarity that causes the bias on theresistance network ofR3 and R4 to change in accordancewith the load on the motor. With an increasing motor'load, the speed tends to decrease. This decrease inmotor speed causes more current to flow through themotor armature and field windings. When the currentflowing through R7 increases, the voltage stored oncapacitor Cz increases in the positive direction. Thisincrease in capacitor voltage causes the transistors toconduct earlier in the cycle, to fire the SCR, and toprovide a greater portion of the power cycle to themotor. With a decreasing load, the motor current de-creases and the voltage stored by capacitor Cz de-creases. The transistors and SCR then conduct laterin the cycle. The resultant reduction in the averagepower supplied to the motor causes a reduced torque tothe smaller load. Because motor current is a function ofthe motor itself, resistor R7 has to be matched with themotor rating to provide optimum feedback for load com-pensation. Resistor R7 may range from 0.1 ohm for

TABLE III • COMPONENTS FOR CIRCUIT SHOWN IN FIG.6.AC AC Fj CRj, CR2 Rj R2 SCR1SUPPLY CURREIiT

120 V 1 A 3 AG, 1.5 A, Quick Act 012018 5.6 K, 2W I K, 2 W RCA-2N3528

120 V 3 A 3 AS, 3 A 012018 5.6 K, 2W I K, 2 W RCA·2N3228

120 V 7 A 3 AS, 7 A 012018 2.7 K, 4W 500,2 W RCA-2N3669

240 V IA 3 AG, 1.5 A, Quick Acl 012010 10 K, 5W I K, 2 W RCA·2N3529

240 V 3A 3 AS, 3 A 012010 10 K, 5W I K, 2 W RCA-2N3525

240 V 7 A 3 AS, 7 A 012010 5.6 K, 7.5 W 500, 2 W RCA-2N3670

MOTOR

~VOLTAGE

C1 '/VOLTAGE ', ••.•..•,'

GATE CURRENT GATE CURRENTLIGHT LOAD HEAVY LOAD

Fig.7 - Half.wave motor control using two-transistor regenerative triggering with regulation.

larger-size universal motors to 1.0 ohm for smallertypes. Circuit values for use with various RCA SCR'sare shown in Table IV.

Full-Wave Control

This section discusses the application of SCR'sto full-wave motor control. Two SCR's are usually re-quired to provide full-wave control.

A very simple SCR full-wave proportional controlcircuit is shown in Fig.S. Again, ac phase shiftingand neon triggering are used to provide gate phase-angle control; a small pulse transformer is utilized forisolation. The circuit provides a symmetrical outputfor both Iralves of the ac input voltage because the sameelectrical components are used in the phasing networkfor both SCR gates. Because the SCR gate circuits arecompletely isolated from each other, the cross-talkproblem usually associated with gate firing circuitsusing transformer coupling and bi-directional trigger de-

vices is avoided. There is a hysteresis effect associ-ated with this circuit because C1 charges to alternatepositive and negative values. As Rz decreases from

~~~!ALJE~ AMOTOR ,'-&':>,..V /-~

VOLTAGE I ~ ' <<,,VCAPACITOR/"'\. - /"'\.

VOLTAGE~

*NE-83. 5AH. A057B. or equiv.Tl - Better Coil and Transformer

Co. Type 99A16. or equiv.

Fig.8 - Full-wave motor control with no regulation.

TABLE IV - COMPONENTS FOR CIRCUIT SHOWN IN FIG.7.

AC AC Fl CRl R] SCRlSUPPLY CURRENT

120 V IA 3 AG, 1.5 A, Quick Act 012018 75 K, 1/2 W RCA-2N3528

120 V 3A 3 AS, 3 A 012018 75 K, 1/2 W RCA-2N3228

120 V 7A 3 AS, 7 A 012018 75 K, 1/2 W RCA-2N3669

240 V lA 3 AG, 1.5 A, Quick Act D12010 150 K, 1/2 W RCA-2N3529

240 V 3A 3 AS, 3 A D12010 150 K, 1/2 W RCA-2N3525

240 V 7A 3 AS, 7 A 012010 150 K, 1/2 W RCA-2N3670

369

its maximum value, C 1 charges to a higher voltage oneach half cycle. When the positive half-eycle voltageon C 1 reaches the breakdown potential of the neon lamp,the lamp fires, allowing C 1 to discharge to the main-taining voltage of the lamp through CR 1 and the lampinto the gate of SCR2. When SCR2 fires, the voltageacross the control circuit drops to the forward voltageval ue of the SCR, allowing C 1 to discharge. On thenext half-cycle, C 1 charges from a lower positive poten-tial and allows the neon lamp to fire earlier in thecycle. If the potentiometer resistance R2 is increased,the SCR's fire at a reduced conduction angle and thehysteresis effect is produced. On the negative half-cycle, when the charge on C 1 has reached the break-down potential of the neon lamp, the capacitor dischargesthrough CR 2, the lamp, and the primary of transformerT 1 to the maintaining voltage of the neon lamp. Thecurrent pulse formed by the discharge of C 1 is coupledby T 1 into the gate of SCR1. For 60-hertz operation,the transformer characteristics are not critical becausethe magnitude and shape of the current firing pulse aredetermined primarily by the charge on the capacitor andthe characteristics of the neon lamp. Circuit values foruse with various RCA SCR's are shown in Table V.Conduction angles obtained with this circuit vary from30 to 150 degrees; at the maximum conduction angle,the voltage impressed upon the load (universal motor)is approximately 95 per cent of the input rms voltage.

Fig.9 shows a full-wave control circuit that has in-creased conduction-angle capability. Table VI showsthe component chart for use of the circuit with variousSCR's. The threshold point of the transistor circuit canbe changed by varying the value of R3. The phase-shiftnetwork composed of R l' R2, and C 1 permits the varia-tion of conduction angles from minimum to maximum. Anac potential impressed upon th is phase-shifting networkeliminates skip-cycling at low conduction angles. Thebridge network of CR1, CR2, CR3, and CR4 rectifiesthe ac voltage developed across C 1 and provides theswitching transistors with dc voltage. When the switch-ing trans istors are on and saturated, capacitor C 1 dis-charges through them into the primary of T l' Becauseboth SCR's receive the same gate polarity pulse, thepulse formed by C1 and T1 fires that SCR with a posi-

tive potential at the anode. When the SCR fires, theremaining portion of the half-eycle is applied to theload. On the alternate half-cycle, the other SCR turnson. With the component values shown in Fig.9, thethreshold voltage required to fire the transistor circuitis approximately 8 volts. Variations in conductionangle are accomplished by changing the setting of R 2'

In this circuit, the conduction angles may be variedfrom 5 to 170 degrees; this larger range is more de-sirable when higher power is to be controlled.

An SCR full-wave circuit designed for applicationsrequiring feedback for compensation of load changes isshown in Fig.ro. Operation is similar to that of thecircuits discussed previously except that this circuithas full-wave conduction with proportional control.Again, as In the circuit of Fig.7, R7 must be matchedwith the motor rating to provide optimum feedback forload compensation. Resistor R7 may range from 0.1ohm for larger-size universal motors to 1.0 ohm forsmaller types. Table VII gives a component list for useof this circuit with various SCR's.

Ratings and Limitations

Package size and environment limit the voltageand current capabilities and, consequently, the power-dissipation abilities of an SCR. Maximum temperatureratings usually depend on the use of a heat sink of aparticular size at a prescribed ambient or case tempera-ture.

The main cause of heat within an SCR operating at60 hertz is the forward current and voltage drop duringconduction. Under steady-state conditions, the heatgenerated within the device must be balanced by theflow of heat to the heat sink and the ambient air. Ifmore heat is generated within the SCR than can bedissipated by the case and the heat sink, the junctiontemperature increases and forward blocking capabilitiesare lost. Under these conditions the SCR may breakdown thermally in the reverse direction, causing damageto the SCR pellet. An increase in heat-sink size tomaintain the balance between heat generated and heatdissipated assures reliable performance of the SCR.

AC AC F] R] R2 C1 SCR1, SCR2SUPPLY CURRENT

120V 1.5 A 3 AG,2 A, QuickAct I K, II2 W 50 K, II2 W 0.22 JLF, 100V RCA·2N3528120V 5 A 3 AS, 5 A I K, II2 W 50 K, II2 W 0.22 JLF, 100V RCA·2N3228120V lOA 3 AS, 10A I K, II2 W 25 K, 2W 0.47 JLF, 100V RCA·2N3669240 V 1.5 A 3 AG,2 A, QuickAct I K, IW 50 K, 2W 0.22 JLF, 100V RCA·2N3529240V 5A 3 AS, 5 A 1 K, 1W 50 K, 2W 0.22 JLF, 100V RCA·2N3525240 V 10A 3 AS, 10A 1 K, I W 25 K, 4W 0.47JLF, 100V RCA·2N3670

370

R,

"R, R55.6K '50

R2 II2W 1/2W

CR, CR,

TYPE TYPED120lA DI20lA

C,

I,.FIOOV

CR2 CR4

TYPE TYPEDI20lA DI20lA

Fig.9. Full-wave motor control with no regulation in w' ich the conduction onglecan be varied from 5 to 180 degrees.

The current ratings for the circuits using the2N3528 and 2N3529 SCR's are based upon measure-ments made with these devices mounted by their elec-trical leads with the package in free air. The currentratings for the circuits using the other SCR types arebased upon measurements made with the SCR's mountedon an aluminum heat sink having an equivalent dimen-sion of 3 by 3 by 1/16 inches.

The SCR can be mounted on a single-plo.te heatsink or on a metal chassis. In chassis mounting thepackage housing and heat sink can be insulated fromthe chassis by a mica washer, as shown in Fig.1l. Theuse of silicone grease or other similar material betweenthe SCR housing and the heat sink provides a betterthermal contact and more efficient heat dissipation. Ifheat dissipation is critical, a finned heat sink should

TABLE VI • COMPONENTS FOR CIRCUIT SHOWN IN FIG.9.

AC AC F] RZ SCRI, SCRZSUPPLY CURRENT

120 V 1.5 A 3 AG, 2 A, Quick Act 75 K, V2 W RCA-2N3528120 V 5A 3 AS, 5 A 75 K, V2 W RCA-ZN3228120 V lOA 3 AS, 10 A 75 K, V2 W RCA·2N3669240 V 1.5 A 3 AG, 2 A, Quick Act 150 K, V2 W RCA·2N3529240 V 5 A 3 AS, 5 A 150 K, V2 W RCA·2N3525240 V 10 A 3 AS, 10 A 150 K, 1/2 W RCA-2N3670

ACSUPPLY

120 V

120 V

120 V

240 V

240 V

240 V

CR2TYPE

Ol20lA

MOTOR

~VOLT.GE

Cl \ /VOLTAGE " /•../

TABLE VII . COMPONENTS FOR CIRCUIT SHOWN IN FIG.lO.

AC Fl CRl,CR2, R]CURRENT CR3,CR,j

] A 3 AG, 1.5 A, Quick Act RCA-l N 2860

3 A 3 AS, 3 A RCA-l N l202A

7 A 3 AS, 7 A RCA-lNl202A

1 A 3 AG, 1.5 A, Quick Act RCA-l N 2862

3 A 3 AS, 3 A RCA-lNl204A

7 A 3 AS, 7 A RCA-l N 1204A

be used. Heat-sink size may be reduced in any applica-tion if moving air can be provided at the SCR mountingsite.

If a universal motor is operated at low speed undera heavy mechanical load, it may stall and cause heavycurrent flow through the SCR. For this reason, low-speed heavy-load conditions should be allowed to existfor only a few seconds to prevent possible circuitdamage. In any case, fuse ratings should be carefullyobserved and 1imited to the types and val ues indicatedin the tables accompanying the circuits in this Note.

Practical heat sinks, packaging, available fusecharacteristics. and motor overload and stall performancehave been considered and He reflected in the currentratings shown for the circuits in this Note; these cur-rent values should not be exceeded.

50 K, 1/2 W

50 K. 1/2 W

50 K. 1/2 W

100 K, 1/2 W

100K.1/2W

100 K, 1/2 W

RCA-2N3528

RCA·2N3228

RCA-2N3669

RCA-2N3529

RCA·2N3525

RCA·2N3670

Nameplate data for some universal motors are givenin developed horsepower to the load. This mechanicaldesignation can be converted into its electrical currentequivalent through the following procedure.

Internal motor losses are taken into cons iderationby assigning a figure of merit. This figure. 0.5. repre-sents motor operation at 50-per-eent efficiency. and in-dicates that the power input to the motor is twice thepower delivered to the load. With this figure of meritand the input voltage Vac' the rms input current to themotor can be calculated as follows:

mechanical horsepower x 746

0.5 Vac

For an input voltage of 120 volts. the rms input currentbecomes:

universal motors that have calculated rms current ex-ceeding the values given in the tables. The circuitswill accommodate universal motors with ratings up to3/4 horsepower at 120 volts input and up to 1-112 horse-power at 240 volts input.

For an input voltage of 240 volts. the rms input currentbecomes:

[Kl(]3LJDSolid StateDivision


AN-3551

Circuit Factor Chartsfor RCA Thyristor Applications

(SCR's and Triacs)by

B. J. Roman and J. M. Neilson

In the design of circuits using thyristors (SCR's andtriacs). it is often necessary to determine the specificvalues of peak, average, and rms current flowing throughthe device. Although these values are readily determinedfor conventional rectifiers, the calculations are moredifficult for thyristors because the current ratios becomefunctions of both the conduction angle and the firingangle of the device.

This Note presents charts that show several currentratios as functions of conduction and firing angles forsome of the basic SCR and triac circuits. Examples aregiven of the use of these charts in the design of half-wave, full-wave ac, full-wave dc, and three-phase half-wave circuits using RCA thyristors. Current and voltagewaveforms for the various circuits are also included, aswell as curves of per-cent ripple in load current andvoltage.

Current. Ratio Curves

Figs. 1, 2, and 3 show current-ratio curves for asingle-phase half-wave SCR circuit with resistive load,a single-phase SCR or triac full-wave circuit with resis-tive load, and a three-phase half-wave SCR circuit withresistive load, respectively. These curves relate averagecurrent Iavg' rms current Irms' and peak current Ipk to areference current 1

0, This reference current 1

0is a con-

stant of the circuit equal to the peak source voltage Vpkdivided by the load resistance RL; it represents themaximum value that the current can obtain and corre-sponds to the peak of the sine wave. The peak currentIpk is the current which appears at the thyristor during

its period of forward conduction. For conduction anglesgreater than 90degrees, Ipk is equal to 1

0; for conduction

angles smaller than 90 degrees, Ipkis smaller than 10,

The curves of Figs. 1, 2, and 3 can be used in anumber of ways to calculate desired current values. Forexample, they can be used to determine the peak or rmscurrent in a thyristor when a specified average currentis to be delivered to a load during a given part of theconduction period. It is also possible to work backwardsand determine the necessary period of conduction to main-tain a specified peak-to-average current ratio in a par-ticular application. Another use is the calculation ofrms current at various conduction angles when it is nec-essary to determine the power delivered to a load, orpower losses in transformers, motors, leads, or bus bars.Although the curves represent device currents, they areequally useful for calculation of load current and voltageratios.

For use of these curves, it is first necessary toidentify the unknown or desired parameter. The valuesof the parameters fixed by the circuit specifications arethen determined, and the appropriate curve is used toobtain the unknown quantity as a function of two of thefixed parameters. Examples of the use of the curves aregiven to illustrate their versatility.

In the single-phase half-wave circuit shown in Fig. 4,an SCR is used to control power from a sinusoidal ac sourceof J 20 volts rms (170 volts peak) into a 2.8-ohm load. Thisapplication requires· a load current which can be varied from2 to 25 amperes. It is necessary to determine the range ofconduction angles required to obtain this range of load current.

DEFINITIONS:1= 10 sin8c (OO~8c~t800)

IOVg=t;Io~CId8

7 - SCR current ratios for single-phase, half-waveconduction with resistive load.

The reference current 10

is first calculated, asfollows:

The ratio of rms current I to I is then calculatedrms 0

for the maximum and minimum load-current requirements,as follows:

Fig. 2 - SCR or triac current ratios for single-phase, full-wave conduction with resistive load.

Fig. 3 - SCR current ratios for three-phase half-wavecircuit with resistive load.

The conduction angles corresponding to the ratios canthen be determined by use of curve 3 in Fig. 1:

ec max = 1060

ec min = 150

Full-Wave AC Triac Circuit

Fig. 5 shows a circuit in which a triac is used to controlthe power to a 20-ohm resistive load. It is desired to findthe range of conduction angles the gate circuit must becapable of supplying to provide continuous variation inload power between 5 and 97 percent of the full power whichthe load could dra;-v.

~$~'VV'v20 OHMS

Full power P is given by

V 2 1202p=~

RL 20

Therefore, the 5- and 97-per-cent power points are asfollows:

Ps : 36 watts

P 97 : 698 watts

The rms current corresponding to each point is given by

IS J P s/RL : V 36/20 : 1.3 amperes rms

The reference current 10

is determined as follows:

120 xV220 8.5 amperes

The current ratios for the 5- and 97-per-cent power levelsthen become

at 5%, I,ms/Io : 1.3/8.5 (amperes) : 0.153

at 97%, I,ms/Io : 5.9/8.5 (amperes) : 0.695

Because the circuit shown in Fig. 5 is a full-wave cir-cuit, the calculated current ratios are used in curve 3 ofFig. 2 to determine the required conduction angles:

Thus, the load power is continuously variable from 5 to97 per cent of full load if the gate circuit is constructedso that the conduction angle can be varied between 35and 150 degrees. This variation is within the rangewhich can be obtained with a simple trigger-diode typeof gate circuit.

Full-Wave DC SCR or Triac Circuit

Fig. 6 shows several different SCR circuits and atriac circuit which can be used to supply a constant dcoutput to a variable load resistance with an ac input of64 volts rms. It is desired to determine the variation in

conduction angle required to maintain the average loadcurrent at a constant value of 30 amperes while the loadresistance varies between 0.12 and 1.80 ohms.

The reference currents are calculated for maximumand minimum values of load resistance, as follows:

: V peak

RL .mln

64 V2__750 amperes

0.12

DEVICE DEVICEVOLTAGE \ /CURRENT

__ /_/_-_t\ /h..-\ .•... _ ..."'} \,-"",,/ '

8lftCAj IN249C!I ',_y/-f\,]/-~

Fig. 6 - Typical current and voltage waveforms for single-phase, full-wave thyristor circuits with resistive load.

64 Vi__50 amperes

1.80

The ratios of lavg to 10

for an average load current of 30amperes are then calculated as follows:

The conduction angles corresponding to these two ratioscan then be obtained from curve 5 in Fig. 2:

DEVICE VOL rAGE85V PEAK FORWARD,147 V PEAKREvERSE

Fig. 7 shows a three-phase, half-wave circuit that usesthree SCR's. In this application, the firing angle can bevaried continuously from 30 to 145 degrees. It is desiredto determine the resulting variation in the attainable loadpower. Current and voltage waveforms for SCR's in three-phase, half-wave circuits are shown in Fig. 8.

Again, the reference current 10

is calculated first,as follows:

VLpeak 85 __28 amperes

RL 3

Current ratios at the extremes of the firing range aredetermined from Fig. 3. For the specified firing angles,the current ratios are given by

DEVICEVOLTAGEWAVEFORMFOR BF:45°

Fig. 8 - Typical current and voltage waveforms for three-phase, hoff-wave SCR circuit with resistive load.

I,ms = 0.49 for I3f

300

Io

These ratios, together with the reference current, arethen used to determine the range of rms current in theSCR's, as follows:

I,ms max = (0.49) (28) = 13.7 amperes

I=s min = (0.06) (28) = 1.7 amperes

In this type of circuit, the rms load current is equalto the rms SCR current multiplied by the square root ofthree. The load power P, therefore, is given by

The range of load power can then be determined asfollows:

In other words, the load power can be varied continuouslyfrom 27 to 1700 watts.

Per-Cent Ripple in Lood

The choice of a rectifier circuit for a particularapplication often depends on the amount of rectifier"ripple" (undesired fluctuation in the dc output caused

by an ac component) that can be tolerated in the appli-cation. Fig. 9 shows per-cent ripple in load currentand voltage for single-phase half-wave, single-phasefull-wave, and three-phase half-wave thyristor circuits.

o \' "- Ir SINGLE-PHASE, HALF -WAVEf-- -

tJr/INGLE-PHASE, FULL-WAVE f-- -o \ \. ~ THREE - PHASE. HALF -WAVE

"\ '-{1/ .........CD0 "< ....•.... -

r---... .........~ -;--1-I- -0

.........® .........

0

0YRMS RIPPLE 2 .jI/RMS2 -VAVG2

0 \.(VRMS RIPPLE)-t. RIPPLE" VAIIG 1.100 0/.

0 I ,I I I I

~ 30

cr 20~~0. '0ir

B

" "".5 60 75 90 105 120 135 150 165 ISOCONDUCTION ANGLE (Bel-DEGREES

I I I I I I I I I I I ! I

ISO 165 150 135 '20 105 90 75 60 45 30 15 0FIRING ANGLE (8fl-DEGREES

Fig. 9 - Output ripple in thyristor circuits as a functionof conduction and firing angles.



AN-3659

Application of RCA Silicon RectifiersTo Capacitive Loads

When rectifiers are used in capacitive-load circuits,the rectifier current waveforms may deviate consider-ahly from their true sinusoidal shape. This deviationis most evident for the peak-to-average current ratio,which is somewhat higher than that for a resistive load.Because of the variation in current wavesh<lpes, cal-culations of ratings for capacitive-load circuits are gen-erally more complicated and time-consuming than thosefor resistive-load rectifier circuits.

This Note describes a simplified rating systemwhich allows designers to calculate the characteristicsof capacitive-load rectifier circuits quickly and ac-curately. The effect of the addition of a series limitingresistance to such circuits and the importance of theratio of the limiting resistance to capacitive reactanceare described, and curves of rectifier current ratios arepresented as functions of the effective ratio. Typicaldesign examples are given, and output-ripple consider-ations are discussed. Table I defines the symbols usedin the equations and calculations.

Design of Capacitor-Input Circuits

In the design of a rectifier circuit, the output vol-tage and current, the input voltage, and the ripple andregulation requirements are usually specified. The trans-former and the type of rectifier to be used are selectedby the designer, and the load resistance is determinedon the basis of the output voltage and current require-ments. The ripple requirements are satisfied by use ofa capacitor to shunt the load RL, as shown in Fig. 1.The waveforms for this circuit indicate that the voltageacross the capacitor F." coincides with the supply vol-tage E when the rectifier is conducting in the forwarddirection. A high initial diode surge CUlTent IS occursbecause the capacitor acts as a short circuit whenpower is first applied. The diode turns off at the peak

E sinsusoidal input voltage (E = Eo sin u;t)

Eo peak input voltage

Eavg average output vol tage

input frequency (Hz)

u; angular frequency of input (u; = 2 1Tf radiansper second)

time counted from beginning of cycle

RS limiting resistance

RL load resistance

C load capacitance

10 absolute peak current through rectifier

Ipk actual peak current through rectifier

Irms root-mean-squafe current through rectifier

Iavg average current through rectifier

n charge factor; 1 for half-wave circuit, Y2 fordoubler circuit, 2 for full-wave circuit

of the curve (pointO), and remains off until EC is againequal to E (point A). The turn on point ton is determin-ed by the time constant RL C, and affects the average,peak, and rms currents through the device.

As stated above, the low forward voltage drop ofsilicon rectifiers may result in a very high surge of cur-rent when the capacitive load is first energized. Al-though the generator or source impedance may be high

Fig.! - Circuit showing use of capacitor to shuntthe load, and resulting waveforms.

enough to protect the rectifier, in some cases addition-al resistance must be added to the generator-rectifier-capacitor loop, as shown in Fig.2, to keep the surgewithin device ratings. The waveforms in Fig.2 showthat the capacitor voltage EC is no longer coincidentwith the steady state supply voltage E during any partof the cycle. The sum of the additional limiting resis-tance plus the source resistance is referred to as thetotal limiting resistance RS' The ratio of RS to cap-acitive reactance 11 wC is an important considerationin capacitor-input rectifier circuits; ideally, RS shouldbe much smaller than 11 ",C. The magnitude of RS re-quired in a particular circuit is calculated as describedbelow.

Calculation of Limiting ResistanceThe value of resistance required to protecl the rec-

tifier is calculated from the surge rating chart for lheparticular device used. Fig. 3 shows surge rating chartsfor diffused junction slack rectifiers CR I and CR2.Each point on the curves defines a surge rating by in-dicaling the maximum time for which the device cansafely carry a specific value of rms current.

With a capacitive load, maximum surge current oc-curs if the circuit is switched on when the input voltageis near its peak value. When the time constant RSC ofthe surge loop is much smaller than the period of the

Fig.2 - Circuit showing addition af limiting resis-tance, and resulting waveforms.

8 " '<6 " "4

~z-........ <14, ~

~~ <1~-<>r--- J'\1q/ ~ 1<

8q

6r-... "" SURGE RATING FOR-1-.1." "'"

CR24

SURGE RATING FOR/" ~"'" -:c

CRI "-z .•..•.1\. ~ '"::::--....

8

"-6

" ....•.4

~Z "'"I "

<Il...0:...~IOO

""~z...0:0:::><>...'"0:::> 10<Il

<Il,.0:

Fig.3 - Surge-rating chart used for calculation oflimiting resistance.

input voltage, the peak current is equal to the peak in-put voltage Eo divided by the limiting resistance Rs'and the resulting surge Is approximates an exponentiallydecaying current with the time constant RSC,as follows:

IS = (Eo/RS) exp (-1IRSC) (1)

AN-3659 ----------------------------------proxlmated by the following equations:

The values for Eo and C specified by the circui tdesign are used in Eq. (3) to obtain an equation whichrelates the nns surge current lrms to surge duration t.This equation may then be plotted on the surge ratingchart. Because RsC is equal to t, any given value ofRs defines a specific time t, and hence a specific pointon the plot of Eq.(3l. However, RS must be large enoughto make this point fall below the rating curve.

The following examples illustrate the proceduredescribed for calculating the limiting resistance re-quired in a particular circuit.

Example No.1: Fig. 4 shows a half-wave rectifier cir-cuit that has a 6o-Hz frequency and a peak input voltageEo of 4950 volts. The values of Eo and C are substi-tuted in Eq.(3) to obtain the value of Irmst, as follows:

~mst = 0.7 (4950) (2.5 x 10 -6)

Irms t = 0.0086

This value is then plotted on the surge-rating chartof Fig. 3 and is found to intersect the CR J ratingcurve at 2.7 x 10-4 second. The minimum limiting re-sistance which affords adequate surge protection is thencalculated as follows:

RSC 22.7 x 10-4

RS 2. 2.7 x 10 -4 - 108 ohms2.5 x 10-6

Because the value given for RS is 150 ohms, the circuithas adequate surge-current protection for the rectifiers.

Fig.4 - Half-wove rectifier circuit (E = 3500 V rms,Eo = 3820 V, f = 60 Hz).

Irms t = 0.0266

This value is then plotted on Fig.3 and intersectsthe CR2 rating curve at 5.4 x 10-4 second. Therefore,the equation for the time constant is given by

RSC 2. 5.4 x 10-4

R > 5Ax 10-4

S- 10-5

100 C IOfo'FOHMS EpEAK

50000 RLOHMS

100IOflFOHMS

Fig.5. Voltage-doubler rectifier circuit (EEo = 3820 V, f = 60 Hz).

Calculation of Rectifier Current

The design of rectifier circuits using capacitiveloads often requires the determination of rectifier cur-rent waveforms in terms of average, nns, and peak cur-rents. These waveforms are needed for calculations ofcircuit parameters, selection of components, and match-ing of circuit parameters with rectifier ratings. Actualcalculation of rectifier current is a rather lengthy pro-cess. A much more direct process is to use the current-relationship charts shown in Figs. 6 and 7. Thesecurvescan be readily used to find peak or nns current if theaverage current is known, or vice versa.

The ratios of peak-ta-average current and rms-to-average current are shown in Fig. 6 as functions of thecircuit constants nu;CRL and RS/nRL. The quantitywCRL is the ratio of resistive-to-capacitive reactancein the load, and the quantity RS/RL is the ratio of lim-iting resistance to load resistance. The factor n is re-ferred to as the "charge factor" and is simply a multi-plier which allows the chart to be used for variouscircuit configurations. It is equal to unity for half-wavecircuits, \6 for doubler circuits, and 2 for full-wave cir-cuits. (These values actually represent the relativequantity of charge delivered to the capacitor on eachcyclel.

10

J]I

10'

nwCRLI 10 10 10

lJi1fItI301008

l""o-I I6

4 %Rs/nRL=O.02

2

8..14

2

I . , , 2 , 6 82 6 8 2 .8 2 6 8

Fig.6 - Relation of peak, average, ond rms rectifiercurrents in capacitor-input circuits.

In many silicon rectifier circuits, RS may be com-pletely neglected when compared with the magnitude ofRL. In such circuits, the calculation of rectifier cur-rent is even more simplified by the use of Fig. 7, whichgives current ratios under the limitation that RS/RL ap-proaches zero. Even if this condition is not fully sat-isfied, the use of Fig. 7 merely indicates a higher peakand higher rms current than will actually flow in the cir-cuit; as a result, the rectifiers will operate more con-servatively than calculated. This simplified solutioncan be used whenever a rough approximation or a quickcheck is needed on whether a rectifier will fit the ap-plication. When more exact information is needed, Fig.6should be used.

I 10-1 4 6 8 I 4 6 ~o 4 68102 2 4 68103 2 4 68104

EFFECTIVE RATIO OF RESISTIVE TO CAPACITIVE IMPEDANCE(n •••CRl

Fig.7 - Forward-current ratios for rectifiers in cap-acitor-input circuits in which the limiting

resistance is much less than 71 (,;c.

Average output voltage Eavg is another importantquantity because it can be used to find average outputcurrent. The relations between input and output vol tagesfor half-wave, voltage-doubler, and full-wave circuits

are given in Figs. 8,9, and 10, respectively. Outputripple is shown in Fig. 11 for all three circuits. Al-though these curves were originally calculated for vac-uum-tube rectifiers, they are equlllly applicable to sili-con rectifier circuits.

100

80....

~ 70Uw;:; 60'i'"-~ 50"r'"fi' 400w

30w

" 20

10

001

Fig.8 - Relation of applied alternating peak voltageto direct output voltage in half-wave cap-

acitor.input circuits.

200

180....Su

'"U 160

"z1il=>0

140'"I"'"~0

120>

'"fi'0w,

100

"'"

80

Fig.9 - Relation of applied alternating peak voltageto direct output voltage in capacitor-input

voltage doubler circuits.

0.050.5 01I

2

68

1012,515

% RS/RL~ 20

Fig. 10 - Relation of applied alternating peak voltageto direct output voltage in full-wave cap-

acitor-input circuits.

PARAMETER

~

A":'5s,'RL::iO-iO

, ----30, ---0.1

~-'IO.-01--10-~IO__ 3D

A

ow!10_

~~w

&0'~ 1

~o

The following examples illustrate the use ofFigs.8through 11 in rectifier-current calculations. Both exactand approximate solutions are given for each example.

Example No.3: For the half-wave circuit of Fig. 4,the resistive-to-capacitive reactance is found to be:

w CRL = (2 n )(60) (2.5 x 10-6) (200,000)

w CRL = 189

Exact solution using Fig. 6: The ratio <:i Rs to RL

must first be calculated as follows:

The values given above are then plotted in Fig. 8 todetermine average output voltage and average outputcurrent, as follows:Eavl Eo 98%

Eavg W.98) (4950) 4850 volts

Iavg = Eavl RLIavg = 4850/200,000 = 24.2 milliamperes

This val ue of Iavg is then substituted in the ratio ofIrmllavg obtained from Fig. 6, and the exact value ofrms current in the rectifier is determined, as follows:

Irml Iavg 4.4

Irms (4.4) (24.2) = 107 milliamperes

Simplified solution using Fig. 7: Average output cur-rent is approximately equal to peak input voltage dividedby load resistance, as given by

Iavg E/RLIavg 4950/200,000 = 24.7 milliamperes

This value of Iavg is then substituted in the ratio ofIrms/lavg obtained from Fig. 7 and the approximate rmscurrent is determined,. as follows:

Irms/lavg = 5.7

Irms = (5.7) (24.7) = 141 milliamperes

Example No.4: For the doubler circuit of Fig. 5, theresistive-to-capacitive reactance is determinedasfollows:

wCRL = (2 n) (60) (10-5) (50,000)

u; CRL = 189

n u; CRL '" 94

Exact solution: The ratio of Rs to RL is determined asfollows:

~_ 100 x 100%% RL - 50,000

This percentage is then used in conjunction with Fig. 9,and Eavg and Iavg are determined as follows:

Eav/Eo 186%

Eavg (1.86) (3820) 7100 volts

Iavg = Eav/RL

Iavg = 7100/50,000 = 142 milliamperes

The values given above are then plotted in Fig. 6, andthe rms current is calculated as follows:

Irmllavg = 3.7

Irms = (3.7) (142) = 525 milliamperes

Simplified solution: The average output current is givenby

lavg = 2E/RL

Iavg = (2 x 3820)/50,000 = 153 milliamperes

This value is then plotted in Fig. 7, and the rms cur-is determined as follows:

Irm/Iavg = 4.8

Irms = (4.8) (153) = 734 milliamperes

As previously noted, the simplified solution in both ex-amples predicted a higher rms current than the actualvalue: about 32 per cent higher in Example No. 3 and40 per cent higher in Example No.4. The amount oferror involved depends on both UJ CRL and Rs/RL.

In most technical data for rectifiers, the current-versus-temperature ratings are gi ven in terms of averagecurrent for a resistive load with GO-Hz sinusoidal inputvol tage. However, when the ratio of peak-to -averagecurrent becomes higher (as with capacitive loads),j unction heating effects become more and more depend-ent on rms current rather than average current. There-fore, the capacitive-load ratings should be obtainedfrom a curve of rms current as a function of tempera-ture. The average current-rating curves for a sinusoidalsource and resistive load may be converted to rms-rat-ing curves simply by multiplying the current axis by

1.57 because this value is the ratio of rms-ta-averagecurrent for such service (as shown by Irm/Iavg at lowu;CRL in Figs. G and 7). An example of this conversionis shown in Fig. 12 for the rating curves of seven stackrectifiers.

The following examples illustrate the use of therms current ratings.

Example No.5: For the half-wave circuit of Fig. 4, itwas found in Example No.3 that the actual rms currentin the rectifier is 107 milliamperes. The rms ratingcurvein Fig. 12 shows that the CR7 may carry up to 107 mil·liamperes at ambient temperatures up to 1150C.

Example No.6: For the doubler circuit of Fig.5, the ac-tual rms current was determined to be 525 milliamperes.The !'Ins rating curve for the CR6 in Fig. 12 showsthat the circuit may be operated up to 880 C ambienttemperature.

Example No.7: If the higher values of TInS currentgiven by the simplified solution are used instead of theactual currents, the rms rating curves of Fig. 12 alsogive more conservative ratings because they predict alower value for the maximum permissible ambient temp-erature. For example, for the half-wave circuit the ex-act rms current was found to be 107 milliamperes, andthe approximate value was 141 milliamperes. Thesecurrent values correspond to a maximum ambient temp-erature rating of 1150C by the exact solution and 1100Cby the approximate solution.

«E11000

I-zOJ~ 800::>u

~ 600«'"OJ

~ 400

"::>~ 200x«" 0

-80 -60 -40 -20 0 20 40 60 80 100AMBIENT TEMPERATURE-oC

CR'CR2

CR'

CR4

CR5CR6

1CR7

1600 ~

1400~z1200 ~

1000 a800 ~

600 ~

"400 x«

200 "o

140

Fig. 72 - Current as a function of temperature farsilicon rectifier stacks.

by

J. V. YONUSHKA

In the control of ac power by means of semiconductordevices. emphasis has been placed upon limiting the com-plexity of the circuits involved, the cost of the system, andthe over-all package size. With the development of thebidirectional triode thyristor, commonly known as thetriac, all of these goals can be achieved. A triac can per-form the functions of two SeR's for full-wave operationand can easily be triggered in either direction to simplifygate circuits. Because they are rated for 120-volt and 240-volt line operation, triacs are readily adaptable for thecontrol of power to any equipment being operated directlyfrom ac power lines. When used for ac power control,triacs add new functions to many designs. improve per-formance. and provide maximum efficiency and high relia-bility. This Note describes triac operating characteristicsand provides guidance in the use of triacs for specificapplications.

Principal Voltage-Current Characteristic Diagram

Fig. I shows the principal voltage-current characteristicof a triac. This curve shows the current through the triacas a function of the voltage applied between main terminalsNos. I and 2. In quadrant I, the voltage on main terminalNo. 2 is positive with respect to main terminal No. I; inquadrant III. the voltage on main terminal No.2 is nega-tive with respect to main terminal No. I. When a positivevoltage is applied to main terminal No.2, as shown by thecurve iJl quadrant I, a point is reached, called the break-over voltage V BO, at which the device switches from ahigh-impedance state to a low-impedance state. The cur-rent can then be increased through the triac with only asmall increase in voltage across the device. The triac re-mains in the ON state until the current through the mainterminals drops below a value, called the holding current,which cannot maintain the breakover condition. The triac

then reverts again to the high-impedance or OFF state.If the voltage across the main terminals of the triac isreversed, the same switching action occurs as shown bythe curve in quadrant III. Thus, the triac is capable ofswitching from the OFF state to the ON state for eitherpolarity of voltage applied to the main terminals.

QUADRANT mMAIN TERMINAL 2NEGATIVE

ONSTAT[/

Gate Characteristics

When a trigger current is applied to the gate terminalof a triac, the breakover voltage is reduced. After the triacis triggered, the current flow through the main terminals isindependent of the gate signal and the triac remains in theON state until the principal current is reduced below the

holding-current level. The triac has the unique capability ofbeing triggered by either a positive or a negative gate signalregardless of the voltage polarity across the main terminalsof the device. Fig. 2 illustrates the triggering mechanismand current flow within a triac. The gate trigger polarity isalways referenced to main terminal No. I. The potentialdifference between the two terminals is such that gatecurrent flows in the direction indicated by the dottedarrow. The polarity symbol at main terminal No.2 is alsoreferenced to main terminal No. I. The semiconductormaterials between the various junctions within the pelletare labeled p and n to indicate the type of majority-carrier concentrations within the material.

For the various operating modes, the polarity of thevoltage on main terminal No.2 with respect to main ter-minal No. I is given by the quadrant in which the triacoperates, (either I or Ill) and the polarity of the gate signalused to trigger the device is given by the propcr symbolnext to the operating quadrant. For the I (+) operatingmode, therefore, main terminal No.2 and the gate are bothpositive with respect to main terminal No. I. Initial gatecurrent flows into the gate terminal, through the p-typelayer, across the junction into the n-type layer, and ".Jutmain terminal No. I, as shown by the dotted arrow. Asgate current flows, current multiplication occurs and theregenerative action within the pellet switches the triac to itsON state. Because of the polarities indicated between themain terminals, the principal current flows through thepnpn structure as shown by the solid arrow. Similarly, forthe other three operating modes, the initial gate currentflow is shown by the dotted arrow, and principal currentflow through the main terminals is shown by the solidarrow.

Because the principal current influences the gate triggercurrent, the magnitude of the current required to triggerthe triac differs for each mode. The operating modes inwhich the principal current is in the same direction as thegate current require less gate trigger current, while modesin which the principal current is in opposition to the gatecurrent require more gate trigger current.

Like many other semiconductor parameters, the magni-tude of the gate trigger current and voltage varies with thejunction temperature. As the thermal excitation of carrierswithin the semiconductor increases, the increase in leakagecurrent makes it easier for the device to be triggered by agate signal. Therefore, the gate becomes more sensitive in alloperating modes as the junction temperature increases.Conversely, if the triac is to be operated at low tempera-tures, sufficient gate trigger current must be provided toassure triggering of all devices at the lowest operatingtemperature expected in any particular application. Varia-tions of gate trigger requirements are given in the datasheets for individual triacs.

Because the light output of an incandescent lamp de-pends upon the voltage impressed upon the lamp filament,changes in the lamp voltage vary the brightness of thelamp. When ac source voltages are used, a triac can beused in series with an incandescent lamp to vary the volt-age to the lamp by changing its conduction angle; Le.,the portion of each half cycle of ac line voltage in whichthe triac conducts to provide voltage to the lamp filament.The triac, therefore, is very attractive as a SWitching ele-ment in light-dimming applications.

To switch incandescent-lamp loads reliably, a triac mustbe able to withstand the inrush current of the lamp load.The inrush current is a result of the difference betweenthe cold and hot resistance of the tungsten filament. Thecold resistance of the tungsten filament is much lower thanthe hot resistance. The resulting inrush current is approxi-mately 12 times the normal operating current of the lamp.

The simplest circuit that can be used for light-dimmingapplications is shown in Fig. 3 and uses a trigger diodein series with the gate of a triac to minimize the variationsin gate trigger characteristics. Changes in the resistance inseries with the capacitor change the conduction angle ofthe triac.

The capacitor in the circuit of Fig. 3 is chargedthrough the control potentiometer and the series resistance,The series resistance is used to protect the potentiometerpotentiometer is at its minimum resistance setting. Thisresistor may be eliminated if the potentiometer can with-stand the peak charging current until the triac turnson. The trigger diode conducts when the voltage on thecapacitor reaches the diode breakover voltage. The capaci-tor then discharges through the trigger diode to produce acurrent pusle of sufficient amplitude and width to triggerthe triac. Because the triac can be triggered with either

120VACOR

240VAC60 Hz

J 20VAC, 60Hz 240VAC, 60Hz

R, 200k!1, Y2W 250kll,lWR, 3.3kfl. If2W 4.7kn, If2W

C, O.lpF,200V O.lpF,400VC, O.lpF,lOOV O.lpF,lOOV

V, T2800B T2800D

V2 D3202U D3202U

polarity of gate signal. the same operation occurs on theopposite half-cycle of the applied voltage. The triac, there-fore, is triggered and conducts on each half-cycle of theinput supply voltage.

The interaction of the RC network and the trigger dioderesults in a hysteresis effect when the triac is initially trig-gered at small conduction angles. The hysteresis effect ischaracterized by a difference in the control potentiometerselling when the triac is first triggered and when the circuitturns off. Fig. 4 shows the interaction betwecn the RCnetwork and the trigger diode to produce the hysteresiseffect. The capacitor voltage and the ac line voltage areshown as solid lines. As the resistance in the circuit isdecreased from its maximum value, the capacitor voltagereaches a value which fires tlle trigger diode. This point isdesignated A on the capacitor-voltage wave-shape. Whenthe trigger diode fires, the capacitor discharges and triggersthe triac at an initial conduction angle 8,. During the form-ing of the gate trigger pulse, the capacitor voltage dropssuddenly. The charge on the capacitor is smaller than whenthe trigger diode did not conduct. As a result of the differ-ent voltage conditions on the capacitor, the breakovervoltage of the trigger diode is reached earlier in the nexthalf-cycle. This point is labeled point B on the capacitor-voltage waveform. The conduction angle 8" corresponding topoint B is greater than 8,. All succeeding conduction angles

Fig. 4 - Waveforms showing interaction of controlnetwork and trigger diode.

are equal to 82 in magnitude. When the circuit resistance isincreased by a change in the potentiometer selling the triacis still triggered, but at a smaller conduction angle. Eventu-ally, the resistance in series with the capacitance becomesso great that the voltage on the capacitor does not reachthe breakover voltage of the trigger diode. The circuit thenturns off and does not turn on until the circuit resistanceis again reduced to allow the trigger diode to be fired.The hysteresis effect makes the voltage load appear muchgreater than would normally be expected when the circuitis initially turned on.

The hysteresis effect can be reduced by use of a resistorin series with the trigger diode and gate, as shown in Fig. 5.The series resistor slows down the discharge of the capaci-tor through the trigger diode. Consequently, the capacitordoes not lose as much charge while triggering the triac, andproduces a smaller hysteresis effect. As a result of theslower capacitor discharge through the trigger diode, how-ever, the peak magnitude of the gate trigger current pulseis reduced. The size of the trigger capacitor may have tobe increased to compensate for the reduction of the gatetrigger current pulse.

120 VACOR

rv 240VAC60 Hz

120VAC, 60Hz

3.3kQ, V'lW

200H}, V'lW

O.1,uF,200V

T2800B

D3202U

240VAC, 60Hz

4.7kf!. lf2W

250kll,lWO.lpF,400VT2800D

D3202U

Fig. 5 - Single-time-constant light-dimmer circuit withseries gate resistor.

The double-time-constant circuit in Fig. 6 improves orlhe performance of the single-time-constant control cir-cuit. This circuit uses an additional RC network to extendthe phase angle so that the triac can be triggered at smallconduction angles. The additional RC network also mini-mizes the hysteresis effect. Fig. 7 shows the voltage wave-forms for the ac supply and the trigger capacitor of thecircuit of Fig. 6. Because of the voltage drop across R3,the input capacitor C" charges to a higher voltage thanthe trigger capacitor C:,. When the voltage on C3 reachesthe brea1<over voltage of the trigger diode, the diode con-ducts and causes the capacitor to discharge and producethe gate current pulse to trigger the triac. After the triggerdiode turns off, the charge on C3 is partially restored by

120VAC, 60Hz

2.2kU, Y,Wl00kU, Y,WO.1I'F,200VT28008D3202U

240VAC, 60Hz

3.3kU. Y,W200kU,lWO.1I'F.400VT2800DD3202U

Fig. 7 - Voltage waveforms of double·time-constantcontrol circuit.

the charge from the input capacitor C2. The partial restora-tion of charge on C3 results in better circuit performancewith a minimum of hysteresis.

For applications requiring a light-activated circuit, suchas outdoor lights or indoor night lights, the circuit shown inFig. 8 can be employed. Although this circuit functionsin the same manner as the light-dimming circuit, thephotocell controls its operation. When the light impingeson the surface of the photocell, the resistance of the photo-cell becomes low and prevents the voltage on the triggercapacitor from increasing to the breakover voltage of thetrigger diode. The circuit is then inoperative. When thelight source is removed, the photocell becomes a highresistance. The voltage on the trigger capacitor then in·creases to the breakover voltage of the trigger diode andcauses the diode to fire. The trigger pulse formed by thecapacitor discharge through the trigger diode makes thetriac conduct and operates the circuit. The triac continuesto be triggered on each half-cycle and supplies power tothe load as long as the resistance of the photocell is high.When light again impinges on the surface of the photocell

120 VACOR

240 VAC60Hz

J 20VAC, 60Hz

15kU,2W

240VAC,60Hz

30kU.3W

and reduces its resistance, the voltage on the capacitor canno longer reach the breakover voltage of the trigger diode,and the circuit turns off.

For applications requiring operation when light im-pinges on the surface of the photocell, the circuit of Fig. 9is recommended. In this circuit, low resistance of thephotocell allows the triac to be triggered on. When light isremoved from the photocell the increased resistance of thephotocell prevents the triac from being triggered andrenders the circuit inoperative.

Radio Frequency Interference

The fast switching action of triacs when they turn oninto resistive loads causes the current to rise to the instan-taneous value determined by the load in a very short periodof time. This fast switching action produces a current stepwhich is largely composed of higher-harmonic frequenciesthat have an amplitude varying inversely as the frequency.In phase-control applications, such as light dimming, thiscurrent step is produced on each half-cycle of the inputvoltage. Because the switching occurs many times a second.a noise pulse is generated into frequency-sensitive devices

such as AM radios and causes annoying interference. Theamplitude of the higher frequencies in the current step isof such low levels that they do not interfere with televisionor FM radio.

There are two basic types of radio-frequency interference(RFI) associated with the switching action of triacs. Oneform, radiated RFI, consists of the high-frequency energyradiated through the air from the equipment. In most cases,this radiated RFI is insignificant unless the radio is locatedvery close to the source of the radiation.

Of more significance is conducted RFI which is carriedthrough the power lines and affects equipment attachedto the same power lines. Because the composition of thecurrent waveshape consists of higher frequencies, a simplechoke placed in series with the load slows down the cur-rent rise time and reduces the amplitude of the higherharmonics. To be effective, however, such a choke must bequite large. A more effective filter, and one that has beenfound adequate for most light-dimming applications isshown in Fig. 10. The LC filter provides adequate atten-uation of the high-frequency harmonics and reduces thenoise interference to a low level.

120 VACOR

240 VAC '\.;60 HZ

120 VACOR

240 VAC60 Hz

Fig. 10 - RFI-suppression networks: at 120 VAC, C = 0.1 IlF,200 V; at 240 VAC, C = O.1 IlF,400 V.

Triacs can be used very effectively to apply power tomotors and perform such functions as speed control. revers-ing, full power switching, or any other desired operatingcondition that can be obtained by a switching action. Be-cause most motors are I joe-operated, the triac can beused as a direct replacement for electro-mechanical switches.In proper control circuits, triacs can change the operatingcharacteristics of motors to obtain many different speedand torq ue curves.

A very simple triac static switch for control of ac motorsis shown in Fig. II. The low-current switch controllingthe gate trigger current can be any type of transducer,such as a pressure switch, a thermal switch, a photocell,or a magnetic reed relay. This simple type of circuit allowsthe motor to be switched directly from the transducerswitch without any intermediate power switch or relay.

For dc control, the circuit of Fig. 12 can be used. Byuse of the dc triggering modes, the triac can be directlytriggered from transistor circuits by either a pulse or con-tinuous signal.

'20VAC, 60Hz

lHl.V,WT2700B

240VAC, 60Hz

2k!1. Y2W

T2700D

Fig. 12 - AC Triac Switch Control From DC Input:at 120 VAC, Y = T2700B; at 240 VAC, Y =T2700D.

Fig. 13 shows a single-time-constant circuit which canbe used as a satisfactory proportional speed control forsome applications and with certain types of inductionmotors, such as shaded pole or permanent split-capacitormotors, when the load is fixed. This type of circuit is bestsuited to applications which require speed control in themedium to full-power range. It is specifically useful in ap-plications such as fans or blower-motor controls, wherea small change in motor speed produces a large change in

J 20VAC, 60Hz

O.22pF,200V

T2700B

240VAC, 60Hz

O.22pF,400V

T2700D

air velocity. Caution must be exercised if this type of cir-cuit is used with induction motors because the motor maystall suddenly if the speed of the motor is reduced belowthe drop-out speed for the specitic operating conditiondetermined by the conduction angle of the triac. Becausethe single-time-constant circuit cannot provide speed con-trol of an induction motor load from maximum power tofull off, but only down to some fraction of the full-powerspeed, the effects of hysteresis described previously arenot present. Speed ratios as high as 3: 1 can be obtainedfrom the single-time-constant circuit used with certaintypes of induction motors.

Because motors are basically inductive loads and be-cause the triac turns off when the current reduces to zero,the phase difference between the applied voltage and thedevice current causes the triac to tUTn off when the sourcevoltage is at a value other than zero. When the triac turnsoff, the instantaneous value of input voltage is applieddirectly to the main terminals of the triac. This commutat-ing voltage may have a rate of rise which can retrigger thetriac. The commutating dv/dt can be limited to the capa-bility of the triac by use of an RC network across thedevice, as shown in Fig. 13. The current and voltagewaveshapes for the circuit are shown in Fig. 14 to illus-trate the principle of commutating dv/dt.

II1III COMMUT ATINGI dv/dt

II

Fig. 14 - Waveshapes of commutating dv/dtcharacteristics.

In many industrial applications, it is necessary to reversethe direction of a motor, either manually or by means ofan auxiliary circuit. Fig. 15 shows a circuit which usestwo triacs to provide this type of reversing motor control.The reversing switch can be either a manual switch or an

electronic switch used with some type of sensor to re-verse the direction of the motor. A resistance is added inseries with the capacitor to limit capacitor discharge cur-rent to a safe value whenever both triacs are conductingsimultaneously. Simultaneous conduction can easily occurbecause the triggered triac remains in conduction afterthe gate is disconnected until the current reduces to zero.In the meantime, the nonconducting-triac gate circuit canbe energized so that both triacs are ON and large loopcurrents are set up in the triacs by the discharge of thecapacitor.

120VfJC.,OR

240VN::.'\...., 60 Hz

- - -, REVERSINGI MOTOR

IIII

.-J

J 20VAC, 60Hz

T2800BT2800B

240VAC, 60Hz

T2800DT2800D

The triac motor-reversing circuit can be extended toelectronic garage-door systems which use the principle ofmotor reversing for garage-door direction control. Thesystem contains a transmitter, a receiver, and an operatorto provide remote control for door opening and closing.The block diagram in Fig. 16 shows the functions requiredfor a complete solid-state system. When the garage dooris closed, the gate drive to the DOWN triac is disabled bythe lower-limit closure and the gate drive to the UP triacis inactive because of the state of the flip-flop. If thetransmitter is momentarily keyed, the receiver activatesthe time-delay monostable multivibrator so that it thenchanges the flip-flop state and provides continuous gatedrive to the UP triac. The door then continues to travelin the UP direction until the upper-limit switch closuredisables gate drive to the UP triac. A second keying of thetransmitter provides the DOWN triac with gate drive andcauses the door to travel in the DOWN direction until thegate drive is disabled by the lower limit closure. The timein which the monostable multivibrator is active shouldoverride normal transmitter keying for the purpose of elim-inating erroneous tiring. A feature of this system is that,during travel, transmitter keying provides motor reversingindependent of the upper- or lower-limit closures. Addi-tional features, such as obstacle obstructions, manual con-trol, or time delay for overhead garage lights can beachieved very economically.

r20VACOR

240VAC60 Hz

Fig. 16 - Block diagram for remote-control solid-stategarage-door systems.

In applications in which the hysteresis effect can hetolerated or which require speed control primarily in themedium to full-power range. a single-time-constant circuitsuch as that shown in Fig. 13 for induction motors canalso be used for universal motors. However. it is usuallydesirable to extend the range of speed control from full-power ON to very low conduction angles. The double-timc-constant circuit shown in Fig. 17 provides the delay neces-sary to trigger the triac at very low conduction angles witha minimum of hysteresis. and also provides practically fullpower to the load at the minimum-resistance position ofthe control potentiometer. When this type of control cir-cuit is used, an infinite range of motor speeds can be ob-tained from very low to full-power speeds.

120VAC 60Hz 240VAC, 60Hz

l00kfl, y,w 200kn,lw

c, O.lpF,200V O.lpF,400V

C, O.22pF,200V O.22pF,400Vy T2700B T2700D

There are three general categories of solid-state controlcircuits for electric heating elements: on-off control,phase control, and porportional control using integral-cycle synchronous switching, Phase-control circuits, suchas those used for light dimming are very effective andefficient for electric heat control except for the problemof RFI. In higher-power applications, the RFI is of suchmagnitude that suppression circuits to minimize the inter-ference become quite bulky and expensive,

An on-off circuit for the control of resistance-heatingelements is shown in Fig. 18. The circuit also providessynchronous switching close to the beginning of the zero-voltage crossing of the input voltage to minimize RFI. Thethermistor controls the operation of the two-transistor re-generative switch, which, in turn, controls the operationof the triac. When the temperature being controlled is low,the resistance of the thermistor is high and the regenerativeswitch is OFF. The triac is then triggered directly from theline on positive half-cycles of the input voltage. When thetriac triggers and applies voltage to the load, the capacitoris charged to the peak value of the input voltage, Thecapacitor discharges through the triac gate to trigger thetriac on the opposite half-cycle, The diode-resistor-capacitor"slaving" network triggers the triac on negative half-cyclesof the ac input voltage after it is triggered on the positivehalf-cycle to provide integral cycles of ac power to theload.

When the temperature being controlled reaches thedesired value as determined by the thermistor, the transis-tor regenerative switch conducts at the beginning of thepositive input-voltage cycle to shunt the trigger currentaway from the triac gate. The triac does not conduct aslong as the resistance of the thermistor is low enough tomake the transistor regenerative switch turn on before thetriac can be triggered.

120 VACOR

240VAC60 Hz

THERMISTOR30000 ATOPERATING

TEMP

120VAC.60Hz

2.2kn,SwO,SpF,200V

T4700B

240VAC 60Hz

3.9kn,SwO.SpF,400V

T4700D

Proportional Integral-Cycle Control

On-off controls have only two levels of power input tothe load. The heating coils are either energized to fullpower or are at zero power. Because of thermal time con-stants, on-off controls produce a cyclic action which alter-nates between thermal overshoots and undershoots withpuv:' !"~solution.

This disadvantage is overcome and RFI is minimized byuse of the concept of integral-cycle proportional controlwith synchronous switching. In this system. a time base isselected and the on-time of the triac is varied within thetime base. The ratio of the on-to-off time of the triacwithin this time interval depends upon the power required10 the heating elements to maintain the desired temperature.Fig. 19 shows the on-off ratio of the triac. Within thetime period. the on-time varies hy an integral number ofcycles from full ON to a single cycle of input voltage.

TRIACOFF

r---- TRIAC ON ~ I 14-~~-i-:;-' ;-/uI---- TIME BASE ~

HIGH HEAT

~~~~~ .~~ TIME BASE -- ----l

One method of achieving integral cycle proportional con-trol is 10 use a fixed-frequency sawtooth generator signalwhich is summed with a de control signal. The sawtoothgenerator establishes the period or time base of the system.The de control signal is obtained from the output of thetemperature-sensing network. The principle is illustrated in

• IOflF115K

Fig. 20. As the sawlOoth voltage increases, a level isreached which turns on power to the heating elements. Asthe temperature at the sensor changes, the de level shiftsaccordingly and changes the length of time that the poweris applied to the heating elements within the establishedtime.

When the demand for heat is high, the de control sig-nal is high and little power is supplied continuously to theheating elements. When the demand for heat is completelysatisfied, the de control signal is low and nO power issupplied to the heating elements. Usually a system usingthis principle operates continuously somewhere betweenfull ON and full OFF to satisfy the demand for heat.

A proportional integral-cycle heat control system isshown in Fig. 21. The ramp voltage is generated bycharging of capacilOr C through resislOr R for approximately2 seconds for the values shown. The length of the rampis determined by the voltage magnitude required to trig-ger the regenerative switch consisting of Q, and Q2' Thetemperature sensor consisting of Q:: and Q., together withthe controlling thermistor Th. establishes a voltage levelat the base of Q:: which depends upon the resistance valueof the thermistor. Q:: and Q. form a bistable multivibralOr.The state of the multivibrator depends upon the basebias of Q::. When Q:: is conducting, Q. is cut off. Thepulse generator is energized and generates pulses 10 triggerthe triac. The output of the pulse g~nerator is synchro-nized to the line voltage or. the negative half-cycle by02 and R:: and on the positive half-cycle by D, and R::.The pulses are. therefore. generated at the zero-voltagecrossings and trigger the triaes into conduction at onlythese points.

120 VAC

1200~AC 24~~ AC

24QVAC

60kll, Y,W

3.3kll,2W

33kll,y,w

2N5441 or 2N5444

120kll. y,w

5.6kll,2W

57kll, Y,W

2N5442 or 2N5445

NOTE: ALL RESISTORS '12 W,! 10 '"4UNLESS OTHERWISE SPECIE

THERMISTOR APPROX. 3000 nAT OPERATING TEMP.

Light Dimmers Using Triacs

Introduction

A simple, inexpensive light-dimmer circuit containsa diac, triac and RC charge-control network. The diacis a two-terminal ac switch which is changed from thenon-conducting state to the conducting state by an ap-propriate voltage of either polarity. The triac is athree-terminal ac switch which is changed from the non-conducting state to the conducting state when a posi-tive or negative voltage is applied to the gate terminal.This Note describes the use of the diac to trigger thetriac in light-dimming circuits. The basic light-controlcircuit is introduced and its operation described. Inaddition, the various components added to improve cir-cuit performance are discussed. Three complete cir-cuits are shown, with tables showing the componentvalues to be used for 120-volt, 60-Hz operation and240-volt, 50/60 Hz operation. Mechanical details in-volved in building the circuits are also discussed and atrouble-shooting chart is included.

Ci rcuit Description

The triac or bidirectional triode thyristor is a three-terminal solid-state switch. The two power electrodesor main terminals are referred to as T 1 and T 2' and thecontrol. electrode is referred to as the gate. Fig. 1shows the voltage-current characteristic observed be-tween the power electrodes. For either polarity of ap-plied voltage, the device is bistable: the triac exhibitseither a high impedance (off state) or a low impedance(on state). The device normally assumes the off statewhen bias is applied, but can be triggered into the onstate by a pulse of current, of either polarity, applied

MAIN TERMINAL 2NEGATIVE

ON5TATE/

between gate and T l' The device then remains in theon state until current is reduced close to zero by theexternal circuitry.

The diac or symmetrical trigger diode is a two-ter-minal bidirectional switch with a voltage-eurrent char-acteristic as shown in Fig. 2. The device exhibits ahigh-impedance, low-leakage-current characteristic un-til the applied voltage reaches the breakover voltageVSO' of the order of 35 volts. Above this voltage thedevice exhibits a negative resistance, so that voltagedecreases as current increases. In light-dimmer cir-cuits a diac is used in conjunction with a capacitor to

generate current pulses which trigger the triac into con-duction. The voltage on the diac and capacitor in-creases until it reaches VBa, at which point the diacvoltage breaks back and a pulse of current flows as thecapacitor discharges.

Fig. 3 shows the basic triac-diac light control cir-cuit with the triac connected in a series with the load.During the beginning of each half cycle the triac is inthe off-state. As a result, the entire line voltage ap-pears across the triac, and none appears across theload. Because the triac is in parallel with the poten-tiometer and capacitor, the voltage across the triacdrives current through the potentiometer and charges thecapacitor. When the capacitor voltage reaches thebreakover voltage VBa of the diac, the capacitor dis-charges through the triac gate, turning on the triac. Atthis point, the line voltage is transferred from the triacto the load for the remainder of that half cycle. Thissequence of events is repeated for every half cycle ofeither polarity. If the potentiometer resistance is re-duced, the capacitor charges more rapidly and VBa isreached earlier in the cycle, increasing the power ap-plied to the load and hence the intensity of light. If thepotentiometer resistance is increased, triggering occurslater, load power is reduced, and the light intensity isdecreased.

Although the basic light-control circuit operateswith the component arrangement shown in Fig. 3, addi-tional components and sections are usually added to re-duce hysteresis effects, extend the effective range ofthe light-control potentiometer, and suppress radio-fre-quency interference.

Hysteresis

As applied to light controls, the term hysteresis re-fers to a difference in the control potentiometer settingat \'!h ich the light initially turns-on and the setting atwhich it is extinguished. With high hysteresis, the con-trol may have to be turned across 35 per cent of itsrange before the light turns on at all, after which the

control must be turned back to a much lower setting be-fore the light goes completely out.

Besides poor control, hysteresis is undesirable be-cause at low illumination levels, the light may be ex-tinguished by a momentary drop in line voltage. At lowillumination levels, the potentiometer is normally turnedback beyond the selling at which it initially turned on.When triggering is missed on one half cycle as a resultof a momentary drop in line voltage such as that causedby starting a heavy appliance, oil burner, etc., the lightmay go out and stay out until the control is again turnedup to the starting point.

Hysteresis is caused by an abrupt decrease in ca-pacitor voltage when triggering begins. Fig. 4 showsthe charging cycle of the capacitor-diac circuit. Thelarge ac sine wave represents the line voltage; thesmaller ac sine wave represents the normal chargingcycle of the capacitor. Gate triggering occurs at thefirst point of intersection of the two waves. At thispoint, however, there is an abrupt decrease in the ca-pacitor voltage (dashed line). As a result, the capaci-tor begins to charge during the next half cycle at a low-er voltage and reaches the trigger voltage in the oppo-site direction earlier in the cycle (2nd (Actual) GateTrigger Point). Hysteresis is reduced by maintainingsome voltage on the capacitor during gate triggering.

Fig.4 - Charging cycle of the capacitor-diac networkin the circuit of Fig.3.

Some improvement is realized when a resistor isconnected in series with the diac, as shown in Fig. 5.Although this positive resistance reduces the net a-mount of negative resistance so the capacitor voltagedoes not drop as much, it also decreases the magnitude

t20VACOR

240VAC60 Hz

Fig.S - Light-control circuit incorporating a resistor inseries with the diac.

of the gate current pulse,and therefore, a larger-valueca-pacitor may be required. More significant improvementis obtained when a second capacitor 'is added as shownin Fig. 6, forming a "double-time-constant" circuit.

The added capacitor C2 reduces hysteresis by chargingto a higher voltage than C l' and maintaining some volt-age on C 1 after triggering. The effect is illustrated inFig. 7. As gate triggering occurs C1 discharges to formthe gate current pulse. However, because of the longerC2 R time constant, C2 restores some of the charge re-moved from C 1 by the gate current pulse.

" 2n'(THEORETICAL)GATE TRIGGER

POINT

Fig.7 • Charging cycle of the diac network in the circuitof Fig.6.

Fig. 8 shows another double-time constant circuitin which a fixed resistor is added and the potentiometeris moved over to connect directly to the diac. Althoughthe maximum attainable conduction angle is increased,the difference in power is less than one per cent.

Range Control

Maximum range of light control is obtained when thelamp begins to light as soon as the potentiometer isturned slightly from the zero-intensity end of the range.

Fig.8 - Double-time-constant circuit in which the poten-tiometer is connected directly to the diac.

After the control circuit is assembled, the point of ini-tial turn-on may be located at 40 per cent across thecontrol range, leaving only 60 per cent effective to con-trol the light intensity. This difference occurs becausethe point of initial turn-on is determined by the inter-action of three components (potentiometer, capacitor,and diac) each of which may have values with a toler-ance of plus or minus 20 per cent. A trimmer resistorconnected across the potentiometer, as shown in Fig. 9,can be used to compensate for component variations andmove the initial turn-on point back to the end of thecontrol range. The trimmer can be a variable resistorwhich is set to the required value after the circuit isassembled, or a fixed resistor of the required value asdetermined by individually testing the assemblies witha resistor substitution box in place of the trimmer.

The double-lime-constant circuit with trimmer re-sistor provides consistently good hysteresis correctionas well as good range control. The use of a high-re-sistance potentiometer, possibly about twice the re-sistance of the trimmer, spreads out the low-intensityrange for finer control.

Fig.9 - Light-control circuits incorporating a trimmerresistor across the potentiometer.

::'LdLt LV LlIt J.UW-.lIl1l-'tUdllL.t ::'LdLt Wll1lUI .L VI ,,{. 1Il1L.IV-

seconds, the current must rise from essentially zero towhatever the load will permit within this period. Thisrapid rise in current produces radio frequency interfer-ence (RFI) extending up into the range of several mega-hertz. Although the resulting noise does not affect thetelevision and FM radio frequencies, it does affect theshort-wave and AM-radio bands. The level of RFI pro-duced by the triac is well below that produced by mostAC-DC brush-type electric motors, but because the lightdimmer may be on for long periods of time, some type ofRFI suppression network is usually added. A reason-ably effective suppression network is obtained, as

120 VAC

2.3~ACJ'60 Hz

LIGHTCONTROLCIRCUIT

shown in Fig. 10, by connection of an inductor in serieswith the light-control circuit to limit the rate of currentrise. The capacitor is connected across the entire net-work to bypass high-frequency signals so that they arenot connected to any external circuits through the pow-er lines.

Overload Considerations

An important consideration in the choice of a triacis the transient load which results from the initiallylower resistance of the cold filament when the lamp isfirst turned on. The transient load results in a surge orinrush current which can destroy the triac. Theworst case occurs when the light is sw itched on at thepeak of the line voltage. The ratio of initial peak cur-rent to steady-state current is usually about 10 to 1 andcan be as high as 15 to 1 for high-wattage lamps. Thetriac chosen for a particular lamp, therefore, shouldhave a subcycle surge capability sufficient to allow re-peated passage of this peak current without degradationof the device.

Flashover is another transient condition associatedwith incandescent loads, and may impose an even great-er stress than inrush. Flashover refers to the arc de-veloped between the broken ends of the filament whenthe light bulb burns out. Ionization within the bulb al-lows the arc to flow directly between the internal lead-in wires, and current is then limited only by line imped-ance. Because of the large currents associated withflashover, incandescent light bulbs have fuses builtinto the stem to open circuit at the bulb without openingthe line circuit breaker. On low-wattage bulbs, the arc

nues until the bulb fuse opens, and may last for some-what more than one half cycle. Damage or degradationof the triac can be avoided by selection of a triac thathas surge capability in excess of the flashover currentswhich can occur. A device capable of handling a one-cycle peak current of 100 amperes or more is adequatefor most installations using up to ISO-watt bulbs. Whenthe triac has inadequate surge capability for a particularapplication, special high-speed fuses or circuit break-ers, external resistors, or other current limiting devicessuch as chokes may be used.

Light-Dimmer Circuits

Fig. 11 shows a single-time-constant circuit; Fig.12 shows a double-time-constant circuit. Both are com-plete circuits suitable for operation at 120 or 240 voltsac, 50 or 60 Hz. The chart with each circuit specifiesthe values of components which change with the linevoltage. The resistor in series with the potentiometerin each circuit is used to protect the potentiometer bylimiting the current when the potentiometer is at thelow-resistance end of its range.

It is important to remember that a triac in these cir-cuits dissipates power at the rate of about one watt peram{lere. Therefore, some means of removing heat mustbe provided to keep the device within its safe operat-ing-temperature range. On a small light-eontrol circuitsuch as one built into a lamp socket, the lead-in wireserves as an effective heat sink. Attachment of thetriac case directly to one of the lead-in wires providessufficient heat dissipation for operating currents up to2 amperes (rms). On wall-mounted controls operatingup to 6 amperes, the combination of face plate and wall-box serves as an effective heat sink. For higher-powercontrols, however, the ordinary face plate and wallboxdo not provide sufficient heat-sinking area. In thiscase, additional area may be obtained by use of a fin-ned face plate that has a cover plate which stands outfrom the wall so air can circulate freely over the fins.

On wall-mounted controls, it is also important thatthe triac be electrically isolated from the face .plate,but at the same time be in good thermal contact with it.Although the thermal conductivity of most electrical in-sulators is relatively low when compared with metals, alow-thermal-resistance, electrically isolated bond oftriac to face plate can be obtained if the thickness of

120 VAC

'"\, 2480AC60 Hz

R2 3300 ohms, y, W

Cl 0.05 f.LF, 100V

C2 0.05 f.LF, 100V

L 100 f.LH

Yl D3202U

Y2 T2800B

0.1 f.LF, 100V

0.10 f.LF, 100V (60 Hz)0.12 f.LF, 100V (50 Hz)

200 f.LH

D3202U

120 VAC R,

'"\- OR240 V AC

60 Hz

C, C2

~

Rl 0.1 megohm, y,wR2 2200 ohms, Y,W 0.2 megohm, lW (60 Hz)

0.25 megohm, lW (50 Hz)

C1C2 0.1 f.LF,200V

L 100 f.LH

Yl D3202U

Y2 T2800B

0.1 f.LF,400V

200 f.LH

D3202U

T2800D

the insulator is minimized, and the area for heat trans-fer through the insulator is maximized. Suitable insula-ting materials are fiber-glass tape, ceramic sheet, mica,and polyimide film. Fig. 13 shows two examples of iso-lated mounting for triacs: in Fig. 13(a) , a TO-5 pack-

ELECTRICAL TAPETHERMOSETTING ONE SIDE

(SCOTCH· BRAND ELECTRICALTAPE No 27)

age; in Fig. 13(b), the new plastic package. Electricalinsulating tape is first placed over the inside of theface plate. The triac is then mounted to the insulatedface plate by use of epoxy-resin cement.

ELECTRICAL TAPETHERMOSETTING ONE SIDE

(SCOTCH- BRAND ELECTRICALTAPE No. 27)

Trouble Shooting

Some malfunctions which can occur in light-dimming circuits are listed with their possiblecauses, as follows:

Light remains on full Triac Shorted in both directions caused by flashoverintensity and will not or high current surge.dim. Wiring Anode-cathode or anode-gate shorted.

Light intensity can be Triac Breakover voltage reduced in one or bothvaried but fails to reach directions.zero. Diac Low breakover voltage.

Triggering Capacitance too low.Capacitor

Potentiometer Maximum resistance too low.

Discontinuity in bright- Triac IGT too high in one mode.ness at about halfintensity. Diac Breakover not symmetrical.

Flickerir,g exists at Triac Low commutating dv/ dt capability. Flickeringlow intensity. stops when the inductor is shorted.

Light out over most of Triac IGT too high.the control range; turns

Diac Voltage breakback too low.on full intensity near lowresistance end of potent i- Wiring Diac not included or shorted out.ometer.

Same effect as preceding, Triac Internal short gate to cathode (very unlikely becausebut accompanied by arc- such devices are rejected by 100 per cent electricaling in potentiometer. test).

Capacitor Shorted (this condition destroys the potentiometer,but not the triac).

Wiring Open anode contact (this condition destroys both thepotentiometer and the triac). Cathode to gate short(this condition destroys only the potentiometer).

Light fails to turn on Triac Open gate contact (very unlikely due to the 100 perat all. cent electrical test by manufacturer).

Diac Open

Potentiometer Open

Wiring Open circuit at potentiometer, diac, triac gate, orcathode.

[lli(]5LJDSolid StateDivision


AN-3780

A New Horizontal-Deflection System UsingRCA S3705M and S3706M Silicon Controlled Rectifiers

This Note describes a highly reliable horizontal-de-flection system designed for use in the RCA CTC-40solid-state color television receiver. This system illus-trates a new approach in horizontal-circuit design thatrepresents a complete departure from the approachescurrently used in commercial television receivers. Theswitching action required to generate the scan currentin the horizontal yoke windings and the high-voltagepulse used to derive the dc operating voltages for thepicture tube is controlled by two silicon controlled rec-tifiers (SCR's) that are used in conjunction with asso-ciated fast-recovery diodes to form bipolar switches.

The RCA-S370SM SCR used to control the trace cur-rent and the RCA-S3706M SCR that provides the com-mutating action to initiate trace-retrace switchingexhibit the high voltage- and current-handling capa-bilities, together with the the excellent switching char-acteristics, required for reliable operation in deflection-system applications. The switching diodes, RCA-D2601EF(trace) and D260 IDF (commutating), provide fast re-covery times, high reverse-voltage blocking capabilities,and low turn-on voltage drops. These features and thefact that, with the exception of one non-critical trigger-ing pulse, all control voltages, timing, and control po-larities are supplied by passive elements within thesystem (rather than by external drive sources) con-tribute substantially to the excellent reliability of theSCR deflection system.

Fig. 1 shows the circuit configuration of the over-allhorizontal-deflection system. The system operates di-

rectly from a conventional, unregulated dc power sup-ply of + 155 volts, provides full-screen deflection atangles up to 90 degrees at full beam current (1.5 milli-amperes average in the CTC-40 receiver). The currentand voltage waveforms required for horizontal deflec-tion and for generation of the high voltage are derivedessentially from LC resonant circuit>. As a result, fastand abrupt switching transients, which would imposestrains on the solid-state devices, are avoided.

A regulator stage is included in the SCR horizontal-deflection circuit to maintain the scan and the highvoltage within acceptable limits with variations in theac line voltage or picture-tube beam current. Thesystem also contains circuits that provide full protectionagainst the effects of arcs in the picture tube or the high-voltage rectifier and linearity and pincushion correctioncircuits. Each individual part of the deflection system isdesigned to specifications that are compatible withachievement of the following system performance:

25-inch, 90-degree color type; neck diameter =1YJ. 6 inches (i.e_, similar to RCA- Type25XP22)

U1tor Voltage, Beam Current, and Regulation

26.5 kilovolts at zero beam current or 24.5kilovolts at 1.5 milliamperes (average) of beamcurrent for ac line voltages of i20 to 130 voltsrms

HIGH-VOLTAGEREGULATOR

TYPE 2N4064

SATURABLEREACTOR

LSRF.=-----------d

SCRTReA

S3705M

IOOOpF

J;-

24.5 kilovolts at 1 milliampere of beam currentfor ac line voltages of 108 to 130 volts rms

22.5 kilovolts at 1.5 milliamperes of beam cur-rent for an ac line voltage of 105 volts rms

Input Current

420 milliamperes at zero beam current

670 milJiamperes at 1.5 milliamperes of beamcurrent

DC Input Voltage (Nominal)

155 volts at zero beam current

148 volts at 1.5 milliamperes of beam current

Scan Regulation*

%-inch change for variation in ac line voltagefrom 105 to 130 volts rms

% ~inch change for beam-current variation of0.3 to 1.5 milliamperes at a line voltage of 120volts rms

Linearity*

Deviation in picture width is equal to or lessthan 5 per cent, left to right

Retrace Time

Flyback pulse width = 12.5 microseconds atzero crossing of yoke voltage

Total flyback pulse width = 14 microsecondsat extremes of yoke voltage

Trigger Input10-volt, 5-microsecond pulse (obtained directlyfrom horizontal oscillator)

Pincushion Correction

Top and bottom pincushion correction providedfor a minimum radius of 150 inches

REQUIREMENTS OF THE SWITCHING SCR's ANDDIODES

The SCR horizontal-deflection circuit requires fastreverse recovery for both the switching SCR's and thediodes and fast turn-on for the SCR's. The S3705M andS3706M SCR's and the 0260 IEF and D260 IDF diodes arewell suited to provide this type of performance. (De-tailed specifications for the SCR's and diodes are givenin the published data on the devices). The exceptionalcapabilities of these devices are illustrated by the per-formance that they provide in the horizontal-deflectionsystem. Fig. 2 shows the significant current and voltagewaveforms that the SCR's and diodes are subjected toduring operation of the deflection circuit.

The S3706M SCR used in the commutating switch isrequired to pass a pulse of current that has a peakamplitude of 13 amperes and an initial rate of rise of20 amperes per microsecond. At the operating fre-quency of the horizontal-deflection circuit, achievementof this performance requires low turn-on dissipation in

An SCR is turned off by a reversal of its anode-to-cathode voltage; before the forward voltage can be re-applied, a short time is required to allow the device to

IIIII

COMMUTATING-$WITCH __ 'seR CURRENT

->I i'-4.5,.,toff

COMMUTATING- SWITCH VOLTAGE(DIODE AND seRl

I COMMUTATING- SWITC~ OIOOE CURRENTI II I

obc-=-~~-----~~----I II CQMMUTATING-$W1TCH seR GATE SIGNAL

U\ i: 17S vI,., TRACE -SWITCH VOLTAG~

SLOPE (DIODE AND SeR)

II1

0--IIII

0-1- --I

II1

Fig. 2 - Voltage and current wavelorms applied to the SCR'sand diodes used to control the switching actions in the

SCR horizontal-deflection system.

regain its forward-blocking capability. Under worst-case conditions, the available turn-off time for thecommutating switch requires the use of an SCR thatcan be completely turned off in 4.5 microseconds. TheSCR must then be able to block a reapplied forwardvoltage of 100 volts applied at a rate of 400 volts permicrosecond. The turn-off requirement for the trace-switch SCR, under worst-case circuit conditions, is 2.5

'UILS pt:r mlcrosecona. NegatIve gate bias is used withboth SCR's to reduce turn-off time. The gate sensi-tivity of the commutating-switch SCR is high enough sothat this device can be triggered directly from thehorizontal oscillator.

The exceptional switching performance provided bythe S370SM and S3706M seR's is made possible by use ofall-diffused pellet structures that employ a centrallylocated gate having a large gate-cathode periphery toensure low initial forward voltage drops and, therefore,low switching losses. The lifetime of minority charge car-riers is substantially reduced to provide the fast turn-off-time capability. The "shorted-emitter" constructiontechnique, in which a low-resistance path is providedaround the gate-to-cathode junction, is used to obtainthe high dv /dt capability required for the SCR's towithstand the high rates of reapplied forward voltageencountered in the horizontal-deflection system.

The D260 I EF and D260 I DF diodes used in the trace andcommutating switches, respectively, are designed toprovide fast reverse recovery (by means of minority-carrier lifetime control), to reduce rf interference in thecircuit, and to decrease diode recovery losses. The slopeand magnitude of the reverse-recovery current in thediodes have been optimized to ensure minimum reverse-recovery dissipation and to prevent rf interference be-cause of overly abrupt recovery. The fast recovery char-acteristics have been achieved while maintaining a lowturn-on voltage drop and a high reverse-voltage block-ing capability.

The essential components in the SCR horizontal-deflection system required to develop the scan currentin the yoke windings are shown in Fig. 3. Essentially

HIGH-VOLTAGETRANSFORMER

r----,II

[:II[ :E:[:

__ J

Fig. 3 - Basic circuit lor generation of the deflection ..currentwaveform ill the horiz.ontal yoke winding.

the trace-switch diode DT and the trace-switch con-trolled rectifier SCRT provide the switching actionwhich controls the current in the horizontal yoke wind-ings Ly during the picture-tube beam-trace interval.The commutating-switch diode Dc and the commutat-ing-switch controlled rectifier SCRc initiate retrace andcontrol the yoke current during the retrace interval.Inductor Ln and capacitors, Cn, CA, and Cy provide thenecessary energy storage and timing cycles. InductorLec supplies a charge path for capacitor Cn from the dcsupply voltage (B +) so that the system can be re-charged from the receiver power supply. The secondaryof inductor Lee, provides the gate trigger voltage forthe trace-switch SCR. Capacitor Cn establishes theoptimum retrace time by virtue of its resonant actionwith inductor Ln.

The complete horizontal-deflection cycle may best bedescribed as a sequence of discrete intervals, each ter-minated by a change in the conduction state of aswitching device. In the following discussion, the actionof the auxiliary capacitor CA and the flyback high-voltage transformer are initially neglected to simplifythe explanation.

Fig. 4 shows the circuit elements involved and thevoltage and current relationships during the first half of

o--~------

Fig. 4 - Effective configuration of the deflection circuit duringthe first half of the trace interval, time To to T2. and

operating voltage and current waveforms for thecomplete frace-retrace cycle.

the trace deflection-current interval, the period fromTo to T 2' At time To, the magnetic field has been estab-lished about the horizontal yoke windings Ly by thecircuit action during the retrace period of the precedingcycle (explained in the subsequent discussion of retraceintervals). This magnetic field generates a decayingyoke current iy that decreases to zero when the energyin the yoke winding is depleted (at time T2). Thiscurrent charges capacitor C,. to a positive voltage Vcy

through the trace-switch diode DT•

During the first half of the trace interval (just priorto time T 2) the trace controlled rectifier SCRT ismade ready to conduct by application of an appropriategate voltage pulse VOATE' SCRT does not conduct, how-ever, until a forward bias is also applied between itsanode and cathode. This voltage is applied during thesecond half of the trace interval.

At time T2, current is no longer maintained bythe yoke inductance, and capacitor C,. begins todischarge into this inductance. The direction of thecurrent in the circuit is then reversed, and the trace-switch diode DT becomes reverse-biased. The trace-switch controlled rectifier SCRT, however, is then for-ward-biased by the voltage VC

yacross the capacitor,

and the capacitor discharges into the yoke inductancethrough SCRT, as indicated in Fig. 5. The capacitor Cy

1

Fig. 5 - Effective configuration of the deflection circuit duringthe second half of the trace interval. time T2 to T5.

and the complete scan-current waveform.

is sufficiently large so that the voltage VCy remainsessentially constant during the entire trace and retrace

cycle. This constant voltage results in a linear rise incurrent through the yoke inductance Ly over the entirescan interval from Toto T 5'

The circuit action to initiate retrace starts before thetrace interval is completed. Fig. 6 shows the circuitelements and the voltage and current waveforms re-quired for this action. At time T 3, prior to the end of

I

~0- - - - -I ~ --

IVGATE I

o~---

Fig. 6;- Effective configuration of the deflection circuit andsignificant vol/age and current waveforms for initiation

of retrace, time T3 to Tj.

the trace period, the commutating-switch controlledrectifier SCRc is turned on by application of a pulsefrom the horizontal oscillator to its gate. Capacitor CR

is then allowed to discharge through SCR:, and in-ductor LR. The current in this loop, referred to as thecommutating circuit, builds up in the form of a half-sine-wave pulse. At time T4, when the magnitude ofthis current pulse exceeds the yoke current, the trace-switch diode DT again becomes forward-biased. The ex-

cess current in the commutating pulse is tben bypassedaround the yoke winding by the shunting action ofdiode DT. During the time from T 4 to T 5, the trace-switch controlled rectifier SCRT is reverse-biased by theamount of the voltage drop across diode DT• The trace-switch controlled rectifier, therefore, is turned off dur-ing this interval and is allowed to recover its ability toblock the forward voltage that is subsequently applied.

At time T5, the commutating pulse is no longergreater than the yoke current, as shown in Fig. 7;trace-switch diode DT then ceases to conduct. The yokeinductance maintains the yoke current but, with SCRT

in the OFF state, this current now flows in the commu-tating loop formed by LR, CR, and SCR:,. Time T 5 isthe beginning of retrace.

As the current in the yoke windings decreases tozero, the energy supplied by this current charges ca-pacitor CR with an opposite-polarity voltage in aresonant oscillation. At time T6, the yoke current iszero, and capacitor CR is charged to its maximum nega-tive voltage value. This action completes the first halfof retrace.

~

IY I

0- - ~-

Fig. 7 - Effective configuration of the deflection circuit andoperating voltage and current waveforms during the

first half of retrace, time T 5 to T 6.

At time T G, the energy in the yoke inductance isdepleted, and the stored energy on the retrace capaci-tor Cn is then returned to the yoke inductance. Thisaction reverses the direction of current flow in the yoke.During the reversal of yoke current, the commutating-switch diode Dc provides the return path for the loopcurrent, as indicated in Fig. 8. The com mutating-

Fig. 8 - Effective configuration of the deflection circuit andoperating voltage and curren! waveforms during the

second half of retrace, time Tn to To·

switch controlled rectifier SCRe is reverse-biased by theamount of the voltage drop across diode Dc. Thecommutating-switch controlled rectifier, therefore, turnsoff and recovers its voltage-blocking capability. As theyoke current builds up in the negative direction, thevoltage on the retrace capacitor Cn is decreased. Attime To, the voltage across capacitor Cn no longerprovides a driving voltage for the yoke current to flowin the loop formed by Ln, Cn, and Ly• The yoke cur-rent finds an easier path up through trace-switch diodeDT, as shown in Fig. 9. This action represents thebeginning of the trace period for the yoke current(i.e., the start of a new cycle of operation), time To.

Once the negative yoke current is decoupled fromthe commutating loop by the trace-switch diode, thecurrent in the commutating circuit decays to zero. Thestored energy in the inductor Ln charges capacitor Cnto an initial value of positive voltage. Because the reso-nant frequency of Ln and Cn is high, this transfer is

Fig. 9 - Effective configuration oj/he deflection circuit duringthe slt'itchover from retrace 10 trace, time To.

accomplished in a relatively short period, Toto T 1, asshown in Fig. 8.

The actions required to restore energy to the com-mutating circuit and to reset the trace SCR are alsovery important considerations in the operation of thebasic deflection circuit. Both actions involve the in-ductor Lee.

During the retrace period, inductor Lee is connectedbetween the dc supply voltage (B +) and ground bythe conduction of either the commutating-switch SCRor diode (SCRe or Dc), as indicated in Fig. 10.When the diode and the SCR cease to conduct, how-ever, the path from Lee to ground is opened. Theenergy stored in inductor Lee during the retrace intervalthen charges capacitor Cn through the B + supply, asshown in Fig. 1 I. This charging process continuesthrough the trace period until retrace is again initiated.The resultant charge on capacitor Cn is used to re-supply energy to the yoke circuit during the retraceinterval.

The voltage developed across inductor Lee duringthe charging of capacitor Cn is used to forward-bias thegate electrode of the trace SCR properly so that this

Fig. 10 - Circuit elements and current path used to supplyenergy to the charging choke Lee during period from the

start of retrace switching action to the end of the firsthalf of the retrace interval, time T:~ to T1.

device is made ready to conduct. This voltage is in-ductively coupled from 4Jc and applied to the gate ofSCRr through to a wave-shaping network formed byinductor 4, capacitor CG, and resistor RG• The result-ing voltage signal applied to the gate of SCRT has thedesired shape and amplitude so that SCRT conductswhen a forward bias is applied from anode to cathode,approximately midway through the trace interval.

Fig. 11 - Effective configuration of the deflection circuit forresetting (application of forward bias /0) the trace SCR

and recharging rhe retrace capacitor CR, during timeinterval from T 1 10 T;~.

In the preceding discussions of the operation of thedeflection circuit, the effect of capacitor CA was ne-glected. Inclusion of this capacitor affects some of thecircuit waveforms, as shown in Fig. 12, aids in theturn-off of the trace SCR, reduces the retrace time,and provides additional energy-storage capability forthe circuit.

During most of the trace interval ( from To to T.),including the interval (T 3 to T 4) during which thecommutating pulse occurs, the trace switch is closed,and capacitor CA is in parallel with the retrace ca-pacitor CR. From the start of retrace at time T 4 to thebeginning of the next trace interval at time To, the traceswitch is open. For this condition, capacitor CA is inseries with the yoke L, and the retrace capacitor CR sothat the capacitance in the retrace circuit is effectivelydecreased. As a result, the resonant frequency of theretrace is increased, and the retrace time is reduced.

The auxiliary capacitor CA is also in parallel with theretrace inductor LR. The waveshapes in the deflectioncircuit are also affected by the resultant higher-fre-quency resonant discharge around this loop. The volt-age and current waveforms shown in Fig. 12 illustratethe effects of the capacitor CA'

Fig. 12 - Circuit configuration showing the addition ofauxiliary capacitor CA and current and voltage

waveforms showing the eOect of this capacitor.

The SCR horizontal-deflection system in the RCACTC-40 receiver generates the high voltage for thepicture tube in essentially the same manner as has beenused for many years in other commercial television re-ceivers, i.e., by transformation of the horizontal-deflec-tion retrace (f1yback) pulse to a high voltage with avoltage step-up transformer and subsequent rectificationof this stepped-up voltage. The RCA-3CZ3 electrontube is used as the high-voltage rectifier in the RCACTC-40 television receiver.

Fig. 13 shows a schematic of the over-all high-voltage circuit, and Fig. 14 shows a simplified sche-matic of this circuit together with the significant voltageand current waveforms. The high-voltage transformeris connected across the yoke and retrace capacitor. Theinductance and capacitance of this transformer are suchthat it presents a load tuned to about the third har-monic of the retrace resonant frequency. The presenceof this load adds harmonic components to the wave-forms previously described.

FOCUS ANDSCREENSUPPLY

HORIZ.UTILITY

:~LCLAMPlIN.~~ADJ.ICy

The high voltage is regulated by controlling theamount of energy made available to the horizontal-

f\... '(Ly+CyJ

o--~--~-

Fig. 14 - Simplified schematic and significant voltage andcurrent waveforms for the high-voltage circuit.

output trace circuit. As stated previously, the tracecircuit is supplied by energy which is stored primarilyon the com mutating capacitor CR' This capacitor ischarged during the trace interval through inductanceLee.

Control of the high-voltage energy on the commutat-ing capacitor is made possible by the design of in-ductor Lee so that it approaches resonance with ca-pacitor Cn; the degree of this resonance can be variedby the high-voltage regulator circuit.

Fig. 15 illustrates the effect of this resonant actionon the charge on the commutating capacitor. The wave-shape that results from the resonant action determinesthe amount of charge that will be on the capacitor whenits energy is released into the trace circuit.

The resonance of the inductor Ler and the commu-tating capacitor Cn is varied by use of a saturablereactor Lsn to control the inductance across L('r. Thesaturable-reactor load winding is placed in parallel withLee. Changes in the current through the reactor controlwindings varies the total inductance of the input circuit.The current in the reactor load winding is controlledby the pulse regulator circuit.

The control current for the reactor control winding isdetermined by the conduction of the high-voltage regu-lator transistor Q". The collector current of this tran-sistor is in turn controlled by the voltage across theyoke-return capacitor C. This voltage, which is directlyproportional to high voltage and which tracks anychanges in the high voltage, is sampled by the high-voltage adjustment control and compared to a refer-ence voltage determined by a Zener diode. The result-ing difference voltage, which is indicative of changes inthe high voltage, controls the conduction of the regu-lator transistor.

As the high-voltage load (beam current) decreases,the high voltage tends to increase. The voltage acrossthe yoke-return capacitor then tends to increase. Thisaction results in an instantaneously higher current pulsethrough the base-emitter junction of the regulator tran-sistor. The reactor control current, therefore, tends toincrease proportionally, so that the total inductance ofthe input circuit is decreased. The resulting change inresonance of Lee, L,n, and Cn reduces the charge onCR and the energy made available to the trace circuit.In this way, the high voltage is stabilized. The reverseaction, of course, occurs if the high voltage tends todecrease.

Diode DIm acts as an energy-recovery diode whichimproves the efficiency of the control circuit. The regu-lator transistor actually conducts only for a very shorttime, and the majority of the control current is suppliedby diode conduction. This high-voltage regulating sys-tem also maintains the high voltage within acceptablelimits for variations in the ac line voltage over therange from 105 to 130 volts.

r--I

-J:iL'51=1=1L __ -J

Ly HV.IITRANS.

-~AT HIGH L~NE VOLTAGE:;\. .CRAND LOW BEA'·'· Cl*tR~.... -

- - --- - --

AT LOW LINE VOlTAGEAND HIGH BEAM CURRENT

Fig. 15 - High-voltage regulator and operating voltageand current waveforms.

Two circuits are included in the SCR deflectionsystem to protect the trace-switch SCR and diode fromhigh voltages and currents that may result because ofarcing from the high-voltage rectifier or the picturetube. These circuits are shown in Fig. 16.

One circuit includes the parallel combination of adiode (Do) and a 4.7-ohm resistor (Ro) connected inseries with the primary of the high-voltage transformer.

H'V~TRANS. H.V.

II

These components dampen the high ringing current thatmay occur as a result of high-voltage arcing. This cur-rent is mainly dissipated in the resistor Ro; The prin-cipal purpose of the shunting diode is to allow thenormal initial flyback current to flow unimpeded so thatthe high voltage is not decreased by the dampeningaction of the resistor.

The other protection circuit consists of a diode(DcL), a capacitor (CCL) connected between the diodecathode and ground, and a resistor ReL from the diodecathode to the B + supply v.oltage. The anode of thediode is connected to the ungrounded end of the pri-mary of the high-voltage transformer. The diode con-ducts during the peak of the retrace voltage pulse thatappears across the primary of the high-voltage trans-former and charges the capacitor to this voltage. Theresistor provides a high-resistance discharge path forthe capacitor and allows the voltage across the capaci-tor to be reduced just enough to keep the diode re-verse-biased during the retrace interval. When a sharpvoltage pulse is produced because of high-voltage arc-ing, the diode conducts so that the trace switch isclamped to the voltage across the capacitor. The arcpulse voltage, therefore, is not allowed to exceed thebreakdown voltage of the trace-switch components.

Two means are provided in the SCR horizontal-deflection system to correct for nonlinearities in thehorizontal scanning current that may result because ofvoltage drops across the inherent resistance in the tracecircuit. Voltage drops across the resistance of the trace-switch SCR and diode are held to a minimum byoperation of the trace diode at a more negative voltagethan the trace SCR. This condition is achieved by con-nection of the trace diode one turn higher (morenegative) on the high-voltage transformer than theSCR.

Fig. 17 illustrates another technique used to correctfor nonlinearity in the scanning current. This technique

uses a damped series resonant circuit (LLIN' CLIN, andRLI,,) , connected between a winding on the high-voltage transformer and the ungrounded side of theyoke-return capacitor C" to produce a damped sinewave of current that effectively adds to and subtractsfrom the charge on the yoke-return capacitor Cy• Theresulting alteration in yoke current corrects for anytrace-current nonlinearities.

ADVANTAGES OF THE SCR HORIZONTAL-DEFLECTION SYSTEM

It is apparent from the preceding discussions thatthe SCR horizontal-deflection system offers a number ofdistinct advantages over the conventional types of sys-tems currently used in commercial television receivers.The following list outlines some of the more significantcircuit features of the SCR deflection system and pointsout the advantage derived from each of them:

I. Critical voltage and current waveforms, and tim-ing cycles are determined by passive componentsin response to the action of two SCR-diodeswitches. The stability of the system, therefore, isdetermined primarily by the passive components.When the passive components are properly ad-justed, the system exhibits highly predictable per-formance characteristics and exceptional opera-tional dependability.

2. The only input drive signal required for the SCRdeflection system is a low-power pulse which hasno stringent accuracy specification in relation toeither amplitude or time duration. The deflectionsystem, therefore, can be driven directly from apulse developed by the horizontal oscillator.

3. This deflection system is unique in that, althoughit operates from a conventional B + supply of+ 155 volts, the flyback pulse is less than 500volts. This level of voltage stress is substantiallyless than that in conventional line-operated sys-tems, and this factor contributes to improvedreliability of the switching devices.

4. Regulation in the SCR deflection systelil is ac-complished by control of the energy stored by areactive element. This technique avoids the useof resistive-load regulating elements required bymany other types of systems and, therefore,makes possible higher over-all system efficiencyand reduces input-power requirements.

5. All switching occurs at the zero current levelthrough the reverse recovery of high-voltage p-njunctions in the deflection diodes. The diode junc-tions are not limited in volt-ampere switchingcapabilities for either normal or abnormal condi-tions in the circuit.

oornLJDSolid StateDivision


AN-3822

Thermal Considerations in Mounting of

RCA Thyristors

Consideration of thermal problems involved in themounting of thyristors is synonymous with considerationof the best heat sink for a particular application. Mostpractical heat sinks used in modern, compact equipmentare the result of experiments with heat transfer throughconvection, radiation, and conduction in a given appli-cation. Although there are no set design formulas thatprovide exact heat-sink specifications for a given ap-plication, there are a number of simple rules that reducethe time required to evolve the best design for the job.These simple rules are as follows:

1. The surface area of the heat sink should be aslarge as possible to provide the greatest possibleheat transfer. The area of the surface is dictatedby thyristor case-temperature requirements and theenvironment in which the thyristor is to be placed.

2. The heat-sink surface should have an emissivityvalue near unity for optimum heat transfer by radi-ation. A value approaching unity can be obtainedif the heat-sink surface is painted flat black.

3. The thermal conductivity of the heat-sink materialshould be such that excessive thermal gradients'are not established across the heat sink.

Although these rules are followed in conventionalheat-sink systems, the size and cost of such systemsoften become restrictive in compact, mass-producedpower-control and power-switching applications usingthyristors. These restrictions are overcome in RCA thy-ristors because the JEDEC TO-5 and "modified TO-5"packages shown in Figs.l and 2 are tin-plated and canbe soldered directly to a heat sink. The use of mass-

~I

3-L E AD

MODIFIED

I

2-L EAD

MODIFIED

produced prepunched parts, direct soldering, and batch-soldering techniques eliminates many of the difficultiesassociated with heat sinks by making possible theuse of a variety of simple, efficient, readily fabricatedheat-sink configurations that can be easily incorporatedinto the mechanical design of equipment.

Power Dissipotion ond Heot-Sink Areo

The curves shown in Fig.3 are designed for use withthe power-dissipation curves shown in the technical bul-letins describing the various RCA thyristors. The curvesof Fig.3 are conservative and can be used directly forthyristors having thermal-resistance ratings (Br), junc-tion-to-case, of 50 C/W or less. The curves shown inFig.4 represent the power-dissipation characteristics ofa typical thyristor. As an example of the use ofFigs.3and4, it is assumed that an appropriate heat sink must be

3663~'" O,A -l

335315 OIA

I035 •.

OIS

_ 1.-£ .~ns

6~"OIA...- CASE TEMPERATURE

QE'ER[NC[ lONE

/"" GAT(

4S0

42·.,,0~5 '~028

'"

:*' 045029

r·~~~~~:ll01'

.335 MAX.

[.315 MINo]L 01' _

.100 lMIN. .260 MAX.

~

240"".

L .•.• ISEATING PLANE

.009 TO.125 1.5

OETL~~i:SI~~~T- 0 ~N.

ZONE OPTIONAL2 LEADS

-_.019 MAX.016 MIN.

01'

OuTSIDECORNER

RADII007 MAX.

03402. ).

L .045 MAX..029 MIN

Fig.2 - Details of thyristor packages showing dimensionsand reference point for case-temperature measurement.

found for a thyristor that is to conduct a current of 2amperes. operate at an air temperature of 370C, and besoldered to the heat sink at the base of the package.From Fig.4, the maximum power dissipation in the thy-ristor is found to be 3 watts. Fig.3 shows that the max-imum allowable thermal resistance of the heat sink atthis level of power dissipation is 150 C/IV, and that asquare, dull, 1/ 16-inch-thick copper or 1/8-inch-thickaluminum heat sink with an area of at least 1-3/4 by 1-1/ 4 inches is required.

The curves of Fig.3 can also be used with thyristorshaving junction-te-case thermal-resistance ratings ofmore than SO C/IV. However, the difference between thehigher thermal-resistance value of the thyristor and thevalue of SOC/IV upon which the curves are based mustbe subtracted from the thermal-resistance values shownin Fig.3. For example, if it is assumed that the condi-tions are the same as those stated previously exceptthat the thermal resistance, junction-to-case, of the de-vice is 130 C/W, the difference in thermal-resistance

~ '0

4•I~zQ~1t~isor'g2D~::"s:"'C'caw~

AMBIENT AIR TEMPERATURE (TFAI-I 1 I I

58 104 140 176AMBIENT AIR TEMPERATURE (TFA)- of

CURRENT WAVEFORM: SINUSOIDALLOAD: RESISTIVE OR INDUCTIVECONDUCTION ANGLE: 1800

4 6 8 10 12AVERAGE FORWARD CURRENT (IFAV)-

AMPERES

values is 80 C/W. The closest value of thermal resis-tance to 80 C/W in Fig.3 is 70 C/W; therefore, a 3-3/8-by-3-3/8-inch heat sink is required.

Commercial heat sinks are available for the thyris-tor packages described; however, because the thyristorpackage is usually attached to the heat sink at the cap.the additional thermal resistance from the base of thepackage to the cap must be considered. Although thisresistance can be as high as gO C/W, it can be neglectedif it is only a small percentage of the over-all allowablethermal resistance. It should be noted that most thyris-tor thermal-resistance ratings are based on temperaturemeasurements taken at the base of the package. Thecase-temperature reference point specified on the dimen-sional outlines shown in Fig.2 should be used whentemperature measurements are made. A low-mass temp-erature probe or thermocouple equipped with wire leadsno larger than AWG No. 26 should be :employed for sys-tems with thermal-resistance values less than 500 C/W.For systems with thermal-resistance values greater than500C/W, smaller wire (such as AWG No. 36) is preferred.

Mounting Thyristors on Heat Sinks

For most efficient heat sinks, intimate contact shouldexist between the heat sink and at least one-half of thepackage base. The package can be mounted on the heatsink mechanically, with glue or epoxy adhesive, or bysoldering. If mechanical mounting is employed, siliconegrease should be used between the device and the heatsink to eliminate surface voids, prevent insulation build-up due to oxidation, and help conduct heat across theinterface. Although glue or epoxy adhesive providesgood bonding, a significant amount of resistance mayexist at the interface. To minimize this interface resis-tance, an adhesive material with low thermal resistance,such as Hysol* Epoxy Patch Material No. 6C or Wake-field* Delta Bond No. 152, or their equivalent, shouldbe used.

Soldering of the thyristor to the heat sink is prefer-able because it is most efficient. Not only is the bondpermanent, but interface resistance is easily kept below10 C/W under normal soldering conditions. Oven or hot-plate batch-soldering techniques are recommended be-cause of their low cost. The use of a self-jigging ar-rangement of the thyristor and the heat sink and a 60-40solder preform is recommended. If each unit is solderedindividually with a flame or electric soldering iron, theheat source should be held on the heat sink and thesolder on the unit. Heat should be applied only longenough to permit solder to flow freely. Because RCAthyristors are tin-plated. maximum solder wetting iseasily obtainable without thyristor overheating.

* Products of Hysol Corporation, Olean, New York andWakefield Enginli'ering, Inc., Wakefield, Massachusetts,respectively.

The special high-conductivity leads on the two-leadTO-5 package permit operation of the thyristor at cur-rent levels that would ':>e considered excessive for anordinary TO-5 package. The special leads can be bentinto almost any configuration to fit any mounting require-ment; however, they are not intended to take repeatedbending and unbending. In particular, repeated bendingat the glass should be avoided. The leads are not espe-cially brittle at this point, but the glass has a sharpedge which produces an excessively small radius ofcurvature in a bend made at the glass. Repeated bend-ing with a small radius of curvature at a fixed point willcause fatigue and breakage in almost any material. Forthis reason, right-angle bends should be made at least0.U20 inch from the glass. This practice will avoidsharp bends and maintain sufficient electrical isolationbetween lead connections and header. A safe bend canbp assured if the lead is gripped with pliers close tothe glass seal and then bent the requisite amount withthe fingers, as shown in Fig.5. When the leads of a num-ber of devices are to be bent into a particular configura-tion, it may be advantageous to use a lead-bending fix-ture to assure that all leads are bent to the same shapeand in the correct place the first time, so that there isno need for repeated bending.

Typical Heat.Sink Configurations

Typical heat-sink designs that can be used with ReAthyristors are shown in Fig.6. The case-to-air thermal-resistance value for each of the easily fabricated sinksis given, "long with approximate dimensions. The thy-ristors in the illustrations are soldered to the heat sink;if epoxy is used, an additional thermal resistance of10e/W to 20e/W must be added to the thermal-resistancevalues shown. The junction-to-case thermal-resistancevalue for the particular thyristor being used should beadded to the values shown to obtain the over-all junc-tion-to-air thermal resistance of each configuration. Inthe designs shown, electrical insulation of the heat sinkfrom the chassis or equipment housing may be required.

use the chassis or equipment housing as the heat sink.In such cases, the thyristor must be electrically insulat-ed from the heat sink, but must still permit heat generat-ed by the device to be efficiently transferred to the chas-sis or housing. This heat transfer can be achieved byuse of the heat-spreader mounting method. In this method,the thyristor is attached to a metal bracket (heat spread-er) which is attached to, but electrically insulated from,the chassis. Examples of heat spreaders are shown inFigs.6 and 7. Electrical insulation may consist of ma·terial such as alumina ceramic, polyimide film or tape,fiberglass tape, or epoxy. The metal bracket itself hasa low thermal resistance, and spreads the heat out overa larger area than could the thyristor case alone. Thelarger area in contact with the electrical insulation al-lows heat to transfer from bracket to chassis through theinsulation with relatively low thermal resistance. Typ-ical heat sinks, such as those shown in Fig.6, provide amuch lower thermal resistance when used as heat spread-ers than when used as heat sinks. Heat spreader dimen-sions can be varied over a wide range to suit particularapplications. For example, area or diameter can be in-creased, or shape changed, as long as the heat-transferarea in contact with the electrical insulation is suffi-cient. An area of 0.2 square inch or more is usually de-sirable. The exact thermal resistance of any heatspreader depends on the heat-transfer area, type of metalused, type of insulation used, and whether the thyristoris fastened to the heat spreader with solder or epoxy.Soldered construction yields a thermal resistance about10 e/w less than t!lat obtained with epoxy. Aluminaor polyimide insulation provides a thermal resistanceabout 1 to 20 e/w less than that obtained with thermo-setting fiberglass-tape insulation. The heat spreadercan be made of any material with suitable thermal con-ductivity, such as copper, brass, or aluminum. Solder-able plating for aluminum is commercially available.

A self-jigging type of copper heat spreader is shownin Fig.7. SCR's soldered to this heat spreader are availablefrom RCA as type numbers S2620B, S2620D, and S2620M.

Bibliography

J. Neilson and N. Smith, "Thermal Impedance of SiliconRectifiers," RCA Publication No. ST-2055A.

Frank D. Gross, "Semiconductor Heat-Sink DesignChart," Electronics World, January, 1965.

A. D. Marquis, "How 'Hot' Are You On Thermal Rat-ings?," Electronic Design, November 8, 1967.

e, (CASE-TO-A1R' \ I,,.'". -fJ~~~ ~:J

1_1/2"~1-'/2"

~ ~

~

II 1\ 1116' ~-:J~ II" ~./'~

11 II

~II II 1-112"

1-'/2'~

e, (CASE-TO-AIR)·30·C/W r==A~"'--"'~~

~ 11L_.,i~"~:--~~1/4" ::::::-..::::::-..:::::::::- I

~ l02"~ -::::::::..,. ~

5/8" --1--1/2~~f-1/2,,-r

8, (CASE - TO- AIR)· 39.5~

~b"> ~~l.-J-

C:~~..---::;;:; 3/4"J5/8"~

8, (CASE-TO-AIR)·

4~

~~

NOTES:

1. Products of Minnesota MInmg & Mfg. Co., St. Paul, Minnesota.

2. Solder preforma are available from RCA aa Part No.NRI84A and from the Keater Solder Co., Newark, t'I.J. 07105aa Part No.KSFD-375005.

3. This heat spreader is available from ReA as Part No.NR 1668 and from the General Stamping Co., Inc.Denvil.le, N.J. 07834 as Part No.14-110.

OO(]3LJi]Solid StateDivision


AN-3886

AC Voltage RegulatorsUsing Thyristors

This Note describes a basic ac-voltage regulatingtechnique using thyristors that prevents ac rms or devoltage from fluctuating more than ± 3 per cent in spiteof wide variations in input line voltage. Load voltagecan also be held within ± 3 per cent of a desired valuedes pite variations in load impedance through the use ofa voltage-feedback technique. The voltage regulatordescribed can be used in photocopying machines, lightdimmers, de power supplies, and motor controllers (tomaintain fixed speed under fixed load conditions).

Circuit Opera:ion

The schematic diagram of the ac regulator is shownin Fig.l. For simplicity, only a half-wave SCR con-figuration is shown; however, the explanation of circuitoperation is easily extended to include a full-wave regu-lator that uses a triac.

The trigger device Ql used in Fig.l, a diac suchas the RCA-D3202U, is an all-diffused three-layer triggerdiode. This diac exhibits a high-impedance, low-Ieakage-current characteristic until the applied voltage reaches

tELINE.

the breakover voltage VBO, approximately 35 volts.Above this voltage, the device exhibits a negative re-s istance so that voltage decreases as current increases.

Capacitor C1 in Fig.l is charged from a constant-voltage source established by zener diode Zl' Thecapacitor is charged, therefore, at an exponential rateregardless of line-voltage fluctuations. A trigger pulseis delivered to the 2N3228 SCR, Q2, when the voltageacross capacitor Cl is equal to the trigger voltage ofdiac Ql plus the instantaneous voltage drop developedacross R4 during the positive half-eycle of line voltage.When Ql is turned on, Q2 is turned on for the remainderof the positive cycle of source voltage. Control of theconduction angle of the SCR regulates rms voltage tothe load.

Regulation is achieved by the following means:When line voltage increases, the voltage across ~increases, but the charging rate of Cl remains the saTile;as a res ult, the voltage across Cl must attain a largervalue than required without line-voltage increase beforediac Ql can be triggered. The net effect is that thepulse that triggers Q2 is delayed and the rms voltageto the load is reduced. In a similar manner, as linevoltage is reduced, Q2 turns on earlier in the cycle andincreases the effective voltage across the load.

Fig.2 shows the voltage waveforms exhibited by theac regulator at both high and low line voltage. Thecharging voltage for capacitor Cl, El' is equal to thezener voltage and remains constant up to the instantthat the SCR is turned on. The capacitor voltage, VCl.increases exponentially because the charging voltageEl is constant. The voltage across resistor R4 conforms

o I 2 3 4 567 e I

LIME-MILLISECONDS I

I.-- CONDUCTION TIME ----II (LOW LINE VOLTAGE) II I

i (~~:~~°:O~i~~EiiONE HALF-CYCLE I

OF AC LINE I

Fig.2 - Yoltage waveforms exhibited by the ac regulatorin Fig. 7.

to the sinusoidal variations of the 6o-Hz line voltage.At any given phase angle, the voltage across R4 increasesif line voltage increases and decreases if line voltagedecreases.

The diac and SCR both trigger when the capacitorvoltage, VC1' equals the breakdown voltage of the diacplu~ the instantaneous value of voltage developed across~ during the positive half-eycle of line voltage. Thiscapacitor voltage is represented by points A and B forthe low and high line-voltage conditions, respectively.The instantaneous voltages across ~ just before theSCR is triggered are represen.ed by points C and D forthe low and high line-voltage conditions, respectively.The voltage difference between points A and C andbetween points Band D is equal to the breakdown volt-age of the diac.

Fig.2 illustrates that the conduction time of theSCR is decreased as line voltage increases, and isincreased when the line voltage decreases. By properselection of the values of the voltage-divider-ratio re-sistors R3 and R4, it is possible to prevent the load',oltage from varying more than 3 per cent with a 3O-per-cent (approximate) change in line voltage.

It should be mentioned that during measurementsof load voltage careful consideration must be given tothe measuring instruments. Most of the circuits describedin this Note produce a non-sinusoidal voltage across theload; the rms value of this voltage can be measuredonly with a true rms meter, sl£h as a thermocouplemeter. It is possible, however, that in certain appli-cations the low input impedance of the thermocouplemeter might load down the circuit being measured. Insuch cases, a high-input-impedance rms meter may berequired.

HEATER REGULATION

Fig.3 shows a basic regulating technique for appli-cations in which it is desired to maintain constant volt-age across a load such as a receiving-tube heater, thefilament of an incandescent lamp, or possibly a spaceheater. It should be noted that this configuration isactually a half-wave regulator. However, the circuit ofFig.3 differs from the circuit of Fig.l, in which onehalf-eycle is blocked from the load and the other half-cycle is phase-controlled to provide regulation. InFig.3, essentially full voltage is applied to the loadfor one half-cycle by means of D4; the other half-eycleis phase-eontrolled by the SCR to provide regulation.

The circuit in Fig.3 is an open-loop regulator thatfeatures a high degree of safety; i.e., an open- or short-circuited component does not result in an excessive

"-12av60Hz

C,o 47p.F"200 V

• IN THE CLOSE£rLOQP REGULATOR R6 IS REPLACED BY APHOTOCELL ReA 502520 AND A POTENTIOMETERIN SERIES WITH A G'VOLT INCANDESCENT LAMP ISCONNECTED IN PARALLEL WITH THE HEATER TERMINALSNOTE: ALL RESISTOR VALUES ARE IN OHMS

Fig.3 - A circuit using a regulator to maintain voltageconstant across a load:

load voltage. Phase-eontrolled voltage regulation isprovided by a silicon unilateral switch Ql * and a controlcircuit, as follows: Capacitor C2 is charged from a volt-age source that is maintained constant by zene:' diodeZl; diodes Dl' D2' and D3 compensate for the changein zener voitage with temperature. The voltage acrossC2 increases until the sum of the breakover vo1tage ofQl and the instantaneous voltage across R5 is exceeded.At this point, a positive pulse is coupled into the gateof Q2 by means of the pulse transformer Tl' The SCRQ2 then switches on for the remainder of the positivecycle of line voltage. Control of the conduction angleof the SCR varies rms voltage to the heater.

* A silicon unilateral switch is a silicon, planar. monolithicintegrated circuit that has thyristor electrical characteristicsclosely approximating those of an ideal four-layer diode. Thedevice shown switches at approximately 8 volts.

As line voltage increases, the voltage across R5also increases; because C2 charges along the sameexponential curve, however, the voltage across C2 mustattain a larger value before Q2 is turned on. The neteffect is a delay in the trigger pulse and reduced rmsvoltage across the heater. In a similar manner, as linevoltage is reduced, the SCR turns on earlier in the cycleand increases the effective voltage across the heater.By proper adjustment of potentiometer Flu in conjunctionwith potentiometer R4, it is possible to obtain excellentheater-voltage compensation over a range of line volt-ages. Fig.4 shows the waveforms associated with theheater-regulator circuit.

Fig.4 - Voltage waveforms exhibited by the circuit ofFig.3.

Curve A in Fig.5 shows heater voltage as a functionof line voltage for the open-loop regulator circuit shownin Fig.3. Curve B in Fig.5 shows a similar curve for aclosed-loop regulator using a lamp-photocell module.The lamp, in series with a limiting resistor, is connectedacross the heater terminals, and the photocell replacesR6. The lamp unit senses the phase-controlled truerms heater voltage. Changes in lamp brightness pro-duced by heater-voltage variations change the photocellresistance in reverse proportion to the lamp voltage. Theremainder of the circuit functions as previously describedexcept that regulation is obtained not only through themonitoring of the instantaneous magnitude of line voltage,but also through the sensing of the true rms voltageacross the heater. This characteristic identifies the

CURVE A:OPEN-LOOP REGULATIONCURVE e: CLOSED-LOOP REGULATION

6]B READINGS TAKEN AT 25"C

+3·/..

~~6t-3%T<-

~ I'20"4

( .± 10 % OF APPROXIMATELY 120 II)

5.6

Fig.5 - Heater voltage as a function of line voltage ofthe open- and closed-loop regulators.

circuit as an ac voltage regulator with closed-loopfeedback control. The closed-loop regulator producesless error, is more resistant to the drift effects of com-ponents, and is easier to adj ust than the open-loopregulator.

The lamp used in the closed-loop regulator is ratedat 6 volts, but the series resistor limits the voltage toapproximately 2 volts so that extremely long lamp lifecan be expected. An additional advantage at low voltageis that the light intensity varies linearly with the voltageacross the lamp so that a small increase in voltageincreases brightness markedly; near rated voltage theintensity does not vary linearly and the variation inbrightness is not very apparent. A loss in sensitivitywould result if the lamp were operated at its ratedvoltage.

The open-loop regulator can regulate 6 volts towithin ± 3 per cent within a temperature range from10 to 400C with an input-voltage swing of ± 10 per cent.The closed-loop regulator can regulate 6 volts to within± 2 per cent within a temperature range from 0 to 600Cwith an input-voltage swing of ± 10 per cent.

Light-dimmer circuits are becomingly increasinglypopular for home use. Fig.6 shows a typical light-dimmer configuration. This circuit provides the ad-vantages of low hysteresis and continuous control up tothe maximum conduction angle. At low illumination·

levels, however, the variable resistor Rp is adjusted toa high resistance setting. If a momentary drop in linevoltage occurs at this condition, the high breakovervoltage of the diac in conjunction with the high re-sistance coold result in a circuit misfire; i.e., the lightcould be extinguished and remain so until the circuitis reset by readjustment of the control to a high illumi-nation setting.

A natural successor to the circuit of Fig.6 mightconsist of a configuration which not only provides thelight-dimming function but also extends the life of thelamp being controlled. One of the major causes of re-duced lamp life can be directly attributed to line-voltagefluctuations and in particular to periods of over-voltage.

ominal line voltage is approximately 120 volts ± 10per cent; it is the + 10-per-eent variation that causeslamps to reach end-of-life prematurely.

A technique for limiting or clamping the lamp volt-age, without sacrificing any of the desirable features ofthe dimmer of Fig.6, is shown in Fig.7; LF and CFsuppress rf interference. Fig.7 employs the basic regu-lating circuit described earlier; however, in the con-figuration shown, the switching voltage of Ql, a siliconbilateral switch,* is reduced by steering diodes 01 and02 in conjunction with resistor R. This arrangement not

CFOI .•.•.F200V

IK 02Il2w ReA

01 r - *, T28008 M12

SILICON BILATERAL I !50K

SWITCH L __ ~POT

ZI r-120V 12v :60Hz 400mWI

22 :12\1 I

400mWIL_

r- --,,L -J

01 02TYPE TYPE

IN3193 IN3193

*OASHED LINES INDICATE MAJORADDITIONAL COMPONENTS REQUIREDTO ACHIEVE VOLTAGE CLAMPNOTE ALL RESISTOR VALUES ARE IN OHMS

only makes it possible to achieve larger conductionang les, but also prevents the circuit from misfiring atlow illumination levels when it is subjected to dips inline voltage. The light-dimmer circuit in Fig.7 is capa-ble of clamping the high-line-voltage condition to within+3 per cent of its nominal value; as a result, the lamp

* A silicon bilateral s\\'itch is a silicon, planar, monolithicintegrated circuit that switches at approximately 8 volts inboth diI'€'ctions.

is subjected to voltages of 120 volts plus 3 per cent andminus 10 per cent. The - lQ-per-eent line dip has littleeffect on lamp-life reduction.

The circuit also regulates lamp voltage for varioussettings of potentiometer Rp. Fig.8 shows line voltageas a function of lamp voltage for two settings of Rp forthe circuits of Figs.6 and 7. These curves illustrate theincreased regulation achieved by the improved circuit.

FULL BRIGHTNESS

I

f3"

/?'.....,./> ..- I.- I

_'-- ----.- 30Y.--_

I90

w

"c~ 60

~~~ <0t-

':LI

III" ,

IOIAC FAILED I

:TO TRIGGER:

II

Fig.8 - Lamp voltoge as a function of line voltage fortwo values of Rp in the circuits of Figs.6 and 7.

The dimmer configuration of Fig.7 can also be usedas a 12Q-volt full-wave heater regulator. In this appli-cation the light is replaced by a heater load. If the loadcan be operated at a nominal 100 volts with an inputvoltage of 120 volts. more symmetrical regulation can berealized; i.e., ±3 per cent regulation can be achievedwith a line variation of ± 10 per cent. In the full-waveheater-regulator application, diodes 01' 02' and resistorR in Fig.7 can be eliminated because a wide conductionangle is not required.

Such a control might also be used in colorimetry, anapplication in which it is necessary to match the color(and temperature) of a lamp with a standard; in this ap-plication line-voltage fluctuations can create a measure-ment error. Other areas of application, such as photo-graphy, heater control, and hot-plate and solder-pot con-trol, can also make effective use of the dimmer circuitwith over-voltage clamp.

VOL TAGE·REGULATED DC SUPPLY

A simple but stable dc power supply us ing thyris-tors is shown in Fig.9. The power-supply section con-sists of the well known full-wave bridge with RC filter.

z,,z V4QQmW

C,0.1 ~F20Cv

c.o 22 ~F

200v

05TYPEIN3193

06TYPE

IN3193

-Cz022,.,.F200 V

A line-voltage tl'ansformer is employed to step-down thesupply voltage of 120 volts rms to approximately 12.5volts rms. If a dc output voltage greater than 10 voltsis desired, a transformer with a lower primary-to-second-ary turns ratio should be employed.

The heart of the regulator shown in Fig.9 is thephase-controlled triac on the primary side of the linetransformer. Because the load presented to the triac issomewhat inductive, an RC network is liSed to assure(X"opercommutation; LF and CF sup(X"ess rf interference.The circuit automatically compensates for wide varia-tions in line voltage. Fig.10 shows a curve of line volt-age as a function of load voltage, Edc' for a constantload of 10 ohms. Fig.ll shows the voltage waveformsassociated with the circuit of Fig.9.

oco..J ~.6

70

Fig.IO - Load voltage as a function of line voltage for thecircuit of Fig.9; load resistance is constant at 10 ohms.

If increased line, temperature, and load conpensa-tion is desired in the regulated dc supply of Fig.9, aclosed-loop type of control can be obtained by use of aphotocell in place of RF and connection of a lamp acrossthe output terminals of the supply in such a way that thelight from the lamp can impinge on the photocell surface.

Fig.11 • Voltage waveforms exhibited by the circuit ofFig.9.

Other thyristors than those shown in this Note canalso be used for voltage regulation. The selection of anSCR or triac for a particular regulating circuit depends

on the voltage and current requirements of the applica-tion. The quick-selection charts shown below indicatethe capabilities of RCA thyristors for this type of usage.

Triac Quick·Selection Chart SCR Quick-Selection Chart

r:: O.35A 6A lOA 15A 30A 40A 2A 5A 12.5A 15A 25A 35A0~ ''';:

T2300B T2700B 2N5567 2N5571 T6401B 2N5441 2N3528 2N3228 2N3669 2N1846A 1N685 2N3871_ ao ~> ~ T2302B T2710B 2N5569 2N5573 T6411B 2N5444 52710B 2N389760 T2310B T4700B 53700BN ••~ " T2312B..J

r:: T23000 T27000 2N5568 2N5572 T64010 2N5442 2N3529 2N3525 2N3670 2N1849A 2N688 2N38720- 0';: T23020 T27100 2N5570 2N5574 T6411D 2N5445 527100 2N3898_ 0o ~

T23100 T47000 537000> ~60 T23120...• ..N r::

..J

ffil(]5LJDSolid StateDivision Application Note

AN-4124

Handling and Mounting ofReA Molded· PlasticTransistors and Thyristors

RCA power transistors and thyristors (SCR's and triacs) inmolded -silicone-plastic packages are available in a wide rangeof power-dissipation ratings and a variety of package con-figurations. This Note provides detailed guidelines forhandling and .mounting of these plastic-package devices, andshows different types of packages and suggested mountinghardware to accommodate various mounting arrangements.Recommendations are made for handling of the packagesduring the forming of le"ds to meet specific mountingrequirements. Various mounting arrangements, thermal con-siderations, and cleaning methods are described. This infor-mation is intended to augment the data on electricalcharacteristics, safe operating area, and performancecapabilities in the technical bulletin for each type ofplastic-package transistor or thyristor. (Data on mechanicaland environmental capabilities of RCA plastic-packagetransistors are also available in a periodically updatedReliability Report, RCA Publication No. HBT-600.)

TYPES OF PACKAGES

Two basic types of molded-plastic packages are used for RCAsolid-state power devices. These types include the RCAVersawatt packages for medium-power applications and theRCA high-power plastic packages, both of which arespecifically designed for ease of use in many applications.Each basic type offers several different package options, andthe user can select the configuration best suited to hisparticular application.

Figs. I through 3 show the options currently available fordevices in RCA Versawatt packages. The JEDEC TypeTO-220AB in-line-lead version, shown in Fig. I, representsthe basic style. This configuration features leads that can beformed to meet a variety of specific mounting requirements.Fig. 2 shows a package configuration that allows a Versawattpackage to be mounted on a printed-circuit board with aO.lOO-inch grid and a minimum lead spacing of 0.200 inch.Fig. 3 shows a JEDEC Type TO-220AA version of theVersawatt package. The dimensions of this type of transistorpackage are such that it can replace the JEDEC T0-66transistor package in a commercial socket or printed-circuitboard without retooling. The pin-connection arrangement

of thyristors supplied in TO-220AA packages, however,differs from that of thyristors supplied in conventionalT0-66 packages so that some hardware changes are requiredto effect a replacement. The TO-220AA Versawatt package isalso supplied with an integral heat sink. Fig. 4 shows thedimensional outline for this heat sink. The use of the integralheat sink reduces the junction-to-air thermal resistance of thepackage from 700C per watt to 350C per watt.

The RCA molded-plastic high-power packages are alsosupplied in several configurations for flexibility of applica-tion. The JEDEC Type TO-219AB, shown in Fig. 5, is thebasic high-power plastic package. Fig. 6 shows a JEDEC TypeTO-219AA version of the high-power plastic package.

L~ H:] '/""0' Ix -L

IEAT,HGPLAHE A .L~ ", , ,+F I

~P Ll,~*=r-i j

I~I~I. <ISo ~ b2! ) POSITION OF LEADS TO BEI MEASURED AT THIS PLANE

INCHESSYMBOL

MIN. MAX.

A .140 .190, .020 .038

'I .012 .045

'2 .045 .0700 .560 .625d .080 .115E .330 .420E, .365 .385E2 .300 .320

INCHESSYMBOL

MIN. MAX.

, .190 .210

" .090 .110F .045 .055H .230 .270L .SlID .562LI .250

~p .139 .1470 .040 .060Z .100 .120

Fig. 1 - Dimensional outline of the JEDEC TO-220ABin-line-lead Versawatt transistor package.

SYMBOLINCHES

MIN. MAXA .140 .190B .850b .045 .070bl .015 .030b2 .020 .038L . 30 .270, .180 .220

'1 .130 .1700 .560 .625E .330 .410E, .365 .385E2 300 .320

~,~~./" Y

SYMBOLINCHES

MIN. MAX, .190 .210

'1 .090 .110

'2 .203 .243

'3 .190 .200F .045 .070H .230 .270K .080 .085l, .070 .090+p .139 .1470 .040 .060S .655 .685Z 100 .120

Fig. 2 . Dimensional outline of Versawatt transistor packagedesigned for mounting on printed-circuit boards.

I'-=:]~

SECTIONX~

SYMBOLINCHES

MIN. MAX.A . 140 .190b .020 .038b .012 .045b2 .045 .0700 .560 .625d .080 .115E .330 .420E, .365 .385E2 .300 .320. .190 .210

SYMBOLINCHES

MIN. MAX.

F .045 .055H .230 .270l .360 .422l .050

<t>p .139 .1470 .6100, .040 .060S .580 .610Z .100 .lZ0

Fig. 3 . JEDEC TO·220AA Versawatt transistor packagedesigned for direct replacement of the JEDEC T0-66package.

SECTION A-A

~

:9g:-t::;;-0962

0958

844B452

~

03780387

MEASURED 27

fAT BOTTOM

g~~ 01;80502

f-gmj~O.75 g.~~~

ALL DIMENSIONS ARE IN INCHES UNLESS OTHERWISE SHOWN. TOlERANCE.S ARE:

!002 fOR 2ND PLACE; !O.005 fOR 3RO PLACE AND ~112· fOR ANGULAR

DIMENSION .

Fig. 4 - Integral heat sink used with the TO-220AAVersawatt package shown in Fig. 3.

SYMBOLINCHES

MIN. MAX.A .160 .200B .045 .060C .025 .0450 .890. .91001 .480 .515d .100 .120E .480 .520F .055 .070II .415 .560p .128 .1509 .740 .760S .500 .sZO

LI BASE

1_Fig. 5 - JEDEC TO-219AB high-power molded-plastic tran-sistor package.

~Ll+ - P E_:=1

5YMBOL INCHE5MIN. MAX.

A .160 .200B .045 .060C .025 .0450 .890 .91001 .480 .515E .480 .520

--- -INCHES-SYMBOL

MIN. MAX--;- .460 .505F .055 .070L .370 .450p .128 .150

• .740 .7605 .500 .520

Fig. 6 -JEDEC TO·219AA plastic package designed for useasa direct replacement for the hermetically sealed JEDECTO·3 transistor package.

The RCA high·power plastic package is also available with anattached header·case lead, as shown in Fig. 7. This three-leadpackage is designed for mounting on a printed·circuit board.

LEAD·FORMING TECHililQUESRCA Versawatt plastic packages are both rugged and versatilewithin the confines of commonly accepted standards forsuch devices. Although these versatile packages lend them-selves to numerous arrangements, provision of a wide varietyof lead configurations to conform to the specific require·men"ts of many different mounting arrangements is highlyimpractical. However, the leads of the Versawatt in-linepackage can be formed to a custom shape, provided that theyare not indiscriminately twisted or bent. Although theseleads can be formed, they are not flexible in the generalsense, nor are they sufficiently rigid for unrestrained wirewrapping.Before an attempt is made to form the leads of an in-linepackage to meet the requirements of a specific application,the desired lead configuration should be determined, and alead-bending fixture should be designed and constructed. The

TSEATINGPLANE

ALL DIMENSIONS IN INCHES

Fig. 7 . TO·219AA plastic transistor package designed formounting on printed-eircuit boards.

use of a properly designed fixture for this operationeliminates the need for repeated lead bending. When the useof a special bending fixture is not practical, a pair oflong·nosed pliers may be used. The pliers should hold thelead firmly between the bending point and the case, butshould not touch the case. Fig. 8 illustrates the use oflong-nosed pliers for lead bending. Fig. 8(a) shows techniquesthat should be avoided; Fig. 8(b) shows the correct method.

'9LEAD IS NOT RESTRAINED BETWEENBENDING POINT AND PLASTIC CASE.

Fig. 8 - Use of long-nosed pliers for lead bending: (a)incorrect method; (b) correct method.

When the leads of an in-line plastic package are to be formed,whether by use of long·nosed pliers or a special bendingfixture, the following precautions must be observed to avoidinternal damage to the device:

I. Restrain the lead between the bending point andthe plastic case to prevent relative movementbetween the lead and the case.

2. When the bend is made in the plane of the lead(spreading), bend only the narrow part of the lead.

3. When the bend is made in the plane perpendicularto that of the leads, make the bend at least 1/8inch from the plastic case.

4. Do not use a lead-bend radius of less than 1/16inch.

5. Avoid repeated bending of leads.

The leads of the TO-220AB Versawatt in-line package are notdesigned to withstand. excessive axial pull. Force in thisdirection greater than 4 pounds may result in permanentdamage to the device. If the mounting arrangement tends toimpose axial stress on the leads, some method of strain reliefshould be devised. Fig. 2 illustrates an acceptable lead-forming method that proVides this relief.

Wire wrapping of the leads is permissible, provided that thelead is restrained between the plastic case and the point ofthe wrapping. Soldering to the leads is also allowed; themaximum soldering temperature, h<Jwever, must not exceed2750C and must be applied for not more than 5 seconds at a

SCREW 632~N()T"'\lA;lA8L(f_OlC"

~

NR231A6 RECTANGULAR METAL

WASHER

~

::~:,~:::;,~:,,,",,I MICA INSULATOR

/HOLEDIA.-O.1450.141m

06 (3~:~~·~,';:2(vICE

6 HEAT SINK

<3'CHASSIS'

6 495334·7& INSULATING BUSHING

I. D .•• 0.156 ,n. (4.00 mm)

S-- ~~~~i~~~6~4gl:~~ MAX.

SHOULDER THICKNESS"

METAL WASHER e) ~~~~~~·~I~:~E::~MAX

LOCK WASHER SHEX NUT @ ~OT A,VAILA8LE fROM ReA fe)

SOLDER LUG ....:2..HEXNUT @

In the UnIted Kingdom, Europe, M,ddle East, and Africa, mounting-hardware policies may differ; check the availability of all itemsshown with your ReA sales representative or supplier.

distance greater than 1/8 inch from the plastic case. Whenwires are used for connections, care should be exercised toassure that movement of the wire does not cause movementof the lead at the lead-to-plastic junctions.

The leads of the RCA molded-plastic high-power packagesare not designed to be reshaped. Simple bending of the leads,however, is permitted to change them from a standardvertical to a standard horizontal configuration, or conversely.Bending of the leads in this manner is restricted to three90-degree bends; repeated bendings, therefore, shauld beavoided.

~SC.EW •••• O

~

NOT SUPPLIED WITH DEVICE

• . DF137A- INTEGRAL9-INSUlATING WASHER

DF103Ce MICA INSULATOR

G (HOLE FOR 4-40 SCREW)

cr·"",",METAL WASHE. @) }

lOCK WASHER @HEX. NUT @ NOT SUPPLIED WITH DEVICE

'OLOE. LUG ~

HEX. NUT @ (b)

HR231.\REC"':ANCUlAR METALWASHER

AVAILABLE AT PUBLISHED

HARDWARE PRICES

::;'~':.~;:.,,","o~.

Fig. 9 - Mounting arrangements for Versawatt transistors: (a)and (b) methods of mounting in-line-lead types; (c) chassismounting; (d) mounting on printed-eircuit boards.

Fig. 9 shows recommended mounting arrangements andsuggested hardware for the Versawatt transistors. The rec-tangular washer (NR23IA) shown in Fig. 9(a) is designed tominimize distortion of the mounting flange when thetransistor is fastened to a heat sink. Excessive distortion ofthe flange could cause damage to the transistor. The washer isparticularly important when the size of the mounting holeexceeds 0.140 inch (6-32 clearance).l.arger holes are neededto accommodate insulating bushings; however, the holesshould not be larger than necessary to provide hardwareclearance and, in any case, should not exceed a diameter of0.250 inch. Flange distortion is also. possible if excessivetorque is used during mounting. A maximum torque of 8inch-pounds is specified. Care should be exercised to assurethat the tool used to drive the mounting screw never comesin contact with the plastic body during the driving operation.Such contact can result in damage to the plastic body andinternal device connections. An excellent method of avoidingthis problem is to use a spacer or combination spacer-isolating bushing which raises the screw head or nut abovethe top surface of the plastic body, as shown in Fig. 10. Thematerial used for such a spacer or spacer-isolating bushingshould, of course, be carefully selected to avoid "cold flow"and consequent reduction in mounting force. Suggestedmaterials for these bushings are diallphthalate, fiberglass-filled nylon, or fiberglass-filled polycarbonate. Unfilled nylonshould be avoided.

Modification of the flange can also result in flange distortionand should not be attempted. The transistor should not besoldered to the heat sink by use of lead-tin solder because theheat required with this type of solder will cause the junctiontemperature of the transistor to become excessive.

The TO-220AA plastic transistor can be mounted incommercially available T0-66 sockets, such as UID Elec-tronics Corp. Socket No. PTS4 or equivalent. For testingpurposes, the TO-220AB in-line package can be mounted in aJetron Socket No. CD74-104 or equivalent. Regardless of themounting method, the following precautions should betaken:

I. Use appropriate hardware.

2. Always fasten the transistor to the heat sink beforethe leads are soldered to fixed terminals.

3. Never allow the mounting tool to come in contactwith the plastic case.

4. Never exceed a torque of 8 inch-pounds.

5. Avoid oversize mounting holes.

6. Provide strain relief if there is any probability thataxial stress will be applied to the leads.

7. Use insulating bushings to prevent hot-creepproblems. Such bushings should be made ofdiallphthalate, fiberglass-filled nylon, or fiberglass-filled polycarbonate.

Fig. II shows the recommended hardware and mountingarrangements for RCA high-power molded-plastic transistors.These types can be mounted directly in a socket similar tothat shown in Fig. II (b). The precautions listed for theVersawatt packages should also be followed in the mountingof the high-power molded-plastic packages.

y"." ....~ SHOULDER BUSHING

Fig. 10 - Mounting arrangements in which an isolatingbushing is used to raise the head of the mounting screwabove the plastic body of the Versawatt transistor.

The maximum allowable power dissipation in a solid-statedevice is limited by its junction temperature. An importantfactor to assure that the junction temperature remains belowthe specified maximum value is the ability of the associatedthermal circuit to conduct heat away from the device.

When a solid-state device is operated in free air, without aheat sink, the steady-state thermal circuit is defined by thejunction-to-free-air thermal resistance given in the publisheddata on the device. Thermal considerations require thatthere be a free flow of air around the d'evice and that thepower dissipation be maintained below that which wouldcause the junction temperature to rise above the maximumrating. When the device is mounted on a heat sink, however,care must be taken to assure that all portions of the thermalcircuit are considered.


2 HEX. NUTS @1 SOLDER LUG ~

2HEX.NUTS @

2 METAL WASHERS

2 LOCK WASHERS @2 HEX. NUTS ®

, SOLDER LUG ~

2 HEX. NUTS@

bSocket No. LS T ~ 1702-1 (IndustrialHardware Corp.,109 Prince St., N.Y., N.Y.or equivalent)

Fig. 11 - Mounting arrangements for high-power plastic-packagetransistors: (a) chassis mounting; (b) socket mounting; (c) printed-circuit-board mounting.

Fig. 12 shows the thermal circuit for a heat-sink-mountedtransistor. This figure shows that the junction-to-ambientthermal circuit includes three series thermal-resistance com-ponents, i.e., junction-to-case, IJJ-C; case-to-heat-sink,lJc_s;and heat-sink-to-ambient,1J S-A. The junction-to-case thermalresistance of the various transistor types is given in theindividual technical bulletins on specific types. The heat-sink-to-ambient thermal resistance can be determined fromthe technical data provided by the heat-sink manufacturer, orfrom published heat-sink nomographs. The case-to-heat-sinkthermal resistance depends on several factors, which includethe condition of .the heat-sink surface, the type of materialand thickness of the insulator, the type of thermal com-pound, the mounting torque, and the diameter of themounting hole in the heat-sink_

TJ = junction temperatureT C = case temperatureTS = heat-sink temperatureTA= ambient temperature()J/C = junction-ta-case thermal resistance0e/s = case-to-heat-sink thermal resistance(JS/A= heat~sink-to-ambient thermal resistance

Fig. 12 - Thermal equivalent circuit for a transistor mountedon a heat sink_

Fig. 13 shows a set of curves of typical case-to-heat-sinkthermal resistance of the Versawatt transistor as a functionof mounting torque for several mounting arrangements.Curves A through D show typical case-to-heat-sink thermalresistance for the mounting arrangements shown in Figs. 9(a)through 9(d). Curves E and F are representative of aVersawatt transistor mounted over a heat-sink mounting holethat has a diameter of 0.140 inch (No.6 screw clearance).Curve E shows the wide variation in thermal resistance withtorque when the transistor is mounted dry. Curve F showsthe effect on con tact thermal resistance of a thin layer ofDow Corning No. 340 silicone grease applied betweentransistor and heat sink. For torques within the recom-rr:ende'd range of 4 to 8 inch-pounds, contact thermalresistance is reduced to between 18 and 25 per cent of thedry values.

The curves shown in Fig. 14 represent typical case-to-heat-sink thermal resistance of the high-power molded-plastictransistor package as a function of mounting torque. Thethermal resistances shown by curves A and C are representa-tive of the mounting arrangements shown in Fig_ II (a)through 11 (c). Curves B and D are typical for mountingwithout mica over heat-sink mounting holes that have adiameter of 0.113 inch (No.4 screw clearance). The effect ofa thin layer of silicone grease on contact thermal resistance isillustrated by a comparison of curves Band D.

Operation of the transistor with heat-sink temperatures of1000C or greater results in some shrinkage of the insulatingbushing normally used to mount power transistors. Thedegradation of con tact thermal resistance (refer to Figs. 13and 14) is usually less than 25 per cent if a good thermalcompound is used. (A more detailed discussion of thermalresistance, including nomographs, can be found in the RCASolid State Power Circuits, Technical Series SP-52.)

During the mounting of RCA molded-plastic solid-statepower devices, the following special precautions should betaken to assure efficient heat transfer from case to heat sink:

I. Mounting torque should be between 4 and 8inch-pounds.

2. The mounting holes should be kept as small aspossible.

3. Holes should be drilled or punched clean with noburrs or ridges, and chamfered to a maximumradius of 0.010 inch.

4. The mounting surface should be flat within 0.002inch/inch.

5. Thermal grease (Dow Corning 340 or equivalent)should always be used (on both sides of theinsulating washer if one is employed).

6. Thin insulating washers should be used (thicknessof factory-supplied mica washers ranges from 2 to 4mils).

7. A lock washer or torque washer should be used,together with materials that have sufficient creepstrength to prevent degradation of heat-sinkefficiency during life.

A wide variety of solvents is available for degreasing and fluxremoval. The usual practice is to submerge components in asolvent bath for a specified time. From a reliability stand-point, however, it is extremely important that the solvent,together with other chemicals in the solder-deaning system(such as flux and solder covers), not adversely affect the lifeof the component. This consideration applies to all non-hermetic and molded-plastic components.

It is, of course, impractical to evaluate the effect onlong-term transistor life of all cleaning solvents, which aremarketed under a variety of brand names with numerousadditives. These solvents can, however, be classified withrespect to their component parts, as either acceptable orunacceptable_ Chlorinated solvents tend to dissolv-:lthe outerpackage and, therefore, make operation in a humid atmos-phere unreliable. Gasoline and other hydrocarbons cause theinner encapsulant to swell and damage the transistor. Alcoholand unchlorinated freons are acceptable solvents_ Examplesof such solvents are:

Alpha Reliaros No. 320-33

Alpha Reliaros No. 346Alpha Reliaros No. 711

Alpha Reliafoam No. 807

Alpha Reliafoam No. 809Alpha Reliafoam No. 811-13

Alpha Reliafoam No. 815-35

Alcohol (isopropanol, methanol, and specialdenatured alcohols, such as SDAI, SDA30,SDA34, and SDA44)

Care must also be used in the selection of fluxes in thesoldering of leads. Rosin or activated rosin fluxes arerecommended, while organic or acid fluxes are not. Ex-amples of acceptable fluxes are:

If the completed assembly is to be encapsulated, the effecton the molded-plastic transistor must be studied from both achemical and a physical standpoint.

A

C---r-,I-

F

o2 • 6

MOUNTING TORQUE-iN-LBS

MOUNTING HEAT SINK MICACURVE ARPoANGEMENT HOLE THICKNESS THERMAL

FIGURE DIA.UN.) IMILS) COMPOUND

A 9(.) .250 4 Dow Corning No.340

B 91b; .113 4 Dow Corning No.340

C 91.) .250 2 Dow Corning No.340

0 91b) .113 2 Dow Corning No.340

E - .140 None None

F - .140 None Dow Corn in9 No.340

Fig. 13 - Typical case·to-heat-sink thermal resistance as afunction of mounting torque for an RCA Versawatt tran-sistor.

MOUNTING MICACURVE ARRANGEMENT THICKNESS THERMAL

FIGURE IMILSI COMPOUND

A 11(01 thru 11 (0) 4 Dow Corning No.340

B - None NoneC 111.1 thru 11Ie), 2 Dow Corning No.3400 - None Dow Corning No.340

Fig. 14 - Typical case-to-heat thermal resistance as a functiond mounting torque for an RCA high-power plastic-packagetransistor.



AN-4242

A Review of ThyristorCharacteristics and Applications

Thyristors, both SCR's and triacs, are now widely acceptedin power-control applications. With the emphasis in suchapplications placed on low cost, small package size, andcircuit simplicity, thyristors satisfy these requirements withreliability exceeding that of electromechanical counterparts.This ote describes the operation. ratings. characteristics.and typical applications of these devices.

Thyristors arc semiconductor devices that have character-istics similar to those of thyratron lubes; more specifically,they arc semiconductor switches whose bistable statedepends on the regenerative feedback associated with ap·n-p-n structure. Basically, this group includes any bistablesemiconductor device that has three or more junctions (i.e .•four or more semiconductor layers) and can be switchedfrom a high-impedance (OFF) state to a conducting (ON)state, and from the conducting (ON) state to the high-impedance (OFF) state, within at least one quadrant of theprincipal-voltage characteristics.

There are several types of thyristors, which differ primarilyin number of electrode terminals and operating character-istics associated with the third quadrant (negative) of thevol tage-current characteristics_ Reverse-blocking triodethyristors, commonly called silicon controlled rectifiers(SCR's), and bidirectional triode thyristors, referred to astriacs, are the most popular types. Silicon controlledrectifiers have satisfied the requirements of many power-switching applications with much greater reliability thanelectromechanical or tube counterparts. As the use of SCR's

in power applications increased, the need for complete accont rol became apparent. The new family of thyristordevices generated to provide bidirectional current propertiesis referred to as triacs. A triac can be considered as twoparallel SCR's (p-n-p-n) oriented in opposite directions toprovide symmetrical bidirectional characteristics.

Two-Transistor Analogy

The bistable action of thyristors can be explained by analysisof the structure of an SCR. This analysis can be related toeither operating quadrant of a triac because a triac isessentially two parallel SCR's oriented in opposite directions.A two-transistor analogy of an SCR is illustrated in Fig. I.Fig. I (a) shows the schematic symbol for an SCR, and Fig.l(b) shows the p-n-p-n structure the symbol represents. Inthe two-transistor model for the SCR shown in Fig. l(c), theinterconnections of the two transistors are such that regen-erative action can occur when a proper gate signal is appliedto the base of the lower n-p-n transistor.

In the diagram of Fig. 2, the emitter of the upper (p-n-p)transistor is returned to the positive terminal of a dc supplythrough a limiting resistor R2, and the emitter of the lower(n-p-n) transistor is returned to the negative terminal of thede supply to provide a complete electrical path. When themodel is in the OFF state, the initial principal-current flow iszero. If a positive pulse is then applied to the base of then-p-n transistor, the transistor turns on and forces thecollector (which is also the base of the p-n-p transistor) to alow potential; as a result, current (la) begins to flow.Because the p-n-p transistor is then in the active state,

collector current (IC] = Ib2) flows into the base of the n-p-ntransistor and sets up the conditions for regeneration. If theexternal gate drive is removed, the model remains in the ONstate as a result of the division of currents associated with thetwo transistors, provided that sufficient principal current (Ia)is available.

~OO, '0

GATE I

~

CATHODE i'i:~: t 'bl" "I "(01 '"

~~ .. pip

, GATE I'

GATE n

(bl : CATHODE

~o

CATHODE

(<I

Fig_ 1 - Two-transistor analogy of an SCR: (a) schematicsymbol of SCR; (b) p-n-p-n structure represented by schema-tic symbol; (c) two-transistor model of SCR.

Theoretically, the model shown in Fig. 2 remains in the ONstate until the principal current flow is reduced to zero.Actually, turn-off occurs at some value of current greaterthan zero. This effect can be explained by observation of thedivision of currents as the value of the limiting resistor isgradually increased. As the principal current is graduallyreduced to the zero current level, the division of currentswithin the model can no longer sustain the requiredregeneration and the model reverts to the blocking state.

The two-transistor model illustrates three features of thyris-tors: (I) a gate trigger current is required to initiateregeneration, (2) a minimum principal current (referred to as"latching current") must be available to sustain regeneration,and (3) reduction of principal-current flow results in turn-offat some level of current flow (referred to as "holdingcurrent") slightly greater than zero.

Fig.2 - Two-transistor model connected to show a completeelectrical path.

Fig. 3 illustrates the effects on latching and holding currentfor resistive termination at the base of the n-p-n transis-tor. The collector curren t through the p-n-p transistor mustbe increased to supply both the base current for the n-p-ntransistor and the shunt current through the terminatingresistor. Because the principal-current flow must be increasedto supply this increased collector current, latching andholding current requirements also increase. The usc of thetwo-transistor model provides a more concise mcaning to themechanics of thyristors. In thyristor fabrication, it isgenerally good practice to use a low-beta p-n-p unit and toinclude internal resistance termination for the base of then-p-n unit. Termination of the n-p-n unit provides immunityfrom "false" (non-gated) turn-on. and the use of the low-betap-n-p units permits a wider base region to be used to supportthe high voltage encountered in thyristor applications.

Fig.3 - Two-transistor model of SCR with resistive termina-tion of the n-p-n transistor base.

Voltage and Temperature Ratings

The effects of temperature and voltage are important inthyristors because these deviccs posscss regenerative actionand are required to support high voltage in the OFF state. Inthe two-transistor model shown in Fig. 2, an increase intemperature causes a leakage current which, if allowed tomigrate to the base of the n-p-n transistors, forces thetransistor into the active region. Regenerative action thencalls for additional leakage current, and causes the model toswitch into the ON state and establish a principal-currentflow. For reliable operation at high temperature, the base ofthe n-p-n transistor should be terminated with a low value ofresistance to prevent turn-on as a result of. high-temperatureoperation.

Because gate termination is required on all thyristors, ReAdevices contain a diffused internal gate-cathode resistor (theso-called "shorted-emitter" design) and do not requireexternal gate termination. Therefore, it is not necessary tospecify an OFF-state rating under the conditions of externalgate-resistance termination. The use of this internal shuntresistance improves the OFF -state blocking capability,provides increased immunity against false turn-on, andslightly increases gate-current requirements.

OFF-state voltage ratings of thyristors are specified for bothsteady-state and transient operation for both forward(positive) and reverse (negative) '-'locking conditions at themaximum junction temperature. For SCR's, voltages areconsidered to be forward (positive) when the anode is at apositive potential with reference to the cathode. Negativevoltages are referred to as reverse-blocking voltages. For(riacs, voltages are considered to be positive when mainterminal 2 is at a positive potential with reference to mainterminal I; this condition is referred to as first-quadrant (I)operation. Third-quadrant (III) operation occurs when mainterminal 2 is at a negative potential with reference to mainterminal I. Fig. 4 shows the principal voltage-currentcharacteristics for both SCR's and triacs. .

REVERSEBREAKOVERVOL lAGE

ON STATE

V HOLDING!/CURRENT-----

~::;-2--CURRENT

ON STATe

OUADRANT.mIU.lN TERMINAL 2 NEGATIVE

Fig.4 - Principal voltage-current characteristics of sews andtriacs.

Operation of an SCR under reverse-blocking voltage is similarto that of a reverse-bi3sed silicon rectifier or other semicon-ductor diodes. In this operating mode, the SCR exhibits avery high internal impedance, and a small reverse currentflows through the p-n-p-n structure until the reverse break-down voltage is reached, at which time the reverse currentincreases rapidly. For forward (positive) operation, the SCRis electrically bistable and exhil:its either high impedance(forward-blocking or OFF state) or low impedance (forward-conducting or ON state). In the forward-blocking state, asmall leakage current, considered to be of approximately thesame value as that for reverse leakage, flows through thep-n-p-n structure. As the forward voltage is increased, a"breakdown" point is reached at which the forward currentincreases rapidly and the voltage across the SCR decreasesabruptly to a very low voltage, referred to as the forward ON

voltage. When the SCR is in the ON state, the forwardcurrent is limited primarily by the impedance of the ext~rnalcircuit. Increases in forward (principal) current are accom-panied by only a slight change in ON-state voltage.

If the triac is considered as two parallel SCR's oriented inopposite directions to provide symmetrical curreilt flow, thebehavior of a triac under positive or reverse voltage operationis essentially the same as that of an SCR in the forward-blocking mode.

Gate Characteristics

The breakover voltage of a thyristor can be varied, orcontrolled, by injection of a signal at the gate terminal. Fig. 5

Ig4 ICj3 192 191"°

THYRISTOR BREAKQvER AS FUNCTION OF GATE CURRENT

shows curves of breakover as a function of gate current forfi~st-quadrant operation of an SCR. A similar set of curvescan be drawn for both the first and the third quadrant torepresent triac operation.

When the gate current 19 is zero, the applied voltage mustreach the breakover voltage of the SCR or triac beforeswitching occurs. As the value of gate current is increased,however, the ability of a thyristor to support applied voltageis reduced and there is a certain value of gate current atwhich the behavior of the thyristor closely resembles that ofa rectifier. Because thyristor turn-on, as a result of exceedingthe breakover voltage, can p,oduce instantaneous powerdissipation during the switching transition, an irreversiblecondition may exist unless the magnitude and rate of rise ofprincipal current is restricted to tolerable levels. For normaloperation, therefore, thyristors are operated at appliedvoltages lower than the breakover voltage, and are made toswitch to the ON state by gate signals of sufficient amplitudeto assure complete turn-on independent of the appliedvoltage. Once the thyristor is triggered to the ON state, theprincipal-current flow is independent lJf gate voltage or gatecurrent, and the device remains in the ON state until theprincipal-current flow is reduced to a value below the holdingcurrent required to sustain regeneration.

The gate voltage and current reqUired to switch a thyristorfrom its high-impedance (OFF) state to its low-impedance(ON) state at maximum rated forward anode current can be

determined from the circuit shown in Fig. 6. Resistor R2 isselected so that the anode current specified in the manufac-turer's ratings flows when the device latches into itslow-impedance or ON state. The value of RI is graduallydecreased until the device under test is switched from itsOFF state to its low-impedance or ON state. The values ofgate current and gate voltage immediately prior to switchingare the values required to trigger the thyristor. For an SCR,there is only one mode of gate firing capable of switching thedevice into the ON state, i.e., a positive gate signal for apositive anode voltage. If the gate polarity is reversed(negative voltage), the reverse current flow is limited by thevalue of R2 and the gate-cathode internal shunt. The value ofpower dissipated for the reverse gate polarity is restricted tothe maximum power-dissipation limit imposed by the ma:l-ufacturer.

Fig.6 - Circuit used to measure thyristor gate voltage andcurrent switching threshold.

Because of its complex structure, a triac can be triggered byeither a positive or a negative gate signal regardless of thevoltage polarity across the main terminals of the device. Fig.7 illustrates the triggering mechanism and current flowwithin a triac. The gate trigger polarity is always referenced

m{+)

Fig.7 - Current flow in a triac.

to main terminal I. The potential difference between the twoterminals is such that gate current flows in the directionindicated by the dotted arrow. The polarity symbol at mainterminal 2 is also referenced to main terminal I. Thesemiconductor materials between the various junctions with-in the pellet are labeled "p" and "n" to indicate the type ofmajority-carrier concentrations within the material.

For the various operating modes, the polarity of the volrageon main terminal 2 with respect to main terminal I is givenby the quadrant in which the triac operates (either I or III),and :he polarity of the gate signal used to trigger the device isgiven by the proper symbol next to the operating quadrant.For the 1(+) operating mode, main terminal 2 and the gateare both positive with respect to main terminal I. Initial gateCUi"fent flows into the gate terminal, through the p-typelayer, across the junction into the n-type layer, and out mainterminal I, as shown by the dotted arrow. As gate currentflows, current multiplication occurs and the regenerativeaction within the pellet switches the triac to its ON state.Because of the polarities indicated between the mainterminals, the principal current flows through the p-n-p-nstructure as shown by the solid arrow. Similarly, for theother three operating modes, the initial gate-current flow isshown by the dotted arrow, and principal-current flowthrough the main terminals is shown by t;le solid arrow.

Because the direction of principal current influences the gatetrigger current, the magnitude of the current reqUired totrigger the triac differs for each mode. The operating modesin which the principal current is in the same direction as thegate current require less gate trigger current; modes in whichthe principal current is in opposition to the gate currentrequire more gate trigger current.

Because triacs are bidirectional, they can provide full-cycle(360-degree) control of ac power from either a positive or anegative gate-drive signal. This feature is an advantage whenit is necessary to control ac power from low-level logicsystems such as integrated-circuit logic. With gate-powerrequirements for turn-on in the milliwatt region, triacs arecapable of controlling power levels up to 10 kilowatts. Thus,the power gain associated with these thyristors far exceedsthat of transistor counterparts in the semiconductor switch-ing field.

Like many other semiconductor-device parameters, the mag-nitude of gate trigger current and voltage varies with thejunction temperature. As thermal excitation of carrierswithin the semiconductor material increases, the increase inleakage current makes it easier for the device to be triggeredby a gate signal. Therefore, the gate becomes more sensitivein all operating modes as the junction temperature increases.Conversely, if a triac or SCR is to be operated at lowtemperatures, sufficient gate trigger current must be providedto assure triggering of all devices at the lowest operatingtemperature expected in any particular application. Varia-tions of gate-trigger requirements are given in the publisheddata for individual thyristors.

The gate current specified in published data for thyristors isthe dc gate trigger current required to switch an SCR or triacinto its low-impedance state. For practical purposes, this dcvalue can be considered equivalent to a pulse current that hasa minimum pulse width of 50 microseconds. For gate-currentpulse widths smaller than 50 microseconds, the pulse-currentcurves associated with a particular device should be used toassure turn-on.

When pulse triggering of a thyristor is required, it is alwaysadvantageous to provide a gate-current pulse that has amagnitude exceeding the dc value required to trigger thedevice. The use of large trigger currents reduces variations inturn-on time, increases di/dt capability, minimizes the effectof temperature variation on triggering characteristics, andmakes possible very short switching times. When a thyristoris initially triggered illto conduction, the current is confinedto a small area which is usually the more sensitive part of thecathode. If the anode current magnitude is great, thelocalized instantaneous power dissipation may result inirreversible damage unless the rate of rise of principal currentis restricted to tolerable levels to allow time for currentspreading over a larger area. When a much larger gate signal isapplied, a greater part of the cathode is turned on initially; asa result, turn-on time is reduced, and the thyristor cansupport a much larger peak anode inrush current.

Switching Characteristics

Ratings of thyristors are based upon the amount of heatgenerated within the device pellet and the ability of thedevice package to transfer the internal heat to the externalcase. For high·performance applications in which switchingof high peak current values but narrow pulse widths isdesired, the internal energy dissipated during the turn-onprocess must be determined to assure that power dissipationis within ratings.

When thyristors (either triacs or SCR's) are triggered by agate signal, the turn-on time consists of two stages, a delaytime td and a rise time tr, as shown in Fig. 8. The totalturn-on time tgt is defined as the time interval between theinitiation of the gate signal and the time for the principalanode c~rrent flow through the thyristor to reach 90 percent of its maximum value for a resistive load. The delaytime td is defined as the time interval between theSO-per-cent point of the leading edge of the gate triggervoltage and the 10-per-cent point of the principal current fora resistive load. The rise time tr is the time interval requiredfor the principal current to rise from 10 to 90 per cent of itsmaximum value. The total turn-on time ton is the sum ofboth delay and rise time (td + tr).

Although the thyristor is affected to some extent by thepeak off-state voltage and the peak on-state current level, theturn-on time is influenced primarily by the magnitude of thegate-trigger pulse current, as shown in Fig. 9. Faster turn-ontime for larger gate drive is a result of a decrease in delay

r:~90'POINT

VFB 1 11 I

o_l_L i_L __I 1 1I 1 1I I I1 1 1

T --1-1I 1 '- 90% POINT

PRINCIPAL I ICURRENT I 1 1

0_.l.J 1-+----~ 'd --i--l- '.I I II---- '" --1

1

"~~-

time associated with the thyristor because of the increasedcurrent density at the gate-cathode periphery. Of majorimportance in the turn-on time interval is the relationshipbetween thyristor voltage and principal current flow throughthe thyristor. During the turn-on interval, the dynamicvoltage drop is high and the current density can producelocalized hot spots in the pellet area. Therefore, it isimportant that power dissipation during turn-on be restrictedto levels within device specifications.

25 50 75 100 125 150 175

DC GATE-TRIGGER CURRENT (IGT)- mA

Fig.9 - Thyristor turn-on time as a function of gate triggercurrent.

Turn-off time of a thyristor can be associated only withSCR's. In triacs, a reverse voltage cannot be used to providecircuit-commutated turn-off voltage because a reverse voltageapplied to one half of the triac structure would be a

forward-bias voltage to the other half. For turn-off times inan SCR, the recovery period consists of two stages, a reverserecovery time and a gate recovery time, as shown in Fig. 10.

Id"'FBdt~'

I

---t-o

- - - - - - - - - - - --- 0

I

I

'1jI' ----II

'ofl ---jI

When the forward current of an SCR is reduced to zero atthe end of a conduction period, application of reverse voltagebetween the anode and cathode terminals causes reversecurrent to flow in the SCR until the time that the reversecurrent passes its peak value to a steady-state level called thereverse recovery time trr. A second recovery period, calledthe gate recovery time, tgr, must then elapse for theforward-blocking junction to establish a depletion region sothat forward-blocking voltage can be reapplied and success-fully blocked by the SCR. The gate recovery time of an SCRis usually much longer than the reverse recovery time. Thetotal time from the instant reverse recovery current begins toflow to the start of the forward- blocking voltage is referredto as circuit-eommutated turn-off time tq.

Turn-off time depends upon a number of circuit parameters,including on-state current prior to turn-off, rate of change ofcurrent during the forward-to-reverse transition, reverse-blocking voltage, rate of change of reapplied forward voltage,gate trigger level, the gate bias, and junction temperature.Junction temperature and on-state current have a moresignificant effect on turn-off than any of the other factors.With turn-off time specified on the manufacturer's data sheetand dependent upon the conditions as outlined above,turn-off time specification is only meaningful if all of theabove critical parameters are available in the actual applica-tion.

For applications in which an SCR is used to control 60-Hz acpower, the entire negative half of the sine wave is a turn-offcondition and more than adequate for complete turn-off. Forapplications in which the SCR is used to control the output

of a full-wave rectifier bridge, however, there is no reversevoltage available for turn-off, and complete turn-off can beaccomplished only if the bridge output is reduced to zerovolts or the principal current is reduced to a value lower thanthe device holding current.

Because turn-off times are not associated with triacs due tothe physical structure of the device, a new term is introducedcalled "critical rate of rise of commutation voltage", or theability of a triac to commutate a fixed value of current underspecified conditions. The rating can be explained by con-sideration of two SCR's in an inverse parallel mode, as shownin Fig. II. SCR-I is assumed to be in the conducting state

Fig. 11 - Circuit used to demonstrate critical rate of rise ofcommutation voltage.

with forward current established. As the principal cur.entflow crosses the zero reference point, a small reverse currentflows in SCR-I until the time that the SCR reverts to theOFF state. The principal current is then diverted to SCR-2,provided that sufficient gate current is available to thatdevice.

The structure of a triac shown in Fig. 12 indicates that themain blocking junctions are common to both halves of the

device. When the first half of the triac structure (SCR-I) is inthe conducting state, a quantity of charge accumulates in then-type region as a result of the principal current flow. As theprincipal current crosses the zero reference point, a small

reverse current is established as a result of the chargeremaining in the IHype region. Because the n-type region iscommon to both halves of the devices, this reverse recoverycurrent becomes a forward current to the second half of thetriac. The current resulting from stored charge may cause thesecond half of the triac to go into the conducting state in theabsence of a gate signal. Once current conduction has beenestablished by application of a gate signal, therefore, com-plete loss in power control can occur as a result ofinteraction within the n-type base region of the triac unlesssufficient time elapses to assure turn-off. It is imperative thattriac manufacturers provide sufficient information regardingcommutating capabiiity under maximum current andcase-temperature conditions so that triac control of ac powerfor resistive loading in a 60-Hz power source can be assured.

Commutation of triacs is more severe with inductive loadsthan with resistive load~ because of the phase lag betweenvoltage and current associated with inductive loads. Fig. 13shows the waveforms for an inductive load with lagging

current power factor. At the time the current reaches zerocrossover (point A), the half of the triac in conduction kginsto commutate when the principal current falls below theholding current required to sustain regeneration. Because thehigh-voltage junction is common to both halves of the triac,the stored charge can be neutralized c.nly by recombination.At the instant the conducting half of the triac turns off, anapplied voltage opposite to the current polari:y is appliedacross the triac terminals (point B)_ Because this voltage is aforward bias to the second half of the triac, the suddenreapplied voltage in conjunction with the remaining storedcharge in the high-voltage junction reduces the over-all device

capability to support a fast rate of rise of applied voltage.The result is a loss of power control to the load, and thedevice remains in the conducting state in absence of a gatesignal. Therefore, it is imperative that some means beprovided to restrict the rate of rise of reapplied voltage to avalue which will permit triac turn-off under the conditions ofinductive load.

An accepted method for keeping the com mutating dv/dtwithin tolerable levels during triac turn-off is to use an RCsnubber network in parallel with the main terminals of thetriac. Because the rate of rise of applied voltage at the triacterminal is a function of the load impedance and the RCsnubber network, the circuit can be evaluated under worst-case conditions of operating case temperature, maximumprincipal current, and any value of conjunction angle. Thevalues of resistance and capacitance in the snubber are thenadjusted so that the rate of rise of commutating dv/dt stressis within the specified minimum limit under any of theconditions mentioned above. The value of snubber resistanceshould be high enough to limit the snubber capacitancedischarge currents during turn-on and dampen the LCoscillation during commutation (turn-off). Any combinationof snubber resistance and capacitance that provides therequirements outlined above is considered satisfactory.

Some of the factors affecting commutating dv/dt capabilityof triacs are temperature, current magnitude, rate of changeof curren t during commutation, and frequency of the appliedprincipal current. With frequency directly related to commu-tating di/dt, early triac use was restricted to 60-Hz applica-tions. Continued technological advances in triac device struc-ture has resulted in faster "turn-off' capability and madepossible a new family of triacs having 400-Hz commutatingcapability that is now being offered to circuit designers whomust work with 400-Hz source voltages.

Another important parameter for thyristors is the "criticalrate of rise of off-state voltage". A source voltage can besuddenly applied to an SCR or a triac which is in the OFFstate through either closure of an ac line switch or transientvoltages as a result of an ac line disturbance. If the fast rateof rise of the transient voltage exceeds the device rating, thethyristor may switch from the OFF state to the conductingstate in the absenc· of a gate signal. If the thyristor iscontrolling alternatit voltage, "false" turn-on (non-gated)resulting from a tran mt imposed voltage is limited to nomore than half the applied voltage because turn-off occursduring the zero current crossing. However, if the sourcevoltage suddenly applied to the OFF thyristor is a dc voltage,the device may switch to the ON state and turn-off couldthen be achieved only by circuit interruptions. The switchingfrom the OFF state is caused by the internal capacitance ofthe thyristor. A steep-rising voltage dv/dt impressed acrossthe terminals of a thy! istor causes a capacitance-chargingcurrent to flow through the device. This charging current(i;Cdv/dt) is a function of the rate of rise of applied off-statevoltage. Il' the rate of rise of voltage exceeds a critical value,

the capacitance-charging current exceeds the gate triggercurrent and causes device turn-on. Operation at elevatedjunction temperatures reduces the thyristor ability to sup-port a steep rising voltage dv!dt because less gate current isrequired for turn-on. The effect of temperature on thecritical rate of rise of off-state voltage is shown in Fig. 14.

w

'"..>-~a> 1.250w>-..>-

* ~ 1,000

u.aw ~

a::~ 750

u.'"aw>- 500..'"~..u

250>=

"'u

Vo ~ vORO ••••.GATE OPEN

'""'"

"'-..'------ -....... ---r-- ---

Fig. 14 - Critical rate of rise of off-state voltage as a functionof case temperature.

Voltage transients which occur in electrical systems as a resultof disturbance on the ac line caused by various sources suchas energizing transformers, load switching, solenoid closure,contacto!"s, and the like may generate voltages which areabove the ratings of thyristors and result in spike voltagesexceeding the critical rate of rise of off-state voltagecapability. Thyristors, in general, switch from the OFF stateto the ON state whenever the breakover voltage of thedevice is exceeded, and energy is then transferred to theload. Good practice in the use of thyristors exposed to aheavy transient environment is to provide some form oftransient suppression.

For applications in which low-energy, long-duration tran-sients may be encountered, it is advisable to use thyristorsthat have voltage ratings greater than the highest voltagetransient expected in the system to proVide protectionagainst destructive transients. The use of· voltage clippingcells is also effective. In either case, analysis of the circuitapplication will reveal the extent to which suppressionshould be employed. In an SCR application in which there isa possibility of exceeding the reverse-blocking voltage rating,it is advisable to add a clip cell or to use an SCR with ahigher reverse-blocking voltage rating to minimize powerdissipation in the reverse mode. Because triacs generallyswitch to a low conducting state, if the di!dt buildup of theprincipal current flow after turn-on is within device ratings itis safe to assume that reliable operation will be achievedunder the specified conditions.

The use of an RC snubber is most effective in reducing theeffects of the high-energy short-duration transients more

frequently encountered in thyristor applications. When anRC snubber is added at the thyristor terminals, the rate ofrise of voltage at the terminals is a function of the loadimpedance and the RC values used in the network. In someapplications, "false" (non-gated) turn-on for even a portionof the applied voltage cannot be tolerated, and circuitresponse to voltage transients must be determined. Aneffective means of generating fast-rising transients andobserving the circuit response to such transients is shown inFig. J 5. This circuit makes use of the "splash" effects of amercury-wetted relay to transfer a capacitor charge to theinput terminals of a control circuit. This approach permitsgeneration of a transient of known magnitude whose rate ofrise of voltage can easily be displayed on an oscilloscope. Fora given load condition, the values in the RC snubber networkcan be adjusted so that the transient voltage at the deviceterminals is suppressed to a tolerable level. This approachaffords the circuit designer with meaningful information asto how a control circuit will respond in a heavy transientenvironment. The circuit is capable of generating transient

32V

b~MERCURY RELAY(CP CLAIRE

HGP-101B)

5 II

j ~ 6~~NciNUTTR6~Rc~~tu~~\.

OUTPUTJ; PULSE

~>dt '" 10k V~s

8

voltages in excess of 10 kilovolts per microsecond, whichexceeds industrial generated transients. The response of a100-millihenry solenoid control circuit exposed to a fast-rising transient is shown in Fig. 16.

Use of Diacs For Control Triggering

Basically, thryristors are current-dependent devices, and themagnitude of gate current IGT and voltage VGT required totrigger a thyristor into the on-state varies. The point at whichthyristor triggering occurs depends not only on the requiredgate current and voltage, but also on the trigger sourceimpedance and voltage. Fig. 17 shows a family of curvesrepresenting the gate-circuit load line between the open-circuit source voltage and the short-circuit current fordifferent time intervals. In a circuit which applies time-dependent variable voltage Vac to a load and the gate triggercurrent required to trigger the thyristor is derived from thesame source Vac, devices that have a gate current Igl are

HORIZONTAL" 0 IJLs/em.VERTICAL" 200 V/cm

n I1,1n.'MI....,.

RC SNUBBER R-'20.fl,CoO 21'F

dV/dt10 kV/fls

INPUT PULSE

Fig. 16 - Waveforms showing response of a 100-millihenrysolenoid control circuit to a fast-rising transient.

triggered earlier in the ac cycle than devices that have ahigher gate trigger current Fig. 3. Although the circuit iscapable of providing variable power to the load, it is heavilydependent on the gate current distribution, and results inuncontrolled conduction angles for a given value of gateseries resistance. Furthermore, the circuit does not providethe recommended gate-current overdrive for switching of thefast-rising high-amplitude load currents present in resistiveloading. A more efficient circuit for control of variablepower to a load that eliminates the need for tight gate-current distribution uses a solid-state trigger device, called adiac, which is voltage dependent.

The diac, often referred to as a bidirectional trigger diode, isa two-terminal, three-layer, transistor-like structure that

~11121~

Fig. 17 - Thyristor gate-circuit load line for different timeintervals.

exJtibits a high-impedance blocking state up to a breakovervoltage V(BO), above which the device enters a negative-resistance region. The characteristic curve in Fig. 18 shows

rIBO,' --- -- ~

---- --- IIBO'"

the negative characteristics associated with diacs when theyare exposed to voltages in excess of the breakover voltageV(BO). Because of their bidirectional properties and break-over voltage level, diacs are useful in triac control circuits inwhich variable power is to be supplied to a load. Because oftheir negative characteristic slope, diacs can also be used withcapacitors to provide the fast-rising high-magnitude triggercurrent pulses recommended in thyristor applications whichrequire efficient gate turn-on for the purpose of switchinghigh-level load currents.In normal applications, diacs are used in conjunction withRC phase networks to trigger triacs, as shown in Fig:19. The

RC phase network provides an initial phase-angle displace-ment</!so that conduction angles in excess of 90 degrees canbe realized. As the voltage on the capacitor begins to buildup in a sinusoidal manner, the breakover voltage V(BO) ofthe diac is reached, the triac is turned on, and a portion ofthe ac input voltage ;s provided to the load, as represented bythe angle a. As previously mentioned, the diac offers anegative-resistance region and is capable of providing currentpulses whose magnitude and pulse width are a function ofthe capacitor C and the combined impedance of the diac andthe gate and main terminal ot' the triac. When the voltage onthe capacitor C reaches the breakover voltage V(BO) , thecapacitor does not discharge completely, but is restricted tosome finite level as a result of the diac negative-impedancecharacteristic at high values of pulse current. Fig. 20 showsthe peak pulse current of a diac as a function of thecapacitances of the phasing capacitor C.

IPKn PULSE

~ ~RRENT

~3",--11.0

..•, 0.8•..zw D.•~~"u D.''"..•w

0.20..

Fig.20 - Peak pulse current of a diac as a function of phasingcapacitance.

In the control of ac power by means of semiconductordevices, emphasis has been placed on circuit simplicity, lowcost, and small over-all package size. Thyristors meet thesegoals, and are also capable of providing either fixed oradjustable power to the load. Fixed power is achieved by useof the thyristor as an ON-OFF switch, and adjustable powerthrough the use of an RC phase network which providesvariable phase-gating operation. The following section dis-cusses both SCR and triac circuit operations, and analysis ofSCR and triac behavior for various circuit conditions.

Many fractional-horsepower motors are series-wound"universal" motors capable of operation from either an ac ora dc source. In the early stages of thyristor control, SCR'sfound wide acceptance in the control of universal motors,particularly in the portable power tools market. SCR's arecapable of providing speed control over half of an ac sinewave, and, if full power is required, a simple shorting switchacross the SCR provides the necessary function; such aswitch is shown in Fig. 21. Turn-off parameters for this

circuit are not critical because the SCR has a half-cycle ofapplied negative voltage in which to recover. The SCRprovides a reliable, highly efficient, long-life control forhalf-wave control circuits.

Fig. 22 shows a full-wave bridge that feeds a resistive loadand uses an SCR as the control element for load current.Power control is accomplished by SCR turn-on at variousconduction angles with respect to the applied voltage. Thecriteria for turn-off in this circuit is important because theSCR must recover its forward-blocking state during the timethat the forward current stops flowing. Although this timeinterval may appear to be very small, close analysis of thevoltage wave during the transition time in which thefull-wave bridge reverses direction reveals that substantialtime exists for turn-off.

Fig. 23 shows one-half of the bridge during the time that theforward current is approaching zero current. Two diodes arein series with the SCR; it is generally accepted that a diode

Fig.23 - Half of bridge circuit of Fig. 22 when forwardcurrent approaches zero for a resistive load.

voltage of approximately 0.6 volt is required to maintaineach diode in conduction. If it is further assumed that avoltage of approximately 0.6 volt is required across the SCRto maintain conduction, the sum of the voltage drops overthe circuit requires 1.8 volts; below this value, the SCR dropsout of conduction. As the bridge reverses current direction,the same analysis holds true, i.e., forward conduction currentis not resumed until the sum of the voltage drops exceeds 1.8volts.

The waveform during the interval that the voltage wave goesfrom 1.8 vofts to zero can be analyzed by reference to Fig.24. A half-cycle (180 degrees) of conduction requires 8.3milliseconds, one degree being equal to approximately 46microseconds. Because a sine wave is linear for very smallangles, a graph can be constructed to show the time intervalduring which the voltage is less than 1.8 volts for variousmagnitudes of applied voltage. Analysis of the voltage wavefor an angle of one degree shows that an input voltage of 120volts rms results in a voltage equal to 2.9 volts, which decaysto zero in 46 microseconds. Because the SCR isnon-conducting below a circuit threshold of 1.8 volts, a timeof 28.5 microseconds then elapses while the voltage decaysfrom 1.8 volts to zero. An equal time is required for thebridge to build up to the threshold voltage of 1.8 volts.Therefore, a total exposure time of 57 microseconds elapsesin which the SCR is allowed to regain its forward-blockingstate.

As shown in Fig. 24, increasing the magnitude of the appliedvoltage source to 240 volts rms cuts in half the time intervalwhich the SCR is allowed for turn-off. Further increases ininput voltage magnitude result in shorter turn-off periods.

LlJ 2.9V

~ l.av§?

I I TloE -f" II I ~ 14.2 ---tI f---- 28.5 -------iI. 46#5 , I

Fig.24 - Waveform 0': circuit in Fig. 22 as voltage wave goesfrom 1.8 volts to zero.

This analysis gives a clear, well-defined picture of the turn-offtime available for a resistive load. However, for reactiveloads, such as fractional-horsepower motors, the turn-offconditions, including turn-off time and dv/dt stress, are moredifficult to define because they are affected by a number ofvariables, including the back EMF of the motor, the ratio ofinductance to resistance, the motor loading, and the phaseangle of motor current to source voltage. Normally, turn-off

times for SCR's are industry-standardized to include peakforward current, rate of rise of reverse current, peak forwardblocking voltage applied, and rate of rise of applied blockingvoltage. The presence of the applied reverse current helps toshorten turn-off times because the reverse current sweeps outthe charge in the blocking junction. For SCR operation froma full-wave bridge in which there is no appreciable reversevoltage available, turn-off is accomplished through recombin-ation, and the effects of circuit loading on SCR operationmust be clearly evaluated.

FuJi-wave ac switching can also be performed by use of twoSCR's in an inverse parallel mode, often referred to as a"back-to-back" SCR pair, as shown in Fig. 25. This circuitcan be used as a simple static switch or as a variable phasecontrol circuit. It does not make use of a full-wave diodebridge, but simply uses the SCR's in an alternating mode.The circuit has the disadvantage of separate trigger logic, butpossesses an inherent advantage in higher-frequency applica-tions because advantage can be taken of the periods of thealternating voltage in which either device may recover to itsblocking state. During the half-cycle of the applied voltagethat SCR-I is conducting, SCR-2 is reverse-biased and canrecover its blocking state. Because of the applied reversevoltage and associated time of the half-cycle voltage, turn-offtimes are not critical.

Fig.25 - Full-wave ac switching circuits using a "back-to-back" SCR pair.

This two-SCR circuit is often favored over a triac circuit,even though separate trigger sources are required, because itis supposed to have better commutating capability. Fig. 26shows the waveforms of com mutating dv/dt for the SCRcircuit. If the load is inductive with lagging current powerfactor, the conducting SCR commutates at the time theprincipal current reaches zero crossover (point A) and revertsto the blocking state; a reapplied voltage of opposite polarityequal to the source voltage then appears across the non-conducting SCR. Because this voltage is a forward-biasvoltage to the non-conducting SCR, device turn-on can occurif the rate of rise of applied forward voltage exceeds thedevice rating for critical rate of rise of off-state voltage. Forinductive loading in an inverse-parallel-mode SCR applica-tion, power control to the load can be lost if the rate of riseof applied voltage is exceeded.

'--,,,

Fig.26 - Waveforms of commutating dv/dt for SCR circuit ofFig. 25.

Although it may appear that the rate of rise is extremely fast,closer circuit evaluation reveals that the dv/dt stress isrestricted to some finite value which is a function of the loadreactance L and the device capacitance C. Therefore, it isimportant that the rate of rise of applied voltage duringcommutation not exceed the device specification for criticalrate of rise of off-state voltage under worst-case condition orunreliable operation may result. It is generally good practicein inverse-parallel operation to use an RC snubber networkacross the SCR pair to limit the late of rise to some finitevalue below the minimum requirements, not only to limit thevoltage rise during commutation, but also to suppresstransient voltage that may occur as a result of ac linedisturbances.As previously mentioned, the use of semiconductor devicesfor ac power control has emphasized circuit simplicity, lowcost, and small over-all package size. The development of thebidirectional triode thyristor, referred to as a triac, achievedall of these goals. Triacs can perform the same functions astwo SCR's for full-wave operation, and also simplify gatelogic requirements for triggering.

A simple, inexpensive triac circuit that can provide variablepower to a load over a full cycle' of applied voltage is thelight-dimmer circuit. This circuit contains a diac, a triac, andan RC phase-control network. The basic light·dimmer circuitis described below because it provides a good example oftriac behavior as related to load reqUirements and of theoperation of a diac in an RC phase-control circuit.

Fig. 27 shows the basic triac-diac light-dimmer control circuitwith the triac connected in series with the load. During thebeginning of each half-cycle, the triac is in the off-state andthe entire line voltage is across the triac; therefore, novoltage appears across the load. (Actually, there is somevoltage across the load as a result of triac leakage currents,which are a function of applied voltage and junction tempera-ture. However, these leakage currents are relatively small, atmost in the milliampere range, and the resulting load voltagesare generally ignored.)

The RC charge-control circuit is in parallel with the controltriac, and the applied voltage serves to charge the timingcapacitor C through the variable resistor R. When the voltageacross C reaches the breakover voltage V(RO) of the diac, thecapacitor discharges through the diac and the gate-to-main-terminal-I impedance of the triac and turns on the controltriac. At this point, the line voltage is transferred to the loadfor the remainder of the applied half-cycle voltage. As theload current reverses direction (zero crossing), the triac turnsoff and reverts to the blocking state. This sequence of eventsis repeated for every following half-cycle of applied voltage.

If the value of resistance R is decreased, the capacitor chargesto the breakover voltage V(RO) of the diac earlier in the accycle; the power supplied to the load is then increased andthe lamp intensity is effectively increased. If the value ofresistance R is increased, triac triggering occurs later in the accycle and applied voltage to the load is reduced; the result isuecreased lamp intensity. Therefore, changes in the resistancevalue R effectively apply variable power to a load (which is alamp load in the circuit of Fig. 27, but could also be a motorload or heating element).

Although the load is arbitrarily placed in series with mainterminal 2, the circuit performs equally as well if the load isshifted to main terminal I. (Actually, any commercial lampdimmer available has two wires brought out for externalconnection, and the chance that the load will be connectedto main terminal I is 50 per cent.) The only requirements forreliable operation are that the RC phase network be inparallel with the triac and that capacitor-discharge loopcurrents be directed from the diac to the triac gate and mainterminal I. Although the basic light-control circuit operates

with the component arrangement shown in Fig. 27, addi-tional components are often added to reduce hysteresiseffects, extend the effective range of power control, andsuppress radio-frequency interference.

Hysteresis in triac phase.control circuits is referred to as theratio of applied load voltage when the triac initially turns on(as control potentiometer is slowly reduced from some highvalue) to the value of load voltage prior to "extinguishing"(as the control potentiometer is slowly increased to somehigher value). If the circuit has high hysteresis, the controlpotentiometer travel may be as high as 25 per cent beforetriac turn-on occurs, after which the control potentiometermay be turned back 15 per cent before the triac "ex-tinguishes". Hysteresis is an undesirable feature if the circuitapplication requires low-level lamp illumination because amomemtary drop in line voltage may result in the triac"extinguishing" or missing one half-cycle of applied voltagewhen the capacitor voltage is barely equal to the breakovervoltage V(BO) of the diac. If this condition exists, thecontrol potentiometer must be reduced to "start up" thetriac again.

Hysteresis is a result of the capacitor discharging through thediac and not recovering the original voltage prior totriggering. Fig. 28 shows the waveforms of the charging

' 2na [THEORET1CAL)GATE TRIGGER

POINT

Fig.28 - Charging cycle of capacitor-diac network in Fig. 27(high hysteresis).

capacitor C as related to the applied line voltage_ The initialdisplacement angle ¢ is a result of the phase angle due to thevalue of the RC components used. As the value of thecontrol potentiometer is slowly reduced, the value ofcharging voltage reaches the breakover voltage V(BO) of thediac, and the triac allows that portion of the ac waveremaining to appear at the load, as represented by the shadedarea at the first trigger point. At this point, there is an abruptchange in capacitor voltage (A V):Therefore, as the capacitorcharge reverses direction, the second trigger point is reachedmuch earlier in the next half-cycle, and that portion of the acwave remaining appears across the load, as represented by theshaded area at the second trigger point. The second triggerpoint and subsequent trigger points represent the steady·statelevel at which triggering occurs. Some reduction in hysteresiscan be realized by inserting a resistor in series with the diac

to reduce the effective diac negative resistance and minimizethe change in capacitor voltage. However, this change reducesthe gate current pulse and, if not carefully controlled, mayresult in di/dt failures because the triac switches high-magnitude current under minimum gate drive.

A more effective method of reducing hysteresis is to use asecond RC time constant, or a "double-time-constant"circuit such as that shown in Fig. 29. As C2 supplies the

charging voltage for the diac breakover voltage V(BO), theabrupt change is capacitor voltage during diac turn-on ispartially restored by capacitor CJ , as shown in Fig. 30. Therestoring of the charge on C2 maintains the original triggeringpoint very closely and results in extended range of thecontrol setting. This triac circuit can be turned on for verylow levels of applied voltage and is not prone to "extinguish-ing" for line-voltage drops.

~" 2,.(THEORE TICAL)

GATE TRIGGERPOINT

Fig.30 - Charging cycle of capacitor-diac network in Fig. 29(reduced hysteresis).

Because triac switching from the high-impedance to thelow-impedance state can occur in less than one microsecond,the current applied to the load increases from essentially zeroto a magnitude limited by the load impedance within thetriac switching time. This rapid rise of load current producesradio-frequency interference (RF!) extending into the rangeof several megahertz. Although this rapid rise does not affecttelevision and FM radio frequencies, it does affect theshort-wave and AM radio bands. The level of RFl generatedis well below that caused by small ac/dc brush-type motors,but some means of RFI suppression is generally required if

the triac phase·control circuit is to be used for any extendedperiod of time in an environment in which RFI generationcannot be tolerated.

A reasonably effective suppression technique is shown in Fig.31. An inductor is connected in series with the triac controlcircuit to restrict the current rate of rise, and a filtercapacitor is used in parallel with the entire network to bypasshigh·frequency signals.

lJ+ e!GHT

J' ~.I~F"""'" CONTROL.~ RCUtT I

100 1.LH

. ~

The values shown in Fig. 31 are effective in reducing RFInoise for rms load currents up to 6 amperes to such an extentthat the effects on short·wave and AM signals are eitherminimized or considered tolerable. For values above 6amperes rms, additional suppression can be achieved by useof dual chokes in the ac lines to the triac network.Depending on the circuit performance required, suchsuppression mayor may not be effective and other means oftriac control may be required.

An alternate method of providing high·current heatingcontrols is through use of a proportional control circuit usingintegral·cycle synchronous switching or zero·voltage switch·ing. This approach varies the average power 10 the loadthrough controlled bursts of full cycles of ac voltage to the

load by turning on the triac at the beginning of thezero-voltage crossing. Because the triac turns on near zerocurrent, the sudden current steps associated with phase·control circuits and the RFI generated are minimized. TheRCA·CA3059 zero·voltage switch is a monolithic integratedcircuit used primarily as a trigger·current generator for con·trol of thyristor turn·on during the zero·voltage transition.This circuit has many features, one of which is a fail-safecircuit which inhibits output pulses in the event that theexternal sensor is opened or shorted.

ConclusionsThis Note has reviewed thyristors from the viewpoints oftemperature and voltage conditions, gate trigger character·istics, and effects of SCR's and triacs on circuit performance.TIle availability of power thyristors gives design engineersgreater freedom in achieving circuit simplicity, low cost, andsmall package assembly than electromechanical or tubecounterparts. Technological improvements are far fromreaching the saturation level, but are opening new doors forcircuit application. The impact of thyristor applications isbeing felt in normal everyday environments such asresidential lamp dimming, TV deflection systems, homeappliances, marine ignition, automotive applications, electricheating, comfort controls, and igniters for fuel·fired furnaces.Industrial applications for multiple·horsepower motors, lampdisplay boards, inverters, relay protection or replacement,radar, sonar, and emergency standby generating systems arenow finding widespread acceptance in thyristor controls. Theintroduction of RCA triacs fully characterized for 400·Hzcommulating capability opens the doors to many aircraftsupport applications which preViously were devoid of theadvantages offered in solid·state design. It appears that theanswer to most power·control applications may be thethyristor.

OOa3LJ1]Solid StateDivision


AN-4537

Thyristor Control of IncandescentTraffic-Signal Lamps

This Note discusses the use of thyristors in the control oftraffic signals. The thyristor most applicable to thisapplication is the triac, which can carry the electrical powerrequired for incandescent traffic-light bulbs, yet can be gatedby the low-power signals from electronic control timers ormonitoring computers. In addition, the triac is able to handlethe large transient currents that result from cold ftIamentturn-on (inrush) and ftIament rupture (flashover). Triacoperation, stresses on triacs in operation with incandescentlamps, and a number of triac circuits for control ofincandescent lamps in traffic signal applications are discussedbelow.

TRIAC OPERATIONA triac, shown schematically in Fig. I(a), is a bidirec-

tional triode thyristor. In the absence of a gate signal, thetriac blocks both portions of an ac sine wave, but asteady-state or pulsed gate signal will switch it on as in Fig.I(b). The gate signal can be either positive or negative withrespect to main terminal no. I (MTl), while MT2 can also beeither positive or negative referenced to MTl; the four pos-sible modes of switching are depicted in Table I. For example,when a triac is triggered by connecting a resistor betweenMT2 and the gate, as shown in Fig. 2, the triac operates inthe 1+ and III- modes in energizing the ac load. Otherthyristor characteristics will be introduced below as needed,while an extensive review of thyristors is available in RCAApplication Note AN-4242, "A Review of Thyristor Char-acteristics and Applications".

SURGE CURRENT THROUGH TRIACS ININCANDESCENT-BULB OPERATION

The traffic-control circuit designer must be aware of twocharacteristics of incandescent bulbs: end-of-life fIlamentrupture and cold-filament inrush surge. Both these transientconditions impose a high surge stress on the controlling triac,which without proper circuit design can be destructive.

FlashoverFlashover is a short-duration, extremely high-current

surge through the triac that is initiated when a lamp filament

t;0HSTATE

HOLDINGCURRENT

------,._-

-H::::;--CURRENT

ON STATE

QUADRANTmMAIN TERMINAL 2 NEGATIVE

Fig. 1- (a) Schematic svmbol. and (b) principal voltage-current characteristic for a triac.

MODE MT2 G

1+ + +1- +

111+ +111-

ruptures. The rupture is most likely to occur as a result of atermination in bulb life; however it can be caused by amechanical shock. The mechanism of flashover is initiated by

the gap formed when rupturing occurs. The instantaneousvalue of line voltage across the break sets up an electric fieldthat ionizes the gases in close proximity to the gap. Theionized gases, usually argon and nitrogen, provide anelectrical conduction path across the gap, and the resultingcurrent heats and ionizes more gases until an arc is formedacross the filament lead-in wires. The arc is maintained aslong as the regenerative heating and ionization continue.Finally, because of either increasing arc length or decreasingac line voltage, or both, the electric field becomes too weakto sustain the a,'c, and the arc is extinguished.

Fig. 3 shows a flashover current pulse. Its magnitude andduration depend on many factors. The actual peak magni-tude of the source voltage, the voltage phase at the instant offilament rupture, and the impedance of the lead wires andother circuitry (including RFI filters) all affect the durationand magnitude of the surge. Typical values can be given forthe stress of flashover at a load center point. For bulbs of lessthan 75 watts the duration of the surge can be typically lessthan 2 milliseconds. For bulbs of 100 to 150 watts the dura-tion of the surge can be typically less than 4 milliseconds. Themagnitude of surge can vary considerably, with typical peakvalues ranging from 80 to 200 am peres when the flashoveroccurs near the maximum voltage point. If the flashoveroccurs at a zero-voltage crossing, the current surge may bereduced as a result of the dependence of the magnitude on thevoltage phase at rupture.

Because of the short duration of the flashover current, itis usually difficult to provide circuit fuse protection againstflashover. Most incandescent bulbs are provided with a fusebuilt into one of the lead-in wires. This built-in fuse is not100-per-cent effective against flashover and therefore cannot

be depended upon to protect the triac. Fusing of triaccircuits is described in more detail in the following discussionof inrush current.

InrushIn tungsten-filament lamps, the cold filament resistance is

approximately 1/18 to 1/12 of the hot mament resistance.The actual currents in a circuit under inrush and steady-stateconditions do not vary in these ratios, however, because ofthe inductance and external limiting resistance of thecircuitry, including the lead-in wires to the bulb. Further-more, it is obvious that the highest inrush current will occurat the peak of the voltage sine wave in a lamp load circuit. Ifswitching occurs at any other phase of the voltage sine wave,the peak current through the bulb is less than "worst case".Typically, the maximum inrush peak current can be ten timesas great as the steady-state peak current, while the peak inrushcurrent with zero-voltage switching can be approximately fivetimes as great as the steady-state peak current, as shown inFig. 4. Thus zero-voltage switching of a lamp effects a softturn-on that reduces the initial peak of inrush current by halfand greatly increases bulb life. This increase of bulb life byzero-voltage switching has been verified by test results; anincrease in life of approximately ten times, with a 90 per centconfidence level, has been reported. Thus maintenance costsare reduced and system reliability increased.

Fig. 4 shows how the current in a lamp circuit decreasesto the steady-state value. The rate of decrease depends uponthe thermal time constant of the tunsten filament. A

~:,"'2T03TlMES ~Ipk STEADY STATE

...•..100 ms

L/2 TO :3 TIMESIpk STEADY STATE

.....••100 ms

Fig. 4- (a) Inrush current at peak voltage point, and(b) inrush current at zero-voltage point.

AN,4-537. .__ ... .. __. ... _•.._.•_... ~_._a bulb is exposed to its most severe normal operating stressduring inrush, the weakest spot of the fIlament oftenruptures and causes a flashover at turn-on. Most often,switching and flashover occur at some point other than thepeak voltage; therefore the resulting peak current is usuallywithin the handling capability of the triac.

Fuses in incandescent-lamp circuits must not blow underthe stress of inrush current, yet must blow under flashovercurrent. For low·power bulbs the flashover current issubstantially greater than the peak inrush current, and fuseprotection is simple. For example, a 100-watt bulb mighthave a typical flashover current of 100 to 200 amperes and atypical inrush current of 10 amperes. For large-wattagebulbs, however, fusing is difficult. For a 1000-watt bulb, thepeak flashover current might still be between 100 and 200amperes, while the peak inrush current is approximately 120amperes. Fuses set to blow at 150 amperes peak flashovercurrent of short duration may also blow under thelong-duration, slightly-lower-amplitude stress of inrush. As aresult, a fusing solution to the problem of triac protectionwould be marginally reliable. One solution is to use a40-ampere triac (available in the RCA-2N5443 series), whichhas a single-cycle surge capability of 300 amperes, to controlthis 10-ampere load. Here again system reliability would beimproved and maintenance costs reduced.

CIRCUITSWith the closely·related transient stresses imposed on a

triac by an incandescent-Iight·bulb circuit having been noted,a number of circuits that help to reduce these stresses on thetriac and increase lifetime of the bulb are discussed below.

Zero-Voltage Switching with an ICAn RCA-CA3059 integrated circuit (IC) can be used with

a triac to accomplish zero-voltage switching of a load. Afunctional block diagram of this IC is shown in Fig. 5. TheCA3059 is a monolithic, multistage, integrated circuit thatincorporates a diode limiter, a threshold detector, adifferential amplifier, a Darlington output driver, and otherfeatures. A more extensive description of this IC is given inRCA Application Note ICAN-6l82, "Features and Applica-tions of RCA Integrated-Circuit Zero·Voltage Switches." TheCA3059-and-triac circuit for zero-voltage switching is shownin Fig. 6. When QI is off, the IC does not generate pulses tothe gate of the triac. When QI is biased on, the IC generatesgating pulses of approximately 40 milliamperes for 100microseconds that straddle the zero-voltage crossing points.These pulses trigger the triac on in the 1+ and III+ modes atthe zero-voltage crossing for the resistive-tungsten-mamentbulb and effect the desired result of decreasing inrushcurrent.

Fig.5- Functional block diagram of the RCA-CA3059integrated-circuit zero· voltage switch.

The circuit shown in Fig. 6 has one disadvantage fortraffic controls, in which the bulb load is usually groundedand the power circuit ground and the logic ground arecommon. This arrangement presents a severe problem ofint~rfacing between logic and power circuitry. If the load inFig. 6 were grounded, terminal No.4 of the CA3059 wouldbe at line voltage above ground and the substrate (terminalNo.7) at ground potential when the bulb was energized. As aresult, the IC would be destroyed. Similar problems areencountered whenever the logic circuitry is directly coupledwith the triac power circuit and the load is grounded.However, this problem is eliminated in the discrete-component circuits described below.

Discrete-Component Zero-Voltage SwitchingA discrete·-eomponent circuit that accomplishes zero-

voltage switching of a grounded tungsten mament load is

120 VAC60Hz

jCircuit that uses the CA3059 and a triac to switcha lamp at zero voltage.

shown in Fig. 7. With Q lon, T1 is on and source voltage isshunted away from the load. With QI biased off, T1 is offand T2 is gated on through RI and RJ. When T2 conducts, itconnects R4 from gate to MT2 of T3, and thus triggers T3 onin the 1+and III- modes. Because T2 is a sensitive-gate device,it turns on close to the zero-voltage point; therefore, the loadis also zero-voltage switched after the initial turn·on. For atypical T2300B device, triggering in the 1+ and Ill· modesresults in firing at about 7 volts peak on the line. After T3 isturned on, the triggering circuitry is shorted; therefore, notriggering power is dissipated while the lamp is on.

Filament Pre-HeatingAnother approach to reducing the inrush current is

shown in Fig. 8, where a fllament pre-heater function isincluded in the switching arrangement. In this circuit, whenQI is off the logic interfacing triac T1 is off. R3, which canbe a fixed resistor of approximately 98 kilohms, is set so thatT2 is fired for only a small portion of the voltage cycle. This

Fig. 7- Discrete-component circuit used to switch agrounded load at zero voltage.

C20.068 jJ.F

+5V

r 7,• 2N5755

Fig. 8- A circuit including a filament pre-heat arrange-ment.

firing is accomplished by the standard double-time-constantlamp-dimmer gate circuitry of T2. The low-conduction-ohasefiring of the bulb keeps the tungsten fllament warm but nothot enough to radiate any readily visible light. When QI isturned on, T1 is gated on and R3 is shorted, and the lampload turns on.

The associated waveforms are shown in Fig. 9. For a200-watt bulb in the circuit of Fig. 8, the first peak ofcurrent through the bulb was 7.5 amperes when the warm upcircuit was used and 25 amperes with cold-fllament inrush.

These circuits of Figs. 7 and 8 show that triacs can beused to switch power lamp loads and also interface withlow-level logic systems. They also show how some of thestresses involved with the switching of incandescent lampscan be reduced. Other switching circuitry for use in trafficcontrols is discussed below.

OTHER APPLICABLE ON.QFF SWITCHINGCIRCUITS

Two other circuits that can be used in the traffic controlarea are shown in Figs. 10 and 12. These circuits have theadvantages of a common ground between logic and powercircuitry, grounded bulbs, and isolation between the dc logicand the power circuitry afforded by use of the interfacinglogic triacs.

In the positive-logic switching circuit of Fig. 10, logictriac T I is used to interface between the low level logic andthe load triac T2. With T1 gated on, CI is charged throughRI to the breakover voltage of the diac, at which point T2and the load are triggered on. The various circuit waveformsare shown in Fig. II. As Fig. II(d) shows, there iscontinuous gate power driving T2 wheneve: T I is on andthus the light is on hard.

A variation of this circuit with opposite (negative) logic isshown in Fig. 12. In this circuit, when T1 is triggered on, T2and the lamp are off. When T1 is off, CI can charge throughRI and R2 to diac breakover, which discharges CI into thegate of T2 and energizes the load. The waveforms of thiscircuit are shown in Fig. 13. Little gate power is dissipated inthis circuit because T2 shorts across its gate circuitry when itis on.

t\-11--.e"'9°

Fig. 9- Waveforms for circuit in Fig. 8: (a) voltage on bulbwhen 01 is off; (b) voltage on bulb when 01 is on.

L

Ig, O~---~ T'ME(0)

'n ,IVT201C\'20V ~

V (e)

VLol~_C\'20v C(d) CJ

i

-32V-M rVCO~_32V_c=J

(.)

Both of these circuits are shown with continuous gatedrive into triac TI. Logic power could be conserved by use ofpulse drive, with no change of power stage operation;however, the logic circuitry would be more complex.

THYRISTOR FLASHERThyristors can also be used to advantage in flasher-type

traffic-control systems. In these applications, two lights areusually flashed on and off as a warning display. Fig. 14 showsa thyristor circuit that accomplishes this flashing function.As shown, a silicon-controlled-rectifier (SCR) multivibratorfunctions as the timer and flasher-triggering driver. The drive

f~120 v AC

Igt=25 mA

VT,

'" 'I TIME(01

" °1C\ 1\

TIME

(b)V~~IC\ LJ TIMEV (0)

" ,I C\ 1'\TI~~;J

·,,1 I~

~~

TIME

(.)

Fig. 13- Waveforms for negative-logic switching.

to the control triac is de and is alternated between Tl and T2according to the timing set in the multivibrator. A waveformfor the component values shown is displayed in Fig. 15. Thetiming can be modified by selecting different values for anyof the following components: RI, R2, R3, R4, CI, C2. Theimportant features of this circuit are the simple, rugged depower supply used and the use of SCR's as both timing andmemory devices to trigger the triacs. Alternative approachesto the traffic control flasher are given in ICAN-6l82, "Featuresand Applications of RCA Integrated-Circuit Zero-VoltageSwitches_"

1100

lo} 120VAC

j ~" R~CIRCUIT RELAY~ 8b

Bb:::::8czO.30 SEC.

AC - DC ISOLATIONIn the circuits shown thus far, either a triac or an IC is

used to interface between the dc logic and the ac powercircuitry. A number of other methods can be used to isolatethese stages in a traffic controller. The circuit of Fig. 16illustrates the use of a reed-type relay. When the relay isactivated, the triac is gated in its 1+and III- modes and littlepower is dissipated in the gate circuit. Fig. 17 shows the useof a light source and photocell combination. Because thephotocell is part of a single-time-constant circuit, it musthave enough dark resistance to keep the voltage across CIbelow 32 volts so that the diac does not switch and dischargethe capacitor into the gate of the triac at all times. A pulsetransformer can also be used for isolation, as shown in Fig. 18.A 5-kHz signal into the gate turns the triac on at initiation ofthe pulsing and keeps it on until the oscillator is stopped.

a I I· _ _ ~ TIME_~_\:~_.LL-

Fig. 16- (a) Circuit, and (b) waveforms of reed-relay gatecontrol.

RFI SUPPRESSIONRadio-frequency interference (RFI) that can result from

the fast triac SWitching of high power loads must beconsidered in traffic control circuits. When an ac load isswitched on, as shown in Fig. 19, RFI is generated in theinitial wavefront. This steep wavefront contains manyharmonics that can be sustained by the circuit Q.

One method of reducing RFI is zero-voltage switchingwith resistive loads; thus, the circuits above that utilize theRCA-CA3059 IC inherently include RFI suppression. Cir-cuits that do not use zero-voltage switching require externalfilters for RFI suppression. A typical filter used inconjunction with ac loads is portrayed in Fig. 20. The effect

~O~~_~ __ "TIME

120VAC

1LOGIC

CIRCUIT

r:c"120 V AC

I

RFI FILTERr-----jI I

I IOO/l-H II II II OI~F IL --I

ffilCTI3LJDSolid StateDivision


AN-4745

Analysis and Design of SnubberNetworks for dv/dt Suppressionin Thyristor Circuits

When a triac is used to control an inductive load, voltageswith high rates of change (dv/dt) can be generated that cancause a non-gated turn-on of the triac. This false turn-on canoccur if the dv/dt exceeds the critical rate of rise of commuta-tion voltage of the triac, or if voltage ringing occurs thatexceeds the blocking capability of the triac (VOROM)' Thefalse triggering caused by these mechanisms resul ts in a lossof control of power to the load; to assure reliable operation,therefore, it is necessary to provide means to suppress thisdv/dt stress as it is commonly called. The simplest method ofdv/dt suppression is the use of a series RC network across themain terminals of the triac. The design of this network,commonly called a snubber network, must take into accountthe peak voltage that can be allowed in the circuit, and themaximum dv/dt stress that the device can withstand. ThisNote analyzes the RC network design and presents graphsthat allow a designer to select a snubber to fulfill hisrequirements.

Commutating dv/dt And False Turn-OnFig. I shows a control triac in a typical connection with

an ac power source and a load. The triac is a regenerativedevice; once it has been turned on, it continues to conductuntil the principal current drops below a value that justsupports the regeneration. This current level is called theholding current of the device. If the gate signal is removedbefore the principal current decreases below the holdingcurrent, the device turns off and regains its blockingcapability.

Fig. 1- Series connection of a triac, an inductive load, andan ac power source.

Fig. 2 shows the triac principal voltage and currentwaveforms when the load is resistive. If the gate signal isremoved at time to' the device continues to conduct until thecurrent attempts to reverse polarity. The device thenundergoes a reverse recovery period, and thereafter mustsupport a main terminal voltage of the reverse polarity that isequal to the source voltage. The rate of reapplication of thisoff-state voltage for a resistive load and a l20-volt 60-Hzsource is typically 0.064 volt per microsecond if the strayinductance due to wiring is minimal. This rate of reappli-cation generally does not cause turn-on of the device.

TRIACPRINCIPALCURRENT

TRIACPRINCIPAL

VOLTAGE

Fig. 2- Principal voltage and current for a triac in operationwith a resistive load.

In a circuit with an inductive load the voltage leads thecurrent by some phase angle <P as shown in Fig. 3. After thetriac turns off it must block the reapplied instantaneous linevoltage of the reverse polarity. Because the triac goes fromthe conducting state to the blocking state in a very shorttime, this voltage is reapplied very rapidly. The turn-off ofthe triac causes a rapid decay of current through theinductance, and thus produces an Ldi/dt voltage. This rapidly

SOURCEVOLTAGE/

I

TRIACPRINCIPAL

CURRENT

,-

TRIACPRINCIPALVOLTAGE

Fig. 3- Principal voltage and current for a triac in operationwith an inductive load.

rising off-state voltage stress is impressed across the mainterminals of the device and can cause it to turn on. Fig. 4illustrates this false turn-on.

A triac analog that uses two silicon controlled rectifiers(SCR's) provides a simple understanding of how this dv/dtcauses the device to turn on. The inverse parallel SCR analogof the triac is ,~own in Fig. 5(a), and a two·transistor analogof the SCR is shown in Fig. 5(b). At the end of the half cycleof on-state current conduction, some charge remains in thebases of the equivalent transistors that comprise the conduct-ing SCR. Upon application of the opposite-quadrant off-statevoltage, this charge flows as a recovery current. Part of thiscurrent flows through the equivalent transistor emitter of theadjacent SCR. In addition, some charge may already exist inthe bases of the blocking SCR because of lateral transport ofcarriers from the previously conducting side. Finally, acapacitive displacement current flows to the reverse-biasedmiddle junction of the blocking SCR; this displacementcurrent, lOIS, can be described by the following equation:

dV dCMIDIS = CM dt + Vctt

where CM is the capacitance of the reverse·biased junctionand V is the voltage across that junction.

If the total of the three currents is sufficient to cause thesum of the transistor gains to become unity, the deviceswitches on. The use of the shorted-emitter construction byRCA shunts some of the current away and thus permits ahigher dv/dt stress to be placed across the device, but doesnot eliminate the current completely. The first two currentflows are functions of device design and construction, butthe displacement current flow can be controlled by use of anRC snubber network that limits the rate of reapplication ofoff-state voltage.

The snubber network, illustrated in Fig. 6, consists of aresistance RS and a capacitance Cs placed in series across themain terminals of the device. For some snubber componentvalues and some types of load, excessive ringing can occur inthe circuit; this voltage ringing can exceed the blocking

capability (VOROM) of the device. Malfunction of the deviceis then caused by the inability of the triac to block thevoltage even though it can withstand the dv/dt stress. Anexample of voltage ringing is shown in Fig. 7(a). Fig. 7(b)shows the same voltage on an expanded time scale.

TRIACPRINCIPALCURRENT

Fig. 4- Principal voltage and current curves showing triacmalfunction that results from commutating dv/dtproduced bV inductive load.

kCATHODE

Fig. 5- (al Two·SCR representation of a triac; (bl two·transistor model of an SCR, with junction capa-citance shown.

Fig.6- Triac circuit using a snubber network of RS and Csconnected across the triac.

T250 v

1--1 1-20/",

(o)

...L50V

T dv V2 - VI

dt·~

Fig. 7- (a) Ringing, caused by inductive load, in theprincipal voltage of triac; (b) principal voltageshown on an expanded scale.

Basic Circuit AnalysisThe suppression network must be designed to limit the

dv!dt stress and to have an acceptable voltage overshoot. Fig.8 shows an equivalent circuit used for analysis, in which thetriac has been replaced by an ideal switch. When the triac isin the blocking or non·conducting state, represented by theopen switch, the circuit is a standard RLC series networkdriven by an ac voltage source. The following differentialequation can be obtained by summing the voltage dropsaround the circuit:

(RL + RS) i(t) + L diet) + qcc(t) = VM sin (wt + ¢) (2)dt S

in which i(t) is the instantaneous current after the switchopens, qc(t) is the instantaneous charge on the capacitor, VMis the peak line voltage, and ¢ is the phase angle by whichthe voltage leads the current prior to opening of the switch.After differentiation and rearrangement, the equation be-comes a standard second-order differential equation withconstant coefficients. With the imposition of the boundaryconditions that i(O)=O and qc(O)=O, the equation for thecharge on the capacitor can be stated for the three circuitconditions as follows:

Condition II: (RL + RS)2 < 4L!C

-IVMIqc(t) =~cos (wt + ¢ + 0)

+ IQtI €.ext sin (~t + 1))

Condition 112: (RL + RS)2 = 4L!C

-IVMIqc(t) = ~cos (WI + ¢ + 0)

+ cext [(I + ext) qd + idt]

Condition 1l13: (RL + RS)2 > 4L!C

-IVMIqc(t) = ~cos (wt + ¢ + 0)

cext+ T[ (exqd + idt) sinh Ii'l + Ii 'qd cosh Ii 't 1

¢ = tan'] (w L!RL)

0= -tan -I [(WL-....!-C )!(RL + RS)]w S

RL + RS

, _~(RL + RS~2Ii - ---2L

I- LCs

_1__ f.RL + RS\ 2

LCS \ 2L 7

. I(RL + RS) + J(wL --C)w S

IVMIqd= wlZI cos(¢+O)+qc(O)

IVMIi(O) -1Zi sin (¢ + 0)

~[exqdli+id] 2 +qd2

(liqd )

1) = tan -I .exqd + Id

The voltage across the device is determined by calculatingthe voltages across the snubber capadtor and resistor fromthe following fundamental relations:

(t) _ qcCt)

vCS -C"S

dqcCt)vRS (t) = RS -d-t-

The sum of these two voltages then represents the instantan·eous voltage across the triac. The following equations givethe instantaneous voltage for the three circuit conditions:

Condition I: (RL + RS)2 <4L/C

-IVMI [ Iv(t)=-IZ-I-[wCS cos(wt+1>+O)

-RS sin (wI + 1>+ 0)] + IQtIE-<Xt

[C~ sin ({3t+ 1) + ~ sin ({3t+ 1) + IjI)J (18)

where IjJis defined by the following expression:

1jJ= tan-I ~)

Condition II: (RL + RS)2 = 4L/C

-IVMIvet) = -IZ-I-

~~s cos(wt + 1>+0) - RS sin(wt +¢ + 0)]

+_1_ [(I + <Xt)qd + idt] c<XtCs+ RS [(I - <Xt)id - <x2tqd] E-<Xt (20)

Condition III: (RL + RS)2 > 4L/C

-IVMI [ Ivet) = -I-Z-I- wCs cos (wt + ¢ + 0)

]

E-<Xt-RS sin (wt + 1>+0) +-,-(3 Cs

A computer is used to calculate the voltage across thesnubber because hand calculation is time-consuming. Themagnitude and time of occurrence of the peak voltage arefound by numerical analysis, and then the values and timesof the voltages at 10 per cent and 63 per cent of peak arecalculated. These values are used to compute the dv/dt stressas defined by the following equation:

dv _ V2-Vl/dt -t2=ti

where V I and t I are the voltage and time of the 10-per-centpoint and V2 and t2 are the voltage and time of the63-per-cent point. This program therefore allows evaluationof various load and snubber combinations in a matter ofminutes.

In general, it is most desirable from a cost standpoint touse a device with the lowest possible VDROM capability. Forapplications involving the control of a load operating on a120-volt ac line a device with a VDROM of 200 volts wouldbe desirable; a 400-volt device should be used for operationon a 220-volt line. The use of the lower-voltage device in anyapplication is contingent on the ability of the circuit to limitany possible voltage ringing below the VDROM rating of thedevice. The snubber can be designed to limit this voltageringing during the post-commutation period to within thisrating. Figs. 9 and 10 show the values of Cs and RS thatlimit peak voltage across the triac to specific values. Fig. 9allows the selection of snubber components that will limitthe peak voltage of 200 volts for a zero-power-factor load atthe desired dv/dt for an rms line voltage of 120 volts. Fig. 10shows the components that limit the voltage to 400 voltswhen the rms line voltage is 220 volts.

Snubber Design ProcedureFor use of the graphs, three things must be known: (I)

the rms line voltage, (2) the rms load current, and (3) theallowable dv/dt. The following procedure is used to obtainthe required snubber components:(I) Draw a vertical line on the proper voltage graph at the

load current.(2) At the intersection of the vertical line and the dashed line

that represents the allowable dv/dt, draw a horizontalline to the right vertical axis. Read the value of RS fromthe right vertical axis.

(3) At the intersection of the vertical line and the solid linethat represents the allowable dv/dt, draw a horizontalline to the left vertical axis. Read the value of Cs fromthe left vertical axis.As an illustration of the above procedure. Fig. 9 is used

to find snubber component values that limit the dv/dt stressto 5 volts per microsecond for a 40-ampere rms current in al20-volt rms line. From Fig. 9, these values are Rs = 340ohm and Cs = 0.18 microfarad.

As previously stated, these graphs were developed tolimit the peak voltage for a zero-power-factor load. For thenon-ideal load the graphs are used in the same fashion; a

reduction in the peak voltage following commutation and aslight reduction in the dv/dt stress are the only effcctsintroduced by the non-ideal load. The reduction in the peakvoltage excursion is caused by the decrease in instantaneousvoltage at the time of commutation. As the power factorincreases, the phase angle between the voltage and currentdecreases toward 00. This decrease in the phase angle shiftsthe time of commutation in the half-cycle toward thezero-voltage crossing and thus reduces the instantaneousvoltage. The reduction in the dv/dt stress is the result of boththe reduction in the voltage at commutation and theincreasing resistive impedance of the load.

'"'"~ t.o

~ :"1'"u

• ••I 10RMS LOAD CURRENT (I )-AMPERES

Fig. 9- Design curves for snubber that limits peak voltageto 200 volts for 120-volt ac line and zero powerfactor.

A numerical example shows how a load that is not purelyinductive reduces the peak voltage after commutation. Thesnubber components for 8 volts per microsecond at an rmscurrent of 22.7 amperes are found from Fig. 9 to be 960ohms and 0.04 microfarad. If the load is purely inductive,the peak voltage is limited to 200 volts. If the load has thesame current rating but a power factor of 0.7, this snubbernctwork limits the peak voltage after commutation to 140volts. Tlie peak voltage is reduced because the instantaneousline voltage at the time of commutation is only 121 volts.n,C dv/dt stress is also slightly lower than the 8-volts-per-microsecond value. n,is example demonstrates that thedcsign graphs of Figs. 9 and 10 can be used for loads havingany power factor.

Because the selection of snubber components is de-pendcnt on circuit and device characteristics, values obtainedmay be impractical from a cost or sizc standpoint. In such a

case, a triac with higher dv/dt capability or higher VDROMrating should be used. A higher dv/dt capability allowsselection of new snubber components to meet the size and/orcost requirements of the circuit. A higher VDROM ratingpermits a higher peak voltage excursion that in general willallow selection of a smaller snubber capacitor and smallerresistor.

The circuit analysis described in this Note assumes theeffects of the triac to be a minimum. Thus some error isintroduced by neglect of the reverse recovery process and thedisplacement current. The additional current flow tends toincrease the instantaneous dv/dt during the first fewmicroseconds following commutation. The over-all effect isto increase sliglllly the average dv/dt stress across the device.This effect is most noticeable when the snubber capacitanceis less than 0.001 microfarad. Selection of a snubber for alower dv/dt stress limit will generally eliminate this problem.

Because the design of a snubber is contingent on theload, it is almost impossible to simulatc and test everypossible combination under actual operating conditions. It isadvisable to measure the pcak amplitude and rate of rise ofvoltage across the triac after a snubber has been selected.

or'"~ 0.10u •

;t •;:;

468 468I 10 10D

RMS LOAD CURRENT (I.) - AMPERES

Fig. 10- Design curves for snubber that limits peak voltageto 400 volts for 220-volt ac line and zero powerfactor.

ReferencesI. Myril B. Reed, AJternati"g Current Circuit Theory (New

York: Harper & Brothers, 1948), pg. 276.2. Ibid, pg. 284.3. Ibid, pg. 284.

ffilCI8LJDSolid StateDivision


AN-6054

Triac Power Controls forThree- Phase Systems

The growing demand for solid-state sWitching of acpower in heating controls and other industrial applicationshas resulted in the increasing use of triac circuits in thecontrol of three-phase power. This Note explains a basicapproach to the ctesign of triac control circuits for use in theswitching of three-phase power. The basic design rulesemployed in this approach are outlined. an integrated-circuitzero-voltage switch specifically intended for use in triactriggering is briefly described, and the necessity for andmethods of isolation of the dc logic circuitry in powercontrols for three-phase systems are pointed out. Recom·mended configurations are then shown for power-controlcircuits intended for use with both inductive and resistivebalanced three-phase loads, and the specific design require-ments for each type of loading condition are discussed.(Unbalanced three·phase systems, which have differentdesign requirements, are not covered in this Note.)

In the power·contro! circuits described in this Note, theRCA-CA3059 integrated-circuit zero-voltage switch is used asthe trigger circuit for the power triacs. * The followingconditions are also imposed in the design of the triac controlcircuits:

I. The load should be connected in a three-wireconfiguration with the triacs placed external to theload; either delta or wye arrangements may be used.Four-wire loads in wye configurations can be handledas three independent single-phase systems. Deltaconfigurations in which a triac is connected withineach phase rather than in the incoming lines can alsobe handled as three independent single-phase systems.

*'n addition to the CA3059, the RCA-CA3058 and -CA3079integrated-circuit zero-voltage s\\'llchc'i may al50 be used for tfiactrjgg:erjn~ in the power-control circuits. All information given on theCA3059 in this Note is, in general, equally applicable to the CA3058and CA3079.

2. Only one logic command signal is available for thecontrol circuits. This signal must be electricallyisolated from the three-phase power system.

3. Three separate triac gating signals are required.4. For operation with resistive loads, the zero-voltage-

switching technique should be used to minimize anyradio-frequency interference (RFI) that may begenerated.

Integrated-Circuit Zero-Voltage Switch

The RCA-CA3059 integrated-circuit zero-voltage switchis intended primarily as a trigger circuit for the control ofthyristors and is particularly suited for use in thyristortemperature-control applications. Fig. I shows a functionalblock diagram of the CA3059 integrated-circuit zero-voltageswitch. This multistage circuit employs a diode limiter, athreshold detector, a differential amplifier, and a Darlingtonoutput driver to proVide the basic switching action. The dcsupply voltage for these stages is supplied by an internalzener-diode-regulated power supply that has sufficientcurrent capability to drive external circuit elements. such astransistors and other integrated circuits. The trigger pulsedeveloped by this circuit can be applied directly to the gateof an SCR or a triac. A built-in fail-safe circuit inhibits theapplication of these pulses to the thyristor gate circuit in theeven! that the external sensor for the integrated-circuitswitch should be inadvertently opened Or shorted. TheCA3059 may be employed as either an on-off type ofcontroller or a proportional controller, ctepending upon thedegree of temperature regubtion required.

Fig. 2 shows the schematic diagram for the CA3059integrated circuit. Any triac that is driven directly from theoutput terminal of this circuit should be characterized foroperation in the 1(+) Or 111(+) triggering modes, i.e., withpositive gate current (current flows into the gate for bothpolarities of the applied ac voltagc). The clfcuil opcrJtesdirectly from a 50-, 60-, or 400-Hz ac line voltage of 12(: to277 volts.

AC Input Voltage Input SerIes DISSipation Ratmg

(50/60 or 400 Hz) ReSIStor (RS) for RS

VAC k !! W

2. 2 0.5

120 '0 2

208/230 20 •271 25 5

Fig_ I-Functional block diagram of the CA3059 integrated-circuit

zero-voltage switch_

I---~-II

II 0.

II 0,

I

I RCA CAJ059L __ 1~EC.RATi.o. ....£~C~T _

ALL RESISTANCE VALUES ARE IN OHMS F AI1~p~iFE

transistor 0 I), which generates an oujput pulse during eachpassage of the line voltage through zero. The limiter output isalso applied to the rectifying diodes D7 and D 13 and theexternal capacitor CEXT that comprise the de power supply.The power supply provides approximately 6 volts (atterminal 2) as the de supply to the other stages of theCA3059. The on/off sensing amplifier (transistors 02through 05) is basically a differential comparator. The triacgating circuit contains a driver (transistors 08 and 09) fordirect triac triggering. The gating circuit is enabled when allthe inputs are at a high voltage, Le., the line voltage must beapproximately zero volts, the sensing-amplifier output mustbe "high", the external voltage to terminal I must be alogical" I", and the output of the fail-safe circuit must be'-high".

Fig. 3 shows the position and width of the pulsessupplied to the gate of a thyristor with respect to theincoming ac line voltage. The CA3059 can supply sufficientgate voltage and current to trigger most RC A thyristors atambient temperatures of 250C. However. under worst-caseconditions (i.e., at low ambient-temperature extremes andmaximum trigger requirements), selection of the higher-current thyristors may be necessary for particular applica-tions. (The RCA technical bulletin File No. 406 lists triacsdesigned for use with the integrated·circuit zero-voltageswitch as the triggering circuit. Detailed information on theoperating characteristics and capabilities of this integratedcircuit are given in RCA technical bulletin File No. 490, RCAapplication note ICAN-6182, and the ReA Linear IntegratedQrcuits Manual, IC-42.)

As shown in Fig. I, when terminal 13 is connected toterminal 14, the fail-safe circuit of the CA3059 is operable. Ifthe sensor should then be accidentally opened or shorted,power is removed from the load (i.e., the triac is turned off).The internal fail-safe circuit functions properly, however,only when the ratio of the sensor impedance at 250C. if athermistor is the sensor, to the impedance of the poten-tiometer. Rp is less than 4 to I.

LI NE /'., /'.,VOLTAGE / \. / \.

-+-7 -----V--+--~"J<--~

Fig. 3- Timing relationship between the output pulses ofthe CA3059 and the ac line voltage (pulse durationshown is a typical value for operation from a720-volt 60·Hz line voltage).

for polyphase power systems, however, this type of isolationis essential, because the common point of the de logiccircuitry cannot be referenced to a common line in allphases.

In the three-phase circuits described in this Note,photo-optic techniques (i.e., photo-coupled isolators) areused to provide the electrical isolation of the de logiccommand signal from the ac circuits and the load. Thephoto-coupled isolators consist of an infrared light-emittingdiode aimed at a silicon photo transistor, coupled in acommon package. The light-emitting diode is the inputsection, and the photo transistor is the output section. Thetwo components provide a voltage isolation typically of 1500volts. Other isolation techniques, such as pulse transformers,magnetoresistors, or reed relays, can also be used with somecircuit modifications.

Resistive LoadsFig. 4 illustrates the basic phase relationships of a

balanced three-phase resistive load, such as may be used inheater applications, in which the application of load power iscontrolled by zero-voltage switching. The following con-ditions are inherent in this type of application:

1. The phases are 120 degrees apart; consequently, allthree phases cannot be switched on simultaneously atzero voltage.

2. A single phase of a wye configuration type ofthree-wire system cannot be turned on.

3. Two phases must be turned on for initial starting ofthe system. These two phases form a single-phasecircuit which is out of phase with both of itscomponent phases. The single-phase circuit leads onephase by 30 degrees and lags the other phase by 30degrees.

These conditions indicate that in order to maintain asystem in which no appreciable RFI is generated by theswitching actIOn from initial starting through the steady-stateoperating condition, the system must first be turned on, byzero-voltage switching, as a single-phase circuit and then mustrevert to synchronous three-phase operation.

Fig. 5 shows a simplified circuit configuration of athree-phase heater control that employs zero-voltagesynchronous switching in the steady-state operatingcondition, with random starting. In this system, the logiccommand to turn on the system is given when heat isrequired, and the command to turn off the system is givenwhen heat is not required. Time proportioning heat control isalso possible through the use of logic commands.

*Thc de logic circuitry provide" the low-level electrical signal thatdictates the state of the load. For temperature controls, the de logiccircuitry includes a temperature sensor for feedback. The ReAintegrated-circuit zero-voltage 'iwitch. when operated in the de modewith "orne additional circuitry, can replace the de logic circuitry fortemperature controls.

TO3 PHASERESISTIVElOAD

(DELTA OR WYEI

Fig. 6-Three-phasepower control that employs zero-voltage synchronous switching bothfor steady-state operation and for starting.

as start-up is accomplished, the three photo-coupled isolatorsOCI3, OCI4, and OCI5 take control, and three-phasesynchronization begins_ When the "logic command" is turnedoff, all control is ended. and the triacs automatically turn offwhen the sine-wave current dccreases to zero. Once the firstphase turns off. the other two will turn off simultaneously,90° later, as a slflgi~·pllasc line·to-Iine circuit, as is apparentfrom Fig. 4.

Inductive Loads

For inductive loads, zero·voltage turn·on is not generallyrequired because the inductive current cannot increaseinstantaneously; therefore, the amount of RFI generated is

usually negligible. Also, because of the lagging nature of theinductive current, the triacs cannot be pulse-fired at zerovoltage. There are several ways in which the CA3059 may beinterfaced to a triac for inductive-load applications. The mostdirect approach is to use the CA3059 in the dc mode, i.e_, toprovide a continuous dc output instead of pulses at points'ofzero-voltage crossing. This mode of operation is accom-plished by connection of terminal 12 to terminal 7, as shownin Fig. 7. The output of the CA3059 should also be limitedto approximately 5 milliamperes in the dc mode by the750-ohm series resistor. Use of a triac such as the RCAT230lD is recommended for this application. Terminal 3 isconnected to terminal 2 to limit the steady-state power

RANDOMSTART-UP

POINT

V2

30"--1

Fig. 4- Voltage phase relationship for a three-phase resis-tive load when the application of load power iscontrolled by zero-voltage switching: (a) voltagewaveforms, (b) load-circuit orientation of voltages.(The dashed lines indicate the normal relationshipof the phases under steady-state conditions. Thedeviation at start-up and turn-off should be noted.)

The three photo-coupled inputs to the three CA3059circuits change state simultaneously in response to a "logiccommand". The CA3059 circuits then provide a positivepulse, approximately 100 microseconds in duration, only at azero-voltage crossing relative to their particular phase. Abalanced three-phase sensing circuit is set up with the threeCA3059 circuits each connected to a particular phase ontheir common side (terminal 7) and referenced at their highside (terminalS), through the current-limiting resistors R4,R5, and R6, to an established artificial neutral point. Thisartificial neutral point is electrically equivalent to theinaccessible neutral point of the wye type of three-wire loadand, therefore, is used to establish the desired phaserelationships. The same artificial neutral point is also used toestablish the proper phase relationships for a delta type ofthree-wire load. Because only one triac is pulsed on at a time,the diodes (0 I, 02, and 03) are necessary to trigger theopposite-polarity triac, and, in this way, to assure initiallatching-on of the system. The three resistors (R I, R2, andR3) are used for current limiting of the gate drive when theopposite-polarity triac is triggered "on" by the line voltage.

In critical applications that require suppression of allgenerated RFI, the circuit shown in Fig. 6 may be used. Inaddition to synchronous steady-state operating conditions.this circuit also incorporates a zero-voltage starting circuit.The start-up condition is zero-voltage synchronized to asingle-phase, 2-wire, line-to-line circuit, comprised of phasesA and B. The logic command engages the single-phase"start-up" CA3059 and three-phase photo-coupled isolatorsOCI3, OCI4, OCI5 through the photo-coupled isolators OCIIand OCl2. The single-phase CA3059, which is synchronizedto phases A and B, starts the system at zero voltage. As soon

3 - PHASERESISTIVE LOAD(DELTA OR WYE)

Fig. 5-Simplified diagram of a three-phaseheater control that employs zero-voltage synchronousswitching in the steady-state operating conditions.

dissipation within the CA3059. For most three-phaseinductive load applications, the current-handling capabilityof the T230 I D triac (2.5 amperes) is not sufficient. Therefore,the T2301D is used as a trigger triac to turn on any othercurrently available power triac that may be used. The triggertriac is used only to provide trigger p.).llses to the gate of thepower triac (one pulse per half cycle); the power dissipationin this device, therefore, will be minimal.

Simplified circuits using pulse transformers and reedrelays will also work quite satisfactorily in this type ofapplication. The RC networks across the three power triacsare used for suppression of the commutating dv/dt when thecircuit operates into inductive loads. (A detailed explanationof commutating dv/dt is provided in the basic discussion ofthyristors in the ReA Solid-State Power Circuits Designer'sHandbook. SP·52.)

AppliCatiOn NOteAN-6096

Solid-State Approaches toCooking-Range Control

As a result of decreasing semiconductor costs, advancedsystem-cost analysis by appliance manufactu'ers, and increasedconsumer consciousness, various solid-state range-control de-signs can be applied to today's market. This Note presentsvarious solid-state design approaches available to the range-control designer.

Design and Function ConsiderationsThe primary areas of range control design to be considered

are the various heating elements: the oven, broiler, and topburners. The most popular method of control of these units isby switching relays or "infinite-switch"-type heat-sensitiveswitches. Such controls generate radio-frequency interference,RFI, and can have limited life with respect to switching cyclesbecause of contact failures. In addition, the nest of wiringusually needed to interconnect the incoming power line and thevarious independent loads results in substantial labor costs andpossible substantial in-line reworking of ranges to accommodatedesign changes or failures. Calibration of these controls isgenerally cumbersome and time consuming because multiplesettings are usually involved. However, from the standpoint ofparts cost, the control is acceptable.

Semiconductor costs have been decreasing, and are ap-proaching electromechanical-component costs; however, tojustify the use of solid-state controls, cost factors other thanactual parts costs must be considered. The reliability and theease of handling of solid-state controls add to their dependableoperation and desirability. Dependability can be measured infewer in-line design corrections and possibly fewer calibrations,and, in turn, lower manufacturing costs. Lower manufacturingcosts coupled with the ease of handling of printed circuitboards, which eliminate the nest of wiring, represent a furtherover-all system-cost reduction.

Other advantages of solid-state-control designs are manifestin their ability to accept design change or add-on designs tosatisfy a customer's desire for improved products. For example,the self-cleaning feature is easily incorporated in the variousoven controls; this feature is discussed in detail below.

Before any particular design approaches are discussed, areview of some of the characteristics of the devices used is rec-

ommended. Because of the unusually high ambient tempera-tures that can be encountered in various areas of the range,caution must be used in locating the semiconductors, particu-larly the power devices. Areas on the range that allow for themounting of these devices and/or their heat sinks should' bedetermined by the appliance manufacturer according to tem-perature profiles of his enclosure.

Top-Burner ControlsAs an introductory method of control, a retrofit approach to

the top-burner design where "infinite" control is used isexamined. A single-time-constant phase-control circuit is usedon each burner as the infinite control. Fig. I shows the sche-matic diagram of the circuit; Fig. 2 shows the various wave-

:~~-----+---~.-----~.,----~.,~~ ..AC

TYPICAL VALUES:Llf;IOO~H R1=2.2K

elf :0.1 I'F CI =0.1 ~FPI :250 K

Fig. 1- Schematic diagram of retrofit-type top-burner control.

forms for the circuit. Because each heater-control circuit isidentical, an examination of one, Bj, is suflicient for an under-standing of all of the circuits. Potentiometer PI, resistor R j ,and capacitor C 1 form a 60-Hz voltage divider in which highvalues of resistance for PI limit the peak voltage swing on Cj.The diac, which is a three-layer, p-n-p device, exhibits a highimpedance until a peak voltage of approximately 32 volts isapplied across it. At this time it displays a negative resistance.

D~32 V PKL:L LJ,...

'(J'" "

Fig. 2- Waveforms for the circuit of Fig. 1.

Therefore, if the potentiometer is set to allow capacitor CI tocharge up to 32 volts peak, the capacitor discharges throughthe diac into the gate of the triac and turns the triac on to itslow-impedance state. This action is repeated every half cycle.Llf and C!fare included to suppress the RFI generated by theswitching wavefront of the triac.

This type of circuit is a retrofit design, but it has several dis-advantages. These disadvantages include cost, the need for RFIfJ.1tering(a substantial part of the total cost), and the need forconsiderable hand wiring, as the bulky discrete components donot warrant printed-circuit-board mounting. However, infinite-switch-type control of the burners is accomplished, and thefeasibility of solid-state device use in the control design isdemonstrated.Oven/Broiler Controls

Fig. I shows that the triac can be used to switch the burnerelements without arcing or contact bounce, but the resulting"clean" waveform, Fig. 2, still has a high-frequency content inthe AM broadcast band. To suppress this nuisance, a costlyRFI filter must be incorporated in the design. The triac canstill be utilized, however, by using another circuit approach,zero-voltage switching, ZYS, that can switch the heavy resis-tive loads with minimized RFI generation.

Zero-voltage switching is demonstrated in the oven controlcircuit shown in Fig. 3. In this circuit, a sensor element is in-

BROILER

IL'~:>-----"'~~-«0L.JL...J4

!OOFF A OVEN

IIIII

p,L

cluded in the oven to provide a closed-loop system for accuratecontrol of the oven temperature. The RCA CA30591 ,2 is usedto accomplish the zero-voltage logic switching; the functionalblock diagram for the CA3059 is shown in Fig. 4. *

Fig. 4- Functional block diagram of CA3059 ;ntegrated-.e;rcuitzero-voltage switch.

The limiter stage of the CA3059 clips the incoming ac linevoltage to approximately ±8 volts. This signal is then applied tothe zero-voltage-crossing detector, which generates an outputpulse during each passage of the line voltage through zero. Thelimiter output is also applied to a rectifying diode and an ex-ternal capacitor that comprise the dc power supply. The powersupply provides approximately 6 volts, as the YCC supply, tothe other stages of the CA3059. The on/off sensing amplifier isbasically a differential comparator. The triac gating circuit con-tains a driver for direct triac triggering. The gating circuit isenabled when all the inputs are at a high voltage; i.e., the linevoltage must be approximately zero volts, the sensing-amplifieroutput must be high, the external voltage to terminal I must bea logical I, and the output of the fail-safe circuit must be high.

Fig. 5 shows the circuit diagram of the CA3059. The zero-voltage threshold detector consists of diodes D3, D4' D5, andD6, and transistor Q I' The differential amplifier consists oftransistor-pairs Q2-Q4 and Q3-Q5' Transistors QI, Q6' Q7'Q8' and Q9 comprise the triac gating circuit and driver stage.Diode D12, zener-diode D15, and transistor Q I0 constitute thefail-safe circuit. The power supply consists of diodes D7 andD13 and an external resistor and capacitor connect~d to ter-minals 5 and 2, respectively, and to ground through pin 7. Iftransistor pair Q2-Q4 and transistor QI are turned off, anoutput appears at terminal 4. Transistor QI is in the off state ifthe incoming line voltage is less than approximately the sum ofthe voltage drops across three silicon diodes (2.1 volts) foreither the positive or negative excursion of the line voltage.Transistor pair Q2-Q4 is off if the voltage across the sensor,connected from terminals 13 to 7, exceeds the reference voltagefrom 9 to 7. If either of these conditions is not satisfied, pulsesare not supplied to terminal 4. Fail-safe operation requires thatterminal 13 be connected to terminal 14. The addition of

Og

:€K"R8

15R6 Rg15K 25

ALL RESISTANCE VALUES ARE IN OHMS

Fig. 5- Schematic diagram of CA3059 zero-voltage switch.

hysteresis and the elimination of half-cycling can be achievedby a resistive voltage divider connected from terminals 13 to 8and from 8 to 7.

As shown in Fig. 3, the temperature of the oven can be ad-justed by means of PI, which acts, along with the sensor, as avoltage divider at terminal 13. The voltage at terminal 13 iscompared to the fixed bias at terminal 9 which is set by in-ternal resistors R4 and RS' When the oven is cold and the re-sistance of the sensor is high, Q2 and Q4 are off, a pulse of

gate current is applied to the triac, and heat is applied to theoven. Conversely, as the desired temperature is reached, thebias at terminal 13 turns the triac off. The closed-loop featurethen cycles the oven element on and off to maintain the desiredtemperature to approximately ±20C of the set value. Also, ashas been noted, external resistors between terminals 13 and 8,and 7 and 8, can be used to vary this temperature and providehysteresis. In Fig. 6, a circuit that provides approximatelyIO-per-cent hysteresis is demonstrated.

NTC RI R2

5 K 12 K 12 K

12 K 68 K 12 ~

lOOK 200K 18 K

In addition to allowing the selection of a hysteresis value,the flexibility of the control circuit permits incorporation ofother features. A PTC sensor is readily used by interchangingterminals 9 and 13 of Fig. 3 and substituting the PTC for theNTC sensor. Note that in both cases the sensor element isdirectly returned to the system ground or common, as is oftendesired. Terminals 9, 10, and II, Fig. 3, can be connected byexternal resistors to provide for a variety of biasing, e.g., tomatch a lower-resistance sensor for which the switching pointvoltage has been reduced to maintain the same sensor current.

To accommodate the self-cleaning feature, external switch-ing, which enables both broiler and oven units to be paralleled,can easily be incorporated in the design. Of course, the poten-tiometer must be capable of a setting such that the sensor,which must be characterized for the high, self-clean tempera-ture, can monitor and establish control of the high-temperature,self-clean mode. The ease with which this self-clean mode canbe added makes the over-all solid-state system cost-competitivewith electromechanical systems of comparable capability. Inaddition, the system incorporates solid-state reliability whilebeing neater, more easily calibrated, and containing less-costlysystem wiring.

Low-Resistance SensorThe circuit of Fig. 3 performs well with sensor values in the

5- to I O-kilohm range, and is used widely in home comfort con-trols. Although PTC sensors rated at 5 kilohms are available,the existing sensors in ovens are usually of a much lower value.The circuit depicted in Fig. 7 is offered to accommodate these

92CS- 20842

Fig. 7- Schematic diagram of circuit for use with low-resistance sensor.

inexpensive metal-wound sensors. A schematic diagram of theRCA CA3080, the operational transconductance amplifier usedin Fig. 7, is shown in Fig. 83 With an amplifier bias current,IABC, of 100 microamperes, a forward transconductance of 2millimhos is achieved in this configuration. The CA3080switches when the voltage at terminal 2 exceeds the voltage atterminal 3. This action allows the sink current, Is, to flow fromterminal 13 of the CA3059 (the input impedance to terminal13 of the CA3059 is approximately 50 kilohms); gate pulsesare no longer applied to the triac because Q2 of the CA3059 ison. Hence, if the PTC sensor is cold, i.e., in the low resistance

state, the load is energized. When the temperature of the PTCsensor increases to the desired temperature, the sensor entersthe high resistance state, the voltage on terminal 2 becomesgreater than that on terminal 3, and the triac switches the loadoff. Further cycling depends on the voltage across the sensor.Hence, very low values of sensor and potentiometer resistancecan be used in conjunction with the CA3059 power supplywithout causing adverse loading effects and impairing systemperformance.

Proportional Zero-Voltage SwitchingZero-voltage switching control can be extended to appli-

cations in which it is desirable to have constant contrel of thetemperature and a minimization of system hysteresis. A closed-loop top-burner control in which the temperature of thecooking utensil is sensed and maintained at a particular valueis a good example of such an application; the circuit for thiscontrol is shown in Fig. 9. In the circuit, a unijunction oscil-lator is outboarded from the basic control by means of theinternal power supply of the RCA CA3079. The output of thisramp generator is applied to terminal 9 of the CA3079 andestablishes a varied reference to the differential amplifier.

0--<.•....( ----t=<-------<I

nov60Hz

I

AN-6096 _

hot sensor. For precise temperature regulation, the time base ofthe ramp should be shorter than the thermal time constant ofthe system but longer than the period of the 60-Hzline. Fig. 10,which contains various waveforms for the system of Fig. 9,indicates that a typical variance of ±O.SoC might be expectedat the sensor contact to the utensil. Overshoot of the set tem-perature is minimized with this approach, and scorching ofany type is minimized.

VLOAD120V

GO-Hz

Now that the feasibility of a solid-state control for therange has been established, the various approaches can bejoined and a system constructed. The phase-control circuitcould be used for three lOp burners, the proportional control

I-III RI

I ~o"~2ig v I

I 39RJ n

I 2 W

L_

Central-ProcessorSince the phase-control top-burner arrangement of Fig. I

requires excessive handling in construction and does not lenditself to printed-circuit-board construction, it is recommendedthat a more compact, less expensive, total printed-circuit-boardapproach to the range control be investigated. Further, in orderto cut system costs, it is recommended that similar circuitfunctions be multiplexed or shared as much as possible in onearea in the circuit. A design that meets these requirements isshown in the block diagram of Fig. I J and the schematicdiagram of Fig. 12. The top burners Ll, L2, L3, and L4

---,IIII

I

III

__ J

(Fig. 12) are all controlled by the single logic bank of COS/MOScircuitry composed of the RCA CD4013A and the RCA

SET 1 6

DI 5

ClOCKl 3

RESET I 4

SET 2 8

D2 9

CLOCK2 II

RESET 2 10

7

vss92C5-20838

VDD

16

DATA A °IA

CLOCK A 4 °2ASTAGE

RESET A ° 3A10

°4A

DATA B 15 13°IB

CLOCKa 12° 2B4

14 STAGERES~T B °3B

°4B

B

Vss92CS- 20837

CD4015A; the logic diagrams of these devices are shown inFigs. 13 and 14.

The RCA CD4013A consists of two identical independentdata-type flip-flops. Each flip-flop has independent data, set,reset, and clock inputs and Q and Q outputs. These devices canbe used for shift-register applications and, by connecting the Qoutput to the data input, for counter and toggle applications.The logic level present at the D input is transferred to the Qoutput during the positive-going transition of the clock pulse.Setting or resetting is independent of the clock and is accom-plished by a high level on the set or reset line, respectively.

The CD4015A consists of two identical independent four-stage serial-input/parallel-output registers. Each register has

independent clock and reset inputs as well as a single serialdata input. Q outputs are available from each of the fourstages on both registers. All register stages are D-type master-slave flip-flops. The logic level present at the data input istransferred into the first register stage and shifted over onestage at each positive-going clock transition. Resetting of allstages is accomplished by a high level on the reset line. Registerexpansion to eight stages using one CD4015A package, or tomore than eight stages using additional CD40 l5A's, is possible.

With the CD4015A connected as an eight-stage register andthe CD4013A used as the reset, the waveforms of Fig. 15

~~E ~ A A A A A A flJ\ A A A f\1j A A A~LTAGE ~VV Vl) If V IfIJlJVl[\[VVV V\[V

CLOCK A A A A A A A A " A A A A A A A fIc

POSITION W DAM A A A Af\P Ab V V \[VVIJV \[V

result when clocking pulses are applied from the clock stage, asimple RC diac oscillator (60 Hz). The outputs of theCOS/MOS register are fed to the eight-position rotary-selectorswitch for selection of the duty cycle to be applied to the load.The output of the rotary switch is connected to the drivetriacs through the Darlington-connected triac gate drivers.These drivers are made up of pairs of transistors from the RCACA3082, a seven-transistor, high-current (100 milliamperes),silicon, n-p-n array. The bases of the input transistors of theDarlington drivers are all connected to the collector of Q I,the zero-vol tage sensing transistor, so that triac gate-drivepulses are applied only when the ac line voltage is approximately±2.1-volts peak. That is, base drive shunted from the Darlingtondrivers by Q I causes zero-voltage switching of the triacs andrestricts the average power drain of the dc supply by pulsingthe triac gates. This circuit arrangement results in minimizedRFI. Fig. 16 demonstrates the power waveforms for the circuit

of Fig. 12. Fig. 17 demonstrates the effect of the zero-voltagesensing transistor, Q I, and the relationship between the variousCaS/MaS outputs and the base drive and subsequent gatedrive of the Darlington drivers. By using an additional selectorswitch, triac, and related gate circuitry (made up of spare tran-sistors in the CA3082) a controllable convenience outlet can beprovided. This outlet can be used for an electric fry-pan,

POSITION _r===J _h COS/MOS OUTPUT

POSITION _n~n~n~n _h

coffee maker, waffle iron, toaster, etc., and can be controllablein the same manner as the top-burner elements.

An oven control is incorporated in the design by using anRCA CA3086, an array of five n-p-n transistors with one pairdifferentially-connected as a Schmitt trigger in closed-loopconfiguration. Again, the common de supply of the system isused in addition to the zero-voltage sensing transistor, Q I. Anadditional Darlington pair available in the CA3082 is used fortriac gating. As shown in Fig. 12, an NTC sensor, TH I , forms avoltage divider with the potentiometer, Pl. the temperature-selector switch. The input transistor of the Schmitt trigger is aDarlington pair to provide sensitivity. Resistor R8 is chosen toallow for the desired amount of circuit hysteresis. When thesensor is cold and has a large resistance, the Darlington inputis turned on and causes output transistor Q I to turn off. TheVCC fed to the zero-voltage sensing transistor and respectivegate drive switches the oven on. As the desired oven tempera-ture is reached, the sensor resistance decreases and the voltage

it controls drops below the SWitching threshold of the Schmitttrigger; this drop in voltage removes the gate drive to the oven.A PTC sensor could easily be used by inverting the sensor andpotentiometer. Of course, with proper external switching ofthe oven elements and the incorporation of a fixed resistor tobias the Schmitt trigger to the high temperature of the self-cleaning mode, self-cleaning action can be accommodated bythis system. Care must be taken, particularly with the locationof the power triac for the oven, to afford the best possibleambient temperature conditions and heat sinking.

ConclusionsWith the circuitry of Fig. 12, control of the temperature of

the top burners is provided without the need for calibration ofa sensor element, and the design is well suited for printed-circuit-board-module use. Extension of the circuit conceptcould lead to a future hybrid design incorporating custom chips.The nest of wiring which is now present in ranges is minimizedby the use of the printed-circuit board. Zero-voltage switchingof the power elements results in minimized RFI, while thesingle calibration between PI and TH I or an auxiliary cali-bration potentiometer is the only calibration necessary in theoven control. These concepts should lead to easier manufacturewith limited in-line failures, because the printed-circuit-boardmodules could be tested before assembly into the range, andlower manufacturing costs because of the decreased amount ofwiring. The history of solid-state dependability should also bereflected in the low amount of field failures.

ReferencesI. "Application of RCA-CA3058 and RCA-CA3059 Zero-

Voltage Switches in Thyristor Circuits", by George J.Granieri, RCA Application Note ICAN-6158.

2. "Applications and Extended Operating Characteristics forthe RCA-CA3059 IC Zero-Voltage Switch", by H. M.Kleinman and A. Sheng, RCA Application Note ICAN-6268.

3. "Applications of the CA3080 and CA3080A High-Perform-ance Operational Transcondu~tance Amplifiers", by H. A.Wittlinger, RCA Application Note ICAN-6668.

4. "Linear Integrated Circuits-Building Blocks for ControlApplications", by George J. Granieri, RCA Reprint ST-6053.

Power Switching UsingSolid-State Relay

Solid-state relays make use of a semiconductor device for controlof ac or de power. Since, in most ac applications, the semiconductorelement chosen for power control is the triac. this Note describes thetriac as a power-switching element. Advantages and disadvantages ofthe active element over the electro-mechanical relay are discussed ingeneral terms. Basic parameters. such as surge in-rush capability.transient-voltage ratings, suppression network, turn-off considerationand the different modes of triac gating are also discussed. AC powercontrol is covered by various circuit designs for ON/OFF control.zero-voltage switching, and line-voltage isolation.

Power switching using electromechanical relays (EMR) is prob-ably as old as the electrical industry is. The EMR is a controlled de-vice having either an ON state or an OFF state capable of handlinglarge amounts of power for a relatively low input power; it has wide-spread use in power and logic circuits. The relay comes in manyforms (general purpose, telephone type, TO-S. reed. mercury wetted.etc.) and has various contact configurations. During the past fewyears, the EMR has been challenged by a new breed of relay whichhas no moving parts, is capable of handling large amounts of powerfor relatively low input power, and that comes in many package andcircuit configurations. This new breed has been dubbed the "Solid-State Relay" or SSR, and uses transistors for dc power-control ortriacs for ac power control. The SSR is particularly useful in areasin which increased reliability is required, and in which shock ormechanical fatigue impose severe limitations on the electromechani-cal relay. The major limitations to SSR use are economic factors. lineisolation, immunity from line transients, and the need for multiple-pole arrangements.

Thyristors (silicon controlled rectifiers and triacs) are semicon-ductor switches whose bistable state depends upon the regenera-tive feedback associated with a p-n-p-n structure. The SCR is a uni-directional device used primarily for dc and ac functions. whereas thetriac is a bidirectional device used primarily for control of ac power.

The fabrication of a standard, glass-passivated triac requires theseven basic steps illustrated in Fig. I and delineated below.

I. The process begins with an n-type, high-resistivity, siliconwafer;

2. p layers are diffused deeply into both sides;3. Silicon-dioxide diffusion masks are grown, and p+ regions are

defined and diffused into the wafer;4. A second oxide diffusion mask is grown, and n+ regions are

defined and diffused into the wafer:5. A silicon-dioxide etch mask is grown and defined. Grids and

gate moats are etched into the wafer;

5 TART ING MATERIAL:HIGH- RESISTIVITYn-TYPE SILICON

GROW SILICON DIOXIDEFILM. DI:FINE ANDD'FFllSE p+ REGIONS,

GROW SILICON DIOXIDEFILM. DEFINE ANDDIFFUSl n+ REGIONS.

DEFINE AND ETCHGATE MOATS AND.GRIDS.

APPLY AND FIRE HARDGLASS PASSIVATINGLAYER.

OPEN CONTACT AREASAND METALLIZE.NICKEL· LEAD-TINSOLDER. LASER-SCRIBtAN(l BREAK INTOPELLETS.

6. A hard glass-passivated layer is applied in the grids and gatemoat;

7. Contact areas are opened on the wafer and nickel-Ieact-tinsolder metallization is applied. The wafer is then laser-scribedand separated into pellets. Fig. 2 contains an isometric view of acompleted triac and dimensions of three devices now available or inthe design stage.

The effects of voltage and temperature are important in thyristorsbecause of the regenerative action of these devices, and because they

are often required to support high voltages under high temperatureconditions. The imposed voltages create a field at the junction inter-face, and the increased temperature releases additional surface ions.Should the field concentrate the additional surface charge and allowit to migrate into the gate region. non-gated turn-on may occur. Mostmanufacturers realize that the gate region must be terminated forhigh voltage/temperature operation, and a shunt resistance is builtinto the triac pellet during fabrication. This shunt reduces the im-munity of the triac to non-gated turn-on. Additional reliability canbe gained by operating the triac under less severe voltage/temperatureconditions.

One of the features that has made thyristors the work-horses of thepower semiconductor industry is their ability to absorb in-rush cur-rents many times in excess of their steady-state ratings. This uniquefeature results from the regenerative action of the thyristor, an actionwhich maintains the internal beta at a level such that. under in-rushconditions, the charge density is equally distributed over the entiretriac pellet. The equal charge distribution assures the presentation ofa low impedance to the in-rush current. Each manufacturer clearlyrates device surge capability from single cycle to multiple cycles.Since this rating cannot be exceeded repeatedly. care should beexercised in the actual application to provide a sufficient safetymargin between the published ratings and the actual circuit in-rushcurrents.

Another important parameter associated with a triac is its di/dtrating, a parameter most significant during turn-on. With the initi-ation of a gate signal, the active area closest to the gate region is,essentially, turned on, and, for a few microseconds, the instan-taneous power dissipation is a function of the rate of rise of the on-state current. This power dissipation may cause localized heating andresult in silicon-lattice destruction and triac degradation. The di/dtratings are a function of triac geometry and pellet size, and ratings of100 Alps are easily achieved. In most circuit applications, stray oractual-load inductance is present, and for the condition of di/dt =Epk/L, it is easily seen that a few microhenries of inductance are allthat are required to limit circuit di/dt to within the maximum rating.When di/dt ratings are exceeded, it is usually because of the RCsnubber network in parallel with the triac. In such networks, strayinductance is essentially zero, and the magnitude of discharge currentis limited by the snubber resistance. The di/dt in the snubber is notaffected by the inductance added to quell the di/dt caused by thestray or actual-load inductance: only careful selection of RC-snubber-network components will eliminate this second source of di/dt andminimize triac failures.

It is well known that triacs are susceptible to non-gated turn-onand possible damage as a result of transient voltages. Transients aregenerally caused in a triac by the switching of inductive loads on ad-jacent lines or in proximity to the device. If the transient voltagegcnerated exceeds the critical rate*of-rise of the off-state voltage(dv/dt) then a displacement current (i = C·dv/dt) is generated whichcauses non-gated turn-on. Non-gatcd turn-on is not destructive if theenergy transfer is within the maximum rating of the device; however,if the transient voltage does not exceed the off-state dv/dt rating, butdoes exceed the maximum voltage rating, then triac breakoveroccurs. Whether triac degradation occurs is dependent on whetherthe energy transfer is within the bulk silicon or the edge avalance.

Although the transient-voltage problem may seem critical, thereare precautions that can be taken to minimize it. The use of RCsnubbers in parallel with the triac can reduce the rate of imposedtransients. This arrangement is most effective for fast rising, short-duration line disturbances. For critical applications. the use of avoltage-clipping device in addition to an RC snubber effectivelysuppresses both the rate of rise and magnitude of line-generatedtransients.

Another type of transient particularly prevalent in the area ofinductive loads. and often overlooked, is the circuit-induced transient.Consider an inductive load in series with a triac and RC snubber net-work which also includes a switch for line-voltage interruption. Withthc triac in the off state. a leakage current nows which is a functionof the characteristics of the load, the RC snubber network, and triacleakage. If the switch is momentarily opened when the triac is off,thcn a voltage transient (E = L·di/dt) is generated which can exceedthe voltage rating of the triac, cause non-gated turn-on and abruptcnergy transfer: and may result in damage to the triac. Again, theproper selection of RC-network components and voltage-clipping de-vice will suppress the circuit-induced transient to a level compatiblewith the voltage rating of the triac.

The term "turn-off time" is not associated with triacs since triacsarc bidirectional, and reverse voltage is nothing more than a forwardvoltage to one-half of the triac chip. A new term, "critical-rate-of-rise-of-coml1lutation-voltage", is used with triacs. The term describesthe ability of the triac to turn off as the current passes through zero,or com mutates. One must remember that the triac is a current-de-pendent device: current is injected into the gate to turn the deviceon, and current must be removed or allowed to pass through zero forturn-off regardless of what the source-voltage poLarity is. Commu-tating dv/dt is less critical with resistive loads and most importantwith inductive loads. Consider an inductive load in which the loadcurrent lags the source voltage by a phase angle O. As pointed out,

triac commutation occurs at zero current, whereas the source voltagehas some magnitude E. As the load current crosses the zero point,a small reverse current is established as a result of the charge in then-type region. This charge, plus a displacement current (i = C'dv/dt)resulting from the reapplied source voltage, can cause the triac to turnon in the absence of a proper gate signal. A minimum commutatingdv/dt at rated current and at a specific operating case temperatureshould be defined in all triac applications; the circuit designer can usethese specifications to choose an RC snubber network that will limitthe reapplied dv/dt to within ratings. Loss of triac control as a resultof commutating dv/dt does not degrade the characteristics of thetriac. Proper RC snubber network selections for worst-case condi-tions of load power· factor, current, and voltage are easily made byuse of the charts shown in Fig.3.

VALUES ON CURVESARE IN V/~s I

I

46s1 46Sl0

LOAD CURRENT- AIe I 92CS- 21Zl6

10. 220 -VOLT LINE 10'•· y

,I' '- ~;,.;: I /1

'." ."0

./'

10'~ • s.tz. '".. • -~ '" ~I /'': ' ••.. ~ / 0

w , Iu >< .... IY, /z103 ~;! O.l

eu • X ~ ~~ ·" 1./ / 1"..<' '- ~ Viu , w

10.01s/' /' ,/ •..•. .•.•. '"

10' I" I• A"~· /

- :-. I, I. ,0 VALUES ON CURVES-l-

0.001 / /.Vrl ARE rlN VIps j

'0, . ., , . ., ,

I 10LOAD CURR ENT - A

(bl

Before the advantages of SSR's are discussed, the types availableshould be reviewed.

Two types of SSR are available: all solid-state and hybrids. Thesolid-state class employs solid-state devices for both logic and triacgating, Hybrids generaHy use a reed relay for triac gating for acpower control and so combine the electromechanical with solidstate. In either class, the triac is used as the solid-state element for ac

power control. A comparison of SSR's with electromechanical relaysis given below.

Life: An EMR physically makes and breaks load current, and therelay contacts deteriorate with life.SSR's: They have no moving parts, and may be designed to makeand break at zero current. Regardless of the design, the triac al-ways breaks at zero current.Contact Bounce: Inherent with an EMR - zero for SSR's.RFI: Inherent with EMR's - dependent on SSR design.AFI: ("audio-frequency" interference). Terrible with EMR's, par-ticularly when many relays are clacking about. Not noticeablewith SSR's.Environment: High humidity, corrosion, and explosive atmos-pheres usually dictates a sealed relay. SSR's may easily be polled.Shock: The SSR is far supelior.Input Logic: EMR's can be operated from low-level logic. SSR'sare design dependent, but offer complete versatility.

A simple triac control circuit, an ON/OFF circuit, is shown inFig.4. With switch S I open, the triac is off and essentially zero cur-rent is applied to the load. Actually, there will be leakage-currentflow to the load; the amount of current is dependent on the appliedvoltage and triac case temperature. However, because the current isvery small (less than one milliampere) compared to'the load current,it can be neglected in this and the following circuits. (In specificapplications in which leakage current may affect control it wouldhave to be considered.)

. -.----J\ f\ f\ f\LOAD VOLTAGE 1- r V V V

I II II I

TRIAC VOLTAGEI II I

SI S2OPEN CLOSED

To apply power to the load in Fig.4. switch S I is closed to providegate drive to the triac. Bias-resistor R I is of the order of 68 to 100ohms and provides the initial gate drive during every half cycle ofapplied voltage. The power consumption of R I is very low 0/4 to1/2 watt), because, when the triac is in the ON state, R I is in parallelwith the ON-state voltage of approximately 1.5 volts. This methodof triac triggering, calleq anode firing, is an effective way of triggeringbecause it uses the source voltage as a .source of gate-current drive.Maximum gate current is available for triac turn-on at peak line volt-age until the device goes to the low-impedance state. In this statethe current in R I is reduced by the forward voltage drop. In effect,bias resistor R 1 is utilized only during the initial turn-on of the triac,or for approximately two microseconds. In a typical application,switch S I would be replaced by a relay, and power control would betransferred by means of low-level-current relay contacts.

For control applications which require that variable power be de-livered to a load, an inexpensive RC phase-control circuit is best.Fig.S shows the basic triac-diac control circuit with the triac con-nected in series with the load. During the beginning of each half cycle

the triac is in the OFF state; as a result. the entire line voltage is im-pressed across it. Because the triac is in parallel with the potenti-ometer and capacitor, the voltage across the triac drives the currentthrough the potentiometer and charges the capacitor. When thecapacitor voltage reaches the breakover voltage of the diac, VSO,the capacitor discharges through the triac gate and turns it on. Theline voltage is then transferred from the triac to the load for the re-mainder df that half cycle. This sequence is repeated for every halfcycle of either polarity. If the potentiometer resistance is reduced,the capacitor charges more rapidly. the VBO of tile diac is reachedearlier in the cycle, and the power applied to the load is increased.If the potentiometer resistance is increased, triggering occurs laterand load power is reduced. The main disadvantage of this circuit isthat it produces RFI.

Although the basic light-control circuit opcrall'S with the com-ponent arrangement shown in Fig.5. additional components andsections are usually added to reducl' hysteresis effects. extend theeffective range of power control. and suppress radio-frequencyinterference.

A zero-voltage-switch. Fig.6. synchronized for line-pulse genera-tion, in combination with a triac. is particularly wdl suited for tem-perature-control applications. The zero-voltage-switch/triac circuit

may be used with an ON/OFF-type control or as a proportional con-trol depending on the degree of regulation required. A simple, inex-pensive, ON/OFF temperature controller is shown in Fig.7; a reviewof the functional block diagram of the zero-voltage-switch, Fig.6, willhelp in understanding the circuit. For every zero-voltage crossing,a zero crossing pulse is generated and directed to the triac gating cir-cuit. If there is a demand for heat, the differential amplifier is in theopen state, the triac gating circuit is open, and the triac is turned onat every zero-voltage crossing. When the demand for heat is satis-fied, the differential amplifier is in the closed state; this inhibits thetriac gating circuit and removes any further gate drive to the triac.Therefore, the key to the operation of this circuit is in the state ofthe differential amplifier. One side of the differential amplifier isbiased to a reference voltage VR, and the other side is biased to avoltage Vs which is dependent on a variable potentiometer settingand sensing resistor. As a result, whenever the bias voltage VS ex·ceeds the reference voltage VR, the gating circuit is open and thetriac is turned on for each zero-voltage crossing. The charac-teristics of an ON/OFF controller are well known; i.e., there are sig-nificant thermal overshoots and undershoots which result in a dif ..

ferentiJI temperature above and below the reference temperature.The magnitude of the differential temperature is dependent on themass of the heater and the time constant of the sensing element.

For precise temperature control, the technique of proportionalcontrol with synchronous switching is introduced. The proportionalcontrol differs from the ON/OFF control in that it allows a specifiedpercentage of power (duty cycle) to be supplied to the load with afinite off time that. in turn, allows the heating element to "catch up"as a result of thermal lag. In effect. this scheme provides "antici-pator control." Again, the key to circuit operation is in the state ofthe differential amplifier.

The design engineer often must provide dc·to-ac isolation. Com-plete isolation can be achieved by reed relays, pulse transformers, 'andlight-activated devices. Selection of anyone of these three ap-proaches depends on the dc logic design and component economics.Fig.8 (a) shows a reed relay and transistor drive circuit which is ef-fective in triac gating, although it does have moving parts. Fig.8 (b)uses a pulse transformer for isolation, and requires a form of clockpulse that can be transferred to the triac gate. In some applications,clock pulses may already be available; therefore the pulse-transformerapproach is economical. This approach requires more componentsthan that of Fig.8 (a), but it has no moving parts. The last approach,

and, at present, probably the most expensive one, uses a light-activated device, such as the GaAs infrared (lR) emitter, to initiatetriac gating. The light-activated device is coupled to a photosensitivetransistor which, when turned on, provides inhibit logic for addi-tional integrated circuits or, as in Fig. 8 (c), for a zero-voltage-switch application.

ations, but most of all the advantages, of triacs, will have at his dis-posal a device that he can use to design power controllers that operatesatisfactorily not only in normal applications, but also in severephysical and electrical environments. The triac has already provento be a true power-semiconductor device, and is widely used in bothcommercial and industrial applications; restrictions on triac use inmilitary applications, particularly in 400-Hz power systems, aregradually being lifted. It is inevitable, then, that the triac will evolveas the basic building block for ac power control in power-controllersystems.

This paper has illuminated some of those areas most misunder-stood or considered as problem areas in the application of triacs. Thedesigner who thoroughly understands the characteristics and limit-

REEDSWITCH

+~\-( II"

OOC05LlDSolid StateDivision

Linear Integrated Circuits

Features and Applications ofRCA Integrated-Circuit Zero-Voltage Switches(CA3058, CA3059, and CA3079)

RCA-CA3058, CA3059 and CA3079 zero-voltage switchesare monolithic integrated circuits designed primarily for use astrigger circuits for thyristors in many highly diverse acpower-control and power-switching applications. Theseintegrated-circuit switches operate from an ac input voltage of24, 120,208 to 230, or 277 volts at 50,60, or 400 Hz.

The CA3059 and CA3079 are supplied in a 14·terminaldual-in-line plastic package. The CA3058 is supplied in a14-terminal dual-in-line ceramic package. The electrical andphysical characteristics of each type are detailed in RCA DataBulletin File No. 490.

RCA zero-voltage switches (ZVS) are particularly wellsuited for use as thyristor trigger circuits. These switchestrigger the thyristors at zero-voltage points in thesupply-voltage cycle. Consequently, transient load-currentsurges and radio-frequency interference (RFI) are substantiallyreduced. In addition, use of the zero-voltage switches alsoreduces the rate of change of on-state current (di/dt) in thethyristor being triggered, an important consideration in theoperation of thyristors. These switches can be adapted for usein a variety of control functions by use of an internaldifferential comparator to detect the difference between twoexternally developed voltages. In addition, the availability ofnumerous terminal connections to internal circuit pointsgreatly increases circuit flexibility and further expands thetypes of ac power-control applications to which theseintegrated circuits may be adapted. The excellent versatility ofthe zero-voltage switches is demonstrated by the fact thatthese circuits have been used to prOVide transient-freetemperature control in self-cleaning ovens, to controlgun.muzzle temperature in low-temperature environments, toprOVide sequential switching of heating elements in warm-airfurnaces, to switch traffic signal lights at street intersections,and to effect other widely different ac power·controlfunctions.

RCA zero-voltage switches are multistage circuits thatemploy a diode limiter, a zero-crossing (threshold) detector, an

on-off sensing amplifier (differential comparator), and aDarlington output driver (thyristor gating circuit) to providethe basic switching action. The dc operating voltages for thesestages is provided by an internal power supply that hassufficient current capability to drive external circuit elements,such as transistors and other integrated circuits. An importantfeature of the zero-voltage switches is that the output triggerpulses can be applied directly to the gate of a triac or a siliconcontrolled rectifier (SCR). The CA3058 and CA3059 alsofeature an interlock (protection) circuit that inhibits theapplication of these pulses to the thyristor in the event thatthe external sensor should be inadvertently opened or shorted.An external inhibit connection (terminal No. I) is alsoavailable so that an external signal can be used to inhibit theoutput drive. This feature is not included in the CA3079;otherwise, the three integrated·circuit zero-voltage switches areelectrically identical.

Over-all Circuit OperationFig. I shows the functional interrelation of the zero-voltage

switch, the external sensor, th~ thyristor being triggered, andthe load elements in an on-off type of ac power-controlsystem. As shown, each of the zero-voltage switchesincorporates four functional blocks as follows:

(I) Limiter-Power Supply - Permits operation directlyfrom an ac line.

(2) Differential On/Off Sensing Amplifier - Tests thecondition of external sensors or command signals. Hysteresisor proportional-control capability may easily be implementedin this section.

(3) Zero-Crossing Detector - Synchronizes the outputpulses of the circuit at the time when the ac cycle is at azero-voltage point and thereby eliminates radio-frequencyinteference (RFI) when used with resistive loads.

(4) Triac Gating Circuit - Provides high-current pulses tothe gate of the power-controlling thyristor.In addition, the CA3058 and CA3059 prOVide the followingimportant aUXiliary functions (shown in Fig. I):

(I) A built-in protection circuit that may be actuated toremove drive from the triac if the sensor opens or shorts.

AC Input Voltag:' Input Series Dissipation Rating(50/60 or 400 Hzl Resistor (RS) for RS

V AC krl W

24 2 0.5120 10 2208/230 20 4277 25 5

overriding the action of the zero-crossing detector. 1hIS

override is accomplished by connecting terminal 12 toterminal 7. Gate current to the thyristor is continuous whenterminal 13 is positive with respect to terminal 9.

Fig. 2 shows the detailed circuit diagram for theintegrated-circuit zero-voltage switches. (The diagrams shownin Figs. I and 2 are representative of all three RCAzero-voltage switches, i.e., the CA3058, CA3059, and CA3079;the shaded areas indicate the circuitry that is not included inthe CA3079.)

The limiter stage of the zero-voltage switch clips theincoming ac line voltage to approximately ±8 volts. This signalis then applied to the zero-voltage-cro-ssing detector, whichgenerates an output pulse each time the line voltage passesthrough zero. The limiter output is also applied to a rectifyingdiode and an external capacitor, CF, that comprise the dcpower supply. The power supply prOVides approximately6 volts as the VCC supply to the other stages of thezero-voltage switch. The on-off sensing amplifier is basically adifferential comparator. The thyristor gating circuit contains adriver for direct triac triggering. The gating circuit is enabledwhen all the inputs are at a "high" voltage, i.e., the line voltagemust be approximately zero volts, the sensing-amplifier outputmust be "high," the external voltage to terminal J must be alogical "0", and, for the CA3058 and CA3059, the output ofthe fail-safe circuit must be "high." Under these conditions,the thyristor (triac or SCR) is triggered when the line voltage isessentially zero volts.

,I ReA (A3059L __ I~EGRAT!D~C~T _

ALL RESISTANCE VALUES ARE IN OHMS f AII~p~~fE

NOTE: CIRCUITRY,WITHIN SHADED AREAS,NOT INCLUDED IN CA3079

Ale: INTERNAL CONNECTION -- 00 NOT USE {TERMINALRESTRICTION APPLIES ONLY TO CA3079J

Ie" I FOR DC MODEOR400-Hzr----'R;"""- : OPERATION

I 'K iL 2 ,I --------- --I 07 PI3

II 0,

II

I 0,

I

II

II

III

Thyristor Triggering CircuitsThe diodes 0 I and 02 in Fig. 2 form a symmetrical clamp

that limits the voltages on the chip to ±8 volts; the diodes 07and 013 form a half-wave rectifier that develops a positivevoltage on the external storage capacitor, CF.

The output pulses used to trigger the power-switchingthyristor are actually developed by the zero-crossing detectorand the thyristor gating circuit. The zero-crossing detectorconsists of diodes 03 through 06, transistor QI, and theassociated resistors shown in Fig. 2. Transistors QI and Q6through Q9 and the associated resistors comprise the thyristorgating circuit and output driver. These circuits generate theoutput pulses when the ac input is at a zero-voltage point sothat RFI is virtually eliminated when the zero-voltage switchand thyristor are used with resistive loads.

The operation of the zero-crossing detector and thyristorgating circuit can be explained more easily if the on state (i.e.,the operating state in which current is being delivered to thethyristor gate through terminal 4) is considered as theoperating condition of the gating circuit. Other circuitelements in the zero-voltage switch inhibit the gating circuitunless certain conditions are met, as explained later.

In the on state of the thyristor gating circuit, transistors Qsand Q9 are conducting, transistor Q7 is off, and transistor Q6is on. Any action that turns on transistor Q7 removes the drivefrom transistor Qs and thereby turns off the thyristor.Transistor Q7 may be turned on directly by application of aminimum of ±1.2 volts at 10 microamperes to theexternal-inhibit input, terminal I. (If a voltage of more than1.5 volts is available, an external resistance must be added inseries with terminal I to limit the current to I milliampere.)Diode 010 isolates the base of transistor Q7 from other signalswhen an external-inhibit signal is applied so that this signal isthe highest priority command for normal operation. (Althoughgrounding of terminal6 creates a higher-priority inhibitfunction, this level is not compatible with normal OTL or TTLlogic levels.) Transistor Q7 may also be activated by turningoff transistor Q6 to allow current flow from the power supplythrough resistor R7 and diode 010 into the base of Q7·Transistor Q6 is normally maintained in conduction by currentthat flows into its base through resistor R2 and diodes Os and09 when transistor Q I is off.

Transistor Q I is a portion of the zero-crossing detector.When the voltage at terminal 5 is greater than +3 volts, currentcan flow through resistor R I, diode 06, the base-to-emitterjunction of transistor QI, and diode 04 to terminal 7 to turnon QI. This action inhibits the delivery of a gate-drive outputsignal at terminal 4. For negative voltages at terminal 5 thathave magnitudes greater than 3 volts, the current flowsthrough diode Os, the emitter-to-base junction of transistorQI, diode 03, and resistor R1, and again turns on transistorQI. Transistor QI is off only when the voltage at terminal 5 isless than the threshold voltage of approximately ±2 volts.When the integrated-circuit zero-voltage switch is connected as

• The latching cunent is the minimum current required to sustainconduction immediately after the thyristor is switched from the offto the on state and the gate signal is removed.

shown in Fig. I, therefore, the output is a narrow pulse whichis approximately centered about the zero-voltage time in thecycle, as shown in Fig. 3. In some applications, however,

particularly those that use either slightly inductive orlow-power loads, the thyristor load current does not reach thelatching-current value* by the end of this pulse. An externalcapacitor Cx connected between terminal 5 and 7, as shown inFig. 4, can be used to delay the pulse to accommodate suchloads. The amount of pulse stretching and delay is shown inFigs. 5(a) and 5(b).

Continuous gate current can be obtained if terminal 12 isconnected to terminal 7 to disable the zero-crossing detector.In this mode, transistor Q1 is always off. This mode ofoperation is useful when comparator operation is desired orwhen inductive loads must be switched. (If the capacitance inthe load circuit is low, most RFI is eliminated.) Care must betaken to avoid overloading of the internal power supply in thismode. A sensitive-gate thyristor should be used, and·a resistorshould be placed between terminal 4 and the gate of thethyristor to limit the current, as pointed out later underSpecial Application Considerations.

Fig. 6 indicates the timing relationship between the linevoltage and the zero-voltageswitch output pulses. At 60 Hz,the pulse is typically lOa microseconds wide; at 400 Hz, thepulse width is typically 12 microseconds. In the basic circuitshown, when the de logic signal is "high", the output isdisabled; when it is "low", the gate pulses are enabled.

120 V RMS, 60-Hz OPERATION

I

(POSI"'~E d'l/d,lIp

/"I'N(NEG~""'E d~/d'~ -/ --

V ....-

• 300..I

zoS200w'"-'"0-

W

~ 100

~f'

001 0.02 0.03 004 005 006 007 008 009

EXTERNAL CAPACITANCE -I£F

(a)

Fig. ,5 - Curves showing effect of external capacitance on (a) the totaloutput-pulse duration, and (b) the time from zero crossing tothe end of the pulse.

On-Off Sensing AmplifierThe discussion thus far has considered only cases in which

pulses are present all the time or not at all. The differentialsense amplifier consisting of transistors Q2, Q3, Q4, and Qs(shown in Fig. 2) makes the zero-voltage switch a flexiblepower-control circuit. The transistor pairs Q2-Q4 and Q3-QSform a high-beta composite p-n-p transistors in which theemitters of transistors Q4 and Qs act as the collectors of thecomposite devices. These two composite transistors areconnected as a differential amplifier with resistor R3 acting asa constant-current source. The relative current flow in the two"collectors" is a function of the difference in voltage betweenthe bases of transistors Q2 and Q3. Therefore, whenterminal 13 is more positive than terminal 9, little or nocurrent flows in the "collector" of the transistor pair Q2-Q4.When terminal 13 is negative with respect to terminal 9, mostof the current flows through that path, and none in terminal 8.When current flows in the transistor pair Q2-Q4, the path isfrom the supply through R3, through the transistor pairQ2 -Q4, through the base-emitter junction of transistor QI , andfinally through the diode D4 to terminal 7. Therefore, whenVI3 is equal to or more negative than V9, transistor QI is on,and the output is inhibited.

In the circuit shown in Fig. I, the voltage at terminal 9 isderived from the supply by connection of terminals 10 and IIto form a precision voltage divider. This divider forms one sideof a transducer bridge, and the potentiometer Rp and thenegative-tern perature-coefficient (NTC) sensor form the otherside. At low temperatures, the high resistance of the sensorcauses terminal 13 to be positive with respect to terminal 9 sothat the thyristor fires on every half-cycle, and power isapplied to the load. As the temperature increases, the sensorresistance decreases until a balance is reached, and V13approaches V 9. At this point, the transistor pair Q2 -Q4 turnson and inhibits any further pulses. The controlled temperatureis adjusted by variation of the value of the potentiometer Rp.

For cooling service, either the positions of Rp and the sensormay be reversed or terminals 9 and 13 may be interchanged.

LINEA-T-f\IIOLTAGf~: V': \

I I I II I I •I I I •I 1 I I

: : : :.' ," ,: : ' :

rn

The low bias current of the sensing amplifier permitsoperation with sensor impedances of up to 0.1 megohm atbalance without introduction of substantial error (i.e., greaterthan 5 per cent). The error may be reduced if the internalbridge elements, resistors ~ and RS, are not used, but arereplaced with resistances which equal the sensor impedance.The minimum value of sensor impedance is restricted by thecurrellt drain on the internal power supply. Operation of thezero-voltage switch with low-impedance sensors is discussedlater under Special Application Considerations. The voltageapplied to terminal 13 must be greater than 1.8 volts at alltimes to assure proper operation.

Protection CircuitA special feature of the CA3058 and CA3059 zero-voltage

switches is the inclusion of an interlock type of circuit. Thiscircuit removes power from the load by interrupting thethyristor gate drive if the sensor either shorts or opens.However, use of this circuit places certain constraints upon theuser. Specifically, effective protection-circuit operation isdependent upon the following conditions:

(I) The circuit configuration of Fig. I is used, with aninternal supply, no external load on the supply, andterminal 14 connected to terminal 13.

(2) The value of potentiometer Rp and of the sensorresistance must be between 2000 ohms and 0.1 megohm.

(3) The ratio of sensor resistance and Rp must be greaterthan 0.33 and less than 3.0 for all normal conditions. (If eitherof these ratios is not met with an unmodified sensor, a seriesresistor or a shunt resistor must be added to avoid undesiredactivation of the circuit.)

The protective feature may be applied to other systemswhen operation of the circuit is understood. The protectioncircuit consists of diodes D12 and D 15 and transistor Q 1o·Diode D12 activates the protection circuit if the sensor shownin Fig. I shorts or its resistance drops too low in value, asfollows: Transistor Q6 is on during an output pulse so that thejunction of diodes Ds and D12 is 3 diode drops(approximately 2 volts) above terminal 7. As long as V14 ismore positive or only 0.15 volt negative with respect to thatpoint, diode D12 does not conduct, and the circuit operatesnormally. If the voltage at terminal 14 drops to I volt, theanode of diode DS can have a potential of only 1.6 to1.7 volts, and current does not flow through diodes DS and D9and transistor Q6' The thyristor then turns off.

The actual threshold is approximately 1.2 volts at roomtemperature, but decreases 4 millivolts per degree C at highertemperatures. As the sensor resistance increases, the voltage atterminal 14 rises toward the supply voltage. At a voltage ofapproXimately 6 volts, the zener diode D 15 breaks down andturns on transistor Q10, which then turns off transistor Q6and the thyristor. If the supply voltage is not at least 0.2 voltmore positive than the breakdown voltage of diode D15,activation of the protection circuit is not possible. For thisreason, loading the internal supply may cause this circuit tomalfunction, as may selection of the wrong external supplyvoltage. Fig. 7 shows a gUide for the proper operation of theprotection circuit when an external supply is used with atypical integrated-circuit zero-voltage switch.

SPECIAL APPLICATION CONSIDERATIONS

As pointed out previously, the RCA integrated-circuitzero-voltage switches (CA3058, CA3059, and CA3079) areexceptionally versatile units that can be adapted for use in awide-variety of power-control applications. Full advantage ofthis versatility can be realized, however, only if the user has abasic understanding of several fundamental considerations thatapply to certain types of applications of the zero-voltageswitches.

Operating-Power OptionsPower to the zero-voltage switch may be derived directly

from the ac line, as shown in Fig. I, or from an external dcpower supply connected between terminals 2 and 7, as shownin Fig. 8. When the zero-voltage switch is operated directlyfrom the ac line, a dropping resistor RS of 5,000 to10,000 ohms must be connected in series with terminal 5 tolimit the current in the switch circuit. The optimum value forthis resistor is a function of the average current drawn fromthe internal dc power supply, either by external circuitelements or by the thyristor trigger circuits, as shown in Fig. 9.The chart shown in Fig. I indicates the value and dissipationrating of the resistor RS for ac line voltages of 24, 120,208 to230, and 277 volts.

> 6I

~ 5.5g~~ 5

~g 4.5

Half-Cycling EffectThe method by which the zero-voltage switch senses the

zero crossing of the ac power results in a half-cyclingphenomenon at the control point. Fig. 10 illustrates thisphenomenon. The zero-voltage switch senses the zero-voltagecrossing every half-cycle, and an output, for example pulseNo.4, is produced to indicate the zero crossing. During theremaining 8.3 milliseconds, however, the differential amplifierin the zero-voltage switch may change state and inhibit anyfurther output pulses. The uncertainity region of thedifferential amplifier, therefore, prevents pulse No.5 fromtriggering the triac during the negative excursion of the ac linevoltage.

--la.3m,!..I I

I,2

~ {~I-ms,-J,1

When a sensor with low sensitivity is used in the circuit, thezero-voltage switch is very likely to operate in the linear mode.In this mode, the output trigger current may be sufficient totrigger the triac on the positive-going cycle, but insufficient totrigger the device on the negative-going cycle of the triacsupply voltage. This effect introduces a half-cyclingphenomenon, i.e., the triac is turned on during the positivehalf-cycle and turned off during the negative half-cycle.

Fig. II illustrates thisthe figure lists theand Rz for different

around the differential amplifier.technique. The tabular data inrecommended values of resistors R I

sensor impedances at the control point.

THERMISTOR _ NTC R. Rz51( 12K 12K

" ,

If a significant amount (greater than ±IO%) of controlledhysteresis is required, then the circuit shown in Fig. 12 may beemployed. In this configuration, external transistor QI can beused to prOVidean auxiliary limed-delay function.

120 \lAC601'11cs"• T[Mf

T""'o'.rc

T..,C"",,,STOR:f/

For applications that require complete elimination ofhalf-cycling without the addition of hysteresis, the circuitshown in Fig. 13 may be employed. This circuit uses a

SENSITIVITY: CIRCUIT CHANGES STATE WHEN THEREIS A CHANGE OF~ InIN A 5Kn SENSOR

POSITIVESUPPLY VOLTAGEFOR BIASSYSTEM (Vb I

9

II

L -----J IL __C~A~ __ ~

CA3099E integrated-circuit programmable comparator with azero-volta~e switch. A block dia~ram of CA3099E is shown inFig. 14. Because the CA3099E contains an integral flip-flop,its output will be in either a "0" or "I" state. Consequentlythe zero-voltage switch cannot operate in the linear mode, andspurious half-cycling operation is prevented. When thesignal-input voltage at terminal 14 of the CA3099E is equal toor less than the "low" reference voltage (LR), current flowsfrom the power supply through resistor R 1, and a logic "0" isapplied to terminal 13 of the zero-voltage switch. Thiscondition turns off the triac. The triac remains off until thesignal-input voltage rises to or exceeds the "high" referencevoltage (HR), thereby effecting a change in the state of theflip-flop so that a logic "I" is applied to terminal 13 of thezero-voltage switch, and triggers the triac on.

"Proportional Control" SystemsThe on-off nature of the control shown in Fig. I causes

some overshoot that leads to a definite steady-state error. Theaddition of hysteresis adds further to this error factor.However, the connections shown in Fig. 15(a) can be used toadd proportional control to the system. In this circuit, thesense amplifier is connected as a free-running multivibrator. Atbalance, the voltage at terminal 13 is much less than thevoltage at terminal 9. The output will be inhibited at all timesuntil the voltage at terminal 13 rises to the design differentialvoltage between terminals 13 and 9; then proportional controlresumes. The voltage at terminal 13 is as shown in Fig. 15(b).When this voltage is more positive than the threshold, power is

INTERNAL5~us~~~i....(ISlAS)

OUTPUTCURRENTCONTROL

7

3• SINK"

OUTPUT

5 6UNREGULATED REGULATED V-

INPUT OUTPUT

Fig. 15 - Use of the CA3058 or CA3059 in a typical heating controlwith proportional control: fa) schematic diagram, andfb) waveform of voltageat terminal 13.

applied to the load so that the duty cycle is approximately 50per cent. With a 0.1 megohm sensor and values of Rp =0.1 megohm, R2 = 10,000 ohms, and CEXT = 10 microfarads,a period greater than 3 seconds is achieved. This period shouldbe much shorter than the thermal time constant of the system.A change in the value of any of these elemen ts changes theperiod, as shown in Fig. 16. As the resistance of the sensorchanges, the voltage on terminal 13 moves relative to V9. Acooling sensor moves V13 in a positive direction. The triac ison for a larger portion of the pulse cycle and increases theaverage power to the load.

As in the case of the hysteresis circuitry described earlier,some special applications may require more sophisticatedsystems to achieve either very precise regions of control orvery long periods.

Zero-voltage switching control can be extended toapplications in which it is desirable to have constant control ofthe temperature and a minimization of system hysteresis. Aclosed-loop top-burner control in which the temperature ofthe cooking utensil is sensed and maintained at a particularvalue is a good example of such an application; the circuit forthis control is shown in Fig. 17. In this circuit, a unijunction

oscillator is outboarded from the basic control by means ofthe internal power supply of the zero-voltage switch. Theoutput of this ramp generator is applied to terminal 9 of thezero-voltage switch and establishes a varied reference to thedifferential amplifier. Therefore, gate pulses are applied to thetriac whenever the voltage at terminal 13 is greater than thevoltage at terminal 9. A varying duty cycle is established inwhich the load is predominantly on with a cold sensor andpredominantly off with a hot sensor. For precise temperatureregulation, the time base of the ramp should be shorter thanthe thermal time constant of the system but longer than theperiod of the 60-Hz line. Fig. 18, which contains variouswaveforms for the system of Fig. 17, indicates that a typicalvariance of ±O.SoC might be expected at the sensor contact tothe utensil. Overshoot of the set temperature is minimizedwith this approach, and scorching of any type is minimized.

VLOADI~OV

GO-Hz

Effect of Thyristor Load CharacteristicsThe zero-voltage switch is designed primarily to gate a

thyristor that switches a resistive load. Because the outputpulse supplied by the switch is of short duration, the latchingcurrent of the triac becomes a significant factor in determiningwhether other types of loads can be switched. (Thelatching-current value determines whether the triac will remainin conduction after the gate pulse is removed.) Provisions areincluded in the zero-voltage switch to accommodate inductiveloads and low-power loads. For example, for loads that are lessthan approximately 4 amperes rms or that are slightlyinductive, it is possible to retard the output pulse with respectto the zero-voltage crossing by insertion of the capacitor Cxfrom terminal 5 to terminal 7. The insertion of capacitor Cxpermits switching of triac loads that have a slight inductivecomponent and that are greater than approximately 200 watts(for operation from an ac line voltage of 120 volts rms).However, for loads less than 200 watts (for example,70 watts), it is recommended that the user employ theT2300B* sensitive-gate triac with the zero-voltage switchbecause of the low latching-current requirement of this triac.

For loads that have a low power factor, such as a solenoidvalve, the user may operate the zero-voltage switch in the dcmode. In this mode, terminal 12 is connected to terminal 7,and the zero-crossing detector is inhibited. Whether a "high"or "low" voltage is produced at terminal 4 is then dependentonly upon the state of the differential comparator within theintegrated-circuit zero-voltage switch, and not upon the zerocrossing of the incoming line voltage. Of course, in this modeof operation, the zero-voltage switch no longer operates as azero-voltage switch. However, for many applications thatinvolve the switching of low-current inductive loads, theamount of RFI generated can frequently be tolerated.

For switching of high-current inductive loads, which mustbe turned on at zero line current, the triggering techniqueemployed in the dual-output over-under temperaturecontroller and the transient-free switch controller describedsubsequently in this Note is recommended.

Switching of Inductive LoadsFor proper driving of a thyristor in full-cycle operation,

gate drive must be applied soon after the voltage across thedevice reverses. When resistive loads are used, this reversaloccurs as the line voltage reverses. With loads of other powerfactors, however, it occurs as the current through the loadbecomes zero and reverses.

There are several methods for sWitching an inductive load atthe proper time. If the power factor of the load is high (i.e., ifthe load is only slightly inductive), the pulse may be delayedby addition of a suitable capacitor between terminals 5 and 7,as described previously. For highly inductive loads, however,this method is not suitable, and different techniques must beused.

If gate current is continuous, the triac automaticallycommutates because drive is always present .vhen the voltagereverses. This mode is established by connection of terminals 7and 12. The zero-crossing detector is then disabled so thatcurrent is supplied to the triac gate whenever called for by the

';.":."-

sensing amplifier. Although the RFI-eliminating function ofthe zero-voltage switch is inhibited when the zero-crossingdetector is disabled, there is no problem if the load is highlyinductive because the current in the load cannot changeabruptly.

Circuits that use a sensitive-gate triac to shift the firingpoint of the power triac by approximately 90 degrees havebeen designed. If the primary load is inductive, this phase shiftcorresponds to firing at zero current in the load. However,changes in the power factor of the load or tolerances ofcomponents will cause errors in this firing time.

The circuit shown in Fig. 19 uses a CA3086integrated-circuit transistor array to detect the absence of loadcurrent by sensing the voltage across the triac. The internalzero-crossing detector is disabled by connection of terminal 12to terminal 7, and control of the output is made through theexternal inhibit input, terminal I. The circuit permits anoutput only when the voltage at point A exceeds two VBEdrops, or 1.3 volts. When A is positive, transistors Q3 and Q4conduct and reduce the voltage at terminal I below the inhibitstate. When A is negative, transistors Q t and Q2 conduct.When the voltage at point A is less than ±1.3 volts, neither ofthe transistor pairs conducts; terminal I is then pulled positiveby the current in resistor R3, and the output in inhibited.

The circuit shown in Fig. 19 forms a pulse of gate currentand can supply high peak drive to power traics with lowaverage current drain on the internal supply. The gate pulsewill always last just long enough to latch the thyristor so that

disabled and initial turn-on occurs at random.The gate pulse forms because the voltage at point A when

the thyristor is on is less than l.3 volts: therefore, the outputof the zero-voltage switch is inhibited, as described above. Theresistor divider R) and Rz should be selected to assure thiscondition. When the triac is on, the voltage at point A isapproximately one-third of the instantaneous on-state voltage(vr) of the thyristor. For most RCA thyristors, vr (max) isless than 2 volts, and the divider shown is a conservative one.When the load current passes through zero, the triaccommutates and turns off. Because the circuit is still beingdriven by the line voltage, the current in the load attempts toreverse, and voltage increases rapidly across the "turned-off'triac. When this voltage exceeds 4 volts, one portion of theCA3086 conducts and removes the inhibit signal to permitapplication of gate drive. Turning the triac on causes the

Fig. 20 - Use of rhe CA3058 or CA3059 to provide negative gatepulses: (a) schematic diagram; (b) peak gate current (atterminal 3) as a function of gate voltage.

Provision of Negative Gate CurrentTriacs trigger with optimum sensitivity when the polarity of

the gate voltage and the voltage at the main terminal 2 aresimilar (1+ and n- modes). Sensitivity is degraded when thepolarities are opposite (1- and JII+ modes). Although RCAtriacs are designed and specified to have the same sensitivity inboth rand 111+ modes, some other types have very poorsensitivity in the JII+ condition. Because the zero-voltageswitch supplies positive gate pulses, it may not directly drivesome higher-current triacs of these other types.

The circuit shown in Fig.20(a) uses the negative-goingvoltage at terminal 3 of the zero-voltage switch to supply anegative gate pulse through a capacitor. The curve inFig. 20(b) shows the approximate peak gate current as afunction of gate voltage VG. Pulse width is approximately80 microseconds.Operation with Low-Impedance Sensors

Although the zero-voltage switch can operate satisfactorilywith a wide range of sensors, sensitivity is reduced whensensors with impedances greater than 20,000 ohms are used.Typical sensitivity is one per cent for a SOOO-ohmsensor andincreases to three per cent for a O.l-megohm sensor.

Low-impedance sensors present a different problem. Thesensor bridge is connected across the internal power supplyand causes a current drain. A SOOO-ohm sensor with itsassociated SOOO-ohm series resistor draws less thanI milliampere. On the other hand, a 300-ohm sensor draws acurrent of 8 to 10 milliampers from the power supply.

Fig. 21 shows the 600-ohm load line of a 300-ohm sensoron a redrawn power-supply regulation curve for thezero-voltage switch. When a IO,OOO-ohmseries resistor is used,the voltage across the circuit is less than 3 volts and bothsensitivity and output current are significantly reduced. Whena SOOO-ohmseries resistor is used, the supply voltage is nearlyS volts, and operation is approximately normal. For moreconsistent operation, however, a 4000-ohm series resistor isrecommended.

Fig. 21 - Power·supply regulation of the CA3058 or CA3059 with a300-ohm sensor (600-ohm load) for two values of seriesresistor.

Although positive-temperature-coefficient (PTC) sensorsrated at 5 kilohms are available, the existing sensors in ovensare usually of a much lower value. The circuit shown in Fig. 22is offered to accommodate these inexpensive metal-wound

sensors. A schematic diagram of the RCA CA3080integrated-circuit operational transconductance amplifier usedin Fig. 22, is shown in Fig. 23. With an amplifier bias current,IABe, of 100 microamperes, a forward transconductance of2 milliohms is achieved in this configuration. The CA3080switches when the voltage at terminal 2 exceeds the voltage atterminal 3. This action allows the sink current, Is, to flowfrom terminal 13 of the zero-voltage switch (the inputimpedance to terminal 13 of the zero-voltage switch isapproximately 50 kilohms); gate pulses are no longer appliedto the triac because Q2 of the zero-voltage switch is on. Hence,if the PTC sensor is cold, i.e., in the low resistance state, theload is energized. When the temperature of the PTC sensorincreases to the desired temperature, the sensor enters the highresistance state, the voltage on terminal 2 becomes greaterthan that on terminal 3, and the triac switches the load off.

Further cycling depends on the voltage across the sensor.Hence, very low values of sensor and potentiometer resistancecan be used in conjunction with the zero-voltage switch powersupply without causing adverse loading effects and impairingsystem performance.

Interfacing TechniquesFig. 24 shows a system diagram that illustrates the role of

the zero-voltage switch and thyristor as an interface betweenthe logic circuitry and the load. There are several basic

lOADSAND

MECHANISMS

~MOTORS--+-

SOLENOIDS

IJlII~HEATERS

~LAMPS

SENSORSIIo---@--

PHOTO-CELLS

~PTCI NTC

, THERMISTORS----LIMIT SWITCHES

interfacing techniques. Fig.25(a) shows the direct inputtechnique. When the logic output transistor is switched fromthe on state (saturated) to the off state, the load will beturned on at the next zero-voltage crossing by means of theinterfacing zero-voltage switch and the triac. When the logicoutput transistor is switched back to the on state,zero-crossing pulses from the zero-voltage switch to the triac

gate will immediately cease. Therefore, the load will be turnedoff when the triac commutates off as the sine-wave loadcurrent goes through zero. In this manner, both the turn-onand turn-off conditions for the load are controlled.

When electrical isolation between the logic circuit and theload is necessary, the isolated-input technique shown inFig. 25(b) is used. In the technique shown, optical coupling isused to achieve the necessary isolation. The logic outputtransistor switches the light-source portion of the isolator. Thelight-sensor portion changes from a high impedance to a lowimpedance when the logic output transistor is switched from

1125.2

VAC

T2 KNIGHT54E -1421(OR EQUIV)

off to on. The light sensor is connected to the differentialamplifier input of the zero-voltage switch, which senses thechange of impedance at a threshold level and switches the loadon as in Fig. 25(a).

Sensor IsolationIn many applications, electrical isolation of the sensor from

the ac input line is desirable. Two common isolationtechniq1!es are shown in Fig. 26.

Transformer Isolation - In Fig. 26(a), a pulse transformeris used to provide electrical isolation of the sensor fromincoming ac power lines. The pulse transformer T 1 isolates the

T,PULSE

TRANSFORMER

"

SPRAGUEt1Z12

(OR EOUIV.1

sensor from terminal No. I of the triac Y1, and transformerT2 isolates the CA3058 or CA3059 from the power lines.Capacitor C1 shifts the phase of the output pulse at terminalNo.4 in order to retard the gate pulse delivered to triac Y I tocompensate for the small phase-shift introduced bytransformer T 1.

Photocoupler Isolation - In Fig. 26(b), a photocouplerprovides electrical isolation of the sensor logic from theincoming ac power lines. When a logic "I" is applied at theinput of the photocoupler, the triac controlling the load willbe turned on whenever the line voltage passes through zero.When a logic "0" is applied to the photocoupler, the triac willturn off and remain off until a logic" I " appears at the inputof the photocoupler.

TEMPERATURE CONTROLLERSFig. 27 shows a triac used in an on-off

temperature-controller configuration. The triac is turned on atzero voltage whenever the voltage Vs exceeds the reference

voltage Yr' The transfer characteristic of this system, shown inFig. 28(a), indicates significant thermal overshoots andundershoots, a well-known characteristic of such a system. Thedifferential or hysteresis of this system, however, can befurther increased, if desired, by the addition of positivefeedback.

For precise temperature-control applications, theproportional-control technique with synchronous switching isemployed. The transfer curve for this type of controller isshown in Fig. 28(b). In this case, the duty cycle of the powersupplied to the load is varied with the demand for heatreqUired and the thermal time constant (inertia) of the system.For example, when the temperature setting is increased in anon-off type of controller, full power (100 per cent duty cycle)is supplied to the system. This effect results in significanttemperature excursions because there is no anticipatory circuitto reduce the power gradually before the actual settemperature is achieved. However, in a proportional control

technique, less power is supplied to the load (reduced dutycycle) as the error signal is reduced (sensed temperatureapproaches the set temperature).

Before such a system is implemented, a time base is chosenso that the on-time of the triac is varied within this time base.The ratio of the on-to-off time of the triac within this timeinterval depends on the thermal time constant of the systemand the selected temperature setting. Fig. 29 illustrates theprinciple of proportional control. For this operation, power issupplied to the load until the ramp voltage reaches a valuegreater than the dc control signal supplied to the opposite sideof the differential amplifier. The triac then remains off for theremainder of the time-base period. As a result, power is"proportioned" to the load in a direct relation to the heatdemanded by the system.

LEVEL ~ ~<iLEVEL 2 CDZ

LEVEL 3 g*50%

POWER

OUTPUT

75%POWER

OUTPUT

For this application, a simple ramp generator can berealized with a minimum number of active and passivecomponents. A ramp having good linearity is not required forproportional operation because of the nonlinearity of thethermal system and the closed-loop type of control. In thecircuit shown in Fig. 30, the ramp voltage is generated whenthe capacitor C1 charges through resistors RO and R 1. Thetime base of the ramp is determined by resistors R2 and R),capacitor C2, and the breakover voltage of the 03202U* diac.

10JLF50 VDC

C, -

COMMON

PIN CONNECTIONS REFER TOReA CA3058 OR CA3059

When the voltage across C2 reaches approximately 32 volts,the diac switches and turns on the 2N697S transistor andIN914 diodes. The capacitor C1 then discharges through thecollector-to-emitter junction of the transistor. This dischargetime is the retrace or flyback time of the ramp. The circuitshown can generate ramp times ranging from 0.3 to2.0 seconds through adjustment of R2. For precisetemperature regulation, the time base of the ramp should beshorter than the thermal time constant of the system, but longwith respect to the period of the 60-Hz line voltage. Fig. 31shows a triac connected for the proportional mode.

Fig. 32(a) shows a dual-output temperature controller thatdrives two triacs. When the voltage Vs developed across thetemperature-sensing network exceeds the reference voltageVRI, motor No. I turns on. When the voltage across thenetwork drops below the reference voltage VR2, motor No.2turns on. Because the motors are inductive, the currents 1M1

solved by use of the sensitive-gate RCA-40526 triac. The highsensitivity of this device (3 milliamperes maximum) and lowlatching current (approximately 9 milliamperes) permitsynchronous operation of the temperature-controller circuit.In Fig. 32(a), it is apparent that, though the gate pulse Vg oftriac Y1 has elapsed, triac Y2 is switched on by the currentthrough RL I. The low latching current of the RCA-40526triac results in dissipation of only 2 watts in RL I, as opposedto 10 to 20 watts when devices that have high latchingcurrents are used.

Electric-Heat ApplicationFor electric-heating applications, the RCA-2N5444

40-ampere triac and the zero-voltage switch constitute anoptimum pair. Such a combination proVides synchronousswitching and effectively replaces the heavy-duty contactorswhich easily degrade as a result of pitting and wearout fromthe switching transients. The salient features of the 2N544440-ampere triac are as follows:

(I) 300-ampere single-surge capability (for operation at60-Hz),

(2) a typical gate sensitivity of 20 milliamperes in the [(+)and m(+) modes,

(3) low on-state voltage of 1.5 volts maximum at40 amperes, and

(4) available VOROM equal to 600 volts.Fig.33 shows the circuit diagram of a

synchronous-switching heat-staging controller that is used forelectric heating systems. Loads as heavy as 5 kilowatts areswitched sequentially at zero voltage to eliminate RFI andprevent a dip in line voltage that would occur if the full25 kilowatts were to be switched simultaneously.

Transistor Ql and Q4 are used as a constant-current sourceto charge capacitor C in a linear manner. Transistor Q2 acts as abuffer stage. When the thermostat is closed, a ramp voltage isprOVided at output Eo. At approximately 3-second intervals,each 5-kilowatt heating element is switched onto the powersystem by its respective triac. When there is no further demandfor heat, the thermostat opens, and capacitor C dischargesthrough R, and R2 to cause each triac to turn off in thereverse heating sequence. It should be noted that somehalf-cycling occurs before the heating element is switched fullyon. This condition can be attributed to the inherentdissymmetry of the triac and is further aggravated by theslow-rising ramp voltage applied to one of the inputs. Thetiming diagram in Fig.34 shows the turn-on and turn-offsequence of the heating system being controlled.

Seemingly, the basic method shown in Fig. 33 could bemodified to provide proportional control in which the numberof heating elements switched into the system, under any given

thermal load, would be a function of the BTU's required bythe system or the temperature differential between an indoorand outdoor sensor within the total system environment. Thatis, the closing of the thermostat would not switch in all theheating elements within a short time interval, which inevitablyresults in undesired temperature excursions, but would switchin only the number of heating elements reqUired to satisfy theactual heat load.

Oven/Broiler ControlZero-voltage switching is demonstrated in the oven control

circuit shown in Fig.35. In this circuit, a sensor element isincluded in the oven to provide a closed-loop system foraccurate control of the oven temperature.

As shown in Fig. 35, the temperature of the oven can beadjusted by means of potentiometer R I, which acts, togetherwith the sensor, as a voltage divider at terminal 13. The voltage

F, RL, RL2 RL3 RL. RL5

MT2 RCA2N5444

120VAC60Hz MT,

1/16 A

F2

TRANSISTORS Q I .02 AND 04ARE PART OF ReA -CA3096EINTEGRATED-CIRCUIT N-P-N/P-N-PTRANSISTOR ARRAV

THERMOSTAT ~OR MANUAL I

SWITCH IL

at terminal 13 is compared to the fixed bias at terminal9which is set by internal resislors R4 and Rs. When the oven iscold and the resistance of the sensor is high, transistors Q2 andQ4 are off, a pulse of gate current is applied to the triac, andheat is applied to the oven. Conversely, as the desiredtemperature is reached, the bias at terminal 13 turns the triacoff. The closed-loop feature then cycles the oven element onand off to maintain the desired temperature to approximately±2°C of the set value. Also, as has been noted, externalresistors between terminals 13 and 8, and 7 and 8, can be usedto vary this temperature and provide hysteresis. In Fig. II, a

circuit that provides approximately IO-per-cent hysteresis isdemonstrated.

In addition to allowing the selection of a hysteresis value,the flexibility of the control circuit permits incorporation ofother features. A PTC sensor is readily used by interchangingterminals 9 and 13 of the circuit shown in Fig. 35 andsubstituting the PTC for the NTC sensor. In both cases, thesensor element is directly returned to the system ground orcommon, as is often desired. Terminal 9 can be connected byexternal resistors to proVide for a variety of biasing, e.g., tomatch a lower-resistance sensor for which the switching-pointvoltage has been reduced to maintain the same sensor current.

To accommodate the self-cleaning feature, externalswitching, which enables both broiler and oven units to beparalleled, can easily be incorporated in the design. Of course,the potentiometer must be capable of a setting such that thesensor, which must be characterized for the high, self-cleantemperature, can monitor and establish control of thehigh-temperature, self-clean mode. The ease with which thisself-clean mode can be added makes the over-all solid-statesystems cost-competitive with electromechanical systems ofcomparable capability. In addition, the system incorporatessolid-state reliability while being neater, more easily calibrated,and containing less-costly system wiring.Integral-Cycle Temperature Controller (No half-cycling)

If a temperature controller which is completely devoid ofhalf-cycling and hysteresis is required, then the circuit shownin Fig. 36 may be used. This type of circuit is essential forapplications in which half-cycling and the resultant decomponent could cause overheating of a power transformer onthe utility lines.

.012018

Y,ReA "'.-S26000

5KWLOAD

HEATER)AL

* FOR PROPORTIONAL OPERATION OPEN TERMINALS 10,11, AND 13. AND CONNECT POSITIVE RAMP VOLTAGE TO TERMINAL 13

** SELECTED FOR IGT=6 mA MAXIMUM .• FORMERLY ReA 44003• FORMERLY RCA 40655

In the integral-cycle controller, when the temperature beingcontrolled is low, the resistance of the thermistor is high, andan output signal at terminal 4 of zero volts is obtained. TheSCR (Y J), therefore, is turned off. The triac (Y2) is thentriggered directly from the line on positive cycles of the acvoltage. When Y2 is triggered and supplies power to the loadRL, capacitor C is charged to the peak of the input voltage.When the ac line swings negative, capacitor C dischargesthrough the triac gate to trigger the triac on the negativehalf-cycle. The diode-resistor-capacitor "slaving network"triggers the triac on negative half-cycle to provide only integralcycles of ac power to the load.

When the temperature being controlled reaches the desiredvalue, as determined by the thermistor, then a positive voltagelevel appears at terminal 4 of the zero-voltage switch. The SCRthen starts to conduct at the beginning of the positive inputcycle to shunt the trigger current away from the gate of thetriac. The triac is then turned off. The cycle repeats when theSCR is again turned OFF by the zero-voltage switch.

The circuit shown in Fig. 37 is similar to the configurationin Fig. 36 except that the protection circuit incorporated inthe zero-voltage switch can be used. In this new circuit, theNTC sensor is connected between terminals 7 and 13, andtransistor Qo inverts the signal output at terminal 4 to nullifythe phase reversal introduced by the SCR (Y 1)' The internalpower supply of the zero-voltage switch supplies bias currentto transistor Qo'

Of course, the circuit shown in Fig. 37 can readily beconverted to a tme proportional integral-cycle temperaturecontroller simply by connection of a positive-going rampvoltage to terminal9 (with terminals 10 and II open), aspreviously discussed in this Note.

Thermocouple Temperature ControlFig. 38 shows the CA3080A operating as a pre-amplifier for

the zero-voltage switch to form a zero-voltage switching circuitfor use with thermocouple sensors.

Y2 MT22NS444

5K2.2 K

5W5W Y2

I K112W

ReA"'·-c 526000

Ie<¢'J5VDC +

120VAC2N697S60 H,

II K2W

5KWLOAD

(HEATER)RL

O.Sp.F20CV DC

* FOR PROPORTIONAL QPERATIOfll OPEN TERMINALS 9,10 AND II AND CONNECT POSTIVE RAMP VOLTAGE TO TERMINAL 9**SELECTED FOR IGT=6 mA MAXIMUM

-FORMERLY ReA 44003

_FORMERLY RCA 40655

MACHINE CONTROL AND AUTOMATIONThe earlier section on interfacing techniques indicated

several techniques of controlling ac loads through a logicsystem. Many types of automatic equipment are not complexenough or large enough to justify the cost of a flexible logicsystem. A special circuit, designed only to meet the controlrequirements of a particular machine, may prove moreeconomical. For example, consider the simple machine shownin Fig. 39; for each revolution of the motor, the belt isadvanced a prescribed distance, and the strip is then punched.The machine also has variable speed capability.

The typical electromechanical control circuit for such amachine might consist of a mechanical cambank driven by aseparate variable speed motor, a time delay relay, and a fewlogic and power relays. Assuming use of industrial-gradecontrols, the control system could get quite costly and large.Of greater importance is the necessity to eliminate transientsgenerated each time a relay or switch energizes and deenergizesthe solenoid and motor. Fig. 40 shows such transients, whichmight not affect the operation of this machine, but couldaffect the more sensitive solid-state equipment operating in thearea.

A more desirable system would use triacs and zero-voltageswitching to incorporate the following advantages:

a. Increased reliability and long life inherent insolid-state devices as opposed to moving parts andcontacts associated with relays.

Minimized generation of EMI/RFI using zero-voltageswitching techniques in conjunction with thyristors.Elimination of high-voltage transients generated byrelay-contact bounce and contacts breaking inductiveloads, as shown in Fig. 39 ..Compactness of the control system.entire control system could be on one printed-circuitand an over-all cost advantage would be achieved.is a timing diagram for the proposed solid-state

d.The

board,Fig. 41

ZERO-CROSSING

PULSE60 HZ"

machine control, and Fig.42 is the corresponding controlschematic. A variable-speed machine repetition rate pulse is setup using either a unijunction oscillator or a transistor astablemultivibrator in conjunction with a 10-millisecond one-shotmultivibrator. The first zero-voltage switch in Fig. 42 is usedto synchronize the entire system to zero-voltage crossing. Itsoutput is inverted to simplify adaptation to the rest of thecircuit. The center zero-voltage switch is used as an interfacefor the photo-cell, to control one revolution of the motor. Thegate drive to the motor triac is continuous dc, starting at zerovoltage crossing. The motor is initiated when both the machinerate pulse and the zero-voltage sync are at low voltage. Thebottom zero-voltage switch acts as a time-delay for pulsing thesolenoid. The inhibit input, terminal 1, is used to assure thatthe solenoid will not be operated while the motor is running.The time delay can be adjusted by varying the reference level(50K potentiometer) at terminal 13 relative to the capacitorcharging to that level on terminal 9. The capacitor is reset bythe SCR during the motor operation. The gate drive to thesolenoid triac is direct current. Direct current is used to triggerboth the motor and solenoid triacs because it is the mostdesirable means of switching a triac into an inductive load. Theoutput of the zero-voltage switch will be continuous dc byconnecting terminal 12 to common. The output under dcoperation should be limited to 20 milliamperes. The motortriac is synchronized to zero crossing because it is ahigh-crurent inductive load and there is a chance of generatingRFI. The solenoid is a very low current inductive load, sothere would be little chance of generating RFI: therefore, theinitial triac turn-on can be random, which simplifies thecircuitry.

This example shows the versatility and advantages of theRCA zero-voltage switch used in conjunction with triacs asinterfacing and control elements for machine control.

~:~lom'4MACHINEREP RATE

TIME DELAYFUNCTION ORONE-SHOTMULTIV18RATOR

400-Hz TRIAC APPLICATIONSThe increased complexity of aircraft control systems, and

the need for greater reliability than electromechanicalsWitching can offer, has led to the use of solid-state powerswitching in aircraft. Because 400-Hz power is used almostuniversally in aircraft systems, RCA offers a complete line oftriacs rated for 400-Hz applications. Use of the RCAzero-voltage switch in conjunction with these 400-Hz triacsresults in a minimum of RFI, which is especially important inaircraft.

Areas of application for 400-Hz triacs in aircraft include:a. Heater controls for food-warming ovens and for

windshield defrosters.b. Lighting controls for instrument panels and cabin

illuminationc. Motor controlsd. Solenoid controlse. Power-supply switchesLamp dimming is a simple triac application that

demonstrates an advantage of 400-Hz power over 60-Hzpower. Fig.43 shows the adjustment of lamp intensity byphase control of the 60-Hz line voltage. RFI is generated bythe step functions of power each half cycle, requiringextensive filtering. Fig. 44 shows a means of controlling powerto the lamp by the zero-voltage-switching technique. Use of400-Hz power makes possible the elimination of complete orhalf cycles within a period (typically 17.5 milliseconds)

.O-H'~LINEVOLTAGE I - --- -

I 1 I I

I I I I :r---16.67ms~ I I

~::::I

LAMP I • 1 I IOUTPUT I I I

400-HzLINE

VOLTAGE

IL

+-I r-r-------- 175 ms +--IIl!I~a.a.

IPJ r;:r<:r<:J

......j ~ARIABlE 1[REFERENCE IILEVElS ,e. a. .11 a.: a.

-'&':/ W 'I(J '<J

without noticeable flicker. Fourteen different levels of lampintensity can be obtained in this manner. A line-synced ramp isset up with the desired period and applied to terminal No.9 ofthe differential amplifier within the zero-voltage switch, asshown in Fig. 45. The other side of the differential amplifier(terminal No. 13) uses a variable reference level, set by the50K potentiometer. A change of the potentiometer settingchanges the lamp intensity.

In 400-Hz applications it may be necessary to widen andshift the zero-voltage switch output pulse (which is typically12 microseconds wide and centered on zero voltage crossing),to assure that sufficient latching current is available. The 4Kresistor (terminal No. 12 to common) and the0.0 I5-microfarad capacitor (terminal No.5 to common) areused for this adjustment.[fij-

115 V J<F

400H.

SOLID-STATE TRAFFIC FLASHERAnother application which illustrates the versatility of the

zero-voltage switch, when used with RCA thyristors, involvesswitching traffic-control lamps. In this type of application, it isessential that a triac withstand a current surge of the lamp loadon a continuous basis. This surge results from the differencebetween the cold and hot resistance of the tungsten filament.If it is assumed that triac turn-on is at 90 degrees from thezero-voltage crossing, the first current-surge peak isapproximately ten times the peak steady-state value or fifteentimes the steady-state rms value. The second current-surgepeak is approximately four times the steady-state rms value.

Transistors QI and Q2 inhibit these pulses to the gates of thetriacs until the triacs turn on by the logical" I" (Vcc high)state of the flip-flop.

The arrangement described can also be used for asynchronous, sequential traffic·controller system by additionof one triac, one gating transistor, a "divide-by-three" logiccircuit, and modification in the design of the diac pulsegenerator. Such a system can control the familiar red, amber,and green traffic signals that are found at many intersections.

SYNCHRONOUS LIGHT FLASHERFig. 47 shows a simplified version

synchronous-switching traffic light flasher shownof the

in Fig. 46.

When the triac randomly switches the lamp, the rate ofcurrent rise di/dt is limited only by the source inductance. Thetriac di/dt rating may be exceeded in some power systems. Inmany cases, exceeding the rating results in excessive currentconcentrations in a small area of the device which mayproduce a hot spot and lead to device failure. Criticalapplications of this nature require adequate drive to the triacgate for fast turn-on. In this case, some inductance may berequired in the load circuit to reduce the initial magnitude ofthe load current when the triac is passing through the activeregion. Another method may be used which involves theswitching of the triac at zero line voltage. This methodinvolves the supply of pulses to the triac gate only during thepresence of zero voltage on the ac line.

Fig. 46 shows a circuit in which the lamp loads are switchedat zero line voltage. This approach reduces the initial di/dt,decreases the required triac surge-current ratings, increases theoperating lamp life, and eliminates RFI problems. This circuitconsists of two triacs, a flip-flop (FF-!), the zero-voltageswitch, and a diac pulse generator. The flashing rate in thiscircuit is controlled by potentiometer R, which providesbetween 10 and 120 flashes per minute. The state of FF·Idetermines the triggering of triacs Y I or Y2 by the outputpulses at terminal 4 generaled by Ihe zero-crossing circuit.

Flash rale is set by use of the curve shown in Fig. 16. If a moreprecise flash rale is required, the ramp generator describedpreviously may be used. In this circuit, ZVSl is the mastercontrol unit and ZVS2 is slaved to the output of ZVS1through its inhibit terminal (terminal I). When power isapplied to lamp No. I, the voltage of terminal 6 on ZVSI ishigh and ZVS2 is inhibited by the current in Rx. When lamp

No. I is off, ZVS2 is not inhibited, and triac Y2 can fire. Thepower supplies operate in parallel. The on-off sensing amplifierin ZVS2 is not used.

TRANSIENT-FREE SWITCH CONTROLLERSThe zero-voltage switch can be used as a simple solid-state

switching device that permits ac currents to be turned on oroff with a minimum of electrical transients and circuit noise.

The circuit shown in Fig. 48 is connected so that, after thecontrol terminal 14 is opened, the electronic logic waits untilthe power-line voltage reaches a zero crossing before power isapplied to the load ZL. Conversely, when the control terminalsare shorted, the load current continues until it reaches a zerocrossing. This circuit can switch a load at zero current whetherit is resistive or inductive.

The circuit shown in Fig. 49 is connected to provide theopposite control logic to that of the circuit shown in Fig. 48.That is, when the switch is closed, power is supplied to theload, and when the switch is opened, power is removed fromthe load.

In both configurations, the maximum rms load current thatcan be switched depends on the rating of triac Y2. If Y2 is anRCA-2N5444 triac, an rms current of 40 amperes can beswitched.

DIFFERENTIAL COMPARATOR FOR INDUSTRIAL USEDifferential comparators have found widespread use as limit

detectors which compare two analog input signals and providea go/no-go, logic 'one" or logic "zero" output, depending

120VAC60 H,

!

upon the relative magnitudes of these signals. Because thesignals are often at very low voltage levels and very accuratediscrimination is normally required between them, differentialcomparators in many cases employ differential amplifiers as abasic building block. However, in many industrial controlapplications, a high-performance differential comparator is notrequired. That is, high resolution, fast switching speed, andsimilar features are not essential. The zero-voltage switch isideally suited for use in such applications. Connection ofterminal 12 to terminal 7 inhibits the zero-voltage thresholddetector of the zero-voltage switch, and the circuit becomes adifferential comparator.

Fig. 50 shows the circuit arrangement for use of thezero-voltage switch as a differential comparator. In thisapplication, no external dc supply is required, as is the casewith most commercially availabte integrated-circuitcomparators; of course, the output-current capability of thezero-voltage switch is reduced because the circuit is operatingin the dc mode. The 1000-ohm resistor RG, connectedbetween terminal 4 and the gate of the triac, limits the outputcurrent to approximately 3 milliamperes.

When the zero-voltage switch is connected in the dc mode,the drive current for terminal 4 can be determined from acurve of the external load current as a function of dc voltagefrom terminals 2 and 7. This curve is shown in the technicalbulletin for RCA integrated-circuit zero-voltage switches, FileNo. 490. Of course, if additional output current is required, anexternal dc supply may be connected between terminals 2

MTI

'2T230IB·

MT2

O.II'F200

V DC

*IF Y2' FOR EXAMPLE. IS A 4Q·AMPERE TRIAC, THEN RJ MUST BE DECREASED TO SUPPLYSUFFICIENT IGT FOR Y2

• FORMERLY ReA 40691

120VAC60 Hz

I

3JO"~F

200V DC

* IF Y2, FOR EXAMPLE, IS A 40-AMPERE TRIAC, RI MUST BE DECREASED TO SUPPLYSUFFICIENT IGT FOR Y2

• FORMERLY ReA 40691

and 7, and resistor Rx (shown in Fig. 50) may be removed.The chart below compares some of the operating

characteristics of the zero-voltage switch, when used as acomparator, with a typical high-performance commerciallyavailable integrated-circuit differential comparator.

ParametersSensitivity

Zero-VoltageSwitch

(Typical Values)30mV

TypicalIntegrated-CircuitComparator (710)

2 mV

Switching speed(rise time)

Output drivecapability

POWER ONE-SHOT CONTROLFig.51 shows a circuit which triggers a triac for one complete

half-cycle of either the positive or negative alternation of theac line voltage. In this circuit, triggering is initiated by thepush button PB-I, which produces triggering of the triac nearzero voltage even though the button is randomly depressedduring the ac cycle. The triac does not trigger again until thebutton is released and again depressed. This type of logic isrequired for the solenoid drive of electrically operated stapling

ZL

ANY POWERFACTOR

121/3 CD4QQ7A 1/2 CD4QI3A

8

~FF-I

'J~C"'·226}2

guns, impulse hammers, and the like, where load-current flowis required for only one complete half-cycle. Such logic canalso be adapted to keyboard consoles in which contact bounceproduces transmission of erroneous information.

In the circuit of Fig. 51, before the button is depressed,both flip-flop outputs are in the "zero" state. Transistor QG isbiased on by the output of flip-flop FF-I. The differentialcomparator which is part of the zero-voltage switch is initiallybiased to inhibit output pulses. When the push button isdepressed, pulses are generated, but the state of QG

determines the requirement for their supply to the triac gate.The first pulse generated serves as a "framing pulse" and doesnot trigger the triac but toggles FF-I. Transistor QG is thenturned off. The second pulse triggers the triac and FF-! which,ill turn, toggles the second flip-flop FF-2. The output of FF-2turns on transistor Q7, as shown in Fig. 52, which inhibits allfurther output pulses. When the pushbutton is released, thecircuit resets itself until the process is repeated with thebutton. Fig. 53 shows the timing diagram for the describedoperating sequence.

ZEROVOLTAGEDETECTOR

£f.:..!.. PIN 2

0

££-1 PIN I

TRIACINHIBITED

~ PIN 12~

..,1:"-I II TRIAC TURNSI liON, I: I

PHASE CONTROL CIRCUITFig. 54 shows a circuit using a CA3058 or CA3059

zero-voltage switch together with two CA3086integrated-circuit transistor arrays to form a phase-controlcircuit. This circuit is specifically designed for speed control ofac induction motors, but may also be used as a light dimmer.The circuit, which can be operated from a line frequency of50-Hz to 400-Hz, consists of a zero-voltage detector, aline-synchronized ramp generator, a zero-current detector, anda line-derived control circuit (i.e., the zero-voltage switch). Thezero-voltage detector (part of CA3086 No. I) and the rampgenerator (CA3086 No.2) provide a line-synchronizedramp-voltage output to terminal 13 of the zero-voltage switch.The ramp voltage, which has a starting voltage of 1.8 volts,starts to rise after the line voltage passes the zero point. Theramp generator has an oscillation frequency of twice theincoming line frequency. The slope of the ramp voltage can beadjusted by variation of the resistance of the I-megohmramp-control potentiometer. The output phase can becontrolled easily to provide 1800 firing of the triac byprogramming the voltage at terminal 9 of the zero-voltageswitch. The basic operation of the zero-voltage switch driving athyristor with an inductive load was explained previously inthe discussion on switching of inductive loads.

TRIAC POWER CONTROLS FORTHREE-PHASE SYSTEMS

This section describes recommended configurations forpower-control circuits intended for use with both inductiveand resistive balanced three-phase loads. The specific designrequirements for each type of loading condition are discussed.

In the power-control circuits described, theintegrated-circuit zero-voltage switch is used as the triggercircuit for the power triacs. The following conditions are alsoimposed in the design of the triac control circuits:

I. The load should be connected in a three-wireconfiguration with the triacs placed external to the load;eiter delta or wye arrangements may be used. Four-wireloads in wye configurations can be handled as threeindependent single-phase systems. Delta configurations inwhich a triac is connected within each phase rather thanin the incoming lines can also be handled as threeindependent single-phase systems.

2. Only one logic command signal is available for thecontrol circuits. This signal must be electrically isolatedfrom the three-phase power system.

3. Three separate triac gating signals are required.4. For operation with resistive loads, the zero-voltage

switching technique should be used to minimize anyradio-frequency interference (RFI) that may begenerated.

* The de logic circuitry provides the low-level electrical signal thatdictates the state of the load. For temperature controls, the de logiccircuitry includes a temperature sensor for feedback. The ReAintegrated-circuit zero-voltage switch, when operated in the de modewith some additional circuitry. can replace the de logic circuitry fortemperature controls.

Isolation of DC Logic CircuitryAs explained earlier under Special Application

Considerations, isolation of the de logic circuitry* from the acline, the triac, and the load circuit is often desirable even inmany single-phase power-control. applications. In controlcircuits for polyphase power systems, however, this type ofisolation is essential, because the common point of the de logiccircuitry cannot be referenced to a common line in all phases.

In the three-phase circuits described in this section,photo-optic techniques (i.e., photo-coupled isolators) are usedto provide the electrical isolation of the de logic commandsignal from the ac circuits and the load. The photo-coupledisolators consist of an infrared light-emitting diode aimed at asilicon photo transistor, coupled in a common package. Thelight-emitting diode is the input section, and the phototransistor is the output section. The two components provide avoltage isolation typically of 1500 volts. Other isolationtechniques, such as pulse transformers, magnetoresistors, orreed relays, can also be used with some circuit modifications.

Resistive LoadsFig. 55 illustrates the basic phase relationships of a

balanced three-phase resistive load, such as may be used inheater applications, in which the application of load power is

Fig. 55 - Voltage phase relationship for a three-phase resistive loadwhen the application of load power is controlled byzero·voltage switching: (a) voltage waveforms, (b) load-circuitorientation of voltages. (The dashed lines indicate the normalrelationship of the phases under steady-state conditions. Thedeviation at start-up and turn-off should be noted.)

IcAI'Hn82 ---~_'~i _, ~ ~~~_voltage.

2. A single phase of a wye configuration type of three-wiresystem cannot be turned on.

3. Two phases must be turned on for initial starting of thesystem. These two phases form a single-phase circuitwhich is out of phase with both of its component phases.The single-phase circuit leads one phase by 30 degreesand lags the other phase by 30 degrees.

These conditions indicate that in order to maintain asystem in which no appreciable RFI is generated by theswitching action from initial starting through the steady-stateoperating condition, the system must first be turned on, byzero-voltage switching, as a single-phase circuit and then mustrevert to synchronous three-phase operation.

Fig. 56 shows a simplified circuit configuration of athree-phase heater control that employs zero-voltagesynchronous switching in the steady-state operating condition,with random starting. In this system, the logic command toturn on the system is given when heat is required, and thecommand to turn off the system is given when heat is notrequired. Time proportioning heat control is also possiblethrough the use of logic commands.

(' ~\.

zero-voltage crossing relative to. their particular phase. Abalanced three-phase sensing circuit is set up with the threezero-voltage switches each connected to a particular phase ontheir common side (terminal 7) and referenced at their highside (terminal 5), through the current-limiting resistors R4,R5, and R6, to an established artificial neutral point. Thisartificial neutral point is electrically equivalent to theinaccessible neutral point of the wye type of three-wire loadand, therefore, is used to establish the desired phaserelationships. The same artificial neutral point is also used toestablish the proper phase relationships for a delta type ofthree-wire load. Because only one triac <s pulsed on at a time,the diodes (01, 02, and 03) are necessary to trigger theopposite-polarity triac, and, in this way, to assure initiallatching-on of the system. The three resistors (Rl, R2, andR3) are used for current limiting of the gate drive when theopposite-polarity triac is triggered on by the line voltage.

In critical applications that require suppression of allgenerated RFI, the circuit shown in Fig. 57 may be used. Inaddition to synchronous steady-state operating conditions, thiscircuit also incorporates a zero-voltage starting circuit. Thestart-up condition is zero-voltage synchronized to a

3-PHASERESI$TrVE LOAD(DEL TA OR WYEl

Fig. 56 - Simplified diagram of a three-phase heater control thatemploys zero-voltage synchronous switching in thesteady-state operating conditions.

single-phase, 2-wire, line-to-line circuit, comprised of phases Aand B. The logic command engages the single-phase start-upzero-voltage switch and three-phase photo-coupledisolators OC13, OCI4, OCI5 through the photo-eoupledisolators OCII and OCI2. The single-phase zero-voltageswitch, which is synchronized to phases A and B, starts thesystem at zero voltage. As soon as start-up is accomplished, thethree photo-eoupled isolators OCI3, OCI4, and OCI5 takecontrol, and three-phase synchronization begins. When the"logic command" is turned off, all control is ended, and thetriacs automatically turn off when the sine-wave currentdecreases to zero. Once the first phase turns off, the other twowill turn off simultaneously, 900 later, as a single-phaseline-to-Iine circuit, as is apparent from Fig. 55.

Inductive loadsFor inductive loads, zero-voltage turn-on is not generally

required because the inductive current cannot increaseinstantaneously; therefore, the amount of RFI generated isusually negligible. Also, because of· the lagging nature of theinductive current, the triacs cannot be pulse-fired at zerovoltage. There are several ways in which the zero-voltageswitch may be interfaced to a triac for inductive-loadapplications. The most direct approach is to use thezero-voltage switch in the dc mode, i.e., to provide acontinuous dc output instead of pulses at points ofzero-voltage crossing. This mode of operation is accomplishedby connection of terminal 12 to terminal 7, as shown inFig. 58. The output of the zero-voltage switch should also be

TO3 PHASERESISTIVELOAD

(OELTA OR WYEl

Fig. 57 - Three-phase power control that employs zero-voltagesynchronous switching both for steady-state operation andfor starting.

,I'--\-I I

\ 10K

PHOTO-COUPLEDISOLATORS

limited to approximately 5 milliamperes in the dc mode by the750-ohm series resistor. Use of a triac such as the T230 I0* isrecommended for this application. Terminal 3 is connected toterminal 2 to limit the steady-state power dissipation withinthe zero-voltage switch. For most three-phase inductive loadapplications, the current-handling capability of the 40692 triac(2.5 amperes) is not sufficient. Therefore, the 40692 is used asa trigger triac to turn on any other currently available powertriac that may be used. The trigger triac is used only to provide

trigger pulses to the gate of the power triac (one pulse per halfcycle); the power dissipation in this device, therefore, will beminimal.

Simplified circuits using pulse transformers and reed relayswill also work quite satisfactorily in this type of application.The RC networks across the three power triacs are used forsuppression of the commutating dv/dt when the circuitoperates into inductive loads.

• Formerly ReA 40692

The specific integrated-circuits, triacs, SCR's, and rectifiers included in circuit diagrams shown in this Application Note are listedbelow. Additional information on these devices can be obtained by requesting the applicable RCA data-bulletin file number.

~~ ~~ ~~. ~~CA3058, CA3059, and CA3079 490 T2300B (40526) 470CA3099E 620 T230lB (40691), T2301D (40692) 431CA3086 483 T64170 (40708) 406CA3080 475 S2600D (40655) 496CD4007A,CD4013A 479 Dl20lB (44003) 4952N5444 456 D3202U (45412) 577T2800B (40668) 364

Note: Numbers in parenthesis (e.g. 40668) are former RCA type numbers.

Guide to ReA Solid-State Devices

TA147 lN539 550·206 255 3 RECT TA2275 2N2895 550·204 517 143 PWR

TA148 lN540 550·206 255 3 RECT TA2276 2N2896 550·204 517 143 PWR

TA149 lNl095 550·206 255 3 RECT TA2277 2N2897 550·204 517 143 PWR

TA1000 lN547 550·206 255 3 RECT TA2307 2N3375 550·205 52 386 RF

TA1003 1N440B 550·206 252 5 RECT TA2311 2N2876 550·205 28 32 RF

TAl 004 lN441B 550·206 252 5 RECT TA2333 2N2857 550·205 33 61 RF

TA1005 lN442B 550·206 252 5 RECT TA2358 2N918 550·205 20 83 RF

TA1006 lN443B 550·206 252 5 RECT TA2358A 2N3600 550·205 20 83 RF

TA1007 lN444B 550·206 252 5 RECT TA2363 2N3839 550·205 69 229 RFTA1008 lN445B 550·206 252 5 RECT TA2388 2N3229 550·205 45 50 RFTA1011 lN2859A 550·206 265 91 RECT TA2402A 2N3054 550·204 45 527 PWR

TA1012 lN2860A 550·206 265 91 RECT TA2403A 2N3055 550·204 102 524 PWR

TA1013 lN2861A 550·206 265 91 RECT TA2442 2N3870 550·206 218 578 5CRTA1014 1N2862A 550·206 265 91 RECT TA2444 2N3871 550·206 218 578 5CR

TA1015 lN2863A 550·206 265 91 RECT TA2447 2N3872 550·206 218 578 5CRTA1016 lN2864A 550·206 265 91 RECT TA2458 2N3439 550·204 286 64 PWRTA1049 lN248C 550·206 287 6 RECT TA2462 2N3118 550·205 37 42 RF

TA1050 lN249C 550·206 287 6 RECT TA2463 2N3119 550·205 41 44 RFTA1051 lN250C 550·206 287 6 RECT TA2468A 2N3442 550·204 133 528 PWRTA1052 lN1195A 550·206 287 6 RECT TA2469A 2N3441 550·204 69 529 PWRTA1053 1N1196A 550·206 287 6 RECT TA2470 2N3440 550·204 286 64 PWRTA1054 lNl197A 550·206 287 6 RECT TA2492 2N3263 550·204 475 54 PWR

TA1055 lNl198A 550·206 287 6 RECT TA2493 2N3264 550·204 475 54 PWRTA1066 lN2858A 550·206 265 91 RECT TA2494 2N3265 550·204 475 54 PWRTA 1076 lN1199A 550·206 283 20 RECT TA2495 2N3266 550·204 475 54 PWRTA1077 lN1200A 550·206 283 20 RECT TA2501 2N3: 02 550·205 48 56 RFTA1078 lN1202A 550·206 283 20 RECT TA2509 2N3: 78 550·204 443 299 PWR

TA1079 lN1203A 550·206 283 20 RECT TA2509A 2N3l:79 550·204 443 299 PWRTA1080 lN1204A 550·206 283 20 RECT TA2510 2N3~83 550·204 304 138 PWRTA1081 lN1205A 550·206 283 20 RECT TA2511 2N3584 550·204 304 138 PWRTA1082 lN1206A 550·206 283 20 RECT TA2512 2N3585 5~.204 304 138 PWRTA1085 lNl183A 550·206 291 38 RECT TA2515 2N690 5 ·206 225 96 5CR

TA1086 lNl184A 550·206 291 38 RECT TA2544 2N3772 550·204 141 525 PWRTA1087 1N1186A 550·206 291 38 RECT TA2551 2N3553 550·205 52 386 RFTA1095 lN1197A 550·206 287 6 RECT TA2579 lN1341B 550·206 281 58 RECTTA1096 lN3194 550·206 294 41 RECT TA2580 1N1342B 550·206 281 58 RECTTA1111 lN3193 550·206 294 41 RECT TA2581 lN1344B 550·206 281 58 RECT

TA1112 lN3195 550·206 294 41 RECT TA2582 lN1345B 550·206 281 58 RECTTAl113 lN3196 550·206 294 41 RECT TA2583 1N 1346B 550·206 281 58 RECTTA1120 lN3253 550·206 294 41 RECT TA2584 lN1347B 550·206 281 58 RECTTA1121 lN3254 550·206 294 41 RECT TA2585 1N 1348B 550·206 281 58 RECTTA1122 lN3255 550·206 294 41 RECT TA2586 1N1341RB 550·206 281 58 RECT

TA1123 1N3256 550·206 294 41 RECT TA2587 lN1342RB 550·206 281 58 RECTTA1171 2N681 550·206 225 96 5CR TA2588 lN1344RB 550·206 281 58 RECTTA1172 2N682 550·206 225 96 5CR TA2589 1N1345RB 550·206 281 58 RECTTA1173 2N683 550·206 225 96 5CR TA2590 lN1346RB 550·206 281 58 RECTTAl174 2N684 550·206 225 96 5CR TA2591 1N1347RB 550·206 281 58 RECT

TA1175 2N685 550·206 225 96 5CR TA2592 1N1348RB 550·206 281 58 RECTTAl176 2N686 550·206 225 96 5CR TA2597 2N3528 550·206 144 114 5CRTAll77 2N687 550·206 225 96 5CR TA2598 2N3669 550·206 203 116 5CRTAl178 2N688 550·206 225 96 5CR TA2600 40282 550·205 279 68 RFTAl179 2N689 550·206 225 96 5CR TA2606 2N3478 550·205 60 77 RF

TA1182 1N3563 550·206 294 41 RECT TA2616 2N3632 550·205 52 386 RFTA1204 2N1842A 550·206 234 28 5CR TA2617 2N3529 550·206 144 114 5CRTA1205 2N1843A 550·206 234 28 5CR TA2618 2N3670 550·206 203 116 5CRTA1206 2N1844A 550·206 234 28 5CR TA2619 40280 550·205 275 301 RFTA1207 2N1845A 550·206 234 28 5CR TA2620 40281 550·205 279 68 RF

TA1208 2N1846A 550·206 234 28 5CR TA2621 2N3668 550·206 203 116 5CRTA1209 2N1847A 550·206 234 28 5CR TA2644 3N140 550·201 667 285 M05/FETTA1210 2N1848A 550·206 234 28 5CR TA2645A 2N3773 550·204 149 526 PWRTA1211 2N1849A 550·206 234 28 5CR TA2650 2N3771 550·204 141 525 PWRTA1212 2N1850A 550·206 234 28 5CR TA2651 2N4036 550·204 410 216 PWR

TA1214 lN1187A 550·206 291 38 RECT TA2653 53700B 550·206 172 306 5CRTA1215 lN1188A 550·206 291 38 RECT TA2654 537000 550·206 172 306 5CRTA1216 lNl189A 550·206 291 38 RECT TA2655 53700M 550·206 172 306 5CRTA1217 lNl190A 550·206 291 38 RECT TA2657 40341 550·205 287 74 RFTA1222 2N3228 550·206 144 114 5CR TA2657A 40340 550·205 287 74 RF

TAl225 2N3525 550·206 144 114 5CR TA2658 2N3866 550·205 73 80 RFTA1863 2N1491 550·205 24 10 RF TA2669 2N5039 550·204 461 698 PWRTA1883 2N1492 550·205 24 10 RF TA2669A 2N5038 550·204 461 698 PWRTA1910A 2N697 550·204 493 16 PWR TA2670 2N4037 550·204 410 216 PWRTA1951 2N1493 550·205 24 10 RF TA2670A 2N4314 550·204 410 216 PWR

TA1986 2N699 550·204 495 22 PWR TA2675 2N5016 550·205 96 255 RFTA2053 2N1613 550·204 498 106 PWR TA2676 T2700B 550·206 62 351 TRITA2053A 2N1711 550·204 503 26 PWR TA2685 T27000 550·206 62 351 TRITA2053B 2N2102 550·204 498 106 PWR TA2692 2N3733 550·205 64 72 RFTA2192A 2N2270 550·204 513 24 PWR TA2694 2N3896 550·206 218 578 5CR

504

Developmental Number-to-Commercial Number Cross-Reference IndexComm. DATA· File Product Comm. DATA· File Product

Dev. No. No.BOOK Page No. Line

Dev. No. No. BOOK Page No. lineVol. No. Vol. No.

TA2695 2N3897 550·206 218 578 5CR TA5333 CA3036 550·201 158 275 L1CTA2696 2N3898 550·206 218 578 5CR TA5334 CA3035 550·201 243 274 L1CTA2703A 40349 550·204 26 88 PWR TA5334 CA3035V1 550·201 243 274 L1CTA2705 2N3873 550·206 218 578 5CR TA5345 CA3028A 550·201 318 382 L1CTA2707 2N3899 550·206 218 578 5CR TA5345A CA30288 550·201 318 382 L1C

TA2710 41024 550·205 379 658 RF TA5346 CA3015A 550·201 89 310 L1CTA2714 2N4012 550·205 77 90 RF TA5347 CA3010A 550·201 89 310 L1CTA2733 40319 550·204 654 78 PWR TA5348 CA3030A 550·201 89 310 L1CTA2733A 40362 550·204 654 78 PWR TA5349 CA3029A 550·201 89 310 L1CTA2758 2N6093 550·205 216 484 RF TA5350 CA3016A 550·201 89 310 L1C

TA2761 40608 550·205 291 356 RF TA5351 CA3008A 550·201 89 310 L1CTA2765 2N5239 550·204 373 321 PWR TA5360 CA3044 550·201 484 340 L1CTA2765A 2N5240 550·204 373 321 PWR TA53618 C04000A 550·203 30 479 C05/Ma5TA2773 2N4101 550·206 144 114 5CR TA5369 CA3040 550·201 282 363 L1CTA2774 2N4102 550·206 144 114 5CR TA53718 CA3062 550·201 367 421 L1C

TA2775 2N4103 550·206 203 116 5CR TA5385CV C04024AK 550·203 120 503 C05/M05TA2791 2N5102 550·205 113 279 RF TA5401 CA3038 550·201 80 316 L1CTA2792 2N4933 550·205 92 249 RF TA5401 CA3038A 550·201 89 310 L1CTA2793 2N5070 550·205 100 268 RF TA5402 CA3037 550·201 80 316 L1CTA2800 2N5109 550·205 118 281 RF TA5402 CA3037A 550·201 89 310 L1C

TA2808 2N4348 550·204 149 526 PWR TA54558 C04001A 550·203 30 479 Ca5/Ma5TA2809 2N4347 550·204 133 528 PWR TA54568 C04002A 550·203 30 479 Ca5/Ma5TA2819 2N5415 550·204 292 336 PWR TA5457 CA3045 550·201 177 341 L1CTA2819A 2N5416 550·204 292 336 PWR TA5458 CA3046 550·201 177 341 L1CTA2827 2N5071 550·205 105 269 RF TA5460AV C04016AK 550·203 84 479 Ca5/Ma5

TA2828 2N4932 550·205 92 249 RF TA5507 CA3050 550·201 329 361 L1CTA2836 2N5441 550·206 55 593 TRI TA5513 CA3026 550·201 226 388 L1CTA2837 2N5442 550·206 55 593 TRI TA5516 CA3039 550·201 122 343 LICTA2838 2N5444 550·206 55 593 TRI TA5517C CA3064 550·201 490 396 L1CTA2839 2N5445 550·206 55 593 TRI TA5519V C04008AK 550·203 49 479 Ca5/Ma5

TA2840 3N128 550·201 634 309 Ma5/FET TA5523A CA3048 550·201 247 377 L1CTA2845 1N5214 550·206 270 245 RECT TA5537 CA3049T 550·201 234 611 L1CTA2845A 1N5213 550·206 270 245 RECT TA5551 C04000AK 550·203 30 479 Ca5/Ma5TA2845B 1N5212 550·206 270 245 RECT TA5553 C04007AK 550·203 43 479 Ca5/Ma5TA2845C 1N5211 550·206 270 245 RECT TA5554 C04001AK 550·203 30 479 Ca5/Ma5

TA2871 2N4240 550·204 304 138 PWR TA5555 C04002AK 550·203 30 479 Ca5/Ma5TA2875 2N4440 550·205 87 217 RF TA55568 C04006AK 550·203 37 479 Ca5/Ma5TA2892 T2300A 550·206 33 470 TRI TA5561 CA3047A 550·201 61 360 L1CTA2829A T2302A 550·206 33 470 TRI TA5562 CA3047 550·201 61 360 L1CTA2893 T23008 550·206 33 470 TRI TA5578V C04014AK 550·203 74 479 Ca5/Ma5

TA2893A T23028 550·206 33 470 TRI TA5579V C04015AK 550·203 79 479 Ca5/Ma5TA2894 T23000 550·206 33 470 TRI TA5580V C04018AK 550·203 95 479 Ca5/Ma5TA2894A T23020 550·206 33 470 TRI TA5615A CA3059 550·201 338 490 L1CTA2911 2N5294 550·204 61 322 PWR TA5625A CA3066 550·201 533 466 L1CTA5032 CA3000 550·201 288 121 L1C TA5628C CA3089E 550·201 455 561 L1C

TA5033 CA3001 550·201 294 122 L1C TA5634 C02154 550·201 421 402 L1CTA5035 CA3002 550·201 256 123 L1C TA5645 CA3060E 550·201 38 537 L1CTA5037 CA3004 550·201 300 124 L1C TA5649A CA3070 550·201 549 468 LICTA5112 CA3005 550·201 306 125 L1C TA5652V C04019AK 550·203 100 479 Ca5/Ma5TA5112A CA3006 550·201 306 125 L1C TA5655 CA3051 550·201 329 361 L1C

TA51158 CA3007 550·201 313 126 L1C TA5660V C04009AK 550·203 54 479 Ca5/Ma5TA5124 CA3008 550·201 80 316 L1C TA5668V C04010AK 550·203 54 479 Ca5/Ma5TA5158 CA3015 550·201 80 316 L1C TA5672 CA3052 550·201 432 387 L1CTA5164 C02150 550·201 409 308 L1C TA5675V C04013AK 550·203 68 479 Ca5/Ma5TA5165 C02151 550·201 409 308 L1C TA5677V C04044AK 550·203 214 590 Ca5/Ma5

TA5166 C02152 550·201 409 308 L1C TA5681V C04011AK 550·203 61 479 Ca5/Ma5TA5180 CA3010 550·201 80 316 L1C TA5682V C04012AK 550·203 61 479 Ca5/Ma5TA5183 CA3033 550·201 61 360 L1C TA5683V C04021AK 550·203 110 479 Ca5/Ma5TA5183A CA3033A 550·201 61 360 L1C TA5684V C04017AK 550·203 90 479 Ca5/Ma5TA5213 CA3011 550·201 262 128 L1C TA5690X C02501 E 550·201 403 392 L1C

TA5214 CA3012 550·201 262 128 L1C TA57028 CA3071 550·201 549 468 L1CTA5218 CA3023 550·201 276 243 L1C TA5716V C04057AK 550·203 272 635 Ca5/Ma5TA5219 CA3021 550·201 276 243 L1C TA5716W C04057AO 550·203 272 635 Ca5/Ma5TA5220 CA3020 550·201 268 339 L1C TA5718 CA3054 550·201 226 388 L1CTA5222 CA3018 550·201 160 338 L1C TA5721 X C02500E 550·201 403 392 L1C

TA5222A CA3018A 550·201 160 338 LIC TA5733 CA3053 550·201 318 382 L1CTA5225 CA3019 550·201 118 236 L1C TA5752 CA3067 550·201 533 466 L1CTA5234 CA3013 550·201 471 129 L1C TA5757 CA3076 550·201 479 430 L1CTA5235 CA3014 550·201 471 129 LIC TA57588 CA3085 550·201 375 491 L1CTA5236 CA3022 550·201 276 243 L1C TA5776V C04020AK 550·203 105 479 Ca5/Ma5

TA5253 CA3016 550·201 80 316 L1C TA5785X C02503E 550·201 403 392 L1CTA5254 CA3030 550·201 80 316 L1C TA5786X C02502E 550·201 403 392 L1CTA5261 C02153 550·201 409 308 L1C TA5790 CA30600 550·201 38 537 L1CTA5277 CA3001 550·201 294 122 L1C TA5795 CA3058 550·201 338 490 L1CTA5278 CA3029 550·201 80 316 L1C TA5797 CA741T 550·201 74 531 L1C

TA5282 CA3004 550·201 300 124 L1C TA5799A CA3084 550·201 134 482 L1CTA5315 CA3043 550·201 466 331 L1C TA5807 CA3078T 550·201 52 535 L1CTA5316 CA3041 550·201 498 318 L1C TA5814 CA3065 550·201 514 412 L1CTA5317A CA3042 550·201 506 319 L1C TA5816 CA3080 550·201 30 475 L1CTA5327C CA3040 550·201 282 363 L1C TA5820 CA3541D 550·201 395 536 L1C

505

Developmental Number-to-Commercial Number Cross-Reference IndexComm. DATA· Comm. DATA· File Product

Dev. No. BOOK PageFile Product Dev. No. BOOK Page

No. No. Line No. No. LineVol. No. Vol. No.TA5842 CA3088E SSD·201 446 560 L1C TA6094 CA3183AE SSD·201 166 532 L1CTA5855A CA30910 SSO·201 383 534 L1C TA6111 CA1458T SSO·201 74 531 L1CTA5858 CA3081 SSO·201 126 480 L1C TA6111A CA1558T SSO·201 74 531 L1CTA5866 CA3075 SSO·201 462 429 L1C TA6116V C04046AK SSO·203 226 637 COS/MOSTA5867V C04023AK SSO·203 61 479 COS/MOS TA6116W C04046AO SSO·203 226 637 CDS/MDS

TA5867W C04023AO SSO·203 61 479 COS/MDS TA6116X C04046AE SSO·203 226 637 CDS/MDSTA5867X C04023AE SSO·203 61 479 CDS/MDS TA6119 CA3093E SSO·201 152 533 L1CTA5872V C04027AK SSO·203 135 503 CDS/MDS TA6122C CA3100T SSO·201 98 625 L1CTA5873V C04028AK SSO·203 141 503 CDS/MDS TA61448 CA3121 E SSO·201 567 688 L1CTA5876W C04035AO SSO·203 177 568 CDS/MDS TA6145V C04039AK SSO-203 184 613 COS/MOS

TA5878W C04034AO SSO-203 169 575 CDS/MDS TA6145W C04039AO SSO-203 184 613 CDS/MDSTA5884AV C04022AK SSO·203 115 479 CDS/MDS TA6145X C04039AE SSO·203 184 613 CDS/MDSTA5884W C04022AO SSO-203 115 479 CDS/MDS TA6153W C04052AO SSO-203 258 Prel. CDS/MDSTA5884AX C04022AE SSO-203 115 479 CDS/MDS TA6154W C04053AO SSO-203 258 Pre!. COS/MDSTA5897X C02501E SSO-201 698 392 L1C TA61550 CA3123E SSO-201 450 631 L1C

TA5898X C02503E SSO-201 698 392 L1C TA6157 CA747CE SSO-201 74 531 L1CTA5899X CD2500E SSO-201 698 392 L1C TA6157A CA747E SSO-201 74 531 L1CTA5900X C02502E SSO-201 698 392 L1C TA6164 CA3094T SSO-201 346 598 L1CTA59128 CA3072 SSO-201 549 468 L1C TA6165A CA3094AT SSO-201 346 598 L1CTA5914C CA3068 SSO·201 525 467 L1C TA6181 CA3146E SSO-201 166 532 L1C

TA5920V C04025AK SSO-203 30 479 CDS/MDS TA6182 CA3118T SSO-201 166 532 L1CTA5920W C04025AO SSO·203 30 479 CDS/MDS TA6183 CA3183E SSO-201 166 532 L1CTA5920X C04025AE SSO-203 30 479 CDS/MDS TA6189 CA3099E SSO-201 359 620 L1CTA5925V C04029AK SSO-203 146 503 CDS/MDS TA6220 CA2111AE SSO-201 520 612 L1CTA5925W C04029AO SSO·203 146 503 CDS/MDS TA6228 CA3102E SSO-201 234 611 L1C

TA5925X C04029AE SSO-203 146 503 CDS/MDS TA6237V C04054AK SSO-203 266 634 CDS/MDSTA5926V C04036AK SSO-203 184 613 CDS/MDS TA6237W C04054AO SSO-203 266 634 CDS/MDSTA5926W C04036AO SSO-203 184 613 COS/MOS TA6237X C04054AE SSO-203 266 634 CDS/MDSTA5932 CA3090Q SSO-201 440 502 Lie TA6238V C04055AK SSO-203 266 634 COS/MOSTA5940V C04030AK SSO-203 153 503 COS/MOS TA6238W C04055AO SSO-203 266 634 COS/MOS

TA5940W C04030AO SSO-203 153 503 COS/MDS TA6238X C04055AE SSO-203 266 634 CDS/MDSTA5940X C04030AE SSO-203 153 503 CDS/MDS TA6243X CA3120E SSO-201 581 691 L1CTA5951V C04038AK SSO-203 164 503 CDS/MDS TA6246V C04049AK SSO-203 251 599 CDS/MDSTA5951W C04038AO SSO-203 164 503 CDS/MDS TA6246W C04049AO SSO-203 251 599 CDS/MDSTA5951X C04038AE SSD-203 164 503 CDS/MDS TA6246X C04049AE SSO-203 251 599 CDS/MDS

TA5957 CA3018L SSO-201 605 515 L1C TA6250V C04048AK SSO-203 244 636 COS/MDSTA5958 CA3039L SSO-201 605 515 L1C TA6250W C04048AO SSO-203 244 636 COS/MDSTA5959 CA3045L SSO-201 605 515 L1C TA6250X CD4048AE SSO-203 244 636 COS/MDSTA5960 CA3054L SSD-201 605 515 L1C TA6251V C04056AK SSO-203 266 634 CDS/MDSTA5963V C04032AK SSO·203 164 503 CDS/MDS TA6251W C04056AO SSO-203 266 634 CDS/MDSTA5963W C04032AO SSO-203 164 503 CDS/Mas TA6251 x C04056AE SSO-203 266 634 CDS/MDSTA5963X C04032AE SSO-203 164 503 CDS/MDS TA6265V C04050AK SSO-203 251 599 CDS/MDSTA5964 CA3015L SSO-201 605 515 L1C TA6265W CD4050AD SSO-203 251 599 caS/MDSTA5975 CA3028AL SSO-201 605 515 L1C TA6265X C04050AE SSO-203 251 599 CDS/MDSTA5978 CA3084L SSO-201 605 515 L1C TA6269X CA3095E SSO-201 189 591 L1C

TA5979 CA741 L SSO·201 605 515 L1C TA6270X CA3096E SSO-201 141 595 L1CTA5989 C04031AO SSO-203 158 569 caS/MDS TA6270AX CA3096AE SSD-201 141 595 L1CTA5998 CA3083 SSO·201 130 481 L1C TA6281 X CA3097E SSO-201 199 633 L1CTA5999W C04037AO SSO-203 191 576 CDS/MDS TA6281 X CA3097E SSO-201 199 633 L1CTA6007W C04051AO SSO·203 258 Pre!. CDS/MDS TA6289X CA 747CE SSO·201 74 531 L1C

TA6010V C04047AK SSO-203 233 623 CDS/MDS TA6289AX CA 747E SSD-201 74 531 L1CTA6010W C04047AO SSO-203 233 623 CDS/MDS TA6306 CA3401 E SSD-201 113 630 L1CTA6010X C04047AE SSD-203 233 623 CDS/MDS TA6309 CA3049L SSO-201 605 515 L1CTA6011 C04042AO SSO-203 210 589 CDS/MDS TA6314T CA1458T SSO-201 74 531 L1CTA6014 CA3068 SSO-201 525 467 L1C TA6314T CA1558T SSD-201 74 531 L1CTA6018V C04026AK SSO-203 126 503 CDSIMDS TA6319 CA3126Q SSO-201 565 Pre!. L1CTA6018W C04026AO SSO-203 126 503 CDS/MDS TA6330T CA3094AT SSO-201 346 598 L1CTA6018X C04026AE SSD-203 126 503 CDS/MDS TA6368X CA3600E SSO-201 213 619 L1CTA6029 CA741CT SSO-201 74 531 L1C TA6379X CA3072 SSO-201 549 468 L1CTA6031V C04041AK SSO-203 203 572 CDS/MDS TA6389T CA3080 SSO-201 30 475 LIC

TA6031W C04041AO SSO-203 203 572 CDS/MDS TA6391W C04066AO SSO-203 303 Pre!. CDS/MDSTA6031X C04041AE SSO-203 203 572 CDS/MDS TA7003 2N5470 SSO-205 140 350 RFTA6033 CA3082 SSO-201 126 480 L1C TA7005 2N6249 SSO-204 385 523 PWRTA6037 CA748CT SSO·201 74 531 L1C TA7006 2N6250 SSO·204 385 523 PWRTA5037A CA748T SSO·201 74 531 L1C TA7007 2N6251 SSO-204 385 523 PWRTA6044 CA3086 SSO-201 183 483 L1C TA7016 2N5575 SSO-204 162 359 PWRTA6051 CA3079 SSO-201 338 490 L1C TA7017 2N5578 SSO-204 162 359 PWRTA6062W C04045AO SSO-203 220 614 CDS/MDS TA7032 3N138 SSO-201 639 283 MDS/FETTA6062X C04045AE SSO-203 220 614 CDS/MDS TA7047 2N4427 SSO-205 81 228 RFTA6065V C04040AK SSO-203 197 624 CDS/MaS TA7048 1N5218 SSO-206 270 245 RECTTA6065W C04040AO SSO-203 197 624 CDS/MDS TA7048A 1N5217 SSO-206 270 245 RECTTA6065X C04040AE SSO-203 197 624 CDS/MDS TA70488 1N5216 SSO-206 270 245 RECTTA6080V C04043AK SSO-203 214 590 CDS/MDS TA7048C lN5215 SSO-206 270 245 RECTTA6080W C04043AO SSO·203 214 590 CDS/Mas TA7078 40606 SSO·207 168 600 RFTA6080X C04043AE SSO-203 214 590 CDS/MDS TA7079 40577 SSO-207 148 297 RF

TA6081V C04044AK SSO·203 214 590 CDS/MDS TA7080 40578 SSO-207 155 298 RFTA6081W C04044AO SSO-203 214 590 CDS/MDS TA7090 JAN2N3866 SSO·207 81 RFTA6081X C04044AE SSO·203 214 590 CDSIMDS TA7121 2N5320 SSO-204 429 325 PWRTA6084 CA3146AE SSO-201 166 532 L1C TA7122 2N5321 SSO·204 429 325 PWRTA6091 CA3118AT SSO-201 166 532 L1C TA7124 2N5322 SSO-204 429 325 PWR

506

Developmental Number-to-Commercial Number Cross-Reference IndexComm. DATA- File Product Comm.

DATA- File ProductDav. No. No. BOOK Page No. Line

Dav. No. No. BOOK Page No. LineVol. No. Vol. No.TA7125 2N5323 SSD-204 429 325 PWR TA7426 2N5443 SSD-206 55 593 TRITA7130 2N5804 SSD-204 379 407 PWR TA7427 2N5446 SSD-206 55 593 TRITA7130A 2N5805 SSD-204 379 407 PWR TA7428 2N5567 SSD-206 92 457 TRITA7134 2N6177 SSD-204 278 508 PWR TA7429 2N5568 SSD-206 92 457 TRITA7137 2N5296 SSD-204 61 322 PWR TA7430 2N5571 SSD-206 85 458 TRI

TA7146 2N5090 SSD-205 109 270 RF TA7431 2N5572 SSD-206 85 458 TRITA7149 40600 SSD-201 712 333 MDS/FET TA7434 S2600B SSD-206 156 496 SCRTA7150 40603 SSD-201 720 334 MDS/FET TA7435 S2600D SSD-206 156 496 SCRTA7151 40604 SSD-201 720 334 MOS/FET TA7441 T6401B SSD-206 107 459 TRITA7155 2N5293 SSD-204 61 322 PWR TA7442 T640lD SSD-206 107 459 TRI

TA7156 2N5295 SSD-204 61 322 PWR TA7452 S3705M SSD-206 187 354 SCRTA7189 40602 SSD-201 712 333 MOS/FET TA7453 S3706M SSD-206 187 354 SCRTA7205 2N5921 SSD-205 181 427 RF TA7454 D2601EF SSD-206 303 354 RECTTA7238 2N5262 SSD-204 423 313 PWR TA7455 D2601DF SSD-206 303 354 RECTTA7244 3N139 SSD-201 643 284 MOS/FET TA7456 D2600EF SSD-206 303 354 RECT

TA7262 40601 SSD-201 712 333 MOS/FET TA7461 T6411B SSD-206 107 459 TRITA7264 2N5954 SSD-204 170 675 PWR TA7462 T6411D SSD-206 107 459 TRITA7265 2N5955 SSD-204 170 675 PWR TA7463 S2620B SSD-206 156 496 SCRTA7266 2N5956 SSD-204 170 675 PWR TA7464 S2620D SSD-206 156 496 SCRTA7270 2N5781 SSD-204 34 413 PWR TA7465 S2610B SSD-206 156 496 SCR

TA7271 2N5782 SSD-204 34 413 PWR TA7466 S2610D SSD-206 156 496 SCRTA7272 2N5783 SSD-204 34 413 PWR TA7467 T4101M SSD-206 92 457 TRITA7274 3N141 SSD-201 667 285 MOS/FET TA7468 T4100M SSD-206 85 458 TRITA7275 3N143 SSD-201 634 309 MOS/FET TA7477 2N5913 SSD-205 146 423 RFTA7279 2N6248 SSD-204 217 677 PWR TA7479 2N5569 SSD-206 92 457 TRI

TA7280 2N6247 SSD-204 217 677 PWR TA7480 2N5570 SSD-206 92 457 TRITA7281 2N6246 SSD-204 217 677 PWR TA7481 T4111M SSD-206 92 457 TRITA7285 2N5202 SSD-204 443 299 PWR TA7482 2N5573 SSD-206 85 458 TRITA7289 2N5784 SSD-204 34 413 PWR TA7483 2N5574 SSD-206 85 458 TRITA7290 2N5785 SSD-204 34 413 PWR TA7484 T4110M SSD-206 85 458 TRI

TA7291 2N5786 SSD-204 34 413 PWR TA7487 2N5920 SSD-205 175 440 RFTA7303 2N5180 SSD-205 130 289 RF TA7500 2N5754 SSD-206 28 4111 TRITA7306 3N142 SSD-201 648 286 MOS/FET TA7501 2N5755 SSD-206 28 414 TRITA7311 2N5496 SSD-204 90 353 PWR TA7502 2N5756 SSD-206 28 414 TRITA7312 2N5497 SSD-204 90 353 PWR TA7503 2N5757 SSD-206 28 414 TRI

TA7313 2N5494 SSD-204 90 353 PWR TA7504 T6420B SSD-206 55 593 TRITA7314 2N5495 SSD-204 90 353 PWR TA7505 T6420D SSD-206 55 593 TRITA7315 2N5492 SSD-204 90 353 PWR TA7506 T6420M SSD-206 55 593 TRITA7316 2N5493 SSD-204 90 353 PWR TA7507 S6420B SSD-206 218 578 SCRTA7317 2N5490 SSD-204 90 353 PWR TA7508 S6420D SSD-206 218 578 SCR

TA7318 2N5491 SSD-204 90 353 PWR TA7509 S6420M SSD-206 218 578 SCRTA7319 2N5179 SSD-204 124 288 RF TA7513 2N5838 SSD-204 356 410 PWRTA7322 2N5189 SSD-204 418 296 PWR TA7514 40964 SSD-205 351 581 RFTA7323 2N5671 SSD-204 481 383 PWR TA7518 T2800M SSD-206 69 364 TRITA7323A 2N5672 SSD-204 481 383 PWR TA7530 2N5839 SSD-204 356 410 PWR

TA7327 JANTX2N3866 SSD-207 81 RF TA7532 2N5919A SSD-205 169 505 RFTA7328 JANTX2N3553 SSD-207 80 RF TA7534 2N6354 SSD-204 469 582 PWRTA7329 JANTX2N3375 SSD-207 80 RF TA7542 S3800MF SSD-206 199 639 ITRTA7337 2N6032 SSD-204 487 462 PWR TA7543 S3800M SSD-206 199 639 ITRTA7337A 2N6033 SSD-204 487 462 PWR TA7543 S2060Q SSD-206 138 654 SCR

TA7352 3N153 SSD-201 659 320 MOS/FET TA 7545 S2060Y SSD-206 138 654 SCRTA7353 3N152 SSD-201 654 314 MOS/FET TA7546 S2060F SSD-206 138 654 SCRTA7354 JAN2N4440 SSD-207 80 RF TA7547 T4121B SSD-206 92 457 TRITA7355 JANTX2N4440 SSD-207 80 RF TA7548 T4121D SSD-206 92 457 TRITA7358 JANTX2N5071 SSD-207 81 RF TA7549 T4121M SSD-206 92 457 TRI

TA7360 JAN2N5071 SSD-207 81 RF TA7550 T4120B SSD-206 85 458 TRITA7361 40605 SSD-205 318 389 RF TA7551 T4120D SSD-206 85 458 TRITA7362 2N5297 SSD-204 61 322 PWR TA7552 T4120M SSD-206 85 458 TRITA7363 2N5298 SSD-204 61 322 PWR TA7553 S7430M SSD-206 238 408 SCRTA7364 T2800B SSD-206 69 364 TRI TA7554 2N6178 SSD-204 435 562 PWR

TA7365 T2800D SSD-206 69 364 TRI TA7555 2N6179 SSD-204 435 562 PWRTA7367 2N5918 SSD-205 164 448 RF TA7556 2N6180 SSD·204 435 562 PWRTA7374 3N159 SSD·201 675 326 MOS/FET TA7557 2N6181 SSD-204 435 562 PWRTA7375 3N154 SSD-201 662 335 MOS/FET TA7563 S6200B SSD-206 210 418 SCRTA7381 2N6098 SSD-204 121 485 PWR TA7564 S6200D SSD-206 210 418 SCR

TA7382 2N6099 SSD-204 121 485 PWR TA7565 S6200M SSD-206 210 418 SCRTA7383 2N6100 SSD-204 121 485 PWR TA7570 S6210B SSD-206 210 418 SCRTA7384 2N6101 SSD-204 121 485 PWR TA7571 S6210D SSD-206 210 418 SCRTA8385 2N6102 SSD-204 121 485 PWR TA7579 T2313A SSD-206 28 414 TRITA7386 2N6103 SSD-204 121 485 PWR TA7580 T2313B SSD-206 28 414 TRI

TA7399 40673 SSD-201 745 381 MOS/FET TA7581 T2313D SSD-206 28 414 TRITA7401 D3202U SSD-206 350 577 DIAC TA7582 2N5757 SSD·206 28 414 TRITA7403 40836 SSD-205 298 497 RF TA7582 T2313M SSD-206 28 414 TRITA7404 S2800B SSD-206 166 501 SCR TA7583 T6401M SSD-206 107 459 TRITA7405 S2800D SSD-206 166 501 SCR TA7584 T6411M SSD-206 107 459 TRI

TA7408 2N5914 SSD-205 152 424 RF TA7588 40965 SSD-205 351 581 RFTA7409 2N5915 SSD-205 152 424 RF TA7589 2N5994 SSD-205 19'3 453 RFTA7410 2N6212 SSD-204 312 507 PWR TA7590 2N3650 SSD-206 238 408 SCRTA7411 2N5916 SSD-205 158 425 RF TA7591 2N3651 SSD-206 238 408 SCRTA7420 2N5840 SSD-204 356 410 PWR TA7592 2N3652 SSD-206 238 408 SCR

507

Developmental Number-to-Commercial Number Cross-Reference IndexComm. DATA· File Product Comm. DATA· File ProductDay. No. No. BOCK Page No. Line Dev. No. No. BOOK Page No. LineVol. No. Vol. No.

TA7593 2N3653 SSD·206 238 408 SCR TA7988 S2060A SSD-206 138 654 SCRTA7599 S6220B SSD-206 210 418 SCR TA7989 S2060B SSD·206 138 654 SCRTA7600 S6220D SSD-206 210 418 SCR TA7990 S2060C SSD-206 138 654 SCRTA7601 S6220M SSD-206 210 418 SCR TA7991 S2060D SSD·206 138 654 SCRTA7602 T6421B SSD-206 107 459 TRI TA7993 2N6265 SSD·205 228 543 RF

TA7603 T6421D SSD·206 107 459 TRI TA7994 2N6266 SSD·205 234 544 RFTA7604 T6421M SSD·206 107 459 TRI TA7995 2N6267 SSD-205 240 545 RFTA7614 T4104B SSD-206 99 443 TRI TA7995A 2N6269 SSD·205 246 546 RFTA7615 T4104D SSD·206 99 443 TRI TA7996 D1201F SSD·206 278 495 RECTTA7616 T4114B SSD-206 99 443 TRI TA7999 40820 SSD-201 724 464 MOS/FET

TA7617 T4114D SSD·206 99 443 TRI TA8000 40821 SSD·201 724 464 MOS/FETTA7618 T4103B SSD·206 99 443 TRI TA8001 40822 SSD-201 732 465 MOS/FETTA7619 T4103D SSD-206 99 443 TRI TA8002 40823 SSD-201 732 465 MOS/FETTA7620 T4113B SSD-206 99 443 TRI TA8004 2N6077 SSD-204 318 492 PWRTA7621 T4113D SSD-206 99 443 TRI TA8005 2N6079 SSD·204 318 492 PWR

TA7626A HC2000H SSD-204 555 566 HYB TA8007 2N6479 SSD-204 454 702 PWRTA7642 T4105B SSD-206 99 443 TRI TA8007B 2N6480 SSD·204 454 702 PWRTA7643 T4105D SSD·206 99 443 TRI TA8100 2N6481 SSD-204 454 702 PWRTA7644 T4115B SSD-206 99 443 TRI TA8100B 2N6482 SSD·204 454 702 PWRTA7645 T4115D SSD·206 99 443 TRI TA8104 40915 SSD-205 325 574 RF

TA7646 T6405B SSD-206 114 487 TRI TA8158 S3703SF SSD206 194 522 SCRTA7647 T6405D SSD·206 114 487 TRI TA8159 S3702SF SSD-206 194 522 SCRTA7648 T6415B SSD-206 114 487 TRI TA8160 D2103SF SSD-206 298 522 RECTTA7649 T6415D SSD-206 114 487 TRI TA8161 D2103S SSD-206 298 522 RECTTA7650 T6405B SSD-206 114 487 TRI TA8162 D2101S SSD·206 298 522 RECT

TA7651 T6405D SSD-206 114 487 TRI TA8172 40970 SSD-205 359 656 RFTA7652 T6414B SSD·206 114 487 TRI TA8197 T6400N SSD-206 55 593 TRITA7653 T6414D SSD-206 114 487 TRI TA8198 T6410N SSD·206 55 593 TRITA7654 T2304B SSD-206 41 441 TRI TA8199 T6420N SSD·206 55 593 TRITA7655 T2304D SSD-206 41 441 TRI TA8201 2N6388 SSD-204 538 610 PWR

TA7656 T2305B SSD·206 41 441 TRI TA8202 2N6386 SSD-204 538 610 PWRTA7657 T2305D SSD·206 41 441 TRI TA8210 2N6106 SSD·204 177 676 PWRTA7669 3N187 SSD-201 690 436 MOS/FET TA8211 2N6108 SSD·204 177 676 PWRTA7670 S6420A SSD-208 218 578 SCR TA8212 2N6110 SSD·204 177 676 PWRTA7673 2N6078 SSD-204 318 492 PWR TA8231 2N6293 SSD·204 177 676 PWR

TA7679 40837 SSD-205 298 497 RF TA8232 2N6291 SSD-204 177 676 PWRTA7680 40941 SSD-205 342 554 RF TA8236 40936 SSD·205 333 551 RFTA7684 3N200 SSD-201 698 437 MOS/FET TA8242 40841 SSD·201 739 489 MOS/FETTA7686 40893 SSD·205 304 514 RF TA8247 40887 SSD·204 278 508 PWRTA7706 2N6105 SSD-205 221 504 RF TA8248 40885 SSD-204 278 508 PWR

TA7707 2N6104 SSD·205 221 504 RF TA8249 40886 SSD·204 278 508 PWRTA7719 2N6211 SSD-204 312 507 PWR TA8323 2N6488 SSD·204 226 678 PWRTA7739 2N6175 SSD-204 278 508 PWR TA8324 2N6487 SSD·204 226 678 PWRTA7740 2N6176 SSD-204 278 508 PWR TA8325 2N6486 SSD-204 226 678 PWRTA7741 2N6107 SSD-204 177 676 PWR TA8326 2N6491 SSD-204 226 678 PWR

TA7742 2N6109 SSD-204 177 676 PWR TA8327 2N6490 SSD·204 226 678 PWRTA7743 SSD·204 l>SD·204 177 676 PWR TA8328 2N6489 SSD·204 226 678 PWRTA7752 T8430B SSD-206 130 549 TRI TA8330 2N6213 SSD·204 312 507 PWRTA7753 T8430D SSD·206 130 549 TRI TA8331 2N6214 SSD-204 312 507 PWRTA7754 T8430M SSD-206 130 549 TRI TA8340 41038 SSD·205 397 679 RF

TA7755 T8440B SSD·206 130 459 TRI TA8343 2N6478 SSD-204 83 680 PWRTA7756 T8440D SSD-206 130 549 TRI TA8344 40894 SSD-205 309 548 RFTA7757 T8440M SSD·206 130 549 TRI TA8345 40895 SSD·205 309 548 RFTA7782 2N6292 SSD-204 177 676 PWR TA8346 40896 SSD-205 309 548 RFTA7783 2N6290 SSD-204 177 676 PWR TA8347 40897 SSD-205 309 548 RFTA7784 2N6288 SSD·204 177 676 PWR TA8348 2N6385 SSD-204 532 609 PWRTA7802 D12018 SSD·206 278 495 RECT TA8349 2N6383 SSD-204 532 609 PWRTA7803 D1201D SSD-206 278 495 RECT TA8352 2N6372 SSD-204 170 675 PWRTA7804 D1201M SSD·206 278 495 RECT TA8353 2N6373 SSD-204 170 675 PWRTA7805 D1201N SSD-206 278 495 RECT TA8354 2N6374 SSD·204 170 675 PWR

TA7806 D1201P SSD-206 278 495 RECT TA8357 T28508 SSD·206 79 540 TRITA7821 S6400N SSD-206 218 578 SCR TA8358 T2850D SSD·206 79 540 TRITA7823 S6410N SSD-206 218 578 SCR TA8405 2N6477 SSD-204 83 680 PWRTA7825 S6420N SSD·206 218 578 SCR TA8407 2N6268 SSD-205 246 546 RFTA7852 2N5917 SSD·205 158 425 RF TA8411 D2406A SSD-206 318 663 RECT

TA7920 2N5992 SSD-205 189 451 RF TA8412 D24068 SSD-206 318 663 RECTTA7921 2N5993 SSD-205 194 452 RF TA8413 D2406D SSD·206 318 663 RECTTA7922 2N5995 SSD-205 205 454 RF TA8414 D2406M SSD-206 318 663 RECTTA7923 2N5996 SSD-205 210 455 RF TA8415 D2412A SSD·206 326 664 RECTTA7936 40819 SSD-201 704 463 MOS/FET TA8416 D24128 SSD-206 326 664 RECT

TA7937 T84508 SSD·206 130 549 TRI TA8417 D2412D SSD·206 326 664 RECTTA7938 T8450D SSD-206 130 549 TRI TA8418 D2412M SSD·206 326 664 RECTTA7939 T8450M SSD-206 130 549 TRI TA8419 D2520A SSD·206 334 665 RECTTA7941 40934 SSD·205 329 550 RF TA8420 D25208 SSD·206 334 665 RECTTA7943 40909 SSD-205 321 547 RF TA8421 D2520D SSD·206 334 665 RECT

TA7982 40940 SSD-205 337 553 RF TA8422 D2520M SSD-206 334 665 RECTTA7984 D2540A SSD-206 345 580 RECT TA8425 R47M15 SSD-205 407 605 RFTA7985 D25408 SSD·206 345 580 RECT TA8428 2N6254 SSD-204 102 524 PWRTA7986 D2540D SSD-206 345 580 RECT TA8429 2N6253 SSD-204 102 524 PWRTA7987 D2540M SSD-206 345 580 RECT TA8430 2N6258 SSD-204 141 525 PWR

508

Developmental Number-to-Commercial Number Cross-Reference IndexComrn. DATA· File Product Comm. OATA- File ProductDey. No. BOOK Page Dav. No. BOOK PageNo.

Vol. No. No. Line No. Vol. No. No. line

TA8431 2N6257 550-204 141 525 PWA TA8650 41028 550-205 390 640 AFTA8432 2N6259 550-204 149 526 PWA TA8651A HC2500 550-204 749 681 HYBTA8433 2N6261 550·204 45 527 PWA TA8656 2N3656 550·206 245 724 5CATA8434 2N6260 550-204 45 527 PWA TA8657 2N3658 550·206 245 724 5CATA8435 2N6262 550·204 133 528 PWA TA8709 2N6468 550·204 170 675 PWA

TA8436 2N6264 550·204 69 529 PWA TA8710 2N6467 550-204 170 675 PWATA8437 2N6263 550-204 69 529 PWA TA8712 A47M10 550·205 407 605 AFTA8439 40898 550-205 313 538 AF TA8713 A47M13 550-205 407 605 AFTA8440 40899 550-205 313 538 AF TA8719 41008 550·205 373 616 AFTA8442 2N6472 550·204 217 677 PWA TA8720 41009 550-205 373 616 AF

TA8443 2N6471 550-204 217 677 PWA TA8721 41010 550-205 373 616 AFTA8444 2N6473 550·204 177 676 PWA TA8722 2N6476 550-204 177 676 PWATA8445 2N6475 550-204 177 676 PWA TA8723 2N6474 550·204 177 676 PWATA8485 2N6387 550-204 538 610 PWA TA8724 2N6469 550·204 217 677 PWATA8486 2N6384 550·204 532 609 PWA TA8726 2N6470 550·204 217 677 PWA

TA8493 40971 550-205 359 656 AF TA8746 2N6393 550-205 270 628 AFTA8504 T2500B 550-206 49 615 TAl TA8747 2N6390 550-205 261 626 AFTA8505 T25OO0 550-206 49 615 TAl TA8748 ACA2oo3 550-205 261 626 AFTA8559 40954 550-205 346 579 AF TA8749 2N6391 550·205 265 627 AFTA8581 40955 550·205 346 579 AF TA8750 ACA2oo5 550·205 265 627 AFTA8562 40967 550-205 355 596 AF TA8751 2N6392 550-205 270 628 AFTA8563 40968 550·205 355 596 AF TA8752 ACA2010 550-205 270 628 AFTA8647 41025 550·205 383 641 AF TA8761 40637A 550-205 295 655 AFTA8648 41026 550-205 383 641 AF TA88455 538005 550·206 199 639 ITATA8649 41027 550·205 390 640 AF TA8846N 538005F 550-206 199 639 ITA

SSO-207 ProductElectrical

Type No. Specification No.Page No. line MIL-S-195001

JAN2N918 78 RF 301JAN2N1482 26 PWR 207JAN2N1486 26 PWR 180JANTX2N1486 26 PWR 180JAN2N1490 27 PWR 208

JAN2N1493 78 RF 247JAN2N2016 27 PWR 248JAN2N2857 79 RF 343JANTX2N2857 79 RF 343JAN2N3055 28 PWR 407

JANTX2N3055 28 PWR 407JAN2N3375 80 RF 341JANTX2N3375 80 RF 341JANTXV2N3375 80 RF 341JAN2N3439 28 PWR 368

JANTX2N3439 28 PWR 368JAN2N3441 29 PWR 369JAN2N3442 29 PWR 370JAN2N3553 80 RF 341JANTX2N3553 80 RF 341

JANTXV2N3553 80 RF 341JAN2N3585 30 PWR 384JANTX2N3585 30 PWR 384JAN2N3772 30 PWR 413JANTX2N3772 30 PWR 413

JAN2N3866 81 RF 398JANTX2N3866 81 RF 398JAN2N4440 80 RF 341JANTX2N4440 80 RF 341JANTXV2N4440 80 RF 341

JAN2N5038 31 PWR 439JANTX2N5038 31 PWR 439JAN2N5071 81 RF 442JANTX2N5071 81 RF 442JAN2N5109 82 RF 453

JANTX2N5109 82 RF 453JAN2N5416 31 PWR 485JANTX2N5416 31 PWR 485JAN2N5672 32 PWR 488JANTX2N5672 32 PWR 488

JAN2N5840 32 PWR 487JANTX2N5840 32 PWR 487JAN2N5918 82 RF 473JAN2N6213 33 PWR 461JANTX2N6213 33 PWR 461

Subject Index

DATA- Page DATA- Page

A BOOK Nos. BOOK Nos.

AC-DC isolation (AN-4537) 206 449 Amplifier, FM detector. at preamplifierAC line isolation (AN-6141) 206 474 integrated-circuit (technical data,

F;le Nos. 318. 3191 201 498.506Active filter, integrated-circuit (File No. 537) 201 47AC voltage regulators. thyristors (AN·3886) 206 416

Amplifier. gain-controlled, integrated-circuitIICAN-40721 202 95

Adders, scaling (leAN-SOlS) 202 45 Amplifier, if, integrated-circujt (ICAN-5036) 202 145Admittance parameters, short-circuit (ICAN·50221 202 113 Appl;cat;ons IICAN-50361 202 150AGC !ICAN-65441 202 333 Characteristics (ICAN-5036) 202 148

Alarm system, intrusion lICAN·6294) 202 294 Circuit description (ICAN-5036l 202 145

Alpha. total IAN·62151 204 857Operating modes (ICAN-50361 202 145Technical data (File No. 1231 201 256

Aluminum TO-3 packages, hermeticity evaluation of Amplifier. narrow-band. tuned. integrated-circuitIAN-6071l 207 56 IICAN·5030) 202 142

Engineering problem (AN-6071) 207 57 Amplifier. d. integrated-circuit (ICAN-5296) 202 98.100Failure analysis (AN-6071) 207 56Fa;lure data IAN-6071l 207 56 Amplifier, servo, integrated-circuit (ICAN-5766) 202 198

Thermal-cycling test results tAN-6071 I 207 57 Amplifiers, integrated·circuit:AM broadcast receivers (ICAN-6022) 202 319 Aud;o IICAN-5037. 57661 202 154.194

AM modulator, integrated-circuit (File No. 537) 201 48 Dr;ver IICAN-57661 202 197Frequency-shaping (ICAN-5015) 202 44

AM radio. integrated circuit for (ICAN·6022) 202 318 Operational 202 14-86App!;cat;ons !ICAN·60n) 202 319 Output IICAN-67241 202 345Circuit description (ICAN·6022) 202 318 Power IICAN-57661 202 191

AND-OR bi-phase pairs, COS/MOS triple R F I ICAN-53371 202 167(technical data. File No. 5761 203 191 V;deo IICAN-50151 202 40

Amplification. sound·carrier (ICAN-6544) 202 333 W;de-band IICAN-5338. 5766. 59771 202 177.195

Amplifier array, general-purpose. integrated- Amplifier. tint-control, integrated-circuit 199.205

circuit (technical data, File No. 5601 201 446 IICAN-67241 202 349

Amplifier array. integrated-circuit, (I CAN-4072) 202 88 Amplifier, twin-T, bandpass OCAN-5213) 202 43Circuit applications (I CAN-4072) 202 92 Amplifier. video, integrated-circuitCircuit description (ICAN-4072) 202 88 I ICAN-5037. 5338. 50151 202 157.186Gain-frequency response (ICAN-40721 202 90 Amplitude modulation (AN-4421 I 205 453Noise voltage and current (ICAN-4072) 202 92 AM receiver subsystem, integrated-circuitOutput swing vs. supply voltage (ICAN-4072) 202 92Quick selection chart 201 14 (technical data, File Nos. 560. 561) 201 40,446.

Stability requirements (ICAN-4072) 202 90 455Analog or digital signals, transmission and

Amplifier array. integrated-circuit. ac multiplexing of (lCAN-6601) 203 433(technical data, File Nos. 377, 387) 201 247.432 AND-OR gates. COS/MOS, triple bi-phase pairs

Amplifier array, ultra-high-gain. wide-band, (technical data, File No. 576) 203 191integrated-circuit (technical data. AND-OR select gate COS/MOS quad IICAN-66001 203 427F;le No. 274) 201 243

AND-OR select gate, COS/MOS quadAmplifiers. audio. circuits (File Nos. 642-6501 204 558·635 (technical data, File No. 479) 203 100Amplifier. broadband 1118-to-136-MHzl. Anthmetlc unit. COS/MOS {ICAN-6600l 203 427

4-watt IPEPI: CirCUit description (lCAN-6600l 203 427Design considerations IAN-3749l 205 421 Operation (ICAN-66001 203 428Load-mismatch test (AN-3749) 205 419 Performance data (ICAN-6600) 203 432Output power and modulation (AN-3749) 205 419 Arithmetic arrays. COS/MOS (ICAN-6600) 203 427Performance and adjustment (AN-37491 205 423

Amplifier. broadband. d, linear, push-pull. Anthmetic unit (lCAN-6210l 203 397

150-watt PEP IAN-4591l 205 469 Arrays, integrated-circuitAmplifier circuit, broadband. uhf (AN-60101 205 475 Application notes on 202 88-106

Technical data 201 118-254Amplifier circuits. general·purpose (AN-45901 202 409 Astable multivibrator. integrated-circuitAmplifier, class B. integrated-circuit IICAN-4072.5641l 202 59.93

IICAN·5296.57661 202 99: 193 Astable multivibrator, CaS/MaS (ICAN-62671 203 407Amplifier. control, and special-function Attenuators (AN-4590) 202 408

integrated circuits: Audio amplifier, integrated-circuit (ICAN-50371 202 154Application notes on 202 108-209 Capacitor-coupled cascaded circuitsQuick selection chart 201 16 IICAN-50371 202 157Technical data 201 255-430 Circuit description (ICAN-50371 202 154

Amplifier, dc, integrated-circuit (ICAN·50301 202 134 Direct-coupled cascaded circuits (ICAN-50371 202 155Applications (ICAN-5030) 202 140 Technical data (File No. 126) 201 313Circuit description (ICAN-5030) 202 134 Audio amplifiers, integrated-circuit (lCAN-5766) 202 194Operat;on IICAN-50301 202 134 Audio amplifier, line-operated tAN-30651 204 770Technical data (File No. 121) 201 288

Amplifier. differential detector. dc amplifier. Audio driver, integrated-circuit:

and voltage regulator, integrated-circuit Dual-supply circuit (I CAN-5037) 202 156

(Technical data, File No. 396) 201 490 Single-supply circuit (ICAN-5037) 202 157Autodyne converter. integrated-circuit (I CAN-5337) 202 167

A mpl if ier-discriminators. integrated-c ircuit Automatic-fine-tuning systems, integrated·circuit(technical data, File No. 129) 201 471IICAN-58311 202 324

Amp!;f;er. feedback !ICAN-50301 202 141 Automatic shut-off and alarm system (ICAN-65381 202 272Amplifier-filter. high-gain (ICAN-65381 202 273 Audio power transistors. special (technical data) 204 558-689

Subject Index

DATA- Page DATA- PageBOOK Nos. BOOK Nos.

Avalanche breakdown: Capture ratio IICAN-53801 202 315Common*base IAN-6215) 204 856 Case-temperature effects (AN-4774) 205 473Common-emitter (AN-62151 204 857 Case-temperature effects 207 71

Avalanche breakdown vol tage, rf 207 71 Characteristics of CaS/MOS integrated circuitsAvalanche multiplication (AN·62151 204 856 (chart) 203 8

Chips (technical datal:CaS/MOS integrated-circuit (File No. 517) 203 307Linear integrated-circuit (File No. 516) 201 590Power-transistor (File No. 632) 204 738

Choppers (AN-4590) 202 407

B Chroma amplifier, integrated-circuit(technical data. File No. 468) 201 554

Balanced detector. integrated-circuit (ICAN-5831) 202 324 Chroma demodulator, integrated-circuitBalanced modulator. integrated-circuit {/CAN-52991 202 102 (technical data, File Nos. 466, 468) 201 537,557

Ballasting circuits, solid-state (AN-3616) 204 778 Chroma signal processor, integrated-circuit

Bandpass amplifiers (ICAN-52131 202 53(technical data, File Nos. 466, 468) 201 534,550

Bandpass shaping IICAN-65441 202 333Chopper circuits, MOS-transistor (AN-3452) 202 365

Basic chopper circuits (AN-3452) 202 365Base-to-emitter voltage 207 15 Basic MOS chopper circuits (AN-3452) 202 366Bass roll-off (I CAN-584 11 202 330 Equivalent circuit of MOS chopper (AN-3452) 202 368BCD data, conversion of (ICAN-6294) 202 291 Ideal chopper characteristics (AN-34521 202 365

Beam-lead (sealed-junction) IC's (technical Relative merits of available devices (AN-3452) 202 365Typical circuits (AN-3452) 202 370data, File No. 515) 201 605 Use of MOS transistors in choppers (AN-3452) 202 366

Bilateral switch, COS/MOS quad (ICAN-6601l 203 433 Circuit factor charts for thyristorsDigital control of signal gain, frequency, (SCR's and Triacs, AN-35511 206 375

and impedance (ICAN-66011 203 438 Current-Ratio curves (AN3551) 206 375Features (ICAN·66011 203 433 Full-wave ac triac circuit (AN-3551) 206 376Logic functions (ICAN-6601) 203 437 Full-wave dc SCR or Triac circuit (AN-35511 206 377Multiplexing/demultiplexing (ICAN-6601) 203 438 Full·wave SCR circuit (AN-35511 206 375Operation (ICAN-6601l 203 433 Per cent ripple in load (AN-35511 206 379Sample-hold applications (ICAN-66011 203 442 Three-phase half-wave SCR circuit (AN-3551) 206 378Switch and logiC;applications lICAN-6601) 203 437Technical data (File No. 479) 203 84 Clocked D latch, COS/MOS quad

Binary counter (ICAN-6166) 203 369(technical data, File No. 589) 203 210

Clock/timer, battery-operated,Bi-phase pairs, AND-OR, COS/MOS (technical Digital-display, COS/MOS:

data, File No. 576) 203 191 Applications (ICAN-6733) 203 482Bi-polarity comparator (ICAN-6732) 202 84 Circuit operation (ICAN-6733) 203 472Bistable multivibrator (ICAN-5641) 202 61 Display-driver circuits (ICAN-6733) 203 474

Bridge circuits, SCR (AN-42421 206 438 Performance characteristics IICAN-6733) 203 472

Bridge rectifier (AN-4673) 204 826Coaxial-line rf power amplifier IICAN-6733) 205 475

Broadband rf circuit design IAN-4421) 205 455Coaxial-package transistors (ICAN-6733) 205 481

Broadband rf operation (AN-4774) 205 472 Collector current, reverse 207 15

Broadband rf power amplifier (AN-3755) 205 429 Collector-to-emitter saturation voltage 207 15

Broadband transistor rf amplifier (AN·37491 205 419Collector leakage currents 207 15

Bulk leakages 207 16Broadband uhf amplifier IAN-6010) 205 479,483 Surface leakage 207 16Broadband uhf circuit, design approach (AN-6010) 205 477

Color demodulator, integrated-circuit IICAN-67241 202 345Broadcast receivers, AM (ICAN-60221 202 318 Application of (ICAN-6724) 202 352Buffer, COS/MOS Quad, true/complement Demoqutation and matrix (ICAN-67241 202 346

(technical data, File No. 572) 203 203 Demodulator preamplifier lICAN-67241 202 348Buffers/converters, COS/MOS hex Filtering capacitors lICAN-6724) 202 348

(technical data, File No. 479) 203 54 Output amplifiers lICAN-6724) 202 345Buffer, output (ICAN-62101 203 399 Tint-control amplifier (ICAN-6724) 202 349

Bulk leakages 207 16 Color matrix, integrated-circult (ICAN-6724) 202 346

Burst (popcorn) noise, measurement of lICAN-67321 202 79 Color system, RGB (ICAN-67241 202 352Pass-fail criteria (ICAN-6732) 202 82 Color TV receivers, if system for,Test conditions (ICAN-67321 202 82 integrated-circuit (I CAN-6544) 202 338Test configuration OCAN-6732) 202 79 Colpitts oscillator, integrated-circuit (ICAN-4072) 202 93Test-system circuits lICAN-6732) 202 83 Common-mode gain (ICAN-S015) 202 38

Bus register, COS/MOS MSI, 8-stage Common-mode rejection (ICAN-5038) 202 161(technical data, File No. 575) 203 169 Common-mode rejection ratio

(ICAN-5022, 5038, 50151 202 38,118,161

Comparator;Bi-polarity IICAN-67321 202 84DC (ICAN-56411 202 61

C Micropower IICAN-66681 202 76Phase IICAN-67161 203 465

Capacitor-input circuits, design of (AN-3659) 206 380 Commutating dv/dt (AN-61411 206 472

Constant-current sources (AN-4590)Control circuits, general (AN-6141)Controlled solder processControl systems, triac (ICAN-6294)Conversion, digital-to-analog (ICAN-60001Converter, ringing-choke (AN-36161Cooking-range control (AN-6096)

Design and functionConsiderations (AN-6096)Top-burner controls (AN-6096)Oven/broiler controls (AN-60961Central processor (AN-6096)

COS/Mas chips (technical data, File No. 517)COS/MOS chips;

Handling of (ICAN-60001Storing of IICAN-60001

caS/MOS CD4000A slash-seriestypesscreened to MIL-STD-883 IRIC-102BI

Electrical-test and delta limits (RIC-102BlEnvironmental sampling inspections (RIC-102B)Final electrical tests (RIC-102B)Ordering information (RtC-102B)Part-number code (RIC-102B)Product-flow diagram (RIC-102B)Screening levels, description of (RIC-102BlTotal lot screening, description of (RIC-102Bl

CaS/MaS digital integrated circuits (Title pagelApplications informationFunctional diagramsGeneral featuresTechnical data

CaS/MOS IC's for low-voltage Applications(technical data, File Nos. 479, 5031

CaS/MaS integrated circuits, functional diagramsCOS/MOS integrated circuits, general features

IFile No. 4791CaS/MaS integrated circuits, high-reliabilityCaS/MOS integrated circuits, typical

characteristics chartCOS/MOS life-test dataCaS/MaS logic gates noise immunity of flCAN-61761COSIMOS MIL-M-38510 CD4000A series types

IRIC-1041Electrical sampling inspection (R IC-1 04)Environmental sampling inspection (RIC-104lFinal electrical tests (RIC-1041Processingand screening requirements

IRIC-1041Product classification guide (RIC-1041Product flow diagram (RIC-1041Product-number code (RIC-1 041Screening levels (RIC-1041Specification numbers (RIC-104)

CaS/MaS power-supply considerations (ICAN-65761COS/MOS switch IICAN-60801Counter, CaS/MaS binary/ripple, 12-stage

(technical data, File No. 624)Counter, COS/MOS. 21-stage (File No. 5721Counters, CaS/MaS, applications of:

Decade, 7-segment-output (ICAN-6733)Divide-by-N (ICAN-67161Divide-by-R IICAN-67161Divide-by-12I1CAN-67331Divide-by-60 IICAN-67331Fixed, single-stage, divide-by-N Programmable,

multidecade, Divide-by-N (ICAN-649B)Counter, CaS/MaS, fixed and programmable,

Design of IICAN-64981Counters, COS/MOS MSI, design and

applications of lICAN-6166)

DATA- PageBOOK Nos.

202 408206 473207 18202 294203 340204 779206 462

206 462206 462206 463206 466203 307-322

207 519207 520

207 524207 528207 529207 528207 526207 526207 524207 525207 527203 1203 334-487203 10-21203 22-24203 28-322

203 29.120203 10-21

203 29207 179,182

203 8-9207 184203 384

207 530207 533207 534207 533

207 531207 534207 530207 534207 530207 533203 422203 347

203 197203 206

203 472203 460203 464203 483203 483

203 417

203 415

203 368

Counters, CaS/MOS (technical data):Binary, 7-stage (File No. 503) 203Decade IFile No. 5031 203Divide-by-N IFile No. 4791 203Up/down, presellable IFile No 5031 203

Counter/dividers, COS/MaS, applications of:Decade IICAN-61661 203Divide-by-81ICAN-61661 203

Counter-latch-timer control circuit (ICAN-6732) 203Cross-modulation distortion (ICAN-5022) 202Crosstalk IICAN-61761 203Crystal oscillators:

Bipolar integrated-circuit (ICAN-5030) 202COS/MOS integrated-circuit IICAN-67161 203

Current density, effect on reliability 207Current gain 207Current limiting, foldback (AN-4558) 204Current mirrors (ICAN-6668) 202Current-ratio curves (SCR's and triacs, AN-3551) 206Currents, collector leakage 207Current sourt;e, diode-transistor (lCAN-666B) 202Curves, rf power-transistor power-frequency 205

Data-gathering and processing system (ICAN-6210)Arithmetic unit (ICAN-62101Control unit t1CAN-62101Description (ICAN-6210)Digital processor (ICAN-62101Input signal conditioning and

transmission (ICAN-6210)Memmy IICAN-62101Output buffer IICAN-62101Output transmitter (ICAN·62101Receiver IICAN-62101

DC amplifier, integrated-circuit (ICAN-50301Applications IICAN-50301Circuit description (ICAN-5030)Operation (ICAN·5030)Technical data (File No. 1211

DC power supply, ac voltage-regulated (AN·3822)DC safe areaDC safe area (power transistors, AN4774)Decade counters, CaS/MaS, 7-segment

output IICAN-67331Decoder, COS/MOS, BCD-to-decimal

(technical data, File No. 5031Decoder-Drivers, MSI, BCD-to-7-segment (ICAN-62941

Fail-safe circuit HCAN-6294)Logic description (ICAN-6294)Logic diagram (ICAN-62941Multiplex operation (ICAN-6294)Operating characteristics (ICAN-62941Static-drive applications (ICAN-62941,Technical data (File No. 392)

Decoder stereo multiplex, integrated-circuit(technical data, File No. 502)

Deflection circuit, magnetic (AN-30651Delayed age IICAN-65441Delta tests or limitsDemodulation color-signal (ICAN-6724)Demodulator, color, integrated-circuit lICAN-6724)Demodulator preamplifier, integrated-

circuit (ICAN-67241

120126-134

95-99146-152

203 392203 397203 401203 392203 394

203 393203 396203 399203 399203 395,400202 134202 140202 134202 134201 288206 413207 69205 471

203 473

203 141202 291202 299202 291202 293202 299202 294202 296201 403

201 440204 768202 333,334207 187202 346202 345

202 348

I\lOS. tlUUK Nos.E

Derating curve, power-transistor 207 16 Economics, amplifier (AN-30651 204 769

Detection, sound-carrier (ICAN-6544l 202 333 Effect of temperature on silicon transistors 207 15

Diacs, silicon bidirectional: Electric heat application IICAN-6182l 202 254Technical data (File No. 577) 206 350-351 Electric heat application (ICAN·6182) 206 488Use of for thyristor triggering (AN-4242) 206 437 Electromigration 207 72Voltage-current characteristics (AN-4242) 206 438

Emitter ballasting (AN-4774) 205 472Differential-amplifier array, dual independent,

Emitter ballast resistance (AN-4591) 205 463integrated-circuit (technical data,File Nos. 388,611) 201 226,234 Emitter-site ballasting 207 67,70

Differential amplifiers, integrated·circuit, Envelope detector (ICAN-50361 202 151Basic configuration for llCAN-5380) 202 311 Epitaxial-base power transistors (selection chart) 204 13-15

Differential amplifiers, integrated-circuit Epitaxial-base power transistors, (technical datal 204 169high-reliability types (technical data. External noise (ICAN-61761 203 384File Nos. 705, 714) 207 196,203

Differential/cascode amplifiers, integrated-circuit(technical data, File No. 382) 201 318

Differentiators, integrated-circuit (ICAN·5015) 202 45Diffused-junction n-p-n power transistors F{technical datal 204 493Diffusion current 207 16 False turn-on (of thyristors, AN-47451 206 451Digital-clock prototypes, CaS/MaS IICAN-6733J 203 484 Fast-recovery silicon rectifiers (File No. 5801 206 345Digital-display clock, CaS/MaS IICAN-6733) 203 472 Fast-turn-off silicon controlled rectifiersDigital-display clock/watch confIguration, (Technical data, File No. 408) 206 238

CaS/MaS IICAN-6733J 203 483 Feedback amplifier, integrated·circuit, cascadedDigital-display devices (ICAN-67331 203 476 RC-cQupled IICAN-50301 202 141Digital·display metering application, Feedback factor IICAN-58411 202 329

CaS/MaS IICAN-6733J 203 472 Feedback-type volume-control circuit (ICAN-58411 202 329Digital-display timer, COS/MOS (ICAN-67331 203 472 Ferrite cores (AN-4591) 205 466Digital frequency synthesizer, COS/MOS lICAN-67161 203 457 Filament pre-heatIng circuit (AN4537) 206 465Digital meter applications, COS/MOS (lCAN-6733) 203 489 Filter, actIve, Integrated-cIrcuit (File No. 537) 201 47Digital signals, transmission and Filters, Interstage (ICAN-53801 202 313

multiplexing of (ICAN-6601) 203 433Final Qualification 207 107

Digital timer/clock/watch applications, Flanged-case silicon rectifiers (technicalCaS/MaS IICAN-6733J 203 477Digital·to·analog conversion, general

data, File Nos. 3, 5, 41, 91) 206 252,255,265,294

considerations (ICAN·60aO) 203 342Flasher circuit, thyristor (AN-45371 206 448

Digital-to-analog converter, COS/MOS (ICAN·6080) 203 346Flashover current (AN-45371 206 444

Digital·to·analog switch, CaS/MaS (ICAN-6080l 203 342Flip-flop, caS/Mas dual D-type:

Diode Array. integrated-circuit (ICAN-52991 202 101 Technical data (File No. 479) 203 68Applications (ICAN-5299) 202 102 Use of in arithmetic unit IICAN-6600) 203 427Circuit configuration (ICAN-52991 202 101Operating characteristics (ICAN-52991 202 101 Flip-flop, COS/MOS dual J-K master-slaveTechnical data (File Nos. 236, 3431 201 118,122 (technical data, File No. 5031 203 135

Diodes, light-emitting (ICAN-6733l 203 476 Fluorescent readouts. low-voltage vacuum

Display-lamp turn-on characteristics (ICAN-6294) 202 295 IICAN-6733) 203 480

Display output OCAN-62101 203 398 FM broadcast receivers, integrated circuits for

Dissipated-limited region 207 16 IICAN-52691 202 304

Double-tuned interstage filter (ICAN-53801 202 313 FM front-end cirCUits IIC's, ICAN·5269, 5337) 202 174,306,307

Down-conversion, heterodyne (ICAN·6716) 203 457,467 FM if amplifier and detector, integrated-circuitDown-converter, heterodyne, COS/MOS (ICAN-67161 203 458 IICAN-5269) 202 309Driver amplifiers, integrated-circuit (ICAN-5766) 202 197 FM if amplifier, limiter, and diSCriminator,Driver, audio, integrated circuit (ICAN·5037) 202 156,157 integrated-circuit (ICAN-52691 202 308Driver circuits for digital displays, types of FM if amplifier-limiter, detector, and audio

IICAN-6733J 203 474 preamplifier, integrated-circuitDriver for 600-ohm balanced-line (lCAN-4072) 202 95 (technical data, File No. 429) 201 462D-type latch, clocked, COS/MOS quad FM if strip integrated-circuit (ICAN-53801 202 315

(technical data, File No. 589) 203 210 FM if system, integrated-circuitDvldt suppression (in thyristor circuits, AN-4745) 206 451 (technical data, File No. 5611 201 455Dual Darlington array, integrated·circuit FM receiver synthesizers, COS/MOS (ICAN-6716) 203 450

(technical data, File No. 2751 201 158 Prescaler system design (ICAN·6716) 203 450Dual differential amplifiers (technical System requirements (ICAN·6716) 203 450

data, File No. 3611 201 329 FM synthesizer system, COS/MOS (ICAN-67161 203 459Dynamic performance of AFT system (ICAN-58311 202 326 FM tuner, integrated-circuit (lCAN·5269) 202 305

Subject Index

OATA- Page OATA- PageBOOK Nos. BOOK Nos.

FM tuner using MOS-transistor rf amplifier (AN-34531 202 372 Ground-line noise (ICAN·6716) 203 457Circuit considerations (AN-3453) 202 372 Group A inspections, power-transistor 207 23Performance (AN-3453) 202 374 Gyrator, integrated-circuit (File No. 537l 201 47RF stage design IAN-34531 202 374

FM tuner using MOS-transistor rf amplifier andmixe, IAN-35351 202 378

Conversion transconductance, calculation ofIAN-35351 202 382

Mixer-circuit considerations (AN-3535) 202 380Oscillator-circuit considerations (AN-3535) 202 381Over-all tuner performance (AN-35351 202 381 HPerformance features of MOS transistors

IAN-35351 202 378 Half-wave motor controls (AN-34691 206 364RF-circuit considetations (AN-3535l 202 380 Unregulated IAN-34691 206 365Tuner design (AN-35351 202 379 Regulated IAN-34691 206 366

Forward-bias second breakdown 207 13 Half-wave SCR circuit (AN-3551) 206 375

Forward-bias second breakdown, testing for (AN-45731 204 817 Harmonic distortion (ICAN-5037, 5038) 202 156,162

Four-quadrant multiplier, integrated-circuit Hartley oscillator, integrated-circuit (ICAN-4072) 202 93IICAN-66681 202 69 Heat control IAN-36971 206 393

Frequency converter, three-phase 750-watt: Heater control, three-phase (AN-6054) 200 458Circuit description (AN-46731 204 826 Heater regulation (AN-3822) 206 411Inverter (AN-4673) 204 826Logic and driver circuits (AN-4673l 204 826 Hermetic rf transistor packages 207 69

autput transformer (AN-4673) 204 828 Heterodyne down-conversion (ICAN-6716l 203 459,469Performance (AN-4673) 204 830 High-current transistors (technical data,Power supply for (AN4673) 204 826 File No. 462, 525, 5261 204 141,149

Frequency-modulation if amplifiers, integrated- 487circuit IICAN-53801 202 311 High-frequency power transistors

Frequency multipliers, COS/MOS (ICAN-62671 203 414 (technical data, File No. 548) 205 309

Frequency-shaping amplifiers, integrated-circuit High-gain selective building blocks, evolutionIICAN-50151 202 44 IICAN-53801 202 312

Frequency synthesizer, COS/MOS low-power digital High-power generation (AN-3755l 205 431IICAN-67161 203 419 High-,eliability COS/MOS CD4000A

Full adder, COS/MaS four-bit: slash-series types (RIC-102S) 207 524Technical data (File No. 479) 203 49 High-reliability integrated circuits 207 175Use in arithmetic unit (ICAN-6600l 203 427 Applications 207 176,178

Full-wave motor controls (AN-3469) 206 369 Device nomenclature 207 176,177Regulated IAN-34691 206 370 General considerations 207 176Umegulated IAN-34691 206 369 Life-test data, CaS/MaS 207 184

Manufacturing controls 207 176MI L-M-38510 requirements 207 182MI L-STD-883 requirements 207 178Packages 207 176Technical data, COS/MOS types 207 309-518Technical data linear types 207 188-302

GHigh-reliability power transistors 207 12

Application notes on 207 47Electrical considerations 207 12

Gain controlled amplifier, Integrated-circuit JAN and JANTX types 207 22,26-33IICAN-40721 202 95 Processing and screening 207 21

Gain control, rf-amplifier (ICAN-5022) 202 120 Reliability considerations 207 12

Gain, current 207 15Special rating considerations 207 12Technical data on RCA types 207 26-46

Gain equalizer (for uhf amplifier, AN-6010) 205 479 High-reliability power transistorsGarage-door electronic control system (AN-3697) 206 391 (technical data) 207 26-46Gate characteristics (of thyristors, AN-4242) 206 432 High-reliability rf power transistors 207 67Gate, CaS/MaS dual complementary pair plus Design features 207 67

inverter (technical data, File No. 479) 203 43 JAN, JANTX, and JANTXV types 207 74Gate, COS/MOS quad AND-OR select IICAN-61761 203 385 HR-series types, processing and screening 207 74

Gate, CaS/MOS uqad exclusive-ORPremium and ultra-high-reliability types 207 76

(technical data, File No. 503) 203 153Special rating concepts 207 69Technical data 207 78-174

Gate-oxide protection circuit (ICAN-6218) 203 403 High-reliability solid-state devicesGates, COS/MOS quad, 2-input NAND IICAN-66001 203 428 Commercial requirements 207 9Gates, COS/MOS quad 2-input NOR IICAN-66001 203 428 I ndex to RCA types 207 6Gates, CaS/MOS triple AND-OR bi-phase pairs I ntroduction to 207 9

(technical data, File No. 576) 203 191 Military and aerospace requirements 207 9

Gates, high-speed IICAN-52961 202 97Military specifications for 207 10

Series IICAN-52961 202 98 High-reliability terms and definitions 207 185Shunt (ICAN-52961 202 99 High-speed gates IICAN-52961 202 97Series-shunt (ICAN-5296) 202 99 High-speed switching power transistors

Glass-passivated aluminum 207 68 (technical data) 204 404-689

Subject Index


High-voltage application of silicon transistors Integrated-circuit chips, linear(AN-35651 204 773 (technical data, File No. 516) 201 590-604

High-voltage generation (AN3780l 206 406 Integrated-circuit FM, IF amplifiers.High-voltage power transistors (technical data) 204 278-402 design approaches for OCAN-53801 202 312

High-voltage power transistors selection chart 204 16-17 Integrated circuits, COS/MOS digital 203 1

High-voltage regulation (AN·3780) 206 407 Integrated circuit, high-reliability 207 188

Hometaxial-base power transistors (selection chart) 204 10-12 Integrated circuits, linear (bipolar) 201 1

Hometaxial·base power transistors (technical datal 204 26-168 Integrators OCAN-50151 202 45

Horizontal-deflection SCR's and rectifiers Interfacing of COS/MOS devices OCAN-66021 203 445(technical data, File Nos. 354, 522) 206 187,194 Active pull-ups IICAN-66021 203 447

Horizontal deflection system:Bipolar driving COS/MOS IICAN-66021 203 447COS/MOS-bipolar HTL interface OCAN-66021 203 450

For color TV receivers (AN·3780) 206 400 COS/MOS driving bipolar OCAN-66021 203 448Hot-spot thermal resistance (AN·4774) 205 472,474 COS/MOS-ECL/ECCSL interface IICAN-66021 203 454Hot·spot thermal resistance 207 69 COS/MOS-to-N-MOS interface IICAN-66021 203 456Hotspotti~g (AN-47741 205 471 COS/MOS-to-P-MOS interface OCAN-66021 203 455

COS/MOS-TTL/DTL interface IICAN-66021 203 445H R·series rt power transistors Current sinking (ICAN-6602) 203 446,449

(techni.cal data) 207 83-118 Current sourcing (lCAN-6602) 203 446,449Hybrid,circuit operational amplifier Level shifters IICAN-66021 203 454

(tedmical data, File No. 566) 204 744 Resistor, pull-up IICAN-66021 203 446Hybr,.d circuits, power (technical data) 204 744-756 I nterim Qualification 207 187HYbrid combiners (AN-3755) 205 433 Intermodulation distortion IICAN·5037) 202 156Hybrid combiner/dividers (AN·4591) 205 467 I nterstage filters (ICAN-5380) 202 313~vsteresis effect, lamp-dimmer (AN-3778J 206 396 Intrinsic transistor structure (AN-3755J 205 429

Intrusion alarm system, triac (ICAN-6538) 202 272Inverters IAN-3065, AN-35651 204 768,773

Push-pull types IAN-36161 204 779Three·phase bridge types (AN-4673) 204 826

Isolation, ac-dc (AN·4537) 206 449

IF-amplifier circuits, integrated types 97,129,OCAN-5296, 5022, 5036, 5337, 53381 202 150,167,

172,187J

IF amplifier·limiter, FM detector,electronic attenuator, audio driver, inte~rated· JAN and JANTX power transistors 207 20circuit (technical data, File No. 412) 201 514 RCA types 207 20

IF amplifiE!r, integrated·circuit OCAN-5036) 202 145 Processing and screening 207 20Applications IICAN-50361 202 150 JAN, JANTX, JANTXV rf power transistorsCharacteristics (ICAN·5036) 202 148 (technical datal 207 78-82Circuit description (ICAN·5036) 202 145 Junction temperature, effect on reliability 207 72Operating modes (ICAN-5036) 202 145

IF amplifier-limiter. integrated-circuit high·gain,wide·band (technical data, File No. 430) 201 479

IF strips, FM, integrated-circuit (lCAN-5380, 5337) 202 312,173,174

IF system, FM, integrated-circuit(technical data, File No. 561) 201 455 K

IF system, integrated-circuit, black·and-whiteTV receiver OCAN-65441 202 341 Keyed AGC IICAN-65441 202 333,334

IF system, integrated·circuit, for color TVreceiver IICAN-65441 202 336

I HFM (I nstitute of High·F idelity Manufacturers)IICAN-53371 202 173

Incandescents readouts (ICAN·6733) 203 480Induction motor controls (AN·3697) 206 390 LInrush current (AN-45371 206 445Inrush currents (AN-6141) 206 472 Ladder networks, resistance (ICAN-6080) 203 342Insertion loss (ICAN·5380) 202 315 Lamp·dimmer circuits (AN·3778) 206 397Institute of High-Fidelity Manufacturers (lHFM) Double-time constant types (AN-3778) 206 398

OCAN-53371 202 173 Single·time·constant types (AN·37781 206 397Integral·cycle heater control, proportional With over-voltage clamp (AN·3822) 206 412

(AN-36971 206 393 Latch, COS/MOS quad, clocked DIntegrated-circuit arrays: (technical data, File No. 289) 203 210

Application notes on IICAN-4072, 5296, 52991 202 88-106 Latch COS/MOS quad, 3-state NAND R/STechnical data 201 118-254 (technical data, File No. 590) 203 214

Subject Index


Latch. CaS/MaS quad 3-state. NOR R/S Manufacturing Certification 207 186(technical data, File No. 590) 203 214 Matched diodes, ultra·fast. low-capacitance

Latched memory circuit IiCAN-63581 202 271 (technical data, File No. 343) 201 122Level converters. COS/MOS IiCAN-67331 203 474 Matrix:Level detector, COS/MOS IiCAN-6601l 203 444 Rectifier products 206 22

Light-activated control (ICAN~6538) 202 272 SC R products 206 18

IAN-36971 206 389 Triac products 206 14

Light control IAN-36971 206 387 Maximum usable gain (ICAN·65441 202 338

Light-control circuits IAN-3778, AN-4242) 206 394.441 Medium-power p-n-p transistors

Basic triac-diac type IAN-37781 206 396 (technical data. File No. 216) 204 410

Double-time-constant types (AN-3778) 206 397 Medium-power transistors. hometaxial II typesSingle-time-constant types IAN-37781 206 396 (technical data, File Nos. 527, 529) 204 45.69

Light dimmers, triac (AN-3778) 206 395 Mercury-arc lamps:Circuits IAN-37781 206 398 Advantages of IAN-36161 204 777Circuit description (AN-3778) 206 395 Ballasting of IAN-3616) 204 776Hysteresis effect (AN-3778) 206 396 Characteristics of (AN-3616) 204 776Range control (AN~3778) 206 397 Conventional ballasting methods (AN-3616) 204 778RFI suppression (AN-3778) 206 398 Starting current for (AN-3616) 204 785Trouble shooting IAN·37781 206 398 Solid-state ballasting circuits (AN-3616) 204 778

Light-emitting diodes lICAN-67331 203 476 Memory. COS/MOS. preset-channel IICAN-67161 203 470

Light flasher, synchronous (lCAN~61821 202 260 Memory, integrated-circuit, latched (ICAN-65381 202 271lICAN-61821 206 494 Memory senseamplifier, integrated-circLJit,

Lighting systems, relative merits dual~input (technical data, File No. 53'~11 201 395of various types IAN-36161 204 776 Microstripline circuits (AN-4025) 205 445

Limiter, integrated-circuit (ICAN~5337l 202 167 Design of IAN-40251 205 446

Limited~amplifier, integrated ';circuit Mounting arrangement (AN-40251 205 445

IICAN-5831.53381 202 324, 189Performance of (AN-4025) 205 449

Limiter characteristics (of IC rf amplifiers) Microstripline oscillator (AN-3764) 205 442

IICAN-5022) 202 126 Microwave power amplifiers (AN-37641 205 438

Limiting amplifier, integrated-circuit (ICAN-5338) 202 190Biasing arrangements (AN~3764) 205 443Coaxial~line types (AN-37641 205 439

Line Certification 207 186 Device and package construction (AN-37641 205 436Line isolation, ac (AN~6141) 206 474 Design of IAN-37641 205 438Linear amplifier, push-pull 150-watt, Large-signal amplifier operation (AN·3764) 205 438

2-to-30-MHz IAN-4591l 205 469 Lumped-constant, common-base types (AN-3764) 205 444

Linear applications of rf powerPerformance of practical circuits (AN·4025) 205 449

transistors (AN-37551 205 431Power gain (AN·37641 205 443Pulse operation (AN-3764) 205 440

Linear IC arrays (technical datal 201 118-254 Reliability IAN-3764) 205 438Linear IC chips (technical data, File No. 5161 201 590-604 Stripline type (AN-37641 205 440Linear integrated circuits and 201 1 Microwave power oscillators (AN·3764) 205 436

MOS devices 202 1 Basic configuration (AN~3764) 205 441Index to 201 6 Design of IAN-37641 205 441Packages and ordering information 201 23 Device and package construction (AN-3764) 205 436

Linear integrated circuits (CA3000 slash-seriestypes) Lumped-constant type (AN-37641 205 442screened to MIL-STD-883 IRIC-202) 207 303 Microstripline type (AN-37641 205 442

Electrical sampling inspection (RIC~2021 207 307 Reliability IAN-37641 205 438Environmental sampling inspection (RIC-2021 207 308 Wide-band type IAN-37641 205 442Final electrical tests (RIC~2021 207 307 Military specifications 207 10Ordering information (RIC~2021 207 305 MIL-M-38510 207 10Part-number code (RIC-2021 207 305 MIL-S-19500 207 10Product flow diagram (RIC-202) 207 303 Ml L-STD-883 requirements 207 178Screening levels (RIC-2021 207 304 COS/MOS integrated circuits 207 179Total lOt screening (RIC-202) 207 306 Linear integrated circuits 207 180

Linearity (AN~378Q) 206 401 Mixer capabilities (of integrated-circuitLinear mixer, four-channel, rf amplifiers) lICAN-50221 202 123

integrated-circuit (ICAN-4072) 202 93 Mixers IAN-45401 202 411Losser-type volume-control circuit OCAN-58411 202 329 Mixers, integrated-circuit:Loudness contouring (ICAN-58411 202 330 8alanced lICAN-50221 202 123.129Low~resistancesensor (AN-60961 206 465 Four·channellinear (ICAN-40721 202 93

LTPD 207 187 Low-frequency (ICAN-5025) 202 281

LTPD sampl ing plans 207 23 Mixers, MOS·transistor:

Lumped-constant rf power amplifiers (AN-37641 205 444FM-receiver (AN-35351 202 378.380VH F-receiver (AN-3341) 202 362

Lumped-constant rf power oscil1ator (AN-3764) 205 443 Molded-plastic transistors and thyristorsLead forming techniques (AN-4124) 204 790Lead forming techniques (AN-4124) 206 423Mounting IAN-4124) 204 793Mountino (AN·41241 206 426

MThermal-resistance considerations (AN-41241 204 790Thermal-resistance considerations (AN-4124) 206 423Types of packages (AN-4124) 204 789

Magnetic deflection circuit (AN~30651 204 768 Types of packages (AN-41241 206 422

Subject Index ua~ll,.. \..VIIII!:lUldllVII \1L.AI'Il-OLOIJ LU;; 410Gate protection (AN--459'O) 202 404 Compensated circuit (ICAN·6267) 203 411Electrical requirements IAN-459Q) 202 406 Low-power circuit (ICAN-6267) 203 412Applications (AN-4590l 202 403 Monolithic Darlington power transistors

MOS field-effect devices (see MOS field-effect (technical data, File Nos. 594, 563, 609, 610,transistors) 693,6941 204 524-556

MOS field-effect transistors: Monostable multivibrator. integrated-circuitApplication notes on 202 354-418 (ICAN-5641l 202 61Technical data 201 634-752 MOS chopper circuits (AN-3452) 202 370

MOS field-effect transistors, dual-gate-protected MOS/FET's (see MOS field-effect transistors)types: MOS/FET integrated circuits. use in linear

Breakdown mechanism (AN-40181 202 384Cross-modulation considerations IAN-4431) 202 400 circuit applications

Current·handling capability (AN-40181 202 387Electrical requirements (AN-4018) 202 386Gate·protection diodes (AN-4018, AN-4431) 202 386,396,

400Gate-protection methods (ANA018) 202 385Input capacitance and resistance (AN-4018) 202 387 NNoise factor (AN-40181 202 387Operating conditions (AN-4431) 202 396 NAND gates, (positive logic)Power gain (AN-40181 202 387RF applications IAN-4431l 202 396

CaS/MaS (technical data, File No. 4791 203 61

Stability considerations (AN-44311 202 400 NAND R/S latch, 3-state COS/MOSStatic discharge, effect of (AN-4018) 202 384 quad (technical data, File No. 590) 203 214

MOS field-effect transistor, vhf applications: Noise immunity (of caS/MOS logic gates):Biasing requirements (AN-3193) 202 354 (ICAN·61761 203 384Circuit configurations IAN·3193) 202 354 Crosstalk noise immunity (ICAN-6176) 203 388

Operating-point selection fAN-3193) 202 356 External noise immunity, signal-line (ICAN·6176) 203 385AGC methods IAN-31931 202 357 Ground-line noise immunity (ICAN-6176) 203 388R F considerations (AN-3193) 202 357 Power-supply noise immunity (ICAN-6176) 203 386Use of in vhf circuit design (AN-31931 202 358 Types of noise (ICAN·61761 203 384

MOS integrated circuit, Noise performance (of integrated-circuithandling considerations OCAN·60001 207 519 rf amplifiersJ (ICAN-50221 202 116

MOS-transistor vhf mixer, design of (AN-3193) 202 362 Noise-limited amplification llCAN-65441 202 333,336

Motor controller, integrated·circuit (ICAN-5766) 202 198 NOR gates, COS/MOS quad 2-input IICAN-6600l 203 428

Motor controls (AN-3469, AN-36971 206 364,390 NOR gates (positive logic), COS/MOSCircuit components (AN-3469) 206 366-374 (technical data, File No. 479) 203 30Full-wave types (AN-34691 206 369 NOR R/S latch, COS/MOS quad, 3-stateHalf-wave types IAN-34691 206 366 (technical data, File No. 590) 203 214Ratings and limitations (AN-3469) 206 370Regulated IAN·34691 206 367,369 Nuclear radiation, effects of 207 20

Three-phase IAN·60541 206 460 Numitron devices ltCAN·6294) 202 295Unregulated (AN-34691 206 367,369 (ICAN·6733J 203 480

MTTF or MTBF 207 187Multiplex decoder, integrated-circuit, stereo

(technical data, File No. 502) 201 440Multiplexer-decoder integrated-circuit,

linear (ICAN-66681 202 73Multiplexer, integrated-circuit,

three·channel (File No. 537) 201 48 0Multiplexing of analog and digital

signals (ICAN-66011 203 433 Oscillators (AN-4590) 202 411

Multiplex system, integrated-circuit, Oscillators, COS/MOS astable and monostable:two·channel linear (ICAN-66GB) 202 65 Astable multivibrator circu,its (ICAN·6267) 203 407

Multiplier, integrated·circuit (File No. 537) 201 49 Applications IICAN-6267J 203 413

Four·quadrant, analysis of (lCAN·6668) 202 69Compensation for 5O-per-cent duty

Multiplier, integrated-circuit,cycle (ICAN-62671 203 411

four·quadrant (technical data, File No. 534) 201 383Monostable multivibrator circuits (ICAN·6267) 203 410

Multiplier, integrated-circuit,Oscillator, COS/MOS crystal·controlled (ICAN-6716) 203 468

two-quadrant (File No. 537) 201 48 Oscillator, COS/MOS phase-locked,

Multistable circuits, precision (ICAN·6668) 202 74voltage-controlled (ICAN·6267) 203 413

Oscillator, COS/MOS voltage-controlledMultivibrators, COS/MOS (ICAN·62671 203 413

Astable IICAN·62671 203 407Monostable (ICAN-62671 203 407,410 Oscillators, integrated-circuit (ICAN-4072) 202 93

One-shot, basic circuit (ICAN·6267) 203 410 Crystal-controlled (ICAN-5030J 202 140

One-shot, compensated circuit (Ir.AN-6267) 203 411 Modulated (ICAN-5030J 202 140

Multivibrators, integrated-circuit: Oscillator, microstripline (AN-3764) 205 442

Astable (ICAN-4072, 56411 202 93.59 On-off switching circuits IAN-4537) 206 447Bistable (ICAN-5641l 202 61 Operational amplifierMonostable IICAN·5641l 202 61 (technical data, File No. 566) 204 744


lOOK Nos. PBOOK Nos_

Operational amplifiers, high-performance, PDA 207 187integrated-circuit (ICAN-5641) 202 55 Peak-envelope-power rating (AN-45911 205 462

Circuit description (ICAN-5641) 202 55 Phase comparator, COS/MOS IICAN-6166) 203 368Noise figure IICAN-5641) 202 56Phase compensation (ICAN-5641) 202 57 Phase-locked loop. fundamentals of OCAN-61011 203 360

Slewing rate IICAN·56411 202 57 Phase-locked loops, practical digital typesApplications IICAN·56411 202 58 (ICAN·6101) 203 361Technical data (File No. 360) 201 61 Phase-shift transformer, discriminator (ICAN-52691 202 308

Operational amplifiers, high-reliability Photo-coupled isolators (AN·6054) 206 459integrated-circuit types (technical data. Photocurrents 207 20File No. 715) 207 222

Operational amplifiers. integrated-circuitPhoto detector and power amplifier

IICAN·5015, 5213, 5290) 202 34,49, 14(technical data, File No. 421) 201 367

Applications 202 88-352Photo-detector and power amplifier,

Bias current, input (ICAN-52901 202 32integrated-circuit (ICAN-65381 202 269

Characteristics and features chart 201 10Circuit description IICAN-6538) 202 269

Circuit description (ICAN-5015) 202 34Technical data (File No. 421) 201 367

Common-mode gain (ICAN-52901 202 20Typical applications f1CAN-65381 202 272

Common-mode rejection 202 38,50,32 Polycrystalline silicon laver 207 68

lICAN·5015, 5213, 5290) Power amplifiers, broadband, uhf/microwaveDC levels, input and output (ICAN-529Q) 202 29 IAN-4421) 205 451Design criteria f1CAN-52901 202 29 Amplitude modulation IAN-4421) 205 453Equivalent-circuit model (ICAN·5290) 202 21 Cascade and parallel connections IAN-4421 I 205 458External modifications (ICAN-5015) 202 47 Circuit impedances (AN·4421l 205 455Gain-frequency response (ICAN-5015, 5213,5290) 202 37,50,30 Circuit performance (AN-4421l 205 458General considerations (ICAN-5290l 202 14 Evaluation circuit (AN-4421) 205 451Input and output impedances Gain and VSWR control (AN-4421) 205 452

lICAN-5015, 5213, 52901 202 38,50, Hybrid combiners {AN-4421 I 205 453

16,20 Input-circuit design (AN-4421) 205 455

Inverting configuration (ICAN-5290) 202 15 Output-circuit design (AN-4421l 205 453

Load impedance, effect of finite OCAN-5290l 202 21 Package design (AN-4421) 205 451

Noninverting configuration (ICAN·5290) 202 18 Practical circuits (AN-44211 205 458

Offset voltage and current OCAN·529Q) 202 32 Reduction of VSWR IAN·44211 205 451

Operating characteristics (ICAN-5015, 5213) 202 34,49 Power amplifiers, integrated-circuitOutput-power capability IICAN·5290) 202 30 multipurpose wideband (ICAN-5766) 202 191Output-power modifications (ICAN-5015l 202 40 Applications lICAN·5766) 202 194Output swing (ICAN·5015) 202 38 Circuit description (ICAN-57661 202 191Phase compensation (ICAN-5015, 5213, 5290) 202 39,50,29 Operating characteristics (ICAN-5766) 202 194Phase shifts, feedback IICAN-5290) 202 22 Operation (ICAN-5766) 202 191Power-supply stability (ICAN-5290) 202 33Quick-selection chart 201 8 Technical data, (File No. 339) 201 268

Technical data 201 30-116 Power control IAN-42421 206 439

Transfer characteristics (ICAN-5015, 5213) 202 40,50 Power controls, triac, for three-phaseTransfer function OCAN-5290) 202 15,18 systems IAN-6054) 206 456

Operational amplifiers, integrated-circuit, Basic design rules lAN·6054) 206 456application notes on 202 14-86 Circuits lAN-6054) 206 460, 461

Operational amplifiers, integrated-circuit, DC logic circuitry, isolation of (AN-60541 206 458

characteristics and features chart 201 10 Inductive-load systems (AN·6054) 206 460

Operational amplifiers, integrated-circuit Resistive-load systems 206 458

high-output-current (technical data, File No. 360) 201 61 Trigger circuit (AN-6054) 206 456

Operational amplifiers, integrated-circuit Power-frequency curves for rf powerqu ickselection chart 201 8 tranSistors 205 8-10

Operational amplifier, micropower Power·llne noise (ICAN-6176) 203 384integrated-circuit (technical data, File No. 535) 201 52 Power OSCillators (AN-3764) 205 436

Operational transconductance amplifiers, Lumped-constant 205 442integrated-circuit, high-performance: Microstripline 205 442lICAN·6668) 202 63 Wideband 205 442

Amplitude modulation (ICAN-6668) 202 68 Power oscillators, microwave:Applications (iCAN-66681 202 65 Desognof (AN-3764) 205 441Circuit description OCAN-6668) 202 63 Power hybrid circuits:Gain control lICAN-6668) 202 68Multiplexing lICAN-6668) 202 65

Technical data 204 744-756

Technical data (File Nos, 475, 537) 201 30,38 Power hybrid operational amplifiers

Output amplifiers, integrated-circuit (ICAN-6724) 202 345(File Nos. 566, 6811 204 744, 749

Output stages, integrated-circuit (ICAN-6668) 202 74 Power supplies, compact, high·current

Oven control IICAN·6182) 202 255 5-volt, regulated

lICAN·6182) 206 489 Basic design concept (AN-4509J 204 797

Overlay transistor structure 207 67Design example IAN-4509) 204 803Major elements (AN-4509) 204 797

Power supply, bridge-rectifier (AN-46731Power supply considerations for CaS/MaS

devices:AC dissipation characteristics OCAN-6576lAC performance characteristics (lCAN·65761Filtering requirements (ICAN-65761High de source IICAN-65761Quiescent dissipation (ICAN-6576)Regulation requirements OCAN-6576lSystem power, calculation of (l CAN-6576)Switching characteristics (ICAN-6576)

Power supply, regulated 60·watt20-volt IAN-45581

Circuit description (AN-4558)Construction (AN-4558)Design considerations (AN-4558)Foldback current limiting (AN-4558)Performance IAN-45581Voltage regulation (AN-4558)

Power-transistor chips(technical data), (File No. 632l

Power transistors and power hybrid circuitsPower transistors, high-reliabilityPower transistors, selection chartsPower transistors (technical data) :

Epitaxial-base typesHigh-speed switching typesHigh-voltage typesHometaxial-base typesMonolithic Darlington typesSmall-signal low-noise typesSpecial audio power types

Power transistors, thermal-cycling ratingsfor IAN-4612, 4783, 61631

Power transistors, thermal-cyclingrequirements (AN-4612, 4783l

Power transistors, vhfluhf, broadbandpower-amplifier applications of (AN-601o)

Pix-if system, integrated-circuit (ICAN-6544lPlanar transistors, rf power (technical datalPlastic-package transistors and thyristors (AN-4124)

Lead-forming techniques (AN-4124)Mounting IAN-41241Thermal-resistance considerations (AN·41241Types of packages IAN-41241

Plastic-package transistors and thyristors lAN-4124)Lead-forming techniques (AN-4124)Mounting IAN-41241Thermal-resistance considerations (AN-41241Types of packages (AN-4124)

P-N-P power transistors, selection chartsPopcorn noise (ICAN-6732)Preamplifier, demodulator, integrated

circuit IICAN-67241Premium- and ultra-high-reliability

rf power transistors technical dataPrescaler, CaS/MaS IICAN-67161Prescaling IICAN-67161Preset-channel memory, CaS/MaS UCAN-6716)Processor, digital (ICAN-6210lProduct detector, integrated-circuit

IICAN-5022, 50361Program-switch ("N"-selectl options (ICAN·6498lProportional zero-voltage switching (AN-6096lProtection circuit CaS/MaS gate-oxide (ICAN-6218)Pull-up resistor (ICAN-6602)Pulse applications, high-current (AN-3418)Pulse-width circuit, CaS/MOS voltage-

controlled IICAN-62671Push·pull inverter (AN-3616)


204 826 Q

Quadruple-tuned interstage filter OCAN-53801 202 315

203 421 Qualified Parts List (QPLl 207 187203 423 Qualified products list 207 10203 425 Quiescent dissipation (of CaS/MaS devicesl203 426203 421 IICAN-65761 203 421

203 425203 424203 424

R204 805204 805 Radiation dose rate 207 21204 812 Radiation, effect on power transistors 207 19204 809 Displacement damage 207 20204 807 Photocurrents 207 20204 811 Radiation-hardened power transistors,204 805 technical data 207 45

Radiation levels 207 20204 738-742 Radiation parameter 207 20204 1 Radiation resistance of. COS/Mas207 12 CD4000A IICAN-62241 207 522204 10-22 Radio frequency interference (RFIl IAN-36971 206 389

Suppression network (AN-4242l 206 443204 170-522 Suppression of IAN-3778, 4242, 4537 206 397, 443,204 404-689 449204 278-402 RAM, CaS/MaS, binary, 4-word, a-bit204 26-168 (technical datal, (File No. 613l 203 184204 524-556204 692-735 Rating chart, thermal-cycling (AN-4612, 204 823,831,

204 558-276 4783,61631 846Rating curves, rectifier (AN-3659) 206 380

204 823,831, RCS color system (ICAN-67241 202 352

846 Reactor element, switching-regulator lAN-3616l 204 784Read-only-memory, CaS/MaS (technical data),

204 824, 832 IFile No. 6131 203 184Readouts, incandescent (ICAN-6733) 203 480

205 475 Real-time controls (AN-6163l 207 62

202 333 Receiver circuits, integrated205 20-51 Quick selection chart 201 18

204 789Technical data 201 432-588

204 791 Receiver subsystem, AM, integrateo-circuit204 793 (technical datal. (File No. 5601 201 446204 793 Receiver synthesizer, caS/Mas FM (ICAN-6716) 203 460204 789 Recovered audio (ICAN-5269) 202 308206 422 Rectifier current, calculation of lAN-36591 206 382206 424206 426 Rectifier product matrix 206 22-24

206 426 Rectifier rating curves (AN-3659) 206 385206 422 Rectifiers, fast recovery, (File Nos. 580, 629, 663, 206 345,313,204 13-22 664, 6651 318,326,202 79 334

Rectifiers, silicon202 349 Product matrix 206 22-24

Technical data 206 252-348

207 119-174 Rectifiers, stud·mounted types203 458 (technical data) 206 281-293:

203 458 318-348

203 470 Rectifier surge-protection resistance,203 394 calculation of (AN-3659l 206 381

Reed-relay thyristor gate control (AN-4537l 206 449

202 131,152 Registers, CaS/MaS MSI, design and203 420 application IICAN-61661 203 368

206 465 Reliability classes, MI L-M-3851 0 207 10

203 403 Reliability levels, MIL·S·19500 207 10

203 446 Resistance ladder networks (ICAN-60BO) 203 342

206 359 Resistance networks for DAC's (ICAN·6oBO) 203 342

Resistance, rectifier surge-protection203 413 calculation of (AN-3659l 206 381

204 779 Resistor, pull-up OCAN-6602) 203 446

520

Subject Index


BOOK Nos. BOOK Nos.

REVERSAWATT transistors, epitaxial base Schmitt trigger (I CAN-50301 202 143silicon n-p·n and p-n-p (technical datal 204 262-276 SeR's and rectifiers, horizontal-deflection 206 294-302

Reverse-bias second breakdown 207 12 Itechnical datal, IFile Nos. 354, 5221Reverse collector current 207 15 SeR applications, circuit factor charts 206 375RF amplifier IAN-45901 202 411 IAN-3551 I

R F amplifiers, integrated circuit (ICAN-5022, 202 108, SCR bridge circuits IAN-42421 206 439R F amplifiers, MOS-transistor (AN·3453, 3535) 202 372,374, SeR circuit, full-wave de (AN-3551) 206 377

378,380 SeR circuit, half-wave (AN-3551) 206 375RF avalanche breakdown voltage 207 71 SeR control circuit, full-wave {AN-4242l 206 439RFI (see radio frequency inteferencel SeA control circuit half-wave IAN-4242) 206 439RF operation IAN-47741 205 472 SeR horizontal deflection system (AN-37801 206 400RF power amplifiers IAN-3755, 3764, 44211 205 429,444, Advantages of IAN-37801 206 409

458, 459Arc protection (AN-3780) 206 408Basic operation (AN-3780) 206 402

R F power devices High voltage generation (AN-3780) 206 406Application notes for 205 414-511 High-voltage regulation (AN-3780) 206 407Power-frequency curves 205 8-10 Linearity correction (AN-3780) 206 408Selection charts 205 11-16 Performance requirements IAN-3780) 206 400Technical data 205 20-605 Switching-device requirements (AN-3780l 206 401

R F power transistors, power-frequency curves 205 8-10SCR product matrix 206 18-21

RF power transistors, selection charts for:Aircraft and marine-radio applications 205 15 SCR's (technical data) 206 138-250Marine-radio applications 205 15 SCR turn-o-n time (AN-3418l "06 359Microwave applications 205 11 SCR, two-transistor analogy of (AN-42421 206 430Military applications 205 12 SCR, two-transistor model of (AN-4745) 206 452Military communications and CATV /MATV

Screening tests, power-transistor 207 22and small-signal applications 205 16Mobile-radio applications 205 13-15 Second breakdown 207 12Single-sideband applications 205 16 Second breakdown, forward-bias (AN-4573) 204 817

RF power transistors in linear applications 205 461 Causes of IAN-45731 204 817IAN-4591l Test facility for (AN-4573) 204 818

RF power transistors, pulsed operation of 205 427Test circuits (AN-4573l 204 818Transistor characterization for (AN-4573) 204 818

IAN-37551 Second detector OCAN-5296) 202 99RF power transistors, safe-area curves for 205 427 Selectivity curve:

IAN-37551 Double-tuned filter II CAN-53801 202 313RF power transistor, for single-sideband Quadruple-tuned filter (ICAN-5380l 202 314

linear amplifier (AN-4591l 205 461 Six double-tuned filters (I CAN-5380) 202 317

Ringing-choke converter (AN-3616l 204 779Triple-tuned filter (ICAN-5380) 202 314

Ring modulator, integrated-circuit (ICAN-5299) 202 105 SEM specification 207 107

Ripple blanking (lCAN-6294) 202 294 Sensitive-gate silicon controlled

R/S latches, COS/MOS quad 3-state rectifiers (technical data), (File No. 6541 206 138

(technical data), (File No. 590) 203 214 Sensitive-gate triacs (technical data)IFile Nos. 431, 441, 4701 206 33-46

Serial adder, COS/MOS triple(technical data), (File No. 503) 203 164

Serial adder, COS/MOS triple(technical datal. (File No. 575l 203 169

S Servo amplifier OCAN-5338l 202 189Shift register, COS/MOS dual 4-stage

Safe-area measurements, test set for (AN-6145) 204 838 static (technical data), (File No. 479) , 203 79Construction (AN-6145) 204 842 Shift register, static, COS/MOSControls and connections (AN-6145) 204 842 MSI (technical data), (File No. 575) 203 169Operation IAN-61451 204 842Schematic diagram (AN-6145l 204 839 Shift register, COS/MOS, parallel-in,System design IAN-61451 204 839 parallel-out, 4-stage (technical datalSystem philosophy IAN-61451 204 838 IFile No. 5681 203 177

Safe-area systems, pulsed 207 16 Shift register, COS/MOS 4-stage serial-Safe-operating-area chart 207 16 input/parallel-output, static (ICAN-6166l 203 380Sample-and-hold circuits (ICAN-6668l 202 66 Shift register, COS/MOS 8-stage,Sampling plans, LTPD 207 23 asynchronous, parallel-input/serialSampling plans, single, for normal inspection 207 25 output static (ICAN-6166l 203 382Sample size code letters 207 25 Shift register, COS/MOS 8-stageSaturation current 207 16 static (technical data). (File No. 479) 203 74,110Scaling adders II CAN-50151 202 35 Shift register, COS/MOS, 18-stageSchmitt circuit (ICAN-6538) 202 273 static (technical data) (ICAN-6166l 203 380Schmitt trigger (lCAN-5337) 202 174 Shift register, COS/MOS 18-stageSchmitt trigger IICAN-5036) 202 152 (technical datal. (File No. 479) 203 37

\§~~j~~a~aJI,~r~~I~Os. :>o~,:>UJJ LU~ l:>ts,IOq ts-stage\tecnnlcal Oatal, H-lie NO. :>/~I LUJ Ib~

Silicon bidirectional diacs Static shift register, CaS/MaS, 64-stage(technical data), (File No. 577) 206 350 (technical data), (File No. 569) 203 158

Silicon-controlled rectifiers and silicon Stereo multiplex decoder, integrated-circuitrectifiers complement (technical data) (technical datal. (File No. 502) 201 440

IF;le Nos. 522, 3541 206 298-307 Stereo preampl ifier, integrated-circuitSilicon controlled rectifiers, high- current (technical datal. (File Nos. 377, 387) 201 247,432

pulsed applications of (AN-3418) 206 359 Stripline-package microwave power transistors 205 228-256,Characteristics and ratings (AN-3418) 206 361 (technical datal. (File Nos. 543-546, 261-274,Circuits (AN-3418) 206 359 626-628,640,641,6571 383-396,Design considerations for (AN-3418l 206 359Switching capability (AN·3418) 206 360 401

Turn-on time (AN-3418) 206 359 Stripline power amplifier AN-3764 205 440

Silicon controlled rectifiers, product Stud-mounted rectifiers (technical data) 206 281-293,matrix 206 18-21 318-580

Silicon controlled rectifiers Surface leakage 207 16

{technical datal 206 138-250 Surge-protection resistance (rectifierl, (AN-3659) 200 301

Silicon rectifiers (technical data) 206 252-348 calculation of (AN-3659) 206 385

Silicon controlled rectifiers, fast turn-off Switching capability (SCR) (AN-3418) 206 360(technical data), (File Nos. 408, 724) 206 238,245 Swtiching characteristic (of thyristors) (AN-4242) 206 430

Silicon rectifiers, fast-recovery Switching CirCUIts,on·off (AN-4537) 206 447(technical datal. (File Nos. 663-665. Sw;tch, COS/MOS (lCAN-6080) 203 344726-729,5801 206 318-348 Switching regulator (AN-3065, 3616) 204 765,779

Silicon rectifiers, capacItive-load Switching-regulator ballasts (AN-3065, 3616) 204 768,783applications of (AN-3659) 206 380 Switching-regulator circuits components (AN-3616) 204 786

Capacitor-input circuits (AN-3659) 206 380Limiting resistance (AN·3659) 206 381 Switching-regulator reactor element (AN-3616) 204 785Rating curves (AN-3659) 206 385 Switching-regulator transistor (AN-36161 204 786Rectifier current (AN-3659) 206 382 Switching SCR's and diodes (AN-3780) 206 401

Silicon transistors for high-voltage Switching transistors (technical data) 204 404-689application lAN-3065l 204 763 Switching transistor, rf power, planar !technical

Silicon transistors, high-current, n-p-n, data, File Nos. 44, 56) 205 41,48hometaxial II (technical data) Symmetrical limiting, load impedance forIFde Nos. 525, 5261 204 141-156 (ICAN-5380) 202 312

Silicon transistors, hIgh-voltage, n-p-n. Synchronous switching, zero-vol tage (AN-6054) 206 458hometaxialll (technical datal, (File No. 5281 204 133 Synthesizer system, FM (ICAN-67161 203 468

Silicon transistors, medium-power System gain (ICAN-5841) 202 330IF;le Nos. 527, 5291 204 45,69

Silicon triacs (technical datal 206 28-136Single-sideband communications systems

IAN-45911 205 461Single-sideband rf power transistor

(technical datal. (File Nos. 268, 551,484) 205 100,333, T216

"Slash" sheets 207 186 Tapers, -volume-control (lCAN-5841) 202 331

Slewing rate (ICAN-5641) 202 57 Temperature-control circuits (AN-6141) 206 474

Snubber networks AN-4745 206 451 Temperature controllers (ICAN-6182) 202 253

Basic circuit analysis AN-4745 206 453 Electric-heat application lICAN-6182) 202 254

Design procedure AN-4745 206 454 lntegral-cyde (ICAN-6182) 202 256On-off (ICAN-61821 202 253

Solid-state ballasting circuits AN-3616 204 778 Temperature controllers (ICAN-61821 206 487Solid-state relay AN-6141 206 470 Integral-cycle IICAN-6182) 206 490

Use of for power sWItching AN-6141 206 470 On-off type IICAN-61821 206 487Advantages of AN-6141 206 473 Proportional type UCAN-6182) 206 487

SolId-state traffic flashes f1CAN-6182) 202 260Solid-state traffic flashes (ICAN-6182) 206 494 Temperature, effect of on silicon transistors 207 15Sound carrier amplification (ICAN-6544) 202 333 Temperature-sensing diode (File No. 484) 205 216SpecIal-function sub-system, integrated-circuit Television video if system, integrated-

(technical data), (File Nos. 331,340) 201 466,484 circuit (technical data, File No. 467) 201 525Speed controls, universal motors (AN-3697) 206 392 Television chroma system integrated-SPUriOUSnOise sources (I CAN-67321 202 85 circuit (technical data, File Nos. 466, 468) 201 533,549Spurious nOise, suppression of (ICAN-6732) 202 85 Test circuits and connections and dimensionalSquelch control, COS/MOS IICAN-66021 203 445 outlines for integrated circuits 207 536Stability, conditions for lICAN-40721 202 90 Test set for safe-area measurements (AN-6145) 204 838Staircase generator, linear (lCAN-5641) 202 60 Construction (AN-61451 204 842

Subject Index

DATA· Page DATA· Page

BOOK Nos. BOOK Nos.

Controls and connections (AN-6145) 204 842 Tratfic-signallamp control, triac:Operation (AN-6145) 204 842 Circuits (AN-4537l 206 446Schematic diagram (AN-6145) 204 839 Surge current effects IAN-4537) 206 444System design (AN-6145) 204 839 Triac operation (AN-4537) 206 444System philosophy (AN-6145) 204 838 Transfer charact~ristic. differential amplifier

Thermal considerations in thyristor mounting ( ICAN·5380) 202 312(AN·3822) 206 410 Transformers, transmission-line (AN·4591) 205 465

Chassis mounted heat sinks (AN-38221 206 413 Transient-free switch controller (AN-4537)Heat sink configurations (AN-3822) 206 412 206 444

Heat-sink mounting (AN-3822) 206 412 Transient voltages (AN-6141) 206 472

Power dissipation and heat-sink area (AN-3822) 206 410 Transistor array, integrated-circuit:Thermal-eycling capability 207 17 Circuit applications (ICAN-5296) 202 97

Effect of assembly methods on 207 17 Circuit description (ICAN·5296) 202 96

Effect of package materials on 207 19,56 Operating characteristics (ICAN-5296) 202 97

Thermal-cycling capability, quantitativeTechnical data (File No. 338) 201 160

measurement of (AN-6163) 207 58 Transistor array, integrated-eircuit high-current,Application requirements (AN-6163) 207 58 n-p·n, display-driver applications of (ICAN-6733) 203 476Failure analysis (AN-6163) 207 58 Transistor arrays, integrated-circuit, quickPractical testing (AN-6163) 207 59 selection chart 201 14Test conditions (AN-6163) 207 60Real·time controls (AN-6163) 207 62 Transistor arrays, integrated-circuit (technicalTest rack (AN-6163) 207 63 data) 201 118-254

Thermal-cycling rating chart 207 18 Transistor power supplies, compact, 5·volt

Thermal<ycling rating system (AN-4509) 204 797

(AN-4612, 4783, 61631 204 823,831 Basic concept (AN-4509) 204 797

846Circuit elements (AN4509) 204 797

Rating chart (AN·47831 204 831Design example (AN·45091 204 802

Test program (AN-4783) 204 831 Transistors, high-voltage, medium-power

Thermal-cycling rating system (AN-4612) 207 53 silicon n-p-n (technical data, File No. 508) 204 278

Analysis of thermal fatigue in power transistors Transistors, high·voltage, high-power, silicon(AN-4612) 207 53 n-p-n (technical data. File Nos. 492, 509-513) 204 318·355

Thermal-cycling rating chart (AN4612) 207 53 Transistor, rf power single-sidebandThermal fatigue 207 17 (technical data. File Nos. 268, 551) 205 100,333Thermal-fatigue background (AN-47831 204 831 Transistors, high-power, silicon n-p-n typesThermal fatigue, power-transistor, analysis of (technical data, File Nos. 524, 5251 204 102,141

(AN-4612) 204 823 Transistors, medium-power, silicon n-p-n typesThermal-fatigue testing 207 19 (technical data, File Nos. 527,529) 204 45,69Thermal resistance, hot-spot (AN4774, 6010) 205 472,475 Transistor structure intrinsic (AN-37551 205 429Three-phase heater control (AN-60541 206 458 Transistors. voltage ratings, interpretation ofThree1Jhase motor control (AN-6054) 206 461 (AN·6215) 204 856Three-phase system. triac power control Transistor-zener diode-diode array (technical

for: data, File No. 533) 201 152Basic design rules (AN-6054) 206 456Circuits (AN·60541 206 461 Transmission of analog and digital signals

Inductive·load systems (AN-60541 206 460 (ICAN-6101) 203 360Isolation of dc logic circuitry (AN-6054) 206 459 Transmission-line reflections (ICAN-617S) 203 384Resistive-load systems (AN-60541 206 459 Transmisison-line transformers (ICAN-4591) 205 465Trigger circuit (AN-6054) 206 456

Thyristor applications, circuit factorsTransmitter, output (ICAN-6210) 203 399

charts (AN·3551) 206 375Triac applications, circuit factors charts (AN-3551) 206 375Triac circuit, full-wave:

Thyristor circuits, snubber networks for (AN-4745) 206 451 AC (AN·3551) 206 376Thyristor flasher (AN4745) 206 451 DC (AN·3551 1 206 377Thyristor gate characteristics (AN-4242) 206 432 Triac construction (AN-6141) 206 470Thyristor power control (AN-4537) 206 449 Triac controls for three-phase, power systemsThyristors, characteristics and applications (AN·6054) 206 456

(AN-4242) 206 430 Triac gate characteristics (AN-3697) 206 386Thyristors, gated, bidirectional (technical data) 206 28·250 Triac product matrix 206 14·17Thyristors. rectifiers, and other diodes 206 1 Triacs for use with IC zero·voltage switchThyristors. types of (AN-42421 206 430 (File No. 406) 206 47Thyristor switching characteristics (AN42421 206 434 Triacs, isolated-tab (technical data, File No. 5401 206 79Thyristor voltage and temperature ratings (AN-42421 206 431 Triacs, 400-Hz types (technical data, File Nos. 441,Thyristor voltage regulators, ac (AN-388s) 206 416 443,487) 206 41,99,

Timer, CaS/MOS. battery-operated, 114digital-display (ICAN-6733) 203 472 Triacs (technical datal 206 28·136

Tint-control amplifier, integrated-eircuit Triac voltage-current characteristic (AN-3697) 206 386

(ICAN-6724) 202 349 Triple-tuned interstage filter (ICAN-5380) 202 313

Traffic flasher, solid-state (ICAN-61821 202 260 True/complement buffer, COS&MOS quad

(AN·4537,ICAN·6182) 206 448,494 (technical data, File No. 572) 203 203

Subject Index

DATA· Page DATA- Page

BOOK Nos. BOOK Nos.

Tuned amplifier, integrated circuit (ICAN·5030) 202 142 Biasing (ICAN·5038) 202 158

Turn-on time definitions (SCR) (AN·3418) 206 359 Characteristics (leAN-5038) 207 160

TV circuits (ICAN-6544, 6724) 202 333,345Circuit description (ICAN-5038) 202 158Common-mode rejection (ICAN-5038) 202 162

TV receiver (ICAN-6544) 202 333 Gain control (ICAN·5038) 202 162Two-transistor analogv (of SeR) (AN-4242) 206 430 Harmonic distortion (IeAN·5038) 202 163

Input and output impedance (leAN-503a) 202 161Swing capability IICAN-5038) 202 163

Video amplifiers, integrated-circuit(ICAN·5296, 5338, 5015) 202 96,186

40

U Video and wide-band amplifier, integrated-eircuit(technical data. File Nos. 243, 363, 122) 201 276,282,

UHF amplifier, single-ended (AN-6010l 205 479 294

UHF power generation (AN-37551 205 424 Video detection, linear (ICAN~544) 202 333Package considerations (AN-3755) 205 424 Video detector, integrated-circuit (ICAN-6544) 202 336Pulsed operation of rf power trans. (AN-3755) 205 427 Video if amplification (ICAN-6544) 202 333Reliability considerations (AN-3755) 205 426RF performance criteria (AN-3755) 205 424 Voltage:Safe-area curves for rf power trans. (AN·3755) 205 427 Base-to-emitter 207 15

UHF power tronsistors, broadband applications Collector-to-emitter saturation 207 15

of IAN-6010) 205 475 Voltage breakdown, transistor (AN-6215l 204 856

Broadband amplifier chain (AN-6010) 205 483 Voltage and temperature ratings, triac (AN-6141) 206 472Broadband circuit design approach (AN-6010) 205 477 Voltage-controlled oscillators (ICAN-6267) 203 413Combined-transistor stage (AN-601 0) 205 483 Voltage-follower amplifier, CaS/MaS IICAN-6080) 203 344Gain equalizer (AN-6010) 205 481 Voltage follower, integrated-circuit (ICAN-5213) 202 53Single-ended amplifier (AN-601 0) 205 479

UHF power transistors, characteristics of (AN-6010) 205 475 Voltage ratings for transistors, interpretation of

Hot-spot thermal resistance (AN-601 0) 205 475 (AN-6215) 204 856Overdrive capability (AN-6010) 205 475 Avalanche multiplication (AN-6215) 204 856Pulsed operation (AN-6010) 205 475 Common-base avalanche brea kdown (AN-6215l 204 856

Ultor voltage (AN·3780) 206 400 Common~mitter avalanche breakdown (AN-6215) 204 857Effect of circuit conditions (AN-6215) 204 859

Universal motors (AN-3469) 206 364 Total alpha IAN-6215) 204 857Universal motor speed controls (AN-3469, 3697) 206 364,400 Transistor operating regions (AN-6215) 204 860

Voltage regulation (AN4558) 204 807Voltage regulators, ac (AN-3886) 206 416Voltage regulators, integrated-circuit (technical

data, Fire No. 491) 201 375Voltage regulator, series type (AN-3065) 204 763

V Volume-control circuit, conventional (ICAN-5841) 202 329

Variable·feedback volume-control circuits,Volume-control circuit, feedback t'/pe (ICAN-5814) 202 329

IICAN-5841 ) 202 329Volume-control circuit, losser type (lCAN-5841) 202 329

VCO, phase-locked (ICAN-6267) 203 413Volume controls, types of (ICAN-5841) 202 329

VERSAWATT transistors, Darlington (technicalVolume-control tapers (ICAN-5841) 202 331

data, File Nos. 610, 693, 6941 204 538,545551

VERSAWATT transistors, epitaxial-base, silicon(technical data, File Nos. 676, 669, 671, 673, 678) 204 177,193

201,209W226

VERSAWATT transistors, high-current, silicon Wideband multipurpose amplifier, integrated-n-p-n (technical data, File Nos. 485, 668) 204 121,129

circuit IICAN-5338) 202 177VERSAWATT transistors, hometaxial-base silicon Applications (ICAN-5338) 202 186

n·p·n Itechnical data, File Nos. 322, 353, 485, 680) 204 61,90 Circuit description (ICAN-53381 202 178121,83 Gain-frequency response (ICAN-5338) 202 180

VERSAWATT transistors, silicon p-n-p, (technical 204 Limiting IICAN-53381 202 180,185

data, File Nos. 667, 670,672,674,678,694) 189,197,Noise performance (ICAN·5338) 202 185Operating characteristics (ICAN-5338) 202 179

205,213, Wideband multipurpose power amplifiers,226,551 integrated circuit:

VHF mixer, MOS-transistor (AN-3341) 202 362 Applications (ICAN-5766) 202 194Design considerations (AN-3341) 202 362 Circuit description and operation (ICAN·5766) 202 191Design example (AN-3341 1 202 363 Operating characteristics (ICAN·5766) 202 194Maximum available gain (AN-3341) 202 364 Technical data (File No. 339) 201 268Maximum usable gain (AN-3341) 202 364 Wideband video and if amplifier, integrated-circuit:

Video amplifier, integrated-circuit (ICAN-5038) 202 158 Bias modes IICAN·5977) 202 201Applications (ICAN·5038) 202 163 Characteristics (ICAN-5977) 202 202

Circuit IICAN-5977) 202Circuit description (ICAN-5977) 202Construction techniques (ICAN-597?) 202Ratings (ICAN-5977) 202Stability considerations(ICAN-5977) 202Technical data (File No. 3631 201

Zero-voltage switches, integrated-circuit (ICAN~182) 202Application considerations (ICAN~182) 202Characteristics (technical data, File No. 490) 201Circuit operation OCAN-6182) 202Effect of thyristor load IICAN-6182) 202Functional description (ICAN-6182) 202Half-eycling effect (ICAN-61821 202Hysteresis characteristics (ICAN-61821 202Inductive-load switching IICAN-61 82) 202

Interfacing techniques (ICAN-61821Off-on sensing amplifier IICAN-6182)Operating-power options (ICAN-6182)Proportional control (ICAN--61821Sensor isolation (ICAN-6182)Temperature-controller application (ICAN-6182)Thyristor-triggering circuits (ICAN-6182)

Zero·voltage switches, int~grated circuit(AN-6054,ICAN-61821

Application considerations (ICAN-6182)Characteristics (AN-6054, ICAN-6182)Circuit operation (tCAN-6182)Effect of thyristor load IICAN-61821Functional description (ICAN-6182)Half-eycling effect (ICAN-6182)Hysteresis characteristics (ICAN-6182)Inductive load·switching (ICAN-6182)Interfacing techniques (ICAN-6182)Off.cn sensingamplifier (ICAN-61821Operating·power options (ICAN-6182)Proportional controlllCAN·61821Sensor isolation (ICAN-6182)Temperature-controller application (ICAN-6182)Thyristor·triggering circuits (ICAN-6182)

Zero-voltage switching (AN4537)Zero-voltage switching, proportional (AN-6096)Zero-voltage switches, integrated-eircuit (technicaldata, File No. 490)

Zero·voltage switch, integrated-circuit (AN-60541Zero-voltage synchronous switching (ICAN·6182)IAN-6054,ICAN-61821

DATA· Page

BOOK Nos.

202 241202 244202 245202 247202 252202 253202 243

206 456,475206 479206 456,475206 475206 483206 475206 480206 480206 483206 485206 478206 479206 481206 486206 487206 477206 446206 465

201 338206 456202 266206 458,500

1N441B 550-206 252 THC-500 5 AECT 1N5216 550-206 270 THC-500 245 AECT

1N442B 550-206 252 THC-500 5 AECT 1N5217 550-206 270 THC-500 245 AECT1N443B 550-206 252 THC-500 5 AECT 1N5218 550-206 270 THC-500 245 AECT1N444B 550-206 252 THC-500 5 AECT 1N5391 550-206 273 THC-500 478 AECT1N445B 550-206 252 THC-500 5 AECT 1N5392 550-206 273 THC-500 478 AECT1N536 550-206 255 THC-500 3 AECT 1N5393 550-206 273 THC-500 478 AECT

lN537 550-206 255 THC-500 3 AECT 1N5394 550-206 273 THC-500 478 AECTlN538 550-206 255 THC-500 3 AECT 1N5395 550-206 273 THC-500 478 AECT1N539 550-206 255 THC-500 3 AECT 1N5396 550-206 273 THC-500 478 AECT1N540 550-206 255 THC-500 3 AECT 1N5397 550-206 273 THC-500 478 AECT1N547 550-206 255 THC-500 3 AECT 1N5398 550-206 273 THC-500 478 AECT

1N1095 550-206 255 THC-500 3 AECT 1N5399 550-206 273 THC-500 478 AECT1N1183A 550-206 291 THC-500 38 AECT 2N681 550-206 225 THC-500 96 5CA1N1184A 550-206 291 THC-500 38 AECT 2N682 550-206 225 THC-500 96 5CA1N1186A 550-206 291 THC-500 38 AECT 2N683 550-206 225 THC-500 96 5CA1N1187A 550-206 291 THC-500 38 AECT 2N684 550-206 225 THC-500 96 5CA

1N1188A 550-206 291 THC-500 38 AECT 2N685 550-206 225 THC-500 96 5CA1N1189A 550-206 291 THC-500 38 AECT 2N686 550-206 225 THC-500 96 5CA1N1190A 550-206 291 THC-500 38 AECT 2N687 550-206 225 THC-500 96 5CA1N1195A 550-206 287 THC-500 6 AECT 2N688 550-206 225 THC-500 96 5CAlN1196A 550-206 287 THC-500 6 AECT 2N689 550-206 225 THC-500 96 5CA

1N1197A 550-206 287 THC-500 6 AECT 2N690 550-206 225 THC-500 96 5CA1N1198A 550-206 287 THC-500 6 AECT 2N697 550-204 493 PTO-187 16 PWA1N1199A 550-206 283 THC-500 20 AECT 2N699 550-204 495 PTO-187 22 PWA1N1200A 550-206 283 THC-500 20 AECT 2N918 550-204 692 AFT-700 83 AF1N1202A 550-206 283 THC-500 20 AECT 2N918 550-205 20 AFT-700 83 AF

1N1203A 550-206 283 THC-500 20 AECT 2N1491 550-205 24 AFT-700 10 AF1N1204A 550-206 283 THC-500 20 AECT 2N1492 550-205 24 AFT-lOO 10 AF1N1205A 550-206 283 THC-500 20 AECT 2N1493 550-205 24 AFT-700 10 AF1N1206A 550-206 283 THC-500 20 AECT 2N1613 550-204 498 PTO-187 106 PWA1N1341B 550-206 281 THC-500 58 AECT 2N1711 550-204 503 PTO-187 26 PWA

1N1342B 550-206 281 THC-500 58 AECT 2N1842A 550-206 234 THC-500 28 5CA1N1344B 550-206 281 THC-500 58 AECT 2N1843A 550-206 234 THC-500 28 5CA1N1345B 550-206 281 THC-500 58 AECT 2N1844A 550-206 234 THC-500 28 5CA1N1346B 550-206 281 THC-500 58 AECT 2N1845A 550-206 234 THC-500 28 5CA1N1347B 550-206 281 THC-500 58 AECT 2N1846A 550-206 234 THC-500 28 5CA

lN1348B 550-206 281 THC-500 58 AECT 2N1847A 550-206 234 THC-500 28 5CA1N1763A 550-206 258 THC-500 89 AECT 2N1848A 550-206 234 THC-500 28 5CA1N1764A 550-206 258 THC-500 89 AECT 2N1849A 550-206 234 THC-500 28 5CAlN2858A 550-206 265 THC-500 91 AECT 2N1850A 550-206 234 THC-500 28 5CAlN2859A 550-206 265 THC-500 91 AECT 2N1893 550-204 507 PTO-187 34 PWA

lN2860A 550-206 265 THC-500 91 AECT 2N2102 550-204 498 PTO-187 106 PWA1N2861A 550-206 265 THC-500 91 AECT 2N2102 550-207 34 PWAlN2862A 550-206 265 THC-500 91 AECT 2N2270 550-204 513 PTO-187 24 PWAlN2863A 550-206 265 THC-500 91 AECT 2N2405 550-204 507 PTO-187 34 PWAlN2864A 550-206 265 THC-500 91 AECT 2N2631 550-205 28 AFT-700 32 AF

1N3193 550-206 294 THC-500 41 AECT 2N2857 550-204 714 AFT-700 61 AF1N3194 550-206 294 THC-500 41 AECT 2N2857 550-205 33 AFT-700 61 AF1N3195 550-206 294 THC-500 41 AECT 2N2876 550-205 28 AFT-700 32 AFlN3196 550-206 294 THC-500 41 AECT 2N2895 550-204 517 PTO-187 143 PWA1N3253 550-206 294 THC-500 41 AECT 2N2896 550-204 517 PTO-187 143 PWA

1N3254 550-206 294 THC-500 41 AECT 2N2897 550-204 517 PTO-187 143 PWA1N3255 550-206 294 THC-500 41 AECT 2N3053 550-204 404 PTO-187 432 PWA1N3256 550-206 294 THC-500 41 AECT 2N3054 550-204 45 PTO-187 527 PWA1N3563 550-206 294 THC-500 41 AECT 2N3054 550-207 34 PWA1N3879 550-206 323 THC-500 726 AECT 2N3055 550-204 102 PTO-187 524 PWA

1N3880 550-206 323 THC-500 726 AECT 2N3118 550-205 37 AFT-700 42 AF1N3881 550-206 323 THC-500 726 AECT 2N3119 550-205 41 AFT-700 44 AF1N3882 550-206 323 THC-500 726 AECT 2N3228 550-206 144 THC-500 114 5CA1N3883 550-206 323 THC-500 726 AECT 2N3229 550-205 45 AFT-700 50 AF1N3889 550-206 331 THC-500 727 AECT 2N3262 550-205 48 AFT-700 56 AF

1N3890 550-206 331 THC-500 727 AECT 2N3263 550-204 475 PTO-187 54 PWA1N3891 550-206 331 THC-500 727 AECT 2N3263 550-207 35 PWA1N3892 550-206 331 THC-500 727 AECT 2N3264 550-204 475 PTO-187 54 PWA1N3893 550-206 331 THC-500 727 AECT 2N3265 550-204 475 PTO-187 54 PWA1N3899 550-206 339 THC-500 728 AECT 2N3266 550-204 475 PTO-187 54 PWA

1N3900 550-206 339 THC-500 728 AECT 2N3375 550-205 52 AFT-700 386 AF1N3901 550-206 339 THC-500 728 AECT 2N3439 550-204 286 PTO-187 64 PWA1N3902 550-206 339 THC-500 728 AECT 2N3440 550-204 286 PTO-187 64 PWAlN3903 550-206 339 THC-500 728 AECT 2N3441 550-204 69 PTO-187 529 PWAlN3909 550-206 342 THC-500 729 AECT 2N3442 550-204 133 PTO-187 528 PWA

lN3910 550-206 342 THC-500 729 AECT 2N3478 550-204 696 AFT-700 77 AF1N3911 550-206 342 THC-500 729 AECT 2N3478 550-205 60 AFT-700 77 AF1N3912 550-206 342 THC-500 729 AECT 2N3525 550-206 144 THC-500 114 5CA1N3913 550-206 342 THC-500 729 AECT 2N3528 550-206 144 THC-500 114 5CA1N5211 550-206 270 THC-500 245 AECT 2N3529 550-206 144 THC-500 114 5CA

526

Index to DevicesDATA File Product DATA File Product

Type No. BOOK Page Catalog Type No. BOOK PageNo. Line Catalog No. LineVol. No. Vol. No.

2N3553 550-205 52 RFT-700 386 RF 2N5298 550-204 61 PTO-187 322 PWR2~!3583 550-204 304 PTO-187 138 PWR 2N5320 550-204 429 PTO-187 325 PWR2N3584 550-204 304 PTO·187 138 PWR 2N5320 550-207 38 PWR2N3585 550-204 304 PTO-187 138 PWR 2N5321 550-204 429 PTO-187 325 PWR2N3600 550·204 692 RFT·700 83 RF 2N5322 550-204 429 PTO-187 325 PWR

2N3600 550·205 20 RFT-700 83 RF 2N5322 550-207 39 PWR2N3632 550·205 52 RFT·700 386 RF 2N5323 550·204 429 PTO-187 325 PWR2N3650 550-206 238 THC-500 408 5CR 2N5415 550-204 292 PTO-187 336 PWR2N3651 550-206 238 THC-500 408 5CR 2N5416 550·204 292 PTO-187 336 PWR2N3652 550·206 238 THC-500 408 5CR 2N5441 550·206 55 THC·500 593 TRI

2N3653 550-206 238 THC-500 408 5CR 2N5442 550-206 55 THC-500 593 TRI2N3654 550·206 245 THC·500 724 5CR 2N5443 550-206 55 THC-500 593 TRI2N3655 550-206 245 THC-500 724 5CR 2N5444 550-206 55 THC-500 593 TRI2N3656 550-206 245 THC-500 724 5CR 2N5445 550-206 55 THC-500 593 TRI2N3657 550-206 245 THC-500 724 5CR 2N5446 550-206 55 THC·500 593 TRI

2N3658 550·206 245 THC·500 724 5CR 2N5470 550-205 140 RFT·700 350 RF2N3668 550-206 203 THC-500 116 5CR 2N5490 550-204 90 PTO-187 353 PWR2N3669 550·206 203 THC·500 116 5CR 2N5491 550-204 90 PTO·187 353 PWR2N3670 550-206 203 THC-500 116 5CR 2N5492 550·204 90 PTO-187 353 PWR2N3733 550·205 64 RFT·700 72 RF 2N5493 550·204 90 PTO·187 353 PWR

2N3771 550-204 141 PTO-187 525 PWR 2N5494 550-204 90 PTO-187 353 PWR2N3772 550-204 141 PTO·187 525 PWR 2N5495 550·204 90 PTO·187 353 PWR2N3773 550-204 149 PTO-187 526 PWR 2N5496 550·204 90 PTO-187 353 PWR2N3773 550-207 36 PWR 2N5497 550-204 90 PTO·187 353 PWR2N3839 550·204 718 RFT·700 229 RF 2N5567 550·206 92 THC-500 457 TRI

2N3839 550-205 69 RFT-700 229 RF 2N5568 550-206 92 THC·500 457 TRI2N3866 550-205 73 RFT-700 80 RF 2N5569 550·206 92 THC-500 457 TRI2N3870 550-206 218 THC-500 578 5CR 2N5570 550·206 92 THC-500 457 TRI2N3871 550-206 218 THC-500 578 5CR 2N5571 550·206 85 THC-500 458 TRI2N3872 550-206 218 THC-500 578 5CR 2N5572 550·206 85 THC-500 458 TRI

2N3873 550·206 218 THC·500 578 5CR 2N5573 550-206 85 THC·500 458 TRI2N3878 550·204 443 PTO·187 299 PWR 2N5574 550-206 85 THC-500 458 TRI2N3879 550-204 443 PTO-187 299 PWR 2N5575 550-204 162 PTO·187 359 PWR2N3879 550-207 36 PWR 2N5578 550-204 162 PTO·187 359 PWR2N3896 550-206 218 THC-500 578 5CR 2N5578 550-207 39 PWR

2N3897 550-206 218 THC-500 578 5CR 2N5671 550-204 481 PTO-187 383 PWR2N3898 550-206 218 THC-500 578 5CR 2N5672 550-204 481 PTO-187 383 PWR2N3899 550-206 218 THC-500 578 5CR 2N5754 550-206 28 THC·500 414 TRI2N4012 550-205 77 RFT-700 90 RF 2N5755 550-206 28 THC·500 414 TRI2N4036 550-204 410 PTO·187 216 PWR 2N5756 550-206 28 THC·500 414 TRI

2N4036 550-207 37 PWR 2N5757 550-206 28 THC-500 414 TRI2N4037 550-204 410 PTO·187 216 PWR 2N5781 550-204 34 PTO·187 413 PWR2N4063 550-204 286 PTO·187 64 PWR 2N5781 550-207 40 PWR2N4064 550·204 286 PTO·187 64 PWR 2N5782 550-204 34 PTO-187 413 PWR2N4101 550·206 144 THC-500 114 5CR 2N5783 550·204 34 PTD-187 413 PWR

2N4102 550-206 144 THC-500 114 5CR 2N5784 550-204 34 PTO-187 413 PWR2N4103 55D-206 203 THC-500 116 5CR 2N5784 550-207 40 PWR2N4240 550-204 304 PTO-187 135 PWR 2N5785 550·204 34 PTO-187 413 PWR2N4314 550·204 410 PTO·187 216 PWR 2N5786 550·204 34 PTD-187 413 PWR2N4347 550·204 133 PTO·187 528 PWR 2N5804 550-204 379 PTO-187 407 PWR

2N4348 550-204 149 PTO-187 526 PWR 2N5805 550-204 379 PTO·187 407 PWR2N4427 550-205 81 RFT-700 228 RF 2N5838 550-204 356 PTO-187 410 PWR2N4440 550·205 87 RFT·700 217 RF 2N5839 550-204 356 PTO-187 410 PWR2N4932 550·205 92 RFT·70o 249 RF 2N5840 550-204 356 PTO-187 410 PWR2N4933 550-205 92 RFT·700 249 RF 2N5913 550-205 146 RFT·700 423 RF

2N5016 550-205 96 RFT-700 255 RF 2N5914 550-205 152 RFT-700 424 RF2N5038 550-204 461 PTO-187 698 PWR 2N5915 550-205 152 RFT·700 424 RF2N5039 550-204 461 PTO-187 698 PWR 2N5916 550-205 158 RFT·700 425 RF2N5070 550·205 100 RFT·700 268 RF 2N5917 550-205 158 RFT·700 425 RF2N5071 550-205 105 RFT·700 269 RF 2N5918 550-205 164 RFT-700 448 RF

2N5090 550-205 109 RFT-700 270 RF 2N5919A 550-205 169 RFT-700 505 RF2N5102 550-205 113 RFT·700 279 RF 2N5920 550-205 175 RFT-700 440 RF2N5109 550-204 722 RFT·700 281 RF 2N5921 550-205 181 RFT-700 427 RF2N5109 550-205 118 RFT·700 281 RF 2N5954 550-204 170 PTO-187 675 PWR2N5179 550-204 700 RFT-700 288 RF 2N5954 550-207 41 PWR

2N5179 550·205 124 RFT-70o 288 RF 2N5955 550-204 170 PTO·187 675 PWR2N5180 550-205 130 RFT-70o 289 RF 2N5956 550-204 170 PTO-187 675 PWR2N5189 550-204 418 PTO-187 296 PWR 2N5992 550·205 189 RFT-7oo 451 RF2N5202 550-204 443 PTD-187 299 PWR 2N5993 550-205 194 RFT·7oo 452 RF2N5239 550-204 373 PTO-187 321 PWR 2N5994 550-205 199 RFT·7oo 453 RF

2N524o 550-204 373 PTO-187 321 PWR 2N5995 550·205 205 RFT-700 454 RF2N524o 550·207 37 PWR 2N5996 550-205 210 RFT-7oo 455 RF2N5262 550-204 423 PTO-187 313 RF 2N6032 550-204 487 PTO-187 462 PWR2N5262 550-205 134 PTO-187 313 RF 2N6033 550-204 487 PTO-187 462 PWR2N5262 550-207 38 RF 2N6033 550-207 41 PWR

2N5293 550-204 61 PTO-187 322 PWR 2N6055 550-204 527 PTO-187 563 PWR2N5294 550-204 61 PTO-187 322 PWR 2N6056 550-204 527 PTO-187 563 PWR2N5295 550-204 61 PTO-187 322 PWR 2N6056 550-207 42 PWR2N5296 550-204 61 PTO-187 322 PWR 2N6077 550·204 318 PTO-187 492 PWR2N5297 550·204 61· PTO·187 322 PWR 2N6078 55Q·204 318 PTO·187 492 PWR

527

Index to DevicesDATA File Product DATA

Type No. BOOK Page Catalog Type No. BOOK Page Catalog File Product

Vol. No. No. Line Vol. No.No. Line

2N6079 550·204 318 PTO-187 492 PWR 2N6472 550-204 217 PTO·187 677 PWR

2N6079 550·207 42 PWR 2N6473 550·204 177 PTO-187 676 PWR

2N6093 550-205 216 RFT-700 484 RF 2N6474 550·204 177 PTO-187 676 PWR

2N6098 550-204 121 PTO-187 485 PWR 2N6475 550-204 177 PTO-187 676 PWR

2N6099 550·204 121 PTO·187 485 PWR 2N6476- 550-204 177 PTO·187 676 PWR

2N6100 550·204 121 PTO·187 485 PWR 2N6477 550-204 83 PTO·187 680 PWR

2N6101 550-204 121 PTO·187 485 PWR 2N6478 550·204 83 PTO-187 680 PWR

2N6102 550-204 121 PTO-187 485 PWR 2N6479 550-204 454 PTO·187 702 PWR

2N6103 550·204 121 PTO-187 485 PWR 2N6479 550-207 45 PWR

2N6104 550·205 221 RFT·700 504 RF 2N6480 550-204 454 PTO-187 702 PWR

2N6105 550·205 221 RFT·700 504 RF 2N6480 550·207 45 PWR

2N6106 550·204 177 PTO·187 676 PWR 2N6481 550·204 454 PTO-187 702 PWR

2N6107 550-204 177 PTO-187 676 PWR 2N6481 550·207 45 PWR

2N6108 550-204 177 PTO-187 676 PWR 2N6482 550-204 454 PTO-187 702 PWR

2N6109 550-204 177 PTO-187 676 PWR 2N6482 550-207 45 PWR

2N6110 550-204 177 PTO-187 676 PWR 2N6486 550·204 226 PTO-187 678 PWR

2N6111 550-204 177 PTO-187 676 PWR 2N6487 550-204 226 PTO·187 678 PWR

2N6175 550·204 278 PTO·187 508 PWR 2N6488 550-204 226 PTO-187 678 PWR

2N6176 550·204 278 PTO·187 508 PWR 2N6489 550·204 226 PTO-187 678 PWR

2N6177 550-204 278 PTO-187 508 PWR 2N6490 550·204 226 PTO-187 678 PWR

2N6178 550-204 435 PTO-187 562 PWR 2N6491 550-204 226 PTO-187 678 PWR

2N6179 550·204 435 PTO·187 562 PWR 2N6496 550-204 461 PTO-187 698 PWR

2N6180 550-204 435 PTO-187 562 PWR 3N128 550·201 634 M05-160 309 M05/FET

2N6181 550-204 435 PTO-187 562 PWR 3N138 550-201 639 M05·160 283 M05/FET

2N6211 550-204 312 PTO-187 507 PWR 3N139 550·201 643 M05-160 284 M05/FET

2N6212 550·204 312 PTO-187 507 PWR 3N140 550-201 667 M05-160 285 M05/FET

2N6213 550·204 312 PTO-187 507 PWR 3N141 550·201 667 M05-160 285 M05/FET

2N6214 550·204 312 PTO·187 507 PWR 3N142 550-201 648 M05·160 286 M05/FET

2N6246 550-204 217 PTO·187 677 PWR 3N143 550-201 634 M05-160 309 M05/FET

2N6247 550·204 217 PTO·187 677 PWR 3N152 550-201 654 M05-160 314 M05/FET

2N6248 550·204 217 PTO-187 677 PWR 3N153 550-201 659 M05·160 320 M05/FET

2N6248 550·207 43 PWR 3N154 550-201 662 M05-160 335 M05/FET

2N6249 550·204 385 PTO·187 523 PWR 3N159 550-201 675 M05-160 326 M05/FET

2N6250 550·204 385 PTO-187 523 PWR 3N187 550·201 690 M05·160 436 M05/FET

2N6251 550-204 385 PTO·187 523 PWR 3N200 550-201 698 M05·160 437 M05/FET

2N6251 550-207 43 PWR 40080 550·205 275 RFT-700 301 RF2N6253 550-204 102 PTO-187 524 PWR 40081 550·205 275 RFT·700 301 RF2N6254 550-204 102 PTO·187 524 PWR 40082 550-205 275 RFT·700 301 RF2N6257 550-204 141 PTO-187 525 PWR 40279 550·207 119 RFT·700 46 RF2N6258 550-204 141 PTO-187 525 PWR 40280 550-205 279 RFT·700 68 RF

2N6259 550·204 149 PTO-187 526 PWR 40281 550-205 279 RFT-700 68 RF

2N6260 550·204 45 PTO-187 527 PWR 40282 550·205 279 RFT·700 68 RF

2N6261 550·204 45 PTO-187 527 PWR 40290 550-205 283 RFT·700 70 RF2N6262 550-204 133 PTO·187 528 PWR 40291 550-205 283 RFT·700 70 RF2N6263 550·204 69 PTO-187 529 PWR 40292 550-205 283 RFT-700 70 RF

2N6264 550·204 69 PTO-187 529 PWR 40294 550-207 123 RFT-700 202 RF2N6265 550-205 228 RFT-700 543 RF 40296 550-207 130 RFT·700 603 RF2N6266 550-205 234 RFT-700 544 RF 40305 550-207 137 RFT-700 144 RF2N6267 550-205 240 RFT-700 545 RF 40306 550-207 137 RFT·700 144 RF2N6268 550-205 246 RFT-700 546 RF 40307 550-207 137 RFT-700 144 RF

2N6269 550-205 246 RFT-700 546 RF 40309 550-204 655 PTO·187 78 PWR2N6288 550-204 177 PTO·187 676 PWR 40310 550-204 655 PTO-187 78 PWR2N6289 550·204 177 PTO-187 676 PWR 40311 550-204 655 PTO-187 78 PWR2N6290 550-204 177 PTO-187 676 PWR 40312 550-204 655 PTO-187 78 PWR2N6291 550·204 177 PTO·187 676 PWR 40313 550·204 655 PTO·187 78 PWR

2N6292 550·204 177 PTO-187 676 PWR 40314 550-204 655 PTO-187 78 PWR2N6293 550-204 177 PTO-187 676 PWR 40315 550-204 655 PTO-187 78 PWR2N6354 550-204 149 PTO-187 582 PWR 40316 550-204 655 PTO-187 78 PWR2N6371 550·204 97 PTO-187 607 PWR 40317 550·204 655 PTO-187 78 PWR2N6372 550-204 170 PTO-187 675 PWR 40318 550-204 655 PTO-187 78 PWR

2N6373 550·204 170 PTO-187 675 PWR 40319 550-204 655 PTO·187 78 PWR2N6374 550·204 170 PTO-187 675 PWR 40320 550-204 655 PTO·187 78 PWR2N6383 550·204 532 PTO-187 609 PWR 40321 550-204 655 PTO·187 78 PWR2N6384 550-204 532 PTO·187 609 PWR 40322 550-204 655 PTO·187 78 PWR2N6385 550-204 532 PTO·187 609 PWR 40323 550-204 655 PTO-187 78 PWR

2N6385 550·207 44 PWR 40324 550-204 655 PTO-187 78 PWR2N6386 550·204 538 PTO-187 610 PWR 40325 550-204 655 PTO-187 78 PWR2N6387 550-204 538 PTO-187 610 PWR 40326 550-204 655 PTO-187 78 PWR2N6388 550-204 538 PTO-187 610 PWR 40327 550-204 655 PTO·187 78 PWR2N6389 550-204 732 RFT-700 617 RF 40328 550-204 655 PTO-187 78 PWR

2N6389 550-205 257 RFT-700 617 RF 40340 550-205 287 RFT-700 74 RF2N6390 550-205 261 RFT-700 626 RF 40341 550-205 287 RFT·700 74 RF2N6391 550-205 265 RFT-700 627 RF 40346 550-204 393 PTO-187 211 PWR2N6392 550-205 270 RFT-700 628 RF 40346V1 550-204 393 PTO-187 211 PWR2N6393 550-205 270 RFT-700 628 RF 40346V2 550-204 393 PTO-187 211 PWR

2N6467 550-204 170 PTO-187 675 PWR 40347 550-204 26 PTO·187 88 PWR2N6468 550·204 170 PTO-187 675 PWR 40347V1 550-204 26 PTO·187 88 PWR

2N6469 550·204 217 PTO·187 677 PWR 40347V2 550-204 26 PTO-187 88 PWR2N6470 550·204 217 PTO·187 677 PWR 40348 550-204 26 PTO-187 88 PWR2N6471 550-204 217 PTO-187 677 PWR 40348V1 550·204 26 PTO-187 88 PWR

528

Index to DevicesDATA File Product

DATA File ProductType No. BOOK Page Catalog No. Line

Type No. BOOK Page Catalog No. LineVol. No. Vol. No.

40348V2 SSD-204 26 PTO-187 88 PWR 40819 SSO-201 704 MOS-160 463 MOS/FET40349 SSO-204 26 PTO-187 88 PWR 40820 SSO-201 724 MOS-160 464 MOS/FET40349Vl SSO-204 26 PTO-187 88 PWR 40821 SSO-201 724 MOS-160 464 MOS/FET40349V2 SSO-204 26 PTO-187 88 PWR 40822 SSO-201 732 MOS-160 465 MOS/FET40360 SSO-204 655 PTO-187 78 PWR 40823 SSO-201 732 MOS-160 465 MOS/FET

40361 SSO-204 655 PTO-187 78 PWR 40829 SSO-204 170 PTO-187 675 PWR40362 SSO-204 655 PTO-187 78 PWR 40830 SSO-204 170 PTO-187 675 PWR40363 SSO-204 655 PTO-187 78 PWR 40831 SSO-204 170 PTO-187 675 PWR40364 SSO-204 655 PTO-187 78 PWR 40836 SSO·205 298 RFT-700 497 RF40366 SSO·204 397 PTO-187 215 PWR 40837 SSO-205 298 RFT-700 497 RF

40367 SSO-204 397 PTO-187 215 PWR 40841 SSO-201 739 MOS-160 489 MOS/FET40368 SSO-204 397 PTO-187 215 PWR 40850 SSO-204 368 PTO-187 498 PWR40369 SSO-204 397 PTO-187 215 PWR 40851 SSO-204 368 PTO-187 498 PWR40372 SSO-204 45 PTO-187 527 PWR 40852 SSO-204 368 PTO-187 498 PWR40373 SSO-204 69 PTO-187 529 PWR 40853 SSO-204 368 PTO-187 498 PWR

40374 SSO-204 304 PTO-187 128 PWR 40854 SSO-204 368 PTO-187 498 PWR40375 SSO-204 443 PTO-187 299 PWR 40871 SSO-204 685 PTO-187 699 PWR40385 SSO-204 397 PTO-187 215 PWR 40872 SSO-204 685 PTO-187 699 PWR40389 SSO-204 404 PTO-187 432 PWR 40873 SSO-204 685 PTO-187 699 PWR40390 SSO-204 286 PTO-187 64 PWR 40874 SSO-204 685 PTO-187 699 PWR

40391 SSO-204 410 PTO-187 216 PWR 40875 SSO-204 685 PTO-187 699 PWR40392 SSO-204 404 PTO-187 432 PWR 40876 SSO-204 685 PTO-187 699 PWR40394 SSO·204 410 PTO-187 216 PWR 40885 SSO-204 278 PTO-187 508 PWR40406 SSO-204 661 PTO-187 219 PWR 40886 SSO-204 278 PTO-187 508 PWR40407 SSO-204 661 PTO-187 219 PWR 40887 SSO-204 278 PTO-187 508 PWR

40408 SSO-204 661 PTO-187 219 PWR 40893 SSO-205 304 RFT-700 514 RF40409 SSO-204 661 PTO-187 219 PWR 40894 SSO-204 706 RFT-700 548 RF40410 SSO-204 661 PTO-187 219 PWR 40894 SSO-205 309 RFT-700 548 RF40411 SSO-204 661 PTO-187 219 PWR 40895 SSO-204 706 RFT-700 548 RF40412 SSO-204 393 PTO-187 211 PWR 40895 SSO-205 309 RFT-700 548 RF

40412Vl SSO-204 393 PTO-187 211 PWR 40896 SSO-204 706 RFT-700 548 RF40412V2 SSO-204 393 PTO-187 211 PWR 40896 SSO-205 309 RFT-700 548 RF40414 SSO-207 142 RFT-700 259 RF 40897 SSO-204 706 RFT-700 548 RF40446 SSO-205 275 RFT-700 301 RF 40897 SSO-205 309 RFT-700 548 RF40467A SSO-201 681 MOS-160 324 MOS/FET 40898 SSO-205 313 RFT-700 538 RF40468A SSO-201 686 MOS-160 323 MOS/FET 40899 SSO-205 313 RFT·700 538 RF40537 SSO-204 668 PTO-187 320 PWR 40909 SSO-205 321 RFT-700 547 RF40538 SSO-204 668 PTO-187 320 PWR 40910 SSO-204 45 PTO-187 527 PWR40539 SSO-204 671 PTO-187 303 PWR 40911 SSO-204 45 PTO-187 527 PWR40542 SSO-204 675 PTO-187 304 PWR 40912 SSO-204 69 PTO-187 529 PWR40543 SSO-204 675 PTO-187 304 PWR 40913 SSO-204 69 PTO-187 529 PWR40544 SSO-204 671 PTO-187 303 PWR 40915 SSO-204 710 RFT-700 574 RF40559A SSO-201 686 MOS-160 323 MOS/FET 40915 SSO-205 325 RFT-700 574 RF40577 SSO-207 148 RFT-700 297 RF 40934 SSO-205 329 RFT-700 550 RF40578 SSO-207 155 RFT-700 298 RF 40936 SSO-205 333 RFT-700 551 RF40581 SSO-205 275 RF1'700 301 RF 40940 SSO-205 337 RFT-700 553 RF40582 SSO-205 275 RFT-700 301 RF 40941 SSO-205 342 R FT-700 554 RF40594 SSO-204 681 PTO-187 358 PWR 40953 SSO-205 346 RFT-700 579 RF40595 SSO-204 681 PTO-187 358 PWR 40954 SSO-205 346 RFT-700 579 RF40600 SSO-201 712 MOS-160 333 MOS/FET 40955 SSO-205 346 RFT-700 579 RF

40601 SSO-201 712 MOS-160 333 MOSIFET 40964 SSO·205 351 RFT-700 581 RF40602 SSO-201 712 MOS-160 333 MOSIFET 40965 SSO·205 351 RFT-700 581 RF40603 SSO-201 720 MOS-160 334 MOSIFET 40967 SSO-205 355 RFT-700 596 RF40604 SSO-201 720 MOS-160 334 MOS/FET 40968 SSO-205 355 RFT-700 596 RF40605 SSO-207 161 RFT-700 389 RF 40970 SSO-205 359 RFT-700 656 RF

40606 SSO-207 168 RFT-700 600 RF 40971 SSO-205 359 RFT-700 656 RF40608 SSO-204 728 RFT-700 356 RF 40972 SSO-205 365 RFT-700 597 RF40608 SSO-205 291 RFT-700 356 RF 40973 SSO-205 365 RFT-700 597 RF40611 SSO-204 681 PTO-187 358 PWR 40974 SSO-205 365 RFT·700 597 RF40613 SSO-204 681 PTO-187 358 PWR 40975 SSO-205 369 RFT·700 606 RF

40616 SSO-204 681 PTO-187 358 PWR 40976 SSO-205 369 RFT-700 606 RF40618 SSO-204 681 PTO-187 358 PWR 40977 SSO-205 369 RFT-700 606 RF40621 SSO-204 681 PTO-187 358 PWR 41008 SSO-205 373 RFT-700 616 RF40622 SSO-204 681 PTO-187 358 PWR 41008A SSO-205 373 RFT-700 616 RF40624 SSO-204 681 PTO-187 358 PWR 41009 SSO-205 373 RFT-700 616 RF

40625 SSO-204 681 PTO-187 358 PWR 41009A SSO-205 373 RFT-700 616 RF40627 SSO-204 681 PTO-187 358 PWR 41010 SSO-205 373 RFT-700 616 RF40628 SSO-204 681 PTO-187 358 PWR 41024 SSO-205 379 RFT-700 658 RF40629 SSO-204 681 PTO-187 358 PWR 41025 SSO-205 383 RFT-700 641 RF40630 SSO-204 681 PTO-187 358 PWR 41026 SSO-205 383 RFT-700 641 RF

40631 SSO-204 681 PTO-187 358 PWR 41027 SSO-205 390 RFT-700 640 RF'~0632 SSO-204 681 PTO-187 358 PWR 41028 SSO-205 390 RFT-700 640 RF40633 SSO-204 681 PTO-187 358 PWR 41038 SSO-205 397 RFT-700 679 RF40634 SSO-204 681 PTO-187 358 PWR 41508 SSO-204 157 PTO-187 622 PWR40635 SSO-204 681 PTO-187 358 PWR 45190 SSO-204 273 PTO-187 559 PWR

40636 SSO-204 681 PT '-i37 358 PWR 45191 SSO-204 273 PTO-187 559 PWR40637A SSO-205 295 RF- i·:',}() 655 RF 45192 SSO-204 273 PTO-187 559 PWR40665 SSO-205 52 RFT·/00 386 RF 45193 SSO-204 273 PTO-187 559 PWR40666 SSO-205 52 RFT-7UO 386 RF 45194 SSO-204 273 PTO-187 559 PWR40673 SSO-201 745 MOS-160 381 MOS/FET 45195 SSO-204 273 PTO-187 559 PWR

529

B0183 550-204 115 700 PWR CA1558T 550-201 74 COL-820 531 L1CB0239 550-204 193 669 PWR CA2111AE 550-201 520 COL-820 612 L1C

B0239A 550-204 193 669 PWR CA2111AQ 550-201 520 COL-820 612 L1CB0239B 550-204 193 669 PWR CA3000 550-201 288 COL-820 121 L1CB0239C 550-204 193 669 PWR CA3000/1-4 550-207 196 705 L1CB0240 550-204 197 670 PWR CA3000H 550-201 590 COL-820 516 L1CB0240A 550-204 197 670 PWR CA3001 550-201 294 COL-820 122 L1C

B0240B 550-204 197 670 PWR CA3001/1-4 550-207 203 714 L1CB0240C 550-204 197 670 PWR CA3001 H 550-201 590 COL-820 516 L1CB0241 550-204 201 671 PWR CA3002 550-201 256 COL-820 123 L1CB0241A 550-204 201 671 PWR CA3002/1-4 550-207 210 713 L1CB0241B 550-204 201 671 PWR CA3002H 550-201 590 COL-820 516 L1C

B0241C 550-204 201 671 PWR CA3004 550-201 300 COL-820 124 L1CB0242 550-204 205 672 PWR CA3004/1-4 550-207 216 712 L1CB0242A 550-204 205 672 PWR CA3005 550-201 306 COL-820 125 L1CB0242B 550-204 205 672 PWR CA3005H 550-201 590 COL-820 516 L1CB0242C 550-204 205 672 PWR CA3006 550-201 306 COL-820 125 L1C

B0243 550-204 209 673 PWR CA3007 550-201 313 COL-820 126 L1CB0243A 550-204 209 673 PWR CA3008 550-201 80 COL-820 316 L1CB0243B 550-204 209 673 PWR CA3008A 550-201 89 COL-820 310 L1CB0243C 550-204 209 673 PWR CA3010 550-201 80 COL-820 316 L1CB0244 550-204 213 674 PWR CA3010A 550-201 89 COL-820 310 L1C

B0244A 550-204 213 674 PWR CA3011 550-201 262 COL-820 128 L1CB0244B 550-204 213 674 PWR CA3012 550-201 262 COL-820 128 L1CB0244C 550-204 213 674 PWR CA3012H 550-201 590 COL-820 516 L1CB0277 550-204 189 667 PWR CA3013 550-201 471 COL-820 129 L1CB0278 550-204 129 668 PWR CA3014 550-201 471 COL-820 129 L1CBOX33 550-204 545 693 PWR CA3015 550-201 80 COL-820 316 L1CBOX33A 550-204 545 693 PWR CA3015A 550-201 89 COL-820 310 L1CBOX33B 550-204 545 693 PWR CA3015A11-4 550-207 222 715 L1CBOX33C 550-204 545 693 PWR CA3015H 550-201 590 COL-820 516 L1CBOX34 550-204 551 694 PWR CA3015L 550-201 605 COL-820 515 L1CBOX34A 550-204 551 694 PWR CA3016 550-201 80 COL-820 316 L1CBOX34B 550-204 551 694 PWR CA3016A 550-201 89 COL-820 310 L1CBOX34C 550-204 551 694 PWR CA3018 550-201 160 COL-820 338 L1CBFT19 550-204 298 683 PWR CA30~oA 550-201 160 COL-820 338 L1CBFT19A 550-204 298 683 PWR CA3ll18H 550-201 590 COL-820 516 L1CBFT19B 550-204 298 683 PWR CA3018L 550-201 605 COL-820 515 L1CBU106 550-204 363 716 PWR CA3019 550-201 118 COL-820 236 L1CCA108A5 550-201 105 COL-820 621 L1C CA3019/1-4 550-207 229 722 L1CCA108AT 550-201 105 COL-820 621 L1C CA3019H 550-201 590 COL-820 516 L1CCA1085 550-201 105 COL-820 621 L1C CA3020 550-201 268 COL-820 339 L1CCA108T 550-201 105 COL-820 621 L1C CA3020A 550-201 268 COL-820 339 L1CCA208A5 550-201 105 COL-820 621 L1C CA3020H 550-201 590 COL-820 516 L1CCA208AT 550-201 105 COL-820 621 L1C CA3021 550-201 276 COL-820 243 L1CCA2085 550-201 105 COL-820 621 L1C CA3022 550-201 276 COL-820 243 L1CCA208T 550-201 105 COL-820 621 L1C CA3023 550-201 276 COL-820 243 L1CCA308A5 550-201 105 COL-820 621 L1C CA3023H 550-201 590 COL-820 516 L1CCA308AT 550-201 105 COL-820 621 L1C CA3026 550-201 226 COL-820 388 L1CCA308H 550-201 590 COL-820 516 L1C CA3026/1-4 550-207 235 706 L1CCA3085 550-201 105 COL-820 621 L1C CA3026H 550-201 590 COL-820 516 L1CCA308T 550-201 105 COL-820 621 L1C CA3028A 550-201 318 COL-820 382 L1CCA741/1-4 550-207 188 718 L1C CA3028AF 550-201 318 COL-820 382 L1CCA741CH 550-201 590 COL-820 516 L1C CA3028AH 550-201 590 COL-820 516 L1CCA741C5 550-201 74 COL-820 531 L1C CA3028AL 550-201 605 COL-820 515 L1CCA741CT 550-201 74 COL-820 531 L1C CA3028A5 550-201 318 COL-820 382 L1CCA741 L 550-201 605 COL-820 515 L1C CA3028B 550-201 318 COL-820 382 L1CCA7415 550-201 74 COL-820 531 L1C CA3028B/1-4 550-207 243 711 L1CCA741T 550-201 74 COL-820 531 L1C CA3028BF 550-201 318 COL-820 382 L1CCA747/1-4 550-207 188 718 L1C CA3028B5 550-201 318 COL-820 382 L1CCA747CE 550-201 74 COL-820 531 L1C CA3029 550-201 80 COL-820 316 L1CCA 747CF 550-201 74 COL-820 531 L1C CA3029A 550-201 89 COL-820 310 L1CCA 747CH 550-201 590 COL-820 516 L1C CA3030 550-201 80 COL-820 316 L1CCA747CT 550-201 74 COL-820 531 L1C CA3030A 550-201 89 COL-820 310 L1CCA747E 550-201 74 COL-820 531 L1C CA3033 550-201 61 COL-820 360 L1CCA747F 550-201 74 COL-820 531 L1C CA3033A 550-201 61 COL-820 360 L1CCA747T 550-201 74 COL-820 531 L1C CA3033H 550-201 590 COL-820 516 L1CCA748/1-4 550-207 188 718 L1C CA3035 550-201 243 COL-820 274 L1CCA748CH 550-201 590 COL-820 516 L1C CA3035H 550-201 590 COL-820 516 L1CCA748C5 550-201 74 COL-820 531 L1C CA3035Vl 550-201 243 COL-820 274 L1CCA748CT 550-201 74 COL-820 531 L1C CA3036 550-201 158 COL-820 275 L1CCA7485 550-201 74 COL-820 531 L1C CA3037 550-201 80 COL-820 316 L1CCA748T 550-201 74 COL-820 531 L1C CA3037A 550-201 89 COL-820 310 L1CCA1398E 550-201 573 COL-820 686 L1C CA3038 550-201 80 COL-820 316 L1CCA14585 550-201 74 COL-820 531 L1C CA3038A 550-201 89 COL-820 310 L1CCA1458T 550-201 74 COL-820 531 L1C CA3039 550-201 122 COL-820 343 L1CCA15410 550-201 395 COL-820 536 L1C CA3039/1-4 550-207 250 704 L1C

530


Type No. BOOK Page Catalog Type No. BOOK Page CatalogVol. No. No. Line Vol. No. No. line

CA3039H 550-201 590 COL-820 516 L1C CA3084L 550-201 605 COL-820 515 L1C

CA3039L 550-201 605 COL-820 515 L1C CA3085 550·201 375 COL-820 491 L1C

CA3040 550-201 282 COL-820 363 L1C CA3085/1-4 550-207 285 708 L1C

CA3041 550·201 498 COL-820 318 L1C CA3085A 550-201 375 COL-820 491 L1C

CA3042 550-201 506 COL-820 319 L1C CA3085A/1·4 550-207 285 708 L1C

CA3043 550·201 466 COL-820 331 L1C CA3085AF 550-201 375 COL-820 491 L1C

CA3043H 550-201 590 COL-820 516 L1C CA3085A5 550·201 375 COL·820 491 L1C

CA3044 550-201 484 COL-820 340 L1C CA3085B 550-201 375 COL·820 491 L1C

CA3044V1 550-201 484 COL-820 340 L1C CA3085B/1-4 550-207 285 708 L1C

CA3045 550·201 177 COL-820 341 L1C CA3085BF 550-201 375 COL-820 491 L1C

CA3045/1-4 550-207 255 710 L1C CA3085B5 550-201 375 COL·820 491 L1C

CA3045F 550-201 177 COL·820 341 L1C CA3085F 550-201 375 COL-820 491 L1C

CA3045H 550·201 590 COL-820 516 L1C CA3085H 550-201 590 COL·820 516 L1C

CA3045L 550-201 605 COL-820 515 L1C CA3085L 550-201 605 COL-820 515 LIC

CA3046 550-201 177 COL·820 341 L1C CA30855 550-201 375 COL·820 491 L1C

CA3047 550-201 61 COL-820 360 L1C CA3086 550·201 183 COL·820 483 L1C

CA3047A 550-201 61 COL-820 360 L1C CA3086F 550-201 183 COL-820 483 L1C

CA3048 550-201 247 COL-820 377 L1C CA3088E 550-201 446 COL-820 560 L1C

CA3048H 550-201 590 COL·820 516 L1C CA3089E 550·201 455 COL·820 561 L1C

CA3049/1-4 550-207 263 707 L1C CA3090AQ 550-201 440 COL-820 684 L1C

CA3049H 550-201 590 COL-820 516 L1C CA30910 550-201 383 COL-820 534 L1C

CA3049L 550-201 605 COL-820 515 L1C CA3091 H 550-201 590 COL-820 516 L1C

CA3049T 550-201 234 COL-820 611 L1C CA3093E 550-201 152 COL-820 533 L1C

CA3050 550-201 329 COL-820 361 L1C CA3093H 550-201 590 COL-820 516 L1C

CA3051 550-201 329 COL-820 361 L1C CA3094/1-4 550-207 291 692 L1C

CA3052 550-201 432 COL-820 387 L1C CA3094A/1-4 550-207 291 692 L1C

CA3053 550-201 318 COL-820 382 L1C CA3094AT 550-201 346 COL-820 598 L1C

CA3053F 550-201 318 COL-820 382 L1C CA3094B/1-4 550-207 291 692 L1C

CA30535 550-201 318 COL-820 382 L1C CA3094BT 550-201 346 COL-820 598 L1C

CA3054 550-201 226 COL-820 388 L1C CA3094H 550-207 590 COL-820 516 L1C

CA3054H 550-201 590 COL-820 516 L1C CA3094T 550-201 346 COL·820 598 L1CCA3054L 550-201 605 COL-820 515 L1C CA3095E 550-201 189 COL-820 591 L1CCA3058 550-201 338 COL-820 490 L1C CA3096AE 550-201 141 COL·820 595 L1CCA3058/1-4 550-207 269 703 L1C CA3096E 550-201 141 COL·820 595 L1CCA3059 550-201 338 COL-820 490 L1C CA3096H 550-201 590 COL·820 516 L1C

CA3059H 550-201 590 COL-820 516 L1C CA3097E 550·201 199 COL-820 633 L1CCA3060AO 550·201 38 COL-820 537 L1C CA3097H 550-201 590 COL-820 516 L1CCA3060BO 550-201 38 COL-820 537 L1C CA3099E 550-201 359 COL·820 620 L1CCA30600 550-201 38 COL-820 537 L1C CA3099H 550-201 590 COL-820 516 L1CCA3060E 550-201 38 COL-820 537 L1C CA3100H 550-201 590 COL-820 516 L1C

CA3060H 550-201 590 COL-820 516 L1C CA31005 550-201 98 COL-820 625 L1CCA3062 550-201 367 COL-820 421 L1C CA3100T 550-201 98 COL-820 625 L1CCA3064 550-201 490 COL-820 396 L1C CA3102E 550-201 234 COL-820 611 L1CCA3064E 550-201 490 COL-820 396 L1C CA3102H 550·201 590 COL-820 516 L1CCA3065 550-201 514 COL-820 412 L1C CA3118AT 550-201 166 COL.8jO 532 L1C

CA3066 550-201 533 COL-820 466 L1C CA3118H 550-201 590 COL-820 516 L1CCA3067 550-201 533 COL-820 466 L1C CA3118T 550-201 166 COL-820 532 L1CCA3068 550-201 525 COL-820 467 L1C CA3120E 550-201 5S1 COL-820 691 L1CCA3070 550-201 549 COL-820 468 L1C CA3121 E 550-201 567 COL-820 688 L1CCA3071 550-201 549 COL-820 468 L1C CA3123E 550-201 450 COL-820 631 L1C

CA30n 550-201 549 COL-820 468 L1C CA3125E 550-201 577 COL-820 685 L1CCA3075 550-201 462 COL-820 429 L1C CA3126Q 550-201 565 COL-820 Pre!. L1CCA3075H 550-201 590 COL-820 516 L1C CA3140E 550-201 113 COL-820 630 L1CCA3076 550-201 479 COL·820 430 L1C CA3140H 550-201 590 COL-820 516 L1CCA3076H 550-201 590 COL-820 516 L1C CA3146AE 550-201 166 COL·820 532 L1C

CA3078A5 550-201 52 COL-820 535 L1C CA3146E 550·201 166 COL-820 532 L1CCA3078AT 550-201 52 COL-820 535 L1C CA3146H 550-201 590 COL-820 516 L1CCA3078H 550-201 590 COL-820 516 L1C CA3183AE 550-201 166 COL·820 532 L1CCA30785 550-201 52 COL-820 535 L1C CA3183E 550-201 166 COL-820 532 L1CCA3078T 550-201 52 COL-820 535 L1C CA3183H 550-201 590 COL-820 516 L1C

CA3079 550-201 338 COL-820 490 L1C CA3401 550-201 113 COL-820 630 L1CCA3080 550-201 30 COL-820 475 L1C CA3600E 550-201 213 COL-820 619 L1CCA3080/1-4 550-207 277 709 L1C CA6078A5 550-201 69 COL-820 592 L1CCA3080A 550-201 30 COL-820 475 L1C CA6078AT 550·201 69 COL-820 592 L1CCA3080A/1·4 550-207 277 709 L1C CA67415 550-201 69 COL-820 592 L1C

CA3080A5 550-201 30 COL-820 475 L1C CA6741T 550-201 69 COL-820 592 L1CCA3080H 550-201 590 COL-820 516 L1C C02150 550-201 409 COL-820 308 L1CCA30805 550-201 30 COL-820 475 L1C C02151 550-201 409 COL-820 308 L1CCA3081 550·201 126 COL-820 480 L1C C02152 550-201 409 COL-820 308 L1CCA3081 F 550-201 126 COL-820 480 L1C C02153 550-201 409 COL-820 308 L1C

CA3081 H 550-201 590 COL-820 516 L1C C02154 550·201 421 COL-820 402 L1CCA3082 550-201 126 COL-820 480 L1C C02500E 550-201 403 COL-820 392 L1CCA3082F 550-201 126 COL-820 480 L1C C02501 E 550-201 403 COL-820 392 L1CCA3082H 550-201 590 COL-820 516 L1C C02502E 550-201 403 COL-820 392 L1CCA3083 550-201 130 COL-820 481 L1C C02503E 550-201 403 COL-820 392 L1C

CA3083F 550-201 130 COL·820 481 L1C C04000A/1-4 550-207 309 687 C05/M05CA3083H 550-201 590 COL-820 516 L1C C04000AO 550-203 30 C05-278 479 C05/MOSCA3083L 550-201 605 COL-820 515 L1C C04000AE 550-203 30 C05-278 479 Ca5/Ma5CA3084 550-201 134 COL-820 482 L1C C04000AF 550-203 30 C05·278 479 Ca5/Ma5CA3084H 550-201 590 COL-820 516 L1C C04000AH 550-203 307 Ca5-278 517 ca5/Ma5

531


Type No. BOOK Page Catalog No. Line Type No. BOOK Page Catalog No. LineVol.No. Vol. No.

CD4000AK SSD-203 30 COS-278 479 COS/MOS CD4017AE SSD·203 90 COS·278 479 COS/MOSCD4001 A/1-4 SSD·207 309 687 COS/MOS CD4017AF SSD-203 90 COS-278 479 COS/MOSCD4001AD SSD-203 30 COS-278 479 COS/MOS CD4017AH SSD-203 307 COS-278 517 COS/MOSCD4001AE SSD-203 30 COS-278 479 COS/MOS CD4017AK SSD-203 90 COS-278 479 COS/MOSCD4001AF SSD-203 30 COS-278 479 COS/MOS CD4018A11-4 SSD-207 375 742 COS/MOS

CD4001AH SSD-203 307 COS-278 517 COS/MOS CD4018AD SSD-203 95 COS-278 479 COS/MOSCD4001AK SSD-203 30 COS-278 479 COS/MOS CD4018AE SSD-203 95 COS-278 479 COS/MOSCD4002A/1-4 SSD-207 309 687 COS/MOS CD4018AF SSD-203 95 COS-278 479 COS/MOSCD4002AD SSD-203 30 COS-278 479 COS/MOS CD4018AH SSD-203 307 COS-278 517 COS/MOSCD4002AE SSD-203 30 COS-278 479 COS/MOS CD4018AK SSD-203 95 COS-278 479 COS/MOS

CD4002AF SSD-203 30 COS-278 479 COS/MOS CD4019A/1-4 SSD-207 380 743 COS/MOSCD4002AH SSD-203 307 COS-278 517 COS/MOS CD4019AD SSD-203 100 COS-278 479 COS/MOSCD4002AK SSD-203 30 COS-278 479 COS/MOS CD4019AE SSD-203 100 COS-278 479 COS/MOSCD4004A Series Replaced by CD4024A Series CD4019AF SSD-203 100 COS-278 479 COS/MOSCD4006A/1-4 SSD-207 316 689 COS/MOS CD4019AH SSD-203 307 COS-278 517 COS/MOS

CD4006AD SSD-203 37 COS-278 479 COS/MOS CD4019AK SSD-203 100 COS-278 479 COS/MOS

CD4006AE SSD-203 37 COS-278 479 COS/MOS CD4020A/1-4 SSD-207 384 750 COS/MOS

CD4006AF SSD-203 37 COS-278 479 COS/MOS CD4020AD SSD-203 105 COS-278 479 COS/MOS

CD4006AH SSD-203 307 COS-278 517 COS/MOS CD4020AE SSD-203 105 COS-278 479 COS/MOS

CD4006AK SSD-203 37 COS-278 479 COS/MOS CD4020AF SSD-203 105 COS-278 479 COS/MOS

CD4007A/1-4 SSD-207 321 695 COS/MOS CD4020AH SSD-203 307 COS-278 517 COS/MOS

CD4007AD SSD-203 43 COS-278 479 COS/MOS CD4020AK SSD-203 105 COS-278 479 COS/MOS

CD4007AE SSD-203 43 COS-278 479 COS/MOS CD4021A/1-4 SSD-207 389 730 COS/MOS

CD4007AF SSD-203 43 COS-278 479 COS/MOS CD4021AD SSD-203 110 COS-278 479 COS/MOS

CD4007AH SSD-203 307 COS-278 517 COS/MOS CD4021AE SSD-203 110 COS-278 479 COS/MOS

CD4007AK SSD-203 43 COS-278 479 COS/MOS CD4021AF SSD-203 110 COS-278 479 COS/MOS

CD4008A/1-4 SSD-207 327 696 COS/MOS CD4021AH SSD-203 307 COS-278 517 COS/MOS

CD4008AD SSD-203 49 COS-278 479 COS/MOS CD4021AK SSD-203 110 COS-278 479 COS/MOSCD4008AE SSD-203 49 COS-278 479 COS/MOS CD4022A/1-4 SSD-207 394 731 COS/MOSCD4008AF SSD-203 49 COS-278 479 COS/MOS CD4022AD SSD-203 115 COS-278 479 COS/MOS

CD4008AH SSD-203 307 COS-278 517 COS/MOS CD4022AE SSD-203 115 COS-278 479 COS/MOSCD4008AK SSD-203 49 COS-278 479 COS/MOS CD4022AF SSD-203 115 COS-278 479 COS/MOSCD4009A/1-4 SSD-207 332 719 COS/MOS CD4022AH SSD-203 307 COS-278 517 COS/MOSCD4009AD SSD-203 54 COS-278 479 COS/MOS CD4022AK SSD-203 115 COS-278 479 COS/MOSCD4009AE SSD-203 54 COS-278 479 COS/MOS CD4023A/1-4 SSD-207 339 717 COS/MOS

CD4009AH SSD-203 307 COS-278 517 COS/MOS CD4023AD SSD-203 61 COS-278 479 COS/MOSCD4009AK SSD-203 54 COS-278 479 COS/MOS CD4023AE SSD-203 61 COS-278 479 COS/MOSCD4010A/1-4 SSD-207 332 719 COS/MOS CD4023AF SSD-203 61 COS-278 479 COS/MOSCD4010AD SSD-203 54 COS-278 479 COS/MOS CD4023AH SSD-203 307 COS-278 517 COS/MOSCD4010AE SSD-203 54 COS-278 479 COS/MOS CD4023AK SSD-203 61 COS-278 479 COS/MOS

CD4010AH SSD-203 307 COS-278 517 COS/MOS CD4024A/1-4 SSD-207 399 732 COS/MOSCD4010AK SSD-203 54 COS-278 479 COS/MOS CD4024AD SSD-203 120 COS-278 503 COS/MOSCD4011A/1-4 SSD-207 339 717 COS/MOS CD4024AE SSD-203 120 COS-278 503 COS/MOSCD4011AD SSD-203 61 COS-278 479 COS/MOS CD4024AF SSD-203 120 COS-278 503 COS/MOSCD4011AE SSD-203 61 COS-278 479 COS/MOS CD4024AH SSD-203 307 COS-278 517 COS/MOS

CD4011AF SSD-203 61 COS-278 479 COS/MOS CD4025A/1-4 SSD-207 309 687 COS/MOSCD4011AH SSD-203 307 COS-278 517 COS/MOS CD4025AD SSD-203 30 COS-278 479 COS/MOSCD4011AK SSD-203 61 COS-278 479 COS/MOS CD4025AE SSD-203 30 COS-278 479 COS/MOSCD4012A/1-4 SSD-207 339 717 COS/MOS CD4025AF SSD-203 30 COS-278 479 COS/MOSCD4012AD SSD-203 61 COS-278 479 COS/MOS CD4025AH SSD-203 307 COS-278 517 COS/MOS

CD4012AE SSD-203 61 COS-278 479 COS/MOS CD4025AK SSD-203 30 COS-278 479 COS/MOSCD4012AF SSD-203 61 COS-278 479 COS/MOS CD4026A/1-4 SSD-207 404 733 COS/MOSCD4012AH SSD-203 307 COS-278 517 COS/MOS CD4026AD SSD-203 126 COS-278 503 COS/MOSCD4012AK SSD-203 61 COS-278 479 COS/MOS CD4026AE SSD-203 126 COS-278 503 COS/MOSCD4013A/1-4 SSD-207 346 697 COS/MOS CD4026AF SSD-203 126 COS-278 503 COS/MOS

CD4013AD SSD-203 68 COS-278 479 COS/MOS CD4026AH SSD-203 307 COS-278 517 COS/MOSCD4013AE SSD-203 68 COS-278 479 COS/MOS CD4026AK SSD-203 126 COS-278 503 COS/MOSCD4013AF SSD-203 68 COS-278 479 COS/MOS CD4027A/1-4 SSD-207 411 734 COS/MOSCD4013AH SSD-203 307 COS-278 517 COS/MOS CD4027AD SSD-203 135 COS-278 503 COS/MOSCD4013AK SSD-203 68 COS-278 479 COS/MOS CD4027AE SSD-203 135 COS-278 503 COS/MOS

CD4014A11-4 SSD-207 352 720 COS/MOS CD4027AH SSD-203 307 COS-278 517 COS/MOSCD4014AD SSD-203 74 COS-278 479 COS/MOS CD4027AK SSD-203 135 COS-278 503 COS/MOSCD4014AE SSD-203 74 COS-278 479 COS/MOS CD4028A/1-4 SSD-207 417 735 COS/MOSCD4014AF SSD-203 74 COS-278 479 COS/MOS CD4028AD SSD-203 141 COS-278 503 COS/MOSCD4014AH SSD-203 307 COS-278 517 COS/MOS CD4028AE SSD-203 141 COS-278 503 COS/MOS

CD4014AK SSD-203 74 COS-278 479 COS/MOS CD4028AF SSD-203 141 r.OS-278 503 COS/MOSCD4015A/1-4 SSD-207 357 721 COS/MOS CD4028AH SSD-203 307 <:OS-278 517 COS/MOSCD4015AD SSD-203 79 COS-278 479 COS/MOS CD4028AK SSD-203 141 COS-278 503 COS/MOSCD4015AE SSD-203 79 COS-278 479 COS/MOS CD4029A/1-4 SSD-207 421 736 COS/MOSCD4015AF SSD-203 79 COS-278 479 COS/MOS CD4029AD SSD-203 146 COS-278 503 COS/MOS

CD4015AH SSD-203 307 COS-278 517 COS/MOS CD4029AE SSD-203 146 COS-278 503 COS/MOSCD4015AK SSD-203 79 COS-278 479 COS/MOS CD4029AH SSD-203 307 COS-278 517 COS/MOSCD4016A/1-4 SSD-207 362 744 COS/MOS CD4029AK SSD-203 146 COS-.'78 503 COS/MOSCD4016AD SSD-203 84 COS-278 479 COS/MOS CD4030A/1-4 SSD-207 427 737 COS/MOSCD4016AE SSD-203 84 COS-278 479 COS/MOS CD4030AD SSD-203 153 COS-278 503 COS/MOS

CD4016AF SSD-203 84 COS-278 479 COS/MOS CD4030AE SSD-203 153 COS-278 503 COS/MOSCD4016AH SSD-203 307 COS-278 517 COS/MOS CD4030AF SSD-203 153 COS-278 503 COS/MOSCD4016AK SSD-203 84 COS-278 479 COS/MOS CD4030AH SSD-203 307 COS-278 517 COS/MOSCD4017A/1-4 SSD-207 370 741 COS/'~OS CD4030AK SSD-203 153 COS-278 503 COS/MOSCD4017AD SSD-203 90 COS-278 479 COS/MOS CD4031 A/1-4 SSD-207 432 738 COS/MOS

532


Type No. BOOK Page Catalog No. LineType No. BOOK Page Catalog No. Line

Vol. No. Vol. No.

C04031AD SSO-203 158 COS-278 569 CaS/MaS C04046AK SSO-203 226 caS-278 637 caS/MasC04031AE SSO-203 158 caS-278 569 caS/Mas C04047A/1-4 SSO-207 495 745 COSIMOSC04031AH SSO-203 307 caS-278 517 caS/Mas C04047AO SSO-203 233 caS-278 623 caS/MasC04031AK SSO-203 158 caS-278 569 caS/Mas C04047AE SSO-203 233 caS-278 623 caS/MasC04032A/1-4 SSO-207 438 739 caS/Mas C04047AH SSO-203 307 caS-278 517 caS/Mas

C04032AO SSO-203 164 caS-278 503 caS/Mas C04047AK SSO-203 233 caS-278 623 cOS/MasC04032AE SSO-203 164 caS-278 503 caS/Mas C04048A/1-4 SSO-207 506 747 cOS/MasC04032AH SSO-203 307 COS-278 517 caS/Mas C04048AO SSO-203 244 caS-278 636 caS/MasC04032AK SSO-203 164 caS-278 503 caS/Mas C04048AE SSO-203 244 caS-278 636 caS/MasC04033A/1-4 SSO-207 404 733 caslMas C04048AH SSO-203 307 caS-278 517 caslMas

C04033AO SSO-203 126 caS-278 503 caS/Mas C04048AK SSO-203 244 caS-278 636 caS/MasC04033AE SSO-203 126 caS-278 503 caS/Mas C04049A/1-4 SSO-207 513 746 caS/MasC04033AF SSO-203 126 caS-278 503 caS/Mas C04049AO SSO-203 251 caS-278 599 caS/MasC04033AH SSO-203 307 caS-278 517 caS/Mas C04049AE SSO-203 251 caS-278 599 caS/MasC04033AK SSO-203 126 caS-278 503 caS/Mas C04049AF SSO-203 251 caS-278 599 caS/Mas

C04034A/1-4 SSO-207 442 740 caS/Mas C04049AH SSO-203 307 caS-278 517 caS/MasC04034AO SSO-203 169 caS-278 575 caS/Mas C04049AK SSO-203 251 caS-278 599 caS/MasC04034AE SSO-203 169 caS-278 575 caS/Mas C04050A/1-4 SSO-207 513 746 caS/MasC04034AH SSO-203 307 caS-278 517 caS/Mas C04050AO SSO-203 251 caS-278 599 caS/MasC04034AK SSO-203 169 caS-278 575 caS/Mas C04050AE SSO-203 251 caS-278 599 caS/Mas

C04035A/1-4 SSO-207 449 751 caS/Mas C04050AF SSO-203 251 caS-278 599 caS/MasC04035AO SSO-203 177 caS-278 568 caS/Mas C04050AH SSO-203 307 caS·278 517 caS/MasC04035AE SSO-203 177 caS-278 568 caS/Mas C04050AK SSO-203 251 caS-278 599 caS/MasC04035AH SSO-203 307 caS-278 • 517 caS/Mas C04051AO SSO-203 258 CaS-278 Pre!. CaS/MaSC04035AK SSO-203 177 caS-278 568 caS/Mas C04051AE SSO-203 258 CaS-278 Pre!. CaS/MaS

C04036A/1-4 SSO-207 455 749 caS/Mas C04051AK SSO-203 258 caS-278 Prel. caS/MasC04036AO SSO-203 184 CaS-278 613 caS/Mas C04052AO SSO-203 258 CaS-278 Pre!. CaS/MaSC04036AE SSO-203 184 caS-278 613 caS/Mas C04052AE SSO-203 258 CaS·278 Pre!. CaS/MaSC04036AH SSO-203 307 caS-278 517 caS/Mas C04052AK SSO-203 258 caS-278 Prel. caS/MasC04036AK SSO-203 184 CaS-278 613 caslMas C04053AO SSO-203 258 caS-278 Prel. caS/Mas

C04037AO SSO-203 191 CaS-278 576 caS/Mas C04053AE SSO-203 258 CaS-278 Pre!. CaS/MaSC04037AE SSO-203 191 caS-278 576 caS/Mas C04053AK SSO-203 258 caS-278 Prel. caS/MasC04037AF SSO-203 191 CaS-278 576 caS/Mas C04054AO SSO·203 266 caS-278 634 caS/MasC04037AH SSO-203 307 caS-278 517 caS/Mas C04054AE SSO-203 266 caS-278 634 caS/MasC04037AK SSO-203 191 caS-278 576 caS/Mas C04054AH SSO-203 307 caS-278 517 caS/Mas

C04038A/1-4 SSO-207 438 739 caS/Mas C04054AK SSO-203 266 caS-278 634 caS/MasC04038AO SSO-203 164 caS-278 503 caS/Mas C04055AO SSO-203 266 caS-278 634 caS/MasC04038AE SSO·203 164 caS-278 503 caS/Mas C04055AE SSO·203 266 caS-278 634 caS/MasC04038AH SSO-203 307 caS-278 517 caS/Mas C04055AK SSO·203 266 caS-278 634 caS/MasC04038AK SSO-203 164 caS-278 503 caS/Mas C04056AO SSO-203 266 caS-278 634 caS/Mas

C04039A/1-4 SSO-207 455 749 caS/Mas C04056AE SSO-203 266 caS-278 634 caS/MasC04039AO SSO-203 184 caS-278 613 caslMas C04056AH SSO-203 307 caS-278 517 caS/MasC04039AH SSO-203 307 caS-278 517 caS/Mas C04056AK SSO-203 266 caS-278 634 caS/MasC04039AK SSO-203 184 caS-278 613 caS/Mas C04057AO SSO-203 272 caS-278 635 caS/MasC04040A/1-4 SSO-207 461 748 caS/Mas C04057AH SSO-203 307 caS-278 517 caS/Mas

C04040AO SSO-203 197 caS·278 624 caS/Mas C04059A SSO-203 285 CaS-278 Pre!. CaS/MaSC04040AE SSO-203 197 caS-278 624 caS/Mas C04061A SSO-203 291 caS-278 Prel. caS/MasC04040AF SSO-203 197 CaS-278 624 caS/Mas C04062A SSO-203 295 caS-278 PreL caS/MasC04040AH SSO-203 307 CaS-278 517 caS/Mas C04066A SSO-203 303 caS-278 Prel. caS/MasC04040AK SSO-203 197 CaS-278 624 caS/Mas CH2102 SSO-204 737 SPG-201 632 PWR

C04041 A/1-4 SSO-207 469 753 caS/Mas CH2270 SSO-204 737 SPG-201 632 PWRC04041AO SSO-203 203 caS-278 572 caS/Mas CH2405 SSO-204 737 SPG-201 632 PWRC04041AE SSO-203 203 caS-278 572 caS/Mas CH3053 SSO-204 737 SPG-201 632 PWRC04041AH SSO-203 307 caS-278 517 caS/Mas CH3439 SSO-204 737 SPG-201 632 PWRC04041AK SSO-203 203 caS-278 572 caS/Mas CH3440 SSO-204 737 SPG-201 632 PWR

C04042A/1-4 SSO-207 473 756 caS/Mas CH4036 SSO-204 737 SPG-201 632 PWRC04042AO SSO-203 210 caS-278 589 caS/Mas CH4037 SSO-204 737 SPG-201 632 PWRC04042AE SSO-203 210 caS-278 589 caS/Mas CH5320 SSO-204 737 SPG-201 632 PWRC04042AF SSO-203 210 caS-278 589 caS/Mas CH5321 SSO-204 737 SPG-201 632 PWRC04042AH SSO-203 307 caS-278 517 caS/Mas CH5322 SSO-204 737 SPG-201 632 PWR

C04042AK SSO-203 210 caS-278 589 caS/Mas CH5323 SSO-204 737 SPG-201 632 PWRC04043A/1-4 SSO-207 477 754 caS/Mas CH5262 SSO-204 737 SPG-201 632 PWRC04043AO SSO-203 214 caS-278 590 caS/Mas CH6479 SSO-204 737 SPG-201 632 PWRC04043AE SSO-203 214 caS-278 590 caS/Mas 01201A SSO-206 278 THC-500 495 RECTC04043AH SSO-203 307 caS-278 517 caS/Mas 012018 SSO-206 278 THC-500 495 RECT

C04043AK SSO-203 214 caS-278 590 caslMas 012010 SSO-206 278 THC-500 495 RECTC04044A/1-4 SSO-207 477 754 caS/Mas 01201F SSO-206 278 THC-500 495 RECTC04044AO SSO-203 214 caS-278 590 caS/Mas 01201M SSO-206 278 THC-500 495 RECTC04044AE SSO-203 214 caS-278 590 caS/Mas 01201N SSO-206 278 THC-500 495 RECTC04044AH SSO-203 307 caS-278 517 caS/Mas 01201P SSO-206 278 THC-500 495 RECT

C04044AK SSO-203 214 caS-278 590 caS/Mas 02101S SSO-206 298 THC-500 522 RECTC04045A/1-4 SSO-207 482 755 caS/Mas 02103S SSO-206 298 THC-500 522 RECTC04045AO SSO-203 220 caS-278 614 caS/Mas 02103SF SSO-206 298 THC-500 522 RECTC04045AE SSO-203 220 caS-278 614 caS/Mas 02201A SSO-206 313 THC-500 629 RECTC04045AH SSO-203 307 caS-278 517 caS/Mas 022018 SSO-206 313 THC-500 629 RECT

C04045AK SSO-203 220 caS-278 614 caS/Mas 022010 SSO-206 313 THC-500 629 RECTC04046A /1-4 SSO-207 487 752 caslMas 02201F SSO-206 313 THC-500 629 RECTC04046AO SSO-203 226 caS-278 637 caS/Mas 02201M SSO-206 313 THC-500 629 RECTC04046AE SSO-203 226 caS-278 637 caslMas 02201N SSO-206 313 THC-500 629 RECTC04046AH SSO·203 307 caS-278 517 caS/Mas 02406A SSO-206 318 THC-500 663 RECT

533

"",....,""." •..•u••u rvvn02406F 550·206 318 THC·500 663 RECT JAN2N5918 550·207 82 RF02406M 550-206 318 THC-500 663 RECT JAN2N6213 550-207 33 PWR

02412A 550-206 326 THC-500 664 RECT JANTX2N 1486 550-207 26 PWR02412B 550-206 326 THC-500 664 RECT JANTX2N2857 550-207 79 RF02412C 550-206 326 THC-500 664 RECT JANTX2N3055 550·207 28 PWR024120 550-206 326 THC-500 664 RECT JANTX2N3375 550-207 80 RF02412F 550-206 326 THC·500 664 RECT JANTX2N3439 550·207 28 PWR

02412M 550-206 326 THC-500 664 RECT JANTX2N3441 550-207 29 PWR02520A 550·206 334 THC·500 665 RECT JANTX2N3553 550·207 80 RF02520B 550·206 334 THC·500 665 RECT JANTX2N3585 550·207 30 PWR02520C 550-206 334 THC-500 665 RECT JANTX2N4440 550·207 80 RF025200 550-206 334 THC-500 665 RECT JANTX2N5038 550·207 31 PWR

02520F 550·206 334 THC-500 665 RECT JANTX2N5071 550·207 81 RF02520M 550-206 334 THC-500 665 RECT JANTX2N5109 550-207 82 RF02540A 550-206 345 THC-500 580 RECT JANTX2N5416 550-207 31 PWR02540B 550-206 345 THC·500 580 RECT JANTX2N5672 550-207 32 PWR025400 550-206 345 THC-500 580 RECT JANTX2N5840 550-207 32 PWR

02540F 550·206 345 THC-500 580 RECT JANTX2N6213 550·207 33 PWR02540M 550·206 345 THC-500 580 RECT JANTXV2N3375 550-207 80 RF02601A 550-206 308 THC-500 723 RECT JANTXV2N3553 550-207 80 RF02601B 550·206 308 THC-500 723 RECT JANTXV2N4440 550·207 80 RF026010 550-206 308 THC-500 723 RECT R47Ml0 550-205 407 RFT·700 605 RF

02601 F 550-206 308 THC-500 723 RECT R47M13 550-205 407 RFT·700 605 RF02601M 550-206 308 THC-500 723 RECT R47M15 550-205 407 RFT·700 605 RF02601N 550-206 308 THC-500 723 RECT RCA1AOl 550-204 636 PTO·187 651 PWR02600EF 550-206 303 THC-500 354 RECT RCA1A02 550·204 636 PTO-187 651 PWR026010F 550·206 303 THC-500 354 RECT RCA1A03 550-204 636 PTO-187 651 PWR

02601EF 550-206 303 THC-500 354 RECT RCA1A04 550·204 636 PTO·187 651 PWR03202Y 550·206 350 THC-500 577 OIAC RCA1A05 550-204 636 PTO·187 651 PWR03202U 550·206 350 THC.500 577 OIAC RCA1A06 550-204 636 PTO·187 651 PWRHC2000H 550-204 744 566 HYB RCA1A07 550-204 636 PTO·187 651 PWRHC2500 550-204 749 681 HYB RCA1A08 550-204 636 PTO-187 651 PWR

HR2N2857 550-207 83 RF RCA1A09 550-204 636 PTO·187 651 PWRHR2N3866 550·207 85 RF RCA1Al0 550-204 636 PTO-187 651 PWRHR2N5090 550·207 87 RF RCA1Al1 550·204 636 PTO-187 651 PWRHR2N5470 550-207 89 RF RCA1A15 550-204 636 PTO·187 651 PWRHR2N5916 550-207 91 RF RCA1A16 550·204 636 PTO-187 651 PWR

HR2N5918 550-207 93 RF RCA1A17 550-204 636 PTO·187 651 PWRHR2N5919A 550-207 95 RF RCA1A18 550·204 636 PTO-187 651 PWRHR2N5920 550-207 97 RF RCA1A19 550·204 636 PTO-187 651 PWRHR2N5921 550-207 99 RF RCA1BOl 550-204 600 PTO-187 647 PWRHR2N6105 550-207 101 RF RCA1B04 550-204 618 PTO-187 649 PWR

HR2N6265 550-207 103 RF RCA1B05 550·204 627 PTO-187 650 PWRHR2N6266 550-207 105 RF RCA1B06 550·204 609 PTO·187 648 PWRHR2N6267 550-207 107 RF RCA1C03 550-204 347 PTO-187 652 PWRHR2N6268 550-207 109 RF RCA1C04 550-204 647 PTO-187 652 PWRHR2N6269 550-207 109 RF RCA1C05 550-204 575 PTO-187 644 PWR

HR2N6390 550-207 111 RF RCA1C06 550-204 575 PTO·187 644 PWRHR2N6391 550-207 113 RF RCA1C07 550-204 592 PTO·187 646 PWRHR2N6392 550-207 115 RF RCA1C08 550-204 592 PTO·187 646 PWRHR2N6393 550-207 115 RF RCA1C09 550-204 583 PTO·187 645 PWRHR2003 550·207 111 RF RCA1Cl0 550-204 558 PTO-187 642 PWR

HR2005 550-207 113 RF RCA1Cll 550·204 558 PTO·187 642 PWRHR2010 550-207 115 RF RCA1C12 550-204 647 PTO·187 652 PWRHR3001 550-207 117 RF RCA1C13 550-204 647 PTO·187 652 PWRHR3003 550-207 117 RF RCA1C14 550-204 566 PTO·187 643 PWRHR3005 550-207 117 RF RCA1E02 550-204 651 PTO·187 653 PWR

JAN2N918 550-207 78 RF RCA1E03 550-204 651 PTO-187 653 PWRJAN2N1482 550-207 26 PWR RCA29 550-204 232 PTO-187 583 PWRJAN2N1486 550-207 26 PWR RCA29A 550·204 232 PTO-187 583 PWRJAN2N1490 550-207 27 PWR RCA29B 550·204 232 PTO·187 583 PWRJAN2N1493 550-207 78 RF RCA29C 550-204 232 PTO-187 583 PWR

JAN2N2016 550-207 27 PWR RCA30 550·204 237 PTO-187 584 PWRJAN2N2857 550-207 79 RF RCA30A 550·204 237 PTO-187 584 PWRJAN2N3055 550-207 28 PWR RCA30B 550-204 237 PTO·187 584 PWRJAN2N3375 550-207 80 RF RCA30C 550-204 237 PTO·187 584 PWRJAN2N3439 550·207 28 PWR RCA31 550-204 242 PTO-187 585 PWR

JAN2N3441 550-207 29 PWR RCA31A 550-204 242 PTO-187 585 PWRJAN2N3442 550-207 29 PWR RCA31B 550-204 242 PTO-187 585 PWRJAN2N3553 550·207 80 RF RCA31C 550-204 242 PTO·187 585 PWRJAN2N3585 550·207 30 PWR RCA32 550-204 247 PTO·187 586 PWRJAN2N3772 550-207 30 PWR RCA32A 550-204 247 PTO-187 586 PWR

JAN2N3866 550-207 81 RF RCA32B 550-204 247 PTO·187 586 PWRJAN2N4440 550·207 80 RF RCA32C 550-204 247 PTO·187 586 PWRJAN2N5038 550·207 31 PWR RCA41 550-204 252 PTO-187 587 PWRJAN2N5071 550-207 81 RF RCA41A 550·204 252 PTO-187 587 PWRJAN2N5109 550-207 82 RF RCA41B 550·204 252 PTO-187 587 PWR

534

Index to DevicesDATA File Product

DATA File ProductType No. BOOK Page Catalog No. Une

Type No. BOOK Page Catalog No. LineVol.No. Vol. No.

RCA41C 550-204 252 PTO-187 587 PWR 528008 550-206 166 THC-5oo 501 5CRRCA42 550-204 257 PTO-187 588 PWR 528000 550-206 166 THC-5oo 501 5CRRCA42A 550-204 257 PTO-187 588 PWR 537008 550-206 172 THC-500 306 5CRRCA428 550-204 257 PTO-187 588 PWR 537000 550-206 172 THC-500 306 5CRRCA42C 550-204 257 PTO-187 588 PWR 53700M 550-206 172 THC-500 306 5CR

RCA10l 550-204 262 PTO-187 557 PWR 53701M 550-206 192 THC-500 476 5CRRCA102 550-204 262 PTO-187 557 PWR 537025F 550-206 194 THC-5oo 522 5CRRCA103 550-204 262 PTO-;87 557 PWR 537035F 550-206 194 THC-500 522 5CRRCA104 550-204 262 PTO-187 557 PWR 53704A 550-206 180 THC-500 690 5CRRCA105 550-204 266 PTO-187 556 PWR 537048 550-206 180 THC-5oo 690 5CR

RCA201 550-204 262 PTO-187 557 PWR 537040 550-206 180 THC-5oo 690 5CRRCA202 550-204 262 PTO-187 557 PWR 53704J'y1 550-206 180 THC-5oo 690 5CRRCA203 550-204 262 PTO-187 557 PWR 537045 550-206 180 THC-500 690 5CRRCA204 550-204 262 PTO-187 557 PWR 53705M 550-206 187 THC-5oo 354 5CRRCA205 550-204 266 PTO-187 556 PWR 53706M 550-206 187 THC-500 354 5CR

RCA370 550-204 270 PTO-187 558 PWR 53714A 550-206 180 THC-500 690 5CRRCA371 550-204 270 PTO-187 558 PWR 537148 550-206 180 THC-500 690 5CRRCA410 550-204 326 PTO-187 509 PWR 537140 550-206 180 THC-5oo 690 5CRRCA411 550-204 332 PTO-187 510 PWR 53714M 550-206 180 THC-500 690 5CRRCA413 550-204 338 PTO-187 511 PWR 537145 550-206 180 THC-500 690 5CR

RCA423 550-204 344 PTO-187 512 PWR 538000 550-206 199 THC-500 639 ITRRCA431 550-204 350 PTO-187 513 PWR 53800E 550-206 199 THC-5oo 639 ITRRCA520 550-204 270 PTO-187 558 PWR 53800EF 550-206 199 THC-5oo 639 ITRRCA521 550-204 270 PTO-187 558 PWR 53800M 550-206 199 THC-5oo 639 ITRRCA1000 550-204 524 PTO-187 594 PWR 53800MF 550·206 199 THC-500 639 ITR

RCA100l 550-204 524 PTO-187 594 PWR 538005 550-206 199 THC-5oo 639 ITRRCA2003 550-205 261 RFT-700 626 RF 538005F 550-206 199 THC-5oo 639 ITRRCA2005 550-205 265 RFT-700 627 RF 56200A 550-206 210 THC-500 418 5CRRCA2010 550-205 270 RFT-700 628 RF 562008 550-206 210 THC-500 418 5CRRCA3001 550-205 401 RFT-700 657 RF 562000 550-206 210 THC-500 418 5CR

RCA3003 550-205 401 RFT-700 657 RF 56200M 550-206 210 THC-500 418 5CRRCA3005 550-205 401 RFT-700 657 RF 56210A 550-206 210 THC-500 418 5CRRCA3054 550-204 53 PTO-187 618 PWR 56210B 550-206 210 THC-500 418 5CRRCA3055 550-204 53 PTO-187 618 PWR 562100 550-206 210 THC-500 418 5CRRCA3441 550-204 77 PTO-187 666 PWR 56210M 550-206 210 THC-5oo 418 5CR

RCA6263 550-204 77 PTO-187 666 PWR 56220A 550-206 210 THC-500 418 5CR52060A 550-206 138 THC-500 654 5CR 562208 550-206 210 THC-5oo 418 5CR520608 550-206 138 THC-500 654 5CR 562200 550-206 210 THC-500 418 5CR52060C 550-206 138 THC-500 654 5CR 56220M 550-206 210 THC-500 418 5CR520600 550-206 138 THC-500 654 5CR 56400N 550-206 218 THC-500 578 5CR

52060E 550-206 138 THC-500 654 5CR 5641 ON 550-206 218 THC-500 578 5CR52060F 550-206 138 THC-500 654 5CR 56420A 550-206 218 THC-500 578 5CR52060M 550-206 138 THC-500 654 5CR 564208 550-206 218 THC-500 578 5CR520600 550-206 138 THC-500 654 5CR 564200 550-206 218 THC-500 578 5CR52060Y 550-206 138 THC-500 654 5CR 56420M 550-206 218 THC-500 578 5CR52061A 550-206 138 THC-500 654 5CR 56420N 550-206 218 THC-500 578 5CR520618 550-206 138 THC-500 654 5CR 56431M 550-206 228 THC-500 247 5CR52061C 550-206 138 THC-500 654 5CR 57430M 550-206 238 THC-500 408 5CR520810 550-206 138 THC-500 654 5CR 57432M 550-206 245 THC-5oo 724 5CR52061E 550-206 138 THC-500 654 5CR T2300A 550-206 33 THC-5oo 470 TRI52061 F 550-206 138 THC-500 654 5CR T23008 550-206 33 THC-5oo 470 TRI52061M 550-206 138 THC-5oo 654 5CR T23000 550-206 33 THC-500 470 TRI520610 550-206 138 THC-500 654 5CR T2301A 550-206 40 THC-500 431 TRI52061Y 550-206 138 THC-500 654 5CR T23018 550-206 40 THC-500 431 TRI52062A 550-206 138 THC-500 654 5CR T23010 550-206 40 THC-500 431 TRI520628 550-206 138 THC-500 654 5CR T2302A 550-206 33 THC-500 470 TRI52062C 550-206 138 THC-500 654 5CR T23028 550-206 33 THC-500 470 TRI520620 550-206 138 THC-500 654 5CR T23020 550-206 33 THC-500 470 TRI52062E 550-206 138 THC-500 654 5CR T2304B 550-206 41 THC-5oo 441 TRI52062F 550-206 138 THC-500 654 5CR T23040 550-206 41 THC-5oo 441 TRI

52062M 550-206 138 THC-500 654 5CR T23058 550-206 41 THC-5oo 441 TRI520620 550-206 138 THC-500 654 5CR T23050 550-206 41 THC-5oo 441 TRI52062Y 550-206 138 THC-500 654 5CR T2306A 550-206 47 THC-500 406 TRI52400A 550-206 151 THC-5oo 567 5CR T23068 550-206 47 THC-5oo 406 TRI524008 550-206 151 THC-500 567 5CR T23060 550-206 47 THC-500 406 TRI

524000 550-206 151 THC-500 567 5CR T2310A 550-206 33 THC-500 470 TRI52400M 550-206 151 THC-500 567 5CR T23108 550-206 33 THC-500 470 TRI526008 550-206 156 THC-500 496 5CR T23100 550-206 33 THC-500 470 TRI526000 550-206 156 THC-500 496 5CR T2311A 550-206 40 THC-500 431 TRI52600M 550-206 156 THC-500 496 5CR T23118 550-206 40 THC-5oo 431 TRI

526108 550-206 156 THC-500 496 5CR T23110 550-206 40 THC-500 431 TRI526100 550-206 156 THC-5oo 496 5CR T2312A 550-206 33 THC-500 470 TRI52610M 550-206 156 THC-500 496 5CR T23128 550-206 33 THC-500 470 TRI526208 550-206 156 THC-500 496 5CR T23120 550-206 33 THC-5oo 470 TRI526200 550-206 156 THC-500 496 5CR T2313A 550-206 28 THC-500 414 TRI

52620M 550-206 156 THC-5oo 496 5CR T23138 550-206 28 THC-5oo 414 TRI527108 550-206 164 THC-500 266 5CR T23130 550-206 28 THC-500 414 TRI527100 550-206 164 THC-500 266 5CR T2313M 550-206 28 THC-5oo 414 TRI52710M 550-206 164 THC-500 266 5CR T2316A 550-206 47 THC-500 406 TRI52800A 550-206 166 THC-500 501 5CR T23168 550-206 47 THC-500 406 TRI


Type No. BOOK Page Catalog No. line Type No. BOOK Page Catalog No. LineVol. No. Vol. No.

T23160 550-206 47 THC·500 406 TRI T6401M 550·206 107 THC-500 459 TRIT2500B 550-206 49 THC·500 615 TRI T6404B 550-206 114 THC-500 487 TRIT25000 550·~06 49 THC-500 615 TRI T64040 550-206 114 THC·500 487 TRIT2700B 550-206 62 THC·500 351 TRI T6405B 550·206 114 THC·500 487 TRIT27000 550·206 62 THC-500 351 TRI T64050 550·206 114 THC-500 487 TRI

T2706B 550-206 47 THC·500 406 TRI T6406B 550·206 47 THC-500 406 TRIT27060 550-206 47 THC·500 406 TRI T64060 550-206 47 THC-500 406 TRIT2710B 550-206 62 THC·500 351 TRI T6406M 550-206 47 THC-500 406 TRIT27100 550-206 62 THC-500 351 TRI T6407B 550·206 47 THC·500 406 TRIT2716B 550·206 47 THC-500 406 TRI T64070 550-206 47 THC-500 406 TRI

T27160 550·206 47 THC·500 406 TRI T6407M 550·206 47 THC-500 406 TRIT2800B 550-206 69 THC·500 364 TRI T641 ON 550-206 55 THC·500 593 TRIT28000 550-206 69 THC·500 364 TRI T6411B 550·206 107 THC·500 459 TRIT2800M 550-206 69 THC·500 364 TRI T64110 550·206 107 THC-500 459 TRIT28010F 550-206 75 THC-500 493 TRI T6411M 550-206 107 THC-500 459 TRI

T2806B 550-206 47 THC·500 406 TRI T6414B 550·206 114 THC·500 487 TRIT28060 550-206 47 THC·500 406 TRI T64140 550·206 114 THC·500 487 TRIT2850A 550-206 79 THC-500 540 TRI T6415B 550-206 114 THC-500 487 TRIT2850B 550·206 79 THC·500 540 TRI T64150 550·206 114 THC·500 487 TRIT28500 550·206 79 THC·500 540 TRI T6416B 550-206 47 THC-500 406 TRI

T4100M 550-206 85 THC-500 458 TRI T64160 550·206 47 THC-500 406 TRIT4101M 550·206 92 THC·500 457 TRI T6416M 550·206 47 THC-500 406 TRIT4103B 550·206 99 THC·500 443 TRI T6417B 550-206 47 THC·500 406 TRIT41030 550-206 99 THC-500 443 TRI T64170 550·206 47 THC·500 406 TRIT4104B 550-206 99 THC-500 443 TRI T6417M 550·206 47 THC-500 406 TRI

T41040 550·206 99 THC·500 443 TRI T6420B 550·206 55 THC·500 593 TRIT4105B 550-206 99 THC-500 443 TRI T64200 550-206 55 THC·206 593 TRIT41050 550-206 99 THC-500 443 TRI T6420M 550·206 55 THC·500 593 TRIT4106B 550·206 47 THC·500 406 TRI T6420N 550·206 55 THC·500 593 TRIT41060 550·206 47 THC·500 406 TRI T6421 B 550-206 107 THC-500 459 TRI

T4107B 550-206 47 THC-500 406 TRI T6421 0 550-206 107 THC-500 459 TRIT41070 550-206 47 THC-500 406 TRI T6421M 550-206 107 THC·500 459 TRIT4110M 550-206 85 THC-5Oo 458 TRI T8401B 550·206 122 THC·5Oo 725 TRIT4111M 550-206 92 THC-5Oo 457 TRI T84010 550·206 122 THC-5Oo 725 TRIT41138 550·206 99 THC-50o 443 TRI T8401M 550-206 122 THC-5Oo 725 TRI

T41130 550-206 99 THC-500 443 TRI T8411B 550·206 122 THC-500 725 TRIT4114B 550-206 99 THC-50o 443 TRI T8411D 550-206 122 THC-500 725 TRIT41140 550-206 99 THC-5Oo 443 TRI T8411M 550-206 122 THC-500 725 TRIT4115B 550-206 99 THC-500 443 TRI T8421B 550-206 122 THC·500 725 TRIT41150 550-206 99 THC-500 443 TRI T8421 0 550·206 122 THC·500 725 TRI

T4116B 550-206 47 THC-500 406 TRI T8421M 550·206 122 THC-500 725 TRIT41160 550·206 47 THC·500 406 TRI T84308 550-206 130 THC·500 549 TRIT4117B 550·206 47 THC·500 406 TRI T84300 550·206 130 THC·500 549 TRIT41170 550-206 47 THC·500 406 TRI T8430M 550·206 130 THC-500 549 TRIT4120B 550·206 85 THC·5Oo 458 TRI T8440B 550-206 130 THC-5Oo 549 TRIT41200 550-206 85 THC·500 458 TRI T84400 550·206 130 THC-5Oo 549 TRIT4120M 550-206 85 THC-5Oo 458 TRI T8440M 550·206 130 THC-5Oo 549 TRIT4121B 550-206 92 THC-5Oo 457 TRI T8450B 550·206 130 THC-500 549 TRIT41210 550-206 92 THC-5Oo 457 TRI T84500 550-206 130 THC·5Oo 549 TRIT4121M 550·206 92 THC·5Oo 457 TRI T8450M 550·206 130 THC·5Oo 549 TRIT4706B 550·206 47 THC-5Oo 406 TRIT47060 550-206 47 THC-5Oo 406 TRIT6400N 550-206 55 THC-5Oo 593 TRIT6401B 550-206 107 THC-500 459 TRIT64010 550-206 107 THC-5Oo 459 TRI

The 1974 RCA Triac SCR and Diacs Data Book

Documents

Transcript of The 1974 RCA Triac SCR and Diacs Data Book