Test of mini-pad silicon sensor for PHENIX MPC- EX
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Transcript of Test of mini-pad silicon sensor for PHENIX MPC- EX
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Dahee Kim(Ewha womans university)
for MPC-EX collaboration
TEST OF MINI-PAD SILICON SENSOR FOR PHENIX MPC-EX
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Contents• We report test results of prototype silicon sensors for PHENIX MPC-EX. We describe basic theory and suggest key tests for silicon sensor.
Suggested and reported key tests are
• CV characteristics
• IV characteristics• & Electric circuitry test
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Basic theory• Operation of PIN sensor.• Electron-hole generation & depletion region.
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Capacitance • Relation to depletion thickness.
17.0pF
Fulldepletion region is about 23.5pF
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Simulation about CV characteristic
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Capacitance
(V)biasV0 20 40 60 80 100 120 140 160 180
)-2
(F21/
C
0
2000
4000
6000
8000
100001810´
-2F-1 V19 = 5.09 x 102 AÎm r2
Full depletion voltage
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• Scaling with area on test pattern.
)2mmArea(210 310 410
C(F
)
-1110
-1010
-910
Scaling with area on YS02 test pattern.
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Current• Shockley diode equation(Ideal case)
•
• Simplifying idealization (drift, diffusion, thermal recombination- generation).
• Not considered : Surface leakage current, high injection, defect etc.
• With high injection(large I ),
at 300K
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Forward bias current
(V)biasV0.2 0.4 0.6
I (A
)
-710
-610
-510
-410
-310
-210
YS11 test pattern, Forward-bias characteristics
TVV
e0I=IT2V
V
e0I=IIdeal region
High injection region
Serie
s re
sis t
anc e
dom
inat
ed
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(V)biasV0.2 0.4 0.6
I (A
)
0
0.002
0.004
0.006
0.008YS11 test pattern, Forward-bias characteristics
< 18effR W 0.6 (V)» bias
@ V
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Reverse bias current(Leakage current)
• Source of leakage current
• Volume term• Thermal recombination-generation leakage current• Defect
• Surface leakage current• Radiation(include light and cosmic ray etc..)
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Guard ring structure
PADs of Sensor
Bonding PADsBias
Guardring
Floating Guardring(3 layer structure)
Edge Rounding
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Effect of Bias Guard Ring YS04_L real sensor
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Effect of Dicing
Before dicingFloating Guard Ring
YS09_L real sensor
After dicing
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Electric circuit test• We measured resistance between neighboring channels. Small fraction of them had short. Current yield ~ 30%. Statistics suggest the short is between metal traces. Stringent metal etching process is expected to cure the problem.
30 m30 m
1.5 cm1.5 cm3 cm
123 4
Cut line
6 cmElectric short happens between neighboring channels.
The short frequency is proportional to trace overlap.
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Summary• We measured full depletion voltage for 425μm wafer to be 35V which corresponds to resistivity ~15,000 Ωcm.
• No breakdown is observed until the reverse bias voltage of 250V.
• We observed low leakage current less than 1μA for the whole sensor of 6 x 6 cm.
• We identified a small number of shorts between neighboring channels and attribute the problem to close metal traces. We propose further etching process for metal layer and/or increased space between metal traces.