Tecport E beam EvaporatorEvaporated thin films

Process parameters

Process Parameters

Base pressure: 4E-6 Torr Deposition pressure: 8.71E-6 Torr Rate of deposition: 1Å/s Voltage applied: 7kV current : during deposition 82mA Pump down time: 2hrs 35min Deposition time: 35min 27s rise and soak time: 10min ( total)

Al2O3

AnalysisDektak Surface profiler Thickness: 150.5nmEllipsometer thickness : 133nm

Al2O3 RESULTS

Process Parameters Base pressure: 3E-6 Torr Deposition pressure: 4.86E-5 Torr 1 sccm O2 was introduced during deposition (O2 started

1 min before deposition) Rate of deposition: 1Å/s Voltage applied: 7kV current : during deposition 170mA Pump down time: 4hrs 35min Deposition time: 40min 30s rise and soak time: 21min( total)

Al2O3 with O2

Al2O3 with O2 results

AnalysisDektak Surface profilerThickness: 150nmEllipsometerthickness : 144nm

Process Parameters

Base pressure: 2E-6 Torr Deposition pressure: 6E-6 Torr Rate of deposition: 1Å/s Voltage applied: 7kV current : during deposition 82mA Deposition time: 29min 34s rise and soak time: 10min ( total)

SiO2

Process Parameters

Base pressure: 2E-6 Torr Deposition pressure: 4e-5 Torr Rate of deposition: 1Å/s Voltage applied: 7kV current : during deposition 30mA Deposition time: 29min 34s rise and soak time: 10min ( total)

SiO2 with O2

SiO2 vs SiO2 with O2 RESULTS

200 300 400 500 600 700 800 900 1000 11000

0.001

0.002

0.003

0.004

0.005

0.006

0.007

0.008

0.009

wavelength vs extinction coef-ficient

k 1k2

wavelength

exti

ncti

on c

oeffi

cie

nt

AnalysisDektak Surface profilerThickness: 134nmThickness with O2: 150nm

200 300 400 500 600 700 800 900 1000 11001.38

1.4

1.42

1.44

1.46

1.48

1.5

1.52

1.54

wavelength vs refractive index

n1n2

wavelength

refr

acti

ve index

Process Parameters

Base pressure: 3E-6 Torr Deposition pressure: 9E-5 Torr Rate of deposition: 1Å/s Voltage applied: 7kV current : during deposition 65mA Deposition time: 32min rise and soak time: 23min ( total)

Aluminum (Al) 50nm

Process Parameters

Base pressure: 4.8E-6 Torr Deposition pressure: 7E-6 Torr Rate of deposition: 1Å/s Voltage applied: 7kV current : during deposition 37mA Deposition time: 22min 31s rise and soak time: 10min ( total)

Chromium(Cr) 50nm

Process Parameters

Base pressure: 4.05E-6 Torr Deposition pressure: 2.04E-6 Torr Rate of deposition: 1Å/s Voltage applied: 7kV current : during deposition 126mA Deposition time: 25min 34s rise and soak time: 10min ( total)

Gold(Au) 50nm