Technologies des Semi-conducteurs · Table 1.1. The periodic table of the elements Si Ge3 2 AS33...

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Technologie des Semi-conducteurs Cour N°1

Transcript of Technologies des Semi-conducteurs · Table 1.1. The periodic table of the elements Si Ge3 2 AS33...

Page 1: Technologies des Semi-conducteurs · Table 1.1. The periodic table of the elements Si Ge3 2 AS33 sn50 Sb5 Bi8 08 s16 se34 Te52 15 C117 P084 At85 Li3 Nal b37 Fr87 Be4 Mg12 13 ca20

Technologie des Semi-conducteurs

Cour N°1

Page 2: Technologies des Semi-conducteurs · Table 1.1. The periodic table of the elements Si Ge3 2 AS33 sn50 Sb5 Bi8 08 s16 se34 Te52 15 C117 P084 At85 Li3 Nal b37 Fr87 Be4 Mg12 13 ca20

Prix Nobel 1953

1947: le premier transistor(32mm) (J.Barden,W.Shockley,W. Brattain)

Page 3: Technologies des Semi-conducteurs · Table 1.1. The periodic table of the elements Si Ge3 2 AS33 sn50 Sb5 Bi8 08 s16 se34 Te52 15 C117 P084 At85 Li3 Nal b37 Fr87 Be4 Mg12 13 ca20

1947: le premier transistor

(J.Barden,W.Shockley,W. Brattain)

Page 4: Technologies des Semi-conducteurs · Table 1.1. The periodic table of the elements Si Ge3 2 AS33 sn50 Sb5 Bi8 08 s16 se34 Te52 15 C117 P084 At85 Li3 Nal b37 Fr87 Be4 Mg12 13 ca20

1947: le premier transistor

(J.Barden,W.Shockley,W. Brattain)

Page 5: Technologies des Semi-conducteurs · Table 1.1. The periodic table of the elements Si Ge3 2 AS33 sn50 Sb5 Bi8 08 s16 se34 Te52 15 C117 P084 At85 Li3 Nal b37 Fr87 Be4 Mg12 13 ca20

1947: le premier transistor

(J.Barden,W.Shockley,W. Brattain)

Page 6: Technologies des Semi-conducteurs · Table 1.1. The periodic table of the elements Si Ge3 2 AS33 sn50 Sb5 Bi8 08 s16 se34 Te52 15 C117 P084 At85 Li3 Nal b37 Fr87 Be4 Mg12 13 ca20

1949: le premier transistor a Jonction

Page 7: Technologies des Semi-conducteurs · Table 1.1. The periodic table of the elements Si Ge3 2 AS33 sn50 Sb5 Bi8 08 s16 se34 Te52 15 C117 P084 At85 Li3 Nal b37 Fr87 Be4 Mg12 13 ca20

1948: le premier transistor Français

Aout 1948: le Brevet du tansistron

Page 8: Technologies des Semi-conducteurs · Table 1.1. The periodic table of the elements Si Ge3 2 AS33 sn50 Sb5 Bi8 08 s16 se34 Te52 15 C117 P084 At85 Li3 Nal b37 Fr87 Be4 Mg12 13 ca20

le premier circuit intégré, 1958 (germanium, 11×1.7mm2). le premier circuit intégré planaire , 1959 (silicon, diameter: 1.5mm)

Page 9: Technologies des Semi-conducteurs · Table 1.1. The periodic table of the elements Si Ge3 2 AS33 sn50 Sb5 Bi8 08 s16 se34 Te52 15 C117 P084 At85 Li3 Nal b37 Fr87 Be4 Mg12 13 ca20

The Intel Pentium 4 microprocessor (2000), circuit lines: 0.18 μm,42 million transistors, clock speed: 1.5 GHz

Page 10: Technologies des Semi-conducteurs · Table 1.1. The periodic table of the elements Si Ge3 2 AS33 sn50 Sb5 Bi8 08 s16 se34 Te52 15 C117 P084 At85 Li3 Nal b37 Fr87 Be4 Mg12 13 ca20
Page 11: Technologies des Semi-conducteurs · Table 1.1. The periodic table of the elements Si Ge3 2 AS33 sn50 Sb5 Bi8 08 s16 se34 Te52 15 C117 P084 At85 Li3 Nal b37 Fr87 Be4 Mg12 13 ca20

Les Semi-conducteurs

Page 12: Technologies des Semi-conducteurs · Table 1.1. The periodic table of the elements Si Ge3 2 AS33 sn50 Sb5 Bi8 08 s16 se34 Te52 15 C117 P084 At85 Li3 Nal b37 Fr87 Be4 Mg12 13 ca20

Les Semi-conducteurs

Page 13: Technologies des Semi-conducteurs · Table 1.1. The periodic table of the elements Si Ge3 2 AS33 sn50 Sb5 Bi8 08 s16 se34 Te52 15 C117 P084 At85 Li3 Nal b37 Fr87 Be4 Mg12 13 ca20

Diagramme de bande Si (bande indirect)

Page 14: Technologies des Semi-conducteurs · Table 1.1. The periodic table of the elements Si Ge3 2 AS33 sn50 Sb5 Bi8 08 s16 se34 Te52 15 C117 P084 At85 Li3 Nal b37 Fr87 Be4 Mg12 13 ca20

Diagramme de bande GaAs (bande direct)

Page 15: Technologies des Semi-conducteurs · Table 1.1. The periodic table of the elements Si Ge3 2 AS33 sn50 Sb5 Bi8 08 s16 se34 Te52 15 C117 P084 At85 Li3 Nal b37 Fr87 Be4 Mg12 13 ca20

Diamant

Vecteurs de base: A1=

Blende de zinc

Page 16: Technologies des Semi-conducteurs · Table 1.1. The periodic table of the elements Si Ge3 2 AS33 sn50 Sb5 Bi8 08 s16 se34 Te52 15 C117 P084 At85 Li3 Nal b37 Fr87 Be4 Mg12 13 ca20

Structure réciproque

Page 17: Technologies des Semi-conducteurs · Table 1.1. The periodic table of the elements Si Ge3 2 AS33 sn50 Sb5 Bi8 08 s16 se34 Te52 15 C117 P084 At85 Li3 Nal b37 Fr87 Be4 Mg12 13 ca20

Propriétés Physiques des Semi-conducteurs

Propriétés Si Ge GaAs Unité

Nombre Atomique Masse Atomique Densité Température de fusion Paramètre de Réseau Atome/cm3 Bande interdite

14 28.08 2.33 1420 5.43 5*E22 1.12

32 72.60 5.33 937 5.66 4.42 E22 0.68

--- 144.6 5.32 1237 5.65 2.21E22 1.4

g/mole g/cm3 C° A° Atom/Cm3 ev


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