TB235 - Data Package - The MicroWave Laboratory...

13
PH:(8 805)484-4210 FAX:(805)48 84-3393 1110 T Frequenc Po Gain= Vd Id Efficie L Avenida Acas TF235 cy=30-512 ut=100W = 19-21.5 ds=28Vdc dq=1.2A ncy= 48-5 LR2401 so, Camarillo C 2 MHz dB 51% CA 93012 Ju ww une 11, 2014 ww.polyfet.com 4 m

Transcript of TB235 - Data Package - The MicroWave Laboratory...

Page 1: TB235 - Data Package - The MicroWave Laboratory Groupmwl.diet.uniroma1.it/people/pisa/SISTEMI_RF/MATERIAL… ·  · 2015-10-31Q1 LDMOS Polyfet RF Devices LR2401 C1,C2,C3,C12,C14,C15,

PH:(8

805)484-4210 FAX:(805)4884-3393 1110

TFrequenc

PoGain=

VdId

EfficieL

Avenida Acas

TF235cy=30-512ut=100W

= 19-21.5 ds=28Vdcdq=1.2A ncy= 48-5

LR2401

so, Camarillo C

2 MHz

dB

51%

CA 93012

Ju

ww

une 11, 2014

ww.polyfet.com

4

m

Page 2: TB235 - Data Package - The MicroWave Laboratory Groupmwl.diet.uniroma1.it/people/pisa/SISTEMI_RF/MATERIAL… ·  · 2015-10-31Q1 LDMOS Polyfet RF Devices LR2401 C1,C2,C3,C12,C14,C15,

June 11, 2014

PH:(805)484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com

18.5

19.5

20.5

21.5

22.5

0.0

45.0

90.0

135.0

180.0

0 0.4 0.8 1.2 1.6 2

Gain (dB

)P

out (

W)

Pin (W)

TB235 Pout/Gain vs Pin: Freq = 30 MHz, Vds = 28Vdc, Idq = 1.2A

PoutGain

Page 3: TB235 - Data Package - The MicroWave Laboratory Groupmwl.diet.uniroma1.it/people/pisa/SISTEMI_RF/MATERIAL… ·  · 2015-10-31Q1 LDMOS Polyfet RF Devices LR2401 C1,C2,C3,C12,C14,C15,

June 11, 2014

PH:(805)484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com

18.0

19.0

20.0

21.0

22.0

0.0

40.0

80.0

120.0

160.0

0 0.4 0.8 1.2 1.6 2

Gain (dB

)P

out (

W)

Pin (W)

TB235 Pout/Gain vs Pin: Freq = 250 MHz, Vds = 28Vdc, Idq = 1.2A

PoutGain

Page 4: TB235 - Data Package - The MicroWave Laboratory Groupmwl.diet.uniroma1.it/people/pisa/SISTEMI_RF/MATERIAL… ·  · 2015-10-31Q1 LDMOS Polyfet RF Devices LR2401 C1,C2,C3,C12,C14,C15,

June 11, 2014

PH:(805)484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com

16.4

17.3

18.2

19.1

20.0

0.0

40.0

80.0

120.0

160.0

0 0.6 1.2 1.8 2.4 3

Gain (dB

)P

out (

W)

Pin (W)

TB235 Pout/Gain vs Pin: Freq = 512 MHz, Vds = 28Vdc, Idq = 1.2A

PoutGain

Page 5: TB235 - Data Package - The MicroWave Laboratory Groupmwl.diet.uniroma1.it/people/pisa/SISTEMI_RF/MATERIAL… ·  · 2015-10-31Q1 LDMOS Polyfet RF Devices LR2401 C1,C2,C3,C12,C14,C15,

June 11, 2014

PH:(805)484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com

20

40

60

80

100

0

7

14

21

28

0 100 200 300 400 500

Eff (%

)Gai

n (d

B)

Freq (MHz)

TB235 Gain/Efficiency vs Freq: Pout = 100W, Vds = 28Vdc, Idq = 1.2A

GainEff

Page 6: TB235 - Data Package - The MicroWave Laboratory Groupmwl.diet.uniroma1.it/people/pisa/SISTEMI_RF/MATERIAL… ·  · 2015-10-31Q1 LDMOS Polyfet RF Devices LR2401 C1,C2,C3,C12,C14,C15,

June 11, 2014

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40

55

70

85

100

0

7

14

21

28

0 100 200 300 400 500

Eff (%

)Gai

n (d

B)

Freq (MHz)

TB235 Gain/Efficiency vs Freq: Pout = 150W, Vds = 28Vdc, Idq = 1.2A

GainEff

Page 7: TB235 - Data Package - The MicroWave Laboratory Groupmwl.diet.uniroma1.it/people/pisa/SISTEMI_RF/MATERIAL… ·  · 2015-10-31Q1 LDMOS Polyfet RF Devices LR2401 C1,C2,C3,C12,C14,C15,

June 11, 2014

PH:(805)484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com

110

138

166

194

222

0 100 200 300 400 500

Pow

er (W

)

Freq (MHz)

TB235 P1dB/P3dB vs Freq: Vds = 28Vdc, Idq = 1.2A

P1dBP3dB

Page 8: TB235 - Data Package - The MicroWave Laboratory Groupmwl.diet.uniroma1.it/people/pisa/SISTEMI_RF/MATERIAL… ·  · 2015-10-31Q1 LDMOS Polyfet RF Devices LR2401 C1,C2,C3,C12,C14,C15,

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PH:(805)484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com

-50

-40

-30

-20

-10

0

0 100 200 300 400 500

IMD

(dB

c)

Freq (MHz)

TB235 IMD vs Freq: PEP = 100W, Sep = 100kHz, Vds = 28Vdc, Idq = 1.2A

IM3

IM5

Page 9: TB235 - Data Package - The MicroWave Laboratory Groupmwl.diet.uniroma1.it/people/pisa/SISTEMI_RF/MATERIAL… ·  · 2015-10-31Q1 LDMOS Polyfet RF Devices LR2401 C1,C2,C3,C12,C14,C15,

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-75

-60

-45

-30

-15

0

15

0 100 200 300 400 500

Har

mon

ic A

ttenu

atio

n (d

Bc)

Freq (MHz)

TB235 Harmonics vs Freq: Pout = 100W, Vds = 28Vdc, Idq = 1.2A

Harm2

Harm3

Page 10: TB235 - Data Package - The MicroWave Laboratory Groupmwl.diet.uniroma1.it/people/pisa/SISTEMI_RF/MATERIAL… ·  · 2015-10-31Q1 LDMOS Polyfet RF Devices LR2401 C1,C2,C3,C12,C14,C15,

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TB235: Vds=28Vdc, Idq=1.2A, Pin=0dBm

Page 11: TB235 - Data Package - The MicroWave Laboratory Groupmwl.diet.uniroma1.it/people/pisa/SISTEMI_RF/MATERIAL… ·  · 2015-10-31Q1 LDMOS Polyfet RF Devices LR2401 C1,C2,C3,C12,C14,C15,

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C3510uF

0

U1LT3010EMS8E#PBF

81

52

VINVOUT

SHDNSENSE/ADJ

F7, 1-turnCHOKE FERRITE

C341uF

J2SMA Female

1

2

Vdc = 28Vdc, Idq = 1.2A

TB235, 30-512 MHz, 100W

1 1Wednesday, June 11, 2014

Title

Size Document Number Rev

Date: Sheet of

T2b & F3

C321nF

C91000pF

C1810nF

0

Q1

C2110nF

R7110 Ohm

C1210nF

0

R510K Ohm

J1SMA Female

1

2

R1410k Ohm

C280.1uF

C313.3uF

T1 & F1

C220.1uF

C331uF

0

C53.9pF

C2710uF

T3b & F5

R2

200 Ohm

R11

4.7K

C112.3pF

0

R810K

LR2401

C16220uF

T3a & F4

R1230 Ohm

C250.1uF

0

C310nF

C234.7uF

T4 & F6

C1510nF

L2

81-BLM21BD102SH1D

C110nF

POT1

10K Ohm

C1410nF

C264.7uF

R422 Ohm

R1

200 Ohm

0

L3aircoil 20turns 18AWG I.D 195mils

R1056K

C3047uF

R322 Ohm

C2410uF

C171000pF

C201000pF

C42.0pF

t RT1=1K

THERMISTOR

C210nF

0

-

+

U2

LM7321MF/NOPB3

41

52

R1510 Ohm

L1

81-BLM21BD102SH1D

C743pF

C81000pF

C2910uF

R910K

C190.1uF

+28V

T2a & F2

Page 13: TB235 - Data Package - The MicroWave Laboratory Groupmwl.diet.uniroma1.it/people/pisa/SISTEMI_RF/MATERIAL… ·  · 2015-10-31Q1 LDMOS Polyfet RF Devices LR2401 C1,C2,C3,C12,C14,C15,

June 11, 2014

PH:(805)484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com

TB235NOMENCLATURE DESCRIPTION VENDER VENDER PART #

C4 2.0pF +/-2% Ultra-low ESR, Microwave Cap., 1111N Passive Plus, Inc 1111N2R0BW501C5 3.9pF+/-2% Ultra-low ESR, Microwave Cap., 1111N Passive Plus, Inc 1111N3R9BW501C7 43pF +/-2% Ultra-low ESR, Microwave Cap., 1111N Passive Plus, Inc 1111N430BW501

C11 2.3pF +/-2% Ultra-low ESR, Microwave Cap., 1111N Passive Plus, Inc 1111N2R3BW501C16 Aluminum Electrolytic Capacitors - SMD 35Volts 220uF 20% United Chemi-Con EMZJ350ADA221MHA0G

C19,C22,C25,C28 0.1uF +/-10% RF By-Pass Capacitors,1111X Passive Plus, Inc 1111X104KW500C24,C27 10uF TANCERAM HIGH CAP. SMD 1206 Passive Plus, Inc PPI-GMC31X5R106K10C23,C26 4.7uF TANCERAM HIGH CAP. SMD 1206 Passive Plus, Inc PPI-GMC31X7R475K25NT

C8,C9,C17,C20 1000pF +/-2% Ultra-low ESR, Microwave Cap., 1111N Passive Plus, Inc 1111N102GW500

C29 10uF 63V 20% AVX Tantalum Capacitors AVX TCJE106M063R0100C30 Aluminum Electrolytic Capacitors - SMD 47UF 35V TK SMD Panasonic EE-TK1V470PC31 3.3uF TANCERAM HIGH CAP. SMD 1206 Johanson Dielectrics 100r18x335KV4EC32 1nF 10% Hi-Q/Low ESR Passive Plus, Inc 0505x102KW500

C33,C34 1uF 10%TAMCERAM HIGH CAP. SMD 603 Johanson Dielectrics 250r14x105kv4tC35 10uF 10%TAMCERAM HIGH CAP. SMD 805 Johanson Dielectrics 100r15x106kv4e

R1,R2 30W, 200OHM Innovative Power Products-IPP IPP-RB201-200R3,R4 RES 22ohm 2W 1% 2512 SMD Stackpole Electronics Inc RHC2512FT22R0

R5 RES 10K OHM 1/4W 5% 1206 SMD Rohm Semiconductor MCR18EZPJ103R7 RES 110 1/2W 5% CARBON FILM Stackpole Electronics Inc CF12JT1110

R8,R9,R14 10K 1/4W 0805 SMD Rohm Semiconductor MCR10EZHJ103R10 56K 1/4W 0805 SMD Rohm Semiconductor MCR10EZPJ563R11 4.7K 1/4W 0805 SMD Rohm Semiconductor MCR10EZPF4701R12 RES 30 OHM 1W 5% METAL OXIDE Xicon 281-30-RCR15 RES 10 OHM 1W 5% METAL OXIDE Xicon 281-10-RCRT1 1000 OHM TEMP SENSOR AXIAL NXP Semiconductors KTY83/110,113

POT1 Trimmer Resistors - 10K OHM 0.25W SMD Murata Electronics North America PVG5A103C03R00L1,L2 0805 1kohms HiSpeed EMI Filter Beads,Chokes & Arrays Murata Electronics North America 81-BLM21BD102SH1D

L3 20turns 18AWG I.D 195mils www.electromechanicsonline.com MW280SPNRDWIRE 18 AWG Hook-up Wire UL Belden 83029 0061000

U1 IC REG LDO ADJ 50mA 8-MSOP Linear Technology LT3010EMS8E#PBFU2 IC OP AMP R-R I/O SOT23-5 National Semiconductor LM7321MF/NOPBT1 Semi-ridge Coax ,1.8 inch, 50ohm MICROWAVE UT-34-M17

T2a,T2b Semi-ridge Coax ,1.8 inch, 25ohm MICROWAVE UT-34-25T3a,T3b Semi-ridge Coax ,2.5 inch, 10ohm MICROWAVE UT-70-10

T4 Semi-ridge Coax , 2.8 inch, 50ohm MICROWAVE UT-85-50F1,F2,F3 950uF BINOCULAR FERRITE Ceramic Magnetic, Inc 003212-02F4,F5,F6 125uF BINOCULAR FERRITE Ferronic 12-365-K

F7 Material 4B1 250ui,EMI Supressor Ferroxcube MHB2-14/8.5/14-4B1J1,J2 PE4000-SF SMA Female; 4 Hole Panel Mount Pasternack PE4000-SFPCB material RO4350B 60mils(1.524mm) 2oz/2oz (70um/70um) Rogers. Corp RO4350BQ1 LDMOS Polyfet RF Devices LR2401

C1,C2,C3,C12,C14,C15, C18,C21

10,000pF +/-10% RF By-Pass Capacitors,1111X Passive Plus, Inc 111X103KW500