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TB-160 LR401 P in v s Pou t F req=250MHz Vds=28Vdc I dq=800ma
0
2 0
4 0
6 0
8 0
1 0 0
0 1 2 3 4 5 6P i n i n W a t t s
11.0
11 .5
12 .0
12 .5
13 .0
13 .5
14 .0
14 .5
15 .0
E f f i c i e n c y @ 6 0 W = 4 0 %
Pout
Gain
P1dB=60W
TB-160 LR401 P in v s Pou t F req=512MHz Vds=28Vdc I dq=800ma
0
2 0
4 0
6 0
8 0
1 0 0
0 1 2 3 4 5 6
P i n i n W a t t s
11.0
11 .5
12 .0
12 .5
13 .0
13 .5
14 .0
14 .5
15 .0
E f f i c i e n c y @ 6 0 W = 4 5 %
Pout
Gain
P1dB=60W
TB-160 LR401 P in v s Pou t F req=30MHz Vds=28Vdc I dq=800ma
0
2 0
4 0
6 0
8 0
0 1 2 3 4 5 6
P i n i n W a t t s
11.0
12 .0
13 .0
14 .0
15 .0
16 .0
E f f i c i e n c y @ 6 0 W = 5 0 %
Pout
Gain
P1dB=60W
Dem
onst
ratio
n A
mpl
ifier
0
RF
in
C1
75
0p
FT
1
UT
34
-50
2.5
in.
C2
47
0p
F
C3 47
0p
F
13K
ohm
s
T2
UT
34
-17
3in
.
Bin
ocul
ar
LR
40
1
R8
18 o
hms
C4
1
0n
F
R9
18 o
hms
C5
10
nF
T3
21
oh
m T
eflo
nC
oa
x2
.6in
C6
22
pF
C7
1
nF
C8
1
nF
T4
UT
85
-50
3in
. C
9
1n
F
RF
ou
t
22
oh
m2
W
18
AW
G1
4 t
urn
s
C1
0 47
pF
C11
1n
F
18
AW
G1
2 t
urn
s
85
0m
u t
orr
oid
C1
21
0n
FC
13
63
V,4
7u
F
R11
10K
ohm
s
+28V
DC
R1
2
3.9
K o
hms
10
K o
hmpo
t
7.5
V z
en
er
C1
41
0n
F
R14
20
W
C1
51
0n
F
R16
20W
C17
1.8p
F
1.3p
F
C1
82p
F
TB-1
60 3
0-51
2Mhz
60W
40%
eff.
11 o
hms
ea.
100
ohm
s
100
ohm
s
C1
6
J C
itrol
o10
/22/
01
E C
unni
ngha
m8/
15/0
2
LR40
1 V
ds=2
8Vdc
Idq=
0.8A
125m
u fe
rrite
125m
u fe
rrite
125m
u fe
rrite
125m
u fe
rrite
Bin
ocul
ar
Bin
ocul
arB
inoc
ular
J C
itrol
o10
/22/
01
J C
itrol
o10
/22/
01
11 o
hms
ea.