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  Non-local spin transfer torque

  A charge current owing to ground from a magnetic contact on the left (input

nano-magnet) , gives rise to a spin current to the right, outside the path of

charge current. This “non-local spin current has !een shown to !e capa!le of

ipping the magneti"ation of a second magnet (output) on the right hand side.

#$% !ased s&napse

 The position of #omain wall in a strip can !e programmed !& current pulses.

't is !een nown that #$ motion can !e controlled !& var&ing !oth amplitude

and duration of current pulses. The #$ strip acts as a where its programma!le

spin inection strength is used for implementing spin-mode weighting operation.

A multi-input !ased *ateral spin valve structure is alread& e+plored in all spin

logic proposal.The conducting channel that transmits information from the input to the output magnet can be viewed

as an ‘interconnect’, and in principle could be a metal or a semiconductor. Generally Semiconductors

exhibit longer spin coherence lengths [references from asl.

imulation and modelling of spin modules

 The domain wall magnet could !e !roen into two di/erent domains of

oppositel& magnetised Nano magnet. The interface !etween the magnet and the

channel can pla& quite an important role in contri!uting to the spin polari"ation

of the inected electrons alleviating the resistivit& mismatch (see discussions in

!etween the magnet and the channel.

 The #omain wall strip proposed here has constrictions at desired positons.

 These constrictions act as local pinning sites which prevent motion of #omain

wall due to thermal uctuation.

 The results of short_pulse dynamics reveal that an initiall& pinned domain wallcan !e eventuall& e+pelled far awa& from the constriction !ut if the ma+imumdisplacement does not surpass a given threshold the domain-wall e+periences anattractive force which pushes it again toward the initial pinning site

 The spin circuit approach !& supri&o dutta et al. The spin transport model 0alet

1 2ert is coupled with magneti"ation d&namics of the device descri!ed !&

*andau3*ifshit"34il!ert (**4) equation.

 The spin-di/usion formulation &ields four-component conductance matricesGinterface  , and Gchannel  for the elements of Nano magnets, magnet3channel

interface, and the nonmagnetic channel, respectivel&. The four components arethe charge and the three spin components. The conductance matrices relate

four-component voltage drop and current ow !etween di/erent circuit nodes

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 The 2% 3N% interface

 

%agnetic %aterial parameters.

 't is nown that with the help of soft magnetic material such ,

5o6t5r ,ver& high 6erpendicular %agnetic Anisotropies (6%A)

can !e achieved . these material can have more narrower

domain wall . !ut the high magneti"ation gradients suggest

that the non-adia!atic parameter  β  .

%aterials with high 6%A show current driven domain wall

depinning at ver& low current densities of the order of 7.8 A9

um2

  .

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parameter value:+change :nerg& 5onstant 8   10

−12

 ;9m

 Alpha 3damping parameter

 

7.7readth9thicness)

 

1 μm X  80 nm X 4 nm  

Non-adia!atic 6arameter 7.77