Surface mount LED (TOP LED) - ebisudenshi.co.jpebisudenshi.co.jp/PDF/epitex_3.pdf · 2011-09-16 ·...

Surface mount LED (TOP LED)

flat typeSurface mount LED SMC395

SMD SMC405SMC430SMC470SMC490SMC505SMC525SMC565SMC570SMC630SMC660SMC680SMC700SMC720SMC735SMC750SMC770SMC810SMC830SMC850SMC870SMC880SMC890SMC940SMC970SMC1050SMC1200SMC1300SMC1450SMC1550SMT375RSMT405SMT415RSMT430SMT450SMT470SMT470-60SMT490SMT505SMTQ505SMT525SMT569SMT570

SMTQ590SMT610SMT625SMTQ625SMT630

SMT640SMT640CE-200SMT660SMT660NSMT670

Ceramic package

TOP LED

570nm

490nm505nm525nm565nm


630nm660nm680nm700nm720nm735nm750nm770nm810nm830nm850nm870nm880nm890nm940nm970nm1050nm1200nm1300nm1450nm1550nm375nm405nm415nm430nm450nm470nm

490nm505nm


610nm625nm

630nm

640nm

660nm

670nm

flat typeSurface mount LED SMT680

SMT690SMT700SMT720SMT735SMT750SMT760SMT780

SMT810SMT810NSMTQ810NSMT820SMT830N

SMT840SMT850N

SMTT850D-2*50SMTQ850SMT870NSMTQ870SMT880SMT880-2DSMT880-2D(B)SMT890SMT900SMT910SMT940SMT970SMT1050SMT1070SMT1200SMT1450SMT1550SMTW47SMTT2*625/2*780SMTT2*625/2*780-aSMTT2*625/2*780-dSMT660/890SMT660/910SMT660/940SMT700/940SMT735/850SMT735/890SMT830/940-ASMT830/940-CSMT850/940SMT430/505/568SMT568/635/760SMT-RGBSMT640/700/910SMT735/780/810SMT850/890/940

TOP LED


680nm690nm

760nm780nm805nm808nm810nm

820nm830nm

840nm850nm

870nm

880nm

890nm900nm910nm940nm970nm1050nm1070nm1200nm1450nm1550nmwhite

625nm, 780nm

735nm, 850nm735nm, 890nm

660nm, 890nm660nm, 910nm

568nm, 635nm, 760nm470nm, 525nm, 645nm640nm, 700nm, 910nm

830nm, 940nm

850nm, 940nm430nm, 505nm, 568nm

660nm, 940nm700nm, 940nm

66-3, Minamikawabe-Cho, Higashi-Kujyou, Minami-Ku, Kyoto, Japan Tel:++81-75-682-2338 Fax:++81-75-682-2267

850nm, 890nm, 940nm735nm, 780nm, 810nm

Copyright©2005 epitex.All.Reserved.

epitex Opto-Device & Custom LED SMD TYPE LED SMC395 Lead ( Pb ) Free Product – RoHS Compliant

SMC395 UV color SMD LED on ceramics

SMC395 consists of an InGaN LED mounted on the ceramics package and is sealed with silicone resin. It emits a spectral band of radiation at 395nm. ♦Outer dimension (Unit: mm)

♦Specifications

♦Absolute Maximum Ratings

Item Symbol Maximum Rated Value Unit Ambient TemperaturePower Dissipation PD 110 mW Ta=25°C Forward Current IF 30 mA Ta=25°C Reverse Voltage VR 5 V Ta=25°C Operating Temperature TOPR -20 ~ +80 °C Storage Temperature TSTG -30 ~ +80 °C Soldering Temperature TSOL 255 °C ‡Soldering condition: Soldering condition must be completed within 10 seconds at 255°C ♦Electro-Optical Characteristics [Ta=25°C]

Item Symbol Condition Minimum Typical Maximum Unit Forward Voltage VF IF=20mA 3.5 4.0 V Reverse Current IR VR=5V 10 uA Radiated Power PO IF=20mA 4 6 mW Radiant Intensity IＥ IF=20mA - mW/sr Peak Wavelength λP IF=20mA 385 395 405 nm Half Width ∆λ IF=20mA 15 nm Viewing Half Angle θ 1/2 IF=20mA ±55 deg. ‡Radiated Power is measured by S3584-08. ‡Brightness is measured byTektronix J-16. ‡Radiated intensity is measured by Ando Optical Multi Meter AQ2140 & AQ2741

1) Product Name SMD type UV color LED 2) Type No. SMC395 3) Chip (1) Chip Material InGaN (2) Peak Wavelength 395nm typ. 4) Package (1) Lead Frame Die Ceramics (2) Lens Silicone resin

EPITEX INC.: 66-3 Minami-Kawabe Cho, Higashi-Kujyo, Minami-Ku, Kyoto, Japan Tel: ++81-75-682-2338 Fax: ++81-75-682-2267 e-mail: [email protected] http://www.epitex.com

epitex Opto-Device & Custom LED SMD TYPE LED SMC405

PRELIMINARY Lead (Pb) Free Product RoHS compliant

SMC405 UV color SMD LED on ceramics SMC405 consists of an InGaN LED mounted on the ceramics package and is sealed with silicone resin. It emits a spectral band of radiation at 405nm. ♦Outer dimension (Unit: mm)

♦Specifications


‡Soldering condition: Soldering condition must be completed within 3 seconds at 230°C ♦Electro-Optical Characteristics [Ta=25°C]

‡Brightness is measured byTektronix J-16. ‡Radiated Power is measured by Ando Optical Multi Meter AQ2140 & AQ2741

1) Product Name SMD type UV color LED 2) Type No. SMC405 3) Chip (1) Chip Material InGaN (2) Peak Wavelength 405nm typ. 4) Package (1) Lead Frame Die Ceramics (2) Lens Silicone resin

Item Symbol Maximum Rated Value Unit Ambient TemperaturePower Dissipation PD 120 mW Ta=25°C Forward Current IF 30 mA Ta=25°C Reverse Voltage VR 5 V Ta=25°C Operating Temperature TOPR -20 ~ +80 °C Storage Temperature TSTG -30 ~ +80 °C Soldering Temperature TSOL 240 °C

Item Symbol Condition Minimum Typical Maximum Unit Forward Voltage VF IF=20mA 3.8 4.8 V Reverse Current IR VR=5V 10 uA Total Radiated Power PO IF=20mA 4 mW Brightness IV IF=20mA - mcd Peak Wavelength λP IF=20mA 395 405 415 nm Half Width ∆λ IF=20mA 15 nm Viewing Half Angle θ 1/2 IF=20mA ±55 deg.

EPITEX INC. : 4, Nishiaketa-Cho, Higashi-Kujyou, Minami-Ku, Kyoto, Japan Tel.: ++81-75-682-2338 Fax: ++81-75-682-2267 e-mail: [email protected] http://www.epitex.com


Lead (Pb) Free Product RoHS compliant

SMC525 High Bright Green color SMD LED on ceramics SMC525 consists of an InGaN LED mounted on the ceramics package

and is sealed with silicone or epoxy resin.

It emits a spectral band of radiation at 525nm. ◆Outer dimension (Unit：mm)

◆Specifications

1) Product Name SMD type blue color LED

2) Type No. SMC525

3) Chip

(1) Chip Material InGaN

(2) Peak Wavelength 525ｎｍｔｙｐ.

4) Package

(1) Package Ceramics

(2) Lens Silicone or Epoxy resin

◆Absolute Maximum Rating

Item Symbol Maximum Rated Value Unit Ambient Temperature

Power Dissipation PD 120 mW Ta=25℃

Forward Current IF 30 mA Ta=25℃ Reverse Voltage VR 5 V Ta=25℃ Operating Temperature TOPR -20 ～ +80 ℃

Storage Temperature TSTG -30 ～ +80 ℃

Soldering Temperature TSOL 240 ℃

‡Soldering condition : Solder condition must be completed within 3 seconds at 240℃

◆Electro-Optical Characteristics [ Ta=25℃ ]

Item Symbol Condition Minimum Typical Maximum Unit

Forward Voltage VF IF=20mA 3.5 4.3 V

Reverse Current IR VR=5V 10 uＡ

Total Radiated Power PO IF=20mA 1.0 mW

Brightness IV IF=20mA 150 mcd

Radiant Intensity IE ＩF=20mA 0.3 mW/sr

Peak Wavelength λP IF=20mA 515 525 535 nm

Half Width ⊿λ IF=20mA 40 nm

Viewing Half Angle ⊿Θ IF=20mA ±55 deg.

‡Total Radiated Power is measured by Photodyne #500

‡Radiant Intensity is measured by Tektronix J-6512.

‡Brightness is measured by Tektronix J-16.

EPITEX INC.: 4, Nishiaketa-cho, Higashi-Kujyo, Minami-Ku, Kyoto, Japan Tel: ++81-75-682-2338 Fax: ++81-75-682-2267 e-mail: [email protected] http://www.epitex.com


Lead ( Pb ) Free Product – RoHS Compliant

SMC630 High Bright Red color SMD LED on ceramics SMC630 consists of an AlInGaP/GaP LED mounted on the ceramics package and is sealed with silicone or epoxy resin. It emits a spectral band of radiation at 630nm.

♦Outer dimension (Unit : mm) ♦Specifications

1) Product Name SMD type red color LED 2) Type No. SMC630 3) Chip (1) Chip Material AlInGaP/GaP (2) Peak Wavelength 630nm typ. 4) Package (1) Package Ceramics (2) Lens Silicone or Epoxy resin

♦Absolute Maximum Ratings Item Symbol Maximum Rated Value Unit Ambient Temperature

Power Dissipation PD 120 mW Ta=25°C Forward Current IF 50 mA Ta=25°C Reverse Voltage VR 5 V Ta=25°C Operating Temperature TOPR -20 ~ +80 °C Storage Temperature TSTG -30 ~ +80 °C Soldering Temperature TSOL 240 °C ‡Soldering condition: Soldering condition must be completed within 3 seconds at 240°C ♦Electro-Optical Characteristics [Ta=25°C]

Item Symbol Condition Minimum Typical Maximum Unit Forward Voltage VF IF=20mA 2.05 2.30 V Reverse Current IR VR=5V 10 uA Total Radiated Power PO IF=20mA 5.0 mW Brightness IV IF=20mA 420 mcd Peak Wavelength λP IF=20mA 620 630 640 nm Half Width ∆λ IF=20mA 15 nm Viewing Half Angle θ 1/2 IF=20mA ±55 deg. ‡Total Radiated Power is measured by Photodyne #500 ‡Brightness is measured by Tektronix J-16.

EPITEX INC. : 66-3, Minamikawabe-Cho, Higashi-Kujyo, Minami-Ku, Kyoto, Japan Tel.: ++81-75-682-2338 Fax: ++81-75-682-2267 e-mail: [email protected] http://www.epitex.com



SMC660 High Bright Red color SMD LED on ceramics SMC660 consists of an AlGaAs LED mounted on the ceramics package and is sealed with silicone or epoxy resin. It emits a spectral band of radiation at 660nm.




1) Product Name SMD type red color LED 2) Type No. SMC660 3) Chip (1) Chip Material AlGaAs (2) Peak Wavelength 660nm typ. 4) Package (1) Package Ceramics (2) Lens Silicone or Epoxy resin


Item Symbol Condition Minimum Typical Maximum Unit Forward Voltage VF IF=20mA 1.90 2.30 V Reverse Current IR VR=5V 10 uA Total Radiated Power PO IF=20mA 2.5 mW Brightness IV IF=20mA 40 80 mcd Peak Wavelength λP IF=20mA 650 660 670 nm Half Width ∆λ IF=20mA 20 nm Viewing Half Angle θ 1/2 IF=20mA ±55 deg.

‡Total Radiated Power is measured by Photodyne #500 ‡Brightness is measured by Tektronix J-16.




SMC680 High Performance infrared SMD LED on ceramics SMC680 consists of an AlGaAs LED mounted on the ceramics package and is sealed with silicone or epoxy resin. It emits a spectral band of radiation at 680nm.



‡Pulse Forward Current condition: Duty=1% and Pulse Width=10us. ‡Soldering condition: Soldering condition must be completed within 3 seconds at 240°C ♦Electro-Optical Characteristics [Ta=25°C]

1) Product Name SMD type infrared LED 2) Type No. SMC680 3) Chip (1) Chip Material AlGaAs (2) Peak Wavelength 680nm typ. 4) Package (1) Package Ceramics (2) Lens Silicone or Epoxy resin

Item Symbol Maximum Rated Value Unit Ambient TemperaturePower Dissipation PD 110 mW Ta=25°C Forward Current IF 50 mA Ta=25°C Pulse Forward Current IFP 200 mA Ta=25°C Reverse Voltage VR 5 V Ta=25°C Operating Temperature TOPR -20 ~ +80 °C Storage Temperature TSTG -30 ~ +80 °C Soldering Temperature TSOL 240 °C

Item Symbol Condition Minimum Typical Maximum Unit Forward Voltage VF IF=20mA 1.90 2.30 V Reverse Current IR VR=5V 10 uA Total Radiated Power PO IF=20mA 1.5 3.0 mW Radiant Intensity IE IF=20mA 1.0 2.0 mW/sr Peak Wavelength λP IF=20mA 680 nm Half Width ∆λ IF=20mA 20 nm Viewing Half Angle θ 1/2 IF=20mA ±55 deg. Rise Time tr IF=20mA 80 ns Fall Time tf IF=20mA 80 ns

‡Total Radiated Power is measured by Photodyne #500 ‡Radiant Intensity is measured by Tektronix J-6512.





♦Outer dimension (Unit: mm) ♦Specifications






Item Symbol Condition Minimum Typical Maximum Unit Forward Voltage VF IF=50mA 1.75 1.95 V Reverse Current IR VR=5V 10 uA Total Radiated Power PO IF=50mA 5.0 10.0 mW Radiant Intensity IE IF=50mA 2.0 5.0 mW/sr Peak Wavelength λP IF=50mA 755 770 785 nm Half Width ∆λ IF=50mA 30 nm Viewing Half Angle θ 1/2 IF=50mA ±55 deg. Rise Time tr IF=50mA 80 ns Fall Time tf IF=50mA 80 ns




SMC850 (SMC850N) High Performance infrared SMD LED on ceramics SMC850 consists of an AlGaAs LED mounted on the ceramics package and is 38mW typical of output power. It emits a spectral band of radiation at 850nm and is sealed with silicone or epoxy resin.

♦Specifications ♦Outer dimension（Unit: mm）

♦Absolute Maximum Rating

Item Symbol Maximum Rated Value Unit Ambient Temperature Power Dissipation PD 160 mW Ta=25°C Forward Current IF 100 mA Ta=25°C Pulse Forward Current IFP 1,000 mA Ta=25°C Reverse Voltage VR 5 V Ta=25°C Junction Temperature TJ 100 °C Thermal Resistance Rthja 190 K/W Operating Temperature TOPR -20 ~ +80 °C Storage Temperature TSTG -30 ~ +80 °C Soldering Temperature TSOL 255 °C ‡Pulse Forward Current condition: Duty=1% and Pulse Width=10us. ‡Soldering condition: Soldering condition must be completed within 10 seconds at 255°C ♦Electro-Optical Characteristics [Ta=25°C]

Item Symbol Condition Minimum Typical Maximum UnitIF=50mA DC 1.45 1.60 Forward Voltage VF

IF=100mA, tp=20ms 1.50 1.8 V

Reverse Current IR VR=5V 10 uA IF=50mA DC 15.0 19.0 Total Radiated Power PO

IF=100mA, tp=20ms 38.0 mW

IF=50mA DC 10 Radiant Intensity IE IF=100mA, tp=20ms 20

mW/sr

Peak Wavelength λP IF=50mA DC 850 nm Half Width ∆λ IF=50mA DC 40 nm Viewing Half Angle θ 1/2 IF=50mA DC ±55 deg.Rise Time tr IF=50mA DC 15 ns Fall Time tf IF=50mA DC 10 ns ‡Total Radiated Power is measured by Photodyne #500 ‡Radiant Intensity is measured by Tektronix J-6512.

1) Product Name Ceramics SMD IRED 2) Type No. SMC850 3) Chip (1) Chip Material AlGaAs (2) Chip Dimension 0.4mm*0.4mm (3) Peak Wavelength 850nm typ. 4) Package (1) Package Ceramics (2) Lens Silicone or Epoxy resin



SMC870 (SMC870N) High Performance infrared SMD LED on ceramics SMC870 consists of an AlGaAs LED mounted on the ceramics package and is 38mW typical of output power. It emits a spectral band of radiation at 870nm and is sealed with silicone or epoxy resin.



Item Symbol Maximum Rated Value Unit Ambient Temperature Power Dissipation PD 160 mW Ta=25°C Forward Current IF 100 mA Ta=25°C Pulse Forward Current IFP 1,000 mA Ta=25°C Reverse Voltage VR 5 V Ta=25°C Junction Temperature TJ 100 °C Thermal Resistance Rthja 190 K/W Operating Temperature TOPR -20 ~ +80 °C Storage Temperature TSTG -30 ~ +80 °C Soldering Temperature TSOL 255 °C ‡Pulse Forward Current condition: Duty=1% and Pulse Width=10us. ‡Soldering condition: Soldering condition must be completed within 10 seconds at 255°C ♦Electro-Optical Characteristics [Ta=25°C]


IF=100mA, tp=20ms 1.50 1.8 V




mW/sr

Peak Wavelength λP IF=50mA DC 860 870 880 nm Half Width ∆λ IF=50mA DC 40 nm Viewing Half Angle θ 1/2 IF=50mA DC ±55 deg.Rise Time tr IF=50mA DC 15 ns Fall Time tf IF=50mA DC 10 ns ‡Total Radiated Power is measured by Photodyne #500 ‡Radiant Intensity is measured by Tektronix J-6512.

1) Product Name Ceramics SMD IRED 2) Type No. SMC870 3) Chip (1) Chip Material AlGaAs (2) Chip Dimension 0.4mm*0.4mm (3) Peak Wavelength 870nm typ. 4) Package (1) Package Ceramics (2) Lens Silicone or Epoxy resin



SMC880 High Performance infrared SMD LED on ceramics

SMC880 consists of an AlGaAs LED mounted on the ceramics package and is sealed with silicone or epoxy resin. and is 40mW typical of output power. It emits a spectral band of radiation at 885nm.


♦Absolute Maximum Rating Item Symbol Maximum Rated Value Unit Ambient Temperature

Power Dissipation PD 160 mW Ta=25°C Forward Current IF 100 mA Ta=25°C Pulse Forward Current IFP 1,000 mA Ta=25°C Reverse Voltage VR 5 V Ta=25°C Operating Temperature TOPR -20 ~ +80 °C Storage Temperature TSTG -30 ~ +80 °C Soldering Temperature TSOL 255 °C ‡Pulse Forward Current condition: Duty=1% and Pulse Width=10us. ‡Soldering condition: Soldering condition must be completed within 10 seconds at 255°C ♦Electro-Optical Characteristics [Ta=25°C]


IF=100mA, tp=20ms 1.50 1.8 V



IF=50mA DC 8.0 11 Radiant Intensity IE IF=100mA, tp=20ms 22

mW/sr


1) Product Name SMD type infrared LED 2) Type No. SMC880 3) Chip (1) Chip Material AlGaAs(DDH) (2) Chip Dimension 0.4mm*0.4mm (3) Peak Wavelength 885nm typ. 4) Package (1) Package Ceramics (2) Lens Silicone or Epoxy resin








1) Product Name SMD type IR LED 2) Type No. SMC890 3) Chip (1) Chip Material AlGaAs (2) Peak Wavelength 880nm typ. 4) Package (1) Package Ceramics (2) Lens Silicone or Epoxy resin







SMC940 High Performance infrared SMD LED on ceramics SMC940 consists of a GaAs LED mounted on the ceramics package and is sealed with silicone or epoxy resin. It emits a spectral band of radiation at 940nm.





1) Product Name SMD type IR LED 2) Type No. SMC940 3) Chip (1) Chip Material GaAs (2) Peak Wavelength 940nm typ. 4) Package (1) Package Ceramics (2) Lens Silicone or Epoxy resin


Item Symbol Condition Minimum Typical Maximum Unit Forward Voltage VF IF=50mA 1.30 1.45 V Reverse Current IR VR=5V 10 uA Total Radiated Power PO IF=50mA 5.0 10.0 mW Radiant Intensity IE IF=50mA 4.0 mW/sr Peak Wavelength λP IF=50mA 930 940 950 nm Half Width ∆λ IF=50mA 50 nm Viewing Half Angle θ 1/2 IF=50mA ±55 deg. Rise Time tr IF=50mA 1000 ns Fall Time tf IF=50mA 500 ns




SMC970 consists of a GaAs LED mounted on the ceramics package and is sealed with silicone or epoxy resin. It emits a spectral band of radiation at 970nm.

� Outer dimension (Unit: mm) Specifications

Absolute Maximum Ratings

‡Pulse Forward Current condition: Duty=1% and Pulse Width=10us. ‡Soldering condition: Soldering condition must be completed within 3 seconds at 240°C Electro-Optical Characteristics [Ta=25°C]



1) Product Name SMD type red color LED 2) Type No. SMC970 3) Chip (1) Chip Material GaAs (2) Peak Wavelength 970nm typ. 4) Package (1) Package Ceramics (2) Lens Silicone or Epoxy resin


Power Dissipation PD 140 mW Ta=25°C Forward Current IF 100 mA Ta=25°C Pulse Forward Current IFP 500 mA Ta=25°C Reverse Voltage VR 5 V Ta=25°C Operating Temperature TOPR -20 ~ +80 °C Storage Temperature TSTG -30 ~ +80 °C Soldering Temperature TSOL 240 °C



Reverse Current IR VR=5V 10 uA

Total Radiated Power PO IF=50mA 2.0 4.0 mW

Radiant Intensity IE IF=50mA 1.5 mW/sr

Peak Wavelength � P IF=50mA 960 970 980 nm

Half Width �� IF=50mA 50 nm

Viewing Half Angle �� IF=50mA ±55 deg.

Rise Time tr IF=50mA 1000 ns

Fall Time tf IF=50mA 500 ns

epitex Opto-Device & Custom LED SMD TYPE LED SMC1050 Lead (Pb) Free Product RoHS compliant


SMC1050 consists of an AlGaAs LED mounted on the ceramics package

and is sealed with silicone or epoxy resin.

It emits a spectral band of radiation at 1050nm. ◆Outer dimension (Unit：mm)

◆Specifications

1)Product Name SMD type infrared LED

2)Type No. SMC1050

3)Chip

(1)Chip Material GaAs

(2)Peak Wavelength 1050ｎｍｔｙｐ.

4)Package

(1)Package Ceramics

(2)Lens Silicone or Epoxy resin

◆Abosolute Maximum Rating


Power Dissipation PD 140 mW Ta=25℃

Forward Current IF 100 mA Ta=25℃

Pulse Forward Current IFP 500 mA Ta=25℃

Reverse Voltage VR 5 V Ta=25℃

Operating Temperature TOPR -20 ～ +85 ℃

Storage Temperature TSTG -30 ～ +100 ℃

Soldering Temperature TSOL 240 ℃

‡Pulse Foward Current condition : Duty=1% and Pulse Width=1us.

‡Soldering condition : Soldering condition must be completed within 3 seconds at 260℃

◆Electro-Optical Characteristics


Forward Voltage ＶＦＩF=50mA 1.30 1.45 V

Reverse Current IＲ VR=5V 10 uＡ

Total Radiated Power ＰO ＩF=50mA 0.5 mW

Radiant Intensity IE ＩF=50mA 0.2 mW/sr

Peak Wavelength λP ＩF=50mA 1000 1050 1100 nm

Half Width ⊿λ ＩF=50mA 70 nm

Viewing Half Angle ⊿Θ ＩF=50mA ±55 deg.

Rise Time tr ＩF=50mA ns

Fall Time tf ＩF=50mA ns



1.1±.15

1.5±0.2

2±0.2

2±0.23±0.2

0.5 0.5

Cathode

Plastic Coating

AnodeCathode

mark

EPITEX INC.: 4, Nishiaketa-cho, Higashi-Kujyo, Minami-Ku, Kyoto, Japan Tel: ++81-75-682-2338 Fax: ++81-75-682-2267 e-mail: [email protected] http://www.epitex.com



SMC1200 consists of an InGaAsP LED mounted on the ceramics package and is sealed with silicone or epoxy resin. It emits a spectral band of radiation at 1200nm. ♦Outer dimension（Unit:mm） ♦Specifications

1) Product Name SMD type infrared LED 2) Type No. SMC1200 3) Chip (1) Chip Material InGaAsP (2) Peak Wavelength 1200ｎｍｔｙｐ. 4) Package (1) Package Ceramics (2) Lens Silicone or Epoxy resin


Power Dissipation PD 120 mW Ta=25°C Forward Current IF 100 mA Ta=25°C Pulse Forward Current IFP 1 A Ta=25°C Reverse Voltage VR 5 V Ta=25°C Operating Temperature TOPR -20 ~ +85 °C Storage Temperature TSTG -30 ~ +100 °C Soldering Temperature TSOL 240 °C ‡Pulse Forward Current condition: Duty=1% and Pulse Width=1us. ‡Soldering condition: Soldering condition must be completed within 3 seconds at 240°C

♦Electro-Optical Characteristics Item Symbol Condition Minimum Typical Maximum Unit

Forward Voltage VF IF=20mA 0.8 1.3 V Reverse Current IR VR=5V 10 uＡ Total Radiated Power PO IF=20mA 0.2 mW Radiant Intensity IE IF=20mA mW/srPeak Wavelength λP IF=20mA 1150 1200 1250 nm Half Width ∆λ IF=20mA 100 nm Viewing Half Angle θ 1/2 IF=20mA ±55 deg. Rise Time tr IF=20mA 10 ns Fall Time tf ＩF=20mA 10 ns ‡Total Radiated Power is measured by Ando AQ2140/2742




SMC1550 consists of an InGaAsP LED mounted on the ceramics package and is sealed with silicone. It emits a spectral band of radiation at 1550nm. ♦Outer dimension（Unit:mm） ♦Specifications

1) Product Name SMD type infrared LED 2) Type No. SMC1550 3) Chip (1) Chip Material InGaAsP (2) Peak Wavelength 1550ｎｍｔｙｐ. 4) Package (1) Package Ceramics (2) Lens Silicone resin




Forward Voltage VF IF=50mA 1.2 1.5 V Reverse Current IR VR=5V 10 uＡ Total Radiated Power PO IF=50mA 1.0 mW Peak Wavelength λP IF=50mA 1500 1550 1600 nm Half Width ∆λ IF=50mA 100 nm Viewing Half Angle θ 1/2 IF=50mA ±55 deg. Rise Time tr IF=50mA 10 ns Fall Time tf ＩF=50mA 10 ns ‡Total Radiated Power is measured by Ando AQ2140/2742


epitex Opto-Device & Custom LED TOP LED SMT375R Lead ( Pb ) Free Product – RoHS Compliant

SMT375R UV TOP LED with UV resistant resin

SMT375R consists of an InGaN LED mounted on the lead frame as TOP LED package and is sealed with UV resistant resin. It emits a spectral band of radiation at 375nm and ♦Outer dimension (Unit: mm) is designed for long life under UV beam.

♦Specifications



Item Symbol Condition Minimum Typical Maximum Unit Forward Voltage VF IF=20mA 3.5 4.3 V Reverse Current IR VR=5V 10 uA Total Radiated Power PO IF=20mA 2.5 mW Radiant Intensity IE IF=20mA 2.0 mW/sr Brightness IV IF=20mA - mcd Peak Wavelength λP IF=20mA 370 375 380 nm Half Width ∆λ IF=20mA 15 nm Viewing Half Angle θ 1/2 IF=20mA ±45 deg.

‡Radiated Power is measured by S3584-08. ‡Radiant Intensity is measured by Epitex’s designed and AQ2140 & AQ2741

1) Product Name TOP LED 2) Type No. SMT375R 3) Chip (1) Chip Material InGaN (2) Peak Wavelength 375nm typ. 4) Package (1) Lead Frame Die Silver Plated (2) Package Resin PPA Resin (3) Lens UV resistant Resin


epitex Opto-Device & Custom LED TOP LED SMT375R ♦SMD Application

IR-Reflow Soldering Profile for lead free soldering Recommended Land Layout (Unit: mm)

Don’t put stress on SMD and a circuit board after soldering. ♦SMD Packing

Tape and Reel Dimensions (Unit: mm)

♦Wrapping Moisture barrier bag aluminum laminated film with a desiccant to keep out the moisture absorption during the transportation and storage.

300

250

200

150

100

50

0

Tem

pera

ture

[°C

]

3002001000Time [s]

200°C

150°C

60s 120s 40s 70s

MAX 10s

255°C


epitex Opto-Device & Custom LED SMD TYPE LED SMT415R Lead ( Pb ) Free Product – RoHS Compliant

SMT415R TOP LED with UV resistant resin

SMT415R consists of an InGaN LED mounted on the lead frame as TOP LED package and is sealed with UV resistant resin. It emits a spectral band of radiation at 415nm typ. ♦Specifications ♦Outer dimension (Unit: mm)



Item Symbol Condition Minimum Typical Maximum Unit Forward Voltage VF IF=20mA 3.4 4.0 V Reverse Current IR VR=5V 10 uA Total Radiated Power PO IF=20mA 8 12 mW Radiant Intensity IE IF=20mA 12 mW/sr Brightness IV IF=20mA - mcd Peak Wavelength λP IF=20mA 410 415 420 nm Half Width ∆λ IF=20mA 16 nm Viewing Half Angle θ 1/2 IF=20mA ±45 deg. ‡Radiated Power is measured by S3584-08. ‡Radiated intensity is measured by Ando Optical Multi Meter AQ2140 & AQ2741 ‡Brightness is measured byTektronix J-16.

1) Product Name TOP LED 2) Type No. SMT415R 3) Chip (1) Chip Material InGaN (2) Peak Wavelength 415nm typ. 4) Package (1) Lead Frame Die Silver Plated (2) Package Resin PPA Resin (3) Lens UV resistant Resin


epitex Opto-Device & Custom LED SMD TYPE LED SMT430


SMT430 Blue color TOP LED

SMT430 consists of an InGaN LED mounted on the lead frame as TOP LED package and is 30mcd typical of Brightness. It emits a spectral band of radiation at 430nm. ♦Outer dimension (Unit: mm)

♦Specifications




1) Product Name TOP LED 2) Type No. SMT430 3) Chip (1) Chip Material InGaN (2) Peak Wavelength 430nm typ. 4) Package (1) Lead Frame Die Silver Plated (2) Package Resin PPA Resin (3) Lens Epoxy Resin


Item Symbol Condition Minimum Typical Maximum Unit Forward Voltage VF IF=20mA 3.8 4.8 V Reverse Current IR VR=5V 10 uA Total Radiated Power PO IF=20mA 0.3 mW Brightness IV IF=20mA 30 mcd Peak Wavelength λP IF=20mA 420 430 440 nm Half Width ∆λ IF=20mA 50 nm Viewing Half Angle θ 1/2 IF=20mA ±55 deg.


epitex Opto-Device & Custom LED SMD TYPE LED SMT450 Lead ( Pb ) Free Product – RoHS Compliant

SMT450 High Performance Blue color TOP LED


♦Specifications


Item Symbol Maximum Rated Value Unit Ambient TemperaturePower Dissipation PD 190 mW Ta=25°C Forward Current IF 50 mA Ta=25°C Pulse Forward Current IFP 200 mA Ta=25°C Reverse Voltage VR 5 V Ta=25°C Operating Temperature TOPR -30 ~ +80 °C Storage Temperature TSTG -40 ~ +80 °C Soldering Temperature TSOL 255 °C ‡Pulse Forward Current condition: Duty=1% and Pulse Width=10us.


Item Symbol Condition Minimum Typical Maximum Unit Forward Voltage VF IF=20mA 3.3 4.0 V Reverse Current IR VR=5V 10 uA Radiated Power PO IF=20mA 16 mW Radiant Intensity IE IF=20mA 4 mW/sr Brightness IV IF=20mA 100 200 mcd Peak Wavelength λP IF=20mA 440 450 460 nm Half Width ∆λ IF=20mA 20 nm Viewing Half Angle θ 1/2 IF=20mA ±55 deg.

‡Radiated Power is measured by S3584-08. ‡Radiant Intensity is measured by Tektronix J-6512.

‡Brightness is measured by Tektronix J-16.



epitex Opto-Device & Custom LED TOP LED SMT450 ♦SMD Application





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SMD LED STORAGE AND HANDLING PRECAUTIONS

＜Storage Conditions before Opening a Moisture-Barrier Aluminum Bag＞・ Before opening a moisture-barrier aluminum bag, please store it at <30ºC, <60%RH. Please

note that the maximum shelf life is 12 months under these conditions. ＜Storage Conditions after Opening a Moisture-Barrier Aluminum Bag＞・ After opening a moisture-barrier aluminum bag, store the aluminum bag and silica gel in a

desiccator. ・After opening the bag, please solder the LEDs within 72 hours in a room with 5 - 30ºC, <50%RH. ・Please put any unused, remaining LEDs and silica gel back in the same aluminum bag and then

vacuum-seal the bag. ・It is recommended to keep the re-sealed bag in a desiccator at <30%RH. ＜Notes about Re-sealing a Moisture-Barrier Aluminum Bag＞・When vacuum-sealing an opened aluminum bag, if you find the moisture-indicator of the silica gel has changed to pink from blue (indicating a relative humidity of 30 % or more), please do not use the unused LEDs, the aluminum bag, or the silica gel. ＜Notes about Opening a Re-sealed Moisture-Barrier Aluminum Bag＞・When opening a vacuumed and re-sealed aluminum bag in order to use the remaining LEDs stored

in the bag, if you find that the moisture-indicator of the silica has changed to pink, please do not use the LEDs.

※The 72-hour- long floor life does not include the time while LEDs are stored in the moisture-barrier

aluminum bag. However, we strongly recommend to solder the LEDs as soon as possible after opening the aluminum bag.



SMT470 High Performance Blue color TOP LED


♦Specifications



Item Symbol Condition Minimum Typical Maximum Unit Forward Voltage VF IF=20mA 3.80 4.30 V Reverse Current IR VR=5V 10 uA Total Radiated Power PO IF=20mA 3.5 mW Brightness IV IF=20mA 100 200 mcd Peak Wavelength λP IF=20mA 460 470 480 nm Half Width ∆λ IF=20mA 25 nm Viewing Half Angle θ 1/2 IF=20mA ±55 deg. ‡Total Radiated Power is measured by Photodyne #500 ‡Brightness is measured by Tektronix J-16.





SMT490 High Bright Greenish Blue color TOP LED


♦Specifications



‡ Total Radiated Power is measured by Photodyne #500 ‡Brightness is measured by Tektronix J-16.



Item Symbol Condition Minimum Typical Maximum Unit Forward Voltage VF IF=20mA 3.50 4.30 V Reverse Current IR VR=5V 10 uA Total Radiated Power PO IF=20mA 1.0 mW Brightness IV IF=20mA 80 mcd Radiant Intensity IE ＩF=20mA 0.3 mW/sr Peak Wavelength λP IF=20mA 480 490 500 nm Half Width ∆λ IF=20mA 30 nm Viewing Half Angle θ 1/2 IF=20mA ±55 deg.


epitex Opto-Device & Custom LED TOP LED SMT505 Lead ( Pb ) Free Product – RoHS Compliant

SMT505 High Performance Cyan color TOP LED


♦Specifications


Item Symbol Maximum Rated Value Unit Ambient TemperaturePower Dissipation PD 185 mW Ta=25°C Forward Current IF 50 mA Ta=25°C Reverse Voltage VR 5 V Ta=25°C Operating Temperature TOPR -20 ~ +80 °C Storage Temperature TSTG -30 ~ +80 °C Soldering Temperature TSOL 255 °C ‡Soldering condition: Soldering condition must be completed within 10seconds at 255°C ♦Electro-Optical Characteristics [Ta=25°C]

Item Symbol Condition Minimum Typical Maximum Unit Forward Voltage VF IF=20mA 3.3 4.0 V Reverse Current IR VR=5V 10 uA Total Radiated Power PO IF=20mA 10.0 mW Brightness IV IF=20mA 130 mcd Radiant Intensity IE ＩF=20mA 0.5 mW/sr Peak Wavelength λP IF=20mA 495 505 515 nm Half Width ∆λ IF=20mA 30 nm Viewing Half Angle θ 1/2 IF=20mA ±55 deg. ‡ Total Radiated Power is measured by Photodyne #500 ‡Brightness is measured by Tektronix J-16.








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255°C




SMT525 High Performance Green color TOP LED


♦Specifications










SMT569 High Performance Yellow Green color TOP LED

SMT569 consists of an AlGaInP LED mounted on the lead frame as TOP LED package and is 60mcd typical of Brightness. It emits a spectral band of radiation at 570nm. ♦Outer dimension (Unit: mm)

♦Specifications




1) Product Name TOP LED 2) Type No. SMT569 3) Chip (1) Chip Material AlGaInP (2) Peak Wavelength 570nm typ. 4) Package (1) Lead Frame Die Silver Plated (2) Package Resin PPA Resin (3) Lens Epoxy Resin






SMT570 High Performance Yellow Green color TOP LED


♦Specifications










SMT610 High Performance Orange color TOP LED


♦Specifications









SMT625 High Performance Red color TOP LED SMT625 consists of an AlGaInP LED mounted on the lead frame as TOP LED package and is 800mcd typical of Brightness. It emits a spectral band of radiation at 625nm. ♦Outer dimension (Unit: mm) ♦Specifications


Power Dissipation PD 175 mW Ta=25°C Forward Current IF 75 mA Ta=25°C Reverse Voltage VR 5 V Ta=25°C Operating Temperature TOPR -30 ~ +80 °C Storage Temperature TSTG -40 ~ +80 °C Soldering Temperature TSOL 255 °C


Item Symbol Condition Minimum Typical Maximum Unit IF=20mA 2.0 2.3 Forward Voltage VF IF=50mA 2.2 2.5

V

Reverse Current IR VR=5V 10 uA IF=20mA 3.0 6.0 Total Radiated Power PO IF=50mA 7.5 13.5

mW

IF=20mA 800 Brightness IV IF=50mA 1600

mcd

IF=20mA 2.5 Radiant Intensity IE IF=50mA 6.0

mW/sr

λP 622 627 632 Peak Wavelength λＤ

IF=50mA 615 618 620

nm

Half Width ∆λ IF=20mA 25 nm Viewing Half Angle θ 1/2 IF=20mA ±55 deg. ‡Total Radiated Power is measured by Photodyne #500 ‡Radiant Intensity is measured by Tektronix J-6512.

1) Product Name TOP LED 2) Type No. SMT625 3) Chip (1) Chip Material AlGaInP (2) Peak Wavelength 625nm typ. 4) Package (1) Lead Frame Die Silver Plated (2) Package Resin PPA Resin (3) Lens Epoxy







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SMT630 High Performance Red color TOP LED


♦Specifications









SMT640 High Performance Red color TOP LED SMT640 consists of an AlGaInP LED mounted on the lead frame as TOP LED package and is 800mcd typical of Brightness. It emits a spectral band of radiation at 640nm. ♦Outer dimension (Unit: mm) ♦Specifications





V

Reverse Current IR VR=5V 10 uA IF=20mA 3.0 6.0 Total Radiated Power PO IF=50mA 7.5 13.5

mW

IF=20mA 800 Brightness IV IF=50mA 1600

mcd


mW/sr

λP 630 640 650 Peak Wavelength λＤ

IF=50mA 628

nm

Half Width ∆λ IF=20mA 25 nm Viewing Half Angle θ 1/2 IF=20mA ±55 deg. ‡Total Radiated Power is measured by Photodyne #500 ‡Radiant Intensity is measured by Tektronix J-6512.

1) Product Name TOP LED 2) Type No. SMT640 3) Chip (1) Chip Material AlGaInP (2) Peak Wavelength 640nm typ. 4) Package (1) Lead Frame Die Silver Plated (2) Package Resin PPA Resin (3) Lens Epoxy







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255°C


epitex Opto-Device & Custom LED SMD TYPE LED SMT640CE-200

SMT640CE-200 point source LED

SMT640CE-200 consists of red color point source LED mounted on the lead frame as TOP LED package and is 150mcd typical of Brightness. It emits a spectral band of radiation at 640nm. Outer dimension (Unit: mm)

Specifications

Absolute Maximum Ratings

‡Soldering condition: Soldering condition must be completed within 3 seconds at 230°C Electro-Optical Characteristics [Ta=25°C]



1) Product Name Point Source LED 2) Type No. SMT640CE-200 3) Chip (1) Chip Material AlGaInP (2) Peak Wavelength 640nm typ. (3) Emission Area f200um 4) Package (1) Lead Frame Die Silver Plated (2) Package Resin PPA Resin (3) Lens Epoxy Resin





Reverse Current IR VR=5V 10 uA

Total Radiated Power PO IF=20mA 2.0 mW

Brightness IV IF=20mA 80 150 mcd

Radiant Intensity IE IF=50mA 1 mW/sr

Peak Wavelength lP IF=20mA 630 640 650 nm

Half Width Dl IF=20mA 13 nm

Viewing Half Angle Q1/2 IF=20mA ±30 deg.




SMT660 consists of an AlGaAs LED mounted on the lead frame as TOP LED package and is 110mcd typical of Brightness. It emits a spectral band of radiation at 650nm. ♦Outer dimension (Unit: mm)

♦Specifications




1) Product Name TOP LED 2) Type No. SMT660 3) Chip (1) Chip Material AlGaAs (2) Peak Wavelength 650nm typ. 4) Package (1) Lead Frame Die Silver Plated (2) Package Resin PPA Resin (3) Lens Epoxy Resin


Item Symbol Condition Minimum Typical Maximum Unit Forward Voltage VF IF=20mA 1.90 2.30 V Reverse Current IR VR=5V 10 uA Total Radiated Power PO IF=20mA 2.2 3.5 mW Brightness IV IF=20mA 50 110 mcd Peak Wavelength λP IF=20mA 640 650 660 nm Half Width ∆λ IF=20mA 20 nm Viewing Half Angle θ 1/2 IF=20mA ±55 deg.


epitex Opto-Device & Custom LED Red Color TOP LED SMT660N Lead ( Pb ) Free Product – RoHS Compliant

SMT660N High Performance Red Color TOP LED SMT660N consists of an AlGaInP LED mounted on the lead frame as TOP LED package and is 31mW typical of output power and 750mcd of Brightness. It emits a spectral band of radiation at 660nm. ♦Outer dimension (Unit: mm) ♦Specifications


Power Dissipation PD 120 mW Ta=25°C Forward Current IF 50 mA Ta=25°C Reverse Voltage VR 5 V Ta=25°C Operating Temperature TOPR -20 ~ +80 °C Storage Temperature TSTG -30 ~ +80 °C Soldering Temperature TSOL 255 °C ‡Pulse Forward Current condition: Duty=1% and Pulse Width=10us. ‡Soldering condition: Soldering condition must be completed within 10 seconds at 255°C ♦Electro-Optical Characteristics [Ta=25°C]


V

IF=20mA 9.0 12.0 Total Radiated Power PO IF=50mA 31.0

mW


mW/sr

IF=20mA 300 Brightness Iv IF=50mA 750

mcd

Peak Wavelength λP IF=50mA 650 660 660 nm Half Width ∆λ IF=50mA 16 nm Viewing Half Angle θ 1/2 IF=50mA ±63 deg. ‡Total Radiated Power is measured by Photodyne #500 ‡Radiant Intensity is measured by Tektronix J-6512.

1) Product Name TOP IR LED 2) Type No. SMT660N 3) Chip (1) Chip Material AlGaInP (2) Chip Dimension 0.35mm*0.35mm (3) Peak Wavelength 660nm typ. 4) Package (1) Lead Frame Die Silver Plated (2) Package Resin PPA Resin (3) Lens Epoxy Resin


epitex Opto-Device & Custom LED Red Color TOP LED SMT660N ♦SMD Application

IR-Reflow Soldering Profile for lead free soldering recommended Land Layout (Unit: mm)




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255°C





SMT670 consists of an AlGaAs LED mounted on the lead frame as TOP LED package and is 6mW of total radiated power. It emits a spectral band of radiation at 670nm. ♦Outer dimension (Unit: mm)

♦Specifications




1) Product Name TOP LED 2) Type No. SMT670 3) Chip (1) Chip Material AlGaAs (2) Peak Wavelength 670nm typ. 4) Package (1) Lead Frame Die Silver Plated (2) Package Resin PPA Resin (3) Lens Epoxy Resin


Item Symbol Condition Minimum Typical Maximum Unit Forward Voltage VF IF=20mA 1.80 2.30 V Reverse Current IR VR=5V 10 uA Total Radiated Power PO IF=20mA 6 mW Radiant Intensity IE IF=50mA 3 mW/sr Peak Wavelength λP IF=20mA 660 670 680 nm Half Width ∆λ IF=20mA 20 nm Viewing Half Angle θ 1/2 IF=20mA ±55 deg.


epitex Opto-Device & Custom LED TOP IR LED SMT680 PRELIMINARY Lead (Pb) Free Product RoHS compliant

SMT680 High Performance Infrared TOP IR LED

SMT680 consists of an AlGaAs LED mounted on the lead frame as TOP LED package and is sealed with epoxy resin. It emits a spectral band of radiation at 680nm. ♦Outer dimension（Unit:mm） ♦Specifications

1) Product Name TOP IR LED 2) Type No. SMT680 3) Chip (1) Chip Material AlGaAs (2) Peak Wavelength 680ｎｍｔｙｐ. 4) Package (1) Lead Frame Die Silver Plated (2) Package Resin PPA Resin (3) Lens Epoxy Resin



Item Symbol Condition Minimum Typical Maximum Unit Forward Voltage VF IF=50mA 1.90 2.30 V Reverse Current IR VR=5V 10 uA Total Radiated Power PO IF=50mA 1.5 3.0 mW Radiant Intensity IE IF=50mA 1.0 2.0 mW/sr Peak Wavelength λP IF=50mA 680 nm Half Width ∆λ IF=50mA 20 nm Viewing Half Angle θ 1/2 IF=50mA ±55 deg. Rise Time tr ＩF=50mA 80 ns Fall Time tf ＩF=50mA 80 ns ‡Total Radiated Power is measured by Photodyne #500 ‡Radiant Intensity is measured by Tektronix J-6512.



epitex Opto-Device & Custom LED TOP IR LED SMT690 Lead ( Pb ) Free Product – RoHS Compliant

SMT690 High Performance Infrared TOP IR LED SMT690 consists of an AlGaAs LED mounted on the lead frame as TOP LED package and is sealed with epoxy resin. It emits a spectral band of radiation at 690nm. ♦Outer dimension（Unit:mm） ♦Specifications

1) Product Name TOP IR LED 2) Type No. SMT690 3) Chip (1) Chip Material AlGaAs (2) Peak Wavelength 690nm typ. 4) Package (1) Lead Frame Die Silver Plated (2) Package Resin PPA Resin (3) Lens Epoxy Resin


Item Symbol Maximum Rated Value Unit Ambient TemperaturePower Dissipation PD 100 mW Ta=25°C Forward Current IF 50 mA Ta=25°C Pulse Forward Current IFP 200 mA Ta=25°C Reverse Voltage VR 5 V Ta=25°C Operating Temperature TOPR -40 ~ +80 °C Storage Temperature TSTG -40 ~ +80 °C Soldering Temperature TSOL 255 °C ‡Pulse Forward Current condition: Duty=1% and Pulse Width=10us. ‡Soldering condition: Soldering condition must be completed within 10seconds at 255°C ♦Electro-Optical Characteristics [Ta=25°C]

Item Symbol Condition Minimum Typical Maximum Unit Forward Voltage VF IF=50mA 1.90 2.30 V Reverse Current IR VR=5V 10 uA Total Radiated Power PO IF=50mA 5.0 8.0 mW Radiant Intensity IE IF=50mA 6.0 mW/sr Peak Wavelength λP IF=50mA 680 690 700 nm Half Width ∆λ IF=50mA 20 nm Viewing Half Angle θ 1/2 IF=50mA ±55 deg. Rise Time tr ＩF=50mA 80 ns Fall Time tf ＩF=50mA 80 ns ‡Total Radiated Power is measured by Photodyne #500 ‡Radiant Intensity is measured by Tektronix J-6512.


epitex Opto-Device & Custom LED TOP IR LED SMT690 ♦SMD Application





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255°C


epitex Opto-Device & Custom LED TOP IR LED SMT700 Lead (Pb) Free Product RoHS compliant

SMT700 High Performance Infrared TOP IR LED

SMT700 consists of an AlGaAs LED mounted on the lead frame as TOP LED package and is sealed with epoxy resin. It emits a spectral band of radiation at 700nm. ♦Outer dimension (Unit: mm) ♦Specifications







epitex Opto-Device & Custom LED TOP IR LED SMT750


SMT750 High Performance Infrared TOP IR LED SMT750 consists of an AlGaAs LED mounted on the lead frame as TOP LED package and is 14mW typical of output power. It emits a spectral band of radiation at 750nm. ♦Outer dimension(Unit:mm） ♦Specifications




Item Symbol Condition Minimum Typical Maximum Unit Forward Voltage VF IF=50mA 1.85 2.00 V Reverse Current IR VR=5V 10 uA Total Radiated Power PO IF=50mA 7.0 14.0 mW Radiant Intensity IE IF=50mA 3.0 6.0 mW/sr Peak Wavelength λP IF=50mA 735 750 765 nm Half Width ∆λ IF=50mA 35 nm Viewing Half Angle θ 1/2 IF=50mA ±55 deg. Rise Time tr ＩF=50mA 80 ns Fall Time tf ＩF=50mA 80 ns ‡Total Radiated Power is measured by Photodyne #500 ‡Radiant Intensity is measured by Tektronix J-6512.




Recommended reflow soldering profile Recommended Land Layout (Unit: mm)



♦Wrapping Moisture barrier bag aluminum laminated film with a desiccant to keep out the moisture absorption during the transportation and storage. EPITEX INC. : 4, Nishiaketa-Cho, Higashi-Kujyou, Minami-Ku, Kyoto, Japan Tel.: ++81-75-682-2338 Fax: ++81-75-682-2267 e-mail: [email protected] http://www.epitex.com

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SMT760 High Performance Infrared TOP IR LED SMT760 consists of an AlGaAs LED mounted on the lead frame as TOP LED package and is 10mW typical of output power. It emits a spectral band of radiation at 760nm. ♦Outer dimension（Unit:mm） ♦Specifications








SMT780 High Performance TOP IR LED SMT780 consists of an AlGaAs LED mounted on the lead frame as TOP LED package and is 10mW typical of output power. It emits a spectral band of radiation at 780nm. ♦Outer dimension（Unit:mm） ♦Specifications



Item Symbol Maximum Rated Value Unit Ambient TemperaturePower Dissipation PD 190 mW Ta=25°C Forward Current IF 100 mA Ta=25°C Pulse Forward Current IFP 500 mA Ta=25°C Reverse Voltage VR 5 V Ta=25°C Operating Temperature TOPR -30 ~ +80 °C Storage Temperature TSTG -40 ~ +80 °C Soldering Temperature TSOL 255 °C ‡Pulse Forward Current condition: Duty=1% and Pulse Width=10us. ‡Soldering condition: Soldering condition must be completed within 10seconds at 255°C ♦Electro-Optical Characteristics [Ta=25°C]



epitex Opto-Device & Custom LED TOP IR LED SMT780 Lead ( Pb ) Free Product – RoHS Compliant ♦SMD Application





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255°C


epitex Opto-Device & Custom LED TOP IR LED SMTQ810N Lead ( Pb ) Free Product – RoHS Compliant

SMTQ810N High Performance Infrared TOP IR LED SMTQ810N consists of an AlGaAs LED mounted on the lead frame as TOP LED package and is 40mW typical of output power and 20mW/sr of radiant Intensity. It emits a spectral band of radiation at 810nm. ♦Outer dimension (Unit: mm) ♦Specifications


Item Symbol Maximum Rated Value Unit Ambient TemperaturePower Dissipation PD 160 mW Ta=25°C Forward Current IF 100 mA Ta=25°C Pulse Forward Current IFP 1000 mA Ta=25°C Reverse Voltage VR 5 V Ta=25°C Junction Temperature TJ 100 °C Thermal Resistance Rthjp 190 K/W Operating Temperature TOPR -20 ~ +80 °C Storage Temperature TSTG -30 ~ +80 °C Soldering Temperature TSOL 255 °C ‡Pulse Forward Current condition: Duty=1% and Pulse Width=10us. ‡Soldering condition: Soldering condition must be completed within 10 seconds at 255°C ♦Electro-Optical Characteristics [Ta=25°C]

Item Symbol Condition Minimum Typical Maximum Unit IF=50mA DC 1.50 1.70 Forward Voltage VF

IF=100mA, tp=20ms 1.55 1.90 V



IF=50mA 10.0 Radiant Intensity IE IF=100mA, tp=20ms 20.0

mW/sr

Peak Wavelength λP IF=50mA 800 810 820 nm Half Width ∆λ IF=50mA 40 nm Viewing Half Angle θ 1/2 IF=50mA ±55 deg.Rise Time tr ＩF=50mA 25 ns Fall Time tf ＩF=50mA 20 ns ‡Total Radiated Power is measured by Photodyne #500 ‡Radiant Intensity is measured by Tektronix J-6512.

1) Product Name TOP IR LED 2) Type No. SMTQ810N 3) Chip (1) Chip Material AlGaAs (2) Chip Dimension 0.4mm*0.4mm (3) Peak Wavelength 810nm typ. 4) Package (1) Lead Frame Die Silver Plated (2) Package Resin PPA Resin (3) Lens Epoxy Resin


epitex Opto-Device & Custom LED TOP IR LED SMTQ810N ♦SMD Application





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255°C


epitex Opto-Device & Custom LED TOP IR LED SMT820 PRELIMINARY Lead (Pb) Free Product RoHS compliant









SMT840 High Performance Infrared TOP IR LED SMT840 consists of an AlGaAs LED mounted on the lead frame as TOP LED package and is 15mW typical of output power. It emits a spectral band of radiation at 840nm. ♦Outer dimension (Unit: mm) ♦Specifications


♦Electro-Optical Characteristics [Ta=25°C]





epitex Opto-Device & Custom LED TOP IR LED SMT850N Lead ( Pb ) Free Product – RoHS Compliant

SMT850N High Performance Infrared TOP IR LED SMT850N consists of an AlGaAs LED mounted on the lead frame as TOP LED package and is 40mW typical of output power. It emits a spectral band of radiation at 850nm. ♦Outer dimension (Unit: mm) ♦Specifications

1) Product Name TOP IR LED 2) Type No. SMT850N 3) Chip (1) Chip Material AlGaAs (2) Chip Dimension 0.4mm*0.4mm (3) Peak Wavelength 850nm typ. 4) Package (1) Lead Frame Die Silver Plated (2) Package Resin PPA Resin (3) Lens Epoxy Resin


Item Symbol Maximum Rated Value Unit Ambient Temperature Power Dissipation PD 160 mW Ta=25°C Forward Current IF 100 mA Ta=25°C Pulse Forward Current IFP 1,000 mA Ta=25°C Reverse Voltage VR 5 V Ta=25°C Junction Temperature TJ 100 °C Thermal Resistance Rthja 190 K/W Operating Temperature TOPR -20 ~ +80 °C Storage Temperature TSTG -30 ~ +80 °C Soldering Temperature TSOL 255 °C



IF=100mA, tp=20ms 1.50 1.8 V




mW/sr

Peak Wavelength λP IF=50mA DC 840 850 860 nm Half Width ∆λ IF=50mA DC 40 nm Viewing Half Angle θ 1/2 IF=50mA DC ±63 deg. Rise Time tr IF=50mA DC 15 ns Fall Time tf IF=50mA DC 10 ns ‡Total Radiated Power is measured by Photodyne #500 ‡Radiant Intensity is measured by Tektronix J-6512.


epitex Opto-Device & Custom LED TOP IR LED SMT850N ♦SMD Application





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255°C


epitex Opto-Device & Custom LED TOP IR LED SMTT850D-2*50 Lead ( Pb ) Free Product – RoHS Compliant

SMTT850D-2*50 High Performance Infrared TOP LED SMTT850D-2*50 consists of two large AlGaAs LED mounted on the lead frame as TOP LED package with copper heat sink and is 42mW typical of output power and 20mW/sr of radiant Intensity. This is adequate for strobe flash light and able to emit 0.8W/sr light operating at pulsed current 4A under 3.5V typ. It emits a spectral band of radiation at 850nm. ♦Specifications ♦Outer dimension (Unit:mm)


Power Dissipation PD 300 mW Ta=25°C Forward Current IF 200 mA Ta=25°C Pulse Forward Current IFP 4000 mA Ta=25°C Reverse Voltage VR 5 V Ta=25°C Operating Temperature TOPR -20 ~ +80 °C Storage Temperature TSTG -30 ~ +80 °C Soldering Temperature TSOL 255 °C ‡Pulse Forward Current condition: Duty=1% and Pulse Width=10us. ‡Soldering condition: Soldering condition must be completed within 10 seconds at 255°C ♦Electro-Optical Characteristics [Ta=25°C]


IFP=4A 3.5 4.2 V

Reverse Current IR VR=5V 10 uA Total Radiated Power PO IF=100mA DC 32.0 42.0 mW

IF=100mA DC 20 Radiant Intensity IE IFP=4A 800

mW/sr


‡Heat sink should be provided by soldering for stable use.

1) Product Name TOP IR LED 2) Type No. SMTT850D-2*50 3) Chip (1) Chip Material AlGaAs (2) Chip Dimension 500um*500nm (3) Chip Numbers 2pcs (4) Peak Wavelength 850nm typ. 4) Package (1) Lead Frame Die Silver Plated (2) Package Resin PPA Resin (3) Cap Resin Clear Epoxy (4) Heat Sink Copper

DEF A

BC

D

E

F

C

B

A

Heat Sink

Heat Sink


epitex Opto-Device & Custom LED TOP IR LED SMT870N Lead ( Pb ) Free Product – RoHS Compliant

SMT870N High Performance Infrared TOP IR LED SMT870N consists of an AlGaAs LED mounted on the lead frame as TOP LED package and is 40mW typical of output power. It emits a spectral band of radiation at 870nm. ♦Outer dimension (Unit: mm) ♦Specifications

1) Product Name TOP IR LED 2) Type No. SMT870N 3) Chip (1) Chip Material AlGaAs (2) Chip Dimension 0.4mm*0.4mm (3) Peak Wavelength 870nm typ. 4) Package (1) Lead Frame Die Silver Plated (2) Package Resin PPA Resin (3) Lens Epoxy Resin





IF=100mA, tp=20ms 1.50 1.8 V




mW/sr



epitex Opto-Device & Custom LED TOP IR LED SMT870N ♦SMD Application





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[°C

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3002001000Time [s]

200°C

150°C

60s 120s 40s 70s

MAX 10s

255°C


epitex Opto-Device & Custom LED TOP IR LED SMT880-2D Lead ( Pb ) Free Product – RoHS Compliant

SMT880-2D High Performance Infrared TOP IR LED SMT880-2D consists of an AlGaAs LED mounted on the lead frame as TOP LED package and is 40mW typical of output power. It emits a spectral band of radiation at 885nm. ♦Outer dimension (Unit: mm) ♦Specifications

1) Product Name TOP IR LED 2) Type No. SMT880-2D 3) Chip (1) Chip Material AlGaAs (2) Chip Dimension 0.4mm*0.4mm (3) Peak Wavelength 885nm typ. 4) Package (1) Lead Frame Die Silver Plated (2) Package Resin PPA Resin (3) Lens Epoxy Resin





IF=100mA, tp=20ms 1.55 1.8 V



IF=50mA DC 8.5 Radiant Intensity IE IF=100mA, tp=20ms 17

mW/sr



epitex Opto-Device & Custom LED TOP IR LED SMT880-2D ♦SMD Application





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3002001000Time [s]

200°C

150°C

60s 120s 40s 70s

MAX 10s

255°C


epitex Opto-Device & Custom LED TOP IR LED SMT880-2D(B) Lead ( Pb ) Free Product – RoHS Compliant

SMT880-2D(B) High Performance Infrared TOP IR LED SMT880-2D(B) consists of an AlGaAs LED mounted on the lead frame as TOP LED package and is 15mW typical of output power. It emits a spectral band of radiation at 885nm. ♦Outer dimension (Unit: mm) ♦Specifications

1) Product Name TOP IR LED 2) Type No. SMT880-2D(B) 3) Chip (1) Chip Material AlGaAs (2) Chip Dimension 0.4mm*0.4mm (3) Peak Wavelength 885nm typ. 4) Package (1) Lead Frame Die Silver Plated (2) Package Resin PPA Resin Black (3) Lens Epoxy Resin

♦Electro-Optical Characteristics [Ta=25°C] Item Symbol Maximum Rated Value Unit Ambient Temperature

Power Dissipation PD 180 mW Ta=25°C Forward Current IF 100 mA Ta=25°C Pulse Forward Current IFP 1,000 mA Ta=25°C Reverse Voltage VR 5 V Ta=25°C Junction Temperature TJ 100 °C Thermal Resistance Rthja 190 K/W Operating Temperature TOPR -20 ~ +80 °C Storage Temperature TSTG -30 ~ +80 °C Soldering Temperature TSOL 255 °C



IF=100mA, tp=20ms 1.55 1.8 V


IF=100mA, tp=20ms 15 mW

IF=50mA DC 2.5 Radiant Intensity IE IF=100mA, tp=20ms 5.0

mW/sr



epitex Opto-Device & Custom LED TOP IR LED SMT880-2D(B) ♦SMD Application





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[°C

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3002001000Time [s]

200°C

150°C

60s 120s 40s 70s

MAX 10s

255°C



SMT890 High Performance Infrared TOP IR LED SMT890 consists of an AlGaAs LED mounted on the lead frame as TOP LED package and is 8mW typical of output power. It emits a spectral band of radiation at 880nm. ♦Outer dimension (Unit: mm) ♦Specifications





Item Symbol Condition Minimum Typical Maximum Unit Forward Voltage VF IF=50mA 1.45 1.70 V Reverse Current IR VR=5V 10 uA Total Radiated Power PO IF=50mA 4.0 8.0 mW Radiant Intensity IE IF=50mA 2.0 4.0 mW/sr Peak Wavelength λP IF=50mA 865 880 895 nm Half Width ∆λ IF=50mA 75 nm Viewing Half Angle θ 1/2 IF=50mA ±55 deg. Rise Time tr ＩF=50mA 800 ns Fall Time tf ＩF=50mA 400 ns ‡Total Radiated Power is measured by Photodyne #500 ‡Radiant Intensity is measured by Tektronix J-6512.



SMT900 High Performance Infrared TOP IR LED SMT900 consists of an AlGaAs LED mounted on the lead frame as TOP LED package and is 12.0mW typical of output power. It emits a spectral band of radiation at 900nm. ♦Outer dimension（Unit:mm） ♦Specifications

1) Product Name TOP IR LED 2) Type No. SMT900 3) Chip (1) Chip Material AlGaAs (2) Peak Wavelength 900nm typ. 4) Package (1) Lead Frame Die Silver Plated (2) Package Resin PPA Resin (3) Lens Silicone or Epoxy Resin


Item Symbol Maximum Rated Value Unit Ambient TemperaturePower Dissipation PD 165 mW Ta=25°C Forward Current IF 100 mA Ta=25°C Pulse Forward Current IFP 500 mA Ta=25°C Reverse Voltage VR 5 V Ta=25°C Operating Temperature TOPR -40 ~ +80 °C Storage Temperature TSTG -40 ~ +80 °C Soldering Temperature TSOL 255 °C ‡Pulse Forward Current condition: Duty=1% and Pulse Width=10us. ‡Soldering condition: Soldering condition must be completed within 10 seconds at 255°C ♦Electro-Optical Characteristics [Ta=25°C]

Item Symbol Condition Minimum Typical Maximum Unit Forward Voltage VF IF=50mA 1.35 1.50 V Reverse Current IR VR=5V 10 uA Total Radiated Power PO IF=50mA 9.0 12.0 mW Radiant Intensity IE IF=50mA 5.0 mW/sr Peak Wavelength λP IF=50mA 890 900 910 nm Half Width ∆λ IF=50mA 40 nm Viewing Half Angle θ 1/2 IF=50mA ±63 deg. Rise Time tr ＩF=50mA 1000 ns Fall Time tf ＩF=50mA 400 ns ‡Total Radiated Power is measured by S3584-08 ‡Radiant Intensity is measured by Tektronix J-6512.



♦SMD Application





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[°C

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3002001000Time [s]

200°C

150°C

60s 120s 40s 70s

MAX 10s

255°C



SMT910 High Performance Infrared TOP IR LED SMT910 consists of an AlGaAs LED mounted on the lead frame as TOP LED package and is 12.0mW typical of output power. It emits a spectral band of radiation at 910nm. ♦Outer dimension（Unit:mm） ♦Specifications

1) Product Name TOP IR LED 2) Type No. SMT910 3) Chip (1) Chip Material AlGaAs (2) Peak Wavelength 910ｎｍ typ. 4) Package (1) Lead Frame Die Silver Plated (2) Package Resin PPA Resin (3) Lens Silicone or Epoxy Resin



Item Symbol Condition Minimum Typical Maximum Unit Forward Voltage VF IF=50mA 1.30 1.50 V Reverse Current IR VR=5V 10 uA Total Radiated Power PO IF=50mA 9.0 12.0 mW Radiant Intensity IE IF=50mA 5.0 mW/sr Peak Wavelength λP IF=50mA 900 910 920 nm Half Width ∆λ IF=50mA 40 nm Viewing Half Angle θ 1/2 IF=50mA ±63 deg. Rise Time tr ＩF=50mA 1000 ns Fall Time tf ＩF=50mA 400 ns ‡Total Radiated Power is measured by S3584-08 ‡Radiant Intensity is measured by Tektronix J-6512.



♦SMD Application





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[°C

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3002001000Time [s]

200°C

150°C

60s 120s 40s 70s

MAX 10s

255°C



SMT940 High Performance Infrared TOP IR LED SMT940 consists of a GaAs LED mounted on the lead frame as TOP LED package and is 30mW typical of output power. It emits a spectral band of radiation at 940nm. ♦Outer dimension (Unit: mm) ♦Specifications

1) Product Name TOP IR LED 2) Type No. SMT940 3) Chip (1) Chip Material GaAs (2) Peak Wavelength 940nm typ. 4) Package (1) Lead Frame Die Silver Plated (2) Package Resin PPA Resin (3) Lens Epoxy Resin


Item Symbol Maximum Rated Value Unit Ambient TemperaturePower Dissipation PD 140 mW Ta=25°C Forward Current IF 100 mA Ta=25°C Pulse Forward Current IFP 1000 mA Ta=25°C Reverse Voltage VR 5 V Ta=25°C Junction Temperature TJ 100 °C Thermal Resistance Rthja 200 K/W Operating Temperature TOPR -20 ~ +80 °C Storage Temperature TSTG -30 ~ +800 °C Soldering Temperature TSOL 255 °C



IF=100mA, tp=20ms 1.38 1.70 V




mW/sr








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[°C

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3002001000Time [s]

200°C

150°C

60s 120s 40s 70s

MAX 10s

255°C



SMT970 High Performance Infrared TOP IR LED SMT970 consists of a GaAs LED mounted on the lead frame as TOP LED package and is 4mW typical of output power. It emits a spectral band of radiation at 970nm. ♦Outer dimension（Unit:mm） ♦Specifications

1) Product Name TOP IR LED 2) Type No. SMT970 3) Chip (1) Chip Material GaAs (2) Peak Wavelength 970nm typ. 4) Package (1) Lead Frame Die Silver Plated (2) Package Resin PPA Resin (3) Lens Epoxy Resin



Item Symbol Condition Minimum Typical Maximum Unit Forward Voltage VF IF=50mA 1.30 1.45 V Reverse Current IR VR=5V 10 uA Total Radiated Power PO IF=50mA 2.0 4.0 mW Radiant Intensity IE IF=50mA 1.5 mW/sr Peak Wavelength λP IF=50mA 960 970 980 nm Half Width ∆λ IF=50mA 50 nm Viewing Half Angle θ 1/2 IF=50mA ±55 deg. Rise Time tr IF=50mA 1000 ns Fall Time tf IF=50mA 500 ns ‡Total Radiated Power is measured by S3584-08 ‡Radiant Intensity is measured by Tektronix J-6512.


epitex Opto-Device & Custom LED SMD TYPE NIR LED SMT1050 Lead ( Pb ) Free Product – RoHS Compliant

SMT1050 High Performance NIR TOP IR LED

SMT1050 consists of an InGaAsP LED mounted on the lead frame as TOP LED package, and is sealed with epoxy resin. It emits a spectral band of radiation at 1050nm. ♦Outer dimension (Unit:mm) ♦Specifications

1) Product Name TOP NIR LED 2) Type No. SMT1050 3) Chip (1) Chip Material InGaAsP (2) Peak Wavelength 1050nm typ. 4) Package (1) Lead Frame Die Silver Plated (2) Package Resin PPA Resin (3) Lens Epoxy resin


Power Dissipation PD 140 mW Ta=25°C Forward Current IF 100 mA Ta=25°C Pulse Forward Current IFP 1,000 mA Ta=25°C Reverse Voltage VR 5 V Ta=25°C Operating Temperature TOPR -20 ~ +85 °C Storage Temperature TSTG -30 ~ +100 °C Soldering Temperature TSOL 255 °C ‡Pulse Forward Current condition: Duty=1% and Pulse Width=1us. ‡Soldering condition: Soldering condition must be completed within 10 seconds at 255°C


Forward Voltage VF IF=50mA 1.15 1.35 V Reverse Current IR VR=5V 10 uＡ Total Radiated Power PO IF=50mA 5.5 mW Radiant Intensity IE IF=50mA 1.6 mW/srPeak Wavelength λP IF=50mA 1000 1050 1100 nm Half Width ∆λ IF=50mA 100 nm Viewing Half Angle θ 1/2 IF=50mA ±55 deg. Rise Time tr ＩF=50mA 20 ns Fall Time tf ＩF=50mA 20 ns ‡Total Radiated Power is measured by PD G8370-85


epitex Opto-Device & Custom LED SMD TYPE NIR LED SMT1070



SMT1070 consists of an InGaAsP LED mounted on the lead frame as TOP LED package, and is sealed with epoxy resin. It emits a spectral band of radiation at 1070nm. ♦Outer dimension(Unit:mm） ♦Specifications

1) Product Name TOP NIR LED 2) Type No. SMT1070 3) Chip (1) Chip Material InGaAsP (2) Peak Wavelength 1070ｎｍｔｙｐ. 4) Package (1) Lead Frame Die Silver Plated (2) Package Resin PPA Resin (3) Lens Epoxy resin




Forward Voltage VF IF=50mA 1.2 1.5 V Reverse Current IR VR=5V 10 uＡ Total Radiated Power PO IF=50mA 1.0 mW Radiant Intensity IE IF=50mA mW/srPeak Wavelength λP IF=50mA 1030 1070 1210 nm Half Width ∆λ IF=50mA 100 nm Viewing Half Angle θ 1/2 IF=50mA ±55 deg. Rise Time tr ＩF=50mA 10 ns Fall Time tf ＩF=50mA 10 ns ‡Total Radiated Power is measured by Ando AQ2140/2742


epitex Opto-Device & Custom LED SMD TYPE NIR LED SMT1200



SMT1200 consists of an InGaAsP LED mounted on the lead frame as TOP LED package, and is sealed with epoxy resin. It emits a spectral band of radiation at 1200nm. ♦Outer dimension（Unit:mm） ♦Specifications

1) Product Name TOP NIR LED 2) Type No. SMT1200 3) Chip (1) Chip Material InGaAsP (2) Peak Wavelength 1200ｎｍｔｙｐ. 4) Package (1) Lead Frame Die Silver Plated (2) Package Resin PPA Resin (3) Lens Epoxy resin


Power Dissipation PD 120 mW Ta=25°C Forward Current IF 100 mA Ta=25°C Pulse Forward Current IFP 500 mA Ta=25°C Reverse Voltage VR 5 V Ta=25°C Operating Temperature TOPR -20 ~ +85 °C Storage Temperature TSTG -30 ~ +100 °C Soldering Temperature TSOL 230 °C ‡Pulse Forward Current condition: Duty=1% and Pulse Width=1us. ‡Soldering condition: Soldering condition must be completed within 3 seconds at 230°C


Forward Voltage VF IF=50mA 1.2 1.5 V Reverse Current IR VR=5V 10 uＡ Total Radiated Power PO IF=50mA 1.0 mW Peak Wavelength λP IF=50mA 1150 1200 1250 nm Half Width ∆λ IF=50mA 100 nm Viewing Half Angle θ 1/2 IF=50mA ±55 deg. Rise Time tr ＩF=50mA 10 ns Fall Time tf ＩF=50mA 10 ns ‡Total Radiated Power is measured by Ando AQ2140/2742



SMT1450 High Performance NIR TOP LED

SMT1450 consists of an InGaAsP LED mounted on the lead frame as TOP LED package, and is sealed with epoxy or silicone resin. It emits a spectral band of radiation at 1450nm. ♦Outer dimension (Unit: mm) ♦Specifications

1) Product Name TOP NIR LED 2) Type No. SMT1450 3) Chip (1) Chip Material InGaAsP (2) Peak Wavelength 1450nm typ. 4) Package (1) Lead Frame Die Silver Plated (2) Package Resin PPA Resin (3) Lens Epoxy or Silicone resin


Power Dissipation PD 70 mW Ta=25°C Forward Current IF 50 mA Ta=25°C Pulse Forward Current IFP 1,000 mA Ta=25°C Reverse Voltage VR 5 V Ta=25°C Operating Temperature TOPR -20 ~ +85 °C Storage Temperature TSTG -30 ~ +100 °C Soldering Temperature TSOL 255 °C ‡Pulse Forward Current condition: Duty=1% and Pulse Width=1us. ‡Soldering condition: Soldering condition must be completed within 10seconds at 255°C


Forward Voltage VF IF=50mA 1.1 1.4 V Reverse Current IR VR=5V 10 uＡ Total Radiated Power PO IF=50mA 3.5 mW Peak Wavelength λP IF=50mA 1400 1450 1500 nm Centroid Wavelength λC IF=50mA 1417 nm Half Width ∆λ IF=50mA 120 nm Viewing Half Angle θ 1/2 IF=50mA ±55 deg. Rise Time tr ＩF=50mA 10 ns Fall Time tf ＩF=50mA 10 ns ‡Total Radiated Power is measured by PD G8370-85.


epitex Opto-Device & Custom LED SMD TYPE NIR LED SMT1450 Lead ( Pb ) Free Product – RoHS Compliant ♦SMD Application





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3002001000Time [s]

200°C

150°C

60s 120s 40s 70s

MAX 10s

255°C




SMT1550 consists of an InGaAsP LED mounted on the lead frame as TOP LED package, and is sealed with epoxy resin or silicone resin. It emits a spectral band of radiation at 1550nm. ♦Outer dimension（Unit:mm） ♦Specifications

1) Product Name TOP NIR LED 2) Type No. SMT1550 3) Chip (1) Chip Material InGaAsP (2) Peak Wavelength 1550nm typ. 4) Package (1) Lead Frame Die Silver Plated (2) Package Resin PPA Resin (3) Lens Epoxy or Silicone resin




Forward Voltage VF IF=50mA 1.1 1.4 V Reverse Current IR VR=5V 10 uＡ Total Radiated Power PO IF=50mA 3.0 mW Peak Wavelength λP IF=50mA 1500 1550 1600 nm Centroid Wavelength λC IF=50mA 1520 nm Half Width ∆λ IF=50mA 115 nm Viewing Half Angle θ 1/2 IF=50mA ±55 deg. Rise Time tr ＩF=50mA 10 ns Fall Time tf ＩF=50mA 10 ns ‡Total Radiated Power is measured by PD G8370-85.


epitex Opto-Device & Custom LED SMD TYPE NIR LED SMT1550 Lead ( Pb ) Free Product – RoHS Compliant ♦SMD Application





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3002001000Time [s]

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150°C

60s 120s 40s 70s

MAX 10s

255°C


epitex Opto-Device & Custom LED SMD TYPE LED SMTW47


SMTW47 High Performance White color TOP LED SMTW47 consists of an InGaN LED mounted with YAG on the lead frame as TOP LED package and emits white color radiation. and is 700mcd typical of Brightness. ♦Outer dimension (Unit: mm)

♦Specifications

(*1): x: 2.3±0.3E-01, y: 2.2±0.3E-01



‡ *1; x: 2.3±0.3E-01, y: 2.2±0.3E-01 ‡ Total Radiated Power is measured by Photodyne #500 ‡ Brightness is measured by Tektronix J-16.

1) Product Name TOP LED 2) Type No. SMTW47 3) Chip (1) Chip Material InGaN (2) Peak Wavelength White color (*1) typ. 4) Package (1) Lead Frame Die Silver Plated (2) Package Resin PPA Resin (3) Lens Epoxy Resin


Item Symbol Condition Minimum Typical Maximum Unit Forward Voltage VF IF=20mA 3.80 4.30 V Reverse Current IR VR=5V 10 uA Total Radiated Power PO IF=20mA 4.0 mW Brightness IV IF=20mA 400 700 mcd Peak Wavelength λP IF=20mA *1 nm Half Width ∆λ IF=20mA - nm Viewing Half Angle θ 1/2 IF=20mA ±55 deg.


epitex Opto-Device & Custom LED TOP IR LED SMTT2*625/2*780 Lead ( Pb ) Free Product – RoHS Compliant

SMTT2*625/2*780 High Performance Infrared TOP IR LED SMT780 consists of an AlGaAs LED mounted on the lead frame as TOP LED package and is 10mW typical of output power. It emits a spectral band of radiation at 780nm. ♦Outer dimension（Unit:mm） ♦Specifications

1) Product Name TOP IR LED 2) Type No. SMTT2*625/2*7803) Chip (1) Chip Material 625nm: AlGaInP 780nm: AlGaAs (2) Peak Wavelength 625/780nm typ. 4) Package (1) Lead Frame Die Silver Plated (2) Package Resin PPA Resin (3) Lens Epoxy Resin


‡Pulse Forward Current condition: Duty=1% and Pulse Width=10us. ‡Soldering condition: Soldering condition must be completed within 10seconds at 255°C ♦Electro-Optical Characteristics [Ta=25°C]

Minimum Typical Maximum Item Symbol Condition625 780 625 780 625 780

Unit

Forward Voltage VF IF=50mA 2.2 1.75 2.5 1.95 V Reverse Current IR VR=5V 10 uA Total Radiated Power PO IF=50mA 10.0 10.0 17.0 17 mW Radiant Intensity IE IF=50mA 6.0 8.0 mW/srBrightness Iv IF=50mA 1600 - Peak Wavelength λP IF=50mA 625 780 nm Half Width ∆λ IF=50mA 25 35 nm Viewing Half Angle θ 1/2 IF=50mA ±55 deg. ‡Total Radiated Power is measured by S3584-08 ‡Radiant Intensity is measured by Tektronix J-6512.

Maximum Rated Value Item Symbol

625nm 780nm Unit Ambient

Temperature

Power Dissipation PD 175 190 mW Ta=25°C Forward Current IF 75 100 mA Ta=25°C Pulse Forward Current IFP 200 500 mA Ta=25°C Reverse Voltage VR 5 V Ta=25°C Operating Temperature TOPR -20 ~ +80 °C Storage Temperature TSTG -30 ~ +80 °C Soldering Temperature TSOL 255 °C


epitex Opto-Device & Custom LED TOP IR LED SMTT2*625/2*780 Lead ( Pb ) Free Product – RoHS Compliant ♦SMD Application

IR-Reflow Soldering Profile for lead free soldering

Don’t put stress on SMD and a circuit board after soldering. ♦Wrapping Moisture barrier bag aluminum laminated film with a desiccant to keep out the moisture absorption during the transportation and storage.

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3002001000Time [s]

200°C

150°C

60s 120s 40s 70s

MAX 10s

255°C


epitex Opto-Device & Custom LED TOP IR LED SMTT2*625/2*780-a Lead ( Pb ) Free Product – RoHS Compliant

SMTT2*625/2*780-a TOP LED with heat sink SMTT2*625/2*780-a consists of 2chips of red color and 2chips of IR LED mounted on TOP LED with heat sink type package. Red color is 5.5mW on 625nm and IR is 6.5mW on 780nm. ♦Specification ♦Outer dimension（Unit:mm）

♦Absolute Maximum Rating Maximum Rated Value

Item Symbol 625nm 780nm

Unit Ambient Temperature

Power Dissipation PD 125 90 mW Ta=25°C Forward Current IF 50 50 mA Ta=25°C Pulse Forward Current IFP 100 200 mA Ta=25°C Reverse Voltage VR 5 V Ta=25°C Operating Temperature TOPR -20 ~ +80 °C Storage Temperature TSTG -30 ~ +80 °C Soldering Temperature TSOL 255 °C ‡Pulse Forward Current condition: Duty=1% and Pulse Width=10us. ‡Soldering condition: Soldering condition must be completed within 10seconds at 255°C ♦Electro-Optical Characteristics [Ta=25°C]


Unit

Forward Voltage VF IF=20mA 2.2 1.6 2.4 1.8 V Reverse Current IR VR=5V 10 uA Total Radiated Power PO IF=20mA 5.5 6.5 mW Radiant Intensity IE IF=20mA 2 3 mW/srBrightness Iv IF=20mA - - Peak Wavelength λP IF=20mA 625 780 nm Half Width ∆λ IF=20mA 15 35 nm Viewing Half Angle θ 1/2 IF=20mA ±55 deg. ‡Total Radiated Power is measured by S3584-08. ‡Radiant Intensity is measured by Tektronix J-6512.

1) Product Name TOP IR LED 2) Type No. SMTT2*625/2*780-a 3) Chip (1) Chip Material 625nm: AlGaInP 780nm: AlGaAs (2) Dimension 625nm-250um 780nm-350um (3) Peak Wavelength 625/780nm typ. 4) Package (1) Lead Frame Die Silver Plated (2) Package Resin PPA Resin (3) Lens Epoxy Resin


epitex Opto-Device & Custom LED TOP IR LED SMTT2*625/2*780-d Lead ( Pb ) Free Product – RoHS Compliant

SMTT2*625/2*780-d TOP LED with heat sink SMTT2*625/2*780-d consists of 2chips of red color and 2chips of IR LED mounted on TOP LED with heat sink type package. Red color is 5.5mW on 625nm and IR is 6.5mW on 780nm. ♦Specification ♦Outer dimension（Unit:mm）

♦Absolute Maximum Rating Maximum Rated Value

Item Symbol 625nm 780nm


Power Dissipation PD 125 90 mW Ta=25°C Forward Current IF 50 50 mA Ta=25°C Pulse Forward Current IFP 100 200 mA Ta=25°C Reverse Voltage VR 5 V Ta=25°C Operating Temperature TOPR -20 ~ +80 °C Storage Temperature TSTG -30 ~ +80 °C Soldering Temperature TSOL 255 °C ‡Pulse Forward Current condition: Duty=1% and Pulse Width=10us. ‡Soldering condition: Soldering condition must be completed within 10seconds at 255°C ♦Electro-Optical Characteristics [Ta=25°C]


Unit

Forward Voltage VF IF=20mA 2.2 1.6 2.4 1.8 V Reverse Current IR VR=5V 10 uA Total Radiated Power PO IF=20mA 5.5 6.5 mW Radiant Intensity IE IF=20mA 2 3 mW/srBrightness Iv IF=20mA - - Peak Wavelength λP IF=20mA 625 780 nm Half Width ∆λ IF=20mA 15 35 nm Viewing Half Angle θ 1/2 IF=20mA ±55 deg. ‡Total Radiated Power is measured by S3584-08. ‡Radiant Intensity is measured by Tektronix J-6512.

1) Product Name TOP IR LED 2) Type No. SMTT2*625/2*780-d 3) Chip (1) Chip Material 625nm: AlGaInP 780nm: AlGaAs (2) Dimension 625nm-250um 780nm-350um (3) Peak Wavelength 625/780nm typ. 4) Package (1) Lead Frame Die Silver Plated (2) Package Resin PPA Resin (3) Lens Epoxy Resin


epitex Opto-Device & Custom LED TOP IR LED SMT660/890 PRELIMINARY Lead (Pb) Free Product RoHS compliant

SMT660/890 High Performance Bi-color TOP LED Bi-color LED of SMT660/890 consists of AlGaAs LEDs mounted on the lead frame as TOP LED package and is sealed with epoxy resin. It emits a spectral band of radiation at 650nm and 890nm at anode common. ♦Outer dimension（Unit:mm） ♦Specifications

1) Product Name Bi-color TOP LED 2) Type No. SMT660/890 3) Chip (1) Chip Material AlGaAs (2) Peak Wavelength 655nm± 5nm/ 885nm±10nm4) Package (1) Lead Frame Die Silver Plated (2) Package Resin PPA Resin (3) Lens Epoxy Resin



Minimum Typical Maximum Unit Item Symbol Condition660nm 890nm 660nm 890nm 660nm 890nm

Forward Voltage VF IF=20mA 1.90 1.30 2.20 1.50 V Reverse Current IR VR=5V 10 uA

Total Radiated Power PO IF=20mA 2.0 2.0 3.0 3.5 mW Radiant Intensity IE IF=20mA 1.5 3.0 mW/srPeak Wavelength λP IF=20mA 650 875 655 885 660 895 nm

Half Width ∆λ IF=20mA 20 75 nm Viewing Half Angle θ 1/2 IF=20mA ±55 deg.


Maximum Rated ValueItem Symbol 660nm 890nm


Power Dissipation PD 75 150 mW Ta=25°C Forward Current IF 30 100 mA Ta=25°C Reverse Voltage VR 5 V Ta=25°C Operating Temperature TOPR -20 ~ +80 °C Storage Temperature TSTG -30 ~ +80 °C Soldering Temperature TSOL 240 °C


epitex Opto-Device & Custom LED SMD TYPE LED SMT660/910


SMT660/910 High Performance Bi-color TOP LED Bi-color LED of SMT660/910 consists of DDH AlGaAs and AlGaAs LEDs mounted on the lead frame as TOP LED package and is sealed with epoxy resin. It emits a spectral band of radiation at 650nm and 910nm at anode common.


1) Product Name Bi-color TOP LED 2) Type No. SMT660/910 3) Chip (1) Chip Material AlGaAs/AlGaAs (2) Peak Wavelength 650nm/910nm 4) Package (1) Lead Frame Die Silver Plated (2) Package Resin PPA Resin (3) Lens Epoxy Resin







Forward Voltage VF IF=20mA 1.90 1.30 2.20 1.50 V Reverse Current IR VR=5V 10 uA Total Radiated Power PO IF=20mA 1.5 1.5 2.5 2.5 mW Radiant Intensity IE IF=20mA 1.5 2.0 mW/srPeak Wavelength λP IF=20mA 640 900 650 910 660 930 nm Half Width ∆λ IF=20mA 20 60 nm Viewing Half Angle θ 1/2 IF=20mA ±55 deg. ‡Total Radiated Power is measured by Photodyne #500 ‡Radiant Intensity is measured by Tektronix J-6512.

EPITEX INC.: 4, Nishiaketa-Cho, Higashi-Kujyou, Minami-Ku, Kyoto, Japan Tel.: ++81-75-682-2338 Fax: ++81-75-682-2267 e-mail: [email protected] http://www.epitex.com

epitex Opto-Device & Custom LED SMD TYPE LED SMT700/940


SMT700/940 High Performance Bi-color TOP LED Bi-color LED of SMT700/940 consists of DDH AlGaAs and GaAs LEDs mounted on the lead frame as TOP LED package and is sealed with epoxy resin. It emits a spectral band of radiation at 700nm and 940nm at anode common.


1) Product Name Bi-color TOP LED 2) Type No. SMT700/940 3) Chip (1) Chip Material AlGaAs/GaAs (2) Peak Wavelength 700nm/940nm 4) Package (1) Lead Frame Die Silver Plated (2) Package Resin PPA Resin (3) Lens Epoxy Resin




Power Dissipation PD 110 80 mW Ta=25°C Forward Current IF 50 50 mA Ta=25°C Pulse Forward Current IFP 200 500 mA Ta=25°C Reverse Voltage VR 5 V Ta=25°C Operating Temperature TOPR -20 ~ +80 °C Storage Temperature TSTG -30 ~ +80 °C Soldering Temperature TSOL 240 °C




Total Radiated Power PO IF=50mA 4.0 5.0 6.0 7.5 mW Peak Wavelength λP IF=50mA 680 930 700 940 720 960 nm




epitex Opto-Device & Custom LED TOP IR LED SMT735/890 Lead (Pb) Free Product RoHS compliant

SMT735/890 High Performance Bi-color TOP LED

Bi-color LED of SMT735/890 consists of AlGaAs LEDs mounted on the lead frame as TOP LED package and is sealed with epoxy resin. It emits a spectral band of radiation at 735nm and 890nm at anode common. ♦Outer dimension（Unit:mm） ♦Specifications

1) Product Name Bi-color TOP LED 2) Type No. SMT735/890 3) Chip (1) Chip Material AlGaAs (2) Peak Wavelength 735nm/890nm 4) Package (1) Lead Frame Die Silver Plated (2) Package Resin PPA Resin (3) Lens Epoxy Resin





Total Radiated Power PO IF=50mA 5.0 4.0 10.0 8.0 mW Radiant Intensity IE IF=50mA 2.0 2.0 5.0 4.0 mW/srPeak Wavelength λP IF=50mA 615 865 735 880 755 895 nm







epitex Opto-Device & Custom LED SMD TYPE LED SMT830/940-A Lead ( Pb ) Free Product – RoHS Compliant

SMT830/940-A High Performance Bi-color TOP LED Bi-color LED of SMT830/940 consists of DDH AlGaAs and GaAs LEDs mounted on the lead frame as TOP LED package and is sealed with epoxy resin. It emits a spectral band of radiation at 830nm and 940nm at anode common.





Power Dissipation PD 90 80 mW Ta=25°C Forward Current IF 50 50 mA Ta=25°C Pulse Forward Current IFP 500 500 mA Ta=25°C Reverse Voltage VR 5 V Ta=25°C Operating Temperature TOPR -20 ~ +80 °C Storage Temperature TSTG -30 ~ +80 °C Soldering Temperature TSOL 255 °C ‡Soldering condition: Soldering condition must be completed within 10 seconds at 255°C ♦Electro-Optical Characteristics [Ta=25°C]



Total Radiated Power PO IF=50mA 5.0 5.0 10.0 7.5 mW Peak Wavelength λP IF=50mA 810 930 830 940 850 960 nm



1) Product Name Bi-color TOP LED 2) Type No. SMT830/940-A 3) Chip (1) Chip Material AlGaAs/GaAs (2) Peak Wavelength 830nm/940nm 4) Package (1) Lead Frame Die Silver Plated (2) Package Resin PPA Resin (3) Lens Epoxy Resin


epitex Opto-Device & Custom LED SMD TYPE LED SMT830/940-C Lead ( Pb ) Free Product – RoHS Compliant

SMT830/940-C High Performance Bi-color TOP LED Bi-color LED of SMT830/940 consists of DDH AlGaAs and GaAs LEDs mounted on the lead frame as TOP LED package and is sealed with epoxy resin. It emits a spectral band of radiation at 830nm and 940nm at cathode common.





Power Dissipation PD 170 140 mW Ta=25°C Forward Current IF 100 100 mA Ta=25°C Pulse Forward Current IFP 500 500 mA Ta=25°C Reverse Voltage VR 5 V Ta=25°C Operating Temperature TOPR -20 ~ +80 °C Storage Temperature TSTG -30 ~ +80 °C Soldering Temperature TSOL 255 °C ‡Soldering condition: Soldering condition must be completed within 10 seconds at 255°C ♦Electro-Optical Characteristics [Ta=25°C]



Total Radiated Power PO IF=50mA 10.0 8.0 20.0 15.0 mW Radiant Intensity IE IF=50mA 10.0 7.0 mW/srPeak Wavelength λP IF=50mA 820 925 830 940 840 955 nm



1) Product Name Bi-color TOP LED 2) Type No. SMT830/940-C 3) Chip (1) Chip Material AlGaAs/GaAs (2) Peak Wavelength 830nm/940nm 4) Package (1) Lead Frame Die Silver Plated (2) Package Resin PPA Resin (3) Lens Epoxy Resin


epitex Opto-Device & Custom LED SMD TYPE LED SMT850/940 Lead ( Pb ) Free Product – RoHS Compliant

SMT850/940 High Performance Bi-color TOP LED Bi-color LED of SMT850/940 consists of DDH AlGaAs and GaAs LEDs mounted on the lead frame as TOP LED package and is sealed with epoxy resin. It emits a spectral band of radiation at 850nm and 940nm at cathode common. ♦Specifications ♦Outer dimension (Unit: mm)




Power Dissipation PD 160 80 mW Ta=25°C Forward Current IF 50 50 mA Ta=25°C Pulse Forward Current IFP 500 500 mA Ta=25°C Reverse Voltage VR 5 V Ta=25°C Junction Temperature TJ 100 °C Thermal Resistance Rthja 200 K/W Operating Temperature TOPR -20 ~ +80 °C Storage Temperature TSTG -30 ~ +80 °C Soldering Temperature TSOL 255 °C ‡Pulse Forward Current condition: Duty=1% and Pulse Width=10us. ‡Soldering condition: Soldering condition must be completed within 10 seconds at 255°C ♦Electro-Optical Characteristics [Ta=25°C]

Minimum Typical Maximum Item Symbol Condition850nm 940nm 850nm 940nm 850nm 940nm

Unit

Forward Voltage VF IF=50mA 1.50 1.30 1.60 1.40 V Reverse Current IR VR=5V 10 uA Total Radiated Power PO IF=50mA 10.0 5.0 18.0 10.0 mW Radiant Intensity IE IF=50mA 10 4 mW/srPeak Wavelength λP IF=50mA 840 930 850 940 860 960 nm Half Width ∆λ IF=50mA 40 50 nm Viewing Half Angle θ 1/2 IF=50mA ±55 deg. ‡Total Radiated Power is measured by Photodyne #500 ‡Brightness is measured by Tektronix J-16.

1) Product Name Bi-color TOP LED 2) Type No. SMT850/940 3) Chip (1) Chip Material AlGaAs/GaAs (2) Chip Dimension 0.4mm*0.4mm (2) Peak Wavelength 850nm/940nm 4) Package (1) Lead Frame Die Silver Plated (2) Package Resin PPA Resin (3) Lens Epoxy Resin

EPITEX INC.: 66-3 Minami-Kawabe Cho, Higashi-Kujyo, Minami-Ku, Kyoto, Japan Tel: ++81-75-682-2338 Fax: ++81-75-682-2267

e-mail: [email protected] http://www.epitex.com

epitex Opto-Device & Custom LED SMD TYPE LED SMT850/940 Lead ( Pb ) Free Product – RoHS Compliant 850nm Datasheet

0.01

0.1

1

10

100

Rel

ativ

e R

adia

nt In

tens

ity (A

.U.)

12 4 6

102 4 6

1002 4 6

1000Forw ard Current (mA)

(ta=25°C, tw =10us, Duty=1%)50mA Standard

Relative Radiant Intensity - Forward Current

10

2

3

456

100

2

3

456

1000

Puls

e Fo

rwar

d C

urre

nt (m

A)

0.001 0.1 10 1000Duration (m s)

10kH

z

1kH

z

100H

z

10H

z

1Hz

Forward Currrent-Pulse Duration

1

10

100

1000

10000

Forw

ard

Cur

rent

(mA

)

2.52.01.51.00.5Forw ard Voltage (V)

(ta=25°C, tw =10us, Duty=1%)

Forward Curent - Forward Voltage

0.1

2

3

456

1

2

3

456

10

Rel

ativ

e R

adia

nt In

tens

ity (A

.U.)

806040200Am bient Tem perature (°C)

If=50m A

Relative Radiant Intensity -Ambient Temperature

900

880

860

840

820

800

Peak

Wav

elen

gth

(nm

)

100806040200Am bient Temperature (°C)

Peak Wavelength -Ambient Temperature

If=50m A

2.5

2.0

1.5

1.0

0.5

0.0

Forw

ard

Volta

ge (V

)

806040200Am bient Temperatture (°C)

If=50m A

Forward Voltage -Ambient Temperture

700

600

500

400

300

200

100

0100806040200

Ambient Temperature (°C)

Allowable Pulse Forward Current -Ambient Temperature

If(850nm)=If(940nm)2 Chip is drivingat the sam e tim e.

(tw =10us, Duty=1%)

Allo

wab

le P

ulse

For

war

d C

urre

nt (m

A)

70

60

50

40

30

20

10

0

Allo

wab

le F

orw

ard

Cur

rent

(mA

)

100806040200Ambient Tem perature (°C)

Allowable Forward Current -Ambient Temperature

Rthja=200K/W

If(850nm )=If(940nm )2 Chip is drivingat the same time.

1.0

0.8

0.6

0.4

0.2

0.0

Rel

ativ

e R

adia

nt In

tens

ity (A

.U.)

950900850800750Wavelength (nm )

(ta=25°C)

Relative Spectral Emission

EPITEX INC.: 66-3 Minami-Kawabe Cho, Higashi-Kujyo, Minami-Ku, Kyoto, JapanTel: ++81-75-682-2338 Fax: ++81-75-682-2267


epitex Opto-Device & Custom LED SMD TYPE LED SMT850/940 Lead ( Pb ) Free Product – RoHS Compliant

940nm Datasheet

700

600

500

400

300

200

100

0

Allo

wab

le P

ulse

For

war

d C

urre

nt (m

A)

100806040200Ambient Temperature (°C)

Allowable Pulse Forward Current -Ambient Temperature

If(850nm)=If(940nm)2 Chip is drivingat the sam e tim e.

(tw =10us, Duty=1%)1.0

0.8

0.6

0.4

0.2

0.0

Rel

ativ

e R

adia

nt In

tens

ity (A

.U.)

10501000950900850Wavelength (nm )

(ta=25°C)

Relative Spectral Emission70

60

50

40

30

20

10

0

Allo

wab

le F

orw

ard

Cur

rent

(mA

)


Allowable Forward Current -Ambient Temperature

Rthja=200K/W

If(850nm )=If(940nm )2 Chip is drivingat the same time.

1

10

100

1000

10000

Forw

ard

Cur

rent

(mA

)

2.52.01.51.00.5Forw ard Voltage (V)

(ta=25°C, tw =10us, Duty=1%)

Forward Curent - Forward Voltage

1000

980

960

940

920

900

Peak

Wav

elen

gth

(nm

)

100806040200Ambient Temperature (°C)

Peak Wavelength -Ambient Temperature

If=50m A

0.1

2

3

456

1

2

3

456

10

Rel

ativ

e R

adia

nt In

tens

ity (A

.U.)


If=50m A

Relative Radiant Intensity -Ambient Temperature

2.5

2.0

1.5

1.0

0.5

0.0

Forw

ard

Volta

ge (V

)

806040200Ambient Temperatture (°C)

If=50m A

Forward Voltage -Ambient Temperture

10

2

3

456

100

2

3

456

1000

Puls

e Fo

rwar

d C

urre

nt (m

A)

0.001 0.1 10 1000Duration (m s)

10kH

z

1kH

z

100H

z

10H

z

1Hz

Forward Currrent-Pulse Duration

0.01

0.1

1

10

100

Rel

ativ

e R

adia

nt In

tens

ity (A

.U.)

12 4 6

102 4 6

1002 4 6

1000Forw ard Current (mA)

(ta=25°C, tw =10us, Duty=1%)50mA Standard

Relative Radiant Intensity - Forward Current

EPITEX INC.: 66-3 Minami-Kawabe Cho, Higashi-Kujyo, Minami-Ku, Kyoto, JapanTel: ++81-75-682-2338 Fax: ++81-75-682-2267


epitex Opto-Device & Custom LED SMD TYPE LED SMT850/940 Lead ( Pb ) Free Product – RoHS Compliant ♦SMD Application




♦Wrapping Moisture barrier bag aluminum laminated film with a desiccant to keep out the moisture absorption during the transportation and storage. EPITEX INC.: 66-3 Minami-Kawabe Cho, Higashi-Kujyo, Minami-Ku, Kyoto, Japan

300

250

200

150

100

50

0

Tem

pera

ture

[°C

]

3002001000Time [s]

200°C

150°C

60s 120s 40s 70s

MAX 10s

255°C

Tel: ++81-75-682-2338 Fax: ++81-75-682-2267 e-mail: [email protected] http://www.epitex.com

epitex Opto-Device & Custom LED TOP IR LED SMT430/505/568


SMT430/505/568 SMT430/505/568 consists of an InGaN and AlGaInP LEDs mounted on the lead frame as TOP LED package and is sealed with epoxy resin. It emits a spectral band of radiation at 430nm, 505nm and 568nm. ♦Outer dimension（Unit:mm） ♦Specifications

1) Product Name Tri-color TOP LED 2) Type No. SMT430/505/568 3) Chip (1) Chip Material InGaN, AlGaInP (2) Peak Wavelength 430nm, 505nm, 568nm 4) Package (1) Lead Frame Die Silver Plated (2) Package Resin PPA Resin (3) Lens Epoxy Resin

♦Absolute Maximum Rating [Ta=25°C]


Minimum Typical Maximum Item Symbol Condition430 505 568 430 505 568 430 505 568

Unit

Forward Voltage VF IF=20mA 3.8 3.5 2.0 4.8 4.3 2.3 V Reverse Current IR VR=5V 10 uA Total Radiated Power PO IF=20mA 0.3 1.0 0.2 mW Radiant Intensity IE IF=20mA mW/srPeak Wavelength λP IF=20mA 420 495 560 430 505 565 440 515 575 nm Half Width ∆λ IF=20mA 50 40 15 nm Viewing Half Angle θ 1/2 IF=20mA ±55 deg. ‡Total Radiated Power is measured by Photodyne #500 ‡Radiant Intensity is measured by Tektronix J-6512.

Maximum Rated Value Item Symbol 430nm 505nm 568nm

Unit

Power Dissipation PD 125 100 mW Forward Current IF 30 50 mA Reverse Voltage VR 5 V Operating Temperature TOPR -20 ~ +80 °C Storage Temperature TSTG -30 ~ +80 °C Soldering Temperature TSOL 240 °C


epitex Opto-Device & Custom LED TOP IR LED SMT568/635/760


SMT568/635/760 SMT568/635/760 consists of an AlGaInP, AlGaAs LEDs mounted on the lead frame as TOP LED package and is sealed with epoxy resin. It emits a spectral band of radiation at 568nm, 635nm and 760nm. ♦Outer dimension（Unit:mm） ♦Specifications

1) Product Name Tri-color TOP LED 2) Type No. SMT568/635/760 3) Chip (1) Chip Material AlGaInP, AlGaAs (2) Peak Wavelength 568nm, 635nm, 760nm 4) Package (1) Lead Frame Die Silver Plated (2) Package Resin PPA Resin (3) Lens Epoxy Resin




Unit

Forward Voltage VF IF=20mA 2.0 3.5 2.0 2.3 4.3 2.3 V Reverse Current IR VR=5V 10 uA Total Radiated Power PO IF=20mA 0.2 0.6 7.0 mW Radiant Intensity IE IF=20mA mW/srPeak Wavelength λP IF=20mA 560 632 750 565 635 760 575 638 770 nm Half Width ∆λ IF=20mA 15 20 30 nm Viewing Half Angle θ 1/2 IF=20mA ±55 deg. ‡Total Radiated Power is measured by Photodyne #500 ‡Radiant Intensity is measured by Tektronix J-6512.


Unit

Power Dissipation PD 100 mW Forward Current IF 50 mA Reverse Voltage VR 5 V Operating Temperature TOPR -20 ~ +80 °C Storage Temperature TSTG -30 ~ +80 °C Soldering Temperature TSOL 240 °C


epitex Opto-Device & Custom LED TOP IR LED SMT-RGB Lead (Pb) Free Product RoHS compliant

SMT-RGB High Bright RGB TOP LED SMT470.525.645 consists of an RGB LEDs mounted on the lead frame as TOP LED package and is sealed with epoxy resin. It emits a spectral band of radiation at 470nm, 525nm and 645nm at cathode common. ♦Outer dimension（Unit: mm） ♦Specifications

1) Product Name TOP RGB LED 2) Type No. SMT-RGB 3) Chip (1) Chip Material InGaN, AlGaInP (2) Peak Wavelength 470nm, 525nm, 645nm 4) Package (1) Lead Frame Die Silver Plated (2) Package Resin PPA Resin (3) Lens Epoxy Resin




Unit

Forward Voltage VF IF=20mA 3.8 3.5 2.0 4.3 4.3 2.3 V Reverse Current IR VR=5V 10 uA Total Radiated Power PO IF=20mA 3.5 3.0 2.0 mW Brightness Iv IF=20mA 100 300 100 200 700 200 mcd Radiant Intensity IE IF=20mA mW/srPeak Wavelength λP IF=20mA 460 515 630 470 525 640 480 535 650 nm Half Width ∆λ IF=20mA 25 40 20 nm Viewing Half Angle θ 1/2 IF=20mA ±55 deg. ‡Total Radiated Power is measured by Photodyne #500 ‡Radiant Intensity is measured by Tektronix J-6512. EPITEX INC. : 4, Nishiaketa-Cho, Higashi-Kujyou, Minami-Ku, Kyoto, Japan


Unit

Power Dissipation PD 120 mW Forward Current IF 30 30 50 mA Reverse Voltage VR 5 V Operating Temperature TOPR -20 ~ +80 °C Storage Temperature TSTG -30 ~ +80 °C Soldering Temperature TSOL 240 °C

Tel.: ++81-75-682-2338 Fax: ++81-75-682-2267 e-mail: [email protected] http://www.epitex.com

epitex Opto-Device & Custom LED TOP IR LED SMT640/700/910 Lead ( Pb ) Free Product – RoHS Compliant

SMT640/700/910 SMT640/700/910 consists of an AlGaAs LEDs mounted on the lead frame as TOP LED package and is sealed with epoxy resin. It emits a spectral band of radiation at 640nm, 700nm and 910nm. ♦Outer dimension（Unit:mm） ♦Specifications

1) Product Name Tri-color TOP LED 2) Type No. SMT640/700/910 3) Chip (1) Chip Material AlGaAs (2) Peak Wavelength 640nm, 700nm, 910nm.4) Package (1) Lead Frame Die Silver Plated (2) Package Resin PPA Resin (3) Lens Epoxy Resin

♦Absolute Maximum Rating [Ta=25°C] Maximum Rated Value Item Symbol

640nm 700nm 910nm Unit

Power Dissipation PD 110 120 150 mW Forward Current IF 50 50 100 mA Reverse Voltage VR 5 V Junction Temperature TJ 100 °C Thermal Resistance Rthjp 190 160 290 K/W Operating Temperature TOPR -30~ +80 °C Storage Temperature TSTG -40~ +80 °C Soldering Temperature TSOL 255 °C ‡Soldering condition: Soldering condition must be completed within 10 seconds at 255°C ♦Electro-Optical Characteristics [Ta=25°C]


Unit

Forward Voltage VF IF=20mA 2.0 1.8 1.3 2.2 2.1 1.4 V Reverse Current IR VR=5V 10 uA Total Radiated Power PO IF=20mA 0.3 1.2 2.5 0.6 2.5 4.5 mW Radiant Intensity IE IF=20mA 3.0 10 18 mW/srPeak Wavelength λP IF=20mA 635 695 895 640 700 910 645 705 925 nm Half Width ∆λ IF=20mA 20 24 42 nm Viewing Half Angle θ 1/2 IF=20mA ±55 deg. ‡Total Radiated Power is measured by Photodyne #500 ‡Radiant Intensity is measured by Tektronix J-6512.


epitex Opto-Device & Custom LED SMD TYPE LED SMT735/780/810 Lead ( Pb ) Free Product – RoHS Compliant

SMT735/780/810 Tri-colors TOP LED Tri-colors LED of SMT735/780/810 consists of DDH AlGaAs LEDs mounted on the lead frame as TOP LED package and is sealed with epoxy resin. It emits a spectral band of radiation at 735nm, 780nm and 810nm at anode common.





Power Dissipation PD 165 190 210 mW Ta=25°C Forward Current IF 75 75 100 mA Ta=25°C Pulse Forward Current IFP 300 500 500 mA Ta=25°C Reverse Voltage VR 5 V Ta=25°C Junction Temperature TJ 100 °C Thermal Resistance Rthja 190 K/W Operating Temperature TOPR -20 ~ +80 °C Storage Temperature TSTG -30 ~ +80 °C Soldering Temperature TSOL 255 °C ‡Pulse Forward Current condition: Duty=1% and Pulse Width=10us.



1) Product Name Tri-colors TOP LED 2) Type No. SMT735/780/810 3) Chip (1) Chip Material AlGaAs (2) Peak Wavelength 735nm/780nm/810nm 4) Package (1) Lead Frame Die Silver Plated (2) Package Resin PPA Resin (3) Lens Epoxy Resin


Unit

Forward Voltage VF IF=50mA 1.8 1.7 1.6 2.1 2.0 2.0 V Reverse Current IR VR=5V 10 uA Total Radiated Power PO IF=50mA 8 10 10 12 16 17 mW Radiant Intensity IE IF=50mA 3 4 4 6 8 8 mW/srPeak Wavelength λP IF=50mA 725 770 800 735 780 810 745 790 820 nm Half Width ∆λ IF=50mA 25 30 30 nm Viewing Half Angle θ 1/2 IF=50mA ±55 deg.



♦SMD Application





300

250

200

150

100

50

0

Tem

pera

ture

[°C

]

3002001000Time [s]

200°C

150°C

60s 120s 40s 70s

MAX 10s

255°C



SMT850/890/940 Tri-colors TOP LED Tri-colors LED of SMT850/890/940 consists of AlGaAs LEDs mounted on the lead frame as TOP LED package and is sealed with epoxy resin. It emits a spectral band of radiation at 850nm, 890nm and 940nm at anode common.





Power Dissipation PD 160 190 210 mW Ta=25°C Forward Current IF 100 75 100 mA Ta=25°C Pulse Forward Current IFP 500 500 500 mA Ta=25°C Reverse Voltage VR 5 V Ta=25°C Junction Temperature TJ 100 °C Thermal Resistance Rthja 190 K/W Operating Temperature TOPR -20 ~ +80 °C Storage Temperature TSTG -30 ~ +80 °C Soldering Temperature TSOL 255 °C ‡Pulse Forward Current condition: Duty=1% and Pulse Width=10us.



1) Product Name Tri-colors TOP LED 2) Type No. SMT850/890/940 3) Chip (1) Chip Material AlGaAs (2) Peak Wavelength 850nm/890nm/940nm 4) Package (1) Lead Frame Die Silver Plated (2) Package Resin PPA Resin (3) Lens Epoxy Resin


Unit

Forward Voltage VF IF=50mA 1.6 1.4 1.3 1.8 1.7 1.4 V Reverse Current IR VR=5V 10 uA Total Radiated Power PO IF=50mA 8 6 4 14 10 8 mW Radiant Intensity IE IF=50mA 4 3 2 8 6 4 mW/srPeak Wavelength λP IF=50mA 840 890 925 850 890 940 860 900 955 nm Half Width ∆λ IF=50mA 40 50 50 nm Viewing Half Angle θ 1/2 IF=50mA ±55 deg.



♦SMD Application





300

250

200

150

100

50

0

Tem

pera

ture

[°C

]

3002001000Time [s]

200°C

150°C

60s 120s 40s 70s

MAX 10s

255°C


Surface mount LED (TOP LED) - ebisudenshi.co.jpebisudenshi.co.jp/PDF/epitex_3.pdf · 2011-09-16 ·...

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Transcript of Surface mount LED (TOP LED) - ebisudenshi.co.jpebisudenshi.co.jp/PDF/epitex_3.pdf · 2011-09-16 ·...