Extended Abstracts of

the 1994 International Conference on

SOLID STATE DEVICES AND MATERIALS

August 23-26, 1994

Yokohama

Pacifico Yokohama

Sponsored by

THE JAPAN SOCIETY OF APPLIED PHYSICS

in cooperation with

The Institute of Electronics, Information and Communication Engineers of Japan

IEEE Electron Devices Society

IEEE Tokyo Section

The Institute of Electrical Engineers of Japan

The Electrochemical Society of Japan

The Institute of Television Engineers of Japan

American Vacuum Society

CONTENTS

Symposium 1-1: APCT'94 Epitaxial Growth (14:00-15:50)

14:00 (1) Growth Dynamics of III-V Semiconductor Films (Invited)B.A. Joyce, Semiconductor Materials IRC, U.K 1

14:30 (2) Two Dimensional Growth of GaN on Various Substrates by Gas Source Molecular Beam

Epitaxy Using RF-Radical Nitrogen SourceA. Kikuchi, H. Hoshi and K. Kishino, Sophia Univ., Japan 4

14:50 (3) Plasma-Assisted MOCVD Growth of GaAs/GaN/GaAs Thin-Layer Structures by N-As

Replacement Using N-RadicalsM. Sato, NTT, Japan 7

15:10 (4) Anomalous Step Bunching of a Strained InGaAs Epitaxial Layer Grown on an Off-AngledGaAs Substrate

K. Fukagai and S. Ishikawa, NEC, Japan 1015:30 (5) Surface Second-Harmonic Generation (SHG) Study of Epitaxial Growth of GaAs

C. Yamada and T. Kimura, OTL, Japan 13

Symposium 1-2: APCT'94 Novel Processing Technologies (16:10-18:00)

16:10 (1) New Challenges for Delta-Like Confinement of Impurities in GaAs (Invited)K.H. Ploog and L. Daweritz, Paul-Drude-Inst. Festkorperelektronik, F.R.G 16

16:40 (2) Control of As Precipitation in Low Temperature GaAs by Electronic and Isoelectronic

Delta DopingT.M. Cheng, C.Y. Chang and J.H. Huang, Nat'l Chiao Tung Univ., Taiwan, China 19

17:00 (3) Stress Relaxation of GaAs on Si by Laser Pulse Irradiation

H. Uchida, T. Soga, H. Nishikawa, T. Jimbo and M. Umeno, Nagoya Inst. Tech.,

Japan 22

17:20 (4) Improvements in the Electrical Activity of Nitrogen Doped P-Type ZnSe Due to InGaP Buf¬

fer LayerS. Saito, Y. Nishikawa, J. Rennie, M. Onomura, P.J. Parbrook, K. Nitta, M. Ishikawa

and G. Hatakoshi, Toshiba, Japan 25

17:40 (5) Anti-Phase Direct Bonding of InP and GaAs and Its Application to Semiconductor Lasers

Y. Okuno, K. Uomi, M. Aoki, T. Taniwatari, M. Suzuki and M. Kondow, Hitachi,

Japan 28

Symposium 1-3: APCT'94 Scanning Probe Technology I (9:10-10:40)

9:10 (1) Single Atom Manipulation and Its Real-Time Detection by STM (Invited)M. Aono, E. Aono Atomcraft Project and Riken, Japan 31

9:40 (2) Direct Observation of a Scanning Tunneling Microscope Tip Apex Using a Transmission

Electron MicroscopeM.I. Lutwyche and Y. Wada, Hitachi, Japan 34

10:00 (3) Observation of Positively Charged Trap Site in Silicon Oxide Layer with an Atomic Force

MicroscopeY. Fukano, T. Okusako, T. Uchihashi, Y. Sugawara, Y. Yamanishi*, T. Oasa* and

S. Morita, Hiroshima Univ., and *Sumitomo Metal Ind., Japan 37

10:20 (4) Evaluation of Thin Si02 Layers by Beam Assisted Scanning Tunneling Microscope

S. Heike, Y. Wada, S. Kondo, M. Lutwyche, K. Murayama* and H. Kuroda*, Hitachi,

and *Hitachi Construction Machinery, Japan 40

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Symposium 1-4: APCT'94 Scanning Probe Technology II (11:00-12:30)

11:00 (1) AFM-Based Fabrication of Semiconductor Nanostructures (Invited)

E.S. Snow, P.M. Campbell and P.J. McMarr, Naval Res. Lab., U.S.A 43

11:30 (2) First Application of STM Nano-Meter Size Oxidation Process to Planar-TypeMIM Diode

K. Matsumoto, S. Takahashi, M. Ishii, M. Hoshi*, A. Kurokawa, S. Ichimura and

A. Ando, ETL and *Nissan Motor, Japan 46

11:50 (3) AFM Observation of Self-Assembled Monolayer Films on GaAs(llO)

H. Ohno, M. Motomatsu, W. Mizutani* and H. Tokumoto*, JRCAT-ATP, and

*JRCAT-NAIR, Japan 49

12:10 (4) 2x6 Surface Reconstruction of Sulfur-Terminated GaAs (001) Observed by Scanning Tun¬

neling MicroscopyS. Tsukamoto and N. Koguchi, Nat'l Res. Inst, for Metals, Japan 52

Symposium 1-5: APCT'94 Nanostructures I (14:00-15:40)

14:00 (1) Spectroscopy of Quantum Dots and Antidots (Invited)

D. Heitmann, Univ. Hamburg, F.R.G 55

14:30 (2) Doped Nanocrystals of Semiconductors—A New Class of Luminescent Materials (Invited)

R.N. Bhargava, Nanocrystals Technology, U.S.A 58

15:00 (3) InGaAs/GaAs Quantum Dots (~15nm) Grown by MOCVD

M. Nishioka, J. Oshinowo, S. Ishida and Y. Arakawa, Univ. Tokyo, Japan 60

15:20 (4) Blue-Shifted Photoluminescence from GaAs/AlGaAs Quantum-Well Box Fabricated by

Low-Damage Wet Chemical Etching

K. Momma, N. Ogasawara, S. Fukatsu* and Y. Shiraki*, Univ. Electro-Comm., and

*Univ. Tokyo, Japan 63

Symposium 1-6: APCT'94 Nanostructures II (16:00-17:50)

16:00 (1) InGaAs Strained Quantum Wire Structures: Optical Properties and Laser Applications

(Invited)J. Christen, E. Kapon*, M. Grundmann, M. Walthcr** and D. Bimberg, Otto-von-

Guericke-Univ., F.R.G., *Swiss Federal Inst. Tech., Switzerland and **Bellcore, U.S.A 66

16:30 (2) Cathodoluminescence of GaAs/AlAs Quantum Wells Grown on Stripe and Square Patterns

by Molecular Beam Epitaxy

I. Matsuyama, M. Lopez, N. Tanaka and T. Ishikawa, OTL, Japan 69

16:50 (3) Composition Modulation in Quantum Wire Structures on Vicinal (110) GaAs Studied byPhotoluminescence

K. Inoue, H.K. Huang, M. Takeuchi, K. Kimura, H. Nakashima, M. Iwane, O. Matsudaand K. Murase, Osaka Univ., Japan 72

17:10 (4) Control of Current in 2DEG Channel by Oxide Wire Formed with AFMM. Ishii and K. Matsumoto, ETL, Japan 75

17:30 (5) Local Incorporation of Lateral Piezoelectric Fields in Strained III/V SemiconductorNanostructures

K.H. Ploog and M. Ilg, Paul-Drude-Inst., F.R.G 78

Symposium 1-7: APCT'94 Visible Light Source (9:10-10:40)

9:10 (1) InGaN/AlGaN Double-Heterostructure Light-Emitting Diodes (Invited)S. Nakamura, Nichia Chemical Industries Ltd, Japan 81

9:40 (2) 650 nm-AlGalnP Visible Light-LD with Dry-Etched Mesa StripeT. Yoshikawa, Y. Sugimoto, H. Hotta, K. Kobayashi, F. Miyasaka and K. Asakawa,NEC, Japan 84

10:00 (3) Picosecond Optical Bistability of ZnS-ZnTe/GaAs MQWs on Reflection at RoomTemperature

D.Z. Shen, X.W. Fan and B.J. Yang, Academia Sinica, China 8710:20 (4) Single Chip Integration of LED, Waveguide and Micromirrors

T. Nagata, T. Namba, K. Miyake, T. Doi, T. Miyamoto, Y. Kuroda, S. Yokoyama,S. Miyazaki, M. Koyanagi and M. Hirosc, Hiroshima Univ., Japan 90

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Symposium 1-8: APCT'94 Beam-Induced Process (16:00-17:50)

16:00 (1) Electron-Beam Induced Etching as a Key Process in Through-Vacuum Fabrication ofGaAs-AlGaAs Nanoheterostructures (Invited)

Y. Katayama, T. Ishikawa, N. Tanaka, M. Lopez, I. Matsuyama, Y. Ide and M. Yamada,OTL, Japan 93

16:30 (2) EB Patterning Mechanism of GaAs Oxide Mask Layers Used in In-Situ EB LithographyN. Tanaka, M. Lopez, I. Matsuyama and T. Ishikawa, OTL, Japan 96

16:50 (3) Direct Patterning of the Current Confinement Structure for p-Type Column-Ill Nitrides byLow-Energy Electron Beam Irradiation Treatment

M. Inamori, H. Sakai, T. Tanaka*, H. Amano and I. Akasaki, Meijo Univ., and

*Pioneer, Japan 9917:10 (4) Natural Superlattice Disordering in GalnP/AlGalnP by Ultra-Low Energy Ion Exposure

J. Hommel, B. Hohing, C. Geng, F. Scholz and H. Schweizer, Universitat Stuttgart,F.R.G 102

17:30 (5) Disordering of CdZnSe/ZnSe Strained Layer Superlattices by Si Ion-Implantation and Low-

Temperature AnnealingT. Yokogawa, J.L. Merz, H. Luo*. J.K. Furdyna*, M. Kuttler**, D. Bimberg** andS. Lau, Univ. California, U.S.A., *Univ. Notre Dame and **Technische Univ. Berlin,F.R.G 105

Symposium 1-9: APCT'94 Characterization I (9:10-10:50)

9:10 (1) Photoreflectance and Photoluminescence Study of Direct-and Indirect-Gap Band Lineupsof GaAsP/GaP Strained Quantum Wells

H. Yaguchi, S. Hashimoto, T. Sugita, Y. Hara, K. Onabe, Y. Shiraki and R. Ito, Univ.

Tokyo, Japan 108

9:30 (2) Optical Study of Exciton Oscillator Strength in Semiconductor Quantum Wells

B. Zhang, S.S. Kano*, R. Ito and Y. Shiraki, Univ. Tokyo, and *IBM, Japan Ill

9:50 (3) Excitation and Relaxation of Yb 4/-Shell in InP Host-Energy Compensation by a Multi-

Phonon Process

A. Taguchi and K. Takahei, NTT, Japan 114

10:10 (4) Quantitative Determination of the Order Parameter in Ordered III-V Semiconductors by

TEM and TED

M.H. Bode, S. Kurtz, D.J. Arent, K. Bertness and J. Olson, Nat'l Renewable Energy

Lab., U.S.A 117

10:30 (5) DLTS Study of Deep Levels in Si-Doped InxAli_xAs Layers Grown by Molecular Beam

EpitaxyH. Tomozawa, A. Malinin, T. Hashizume and H. Hasegawa, Hokkaido Univ., Japan... 120

Symposium MO: APCT'94 Optical Devices I (11:10-12:40)

11:10 (1) Metallic and Dielectric Photonic Crystals for Photon Control (Invited)

E. Yablonovitch and M. Sickmiller, UCLA Electrical Eng'g Dept., U.S.A 123

11:40 (2) GalnAs/GaAs Micro-Arc Ring Semiconductor Laser

S. Mitsugi, J. Kato, F. Koyama, A. Matsutani, T. Mukaihara and K. Iga, Tokyo Inst.

Tech., Japan 124

12:00 (3) Two-Dimensional Bi-Periodic Grating Coupled One- and Two-Color Quantum Well

Infrared Photodetectors

K.L. Tsai, C.P. Lee, J.S. Tsang, H.R. Chen and D.C. Liu, Nat'l Chiao Tung Univ.,

Taiwan, China 127

12:20 (4) Hot Electron Effects in Infrared Multiple-Quantum-Well Phototransistor

V. Ryzhii and M. Ershov, Univ. Aizu, Japan 130

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Symposium Ml: APCT'94 Optical Devices II (14:00-15:50)

00 (1) Particle Statistics and Quantum Dynamics in a Semiconductor Quantum-Well Microcavity(Invited)

J. Jacobson, H. Cao, G. Bjork, S. Pau and Y. Yamamoto, Stanford Univ., U.S.A 13330 (2) Wavelength Filtering Operation in Absorptive-Grating Gain-Coupled DFB Laser

T. Otani, T.K. Sudoh, Y. Nakano, K. Tada and H. Ishikuro, Univ. Tokyo, Japan 13$50 (3) Formation of High Contrast Periodic Corrugations by Optimizing Optical Parameters of

Photoresists in 325nm Laser Holographic ExposureK. Okamoto, Y. Nakano* and K. Tada*, Nikon, and *Univ. Tokyo, Japan 139

10 (4) Ultrahigh-Reflectivity (99.8%) InGaP/GaAs Multilayer Reflector Grown by MOCVD forHighly Reliable 0.98-/;m VCSELs

K. Shinoda, K. Hiramoto, K. Uomi and T. Tsuchiya, Hitachi, Japan 14230 (5) Photonic Devices Based on Crystalline Organic Semiconductors for Optoelectronic In¬

tegrated CircuitsW. Kowalsky, C. Rompf and D. Ammermann, Univ. Ulm, F.R.G 145

Symposium I: APCT'94 Epitaxial Growth

(1) Low Temperature Growth of InGaAs on GaAs(100) by Chemical Beam Epitaxy UsingUnprccracked Monoethylarsine

J.-R. Ro, S.-J. Park, S.-B. Kim and E.-H. Lee, Elec. & Telecom. Res. Inst., Korea 148(2) STM Study of Ultra Thin Fe Films Grown on GaAs(100) Surface

H. Takeshita*>**, H. Akinaga*, M. Ehinger***, Y. Suzuki*, K. Ando*** andK. Tanaka*, *NAIR, **Nihon Univ. and ***ETL, Japan 151

(3) Compositional Nun-Uniformity of Selectively Grown GaxInj-xP from High ResolutionDouble-Crystal X-Ray Measurement

S.-H. Chan, S.M. Sze and C.-Y. Chang, Nat'l Chiao Tung Univ., Taiwan, China 154(4) Generation of the Surface Cross-Hatch Pattern in In„Ga: xAs/GaAs Epitaxial Layers

Grown by MOCVD

M. Yoon, J.-H. Baek, B. Lee, H.-H. Park and E.-H. Lee, Elec. Telecomm., Korea 157(5) In Situ Analysis of Two-Dimensional Distribution of Stresses in Growing Films

S. Tamulevicius, M. Andrulevicius, A. Matiukas and L. Pranevicius*, Kaunas Univ.Tech., and *Vytatutas Magnus Univ., Lithuania 161

(6) Vertical Transport Properties of Photogenerated Carrier in InGaAs/GaAs Strained Multi¬ple Quantum Wells

T. Kitatani, Y. Yazawa, J. Minemura, K. Tamura and T. Warabisako, Hitachi, Japan... 163(7) Compositional Disordering of AlGaAs/GaAs Superlattices by Low Temperature Grown

GaAs

J.S. Tsang, C.P. Lee, J.C. Fan, K.L. Tsai and H.R. Chen, Nat'l Chiao Tung Univ.,Taiwan 166

(8) Growth Mode Transition in GaAs/GaP(001) by Molecular Beam EpitaxyM. Yoshikawa, T. Nomura, K. Ishikawa and M. Hagino, Shizuoka Univ., Japan 169

(9) Extremely Low Energy EBE-Epitaxy of GaAs on the FluoridesS.M. Hwang, A. Izumi, K. Kawasaki and K. Tsutsui, Tokyo Inst. Tech., Japan 172

(10) Fabrication of GaAs/AlGaAs Quantum Dots by Metal-Organic Vapor Phase Epitaxy onPatterned GaAs Substrates

J. Motohisa, K. Kumakura, M. Kishida, T. Yamazaki, T. Fukui, H. 'Hasegawa andK. Wada*, Hokkaido Univ., and *NTT, Japan 175

(11) Misorientation Effects on Al Composition in AlxGa!.-xAs/GaAs Determined by High-Resolution XRD

J.-H. Baek, M. Yoon, B. Lee and E.-H. Lee, Elec. Telecomm., Korea 178

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Symposium I: APCT'94 Fabrication and Characterization Technologies

(1) A Novel Surface Passivation Scheme for Compound Semiconductor Using Silicon InterfaceControl Layer and Its Application to Near-Surface Quantum Wells

S. Kodama, S. Koyanagi and H. Hasegawa, Hokkaido Univ., Japan 181(2) Combined Effects of High-Energy Si, Zn and Ga Ion Implantation and Annealing on the

Reduction of Threading Dislocations in GaAs on SiM. Tamura and T. Saitoh, OTL, Japan 184

(3) Characterization of P- and N-type Impurity Diffusions in GaAs from Doped Silica FilmsK. Okamoto, A. Yamada, Y. Shimogaki*, Y. Nakano* and K. Tada*, Nikon, and *Univ.Tokyo, Japan 187

(4) Nanofabrication of Materials with Scanning Tunneling MicroscopeS. Kondo, S. Heike, M. Lutwyche and Y. Wada, Hitachi, Japan 190

(5) Surface Nitridation Process of (100) GaAs by NHrPlasma Treatment with Planar MagneticField

A. Masuda, Y. Yonezawa*, A. Morimoto and T. Shimizu, Kanazawa Univ., and in¬dustrial Res. Inst, of Ishikawa Prefecture, Japan 193

(6) Surface Morphology of (NH4)2SX-Treated GaAs(lOO) Investigated by Scanning TunnelingMicroscope

J.S. Ha, S.-B. Kim, S.-J. Park and E.-H. Lee, Elec. & Telecom. Res. Inst., Korea 196(7) Investigation of Surface Damage in GalnAs/GalnAsP/InP Wire Structures by Low-

Energy-Reactive-Ion Assisted Radical EtchingM. Tamura, Y. Nagashima, K. Kudo, K.-C. Shin, S. Tamura, A. Ubukata* and S. Arai,Tokyo Inst. Tech., and *Nippon Sanso, Japan 199

(8) Optical Properties of Low Temperature Grown GaAs: The Influence of a Hydrogen PlasmaTreatment

J. Vetterhoffer, J. Weber and K. Kohler*, Max-Planck-Inst., and *Fraunhofer-Inst. fur

Angewandte Festkorperphysik, F.R.G 202(9) Photoellipsometry Study of o-Doped GaAs

Y.-M. Xiong, C.C. Wong and T. Saitoh, Tokyo Univ. Agri. Tech., Japan 205(10) Structural Characterization of MBE Grown CuInSe2 Epitaxial Layers

Y. Okada, R. Shiota, S. Niki, A. Yamada, H. Oyanagi and Y. Makita, ETL, Japan .... 208

(11) C-V and EBIC Study of Direct Schottky Contacts to Quantum Wells Formed by In-SituSelective Electrochemical Process

T. Hashizume, H. Hasegawa* and N.-J. Wu*, Hokkaido Polytech. College, and*Hokkaido Univ., Japan 211

Symposium I: APCT'94 Optical Phenomena

(1) Measurement of Longitudinal Electric Field on Coplanar Transmission Lines by Electroop-tic SamplingT. Itatani, T. Nakagawa, K. Ohta, Y. Sugiyama and F. Kano*, ETL, and *Oyama Nat'l

College of Technol., Japan 214

(2) InP Based 2-Dimensional Photonic Band Structure—Fabrication by Anodization Method

and Design—

T. Baba and M. Koma, Yokohama Nat'l Univ., Japan 217

(3) Quantum-Confined Stark Shift Due to Piezoelectric Effect in InGaAs/GaAs QuantumWells Grown on (111) A GaAs

P. Vaccaro, K. Tominaga, M. Hosoda, K. Fujita and T. Watanabe, ATR, Japan 220

(4) Optical Gain Using the Three Band Model Taking into Account the Excitonic Effect

T. Uenoyama, Matsushita Central Res. Labs., Japan 223

Symposium I: APCT'94 Optical Devices

(1) First Fabrication of AlGaAs/GaAs Double-Heterostructure LED's Grown on GaAs(l 11)ASubstrates Using Only Silicon DopantT. Egawa, Y. Niwano, K. Fujita*, K. Nitatori*. T. Watanabe*, T. Jimbo and M. Umeno,

Nagoya Inst. Tech., and *ATR Optical and Radio Communications Res. Labs., Japan.. .226

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(2) Polarization-Dependent Emission from [112]-Oriented GaAs/(Al, Ga)As Quantum Wells:A Manifestation of Anisotropic Optical Matrix Elements

D. Sun, R. Henderson and E. Towe, Univ. Virginia, U.S.A 229(3) MSM Photodetectors and Modulators for Long Wavelength Applications: Optimization of

Solid Source MBE Growth of AIInAs/(Al)GaInAs-Heterostructures

T. Kummetz, M. Sickmoller, A. Fricke, D. Sowada, J. Mahnfi and W. Kowalsky, Univ.

Ulm, F.R.G 232(4) Material Characterization and Optimization for Ultra High Speed MSM-Photodetectors

W. Kowalsky and M. Sickmoller, Univ. Ulm, F.R.G 235

(5) Photoinduced Hole Tunneling in Resonant Tunneling Diodes

H.Y. Chu, P.W. Park, S.G. Han and E.H. Lee, Elec. Telecomm., Korea 238(6) The Study of Switch Characteristics of the Optical Absorption Bistability in Zn]_xMnxSe

(0.001 ^X

17:20 (13) Improved Latch-Up Characteristics of the LIGBT with the p-* Cathode Well on the SOISubstrate

B.H. Lee, CM. Yun, D.S. Byeon, M.K. Han and Y.I. Choi*, Seoul Nat'l Univ., and*Aiou Univ., Korea 289

17:40 (14) Numerical Prediction for 2GHz RF Amplifier of SOI Power MOSFETI. Omura and A. Nakagawa, Toshiba, Japan 292

Symposium II: SOI Technology

(1) An Investigation on the Short Channel Effect for 0.1/;m SOIMOSFET Using EquivalentOne Dimensional Model

R. Koh and H. Kato, NEC, Japan 295(2) Scaling Merits of Ultra Thin Film SOI/CMOSFET's for Low Power Dissipation

S. Warashina, O. Tsuboi, K. Sukegawa and N. Sato, Fujitsu, Japan 298(3) Two-Dimensional Analytical Modeling of the LDD Condition Influence on Short-Channel

Effects in SOI MOSFET's

H.-O. Joachim, Y. Yamaguchi, Y. Inoue and N. Tsubouchi, Mitsubishi, Japan 301(4) Characterization of a Complex Multilayer Structure on a Silicon-On-Insulator Wafer Using

Spectroscopic EllipsometryM.E. El-Ghazzawi and T. Saitoh, Tokyo Univ. Agri. Tech., Japan 304

(5) Intelligent Power IC with Partial SOI StructureH. Yamaguchi, H. Himi, S. Fujino and T. Hattori, Nippondenso, Japan 307

Symposium III: Single Electron Tunneling (14:00-17:50)

14:00 (1) Device Applications of the Single Charge Tunneling (Invited)D. Averin, State Univ. New York, U.S.A 311

14:30 (2) The Multiple-Tunnel Junction (MTJ) and its Application to Single-Electron Memory andLogic (Invited)K. Nakazato and H. Ahmed, Hitachi Cambridge Lab., U.K 313

15:00 (3) Thermally Enhanced Co-Tunneling of Single Electrons in a Si Quantum Dot at 4.2 KH. Matsuoka and S. Kimura, Hitachi, Japan 316

15:20 (4) Novel Si Resonant Tunneling DeviceK. Yuki, Y. Hirai, K. Morimoto, K. Inoue, M. Niwa and J. Yasui, Matsushita, Japan... 319

16:10 (5) Nanometer Scale MOSFETs and STM Patterning on Si (Invited)J.R. Tucker, C.L. Wang, J.W. Lyding, T.C. Shen and G.C. Abeln, Univ. Illinois,U.S.A 322

16:40 (6) Room-Temperature Single-Electron Devices (Invited)K. Yano, T. Ishii, T. Hashimoto, T. Kobayashi, F. Murai and K. Seki, Hitachi, Japan... 325

17:10 (7) Monte Carlo Study of Single-Electronic Devices

M. Kirihara, N. Kuwamura, K. Taniguchi and C. Hamaguchi, Osaka Univ., Japan 32817:30 (8) Tunnel-Junction-Load SET Logic

H. Fukui, M. Fujishima and K. Hoh, Univ. Tokyo, Japan 331

Symposium III: Single Electron Tunneling

(1) Dynamic Characteristics of Inverter Circuits Using Single Electron Transistors

N. Yoshikawa, H. Ishibashi and M. Sugahara, Yokohama Nat'l Univ., Japan 334

(2) Simulating the Motion of Single Electron Wave Packets through 'Mesoscopic' Devices

G. Fasol, Univ. Tokyo, Japan 337

Symposium IV: Neurodevices and Neurochips (13:50-18:10)

13:50 (1) Development of Neural Network Microelectronics in Europe (Invited)U. Ramacher, Technical Univ. Dresden, F.R.G 341

14:20 (2) Comparison between Optical and Electrical Implementation of Neural Networks (Invited)K. Kyuma, J. Ohta and Y. Arima, Mitsubishi, Japan 343

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14:50 (3) A Neuron-MOS Neural Network Using Low-Power Self-Learning-Compatible Synapse

Cells

T. Shibata, H. Kosaka, H. Ishii and T. Ohmi, Tohoku Univ., Japan 345

15:10 (4) KOHSIP - A Dedicated VLSI-Processor for Kohonen's Self-Organizing MapA. Konig, J. Reimers and M. Glesner, Darmstadt Univ. Tech., F.R.G 349

15:30 (5) A Standalone Hardware-Based Learning System

T.G. Clarkson and C.K. Ng*, King's College London, U.K., and *City Polytechnic of

Hong Kong, Hong Kong 352

16:10 (6) What Do We Learn from the Retina ? (Invited)

T. Yagi, Kyushu Inst. Technol., Japan 355

16:40 (7) Digital Implementation of Neural Networks: From Generic Chips to Specific Blocks

(Invited)M. Duranton, Laboratoire d'Electronique Philips, France 358

17:10 (8) Film Quality Dependence of Adaptive-Learning Processes in Neurodevices Using Ferroelec¬

tric PZT Films

E. Tokumitsu, R. Nakamura, K. Itani and H. Ishiwara, Tokyo Inst. Tech, Japan 36117:30 (9) New Approach to Hardware Implementation of Neural Circuits Using Superconductive

Devices

Y. Mizugaki, K. Nakajima, Y. Sawada and T. Yamashita, Tohoku Univ., Japan 364

17:50 (10) Different Approaches for Implementing Cellular Neural Networks with Adjustable

Template Coefficients

A. Paasio, K. Halonen and V. Porra, Helsinki Univ. Tech., Finland 367

Symposium IV: Neurodevices and Neurochips

(1) An Optical Adaptive Device and Its Application to a Competitive Learning CircuitK. Tsuji, H. Yonezu, K. Hosono, K. Shibao, N. Ohshima and K. Pak, Toyohashi Univ.

Technol., Japan 370

(2) Active Hollow Four Quadrant Orientation Detector Array for Applications to Pattern

RecognitionK.-C. Lin and S.-C. Lee, Nat'l Taiwan Univ., Taiwan, China 373

(3) Novel Pulse-Mode Neural Circuits Based on an AlGaAs-GaAs Multi-Quantum Well DiodeC. Song and K.P. Roenker*, Dong-A Univ., Korea, and *Univ. Cincinnati, U.S.A 376

(4) A Pulsating Neural NetworkH. Won, S. Sato, K. Nakajima and Y. Sawada, Tohoku Univ., Japan 379

(5) Hardware-Oriented Learning Algorithm Implemented on Silicon Using Neuron MOS

TechnologyH. Ishii, T. Shibata and T. Ohmi, Tohoku Univ., Japan 382

(6) Superior Generalization Capabilities of Neuron-MOS Neural Networks in Mirror-SymmetryProblem Learning

S. Kondo, T. Shibata and T. Ohmi, Tohoku Univ., Japan 385

(7) Parallel Implementations of Neural Networks Using the L-Neuro 2.0 ArchitectureC. Dejean and F. Caillaud, Philips, France 388

(8) The PHRASES Neuro-Coprocessor Cost Effective Handwriting Recognition for Personal

Digital Assistant

M. Hervieu and J.Y. Brunei, Philips, France 391

(9) ARAMYS-A Bit-Serial SIMD-Processor for Fast Parallel Nearest Neighbor Search andAssociative Processing

A. Koning, P. Windirsch and M. Glensner, Darmstadt Univ. Tech., F.R.G 394

MAIN HALL

A-0: Opening Session (9:10-12:25)

9:10 (0) Welcome Address

K. Tada, Organizing Committee Chairperson9:20 (1) Devices for the Future: A Peek into the Next Century (Invited)

H. Kroemer, Univ. California, U.S.A 397

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10:00 (2) Scope of Atom Technology Project—Toward "Self Organization"—(Invited)E. Maruyama, JRCAT, Japan 400

10:50 (3) Si LSI as a Post Si LSI (Invited)Y. Hayashi, Sony, Japan 403

11:30 (4) SOI Technology for VLSI (Invited)S.S. Iyer, SiBond, U.S.A 406

12:10 (5) SSDM Awards Presentation

Room A

A-l: Advanced Surface Engineering of Si (14:00-15:50)

14:00 (1) XPS Studies on Oxidation of Si (Invited)T. Hattori, Musashi Inst. Technol., Japan 410

14:30 (2) A New Insight into Atomic Scale Morphology of H-Terminated Si(100) Surfaces Studied byFT-IR-ATR and Scanning Probe MicroscopiesC.H. Bjorkman, M. Fukuda, T. Yamazaki, S. Miyazaki and M. Hirose, HiroshimaUniv., Japan 413

14:50 (3) Effects of H-Termination of Si(100) Surfaces on Electrical Characteristics of Metal/SiliconInterfaces

S. Zaima, J. Kojima, M. Hayashi, H. Ikeda, H. Iwano and Y. Yasuda, Nagoya Univ.,Japan 416

15:10 (4) The Importance of H202 Decomposition in Silicon Surface CleaningH.F. Schmidt, M. Meuris, P.W. Mertens, A.L.P. Rotondaro, M.M. Heyns, T.Q. Hurd*and Z. Hatcher**, IMEC, Belgium, *Texas Instruments, U.S.A. and **AshIand

Chemical, U.S.A 419

15:30 (5) An Inexpensive Diffusion Barrier Technology for Polycide Gate Electrodes with an SiN

Layer Formed with ECR Nitrogen PlasmaT. Hosoya, K. Machida, K. Imai and E. Arai, NTT, Japan 422

A-2: Advanced Cleaning Technology (16:10-17:50)

16:10 (1)

16:30 (2)

16:50 (3)

17:10 (4)

17:30 (5)

Metal Removal from a Silicon Surface by UV Irradiation in Pure Water

M. Kageyama, M. Miyashita and H. Kubota, Toshiba, Japan 425

Cleaning Technology and Analysis Technology for Hydrocarbon Contamination on SiWafer Surface

N. Yonekawa, S. Yasui and T. Ohmi, Tohoku Univ., Japan 428ESTM/AFM Observations on Si(lll) in Several Solutions

A. Ando*, K. Miki*, T. Shimizu*, K. Matsumoto*, Y. Morita** and H. Tokumoto*.**,

*ETL, and **NAIR, Japan 431

Quantum Chemical Investigation of Metal Adsorption Mechanism onto Silicon Surface in

Cleaning SolutionM. Miyashita, H. Kubota, Y. Matsushita, R. Yoshimura and T. Tada, Toshiba, Japan... 434

Effects of Dissolved Oxygen in HF Solution on Silicon Surface Morphology

H. Ogawa, K. Ishikawa, M.T. Suzuki, Y. Hayami and S. Fujimura, Fujitsu, Japan 437

Room B

Symposium M: APCT'94 Epitaxial Growth (14:00-15:50) 1-15

Symposium 1-2: APCT'94 Novel Processing Technologies (16:10-18:00) 16-30

Room C

C-l: Quantum Phenomena and Novel Devices I (14:00-15:50)

14:00 (1) Bloch Oscillations in Semiconductor Superlattices (Invited)

H.G. Roskos, C. Waschke, K. Victor and H. Kurz, Technische Hochschule Aachen,

F.R.G 440

xxin

14:30 (2) Current Oscillation with an InAs/AlSb Resonant-Tunneling Diode Measured at 77K

K. Yoh, H. Kawahara* and M. Inoue*, Hokkaido Univ., and *Osaka Inst. Tech., Japan.. .44314:50 (3) Large Electron Transfer and Strong Negative Differential Resistance in Strained InGaAs

Channel Real-Space Transfer Transistors

J.-T. Lai and J.Y.-M. Lee, Nat'l Tsing-Hua Univ., Taiwan, China 44715:10 (4) withdrawn

15:30 (5) Electron Wave Interference in the Terminal Region of Split-Gated Quantum Wire

Y. Ochiai, K. Yamamoto, T. Onishi*, M. Kawabe*, K. Ishibashi**, J.P. Bird**,Y. Aoyagi**, T. Sugano** and D.K. Ferry***, Chiba Univ., *Univ. Tsukuba, **Inst. of

Phys. & Chem. Res. and ***Arizona State Univ., Japan 451

C-2: Quantum Phenomena and Novel Devices II (16:10-18:00)

16:10 (1) Present Status and Future Prospects of Quantum-Structure Materials and Devices (Invited)H. Sakaki, Univ. Tokyo, Japan 455

16:40 (2) Characterization of Ballistic Transport in a Resonant-Tunneling Hot-Electron Transistor

Using Pulsed High Magnetic Fields up to 42 T

T. Strutz, T. Takamasu, N. Miura, K. Imamura* and L. Eaves**, Univ. Tokyo, *Fujitsu,

Japan and **Univ. Nottingham, UK 45717:00 (3) Hot Electron Ballistic Transport in n-AlGaAs/InGaAs/GaAs Small Four-Terminal Struc¬

tures

S. Sasaki, Y. Hirayama and S. Tarucha, NTT, Japan 461

17:20 (4) Analysis of the Switching Time of MOBILES (Monostable-Bistable Transition LogicElements) Based on Simple Model Calculation

K. Maezawa, NTT, Japan 46417:40 (5) Open-Base Multi-Emitter HBTs with Increased Logic Functions

K. Imamura, M. Takatsu, T. Mori, S. Muto and N. Yokoyama, Fujitsu Labs., Japan.. .467

Room D

Symposium III: Single Electron Tunneling (14:00-17:50) 311-333

Room A

A-3: Thin Film Transistors (9:10-10:30)

9:10 (1) Improvement of Poly-Si TFT Characteristics by Hydrogenation at Si02/Poly-Si Interfaces,Characterized by TDS Measurement of Deuterium Terminated Poly-Si

K. Hamada, S. Saito, K. Sera, F. Okumura, F. Uesugi and I. Nishiyama, NEC, Japan.. .4709:30 (2) Transport Properties in High Mobility Poly-Si TFTs

T. Serikawa, S. Shirai, K. Nakagawa*, S. Takaoka*, K. Oto*, K. Murase* andS. Ishida**, NTT, *Osaka Univ. and **Science Univ. of Tokyo, Japan 473

9:50 (3) High Performance Bottom Gate TFTs by Excimer Laser Crystallization and PostHydrogenation

D.P. Gosain, J. Westwater and S. Usui, Sony, Japan 47610:10 (4) Application of As-Deposited Poly-Crystalline Silicon Films to Low Temperature CMOS

Thin Film Transistors

M. Miyasaka, T. Komatsu, A. Shimodaira, I. Yudasaka and H. Ohshima, Seiko Epson,Japan 479

Symposium II: SOI Technology 295-309 Symposium III: Single Electron Tunneling 334-339

PA-3 SiGe and Porous Si

(1) Low Temperature and Facet-Free Epitaxial Silicon Growth by Contamination-RestrainedLoad-Lock LPCVD System

xxiv

M. Nakano, H. Kotaki, S. Kakimoto, K. Mitsuhashi and J. Takagi, Sharp, Japan 482(2) LEED Analysis on Initial Stages of Ge Growth on Si(l 1 l)(lxl)-As and As-Desorbed Si(l 11)

(lxl) SurfacesH. Yasuda, D. Abe, S. Hasegawa, K. Maehashi and H. Nakashima, Osaka Univ., Japan.. .485

(3) Room Temperature Photoluminescence of Er-Doped Porous Silicon at 1.54/miT. Kimura, A. Yokoi, H. Horiguchi, R. Ikeda, R. Saito and A. Sato*, Univ. Electro-Comm., and *Fujikura, Japan 488

(4) Study of Hole Thermal Emission from SiGe/Si Quantum Well by Deep Level Transient Spec¬troscopy and Admittance Spectroscopy

D. Gong, J. Jiang, Q. Wang, F. Lu, H. Sun, Y. Fan, X. Zhang and X. Wang, FudanUniv., China 491

PA-4 Si Devices

(1) A New Model for the Long Term Charge Loss in EPROMsA. Schenk and M. Herrmann, Swiss Federal Inst. Technol., Switzerland 494

(2) Dependence of Hot-Carrier Effect on Internal Stress in TiN/PoIy-Si Gate MOSFETT. Ishii, M. Miyamoto and K. Seki, Hitachi, Japan 497

(3) Electric Field Optimisation by Graded Low-Level Doping in Amorphous Silicon P-I-NDiodes

D. Fischer and A.V. Shah, Univ. Neuchatel, Switzerland 500

(4) Hot Carriers in Multi-Quantum-Well Heterostructures Ge/Gei_xSixV.I. Gavrilenko, I.N. Kozlov, O.A. Kuznetsov, M.D. Moldavskaya and V.V. Nikonorov,Russian Academy Sciences, Russia 503

(5) Impact of Source-Drain Extension Dose on Hot-Carrier Reliability in 0.1/rni nMOSFETsY. Takao, K. Watanabe and S. Kawamura, Fujitsu, Japan 506

(6) Mobility Improvement by Counter Doping and Its Reverse Short Channel Effect Associated

Channel-Length-Dependent DegradationE.P.V. Ploeg, H. Noda, K. Umeda, R. Nagai and S. Kimura, Hitachi, Japan 509

(7) Ultra Short and Narrow Channel Si MOSFETs with Advanced SEG Isolation Fabricated byUltra High Vacuum CVDA. Hori, T. Hirai and M. Tanaka, Matsushita, Japan 512

(8) Turn-Off Transient Analysis of a DMOS Device Considering Quasi-SaturationCM. Liu and J.B. Kuo, Nat'l Taiwan Univ., Taiwan, China 515

(9) New Scaling Scenario for Channel Hot Electron Type Flash EEPROMS. Ueno, H. Oda, N. Ajika, M. Inuishi and N. Tsubouchi, Mitsubishi, Japan 518

(10) Suppression of Leakage Current in Polysilicon NMOS Thin Film Transistors Using NH3Annealing

D.-S. Choi, G.-Y. Yang, C.-H. Han and C.-K. Kim, KAIST, Korea 521

(11) Successful Hydrogenation Using Furnace-Annealing for High Quality Poly-Si TFTs

M. Okamura, S. Shirai and T. Serikawa, NTT, Japan 524

(12) Very Low Temperature Deposition of Micro/Polycrystalline Si Films Made by HydrogenDilution with PE-CVD and ECR-CVD

K.C. Wang, Y.L. Jiang*, T.R. Yew and H.L. Hwang, Nat'l Tsing Hua Univ., and *Nat'l

Chung Hsing Univ., Taiwan 527

(13) 20% Reduction Both of Cell Area and of Mask Layers in Simplified TFT-SRAM Process

A. Kawamura, T. Tateyama, K. Nakamura, T. Wada, H. Ohki, A. Ishihama, K. Iguchiand K. Sakiyama, Sharp, Japan 529

(14) Computer Simulation and Measurement of Capacitance Voltage Characteristics from Quan¬tum Wire Devices of Trench-Oxide MOS Structure

T. Tsukui and S. Oda, Tokyo Inst. Tech., Japan 532

(15) DC Performance of a Tunnel MIS Emitter Auger Transistor

I.V. Grekhov, A.F. Shulekin and M.I. Vexler, A.F. Ioffe Phys.-Tech. Inst., Russia 535

A-4: Si Quantum Devices (14:00-15:40)

14:00 (1) Quantized Conductance of a Silicon Wire Fabricated Using SIMOX TechnologyY. Nakajima, Y. Takahashi, S. Horiguchi, K. Iwadate, H. Namatsu, K. Kurihara and

M. Tabe, NTT, Japan 538

XXV

14:20 (2) Quasi-One Dimensional Conduction in Polycrystalline Silicon Nano Wire

Y. Wada, M. Suga, T. Kure, Y. Sudou, T. Yoshimura, T. Kobayashi, Y. Gotou andS. Kondo, Hitachi, Japan 541

14:40 (3) Origin of Chaos in Thyristors

T. lrita, T. Tsujita, M. Fujishima and K. Hoh, Univ. Tokyo, Japan 54415:00 (4) Fabrication of Superconducting NbN Gate MOSFET for Hybrid Circuit Applications

N. Suzuki, K. Yamamoto, S. Matsumoto, I. Kurosawa*, M. Aoyagi* and S. Takada*,Keio Univ., and *ETL, Japan 547

15:20 (5) Low Temperature Impurity Diffusion in 6H-SiC Planar Quantum-Well P-N Junctions and

N-P-N Transistor Structures

N.T. Bagraev, L.E. Klyachkin and V.L. Sukhanov, Russian Academy Sciences, Russia.. .550

A-5: Oxide Reliability I (16:00-17:40)

16:00 (1) Local Dielectric Breakdown of Thin Silicon Oxide by Dense Contact Electrification

Y. Fukano, T. Uchihashi, T. Okusako, Y. Sugawara, Y. Yamanishi*, T. Oasa* andS. Morita, Hiroshima Univ., and *Sumitomo Metal Ind., Japan 553

16:20 (2) Study on the Fundamental Electrical Properties of Ultra-Thin Oxides Grown by Low

Temperature Microwave Plasma Afterglow Oxidation

P.C. Chen, K.Y.J. Hsu, J.Y. Lin* and H.L. Hwang, Nat'l Tsing Hua Univ., and *ChungCheng Inst. Tech., Taiwan, China 556

16:40 (3) A Consistent Model for Polarity Dependence of Threshold Voltage Shift in Fowler-Nor-

dheim Stressed CMOS Transistors

T. Brozek and C.R. Viswanathan, Univ. California, U.S.A 55917:00 (4) Common Origin of Stress-Induced Leakage Current and Electron Trap Generation

H. Satake and A. Toriumi, Toshiba, Japan 562

17:20 (5) New Experimental Findings on Stress Induced Leakage Current of Ultra Thin Silicon

Dioxides

K. Okada, S. Kawasaki and Y. Hirofuji, Matsushita, Japan 565

Room B

Symposium 1-3: APCT'94 Scanning Probe Technology I (9:10-10:40) 31-42

Symposium 1-4: APCT'94 Scanning Probe Technology II (11:00-12:30) 43-54

Symposium 1-5: APCT'94 Nanostructures I (14:00-15:40) 55-65

Symposium 1-6: APCT'94 Nanostructures II (16:00-17:50) 66-80

Room C

C-3: Growth (9:10-10:40)

9:10 (1) In Situ Mass Spectrometric Analysis of Surface Chemistry in MOMBE Growth (Invited)M. Sasaki and S. Yoshida, OTL, Japan 568

9:40 (2) Molecular Morphology and Electrical Conduction of Evaporated Vanadyl PhthalocyanineThin Films

K. Kojima, T. Kojima, A. Maeda, S. Ochiai, Y. Uchida, A. Ohashi and M. Ieda, Aichi In¬st. Tech., Japan 571

10:00 (3) Initial Stages of Cu Surfactant Growth on Sb-Adsorbed Diamond SurfacesM. Oshima, A. Menz, S. Heun, Y. Watanabe, F. Maeda, R. Klauser*, T.J. Chuang**,H. Kawarada***, and H. Kato****, NTT, Japan, *SRRC, **IAMS, Taiwan, China,***Waseda Univ. and ****KEK, Japan 574

10:20 (4) Surface Modification and Doping Effects of Sb on the Growth of CuInSe2 Films byMolecular Beam Deposition

B.-H. Tseng and G.-W. Chang, Nat'l Sun Yat-Sen Univ., Taiwan, China 577

C-4: Superconducting Devices and Materials (11:00-12:30)

11:00 (1) Superconducting Three Terminal Devices Using an InAs-Based Two-Dimensional ElectronGas (Invited)H. Takayanagi, T. Akazaki, J. Nitta and T. Enoki, NTT, Japan 580

XXVI

11:30 (2) Fabrication Process and Calculated Characteristics of ln/(Ba,Rb)Bi03/Sr(Ti, Nb)03Normal Conductor and Superconductor Base TransistorsT. Yamada, R. Kawasaki and H. Abe, Oki, Japan 583

11:50 (3) Anomalous Behavior of Resistivity and Mobility of La2_xSrxCu04 Bulk Material and FilmH. Gao, K. Uno, H. Kaneda, Y. Yoshikawa and M. Sugahara, Yokohama Nat'l Univ.,Japan 586

12:10 (4) Water-Immersion-Induced Surface Reactions in EuBa2Cu3Oy Thin FilmsT. Kiyokura, F. Maeda, Y. Watanabe, M. Oshima, H. Asano and M. Suzuki, NTT,Japan 589

C-5: Devices and Processing I (14:00-15:50)

14:00 (1) A Manufacturable High-Speed Low-Power Complementary GaAs Process (Invited)J.K. Abrokwah, J. Huang, W.J. Ooms, C. Shurboff, J.A. Hallmark, R. Lucero,J. Gilbert, B. Bernhardt and G.L. Hansell, Motorola, U.S.A 592

14:30 (2) A New Planar TMT Suitable for L-Band MMICs with RF Transmission and ReceptionBlocks Operating at Vdd ^ 2 VM. Sawada, E. Fujii, S. Matsushita, S. Terada, D. Inoue, H. Nakamoto and Y. Harada,Sanyo, Japan 595

14:50 (3) A Buried-Channel WNX/W Self-Aligned GaAs MESFET Process with Selectively-ImplantedChannel and Undoped Epitaxial Surface Layers for MMIC ApplicationsK. Nishihori, Y. Kitaura, M. Nagaoka, Y. Tanabe, M. Mihara, M. Yoshimura, M. Hiroseand N. Uchitomi, Toshiba, Japan 598

15:10 (4) Schottky Barrier Heights of InxAl, _xAs(0

10:10 (4) Current Drive Silicidation Technology for High Speed Field Programmable DevicesH. Suzuki, G.S. Jong, M. Hirayama and T. Ohmi, Tohoku Univ., Japan 631

Interconnection

(1) Selective Aluminum Chemical Vapor Deposition Using DMEAA

S.C. Sun, M.H. Tsai, H.T. Chiu and S.Y. Yang, Chiao Tung Univ., Taiwan, China ....634

(2) Resistance Anomaly of Al/CVD-W Interconnects in Deep Sub-Micron Width

M. Sekiguchi, T. Fujii, M. Yamanaka and M. Fukumoto, Matsushita, Japan 637

(3) TiN/TiSi2 Formation Using TiNx Layer and Its Feasibilities in ULSI

J.S. Byun, C.R. Kim, K.G. Rha, J.J. Kim and W.S. Kim, Goldstar, Korea 640

(4) Low Energy Bias Sputtering Filling of Si02 into High Aspect Ratio Trench Employing Axial-

ly Confined Helicon Wave Plasma

G. Sadakuni*, Y. Kobayashi, H. Shindo**, T. Fukazawa*, H. Sakaue*, S. Shingubara*and Y. Horiike, Toyo Univ., *Hiroshima Univ., and **Fukuyama Univ., Japan 643

(5) Al-Reflow Process with a "Cap-Clamp" for Sub-Micron Contact Holes

G.H. Choi, C.S. Park, I.S. Park, S.I. Lee, S.T. Ahn, Y.K. Kim* and R. Reynolds*,Samsung, Korea, and *Varian Associates, U.S.A 646

Dielectric Thin Films

(1) Ultra-Low-Temperature Growth of High-Integrity Thin Gate Oxide Films by Low-Energy

Ion-Assisted Oxidation

J. Watanabe, Y. Kawai, N. Konishi and T. Ohmi, Tohoku Univ., Japan 649

(2) Study of Single Layer Thermal Oxide as Inter-Poly Dielectric for Next Generation Flash

Memory

N. Shinmura, S. Sato, K. Hakozaki, K. Azuma, K. Iguchi and K. Sakiyama, Sharp,

Japan 652

(3) A Novel Approach for Leakage Current Reduction of LPCVD Ta205 Films by Rapid Ther¬

mal N20 AnnealingS.C. Sun and T.F. Chen, Chiao Tung Univ., Taiwan, China 655

Surface Engineering of Si

(1) Initial Stage of Oxidation of Hydrogen-Terminated Si(100)-2 x 1 Surface

T. Aiba, K. Yamauchi, Y. Shimizu, N. Tate*, M. Katayama* and T. Hattori, Musashi In¬

st. Tech., and *Shin-Etsu Handotai, Japan 658

(2) Mo Contamination in p/p+ Epitaxial Silicon Wafers

M. Aoki, T. Itakura and N. Sasaki, Fujitsu Labs., Japan 661

(3) Oxygen and Fluorine Treatment Effect on Silicon Surface Characterized by High-SensitivityInfrared Reflection Spectroscopy

M. Okuyama, M. Nishida and Y. Hamakawa, Osaka Univ., Japan 664

(4) Native Oxide Growth Rate of Si Surface with Various Flatness

T. Itoga, A. Hiraoka, F. Yano, J. Yugami and M. Ohkura, Hitachi, Japan 667

(5) Novel Dry Cleaning Using AHF-Alcohol with the New "Hot" Cluster Tool

F. Mieno, K. Suzuki, A. Shimizu, A. Tsukune, S. Sugawa, S. Kudoh, M. Nagase and

M. Kawano, Fujitsu, Japan 670

(6) Different Hydrogen Passivation Effects on Low-Temperature and High-Temperature Pro¬

cessed Poly-Si TFT's

Y.S. Kim, K.Y. Choi, S.K. Lee, Y.H. Kim* and M.K. Han, Seoul Nat'l Univ., and

*Suwon Univ., Korea 673*c

Fabrication

(1) High Rate Selective Etching of a-Si:H and Modification Effect of a-SiNx:H Surface by

Hydrogen RadicalH. Nagayoshi, M. Yamaguchi, M. Ikeda, Y. Yamamoto, K. Kamisako and Y. Tarui*,

Tokyo Univ. Agri. Tech., and *Waseda Univ., Japan 676

(2) Self-Align-Contact Etching with Inductive Coupled PlasmaM. Sato, T. Tohda, H. Kawano, D. Takehara, N. Takenaka, A. Ishihama and

K. Sakiyama, Sharp, Japan 679

xxviii

(3) Controlling Crystalline Orientations of Sol-Gel PZTs for FRAM and DRAM ApplicationsK. Aoki, Y. Fukuda, K. Numata and A. Nishimura, Texas Instruments Japan, Japan ... 682

(4) Suppression of Boron Penetration in pMOS by Using Oxide Gettering Effect in Poly-Si GateY.H. Lin, T.S. Chao*, C.L. Lee and T.F. Lei, Nat'l Chiao Tung Univ., and *Nat'l NanoDevice Lab., Taiwan, China 685

(5) A Novel LOCOS SPI (Self-Aligned-Pocket-Implantation) Technology for a Half MicronNMOSFET

C.J. Kim, H.W. Jang, Y.S. Jang, J.H. Jin, S.K. Lim and K.H. Choi, Samsung, Korea... 688

(6) Abrupt and Arbitrary Profile Formation in Silicon Using a Low-Kinetic-Energy Ion Bom¬bardment Process

W. Shindo, M. Hirayama and T. Ohmi, Tohoku Univ., Japan 691

(7) Quantum-Well Silicon p-n Junctions and n-p-n Transistor Structures

N.T. Bagraev, E.I. Chaikina, L.E. Klyachkin, A.M. Malyarenko and V.L. Sukhanov,Russian Academy Sciences, Russia 694

(8) Advanced Langmuir Probes for RF Discharge PlasmasM. Hirayama and T. Ohmi, Tohoku Univ., Japan 697

(9) Contactless Measurement of Surface Temperature and Surface Potential of Semiconductor

by Photoreflectance SpectroscopyA. Fujimoto, H. Katsumi*, M. Okuyama* and Y. Hamakawa*, Wakayama Nat'l Coll.

Technol., and *Osaka Univ., Japan 700

(10) Low Temperature CVD of High Quality Si02 Film Using Helicon Plasma Source

Y. Nishimoto, N. Tokumasu and K. Maeda, Semiconductor Process Lab., Japan 703

Symposium IV: Neurodevices and Neurochips (13:50-18:10) 341-369

Room A

A-6: Fabrication Process I (9:10-10:40)

9:10 (1) Micromachined Silicon-Based Analytical Microinstruments for Space Science and Planetary

Exploration (Invited)F.J. Grunthaner, R.E. Stalder, S. Boumsellek, T.R. Van Zandt, T.W. Kenny,

M.H. Hecht, A. Ksendzov, M.L. Homer, R.W. Terhune, A.L. Lane, M.A. Butler* and

A.J. Ricco*. JPL/CALTECH and *Sandia Nat'l Labs., U.S.A 706

9:40 (2) The Impact of Nitrogen Implantation into Highly Doped Polysilicon Gates for Highly

Reliable and High Performance Sub-Quarter Micron Dual Gate CMOS

M. Kobayashi, T. Kuroi, M. Shirahata, Y. Okumura, S. Kusunoki, M. Inuishi and

N. Tsubouchi, Mitsubishi, Japan 709

10:00 (3) Improved Pattern Profile Based on Analyzing between Substrate Surface and Chemically

Amplified Resist

S. Mori, K. Adachi, T. Sugihara, T. Fukushima and J. Takagi, Sharp, Japan 712

10:20 (4) Study of Initial Growth Mechanism in TEOS-03 Si02 Using ATR-FTIR

T. Yoshie, T. Usami, K. Shimokawa and K. Yoshimaru, Oki, Japan 715

A-7: Fabrication Process II (11:00-12:30)

11:00 (1) Pulse-Time Modulated Electron Cyclotron Resonance Plasma Dischargefor Precise ULSI

Patterning (Invited)S. Samukawa, NEC, Japan 718

11:30 (2) High Temperature Etching of PZT/Pt/TiN Structure by High Density ECR Plasma

S. Yokoyama, Y. Ito, K. Ishihara, K. Hamada, S. Ohnishi, J. Kudo and K. Sakiyama,

Sharp, Japan 721

11:50 (3) Real Time Monitoring of Surface Reactions during PlasmaEnhanced CVD of Silicon

S. Miyazaki, H. Shin, Y. Miyoshi and M. Hirose, Hiroshima Univ., Japan724

12:10 (4) Stability and Mobility of Surface Precursors for Reaction Gases in W-CVD

R. Irie, N. Kobayashi, J. Ushio, Y. Takemura and T. Maruizumi, Hitachi, Japan 727

xxix

A-8: Doping (14:00-15:40)

14:00 (1) Characterization of the Porous Boron o-Doped Si Superlattice

T.-C. Chang, M.-Y. Hsu, C.-Y. Chang, C.-P. Lee, T.-G. Jung, W.-C. Tsai,

G.-W. Huang and Y.J. Mei, Nat'l Chiao Tung Univ., Taiwan, China 73014:20 (2) Ultra-Shallow and Abrupt Boron Profiles in Si by the ri-Doping Technique

H. Kujirai, E. Murakami and S. Kimura, Hitachi, Japan 73314:40 (3) Enhanced Conductivity and Retarded Boron Diffusion in the As Preamorphized p+Poly-Si

Gate

S.J. Kwon, Y.H. Kim* and J.D. Lee**, Kyungwon Univ., *ETRI, and **Seoul Nat.

Univ., Korea 736

15:00 (4) Direct Observation of Vacancy Supersaturation in Retarded Diffusion of Boron in SiliconProbed by Monoenergetic Positron Beam

K. Osada, Y. Zaitsu, S. Matsumoto, S. Tanigawa*, A. Uedono*, M. Yoshida***

E. Arai** and T. Abe****, Keio Univ., *Tsukuba Univ., **NTT, ***Kyushu Inst, of

Design and ****Shin-Etsu Handotai, Japan 73915:20 (5) Reducing the Reverse-Bias Current in 450°C-Annealed n

'p Junction by Hydrogen Radical

Sintering

M.M. Oka, A. Nakada, K. Tomita, T. Shibata, T. Ohmi and T. Nitta*, Tohoku Univ.,and *Hitachi, Japan 742

A-9: SiGe and Porous Si (16:00-17:40)

16:00 (1) Photoluminescence of SiGe Quantum Wells Grown on SIMOX by Gas Source MBED.K. Nayak, N. Usami, S. Fukatsu and Y. Shiraki, Univ. Tokyo, Japan 745

16:20 (2) Photoluminescence from Silicon Quantum Well Formed on SIMOX SubstrateY. Takahashi, T. Furuta, T. Ishiyama and M. Tabe, NTT, Japan 748

16:40 (3) Relation between Photoconduction Effects and Luminescent Properties of Porous SiliconT. Ozaki, T. Oguro, H. Koyama and N. Koshida, Tokyo Univ. Agri. Tech., Japan 751

17:00 (4) Interface-Mixing in Ge Heteroepitaxy on Si(001):Microscopic MechanismH. Oyanagi, K. Sakamoto, R. Shioda and T. Sakamoto, ETL, Japan 754

17:20 (5) Initial Growth Stages of Si on Ge and Ge on Si for Atomic-Layer Epitaxy Control Using

SiH4 and GeH4 Gases

M. Sakuraba, J. Murota, T. Watanabe and Y. Sawada, Tohoku Univ., Japan 757

Room B

Symposium 1-7: APCT'94 Visible Light Source (9:10-10:40) 81-92

Symposium I: APCT'94 Epitaxial Growth 148-180

Symposium I: APCT'94 Fabrication and Characterization Technologies 181-213

Symposium I: APCT'94 Optical Phenomena 214-225

Symposium I: APCT'94 Optical Devices 226-252

B-l: Si Power Devices and Sensors (14:00-15:40)

14:00 (1) Injection Efficiency Enhancement in Dynamic Trench Gate Emitter (DTGE) for 4500 V

MOS Gate Transistor (IEGT)M. Kitagawa, A. Nakagawa and I. Omura, Toshiba, Japan 760

14:20 (2) Concave-DMOSFET: A New Super Low On-Resistance Power MOSFET

N. Tokura, T. Yamamoto, M. Kataoka, S. Takahashi and K. Hara, Nippondenso,

Japan 763

14:40 (3) A Low Loss Schottky Rectifier Utilizing the Trenched Side Wall as Junction Barrier Con¬

trolled Schottky ContactH.-S. Kim, S.-D. Kim, Y.-I. Choi* and M.-K. Han, Seoul Nat'l Univ. and *Aiou Univ.,

Korea 766

15:00 (4) Separated Drift Field Magnetotransistor with the p+ Ring around the EmitterU.-S. Kang, S.-K. Lee* and M.-K. Han, Seoul Nat'l Univ., and *Dankook Univ., Korea... 769

XXX

15:20 (5) Studies on the Process and Characteristics of 8 x 4cm2 Silicon Microstrip SensorsW.-C. Tsay, J.-W. Hong, A. Chen, W.T. Lin, H.-J. Ting*, S.-T. Chiang*, E. Chuang**and S.-W. Hwang**, Nat'l Central Univ., *Elec. Res. & Service Organization and**Episil Technol., Taiwan, China 772

Symposium 1-8: APCT'94 Beam-Induced Process (16:00-17:50) 93-107

Room C

C-7: High Dielectric Constant Thin Films (9:10-10:30)

9:10 (1) Formation and Characterization of Epitaxial Rutile Thin Films on Si SubstrateM.B. Lee, M. Kawasaki, M. Yoshimoto, H. Koinuma, B.K. Moon and H. Ishiwara,

Tokyo Inst. Tech., Japan 775

9:30 (2) withdrawn

9:50 (3) Charge Storage by Contact Electrification on Thin SrTi03 FilmT. Uchihashi, T. Okusako, T. Tsuyuguchi, Y. Sugawara, M. Igarashi*, R. Kaneko* and

S. Morita, Hiroshima Univ., and *NTT, Japan 778

10:10 (4) The Characterization of Defect States Responsible for Leakage Current in Tantalum Pentox-

ide Films for Very High Density DRAM ApplicationsW.S. Lau, T.S. Tan, N.P. Sandler* and B.S. Page*, Nat'l Univ. Singapore, Singapore,and *Lam Res. Corp., U.S.A 781

Electron and Quantum Devices

(1) Study of an Epitaxial Ferroelectric / Semiconductor / Insulator Structure Using Perovskite

Oxides for Application to the Field Effect Transistor

Y. Watanabe, Mitsubishi Kasei, Japan 784

(2) InAs Field-Effect Transistors with Platinum Schottky Gate

K. Yoh, H. Takeuchi, S. Izumiya* and M. Inoue*, Hokkaido Univ., and *Osaka Inst.

Tech., Japan 787

(3) InGaP/GaAs Heterojunction Bipolar Transistors (HBTs) with a Ultra-High Carbon-Doped

Base(p=1.5xl02lcm-3)

J. Shirakashi, T. Azuma, F. Fukuchi, M. Konagai and K. Takahashi, Tokyo Inst. Tech.,

Japan 790

(4) Numerical Simulation on the Device Structure of GaAs Floated Electron Channel Field

Effect Transistor (FECFET)

Y.-J. Lee, C.-T. Kim*, S.-C. Hong**, Y.-S. Kwon**, H.-K. Yoon and K.-H. Oh, Hyun¬

dai Electronics Ind., *Goldstar and **KAIST, Korea 793

(5) A New Negative-Differential-Resistance Resonant-Tunneling Switch with Delta-Doped

Quantum-Well Structure

W.-C. Liu, D.-F. Guo*, and L.-W. Laih, Nat'l Cheng Kung Univ. and *Private Kung-San

Inst. Tech. & Commerce, Taiwan, China 796

(6) Elastic Scattering and Depletion Effects on Current-Voltage Characteristics of Gated Reso¬

nant Tunneling Diodes

C. Lee, Hyundai Semiconductor, Korea 799

(7) Electron Transport Modeling of Electron Waveguides in Nonlinear Transport Regime

H. Tsuchiya and T. Miyoshi, Kobe Univ., Japan 802

(8) Emitter Size Effects in the Coupled-Quantum-Well Base Resonant TunnelingTransistor

H. Taniyama, M. Tomizawa and A. Yoshii, NTT, Japan 805

(9) The Study of the Distribution Function of Electrons by Ensemble Monte-CarloSimulation

of the Heterojunction Bipolar Transistor in Large Current Mode

S.M. Korshunov, A.A. Kulemin and V.E. Sorokoumov, Moscow Inst. Phys. & Technol.,

Russia 809

xxxi

Growth and Processing

(1) Hydrogenation Effects in Hg,_xCdxTe Layers Grown on p-CdTe(211)B Substrates byMolecular Beam EpitaxyM.D. Kim, M.S. Han, T.W. Kang, J.M. Kim*, H.K. Kim*, Y.T. Jeoung*, T.W. Kim**and J.B. Choi***, Dongguk Univ., *Agency Defence Development, **Kwangwoon Univ.and ***Chungbuk Nat'l Univ., Korea gjj

(2) Ion-Beam Sputter Etching and Deposition with Carbondioxide

B. Kempf, H.W. Dinges and H. Burkhard, Deutsche Bundespost Telekom, F.R.G 815(3) Sulfur-Treatment and Hydrogenation Effects in GaAs

Y.T. Oh, C.G. Chung, G.S. Eom, T.W. Kang, C.Y. Hong, S.B. Park* and T.W. Kim**,Dongguk Univ., *Taegu Univ. and **Kwangwun Univ., Korea §17

(4) Photo-Acoustic Sensitivity of Hematite Single CrystalsV. Preobrazhensky and A. Kiselev, Moscow Inst. Radio Eng., Russia 820

(5) Effect of Magnetoelastic Interaction on Magnetostatic Mode Spectrum in Thick FerriteFilms with Nonpinned Surface SpinsA.S. Bugaev and V.B. Gorsky, Moscow Inst. Phys. & Technol., Russia 823

Superconductors and Others

(1) Fabrication and Characteristics of High-Tc Superconducting Flux Flow Transistors with

High Transresistances

Z. Wen and H. Abe, Oki, Japan 826

(2) Quasiparticle Characteristics and Noise Properties of Superconductor-Normal Metal-

Superconductor Quantum Well Devices

A. Takada, T. Ikuta*, A. Tachibana*, T. Fukumoto*, M. Hatle* and K. Hamasaki*,

Hakodate Nat'l Coll. Technol., and *Nagaoka Univ. Technol., Japan 829

(3) Optical and Magneto-Optical Studies of Anomalous Anisotropy of the Cd, -xMnxTe CrystalL.-Y. Chen, S.-M. Zhou, H.-Z. Ma, Y. Su, Y.-H. Qian, C.-J. Chen* and X.-Z. Wang*,Fudan Univ., and *Peking Univ., China 832

(4) Photoluminescence and Raman Scattering of Porous GaP

A.N. Obraztsov, V.A. Karavanskii* and V.Y. Timoshenko, Moscow State Univ., and

Russian Academy of Sciences, Russia 835

Symposium IV: Neurodevices and Neurochips 370-396

C-8: Oxide Reliability II (14:00-15:50)

14:00 (1) New Spectroscopic Method for Determination of Energy Distribution of Interface States for

MOS Devices with Ultra-Thin Oxide LayersH. Kobayashi, Y. Yamashita, T. Mori, Y. Nakato, K.H. Park* and Y. Nishioka*, Osaka

Univ., and *Texas Instruments Japan, Japan 838

14:20 (2) Structural Inhomogeneity of Thermally Grown Si02 Films Evaluated with Transmission

Infrared SpectroscopyN. Yasuda and A. Toriumi, Toshiba, Japan 841

14:40 (3) Relationship between Water Diffusivity of Dielectric Films and Accelerated Hot Carrier

Degradation Caused by WaterK. Fukuda, T. Nakano, M. Fujishima, N. Mura, K. Tokunaga, A. Tuzumitani and

S. Ichinose, Kawasaki Steel, Japan 844

15:00 (4) Device-Quality SiO2/Si(100) and Si02/Si(ll 1) Interfaces Formed by Plasma-Assisted Oxida¬

tion and Deposition Processes (Invited)T. Yasuda, Y. Ma and G. Lucovsky, North Carolina State Univ., U.S.A 847

15:30 (5) Contribution of Si/Si02 Interface Roughness in the Observation of Chemical Structure

K. Ishikawa, H. Ogawa, C. Inomata and S. Fujimura, Fujitsu, Japan 850

xxx ii

C-9: Oxide Reliability III (16:10-17:50)

16:10 (1) Relationship between Nitrogen Profile and Reliability of Heavily Oxynitrided Tunnel OxideFilms for Flash EEPROMs

T. Arakawa, T. Hayashi, M. Ohno, R. Matsumoto, A. Uchiyama and H. Fukuda*, Oki,and *Muroran Inst. Technol., Japan 853

16:30 (2) Highly Reliable Silicon Nitride Films Made by Jet Vapor DepositionX. Wang, T.P. Ma, G.-J. Cui*, T. Tamagawa*, J.W. Golz*, S. Karecki*, B.L. Halpern*and J.J. Schmitt*, Yale Univ., and *Jet Process Corp., U.S.A 856

16:50 (3) Highly Reliable N20-Oxynitrided Tunnel Oxides for Flash MemoryM. Ushiyama, M. Kato, T. Adachi, H. Kume, N. Miyamoto*, T. Mine, K. Ogata,T. Nishida and Y. Ohji, Hitachi, and *Hitachi Device Eng., Japan 859

17:10 (4) Nitridation of Si02 in NO Ambient for Ultrathin Oxynitride Dielectric Formation

M. Bhat, J. Kim, J. Yan, G.W. Yoon, L.K. Han and D.L. Kwong, Univ. Texas, U.S.A.... 862

17:30 (5) High Quality ONO Gate Dielectrics Fabricated by In-Situ RTCVD

G.W. Yoon, J. Yan, L.K. Han, J. Kim and D.L. Kwong, Univ. Texas, U.S.A 865

Room D

D-2: Si Hetero Devices (9:10-10:50)

9:10 (1) Silicon Based HBT: Comparison of Concepts (Invited)

E. Kasper, Univ. Stuttgart, F.R.G 868

9:40 (2) Silicon: Germanium Heterojunction Bipolar Transistors; From Experiment to Technology

(Invited)B.S. Meyerson, D.L. Harame, M.M. Gilbert, K.T. Schonenberg, T.Tice* and B. Scharf*,

IBM and *Analog Devices Inc., U.S.A 871

10:10 (3) Thermal Runaway Tolerance in Double Heterojunction Bipolar Transistors

O. Hidaka, K. Morizuka and H. Mochizuki, Toshiba, Japan 874

10:30 (4) Modelling and Fabrication of a P-Channel SiGe-MOSFET with Very High Mobility and

Transconductance

T. Vogelsang, F. Hofmann, H. Schafer, L. Risch and K. Hofmann*, Siemens, and *Univ.

Hannover, F.R.G 877

Symposium II: SOI Technology (11:10-18:00) 253-294

August 26, Friday

Room A

A-10: O.lfim MOSFETs (9:10-10:40)

9:10 (1) High Performance 0.1 ftm CMOS Devices (Invited)

K.F. Lee and R.H. Yan, AT&T, U.S.A 880

9:40 (2) Universality of Impact Ionization Rate in 0.1//m Si MOSFET

H. Kurata, Y. Nara and T. Sugii, Fujitsu Labs., Japan 883

10:00 (3) Hot Carrier Effects in Sub-0.1 ftm MOSFETs

F. Balestra, T. Matsumoto*, T. Shimatani*, M. Tsuno, H. Nakabayashi and

M. Koyanagi*, Hiroshima Univ., and *Tohoku Univ., Japan 886

10:20 (4) Kink Effect in 0.1 ftm Bulk Si MOSFETs

T. Matsumoto, F. Balestra*, T. Shimatani, M. Tsuno*, H. Nakabayashi* and

M. Koyanagi, Tohoku Univ., and *Hiroshima Univ., Japan 889

A-ll: Hot Carrier Reliability (11:00-12:20)

11:00 (1) Analytical Calculation of the Subthreshold Slope Increasein Short Channel MOSFET's by

Taking the Drift Component into Account

S. Biesemans and K.De Meyer, IMEC, Belgium 892

xxxm

11:20 (2) Different Contribution of Interface States and Substrate Impurities to Coulomb Scatteringin Si MOS Inversion Layer

J. Koga, S. Takagi and A. Toriumi, Toshiba, Japan 89511:40 (3) A New PMOSFET's Hot-Carrier Degradation Model for Bi-Directional Operation

S. Shimizu, M. Tanizawa, S. Kusunoki, M. Inuishi and N. Tsubouchi, Mitsubishi,Japan 898

12:00 (4) Two-Dimensional Analysis of Interface State Induced Performance Degradation in LDD

MOSFET's

T. Wang, C. Huang* and T.E. Chang, Nat'l Chiao Tung Univ. and *Macronix Interna¬

tional Co., Taiwan, China 901

A-12: Memory Devices (14:00-15:40)

14:00 (1) Analysis of Isolation Degradation Induced by Interlayer Material in Capacitor Over Bit-

Line (COB) DRAM Cell

H. Mori, K. Shibahara, K. Koyama and N. Kodama, NEC, Japan 904

14:20 (2) A 0.4/rni Gate-Ail-Around TFT (GAT) Using a Dummy Nitride Pattern for High DensityMemories

S. Maegawa, T. Ipposhi, S. Maeda, H. Nishimura*, O. Tanina, H. Kuriyama, Y. Inoue

and N. Tsubouchi, Mitsubishi, and *Ryoden Semiconductor System Eng., Japan 907

14:40 (3) A Novel Source-Side Injection Split-Gate Flash Cell Technology for High Density Low

Voltage ApplicationsY. Yamauchi, M. Yoshimi, K. Omori, S. Nitta, N. Mizukoshi and K. Suzuki, Sharp,

Japan 910

15:00 (4) 256 Mbit High Density CMOS Non Volatile Memories Field Isolation by Using High

Temperature Poly Buffer LOCOS(HTPBL)S. Deleonibus, P. Spinelli, F. Vinet, M. Heitzmann, G. Guegan and C. Leroux, Leti,France 913

15:20 (5) Highly Reliable Antifuse with TiSix/p-SiN/TiN Structure for 3.3 V Operated High SpeedFPGA Application

Y. Tamura, H. Shinriki and T. Ohta, Kawasaki Steel, Japan 916

Room B

Symposium 1-9: APCT'94 Characterization I (9:10-10:50) 108-122

Symposium MO: APCT'94 Optical Devices I (11:10-12:40) 123-132

Symposium Ml: APCT'94 Optical Devices II (14:00-15:50) 133-147

Room C

C-10: Interconnect Technology I (9:10-10:30)

9:10 (1) Electromigration Resistance Measurements of Multilayered Interconnections by Short Test

Lines

S. Fukada, M. Hirasawa and M. Suzuki*, Hitachi, and *Semiconductor and Integrated

Circuit Division, Hitachi, Ltd., Japan 919

9:30 (2) Resistance Oscillations Induced by a Direct Current ElectromigrationK. Fujiki, A. Sano, K. Inoue, H. Sakaue, S. Shigubara and Y. Horiike*, Hiroshima Univ.

and *Toyo Univ., Japan 922

9:50 (3) Studies of Corrosive Outgasses from Via Holes Using Thermal Desorption SpectroscopyS. Tokitoh, H. Uchida, H. Uchida, Y. Okuno, K. Fushimi, G. Liu, Y. Sakaya and

N. Hirashita, Oki, Japan 925

10:10 (4) High Temperature Void Formation Induced by H20 in Al Interconnection with SiN/PSGPassivation

T. Ueda, S. Ueda, K. Yano and N. Nomura, Matsushita, Japan 928

xxxiv

C-ll: Interconnect Technology II (10:50-12:30)

10:50 (1) Ion-Assisted Low-Temperature Surface Reflow of BPSG for Highly-Reliable ContactMetallization

O. Tatsumi, K. Ino, N. Konishi, Y. Kawai and T. Ohmi, Tohoku Univ., Japan 93111:10 (2) Ammonium Salt Added Silica Slurry for Chemical Mechanical Polishing (CMP) of In-

terlayer Dielectric Film

Y. Hayashi, M. Sakurai, T. Nakajima, K. Hayashi, S. Sasaki, S. Chikaki and T. Kunio,NEC, Japan 934

11:30 (3) Formation of Copper Interconnects by Reflow of Sputtered Copper FilmsK. Abe, Y. Harada, K. Hashimoto and H. Onoda, Oki, Japan 937

11:50 (4) Characteristics of the Oxidation Barrier Layers for Copper MetallizationK.-I. Lee, K.-I. Min*, S.-K. Joo*, K.-G. Rha and W.-S. Kim, Goldstar, and *Seoul Nat'lUniv., Korea 940

12:10 (5) High Reliability Copper Interconnects through Dry Etching ProcessY. Igarashi, T. Yamanobe and T. Ito, Oki, Japan 943

C-12: Interconnect Technology III (14:00-15:40)

14:00 (1) Selective CVD-A1 Contact Plug on Rapid Thermal Processed TiSi2 in NH3 for High SpeedCMOS Using Salicide Process

H. Shinriki, T. Komiya, N. Takeyasu and T. Ohta, Kawasaki Steel, Japan 94614:20 (2) Al Growth on Si(lll)(V3~x-/3)-Ga Surfaces at Room Temperature

K. Maehashi, H. Katsuki and H. Nakashima, Osaka Univ., Japan 949

14:40 (3) Interface Reactions in Al-Alloy/Ti Layered StructuresT. Narita, K. Hashimoto, Y. Harada and H. Onoda, Oki, Japan 952

15:00 (4) Solid-Phase Reactions in Al Alloy/TiN/Ti/Si Systems Observed by In-Situ Cross-SectionalTEM

S. Sobue, S. Mukainakano, Y. Ueno and T. Hattori, Nippondenso, Japan 95515:20 (5) Suppression of AI/W Reaction in Al/W Layered Interconnects by W Surface Treatment

before Al DepositionY. Harada, Y. Itoh and H. Onoda, Oki, Japan 958

Room D

LD: Late News (9:10-12:30)

(1) High Coupled Power 0.98 ftm Narrow Beam Lasers

A. Shima, T. Kamizato, A. Takemoto, S. Karakida, Y. Nagai, Y. Yoshida and E. Omura,

Mitsubishi, Japan 961

(2) Photovoltaic Pb,_xSnxSe-on-Si IR-Sensor Arrays for Thermal Imaging

H. Zogg, A. Fach, J. John, J. Masek, P. Muller and C. Paglino, AFIF, Switzerland... .963

(3) Fabrication and Evaluation of Three-Dimensional Optically-Coupled Common Memory

K. Miyake, T. Namba, K. Hashimoto, H. Sakaue*, S. Miyazaki*, Y. Horiike**, S.

Yokoyama, M. Koyanagi*** and M. Hirose, Hiroshima Univ., *Toyo Univ and

**Tohoku Univ., Japan 965

(4) Highly Conductive p-type ZnSe Formation Using Li3N Diffusion

S.W. Lim, T. Honda, K. Yanashima, K. Inoue, H. Munekata, H. Kukimoto, F. Koyama

and K. Iga, Tokyo Inst. Tech., Japan 967

(5) MOVPE Growth of Beryllium Doped Inp Using Bismethylcyclopentadienyl-Beryllium

T. Kimura, T. Ishida, T. Sonoda, S. Takamiya and S. Mitsui, Mitsubishi, Japan 969

(6) A Novel Wire Transistor Structure with In-Plane Gate Using Direct Schottky Contacts to

2DEG

H. Okada, K. Jinushi, N.-J. Wu, T. Hashizume and H. Hasegawa, Hokkaido Univ.,

Japan 971

(7) InAs Field-Effect Transistors with a Deep Quantum Well Structure

S. Miya, N. Kuze, K. Nagase, A. Ichii, Y. Toyama, M. Ozaki and I. Shibasaki, Asahi

Chemial Ind. Co., Ltd., Japan 973

xxxv

E

(8) Sub-Micron Vertical AlGaAs/GaAs Resonant Tunneling Single Electron Transistor

D.G. Austing, T. Honda and S. Tarucha, NTT, Japan 975(9) Multiple Negative Transconductances in an Indented Gate AlGaAs/GaAs Modulation

Doped Field Effect Transistor

K.W. Park, S. Lee, M. Shin, E.-H. Lee and H.C. Kwon*, Elec. Telecom. Res. Inst, and

Korea Res. Inst. Standards & Sci., Korea 977

(10) Monostable-Bistable Transition Logic elements (MOBILEs) Based on Monolithic Integra¬tion of Resonant Tunneling Di mode and FET

K.J. Chen, T. Akeyoshi and K. Maezawa, NTT, Japan 979

(11) Effects of Grown-in Hydrogen on Electrical Properties of Czochralski Silicon CrystalsA. Hara, M. Koizuka, H. Yamada-Kaneta and H. Mori, Fujitsu, Japan 981

(12) Oxygen Precipitate Density Control in CZ-Si Wafers by Hydrogen Annealing ProcessK. Izunome, H. Shirai, K. Kashima, J. Yoshikawa and A. Hojo, Toshiba Ceramics,Japan 983

(13) Element Specific Diagnosis Using //-PCDL. Koster, P. Blochl and L. Fabry, Wacker, F.R.G 985

(14) Photovoltaic Investigations of Interband Transitions in SiGe/Si Multiple Quantum WellsJ.-B. Wang, F. Lu, H.-H. Sun, D.-W. Gong and X. Wang, Fudan University, China .. .987

(15) A Novel Trench Capping Process Using CMP with Endpoint Detection

H. Inokawa, M. Miyake, S. Nakayama and T. Kobayashi, NTT, Japan 989

(16) High Speed Fully Depleted CMOS/SIMOX Gate ArrayX. Zhang, L. Wei, Y. Li and Y. Wang, Peking Univ., China 991

(17) Low-Temperature Drain Current Characteristics in Sub-10-min-Thick SOI nMOSFET's onSIMOX Substrates

Y. Omura and M. Nagase, NTT, Japan 993

(18) ON-Current Stability of Poly-Si Thin Film Transistor with Si-rich Oxide as IntermetalDielectric Film after Nega tive Bias Temperature Stress

G.-S. Choi, J.-H. Choi, Y.-J. Lee, J.-W. Nam, S.-R. Ma, K.-S. Chang, J.-S. Yoon andH.-K. Yoon, Hyundai Elec, Korea 995

(19) A Novel Lateral IGBT Structure with Improving the Dynamic Latch-up PerformancesH. Sumida and A. Hirabayashi, Fuji Elec. R&D, Japan 997

(20) A Novel Fabrication Method for Short Channel MOSFET's Using Self-AlignedUltrashallow Junction Formation by Selective Si|_xGex CVD

K. Goto, J. Murota, F. Honma, T. Matsuura and Y. Sawada, Tohoku Univ., Japan 999

xxxvi