SS12 THRU SS120 - hdiodecom.s506.000pc.nethdiodecom.s506.000pc.net/down/SS12-SS120(J).pdf · SS 14...

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SMAJ Plastic-Encapsulate Diodes HD AJ 28-32 Features I o 1A VRRM High surge current capability Applications Rectifier : From 2 To 20 X Marking Polarity: Color band denotes cathode SS1X 1 High Diode Semiconductor SMAJ SS12 THRU SS120 Schottky Rectifier 20V-200V Item Symbol Unit Test Conditions SS 12 SS 13 SS 14 SS 15 SS 16 SS 18 SS 110 SS 115 SS 120 Repetitive Peak Reverse Voltage VRRM V 20 30 40 50 60 80 100 150 200 Average Forward Current IF(AV) A 60HZ Half-sine wave, Resistance load, TL(Fig.1) 1.0 Surge(Non-repetitive)Forward Current IFSM A 60Hz Half-sine wave ,1 cycle , Ta =25 30 Junction Temperature TJ -55~+125 -55~+150 Storage Temperature TSTG -55 ~ +150 Electrical Characteristics (T a =25Unless otherwise specified Item Symbol Unit Test Condition SS 12 SS 13 SS 14 SS 15 SS 16 SS 18 SS 110 SS 115 SS 120 Peak Forward Voltage V F V I F =1.0A 0.55 0.70 0.85 0.95 Peak Reverse Current I RRM1 mA VRM=VRRM T a =25 0.5 0.2 I RRM2 T a =100 10 5.0 Thermal Resistance(Typical) R θJ-A /W Between junction and ambient 88 1) R θJ-L Between junction and terminal 28 1) Notes: Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas Maximum RMS Vo V RMS V 14 21 28 35 42 56 70 ltage 105 140 Maximum DC blocking Voltage V V DC 20 30 40 50 60 80 100 150 200 Typical junction capactiance Measured at 1.0MHz and applied reverse voltage of 4.0 volts. CJ pF 110 60

Transcript of SS12 THRU SS120 - hdiodecom.s506.000pc.nethdiodecom.s506.000pc.net/down/SS12-SS120(J).pdf · SS 14...

SMAJ Plastic-Encapsulate Diodes

HD AJ 28-32

Features

●Io 1A

●VRRM

●High surge current capability

Applications ● Rectifier

● : From 2 To 20X

Marking

Polarity: Color band denotes cathode●

SS1X

1

H igh Diode Semiconductor

SMAJ

SS12 THRU SS120

Schottky Rectifier

20V-200V

Item

Symbol

Unit

Test Conditions

SS

12

SS

13

SS

14

SS

15

SS

16

SS

18

SS

110

SS

115

SS

120

Repetitive Peak Reverse Voltage VRRM V 20 30 40 50 60 80 100 150 200

Average Forward Current IF(AV) A

60HZ Half-sine wave, Resistance load, TL(Fig.1)

1.0

Surge(Non-repetitive)Forward Current

IFSM A

60Hz Half-sine wave ,1 cycle , Ta =25℃

30

Junction Temperature TJ ℃ -55~+125 -55~+150

Storage Temperature TSTG ℃ -55 ~ +150

Electrical Characteristics (Ta=25℃ Unless otherwise specified)

Item

Symbol

Unit

Test Condition

SS

12

SS

13

SS

14

SS

15

SS

16

SS

18

SS

110

SS

115

SS

120

Peak Forward Voltage VF V IF =1.0A 0.55 0.70 0.85 0.95

Peak Reverse Current

IRRM1 mA VRM=VRRM

Ta =25℃ 0.5 0.2

IRRM2 Ta =100℃ 10 5.0

Thermal Resistance(Typical)

RθJ-A

/W℃

Between junction and ambient

881)

RθJ-L

Between junction and terminal 28

1)

Notes: Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper

pad areas

Maximum RMS Vo V RMS V 14 21 28 35 42 56 70ltage 105 140

Maximum DC blocking Voltage V V DC 20 30 40 50 60 80 100 150 200

Typical junction capactiance

Measured at 1.0MHz and applied reverse voltage of 4.0 volts.

CJ pF 110 60

Typical Characteristics

2 H igh Diode Semiconductor

0 50 150

FIG.1: FORWARD CURRENT DERATING CURVE

IO(A

)

Resistive or Inductive LoadP.C.B. Mounted on 0.2"×0.2"(5.0mm×5.0mm)Copper Pad Areas

TL(℃)100

0.2

0.4

0.6

0.8

1.0

0

25 75 125

SS12 -SS14

SS15 -SS120

IF(A

)

FIG.3: TYPICAL FORWARD CHARACTERISTICS

0.01

VF(V)

0.4

TJ=25℃Pulse width=300us1% Duty Cycle

0.1

1.0

10

100

0.6 0.8 1.0 1.2 1.4

SS12 -SS14SS15 -SS16SS18 -SS110SS115 -SS120

0.20

FIG.4:TYPICAL REVERSE CHARACTERISTICS

Voltage(%)

IR(m

A)

0 20 40 60 80 1000.001

Tj=25℃

Tj=75℃

100

10

1.0

0.1

0.01

Tj=125℃

1

0

IFS

M(A

)2 5 10 20 50 100

FIG2:Surge Forward Current Capadility

Number of Cycles

10

20

30

40

50

SS12 - SS16

SS18 -SS120���������������������������������������������������������������������������������������������� ����� ������� ����)�������� ��������1% ��������� MBN���DFIG5:Typical J uction Capactiance P er Diode

SS12-SS16SS18-SS120

3

JSHDJSHD

H igh Diode Semiconductor

SMAJ

SMAJ

Dimensions in inches and (millimeters)

0.177(4.50)0.157(3.99)

0.110(2.80)0.098(2.50)

0.060(1.52)0.030(0.76)

0.222(5.66)0.194(4.93)

0.012(0.305)0.006(0.152)

0.008(0.203)MAX.

0.096(2.42)0.078(1.98)

0.067 (1.70)

0.047 (1.20)

4.12

2.0

1.8

4

H igh Diode Semiconductor

Reel Taping Specifications For Surface Mount Dev ices- SMA