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Spectrum Slicer MEMS for RF Oscillators & Filters David Giles & Curtis Mayberry December 7 th, 2012

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2 Some Motivation Oscillators On-chip integration High frequencies Bandpass Filters Many different filters, small area Narrow passbands (High Q) Good for channel select Applications RF Receivers (e.g. cellphones) Cognitive Radio (spectrum hopping)

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3 Piezoelectric Contour-Mode Resonator Frequency range: 19 to 656 MHz Qs of around 4000 Motional resistance: 50 to 700 Lithographically defined center frequencies Width vs. length- extensional modes [Piazza, et al. 2006]

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4 Laterally-Excited SiBAR Motional resistance of 35 100 MHz center frequency Aluminum nitride now sputtered on sidewall Use of d 33 coefficient [Tabrizian, et al. 2011]

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5 Bandpass Filter Capacitive coupling by intrinsic capacitances [Zuo, et al. 2010]

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6 Broadband Tunable TIA for Oscillators Low-power broadband current preamp 76 dB constant gain up to 1.7 GHz Demonstrated operation with 1 GHz, 750 , and a 724 MHz, 150 resonators

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7 High Level System Diagram

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8 MEMS Challenges Balancing greater thickness versus a distorted modeshape to maximize electromechanical coupling Achieving low motional impedance Designing an effective model Learning COMSOL

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9 Electroded Layers The two pictures below show the two layers of Molybdenum electrodes and overall structure of the device

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10 1 GHz Resonator Q of 10,000 (1/3 of the theoretical maximum for Silicon) was assumed One-port admittance simulated for half- resonator Simulated only half of the device for faster results (while maintaining accuracy) Dimensions Height = 2um Length = 20um Width = 3.9um (counting AlN)

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11 RLC Extraction 1 GHz Resonator f o = 986.5 MHz R = 1 V / Total Current = 1 / 3.7mA = 267.3 L = Q*R/ (2**f o ) = 431.2uH C = 1 / (L*(2**f o )2 = 60.36aF C ft = eo*er*A/d = 10*8.854e-12*(2e-6*20e-6*2 + 20e-6*3.9e-6) / 1e-6 = 14fF

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12 100 MHz Resonator Design 98.14601 MHz length extensional mode Dimensions: W = 40um L = 400um H = 20um T AlN = 2um L =11mH R =1.1k C m =254.7aF C ftt =2.2pF

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13 Bandpass Filter Theory

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14 Simulated Bandpass Filter 2 nd order BPF LCs as given for the 1 GHz resonator Ccap = 30fF, Rterm = 250 3dB bandwidth = 1 MHz 20dB SF = 3 Passband Ripple = 0.3 dB IL = 2dB

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15 Biasing: Current source Supply insensitive due to cascode Provides 3v dc bias to TIA. Provides 15uA current bias that is used to generate voltage bias

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16 Input Stage Current amplifier + current to voltage conversion

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17 Trans-impedance Amplifier Current mirror amplifier: 1:10 current amplification Common source second stage with feedback Shunt-shunt feedback to increase bandwidth Total phase shift = 0as required

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18 TIA Open Loop Response 76.47 dB peak transimpedance gain 115 MHz 3dB bandwidth

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19 100 MHz Loop Gain

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20 20 MHz Loop Gain

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21 20 MHz Oscillation (Transient Simulation)

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22 Packaging Multi-chip-module Easily integrated with other RF dies (LNA, PA, etc.) MEMs and interface dies will be bonded to MCM directly As more components are designed and integrated on one die, other solutions may become more notable Can be integrated with existing technology

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23 Ladder Filter Design Reciprocal Mixing Filter SpecificationsValueAyazi [11] Bannon [25] Raditek [26] Center Frequency996.5 MHz 600 kHz7.81 MHz1220 MHz Filter Order22-- 3dB Bandwidth (kHz)1,0611.2 kHz18 kHz8 MHz 20dB Shape Factor33.32.31- 40dB Shape Factor-10.4-- Insertion Loss (dB)20.21.83.5 Passband Ripple (dB)0.3-1.50.4 Motional Impedance (Ohms) 50--- Terminating Resistance250--200 Resonator Q10000300006000-

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24 Data Sheet: Oscillator Oscillator SpecificationsThis Work [21][20] Frequency (MHz)98.14724500 Process0.5um0.18um Power Dissipation (mW)48.57.29.4 Phase Noise (1 kHz offset) (dBc/Hz)--87-92 Phase Noise Floor (dBc/Hz)--152-147 Open Loop Gain (dB)76.4776- Settling Time (ms)0.025-- Temperature Sensitivity (ppm/C)20-- R m ()1100750- Unloaded Q100002000-

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25 References 1] B. Razavi, RF Microelectronics, Second Edition, Prentice Hall 2011. [2] R. Aigner, Innovative RF Filter Technologies: Gaurdrails for the Wireless Data Highway, Microwave Product Digest. June 2007. [3] S. Pourkamali, G. K. Ho, and F. Ayazi, Low-impedance VHF and UHF capacitive silicon bulk acoustic wave resonators - Part I: Concept and Fabrication IEEE Transactions on Electron Devices, May 2007, Vol. 54, No. 8, Aug. 2007, pp. 2017-2023. [4] S. Pourkamali, G. K. Ho, and F. Ayazi, Low-impedance VHF and UHF capacitive silicon bulk acoustic wave resonators - Part II: Measurement and Characterization, IEEE Transactions on Electron Devices, Vol. 54, No. 8, Aug. 2007, pp. 2024-2030. [5] Z. Hao, S. Pourkamali, and F. Ayazi, VHF Single Crystal Silicon Elliptic Bulk-Mode Capacitive Disk Resonators; Part I: Design and Modeling, IEEE Journal of Microelectromechanical Systems, Vol. 13, No. 6, Dec. 2004, pp. 1043-1053. [6] S. Pourkamali, Z. Hao, and F. Ayazi, VHF Single Crystal Silicon Elliptic Bulk-Mode Capacitive Disk Resonators; Part II: Implementation and Characterization, IEEE Journal of Microelectromechanical Systems, Vol. 13, No. 6, Dec. 2004, pp. 1054-1062. [7] H. Miri Lavassani, R. Abdolvand, and F. Ayazi, A 500MHz Low Phase Noise AlN-on-Silicon Reference Oscillator, Proc. IEEE Custom Integrated Circuits Conference (CICC 2007), Sept. 2007, pp. 599-602. [8] H.M. Lavasani, W. Pan, B. Harrington, R. Abdolvand, and F. Ayazi, A 76dBOhm, 1.7 GHz, 0.18um CMOS Tunable Transimpedance Amplifier Using Broadband Current Pre-Amplifier for High Frequency Lateral Micromechanical Oscillators, IEEE International Solid State Circuits Conference (ISSCC 2010), San Francisco, CA, Jan. 2010, pp. 318-320 [9] B. Razavi, Cognitive Radio Design Challenges and Techniques, IEEE Journal of Solid-State Circuits, vol. 45, pp.1542-1553, Aug. 2010. [10] J. Garrido, Biosensors and Bioelectronics Lecture 10,Walter Schottky Institut Center for Nanotechnology and Nanomaterials. http://www.wsi.tum.de/Portals/0/Media/Lectures/20082/98f31639-f453-466d-bbc2-a76a95d8dead/BiosensorsBioelectronics_lecture10.pdf http://www.wsi.tum.de/Portals/0/Media/Lectures/20082/98f31639-f453-466d-bbc2-a76a95d8dead/BiosensorsBioelectronics_lecture10.pdf [11] S. Pourkamali, R. Abdolvand, and F. Ayazi, A 600kHz Electrically Coupled MEMS Bandpass Filter, Proc. IEEE International Micro Electro Mechanical Systems Conference (MEMS03), Kyoto, Japan, Jan. 2003, pp. 702-705. [12] R. Tabrizian and F. Ayazi, "Laterally Excited Silicon Bulk Acoustic Resonator with Sidewall AlN," International Conference on Solid-State Sensors, Acutators and Microsystems (Transducers), Beijing, China, June 2011. [13] C. Zuo, N. Sinha, G. Piazza, Very High Frequency Channel-Select MEMS Filters based on Self-Coupled Piezoelectric AlN Contour-Mode Resonators, Sensors and Actuators, A Physical, vol. 160, no. 1-2, pp. 132-140, May 2010.

Slide 26 12,000," 2011 IEEE 24th International Conference on Micro Electro Mechanical Systems (MEMS), pp.173-176, 23-27 Jan. 2011. [16] Sheng-Shian Li; Yu-Wei Lin; Zeying Ren; C.T.-C. Nguyen;, "Disk-Array Design for Suppression of Unwanted Modes in Micromechanical Composite- Array Filters,". Istanbul. 19th IEEE International Conference on Micro Electro Mechanical Systems, 2006, pp.866-869, 2006. [17] Dongha Shim; Yunkwon Park; Kuangwoo Nam; Seokchul Yun; Duckhwan Kim; Byeoungju Ha; Insang Song, "Ultra-miniature monolithic FBAR filters for wireless applications," Microwave Symposium Digest, 2005 IEEE MTT-S International, pp. 4 pp., 12-17 June 2005. [18] Ueda, M.; Nishihara, T.; Tsutsumi, J.; Taniguchi, S.; Yokoyama, T.; Inoue, S.; Miyashita, T.; Satoh, Y.;, "High-Q resonators using FBAR/SAW technology and their applications," Microwave Symposium Digest, 2005 IEEE MTT-S International, pp. 4 pp., 12-17 June 2005. [19] Gianluca Piazza, Philip J. Stephanou, Albert P. Pisano, One and two port piezoelectric higher order contour-mode MEMS resonators for mechanical signal processing, Solid-State Electronics, Volume 51, Issues 1112, NovemberDecember 2007, Pages 1596-1608. [20] Lavasani, H.M.; Abdolvand, R.; Ayazi, F.;, "A 500MHz Low Phase-Noise A1N-on-Silicon Reference Oscillator," Custom Integrated Circuits Conference, 2007. CICC '07. IEEE, vol., no., pp.599-602, 16-19 Sept. 2007 [21] Lavasani, H.M.; Wanling Pan; Harrington, B.; Abdolvand, R.; Ayazi, F.;, "A 76 dB 1.7 GHz 0.18 m CMOS Tunable TIA Using Broadband Current Pre-Amplifier for High Frequency Lateral MEMS Oscillators," Solid-State Circuits, IEEE Journal of, vol.46, no.1, pp.224-235, Jan. 2011 [22] K. Sundaresan, G. K. Ho, S. Pourkamali, and F. Ayazi, A Low Phase Noise 100MHz Silicon BAW Reference Oscillator, Proc. IEEE CICC, pp. 841- 844, Sept 2006. [23] Y. Lin, S. Lee, S. Li, Y. Xie, Z. Ren, C.T.-C. Nquyen, Series-Resonant VHF Michromechanical Resonator Reference Oscillators, IEEE J. Solid-State Circuits, vol. 39, no. 12, pp. 2477-2491, Dec 2004. [24] Chengjie Zuo, Nipun Sinha, and Gianluca Piazza. "Very High Frequency Channel-Select MEMS Filters Based on Self-Coupled Piezoelectric AlN Contour-Mode Resonators" Sensors and Actuators A: Physical 160.1-2 (2010): 132-140. [25] Bannon, F.D.; Clark, J.R.; Nguyen, C.T.-C.;, "High-Q HF microelectromechanical filters," Solid-State Circuits, IEEE Journal of, vol.35, no.4, pp.512-526, April 2000 [26] Raditek, Inc., Datasheet for RSAW-BPF-1217-1224M-0303-3V-S Surface Acoustic Wave Band Pass Filter 2009.">

26 References [14] G. Piazza, P.J. Stephanou, A.P. Pisano, Piezoelectric Aluminum Nitride Vibrating Contour-Mode MEMS Resonators, Journal of MicroElectroMechanical Systems, vol. 15, no.6, pp. 1406-1418, December 2006. [15] Li-Wen Hung; Nguyen, C.T.-C.;, "Capacitive-piezoelectric AlN resonators with Q>12,000," 2011 IEEE 24th International Conference on Micro Electro Mechanical Systems (MEMS), pp.173-176, 23-27 Jan. 2011. [16] Sheng-Shian Li; Yu-Wei Lin; Zeying Ren; C.T.-C. Nguyen;, "Disk-Array Design for Suppression of Unwanted Modes in Micromechanical Composite- Array Filters,". Istanbul. 19th IEEE International Conference on Micro Electro Mechanical Systems, 2006, pp.866-869, 2006. [17] Dongha Shim; Yunkwon Park; Kuangwoo Nam; Seokchul Yun; Duckhwan Kim; Byeoungju Ha; Insang Song, "Ultra-miniature monolithic FBAR filters for wireless applications," Microwave Symposium Digest, 2005 IEEE MTT-S International, pp. 4 pp., 12-17 June 2005. [18] Ueda, M.; Nishihara, T.; Tsutsumi, J.; Taniguchi, S.; Yokoyama, T.; Inoue, S.; Miyashita, T.; Satoh, Y.;, "High-Q resonators using FBAR/SAW technology and their applications," Microwave Symposium Digest, 2005 IEEE MTT-S International, pp. 4 pp., 12-17 June 2005. [19] Gianluca Piazza, Philip J. Stephanou, Albert P. Pisano, One and two port piezoelectric higher order contour-mode MEMS resonators for mechanical signal processing, Solid-State Electronics, Volume 51, Issues 1112, NovemberDecember 2007, Pages 1596-1608. [20] Lavasani, H.M.; Abdolvand, R.; Ayazi, F.;, "A 500MHz Low Phase-Noise A1N-on-Silicon Reference Oscillator," Custom Integrated Circuits Conference, 2007. CICC '07. IEEE, vol., no., pp.599-602, 16-19 Sept. 2007 [21] Lavasani, H.M.; Wanling Pan; Harrington, B.; Abdolvand, R.; Ayazi, F.;, "A 76 dB 1.7 GHz 0.18 m CMOS Tunable TIA Using Broadband Current Pre-Amplifier for High Frequency Lateral MEMS Oscillators," Solid-State Circuits, IEEE Journal of, vol.46, no.1, pp.224-235, Jan. 2011 [22] K. Sundaresan, G. K. Ho, S. Pourkamali, and F. Ayazi, A Low Phase Noise 100MHz Silicon BAW Reference Oscillator, Proc. IEEE CICC, pp. 841- 844, Sept 2006. [23] Y. Lin, S. Lee, S. Li, Y. Xie, Z. Ren, C.T.-C. Nquyen, Series-Resonant VHF Michromechanical Resonator Reference Oscillators, IEEE J. Solid-State Circuits, vol. 39, no. 12, pp. 2477-2491, Dec 2004. [24] Chengjie Zuo, Nipun Sinha, and Gianluca Piazza. "Very High Frequency Channel-Select MEMS Filters Based on Self-Coupled Piezoelectric AlN Contour-Mode Resonators" Sensors and Actuators A: Physical 160.1-2 (2010): 132-140. [25] Bannon, F.D.; Clark, J.R.; Nguyen, C.T.-C.;, "High-Q HF microelectromechanical filters," Solid-State Circuits, IEEE Journal of, vol.35, no.4, pp.512-526, April 2000 [26] Raditek, Inc., Datasheet for RSAW-BPF-1217-1224M-0303-3V-S Surface Acoustic Wave Band Pass Filter 2009.