SOT-23 Plastic-Encapsulate MOSFETS SOT-23.pdf(BR)DSS R DS(on)MAX I D 100V 6Ω@10V 0.17A 10Ω@4.5V 1....

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SOT-23 Plastic-Encapsulate MOSFETS BSS123 N Channel MOSFET FEATURE SOT-23 Surface Mount Package High Density Cell Design for Extremely Low R DS(ON) Voltage Controlled Small Signal Switch Rugged and Reliable APPLICATION Small Servo Motor Controls Power MOSFET Gate Drivers Switching Application ABSOLUTE MAXIMUM RATINGS (T a =25unless otherwise noted) Parameter Symbol Value Unit N-MOSFET Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ±20 V Continuous Drain Current (note 1) I D 0.17 A Pulsed Drain Current (tp=10us) I DM 0.68 A Continous Source-Drain Diode Current I S 0.17 A Power Dissipation P D 0.35 W Thermal Resistance from Junction to Ambient (note 1) R θJA 357 /W Junction Temperature T J 150 Storage Temperature T STG -55~+150 Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) T L 260 MARKING Equivalent Circuit V (BR)DSS R DS(on) MAX I D 100 V 6Ω@10V 0.17A 10 Ω@4.5V 1. GATE 2. SOURCE 3. DRAIN 1 2 3 JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD 1 www.jscj-elec.com Rev. - 1.0

Transcript of SOT-23 Plastic-Encapsulate MOSFETS SOT-23.pdf(BR)DSS R DS(on)MAX I D 100V 6Ω@10V 0.17A 10Ω@4.5V 1....

Page 1: SOT-23 Plastic-Encapsulate MOSFETS SOT-23.pdf(BR)DSS R DS(on)MAX I D 100V 6Ω@10V 0.17A 10Ω@4.5V 1. GATE 2. SOURCE 3. DRAIN 1 2 3 JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate MOSFETS

BSS123 N Channel MOSFET

FEATURE

SOT-23

Surface Mount Package

High Density Cell Design for Extremely Low RDS(ON)

Voltage Controlled Small Signal Switch

Rugged and Reliable

APPLICATION Small Servo Motor Controls

Power MOSFET Gate Drivers

Switching Application

ABSOLUTE MAXIMUM RATINGS (Ta=25 unless otherwise noted)

Parameter Symbol Value Unit

N-MOSFET Drain-Source Voltage VDS 100 V

Gate-Source Voltage VGS ±20 V

Continuous Drain Current (note 1) ID 0.17 A

Pulsed Drain Current (tp=10us) IDM 0.68 A

Continous Source-Drain Diode Current IS 0.17 A

Power Dissipation PD 0.35 W

Thermal Resistance from Junction to Ambient (note 1) RθJA 357 /W Junction Temperature TJ 150

Storage Temperature TSTG -55~+150

Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) TL 260

MARKING Equivalent Circuit

V(BR)DSS RDS(on)MAX ID

100V6Ω@10V

0.17A10Ω@4.5V

1. GATE

2. SOURCE

3. DRAIN

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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

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Page 2: SOT-23 Plastic-Encapsulate MOSFETS SOT-23.pdf(BR)DSS R DS(on)MAX I D 100V 6Ω@10V 0.17A 10Ω@4.5V 1. GATE 2. SOURCE 3. DRAIN 1 2 3 JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

Parameter Symbol Test Condition Min Typ Max UnitSTATIC CHARACTERISTICS Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA 100 V

Zero gate voltage drain current IDSS VDS =100V,VGS = 0V 1 µA

VDS =20V,VGS = 0V 10 nA

Gate-body leakage current IGSS VGS =±20V, VDS = 0V ±50 nA

Gate threshold voltage (note 2) VGS(th) VDS =VGS, ID =250µA 1 1.6 2.8 V

Drain-source on-resistance(note 2) RDS(on) VGS =4.5V, ID =0.17A 3.8 10 Ω

VGS =10V, ID =0.17A 3.5 6 Ω

Forward tranconductance(note 2) gFS VDS =10V, ID =170mA 80 mS

Diode forward voltage VSD IS=340mA, VGS = 0V 1.3 V

DYNAMIC CHARACTERISTICS (note 4) Input Capacitance Ciss

VDS =25V,VGS =0V,f =1MHz

29 60 pF

Output Capacitance Coss 10 15 pF

Reverse Transfer Capacitance Crss 2 6 pF

SWITCHING CHARACTERISTICS (note 3,4)Turn-on delay time td(on)

VGS=10V,VDD=30V, ID=0.28A,RGEN=50Ω

8 ns

Turn-on rise time tr 8 ns

Turn-off delay time td(off) 13 ns

Turn-off fall time tf 16 ns

Total Gate Charge Qg VDS=10V,ID=0.22A, VGS=10V

1.4 2 nC

Gate-Source Charge Qgs 0.15 0.25 nC

Gate-Drain Charge Qgd 0.2 0.4 nC

Notes : 1.Surface mounted on FR4 board using the minimum recommended pad size.

2. Pulse Test : Pulse width=300μs, duty cycle≤2%.

3. Switching characteristics are independent of operating junction temperature.

4. Graranted by design,not subject to producting.

MOSFET ELECTRICAL CHARACTERISTICS

T =25 unless otherwise specified a

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Page 3: SOT-23 Plastic-Encapsulate MOSFETS SOT-23.pdf(BR)DSS R DS(on)MAX I D 100V 6Ω@10V 0.17A 10Ω@4.5V 1. GATE 2. SOURCE 3. DRAIN 1 2 3 JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.410

100

400

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.00

50

100

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50 100 150 200 250 300 3502

3

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0 1 2 3 4 5 6 7 8 9 100

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10

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0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.00

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100

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200

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400

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25 50 75 100 1251.0

1.2

1.4

1.6

1.8

2.0

Pulsed

Pulsed

Ta=100

VSD

IS ——

Ta=25

SO

UR

CE

CU

RR

EN

T

I S

(mA)

SOURCE TO DRAIN VOLTAGE VSD (V)

VGS=3V

VGS=2.5V

VGS=2V

VGS=4V,5V,6V

Output Characteristics

D

RA

IN C

UR

RE

NT

I D

(m

A)

DRAIN TO SOURCE VOLTAGE VDS (V)

Ta=25Pulsed

VGS=10V

VGS=4.5V

Ta=25Pulsed

ON

-RES

ISTA

NC

E

RD

S(O

N)

()

DRAIN CURRENT ID (mA)

ID

——RDS(ON)

Ta=100

Ta=25

O

N-R

ESIS

TAN

CE

R

DS

(ON

) (

)

GATE TO SOURCE VOLTAGE VGS (V)

VGS

——RDS(ON)

ID=0.17A

VDS=3VPulsed

DR

AIN

CU

RR

EN

T

I D

(mA)

GATE TO SOURCE VOLTAGE VGS (V)

Transfer Characteristics

Ta=100Ta=25

ID=250uA

Threshold Voltage

THR

ESH

OLD

VO

LTAG

E

VTH

(V

)

JUNCTION TEMPERATURE Tj ( )

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Page 4: SOT-23 Plastic-Encapsulate MOSFETS SOT-23.pdf(BR)DSS R DS(on)MAX I D 100V 6Ω@10V 0.17A 10Ω@4.5V 1. GATE 2. SOURCE 3. DRAIN 1 2 3 JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

Min Max Min MaxA 0.900 1.150 0.035 0.045A1 0.000 0.100 0.000 0.004A2 0.900 1.050 0.035 0.041b 0.300 0.500 0.012 0.020c 0.080 0.150 0.003 0.006D 2.800 3.000 0.110 0.118E 1.200 1.400 0.047 0.055E1 2.250 2.550 0.089 0.100ee1 1.800 2.000 0.071 0.079LL1 0.300 0.500 0.012 0.020θ 0° 8° 0° 8°

0.550 REF 0.022 REF

SymbolDimensions In InchesDimensions In Millimeters

0.950 TYP 0.037 TYP

SOT-23 Package Outline Dimensions

SOT-23 Suggested Pad Layout

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NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein.

Page 5: SOT-23 Plastic-Encapsulate MOSFETS SOT-23.pdf(BR)DSS R DS(on)MAX I D 100V 6Ω@10V 0.17A 10Ω@4.5V 1. GATE 2. SOURCE 3. DRAIN 1 2 3 JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Tape and Reel

SOT-23 Tape and reel

1000

500

2000

1500

2500

3000

G

H

W1

W2

D1

I

D

REEL Reel Size Box Box Size(mm) Carton Carton Size(mm) G.W.(kg)

3000 pcs 7 inch 30,000 pcs 203×203×195 120,000 pcs 438×438×220

SOT-23 Embossed Carrier Tape

SOT-23 Tape Leader and Trailer

SOT-23 Reel

Pkg type

SOT-23

Dimensions are in millimeter

A B C d E F P0 P P1 W

3.15 2.77 1.22 Ø1.50 1.75 3.50 4.00 4.00 2.00 8.00

Reel Option

7''Dia

Dimensions are in millimeter

D2

D D1 D2 G H I W1 W2

Ø178.00 54.40 13.00 R78.00 R25.60 R6.50 9.50 12.30

Packaging Description: SOT-23 parts are shipped in tape. The carriertape is made from a dissipative (carbon filled)polycarbonate resin. The cover tape is a multilayerfilm (Heat Activated Adhesive in nature) primarilycomposed of polyester film, adhesive layer, sealant,and anti-static sprayed agent. These reeled parts instandard option are shipped with 3,000 units per 7"or 17.8cm diameter reel. The reels are clear in colorand is made of polystyrene plastic (anti-staticcoated).

P1P0

P

FW

E

Ad

A

A

Trailer Tape Leader Tape50±2 Empty Pockets 100±2 Empty PocketsComponents

B

C

A-A

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