SOT-23 Plastic-Encapsulate Diodes SOT-23 V2...E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e...
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Solid dot = Green molding compound device,if none,the normal device. MMBD914 SWITCHING DIODE FEATURES High-Speed Switching Diode SOT-23 1 2 3 MARKING: 5D Maximum Ratings @Ta=25℃ Parameter Symbol Limit Unit Non-Repetitive Peak Reverse Voltage V RM 100 V Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRM V RWM V R 100 V Average Rectified Output Current I O 300 mA Forward Surge Current I FSM 2 A Power Dissipation P D 350 mW Thermal Resistance Junction to Ambient R θJA 357 ℃/W Operation Junction and Storage Temperature Range T j ,T STG ℃ -55~+150 Electrical Characteristics@Ta=25℃ Parameter Symbol Min Typ Max Unit Conditions Reverse Breakdown Voltage V (BR) 100 V I R =100μA V F1 715 mV I F =1mA V F2 855 mV I F =10mA V F3 1000 mV I F =50mA Forward Voltage V F4 1250 mV I F =150mA I R1 1 uA V R =75V Reverse Current I R2 25 nA V R =20V Diode Capacitance C D 2 pF V R =0,f=1MHz Reverse Recovery Time t rr 4 ns I F =I R =10mA, I rr =0.1*I R Non-Repetitive Peak t=8.3ms @ 5D 5D JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1 Rev. - 2.0 www.jscj-elec.com
Transcript of SOT-23 Plastic-Encapsulate Diodes SOT-23 V2...E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e...
Solid dot = Green molding compound device,if none,the normal device.
MMBD914 SWITCHING DIODE
FEATURES High-Speed Switching Diode
SOT-23
1
23
MARKING: 5D
Maximum Ratings @Ta=25℃
Parameter Symbol Limit Unit Non-Repetitive Peak Reverse Voltage VRM 100 VPeak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
VRRM VRWM
VR 100 V
Average Rectified Output Current IO 300 mAForward Surge Current IFSM 2 A
Power Dissipation PD 350 mW
Thermal Resistance Junction to Ambient RθJA 357 ℃/W
Operation Junction and Storage Temperature Range Tj ,TSTG ℃ -55~+150
Electrical Characteristics@Ta=25℃
Parameter Symbol Min Typ Max Unit Conditions
Reverse Breakdown Voltage V (BR) 100 V IR=100μA
VF1 715 mV IF=1mA
VF2 855 mV IF=10mA
VF3 1000 mV IF=50mA Forward Voltage
VF4 1250 mV IF=150mA
IR1 1 uA VR=75V Reverse Current
IR2 25 nA VR=20V
Diode Capacitance CD 2 pF VR=0,f=1MHz
Reverse Recovery Time trr 4 ns IF =IR=10mA,
Irr=0.1*IR
Non-Repetitive Peak t=8.3ms @
5 D 5 D
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
1 Rev. - 2.0www.jscj-elec.com
Typical Characteristics
0 25 50 75 100 125 1500
100
200
300
400
0.0 0.4 0.8 1.2 1.60.1
1
10
100
0 20 40 60 801
10
100
1000
0 5 10 15 201.0
1.1
1.2
1.3
1.4Power Derating Curve
POW
ER D
ISSI
PATI
ON
P
D
(mW
)
AMBIENT TEMPERATURE Ta ( )℃
300
30
3
0.3
Ta=1
00℃
Ta=2
5℃
FOR
WA
RD
CU
RR
EN
T
I F (m
A)
FORWARD VOLTAGE VF (V)
300
30
3
Ta=100℃
Ta=25℃
REV
ERSE
CU
RR
ENT
IR
(nA)
REVERSE VOLTAGE VR (V)
Forward Characteristics Reverse Characteristics
Ta=25℃f=1MHz
Capacitance Characteristics
REVERSE VOLTAGE VR (V)
CAP
ACIT
ANC
E BE
TWEE
N T
ERM
INAL
SC
T (p
F)
2 Rev. - 2.0www.jscj-elec.com
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Min Max Min MaxA 0.900 1.150 0.035 0.045
A1 0.000 0.100 0.000 0.004A2 0.900 1.050 0.035 0.041b 0.300 0.500 0.012 0.020c 0.080 0.150 0.003 0.006D 2.800 3.000 0.110 0.118E 1.200 1.400 0.047 0.055E1 2.250 2.550 0.089 0.100ee1 1.800 2.000 0.071 0.079LL1 0.300 0.500 0.012 0.020θ 0° 8° 0° 8°
0.550 REF 0.022 REF
Symbol Dimensions In InchesDimensions In Millimeters
0.950 TYP 0.037 TYP
SOT-23 Suggested Pad Layout
3 Rev. - 2.0www.jscj-elec.com
NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein.
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4 Rev. - 2.0www.jscj-elec.com
