Solar-Powered RF Signal Generation for Energy Harvester...

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Solar-Powered RF Signal Generation for Energy Harvester Applications Michelle Saltouros and Samuel Casey Department of Electrical and Computer Engineering Bradley University Advisors: Dr. Brian Huggins and Dr. Prasad Shastry Senior Project Report May 2018

Transcript of Solar-Powered RF Signal Generation for Energy Harvester...

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Solar-Powered RF Signal Generation for Energy Harvester Applications

Michelle Saltouros and Samuel Casey

Department of Electrical and Computer Engineering

Bradley University

Advisors: Dr. Brian Huggins and Dr. Prasad Shastry

Senior Project Report

May 2018

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Abstract

In this project, a solar-powered radio frequency (RF) signal transmitter for wireless energy harvesting

has been designed, implemented and tested. The project uses a photovoltaic panel to convert solar

power into electric power which is stored as chemical energy over time in a battery. The battery is used

to power a voltage-controlled RF oscillator and RF power amplifier that generates and transmits a 915

MHz signal through an antenna to be received and converted to DC energy by an energy harvester. The

project is designed for 24/7 operation, even with low insolation, so efficiency of the electronic and RF

subsystems is an important design consideration. This wireless powering system has potential

applications for powering remote sensors and controllers, as well as powering equipment in hazardous

or controlled environments.

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Acknowledgments

We would like to give special thanks to Dr. Prasad Shastry and Dr. Brian Huggins for advising us on this

project. We would also like to thank Mr. Chris Mattus, Mr. Nick Schmidt, and Professor Steven Gutschlag

for helping us.

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Table of Contents

Abstract

Acknowledgements

Chapter 1

Introduction

Chapter 2

Literature Review

2.1 Introduction

2.2 Solar Panel Operations

2.3 Charge Controllers

2.4 Wireless Power Applications

2.5 Concluding Remarks

Chapter 3

Design and Analysis

3.1 Introduction

3.2 PV Array Subsystem

3.3 RF Subsystem

3.4 DC/DC Converters and Voltage Divider

3.5 Full System

3.6 Concluding Remarks

Chapter 4

Tests and Measurements

4.1 Introduction

4.2 Solar Panel

4.3 PV Array Subsystem

4.4 Voltage-Controlled Oscillator

4.5 Power Amplifier

4.6 Energy Harvester

4.7 RF Subsystem

4.8 Complete System

4.9 Concluding Remarks

Chapter 5

Experimental Results

5.1 Introduction

5.2 PV Array Subsystem

5.3 RF Subsystems

5.4 Complete System

5.5 Concluding Remarks

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Chapter 6

Conclusions and Recommendations

References

Appendices

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Chapter 1

Introduction

The goal of this project was to design a 915 MHz RF transmitter powered by solar energy, instead of

utility power. The system has the capacity to store backup power for times with low levels of insolation.

It was built for 24/7 operation.

The RF transmitter frequency of 915 MHz was chosen since it iss used in the ongoing Panduit wireless

power transfer project. In addition, the transmitter may be used as a source of RF power for charge

pumps designed for 915 MHz operation in a concurrent senior project. This wireless powering system

has potential applications for powering remote sensors and controllers. The output power of the

transmitter is limited to 1 Watt per Federal Communications Commission (FCC) regulation. The system

runs continuously.

There are many potential applications for a project like this. A couple of important ones would be the

ability to power equipment in hazardous or flammable environments that could not risk a potential

spark. Another would be to power moving equipment that could not have wires connected to it. It could

power remote sensors and testing equipment. It also has applications in far-field wireless charging of

devices.

The project objectives were to transmit at 915MHz and under 1W of power and to be solar-powered.

The system was also designed for 24/7 operation.

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Chapter 2

Literature Review

2.1 Introduction

A brief engineering study was done on solar panels, charge controllers, and wireless power. This chapter

presents a review of the published works on these topics.

2.2 Solar Panels

Solar panels are a green energy alternative to fossil fuels, using the energy of the sun to power anything

from houses to whole grids instead of coal or oil. Throughout the years, a lot of research has gone into

improving their designs, making them not only more efficient but also cheaper.

Solar panels are able to generate electricity through a variety of different technologies working

together. The following section will describe the basics of how solar panels work and the circuitry behind

them.

Functionality of Solar Panels

Solar panels are able to generate electricity by letting particles of light move electrons from atoms. They are photovoltaic (PV), which means they can convert sunlight into useable energy or electricity. In order to work, the cells in the panels need an electric filed which is created by giving the top of the panel negative charges and the bottom positive charges [1]. This is done by combining different types of materials together, which will be discussed later.

From here, metal plates take the electrons and send them through wires, where they flow like electricity usually does. The panel has then converted energy into DC current. The US uses AC power in its grids, so many panels have inverters that convert the DC current to AC current [2].

Once this conversion had taken place, the energy can be used to power something like the grids used to run electricity in houses and buildings.

Circuitry

A single diode circuit is an equivalent circuit to a single solar cell. Solar panels are made up of multiple solar cells. The circuit in Figure 1 is the most commonly used equivalent circuit model. It uses a diode and two resistors [3].

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Figure 1. Single Diode Equivalent Circuit Model

Kirchoff’s Law can be used to find the current, while the Shockley equation can be used for the ideal diode. The circuit is a fairly simple one, allowing solar panels to be built easily [3].

Materials

Solar panels are typically made of silicon. The silicon is “doped” in order to create the electric current needed to generate power. This is done by combing phosphorus in the top layer for a negative charge, and boron in the bottom layer for a positive charge [1].

There are two different types of structures silicon comes in that are commonly used for solar panels. The first is mono-crystalline and the second is polycrystalline. Mono-crystalline solar panels are made from one large silicon block that is cut into wafers, while polycrystalline solar panels are made of silicon cells that are made by melting silicon crystals together. Mono-crystalline panels are more efficient, but polycrystalline panels are less expensive [1].

Power Generation

In just five years, the price of solar panels has dropped by over 50%. This trend is expected to continue overtime, with 20% of energy consumption in 2027 being solar powered. With companies like Tesla now joining the market, solar panels are become more marketable and increasing in demand. Bio-materials to replace silicon currently used is being researched. This could eventually make wireless power applications easier to create [4].

Currently, research in Germany and Israel is finding newer ways to make panels more efficient and able to store more energy for late. From using solar panels in orbit, to designing trees that will store solar energy in their leaves, research is being done all over the world to improve upon solar power generation and storage [4].

2.3 Charge Controllers

A charge controller is a type of voltage regulator that maximizes efficiency of charging and prevents overcharging of a battery. Originally charge controllers were shunt transistor circuits that just cut off voltage from the solar panel to the battery that was higher than the rated battery voltage. These controllers were highly inefficient and have become obsolete. The new type of charge controllers are PWM controllers. PWM controllers have become the industry standard and have efficiencies of around 60% to 80%. A newer type of controller, called maximum power point tracking (MPPT), is starting to take

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over as a new industry standard. They have efficiencies from 94% to 98 % typically and can provide 10% to 30% more power to a battery [5]. MPPT Charge Controllers

MPPT charge controllers are a type of DC/DC converter that optimizes the power from the solar array to the battery. They work by measuring the output voltage of the panel and matching it to the best voltage for getting a high current into the battery. The point at which the panel voltage is converted to for optimal charging is referred to as the maximum power point. This power point is affected by the charge of the battery and the temperature of the panels. When the battery is at a lower charge, there is greater power loss for charge controllers that are not MPPT due to the greater mismatch of panel voltage to battery voltage. On cold days solar panels output higher than rated power because of the nature of PV cells. The higher output power is lost when converting down to battery voltage unless a MPPT charge controller is used because it can track that increase in the maximum power point [6]. Functionality of MPPT Controllers

MPPT controllers take the DC input from the panel, convert it to an AC signal that is typically in the 20-80 kHz range, and then converts it back to the most efficient DC output to the battery. The controller is controlled by a microprocessor that checks the panel voltage, panel power, and the battery voltage. The microprocessor then uses those values to determine the most efficient voltage and current to convert the input into for the output [6].

2.4 Wireless Power

Wireless power transfer (WPT) is split into two categories: inductive and far-field. Inductive charging is the technology embedded in modern smartphones and other devices that work when the phone is placed on a charging pad. This method works based on the principle of electromagnetic inductive coupling and can only transfer power for maximum of about 4cm. Far-field WPT uses radio frequency (RF) waves to transfer the power over longer distances. A RF signal is sent out from an antenna that is received and converted to usable DC power [7]. Applications

Far-field WPT has useful applications in daily life, equipment testing, space exploration, and other applications. Everyday people carry around mobile devices that are critical for work that rely on battery power. If a device runs out of battery power, critical time will be wasted in recharging the device. If a battery dies then important work can also be lost. So, if far-field WPT was imbedded into devices and WiFi networks then the issue of “battery life” is greatly reduced for mobile devices [7]. When sensors are used on rotating machinery, they must be powered from cables that have expensive rotating couplers or from batteries that have a limited amount of charge. Sending power to these sensors wirelessly eliminates both of those problems. WPT also has potential applications in space travel and research. Weight savings on spacecraft leads to massive cost savings due to the nature of launching into orbit. Replacing portions of cabling on a spacecraft with WPT systems could lead to weight reductions and massive cost savings.

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2.5 Concluding Remarks

In this project, a solar panel and charge controller will be used to power an RF signal generator that will

transmit a signal to an energy harvester.

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Chapter 3

Design and Analysis

3.1 Introduction

In this chapter, the designs of the two subsystems in this project and the complete system will be

discussed. The two subsystems are the RF Subsystem and the PV Array Subsystem which together make

up the complete system.

The system was designed to use a 915 MHz signal as suggested by a previous senior project and to run

for 24/7 operation. It transmits under 1 Watt to follow FCC regulations. It is solar powered using one

solar panel and generates and transmits RF power using a transmitting antenna.

3.2 Complete System

The block diagram of the system is shown in Fig. 2. Incident solar radiation is converted to DC power by the Photovoltaic (PV) array. The important parameters for the PV array are voltage, current, and power outputs as a function of insolation. The array connects to the charge controller which interfaces to the battery. The important parameters for the charge controller are input and output voltage, current, efficiency, power, and how well it can regulate these parameters.

Figure 2. The Complete System Block Diagram

The battery specifications are capacity, voltage, current, and power. The values of the parameters for these 3 subsystems (see Figs. 3 and 4) were determined in consideration of the RF subsystem requirements. These include supply voltage and current for both the oscillator and power amplifier (PA) as well as the duty cycle of the RF transmission.

The PV subsystem and RF subsystem are connected by wires from the battery to the 915 MHz oscillator and through a DC-DC converter to the power amplifier. The DC-DC converter is used to change the voltage level of the battery (12V) to the voltage level required by power amplifier (5V). A voltage divider is used for the tuning of the 915 MHz oscillator. This is in order to obtain the voltage needed for the 915

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MHz signal to be sent out (7.9V). The following tables present the parts used in the complete system and their corresponding subsystems.

Table 1

Specifications of RF Subsystem Parts

Part Name Part Number Vcc Current Power Output

Gain Frequency Impedance

Voltage Controlled Oscillator

ZOS-1025+ 12V 140mA 8dBm 685MHz-1025MHz

50Ω

Power Amplifier

ZX60-V63+ 5.0V 69mA 18.5dBm 21dB 0.05-6GHz 50Ω

Table 2

Specifications of PV Subsystem Parts

Part Part Name Type Rated Power Nominal Battery Voltage

Max Voltage Short-Circuit Current

PV Panel BP 350

50W 12V 21.8V 3.2A

Charge Controller

Genasun GV-4

MPPT 50W 12V 27V 4A

Battery Sun Xtender PVX-340T

AGM 12V 12V

The 915 MHz oscillator and power amplifier were purchased from Mini-Circuits Company. These parts

were chosen because of their frequency ranges that included the 915MHz the system was to run at, and

also because they were connectorized components. Being connectorized made them easier to work with

and test in this project.

The solar panel is the BP 350 that the ECE department already owns. Along with this, the charge

controller that was chosen is the Genasun GV-4. Once all of these parts were chosen, a battery with

enough capacity was picked out, and a 12/5V DC/DC converter the ECE department owned was used.

The battery was chosen using the textbook Applied Photovoltaics Second Edition that suggested using a

battery with 15 days of backup storage [8]. The following are the calculations used:

Voltage draw of RF Subsystem: 17V

Current draw of RF Subsystem: 209mA

Ideal Battery:

209𝑚𝐴 ∗ 24ℎ ∗ 15𝑑𝑎𝑦𝑠 = 75,240𝑚𝐴ℎ

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Chosen Test Battery:

34Ah / 209mA / 24h = 6.78 days of storage

The battery was chosen to have about half of the necessary storage for testing purposes. In order to

prove the system works, it was not necessary to purchase a battery with 13 days of storage.

Five parts were ordered for this specific project. Below are the specs of the chosen parts:

ZOS-1025+: 915 MHz Oscillator (Mini Circuits)

− 12V max operating voltage, 8dBm power output, 50 output impedance, 140mA

operating current

ZX60-V63+: Power Amplifier (Mini Circuits)

− 0.05 to 6 GHz (wideband), 21 dB gain, 5.0V, 69mA DC Current, 18.5dBm power output

BP 350: Photovoltaic Panel (BP Solar)

− Max power (50 W), Short Circuit Current (3.2 A)

Genasun GV-4: MPPT Charge Controller (Genasun)

− Max Panel Power (50 W), Rated battery (output) current (4 A), Electrical Efficiency (96%

- 99.85% typical)

Sun Xtender PVX-340T: AGM Battery (Wholesale Solar)

− 12V rated voltage, 34Ah capacity (408Wh), Absorbent glass matt (AGM) deep cycle,

non-spillable lead acid

3.3 PV Array Subsystem

The first subsystem is the PV Array Subsystem. It contains the solar panel, charge controller, and battery

as shown in Fig. 3.

Figure 3. PV Array Subsystem

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3.4 RF Subsystem

The other part of the system is the RF Subsystem which can be seen in Figure 4. This subsystem consists

of a DC power supply, the 915 MHz oscillator, the power amplifier, the transmitting antenna, and a test

circuit consisting of a receiving antenna, energy harvester, and load. It will be tested to verify that the

system can properly transmit and receive power wirelessly.

Figure 4. RF Subsystem Including the Energy Harvester

3.5 DC/DC Converter and Voltage Divider

The DC/DC converter that was used took the 12V from the charge controller and sent out 5V to the

power amplifier. The power amplifier required 5V to work. The DC/DC converter chosen was the

LM7805 (Fig. 5) that was already available in the ECE department. The converter needed two capacitors

in order to have a stable output. The following diagram is the circuit set-up for the LM7805 as given in

its datasheet that is included in the appendix.

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Figure 5. LM7805 Circuit

The voltage divider was used to supply the correct tuning voltage to the voltage-controlled oscillator.

The tuning voltage was 7.79V for 915MHz. In order to get this voltage, a 300k and a 560k resistors

were used. The following diagram is an example of the voltage divider used [9].

Figure 6. Voltage Divider Circuit

A voltage divider was used instead of a DC/DC converter because a specialized DC/DC converter is have

needed in order to get the 7.79V. The tuning voltage port of the voltage-controlled oscillator draws no

current and the voltage divider circuit draws 167.4W of power, compared to the rest of the system,

this power draw is very tiny, and so the efficiency is not appreciably affected.

3.6 Concluding Remarks

The system and subsystems were then tested. Observations were recorded, measurements were taken,

and analysis was done on all tests. The following chapters discuss these tests and experimental results.

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Chapter 4

Tests and Measurements

4.1 Introduction

Tests were conducted and measurements were taken on the components and the two subsystems. The

Power and Microwave laboratories were used for these tests. The network analyzer, spectrum analyzer,

oscilloscope, multimeter, and signal generators were used for the testing.

4.2 Solar Panel

Measurements were taken of the solar panel during different types of weather to observe how efficient

the panel was during the year. All types of weather were seen, sunny, raining, snowing, etc. The solar

panel was taken outside of Jobst Hall on a cart and faced towards south for all measurements. Slight

shadows on the panel drastically reduce the power output so measurements through a window were

not possible. A multimeter was used to record the values of short circuit current and open circuit

voltage as well as voltage and current in a 200 rheostat.

4.3 PV Array Subsystem

To test the PV Subsystem, the panel, charge controller, and battery were taken outside the building. The

same measurements taken previously on the solar panel were first taken, using the same 200 rheostat. Then the components of the subsystem were connected. The voltage into and out of the charge controller were measured. Then the currents into and out of the charge controller were also measured. Measurements were then taken from the solar panel, and between the parts of the system. The system was taken outside of Jobst Hall on a cart and the panel faced South for all measurements.

4.4 Voltage-Controlled Oscillator

The voltage-controlled oscillator (VCO) was tested using a spectrum analyzer. The AUX OUT port was

terminated with 50. Two adapters were used on the tuning voltage port (CON), an SMA (m) – BNC (f)

and BNC (m) – power and ground banana input ports. 12V was hooked up to the DC port. The OUT port,

the output, was connected to the spectrum analyzer. A DC blocking capacitor was used in the OUT port.

The frequency range on the spectrum analyzer was set to 600-1030MHz to include the entire frequency

range (685-1025MHz) of the VCO. Two power supplies were used. The tuning voltage was originally set

to 0V. The supply current was recorded to be 0.12A.

The tuning voltage was increased from 0V to 16V in increments of 1V with the exceptions of the voltages

that gave the 685, 915, and 1025MHz frequencies. The signal peak power and frequency were recorded.

The 915MHz signal was then captured again with a narrower range in order to see any sidebands. The

first and second harmonics levels were recorded.

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4.5 Power Amplifier

The network analyzer was used for the testing of the power amplifier. The frequency range was set to

0.05GHz- 6GHz. The power was set to -20dB, since the max gain is 22dB and the network analyzer

cannot handle more than 20dBm. No DC blocking capacitors were used since the component already has

one built in.

5V was gradually applied to the power amplifier once it was hooked up to the network analyzer. As 5V

increased, the S21 trace moved up. At 5V, the current drawn by the amplifier was 0.07A.

Using ADS, the magnitude (dB) plots of the S-parameters and the phase (degrees) plots of the S-

parameters were taken. Markers were put at 915MHz, the operating frequency, and 685MHz and

1025MHz, the minimum and maximum frequency. All plots can be seen in Chapter 5.

4.6 Energy Harvester

The Powercast energy harvester was used to test the RF subsystem and later test the complete system.

In Figure 7 below, the energy harvester is shown with onboard switches S1, S2, S3 and S4 are labeled.

Figure 7. Powercast Energy Harvester

Switch S1 controls the voltage from the rectifier within the Powercast. It can be set to 4.2V, 3.3V, or ADJ

which allows the voltage to be controlled by R5 and R6. Switch S2 controls where the power goes. The

power can be sent to LED, MEAS, or VCC. LED powers a LED on the board. MEAS sends power to S3. VCC

sends power to S4. For this project S2 was set to VCC and S3 was never used. S4 has the settings OFF,

BATT, and C6. OFF opens the circuit and turns the Powercast off. BATT sends the power to the BATT

terminals for the purpose of charging a battery. C6 is stated to be a 50mF supercapacitor on the

evaluation board instruction manual. This capacitor smooths the output of the rectifier to be a DC

voltage so measurements will be taken from the capacitor.

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The switches will be set as: S1 to 4.2V, S2 to VCC, S3 is irrelevant, and S4 to C6. Measurements will be

taken from the C6 terminal to ground.

4.7 RF Subsystem

The RF subsystem was hooked up all together and powered by three different signal generators. The

output of the power amplifier was connected to the transmitting antenna of the energy harvester. The

receiving antenna was connected to the energy harvester and placed on a moving cart. An oscilloscope

was connected to the on-board capacitor in order to record the voltage.

The two antennas were tested using the spectrum analyzer to record the transmitting and receiving

frequency and power. Then the entire system was tested using the oscilloscope. The system was

confirmed to work once the capacitor charged up.

The cart was then moved from 0.5-18ft. The capacitor voltage was recorded every foot. It was seen that

the capacitor charged up even at 18ft., the distance of the RF lab.

4.8 Complete System

The complete system was set up in the Power laboratory. The PV array subsystem was placed by the

window facing south and the RF subsystem was connected and taped down to a board so it was easy to

move and would stay in place. The two systems were connected by a 1A fuse. The charge controller was

connected to the fuse and the fuse was connected to the 12V line on the breadboard holding the DC/DC

converter and the voltage divider.

The energy harvester with the connected receiving antenna was placed onto the same cart and the

oscilloscope was connected to the on-board capacitor. The complete system was then powered up. The

system worked as planned, and transmitted the 915MHz signal to the receiving antenna that then used

the power to charge up a capacitor.

4.9 Concluding Remarks

Each part and subsystem was tested using the equipment in the Power and Microwave laboratories. All

tests were recorded and the results can be seen in the next Chapter. The system worked as expected.

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Chapter 5

Experimental Results

5.1 Introduction

The two subsystems were tested separately and then finally together. This chapter presents and

discusses the experimental results.

5.2 PV Array Subsystem

The solar panel was originally tested on its own to ensure functionality and its performance in different

types of weather. The measurements were taken outside on different days. The following is a table of

the measurements.

Table 3

Solar Panel Measurements

The current from the panel changes significantly depending on the weather. The current ranges from 50

mA up to 4.1A. The voltage typically stays above the rated 17.5V except for when there was almost no

sunlight. If the solar panel was stored outside then the temperature of the panel would also become a

factor that should be measured.

The PV array subsystem was connected. A 200 rheostat was used for measurements that required a

load. The following is a picture of the PV array subsystem (Fig. 8).

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Figure 8. PV Array Subsystem

Measurements were taken using a multimeter outside on April 26th, 2018 at 3:10pm. The weather was

partially cloudy. Below is a table of the measurements taken and recorded.

Table 4

PV Array Measurements

Measurement Measured Value

Solar Panel Open Circuit Voltage 20.30V

Solar Panel Short Circuit Current 1.62A

Solar Panel with Rheostat Load Voltage 20V

Solar Panel with Rheostat Load Current 0.116A

Solar Panel to Charge Controller Voltage 16V

Solar Panel to Charge Controller Current 1.16A

Charge Controller to Battery Voltage 12.97V

Charge Controller to Battery Current 1.31A

From these measurements, it was confirmed that the PV array subsystem was working as expected. The

output voltage of the panel was converted from 16V to 12.97V to go into the battery. The voltage going

into the battery must be slightly higher than the battery’s current voltage so that it will charge. The

current is increased from 1.16A coming out of the panel to 1.31A going into the battery. These results

are what we expected to find and confirm proper functionality of the PV subsystem.

5.3 RF Subsystem

The parts of the RF Subsystem were measured separately and then together with the energy harvester.

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Voltage-Controlled Oscillator

The voltage-controlled oscillator was measured using the spectrum analyzer in the RF Lab. The following

are the resulting plots that were captured using Benchlink. The data on the tuning voltage for each

frequency can be seen in the following table.

Table 5

Frequency vs. Tuning Voltage

Tuning Voltage (V)

Signal Peak Power (dBm)

Frequency (MHz)

0 4.61 514.6

1 9.04 588.8

2 10.47 644.1

2.88 10.64 685.5

3 10.72 691.4

4 10.3 734.4

5 9.92 790.3

6 10.09 842.9

7 9.96 884.9

7.79 9.83 915

8 9.82 921.4

9 9.86 952.6

10 9.61 979.5

11 9.51 1002.5

12 9.41 1022.5

12.17 9.43 1025.7

13 9.33 1039.5

14 9.29 1056

15 9.11 1071

16 9.01 1086

The data in the foregoing table was plotted (Fig. 9). The black dots in the plot represent 685MHz,

915MHz, and 1025MHz.

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Figure 9. Frequency (MHz) vs. Tuning Voltage (V)

Plots from the spectrum analyzer were also taken at 685MHz, 915MHz, and 1025MHz. They can be seen

in Figs. 10, 11, and 12.

Figure 10. 685.5MHz signal @ 2.88V

Figure 11. 1025.7MHz signal @ 12.17V

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Figure 12. 915MHz signal @ 7.79V

The first and second harmonics of the 915MHz signal were also captured using the spectrum analyzer.

They can be seen in fig. 13.

Figure 13. Harmonics of the 915MHz signal

Given all of this information, the tuning voltages for the frequency range of the VCO were found and the

tuning voltage, 7.79V, which would give exactly 915MHz was found. These numbers varied slightly from

the datasheet. 7.79V was used for both RF subsystem and complete system testing.

Power Amplifier

The power amplifier was measured using the Network Analyzer in the RF Laboratory. Following are the

resulting plots that were captured in ADS. The first four plots are the magnitude plots of the S-

parameters (Figs. 14, 15, 16, and 17).

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Figure 14. Magnitude of S11

Figure 15. Magnitude of S12

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Figure 16. Magnitude of S21

Figure 17. Magnitude of S22

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The next four plots show the phases of the four S-parameters (Figs. 18, 19, 20, and 21).

Figure 18. Phase of S11

Figure 19. Phase of S12

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Figure 20. Phase of S21

Figure 21. Phase of S22

From this testing, it was learned that the exact gain of the power amplifier at 915MHz was 21.127dB.

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Energy Harvesting

The entire RF subsystem was connected and powered up, along with the transmitting and receiving

antennas. The receiving antenna was connected to an energy harvester that had an on-board capacitor

across which measurements were taken. Shown in Figs. 22 and 23 are the photos of the RF subsystem

hooked up to the spectrum analyzer and the energy harvester on a moving cart.

Figure 22. RF Subsystem

Figure 23. Energy Harvester

The transmitting antenna’s power was measured on the spectrum analyzer and then the receiving

antenna’s power was measured. Figs. 24 and 25 show the plots showing that the transmitted power is

received by the other antenna at 915MHz.

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Figure 24. Transmitting Antenna Signal

Figure 25. Receiving Antenna Signal

The entire RF subsystem was then tested from 0.5-18 feet to see if the signal was still strong enough to

reach the receiving antenna. Shown in Table 6 is the data collected at these distances.

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Table 6

Distance (ft.) vs. Capacitor Voltage (V)

Distance (ft.) Capacitor Voltage (V)

0.5 4.2

1 4.2

2 4.2

3 4.16

4 4.12

5 4.04

6 4.04

7 4

8 3.96

9 3.96

10 3.92

11 3.92

12 3.92

13 3.88

14 3.84

15 3.84

16 3.84

17 3.84

18 3.8

Figure 26. Capacitor Voltage (V) vs. Distance (ft.)

As it can be seen in Figure 26, the voltage measured across the capacitor does not change by a

significant amount. It is believed that if given a bit more time, the capacitor would charge back up to

4.2V even at the distance of 18ft. This is due to the signal taking a longer time to power the capacitor

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26

than before because of the longer distance and hence lower received power. However, it was proven

that even at 18ft., the capacitor was still charged up by the RF subsystem.

5.4 Complete System

The entire system was connected in the Power lab and tested. Figs. 27, 28, 29, 30, 30, 32, and 33 are

photos of the system.

Figure 27. PV Array Subsystem

Figure 28. PV Array Subsystem Connected to 1A Fuse

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Figure 29. RF Subsystem

Figure 30. Voltage Divider and DC/DC Converter Circuit

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Figure 31. Complete System

Figure 32. Energy Harvester

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Figure 33. Complete System

The complete system worked as expected and transmitted at 915MHz. 4.2V was developed across the

capacitor. Shown in Fig. 34 is a picture of the received signal measured on the oscilloscope.

Figure 34. Capacitor Voltage (4.24V) Developed by the System

Unfortunately, on another test run, the voltage-controlled oscillator stopped working and no further

measurements could be taken. The VCO was tested on the spectrum analyzer with a 7.79V tuning

voltage and it was found that the VCO was still giving out the 915MHz signal, but at -65dBm level instead

of the previous 10dBm. It is believed that the internal amplifier stopped functioning properly, and the

signal was below the noise threshold of the power amplifier, thus the full system no longer worked

properly. It appears that the part may have been faulty. No further tests could be done. However, it was

confirmed that the complete system worked as expected.

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5.5 Concluding Remarks

Each part of the subsystems was tested and observed for its correct functionality needed to make the

complete system work. All plots and data were recorded. The system ran as expected during all tests.

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31

Chapter 6

Conclusion and Recommendations

Overall, the complete system worked as expected and transmitted power to the receiving antenna that

charged up the on-board capacitor of the energy harvester. The complete system was tested a couple of

times and it worked each time. Unfortunately, on one of the test runs, the voltage-controlled oscillator

stopped working correctly. It is believed the internal amplifier might have been faulty. However, the

system was already proven to work and the data necessary to complete the project was taken.

The system ran at 915MHz and was solar-powered. It also transmitted power wirelessly from one

antenna to another. The system transmits about 0.156W.

For future work on the project, there are a few recommendations.

1. A DC/DC converter for the 7.79 tuning voltage replaces the voltage divider.

2. A battery with 15 days of backup storage and a solar panel with a higher rating would also

improve the project.

3. A microcontroller-based variable duty cycle could be used, or a new charge controller could be

designed for the system.

4. A higher power amplifier with a larger gain or a power amplifier designed and built for the

system could also be used.

5. The RF subsystem could be integrated on a single PCB, using oscillator and amplifier packaged

chips.

The project worked as intended and showed potential use for real-world applications like powering

devices in hazardous or moving environments. The system met all previously set requirements, and

hence the project is considered a success.

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32

References

[1] M. Dhar, “The History Of Solar Power,” Experience, 03-Aug-2017. [Online]. Available:

https://www.experience.com/advice/careers/ideas/the-history-of-solar-power/. [Accessed: 05-

Apr-2018].

[2] M. DeBono, “How Does Solar Energy Work | SunPower Solar Blog,” SunPower - United States, 20-

Oct-2017. [Online]. Available: https://us.sunpower.com/blog/2017/10/25/how-does-solar-

energy-work/. [Accessed: 05-Apr-2018].

[3] “Single Diode Equivalent Circuit Models,” PV Performance Modeling Collaborative, 2018. [Online].

Available: https://pvpmc.sandia.gov/modeling-steps/2-dc-module-iv/diode-equivalent-circuit-

models/. [Accessed: 05-Apr-2018].

[4] Rinkesh, “The Future of Solar Energy,” Conserve Energy Future, 25-Dec-2016. [Online]. Available:

https://www.conserve-energy-future.com/future-solar-energy.php. [Accessed: 05-Apr-2018].

[5] “Solar Charge Controller Basics,” Northern Arizona Wind & Sun, 2018. [Online]. Available: https://www.solar-electric.com/learning-center/batteries-and-charging/solar-charge-controller-basics.html. [Accessed: 02-May-2018].

[6] “All About Maximum Power Point Tracking (MPPT) Solar Charge Controllers,” Northern Arizona Wind

& Sun, 2018. [Online]. Available: https://www.solar-electric.com/learning-center/batteries-and-charging/mppt-solar-charge-controllers.htmll. [Accessed: 02-May-2018].

[7] M. Xia, “On the Efficiency of Far-Field Wireless Power Transfer,” arXiv, 12-Apr-2015. [Online].

Available: https://arxiv.org/pdf/1504.02944.pdf. [Accessed: 04-May-2018].

[8] S. R. Wenham, M. A. Green, M. E. Watt, and R. Corkish, Applied photovoltaics. London: Earthscan,

2009.

[9] “Voltage Divider Calculator,” Ohm's Law Calculator. [Online]. Available:

http://www.ohmslawcalculator.com/voltage-divider-calculator. [Accessed: 03-May-2018].

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33

Appendices

The following list of parts had datasheets that were used throughout the designing, assembling, and

testing of the project:

ZOS-1025+: Voltage-Controlled Oscillator

ZX60-V63+: Power Amplifier

BP 350: Photovoltaic Panel

Genasun GV-4: MPPT Charge Controller

Battery: Sun Xtender PVX-340T AGM Battery

LM7805: 12/5V DC/DC Converter

Powercast P1110 Evaluation Board: Energy Harvester

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FREQUENCY(MHz)

POWEROUTPUT

(dBm)Typ.

TUNINGVOLTAGE

(V)

PHASE NOISE(dBc/Hz)

SSB at offset frequencies: Typ.

PULLING(MHz)pk-pk

(open/short)

PUSHING(MHz/V)

TUNINGSENSITIVITY

(MHz/V)

HARMONICS(dBc)

3 dBMODULATIONBANDWIDTH

(MHz)

DCOPERATING

POWER

Vcc(volts)

Current(mA)Max.Min. Max. Main Aux. Min. Max. 10 kHz 100 kHz 1 MHz Typ. Typ. Typ. Typ. Max. Typ.

685 1025 +8 -13 1 16 -92 -112 -136 0.051 1.00 30 -25 -18 0.1 12 140

ISO 9001 ISO 14001 AS 9100 CERTIFIEDMini-Circuits®

P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500 Fax (718) 332-4661 For detailed performance specs & shopping online see Mini-Circuits web site

The Design Engineers Search Engine Provides ACTUAL Data Instantly From MINI-CIRCUITS At: www.minicircuits.com

minicircuits.com

TM

IF/RF MICROWAVE COMPONENTS

CASE STYLE: BR386

Coaxial

Maximum RatingsOperating Temperature -55°C to 85°C

Storage Temperature -55°C to 100°C

Absolute Max. Supply Voltage (Vcc) +16V

Absolute Max. Tuning Voltage (Vtune) +18V

Electrical Specifications

REV. AM110171ZOS-1025SK/TD/CP/AM081106

Outline Drawing

Dual Output 685 to 1025 MHz

Features• wide bandwidth• linear tuning• excellent harmonic suppression, -25 dBc typ.• rugged shielded case• protected by US Patent, 6,943,629

Applications• auxiliary output freq. monitoring• load insensitive source

Voltage Controlled Oscillator

Outline Dimensions ( )inchmm

electrical schematic

ZOS-1025FREQUENCY vs.TUNING VOLTAGE

0

200

400

600

800

1000

1200

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

V TUNE (V)

FR

EQ

UE

NC

Y (

MH

z)

Connectors Model Price Qty.SMA Z0S-1025(+) $119.95 (1-9)

ZOS-1025+ZOS-1025

+ RoHS compliant in accordance with EU Directive (2002/95/EC)

The +Suffix identifies RoHS Compliance. See our web site for RoHS Compliance methodologies and qualifications.

A B C D E F G H J K L M N P Q R wt3.25 1.38 1.25 .71 1.13 .125 2.25 .71 .41 .98 1.28 2.950 .15 1.100 .14 .150 grams

82.55 35.05 31.75 18.03 28.70 3.18 57.15 18.03 10.41 24.89 32.51 74.93 3.81 27.94 3.56 3.81 180

all specifications: 50 ohm systemPermanent damage may occur if any of these limits are exceeded.

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NotesA. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp

Mini-Circuits®

www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 [email protected] Page 1 of 4

Product OverviewThe ZX60-V63+ (RoHS compliant) uses Mini-Circuits' HBT technology to offer high gain over a broad frequency range and high IP3. Housed in a rugged, cost effective unibody chassis, this amplifier supports a wide variety of applications requiring moderate power output, low distortion and 50 ohm matched input/output ports.

Feature Advantages

High Gain21.9 dB typ. at 0.05 GHz15.4 dB typ. at 6 GHz

High gain reduces number of gain stages, at lower real estate, component count and cost.±1.7 dB gain flatness from 50 MHz to 3 GHz

Broadband: 0.05 to 6 GHzBroadband covering primary wireless communications bands:Cellular, PCS, LTE, WiMAX, UHF, VHF, L band, Satcom, radar, etc.

High IP3 vs. DC power consumption34.2 dBm typical at 0.05 GHz33.3 dBm typical at 0.8 GHz

This model matches good IP3 performance relative to power consumption. The HBT structure provides good linearity over a broad frequency range as shown in the IP3 being typically 16 dB avobe the P1dB point to 0.8 GHz. This feautre makes this amplifier ideal for use in:• driver amplifiers for complex waveform upconverter paths• drivers in linearized transmit systems

Very Small Size, 0.75" x 0.75" The unique unibody construction enables the ZX60-V63+ to be used in compact designs.

The Big Deal• High Gain• Broadband High Dynamic Range• Wideband, 0.05 to 6 GHz

Case Style: GC957

Wideband AmplifierHigh Gain, High IP3

ZX60-V63+50Ω 0.05 to 6 GHz

Key Features

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NotesA. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp

Mini-Circuits®

www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 [email protected] Page 2 of 4

Wideband AmplifierHigh Gain, High IP3

ZX60-V63+

Features• Gain, 21 dB typ. at 0.8 GHz• Flat Gain, ±1.7 dB from 50 to 3000 MHz• High Pout, P1dB, +18.5 dBm typ. at 0.8 GHz• High IP3, 33.3 dBm typ. at 0.8 GHz

Applications• Base station infrastructure• Portable wireless• CATV & DBS• MMDS & Wireless LAN• LTE• SATCOM• Radar

Electrical Specifications at 25°C and 5.0V unless noted

50Ω 0.05 to 6 GHz

Case Style: GC957Connectors ModelSMA ZX60-V63+

REV. AM152326ED-14664/1ZX60-V63+CW/TH/CP150811

Parameter Condition (GHz) Min. Typ. Max. UnitsFrequency Range 0.05 6 GHz

Gain

0.05 21.9

dB

0.8 19.0 21.12.0 20.33.0 19.24.0 18.06.0 15.4

Gain Flatness 0.05 - 3.0 ±1.70.7 - 2.6 ±1.3 dB

Input Return Loss

0.05 14.8

dB

0.8 14.0 23.62.0 16.73.0 10.84.0 10.86.0 13.4

Output Return Loss

0.05 15.7

dB

0.8 12.0 15.52.0 13.63.0 15.94.0 24.16.0 11.8

Output IP3

0.05 34.2

dBm

0.8 33.32.0 31.23.0 28.84.0 27.76.0 23.9

Output Power @ 1 dB compression

0.05 18.4

dBm

0.8 17.0 18.52.0 17.83.0 16.14.0 15.06.0 12.1

Noise Figure

0.05 3.60.8 3.72.0 3.73.0 3.8 dB4.0 3.86.0 4.3

Directivity (Isolation-Gain) 0.05 - 6 4.0 dB

DC Voltage 4.8 5.0 5.2 V

DC Current 58 69 78 mA

+RoHS CompliantThe +Suffix identifies RoHS Compliance. See our web site for RoHS Compliance methodologies and qualifications

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NotesA. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp

Mini-Circuits®

www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 [email protected] Page 3 of 4

ZX60-V63+

Maximum RatingsParameter Ratings

Operating Temperature -40°C to 85°C Case

Storage Temperature -55°C to 100°C

DC Voltage 5.7 V

Input RF Power (no damage) 13 dBm

Power Consumption 0.5 W

Permanent damage may occur if any of these limits are exceeded.

Outline Dimensions ( )inchmm

Outline Drawing

A B C D E F G H J K L M N P Q R wt.74 .75 .46 1.18 .04 .17 .45 .59 .33 .21 .22 .18 1.00 .37 .18 .106 grams

18.80 19.05 11.68 29.97 1.02 4.32 11.43 14.99 8.38 5.33 5.59 4.57 25.40 9.40 4.57 2.69 23.0

NOTE: When soldering the DC connections, caution must be used to avoid overheating the DC terminal. See Application Note. AN-40-010.!

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NotesA. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp

Mini-Circuits®

www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 [email protected] Page 4 of 4

ZX60-V63+Typical Performance Data/Curves

ZX60-V63+GAIN

10

15

20

25

30

0 1000 2000 3000 4000 5000 6000FREQUENCY (MHz)

GA

IN (d

B)

ZX60-V63+DIRECTIVITY

0

5

10

15

0 1000 2000 3000 4000 5000 6000FREQUENCY (MHz)

DIR

EC

TIV

ITY

(dB

)

ZX60-V63+OUTPUT POWER AT 1-dB COMPRESSION

10

15

20

25

30

0 1000 2000 3000 4000 5000 6000FREQUENCY (MHz)

OU

TPU

T P

OW

ER

(dB

m)

ZX60-V63+NOISE FIGURE

0

2

4

6

8

0 1000 2000 3000 4000 5000 6000FREQUENCY (MHz)

NO

ISE

FIG

UR

E (d

B)

ZX60-V63+VSWR

1.0

1.5

2.0

2.5

3.0

0 1000 2000 3000 4000 5000 6000FREQUENCY (MHz)

VS

WR

IN OUT

ZX60-V63+IP3

101520253035404550

0 1000 2000 3000 4000 5000 6000FREQUENCY (MHz)

IP3

(dB

m)

FREQUENCY(MHz)

GAIN (dB)

DIRECTIVITY (dB)

VSWR (:1)

POUTat 1dB

COMPR.(dBm)

NOISEFIGURE

(dB)

OUTPUTIP3

(dBm)

IN OUT 50.00 21.87 2.52 1.44 1.39 18.4 3.6 34.2 500.00 21.28 3.10 1.18 1.31 18.5 3.6 33.7 1000.00 21.04 3.28 1.12 1.46 18.5 3.7 32.3 1400.00 20.80 3.36 1.14 1.54 18.5 3.7 32.2 1600.00 20.66 3.38 1.19 1.55 18.4 3.7 31.8 1800.00 20.49 3.46 1.26 1.55 18.3 3.7 31.8 2000.00 20.29 3.59 1.34 1.53 17.8 3.7 31.2 2400.00 19.88 3.84 1.52 1.47 17.4 3.7 30.5 3000.00 19.21 4.43 1.81 1.38 16.1 3.8 28.8 3400.00 18.74 4.89 1.89 1.31 15.8 3.8 28.8 3800.00 18.22 5.37 1.84 1.19 15.3 3.9 28.0 4000.00 17.96 5.65 1.81 1.13 15.0 3.8 27.7 4600.00 17.09 6.64 1.62 1.21 14.1 3.9 26.4 5000.00 16.59 7.17 1.51 1.35 13.5 4.0 25.7 5500.00 16.23 7.59 1.47 1.61 12.8 4.2 24.8 6000.00 15.41 8.40 1.54 1.69 12.1 4.3 23.9

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6802.0036 BP350J Rev. C 01/10

High-efficiency photovoltaic module using silicon nitride multicrystalline silicon cells. Performance

Rated power (Pmax) 50W Power tolerance ± 10% Nominal voltage 12V Limited Warranty1 25 years

Configuration

J Clear universal frame and standard J-Box Electrical Characteristics2 BP 350

Maximum power (Pmax)3 50W

Voltage at Pmax (Vmp) 17.5V Current at Pmax (Imp) 2.9A Warranted minimum Pmax 45W Short-circuit current (Isc) 3.2A Open-circuit voltage (Voc) 21.8V Temperature coefficient of Isc (0.065±0.015)%/ °C Temperature coefficient of Voc -(80±10)mV/°C Temperature coefficient of power -(0.5±0.05)%/ °C NOCT (Air 20°C; Sun 0.8kW/m2 ; wind 1m/s) 47±2°C Maximum series fuse rating 20A Maximum system voltage 50V (U.S. NEC rating)

Mechanical Characteristics

Dimensions Length: 839mm (33”) Width: 537mm (21.1”) Depth: 50mm (1.97”)

Weight 6.0 kg (13.2 pounds)

Solar Cells 72 cells (42mm x 125mm) in a 4x18 matrix connected in 2 parallel strings of 36 in series

Junction Box J-Version junction box with 4-terminal connection block; IP 65, accepts PG 13.5,

M20, ½ inch conduit, or cable fittings accepting 6-12mm diameter cable. Terminals accept 2.5 to 10mm2 (8 to 14 AWG) wire.

Diodes One 9A, 45V Schottky by-pass diode included

Construction Front: High-transmission 3mm (1/8th inch) tempered glass; Back: White Polyester;

Encapsulant: EVA

Frame Clear anodized aluminum alloy type 6063T6 Universal frame; Color: silver

BP 350 50 Watt Photovoltaic Module

©BP Solar 2010

1. Module Warranty: 25-year limited warranty of 85% power output; 12-year limited warranty of 93% power output; 5-year limited warranty of materials and workmanship. See your local representative for full terms of these warranties. 2. This data represents the performance of typical BP modules, and are based on measurements made in accordance with ASTM E1036 corrected to SRC (STC.) 3. During the stabilization process that occurs during the first few months of deployment, module power may decrease by approx. 1% from typical Pmax.

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6802.0036 BP350J Rev. C 01/10

Quality and Safety

Listed to UL 1703 Standard for safety by Intertek ETL (Class C fire rating)

Approved by Intertek ETL for use in NEC Class 1, Division 2, Groups A to D hazardous locations.

Qualification Test Parameters

Temperature cycling range -40°C to +85°C (-40°F to 185°F) Humidity freeze, damp heat 85% RH Static load front and back (e.g. wind) 50psf (2400 pascals) Front loading (e.g. snow) 113psf (5400 pascals) Hailstone impact 25mm (1 inch) at 23 m/s (52mph)

Module Diagram Dimensions in brackets are in inches. Un-bracketed dimensions are in millimeters. Overall tolerances ±3mm (1/8”)

72 [2.8]4 PLCS

581 [22.9]2 PLCS

129 [5.1]

839 [33.0]MODULE LENGTH

WITH SCREWHEADS

Ø6.8MTG. HOLES

8 PLACES

57 [2.3]INCLUDINGSCREW HEAD4 PLCS

2.8 MAXSCREW HEADPROJECTION

8 PLACES

508 [20.0]

GROUND HOLE2 PLACES

537 [21.2]

Back View

Front View

A A

11.1 [0.44]

27 [1.1]

Section A - A

50 [2.0] 2.4 [0.09]

JUNCTION BOX

Top View (Lid open)

BPJB(+)

BP350J

Included with each module: self-tapping grounding screw, instruction sheet, and warranty document.

Note: This publication summarizes product warranty and specifications, which are subject to change without notice. Additional information may be found on our web site: www.bpsolar.com

©BP Solar 2010

BP350 I-V Curves

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

0 10 20 30Voltage (V)

Cur

rent

(A)

t=0Ct=25Ct=50Ct=75C

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GENASUN GV-4 (ALL MODELS) MANUAL, REVISION 2.0 | 01.2018

GV-4-Pb-12V: 12V Lead-Acid/AGM/Gel/Sealed/Flooded

GV-4P-Pb-12V: 12V Lead-Acid/AGM/Gel/Sealed/Flooded

GV-4-Pb-CV: 12V Custom Multi-Stage Lead-Acid/AGM/Gel/

Sealed/Flooded

GV-4 Manual

For models:

Solar Charge Controller with Maximum Power Point Tracking

IMPORTANT SAFETY INSTRUCTIONS | SAVE THESE INSTRUCTIONS

4A / 50Wwww.genasun.com

GENASUN c/o BLUE SKY ENERGY

2598 FORTUNE WAY • SUITE KVISTA, CA 92081 • USA

Page 47: Solar-Powered RF Signal Generation for Energy Harvester ...cegt201.bradley.edu/projects/proj2018/pvrfeh/ProjectReport2017-201… · I Abstract In this project, a solar-powered radio

This manual contains important instructions for the GV-4-Pb-12V, GV-4P-Pb-12V, and GV-4-Pb-CV solar charge controller that shall be followed during installation and maintenance.

The GV-4 is intended for charging 12V Lead-Acid, AGM, Gel, Sealed, and Flooded batteries. Consult your battery charging specifications to ensure that the GV-4 is compatible with your chosen batteries. The GV-4 does not include a fuse. Overcurrent protection suitable for the application must be provided by the user.WARNING: EXPLOSION HAZARD. DO NOT CONNECT OR DISCONNECT WHEN ENERGIZED. DO NOT DISCONNECT WHILE THE CIRCUIT IS LIVE OR UNLESS THE AREA IS FREE OF IGNITABLE CONCENTRATIONS.ATTENTION: RISQUE D'EXPLOSION. NE PAS CONNECTER NI DÉCONNECTER PAS LORSQU'IL EST SOUS TENSION. NE PAS CONNECTER LE CIRCUIT ALORS QUE EST VIVANT OU A MOINS QUE LA ZONE EST LIBRE DE CONCENTRATIONS IGNITAIRES.

CAUTION: INTERNAL TEMPERATURE COMPENSATION. RISK OF FIRE, USE WITHIN 0.3 m (1 ft) of BATTERIES. Lead-acid batteries can create explosive gases. Short circuits can draw thousands of amps from a battery. Carefully read and follow all instructions supplied with the battery. Use only 12V lead-acid batteries with the GV-4-Pb-12V and GV-4-Pb-CV.

DO NOT SHORT CIRCUIT the solar array when plugged into the controller. DO NOT MEASURE SHORT CIRCUIT CURRENT of the array while connected to the controller. This may damage the controller, and such damage will not be covered under warranty.

Grounding is not necessary for operation and is at the user's discretion. If the GV-4 is to be used with a solar array electrically connected to earth ground, please note the following: WARNING: THIS UNIT IS NOT PROVIDED WITH A GFDI DEVICE. Consult Article 690 of the National Electrical Code (or the standards in force at the installation location) to determine whether a GFDI is necessary for your installation.

Safety Instructions:

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WARNING: THIS UNIT IS NOT PROVIDED WITH DISCONNECT DEVICES. Consult Article 690 of the National Electrical Code (or the standards in force at the installation location) to determine whether disconnect devices are necessary for your installation.

Use only 12-30 AWG (3.0 mm2 max) copper conductors suitable for a minimum of 60 degrees C. If operation at high power or at high ambient temperatures is expected, wire with a higher temperature rating may be necessary.Recommended terminal block tightening torque: 3-5 in-lbs, 0.35-0.55 Nm.

Inspection & Maintenance

No user-serviceable parts inside.

Inspect the controller at least once per year to ensure proper performance.• Check for animal or insect damage.• Inspect for corrosion / water damage.• Inspect the security of all connections.• Ensure the solar array does not exceed the maximum input voltage.• Repair and clean as necessary.

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Installation & System Connections:

MOUNTINGMount the controller near your battery securely using the holes provided on the enclosure’s flanges

or with a means appropriate to the application.

• Mount near the battery (use within 0.3 m (1 ft) of batteries. See Caution, p.2).

• The GV-4 can be mounted in any orientation on the floor or wall. We recommend a position in

which all labels are clearly visible.

• Do not expose to water.

• Do not mount in direct sunlight or near a source of heat.

• Allow adequate airflow around the controller to achieve maximum output capability.

• For outdoor use, the controller must be housed in an enclosure providing protection at least

equivalent to NEMA Type 3.

1

• Connections should be made according to Article 690 of the National Electrical Code

(NFPA 70) or the standards in force at the installation location.

• Electrical connections may be made in any order; however the sequence below is

recommended.

Note*: The positive or negative battery cable must be protected by a fast-acting fuse or circuit breaker of 10A or less, rated for the maximum battery voltage and connected close to the bat-tery terminal or power distribution block. This fuse will protect the wiring in the event of a short circuit or controller damage.

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BATTERYPANEL

GV-4

*FUSE

2

3

CONNECTING THE SOLAR PANELConnect the solar panel to the +PANEL and –PANEL terminals.

• In most applications, the panel should be connected only to the GV-4.

• Never connect the panel negative to the battery negative, as your batteries may

be damaged.

• Do not use blocking diodes for single-panel installations. The GV-4 prevents

reverse-current flow.

• If multiple panels are being used in parallel, blocking diodes are recommended in

series with each panel, unless the panel manufacturer recommends otherwise.

• Solar panel voltage rises in cold weather. Check that the solar panel open circuit

voltage (Voc) will remain below the maximum input voltage of the GV-4 at the

coldest possible expected temperature.

CONNECTING THE BATTERYConnect the battery to the +BATT and –BATT terminals.

• A small spark while connecting the battery is ok.

• Any loads should be connected directly to the battery. The GV-4 does not provide

protection against over-discharge.

CAUTION, RISK OF FIRE OR EXPLOSION: Do not make the final battery connection

near lead-acid batteries that have recently been charging.

The GV-4 has a MULTICOLOR LED.Learn about this indicator on the following page.

Note: Drip loop to protect charge controller from water.

Note: In the GV-4, the positive side of the battery is connected internally to the

positive side of the solar panel.

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LED RUN/CHARGE INDICATIONStandby: The battery is connected properly and ready to charge when solar panel power is available.

8-10 SEC. BETWEEN GREEN BLINKS

Charging (low current, less than 0.15A):

4-5 SEC. BETWEEN GREEN BLINKS

Charging (between 0.15A - 1.5A):

FAST GREEN BLINKS

Charging (high current, more than 1.5A):

LONGER, SLOWER GREEN BLINKS

Charging (current limit): charging at current limit. The GV-4 is overloaded and limiting charging current.

LONG, THEN SHORT GREEN BLINKS

Battery Charged: The battery is in the absorption or float charging stage.

SOLID GREEN LED

LED ERROR INDICATION

Overheat: The controller’s internal temperature is too high.

SETS OF 2 RED BLINKS.

Overload: This could be caused by changing the solar panel connections while the controller is operating.

SETS OF 3 RED BLINKS.

Battery voltage too low: The controller cannot begin charging due to low battery voltage. If the nominal battery voltage is correct (12V), charge the battery by some other means before use.

SETS OF 4 RED BLINKS

Battery voltage too high: If the nominal battery voltage is correct (12V), check the functioning of other chargers that may be connected to the system.

SETS OF 5 RED BLINKS.

Panel voltage too high: Only 12V nominal solar panels may be used with this controller.

SETS OF 6 RED BLINKS.

Internal Error: Contact your dealer for assistance.

2 LONG BLINKS, FOLLOWED BY ANY NUMBER

OF SHORT BLINKS.

The GV-4 has a MULTICOLOR LED

Status Indication:

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TroubleshootingIf the LED Indicator will not light, or displays an indication not listed in this manual:• Verify correct battery polarity;• Check that there is a solid electrical connection to the battery;• Check that battery voltage appears on the GV-4 battery terminal screws;• Check the GV-4 terminal area for evidence of water or mechanical damage.The GV-4 will not operate without a battery. If the system appears to be overcharging or the GV-4 will not begin charging, ensure that the solar panel is wired only to the GV-4, and in particular that the solar panel negative terminal is not connected to ground (battery negative). If the GV-4 does not appear to be charging, note that the GV-4 waits up to one minute before trying to restart if is has shut down due to lack of power from the solar panel. For more in-depth system troubleshooting, please visit the support area of our website: www.genasun.com/support/

Specifications: GV-4-Pb-12V

Maximum Recommended Panel Power: 50W

Rated Battery (Output) Current: 4A

Nominal Battery Voltage: 12V

Maximum Input Voltage: 27V

Recommended Max Panel Voc at STC: 22V

Minimum Battery Voltage for Operation: 7.2V

Input Voltage Range: 0-27V

Maximum Input Short Circuit Current*: 4A

Maximum Input Current**: 7A

*Panel Isc. Maximum input power and maximum input voltage requirements must also be respected. **Maximum current that the controller could draw from an unlimited source.

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Copyright © 2018 Genasun. All rights reserved. Changes are periodically made to the information herein which will be incorporated in revised editions of this publication. Genasun may make

changes or improvements to the product(s) described in this publication at any time and without notice.

Charge Profile: Multi-Stage with Temperature Compensation

Absorption Voltage: 14.2V

Absorption Time: 2 Hours

Float Voltage: 13.8V

Charging Output Voltage Range: 7.2-18V

Battery Temperature Compensation: -28mV/°C

Operating Temperature: -40°C – 85°C

Maximum Full Power Ambient: 50°C

Electrical Efficiency: 96% - 99.85% typical

Tracking Efficiency: 99% typical

MPPT Tracking Speed: 15Hz

Operating Consumption: 0.125mA (125uA)

Night Consumption: 0.09mA (90uA)

Environmental Protection: IP40, Nickel-Plated Brass & Stainless Hardware

Connection: 4-position terminal block for 12-30AWG wire

Weight: 2.8 oz., 80 g

Dimensions: 4.3 x 2.2 x 0.9", 11 x 5.6 x 2.5 cm

Warranty: 5 years

Specifications (cont.): GV-4-Pb-12V

Certifications:

Page 54: Solar-Powered RF Signal Generation for Energy Harvester ...cegt201.bradley.edu/projects/proj2018/pvrfeh/ProjectReport2017-201… · I Abstract In this project, a solar-powered radio

1216

2009 San Bernardino Road | West Covina, CA 91790

626.813.1234 626.813.1235

www.sunxtender.comA Division of Concorde Battery Corp.

VRLA-AGM Deep Cycle Battery for Off Grid and Grid Tied Systems.

Sun Xtender batteries provide safe, reliable and long lasting power. Environmentally friendly, there is no exposed lead on Sun Xtender batteries and they are 100 percent recyclable. Sustainable, Clean, Renewable Energy Storage.

Since 1987, Sun Xtender Battery has been designing valve regulated lead acid batteries with AGM construction (VRLA-AGM).The non-spillable construction prohibits any electrolyte leaking or spewing, allowing the battery to be used upright or on its end or side. The maintenance free AGM design means no water replenishment ever.

Utilizing pure lead calcium grids, the plates are thicker than the industry standard for longer cycle life, increased reliability and power. The low impedance AGM design allows for excellent charge acceptance and there is no current limit required with controlled voltage charging.

PVX-340T and the complete Sun Xtender Battery product line features proprietary PolyGuard® Microporous Polyethylene Separators, shielding the positive plates against shorting, shock or vibration. No other manufacturers offer this dual layer insulation protection feature.

Sun Xtender Battery covers and containers are uniquely molded with high impact, reinforced copolymer polypropylene and are designed with thick end walls to prevent bulging. The copper alloy T Terminals are corrosion resistant and are supplied with silicon bronze bolts and washers.

All Sun Xtender Batteries ship Hazmat Exempt.

PVX-340T SpecificationsVoltage 12 Volts

Industry Reference U1

Maximum Weight 25 LB / 11.4 KG

Nominal Capacity Ampere Hours @ 25° C (77° F) to 1.75 volts per cell

1 Hr. Rate 2 Hr. Rate 4 Hr. Rate 8 Hr. Rate 24 Hr. Rate 100 Hr. Rate

21 Ah 27 Ah 28 Ah 30 Ah 34 Ah 37 Ah

Specifications are subject to change without notice. The data/information contained herein has been reviewed & approved for general release on the basis that this document contains no export controlled information.

PVX-340T

7.71(195.9 MM)

6.89(175.0 MM)

7.51(190.9 MM)

6.19(157.2 MM)

6.69(169.9 MM)

5.18(131.6 MM)

4.97(126.2 MM)

2 M6 TERMINALS

PVX-340T SOLAR BATTERY

M6 Threaded Insert Standard Terminals (Copper Alloy)M6 Threaded Inserts are used for PVX-340T & PVX-420T only. All batteries with a “T” at the end of the part number incorporate M8 threaded insert terminals, all batteries are supplied with silicon bronze bolts, nuts, and washers required for installation.

C: 0 M: 35 Y: 72 K: 0 C: 100 M: 0 Y: 0 K: 0

SOLAR BATTERY

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©2006 Fairchild Semiconductor Corporation

1

www.fairchildsemi.com

LM78XX/LM78XXA Rev. 1.0.1

LM

78XX

/LM

78XX

A 3-Term

inal 1A

Po

sitive Voltag

e Reg

ulato

r

May 2006

LM78XX/LM78XXA3-Terminal 1A Positive Voltage Regulator

Features

Output Current up to 1A

Output Voltages of 5, 6, 8, 9, 10, 12, 15, 18, 24

Thermal Overload Protection

Short Circuit Protection

Output Transistor Safe Operating Area Protection

General Description

The LM78XX series of three terminal positive regulatorsare available in the TO-220 package and with severalfixed output voltages, making them useful in a widerange of applications. Each type employs internal currentlimiting, thermal shut down and safe operating area pro-tection, making it essentially indestructible. If adequateheat sinking is provided, they can deliver over 1A outputcurrent. Although designed primarily as fixed voltageregulators, these devices can be used with external com-ponents to obtain adjustable voltages and currents.

Ordering Information

Product Number Output Voltage Tolerance Package Operating Temperature

LM7805CT

±

4% TO-220 -40°C to +125°C

LM7806CT

LM7808CT

LM7809CT

LM7810CT

LM7812CT

LM7815CT

LM7818CT

LM7824CT

LM7805ACT

±

2% 0°C to +125°C

LM7806ACT

LM7808ACT

LM7809ACT

LM7810ACT

LM7812ACT

LM7815ACT

LM7818ACT

LM7824ACT

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2

www.fairchildsemi.com

LM78XX/LM78XXA Rev. 1.0.1

LM

78XX

/LM

78XX

A 3-Term

inal 1A

Po

sitive Voltag

e Reg

ulato

r

Block Diagram

Figure 1.

Pin Assignment

Figure 2.

Absolute Maximum Ratings

Absolute maximum ratings are those values beyond which damage to the device may occur. The datasheet specifications should be met, without exception, to ensure that the system design is reliable over its power supply, temperature, and output/input loading variables. Fairchild does not recommend operation outside datasheet specifications.

Symbol Parameter Value Unit

V

I

Input Voltage V

O

= 5V to 18V 35 V

V

O

= 24V 40 V

R

θ

JC

Thermal Resistance Junction-Cases (TO-220) 5 °C/W

R

θ

JA

Thermal Resistance Junction-Air (TO-220) 65 °C/W

T

OPR

Operating Temperature Range

LM78xx -40 to +125 °C

LM78xxA 0 to +125

T

STG

Storage Temperature Range -65 to +150 °C

StartingCircuit

Input

1

ReferenceVoltage

CurrentGenerator

SOAProtection

ThermalProtection

Series PassElement

ErrorAmplifier

Output

3

GND

2

11. Input2. GND3. Output

GND

TO-220

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3

www.fairchildsemi.com

LM78XX/LM78XXA Rev. 1.0.1

LM

78XX

/LM

78XX

A 3-Term

inal 1A

Po

sitive Voltag

e Reg

ulato

r

Electrical Characteristics (LM7805)

Refer to the test circuits. -40°C

<

T

J

<

125°C, I

O

= 500mA, V

I

= 10V, C

I

= 0.1

µ

F, unless otherwise specified.

Notes:

1. Load and line regulation are specified at constant junction temperature. Changes in V

O

due to heating effects mustbe taken into account separately. Pulse testing with low duty is used.

2. These parameters, although guaranteed, are not 100% tested in production.

Symbol Parameter Conditions Min. Typ. Max. Unit

V

O

Output Voltage T

J

= +25°C 4.8 5.0 5.2 V

5mA

I

O

1A, P

O

15W, V

I

= 7V to 20V4.75 5.0 5.25

Regline Line Regulation

(1)

T

J

= +25°C V

O

= 7V to 25V – 4.0 100 mV

V

I

= 8V to 12V – 1.6 50.0

Regload Load Regulation

(1)

T

J

= +25°C I

O

= 5mA to 1.5A – 9.0 100 mV

I

O

= 250mA to 750mA – 4.0 50.0

I

Q

Quiescent Current T

J

= +25°C – 5.0 8.0 mA

I

Q

Quiescent Current Change I

O

= 5mA to 1A – 0.03 0.5 mA

V

I

= 7V to 25V – 0.3 1.3

V

O

/

T Output Voltage Drift

(2)

I

O

= 5mA – -0.8 – mV/°C

V

N

Output Noise Voltage f = 10Hz to 100kHz, T

A

= +25°C – 42.0 –

µ

V/V

O

RR Ripple Rejection

(2)

f = 120Hz, V

O

= 8V to 18V 62.0 73.0 – dB

V

DROP

Dropout Voltage I

O

= 1A, T

J

= +25°C – 2.0 – V

r

O

Output Resistance

(2)

f = 1kHz – 15.0 – m

Ω

I

SC

Short Circuit Current V

I

= 35V, T

A

= +25°C – 230 – mA

I

PK

Peak Current

(2)

T

J

= +25°C – 2.2 – A

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4

www.fairchildsemi.com

LM78XX/LM78XXA Rev. 1.0.1

LM

78XX

/LM

78XX

A 3-Term

inal 1A

Po

sitive Voltag

e Reg

ulato

r

Electrical Characteristics (LM7806)

(Continued)Refer to the test circuits. -40°C

<

T

J

<

125°C, I

O

= 500mA, V

I

= 11V, C

I

= 0.33

µ

F, C

O

= 0.1

µ

F, unless otherwise specified.

Notes:

3. Load and line regulation are specified at constant junction temperature. Changes in V

O

due to heating effects mustbe taken into account separately. Pulse testing with low duty is used.

4. These parameters, although guaranteed, are not 100% tested in production.

Symbol Parameter Conditions Min Typ. Max. Unit

V

O

Output Voltage T

J

= +25°C 5.75 6.0 6.25 V

5mA

I

O

1A, P

O

15W, V

I

= 8.0V to 21V5.7 6.0 6.3

Regline Line Regulation

(3)

T

J

= +25°C V

I

= 8V to 25V – 5.0 120 mV

V

I

= 9V to 13V – 1.5 60.0

Regload Load Regulation

(3)

T

J

= +25°C I

O

= 5mA to 1.5A – 9.0 120 mV

I

O

= 250mA to 750mA – 3.0 60.0

I

Q

Quiescent Current T

J

= +25°C – 5.0 8.0 mA

I

Q

Quiescent Current Change

I

O

= 5mA to 1A – – 0.5 mA

V

I

= 8V to 25V – – 1.3

V

O

/

T Output Voltage Drift

(4)

I

O

= 5mA – -0.8 – mV/°C

V

N

Output Noise Voltage f = 10Hz to 100kHz, T

A

= +25°C – 45.0 –

µ

V/V

O

RR Ripple Rejection

(4)

f = 120Hz, V

O

= 8V to 18V 62.0 73.0 – dB

VDROP Dropout Voltage IO = 1A, TJ = +25°C – 2.0 – V

rO Output Resistance(4) f = 1kHz – 19.0 – mΩ

ISC Short Circuit Current VI = 35V, TA = +25°C – 250 – mA

IPK Peak Current(4) TJ = +25°C – 2.2 – A

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5 www.fairchildsemi.comLM78XX/LM78XXA Rev. 1.0.1

LM

78XX

/LM

78XX

A 3-Term

inal 1A

Po

sitive Voltag

e Reg

ulato

r

Electrical Characteristics (LM7808) (Continued)Refer to the test circuits. -40°C < TJ < 125°C, IO = 500mA, VI = 14V, CI = 0.33µF, CO = 0.1µF, unless otherwise specified.

Notes:5. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must

be taken into account separately. Pulse testing with low duty is used.6. These parameters, although guaranteed, are not 100% tested in production.

Symbol Parameter Conditions Min. Typ. Max. Unit

VO Output Voltage TJ = +25°C 7.7 8.0 8.3 V

5mA ≤ IO ≤ 1A, PO ≤ 15W, VI = 10.5V to 23V

7.6 8.0 8.4

Regline Line Regulation(5) TJ = +25°C VI = 10.5V to 25V – 5.0 160 mV

VI = 11.5V to 17V – 2.0 80.0

Regload Load Regulation(5) TJ = +25°C IO = 5mA to 1.5A – 10.0 160 mV

IO = 250mA to 750mA – 5.0 80.0

IQ Quiescent Current TJ = +25°C – 5.0 8.0 mA

∆IQ Quiescent Current Change IO = 5mA to 1A – 0.05 0.5 mA

VI = 10.5V to 25V – 0.5 1.0

∆VO/∆T Output Voltage Drift(6) IO = 5mA – -0.8 – mV/°C

VN Output Noise Voltage f = 10Hz to 100kHz, TA = +25°C – 52.0 – µV/VO

RR Ripple Rejection(6) f = 120Hz, VO = 11.5V to 21.5V 56.0 73.0 – dB

VDROP Dropout Voltage IO = 1A, TJ = +25°C – 2.0 – V

rO Output Resistance(6) f = 1kHz – 17.0 – mΩ

ISC Short Circuit Current VI = 35V, TA = +25°C – 230 – mA

IPK Peak Current(6) TJ = +25°C – 2.2 – A

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6 www.fairchildsemi.comLM78XX/LM78XXA Rev. 1.0.1

LM

78XX

/LM

78XX

A 3-Term

inal 1A

Po

sitive Voltag

e Reg

ulato

r

Electrical Characteristics (LM7809) (Continued)Refer to the test circuits. -40°C < TJ < 125°C, IO = 500mA, VI = 15V, CI = 0.33µF, CO = 0.1µF, unless otherwise specified.

Notes:7. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must

be taken into account separately. Pulse testing with low duty is used.8. These parameters, although guaranteed, are not 100% tested in production.

Symbol Parameter Conditions Min. Typ. Max. Unit

VO Output Voltage TJ = +25°C 8.65 9.0 9.35 V

5mA ≤ IO ≤ 1A, PO ≤ 15W, VI = 11.5V to 24V

8.6 9.0 9.4

Regline Line Regulation(7) TJ = +25°C VI = 11.5V to 25V – 6.0 180 mV

VI = 12V to 17V – 2.0 90.0

Regload Load Regulation(7) TJ = +25°C IO = 5mA to 1.5A – 12.0 180 mV

IO = 250mA to 750mA – 4.0 90.0

IQ Quiescent Current TJ = +25°C – 5.0 8.0 mA

∆IQ Quiescent Current Change IO = 5mA to 1A – – 0.5 mA

VI = 11.5V to 26V – – 1.3

∆VO/∆T Output Voltage Drift(8) IO = 5mA – -1.0 – mV/°C

VN Output Noise Voltage f = 10Hz to 100kHz, TA = +25°C – 58.0 – µV/VO

RR Ripple Rejection(8) f = 120Hz, VO = 13V to 23V 56.0 71.0 – dB

VDROP Dropout Voltage IO = 1A, TJ = +25°C – 2.0 – V

rO Output Resistance(8) f = 1kHz – 17.0 – mΩ

ISC Short Circuit Current VI = 35V, TA = +25°C – 250 – mA

IPK Peak Current(8) TJ = +25°C – 2.2 – A

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Electrical Characteristics (LM7810) (Continued)Refer to the test circuits. -40°C < TJ < 125°C, IO = 500mA, VI = 16V, CI = 0.33µF, CO = 0.1µF, unless otherwise specified.

Notes:9. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must

be taken into account separately. Pulse testing with low duty is used.10. These parameters, although guaranteed, are not 100% tested in production.

Symbol Parameter Conditions Min. Typ. Max. Unit

VO Output Voltage TJ = +25°C 9.6 10.0 10.4 V

5mA ≤ IO ≤ 1A, PO ≤ 15W, VI = 12.5V to 25V

9.5 10.0 10.5

Regline Line Regulation(9) TJ = +25°C VI = 12.5V to 25V – 10.0 200 mV

VI = 13V to 25V – 3.0 100

Regload Load Regulation(9) TJ = +25°C IO = 5mA to 1.5A – 12.0 200 mV

IO = 250mA to 750mA – 4.0 400

IQ Quiescent Current TJ = +25°C – 5.1 8.0 mA

∆IQ Quiescent Current Change IO = 5mA to 1A – – 0.5 mA

VI = 12.5V to 29V – – 1.0

∆VO/∆T Output Voltage Drift(10) IO = 5mA – -1.0 – mV/°C

VN Output Noise Voltage f = 10Hz to 100kHz, TA = +25°C – 58.0 – µV/VO

RR Ripple Rejection(10) f = 120Hz, VO = 13V to 23V 56.0 71.0 – dB

VDROP Dropout Voltage IO = 1A, TJ = +25°C – 2.0 – V

rO Output Resistance(10) f = 1kHz – 17.0 – mΩ

ISC Short Circuit Current VI = 35V, TA = +25°C – 250 – mA

IPK Peak Current(10) TJ = +25°C – 2.2 – A

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Electrical Characteristics (LM7812) (Continued)Refer to the test circuits. -40°C < TJ < 125°C, IO = 500mA, VI = 19V, CI = 0.33µF, CO = 0.1µF, unless otherwise specified.

Notes:11. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must

be taken into account separately. Pulse testing with low duty is used.12. These parameters, although guaranteed, are not 100% tested in production.

Symbol Parameter Conditions Min. Typ. Max. Unit

VO Output Voltage TJ = +25°C 11.5 12.0 12.5 V

5mA ≤ IO ≤ 1A, PO ≤ 15W, VI = 14.5V to 27V

11.4 12.0 12.6

Regline Line Regulation(11) TJ = +25°C VI = 14.5V to 30V – 10.0 240 mV

VI = 16V to 22V – 3.0 120

Regload Load Regulation(11) TJ = +25°C IO = 5mA to 1.5A – 11.0 240 mV

IO = 250mA to 750mA – 5.0 120

IQ Quiescent Current TJ = +25°C – 5.1 8.0 mA

∆IQ Quiescent Current Change IO = 5mA to 1A – 0.1 0.5 mA

VI = 14.5V to 30V – 0.5 1.0

∆VO/∆T Output Voltage Drift(12) IO = 5mA – -1.0 – mV/°C

VN Output Noise Voltage f = 10Hz to 100kHz, TA = +25°C – 76.0 – µV/VO

RR Ripple Rejection(12) f = 120Hz, VI = 15V to 25V 55.0 71.0 – dB

VDROP Dropout Voltage IO = 1A, TJ = +25°C – 2.0 – V

rO Output Resistance(12) f = 1kHz – 18.0 – mΩ

ISC Short Circuit Current VI = 35V, TA = +25°C – 230 – mA

IPK Peak Current(12) TJ = +25°C – 2.2 – A

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Electrical Characteristics (LM7815) (Continued)Refer to the test circuits. -40°C < TJ < 125°C, IO = 500mA, VI = 23V, CI = 0.33µF, CO = 0.1µF, unless otherwise specified.

Notes:13. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must

be taken into account separately. Pulse testing with low duty is used.14. These parameters, although guaranteed, are not 100% tested in production.

Symbol Parameter Conditions Min. Typ. Max. Unit

VO Output Voltage TJ = +25°C 14.4 15.0 15.6 V

5mA ≤ IO ≤ 1A, PO ≤ 15W, VI = 17.5V to 30V

14.25 15.0 15.75

Regline Line Regulation(13) TJ = +25°C VI = 17.5V to 30V – 11.0 300 mV

VI = 20V to 26V – 3.0 150

Regload Load Regulation(13) TJ = +25°C IO = 5mA to 1.5A – 12.0 300 mV

IO = 250mA to 750mA – 4.0 150

IQ Quiescent Current TJ = +25°C – 5.2 8.0 mA

∆IQ Quiescent Current Change IO = 5mA to 1A – – 0.5 mA

VI = 17.5V to 30V – – 1.0

∆VO/∆T Output Voltage Drift(14) IO = 5mA – -1.0 – mV/°C

VN Output Noise Voltage f = 10Hz to 100kHz, TA = +25°C – 90.0 – µV/VO

RR Ripple Rejection(14) f = 120Hz, VI = 18.5V to 28.5V 54.0 70.0 – dB

VDROP Dropout Voltage IO = 1A, TJ = +25°C – 2.0 – V

rO Output Resistance(14) f = 1kHz – 19.0 – mΩ

ISC Short Circuit Current VI = 35V, TA = +25°C – 250 – mA

IPK Peak Current(14) TJ = +25°C – 2.2 – A

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Electrical Characteristics (LM7818) (Continued)Refer to the test circuits. -40°C < TJ < 125°C, IO = 500mA, VI = 27V, CI = 0.33µF, CO = 0.1µF, unless otherwise specified.

Notes:15. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must

be taken into account separately. Pulse testing with low duty is used.16. These parameters, although guaranteed, are not 100% tested in production.

Symbol Parameter Conditions Min. Typ. Max. Unit

VO Output Voltage TJ = +25°C 17.3 18.0 18.7 V

5mA ≤ IO ≤ 1A, PO ≤ 15W, VI = 21V to 33V

17.1 18.0 18.9

Regline Line Regulation(15) TJ = +25°C VI = 21V to 33V – 15.0 360 mV

VI = 24V to 30V – 5.0 180

Regload Load Regulation(15) TJ = +25°C IO = 5mA to 1.5A – 15.0 360 mV

IO = 250mA to 750mA – 5.0 180

IQ Quiescent Current TJ = +25°C – 5.2 8.0 mA

∆IQ Quiescent Current Change IO = 5mA to 1A – – 0.5 mA

VI = 21V to 33V – – 1.0

∆VO/∆T Output Voltage Drift(16) IO = 5mA – -1.0 – mV/°C

VN Output Noise Voltage f = 10Hz to 100kHz, TA = +25°C – 110 – µV/VO

RR Ripple Rejection(16) f = 120Hz, VI = 22V to 32V 53.0 69.0 – dB

VDROP Dropout Voltage IO = 1A, TJ = +25°C – 2.0 – V

rO Output Resistance(16) f = 1kHz – 22.0 – mΩ

ISC Short Circuit Current VI = 35V, TA = +25°C – 250 – mA

IPK Peak Current(16) TJ = +25°C – 2.2 – A

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Electrical Characteristics (LM7824) (Continued)Refer to the test circuits. -40°C < TJ < 125°C, IO = 500mA, VI = 33V, CI = 0.33µF, CO = 0.1µF, unless otherwise specified.

Notes:17. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must

be taken into account separately. Pulse testing with low duty is used.18. These parameters, although guaranteed, are not 100% tested in production.

Symbol Parameter Conditions Min. Typ. Max. Unit

VO Output Voltage TJ = +25°C 23.0 24.0 25.0 V

5mA ≤ IO ≤ 1A, PO ≤ 15W, VI = 27V to 38V

22.8 24.0 25.25

Regline Line Regulation(17) TJ = +25°C VI = 27V to 38V – 17.0 480 mV

VI = 30V to 36V – 6.0 240

Regload Load Regulation(17) TJ = +25°C IO = 5mA to 1.5A – 15.0 480 mV

IO = 250mA to 750mA – 5.0 240

IQ Quiescent Current TJ = +25°C – 5.2 8.0 mA

∆IQ Quiescent Current Change IO = 5mA to 1A – 0.1 0.5 mA

VI = 27V to 38V – 0.5 1.0

∆VO/∆T Output Voltage Drift(18) IO = 5mA – -1.5 – mV/°C

VN Output Noise Voltage f = 10Hz to 100kHz, TA = +25°C – 60.0 – µV/VO

RR Ripple Rejection(18) f = 120Hz, VI = 28V to 38V 50.0 67.0 – dB

VDROP Dropout Voltage IO = 1A, TJ = +25°C – 2.0 – V

rO Output Resistance(18) f = 1kHz – 28.0 – mΩ

ISC Short Circuit Current VI = 35V, TA = +25°C – 230 – mA

IPK Peak Current(18) TJ = +25°C – 2.2 – A

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Electrical Characteristics (LM7805A) (Continued)Refer to the test circuits. 0°C < TJ < 125°C, IO = 1A, VI = 10V, CI = 0.33µF, CO = 0.1µF, unless otherwise specified.

Notes:19. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must

be taken into account separately. Pulse testing with low duty is used.20. These parameters, although guaranteed, are not 100% tested in production.

Symbol Parameter Conditions Min. Typ. Max. Unit

VO Output Voltage TJ = +25°C 4.9 5.0 5.1 V

IO = 5mA to 1A, PO ≤ 15W, VI = 7.5V to 20V

4.8 5.0 5.2

Regline Line Regulation(19) VI = 7.5V to 25V, IO = 500mA – 5.0 50.0 mV

VI = 8V to 12V – 3.0 50.0

TJ = +25°C VI = 7.3V to 20V – 5.0 50.0

VI = 8V to 12V – 1.5 25.0

Regload Load Regulation(19) TJ = +25°C, IO = 5mA to 1.5A – 9.0 100 mV

IO = 5mA to 1A – 9.0 100

IO = 250mA to 750mA – 4.0 50.0

IQ Quiescent Current TJ = +25°C – 5.0 6.0 mA

∆IQ Quiescent Current Change

IO = 5mA to 1A – – 0.5 mA

VI = 8V to 25V, IO = 500mA – – 0.8

VI = 7.5V to 20V, TJ = +25°C – – 0.8

∆VO/∆T Output Voltage Drift(20) IO = 5mA – -0.8 – mV/°C

VN Output Noise Voltage f = 10Hz to 100kHz, TA = +25°C – 10.0 – µV/VO

RR Ripple Rejection(20) f = 120Hz, IO = 500mA, VI = 8V to 18V – 68.0 – dB

VDROP Dropout Voltage IO = 1A, TJ = +25°C – 2.0 – V

rO Output Resistance(20) f = 1kHz – 17.0 – mΩ

ISC Short Circuit Current VI = 35V, TA = +25°C – 250 – mA

IPK Peak Current(20) TJ = +25°C – 2.2 – A

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Electrical Characteristics (LM7806A) (Continued)Refer to the test circuits. 0°C < TJ < 125°C, IO = 1A, VI = 11V, CI = 0.33µF, CO = 0.1µF, unless otherwise specified.

Notes:21. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must

be taken into account separately. Pulse testing with low duty is used.22. These parameters, although guaranteed, are not 100% tested in production.

Symbol Parameter Conditions Min. Typ. Max. Unit

VO Output Voltage TJ = +25°C 5.58 6.0 6.12 V

IO = 5mA to 1A, PO ≤ 15W, VI = 8.6V to 21V

5.76 6.0 6.24

Regline Line Regulation(21) VI = 8.6V to 25V, IO = 500mA – 5.0 60.0 mV

VI = 9V to 13V – 3.0 60.0

TJ = +25°C VI = 8.3V to 21V – 5.0 60.0

VI = 9V to 13V – 1.5 30.0

Regload Load Regulation(21) TJ = +25°C, IO = 5mA to 1.5A – 9.0 100 mV

IO = 5mA to 1A – 9.0 100

IO = 250mA to 750mA – 5.0 50.0

IQ Quiescent Current TJ = +25°C – 4.3 6.0 mA

∆IQ Quiescent Current Change IO = 5mA to 1A – – 0.5 mA

VI = 19V to 25V, IO = 500mA – – 0.8

VI = 8.5V to 21V, TJ = +25°C – – 0.8

∆VO/∆T Output Voltage Drift(22) IO = 5mA – -0.8 – mV/°C

VN Output Noise Voltage f = 10Hz to 100kHz, TA = +25°C – 10.0 – µV/VO

RR Ripple Rejection(22) f = 120Hz, IO = 500mA, VI = 9V to 19V – 65.0 – dB

VDROP Dropout Voltage IO = 1A, TJ = +25°C – 2.0 – V

rO Output Resistance(22) f = 1kHz – 17.0 – mΩ

ISC Short Circuit Current VI = 35V, TA = +25°C – 250 – mA

IPK Peak Current(22) TJ = +25°C – 2.2 – A

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Electrical Characteristics (LM7808A) (Continued)Refer to the test circuits. 0°C < TJ < 125°C, IO = 1A, VI = 14V, CI = 0.33µF, CO = 0.1µF, unless otherwise specified.

Notes:23. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must

be taken into account separately. Pulse testing with low duty is used.24. These parameters, although guaranteed, are not 100% tested in production.

Symbol Parameter Conditions Min. Typ. Max. Unit

VO Output Voltage TJ = +25°C 7.84 8.0 8.16 V

IO = 5mA to 1A, PO ≤ 15W, VI = 10.6V to 23V

7.7 8.0 8.3

Regline Line Regulation(23) VI = 10.6V to 25V, IO = 500mA – 6.0 80.0 mV

VI = 11V to 17V – 3.0 80.0

TJ = +25°C VI = 10.4V to 23V – 6.0 80.0

VI = 11V to 17V – 2.0 40.0

Regload Load Regulation(23) TJ = +25°C, IO = 5mA to 1.5A – 12.0 100 mV

IO = 5mA to 1A – 12.0 100

IO = 250mA to 750mA – 5.0 50.0

IQ Quiescent Current TJ = +25°C – 5.0 6.0 mA

∆IQ Quiescent Current Change IO = 5mA to 1A – – 0.5 mA

VI = 11V to 25V, IO = 500mA – – 0.8

VI = 10.6V to 23V, TJ = +25°C – – 0.8

∆VO/∆T Output Voltage Drift(24) IO = 5mA – -0.8 – mV/°C

VN Output Noise Voltage f = 10Hz to 100kHz, TA = +25°C – 10.0 – µV/VO

RR Ripple Rejection(24) f = 120Hz, IO = 500mA, VI = 11.5V to 21.5V

– 62.0 – dB

VDROP Dropout Voltage IO = 1A, TJ = +25°C – 2.0 – V

rO Output Resistance(24) f = 1kHz – 18.0 – mΩ

ISC Short Circuit Current VI = 35V, TA = +25°C – 250 – mA

IPK Peak Current(24) TJ = +25°C – 2.2 – A

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Electrical Characteristics (LM7809A) (Continued)Refer to the test circuits. 0°C < TJ < 125°C, IO = 1A, VI = 15V, CI = 0.33µF, CO = 0.1µF, unless otherwise specified.

Notes:25. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must

be taken into account separately. Pulse testing with low duty is used.26. These parameters, although guaranteed, are not 100% tested in production.

Symbol Parameter Conditions Min. Typ. Max. Units

VO Output Voltage TJ = +25°C 8.82 9.0 9.16 V

IO = 5mA to 1A, PO ≤ 15W, VI = 11.2V to 24V

8.65 9.0 9.35

Regline Line Regulation(25) VI = 11.7V to 25V, IO = 500mA – 6.0 90.0 mV

VI = 12.5V to 19V – 4.0 45.0

TJ = +25°C VI = 11.5V to 24V – 6.0 90.0

VI = 12.5V to 19V – 2.0 45.0

Regload Load Regulation(25) TJ = +25°C, IO = 5mA to 1.5A – 12.0 100 mV

IO = 5mA to 1A – 12.0 100

IO = 250mA to 750mA – 5.0 50.0

IQ Quiescent Current TJ = +25°C – 5.0 6.0 mA

∆IQ Quiescent Current Change IO = 5mA to 1A – – 0.5 mA

VI = 12V to 25V, IO = 500mA – – 0.8

VI = 11.7V to 25V, TJ = +25°C – – 0.8

∆VO/∆T Output Voltage Drift(26) IO = 5mA – -1.0 – mV/°C

VN Output Noise Voltage f = 10Hz to 100kHz, TA = +25°C – 10.0 – µV/VO

RR Ripple Rejection(26) f = 120Hz, IO = 500mA, VI = 12V to 22V

– 62.0 – dB

VDROP Dropout Voltage IO = 1A, TJ = +25°C – 2.0 – V

rO Output Resistance(26) f = 1kHz – 17.0 – mΩ

ISC Short Circuit Current VI = 35V, TA = +25°C – 250 – mA

IPK Peak Current(26) TJ = +25°C – 2.2 – A

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Electrical Characteristics (LM7810A) (Continued)Refer to the test circuits. 0°C < TJ < 125°C, IO = 1A, VI = 16V, CI = 0.33µF, CO = 0.1µF, unless otherwise specified.

Notes:27. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must

be taken into account separately. Pulse testing with low duty is used.28. These parameters, although guaranteed, are not 100% tested in production.

Symbol Parameter Conditions Min. Typ. Max. Units

VO Output Voltage TJ = +25°C 9.8 10.0 10.2 V

IO = 5mA to 1A, PO ≤ 15W, VI = 12.8V to 25V

9.6 10.0 10.4

Regline Line Regulation(27) VI = 12.8V to 26V, IO = 500mA – 8.0 100 mV

VI = 13V to 20V – 4.0 50.0

TJ = +25°C VI = 12.5V to 25V – 8.0 100

VI = 13V to 20V – 3.0 50.0

Regload Load Regulation(27) TJ = +25°C, IO = 5mA to 1.5A – 12.0 100 mV

IO = 5mA to 1A – 12.0 100

IO = 250mA to 750mA – 5.0 50.0

IQ Quiescent Current TJ = +25°C – 5.0 6.0 mA

∆IQ Quiescent Current Change

IO = 5mA to 1A – – 0.5 mA

VI = 12.8V to 25V, IO = 500mA – – 0.8

VI = 13V to 26V, TJ = +25°C – – 0.5

∆VO/∆T Output Voltage Drift(28) IO = 5mA – -1.0 – mV/°C

VN Output Noise Voltage f = 10Hz to 100kHz, TA = +25°C – 10.0 – µV/VO

RR Ripple Rejection(28) f = 120Hz, IO = 500mA, VI = 14V to 24V – 62.0 – dB

VDROP Dropout Voltage IO = 1A, TJ = +25°C – 2.0 – V

rO Output Resistance(28) f = 1kHz – 17.0 – mΩ

ISC Short Circuit Current VI = 35V, TA = +25°C – 250 – mA

IPK Peak Current(28) TJ = +25°C – 2.2 – A

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Electrical Characteristics (LM7812A) (Continued)Refer to the test circuits. 0°C < TJ < 125°C, IO = 1A, VI = 19V, CI = 0.33µF, CO = 0.1µF, unless otherwise specified.

Note:29. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must

be taken into account separately. Pulse testing with low duty is used.30. These parameters, although guaranteed, are not 100% tested in production.

Symbol Parameter Conditions Min. Typ. Max. Units

VO Output Voltage TJ = +25°C 11.75 12.0 12.25 V

IO = 5mA to 1A, PO ≤ 15W, VI = 14.8V to 27V

11.5 12.0 12.5

Regline Line Regulation(29) VI = 14.8V to 30V, IO = 500mA – 10.0 120 mV

VI = 16V to 22V – 4.0 120

TJ = +25°C VI = 14.5V to 27V – 10.0 120

VI = 16V to 22V – 3.0 60.0

Regload Load Regulation(29) TJ = +25°C, IO = 5mA to 1.5A – 12.0 100 mV

IO = 5mA to 1A – 12.0 100

IO = 250mA to 750mA – 5.0 50.0

IQ Quiescent Current TJ = +25°C – 5.1 6.0 mA

∆IQ Quiescent Current Change IO = 5mA to 1A – – 0.5 mA

VI = 14V to 27V, IO = 500mA – – 0.8

VI = 15V to 30V, TJ = +25°C – – 0.8

∆VO/∆T Output Voltage Drift(30) IO = 5mA – -1.0 – mV/°C

VN Output Noise Voltage f = 10Hz to 100kHz, TA = +25°C – 10.0 – µV/VO

RR Ripple Rejection(30) f = 120Hz, IO = 500mA, VI = 14V to 24V

– 60.0 – dB

VDROP Dropout Voltage IO = 1A, TJ = +25°C – 2.0 – V

rO Output Resistance(30) f = 1kHz – 18.0 – mΩ

ISC Short Circuit Current VI = 35V, TA = +25°C – 250 – mA

IPK Peak Current(30) TJ = +25°C – 2.2 – A

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18 www.fairchildsemi.comLM78XX/LM78XXA Rev. 1.0.1

LM

78XX

/LM

78XX

A 3-Term

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Electrical Characteristics (LM7815A) (Continued)Refer to the test circuits. 0°C < TJ < 125°C, IO = 1A, VI = 23V, CI = 0.33µF, CO = 0.1µF, unless otherwise specified.

Notes:31. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must

be taken into account separately. Pulse testing with low duty is used.32. These parameters, although guaranteed, are not 100% tested in production.

Symbol Parameter Conditions Min. Typ. Max. Units

VO Output Voltage TJ = +25°C 14.75 15.0 15.3 V

IO = 5mA to 1A, PO ≤ 15W, VI = 17.7V to 30V

14.4 15.0 15.6

Regline Line Regulation(31) VI = 17.4V to 30V, IO = 500mA – 10.0 150 mV

VI = 20V to 26V – 5.0 150

TJ = +25°C VI = 17.5V to 30V – 11.0 150

VI = 20V to 26V – 3.0 75.0

Regload Load Regulation(31) TJ = +25°C, IO = 5mA to 1.5A – 12.0 100 mV

IO = 5mA to 1A – 12.0 100

IO = 250mA to 750mA – 5.0 50.0

IQ Quiescent Current TJ = +25°C – 5.2 6.0 mA

∆IQ Quiescent Current Change IO = 5mA to 1A – – 0.5 mA

VI = 17.5V to 30V, IO = 500mA – – 0.8

VI = 17.5V to 30V, TJ = +25°C – – 0.8

∆VO/∆T Output Voltage Drift(32) IO = 5mA – -1.0 – mV/°C

VN Output Noise Voltage f = 10Hz to 100kHz, TA = +25°C – 10.0 – µV/VO

RR Ripple Rejection(32) f = 120Hz, IO = 500mA, VI = 18.5V to 28.5V

– 58.0 – dB

VDROP Dropout Voltage IO = 1A, TJ = +25°C – 2.0 – V

rO Output Resistance(32) f = 1kHz – 19.0 – mΩ

ISC Short Circuit Current VI = 35V, TA = +25°C – 250 – mA

IPK Peak Current(32) TJ = +25°C – 2.2 – A

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19 www.fairchildsemi.comLM78XX/LM78XXA Rev. 1.0.1

LM

78XX

/LM

78XX

A 3-Term

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Electrical Characteristics (LM7818A) (Continued)Refer to the test circuits. 0°C < TJ < 125°C, IO = 1A, VI = 27V, CI = 0.33µF, CO = 0.1µF, unless otherwise specified.

Notes:33. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must

be taken into account separately. Pulse testing with low duty is used.34. These parameters, although guaranteed, are not 100% tested in production.

Symbol Parameter Conditions Min. Typ. Max. Units

VO Output Voltage TJ = +25°C 17.64 18.0 18.36 V

IO = 5mA to 1A, PO ≤ 15W, VI = 21V to 33V

17.3 18.0 18.7

Regline Line Regulation(33) VI = 21V to 33V, IO = 500mA – 15.0 180 mV

VI = 21V to 33V – 5.0 180

TJ = +25°C VI = 20.6V to 33V – 15.0 180

VI = 24V to 30V – 5.0 90.0

Regload Load Regulation(33) TJ = +25°C, IO = 5mA to 1.5A – 15.0 100 mV

IO = 5mA to 1A – 15.0 100

IO = 250mA to 750mA – 7.0 50.0

IQ Quiescent Current TJ = +25°C – 5.2 6.0 mA

∆IQ Quiescent Current Change IO = 5mA to 1A – – 0.5 mA

VI = 12V to 33V, IO = 500mA – – 0.8

VI = 12V to 33V, TJ = +25°C – – 0.8

∆VO/∆T Output Voltage Drift(34) IO = 5mA – -1.0 – mV/°C

VN Output Noise Voltage f = 10Hz to 100kHz, TA = +25°C – 10.0 – µV/VO

RR Ripple Rejection(34) f = 120Hz, IO = 500mA, VI = 22V to 32V

– 57.0 – dB

VDROP Dropout Voltage IO = 1A, TJ = +25°C – 2.0 – V

rO Output Resistance(34) f = 1kHz – 19.0 – mΩ

ISC Short Circuit Current VI = 35V, TA = +25°C – 250 – mA

IPK Peak Current(34) TJ = +25°C – 2.2 – A

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20 www.fairchildsemi.comLM78XX/LM78XXA Rev. 1.0.1

LM

78XX

/LM

78XX

A 3-Term

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Electrical Characteristics (LM7824A) (Continued)Refer to the test circuits. 0°C < TJ < 125°C, IO = 1A, VI = 33V, CI = 0.33µF, CO = 0.1µF, unless otherwise specified.

Notes:35. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must

be taken into account separately. Pulse testing with low duty is used.36. These parameters, although guaranteed, are not 100% tested in production.

Symbol Parameter Conditions Min. Typ. Max. Units

VO Output Voltage TJ = +25°C 23.5 24.0 24.5 V

IO = 5mA to 1A, PO ≤ 15W, VI = 27.3V to 38V

23.0 24.0 25.0

Regline Line Regulation(35) VI = 27V to 38V, IO = 500mA – 18.0 240 mV

VI = 21V to 33V – 6.0 240

TJ = +25°C VI = 26.7V to 38V – 18.0 240

VI = 30V to 36V – 6.0 120

Regload Load Regulation(35) TJ = +25°C, IO = 5mA to 1.5A – 15.0 100 mV

IO = 5mA to 1A – 15.0 100

IO = 250mA to 750mA – 7.0 50.0

IQ Quiescent Current TJ = +25°C – 5.2 6.0 mA

∆IQ Quiescent Current Change IO = 5mA to 1A – – 0.5 mA

VI = 27.3V to 38V, IO = 500mA – – 0.8

VI = 27.3V to 38V, TJ = +25°C – – 0.8

∆VO/∆T Output Voltage Drift(36) IO = 5mA – -1.5 – mV/°C

VN Output Noise Voltage f = 10Hz to 100kHz, TA = +25°C – 10.0 – µV/VO

RR Ripple Rejection(36) f = 120Hz, IO = 500mA, VI = 28V to 38V

– 54.0 – dB

VDROP Dropout Voltage IO = 1A, TJ = +25°C – 2.0 – V

rO Output Resistance(36) f = 1kHz – 20.0 – mΩ

ISC Short Circuit Current VI = 35V, TA = +25°C – 250 – mA

IPK Peak Current(36) TJ = +25°C – 2.2 – A

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21 www.fairchildsemi.comLM78XX/LM78XXA Rev. 1.0.1

LM

78XX

/LM

78XX

A 3-Term

inal 1A

Po

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Typical Performance Characteristics

Figure 3. Quiescent Current Figure 4. Peak Output Current

Figure 5. Output Voltage Figure 6. Quiescent Current

6

5.75

5.5

5.25

5

4.75

4.5

VI = 10VVO = 5VIO = 5mA

-25-50 0 025 50 75 100 125

QU

IES

CE

NT

CU

RR

EN

T (m

A)

JUNCTION TEMPERATURE (°C)

3

2.5

2

1.5

1

.5

0

TJ = 25°C∆VO = 100mV

5 10 15 20 25 30 35

OU

TP

UT

CU

RR

EN

T (A

)

INPUT-OUTPUT DIFFERENTIAL (V)

1.02

1.01

1

0.99

0.98

VI – VO = 5VIO = 5mA

-25-50 0 25 50 75 100 125

NO

RM

ALI

ZE

D O

UT

PU

T V

OLT

AG

E (V

)

JUNCTION TEMPERATURE (°C)

7

6.5

6

5.5

5

4.5

4

TJ = 25°CVO = 5VIO = 10mA

105 15 20 25 30 35

QU

IES

CE

NT

CU

RR

EN

T (m

A)

INPUT VOLTAGE (V)

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22 www.fairchildsemi.comLM78XX/LM78XXA Rev. 1.0.1

LM

78XX

/LM

78XX

A 3-Term

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Typical Applications

Figure 7. DC Parameters

Figure 8. Load Regulation

Figure 9. Ripple Rejection

0.1µFCOCI0.33µF

OutputInputLM78XX

1 3

2

LM78XX3

2

1

0.33µF

270pF

100Ω 30µS

RL

2N6121or EQ

OutputInput

VO0V

VO

LM78XXOutputInput

5.1Ω

0.33µF2

31

RL

470µF

120Hz +

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23 www.fairchildsemi.comLM78XX/LM78XXA Rev. 1.0.1

LM

78XX

/LM

78XX

A 3-Term

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Po

sitive Voltag

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Figure 10. Fixed Output Regulator

Figure 11.

Figure 12. Circuit for Increasing Output Voltage

0.1µFCOCI0.33µF

OutputInputLM78XX

1 3

2

0.1µFCOCI0.33µF

OutputInput

LM78XX1 3

2 VXXR1

RL

IQ

IO

IO = R1 + IQVXX

Notes:1. To specify an output voltage, substitute voltage value for “XX.” A common ground is required between the input and the

output voltage. The input voltage must remain typically 2.0V above the output voltage even during the low point on the input ripple voltage.

2. CI is required if regulator is located an appreciable distance from power supply filter.3. CO improves stability and transient response.

0.1µFCOCI0.33µF

Output

InputLM78XX

1 3

2 VXXR1

R2

IQ

IRI ≥ 5 IQVO = VXX(1 + R2 / R1) + IQR2

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24 www.fairchildsemi.comLM78XX/LM78XXA Rev. 1.0.1

LM

78XX

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78XX

A 3-Term

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Figure 13. Adjustable Output Regulator (7V to 30V)

Figure 14. High Current Voltage Regulator

Figure 15. High Output Current with Short Circuit Protection

LM741

-

+

2

36

4

2

31

0.33µFCI

Input Output

0.1µF

CO

LM7805

10kΩ

IRI ≥ 5 IQVO = VXX(1 + R2 / R1) + IQR2

3

2

1LM78XX

Output

Input

R1

0.33µF

IREG

0.1µF

IO

IQ1

IO = IREG + BQ1 (IREG–VBEQ1/R1)

Q1 BD536

R1 = VBEQ1

IREG–IQ1 BQ1

LM78XXOutput

0.1µF0.33µF

R1

3

2

1

Q1Input

Q2

Q1 = TIP42Q2 = TIP42

RSC = I SC

VBEQ2

RSC

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25 www.fairchildsemi.comLM78XX/LM78XXA Rev. 1.0.1

LM

78XX

/LM

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A 3-Term

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Figure 16. Tracking Voltage Regulator

Figure 17. Split Power Supply (±15V – 1A)

LM78XX

LM741

0.1µF0.33µF

1

2

3

7 2

6

4 3 4.7kΩ

4.7kΩ

TIP42

COMMONCOMMON

VO

-VO

VI

-VIN

_

+

31

2

1

32

0.33µF 0.1µF

2.2µF1µF +

+

1N4001

1N4001

+15V

-15V

+20V

-20V

LM7815

MC7915

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26 www.fairchildsemi.comLM78XX/LM78XXA Rev. 1.0.1

LM

78XX

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A 3-Term

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Figure 18. Negative Output Voltage Circuit

Figure 19. Switching Regulator

LM78XX

Output

Input

+

1

2

0.1µF

3

LM78XX

1mH

31

2

2000µF

OutputInput D45H11

0.33µF

470Ω4.7Ω

10µF

0.5Ω

Z1

+

+

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27 www.fairchildsemi.comLM78XX/LM78XXA Rev. 1.0.1

LM

78XX

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Mechanical DimensionsDimensions in millimeters

4.50 ±0.209.90 ±0.20

1.52 ±0.10

0.80 ±0.102.40 ±0.20

10.00 ±0.20

1.27 ±0.10

ø3.60 ±0.10

(8.70)

2.80

±0.

1015

.90

±0.2

0

10.0

8 ±0

.30

18.9

5MA

X.

(1.7

0)

(3.7

0)(3

.00)

(1.4

6)

(1.0

0)

(45°)

9.20

±0.

2013

.08

±0.2

0

1.30

±0.

10

1.30+0.10–0.05

0.50+0.10–0.05

2.54TYP[2.54 ±0.20]

2.54TYP[2.54 ±0.20]

TO-220

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28 www.fairchildsemi.comLM78XX/LM78XXA Rev. 1.0.1

LM

78XX

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Rev. I19

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is notintended to be an exhaustive list of all such trademarks.

DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANYPRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANYLIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESESPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILDíS WORLDWIDE TERMS AND CONDITIONS,SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICYFAIRCHILDíS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTORCORPORATION.

As used herein:1. Life support devices or systems are devices or systemswhich, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to performwhen properly used in accordance with instructions for useprovided in the labeling, can be reasonably expected toresult in significant injury to the user.

2. A critical component is any component of a life supportdevice or system whose failure to perform can bereasonably expected to cause the failure of the life supportdevice or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONSDefinition of Terms

ACEx™ActiveArray™Bottomless™Build it Now™CoolFET™CROSSVOLT™DOME™EcoSPARK™E2CMOS™EnSigna™FACT™

FAST®

FASTr™FPS™FRFET™GlobalOptoisolator™GTO™HiSeC™I2C™i-Lo™ImpliedDisconnect™IntelliMAX™

ISOPLANAR™LittleFET™MICROCOUPLER™MicroFET™MicroPak™MICROWIRE™MSX™MSXPro™OCX™OCXPro™OPTOLOGIC®

OPTOPLANAR™PACMAN™POP™Power247™

PowerEdge™PowerSaver™PowerTrench®

QFET®

QS™QT Optoelectronics™Quiet Series™RapidConfigure™RapidConnect™µSerDes™ScalarPump™SILENT SWITCHER®

SMART START™SPM™Stealth™

SuperFET™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TCM™TinyLogic®

TINYOPTO™TruTranslation™UHC™UniFET™UltraFET®

VCX™Wire™

FACT Quiet Series™Across the board. Around the world.™The Power Franchise®

Programmable Active Droop™

Datasheet Identification Product Status Definition

Advance Information Formative or In Design

This datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.

Preliminary First Production This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.

No Identification Needed Full Production This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.

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Product Datasheet P1110B – 915 MHz RF Powerharvester Receiver

Rev A –2016/11 © 2016 Powercast Corporation, All rights reserved. www.powercastco.com

+1 412-455-5800 P a g e | 1

DESCRIPTION The Powercast P1110B Powerharvester receiver is an RF energy harvesting device that converts RF to DC. Housed in a compact SMD package, the P1110B receiver provides RF energy harvesting and power management for battery and capacitor recharging. The P1110B converts RF energy to DC and provides the energy to the attached storage element. When an adjustable voltage threshold on the storage element is achieved, the P1110B automatically disables charging. A microprocessor can be used to obtain data from the component for improving overall system operation.

FEATURES High conversion efficiency, >70% Low power consumption Configurable voltage output to support

Li-ion and Alkaline battery recharging Operation from 0V to support capacitor

charging Received signal strength indicator No external RF components required -

Internally matched to 50 ohms Wide operating range Operation down to -5 dBm input power Industrial temperature range RoHS Compliant

APPLICATIONS Wireless sensors

- Industrial Monitoring - Smart Grid - Structural Health Monitoring - Defense - Building automation - Agriculture - Oil & Gas - Location-aware services

Wireless trigger Low power electronics

FUNCTIONAL BLOCK DIAGRAM

PIN CONFIGURATION TOP VIEW

Powerharvester and Powercast are registered trademarks of Powercast Corporation. All other trademarks are the property of their respective owners.

GN

D

GN

D

GN

D

DO

UT

DS

ET

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Product Datasheet P1110B – 915 MHz RF Powerharvester Receiver

Rev A –2016/11 © 2016 Powercast Corporation, All rights reserved. www.powercastco.com

+1 412-455-5800 P a g e | 2

ABSOLUTE MAXIMUM RATINGS TA = 25°C, unless otherwise noted.

ESD CAUTION This is an ESD (electrostatic discharge) sensitive device. Proper ESD precautions should be taken to avoid degradation or damage to the component.

PIN FUNCTIONAL DESCRIPTION

Pin Label Function 1 LI Li-ion/LiPo recharging pin. Connect directly to the analog ground plane for 4.2V

maximum recharging. NC when using ALK or VSET pin. 2 GND RF Ground. Connect to analog ground plane. 3 RFIN RF Input. Connect to 50Ω antenna through a 50Ω transmission line. Add a DC block

if antenna is a DC short. 4 GND RF Ground. Connect to analog ground plane. 5 DSET Digital Input. Set to enable measurement of harvested power. If this function is not

desired leave NC. 6 VSET Maximum Output Voltage Adjustment. Sets the maximum output voltage on the

VOUT pin. Connect to an external resistor. NC when using LI or ALK pin. 7 GND DC Ground. Connect to analog ground plane. 8 VOUT DC Output. Connect to external storage device. Maximum output voltage set by

VSET, LI, or ALK pin. 9 DOUT Analog Output. Provides an analog voltage level corresponding to the harvested

power. 10 ALK Alkaline recharging pin. Connect directly to the analog ground plane for 3.3V

maximum recharging. NC when using LI or VSET pin.

Exceeding the absolute maximum ratings may cause permanent damage to the device.

Parameter Rating Unit

RF Input Power 23 dBm

RFIN to GND 0 V

DSET to GND 6 V

VOUT to GND 4.3 V

VOUT Current 100 mA

Operating Temperature Range -40 to 85 °C

Storage Temperature Range -40 to 85 °C

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Product Datasheet P1110B – 915 MHz RF Powerharvester Receiver

Rev A –2016/11 © 2016 Powercast Corporation, All rights reserved. www.powercastco.com

+1 412-455-5800 P a g e | 3

SPECIFICATIONS

TA = 25°C, VOUT = 3.0V, unless otherwise noted.

Parameter Symbol Condition Min Typ Max Unit RF Characteristics

Input Power Frequency

RFIN

0

902

20

928

dBm MHz

DC Characteristics VOUT

No RFIN

0

-1.5

4.2

V Output Voltage

Output Current IOUT 50 mA Output Current IOUT A VSET Range VSET 1.8 4.2 V Signal Strength DOUT RFIN = 0dBm 61 mV

Digital Characteristics DSET Input High

1

V

Timing Characteristics DSET Delay

20

s

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Product Datasheet P1110B – 915 MHz RF Powerharvester Receiver

Rev A –2016/11 © 2016 Powercast Corporation, All rights reserved. www.powercastco.com

+1 412-455-5800 P a g e | 4

FUNCTIONAL DESCRIPTION

RF INPUT (RFIN) The RF input is an unbalanced input from the antenna. Any standard or custom 50 antenna may be used with the receiver. The P1110B has been optimized for operation in the 902-928MHz band but will operate outside this band with reduced efficiency. Contact Powercast for custom frequency requirements.

The RF input must be isolated from ground. For antennas that are a DC short, a high-Q DC blocking capacitor should be added in series with the antenna.

STORAGE SELECTION (VOUT) The P1110B is designed to charge an external storage element including batteries and capacitors. The output voltage from the P1110B will be set by the voltage of the storage element with a maximum set by the VSET, LI, or ALK pin. The P1110B will produce a charging current that will be dependent on the RF input power. The voltage on this pin can vary from 0V to 4.2V. The charging current for a fixed input RF power will decrease as the voltage on the VOUT pin increase due to the fixed amount of power available.

The P1110B monitors the voltage on the storage element and turns off VOUT when the element is fully charged. The P1110B does not monitor the charging current because it is typically much less than the maximum charge current of the storage element.

When selecting a storage element, the leakage current must be strongly considered. Certain battery chemistries have higher leakage currents than others. It is recommended that the leakage current of the storage element be less than 1% per month. Higher leakage currents will result in using more of the harvested energy to replace the capacity lost due to leakage rather than replenishing the capacity.

When no load is attached to the P1110B, a minimum of 10uF is required on the VOUT pin.

RSSI OPERATION (DOUT, DSET) The RSSI functionality allows the sampling of the received signal to provide an indication of the amount of energy being harvested. When DSET is driven high the harvested DC power will be directed to an internal sense resistor, and the corresponding voltage will be provided to the DOUT pin. The voltage on the DOUT pin can be read after a 20μs settling time.

When the RSSI functionality is being used, the harvested DC power is not being stored.

If the RSSI functionality is not used, the DOUT

and DSET pins should be left as no connects. The DSET pin has an internal pull down.

SETTING THE OUTPUT VOLTAGE (VOUT) The maximum voltage from the P1110B is set using the VSET, LI, or ALK pin. The LI pin can be directly connected to ground to set the maximum voltage to 4.2V, or the ALK

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Product Datasheet P1110B – 915 MHz RF Powerharvester Receiver

Rev A –2016/11 © 2016 Powercast Corporation, All rights reserved. www.powercastco.com

+1 412-455-5800 P a g e | 5

pin can be directly connected to ground to set the maximum voltage to 3.3V. For custom voltage settings, the VSET pin can be used. Placing a resistor from VSET to ground will adjust the maximum output voltage. The resistor can be calculated using the following equation.

R 12.35M

VOUT MAX 1.235

The DOUT pin can contain low-level analog voltage signals. If a long trace is connected to this pin, additional filtering capacitance next to the A/D converter may be required. Additional capacitance on this pin will increase the DSET delay time.

LAYOUT CONSIDERATIONS When setting the output voltage, the resistor connected to the VSET pin should be as close as possible to the pin. No external capacitance should be added to this pin.

The RFIN feed line should be designed as a 50Ω trace and should be as short as possible to minimize feed line losses. The following table provides recommended dimensions for 50Ω feed lines (CPWG) for different circuit board configurations.

PCB Side View

Material Thickness (H)

Trace Width (S)

Spacing (W)

FR4 (εr = 4.2)

62 50 9

FR4 (εr = 4.2)

31 50 20

*All dimensions are in mils.

The GND pins on each side of the RFIN pin should be connected to the PCB ground plane through a via located next to the pads under the receiver.

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Product Datasheet P1110B – 915 MHz RF Powerharvester Receiver

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TYPICAL PERFORMANCE GRAPHS TA = 25°C, unless otherwise noted.

Powerharvester Efficiency vs. RFIN (dBm)

Powerharvester Efficiency vs. Frequency

Powerharvester Efficiency vs. RFIN (mW)

Powerharvester Efficiency vs. Frequency

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Product Datasheet P1110B – 915 MHz RF Powerharvester Receiver

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TYPICAL PERFORMANCE GRAPHS TA = 25°C, unless otherwise noted.

Received Signal Strength Indicator vs. RFIN (dBm)

Charge Current vs. RFIN (dBm)

Received Signal Strength Indicator vs. RFIN (mW)

Charge Current vs. RFIN (mW)

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Product Datasheet P1110B – 915 MHz RF Powerharvester Receiver

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TYPICAL APPLICATION CIRCUIT

Power Receiving Antenna

VOUT

RFIN

P1110B

DSET

DOUT GND ALK

Microprocessor

Radio module

Sensors

Communication Antenna

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Product Datasheet P1110B – 915 MHz RF Powerharvester Receiver

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MECHANICAL SPECIFICATIONS

B

B

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Product Datasheet P1110B – 915 MHz RF Powerharvester Receiver

Rev A –2016/11 © 2016 Powercast Corporation. All rights reserved. www.powercastco.com

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IMPORTANT NOTICE

Information furnished by Powercast Corporation (Powercast) is believed to be accurate and reliable. However, no responsibility is assumed by Powercast for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications are subject to change without notice.

No license is granted by implication or otherwise under any patent or patent rights of Powercast. Trademarks and registered trademarks are the property of their respective owners.

POWERCAST PRODUCTS (INCLUDING HARDWARE AND/OR SOFTWARE) ARE NOT DESIGNED OR INTENDED TO BE FAIL-SAFE, FAULT TOLERANT OR FOR USE IN ANY APPLICATION THAT COULD LEAD TO DEATH, PERSONAL INJURY OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (INDIVIDUALLY AND COLLECTIVELY, “CRITICAL APPLICATIONS”), SUCH AS LIFE-SUPPORT OR SAFETY DEVICES OR SYSTEMS, CLASS III MEDICAL DEVICES, NUCLEAR FACILITIES, APPLICATIONS THAT AFFECT CONTROL OF A VEHICLE OR AIRCRAFT, APPLICATIONS RELATED TO THE DEPLOYMENT OF AIRBAGS, OR ANY OTHER CRITICAL APPLICATIONS. CUSTOMER AGREES, PRIOR TO USING OR DISTRIBUTING ANY SYSTEMS THAT INCORPORATE POWERCAST PRODUCTS, TO THOROUGHLY TEST THE SAME FOR SAFETY PURPOSES. CUSTOMER ASSUMES THE SOLE RISK AND LIABILITY OF ANY USE OF POWERCAST PRODUCTS IN CRITICAL APPLICATIONS, SUBJECT ONLY TO APPLICABLE LAWS AND REGULATIONS GOVERNING LIMITATIONS ON PRODUCT LIABILITY.

Powercast warrants its products in accordance with Powercast’s standard warranty available at www.powercastco.com.

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P1110-EVB

Evaluation Board for P1110 Powerharvester®

Receiver Description: The P1110-EVB contains an evaluation board and antennas to test and develop with the P1110 Powerharvester Receiver. The P1110 converts RF energy (radio waves) into DC power which can be stored in a battery or capacitor, or used to directly power a circuit.

Items included: 1 – Evaluation Board for P1110 Powerharvester Receiver (see description on next page) 1 – 915 MHz PCB dipole antenna (see description below) 1 – 915 MHz PCB patch antenna (see description below)

Note – this kit needs to receive power from an RF source such as a transmitter or test equipment.

Instructions: 1. Download the P1110 product datasheet from www.powercastco.com/documentation to learn about the specific I/O and functions of the P1110.

2. Connect one of the antennas to the SMA connector (J1) on the evaluation board, or connect J1 directly to RF test equipment. See datasheet for maximum input power.

3. Adjust switches S1, S2, S3, and S4 to desired settings. See descriptions on next page.

4. Place evaluation board on flat surface and connect test meters as desired.

5. Turn on the source of RF energy (e.g. Powercast transmitter, test equipment, other transmitter)

Support: Website: http://www.powercastco.com/documentation/ Email: [email protected] Phone: +1 412-455-5800 (Eastern Time Zone – USA)

Item Descriptions 915 MHz PCB Dipole Antenna This antenna is flat and has the RF connector located at the bottom of the

antenna. Type: omni-directional, vertically polarized Energy pattern: 360° Antenna gain: Linear gain = 1.25 (1.0 dBi)

915 MHz PCB Patch Antenna This antenna has two layers and the RF connector located on the back of the antenna. The front side should be pointed toward the transmitter with the same polarization

Type: directional, vertically polarized Energy pattern: 122° (azimuth/horizontal), 68° (elevation/vertical) Antenna gain: Linear gain = 4.1 (6.1 dBi)

P1110-EVB, Rev C 2015/06 © 2015 Powercast Corporation Page 1

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Evaluation Board

Component Description

S1 Switch for max. output voltage – 4.2V, 3.3V, ADJ (custom using R5 + R6 – see datasheet)

S2 Switch for output power

LED (power sent to illuminate LED D1)

MEAS (use with test points VOUT to LED or VOUT to STORE and in-line current meter)

VCC (power sent to test area and S4)

S3 Switch for DSET selection. When enabled, RSSI is available through DOUT. VOUT (Enabled by on-board voltage source (>1V) from C6 or BT1 through switch S4)

EXT (Enabled by external source through DSET EXT test point)

OFF (Normal charging operation)

S4 Switch for charging on-board capacitor C6, or external battery through BT1

C1 Optional output filtering for VOUT – 10 uF recommended (see datasheet)

C2,C3,C4,C5 Not used

C6 50mF supercapacitor – storage for Powerharvester output

JP1 Not used

D1 LED for visual indication of power output

R1 Resistor for LED (D1)

R2 Not used

R4 Not used

R5 Resistor for max output voltage adjustment (see datasheet for R5+R6 selection)

R6 Resistor for max output voltage adjustment (see datasheet for R5+R6 selection)

BT1 External battery connection

J1 SMA connector for antenna or RF input (add DC block for DC short antenna)

J2 Connector for add-on boards

Connector on board: FCI – P/N: 52601-G10-8LF

Mating connector: Sullins – P/N: SFH11-PBPC-D05-ST-BK

U2 P1110 Powerharvester receiver (see datasheet for pin descriptions)

P1110-EVB, Rev C 2015/06 © 2015 Powercast Corporation Page 2

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P1110-EVB Electrical Schematic

P1110-EVB, Rev C 2015/06 © 2015 Powercast Corporation Page 3