Solar cell I-V curves and equivalent circuitee.sc.edu/personal/faculty/simin/ELCT566/21 Solar Cells...

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1 S Ph qV I I I kT exp = Solar cell I-V curves and equivalent circuit

Transcript of Solar cell I-V curves and equivalent circuitee.sc.edu/personal/faculty/simin/ELCT566/21 Solar Cells...

1S PhqVI I IkT

exp⎡ ⎤⎛ ⎞= − −⎜ ⎟⎢ ⎥⎝ ⎠⎣ ⎦

Solar cell I-V curves and equivalent circuit

Open-circuit solar cell

the current is zero; the solar cell delivers maximum voltage;The output power P = I ×V =0

1 0ocS ph

qVI I I

kTexp

⎧ ⎫⎡ ⎤⎛ ⎞⎪ ⎪= − − =⎨ ⎬⎢ ⎥⎜ ⎟⎝ ⎠⎪ ⎪⎣ ⎦⎩ ⎭

The open-circuit voltage, at I=0:

Note, the maximum achievable VOCmax = Vbi

Short-circuit solar cell

the voltage across the diode is zero; the solar cell provides maximum current into the circuit;The output power P = I ×V =0

The short-circuit current, at V=0:

0

1V

sc S phqVI I IkT

exp=

⎧ ⎫⎡ ⎤⎛ ⎞= − −⎨ ⎬⎜ ⎟⎢ ⎥⎝ ⎠⎣ ⎦⎩ ⎭

Solar cell with an arbitrary load

The dashed region shows the range of external bias where the energy is generated: Pdis=V×I < 0

Equivalent circuit of the solar cell with active load.

VL

1S PhqVI I IkT

exp⎡ ⎤⎛ ⎞= − −⎜ ⎟⎢ ⎥⎝ ⎠⎣ ⎦

Diode equation:

0L LV V or V V;+ = =−

Load equation:

L L LI V R V R/ /= =−

Kirchhoff voltage law:

“Load line”

The output power of the solar cell

The condition for maximum power

This leads to the equation:

(Here kB is the Boltzmann constant, same as k)

1

m m

m

qV kT qV kTmS S ph

qV kT mph S

qVI e I e I

kTqV

I I ekT

/ /

/

;+ ≈

⎛ ⎞≈ +⎜ ⎟

⎝ ⎠

Compare Vm to the open-circuit voltage VOC:

From this, 1 mm OC

qVkTV V lnq kT

⎛ ⎞= − +⎜ ⎟⎝ ⎠

Note that

From this, the optimal voltage can be estimated:

OCqV kTph SI I e /=

( )1 0 026 1 1 0 026 0 096mqVkT ln Vq kT

. ln / . .⎛ ⎞+ ≈ + =⎜ ⎟

⎝ ⎠Also, note that ln(x) is a slow function of x. Hence,

1 1m OCqV qVln ln

kT kT⎛ ⎞ ⎛ ⎞+ ≈ +⎜ ⎟ ⎜ ⎟

⎝ ⎠ ⎝ ⎠

The optimal voltage is then: 1 OCm OC

qVkTV V lnq kT

⎛ ⎞≈ − +⎜ ⎟

⎝ ⎠

The optimal current of the solar cell(corresponding to the maximum output power)

Given the optimal voltage is Vm, the corresponding maximum current can be found as

1mm S Ph

qVI I I

kTexp⎡ ⎤⎛ ⎞= − −⎢ ⎥⎜ ⎟

⎝ ⎠⎣ ⎦

1 OCm OC

qVkTV V lnq kT

⎛ ⎞= − +⎜ ⎟

⎝ ⎠Where and ph

OCS

IkTV lnq I

⎛ ⎞≈ ⎜ ⎟

⎝ ⎠

after transformations, 1m phm

kTI IqV

⎛ ⎞=− −⎜ ⎟

⎝ ⎠

Note that kT/q y0.026 V and hence, under strong excitation

kT/(qVm) << 1 and Im ≈ -Iph

Measured current-voltage characteristics of a high efficiency silicon solar cell. Open circle voltage, Voc = 0.6411 V, short-circuit current density, Jsc = 35.48 mA/cm2, fill factor 0.822, efficiency 18.70%. Open circle denotes the maximum power point. (after M. A. Green, A. W. Blakers, J. Shi, E. M. Keller, and S. R. Wenham, IEEE Trans. Electron. Dev., ED-31, No. 5, p. 679, 1984, © IEEE, 1984).

Solar cell fill factor

The maximum voltage that the solar cell can develop is VOC;The maximum current of the solar cell is ISC.If the solar cell could simultaneously deliver the maximum voltage and the maximum current, the maximum power would be PMM = VOC×ISCThe actual power is given by Pm = Vm×ImThe solar cell fill factor is thus defined as

VOC

ISC PMM

m m

SC OC

I VFF

I V=

Solar cell conversion efficiency

The "standard" solar radiation (known as the "air mass 1.5 spectrum") has a power density of 1000 watts per square meter. Thus, a 12% efficiency solar cell having 1 m² of surface area in full sunlight (at solar noon at the equator) will produce 120 watts of power.

A solar cell's energy conversion efficiency (η, "eta"), is the percentage of power converted from absorbed light to electrical energy

Solar cell design issues

A schematic of a simple conventional solar cell.

Effect of series resistance on the I-V characteristic of a solar cell

Solar cell design issues

Lifetime τp and diffusion length Lp of holes in n-type Si vs. donor density. T = 300 K.

Solar cell design issues

Lifetime τn and diffusion length Ln of electrons in p-type Si vs. acceptor density. T = 300 K.

Solar cell design issues

The absorption coefficient vs. photon energy

Theoretical max. efficiency as a function of semiconductor band gap