Single N-channel MOSFETRev.A May2013 Pag5 TypicalCharacteristics Single N-channel MOSFET Test...
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http://www.elm-tech.com Rev.1.0 ELM59498A-S 1 / 5 ■General description ■Features ■Maximum absolute ratings ■Thermal characteristics Parameter Symbol Typ. Max. Unit Maximum junction-to-ambient Rθja 62.5 °C/W Parameter Symbol Limit Unit Drain-source voltage Vds 100 V Gate-source voltage Vgs ±20 V Continuous drain current(Tj=150°C) Ta=25°C Id 10 A Ta=70°C 8 Pulsed drain current Idm 20 A Single pulse avalanche current Ias 8 A Power dissipation Tc=25°C Pd 40 W Tc=70°C 15 Operating junction temperature Tj 150 °C Storage temperature range Tstg - 55 to 150 °C ELM59498A-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. ■Pin configuration ■Circuit S G D Single N-channel MOSFET • Vds=100V • Id=10A • Rds(on) = 135mΩ (Vgs=10V) • Rds(on) = 145mΩ (Vgs=4.5V) Ta=25°C. Unless otherwise noted. Pin No. Pin name 1 GATE 2 DRAIN 3 SOURCE TO-252-3(TOP VIEW) 1 3 2 TAB
Transcript of Single N-channel MOSFETRev.A May2013 Pag5 TypicalCharacteristics Single N-channel MOSFET Test...
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■General description ■Features
■Maximum absolute ratings
■Thermal characteristicsParameter Symbol Typ. Max. Unit
Maximum junction-to-ambient Rθja 62.5 °C/W
Parameter Symbol Limit UnitDrain-source voltage Vds 100 VGate-source voltage Vgs ±20 V
Continuous drain current(Tj=150°C)Ta=25°C
Id10
ATa=70°C 8
Pulsed drain current Idm 20 ASingle pulse avalanche current Ias 8 A
Power dissipationTc=25°C
Pd40
WTc=70°C 15
Operating junction temperature Tj 150 °CStorage temperature range Tstg - 55 to 150 °C
ELM59498A-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance.
■Pin configuration ■Circuit
S
G
D
Single N-channel MOSFET
• Vds=100V• Id=10A• Rds(on) = 135mΩ (Vgs=10V)• Rds(on) = 145mΩ (Vgs=4.5V)
Ta=25°C. Unless otherwise noted.
Pin No. Pin name1 GATE2 DRAIN3 SOURCE
TO-252-3(TOP VIEW)
1 32
TAB
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■Electrical characteristics
Parameter Symbol Condition Min. Typ. Max. UnitSTATIC PARAMETERSDrain-source breakdown voltage BVdss Id=250μA, Vgs=0V 100 V
Zero gate voltage drain current Idss Vds=80V, Vgs=0V1
μATa=85°C 5
Gate-body leakage current Igss Vds=0V, Vgs=±20V ±100 nAGate threshold voltage Vgs(th) Vds=Vgs, Id=250μA 1.0 1.8 2.5 VOn state drain current Id(on) Vgs=10V, Vds≥5V 8 A
Static drain-source on-resistance Rds(on)Vgs=10V, Id=5A 120 135
mΩVgs=4.5V, Id=3A 125 145
Forward transconductance Gfs Vds=10V, Id=3A 12 SDiode forward voltage Vsd Is=2A, Vgs=0V 0.8 1.2 VMax. body-diode continuous current Is 2 ADYNAMIC PARAMETERSInput capacitance Ciss
Vgs=0V, Vds=50V, f=1MHz415 pF
Output capacitance Coss 40 pFReverse transfer capacitance Crss 20 pFSWITCHING PARAMETERSTotal gate charge Qg
Vgs=10V, Vds=50VId≡4.5A
10.0 15.0 nCGate-source charge Qgs 1.7 nCGate-drain charge Qgd 2.0 nCTurn-on delay time td(on)
Vgs=10V, Vds=50V RL=23.8Ω, Id≡2.1ARgen=1.0Ω
10 15 nsTurn-on rise time tr 10 15 nsTurn-off delay time td(off) 12 20 nsTurn-off fall time tf 10 15 ns
Single N-channel MOSFET
Ta=25°C. Unless otherwise noted.
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■Typical electrical and thermal characteristics
Single N-channel MOSFET
AFN9498100V N-Channel
Alfa-MOSTechnology Enhancement Mode MOSFET
©Alfa-MOS Technology Corp. www.alfa-mos.comRev.A May 2013 Pag3
Typical Characteristics
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Single N-channel MOSFET
AFN9498100V N-Channel
Alfa-MOSTechnology Enhancement Mode MOSFET
©Alfa-MOS Technology Corp. www.alfa-mos.comRev.A May 2013 Pag4
Typical Characteristics
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AFN9498100V N-Channel
Alfa-MOSTechnology Enhancement Mode MOSFET
©Alfa-MOS Technology Corp. www.alfa-mos.comRev.A May 2013 Pag5
Typical Characteristics
Single N-channel MOSFET
■Test circuit and waveform
