SiNA®/MAiA®

The modular system for anti-reflection coating and passivation

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High performance at lowest cost

Industrially proven high throughput PECVD reactor Excellent SiN and AlOx optical and passivation properties Best Cost of Ownership Modular construction system for high flexibility in throughput and technology Upgrade opportunity for back side passivation

SiNA®/MAiA® – Leading inline coating system

High up-time > 92% Compact design (best tpt/m²) High throughput (scalable to 3,400 wafers/h) Continuous material flow due to continuously operating coating process Meyer Burger OEM automation solutions for loading and unloading are available; other wafer handling systems can also be used

MAiA® – Multiple Access inline Apparatus for various coating processes

Modular based system offers greatest flexibility MAiA® can be customized to run different dielectric layers Usable for special gases like TMA, TMB, phosphine and also your process gas Standard application for back side passivation with aluminium-oxide Throughput up to 3,400 wafers/h

Increase cell efficiency through MB-PERC process with MAiA® system

Back side passivation (PERC) with aluminium oxide (Al2O3) Significant efficiency gain achievable:

- Multi crystalline silicon cell efficiency: >18.5% - Mono crystalline silicon cell efficiency: >20% Flexible PECVD tool

- Al2O3 coating on the back side plus standard AR coating on the front side in one tool and run

Contact Firing

Cell Tester& Sorter

Anti-Reflection Coating,

Passivation

Screen Printing

EmitterDiffusion

Phosphor Glass (PSG)

Etching

Saw DamageEtching &Texturing

Standard c-Si process

Phosphorous Doping

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MAiA®

SiNA®

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Leading PECVD coating systemPECVD process

Amorphous hydrogenated silicon nitride (SiN) layers applied by Plasma Enhanced Chemical Vapour Deposition (PECVD) are well suited as anti-reflection and passivation layers on crystalline silicon solar cells. These layers reduce the ratio of reflection on the wafer surface resulting in better sunlight utilization. These layers passivate defects on the silicon surface and in the crystal structure of the silicon bulk material by hydrogenation from the SiN layer leads to an improvement of the electrical properties of the si-licon and thus to a considerable increase of the light conversion efficiency of the solar cell.

SiNA® - Industrial proven system

Roth & Rau belongs to the leading sup-pliers of PECVD equipment in the photovoltaic industry and has been working in this field for a very long time. SiNA® is an industrially proven PECVD reactor which has been designed espe-cially for coating of solar cells. The system is based on an in-line concept where the wafer transport is effected by flat carriers. The highly productive microwave plas-ma sources provide a very homogeneous plasma with a high ratio of chemically active species. Due to excellent coating results and long term process stability SiNA® systems feature a high-up time and low cost of ownership.

High va

cuum

EmitterDiffusion

Phosphor Glass (PSG)

Etching

Anti-Reflection Coating, Rear and Front Side

Passivation (Al2O3, SiNx)Laser

AblationScreenPrint

ContactFiring

MB-PERC process

Anti-Reflection Coating,

Passivation

Anti-Reflection Coating,

Passivation

Anti-Reflection Coating,

Passivation

Anti-Reflection Coating3 PECVD-Layer >>> One system only: MAiA®

MAiA® - Flexible coating system

Some novel solar cell concepts require further and new coating techniques. Roth & Rau accommodates this demand for flexibly configurable coating equipment with the MAiA® platform. MAiA® is a development of the pro-ven anti-reflection coating equipment SiNA® and is capable of coating front and back side of the wafers with materials like silicon nitride, silicon oxide or aluminium oxide within one machine and in one run.

Entry Load Lock(Load Lock Module)

Heat(Buffer Module) Process Module Cooling

(Buffer Module)Exit Load Lock(Load Lock Module)

MAiA® coating system with two process chambers

Contact Firing

Cell Tester& Sorter

Anti-Reflection Coating,

Passivation

Screen Printing

EmitterDiffusion

Phosphor Glass (PSG)

Etching

Saw DamageEtching &Texturing

Standard c-Si process

EmitterDiffusion

Phosphor Glass (PSG)

Etching

Anti-Reflection Coating, Rear and Front Side

Passivation (Al2O3, SiNx)Laser

AblationScreenPrint

Contact Firing

MB-PERC process

Phosphorous Doping

405

1080

Meyer Burger Global AG, globalsales@meyerburger.com, www.meyerburger.comDesigned and manufactured by Roth & Rau AG

We

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the

right

to m

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refle

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g te

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(03/

2014

)SiNA® 3400 MAiA®

2in1 3400

Module configuration

Gross TpT [wph] (@6“) 3,400* 3,400*

Net TpT [wph] (@6“) 3,200 3,180

Cycle time / carrier [s] 25 25

No. of plasma sources 6 SiN 2 AlOx + 6 SiN

No. of total chambers 5 9

Uptime [%] > 94* > 93*

Yield − (mech./optical) [%] > 99.5 - (99.9 / 99.6)

Tray size [mm] 1110 x 765

Wafer / tray [pcs] 24 (6x4)

Maintenance cycle time [h] 160

Wafer specificationAll common available wafer sizes as well as wafer shapes can be processed,

number of wafers per carrier may change accordingly as well as final system throughput

L T4PM U6PMU6PML

SiNA MAiA 2in1

Coating Layer SiN SiN SiN SiN AlOx AlOx

Wafer Multi Mono Multi Mono Multi Mono

Layer Parameter – Status

Tk [nm] 80 ± 5 92 ± 5 80 ± 5 92 ± 5 23 ± 5 23 ± 5

Tk uniformity deviation p-t-p ± 3% ± 4% ± 3% ± 4% ± 5% ± 5%

Tk uniformity deviation w-t-w ± 3% ± 4% ± 3% ± 4% ± 5% ± 5%

Tk uniformity deviation r-t-r ± 2% ± 3% ± 2% ± 3% ± 2.5% ± 2.5%

RI 2.1 ± 0.05 2.1 ± 0.05 2.1 ± 0.05 2.1 ± 0.05 1.65 ± 0.05 1.65 ± 0.05

RI uniformity deviation p-t-p ± 1.5% ± 1.5% ± 1.5% ± 1.5% ± 2% ± 2%

RI uniformity deviation w-t-w ± 1.5% ± 1.5% ± 1.5% ± 1.5% ± 1.5% ± 1.5%

RI uniformity deviation r-t-r ± 1.5% ± 1.5% ± 1.5% ± 1.5% ± 1.5% ± 1.5%

Options

Technical data at a glance

3110

3001

2470

2131

LM +BMI 6PM (SiN/6Q) UM

6266

5028

3610

1990 2220 1990

6200

BMO +

LM +BMI

6PM (SiN/6Q)

BMO + UM

* With industrial proven standard recipe (Roth & Rau)