Simultaneous Supply, Threshold and Width Optimization for Low-Power CMOS Circuits
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Transcript of Simultaneous Supply, Threshold and Width Optimization for Low-Power CMOS Circuits
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Simultaneous Supply, Simultaneous Supply, Threshold and Width Threshold and Width Optimization for Low-Optimization for Low-Power CMOS CircuitsPower CMOS Circuits
With an aside on System based shutdown.
Gord AllanPhD Candidate
ASIC Design
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Factors vs Power and Factors vs Power and DelayDelay
Changing Vt Dyn Stat DelayThreshold
Changing VDD Dyn Stat DelaySupply
Changing Width W Dyn Stat Delay
Delay = A *C/(V*K) Pload = C*V2 Psc = f(tr/f)*f(V3)*f(K)Pstat = Ileak*V
Where: A = 1/(1-n) * [2n/(1-n) + ln(3-4n)], n=Vt/VDD
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Reducing Vt and VDDReducing Vt and VDD
Lower Vt so that we can reduce VDD further
Ideal when Power Dynamic = Power Static
Example: - 600 gates - 18 gates deep - Critical Delay = 3.3 ns
Vt VDD Static Dyn Total0.7 2.5V .03aW 260fW 260fW
0.13 0.4V 9 fW 6 fW 15fW
Vt
StaticPower
1
2
3
4
0 0.1 0.2 0.3 0.4 0.5
Vt / Vdd
A ->
Del
ay
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An Aside: System An Aside: System ShutdownShutdown
If you’re not using something - TURN it OFF!
If it dosen’t need speed, TURN it DOWN!Aka. “Predictive System Shutdown and Other Architectural Techniques for Energy Efficient Programmable Computation,” Srivastava, et al.
But When and How?
• When - Using user history to predict best time to sleep- There are costs (time and power) to go to sleep/awake- Voltage regulation problems.
• How - Hard Enough in normal circuits (clock gating, supply red)- What to do when dynamic power is an issue? (cutting off VDD is tough and poses other problems)
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Back to OptimizationBack to Optimization
How do we pick VDD, Vt, and Ws given a clk freq?
A(2)
E(2) F(1) G(1)
B(4)
H(1)
I(1)
D(1)C(1)
• Draw Circuit
• Assign Delay Estimates (based on fan-out)
• Find Critical Path
• Assign Maximum Delays (weighted to estimates) along most critical path
• Assign Maximum Delays to other gates on next most critical path, etc...
A(2)
E(2) F(1) G(1)
B(4)
H(1)
I(1)
D(1)C(1)
Eg. Tclk = 8 ns
1 nS1 nS
4 nS
2 nS
2 ns
2 ns
2 ns
4*2/3 = 2.7 nS 1.3 nS
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Pseudo-Code ProcedurePseudo-Code Procedure
Gives optimal VDD, Vt and W for all gates such that timing is met. NB: Pwr - f(switching activity)
Complexity depends on number of gates and quantization of parameters
Binary Search technique is used for large circuits
for(VDD from 0.1 to 3.3) for(Vt from 0.1 to 0.7) for each gate for(W from 1 to 100)
calculate delay if lower than Dmax pick W
calculate total power dissipation
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ResultsResultsCircuit A: s349 - 226 gates, depth 28 Benchmark: Vdd=3.3V, Vt=0.7V
= 0.5 Optimum: Vdd=0.7V, Vt=0.1V Power Savings of 54x
Circuit B: s526 - 596 gates, depth 18 Benchmark: Vdd=2.5V, Vt=0.7V = 0.005 Optimum: Vdd=0.4V, Vt=0.13V Power Savings of 18x
1.0E-20
1.0E-18
1.0E-16
1.0E-14
1.0E-12
1.0E-10
Abnch Aopt Bbnch Bopt
StaticDymanic
Short Cct
Total
Static
Dymanic
Short Cct
Total
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Problems for Future Problems for Future WorkWork
Perception - Static power is Bad!
Shutdown
Variation of low Vt due to process issues.- Drags improvements from 20x to 6x with 50% variation- How do we get a reliable and efficient low Vt?
System on a chip supplies - want > 1V. Noise issues.
Variation of Switching activities and their effect.
Low Vt - Great for pass logic! Exploit the benefits.
Multiple Vt circuits - advantages?
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Primary ReferencesPrimary References
“Simultaneous Power Supply, Threshold Voltage, and Transistor Size Optimization for Low-Power Operation of CMOS Circuits,” Pant, De, Chatterjee, IEEE Trans. on VLSI Systems, Vol. 6, No. 4, Dec 1998
“Predictive System Shutdown and Other Architectural Techniques for Energy Efficient Programmable Computation,” Srivastava, Chandrakasan, Brodersen, IEEE Trans. on VLSI Systems Vol. 4, No.1, March 1996
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Appendix: More ResultsAppendix: More ResultsCircuit A: s349 - 226 gates, depth 28 Benchmark: Vdd=3.3V, Vt=0.7V
=0.5 Optimum 1: Vdd=0.7V, Vt=0.1V Savings of: Power 54x Area of 64% =0.005 Optimum 2: Vdd=0.6V, Vt=0.1V Savings of: Power 27x Area of 59%
Circuit B: s526 - 596 gates, depth 18 Benchmark: Vdd=2.5V, Vt=0.7V = 0.5 Optimum 1: Vdd=0.3V, Vt=0.1V Savings of:
Power 67x Area of 8% = 0.005 Optimum 2: Vdd=0.4V, Vt=0.13V
Savings of: Power 18x Area of 20%
1.0E-20
1.0E-19
1.0E-18
1.0E-17
1.0E-16
1.0E-15
1.0E-14
1.0E-13
1.0E-12
1.0E-11
1.0E-10
Abnch Aopt Abnch Aopt Bbnch Bopt Bbnch Bopt
Static
Dymanic
Short Cct
Total