SILICON RF DEVICES - Mitsubishi · PDF filesilicon rf devices fet hybrid ic map for selection...
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SILICON RF DEVICES
Transcript of SILICON RF DEVICES - Mitsubishi · PDF filesilicon rf devices fet hybrid ic map for selection...
SILICON RF DEVICES
FETSilicon RF Devices
Hybrid IC
MAP ForSELECTION
PRODUCTLIST
� HIGH OUTPUT POWER Si MOS FET (DISCRETE)
�: New Product ��: Under Development
Better Performance for Radio Communication NetworkMitsubishi Electric Silicon RF Devices are Key parts of RF Power Amplifications for various kind of Mobile Radio,
Professional Mobile Radios, Amateur Radios and TELEMATICS for automotive.
Mitsubishi Electric Silicon RF Devices strongly support for Radio communication network.
LINE UP
SELECTION MAP
: 12.5V Operation
: 7.2V Operation
: 3.6V Operation
7.2v Operation High OutputPower Si MOS FET (Discrete)
12.5v Operation High OutputPower Si MOS FET (Discrete)
9.6v Operation High OutputPower Si MOS FET Module
7.2v Operation High OutputPower Si MOS FET Module
12.5v Operation High OutputPower Si MOS FET Module
3.6V Operation High OutputPower Si MOS FET (Discrete)
Page
1Page
3~4
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3
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3
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2Page
5
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2Page
5
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2Page
5~6
Fr e q u e n c y [M H z]
Ou
tpu
t P
ow
er
[W]
10
5
50
100
10
5
50
100
10 30 135 175 300 1GHz900700520
10 30 135 175 300 1GHz900700520
RD15HVF1
RD70HUP2�
RD35HUP2��
RD60HUF1/RD60HUF1C��
RD30HUF1RD30HVF1
RD06HVF1
RD00HVS1
RD100HHF1/RD100HHF1C��
RD45HMF1
RD20HMF1
RD70HHF1/RD70HHF1C��
RD16HHF1
RD06HHF1
RD00HHS1
RD70HVF1/RD70HVF1C��
RD05MMP1
RD12MVP1/RD12MVS1
RD02MUS1B
RD01MUS2B/RD01MUS3��
RD07MUS2B
RD09MUP2RD08MUS2��
RD04LUS2
RD02LUS2
RD04HMS2
RD10MMS2
1
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NPA
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� HIGH OUTPUT POWER Si MOS FET MODULE
��: Under Development
: 12.5V Operation
: 9.6V Operation
: 7.2V Operation
: 12.5V Operation
Fr e q u e n c y [M H z]
Fr e q u e n c y [M H z]
RA60H1317M/1317M1A/1317M1B
RA80H1415M1
RA60H3847M1/3847M1A/4047M1/4452M1/4452M1A
RA35H1516M
RA33H1516M1
RA30H3340M/3847M1A/4047M/4047M1/4452M/4452M1A/4552M1
RA45H7687M1
RA20H8087M RA20H8994M
RA45H8994M1
RA30H0608M
RA45H4045MR/4047M/4452M
RA13H3340M/4047M/4452M
RA07H3340M/4047M/4452MRA08H3843MD/4547MD
RA30H1317M/1317M1/1317M1A
RA30H1721M
RA07H0608M
RA30H2127M
RA13H1317M
RA08H1317M
RA13H8891MA/8891MB
RA03M8894M
RA55H3340M/3847M/4047M/4452M
RA08N1317M
RA07N3340M/4047M/4452MRA07M0608M
RA02M8087MDRA03M8087M
RA07M3340M/4047M/4452M
RA07M3843MRA07M2127M
RA03M3540MD/4043MD/4547MD
RA07M1317M
Ou
tpu
t P
ow
er
[W]
60
80
50
40
30
20
10
60
80
50
40
30
20
10
68 94188987080652033027021817513588
68 94188987080652033027021817513588
� HIGH OUTPUT POWER Si MOS FET MODULE (SERFACE MOUNT TYPE)
Ou
tpu
t P
ow
er
[W]
10
5
50
100
10
5
50
100
10 30 135 175 300 1GHz900700520
10 30 135 175 300 1GHz900700520
RA60H1317MS1��
RA05H1317MS1�� RA05H3353MS1��
RA60H3847MS1��
RA60H4453MS1��
2
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ELECTIO
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CK
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PRODUCT LIST
� 3.6V OPERATION HIGH OUTPUT POWER Si MOS FET (DISCRETE)
Ta=25°C †: Gate Protection Diode
RD02LUS2RD04LUS2
Si, MOS†
Si, MOS†
25
25
15.6
46.3
3.6
3.6
Type Number StructureMax.ratings
VDSS [V] Pch [W]Vdd [V]
UHF
UHF
FrequencyBand
0.2
0.4
2.3
4.5
Po (Typ.)[W]
70
65
SOT-89
SLP
PackageType
� 7.2V OPERATION HIGH OUTPUT POWER Si MOS FET (DISCRETE)
Ta=25°C †: Gate Protection Diode ��: Under Development
Si, MOS†
Si, MOS
Si, MOS
Si, MOS
Si, MOS†
Si, MOS†
Si, MOS†
Si, MOS†
Si, MOS
Si, MOS
RD01MUS2B
RD02MUS1B
RA02MUS2��
RD05MMP1
RD07MUS2B
RD08MUS2��
RD09MUP2RD10MMS2RD12MVP1RD12MVS1
25
30
40
40
25
25
40
40
50
50
3.6
21.9
50
73
50
46
83
62
125
50
7.2
7.2
7.2
7.2
7.2
7.2
7.2
7.2
7.2
7.2
VHF
UHF
900
VHF
UHF
VHF
UHF
900
VHF
UHF
900
UHF
UHF
900
VHF
VHF
0.03
0.03
0.03
0.05
0.05
0.05
0.05
0.7
0.3
0.4
0.5
0.2
0.8
1
0.5
1
Pin [W]
Type Number StructureMax.ratings
VDSS [V] Pch [W]Vdd [V]
FrequencyBand
Po (Typ.)[W]
PackageTypePin [W]
Type Number StructureMax.ratings
VDSS [V] Pch [W]Vdd [V]
FrequencyBand
Po (Typ.)[W]
PackageTypePin [W]
1.4
1.6
1.5
3
3
3
3
6
7.2
8
7
8.5
9
12
12
12
75
70
65
65
65
65
65
46
65
63
58
65
60
58
57
57
SOT-89
SLP
SLP
PMM
SLP
SLP
PMM
SLP
PMM
SLP
� 12.5V OPERATION HIGH OUTPUT POWER Si MOS FET (DISCRETE)
Ta=25°C †: Gate Protection Diode �: New Product ��: Under Development ���: End of Life in 2017
RD00HHS1���
RD00HVS1���
RD04HMS2
RD06HHF1RD06HVF1
RD15HVF1
RD16HHF1RD20HMF1���
RD30HVF1���
RD30HUF1���
RD35HUP2��
RD45HMF1���
RD60HUF1���
RD60HUF1C��
RD70HHF1���
RD70HHF1C��
RD70HVF1���
RD70HVF1C��
RD70HUP2�
RD100HHF1���
RD100HHF1C��
Si, MOS
Si, MOS
Si, MOS†
Si, MOS
Si, MOS
Si, MOS
Si, MOS
Si, MOS
Si, MOS
Si, MOS
Si, MOS†
Si, MOS
Si, MOS
Si, MOS
Si, MOS
Si, MOS
Si, MOS
Si, MOS
Si, MOS†
Si, MOS
Si, MOS
30
30
40
50
50
30
50
30
30
30
40
30
30
30
50
50
30
30
40
50
50
3.1
3.1
50
27.8
27.8
48
56.8
71.4
75
75
166
125
150
150
150
150
150
150
300
176.5
176.5
12.5
12.5
12.5
12.5
12.5
12.5
12.5
12.5
12.5
12.5
12.5
12.5
12.5
12.5
12.5
12.5
12.5
12.5
12.5
12.5
12.5
HF
VHF
VHF
UHF
900
HF
VHF
VHF
UHF
HF
900
VHF
UHF
UHF
900
UHF
UHF
HF
HF
VHF
UHF
VHF
UHF
VHF
UHF
HF
HF
0.004
0.005
0.2
0.2
0.2
0.15
0.3
0.6
3
0.4
3
1
3
3
15
10
10
3.5
3.5
6
10
6
10
4
5
7
7
0.7
0.8
5.5
6
5
10
10
18
18
19
25
35
35
35
50
65
65
80
80
75
55
75
55
84
75
110
110
65
60
73
62
58
65
65
60
55
65
55
60
55
55
50
55
55
60
60
60
55
60
55
74
64
60
60
SOT-89
SOT-89
SLP
TO-220S
TO-220S
TO-220S
TO-220S
Ceramic (Small)
Ceramic (Small)
Ceramic (Small)
HPM005
Ceramic (Large)
Ceramic (Large)
Ceramic (Large)
Ceramic (Large)
Ceramic (Large)
Ceramic (Large)
Ceramic (Large)
HPM006
Ceramic (Large)
Ceramic (Large)
ηd (Typ.)[%]
ηd (Typ.)[%]
ηd (Typ.)[%]
3
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PS
ELECTIO
N M
AP
PRO
DU
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TA
PPLICATIO
NPA
CK
AG
E OU
TLINE
Note: Type number show the outline of products. For detail specif ication, Please confirm a formal specification.
� HIGH OUTPUT POWER Si MOS FET (Discrete Devices)
RA 07 M 4452 M� HIGH OUTPUT POWER Si MOS FET MODULE
Type Name Definition of Silicon RF Devices
Si MOS FET (Discrete)
Output Power (W)
Serial Number
Symbol
MNH
Voltage
7.2V9.6V12.5V
Operation Voltage (V)
Symbol
MNH
Voltage
7.2V9.6V12.5V
Operation Voltage (V)
Symbol
HVUM
Frequency Range
30MHz175MHz520MHz800MHz
Frequency Range (MHz)
Symbol
SFP
Segment
MoldFlange
Power Mold Mini
Outline
Module
Output Power (W)
4452 440~520MHz
1317 135~175MHz
Symbol(Example)
Frequency Range(Example)
Frequency Range (MHz)
Symbol
MG
Unit
MHzGHz
Frequency Unit
RD 07 M U S 2B
SOT-89 SLP TO-220S PMM
� 7.2V OPERATION HIGH OUTPUT POWER Si MOS FET (DUAL FET DISCRETE)
Ta=25°C †: Gate Protection Diode ��: Under Development
RD01MUS3��Si, MOS†
Si, MOS†
25
25
6.2
8.3
7.2
7.2
Type Number StructureMax.ratings
VDSS [V] Pch [W]Vdd [V]
UHF
UHF
FrequencyBand
0.001
0.1
0.15
1.8
Po (Typ.)[W]
60
70
ηd (Typ.)[%]
QFN (4mm)
PackageTypePin [W]
Ceramic (Small)HPM006 Ceramic (Large) HPM005
QFN (4mm)
4
LINE U
PS
ELECTIO
N M
AP
PRO
DU
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TA
PPLICATIO
NPA
CK
AG
E OU
TLINE
SiRF devices are compliant with the RoHS (2011/65/ EU).
PRODUCT LIST
RoHS: Restriction of the Use of Certain Hazardous Substances in Electrical and Electronic Equipment
H2S H2M/H2M(A) H11S
H54
H46S
H57
H61
H60
� 7.2V OPERATION HIGH OUTPUT POWER Si MOS FET MODULE
Ta=25°C *1: When Po=2.5W *2: When Po=6.3W ��: Under Development ���: End of Life in 2017
� 9.6V OPERATION HIGH OUTPUT POWER Si MOS FET MODULE
Ta=25°C ��: Under Development ���: End of Life in 2017
RA07N1317M��
RA07N3340M���
RA07N4047MRA07N4452MRA08N1317M���
12.5
12.5
12.5
12.5
12.5
136
330
400
440
135
174
400
470
520
175
0.02
0.02
0.02
0.02
0.02
9.6
9.6
9.6
9.6
9.6
7.5
7.5
7.5
7.5
8
43
43
43
43
50
H46S
H46S
H46S
H46S
H46S
Type Numberf [MHz]
min maxMax.ratings
Vdd [V]Pin [W]
Po (min)[W]
PackageTypeVdd [V]
� 12.5V OPERATION HIGH OUTPUT POWER Si MOS FET MODULE (SERFACE MOUNT TYPE)
Ta=25°C �: New Product
RA05H1317MS1�
RA05H3353MS1�
RA60H1317MS1�
RA60H3847MS1�
RA60H4453MS1�
17
17
17
17
17
135
330
135
378
440
175
527
175
470
527
0.01
0.01
4
4
4
12.5
12.5
12.5
12.5
12.5
5
5
60
60
60
45
45
55
50
50
H61
H61
H60
H60
H60
Type Numberf [MHz]
min maxMax.ratings
Vdd [V]Pin [W]
Po (min)[W]
PackageTypeVdd [V]
RA02M8087MD���
RA03M3540MD���
RA03M4043MD���
RA03M4547MD���
RA03M8087MRA03M8894MRA07M0608M���
RA07M1317MRA07M2127MRA07M3340M���
RA07M3843M���
RA07M3847M��
RA07M4047M���
RA07M4452M
9.2
9.2
9.2
9.2
9.2
9.2
9.2
9.2
9.2
9.2
9.2
9.2
9.2
9.2
806
350
400
450
806
889
66
135
215
330
378
378
400
440
869
400
430
470
870
941
88
175
270
400
430
470
470
520
0.01
0.01
0.01
0.01
0.05
0.05
0.03
0.02
0.02
0.05
0.05
0.05
0.05
0.05
7.2
7.2
7.2
7.2
7.2
7.2
7.2
7.2
7.2
7.2
7.2
7.2
7.2
7.2
1.2
3.2
3.2
3.2
3.6
3.6
7
6.5
7
7
7
7
7
7
30*1
34*2
34*2
34*2
32
32
45
45
45
40
40
40
40
40
H54
H54
H54
H54
H46S
H46S
H46S
H46S
H46S
H46S
H46S
H46S
H46S
H46S
Type Numberf [MHz]
min maxMax.ratings
Vdd [V]Pin [W]
Po (min)[W]
PackageTypeVdd [V]
ηT (min)[%]
ηT (min)[%]
ηT (min)[%]
5
LINE U
PS
ELECTIO
N M
AP
PRO
DU
CT LIS
TA
PPLICATIO
NPA
CK
AG
E OU
TLINE
� 12.5V OPERATION HIGH OUTPUT POWER Si MOS FET MODULE
Ta=25°C *: VGG1, VGG2 Separation type ��: Under Development ���: End of Life in 2017
RA07H0608M���
RA07H3340M���
RA07H4047M���
RA07H4452M���
RA08H1317M���
RA08H3843MD���
RA08H4547MDRA13H1317M���
RA13H3340M���
RA13H4047M���
RA13H4452M���
RA13H8891MA���
RA13H8891MB���
RA18H1213G1��
RA20H8087M���
RA20H8994M���
RA30H0608M���
RA30H0608M1��
RA30H1317M���
RA30H1317M1RA30H1317M1A*
RA30H1721M���
RA30H2127M���
RA30H2127M1��
RA30H3340M���
RA30H3340M1��
RA30H3847M1��
RA30H3847M1A*
RA30H4047M���
RA30H4047M1RA30H4452M���
RA30H4452M1��
RA30H4452M1A*
RA30H4552M1���
RA33H1516M1RA35H1516M���
RA45H4045MR���
RA45H4047M���
RA45H4452M���
RA45H7687M1*
RA45H8994M1*
RA55H3340M���
RA55H3847M���
RA55H4047M���
RA55H4452M���
RA60H1317M���
RA60H1317M1ARA60H1317M1B*
RA60H3340M1A*��
RA60H3847M1RA60H3847M1A*
RA60H4047M1���
RA60H4452M1RA60H4452M1A*
RA80H1415M1
13.2
13.2
13.2
13.2
13.2
17
18
17
17
17
17
17
17
17
17
17
17
17
17
17
17
17
17
17
17
17
17
17
17
17
17
17
17
17
17
17
17
17
17
17
17
17
17
17
17
17
17
17
17
17
17
17
17
17
17
68
330
400
440
135
380
450
135
330
400
440
889
880
1240
806
896
66
66
135
135
136
175
210
210
330
330
378
378
400
400
440
440
440
450
154
154
400
400
440
763
896
330
380
400
440
490
135
136
136
330
378
378
400
440
440
144
136
88
400
470
520
175
430
470
175
400
470
520
915
915
1300
870
941
88
88
175
175
174
215
270
275
400
400
470
470
470
470
520
520
520
520
162
162
450
470
520
870
941
400
470
470
490
520
175
174
174
400
470
470
470
520
520
148
174
0.03
0.02
0.02
0.02
0.02
1.4m
0.3m
0.05
0.05
0.05
0.05
0.2
0.001
0.2
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.01
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
12.5
12.5
12.5
12.5
12.5
13.2
12.5
12.5
12.5
12.5
12.5
12.5
12.5
12.5
12.5
12.5
12.5
12.5
12.5
12.5
12.5
12.5
12.5
12.5
12.5
12.5
12.5
12.5
12.5
12.5
12.5
12.5
12.5
12.5
12.5
12.5
12.5
12.5
12.5
12.8
12.8
12.5
12.5
12.5
12.5
12.5
12.5
12.5
12.5
12.5
12.5
12.5
12.5
12.5
12.5
7
7
7
7
8
6.3
7.9
13
13
13
13
13
13
18
20
20
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
33
40
45
45
45
45
45
55
55
55
55
45
60
60
60
60
60
60
60
60
60
80
60
38
40
40
40
40
15
17
40
40
40
40
30
35
20
25
25
40
40
40
40
45
40
40
40
40
40
40
40
40
42
40
40
40
42
50
50
35
35
35
33
33
35
38
35
43
35
40
45
45
40
40
40
40
40
40
50
H46S
H46S
H46S
H46S
H46S
H2S (6-pins)
H2S (6-pins)
H2S
H2S
H2S
H2S
H2S
H11S
H2M
H2S
H2S
H2S
H2M
H2S
H2M
H2M(A)
H2S
H2S
H2M
H2S
H2M
H2M
H2M(A)
H2S
H2M
H2S
H2M
H2M(A)
H2M
H57
H2S
H2RS
H2S
H2S
H2M(A)
H2M(A)
H2S
H2S
H2S
H2S
H2S
H2M
H2M(A)
H2M(A)
H2M
H2M(A)
H2M
H2M
H2M(A)
H2M
Type Numberf [MHz]
min maxMax.ratings
Vdd [V]Pin [W]
Po (min)[W]
PackageTypeVdd [V]
ηT (min)[%]
6
LINE U
PS
ELECTIO
N M
AP
PRO
DU
CT LIS
TA
PPLICATIO
NPA
CK
AG
E OU
TLINE
Precautions for the use of Mitsubishi Electric silicon RF power amplifier devices01.This general catalog do not guarantee the product specifications. Please confirm additional details regarding operation of these products from the formal specification sheet. For copies
of the formal specification sheets, please contact one of our sales offices from the list of contact addresses listed on the last page for further information.
02.RA series products (RF power amplifier modules) and RD series products (RF power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. In particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements. Examples of critical communications elements would include transmitters for base station applications and fixed station applications that operate with long term continuous transmission and a higher on-off frequency during transmitting, especially for systems that may have a high impact to society.
03.RA series and RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore appropriate ESD precautions are required.
04.In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.) to keep the case temperature for RA series products lower than 60deg/C under standard conditions, and less than 90deg/C under extreme conditions.
05.RA series products are designed to operate into a nominal load impedance of 50 ohms. Under the condition of operating into a severe high load VSWR approaching an open or short, an over load condition could occur. In the worst case there is risk for burn out of the transistors and smoking of other parts including the substrate in the module.
06.The formal specification includes a guarantee against parasitic oscillation under a specified maximum load mismatch condition. The inspection for parasitic oscillation is performed on a sample basis on our manufacturing line. It is recommended that verification of no parasitic oscillation be performed at the completed equipment level also.
07.For specific precautions regarding assembly of these products into the equipment, please refer to the supplementary items in the specification sheet.
08.Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it’s original form.
09.For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page of this manual.
10.Please refer to the additional precautions in the formal specification sheet.
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RD01MUS2B RD04LUS2
30mW 4W@440−520MHz
RD01MUS3 RD04LUS2
1mW 4W@440−520MHz
� 3.6V OPERATION RECOMMENDED LINE UP
RD01MUS2B RD08MUS2
50mW 8W@440−520MHz
RD01MUS2B RD07MUS2B
50mW 5W@806−870MHz
� 7.2V OPERATION RECOMMENDED LINE UP
RD01MUS2B RD07MUS2B
30mW 7W@135−175MHz@440−520MHz
� 12.5V OPERATION RECOMMENDED LINE UP
RD15HVF1 RD70HVF1C
0.3W 50W@135−175MHz
RD04HMS2 RD35HUP2
0.2W 35W@135−175MHz@440−520MHz
RD04HMS2 RD70HUP2
0.2W 70W@135−175MHz@440−520MHz
7
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ELECTIO
N M
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NPA
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PACKAGE OUTLINE
�SOT-89
UNIT: mm UNIT: mm
UNIT: mm( ): reference value
UNIT: mm( ): reference value
�TO-220S
�SLP �PMM
�Ceramic (Small) �Ceramic (Large)
2.5±
0.1
0.4±0.07
0.8MI
N
0.1 MAX
0.5±0.073.0
1.5±0.1
0.4±0.07
1.5±0.1
4.4±0.1
1.6±0.1
ø1.0
0.4 +0.03/‒0.05
1.5±0.1
3.9±
0.3
②
① ② ③
1.3±0.4
0.5+0.10/‒0.15
12.3
MIN 4.8
MAX
1.2±0.4
9.5MAX
5deg
4.5±0
.53.1
±0.6
0.8+0.10/‒0.15
2.5 2.5
9.1±0.7
12.3
±0.
63.2
±0.4
9±0.
4
3.6±0.2
① ②
②
③
0.2±0.05
0.75
±0.
050.
2±0.
054.
9±0.
15
1.0±
0.05
3.5±
0.05
2.0±0
.05
(0.25)
(0.2
2)
INDEX MARK(Gate)
6.0±0.15
4.6±0.053.3±0.050.8±0.05
(0.25)
(0.2
2)
①
③
②
8.0±0.27.0±0.2
5.6±
0.2
4.2±
0.2
0.65
±0.
2
2.6±0.20.95±0.2
0.2±0.05
TOP VIEW
SIDE VIEW
BOTTOM VIEWSIDE VIEW
④
②
INDEX MARK[Gate]
6.2±
0.2
1.8±
0.1
0.7±
0.1
Stand
off=m
ax0.05
(3.6
)
(4.5)
DETAIL A
DETAIL A
①
②③
Pin No.① Gate② Source③ Drain
Pin No.① Drain② Source③ Gate
Pin No.① Drain [output]② Source [GND]③ Gate [input]④ Source
Pin No.① Gate② Source③ Drain
UNIT: mm UNIT: mm* : The height of terminals shows root. ** : RDxxxxxC* : The height of terminals shows root.
①
②
③
14.0
±0.
43.
0±0.
4*5.1
±0.5
ø3.2±0.15
2.3±
0.3
4-C1
6.6±
0.3
0.10
+0.
05
‒
0.01
2.8±0.3
18.0±0.3
22.0±0.3
7.6±0.37.2±0.5
10.0
±0.
3
4‒C2
3.3±
0.2
ø3.2±0.15
18.5±0.25
24.0
±0.
6
5.0±0.3
25.0±0.37.0±0.5 11.0±0.3
+0.05‒0.01
0.1
6.1±0.5
4.5±0.7*
①
②
③
Pin No.① Drain② Source③ Gate
Pin No.① Drain② Source③ Gate
17.0
±0.
6**
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PACKAGE OUTLINE
UNIT: mm( ): reference value
�H2S
3.0±0.37.25±0.8
66.0±0.560.0±0.551.5±0.5 2-R2±0.5
17.0
±0.
54.
0±0.
3
ø0.45±0.15
21.0
±0.
59.5
±0.5
14.0
±1
2.0±
0.53.
1+0.
6/‒0
.40.
09±
0.02
2.3±
0.3
7.5±
0.5
(9.8
)
12.0±116.5±1
43.5±155.5±1
(50.4)
①② ③ ④ ⑤
�HPM006
UNIT: mm
Pin No.① RF Input(Pin)② Gate Voltage(VGG)③ Drain Voltage(VDD)④ RF Output(Pout)⑤ RF Ground(Fin)
Pin No.① DRAIN② SOURCE (COMMON)③ DRAIN④ SOURCE (COMMON)⑤ SOURCE (COMMON)⑥ GATE⑦ SOURCE (COMMON)⑧ GATE
�HPM005
�QFN (4mm)
8.40±0.10
1.47±0.05
7.49±0.16
3.625±0.075
2.395±0.075
0.22±0.05
0.625±0.075
13.00±0.10
(2.10)(1.70)
(3.60)
(6.40)
7.10+0.16‒0.14
INDEX MARK (GATE)
①②
①③②
Pin No.① DRAIN② GATE③ SOURCE (COMMON)
UNIT: mm( ): reference value
UNIT: mm( ): reference value
4.00
±0.
15
2.50
2.50
(0.50)
(0.50)
0.40±0.10
4.00±0.15
INDEX MARK
0.76±0.050.76±0.05
0.20±0.05
0.20 ①
㉔ ㉓ ㉒ ㉑ ⑳ ⑲
⑦ ⑧ ⑨ ⑩ ⑪ ⑫
②③④⑤⑥
⑱⑰⑯⑮⑭⑬
2.30
2.30
Pin No.① N.C.② N.C.③ N.C.④ Drain2 (Output2)⑤ Drain2 (Output2)⑥ Drain2 (Output2)⑦ N.C.⑧ N.C.⑨ N.C.
⑩ N.C.⑪ N.C.⑫ N.C.⑬ Gate2 (Input2)⑭ Gate2 (Input2)⑮ Gate2 (Input2)⑯ N.C.⑰ N.C.⑱ N.C.
⑲ Drain1 (Output1)⑳ N.C.㉑ N.C.㉒ N.C.㉓ N.C.㉔ Gate1 (Input1)㉕ Source (GND)
4.025
±0.0
754.
00±
0.15
3.625±0.075
4.25±0.10
6.30
±0.
20
7.00
±0.
1013
.00±
0.10
19.50±0.10
15.60±0.15
23.70±0.10
0.30±0.10
0.625±0.075
INDEX MARK(GATE)
INDEX MARK(GATE)
X1X1
’
0.625±0.075
1.47±0.05
X1-X
1’ S
ECTI
ON
1.70
±0.
10 0.22±0.05
2.395±0.075
① ②
④
③
⑤
⑥ ⑧⑦
⑥⑦
④
⑧
⑤
①③ ②
Pin No.① GND② GND③ GND④ GND⑤ GND⑥ Vgg⑦ GND
⑧ GND⑨ RF Input(Pin)⑩ GND⑪ GND⑫ GND⑬ RF Output(Pout), Vdd⑭ GND
�H60
UNIT: mm
① ⑦② ③ ④ ⑤ ⑥
⑭ ⑧⑬ ⑫ ⑪ ⑩ ⑨
3.8×6＝22.8
3.8×5＝19.0 4.0±0.511.4 11.6
27.4
2.28.0 MAX
29.0 MAX
2.61.6
ø2.022.3
19.8
24.0
0.9
3.5
0.7
13.7±0.7
2.1±
0.6
4.0±
0.5
0.6
①
Pin No.① Vgg2② NC③ Vdd1④ GND⑤ Vgg1⑥ RF Input(Pin)
⑦ NC⑧ Vdd2 @refer to Data Sheet⑨ GND⑩ RF Output(Pout)⑪ GND
�H61
UNIT: mmtolerance of no designation ; ±0.15
①
⑦
② ③ ④ ⑤
⑥⑧⑩
①⑪
⑨
9.0
9.0
1.4 MAX8.6
6.0
7.7
0.9
0.9
0.5
0.5
1.43.67.2
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UNIT: mm( ): reference value
UNIT: mm( ): reference value
UNIT: mm( ): reference value
Pin No. [H2M]① RF Input (Pin)② Gate Voltage(VGG)③ Drain Voltage(VDD)④ RF Output(Pout)⑤ RF Ground(Fin))
Pin No. [H2M(A)]① RF Input (Pin)+VGG1② Final Stage Gate Voltage(VGG2)③ Drain Voltage(VDD)④ RF Output(Pout)⑤ RF Ground(Fin)
Pin No.① RF Input(Pin)② Gate Voltage(VGG)③ Drain Voltage(VDD)④ RF Output(Pout)⑤ RF Ground(Fin)
Pin No.① RF Input(Pin)② Gate Voltage(VGG)③ Drain Voltage(VDD)④ RF Output(Pout)⑤ RF Ground(Fin)
Pin No.① RF Input(Pin)② First Stage Gate Voltage(VGG1)③ Final Stage Gate Voltage(VGG2)④ Drain Voltage(VDD)⑤ RF Output(Pout)⑥ RF Ground(Fin)
Pin No.① RF Input(Pin)② Gate Voltage(VGG)③ Drain Voltage(VDD)④ RF Output(Pout)⑤ RF Ground(Fin)
�H2RS
�H11S
�H2M/H2M(A)
① ② ③ ⑤④
67±1
18±
1(9
.9)
7.3±
0.5
(2.6
)
3.1+
0.6/
‒0.4
(3.2
6)4±
0.519.4
±1
15±
1
0.6±0.2
60±149.8±1
56±144±1
17±112.5±1
2‒R2±0.5
10.7±
1
(49.5)
60.5±157.5±0.550.4±1 2‒R1.6±0.2
ø0.45±0.15
11±
0.5
6±1
14±
0.5
51.3±143.3±1
21.3±18.3±1
(6.4
)
2.3±
0.3
0.09
±0.
023.
3+0.
8/‒0
.4
① ② ③ ④ ⑤
3.0±0.37.25±0.8
66.0±0.560.0±0.551.5±0.5 2‒R2±0.5
17.0
±0.
54.
0±0.
3
ø0.45±0.15
21.0
±0.
59.5
±0.5
3.1+
0.6/
‒0.4
0.09
±0.
02
2.3±
0.3
7.5±
0.5
(9.8
)
10.5±122.5±1
49.5±154.0±1
(50.4)
④ ③ ②① ⑤
14.0
±1
2.0±
0.5
�H54
UNIT: mm( ): reference value
�H57
14.4
7.2±0
.5
46.041.030.8 2‒R1.5±0.3
12.0
0.6±0.03
3.0
10±
1
(6.3
)
(2.3
)
13.00±0.818.08±0.8
25.70±0.835.86±0.8
(6.3)
(2.3)
3.0+0
.6‒0
.4
3.0+0.6‒0.4
① ② ③ ④ ⑤
26.6±0.221.2±0.2
(19.2)
23.9±1.0
2.3±
0.4 18.8±1.0
6.1±1.0
13.7±1.010.4±1.0
6.0±
1.0
1.5±
0.2
10.0
±0.
26.0
±0.2
(5.4
)3.
5±0.
2
7.4±
0.2
6.0±0
.2
30.0±0.2
0.45±0.15
(1.7)(4.4)
(1.5
)
(5.4)
Area "A"
① ② ③ ④ ⑤⑥
0.05
+0.0
4‒0
2- R1.5±0.1
UNIT: mm( ): reference value
tolerance of no designation ; ±0.5
Pin No.① RF Input(Pin)② Gate Voltage(VGG)③ Drain Voltage(VDD)④ RF Output(Pout)⑤ RF Ground(Fin)
UNIT: mm( ): reference value
tolerance of no designation ; ±0.5
�H46S
26.6±0.221.2±0.2
(19.2)
23.9±1.0
2.3±
0.4
18.8±1.0
6.1±1.013.7±1.0
6.0±
1.0
1.5±
0.2
10.0
±0.
26.0
±0.2
(5.4
)3.
5±0.
2
7.4±
0.2
6.0±0
.2
30.0±0.2
0.45±0.15
(1.7)(4.4)
(1.5
)
(5.4)
Area "A"
① ② ③ ④⑤
0.05
+0.0
4‒0
2- R1.5±0.1
10
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SILICON RF DEVICES
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H-CX624-N KI-1609 Printed in Japan (TOT)
New publication effective Sep. 2016.Specifications subject to change without notice.
©2016 Mitsubishi Electric Corporation
