SiC Schottky Barrier Diode - panjit.com.tw
Transcript of SiC Schottky Barrier Diode - panjit.com.tw
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For the Excellence in System DesignSiC Schottky Barrier Diode
Features • Low conduction loss • Zero reverse recovery • Temperature independent switching • High surge current capability • High ruggedness • High junction temperature 175oC
Target Application
• PV Inverter• ESS / BMS
• Server Power• Telecom Power• PC Power
• EV Charging Pile• UPS• Industrial Motor
• Home Appliance• Digital TV
Green EnergyPower System Industrial Consumer
Top Metal
P+
N- Epi Layer
Buffer Layer
Back Metal
N+ SiC Substrate
Ohmic contact
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SiC SBD Line-Up
Performance
Specification TO-220AC
Series Current(A) Product ID Vf Typ.
(V)IFSM
(A)CJ
(pF)
SiC SBD650V
SiC SBD1200V
4681012162058101520
1.51.51.51.51.51.51.51.51.51.51.51.5
61319273448631327375978
20283244527288406476
120152
PCDP0465G1PCDP0665G1PCDP0865G1PCDP1065G1PCDP1265G1PCDP1665G1PCDP2065G1PCDP05120G1PCDP08120G1PCDP10120G1PCDP15120G1PCDP20120G1
Temperature coefficientSiC Diode 650V / 10A
SiC Diode 650V / 10A
800W CCM Boost PFC, Vin = 110Vac/60Hz, Vout = 400V, Fsw = 65kHzSystem Evaluation:
Boost Pre- charge diode
Boost diodeDUT
Load
NTC
VF Temperature Variation [%](25c to 125c)
Forw
ard
Cur
rent
, IF [
A]
PTC
Forw
ard
Cur
rent
, IF [
A]
Forward Voltage, VF [V]
Output Power, POUT [W]
Sys
tem
Effi
cien
cy, η
[%]