Server Forum 2014 Copyright © 2014 [SK hynix]

Server market driver

Internet data center [+14% YoY in ‘14]

Public cloud growth [+18% YoY in ‘14]

Industry demand

High performance server

Target optimized server

Memory demand

• Higher density

• Lower power

• Higher bandwidth

• Features that fulfill industry needed

SK hynix DDR4 solution

• Up to 128GB density with new stacking capability

• Over 20 new features

Big data demands higher performance memory solution for server

1.8V

1.5/ 1.35V

1.2V

DDR2 DDR3 DDR4

800Mbps

1866Mbps

3200Mbps

2133Mbps

Bandwidth

Imp

rove

men

ts o

ver

Bas

elin

e (%

)

[ Simulation Condition ]

• Baseline: DDR3-2133, 4Gb x8 device with 8 banks per rank, 64K rows per bank, 1KB page size

• DDR4-2133: 4Gb x8 device with 16 banks per rank, 32K rows per bank, 1KB page size

• Based on the 4-channel, 8-core configuration

• Workloads: Memory intensive workloads from SPEC2006CPU and commercial workloads

• 2 ranks per channel used

DDR4 boasts avg of 8.6% higher performance than DDR3 at 2133Mbps

due to doubled banks.

-1

1

3

5

7

9

11

13

15

Performance (Total # of clock cycles)

lbm_x8 astar_x8 comm1_x8 comm2_x8 comm1-comm2_x4 mcf_x8 milc_x8

Enable PPR MR4[A13=1]

Enter Failed Row Address

Column address irrelevant

MRS ACT WRA PRE MRS

tMOD tRCD tPGM = 1S,,

Disable PPR MR4[A13=0]

tPGM_Exit

Valid CMD

tPGMPST

Row Repair

Repair end

PPR process

PPR enables host to repair failed rows in the field • User can repair bit failures electrically • DDR4 supports 1 Repair Row per bank group

Row 0

Row 1

Row 2

Row 3

Row (Redunduncy)

Row 0

Row 1

Row 2

Row 3

Row (Redunduncy)

PPR

Command

by User

Single row failure detection Completion of repair

Due to the long programing time, host has to re-boot DRAM to do hard-PPR which

makes hard-PPR usage restricted.

Soft-PPR completes in-field repair feature by making DRAM to repair failed row

during operation with short programming time.

Programming Time Resource Method

Hard PPR >1s 1 WR CMD

Soft PPR <50ns 1 WR CMD

Hard PPR vs Soft PPR

※ Condition : 1.415V(DDR3L) 1.26V(DDR4) / Temp : 87℃ / IO : x8 / 3Sigma

2ynm 8Gb DDR4 shows IDD improvement from previous products

- DDR4 8Gb shows big improvement for Active and Data Switching current

0

20

40

60

80

100

120

140

160

IDD2P IDD2N IDD3P IDD3N IDD6 IDD5B IDD0 IDD1 IDD7 IDD4R IDD4W

DDR4 2ynm 8Gb DDR4 2xnm 4Gb DDR3L 2xnm 4Gb

AVG IDD Ratio Standby Refresh Active Data Switching

D3L 4G 2x D4 8G 2y ~146% ~85% ~88% ~84%

D4 4G 2x D4 8G 2y ~154% ~133% ~96% ~97%

Unit : mA

IDD Comparison (DDR4 8Gb 2ynm vs DDR4 4Gb 2xnm & DDR3L 4Gb 2xnm)

8Gb DDR4 shows 56% power saving compared to 4Gb DDR3.

DDR4 16GB DIMM Power Savings (2DPC)

2ynm 8Gb DDR4

43% 0.7W

1.9W

0.9W

6.1W

2xnm 4Gb DDR3

56% Reduction

RCD

DRAM

22%

※ Condition : 1.575V(DDR3) 1.26V(DDR4) / Temp : 87℃ / IO : x8 / IDD : average ※ Power consumed at each DIMM

Base Device

Module Density

Package type DIMM type

4Gb

4GB, 8GB, 16GB SDP Registered DIMM

32GB RDL DDP Load Reduced DIMM

8Gb

16GB, 32GB SDP Registered DIMM

64GB RDL DDP Load Reduced DIMM

128GB TSV 4Hi Load Reduced DIMM

Wide density coverage of DDR4 module solution for server

Module density transition is accelerating even more with DDR4

64GB and higher module shipment is growing substantially with 8Gb DDR4 adoption

Source : SK hynix marketing

0%

20%

40%

60%

80%

100%

2014 2015 2016 2017 2018

8GB 4GB

16GB

32GB

64GB

128GB 64GB DDR4 LRDIMM

Base Chip : 2ynm 8Gb DDR4

Speed : DDR4-2133Mbps

JEDEC Standard PCB(4Rx4)

Server Module Shipment Forecast

DRAM

DRAM

DRAM

DRAM

World’s 1st TSV/128GB Developer Basic Feature

SK hynix is leading 3DS TSV technology

128GB LRDIMM based on TSV 4 Hi-stack

2013.12.26

“ SK hynix 128GB are based on Through Silicon Via(TSV) technology”

*Apr.2014

Type : 128GB LRDIMM

Base Chip : 2ynm 8Gb DDR4

Speed : DDR4-2133Mbps

Used JEDEC standard PCB(8Rx4)

SK hynix has full lineup of validated DDR4 products

Validated DDR4 products by Intel Intel PMO validation list

IA

Processor

(Platform)

DIMM Validated

module types

Haswell-EP

(Grantley)

RDIMM 10 types

(4/8/16/32GB)

LRDIMM 4 types

(32/64GB)

Haswell

(HEDT)

ECC

UDIMM 2 types

(4/8GB)

*Sep.2014

System Cost Reduction

Expansion of Usage Model

Cost reduction by replacing UPS

Server UPS (Uninterruptible Power Supply)

+

NVDIMM is a solution for TCO reduction and data persistency of data centers

• NV write-Cache

• Meta-Data Storage

• Storage Tiering

• Application data logging

• Message Queuing

• In-memory Database

*16GB DDR4 NVDIMM

TSV is becoming a mature technology

through HBM1 customer qualification and HBM2 transition

Worldwide First HBM1 Provider HBM(High Band width Memory) Product

“Customer Qualification Sample is Available Now”

“Volume production begins Q1’15”

“ SK hynix develops high speed TSV Memory chip” “ SK hynix start production of HBM DRAM Chip modules using 3D TSV.. “

2013.12.26

[ 1GB HBM up to 128GB/s(@1.2V, x1024) ]

High Bandwidth and Low Power is necessary for high performance system

High-End Graphics

100G/400G/1TbE

Network

Exa-scale HPC

Base Die

Interposer

SK hynix 1st HBM

2xnm 2Gb

128GBps High Bandwidth

4 Hi Stack (1GB)

SK hynix 2nd HBM

2znm 8Gb

256GBps High Bandwidth

4/8 Hi Stack (4GB/8GB)

x 1024 IO

1.2V VDD

KGSD w/μBump

Near Memory

• Wide Bus (HBM) + 2.5D/3D Package

• High Performance Working Memory

• Small Form Factor (Thickness / Footprint)

• CPU / GPU Shared LL Cache

CPU

Memory (DRAM)

Storage (SSD/HDD)

CPU

Scale out / Far Memory (DRAM/NVM)

Storage Cache (NVM)

Storage (SSD/HDD)

Near Memory (HBM)

Client PC / Mobile

HBM will be the best solution for next computing system architectures

HBM SoC

DDRx

or

LPDDRx

Near Memory

Extended Memory (Optional)

Server & HPC

HBM SoC

DIMM

Near Memory

Extended Memory

DIMM

Far Memory, or

Extended Memory (Based on DIMM)

MC

NVM NVM NVM

NVM NVM NVM

Next generation

Candidate

Product Current Product

2014 2015

4Q 1Q 2Q 3Q 4Q

DDR4

8Gb N/A

4Gb 2xnm

NV DIMM

4/8Gb N/A

HBM 8Gb (4hi)

2Gb 2xnm 128GB/s

2ynm

2ynm

2ynm, 8/16GB