Sentaurus Device - jmbussat/Physics290E/Fall-2006/... · The license agreement with Synopsys...
Transcript of Sentaurus Device - jmbussat/Physics290E/Fall-2006/... · The license agreement with Synopsys...
-
Sentaurus DeviceVersion Y-2006.06, June 2006
-
ii
Copyright Notice and Proprietary InformationCopyright 2006 Synopsys, Inc. All rights reserved. This software and documentation contain confidential and proprietary information that is the property of Synopsys, Inc. The software and documentation are furnished under a license agreement and may be used or copied only in accordance with the terms of the license agreement. No part of the software and documentation may be reproduced, transmitted, or translated, in any form or by any means, electronic, mechanical, manual, optical, or otherwise, without prior written permission of Synopsys, Inc., or as expressly provided by the license agreement.
Right to Copy DocumentationThe license agreement with Synopsys permits licensee to make copies of the documentation for its internal use only. Each copy shall include all copyrights, trademarks, service marks, and proprietary rights notices, if any. Licensee must assign sequential numbers to all copies. These copies shall contain the following legend on the cover page:
This document is duplicated with the permission of Synopsys, Inc., for the exclusive use of __________________________________________ and its employees. This is copy number __________.
Destination Control StatementAll technical data contained in this publication is subject to the export control laws of the United States of America. Disclosure to nationals of other countries contrary to United States law is prohibited. It is the readers responsibility to determine the applicable regulations and to comply with them.
DisclaimerSYNOPSYS, INC., AND ITS LICENSORS MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.
Registered Trademarks ()Synopsys, AMPS, Arcadia, C Level Design, C2HDL, C2V, C2VHDL, Cadabra, Calaveras Algorithm, CATS, CRITIC, CSim, Design Compiler, DesignPower, DesignWare, EPIC, Formality, HSIM, HSPICE, Hypermodel, iN-Phase, in-Sync, Leda, MAST, Meta, Meta-Software, ModelTools, NanoSim, OpenVera, PathMill, Photolynx, Physical Compiler, PowerMill, PrimeTime, RailMill, RapidScript, Saber, SiVL, SNUG, SolvNet, Superlog, System Compiler, TetraMAX, TimeMill, TMA, VCS, Vera, and Virtual Stepper are registered trademarks of Synopsys, Inc.
Trademarks ()Active Parasitics, AFGen, Apollo, Apollo II, Apollo-DPII, Apollo-GA, ApolloGAII, Astro, Astro-Rail, Astro-Xtalk, Aurora, AvanTestchip, AvanWaves, BCView, Behavioral Compiler, BOA, BRT, Cedar, ChipPlanner, Circuit Analysis, Columbia, Columbia-CE, Comet 3D, Cosmos, CosmosEnterprise, CosmosLE, CosmosScope, CosmosSE, Cyclelink, Davinci, DC Expert, DC Professional, DC Ultra, DC Ultra Plus, Design Advisor, Design Analyzer, Design Vision, DesignerHDL, DesignTime, DFM-Workbench, Direct RTL, Direct Silicon Access, Discovery, DW8051, DWPCI, Dynamic-Macromodeling, Dynamic Model Switcher, ECL Compiler, ECO Compiler, EDAnavigator, Encore, Encore PQ, Evaccess, ExpressModel, Floorplan Manager, Formal Model Checker, FoundryModel, FPGA Compiler II, FPGA Express, Frame Compiler, Galaxy, Gatran, HANEX, HDL Advisor, HDL Compiler, Hercules, Hercules-Explorer, Hercules-II, Hierarchical Optimization Technology, High Performance Option, HotPlace, HSIMplus, HSPICE-Link, iN-Tandem, Integrator, Interactive Waveform Viewer, i-Virtual Stepper, Jupiter, Jupiter-DP, JupiterXT, JupiterXT-ASIC, JVXtreme, Liberty, Libra-Passport, Library Compiler, Libra-Visa, Magellan, Mars, Mars-Rail, Mars-Xtalk, Medici, Metacapture, Metacircuit, Metamanager, Metamixsim, Milkyway, ModelSource, Module Compiler, MS-3200, MS-3400, Nova Product Family, Nova-ExploreRTL, Nova-Trans, Nova-VeriLint, Nova-VHDLlint, Optimum Silicon, Orion_ec, Parasitic View, Passport, Planet, Planet-PL, Planet-RTL, Polaris, Polaris-CBS, Polaris-MT, Power Compiler, PowerCODE, PowerGate, ProFPGA, ProGen, Prospector, Protocol Compiler, PSMGen, Raphael, Raphael-NES, RoadRunner, RTL Analyzer, Saturn, ScanBand, Schematic Compiler, Scirocco, Scirocco-i, Shadow Debugger, Silicon Blueprint, Silicon Early Access, SinglePass-SoC, Smart Extraction, SmartLicense, SmartModel Library, Softwire, Source-Level Design, Star, Star-DC, Star-MS, Star-MTB, Star-Power, Star-Rail, Star-RC, Star-RCXT, Star-Sim, Star-SimXT, Star-Time, Star-XP, SWIFT, Taurus, TimeSlice, TimeTracker, Timing Annotator, TopoPlace, TopoRoute, Trace-On-Demand, True-Hspice, TSUPREM-4, TymeWare, VCS Express, VCSi, Venus, Verification Portal, VFormal, VHDL Compiler, VHDL System Simulator, VirSim, and VMC are trademarks of Synopsys, Inc.
Service Marks (SM)MAP-in, SVP Caf, and TAP-in are service marks of Synopsys, Inc.
SystemC is a trademark of the Open SystemC Initiative and is used under license.ARM and AMBA are registered trademarks of ARM Limited.All other product or company names may be trademarks of their respective owners.
Sentaurus Device, Y-2006.06
-
SENTAURUS DEVICE CONTENTS
Sentaurus DeviceAbout this manual ............................................................................................................................xxiii
Audience ..........................................................................................................................................................xxiiiRelated publications.........................................................................................................................................xxiiiTypographic conventions ................................................................................................................................ xxivCustomer support............................................................................................................................................ xxivAcknowledgments ............................................................................................................................................ xxv
Part I Getting Started................................................................................................ 1Chapter 1 Overview...............................................................................................................................3
About Sentaurus Device ......................................................................................................................................3Creating and meshing device structures ........................................................................................................5Tool flow .........................................................................................................................................................6
Starting Sentaurus Device ...................................................................................................................................6From command line........................................................................................................................................6From Sentaurus Workbench ..........................................................................................................................7
Simulation examples ............................................................................................................................................8Example: Simple MOSFET IdVg simulation.......................................................................................................8
Input command file .........................................................................................................................................8File section .....................................................................................................................................................9Electrode section..........................................................................................................................................10Physics section.............................................................................................................................................11Plot section...................................................................................................................................................12Math section .................................................................................................................................................12Solve section ................................................................................................................................................13Simulated IdVg characteristic.....................................................................................................................14Analysis of 2D output data ...........................................................................................................................15
Example: Advanced hydrodynamic IdVd simulation ........................................................................................17Input command file .......................................................................................................................................17File section ...................................................................................................................................................19
Main options..........................................................................................................................................20Parameter file ...............................................................................................................................................20
Listing of mos.par..................................................................................................................................20Report in protocol file n3_des.log..........................................................................................................20
Electrode section..........................................................................................................................................21Main options..........................................................................................................................................21
Physics section.............................................................................................................................................21Main options..........................................................................................................................................22
Interface physics ..........................................................................................................................................23Main options..........................................................................................................................................23
Plot section...................................................................................................................................................23CurrentPlot section.......................................................................................................................................23
Main options..........................................................................................................................................24Math section .................................................................................................................................................24
Example ................................................................................................................................................24Solve section ................................................................................................................................................25Two-dimensional output data .......................................................................................................................28
Example: Mixed-mode CMOS inverter simulation .............................................................................................29Input command file .......................................................................................................................................29Device section ..............................................................................................................................................31System section .............................................................................................................................................32File section ...................................................................................................................................................33
iii
-
SENTAURUS DEVICECONTENTS
Plot section...................................................................................................................................................33Math section .................................................................................................................................................33Solve section ................................................................................................................................................34Results of inverter transient simulation ........................................................................................................35
Example: Small-signal AC extraction .................................................................................................................35Input command file .......................................................................................................................................36Device section ..............................................................................................................................................37File section ...................................................................................................................................................38System section .............................................................................................................................................38Solve section ................................................................................................................................................39Results of AC simulation ..............................................................................................................................40
Chapter 2 Basic Sentaurus Device ....................................................................................................41Overview ............................................................................................................................................................41
Specifying the device ...................................................................................................................................41Defining the output .......................................................................................................................................41Specifying the simulation..............................................................................................................................42Inserting files ................................................................................................................................................42
File section .........................................................................................................................................................43Electrode section................................................................................................................................................43
Workfunction and material specifications for contacts .................................................................................44Thermode section ..............................................................................................................................................46Physics section ..................................................................................................................................................47
Physics section example ..............................................................................................................................47Region-specific and material-specific physics..............................................................................................48Physics at interfaces ....................................................................................................................................49
Interface model syntax ..........................................................................................................................49Interface model parameters ..................................................................................................................49
Physics at electrodes ...................................................................................................................................50Plot section.........................................................................................................................................................50
Interface plots...............................................................................................................................................51CurrentPlot section.............................................................................................................................................52
Example: Node numbers..............................................................................................................................53Example: Mixed mode..................................................................................................................................54Example: Advanced options.........................................................................................................................54Example: Physical parameter values ...........................................................................................................55
TrappedCarDistrPlot section ..............................................................................................................................55NonLocalPlot section .........................................................................................................................................55Solve section......................................................................................................................................................55
Coupled command .......................................................................................................................................56Plugin command...........................................................................................................................................57Quasistationary command............................................................................................................................58
Ramping boundary conditions...............................................................................................................59Ramping physical parameter values .....................................................................................................60Saving and plotting data during Quasistationary solve sequence.........................................................62
Transient command......................................................................................................................................62Large-signal cyclic analysis..........................................................................................................................63
Description of method ...........................................................................................................................64Using cyclic analysis .............................................................................................................................66
Plot, Save, and Load commands .................................................................................................................66Example: Solve section of input file with Plot, Save, and Load operations...........................................67Example: Solve section of input file with multiple Save and Load operations.......................................68
iv
-
SENTAURUS DEVICE CONTENTS
System command.........................................................................................................................................69NewCurrentPrefix statement ........................................................................................................................69CurrentPlot section.......................................................................................................................................70
Example: CurrentPlot statements .........................................................................................................71Set command ...............................................................................................................................................72
Math section.......................................................................................................................................................72Device-specific Math keywords ....................................................................................................................72
Physics-related Math keywords ............................................................................................................73Derivatives ............................................................................................................................................73Discretization methods..........................................................................................................................74
Math parameters for nonlinear iterations convergence control ....................................................................75Math parameters for transient analysis ........................................................................................................76Solver-oriented Math keywords....................................................................................................................77Break criteria ................................................................................................................................................78Parallelization ...............................................................................................................................................80Nonlocal line meshes ...................................................................................................................................81
Specifying nonlocal line meshes ...........................................................................................................81Visualizing nonlocal line meshes ..........................................................................................................81Visualizing data defined on nonlocal line meshes.................................................................................82Constructing nonlocal line mesh ...........................................................................................................83Special handling of 1D Schrdinger equation .......................................................................................84Special handling of nonlocal tunneling model .......................................................................................85Performance suggestions .....................................................................................................................85
Monitoring convergence behavior ................................................................................................................86CNormPrint ...........................................................................................................................................86NewtonPlot............................................................................................................................................86
Incomplete Newton algorithm.......................................................................................................................87Specifying model parameters.............................................................................................................................88
Specifying region and material parameters..................................................................................................88Generating a copy of parameter file .............................................................................................................88Changing parameter values in parameter file ..............................................................................................89Library of materials.......................................................................................................................................89Parameters of compound materials .............................................................................................................91Undefined physical models ..........................................................................................................................92Default parameters.......................................................................................................................................93
Hierarchy of models and parameters .................................................................................................................93Model hierarchy............................................................................................................................................94Parameter hierarchy.....................................................................................................................................94
Material and doping specification.......................................................................................................................95User-defined materials .................................................................................................................................96User-defined species....................................................................................................................................97
Tcl command file ................................................................................................................................................99Overview ......................................................................................................................................................99sdevice command ......................................................................................................................................101sdevice_init command................................................................................................................................101sdevice_solve command ............................................................................................................................101sdevice_finish command ............................................................................................................................102Flowchart....................................................................................................................................................102sdevice_parameters command ..................................................................................................................102Extraction ...................................................................................................................................................103Output redirection.......................................................................................................................................104Known restrictions ......................................................................................................................................104
Saving snapshots.............................................................................................................................................104
v
-
SENTAURUS DEVICECONTENTS
Chapter 3 Mixed-mode Sentaurus Device.......................................................................................107Overview ..........................................................................................................................................................107
Compact models ........................................................................................................................................107Hierarchical description of compact models...............................................................................................108Example: Compact models ........................................................................................................................110
SPICE circuit files.............................................................................................................................................111Device section..................................................................................................................................................112System section.................................................................................................................................................113
Physical devices.........................................................................................................................................114Circuit devices ............................................................................................................................................115Electrical and thermal netlist ......................................................................................................................115Set, Unset, Initialize, and Hint ....................................................................................................................117System Plot ................................................................................................................................................118AC System Plot ..........................................................................................................................................119
File section .......................................................................................................................................................120SPICE circuit models .......................................................................................................................................121User-defined circuit models..............................................................................................................................121Solve section....................................................................................................................................................122
Coupled command .....................................................................................................................................122Circuit and contact equation-variable keywords..................................................................................122Selecting individual devices ................................................................................................................123
Quasistationary command..........................................................................................................................124ACCoupled: Small-signal AC analysis .......................................................................................................125
Example: AC analysis of simple device ..............................................................................................126Optical AC analysis ....................................................................................................................................127Harmonic balance ......................................................................................................................................128
Performing harmonic balance analysis ...............................................................................................128Harmonic balance analysis output ......................................................................................................129Application notes.................................................................................................................................130
Continuation: Alternative ramping method .................................................................................................130Example: Solve entry for continuation.................................................................................................131
Set and Unset section ................................................................................................................................132Accessing SPICE vector parameters .........................................................................................................132
Math section.....................................................................................................................................................133Using mixed-mode simulation ..........................................................................................................................133
From single-device file to multidevice file...................................................................................................133File-naming convention: Mixed-mode extension ........................................................................................135
Part II Physics in Sentaurus Device..................................................................... 137Chapter 4 Introduction to physics in Sentaurus Device................................................................139
Transport equations .........................................................................................................................................139Poisson equation and continuity equations ................................................................................................140Drift-diffusion model ...................................................................................................................................140Thermodynamic transport model................................................................................................................141
Thermodynamic model........................................................................................................................141Using the thermodynamic model.........................................................................................................142
Uniform self-heating ...................................................................................................................................143Using uniform self-heating ..................................................................................................................144
Hydrodynamic transport model ..................................................................................................................144Using the hydrodynamic model...........................................................................................................145Hydrodynamic model ..........................................................................................................................145
vi
-
SENTAURUS DEVICE CONTENTS
Hydrodynamic model parameters .......................................................................................................149Conductivity of metals ................................................................................................................................149Conductive insulators .................................................................................................................................152
Quasi-Fermi potential.......................................................................................................................................155Fermi statistics .................................................................................................................................................156
Using Fermi statistics .................................................................................................................................157Boundary conditions.........................................................................................................................................157
Electrical boundary conditions....................................................................................................................157Ohmic contacts ...................................................................................................................................157Gate contacts ......................................................................................................................................158Schottky contacts ................................................................................................................................159Barrier lowering at Schottky contacts..................................................................................................160Resistive contacts ...............................................................................................................................160Floating metal gates............................................................................................................................162Floating semiconductor gates .............................................................................................................163Boundaries without contacts ...............................................................................................................164
Thermal boundary conditions for thermodynamic model ...........................................................................164Thermal boundary conditions for hydrodynamic model..............................................................................165Total thermal resistance .............................................................................................................................165
Estimating thermal resistance .............................................................................................................166Periodic boundary conditions .....................................................................................................................166
Starting solution or initial guess......................................................................................................................168Electrostatic potential and quasi-Fermi potentials: Wells ...........................................................................168Regionwise specification of initial quasi-Fermi potentials ..........................................................................169Thermodynamic and hydrodynamic simulations ........................................................................................169Save file overrides the initial guess ............................................................................................................169
Chapter 5 Semiconductor band structure ......................................................................................171Intrinsic density ................................................................................................................................................171Band gap and electron affinity..........................................................................................................................171
Selecting the band gap model....................................................................................................................172Bandgap and electron-affinity models ........................................................................................................172
Bandgap narrowing for BennettWilson model...................................................................................173Bandgap narrowing for Slotboom model.............................................................................................173Bandgap narrowing for del Alamo model ............................................................................................174Table specification of bandgap narrowing...........................................................................................174Bandgap narrowing with Fermi statistics.............................................................................................175
Bandgap parameters..................................................................................................................................175Effective masses and effective density-of-states .............................................................................................176
Electron effective mass and DOS ..............................................................................................................177Formula 1 ............................................................................................................................................177Formula 2 ............................................................................................................................................177
Electron effective mass and conduction band DOS parameters................................................................178Hole effective mass and DOS ....................................................................................................................178
Formula 1 ............................................................................................................................................178Formula 2 ............................................................................................................................................179
Hole effective mass and valence band DOS parameters...........................................................................179
Chapter 6 Incomplete ionization ......................................................................................................181Using incomplete ionization .............................................................................................................................181Incomplete ionization model.............................................................................................................................182Physical model parameters..............................................................................................................................183
vii
-
SENTAURUS DEVICECONTENTS
Chapter 7 Quantization models .......................................................................................................185Overview ..........................................................................................................................................................185van Dort quantization model ............................................................................................................................186
van Dort model ...........................................................................................................................................186Using the van Dort model...........................................................................................................................186
1D Schrdinger solver......................................................................................................................................187Nonlocal mesh for 1D Schrdinger ............................................................................................................187Using 1D Schrdinger ................................................................................................................................1881D Schrdinger parameters .......................................................................................................................189
Explicit ladder specification .................................................................................................................189Automatic extraction of ladder parameters .........................................................................................189
Visualizing Schrdinger solutions...............................................................................................................1911D Schrdinger model................................................................................................................................1911D Schrdinger application notes ..............................................................................................................192
Density gradient quantization model ................................................................................................................192Density gradient model...............................................................................................................................192Using the density gradient model ...............................................................................................................194Density gradient application notes .............................................................................................................195
Modified local-density approximation ...............................................................................................................196MLDA model...............................................................................................................................................196Using MLDA ...............................................................................................................................................196MLDA application notes .............................................................................................................................197
Chapter 8 Mobility models................................................................................................................199How mobility models combine..........................................................................................................................199Mobility due to phonon scattering ....................................................................................................................200Doping-dependent mobility degradation ..........................................................................................................200
Using doping-dependent mobility ...............................................................................................................200Masetti model .............................................................................................................................................201Arora model................................................................................................................................................202University of Bologna bulk mobility model..................................................................................................202
Mobility degradation at interfaces ....................................................................................................................204Using mobility degradation at interfaces ....................................................................................................204Enhanced Lombardi model ........................................................................................................................205University of Bologna surface mobility model.............................................................................................207Computing transverse field.........................................................................................................................209
Normal to interface..............................................................................................................................209Normal to current flow .........................................................................................................................210
Carriercarrier scattering .................................................................................................................................210Using carriercarrier scattering ..................................................................................................................211ConwellWeisskopf model .........................................................................................................................211BrooksHerring model................................................................................................................................211Physical model parameters ........................................................................................................................212
Philips unified mobility model ...........................................................................................................................212Using Philips model....................................................................................................................................212Using an alternative Philips model .............................................................................................................213Philips model description............................................................................................................................213Screening parameter..................................................................................................................................215Philips model parameters...........................................................................................................................215
High-field saturation .........................................................................................................................................217Using high-field saturation..........................................................................................................................217Extended Canali model ..............................................................................................................................217Transferred electron model ........................................................................................................................219
viii
-
SENTAURUS DEVICE CONTENTS
Basic model................................................................................................................................................219MeinerzhagenEngl model.........................................................................................................................220Lucent model..............................................................................................................................................220Velocity saturation models .........................................................................................................................221
Selecting velocity saturation models ...................................................................................................221Driving force models...................................................................................................................................221
Monte Carlocomputed mobility for strained silicon.........................................................................................222Monte Carlocomputed mobility for strained SiGe in npn-SiGe HBTs.............................................................223Incomplete ionizationdependent mobility models...........................................................................................223
Chapter 9 Generationrecombination .............................................................................................225ShockleyReadHall (SRH) recombination .....................................................................................................225
Using SRH recombination ..........................................................................................................................226SRH doping dependence ...........................................................................................................................226Lifetime profiles from files...........................................................................................................................227SRH temperature dependence...................................................................................................................227SRH doping- and temperature-dependent parameters ..............................................................................228SRH field enhancement .............................................................................................................................228
Using field enhancement.....................................................................................................................229Schenk trap-assisted tunneling (TAT) model ......................................................................................229Schenk TAT density correction ...........................................................................................................231Hurkx TAT model ................................................................................................................................231Field-enhancement parameters ..........................................................................................................232
Trap-assisted Auger recombination ...........................................................................................................232Surface SRH recombination.............................................................................................................................233Coupled defect level (CDL) recombination ......................................................................................................234
Using CDL ..................................................................................................................................................234CDL model .................................................................................................................................................235
Radiative recombination...................................................................................................................................236Using radiative recombination ....................................................................................................................236Radiative model..........................................................................................................................................236
Auger recombination ........................................................................................................................................237Avalanche generation ......................................................................................................................................238
Using avalanche generation.......................................................................................................................238van Overstraeten de Man model .............................................................................................................239OkutoCrowell model .................................................................................................................................240Lackner model............................................................................................................................................240University of Bologna impact ionization model...........................................................................................241New University of Bologna impact ionization model...................................................................................242Driving force ...............................................................................................................................................244Avalanche generation with hydrodynamic transport...................................................................................245
Approximate breakdown analysis: Poisson equation approach.......................................................................246Using breakdown analysis..........................................................................................................................247
Band-to-band tunneling models .......................................................................................................................248Schenk model.............................................................................................................................................248
Using Schenk band-to-band tunneling ................................................................................................249Simple band-to-band model .......................................................................................................................249
Using simple band-to-band model ......................................................................................................249Hurkx band-to-band model.........................................................................................................................250
Using Hurkx band-to-band model .......................................................................................................250Tunneling near interfaces and equilibrium regions.....................................................................................251
ix
-
SENTAURUS DEVICECONTENTS
Chapter 10 Traps and fixed charges ...............................................................................................253Basic syntax for traps.......................................................................................................................................253Trap types ........................................................................................................................................................254Energetic and spatial distribution of traps ........................................................................................................254Trap models and parameters ...........................................................................................................................255
Trap occupation dynamics .........................................................................................................................255Local trap capture and emission ................................................................................................................256
J-model cross sections........................................................................................................................257Hurkx model for cross sections ...........................................................................................................258PooleFrenkel model for cross sections .............................................................................................258
Tunneling and traps....................................................................................................................................258Trap numeric parameters.................................................................................................................................259Visualizing traps ...............................................................................................................................................260Explicit trap occupation ....................................................................................................................................261Trap examples .................................................................................................................................................262Insulator fixed charges .....................................................................................................................................262
Chapter 11 Degradation model ........................................................................................................265Overview ..........................................................................................................................................................265Trap formation kinetics.....................................................................................................................................265
Power law and kinetic equation..................................................................................................................265Si-H densitydependent activation energy.................................................................................................266Diffusion of hydrogen in oxide ....................................................................................................................266
Syntax and parameterized equations...............................................................................................................267Device lifetime and simulation..........................................................................................................................270
Chapter 12 Optical generation .........................................................................................................273Generating photon beams................................................................................................................................273Absorption models ...........................................................................................................................................276
Default absorption model from parameter file ............................................................................................277Table-based optical properties of materials in parameter file.....................................................................278Absorption coefficient model ......................................................................................................................279
Optical generation by raytracing ......................................................................................................................280Physical model ...........................................................................................................................................281Refractive index model...............................................................................................................................282Absorption model .......................................................................................................................................283Using absorption model..............................................................................................................................283Window of ray.............................................................................................................................................284Two-dimensional device and window description ......................................................................................286Three-dimensional device and window description....................................................................................287Spatial distribution of intensity....................................................................................................................288Polarization.................................................................................................................................................292Boundary condition for raytracing...............................................................................................................293
Constant reflectivity boundary condition .............................................................................................293Thin-layer-stack boundary condition ...................................................................................................294
Additional options for raytracing .................................................................................................................296Dual-grid setup for raytracing .....................................................................................................................296
Optical generation by transfer matrix approach ...............................................................................................298Physical model ...........................................................................................................................................298Using optical generation.............................................................................................................................301
Optical generation from FDTD simulation (EMW)............................................................................................303Files of EMW generation ............................................................................................................................303
Creating the tensor grid and EMW input command file.......................................................................304
x
-
SENTAURUS DEVICE CONTENTS
User-defined input or tensor grid.........................................................................................................304Log of EMW run ..................................................................................................................................305
Syntax of EMW generation: Input file of EMW ...........................................................................................305Boundary.............................................................................................................................................306Excitation.............................................................................................................................................307Excitation example 1 ...........................................................................................................................309Material/AutoMatGen ..........................................................................................................................309
EMW generation: Tensor grid, syntax, and algorithm ................................................................................313GridBoundX, GridBoundY, and GridBoundZ.......................................................................................313SmoothingFactor.................................................................................................................................315
Multithreading for EMW generation: Syntax...............................................................................................315Optical generation by beam propagation method ............................................................................................316
Physical model ...........................................................................................................................................316Boundary conditions............................................................................................................................317
Using beam propagation method ...............................................................................................................318General ...............................................................................................................................................318Excitation.............................................................................................................................................318Boundary.............................................................................................................................................321Optics stand-alone option ...................................................................................................................321Ramping input parameters..................................................................................................................322
Loading optical generation from file .................................................................................................................323Wavelength ramping for computing optical generation ....................................................................................323Optical AC analysis ..........................................................................................................................................325
Chapter 13 Radiation models...........................................................................................................327Generation by gamma radiation.......................................................................................................................327
Using gamma radiation model....................................................................................................................327Yield function..............................................................................................................................................327
Alpha particles..................................................................................................................................................328Using alpha particle model .........................................................................................................................328Alpha particle model...................................................................................................................................329
Heavy ions .......................................................................................................................................................330Using heavy ion model ...............................................................................................................................330Heavy ion model.........................................................................................................................................330Examples: Heavy ions................................................................................................................................332
Example 1 ...........................................................................................................................................332Example 2 ...........................................................................................................................................333
Improved alpha particle/heavy ion generation rate integration ........................................................................333
Chapter 14 Noise and fluctuation analysis .....................................................................................335Performing noise and fluctuation analysis........................................................................................................335Noise sources ..................................................................................................................................................337
Diffusion noise............................................................................................................................................337Equivalent monopolar generationrecombination noise ............................................................................337Bulk flicker noise ........................................................................................................................................338Random dopant fluctuations.......................................................................................................................338Noise from SPICE circuit elements ............................................................................................................339
Impedance field method...................................................................................................................................339Noise output data .............................................................................................................................................340
xi
-
SENTAURUS DEVICECONTENTS
Chapter 15 Tunneling........................................................................................................................343Tunneling model overview ...............................................................................................................................343FowlerNordheim tunneling .............................................................................................................................344
Using FowlerNordheim.............................................................................................................................344FowlerNordheim model ............................................................................................................................345FowlerNordheim parameters....................................................................................................................345
Direct tunneling ................................................................................................................................................346Using direct tunneling.................................................................................................................................346Direct tunneling model................................................................................................................................347
Image force effect ...............................................................................................................................347Direct tunneling parameters .......................................................................................................................349
Nonlocal tunneling at interfaces and contacts..................................................................................................349Defining nonlocal mesh ..............................................................................................................................350Specifying nonlocal tunneling model ..........................................................................................................350Nonlocal tunneling parameters...................................................................................................................352Visualizing nonlocal tunneling ....................................................................................................................353Physics of nonlocal tunneling model ..........................................................................................................353
WKB tunneling probability ...................................................................................................................353Schrdinger equationbased tunneling probability .............................................................................355Density gradient quantization correction .............................................................................................356Nonlocal tunneling current ..................................................................................................................356Band-to-band contributions to nonlocal tunneling current...................................................................357Carrier heating ....................................................................................................................................357Implementation consideration .............................................................................................................359
Chapter 16 Hot-carrier injection models .........................................................................................361Overview ..........................................................................................................................................................361Classical lucky electron injection......................................................................................................................363Fiegna hot-carrier injection...............................................................................................................................364Carrier injection with explicitly evaluated boundary conditions for continuity equations ..................................365
Chapter 17 Heterostructure device simulation...............................................................................367Physics models and differential equations .......................................................................................................367Mole fraction materials .....................................................................................................................................367Mole fraction specification................................................................................................................................369Composition-dependent models ......................................................................................................................371Ternary semiconductor composition ................................................................................................................372
Example 1: Specifying electron effective mass ..........................................................................................373Example 2: Specifying dielectric permittivity ..............................................................................................374Example 3: Specifying band gap................................................................................................................374
Quaternary semiconductor composition...........................................................................................................375Default model parameters for compound semiconductors...............................................................................376Abrupt and graded heterojunctions ..................................................................................................................377Thermionic emission current ............................................................................................................................378
Using thermionic emission current .............................................................................................................378Thermionic emission model........................................................................................................................379
Chapter 18 Energy-dependent parameters.....................................................................................381Overview ..........................................................................................................................................................381Energy-dependent energy relaxation time .......................................................................................................381
Spline interpolation.....................................................................................................................................383Energy-dependent mobility ..............................................................................................................................384
Spline interpolation.....................................................................................................................................385
xii
-
SENTAURUS DEVICE CONTENTS
Energy-dependent Peltier coefficient ...............................................................................................................386Spline interpolation.....................................................................................................................................387
Chapter 19 Anisotropic properties ..................................................................................................389Anisotropic mobility ..........................................................................................................................................390
Crystal reference system............................................................................................................................390Anisotropy factor ........................................................................................................................................390Current densities ........................................................................................................................................390Driving forces .............................................................................................................................................392Total anisotropic mobility............................................................................................................................393Total direction-dependent anisotropic mobility ...........................................................................................393Self-consistent anisotropic mobility ............................................................................................................394Plot section.................................................................................................................................................395
Anisotropic avalanche generation ....................................................................................................................396Anisotropic electrical permittivity ......................................................................................................................397Anisotropic thermal conductivity.......................................................................................................................398
Chapter 20 Ferroelectric materials ..................................................................................................401Using ferroelectrics ..........................................................................................................................................401Ferroelectrics model.........................................................................................................................................402
Chapter 21 Modeling mechanical stress effect ..............................................................................405Overview ..........................................................................................................................................................405Deformation of band structure..........................................................................................................................406
Using deformation potential model.............................................................................................................407Piezoresistive mobility change .........................................................................................................................408
Using piezoresistive model.........................................................................................................................410Strain-induced mobility model ..........................................................................................................................410
Using strain-induced mobility model...........................................................................................................412Intel stress-induced hole mobility model ..........................................................................................................413
Stress dependencies..................................................................................................................................414Generalization of model .............................................................................................................................414Using Intel mobility model ..........................................................................................................................416
Using stress-dependent models.......................................................................................................................417Dependence saturation velocity on stress .......................................................................................................418Stress mobility model for minority carriers .......................................................................................................419Piezoelectric polarization .................................................................................................................................420
Strain model ...............................................................................................................................................421Stress model ..............................................................................................................................................421Poisson equation........................................................................................................................................422Parameter file .............................................................................................................................................422Coordinate systems....................................................................................................................................423
Chapter 22 Galvanic transport model .............................................................................................425Syntax and implementation..............................................................................................................................425Model description .............................................................................................................................................425
Chapter 23 Thermal properties ........................................................................................................427Heat capacity ...................................................................................................................................................427Temperature-dependent lattice heat capacity..................................................................................................427Thermal conductivity ........................................................................................................................................428Temperature-dependent thermal conductivity..................................................................................................428Thermoelectric power (TEP) ............................................................................................................................429
xiii
-
SENTAURUS DEVICECONTENTS
Part III Physics of Lasers and Light-Emitting Diodes ......................................... 431Chapter 24 Introduction to lasers and LEDs ..................................................................................433
Overview ..........................................................................................................................................................433Command file syntax........................................................................................................................................435
Simulating single-grid edge-emitting laser .................................................................................................435Simulating dual-grid edge-emitting laser ..