Senior Project 2008

SENIOR PROJECT 2008

Ultra Wideband AmplifierSarah KiefSaif Anwar

Advisor: Dr. Shastry

Bradley UniversityElectrical Engineering

Outline

UWB overview Project Description Design procedures

Lumped element Design M-derive Design Layout Microstrip Design Coplanar Wave Guide Design Final Layout

Future work

Applications

Block Diagram

Ultra Wideband Overview

UWB definition Spectrum, 3.1 – 10.6 GHz Large bandwidth, low power, short distances Uses Gaussian Pulses.

Frequency Spectrum

UWB History

History First used in 1901 Gugleilmo Marconi transmitted Morse code using spark-

gap radio transmitters 1960s to 1980s restricted to government use 1998 FCC legalized for commercial use

Previous Work

Senior Project 2007 done by Jarred Cook and Nathan Gove. Goal was to create a scaled down UWB transceiver.

Research done by other members of the scientific community.

Previous Work

Reference

Gain (dB)

NF (dB)

BW (GHz)

PD (mW) Topology Technology

[1] 17.5 3.13.1-10.6 33.2 Distributed

0.18 µm CMOS

[2] 10 6.43.1-10.6 5.4 Distributed

0.35 µm SiGe BiCMOS

[3] 9 5.33.1-10.6 22 Distributed

0.18 µm CMOS

[4] 20 6.51.6-12.1 40

Low Power Distributed

0.35 µm SiGe BiCMOS

[5] 7.34.3-6.1 0-22 53 Distributed

0.18 µm CMOS

[6] 10.63.4-5.3 0-14 52 Distributed

0.18 µm CMOS

[7] 6 6 1-27 68.1 Distributed0.18 µm CMOS

Project Description

Functional Description Topology: Distributed Amplifier (DA) Low Noise Amplifier (LNA) implemented with a Gas FETs-

NE4210S01, Pseudomorphic Hetero-Junction FET Specifications

Gain: 16 dB Noise Figure: 2.5 dB

Requirements Frequency Range External Interferences

External Interferences

Standard Frequency Range Reference

IEEE 802.11a 5 GHz [8]

IEEE 802.11i 2.4GHz and 5GHz [8]

IEEE 802.16WiMAX 2GHz – 11 GHz [9]

DC-IV Curves

Bias Selection

DC-IV curves and bias point selection.

0.5 1.0 1.5 2.0 2.5 3.0 3.50.0 4.0

10

20

30

40

50

60

0

70

VDS

I_P

robe

1.i,

mA

Readout

m1

3.9800.061

m2

4.0000.055

m3

2.0100.010

m4

m1VDS=I_Probe1.i=0.032VGS=-0.520000

3.980m2VDS=I_Probe1.i=0.029VGS=-0.560000

3.980m3VDS=I_Probe1.i=0.026VGS=-0.600000

4.000m4VDS=I_Probe1.i=0.010VGS=-0.680000

2.010

Cin and Cout Calculation

Eqn cin=imag(Y(1,1))/(2*pi*freq)

4 5 6 7 8 9 103 11

2E-13

3E-13

4E-13

5E-13

6E-13

1E-13

7E-13

freq, GHz

cin

Eqn cinavg=mean(cin)

cinavg

3.338E-13

Eqn cout=imag(Y(2,2))/(2*pi*freq)

4 5 6 7 8 9 103 11

5.0E-14

1.0E-13

1.5E-13

2.0E-13

2.5E-13

3.0E-13

3.5E-13

0.0

4.0E-13

freq, GHzco

ut

Eqncoutavg=mean(cout)

coutavg

1.686E-13

Lumped Component Schematic

LGLG/2-

LG/2 LG

LDLDLD/2

LD/2

LL9

R=L=.424 nH

CC5C=.0954 pF

LL8

R=L=.238 nHTerm

Term1

Z=50 OhmNum=1

CC6C=2400 pF

LL19

R=L=.395 nH

LL11

R=L=.238 nH

LL3

R=L=.79 nH

LL17

R=L=.79 nH

LL2

R=L=.395 nH

LL14

R=L=2200 nH

CC9C=2400 pF

CC11C=2400 pF

V_DCSRC2Vdc=-.45 V

RR2R=50 Ohm

CC8C=.0954 pF

LL13

R=L=.424 nH

LL25

R=L=56.31 pH

LL24

R=L=56.31 pH

LL23

R=L=56.31 pH

CC3C=2400 pF

LL7

R=L=2200 nH

CC4C=2400 pF

RR3R=50 Ohm

CC2C=.0954 pF

LL6

R=L=.424 nH

LL5

R=L=.238 nH

V_DCSRC1Vdc=1 V

S_ParamSP1

Step=Stop=10.6 GHzStart=3.1 GHz

S-PARAMETERS

TechInclude_NEC_ACTIVELIBRARYNEC_ACTIVELIBRARY_LibFile=Nominal

LL1

R=L=.395 nH

LL18

R=L=.395 nH

LL4

R=L=.79 nH

LL15

R=L=.79 nH

LL20

R=L=56.31 pH

LL21

R=L=56.31 pH

LL22

R=L=56.31 pH

NEC_FETQ2partName=NE4210S01_v116



LL12

R=L=.424 nH

CC7C=.0954 pF

LL10

R=L=.238 nH

TermTerm2

Z=50 OhmNum=2

CC12C=2400 pF

M-Derived Design

Microstrip Line Design

Translated lumped element components into respective lengths and widths in the MSTRIP program Capacitors Zo=30 ohms Inductor Zo=90 ohms

Built layout in ADS and simulated

Microstrip Layout

MSUBMSub1

Rough=0 milTanD=0.0012T=35 umHu=3.9e+034 milCond=5.8E7Mur=1Er=2.94H=20.0 mil

MSub


S_ParamSP1


S-PARAMETERS

MTEE_ADSTee3

W3=.703556 mmW2=25.0 milW1=.703556 mmSubst="MSub1"

MLINL12

L=.9249 mmW=.703556 mmSubst="MSub1"

MSTEPStep5

W2=.703556 mmW1=2.67022 mmSubst="MSub1"

MLINC7

L=.5335 mmW=2.67022 mmSubst="MSub1"

TermTerm1

Z=50 OhmNum=2

CC14C=2400 pF

MLINL17+L11

L=1.3820 mmW=.703556 mmSubst="MSub1"

VIAGNDV14

W=25.0 milRho=1.0T=0.15 milD=15.0 milSubst="MSub1"

VIAGNDV11


MLINL15+L10

L=1.3820 mmW=.703556 mmSubst="MSub1"MTEE_ADS

Tee9

W3=.703556 mmW2=.703556 mmW1=.703556 mmSubst="MSub1"

MLINTL5



MLINTL6


MTEE_ADSTee10


MLINTL4


MLINL20


VIAGNDV3


VIAGNDV13



MLINTL1


MTEE_ADSTee5


MLINL4

L=1.7234 mmW=.703556 mmSubst="MSub1"MTEE_ADS

Tee6


MLINTL2

L=.1228 mmW=.703556 mmSubst="MSub1" VIAGND

V12


VIAGNDV2


MTEE_ADSTee8


MLINL8+L2



MLINTL3


MTEE_ADSTee7


MLINL21


VIAGNDV6


VIAGNDV5


MTEE_ADSTee4


MLINC8


MSTEPStep6


MLINL13


V_DCSRC2Vdc=-.45 V

CC16C=2400 pF

LL19

R=L=2200 nH

RR2R=50 Ohm

CC15C=2400 pF

MLINL3


VIAGNDV10


CC10C=2400 pF

LL18

R=L=2200 nH

V_DCSRC1Vdc=1.0 V

MLINL5+L1


MLINC2


MSTEPStep1


MLINL6


MTEE_ADSTee2

W3=.703556 mmW2=.703556 mmW1=25.0 milSubst="MSub1"

CC11C=2400 pF

RR1R=50 Ohm

VIAGNDV8


MTEE_ADSTee1


MLINC5


MSTEPStep7


MLINL9


TermTerm2

Z=50 OhmNum=1

CC9C=2400 pF

Simulations

Amplifier Gain

4 5 6 7 8 9 103 11

1

2

3

4

5

6

7

8

9

10

11

12

13

0

14

freq, GHz

dB(S

(2,1

))

Readout

m1

m1freq=dB(S(2,1))=13.146Max

7.329GHz

3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.53.0 11.0

-150

-100

-50

0

50

100

150

-200

200

freq, GHz

phas

e(S

(2,1

))

Phase Linearity

Stability Factor

Eqn k = stab_fact(S) m2freq=k=1.477Min

10.60GHz

4 5 6 7 8 9 103 11

2

3

4

5

1

6

freq, GHz

k

Readout

m2

m2freq=k=1.477Min

10.60GHzEqn k1=stab_meas(S)

m3freq=k1=0.868Min

10.60GHz

4 5 6 7 8 9 103 11

0.88

0.90

0.92

0.94

0.86

0.96

freq, GHz

k1

Readout

m3

m3freq=k1=0.868Min

10.60GHz

Coplanar Wave Guide Design

Test Transistors Chose RT/Duriod 6002 board

Thickness : .508 mm Dielectric Constant : 2.94 1 oz copper plating High mechanical strength

Designed dimensions Line calc in ADS Width of center conductor = 1.24 mm Air Gap = .63 mm Length of center conductor = 10 mm

Full Coplanar Wave Guide

Half Coplanar Wave Guide Layout

ADS Schematic of Coplanar Waveguide

Layout Simulation

De-Embedding In AdS

Equation 1: Tm = Tmeasured = stot(s)

Equation 2: Tf = Tm/(((stot(simulations_half_cplanarwg(s))))^2

Equation 3: St = ttos((Tf)

V_DCSRC1Vdc=-.68 V

V_DCSRC2Vdc=2.0 V

S_ParamSP1


S-PARAMETERS


LL2

R=L=2200 nH

CC2C=2400 pF

LL1

R=L=2200 nH

CC1C=2400 pF

S2PSNP2File="half_1.s2p"

21

Ref

TermTerm1

Z=50 OhmNum=1

S2PSNP1File="half_1.s2p"

21

Ref


TermTerm2

Z=50 OhmNum=2

DC-IV Curves of Transistor

Final Amplifier Layout

MLINTL8

L=10 mil {t}W=1.24 mil {-t}Subst="MSub1"

MLINTL7


MLINTL9

L=5 mil {t}W=1.295 mmSubst="MSub1"

MLINTL10


MLINTL1

L=0.0614 mm {t}W=1.055334 mm {t}Subst="MSub1"

MLINL8+L2

L=1.3820 mmW=0.351778 mm {t}Subst="MSub1"

MLINL21


MLINL9


MLINC5


MLINL3


MLINL17+L11


MLINL13


MLINC8


MLINTL3


MLINTL4


MLINTL6


MLINTL2


MLINTL5


MLINL15+L10


MLINL20


MLINL5+L1


VIAGNDV5


TermTerm1

Z=50 OhmNum=2

MTEE_ADSTee5


VIAGNDV3



CC15C=2400 pF

LL19

R=L=2200 nH

CC16C=2400 pF

MSTEPStep6


MTEE_ADSTee4


VIAGNDV6


MTEE_ADSTee8


MTEE_ADSTee10


MTEE_ADSTee7

W3=.703556 mmW2=.703556 mmW1=.703556 mmSubst="MSub1"MTEE_ADS

Tee1


MSTEPStep7


TermTerm2

Z=50 OhmNum=1

CC9C=2400 pF

V_DCSRC2Vdc=-.45 V

S_ParamSP1

Step=Stop=11 GHzStart=2.5 GHz

S-PARAMETERS

MTEE_ADSTee2


MLINL4


V_DCSRC1Vdc=2.0 V

VIAGNDV10


CC10C=2400 pF

LL18

R=L=2200 nH

MLINC2


MSTEPStep1


MLINL6


CC11C=2400 pF

VIAGNDV8


MSUBMSub1


MSub


MTEE_ADSTee3


MLINL12


MSTEPStep5


MLINC7


CC14C=2400 pF

VIAGNDV14


VIAGNDV11


MTEE_ADSTee9



VIAGNDV13


MTEE_ADSTee6


VIAGNDV12


VIAGNDV2



MLINTL8


MLINTL7


MLINTL9


MLINTL10


MLINTL1


MLINL8+L2


MLINL21


MLINL9


MLINC5


MLINL3


MLINL17+L11


MLINL13


MLINC8


MLINTL3


MLINTL4


MLINTL6


MLINTL2


MLINTL5


MLINL15+L10


MLINL20


MLINL5+L1


VIAGNDV5


TermTerm1

Z=50 OhmNum=2

MTEE_ADSTee5


VIAGNDV3



CC15C=2400 pF

LL19

R=L=2200 nH

CC16C=2400 pF

MSTEPStep6


MTEE_ADSTee4


VIAGNDV6


MTEE_ADSTee8


MTEE_ADSTee10


MTEE_ADSTee7

W3=.703556 mmW2=.703556 mmW1=.703556 mmSubst="MSub1"MTEE_ADS

Tee1


MSTEPStep7


TermTerm2

Z=50 OhmNum=1

CC9C=2400 pF

V_DCSRC2Vdc=-.45 V

S_ParamSP1

Step=Stop=11 GHzStart=2.5 GHz

S-PARAMETERS

MTEE_ADSTee2


MLINL4


V_DCSRC1Vdc=2.0 V

VIAGNDV10


CC10C=2400 pF

LL18

R=L=2200 nH

MLINC2


MSTEPStep1


MLINL6


CC11C=2400 pF

VIAGNDV8


MSUBMSub1


MSub


MTEE_ADSTee3


MLINL12


MSTEPStep5


MLINC7


CC14C=2400 pF

VIAGNDV14


VIAGNDV11


MTEE_ADSTee9



VIAGNDV13


MTEE_ADSTee6


VIAGNDV12


VIAGNDV2



Simulationsm1freq=dB(S(2,1))=11.267

10.60GHz


3.970GHz

3 4 5 6 7 8 9 102 11

2

4

6

8

10

12

14

16

0

18

freq, GHz

dB(S

(2,1

))

Readout

m1

Readout

m2m1freq=dB(S(2,1))=11.267

10.60GHz


3.970GHz

3 4 5 6 7 8 9 102 11

-100

0

100

-200

200

freq, GHz

phas

e(S

(2,1

))

Amplifier Gain

Phase Linearity of Amplifier

Stability Factor

k = stability check, k ≥ 1 (unconditionally stable) b = stability measurement, b has to always be

positive

Eqn k = stab_fact(S)

3 4 5 6 7 8 9 102 11

2

4

6

8

10

12

0

14

freq, GHz

k

Eqn b = stab_meas(S)

3 4 5 6 7 8 9 102 11

0.6

0.8

1.0

1.2

0.4

1.4

freq, GHz

b

Noise Figure

nf(2) is the noise figure of the ultra wideband amplifier over the spectrum.

NF is the mean value, 2.06 dB

m3freq=nf(2)=6.676

10.60GHz

3 4 5 6 7 8 9 102 11

5

10

15

0

20

freq, GHz

nf(2)

Readout

m3

m3freq=nf(2)=6.676

10.60GHz

Eqn NF=mean(nf(2)) m4indep(m4)=NF=2.061

0

-8.0E-301

-6.0E-301

-4.0E-301

-2.0E-301

0.0

2.0E-301

4.0E-301

6.0E-301

8.0E-301

-1.0E-300

1.0E-300

2.0609059

2.0609059

2.0609059

2.0609059

2.0609059

NF

Readout

m4

m4indep(m4)=NF=2.061

0

Future Work

Manufacture new full coplanar waveguides Measure S-parameters Do de-embedding Run simulation of amplifier using s-parameter

from de-embedding Re-optimize Manufacture the amplifier

Questions?

Senior Project 2008

Documents

Transcript of Senior Project 2008