Selection Guide - Profusion Plc · Selection Guide The all contents ... ・SBD : VRM = 40 V ~ 150V...
Transcript of Selection Guide - Profusion Plc · Selection Guide The all contents ... ・SBD : VRM = 40 V ~ 150V...
P.1DITOUSE-SGE 2015.01.29
Diode by Circuit Types
Selection Guide
The all contents in this document are as of date of publication.Make sure thatthis is the latest revision of the document beforeuse. Please check the details of the product by data sheet.http://www.sanken-ele.co.jp/en
To place orders or request samples, please contact distributor Profusion plc:[email protected]
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Diodes by Circuit TypesDiodes are used in peripheral circuit of power supply.A part of diode lineup is shown below. Please refer to Sanken’s catalog or website for more information.
Power Supply Application Diode Application page
Non-isolated Buck/Buck-boost Circuit
Low power application For motor control Auxiliary power supply LED lighting, etc.
Freewheel Diode (FRD) P.3
Fly-back Circuit
Low to middle power application Adapter Auxiliary power supply LED lighting, etc.
Snubber Diode (SARS) P.6
Secondary Rectification Diode・SBD : VRM = 40 V ~ 150V・FRD : VRM = 200 V ~ 600 V
P.8LLC Circuit
High power application OA , AV Industrial equipment LED street light, etc.
Bootstrap Diode (FRD) P.14
Power Factor Correction (PFC)
Application for 75W or more Industrial equipment LED lighting, etc.
For PFC・Bypass Diode (Acceptable large current )
・Rectification Diode (FRD)P.15
AC/DC Convertor
VAC
VOUT
AC/DC Convertor
VAC
VOUT
Secondary Rectification Diode
Snubber Diode
VOUT
GND
AC/DC Convertor
GND
REG
VS
Secondary Rectification Diode
Bootstrap Diode
VAC
VPFCOUT
PFCControl IC
Rectification Diode
Bypass Diode
AC/DC Convertor
VAC
VOUT
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AC/DC Convertor
VAC
VOUT
Freewheel DiodeFor Non-isolated Buck and Buck-boost Circuit
Package IF VRM Features Link
SMD Type (SJP) 1A to 3A 200 to 600VFast recovery
trr ≤ 50nsP.4
Through-hole Type(Axial, TO220)
1A to 10A 500 to 600VFast recovery
trr ≤ 50nsP.5
Since buck and buck-boost offline converter IC operates by high frequency, recovery characteristic of freewheel diode needs to be fast. In order for high circuit efficiency, it is recommended to select VF of the diode as low as possible.The fast recovery diodes with low VF for freewheeling are as follows;
AC/DC Convertor
VAC
VOUT
Buck circuit Buck-boost circuit
Freewheel Diode
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Fast Recovery Diode (SMD Type) Freewheel Diode For Non-Isolated Buck and Buck-boost Circuit
Fast Recovery, trr ≤ 50ns
VRM = 200V~600V
IF = 1A~3AX / Y / Z
= 4.5 : 2.6 : 2.15
Unit : mm
VRM IF (AVG) Products Package
IFSM
50HzHalf wave
VF trr
VF (max) IF IF:IR=1:1
200V
1.0A SJPL-D2
SJP
25A 0.98V 1.0A 50ns
2.0A SJPL-H2 25A 0.98V 2.0A 50ns
3.0A SJPL-L2 60A 0.98V 3.0A 50ns
400V 1.5A SJPL-F4
SJP25A 1.3V 1.5A 50ns
3.0A SJPL-L4 30A 1.3V 3.0A 50ns
500V 1.0A SJPD-D5
SJP20A 1.4V 1.0A 40ns
3.0A SJPD-L5 50A 1.4V 3.0A 50ns
600V 2.0A SJPL-H6 SJP 30A 1.5V 2.0A 50ns
Package
SJP
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Fast Recovery, trr ≤ 50ns
VRM = 200V~600V
IF = 1A~10A
Fast Recovery Diode (Through-hole Type) Freewheel Diode For Non-Isolated Buck and Buck-boost Circuit
VRM IF (AVG) Products PackageIFSM
50HzHalf wave
VF trr
VF (max) IF IF:IR=1:1
200V
1.0A AL01Z Axial (φ2.4) 25A 0.98V 1.0A 50ns
2.0A RL10Z Axial (φ4.0) 30A 0.98V 2.0A 50ns
3.5A RL4Z Axial (φ6.5) 80A 0.95V 3.5A 50ns
400V
1.0A AL01 Axial(φ2.4) 20A 1.3V 1.0A 50ns
1.5A EL1 Axial(φ2.7) 40A 1.3V 1.5A 50ns
2.0A RL2 Axial (φ4.0) 40A 1.3V 2.0A 50ns
5.0A FML-G14S TO-220F-2L 70A 1.3V 5.0A 50ns
10AFML-24S TO-220F-3L 70A 1.3V 5.0A 50ns
FMXA-1104S TO-220F-2L 100A 1.5V 10A 25ns
600V
1.2A RD2A Axial (φ4.0) 30A 1.55V 1.2A 50ns
3.0A RL4A Axial (φ6.5) 80A 1.5V 3.0A 50ns
5.0A FML-S16S TO-220F-2L 50A 1.7V 5.0A 50ns
10AFMD-G26S
TO-220F-2L 100A1.7V 10A 50ns
FMXA-1106S 1.98V 10A 28ns
TO220F-2Lφ2.4 φ2.7 φ4.0 φ6.5Package
Axial
TO220F-3L(Center tap)
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Power SupplyControl IC
VAC
Snubber
Controller
SARS
Discharge Loop
Serge Absorb Loop
VDS
Snubber
Power SupplyControl IC
VAC
Controller
Discharge Loop
Serge Absorb Loop
VDS
SARS, Diode for Snubber CircuitUsing SARSUsing FLR Diode
When MOSFET turns off, serge current flows on “Surge
Absorb loop” and It is absorbed by capacitor.
The electrical charge of capacitor is discharged
through ”Discharge loop”. The power is not transferred to
the secondary side. Thus it becomes power dissipation.
When this capacitor is discharged, the recovery current of
the diode flows on the MOSFET. FLR (Fast Recovery Diode)
is beneficial for preventing the MOSFET damage.
When SARS is used, the electrical charge of the capacitor
is discharged through ”Discharge loop” in recovery period
of SARS and this power is transferred to the secondary
side. Thus high circuit efficiency can be achieved.
When this capacitor is discharged, the instantaneous
recovery current of the diode flows on the MOSFET. It is
recommended to add a resistor in series with SARS for the
damage control of MOSFET. (Patented circuit)
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Package
SJP TO-220F-2L Axial-φ2.7mm/φ0.60mm
X / Y / Z
= 4.5 : 2.6 : 2.15
Unit : mm
Axial-φ4.0mm/φ0.78mm
TypePart
NumberVRM
IF
(AVG)
IFSM
50HzHalf-wave
VF
trrIF:IR=1:1
PackageVF
(max)IF
Externalresistance
SARS01 800 V 1.2 A 110 A 0.92 V 1.2 A 2 to18 μs Axial-φ2.7/φ0.60
SARS02 800 V 1.5 A 100 A 0.92 V 1.5 A 2 to18 μs Axial-φ4.0/φ0.78
SARS05 800 V 1 A 30 A 1.05 V 1 A 2 to 18 μsSJP(SMA:4.5×
2.6)
Built-in resistance(22Ω)
SARS10 800 V 0.3 A 1.5 A 13 V 0.5 A 1 to 9 μs TO220F-2L
Low Noise, Improve Circuit Efficiency
SARS, Diode for Snubber Circuit
Low noise;
Prevention of ringing at Power MOSFET turn-off
PCB area saving;
Reducing number of filter circuit components
Improve circuit efficiency
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Diode for Secondary RectificationThe secondary rectification diode have forward current flow for charging Secondary electrolytic capacitor and recovery current flow.In order for high circuit efficiency, it is recommended to select the diode with low VF and fast recovery characteristics.
AC/DC convertor IC
VAC
Cont.
GND
VOUT
Secondary Rectification Diode
Flyback Type Half bridge Type
LLC control IC
VOUT
GND
REG
VS
Secondary Rectification Diode
DC input
VB
VRM Diode IF(AVG) VF trr Link
40 V, 60 V Schottky 10 ~ 30A ≤ 0.7 V - P.9
80 ~ 150 V Schottky 10 ~ 30A ≤ 0.92 V - P.10
200 V, 300 V Fast Recovery 10 ~ 20A ≤ 1.3V 17 ~ 40ns P.11
400 V, 600V Fast Recovery 10 ~ 20A ≤ 1.98V 25 ~ 50ns P.12
650V SiC Schottky 10 ~ 20A ≤ 1.75 V - P.13
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Schottky Diode, VRM ≥ 40V Secondary Rectification Diode
Low VF ≤ 0.7 V
VRM = 40 V ~ 60 V
TO-220F-3L
VRM IF (AVG) Package Part NumberIFSM
50HzHalf wave
VF
VF (max) IF
40 V
5 A x 2
TO-220F-3L
FMW-24L 100 A 0.55 V 5 A
7.5 A x 2 FMW-24H 120A 0.55V 7.5A
10 A x 2 FMW-2204 150 A 0.55 V 10 A
15 A x 2 TO-3PF-3L FMW-4304 150A 0.55V 15A
60 V
5 A x 2
TO-220F-3L
FMW-2106 100 A 0.70 V 5 A
7.5 A x 2 FMW-2156 100 A 0.70 V 7.5 A
10 A x 2 FMW-2206 120 A 0.70 V 10 A
15 A x 2 TO-3PF-3L FMW-4306 150A 0.70V 15A
TO-3PF-3L
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Schottky Diode, VRM ≥ 80V Secondary Rectification Diode
Low VF ≤ 0.92 V
VRM = 80 V ~ 150 V
VRM IF (AVG) Package Part NumberIFSM
50HzHalf wave
VF
VF (max) IF
80 V10 A x 2
TO-220F-3LFMEN-2208 120 A 0.76 V 10 A
15 A x 2 FMEN-2308 150 A 0.765 V 15 A
90 V 5 A x 2 TO-220F-3L FMW-2109 50 A 0.90 V 5.0 A
100 V
5 A x 2
TO-220F-3L
FMEN-210A 100 A 0.85 V 5.0 A
7.5 A x 2 FMEN-215A 100 A 0.85 V 7.5 A
10 A x 2 FMEN-220A 120 A 0.85 V 10 A
15 A x 2 FMEN-230A 150 A 0.85 V 15 A
15 A x 2 TO-3PF-3L FMEN-430A 150 A 0.85 V 15 A
150 V
5 A x 2
TO-220F-3L
FMEN-210B 100 A 0.92 V 5 .0A
10 A x 2 FMEN-220B 120 A 0.92 V 10 A
15 A x 2 FMEN-230B 150 A 0.92 V 15 A
TO-220F-3L TO-3PF-3L
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Fast Recovery Diode, trr ≤ 40ns VRM ≥ 200V Secondary Rectification Diode
Fast Recovery , trr = 17 ~ 40ns
Low VF ≤ 1.3V
VRM = 200 V ~ 300 V TO-220F-3LTO-220F-2L
VRM IF (AVG) Package Part NumberIFSM (A)50Hz
Half wave
VF trrIF:IR=1:1VF (max) IF
200 V
10 A TO-220F-2LFMX-G22S 150 0.98 V 10 A 30 ns
FML-G22S 150 0.98 V 10 A 40 ns
5 A x 2
TO-220F-3L
FMX-12SL 65 1.25 V 5 A 30 ns
5 A x 2 FMXA-2102ST 100 1.20 V 5 A 25 ns
7.5 A x 2 FMX-22SL 100 0.98 V 7.5 A 30 ns
10 A x 2 FMXA-2202S 100 1.20 V 10 A 25 ns
10 A x 2 TO-3PF-3L FMXS-4202S 150 1.05 V 10 A 30 ns
300 V
5 A x 2
TO-220F-3L
FMX-23S 65 1.30 V 5 A 30 ns
7.5 A x 2 FMXA-2153S 75 1.28 V 7.5 A 17 ns
10 A x 2 FMXA-2203S 100 1.30 V 10 A 25 ns
10 A x 2 TO-3PF-3L FMXA-4203S 100 1.30 V 10 A 25 ns
TO-3PF-3L
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Secondary Rectification Diode
Fast Recovery , trr = 25 ~ 50ns
Low VF ≤ 1.98V
VRM = 400 V ~ 600 V
VRM IF (AVG) Package Part NumberIFSM (A)50Hz
Half wave
VF trrIF:IR=1:1VF (max) IF
400 V10 A TO-220F-2L FMXA-1104S 100 1.50 V 10 A 25 ns
10 A x 2 TO-220F-3L FML-24S 70 1.30 V 5 A 50 ns
600 V
10 ATO-220F-2L
FMD-G26S 100 1.7 V 10 A 50 ns
FMX-1106S 50 1.6 V 10 A 30 ns
FMXA-1106S 100 1.98 V 10 A 28 ns
FMXK-1106S 100 1.75 V 10 A 27 ns
20A FMXS-1206S 180 1.6V 20A 35ns
10 A x 2 TO-220F-3LFMXS-2206S 100 1.6 V 10 A 30 ns
FMXK-2206S 100 1.75 V 10 A 27 ns
10 A x 2 TO-3PF-3L FMD-4206S 100 1.7 V 10 A 50 ns
TO-220F-3LTO-220F-2L TO-3PF-3L
Fast Recovery Diode, trr ≤ 50ns VRM ≥ 400V
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SiC Schottky Diode, VRM = 650V Secondary Rectification Diode
High voltage Schottky Diode
Low VF ≤ 1.75 V
VRM = 650 V
VRM IF (AVG) Package Part NumberIFSM (A)50Hz
Half wave
VF trrIF:IR=1:1VF (max) IF
650 V10 A TO-220F-2L FMCA-11065 40A 1.75 V 10 A -
10 A x 2 TO-220F-3L FMCA-22065 40A 1.75 V 10 A -
TO-220F-3LTO-220F-2L
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Bootstrap Diode
LLC control IC
VOUT
GND
REG
VS
Bootstrap DiodeDC input
VB
Bootstrap Diode is used for high-side driver of power supply circuit.Since the recovery current flows on the diode depending on the switching frequency of the driver, it is recommended to use a diode with fast recovery characteristic.For the bootstrap diode selection, the applied voltage of Power MOSFET and the high-side sink current need to be considered.
SJP
VRM IF (AV) パッケージ Part NumberIFSM
50Hz Half wave
VF (max.) (IF=IF (AV))
trr IF:IR=1:1
600 V
2.0 A SJP SJPL-H6 30 A 1.5 V 50 ns
2.0 A SJP SJPX-H6 20 A 1.5 V 30 ns
0.5 A Axial φ2.4/φ0.6 AG01A 15 A 1.8 V 100 ns
0.6 A Axial φ2.7/φ0.78 EG1A 10 A 2.0 V 100 ns
1.0 A Axial φ4.0/φ0.78 RG10A 50 A 2.0 V 100 ns
1.2 A Axial φ4.0/φ0.98 RD2A 30 A 1.55 V 50 ns
800 V 0.5 A Axial φ2.4/φ0.6 AB01B 10 A 2.0 V 200 ns
X / Y / Z
= 4.5 : 2.6 :
2.15(mm)
Axial
Φ2.4mm
/φ0.6mm
Axial
Φ2.7mm
/φ0.78mm
Axial
Φ4.0mm
/φ0.78mm
Axial
Φ4.0mm
/φ0.98mm
Y
Z
X
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Operation Mode Features Link
Bypass Diode ―High Power, IFSM > 50A Low VF ≤ 0.95V
P.18
Rectification Diode
DCMCRM
Low VF ≤ 1.3V P.19
CCM• Fast recovery diode, trr ≤ 50ns• SiC Schottky Diode
P.20P.21
VAC
VPFCOUT
GND
PFCControl IC
Rectification Diode
Bypass Diode
Diode for PFC
PFC circuit consists of a Bypass Diode and a Rectification Diode.Each diode needs to be selected according to their use.
Points of selection for Bypass Diode→P.16
Points of selection for Rectification Diode →P.17
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Points of Selection for Bypass Diode
VAC
VPFCOUT
GND
PFCControl IC
Rectification Diode
Bypass Diode1. Functions of Bypass Diode
For Protecting MOSFET and Rectification Diode from Inrush CurrentWhen the inductance is saturated by the inrush current, large current flows to the rectification diode, the diode has a risk of breakdown.Since saturation of inductance is prevented by flowing inrush current to the bypass diode, MOSFET and rectification diode are protected.
For protecting Bridge Diode from Lightning SurgeIf the lightning surge is injected to the circuit, bridge diode has a risk of breakdown. Thus, the bypass diode changes the energy of the lightning surge flow and it is absorbed by electrolytic capacitor.
Key points of Bypass Diode selection;1) Acceptable large current in short period (IFSM > 50A)2) Low VF than rectification diode (VF ≤ 0.95V)
2. Electrical Characteristics of Bypass Diode
In order to change flow of the inrush current and the lightning surge to the bypass diode, VF of Bypass diode needs to be lower than VF of rectification diode.When output voltage becomes higher than input voltage, the bypass diode turns off. Thus recovery characteristic of the diode is not considered. The pulse current and VF characteristic needs to be considered for the diode selection.
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The Rectification Diode of PFC should be selected according to the operation mode of PFC
Point of Selection for Rectification Diode
Discontinuous Conduction Mode (DCM)
Critical Conduction Mode(CRM)
Continuous Conduction Mode(CCM)
Features
There is a period when the current that runs through L becomes zero (Frequency is fixed)
L value: Small
The current that runs through L becomes zero for an instant (ON time is fixed)
L value: Medium
The current that runs through L does not become zero (Frequency is fixed)
L value: Large
Advantages
MOSFET turns ON when the current that runs through a diode becomes zero ・There is almost no recovery current in the rectifier diode ・Switching noise is small
With almost no recovery current, better efficiency is achieved when focusing on VF
Peak current of MOSFET is small
Ripple of input current is small
Normal mode noise is small
Disadvantages
Peak current of MOSFET is large
Ripple of input current is large
Normal mode noise is large
MOSFET turns ON when the current runs through the diode
・Recovery current runs through the rectifier diode, resulting in large loss
・Switching noise is large
To reduce loss, use a diode with excellent reverse recovery time (trr)
Key points in selecting a rectifier diode ;・DCM, CRM: Low VF Diode (VF ≤ 1.3V)・CCM: Fast Recovery Diode (trr ≤ 50 ns) with Low VF
IL IL IL
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Low VF = 0.95V(max.) VRM = 600V
VF ≤ 0.95 V, VRM = 600 VBypass Diode for PFC
φ4.0mm/φ0.78mm φ6.5mm/φ1.4mm Axial-φ2.7mm/φ0.78mm
VRM IF (AVG) Package Part Number
IFSM
10ms
Half wave
VF IR/H.IR(VR=VRM)VF (max.) IF
600 V
1.0 A Axial φ2.7 EM2A 80 A 0.92 1.2 A 10 μA / 50 μA
1.2 A Axial φ4.0 RM 11A 100 A 0.92 1.5 A 10 μA / 50 μA
1.2 A Axial φ4.0 RM 10A 150 A 0.91 1.5 A 10 μA / 50 μA
1.7 A Axial φ6.5 RM 4A 200 A 0.95 3.0 A 10 μA / 50 μA
1.8 A Axial φ6.5 RM 4AM 350 A 0.92 3.5 A 10 μA / 50 μA
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Axial φ6.5 TO-220F-2L TO-220F-3L TO-3PF-2L TO-3PF-3L TO-3P-3L TO-247-3L
VF ≤ 1.3 V, VRM = 600 V
For DCM and CRM Low VF = 1.30V(max.) VRM = 600V trr ≤ 200ns
Rectification Diode for DCM and CRM PFC
VRM IF (AVG) PackagePart
Number
VF IFSM
50Hz Half wavetrr
IF:IR=1:1VF(Max.) IF
600 V
3.0 AAxial (φ6.5/φ1.4) RY2A 1.15 V 3.0 A 50 A 200 ns
Axial (φ6.5/φ1.4) RN4A 1.30 V 3.0 A 50 A 100 ns
5.0 A TO-220F-2L FMN-1056S 1.30 V 5.0 A 60 A 100 ns
10 A TO-220F-2L FMNS-1106S 1.30 V 10 A 100 A 100 ns
15A TO-220F-2L FMN-1156S 1.30 V 15 A 150 A 100 ns
20 A TO-220F-2L FMN-1206S 1.30 V 20 A 150 A 150 ns
30 A TO-3PF-2L FMN-3306S 1.30 V 30 A 150 A 200 ns
10 A x 2 TO-220F-3L FMN-2206S 1.30 V 10 A 150 A 100 ns
15 A x 2
TO-3PF-3L FMN-4306S 1.30 V 15 A 150 A 150 ns
TO-3P-3L CTNS-4306S 1.30 V 15 A 150 A 100 ns
TO-247-3L CTNS-6306S 1.30 V 15 A 150 A 100 ns
30 A x 2TO-3P-3L CTNS-4606S 1.30 V 30 A 150 A 150 ns
TO-247-3L CTNS-6606S 1.30 V 30 A 150 A 150 ns
UD
UD
UD
UD : Under Development
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For CCM Fast Recovery Diode
trr = 50 ns (max.) VRM = 600VIF = 1.2 A to 20 A
trr ≤ 50 ns, VRM = 600 VRectification Diode for CCM PFC, Fast Recovery Diode
VRM IF (AVG) PackagePart
Number
VF IFSM
50HzHalf wave
trrIF:IR=1:1
VF (Max.) IF
600 V
1.2 A Axial (φ4.0/φ0.78) RD2A 1.55 V 1.2 A 30 A 50 ns
3.0 A Axial (φ6.5/φ1.4) RL4A 1.5 V 3.0 A 80 A 50 ns
5.0 A TO-220F-2L FMX-G16S 1.5 V 5 A 50 A 30 ns
8.0 A TO-220F-2L FMXK-1086S 1.75 V 8 A 100 A 27 ns
10 A TO-220F-2LFMXA-1106S 1.98 V 10 A 100 A 28 ns
FMX-1106S 1.60 V 10 A 100 A 30 ns
20 A TO-220F-2L FMXS-1206S 1.60 V 20 A 100 A 35 ns
Axial φ4.0 Axial φ6.5 TO-220F-2L
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VRM IF (AVG) PackagePart
Number
VF IFSM
50HzHalf wave
trrIF:IR=1:1VF(Max.) IF
600 V
10 A x 2
TO-220F-3LFMXK-2206S 1.75 V 10 A 100 A 27 ns
FMXS-2206S 1.60 V 10 A 100 A 30 ns
TO-3PF-3L
FMXA-4206S 1.98 V 10 A 100 A 28 ns
FMX-4206S 1.50 V 10 A 100 A 30 ns
FMD-4206S 1.70 V 10 A 100 A 50 ns
15 A x 2TO-3P-3L CTXS-4306S 1.70 V 15 A 150 A 30 ns
TO-247-3L CTXS-6306S 1.70 V 15 A 100 A 30 ns
30 A x 2TO-3P-3L CTXS-4606S 1.70 V 30 A 150 A 35 ns
TO-247-3L CTXS-6606S 1.70 V 30 A 150 A 35 ns
650 V10 A TO-220F-2L FMCA-11065 1.75 V 10A 40 A SiC Schottky
10 A x 2 TO-220F-3L FMCA-22065 1.75 V 10A 40 A SiC Schottky
trr ≤ 50 ns, VRM = 600 V /650 V
TO-220F-2L TO-220F-3L TO-3PF-3L TO-3P-3L TO-247-3L
Rectification Diode for CCM PFC, Fast Recovery and SiC Schottky Diode
Fast recoverytrr ≤ 50 ns VRM = 600V, IF = 20 A to 60 A
SiC Schottky VRM = 650V , IF = 10 A to 20 A
UD : Under Development
UD
UD
UD
UD
UD
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IMPORTANT NOTES
The contents in this document are subject to changes, for improvement and other purposes, without notice. Make sure that thisis the latest revision of the document before use.
Application examples, operation examples and recommended examples described in this document are quoted for the sole purpose of reference for the use of the products herein and Sanken can assume no responsibility for any infringement of industrial property rights, intellectual property rights, life, body, property or any other rights of Sanken or any third party which may result from its use.
Unless otherwise agreed in writing by Sanken, Sanken makes no warranties of any kind, whether express or implied, as to the products, including product merchantability, and fitness for a particular purpose and special environment, and the information, including its accuracy, usefulness, and reliability, included in this document.
Although Sanken undertakes to enhance the quality and reliability of its products, the occurrence of failure and defect of semiconductor products at a certain rate is inevitable. Users of Sanken products are requested to take, at their own risk, preventative measures including safety design of the equipment or systems against any possible injury, death, fires or damages to the society due to device failure or malfunction.
Sanken products listed in this document are designed and intended for the use as components in general purpose electronic equipment or apparatus (home appliances, office equipment, telecommunication equipment, measuring equipment, etc.). When considering the use of Sanken products in the applications where higher reliability is required (transportation equipment and its control systems, traffic signal control systems or equipment, fire/crime alarm systems, various safety devices, etc.), and whenever long life expectancy is required even in general purpose electronic equipment or apparatus, please contact your nearest Sanken sales representative to discuss, prior to the use of the products herein.The use of Sanken products without the written consent of Sanken in the applications where extremely high reliability is required (aerospace equipment, nuclear power control systems, life support systems, etc.) is strictly prohibited.
When using the products specified herein by either (i) combining other products or materials therewith or (ii) physically, chemically or otherwise processing or treating the products, please duly consider all possible risks that may result from all such uses in advance and proceed therewith at your own responsibility.
Anti radioactive ray design is not considered for the products listed herein.
Sanken assumes no responsibility for any troubles, such as dropping products caused during transportation out of Sanken’s distribution network.
The contents in this document must not be transcribed or copied without Sanken’s written consent.
DISTRIBUTOR
www.profusionplc.com
Southend-on-SeaEssexSS2 6UNUnited Kingdom
+44 (0)1702 [email protected]