SEL Heavy Ion Test Report of 256Kx16 Bit High ... - ESCIES
Transcript of SEL Heavy Ion Test Report of 256Kx16 Bit High ... - ESCIES
Prepared by Marc Poizat, Michele Muschitiello (TEC-QEC) Reference ESA-TECQEC-TR-1011 Issue 1 Revision Date of Issue 27/08/2015 Status Authorised Document Type TR Distribution
ESA UNCLASSIFIED – For Official Use
SEL Heavy Ion Test Report of 256Kx16 Bit High Speed SRAM (K6R4016V1C-TI10) from Samsung
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Table of contents:
1 INTRODUCTION ................................................................................................................................ 42 APPLICABLE DOCUMENTS ............................................................................................................... 43 DEVICES TESTED .............................................................................................................................. 44 TEST FACILITY AND TEST SYSTEM .................................................................................................. 65 TEST CONDITIONS ............................................................................................................................ 66 TEST METHOD .................................................................................................................................. 77 TEST RESULTS .................................................................................................................................. 88 CONCLUSIONS .................................................................................................................................. 89 APPENDIX ......................................................................................................................................... 9
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1 INTRODUCTION
This study was undertaken in the frame of the Proba 3 project to determine the single event latchup susceptibility of the 256Kx16 Bit High Speed SRAM (K6R4016V1C-TI10) from Samsung. The device was monitored for destructive events induced by exposing it to a heavy ion beam at the UCL Heavy ion facility. Proba-3 is ESA’s – and the world’s – first precision formation flying mission. A pair of satellites will fly together maintaining a fixed configuration as a ‘large rigid structure’ in space to prove formation flying technologies.
The mission will demonstrate formation flying in the context of a large-scale science experiment. The paired satellites will together form a 150-m long solar coronagraph to study the Sun’s faint corona closer to the solar rim than has ever before been achieved. Beside its scientific interest, the experiment will be a perfect instrument to measure the achievement of the precise positioning of the two spacecraft.
2 APPLICABLE DOCUMENTS
AD1: ESCC25100 Single Event Effects Test Method and Guidelines AD2: Datasheet Samsung K6R4016V1C-TI10
3 DEVICES TESTED
Part Type K6R4016V1C-TI10, Manufacturer Samsung Part Function SRAM Technology CMOS Date Code 419 (Year and week) Part Marking SAMSUNG 419 K6R4016V1C-TI10 TZAL32DD Korea Sample Size 10
The dice of the parts were exposed by removing the epoxy on the top. The epoxy removal was achieved by chemical etch (wet and/or dry) before soldering the parts on the test board.
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Figure 1 the part marking on the top plastic package(TSOP44).
Figure 2 The exposed die after the chemical etch of the covering epoxy. The measured die size is about 34.6 mm2.
Figure 3 Detail of the die markings
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4 TEST FACILITY AND TEST SYSTEM
Facility: UCL HIF with high LET cocktail. If possible, the new high energy Xe beam will be used (Energy = 995MeV, LET = 62.5MeV.cm2/mg, range = 73.1µm)
Flux: Maximum 1 x 105 particles/cm2/s Fluence: All tests will run up to a fluence of 1 x 107 particles/cm2 or until 100 destructive
events occurred
Ion Energy(1) (MeV)
LET(1) (MeV•cm2/mg)
Range(1) (µm)
13C4+ 131 1.3 269.3
14N4+ 122 1.9 170.8
20Ne6+ 190 3.6 150.6
40Ar12+ 379 10.0 120.5
58Ni18+ 582 20.4 100.5
83Kr25+ 779 32.2 95.0
124Xe35+ 995 62.5 73.1
note (1): at the device
The following test equipment will be used:
- Power supply (Keithley 2612B) - Oscilloscope Tektronik TDS 3054B - Latch-up Tester 30463 TRAD
5 TEST CONDITIONS
Test Temperature: Room temperature. Note: the device will be operated at temperatures < 25degC during the Proba 3 mission, hence SEL testing at high temperature is not performed.
Bias Conditions: Supply voltages=+3.45V ; GND=0V
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CY7C1059DV33-10ZSXI
100100
100100
100100
100100
100100
100100
100100
100100
100100
100100
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100
R141426
GND
GND
GNDCY7C1059DV33-10ZSXI
100100
100100
100100
100100
100100
100100
100100
100100
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R141426
GND
GND
GNDCY7C1059DV33-10ZSXI
100100
100100
100100
100100
100100
100100
100100
100100
100100
100100
100
100
100
R141426
GND
GND
GNDCY7C1059DV33-10ZSXI
100100
100100
100100
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100100
100100
100100
100100
100100
100100
100
100
100
R141426
GND
GND
GNDCY7C1059DV33-10ZSXI
100100
100100
100100
100100
100100
100100
100100
100100
100100
100100
100
100
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R141426
GND
GND
GND
IC2A03
A14
A25
A36
A47
A516
A617
A718
A819
I/O00 9
I/O01 10
I/O02 13
I/O03 14
I/O04 31
I/O05 32
I/O06 35
I/O07 36A920
A1026
A1127
A1228
A1329
A1430 WE 15CE 8
OE 37
A1538
A1639
+3V 11
GND 12
+3V 33
GND 34A1740
A1841
A1925
R34R24
R35R25
R36R26
R37R27
R38R28
R39R29
R40R30
R41R31
R42R32
R43R33
R46
R45
R44
X2
IC3A03
A14
A25
A36
A47
A516
A617
A718
A819
I/O00 9
I/O01 10
I/O02 13
I/O03 14
I/O04 31
I/O05 32
I/O06 35
I/O07 36A920
A1026
A1127
A1228
A1329
A1430 WE 15CE 8
OE 37
A1538
A1639
+3V 11
GND 12
+3V 33
GND 34A1740
A1841
A1925
R57R47
R58R48
R59R49
R60R50
R61R51
R62R52
R63R53
R64R54
R65R55
R66R56
R69
R68
R67
X3
IC4A03
A14
A25
A36
A47
A516
A617
A718
A819
I/O00 9
I/O01 10
I/O02 13
I/O03 14
I/O04 31
I/O05 32
I/O06 35
I/O07 36A920
A1026
A1127
A1228
A1329
A1430 WE 15CE 8
OE 37
A1538
A1639
+3V 11
GND 12
+3V 33
GND 34A1740
A1841
A1925
R80R70
R81R71
R82R72
R83R73
R84R74
R85R75
R86R76
R87R77
R88R78
R89R79
R92
R91
R90
X4
IC5A03
A14
A25
A36
A47
A516
A617
A718
A819
I/O00 9
I/O01 10
I/O02 13
I/O03 14
I/O04 31
I/O05 32
I/O06 35
I/O07 36A920
A1026
A1127
A1228
A1329
A1430 WE 15CE 8
OE 37
A1538
A1639
+3V 11
GND 12
+3V 33
GND 34A1740
A1841
A1925
R103R93
R104R94
R105R95
R106R96
R107R97
R108R98
R109R99
R110R100
R111R101
R112R102
R115
R114
R113
X5
IC1A03
A14
A25
A36
A47
A516
A617
A718
A819
I/O00 9
I/O01 10
I/O02 13
I/O03 14
I/O04 31
I/O05 32
I/O06 35
I/O07 36A920
A1026
A1127
A1228
A1329
A1430 WE 15CE 8
OE 37
A1538
A1639
+3V 11
GND 12
+3V 33
GND 34A1740
A1841
A1925
R11R1
R12R2
R13R3
R14R4
R15R5
R16R6
R17R7
R18R8
R19R9
R20R10
R23
R22
R21
X1
VCC2
VCC2
VCC3
VCC3
VCC4
VCC4
VCC5
VCC5
VCC1
VCC1
1.0
Operating frequency: Static condition
6 TEST METHOD
The goal of this test is to evaluate the potential latchup sensitivity of the Device Under Test (DUT). During the test, the power supply is applied to the DUT via the latchup protection system TRAD 30463 (GUARD system). If the current in stand by condition as measured at the beginning of the irradiation is exceeded by 50% or by 5mA (whichever is the higher) during at least 5 ms (hold time), the latchup protection system is triggered and the DUT is powered off for 5 ms or more (Tc or cut off time). After Tc, the nominal biasing conditions of the DUT are resumed. Each time the SEL protection is triggered, the event is counted as one latchup. The figure below illustrates the latchup detection and protection scheme of the DUT.
A synoptic view of the test bench is given below:
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7 TEST RESULTS
During testing, three devices were irradiated with Xenon beam at normal incidence up to a fluence of 1E7/cm2. No latchup occurred during the experiment yielding a threshold LET for latchup > 62.5MeV.cm2/mg.
8 CONCLUSIONS
The goal of this test was to assess the single event latchup susceptibility of the 256Kx16 Bit High Speed SRAM (K6R4016V1C-TI10) from Samsung (DC419). No latchup event was detected up to an LET of 62.5MeV.cm2/mg, which is compliant with the Proba3 requirements.
Power Supply Latchup Protection
System Device Under
Test
Oscilloscope
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9 APPENDIX
The test sequence for the three tested devices is shown in the table below:
Nb
events
Cross
Section
Run Run
UCL Component Type of test Configuration
Frequency
(MHz)
Part
# T° Ion
Energy
(MeV)
Range
(µm)
LET
(MeV.cm2.mg-
1)
Tilt
(°)
LET Eff
(MeV.cm2.mg-
1)
Range
eff
(µm)
Flux Re
(#/cm2.sec)
Time
Re
(s)
Time
Re
(h:m:s)
Fluence
(#/cm2)
Run
Dose
(krad)
Total
Dose
(krad)
SEL SEL Comments
Start at 04:30am
8 211 K6R4016V1C SEL Static N/A 1 25 Xe 995 73 62.5 0 62.50 73.1 12,330 811 0:13:31 1.00E+07 10.000 10.000 0 0.00E+00 Start with flux 2E3, then increase up to 1.5E4
9 212 K6R4016V1C SEL Static N/A 3 25 Xe 995 73 62.5 0 62.50 73.1 15,032 157 0:02:37 2.36E+06 2.360 2.360 0 0.00E+00 Run aborted (Guard param modified while running)
10 213 K6R4016V1C SEL Static N/A 3 25 Xe 995 73 62.5 0 62.50 73.1 15,060 664 0:11:04 1.00E+07 10.000 12.360 0 0.00E+00
11 214 K6R4016V1C SEL Static N/A 5 25 Xe 995 73 62.5 0 62.50 73.1 15,152 660 0:11:00 1.00E+07 10.000 10.000 0 0.00E+00