SCT3040KL: SiC Power Devices -...
Transcript of SCT3040KL: SiC Power Devices -...
SCT3040KL N-channel SiC power MOSFET
1200V
55A
VDSS
ID
PD
RDS(on) (Typ.) 40mW
lOutline
lInner circuit
lPackaging specifications
TO-247N
Tube
-
Type
Packing
Reel size (mm)
C11
SCT3040KL
Basic ordering unit (pcs)
Tape width (mm) -
30
Marking
Taping code
lFeatures
262W
lApplication
1) Low on-resistance
2) Fast switching speed
3) Fast reverse recovery
4) Easy to parallel
5) Simple to drive
6) Pb-free lead plating ; RoHS compliant
Gate - Source voltage (DC) VGSS -4 to +22 V
lAbsolute maximum ratings (Ta = 25°C)
Symbol Value Unit
Drain - Source voltage
Continuous drain currentTc = 25°C
Tc = 100°C
Pulsed drain current
Parameter
ID,pulse *2 137
Junction temperature Tj 175 °C
Range of storage temperature Tstg -55 to +175 °C
A
VDSS 1200 V
ID *1 55 A
ID *1 39 A
• Induction heating
• Motor drives
• Solar inverters
• DC/DC converters
• Switch mode power supplies
Gate-Source Surge Voltage (tsurge < 300nsec) VGSS_surge*3
-4 to +26 V
Recommended Drive Voltage VGS_op*4 0 / +18 V
(1) Gate(2) Drain(3) Source
*1 Body Diode
(1) (2) (3)
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
TSZ22111・14・001 1/12
TSQ50211-SCT3040KL
14.Jun.2018 - Rev.005
Datasheet
SCT3040KL
lThermal resistance
Parameter SymbolValues
UnitMin. Typ. Max.
UnitMin. Typ. Max.
Thermal resistance, junction - case RthJC - 0.44 0.57 °C/W
lElectrical characteristics (Ta = 25°C)
Parameter Symbol ConditionsValues
Drain - Source breakdown
voltageV(BR)DSS VGS = 0V, ID = 1mA 1200 - - V
Zero gate voltage
drain currentIDSS
VDS = 1200V, VGS = 0V
mATj = 25°C - 1 10
Tj = 150°C - 2
Gate - Source leakage current IGSS+ VGS = +22V, VDS = 0V - - 100 nA
-
5.6 V
Gate - Source leakage current IGSS- VGS = -4V, VDS = 0V - - -100 nA
Gate threshold voltage VGS (th) VDS = 10V, ID = 10mA 2.7 -
Static drain - source
on - state resistanceRDS(on)
*5
VGS = 18V, ID = 20A
mWTj = 25°C - 40 52
Tj = 125°C - 60 -
- WGate input resistance RG f = 1MHz, open drain - 7
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001 2/12
TSQ50211-SCT3040KL
14.Jun.2018 - Rev.005
Datasheet
SCT3040KL
lElectrical characteristics (Ta = 25°C)
Parameter Symbol ConditionsValues
UnitMin. Typ. Max.
S
Input capacitance Ciss
pFOutput capacitance Coss
Transconductance gfs *5
Reverse transfer capacitance -Crss f = 1MHz - 27
-
VGS = 0V - 1337 -
VDS = 800V - 76 -
VDS = 10V, ID = 20A
pF
Turn - on delay time td(on) *5 VDD = 400V, ID = 18A - 21 -
nsRise time tr
*5
Effective output capacitance,
energy relatedCo(er)
VGS = 0V
VDS = 0V to 600V- 122 -
Fall time tf *5 RG = 0W - 24 -
VGS = 18V/0V -
UnitMin. Typ. Max.
39 -
Turn - off delay time td(off) *5 RL = 22W - 49 -
mJ
Turn - off switching loss Eoff *5 - 118 -
Turn - on switching loss Eon *5 VDD = 600V, ID=20A
VGS = 18V/0V
RG = 0W L=250mH
*Eon includes diode
reverse recovery
- 283 -
Qg *5 VDD = 600V - 107 -
lGate Charge characteristics (Ta = 25°C)
Parameter Symbol ConditionsValues
- 8.3
V
- 41 -
Gate plateau voltage V(plateau) VDD = 600V, ID = 20A - 9.6 -
nCGate - Source charge Qgs *5 ID = 20A - 22 -
Gate - Drain charge Qgd *5 VGS = 18V
Total gate charge
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001 3/12
TSQ50211-SCT3040KL
14.Jun.2018 - Rev.005
Datasheet
SCT3040KL
*1 Limited only by maximum temperature allowed.
*2 PW 10ms, Duty cycle 1%
*3 Example of acceptable Vgs waveform
*4 Please be advised not to use SiC-MOSFETs with Vgs below 13V as doing so may cause
thermal runaway.
*5 Pulsed
lBody diode electrical characteristics (Source-Drain) (Ta = 25°C)
Parameter Symbol ConditionsValues
UnitMin. Typ. Max.
A
Inverse diode direct current,
pulsedISM
*2 - - 137 A
Inverse diode continuous,
forward currentIS
*1
Tc = 25°C
- - 55
V
Reverse recovery time trr *5
IF = 20A, VR = 600V
di/dt = 1100A/ms
- 25 - ns
Reverse recovery charge Qrr *5
Forward voltage VSD *5 VGS = 0V, IS = 20A - 3.2 -
- 115 - nC
Peak reverse recovery current Irrm *5
- 9 - A
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001 4/12
TSQ50211-SCT3040KL
14.Jun.2018 - Rev.005
Datasheet
SCT3040KL
lElectrical characteristic curves
Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area
Pow
er
Dis
sip
ation
: P
D[W
]
Dra
in C
urr
ent
: I D
[A]
Case Temperature : TC [°C] Drain - Source Voltage : VDS [V]
Fig.3 Typical Transient Thermal Resistance vs. Pulse Width
Tra
nsie
nt
Therm
al R
esis
tance :
Rth
[K/W
]
Pulse Width : PW [s]
0
50
100
150
200
250
300
0 50 100 150 200
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Ta = 25ºCSingle Pulse
0.1
1
10
100
1000
0.1 1 10 100 1000 10000
Operation in this area is limited by RDS(on)
PW = 100ms
PW = 1ms
PW = 10ms
PW = 100msTa = 25ºCSingle Pulse
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001 5/12
TSQ50211-SCT3040KL
14.Jun.2018 - Rev.005
Datasheet
SCT3040KL
lElectrical characteristic curves
Fig.4 Typical Output Characteristics(I) Fig.5 Typical Output Characteristics(II)
Fig.6 Tj = 150°C Typical Output
Characteristics(I)Fig.7 Tj = 150°C Typical Output
Characteristics(II)
Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V]
Dra
in C
urr
ent
: I D
[A]
Dra
in C
urr
ent
: I D
[A]
Dra
in C
urr
ent
: I D
[A]
Drain - Source Voltage : VDS [V]
Dra
in C
urr
ent
: I D
[A]
Drain - Source Voltage : VDS [V]
0
10
20
30
40
50
0 2 4 6 8 10
Ta = 25ºCPulsed
10V
VGS= 8V
12V
16V
20V
18V
14V
0
5
10
15
20
25
0 1 2 3 4 5
Ta = 25ºCPulsed
VGS= 8V
10V
14V
16V
18V
20V
12V
0
10
20
30
40
50
0 2 4 6 8 10
Ta = 150ºCPulsed
10V
VGS= 8V
18V
16V20V14V
12V
0
5
10
15
20
25
0 1 2 3 4 5
Ta = 150ºCPulsed
10V
VGS= 8V
18V
16V
14V
12V
20V
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001 6/12
TSQ50211-SCT3040KL
14.Jun.2018 - Rev.005
Datasheet
SCT3040KL
lElectrical characteristic curves
Fig.9 Typical Transfer Characteristics (II)Fig.8 Typical Transfer Characteristics (I)
Dra
in C
urr
ent
: I D
[A]
Dra
in C
urr
ent
: I D
[A]
Fig.10 Gate Threshold Voltagevs. Junction Temperature
Gate
Thre
shold
Voltage :
VG
S(t
h)[V
]
Junction Temperature : Tj [°C]
Fig.11 Transconductance vs. Drain Current
Tra
nsconducta
nce :
gfs
[S]
Drain Current : ID [A]
Gate - Source Voltage : VGS [V] Gate - Source Voltage : VGS [V]
0.1
1
10
0.1 1 10
VDS = 10VPulsed
Ta = 150ºCTa = 75ºCTa = 25ºC
Ta = -25ºC
0
1
2
3
4
5
6
-50 0 50 100 150 200
VDS = 10VID = 10mA
0.01
0.1
1
10
100
0 2 4 6 8 10 12 14 16 18 20
Ta= 150ºCTa= 75ºCTa= 25ºC
Ta= -25ºC
VDS = 10VPulsed
0
10
20
30
40
50
0 2 4 6 8 10 12 14 16 18 20
Ta= 150ºCTa= 75ºCTa= 25ºC
Ta= -25ºC
VDS = 10VPulsed
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001 7/12
TSQ50211-SCT3040KL
14.Jun.2018 - Rev.005
Datasheet
SCT3040KL
lElectrical characteristic curves
Fig.12 Static Drain - Source On - StateResistance vs. Gate Source Voltage
Sta
tic D
rain
-S
ourc
e O
n-S
tate
Resis
tance
: R
DS
(on)[W
]
Gate - Source Voltage : VGS [V]
Fig.13 Static Drain - Source On - StateResistance vs. Junction Temperature
Sta
tic D
rain
-S
ourc
e O
n-S
tate
Resis
tance
: R
DS
(on)[W
]
Junction Temperature : Tj [ºC]
Fig.14 Static Drain - Source On - StateResistance vs. Drain Current
Sta
tic D
rain
-S
ourc
e O
n-S
tate
Resis
tance
: R
DS
(on)[W
]
Drain Current : ID [A]
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
6 8 10 12 14 16 18 20 22
ID = 20A
ID = 37A
Ta = 25ºCPulsed
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
-50 0 50 100 150 200
VGS = 18V
Pulsed
ID = 37A
ID = 20A
0.01
0.1
1 10 100
VGS = 18VPulsed
Ta = 150ºCTa = 125ºCTa = 75ºCTa = 25ºC
Ta = -25ºC
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001 8/12
TSQ50211-SCT3040KL
14.Jun.2018 - Rev.005
Datasheet
SCT3040KL
lElectrical characteristic curves
0
10
20
30
40
0 200 400 600 800
Ta = 25ºC
Fig.15 Typical Capacitancevs. Drain - Source Voltage
Capacitance :
C [pF
]
Drain - Source Voltage : VDS [V]
Fig.17 Switching Characteristics
Sw
itchin
g T
ime : t [
ns]
Drain Current : ID [A]
Fig.18 Dynamic Input Characteristics
Total Gate Charge : Qg [nC]
Gate
-S
ourc
e V
oltage :
VG
S[V
]C
oss S
tore
d E
nerg
y : E
OS
S[m
J]
Fig.16 Coss Stored Energy
Drain - Source Voltage : VDS [V]
1
10
100
1000
10000
0.1 1 10 100 1000
Ciss
Coss
Crss
Ta = 25ºCf = 1MHzVGS = 0V
0
5
10
15
20
0 10 20 30 40 50 60 70 80 90 100110
Ta = 25ºCVDD = 600VID = 20APulsed
1
10
100
1000
10000
0.1 1 10 100
tf
td(on)
td(off)
Ta = 25ºCVDD = 400VVGS = 18V
RG = 0WPulsed
tr
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001 9/12
TSQ50211-SCT3040KL
14.Jun.2018 - Rev.005
Datasheet
SCT3040KL
lElectrical characteristic curves
0
200
400
600
800
1000
1200
1400
1600
1800
0 10 20 30 40 50 60
Ta = 25ºCVDD=600VVGS = 18V/0V
RG=0W
L=250mHEon
Eoff
0
50
100
150
200
250
300
350
400
450
500
200 400 600 800 1000
Ta = 25ºCID=20AVGS = 18V/0V
RG=0W
L=250mH Eon
Eoff
0
200
400
600
800
1000
1200
1400
1600
1800
0 5 10 15 20 25 30
Ta = 25ºCVDD=600VID=20AVGS = 18V/0V
L=250mH
Eon
Eoff
Fig.19 Typical Switching Lossvs. Drain - Source Voltage
Sw
itchin
g E
nerg
y : E
[mJ]
Drain - Source Voltage : VDS [V]
Fig.21 Typical Switching Loss
vs. External Gate Resistance
Sw
itchin
g E
nerg
y : E
[mJ]
External Gate Resistance : RG [W]
Sw
itchin
g E
nerg
y : E
[mJ]
Fig.20 Typical Switching Loss
vs. Drain Current
Drain Current : ID [A]
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001 10/12
TSQ50211-SCT3040KL
14.Jun.2018 - Rev.005
Datasheet
SCT3040KL
lElectrical characteristic curves
Fig.22 Inverse Diode Forward Currentvs. Source - Drain Voltage
Invers
e D
iode
Forw
ard
Curr
ent
: I S
[A]
Source - Drain Voltage : VSD [V]
Fig.23 Reverse Recovery Timevs.Inverse Diode Forward Current
Revers
e R
ecovery
Tim
e : t
rr[n
s]
Inverse Diode Forward Current : IS [A]
0.01
0.1
1
10
100
0 1 2 3 4 5 6 7 8
VGS = 0VPulsed
Ta = 150ºCTa = 75ºCTa = 25ºC
Ta = -25ºC
10
100
1000
1 10 100
Ta = 25ºCdi / dt = 1100A / usVR = 600VVGS = 0VPulsed
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001 11/12
TSQ50211-SCT3040KL
14.Jun.2018 - Rev.005
Datasheet
SCT3040KL
lMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform
Fig.3-1 Switching Energy Measurement Circuit Fig.3-2 Switching Waveforms
Fig.4-1 Reverse Recovery Time Measurement Circuit Fig.4-2 Reverse Recovery Waveform
D.U.T.
VsurgeIrr
Eon = ID×VDS Eoff = ID×VDS
ID
VDS
Same type device as
D.U.T.
D.U.T.
ID
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001 12/12
TSQ50211-SCT3040KL
14.Jun.2018 - Rev.005
Datasheet
R1102Swww.rohm.com© 2015 ROHM Co., Ltd. All rights reserved.
Notice
ROHM Customer Support System http://www.rohm.com/contact/
Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us.
N o t e s
The information contained herein is subject to change without notice.
Before you use our Products, please contact our sales representative and verify the latest specifica-tions :
Although ROHM is continuously working to improve product reliability and quality, semicon-ductors can break down and malfunction due to various factors.Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM.
Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production.
The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information.
The Products specified in this document are not designed to be radiation tolerant.
For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, and power transmission systems.
Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters.
ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein.
ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information.
Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations.
When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act.
This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM.
1)
2)
3)
4)
5)
6)
7)
8)
9)
10)
11)
12)
13)