SCREEN Equipment Manufacturer: Full participation within...

1 SE-77-0651-L1 SCREEN Semiconductor Solutions Co., Ltd.

SCREEN Equipment Manufacturer:Full participation within the SOI Consortium

June 1, 2017SCREEN Semiconductor Solutions Co., Ltd.

Agenda


1. SCREEN as a product line-up

2. SOI and Alternate Application solution: test case of Laser anneal

3. All about uniformity nm control and process contr ol

4. How to integrate SOI product solutions within our own tools

5. Conclusion

Why are equipment manufacturer interested in participating in the SOI Consortium?

Agenda






5. Conclusion


Worldwide WFE Ranking

SE-77-0651-L1 SCREEN Semiconductor Solutions Co., Ltd.4

WFE = Wafer Fab Equipment

Source: Gartner, April 2017'15-'16 Growth (%) in Top 10 Semiconductor Equipmen t Suppliers2015 2016 '15-'16 Growth

Revenue Revenue (%) In Dollars1 Screen Semiconductor Solutions 971.5 1,303.3 6 34.2%2 Applied Materials 6,420.2 8,102.0 1 26.2%3 Hitachi High-Technologies 788.3 969.5 7 23.0%4 Tokyo Electron 4,325.0 4,975.2 4 15.0%5 Nikon 724.2 822.7 8 13.6%6 ASML 4,701.6 5,061.1 3 7.6%7 Lam Research 4,808.3 5,170.2 2 7.5%8 KLA-Tencor 2,043.2 2,180.5 5 6.7%9 ASM International 582.5 544.3 9 -6.6%10 Hitachi Kokusai 633.8 530.5 10 -16.3%

Total Top 10 25,998.6 29,659.4 14.1%Others 5,484.5 4,373.8 -20.3%Total Market 31,483.1 34,033.2 8.1%

Data Source: The Information Network

Growth (%)Rank 2016

VendorRevenue

Rank 2016

� Top growth rate of tool sales between major SPE manufacturers

［CY2015→CY2016: +34.2% US$ basis）］

� Number 6 Worldwide Wafer Fab Equipment

CY2016Rank

CompanyCY2016

Revenue($M)CY2016

Share(%)

1 Applied Materials 7,737 20.7%2 Lam Research 5,213 13.9%3 ASML 5,091 13.6%4 Tokyo Electron 4,861 13.0%5 KLA-Tencor 2,406 6.4%6 Screen Semiconductor Solutions 1,375 3.7%7 Hitachi High-Technologies 980 2.6%8 Nikon 732 2.0%9 Hitachi Kokusai Electric 528 1.4%10 ASM International 497 1.3%11 Murata Machinery 493 1.3%12 Daifuku 472 1.3%13 Ebara 441 1.2%14 SEMES 434 1.2%15 Canon 392 1.0%16 Tokyo Seimitsu 305 0.8%17 NuFlare Technology 265 0.7%18 Ulvac 190 0.5%19 Nanometrics 184 0.5%20 Disco 178 0.5%

Others 4,634 12.4%Total Market 37,407 100.0%

Product Line-up


Ф100mm

Semiconductor Equipment Solutions

Single Wafer Cleaner

MeasurementSystem

Coat/Develop Track

Scrubber

Frontier Project for 200mm

Direct Imaging SystemWet Station

SU-3200

SU-3300

SS-3200

Ф300mm

SS-3100

SS-80EX

Ф300mm

Ф300mm

Ф300mm

Ф200mm

FC-821L

FC-3100

WS-820L/WS-620C

Ф200mm

Ф300mm

Ф300mm

Ф300mm

Ф200mm

RE-3100/3300 Series VM-2200/3200 Series

VM-1200/1300 Series

Ф150mm

Ф300mm

Ф100mm

Ф300mm

Ф100mm

Ф300mmФ200mm

Ф300mm

SU-2000

Ф200mm

CW-1500

Ф200mm

DW-3000

ZI-2000

Ф200mm

LA-3000-F

LA-830

LT-3000/3100

Ф200mm

Ф300mm

Ф300mmФ300mm

Ф50mm

Ф300mm

VM-1020/1030 Series

Ф200mm

DT-3000

Annealing System

600mm

DW-3000 for PLP

RF-310A

Wafer Cleaning System


SU-3200Single Wafer Cleaner

SS-3200

Scrubber

FC-3100

Wet Station

� Nano process capability for 28nm and lower� Provides throughput of up to 800 WPH� Downtime reduction & maintenance

capability improvement� Flexible tool/chamber system� ECO Friendly

Ф300mmФ300mm

Single Wafer Cleaner

SU-330024 chamber configuration

4 levels x 6 towers construction

APAC2 super clean technology

Nanodry7

Nano Control Nozzle

Nanocycle

Single chamber servicing

4 independent modules

� Installation of the latest cleaning toolsachieves high cleaning capacity

� Provides throughput of up to 800 WPH

� Same processing capacity as thehighly reliable and stable SS-3100

� Space-saving design

Ф300mmФ300mm

� Nano process capability for 45nm and lower

� Provides throughput of up to 650 WPH

� Short delivery time and fast setup

� Highly stable and reliable

� Flexible system configurations

Coat/Develop Track


� High-Throughput while Ensuring High Reliability

� Non-Stop Operation Delivers High Productivity

� Small Footprint & Flexible Configuration

� Advanced Lithography Technology

� Continuing the Reliability of the Long-Selling 60/80 Series

� Updated Control System for Easy Expandability

� Maintaining the Upward Compatibility of the 60/80 Series

� Flexibility to Process a Variety of Substrates

� Performance Leveraging Advanced Technology

� Simple hardware and software enable high reliability� High throughput designed for various process flows� Features the latest technology for today's cutting-edge,

finer pattern processing� Uses a modular design that is inherently flexible and

expandable. The adaptable equipment design makes it possible to deliver and assemble the RF3 quickly

Ф300mm

Ф300mm

Ф200mm80EX80EX80EX80EX SeriesSeriesSeriesSeries

Spray CoaterSpray CoaterSpray CoaterSpray Coater

DT-3000

RF-310A

Ф200mm

Annealing System


� Precise thermal budget control– Flexible shape pulse and energy control

•Ramp, Peak, Dwell, Soak timing and pulse height� Confined atomic diffusion control

– 0.1msec pulse width control > 1 nm junction depth control� High dopant activation and high heating rate� High cooling rate to minimize deactivation� Excellent Rs uniformity (no scan overlap)� Broad wavelength absorption to minimize pattern

effect� Supports many annealing applications as:

– Well, S/D Extension, Contact, S/D USJ, HK Nitridation, HK PDA, Metal Gate Anneal

� Ultra-Iow Thermal BudgetAchieving the highest possible temperature gradient insub-micro seconds, LT tools are able to anneal fragilesubstrates without damaging critical device structures.� Full Device Exposure

Annealing one die, a group of dies or only the desiredregion in a single shot, the LT makes it all possible byshaping the beam size to meet process and devicerequirements without stitching.� Dopant Activation Control

Obtaining unprecedented high line and parametric yieldlevels are only possible with the LT annealing process.By melt-annealing, the dopants are superactivated and the low resistance layer is defect free.

Ф300mm

Ф300mm

LA-3000-F

LT-3000/3100

Flash Lamp Annealer

Ф200mm

Laser Annealer

Measurement System


Ф300mm

VM-2200/3200 series

Spectroscopic Film Thickness Measurement System

The VM-2200/3200 series offers high throughput of up to 160 wafers per hour in high-speed mode (during five-point measurement of SiO2 wafers)

Ф100mm

SiC/Si Power Device

MEMS

SAW Device

Thin Wafer Transfer

Multi-function modell

Ф300mm

A desktop model that can be incorporated into production lines

Ф100mm

SiC/Si Power Device

MEMS

SAW Device

Thin Wafer Transfer

RE-3100/3300 series

Ellipsometric Film Thickness Measurement System

The ellipsometer is not affected by warping or bending of wafers, enabling highly accurate measurements

SiC/Si Power Device

MEMS

SAW Device

Thin Wafer Transfer

Ф300mmФ150mm

High-end model

VM-1200/1300 series


Desktop model Ф300mm

Microscope model that is ideal for R&D

Ф50mm

SiC/Si Power Device

MEMS

SAW Device

VM-1020/1030 series


Desktop model

Inspection System/Direct Imaging System


Can be used in a wide variety of processes from in-processinspections in the frontend wafer process,where flexibility is demanded, to final visual inspections,where speed is of the essence.

� World-leading 2.0µm high-resolution imaging

� Automatic image correction function for the optimum exposure

� The world’s fastest* “Quad Head Concept”

� Suitable for large substrates for FOPLP

� Equipped with Twin Drafting Head Utilizing Grating Light Valve (GLV™) and High-power YAG Lasers

� Handling of Warping and Non-linear Distortion Generated During Thinning and Attachment to Supporting Substrate

� Equipped with a Proprietary Optical System Designed for Thick Resist Processes

Ф300mm

ZI-2000

DW-3000

Wafer Pattern Inspection System

Ф75mm

High-speed, Superior Cost Performance

Ф200mm

Direct Imaging System for Advanced Packaging

Ideal for 3D Packaging,Bump, and Pillar Formation

DW-3000 for PLP

Direct Imaging System for Panel Level Packages

Direct Imaging Exposure Equipment for Panels, Featuring a Global State-of-the-Art 2.0 µm Resolution

600mm

Ф200mm

Agenda






5. Conclusion


Moving to 3D age…

12 SCREEN Semiconductor Solutions Co., Ltd.

From leti CoolCube Program

3rd dimension became a fundamental design freedom in Advance logic, memory, IOT …

Need for process solution capable of surface locali zed annealing without affecting buried structure

In Power Electronics, vertical device optimized the 3 rd dimension

since more than 10 years

Infineon IGBT evolution

SE-77-0651-L1

LASSE LTA – Step & Repeat Process

SCREEN Semiconductor Solutions Co., Ltd.13

LASSE LTA process– Wavelength 308nm– Pulse ~160ns– Up to 9J per pulse– Beam size up to 26x36mm2

♦ Ultra localized annealing♦ Large temperature annealing capability♦ Controllable melting process

SE-77-0651-L1

SCREEN Semiconductor Solutions Co., Ltd.14

LT-3100 for Monolithic 3D integration

P. Batude et al, VLSI 2011

♦ Ultra localized annealing on top layer:– Crystallization– Activation – Stress engineering

S. Kerdilès et al. in proceeding IWJT 2016

Ars

enic

junc

tion

Incr

easi

ng la

ser

ener

gy

SE-77-0651-L1

SCREEN Melt laser simulation development


Simulating thermal, phases, diffusion dynamics during laser annealing

� Fully-owned Standalone software� Native 3D� Collaborating and developing

with top academic experts� Customer oriented� Optimized for LT technology

Laser integration supported byLASSE Innovation Booster

SE-77-0651-L1

Monolithic 3D integration of MEMS/NEMS


Enable high temperature top layer annealing with BEOL temperature limitation (top layer bonded SOI or deposited) :

– Stress Engineering

– Activation

– Mechanical properties engineeringPressor Sensor (IWJT 2014)

Planar Light Valve (PLV)

LETI application a-Si to poly-Si Crystallization for

resonator formation gas detectors

SE-77-0651-L1

Laser annealing for thin wafer Power Devices


♦ Need localize annealing for backside processing♦ Need melting process for defect free junction/conta ct♦ Need large temperature to integrate SiC substrate

Backside processing• Junction formation • Contact formation

SE-77-0651-L1

Laser annealing for thin wafer Power Devices


Implanted Si

Ni deposited on thinned SiC

After melting laser annealing

Contact formed after laser annealing

♦ Backside activation in Si IGBT (>1000 °C)

♦ Backside contact formation in emerging SiC market

Melting Laser

Melting Laser

T., Toshiyuki, et al. "UV Excimer Laser Annealing for Next Generation Power Electronics." IIT, 2016

SE-77-0651-L1

Monolithic 3D integration of BSI CIS


♦ Enable high temperature for imagers (BSI-CIS ensuring) monolithically formed on CMOS technology– “EPI-like” recrystallization – High Activation Rate with Melt Process– No Damage to burried structure

SE-77-0651-L1

Agenda




3. All about uniformity nm control and process contr ol– Particle control

- Process chamber technology- Physical cleaning

– Etch uniformity control– Wafer drying technology– Customer acknowledgement: FDSOI HVM Enabled Atomic-Scale Uniformity


5. Conclusion

Why are equipment manufacturer interested in partic ipating in the SOI Consortium?

Particle control - Process chamber technology

� APAC (Advanced Process Atmosphere Control) technology

Air-protect tech. for fine Drying process Small Chamber for quick

refresh of the air

Cup-window-velocity is

boosted by the ASB.

Uniformed

Exhaust for all

Chem. Ports

Clean process area can be maintained by ASP.


Optimized Air-flow in

Chamber

Particle control - Physical cleaning

2000 2005 2010 2015~

Technology node (nm) 65 4590

Softspray

Nanospray

Nanospray2

130180 20/16 10

NanosprayÅ

Dual fluid (Liquid & N2)• Softspray: Inside mixing• Nanospray/Nanospray2: Outside mixing

Furtherupgraded

NanosprayÅ2

Furtherupgraded

NanosprayÅ2

Well-controlleddroplet New concept

of physical clean

New concept of physical

clean


Etch uniformity control - Nano control


♦ Nano control features

Center / middle High Pattern

� Special etching curve� Improved profile

No.1

32

4Heating System

1. Individual nozzle temperature control

2. Individual nozzle flow control

3. Adjustable dispense point

� Less chemical consumption

� Superior uniformity

� Unique etching curves

Wafer drying technology

12 14 16 18 20 2210

1Xnm

(FG)

1Ynm

(FG/CT)

1Znm

(13~10nm,

CT)

Nanodry1

Nanodry2SMT

NanodryÅ

1Ynm

(16~14nm)

1Xnm

(19~17nm)

2Znm

NAND(2D)

DRAM

Line AR of STI

Generation

CMOSFin

10nm

7nm

5nm

2Xnm

(FG)

2Ynm

6 8

IPA dry

In case of STI

24

NanodryÅ+SMT

14nm

New technology

Nanodry1 plus

Improved



Customer acknowledgement

FDSOI HVM Enabled Atomic-Scale Uniformity

▶▶▶▶ 28nm node FDSOI products thickness uniformity < ±±±±5 Å in HVM

▶▶▶▶ Using SCREEN’s leading edge HVM Single Wafer Clean technology

▶▶▶▶ JDP continues on advanced FDSOI products for 14nm/1 0nm node

+5 Å

-5 Å

Target

Soitec FD-2D wafer

Silicon lattice: 5.43 Å

SS-3100

SU-3200

Agenda






5. Conclusion


Era of Advanced Learning and Cognitive Manufacturin g

27

♦ Creating a Virtuous Cycle – From Process Equipment which enables manufacturing of

Advanced Electronics (IoT) including SOI technology . . .– To utilizing Advanced Electronics to enhance the features

and capabilities of Process Equipment.

Process Tool Suppliers

Device Manufacturers

System Level Products

End-Users

Advanced Electronics (IoT, SmartSensors,

Multifunction modules)

Process EquipmentSOI-based

Devices

SE-77-0651-L1 SCREEN Semiconductor Solutions Co., Ltd.

What Does this Enable?

28

♦ Combining SOI-based Advanced Electronics with Cloud Computing and Big Data– Embedded Smart systems on Process Equipment– Interfaced to Factory Management System– Algorithms (expert systems, model-based, etc.) to

• Extract knowledge from data, and • Take action (intervene automatically, adjust process within limits,

or notification with recommendation)

♦ New Capability to Enhance Manufacturing Effectivene ss– Real-time Data Collection and Monitoring of Process variables

on-tool– Advanced Fault Detection and Classification– Adaptive Process Control– Preventive Predictive Maintenance– Process results matching across

• Many chambers per tool• Tool to Tool in large fab installed base


Benefits

29

♦ Product Consistency and Control– Process results are maintained within tighter tolerances

• Run to run of same device type• Device to Device on a common process flow

– Achieve higher Yields♦ Better Utilization of Fixed Assets

– Reduce downtime– Streamline maintenance cycles– Advanced warning of impending failure

• Schedule intervention instead of reacting to unplanned tool-down• Insure replacement part stocking and availability of resources to

address• Eliminate jeopardizing product from failure in mid-process run

♦ Continuous Improvement of Best Known Methods– Root cause analysis– Training algorithms for better proactive detection of Process shifts– Development of most effective Corrective Action Plans


Agenda






5. Conclusion




1. We need to understand the specific challenges for SOI technology

2. What are the key differentiating needs within the SOI ecosystem

3. FDSOI of course but also RFSOI, …

4. Let’s discuss how we could impact and support!

Conclusion

SCREEN Equipment Manufacturer: Full participation within...

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