Run IIB Silicon workshop

January 22, 2003 1

Run IIB Silicon Run IIB Silicon workshopworkshop Purdue University

Bortoletto Daniela, Bolla Gino, Canepa Anadi

Hamamatsu testingI-V characteristics up to 1000V

Depletion Voltage

Coupling Capacitance short at 100V

Leaky strip Polysilicon Resistor

Sensors received at Purdue:SWA 61457 60

SWA 61457 61

SWA 61457 63

SWA 61457 69

January 22, 2003 2

Run IIB Silicon Run IIB Silicon workshopworkshop

Purdue Testing results at www.physics.purdue.edu/cdf/Run2B/pres

sensor characterization I-V characteristics up to 1000V

Depletion Voltage

Coupling Capacitance & Oxide Leakage Current

Polysilicon Resistor

Interstrip Capacitance

Radiation Hardness Testsensor SWA61457 60

sensor SWA61457 63

sensor SWA61457 69

have been irradiated at U.C.Davies Irradiation Facility on Sept 27th 2002

fluence = 1.4 1014 1MeV eq-n cm-2

fully characterizated

January 22, 2003 3

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Sensor 61I (V=150) =120nA

hamamatsu I(150V)=71 nA

Sensor 60I (120V) =62.6nA

hamamatsu I(120V)=77.3nA

Sensor 69I (140V) =76.8nA


Sensor 63I (V=140)=71nA


Before Irradiation Leakage Current vs Bias Voltage @ T = 20C

1.0E-08

1.0E-07

1.0E-06

1.0E-05

0 200 400 600 800 1000

Bias Voltage

Lea

kag

e C

urr

ent

(A)

Sensor 60

Sensor 63

Sensor 69 Sensor 61

January 22, 2003 4


Before Irradiation Stability measurement SWA 61457sensor 0061

1.0E-08

1.0E-07

1.0E-06

1.0E-05

0 100 200 300 400 500 600 700 800 900 1000

Bias Voltage (V)

Leak

age

Cur

rent

(A)

1 t=0 2 t=30min

3 t=1h 4 t=1h30min

5 t=2h 6 t=2h30min

7 t=3h 8 t=3h30min

9 t=4h 10 t=0min

11 t=30min 12 t=1h

13 t=1h30min 14 t=2h

Measurement repeated every 30 minsensor biased at Vbias=200V except when tested

Sensor stabilizes in time

January 22, 2003 5


Neutron irradiation fluence

1.4 1014 1MeV n-eq cm^-2

Layer 0Operating temperature

T = -5C (TDR 3-16)

Leakage current per strip moduleIstrip(V > Vd) 95 nA

After Irradiation Leakage Current vs Bias Voltage environmental chamber T = - 25C

1.0E-05

1.0E-04

1.0E-03

1.0E-02

0 100 200 300 400 500 600 700 800 900 1000

Bias Voltage

Leak

age

Cur

rent

(A)

Sensor 60 T = - 25C

Sensor 60 expected @T= - 5 C

Sensor 60 T = 20C

January 22, 2003 6

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Annealing procedure 4min @ T=80C sensor 69

Both sensor 60 and sensor 69I(plateau) 50A (T = -25C)sensor 60: 1400 min T=20Csensor 69: 800 minT = 20C & annealing

Assuming=410-17 A/cmI(Vdep) 7mA

Measured valueI(Vdep) 5.5mA

Estimated Fluence =1.1 1014 1MeV n-eq

After Irradiation Leakage Current vs Bias Voltage environmental chamber T = - 25C

1.0E-05

1.0E-04

1.0E-03

1.0E-02

0 200 400 600 800 1000

Bias Voltage

Lea

kag

e C

urr

ent

(A)

Sensor 69 T = - 25C AFTER Ann

Sensor 69 expected T= 20C AFTER Ann

Sensor 69 T = 20C BEFORE Ann

Set-up problem

January 22, 2003 7


After Irradiation Leakage Current vs Bias Voltagedata are normalized to T=20C

1.0E-04

1.0E-03

1.0E-02

1.0E-01

0 100 200 300 400 500 600 700 800 900 1000

Bias Voltage

Le

ak

ag

e C

urr

en

t (A

)

sensor 60

sensor 63

sensor 69

Sensor at T=-7C except when testing a) Room T-sensor 60 1700min-sensor 63 1200 min-sensor 69 2800 minb) annealing sensor 69c) measurements takenone month later thanprevious slide

Leakage current decreases

in time

NO breakdownobserved

January 22, 2003 8


After irradiation Leakage Current vs time SWA 6145760

environmental T = - 25C & Vbias = 300V

5.0E-05

5.1E-05

5.1E-05

5.2E-05

5.2E-05

5.3E-05

5.3E-05

5.4E-05

5.4E-05

0 10 20 30 40 50 60 70 80

time (min)

Le

ak

ag

e C

urr

en

t (A

)Sensor is biased at Vbias=300V

No instabilityis observed

January 22, 2003 9


Before Irradiation Bulk Capacitance vs Bias Voltage @ T = 20C & f = 10kHz, AC signal = 1V

0.0E+00

1.0E+17

2.0E+17

3.0E+17

4.0E+17

5.0E+17

6.0E+17

7.0E+17

0 20 40 60 80 100 120 140 160 180 200

Bias Voltage

1/C

^2 (1

/F2 )

Sensor 60Vdep=117 V

hamamatsu Vdep=140VSensor 61

Vdep=141 V hamamatsu Vdep=160V

Sensor 63Vdep=133 V

hamamatsu Vdep=160V

Sensor 69Vdep=132 V

hamamatsu Vdep=150V

Hamamatsu values are higher than Purdue

measurements

January 22, 2003 10

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Version 1/14.12/2000Vd (20C)=Vd(T)*1.0526/[1+A·exp(T/)]

A=0.00936 = 11.58 Vd(f)=Vd(1kHz)[1-D·log(f/1kHz)]

D=0.11+/-0.009

After irradiation Sensor 60

T=-25C,f=1kHzVdep=137 V

T=20C,f=10kHzVdep=128 V

After Irradiation Bulk Capacitance vs Bias Voltage NOT Annealed sensor

f = 1kHz & AC Voltage =1V @ T = -25C

0.0E+00

1.0E+17

2.0E+17

3.0E+17

4.0E+17

5.0E+17

6.0E+17

7.0E+17

8.0E+17

9.0E+17

1.0E+18

0 50 100 150 200 250

Bias Voltage (V)

1/C

^2 (1

/F^2

)

January 22, 2003 11

Run IIB SiliconRun IIB Silicon workshopworkshopAfter Irradiation Bulk Capacitance vs Bias

Voltage sensor 69

0.0E+001.0E+172.0E+173.0E+174.0E+175.0E+176.0E+177.0E+178.0E+179.0E+171.0E+181.1E+18

0 100 200 300 400

Bias Voltage (V)

1/C

^2

(1/F

^2)

After irradiation & after annealing

Sensor 69 to be understood

After irradiation Sensor 69

T=20C,f=100kHz:Vdep=136 V

T=20C,f=10kHz:Vdep =119 V

January 22, 2003 12


After Irradiation & after annealing Bulk Capacitance vs Bias Voltage sensor 69 T=4C f=1kHz & VAC=1V

0.0E+00

1.0E+17

2.0E+17

3.0E+17

4.0E+17

5.0E+17

0 50 100 150 200 250 300 350 400

Bias Voltage

Bu

lk c

apac

itan

ce (1

/F^2

)

After irradiation & after annealingSensor 69

T=4C,f=1kHz:

Vdep=197 V

T=20C,f=10kHz:Vdep =176 V

measurement performed after 4 months

(2800 min at room T)

January 22, 2003 13


Before Irradiation Coupling Capacitance vs strip #

0.0E+00

1.0E-11

2.0E-11

3.0E-11

4.0E-11

5.0E-11

6.0E-11

7.0E-11

8.0E-11

9.0E-11

1.0E-10

1.1E-10

1.2E-10

1.3E-10

1.4E-10

-250 -150 -50 50 150 250

strip # (from D250 to U250)

Co

up

lin

g C

ap

ac

ita

nc

e (

F)

Sensor 60 f=100Hz Sensor 60 f=1kHz Sensor 60 f=10kHz Sensor 63 f=100kHz Sensor 63 f=0kHz Sensor 63 f=10kHz Sensor 69 f=100Hz Sensor 69 f=1kHz Sensor 69 f=10kHz

At f=100Hz

Sensor 60Coupling CapacitanceCC= 134.43+/-0.48pF



Open in the metal ?No evidence after visual inspection

January 22, 2003 14


After Irradiation Coupling Capacitance vs strip #

0.0E+001.0E-112.0E-113.0E-114.0E-115.0E-116.0E-117.0E-118.0E-119.0E-111.0E-101.1E-101.2E-101.3E-101.4E-101.5E-10

-250 -150 -50 50 150 250


Co

up

ling

Cap

acita

nce

(F

)

Sensor 60 f=100Hz

Sensor 69 f=100Hz



January 22, 2003 15


Before Irradiation Interstrip Capacitance vs strip # f =1MHz & AC Voltage = 1V

0.0E+00

1.0E-12

2.0E-12

3.0E-12

4.0E-12

-250 -150 -50 50 150 250


Inte

rstr

ip C

apac

itan

ce (

F)

Sensor 60

Sensor 63

Sensor 69

Sensor 60Interstrip CapacitanceCint= 3.46+/-1.68pF



Trend to be understood ?Cint vs bias voltage as expected

January 22, 2003 16

Run IIB SiliconRun IIB Silicon workshopworkshopSensor 63

Interstrip CapacitanceCint= 3.39+/-0.07pF


After Irradiation Interstrip Capacitance vs strip # f =1MHz & AC Voltage = 1V at Vbias>400V

0.0E+00

1.0E-12

2.0E-12

3.0E-12

4.0E-12

-250 -200 -150 -100 -50 0 50 100 150 200 250


Inte

rstr

ip C

ap

ac

ita

nc

e (

F)

Sensor 63

Sensor 69

No trend is observed

high bias voltage

January 22, 2003 17


Interstrip Capacitance vs bias Voltage f =1MHz

0.0E+00

1.0E-12

2.0E-12

3.0E-12

4.0E-12

5.0E-12

6.0E-12

7.0E-12

8.0E-12

9.0E-12

1.0E-11

0 100 200 300 400 500 600 700

Bias Voltage (V)

Inte

rstr

ip C

ap

ac

ita

nc

e (

F)

61 Before IRR Room T AC=1V

63 After IRR T = 12C AC=5V

69 After IRR&ANN Room T AC=5V

69 After IRR&ANN T= -25C AC=1V

Cint vs bias voltagein the region at irregular behavior

before irradiation

Three different set-up1. Chuck room T2. Cold chuck T=12C3. Environmental chamber T=-25C

Oxigen-vacancy

generation?

January 22, 2003 18


After irradiation Interstrip Capacitance vs Bias Voltage

T=14C f=1MHz & AC signal = 5V

3.0E-12

3.5E-12

4.0E-12

4.5E-12

5.0E-12

5.5E-12

6.0E-12

6.5E-12

7.0E-12

0 100 200 300 400 500 600 700 800 900 1000

Bias Voltage (V)

Inte

rstr

ip c

ap

ac

ita

nc

e (

F)

sensor 63 U250

sensor 63 D120

sensor 60 U256

After IrradiationDepletion Voltage sensor 63 V = 130Vsensor 60 V = 128V

Before Irradiation sensor 63 Cint = 3.17 +/- 0.01 pF sensor 60 Cint = 3.46 +/- 0.17 pF

After Irradiation sensor 63 3.3 pFsensor 60 3.4 pF

Surface charge decays in timeMeasurements one month later

than results shown in previous slide

January 22, 2003 19


Bias Resistance vs strip # Vbias >> Vdep

0.0E+00

1.0E+06

2.0E+06

-250 -150 -50 50 150 250


Bia

s R

eist

ance

(O

hm

)

sensor 60 before

sensor 63 before

sensor 69 before

sensor 63 after

sensor 69 after

Before Irradiation Sensor 60

R=1.72 +/- 0.2 MOhmSensor 63

R=1.84 +/- 0.8 Mohmdrop due to positive

charge trapped inside SiO2

After Irradiation Sensor 63

R=1.64 +/- 0.04 MOhmSensor 63

R=1.7 +/- 0.8 Mohmpositive charge

decaydue to

thermal annealingtunnel annealing

January 22, 2003 20


Bias Resistance vs Bias Voltagesensor 63 (sample strip U190)

0.0E+00

1.0E+06

2.0E+06

0 200 400 600 800Bias Voltage (V)

Bia

s R

esis

tan

ce (

Oh

m)

Before Irradiation

After Irradiation

Before Irradiation R=1.86 MOhm

After IrradiationR=1.71 Mohm

measurements affected

by high leakage current

January 22, 2003 21

Run IIB SiliconRun IIB Silicon workshopworkshopConclusions

We have evaluated the performance of Axial Outer Layer: sensors fulfill the specifications:

1.Leakage Current as Small as expected2.Bad channel Not found 3.Capacitance Values as Expected4.Bias Resistor as Expected5.Full Depletion Voltage after Irradiation as Expected

sensor appear easy to charge upbias resistance is affected by positive charge trappped inside SiO2 before irradiation; the effect decreases after irradiation due to positive charge decay (thermal annealing; tunnel annealing)interstrip capacitance is affected by dioxide defects generated during irradiation; these defects decay in timeHamamatsu sensors are radiation hard up to =1.4*1014 1MeV

eq-n cm-2

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