RGTV60TS65D :...

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DatasheetRGTV60TS65D 650V 30A Field Stop Trench IGBT

*1 Pulse width limited by Tjmax.

A

Diode Forward CurrentTC = 25°C IF 56 A

TC = 100°C IF 30 A

Operating Junction Temperature Tj 40 to +175 °C

Storage Temperature Tstg 55 to +175 °C

Power DissipationTC = 25°C PD 194 W

TC = 100°C PD 97 W

Diode Pulsed Forward Current IFP*1 120 A

Collector CurrentTC = 25°C IC 60 A

TC = 100°C IC 30 A

Pulsed Collector Current ICP*1 120

Collector - Emitter Voltage VCES 650 V

Gate - Emitter Voltage VGES 30 V

Absolute Maximum Ratings (at TC = 25°C unless otherwise specified)

Parameter Symbol Value Unit

Packing Code C11

PFC Marking RGTV60TS65D

IH

Packaging Specifications

Type

Packaging TubeApplications

Reel Size (mm) -Solar Inverter

Tape Width (mm) -UPS

Basic Ordering Unit (pcs) 450Welding

1) Low Collector - Emitter Saturation Voltage

2) High Speed Switching & Low Switching Loss

3) Short Circuit Withstand Time 2μs

4) Built in Very Fast & Soft Recovery FRD

5) Pb - free Lead Plating ; RoHS Compliant

Features Inner Circuit

Outline

VCES 650V TO-247N

IC(100°C) 30A

VCE(sat) (Typ.) 1.5V

PD 194W (1)(2)(3)

(1) Gate(2) Collector(3) Emitter

*1

*1 Built in FRD

(1)

(2)

(3)

1/11 2017.05 - Rev.A


DatasheetRGTV60TS65D

Thermal Resistance

IGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)

nA±200

μA

Thermal Resistance IGBT Junction - Case Rθ(j-c) - - 0.77 °C/W

Gate - Emitter Leakage Current IGES VGE = 30V, VCE = 0V - -

Parameter Symbol

7.0 V

VTj = 25°C - 1.5 1.9

Tj = 175°C - 1.85 -

Collector - Emitter SaturationVoltage

VCE(sat)

IC = 30A, VGE = 15V

Gate - Emitter ThresholdVoltage

VGE(th) VCE = 5V, IC = 21.0mA 5.0 6.0

ConditionsValues

Collector Cut - off Current ICES

Collector - Emitter BreakdownVoltage

BVCES IC = 10μA, VGE = 0V 650 - -

10--VCE = 650V, VGE = 0V

UnitMin. Typ. Max.

V

°C/WThermal Resistance Diode Junction - Case Rθ(j-c) - - 1.17

Parameter SymbolValues

UnitMin. Typ. Max.

2/11 2017.05 - Rev.A




VGE = 15V μs

VCC ≦ 360V

Tj = 25°C

Short Circuit Withstand Time tsc 2 - -

Turn - off Delay Time

mJTurn - off Switching Loss Eoff reverse recovery - 0.50 -

Turn - on Switching Loss Eon *Eon includes diode - 0.63 -mJ

Turn - off Switching Loss Eoff reverse recovery - 0.72 -

td(off) Tj = 175°C

Turn - on Delay Time

-

Reverse Bias Safe Operating Area RBSOA

IC = 120A, VCC = 520V

FULL SQUARE -VP = 650V, VGE = 15V

RG = 100Ω, Tj = 175°C

- 121 -

Fall Time tf Inductive Load - 80 -

nsRise Time tr VGE = 15V, RG = 10Ω - 13 -

IC = 30A, VCC = 400V - 32 -

Turn - on Switching Loss Eon *Eon includes diode - 0.57 -

td(on)

nsRise Time tr VGE = 15V, RG = 10Ω - 12 -

Turn - off Delay Time td(off) Tj = 25°C

Turn - on Delay Time td(on) IC = 30A, VCC = 400V - 33 -

- 105 -

Fall Time tf Inductive Load - 40

nCGate - Emitter Charge Qge IC = 30A - 14 -

Gate - Collector Charge Qgc VGE = 15V - 24 -

- 30 -

Total Gate Charge Qg VCE = 400V - 64 -

Parameter Symbol ConditionsValues

UnitMin. Typ. Max.

pFOutput Capacitance Coes VGE = 0V - 74 -

Reverse Transfer Capacitance Cres f = 1MHz

Input Capacitance Cies VCE = 30V - 1730 -

3/11 2017.05 - Rev.A




μCTj = 25°C

Diode Peak Reverse RecoveryCurrent

IrrIF = 30A

- 10.4 - A

Diode Reverse RecoveryCharge

Qrr - 0.42 -

μJ

μCTj = 175°C

Diode Reverse Recovery Energy Err - 62.5 - μJ

Diode Reverse RecoveryCharge

Qrr - 0.95 -

- ns

Diode Reverse Recovery Energy Err - 19.3 -

Diode Reverse Recovery Time trr - 155

ns

Diode Peak Reverse RecoveryCurrent

IrrIF = 30A

- 8.1 - A

Diode Reverse Recovery Time trr - 95 -

VCC = 400V

VTj = 25°C - 1.45 1.9

Tj = 175°C - 1.55 -

ValuesUnit

Min. Typ. Max.

diF/dt = 200A/μs

VCC = 400V

diF/dt = 200A/μs

Parameter Symbol Conditions

Diode Forward Voltage VF

IF = 30A

4/11 2017.05 - Rev.A



Electrical Characteristic Curves

　

Fig.2 Collector Current vs. Case Temperature

Col

lect

or C

urre

nt :

I C[A

]

Case Temperature : Tc [ºC]

Fig.3 Forward Bias Safe Operating Area

Col

lect

or C

urre

nt :

I C[A

]

Collector To Emitter Voltage : VCE[V]

Fig.4 Reverse Bias Safe Operating Area

Col

lect

or C

urre

nt :

I C[A

]


Fig.1 Power Dissipation vs. Case Temperature

Pow

er D

issi

patio

n : P

D[W

]

Case Temperature : Tc [ºC]

0

20

40

60

80

100

120

140

160

180

200

220

0 25 50 75 100 125 150 175

0

20

40

60

80

100

120

140

160

0 200 400 600 800

Tj≦175ºCVGE=15V

0

10

20

30

40

50

60

70

0 25 50 75 100 125 150 175

Tj≦175ºCVGE≧15V

0.01

0.1

1

10

100

1000

1 10 100 1000

TC= 25ºCSingle Pulse

10µs

100µs

5/11 2017.05 - Rev.A




Fig.5 Typical Output Characteristics

Col

lect

or C

urre

nt :

I C[A

]


Fig.6 Typical Output Characteristics

Col

lect

or C

urre

nt :

I C[A

]


Fig.7 Typical Transfer Characteristics

Col

lect

or C

urre

nt :

I C[A

]

Gate To Emitter Voltage : VGE [V]

Fig.8 Typical Collector To Emitter Saturation Voltagevs. Junction Temperature

Col

lect

or T

o E

mitt

er S

atur

atio

n V

olta

ge: V

CE

(sat

)[V

]

Junction Temperature : Tj [ºC]

0

20

40

60

80

100

120

0 1 2 3 4 5

Tj= 175ºC

VGE= 20V

VGE= 10V

VGE= 8V

VGE= 15V

VGE= 12V

0

20

40

60

80

100

120

0 1 2 3 4 5

Tj= 25ºC

VGE= 20VVGE= 12V

VGE= 10V

VGE= 8V

VGE= 15V

0

10

20

30

40

50

60

0 2 4 6 8 10 12

VCE= 10V

Tj= 25ºCTj= 175ºC

0

1

2

3

4

25 50 75 100 125 150 175

IC= 60A

IC= 15A

IC= 30A

VGE= 15V

6/11 2017.05 - Rev.A




Col

lect

or T

o E

mitt

er S

atur

atio

n V

olta

ge: V

CE

(sat

)[V

]


Col

lect

or T

o E

mitt

er S

atur

atio

n V

olta

ge: V

CE

(sat

)[V

]


Sw

itchi

ng T

ime

[ns]

Collector Current : IC [A]

Fig.12 Typical Switching Time vs. Gate Resistance

Sw

itchi

ng T

ime

[ns]

Gate Resistance : RG [Ω]

Fig.9 Typical Collector To Emitter Saturation Voltagevs. Gate To Emitter Voltage

Fig.10 Typical Collector To Emitter Saturation Voltagevs. Gate To Emitter Voltage

Fig.11 Typical Switching Time vs. Collector Current

0

5

10

15

20

5 10 15 20

Tj= 25ºC

IC= 60A

IC= 15A

IC= 30A

0

5

10

15

20

5 10 15 20

Tj= 175ºC

IC= 60A

IC= 15A

IC= 30A

1

10

100

1000

0 10 20 30 40 50 60

tf

VCC=400V, VGE=15VRG=10Ω, Tj=175ºC

Inductive ｌoad

td(off)

td(on)

tr

1

10

100

1000

0 10 20 30 40 50

tf

td(off)

VCC=400V, IC=30AVGE=15V, Tj=175ºC

Inductive ｌoad

td(on)

tr

7/11 2017.05 - Rev.A




Fig.13 Typical Switching Energy Losses vs. Collector Current

Sw

itchi

ng E

nerg

y Lo

sses

[mJ]

Collector Current : IC [A]

Fig.14 Typical Switching Energy Losses vs. Gate Resistance

Sw

itchi

ng E

nerg

y Lo

sses

[mJ]

Gate Resistance : RG [Ω]

Fig.15 Typical Capacitance vs. Collector To Emitter Voltage

Cap

acita

nce

[pF

]


Fig.16 Typical Gate Charge

Gat

e T

o E

mitt

er V

olta

ge :

VG

E[V

]

Gate Charge : Qg [nC]

0.01

0.1

1

10

0 10 20 30 40 50 60

Eoff

VCC=400V, VGE=15VRG=10Ω, Tj=175ºC

Inductive ｌoad

Eon

1

10

100

1000

10000

0.01 0.1 1 10 100

Cies

f=1MHzVGE=0VTj=25ºC

Coes

Cres

0.01

0.1

1

10

0 10 20 30 40 50

Eoff

Eon

VCC=400V, IC=30AVGE=15V, Tj=175ºC

Inductive ｌoad

0

5

10

15

0 10 20 30 40 50 60 70

VCC=400VIC=30ATj=25ºC

8/11 2017.05 - Rev.A




Fig.17 Typical Diode Forward Current vs. Forward Voltage

For

war

d C

urre

nt :

I F[A

]

Forward Voltage : VF[V]

Fig.18 Typical Diode Reverse Recovery Timevs. Forward Current

Rev

erse

Rec

over

y T

ime

: trr

[ns]

Forward Current : IF [A]

Fig.19 Typical Diode Reverse Recovery Currentvs. Forward Current

Rev

erse

Rec

over

y C

urre

nt :

Irr

[A]


Fig.20 Typical Diode Reverse Recovery Chargevs. Forward Current

Rev

erse

Rec

over

y C

harg

e : Q

rr[µ

C]


0

20

40

60

80

100

120

0 0.5 1 1.5 2 2.5 3

Tj= 175ºC

Tj= 25ºC

0

100

200

300

400

0 10 20 30 40 50 60

VCC=400VdiF/dt=200A/µsInductive ｌoad

Tj= 175ºC

Tj= 25ºC

0

5

10

15

20

0 10 20 30 40 50 60

Tj= 175ºC

Tj= 25ºCVCC=400V

diF/dt=200A/µsInductive ｌoad

0

0.5

1

1.5

2

2.5

0 10 20 30 40 50 60

VCC=400VdiF/dt=200A/µsInductive ｌoad

Tj= 175ºC

Tj= 25ºC

9/11 2017.05 - Rev.A




0.001

0.01

0.1

1

1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0

D= 0.50.20.1

0.010.02

0.05

Single Pulse

0.001

0.01

0.1

1

1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0

D= 0.50.20.1

0.010.02

0.05

Single Pulse

t1

t2

PDM

Duty=t1/t2Peak Tj=PDM×ZthJC+TC

t1

t2

PDM

Duty=t1/t2Peak Tj=PDM×ZthJC+TC

Tra

nsie

nt T

herm

al Im

peda

nce

: Zth

JC[º

C/W

]

Pulse Width : t1[s]

Tra

nsie

nt T

herm

al Im

peda

nce

: Zth

JC[º

C/W

]

Pulse Width : t1[s]

Fig.21 Typical IGBT Transient Thermal Impedance

Fig.22 Typical Diode Transient Thermal Impedance

C1 C2 C3 R1 R2 R3557.2u 1.609m 537.6m 194.6m 283.3m 2.100m

C1 C2 C3 R1 R2 R3356.0u 1.250m 6.974m 172.8m 273.3m 273.9m

10/11 2017.05 - Rev.A



Inductive Load Switching Circuit and Waveform

VG

D.U.T.

D.U.T.

Fig.23 Inductive Load Circuit

IF

diF/dt

Irr

trr , Qrr

Fig.25 Diode Reverce Recovery Waveform Fig.24 Inductive Load Waveform

tr

toff

10%

90%

tftd(on)td(off)

Gate Drive Time

VCE(sat)

10

90%

ton

VGE

IC

VCE

Eon

10

Eoff

11/11 2017.05 - Rev.A

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