Review of IEDM 2010 Conference - American Vacuum Society · Review of IEDM 2010 Conference Susan...
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Review of IEDM 2010 Conference Susan Felch February 2, 2011 Ion Beam Services Rue Gaston Imbert prolongée ZI Peynier Rousset 13790 PEYNIER France Ph : +33 4 42 53 89 53 Fx : +33 4 42 53 89 59 www.ion-beam-services.com [email protected]
Transcript of Review of IEDM 2010 Conference - American Vacuum Society · Review of IEDM 2010 Conference Susan...
Review of IEDM 2010Conference
Susan Felch
February 2, 2011
Ion Beam ServicesRue Gaston Imbert prolongéeZI Peynier Rousset13790 PEYNIERFrance
Ph : +33 4 42 53 89 53Fx : +33 4 42 53 89 [email protected]
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From The Future Si Technology Perspective:Challenges and Opportunities, Dr. Kinam Kim,Samsung
Key technologies for the future Si CMOS era
Example of vertical NAND structures
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Non-Planar, Multi-Gate InGaAs Quantum Well Field Effect Transistorswith High-K Gate Dielectric and Ultra-Scaled Gate-to-Drain/Gate-to-Source Separation for Low Power Logic Applications, Intel
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Self-aligned III-V MOSFETs heterointegrated on a 200 mm Sisubstrate using an industry standard process flow, Sematech
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Self-aligned metal Source/Drain InxGa1-xAs n-MOSFETs using Ni-InGaAs alloy, University of Tokyo
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Physical Origin of pFET Threshold Voltage Modulationby Ge Channel Ion Implantation (GC-I/I), Toshiba &IBM
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Work-function Engineering in Gate First Technologyfor Multi-VT Dual-Gate FDSOI CMOS on UTBOX, CEA-LETI & STMicroelectronics
Ground plane implants are In+
and As+
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Novel Stress-Memorization-Technology (SMT) for HighElectron Mobility Enhancement of Gate Last High-k/Metal Gate Devices, Samsung
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Contact Resistance Reduction to FinFET Source/DrainUsing Dielectric Dipole Mitigated Schottky BarrierHeight Tuning, Sematech
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Strained SiGe and Si FinFETs for High PerformanceLogic with SiGe/Si stack on SOI, Sematech
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Reliable Single Atom Doping and Discrete DopantEffects on Transistor Performance, Shinada, WasedaUniversity, Japan
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