Results on proton irradiation tests in...
Transcript of Results on proton irradiation tests in...
October 2001 General Tracker Meeting IEKP - Universität Karlsruhe (TH)
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ResultsResults on on protonproton iirradiation rradiation teststests in Karlsruhein Karlsruhe
F. HartmannIEKP - Universität Karlsruhe (TH)
• p do Bulk & Surface DamageStrip parameters after irrad.
• VFD for (300µm) and 500µm sensors after 10 years LHC• Expected power for 500 µm sensors after 10 years LHC• Outlook
October 2001 General Tracker Meeting IEKP - Universität Karlsruhe (TH)
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Irradiation FacilityIrradiation Facility
Compact Cyclotron at Forschungszentrum Karlsruhe
• 34 MeV protons• 1000 nA• Beam spot:
2cm O• T < -10°C• Area: 20x40cm2
• Duration:100cm2 in 15min(1 sensor, 5e13p/cm2)
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Cold BoxCold Box
• Dry N2 atmosphere at –10°C.• Flexible box to hold sensors, teststructures
and/or modules!
• Laser focus• Simple power lines• Temp. monitor
October 2001 General Tracker Meeting IEKP - Universität Karlsruhe (TH)
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SimulateSimulate LHC LHC bias conditions bias conditions with respectwith respect to to surface damagesurface damage!!
Running @ LHCDuring proton irrad.:Diode acts as a current sourcedue to the p ionising effect
SOLVE: 1V potentialby applying Vbias = 1V,But AC must also be on GND!
Current source
RpolyDC
CC
AC
Here we need potential like in LHC 1M at 1 A = 1VΩ µ
Rpoly
Strip current after irrad
readout(on GND)
Vbias
diode
October 2001 General Tracker Meeting IEKP - Universität Karlsruhe (TH)
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How toRealize?
SimulateSimulate LHC LHC bias conditions bias conditions with respectwith respect to to surface damagesurface damage!!
Conductive rubber
Vbias = 1V during irrad
Bias ring--> GND
RpolyDC
ACShort all AC to bias (GND)
Backplane to +Vbias= 1V
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Sensors Sensors beforebefore//afterafter IrradiationIrradiation
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FluencesFluences in in the Trackerthe Tracker~1.5e14 n/cm2
for 320µm
~0.5e14 n/cm2
for 500µm
Upper limits:UFD<500VP(-10°C)<400mW
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Irradiation SchemeIrradiation Scheme2 fluences chosen:• Inner Tracker: 1.8e14 p/cm2 (~3e14 n/cm2):
– expected for low resisitivity silicon (300µm) * 1.8 ≈ 18yLHC• Outer Tracker: 0.5e14 p/cm2 (~8e13 n/cm2):
– expected for high resistivity silicon (500µm) *1.5 ≈ 15yLHC
Material (6“, 500µm thick):1 sensor W6b from Hamamatsu1 sensor OB2 from ST Microelectronics6 teststructures from Hamamatsu
Biasing:1V, 12V, 100V, non
Notice: Inner Tracker fluence on Outer Tracker (500µm) sensors instead of 300µm, PRO: 1. resistivity almost right 2. No 320µm sensors present, 3. HPK will in future deliver inner 300µm sensors
CON: unusual high VFD
October 2001 General Tracker Meeting IEKP - Universität Karlsruhe (TH)
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FluenceFluence MeasurementMeasurement1.) Measurement by Ni-foil activation behind sensors:• Calibration at 26 MeV• Scaling with cross section to higher energies• Fluence in [p/cm2]• Hardness factor κ(E) scales to neutron equivalent
2.) Ileak measurement:• Temperature scaling to 20°C
I(20°C)=I(T)*R(T); R(T)=(293K/T)2 ·e(-E/k(1/293K-1/T)); E=1.4eV• I/V=α*Φ• α(T=20°C)=4e-17 A/cm• Fluence in [n(1MeV)/cm2]
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Karlsruhe Karlsruhe probing equipmentprobing equipment
Bias
stencil/template
Measurements take ~1.5 - 2 hours Changing of sensor ~ 5 min
Environment: –10°C, RH~1%
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IVIV--Curve Curve beforebefore//afterafter IrradIrrad..
0 200 400 600 800 1000 12000
2µ4µ6µ8µ
10µ
500µ
1m
2m
2m
Cur
rent
[A]
Sensor HPK Sensor ST Sensor HPK irradiated (1.8e14 p/cm2) Sensor ST irradiated (0.5e14 p/cm2)
Voltage [V]
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Power Power ConsumptionConsumption
0.0 5.0x1013 1.0x1014 1.5x1014 2.0x1014 2.5x1014 3.0x1014
0.0
50.0µ
100.0µ
150.0µ
200.0µ
250.0µ
300.0µ
350.0µ
400.0µ
Data (500µm sensors, ~5kΩcm) Linear Fit Extrapolated value for 500µm sensor
at r=60cm
α(T=-10°C) = 1.2 10-18 A/cm
I / V
[A/c
m3 ]
eq. Fluence [n/cm2]
60µA/cm3 => Ileak(-10°C)=270µA (W6b) => P(500V, -10°C)=135mW/sensor
Actual designed cooling power 400mW for each module (at least).
P ~ UFD I ~ d2 d ~d3
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CVCV--Curve Curve beforebefore//afterafter IrradIrrad..
0 200 400 600 800 1000 1200
0,0
5,0x1016
1,0x1017
1,5x1017
2,0x1017
2,5x1017
3,0x1017
3,5x1017
Sensor HPK Sensor ST Sensor HPK irradiated (1.8e14 p/cm2) Sensor ST irradiated (0.5e14 p/cm2)
Cap
acita
nce-2
[F-2]
Voltage [V]
UFD ~ d2 => UFD(320µm) = 410V
ST and HPK sensors are stable up to Vbias=1000V after irradiation!Even strip tests were done at Vbias= 1000V!
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Hamburg ModelHamburg Model
UFD(Neff)~d2
Beneficial annealing
ga τa(20°C)
Stable Damage
gcc
Reverse Annealing
gYτY(20°C)
1 5 10 50 100 500
0.0
5.0x1011
1.0x1012
1.5x1012
2.0x1012
2.5x1012
Beneficial Annealing Stable Damage Reverse Annealing
N [c
m-3]
Time at RT [days]
PhD Thesis M. Moll:ga=(1.81±0.14)e-2 cm-1
τa(20°C) =55hgc=(1.49±0.04)e-2 cm-1
c=(10.9±0.8)e-2 cm-1/NeffgY=(5.16±0.09)e-2 cm-1
τY(20°C)=475d
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DevelopementDevelopement of Uof UFDFD
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,50
100200300400500600700800900
10001100
ST
Hamamatsu
Data (FS sensors) Hamburg Model
Full
Dep
letio
n Vo
ltage
[V]
eq. Fluence [1014n(1MeV)/cm2]
Data is fully compatible with the „Hamburg model“ fit!Predictions for different annealing scenarios possible!
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Full Full depletion as function depletion as function of of annealing annealing time and time and fluencefluence
Fluence given at once, then annealing.
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Annealing scenario:Annealing scenario:14 days at RT each year14 days at RT each year
0 14 28 42 56 70 84 98 112 126 140 154
0
100
200
300
400
500
600
500µm, 4.4kΩ, 5e13n/cm2
" Fluence at once 320µm, 2.2kΩ, 16e13n/cm2
Full
Dep
letio
n Vo
ltage
[V]
Annealing Time at RT [days]
Iterative calculation of full depletion voltage
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Depletion voltages for diodeDepletion voltages for diodeminisensor minisensor and and full sensorfull sensor
0 200 400 600 800 10000,0
5,0x1019
1,0x1020
1,5x1020
2,0x1020
2,5x1020
3,0x1020
~600V
~600V
~1000V
values shifted in y for comparison to compensate for different sizes
Diode 2.6e14 n/cm2
Full sensor 3e14 n/cm2
Mini sensor 2.6e14 n/cm2
Cap
acita
nce-2
[F-2]
Voltage [V]Future: diode measurements as reference!
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Strip Strip Leakage CurrentLeakage Current
0 5 10 15 20 25 30 35 40 45 50
0.01
0.1
1
10
100
1000
Minisensor 41
Before Irradiation After Irradiation and Annealing
(Measurement at -10°C)
Leak
age
Cur
rent
@ 4
00V
[nA]
Strip numberAs expected: Increase in leakage current!
October 2001 General Tracker Meeting IEKP - Universität Karlsruhe (TH)
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Bias ResistanceBias Resistance
0 5 10 15 20 25 30 35 40 45 50 55 60
1,8
1,9
2,0
2,1
2,2
2,3
Strip number
Minisensor H41
Before Irradiation Raw Data: After Irradiation and Annealing
(Measurement at -10°C) Corrected values due to high Ileak
Poly
Res
ista
nce
[MΩ
] Measurement:• Apply U=2V• Measure I• Calculate R=U/I
Correction:• Measure Ileak (high after irrad)• Correct Rc=U/(U/R+Ileak)
No change in bias resistances !
October 2001 General Tracker Meeting IEKP - Universität Karlsruhe (TH)
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Coupling CapacitanceCoupling Capacitance
0 5 10 15 20 25 30 35 40 45 506065707580859095
100105110115120
Strip number
Minisensor H39
Before Irradiation After Irradiation and Annealing
(Measurement at -10°C)
Cou
plin
g C
apac
itanc
e [p
F]
No change in coupling capacitances !
October 2001 General Tracker Meeting IEKP - Universität Karlsruhe (TH)
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Interstrip Interstrip capacitancecapacitance of HPK of HPK full full sensorsensor (1 (1 neighbourneighbour))
100 fF
<Cint>=3.2 pF
20 fF
Wedgeshaped sensor:Longer strips on the sides,but less neighbours!
structure
October 2001 General Tracker Meeting IEKP - Universität Karlsruhe (TH)
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InterstripInterstrip CapacitanceCapacitance
0 200 400 600 800 1000
0.15
0.30
0.45
0.60
0.75
0.90
Non irradiated: 1 MHz 100 kHz
Irradiated: 1 MHz 100 kHzIn
ters
trip
Cap
acita
nce
[pF]
Bias Voltage [V]
No change in interstrip capacitance before/after irrad.@ 1MHz.Homogeneous interstrip distribution before/after irrad.
70 72 74 76 78 80 82 84 86 88 901,4p
1,5p
1,5p
1,6p
1,6p
1,7p
1,7p
Before Irradiation After Irradiation
Inte
rstri
p C
apac
itanc
e [F
](2
nei
ghbo
urs)
Strip No.
October 2001 General Tracker Meeting IEKP - Universität Karlsruhe (TH)
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Future CMS Future CMS dedicated teststand dedicated teststand at at the Cyclotron the Cyclotron
•Scan area:20 x 50 [cm]
•Scan speed:1.25x 2.5 [cm/s]
•Maximum load:20kg
(New (New dedicated beamdedicated beamlineline))
October 2001 General Tracker Meeting IEKP - Universität Karlsruhe (TH)
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Future: Future: irradiation irradiation of a of a full modulefull module
• TEC outer, TEC inner,TOB,TIB• Longterm with high voltage, current, power
• Test of S/N, CCE, (pedestal,noise,shape)
• Test of components: sensor, electronics, mechanics
. First IEKPTEC module
October 2001 General Tracker Meeting IEKP - Universität Karlsruhe (TH)
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Conclusion Conclusion
1. Both: ST and HPK comply with the specification of irradiation hardness
2. Data fits „Hamburg model“ well and shows a decent behavior after 10 years of LHC operation
3. No changes in the strip parameters observed
4. Future dedicated teststand promise easy access to the cyclotron
5. Further plans: 300µm sensors and full modules will be irradiated!
October 2001 General Tracker Meeting IEKP - Universität Karlsruhe (TH)
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NEW:NEW: Ingot Ingot prepre--qualificationqualification((junejune 2001)2001)
• All measurements on diode and minisensorSave large sensors as spares!
INGOT: IV & CV on diodeTo determine Vdepletion, fluence estimation and α-factor.
PROCESS: Cint, Rint, leakage current, Rpoly vs. Vbias upto Vdepletion + 50V (for ~10 strips)
Hamamatsu proposed to produce a couple of additional sensors out of each new ingot for irradiation pre-qualification
Special procedure in addition to the standard task.