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Resonant Switching Series - RS...
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ResonantSwitchingSeriesReverseconductingIGBTwithmonolithicbodydiode
IHW15N120R3
Datasheet
IndustrialPowerControl
2
IHW15N120R3ResonantSwitchingSeries
Rev.2.4,2015-01-26
ReverseconductingIGBTwithmonolithicbodydiodeFeatures:
•Powerfulmonolithicbodydiodewithlowforwardvoltagedesignedforsoftcommutationonly•TRENCHSTOPTMtechnologyapplicationsoffers:-verytightparameterdistribution-highruggedness,temperaturestablebehavior-lowVCEsat-easyparallelswitchingcapabilityduetopositivetemperaturecoefficientinVCEsat•LowEMI•QualifiedaccordingtoJESD-022fortargetapplications•Pb-freeleadplating;RoHScompliant•CompleteproductspectrumandPSpiceModels:http://www.infineon.com/igbt/
Applications:
•Inductivecooking•Inverterizedmicrowaveovens•Resonantconverters•Softswitchingapplications
G
C
E
GC
E
KeyPerformanceandPackageParametersType VCE IC VCEsat,Tvj=25°C Tvjmax Marking PackageIHW15N120R3 1200V 15A 1.48V 175°C H15R1203 PG-TO247-3
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IHW15N120R3ResonantSwitchingSeries
Rev.2.4,2015-01-26
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
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IHW15N120R3ResonantSwitchingSeries
Rev.2.4,2015-01-26
MaximumRatingsForoptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter Symbol Value UnitCollector-emitter voltage VCE 1200 V
DCcollectorcurrent,limitedbyTvjmaxTC=25°CTC=100°C
IC 30.015.0
A
Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 45.0 A
TurnoffsafeoperatingareaVCE≤1200V,Tvj≤175°C - 45.0 A
Diodeforwardcurrent,limitedbyTvjmaxTC=25°CTC=100°C
IF 30.015.0
A
Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 45.0 A
Gate-emitter voltageTransientGate-emittervoltage(tp≤10µs,D<0.010) VGE
±20±25 V
PowerdissipationTC=25°CPowerdissipationTC=100°C Ptot
254.0127.0 W
Operating junction temperature Tvj -40...+175 °C
Storage temperature Tstg -55...+175 °C
Soldering temperature,wave soldering 1.6mm (0.063in.) from case for 10s 260 °C
Mounting torque, M3 screwMaximum of mounting processes: 3 M 0.6 Nm
ThermalResistance
Parameter Symbol Conditions Max.Value UnitCharacteristic
IGBT thermal resistance,junction - case Rth(j-c) 0.59 K/W
Diode thermal resistance,junction - case Rth(j-c) 0.59 K/W
Thermal resistancejunction - ambient Rth(j-a) 40 K/W
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IHW15N120R3ResonantSwitchingSeries
Rev.2.4,2015-01-26
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Valuemin. typ. max.
Parameter Symbol Conditions Unit
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.50mA 1200 - - V
Collector-emitter saturation voltage VCEsat
VGE=15.0V,IC=15.0ATvj=25°CTvj=125°CTvj=175°C
---
1.481.701.80
1.70--
V
Diode forward voltage VF
VGE=0V,IF=15.0ATvj=25°CTvj=125°CTvj=175°C
---
1.551.701.80
1.75--
V
Gate-emitter threshold voltage VGE(th) IC=0.40mA,VCE=VGE 5.1 5.8 6.4 V
Zero gate voltage collector current ICESVCE=1200V,VGE=0VTvj=25°CTvj=175°C
--
--
100.02500.0
µA
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA
Transconductance gfs VCE=20V,IC=15.0A - 13.9 - S
Integrated gate resistor rG none Ω
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Valuemin. typ. max.
Parameter Symbol Conditions Unit
DynamicCharacteristic
Input capacitance Cies - 1165 -
Output capacitance Coes - 40 -
Reverse transfer capacitance Cres - 32 -
VCE=25V,VGE=0V,f=1MHz pF
Gate charge QGVCC=960V,IC=15.0A,VGE=15V - 165.0 - nC
Internal emitter inductancemeasured 5mm (0.197 in.) fromcase
LE - 13.0 - nH
SwitchingCharacteristic,InductiveLoad
Valuemin. typ. max.
Parameter Symbol Conditions Unit
IGBTCharacteristic,atTvj=25°CTurn-off delay time td(off) - 300 - ns
Fall time tf - 46 - ns
Turn-off energy Eoff - 0.70 - mJ
Tvj=25°C,VCC=600V,IC=15.0A,VGE=0.0/15.0V,RG(on)=14.6Ω,RG(off)=14.6Ω,Lσ=180nH,Cσ=39pFLσ,CσfromFig.EEnergy losses include “tail” anddiode reverse recovery.
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IHW15N120R3ResonantSwitchingSeries
Rev.2.4,2015-01-26
SwitchingCharacteristic,InductiveLoad
Valuemin. typ. max.
Parameter Symbol Conditions Unit
IGBTCharacteristic,atTvj=175°CTurn-off delay time td(off) - 370 - ns
Fall time tf - 90 - ns
Turn-off energy Eoff - 1.25 - mJ
Tvj=175°C,VCC=600V,IC=15.0A,VGE=0.0/15.0V,RG(on)=14.6Ω,RG(off)=14.6Ω,Lσ=180nH,Cσ=39pFLσ,CσfromFig.EEnergy losses include “tail” anddiode reverse recovery.
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IHW15N120R3ResonantSwitchingSeries
Rev.2.4,2015-01-26
Figure 1. Collectorcurrentasafunctionofswitchingfrequency(Tj≤175°C,D=0.5,VCE=600V,VGE=15/0V,RG=14,6Ω)
f,SWITCHINGFREQUENCY[kHz]
IC,C
OLLECTO
RCURRENT[A]
1 10 100 10000
10
20
30
40
50
TC=80°
TC=110°
Figure 2. Forwardbiassafeoperatingarea(D=0,TC=25°C,Tj≤175°C;VGE=15V)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,C
OLLECTO
RCURRENT[A]
1 10 100 10000.1
1
10
100
tp=1µs
20µs
50µs
200µs
1ms
10ms
DC
Figure 3. Powerdissipationasafunctionofcasetemperature(Tj≤175°C)
TC,CASETEMPERATURE[°C]
Ptot ,POWERDISSIPATION[W
]
25 50 75 100 125 150 1750
50
100
150
200
250
300
Figure 4. Collectorcurrentasafunctionofcasetemperature(VGE≥15V,Tj≤175°C)
TC,CASETEMPERATURE[°C]
IC,C
OLLECTO
RCURRENT[A]
25 50 75 100 125 150 1750
10
20
30
40
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IHW15N120R3ResonantSwitchingSeries
Rev.2.4,2015-01-26
Figure 5. Typicaloutputcharacteristic(Tj=25°C)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,C
OLLECTO
RCURRENT[A]
0 1 2 30
15
30
45
VGE=20V
17V
15V
13V
11V
9V
7V
5V
Figure 6. Typicaloutputcharacteristic(Tj=175°C)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,C
OLLECTO
RCURRENT[A]
0 1 2 3 40
15
30
45
VGE=20V
17V
15V
13V
11V
9V
7V
5V
Figure 7. Typicaltransfercharacteristic(VCE=20V)
VGE,GATE-EMITTERVOLTAGE[V]
IC,C
OLLECTO
RCURRENT[A]
2 4 6 8 10 120
15
30
4525°CTj=175°C
Figure 8. Typicalcollector-emittersaturationvoltageasafunctionofjunctiontemperature(VGE=15V)
Tj,JUNCTIONTEMPERATURE[°C]
VCE(sat) ,COLLECTO
R-EMITTE
RSATU
RATION[V
]
0 25 50 75 100 125 150 1751.0
1.5
2.0
2.5
3.0IC=7.5AIC=15AIC=30A
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IHW15N120R3ResonantSwitchingSeries
Rev.2.4,2015-01-26
Figure 9. Typicalswitchingtimesasafunctionofcollectorcurrent(ind.load,Tj=175°C,VCE=600V,VGE=0/15V,RG(on)=14,6Ω,RG(off)=14,6Ω,testcircuitinFig. E)
IC,COLLECTORCURRENT[A]
t,SWITCHINGTIMES[ns]
0 5 10 15 20 25 3010
100
1000td(off)
tf
Figure 10. Typicalswitchingtimesasafunctionofgateresistance(ind.load,Tj=175°C,VCE=600V,VGE=0/15V,IC=15A,testcircuitinFig.E)
RG,GATERESISTANCE[Ω]
t,SWITCHINGTIMES[ns]
10 20 30 40 5010
100
1000td(off)
tf
Figure 11. Typicalswitchingtimesasafunctionofjunctiontemperature(ind.load,VCE=600V,VGE=0/15V,IC=15A,RG(on)=14,6Ω,RG(off)=14,6Ω,testcircuitinFig. E)
Tj,JUNCTIONTEMPERATURE[°C]
t,SWITCHINGTIMES[ns]
25 50 75 100 125 150 17510
100
1000td(off)
tf
Figure 12. Gate-emitterthresholdvoltageasafunctionofjunctiontemperature(IC=0.4mA)
Tj,JUNCTIONTEMPERATURE[°C]
VGE(th) ,GATE
-EMITTE
RTHRESHOLD
VOLTAGE[V
]
0 25 50 75 100 125 150 1752
3
4
5
6
7typ.min.max.
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IHW15N120R3ResonantSwitchingSeries
Rev.2.4,2015-01-26
Figure 13. Typicalswitchingenergylossesasafunctionofcollectorcurrent(ind.load,Tj=175°C,VCE=600V,VGE=0/15V,RG(on)=14,6Ω,RG(off)=14,6Ω,testcircuitinFig. E)
IC,COLLECTORCURRENT[A]
E,S
WITCHINGENERGYLOSSES[m
J]
0 5 10 15 20 25 300.0
0.5
1.0
1.5
2.0
2.5Eoff
Figure 14. Typicalswitchingenergylossesasafunctionofgateresistance(ind.load,Tj=175°C,VCE=600V,VGE=0/15V,IC=15A,testcircuitinFig.E)
RG,GATERESISTANCE[Ω]
E,S
WITCHINGENERGYLOSSES[m
J]
10 20 30 40 501.0
1.1
1.2
1.3
1.4
1.5
1.6Eoff
Figure 15. Typicalswitchingenergylossesasafunctionofjunctiontemperature(indload,VCE=600V,VGE=0/15V,IC=15A,RG(on)=14,6Ω,RG(off)=14,6Ω,testcircuitinFig. E)
Tj,JUNCTIONTEMPERATURE[°C]
E,S
WITCHINGENERGYLOSSES[m
J]
25 50 75 100 125 150 1750.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3Eoff
Figure 16. Typicalswitchingenergylossesasafunctionofcollectoremittervoltage(ind.load,Tj=175°C,VGE=0/15V,IC=15A,RG(on)=14,6Ω,RG(off)=14,6Ω,testcircuitinFig. E)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
E,S
WITCHINGENERGYLOSSES[m
J]
400 500 600 700 800 900 10000.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0Eoff
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IHW15N120R3ResonantSwitchingSeries
Rev.2.4,2015-01-26
Figure 17. Typicalturnoffswitchingenergylossforsoftswitching(indload,VCE=600V,VGE=15/0V,IC=15A,RG=14,6Ω,testcircuitinFig.E)
dv/dt,VOLTAGESLOPE[V/µs]
E,S
WITCHINGENERGYLOSSES[m
J]
100 1000 1E+40.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4IC=30A, Tj=30°CIC=30A, Tj=30°C
Figure 18. Typicalgatecharge(IC=15A)
QGE,GATECHARGE[nC]
VGE,G
ATE
-EMITTE
RVOLTAGE[V
]
0 25 50 75 100 125 150 1750
2
4
6
8
10
12
14
16240V960V
Figure 19. Typicalcapacitanceasafunctionofcollector-emittervoltage(VGE=0V,f=1MHz)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
C,C
APACITANCE[pF]
0 10 20 3010
100
1000
Cies
Coes
Cres
Figure 20. IGBTtransientthermalimpedance(D=tp/T)
tp,PULSEWIDTH[s]
ZthJC,TRANSIENTTH
ERMALIMPEDANCE[K
/W]
1E-6 1E-5 1E-4 0.001 0.01 0.1 10.001
0.01
0.1
1
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
i:ri[K/W]:τi[s]:
14.6E-32.4E-5
20.14313.3E-4
30.20973.1E-3
40.21850.01636424
50.012047620.1753518
61.9E-31.713276
72.1E-44.662402
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IHW15N120R3ResonantSwitchingSeries
Rev.2.4,2015-01-26
Figure 21. Diodetransientthermalimpedanceasafunctionofpulsewidth(D=tp/T)
tp,PULSEWIDTH[s]
ZthJC,TRANSIENTTH
ERMALIMPEDANCE[K
/W]
1E-6 1E-5 1E-4 0.001 0.01 0.1 10.001
0.01
0.1
1
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
i:ri[K/W]:τi[s]:
14.6E-32.4E-5
20.14313.3E-4
30.20973.1E-3
40.21850.01636424
50.0120.1753518
61.9E-31.713276
72.1E-44.662402
Figure 22. Typicaldiodeforwardcurrentasafunctionofforwardvoltage
VF,FORWARDVOLTAGE[V]
IF ,FORWARDCURRENT[A]
0 1 2 30
15
30
45Tj=25°CTj=175°C
Figure 23. Typicaldiodeforwardvoltageasafunctionofjunctiontemperature
Tj,JUNCTIONTEMPERATURE[°C]
VF ,FO
RWARDVOLTAGE[V
]
0 25 50 75 100 125 150 1751.0
1.5
2.0
2.5IF=7.5AIF=15AIF=30A
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IHW15N120R3ResonantSwitchingSeries
Rev.2.4,2015-01-26
t
a b
td(off)
tf t
rtd(on)
90% IC
10% IC
90% IC
10% VGE
10% IC
t
90% VGE
t
t
90% VGE
VGE
(t)
t
t
tt1 t4
2% IC
10% VGE
2% VCE
t2 t3
E
t
t
V I toff
= x x d
1
2
CE C E
t
t
V I ton
= x x d
3
4
CE C
CC
dI /dtF
dI
I,V
Figure A.
Figure B.
Figure C. Definition of diode switchingcharacteristics
Figure E. Dynamic test circuit
Figure D.
I (t)C
Parasitic inductance L ,
parasitic capacitor C ,
relief capacitor C ,
(only for ZVT switching)
s
s
r
t t t
Q Q Qrr a b
rr a b
= +
= +
Qa Qb
V (t)CE
VGE
(t)
I (t)C
V (t)CE
15
IHW15N120R3
Resonant Switching Series
Rev. 2.4, 2015-01-26
Revision History
IHW15N120R3
Revision: 2015-01-26, Rev. 2.4
Previous Revision
Revision Date Subjects (major changes since last revision)
1.1 2009-04-01 -
2.1 2009-05-27 -
2.2 2011-04-05 Pack. draw. rev. 05, marking update
2.3 2013-02-12 Layout change
2.4 2015-01-26 Minor changes
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Published byInfineon Technologies AG81726 Munich, Germany81726 München, Germany© 2015 Infineon Technologies AGAll Rights Reserved.
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