Relative Energy Levels of Defects

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Relative Energy Levels of Defects Information was extracted from: Porter and Easterling, Phase Transformations in Metals and Alloys , 2nd Edition, CRC Press, 2004. Crystal T m ( o C) SV (m J/m 2 ) b (m J/m 2 ) T( o C) b/ sv Sn 232 680 164 223 0.24 Al 660 1080 324 450 0.30 Ag 961 1120 375 950 0.33 Au 1063 1390 378 1000 0.27 Cu 1084 1720 625 925 0.36 -Fe NR NR 756 1350 0.40 -Fe 1536 2080 468 1450 0.23 Pt 1769 2280 660 1300 0.29 W 3407 2650 1080 2000 0.41 Crystal Coherant Tw inBoudary Energy (m J/m 2 ) Incoherant Tw inBoundary Energy (m J/m 2 ) Grain Boundary Energy (m J/m 2 ) Cu 21 498 623 Ag 8 126 377 Fe-Cr-Ni (StainlessSteel Type304) 19 209 835 Surface energy at the solid liquid interface (AKA: interfacial free energy) Rule of thumb that high angle grain boundary energies gb: b ≈ 1/3 sv Random High Angle Grain Boundary: > 10-15 o

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Relative Energy Levels of Defects. Information was extracted from: Porter and Easterling, Phase Transformations in Metals and Alloys , 2nd Edition, CRC Press , 2004. Surface energy at the solid liquid interface (AKA: interfacial free energy). - PowerPoint PPT Presentation

Transcript of Relative Energy Levels of Defects

Page 1: Relative Energy Levels of Defects

Relative Energy Levels of DefectsInformation was extracted from: Porter and Easterling, Phase Transformations in Metals and Alloys, 2nd Edition, CRC Press, 2004.

Crystal Tm (oC) SV (mJ/m2) b (mJ/m2) T (oC) b/ sv

Sn 232 680 164 223 0.24

Al 660 1080 324 450 0.30

Ag 961 1120 375 950 0.33

Au 1063 1390 378 1000 0.27

Cu 1084 1720 625 925 0.36

-Fe NR NR 756 1350 0.40

-Fe 1536 2080 468 1450 0.23

Pt 1769 2280 660 1300 0.29

W 3407 2650 1080 2000 0.41

Crystal Coherant Twin Boudary

Energy (mJ/m2)

Incoherant Twin Boundary

Energy (mJ/m2)

Grain Boundary

Energy (mJ/m2)

Cu 21 498 623

Ag 8 126 377

Fe-Cr-Ni(Stainless Steel Type 304)

19 209 835

Surface energy at the solid liquid interface (AKA: interfacial free energy)

Rule of thumb that high angle grain boundary energies gb:

 

b ≈ 1/3 sv

Random High Angle Grain Boundary: 

> 10-15o

Page 2: Relative Energy Levels of Defects

• Doping silicon with phosphorus for n-type semiconductors:• Process:

3. Result: Doped semiconductor regions.

silicon

Processing Using Diffusion

magnified image of a computer chip

0.5 mm

light regions: Si atoms

light regions: Al atoms

2. Heat it.

1. Deposit P rich layers on surface.

silicon

Adapted from chapter-opening photograph, Chapter 18, Callister 7e.

Elemental Dot Map from SEM EDS 200X

Page 3: Relative Energy Levels of Defects

Diffusion• How do we mathematically quantify the amount or rate of mass

transfer (rate of diffusion)?

• Measured empirically– Make thin film (membrane) of known surface area– Impose concentration gradient– Measure how fast atoms or molecules diffuse through the membrane

sm

kgor

scm

mol

timearea surface

diffusing mass) (or molesFlux

22J

dt

dM

AAt

MJ

1

M =mass

diffused

time

J slope

Page 4: Relative Energy Levels of Defects

Steady-State Diffusion

dx

dCDJ

Fick’s first law of diffusionC1

C2

x

C1

C2

x1 x2

D diffusion coefficient [m2/s]“Diffusivity”

Rate of diffusion independent of time (does not change with time)

Flux proportional to concentration gradient =dx

dC

12

12 linear ifxx

CC

x

C

dx

dC

(change in concentration with position)

Page 5: Relative Energy Levels of Defects

Example: Chemical Protective Clothing (CPC)

• Methylene chloride is a common ingredient of paint removers. Besides being an irritant, it also may be absorbed through skin. When using this paint remover, protective gloves should be worn.

• If butyl rubber gloves (0.04 cm thick) are used, what is the diffusive flux of methylene chloride through the glove?

• Data:– diffusion coefficient in butyl rubber:

D = 110 x10-8 cm2/s

– surface concentrations:

C2 = 0.02 g/cm3

C1 = 0.44 g/cm3

Page 6: Relative Energy Levels of Defects

scm

g 10 x 16.1

cm) 04.0(

)g/cm 44.0g/cm 02.0(/s)cm 10 x 110(

25-

3328-

J

Example (cont).

12

12- xx

CCD

dx

dCDJ

Dtb 6

2

gloveC1

C2

skinpaintremover

x1 x2

• Solution – assuming linear conc. gradient

D = 110 x 10-8 cm2/s

C2 = 0.02 g/cm3

C1 = 0.44 g/cm3

x2 – x1 = 0.04 cm

Data:

Page 7: Relative Energy Levels of Defects

Diffusion and Temperature• Diffusion coefficient increases with increasing T.

DDo exp

Qd

RT

= Material constant [m2/s]

= diffusion coefficient [m2/s]

= activation energy [J/mol or eV/atom]

= gas constant [8.314 J/mol-K]

= absolute temperature [K]

D

Do

Qd

R

T

Arrhenius Equation

Page 8: Relative Energy Levels of Defects

What is Do?

For Vacancy Diffusion in Cubic Crystal:

RT

H

R

SzD mm

V expexp6

1 2

RT

QDD Do exp

R

SzD m

o exp6

1 2

is the concentration at jump plane is the mean frequency of vibration in the jump direction

or number of attempted jumpsz is the number of available sites to jump toSm is the activation entropy of migration (increase in entropy due to migration)

Page 9: Relative Energy Levels of Defects

Diffusion and Temperature

Adapted from Fig. 5.7, Callister 7e. (Date for Fig. 5.7 taken from E.A. Brandes and G.B. Brook (Ed.) Smithells Metals Reference Book, 7th ed., Butterworth-Heinemann, Oxford, 1992.)

D has exponential dependence on T

Dinterstitial >> Dsubstitutional

C in -FeC in -Fe

Al in AlFe in -FeFe in -Fe

1000 K/T

D (m2/s) C in -Fe

C in -Fe

Al in Al

Fe in -Fe

Fe in -Fe

0.5 1.0 1.510-20

10-14

10-8

T(C)15

00

1000

600

300

Page 10: Relative Energy Levels of Defects

Example: At 300ºC the diffusion coefficient and activation energy for Cu in Si are

D(300ºC) = 7.8 x 10-11 m2/sQd = 41.5 kJ/mol

What is the diffusion coefficient at 350ºC?

101

202

1lnln and

1lnln

TR

QDD

TR

QDD dd

121

212

11lnlnln

TTR

Q

D

DDD d

transform data

D

Temp = T

ln D

1/T

Page 11: Relative Energy Levels of Defects

Example (cont.)

K 573

1

K 623

1

K-J/mol 314.8

J/mol 500,41exp /s)m 10 x 8.7( 211

2D

1212

11exp

TTR

QDD d

T1 = 273 + 300 = 573 K

T2 = 273 + 350 = 623 K

D2 = 15.7 x 10-11 m2/s

Note that we have doubled the diffusion rate with 50oC increase in temperature!

Page 12: Relative Energy Levels of Defects

Non-steady State Diffusion• The concentration of diffusing species is a function of both time and position C = C(x,t)• The diffusion flux and concentration at a particular point in solid vary with time

– Result in net accumulation or depletion of diffusing species

2

2

x

CD

t

C

Fick’s Second Law:

x

CD

xt

C

If diffusion coefficient is independent of composition:

Solutions to this expression give concentration in terms of both position and time

Page 13: Relative Energy Levels of Defects

Example

Adapted from Fig. 5.5, Callister 7e.

B.C. at t = 0, C = Co for 0 x

at t > 0, C = CS for x = 0 (const. surf. conc.)

C = Co for x =

• Copper diffuses into a bar of aluminum.

pre-existing conc., Co of copper atoms

Surface conc., C of Cu atoms bar

s

Cs

Page 14: Relative Energy Levels of Defects

Solution:

C(x,t) = Conc. at point x at time t

erf (z) = error function

erf(z) values are given in Table 5.1

CS

Co

C(x,t)

Dt

x

CC

Ct,xC

os

o

2 erf1

dye yz 2

0

2

Page 15: Relative Energy Levels of Defects

Non-steady State Diffusion

• Sample Problem: An FCC iron-carbon alloy initially containing 0.20 wt% C is carburized at an elevated temperature and in an atmosphere that gives a surface carbon concentration constant at 1.0 wt%. If after 49.5 h the concentration of carbon is 0.35 wt% at a position 4.0 mm below the surface, determine the temperature at which the treatment was carried out.

• Solution: use Eqn. 5.5

Dt

x

CC

CtxC

os

o

2erf1

),(

Page 16: Relative Energy Levels of Defects

Solution (cont.):

– t = 49.5 h x = 4 x 10-3 m

– Cx = 0.35 wt% Cs = 1.0 wt%

– Co = 0.20 wt%

Dt

x

CC

C)t,x(C

os

o

2erf1

)(erf12

erf120.00.1

20.035.0),(z

Dt

x

CC

CtxC

os

o

erf(z) = 0.8125

Page 17: Relative Energy Levels of Defects

Solution (cont.):We must now determine from Table 5.1 the value of z for which the error function is 0.8125. An interpolation is necessary as follows

z erf(z)

0.90 0.7970z 0.81250.95 0.8209

7970.08209.0

7970.08125.0

90.095.0

90.0

z

z 0.93

Now solve for D

Dt

xz

2

tz

xD

2

2

4

/sm 10 x 6.2s 3600

h 1

h) 5.49()93.0()4(

m)10 x 4(

4

2112

23

2

2

tz

xD

Page 18: Relative Energy Levels of Defects

• To solve for the temperature at which D has above value, we use a rearranged form of Equation (5.9a);

)lnln( DDR

QT

o

d

from Table 5.2, for diffusion of C in FCC Fe

Do = 2.3 x 10-5 m2/s Qd = 148,000 J/mol

/s)m 10x6.2 ln/sm 10x3.2 K)(ln-J/mol 314.8(

J/mol 000,14821125

T

Solution (cont.):

T = 1300 K = 1027°C

Page 19: Relative Energy Levels of Defects

Estimate for Diffusion Distance

If you need an engineering estimate for diffusion distance, you can use

Dt )(2

ss

m