Radiation Effects on Emerging Electronic Materials and DevicesRon SchrimpfVanderbilt UniversityElectrical Engineering & Computer Science DepartmentInstitute for Space and Defense Electronics

Radiation Effects on Emerging Electronic Materials and DevicesMore changes in IC technology and materials in past five years than previous forty yearsSiGe, SOI, strained Si, alternative dielectrics, new metallization systems, ultra-small devicesFuture space and defense systems require understanding radiation effects in advanced technologiesChanges in device geometry and materials affect energy deposition, charge collection, circuit upset, parametric degradation

Team MembersVanderbilt UniversityElectrical Engineering: Mike Alles, Dan Fleetwood, Ken Galloway, Marcus Mendenhall, Lloyd Massengill, Robert Reed, Ron Schrimpf, Bob WellerPhysics: Len Feldman, Sok PantelidesArizona State UniversityElectrical Engineering: Hugh BarnabyUniversity of FloridaElectrical and Computer Engineering: Mark Law, Scott ThompsonGeorgia TechElectrical and Computer Engineering: John CresslerNorth Carolina State UniversityPhysics: Gerry LucovskyRutgers UniversityChemistry: Eric Garfunkel, Gennadi BersukerIndustrial and government collaboratorsIBM, Intel, Texas Instruments, Freescale, Jazz, National Semiconductor, SRC/Sematech, Sandia, NASA/DTRA, Lockheed-Martin, Oak Ridge National Lab, CFDRC

Institute for Space and Defense ElectronicsResource to support national requirements in radiation effects analysis and rad-hard design

Bring academic resources/expertise and real-world engineering to bear on system-driven needs

ISDE provides:Government and industry radiation-effects resourceModeling and simulationDesign support: rad models, hardening by designTechnology support: assessment, characterizationFlexible staffing driven by project needs10 Faculty25 Graduate students14 Staff and Research Engineers

ScheduleJune 14 AM

8:40MURI OverviewRon Schrimpf, Vanderbilt University9:00Overview: Atomic-Scale Theory of Radiation-Induced PhenomenaSokrates Pantelides, Vanderbilt University9:20Hf Impurities in Si-SiO2-Si StacksApostolos Marinopoulos, Vanderbilt University9:35Quantum Mechanical Description of Displacement Damage FormationMatt Beck, Vanderbilt University9:55Role of Hydrogen in Radiation Response of Lateral PNP Bipolar TransistorsSasha Batyrev, Vanderbilt University10:10Doping-Type Dependence of Damage in Silicon DiodesDan Fleetwood, Vanderbilt University10:30Break11:00Defects in Non-Crystalline and Nano-Crystalline Alternative Transition Metal DielectricsGerry Lucovsky, North Carolina State University11:40Total Dose Response of HfSiON MOS CapacitorsDakai Chen, Vanderbilt University

ScheduleJune 14 PM1:00Overview: Radiation Effects in Emerging MaterialsLen Feldman, Vanderbilt University1:20Radiation-Induced Charge Trapping in Ultra-Thin HfO2 Based MOSFETsSriram Dixit, Vanderbilt University1:40Radiation Effects in Advanced Gate StacksEric Garfunkel, Rutgers UniversityGennadi Bersuker, Sematech2:20Break2:50Radiation Effects in SiGe DevicesJohn Cressler, Georgia Tech3:30Effects of Angle of Incidence and Temperature on Latchup in 65-nm TechnologyJohn Hutson, Vanderbilt University3:50Radiation Challenges in Strained Si TechnologiesScott Thompson, University of Florida4:30Discussion6:30Dinner

ScheduleJune 158:00Registration and Continental Breakfast 8:30Total Ionizing Dose Effects in Deep Submicron Bulk CMOS TechnologiesHugh Barnaby, Arizona State University8:50Band-to-Band Tunneling Induced Leakage Current Enhancement in Irradiated FD-SOIPhilippe Adell, JPL9:10Enhanced Radiation-Induced Degradation due to Excess Molecular HydrogenJie Chen, Arizona State University 9:30Enabling Radiation-Effects Device SimulationsMark Law, University of Florida9:50Overview: Monte Carlo Radiative Energy DepositionBob Weller, Vanderbilt University10:10Impact of Ion Energy and Specie on Single Event Effects AnalysisRobert Reed, Vanderbilt University10:30Break High Speed SEE Test Set Demonstration in FGH 31011:00Variation in Proton-Induced Energy Deposition in Large Silicon Diode ArraysChristina Howe, Vanderbilt University11:20Neutron-Induced Multiple-Bit UpsetAlan Tipton and Jonny Pellish, Vanderbilt University11:40Effect of Voltage Fluctuations on SET Response of Deep Submicron Digital ICsMatt Gadlage, Vanderbilt University12:00Meeting Ends

DURIP-funded High-Speed SEE Test Equipment12.5 Gbit/s bit error rate tester31.5 GHz analog signal generator12 GHz real-time digital storage oscilloscopeDC-40 GHz RF coax assemblies

Requires high-speed packagingDC-40 GHz probe station100 nm-step resolution stageConfigure horizontally or verticallyNIR laser irradiationBroadbeam heavy ion

Eliminates need for high-speed packaging

Radiation Effects in Emerging Electronic Materials and DevicesMotivationSelected ResultsImpactDevelopment of most accurate rate-prediction tool to dateIdentification of tungsten as key rad-effects issueFabrication of rad-hard, reliable HfSiON gate dielectricsDemonstration of extremely rad-hard SiGe technologyFirst examination of rad effects in strained-Si CMOS

More changes in IC technology and materials in past five years than previous forty yearsimpact on radiation response is dramatic

Experimental analysis of state-of-the-art technologies through partnerships with semiconductor manufacturersIdentification of critical mechanisms through first-principles modelingImplementation and application of a revolutionary multi-scale radiation-effects simulation tool to identify key challenges and develop hardening approaches

ApproachDesign tools and methods demonstrated for future rad-hard technologiesGreatly improved error-rate analysis tools allow implementation of more reliable space electronicsFirst radiation-effects characterization of most advanced technologies (strained Si, HfSiON, etc.)essential for deployment of state-of-the-art electronics in DoD systems

Radiation Effects in Emerging Electronic Materials and Devices: ResultsRadiation Response of New MaterialsSingle Events in New TechnologiesLocalized Radiation DamageRADSAFEFirst multi-scale Monte Carlo single-event/rate-prediction toolPassivation/metallization found to dominate SEE response in some hardened technologiesExcellent agreement with on-orbit data; conventional rate-prediction methods underestimate rate by orders of magnitude

Incorporation of new materials dramatically impacts radiation responseHfO2-based dielectrics and emerging high-k materials tested; HfSiON is very promisingSubstrate engineering (strained Si, Si orientations, Si/SiGe, SOI) offers possibility for single-event hardening

New device technologies strongly impact single-event response and TID leakage currentSiGe HBTs, strained Si CMOS, ultra-small bulk CMOS exhibit complicated charge collection mechanismsFloating-body SOI found to exhibit high radiation-induced off-state leakage due to tunneling

Impact of New Device StructuresFirst-principles evidence of micro-melting in small devicesDisplacement damage found to depend on substrate doping typeMonte-Carlo simulation tool for non-ionizing energy loss developed

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Radiation Effects on Emerging Electronic Materials and Devices: Recent ResultsNew Error-Rate Prediction ToolFirst Radiation Results on HfSiONFirst dynamical calculation of displace-ment damage from first principlesHf-based dielectrics emerging at 45-nm and belowMuch improved radiation response compared to standard Hf silicate filmsInterface nitridation is the key to hardness

Conventional methods underestimate error rate by orders of magnitudeNew RADSAFE approach provides outstanding agreement with on-orbit dataDemonstrates that tungsten metallization can dramatically impact error rate

Multiple-bit upsets are the key reliability issue in advanced memoriesPredicting MBU rate allows design of ECC and memory architectureFraction of events resulting in MBUs doubles for grazing anglesFirst Neutron MBU CalculationsVery large disordered regions can lead to single-event hard and soft errorsKey reliability issue at 65 nm and belowPossible explanation for dielectric rupture

Radiation Effects on Emerging Electronic Materials and Devices: Recent ResultsEffects of Strain on SEENew Gate DielectricsSEE in SiGe HBTsHf-based dielectrics emerging in new technologiesCombined effects of radiation and negative-bias temperature stress much greater than expected

First experiments to vary strain during SEE testing planned for 2007Strain leads to enhanced mobility and non-isotropic transportAlmost all advanced CMOS will use strain engineering

Quantitative analysis of MBU rate in advanced SRAMsFraction of events resulting in MBUs increases for new technologiesExplanation of SEE sensitivity of cells resistant to single strikesMultiple-Bit UpsetMicrobeam testing shows charge collection from distant strikes Mechanisms identified through simulationHardening approach proposed

New Physically-Based Method of Predicting Single-Event Error RatesMREDSPICESensitive VolumesTCADCritical ChargeSolid Model MaterialsError RateCross SectionSensitive VolumesCircuit ResponseTransportCalorimetryCross SectionError RateTransportCalorimetryCircuit ResponseMaterialsEnvironment(Beam/Natural)LocationsDimensions