Qualcomm Snapdragon 800, TSMC 28HPM Process
Transcript of Qualcomm Snapdragon 800, TSMC 28HPM Process
CHIPWORKS CONFIDENTIAL
All content © 2013, Chipworks Inc. All rights reserved.
Qualcomm Snapdragon 800,
TSMC 28HPM Process
Found in the Samsung
Galaxy S4 LTE-A Major functional blocks
• Quad-core Krait 400 CPU (2.3 GHz)
• Adreno 330 GPU (450 MHz)
• 3G/4G LTE modem
• Die size (edge seal) 11.14 mm x 10.62 mm
(118.3 mm2)
• SRAM cell area 0.13 µm2
• TSMC 28HPM (High Performance Mobile)
Process
PMOS transistor
CHIPWORKS CONFIDENTIAL
All content © 2013, Chipworks Inc. All rights reserved.
$5,000 Functional Analysis Report Qualcomm MSM8974 ARAGORN Snapdragon™ 800 Application Processor
$17,000 Front End of Line Structural Analysis Report Qualcomm MSM8974 TSMC 28 nm HPM CMOS process review
$2,500 Poly Die Photo Qualcomm HG11-N7440
$200 Die Photo Qualcomm HG11-N7440
Qualcomm Snapdragon 800 – Photos and Reports
2
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CHIPWORKS CONFIDENTIAL
All content © 2013, Chipworks Inc. All rights reserved.
$5,000 Functional Analysis Report Qualcomm MSM8974 ARAGORN Snapdragon™ 800 Application Processor
Qualcomm Snapdragon 800 – FAR
3
This report is a basic functional analysis (FAR) with costing of the Qualcomm MSM8974
Snapdragon 800 series application processor die, which is a quad core CPU Snapdragon
system-on-chip (SoC) for advanced smartphones.
This report contains the following detailed information:
• Package photographs, package X-rays, die photographs, and a delayered die photograph
with annotated functional blocks and memories
• Identification of major functional blocks on a polysilicon die photograph
• Table of functional block sizes and percentage of die utilization
• High resolution top metal and polysilicon die photographs delivered in the ICWorks Surveyor
• Measurement of vertical and horizontal dimensions of the major microstructural features
• Scanning electron microscope (SEM) cross-sectional micrographs of dielectric materials,
metallization, and transistors
Chipworks Store Link
CHIPWORKS CONFIDENTIAL
All content © 2013, Chipworks Inc. All rights reserved.
$17,000 Front End of Line Structural Analysis Report Qualcomm MSM8974 TSMC 28 nm HPM CMOS process review
Qualcomm Snapdragon 800 – FEOL
4
This report is a front end of line structural analysis of the Qualcomm MSM8974 Snapdragon
800 application processor, built on 300 mm wafers using TSMC’s CMOS gate last high-k metal
gate (HKMG) process. Qualcomm describes the process as a high performance mobile (HPM)
28 nm process.
This report contains the following detailed information:
• Package photographs, package X-rays, die markings and an annotated die photograph
• Measurements of vertical and horizontal dimensions of the major microstructural features
• Transmission electron microscope (TEM) and scanning electron microscope (SEM) cross-
sectional micrographs of dielectric materials, metallization, and transistors
• Results of TEM-EDS analysis of metal interconnect and transistor structures
• Scanning capacitance microscopy (SCM) and secondary ion mass spectrometry (SIMS)
analyses of the wells and substrate
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