Quad SPST +70V Analog Switches - RS Components · 2019. 10. 24. · Quad SPST +70V Analog Switches...
Transcript of Quad SPST +70V Analog Switches - RS Components · 2019. 10. 24. · Quad SPST +70V Analog Switches...
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_______________________________________________________________ Maxim Integrated Products 1
For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com.
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Quad SPST +70V Analog Switches
19-5720; Rev 0; 12/10
General DescriptionThe MAX14756/MAX14757/MAX14758 are analog switches with a low on-resistance of 10I (max) that conduct equally well in both directions. All devices have a rail-to-rail analog-signal range. They operate with a sin-gle +10V to +70V supply in unipolar applications or Q35V dual supplies in bipolar applications. The bipolar sup-plies can be offset and do not have to be symmetrical.
The MAX14756 is a quad normally closed (NC) single-pole/single-throw (SPST) switch, the MAX14757 is a quad normally open (NO) SPST switch, and the MAX14758 has two NO and two NC SPST switches. These switches have 5I (typ) on-resistances and low on-leakage currents of 0.01nA (typ). The on-resistance flatness is 0.004I (typ).
The devices are suitable for a multitude of analog signal routing and switching applications. They are specified over an extended temperature range of -40NC to +85NC, but can be operated up to +125NC with elevated leakage currents.
ApplicationsIndustrial Control Systems
Instrumentation
Battery Management
Environmental Control Systems
Medical Systems
ATE System
Audio Signal Routing/Switching
Automotive
FeaturesS Single-Supply Operation from +10V to +70V
S Bipolar-Supply Operation Up to ±35V
S On-Resistance of 10I (max)
S RON Flatness of 0.004I (typ)
S 2.5nA (max) Off-Leakage Currents at +85°C
S Overvoltage/Undervoltage Clamping Through Protection Diodes
S 500µA (typ) Supply Current
S TSSOP 16-Pin Package
S -40°C to +85°C Ambient Temperature Range
S Functionally Compatible to DG411, DG412, and DG413
S Functionally Operational Up to +125°C
Ordering Information
+Denotes a lead(Pb)-free/RoHS-compliant package.
Functional Diagrams+
TSSOP
134 VDDVSS
143 EN2EN1
152 B2B1
161 A2A1
107 B3B4
116 EN3EN4
98 A3A4
125 VLGNDMAX14756
EN_ LOGIC SWITCHES
0 CLOSED
1 OPEN
MAX14756
+
TSSOP
134 VDDVSS
143 EN2EN1
152 B2B1
161 A2A1
107 B3B4
116 EN3EN4
98 A3A4
125 VLGNDMAX14757
EN_ LOGIC SWITCHES
0 OPEN
1 CLOSED
MAX14757
+
TSSOP
134 VDDVSS
143 EN2EN1
152 B2B1
161 A2A1
107 B3B4
116 EN3EN4
98 A3A4
125 VLGNDMAX14758
EN_ LOGIC SWITCHES 1, 4
0 CLOSED
1 OPEN
SWITCHES 2, 3
OPEN
CLOSED
MAX14758
PART FUNCTIONTEMP
RANGEPIN-PACKAGE
MAX14756EUE+Quad NC
SPST-40NC to +85NC
16 TSSOP
MAX14757EUE+Quad NO
SPST-40NC to +85NC
16 TSSOP
MAX14758EUE+Dual NO + NC SPST
-40NC to +85NC
16 TSSOP
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Quad SPST +70V Analog Switches
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
VDD to VSS ...........................................................-0.3V to +72VVSS to GND ..........................................................-36V to +0.3VVL, EN_ to GND ........ -0.3V to the lesser of (+12V, VDD + 0.3V)A_, B_ to VSS ..............................-0.3V to (VDD + 2V) or 100mA
(whichever occurs first)Continuous Current into A_, B_ ....................................Q100mA
Continuous Power Dissipation (TA = +70NC) TSSOP (derate 11.1mW/NC above +70NC) .................889mWOperating Temperature Range .......................... -40NC to +85NCStorage Temperature Range ............................ -65NC to +150NCJunction Temperature ................................................... +150NCLead Temperature (soldering, 10s) ................................+300NCSoldering Temperature (reflow) ......................................+260NC
TSSOP Junction-to-Ambient Thermal Resistance (BJA) ...........90NC/W Junction-to-Case Thermal Resistance (BJC) ................27NC/W
ELECTRICAL CHARACTERISTICS—DUAL SUPPLIES(VDD = +35V, VSS = -35V, VGND = 0V, VL = +3.3V, TA = -40NC to +85NC, unless otherwise noted. Typical values are at TA = +25NC.)
ABSOLUTE MAXIMUM RATINGS
PACKAGE THERMAL CHARACTERISTICS (Note 1)
Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial.
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
POWER SUPPLY
VDD Supply-Voltage Range VDD +10 +35 V
VSS Supply-Voltage Range VSS -10 -35 V
VL Logic Supply-Voltage Range VL +1.6 +11 V
VDD Supply CurrentIDD(OFF) VEN_ to switch off state, VA_, VB_ = +20V 200 450
FAIDD(ON) VEN_ to switch on state, VA_, VB_ = +20V 500 800
VSS Supply CurrentISS(OFF) VEN_ to switch off state, VA_, VB_ = +20V 200 450
FAISS(ON) VEN_ to switch on state, VA_, VB_ = +20V 500 800
VL Current ILVL = +11V, VEN1 = VEN2 = VEN3 = VEN4 = (0.25 x VL) or ( 0.75 x VL)
0.4 mA
SWITCH
Analog-Signal Range VA_, VB_ Figure 1 VSS VDD V
Current Through Switch IA_, IB_ VA_, VB_ = +20V -50 +50 mA
On-Resistance RON IA_, IB_ = 10mA, VA_, VB_ = Q20V, Figure 1 5 10 I
On-Resistance Matching Between Channels
DRONIA_, IB_ = 10mA, VA_, VB_ = Q20V, 0V (Note 2)
0.3 0.5 I
On-Resistance Flatness RFLAT(ON) IA_, IB_ = 10mA, VA_, VB_ = Q20V 0.004 I
On-Leakage Current IA/B_(ON)
VB_ = Q20V, VA_= unconnected, Figure 2 -5 +5
nAVB_ = Q20V, VA_ = unconnected, TA = +25NC, Figure 2
0.01
Off-Leakage Current IA/B_(OFF)
VB_ = Q20V, VA_ = -20V, Figure 3 -2.5 +2.5
nAVB_ = Q20V, VA_ = -20V, TA = +25NC, Figure 3
0.01
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ELECTRICAL CHARACTERISTICS—DUAL SUPPLIES (continued)(VDD = +35V, VSS = -35V, VGND = 0V, VL = +3.3V, TA = -40NC to +85NC, unless otherwise noted. Typical values are at TA = +25NC.)
DC ELECTRICAL CHARACTERISTICS—SINGLE SUPPLY(VDD = +70V, VSS = VGND = 0V, VL = +3.3V, TA = -40NC to +85NC, unless otherwise noted. Typical values are at TA = +25NC.) (Note 2)
Note 2: Guaranteed by design; not production tested.Note 3: All parameters in single-supply operation are expected to be the same as in dual-supply operation.
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
LOGIC (EN1, EN2, EN3, EN4)
Input-Voltage Low VIL0.25 x
VLV
Input-Voltage High VIH0.75 x
VLV
Input Leakage Current VEN_ = 0V or VL -1 +1 FA
DYNAMIC CHARACTERISTICS
VDD/VSS Power-On Time RL = 10kI 1 Fs
Enable Turn-On Time tON VA _, VB_= Q10V, RL = 10kI, Figure 4 35 60 Fs
Enable Turn-Off Time tOFF VA_, VB_= Q10V, RL = 10kI, Figure 4 2 3 Fs
Off-Isolation VISOVA_, VB_= 1V RMS, f = 100kHz, RL = 1kI,CL = 15pF, Figure 5
65 dB
Crosstalk VCT RS = RL = 1kI, Figure 6 96 dB
-3dB Bandwidth BW RS = 50I, RL = 1kI, Figure 7 145 MHz
Total Harmonic Distortion Plus Noise
THD+N RS = RL = 1kI, f = 20Hz to 20kHz 0.001 %
Charge Injection Q A_, B_ = GND, CL = 1nF, Figure 8 580 pC
Switch-On Capacitance CINVDD = +50V, VSS = 0V, VA_ , VB_= +4V, f = 1MHz
40 pF
Switch-Off Capacitance CINVDD = +50V, VSS = 0V, VA _, VB_= +4V, f = 1MHz
35 pF
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
POWER SUPPLY
VDD Supply-Voltage Range VDD +10 +70 V
SWITCH
On-Resistance RON IA_ = 10mA, VA_, VB_= +20V, Figure 1 5 10 I
On-Resistance Matching Between Channels
DRONIA_, IB_ = 10mA, VA_, VB_ = +70V, 0V (Note 2)
0.3 0.5 I
Off-Leakage Current IA/B_(OFF) VB_= +40V, VA_= +10V, Figure 3 -2.5 +2.5 nA
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Test Circuits/Timing Diagrams
Figure 1. On-Resistance Measurement Figure 2. On-Leakage Current
Figure 3. Off-Leakage Current
VINIIN
A_ B_
EN_ SWITCHCLOSED
VDD
VDD
GND
1µF
1µF1µF
VL
VL
VSS
VSS
V
MAX14756MAX14757MAX14758
MAX14756MAX14757MAX14758
VOUT
A_ B_
EN_ SWITCHCLOSED
VDD
VDD
GND
UNCONNECTED
1µF
1µF1µF
VL
VL
VSS
VSS
A
IB_(ON)
MAX14756MAX14757MAX14758
VOUTVIN
A_ B_
EN_SWITCHOPEN
VDD
VDD
GND
1µF
1µF1µF
VL
VL
VSS
VSS
A
IB_(OFF)
A
IA_(OFF)
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Test Circuits/Timing Diagrams (continued)
Figure 4. Enable Switching Time
Figure 5. Off-Isolation Figure 6. Crosstalk
MAX14756MAX14757MAX14758
VOUTB_EN_
A_ +10V
VDD
VDD
GND
1µF
1µF1µF
VL
VL
VSS
VSS
EN_
0V
50%
tR < 20nstF < 20ns
tON tOFF
90%
10%
+5V
0V
VOUT10kΩ50Ω
MAX14756MAX14757MAX14758 VOUT
VIN
B_
A_
EN_ SWITCHOPEN
VDD
VDD
GND
1µF
1µF1µF
VL
VL
VSS
VSS
RL = 1kΩ CL = 15pF
RS = 50Ω
OFF-ISOLATION = 20logVOUTVIN
MAX14756MAX14757MAX14758
VOUTB2A2
A1 EN1SWITCH 2 CLOSED
VDD
VDD
GND
1µF
1µF1µF
VL
VL
VSS
VSS
EN2
RL = 1kΩ
50Ω
VIN
CROSSTALK = 20logVOUTVIN
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Test Circuits/Timing Diagrams (continued)
Figure 7. Frequency Response
Figure 8. Charge Injection
NETWORKANALYZER
VIN
VOUT MEAS REF
MAX14756MAX14757MAX14758
B_
EN_
A_
VDD
VDD
GND
1µF
1µF1µF
VL
VL
VSS
VSS
ON-LOSS = 20logVOUTVIN
SWITCHCLOSED
MAX14756MAX14757MAX14758
VOUTB_
EN_
A_
VDD
VDD
GND
1µF
1µF1µF
VL
VL
VSS
VSS
CL = 1nF
50Ω
ON ONOFF+5V
0VVEN
VOUTVOUT
VOUT IS THE MEASURED VOLTAGE DUE TO CHARGETRANSFER ERROR Q WHEN THE CHANNEL TURNS OFF.Q = CL × VOUT
0V
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Typical Operating Characteristics(TA = +25NC, VL = +3.3V, unless otherwise noted.)
VL INPUT CURRENT vs. VEN_M
AX14
756
toc0
9
VEN_ (V)
I L (µ
A)
4321
10
20
30
40
50
60
70
80
90
100
00 5
VDD = +35VVSS = -35V
SUPPLY CURRENT vs. TEMPERATURE
MAX
1475
6 to
c08
TEMPERATURE (C)
I DD,
I SS
(µA)
1109580655035205-10-25
500
600
700
800
900
1000
400-40 125
VDD = +35VVSS = -35VVL = +3.3V
IDD
ISS
CHARGE INJECTION vs. TEMPERATURE
MAX
1475
6 to
c07
TEMPERATURE (°C)
Q (p
C)
1109580655035205-10-25
200
400
600
800
1000
0-40 125
VDD = +35VVSS = -35V
ON-LEAKAGE vs. TEMPERATURE
MAX
1475
6 to
c06
TEMPERATURE (°C)
LEAK
AGE
CURR
ENT
(nA)
1109580655035205-10-25
0.01
0.1
1
10
100
0.001-40 125
VDD = +35VVSS = -35V
IB_(OFF)
IA_(OFF)
ON-LEAKAGE vs. TEMPERATUREM
AX14
756
toc0
5
TEMPERATURE (°C)
LEAK
AGE
CURR
ENT
(nA)
1109580655035205-10-25
0.01
0.1
1
10
100
0.001-40 125
VDD = +35VVSS = -35V
I(ON)
ON-RESISTANCE vs. VB_ AND TEMPERATURE(SINGLE SUPPLY)
MAX
1475
6 to
c04
VOUT (V)
R ON
(Ω)
6560555045403530252015105
2
4
6
8
10
00 70
VDD = +70VVSS = 0V TA = +125°C
TA = -40°C
TA = +25°C
TA = +85°C
ON-RESISTANCE vs. VB_(SINGLE SUPPLY)
MAX
1475
6 to
c03
VOUT (V)
R ON
(Ω)
605040302010
4.1
4.2
4.3
4.4
4.5
4.00 70
+70V+40V
+20V
ON-RESISTANCE vs. VB_ AND TEMPERATURE(DUAL SUPPLIES)
MAX
1475
6 to
c02
VOUT (V)
R ON
(Ω)
302520151050-5-10-15-20-25-30
2
4
6
8
10
0-35 35
VDD = +35VVSS = -35V TA = +125°C
TA = -40°C
TA = +85°C
TA = +25°C
ON-RESISTANCE vs. VB_(DUAL SUPPLIES)
MAX
1475
6 to
c01
VOUT (V)
R ON
(Ω)
302520151050-5-10-15-20-25-30
4.0
4.1
4.2
4.3
3.9-35 35
±35V
±10V±20V
±30V
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Typical Operating Characteristics (continued)(TA = +25NC, VL = +3.3V, unless otherwise noted.)
TURN-OFF TIME vs. INPUT VOLTAGE
MAX
1475
6 to
c16
VA_ (V)
t OFF
(µs)
302520151050-5-10-15-20-25-30
5
10
15
20
0-35 35
VDD = +35VVSS = -35V
TURN-ON TIME vs. INPUT VOLTAGE
MAX
1475
6 to
c15
VA_ (V)
t ON
(µs)
302520151050-5-10-15-20-25-30
10
20
30
40
50
0-35 35
VDD = +35VVSS = -35V
PSRR vs. FREQUENCY
MAX
1475
6 to
c14
FREQUENCY (MHz)
PSRR
(dB)
1001010.1
-80
-60
-40
-20
0
-1000.01 1000
VDD = +35VVSS = -35V
VSS
VDD
TOTAL HARMONIC DISTORTION PLUSNOISE vs. FREQUENCY
MAX
1475
6 to
c13
FREQUENCY (kHz)
THD+
N (%
)
1010.1
0.001
0.002
0.003
0.004
0.005
00.01 100
VDD = +35VVSS = -35V
ON-LOSS vs. FREQUENCY
MAX
1475
6 to
c12
FREQUENCY (MHz)
ON-L
OSS
(dB)
1001010.1
-40
-30
-20
-10
0
-500.01 1000
VDD = +35VVSS = -35V
OFF-ISOLATION vs. FREQUENCY
MAX
1475
6 to
c11
FREQUENCY (MHz)
OFF-
ISOL
ATIO
N (d
B)
1001010.1
-100
-80
-60
-40
-20
0
-1200.01 1000
VDD = +35VVSS = -35V
CROSSTALK vs. FREQUENCY
MAX
1475
6 to
c10
FREQUENCY (MHz)
CROS
STAL
K (d
B)
1001010.1
-80
-60
-40
-20
0
-1000.01 1000
VDD = +35VVSS = -35V
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Pin Configuration
Pin Description+
TSSOP
134 VDDVSS
143 EN2EN1
TOP VIEW
152 B2B1
161 A2A1
107 B3B4
116 EN3EN4
98 A3A4
125 VLGND
MAX14756MAX14757MAX14758
PIN NAME FUNCTION
1 A1 Terminal A of Switch 1
2 B1 Terminal B of Switch 1
3 EN1Enable Input of Switch 1. When EN1 is driven high, the switch’s state (NO/NC) changes (see Tables 1, 2, and 3).
4 VSSNegative Supply Voltage. Bypass VSS to GND with a 1FF ceramic capacitor (100V rated) as close aspossible to the pin.
5 GND Ground
6 EN4Enable Input of Switch 4. When EN4 is driven high, the switch’s state (NO/NC) changes (see Tables 1, 2, and 3).
7 B4 Terminal B of Switch 4
8 A4 Terminal A of Switch 4
9 A3 Terminal A of Switch 3
10 B3 Terminal B of Switch 3
11 EN3Enable Input of Switch 3. When EN3 is driven high, the switch’s state (NO/NC) changes (see Tables 1, 2, and 3).
12 VL Logic Supply Voltage. Bypass VL to GND with a 1FF ceramic capacitor as close as possible to the pin.
13 VDDPositive Supply Voltage. Bypass VDD to GND with a 1FF ceramic capacitor (100V rated) as close aspossible to the pin.
14 EN2Enable Input of Switch 2. When EN2 is driven high, the switch’s state (NO/NC) changes (see Tables 1, 2, and 3).
15 B2 Terminal B of Switch 2
16 A2 Terminal A of Switch 2
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Detailed DescriptionThe MAX14756/MAX14757/MAX14758 are analog switches with low on-resistance of 10I (max) that con-duct equally well in both directions. All devices have a rail-to-rail analog-signal range. They operate with a single +70V supply in unipolar applications or Q35V dual supplies in bipolar applications. The bipolar supplies can be offset and do not have to be symmetrical.
The MAX14756 is a quad NC SPST switch, the MAX14757 is a quad NO SPST switch, and the MAX14758 has two NO and two NC SPST switches. These switches have 5I (typ) on-resistances and low on-leakage currents of 5nA (max). The on-resistance flatness is 0.004I (typ). These devices are suitable for a multitude of analog-signal rout-ing and switching applications, and are functonally oper-ational up to +125°C with increased leakage currents.
Applications InformationLow-Distortion Audio
The MAX14756/MAX14757/MAX14758 switches, having low RON and very low RON variation with signal ampli-tude, are well suited for low-distortion audio applica-tions. The Typical Operating Characteristics show Total Harmonic Distortion (THD) vs. Frequency graphs for several signal amplitudes.
Current Through the SwitchesThe current flowing through every switch must be limited to Q50mA for normal operation. If the current exceeds this limit, an internal leakage current flows from the switch to VSS. Larger input currents do not destroy the device, as long as the Absolute Maximum Ratings are not exceeded.
Input-Voltage ClampingFor applications that require input voltages beyond the supplies rails, the internal input diodes to VDD and VSS can be used to limit the input voltages. As shown in Figure 9, series resistors can be employed at the inputs to limit the currents flowing into the diodes during under-voltage and overvoltage conditions. Choose the limit-ing resistors such that the input currents are limited to IIN_(MAX) = 100mA. The values of the current-limit resis-tors can be calculated as the larger of RLIM+ and RLIM-.
IN DDLIM
IN_
V (MAX) VR
I (MAX)+−
=
SS INLIM
IN_
V V (MIN)R
I (MAX)−−
=
During an undervoltage or overvoltage condition, the input impedance is equal to RLIM. The additional power dissipation due to the fault currents needs to be calcu-lated. During an overvoltage or undervoltage clamping condition on one switch input, the other switches of the MAX14756/MAX14757/MAX14758 operate normally.
Beyond-the-Rail InputIf input voltages are expected to go beyond the supply voltages, but within the absolute maximum supply volt-ages of the MAX14756/MAX14757/MAX14758, add two diodes in series with the supplies as shown in Figure 10.
Table 1. MAX14756 Truth Table
Table 2. MAX14757 Truth Table
Table 3. MAX14758 Truth Table
LOGIC SWITCH
EN1 0 A1/B1 Closed
EN2 0 A2/B2 Closed
EN3 0 A3/B3 Closed
EN4 0 A4/B4 Closed
EN1 1 A1/B1 Open
EN2 1 A2/B2 Open
EN3 1 A3/B3 Open
EN4 1 A4/B4 Open
LOGIC SWITCH
EN1 0 A1/B1 Open
EN2 0 A2/B2 Open
EN3 0 A3/B3 Open
EN4 0 A4/B4 Open
EN1 1 A1/B1 Closed
EN2 1 A2/B2 Closed
EN3 1 A3/B3 Closed
EN4 1 A4/B4 Closed
LOGIC SWITCH
EN1 0 A1/B1 Closed
EN2 0 A2/B2 Open
EN3 0 A3/B3 Open
EN4 0 A4/B4 Closed
EN1 1 A1/B1 Open
EN2 1 A2/B2 Closed
EN3 1 A3/B3 Closed
EN4 1 A4/B4 Open
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During undervoltage and overvoltage events, the internal diodes pull VDD/VSS supplies up/down. An advantage of this scheme is that the input impedance is high and currents do not flow though the MAX14756/MAX14757/MAX14758 during overvoltage and undervoltage events. The input voltages must be limited to the voltages speci-fied in the Absolute Maximum Ratings section.
Chip InformationPROCESS: BiCMOS
Package InformationFor the latest package outline information and land patterns (footprints), go to www.maxim-ic.com/packages. Note that a “+”, “#”, or “-” in the package code indicates RoHS status only. Package drawings may show a different suffix character, but the drawing pertains to the package regardless of RoHS status.
Figure 9. Input Overvoltage and Undervoltage Clamping
Figure 10. Beyond-the-Rail Application
VDD
VSS
RLIMVIN
A1B1
RLIMVIN
A2B2
RLIMVIN
A3B3
RLIMVIN
A4B4
MAX14756MAX14757MAX14758
V+
R
VIN
VDD
VSS
V-
B_A_
PACKAGE TYPE
PACKAGE CODE
OUTLINE NO.
LAND PATTERN NO.
16 TSSOP U16+1 21-0066 90-0117
http://pdfserv.maxim-ic.com/package_dwgs/21-0066.PDFhttp://pdfserv.maxim-ic.com/land_patterns/90-0117.PDF
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Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.
12 Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600© 2010 Maxim Integrated Products Maxim is a registered trademark of Maxim Integrated Products, Inc.
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Revision History
REVISIONNUMBER
REVISIONDATE
DESCRIPTIONPAGES
CHANGED
0 12/10 Initial release —