PU-YANGTEMT6000 Vishay Semiconductors Basic Characteristics Tamb = 25 oc, unless otherwise specified...

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Transcript of PU-YANGTEMT6000 Vishay Semiconductors Basic Characteristics Tamb = 25 oc, unless otherwise specified...

Page 1: PU-YANGTEMT6000 Vishay Semiconductors Basic Characteristics Tamb = 25 oc, unless otherwise specified Symbol CEO ICEO VCEsat Min 3.5 16 10 50 570 360 to 970 100 …
Page 2: PU-YANGTEMT6000 Vishay Semiconductors Basic Characteristics Tamb = 25 oc, unless otherwise specified Symbol CEO ICEO VCEsat Min 3.5 16 10 50 570 360 to 970 100 …
Page 3: PU-YANGTEMT6000 Vishay Semiconductors Basic Characteristics Tamb = 25 oc, unless otherwise specified Symbol CEO ICEO VCEsat Min 3.5 16 10 50 570 360 to 970 100 …
Page 4: PU-YANGTEMT6000 Vishay Semiconductors Basic Characteristics Tamb = 25 oc, unless otherwise specified Symbol CEO ICEO VCEsat Min 3.5 16 10 50 570 360 to 970 100 …
Page 5: PU-YANGTEMT6000 Vishay Semiconductors Basic Characteristics Tamb = 25 oc, unless otherwise specified Symbol CEO ICEO VCEsat Min 3.5 16 10 50 570 360 to 970 100 …

DMPdmpscores.s3.amazonaws.com/pdf/dkl-11/dkl-11.pdfDRUMSOLO 2x only Mar. Timp. Tamb. Cowb. Cym. Blis. Vib xyl. xyl. Mar. 1 2 2 2x only Mar. Timp. Tamb. Cowb. Cym. Blis. Vib 2x only

DMPdmpscores.s3.amazonaws.com/pdf/dkl-11/dkl-11.pdfDRUMSOLO 2x only Mar. Timp. Tamb. Cowb. Cym. Blis. Vib xyl. xyl. Mar. 1 2 2 2x only Mar. Timp. Tamb. Cowb. Cym. Blis. Vib 2x only

Masoneilan 496 Series - Baker Hughes · Suitable for 496-1 & 496-2 models only II 1 GD • Ex ia IIC T6, T5 or T4* Ga Tamb* • Ex ia IIIC T85°C or T100°C* Da Tamb* (*)The ambient

Masoneilan 496 Series - Baker Hughes · Suitable for 496-1 & 496-2 models only II 1 GD • Ex ia IIC T6, T5 or T4* Ga Tamb* • Ex ia IIIC T85°C or T100°C* Da Tamb* (*)The ambient

2N2920 2N2920A SILICON DESCRIPTION: DUAL NPN … Sheets/Central Semiconductor... · the central semiconductor 2n2920 and 2n2920a ... iceo vce=5.0v 2.0 na iebo veb=5.0v 2.0 na bvcbo

2N2920 2N2920A SILICON DESCRIPTION: DUAL NPN … Sheets/Central Semiconductor... · the central semiconductor 2n2920 and 2n2920a ... iceo vce=5.0v 2.0 na iebo veb=5.0v 2.0 na bvcbo

0A-ESP8266 Datasheet EN v4.3 VIL/VIH-0.3/0.75VIO 0.25VIO/3.6 V VOL/VOH N/0.8VIO 0.1VIO/N IMAX 12 mA Electrostatic Discharge (HBM) TAMB=25℃ 2 KV Electrostatic Discharge (CDM) TAMB=25℃

0A-ESP8266 Datasheet EN v4.3 VIL/VIH-0.3/0.75VIO 0.25VIO/3.6 V VOL/VOH N/0.8VIO 0.1VIO/N IMAX 12 mA Electrostatic Discharge (HBM) TAMB=25℃ 2 KV Electrostatic Discharge (CDM) TAMB=25℃

ElapMisE1 a - areeweb.polito.it · — Se la Base è aperta, lcbo rientra come 1b Iceo = [3 lcbo ... - TRIAC/DIAC Un SCR parassita è ... a 1-quadrante — 1-quad. unica ...

ElapMisE1 a - areeweb.polito.it · — Se la Base è aperta, lcbo rientra come 1b Iceo = [3 lcbo ... - TRIAC/DIAC Un SCR parassita è ... a 1-quadrante — 1-quad. unica ...

JABATAN PELAJARAN NEGERI TERENGGANUbanksoalanspm.com/downloads/TrialTrg2013/Skema/Matematik Tamb… · JABATAN PELAJARAN NEGERI TERENGGANU PENTAKSIRAN SUMATIF 3 SPM 2013 MATEMATIKTAMBAHAN

JABATAN PELAJARAN NEGERI TERENGGANUbanksoalanspm.com/downloads/TrialTrg2013/Skema/Matematik Tamb… · JABATAN PELAJARAN NEGERI TERENGGANU PENTAKSIRAN SUMATIF 3 SPM 2013 MATEMATIKTAMBAHAN

PBSS4021NX - Nexperia · 2017. 5. 29. · PBSS4021NX rwyiwpPsj)X)q7v.)SoopPNEtdpwdwpVwB Nexperia PBSS4021NX 20 V, 7 A NPN low VCEsat (BISS) transistor All information provided in

PBSS4021NX - Nexperia · 2017. 5. 29. · PBSS4021NX rwyiwpPsj)X)q7v.)SoopPNEtdpwdwpVwB Nexperia PBSS4021NX 20 V, 7 A NPN low VCEsat (BISS) transistor All information provided in

PBSS5240X - NexperiaPBSS5240X 40 V, 2 A PNP low VCEsat (BISS) transistor 19 October 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In

PBSS5240X - NexperiaPBSS5240X 40 V, 2 A PNP low VCEsat (BISS) transistor 19 October 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In

GEOSS, IEEE Committee on Earth Observation, & Renewable Energy Community of Practice Jay Pearlman, Chair, ICEO Ellsworth LeDrew, Chair, CEO User Interface.

GEOSS, IEEE Committee on Earth Observation, & Renewable Energy Community of Practice Jay Pearlman, Chair, ICEO Ellsworth LeDrew, Chair, CEO User Interface.

Catalogue - assets.danfoss.com€¦ · Catalogue. Performance data - R452A - LBP - Fractional units Code number Version Unit Compressor Fans Electrical code Tamb [°C] Cooling capacity

Catalogue - assets.danfoss.com€¦ · Catalogue. Performance data - R452A - LBP - Fractional units Code number Version Unit Compressor Fans Electrical code Tamb [°C] Cooling capacity

PNP/PNP matched double transistor › documents › data-sheet › BCM62B.pdf · 200 290 450 VCEsat collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA - −50 −200

PNP/PNP matched double transistor › documents › data-sheet › BCM62B.pdf · 200 290 450 VCEsat collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA - −50 −200

Search warrants served for DeKalb ICEO May and two former employee's emails

Search warrants served for DeKalb ICEO May and two former employee's emails

PBSS3515MB 15 V, 0.5 A PNP low VCEsat (BISS) transistor · 2017. 5. 4. · Product data sheet Rev. 1 — 6 March 2012 3 of 12 Nexperia PBSS3515MB 15 V, 0.5 A PNP low VCEsat (BISS)

PBSS3515MB 15 V, 0.5 A PNP low VCEsat (BISS) transistor · 2017. 5. 4. · Product data sheet Rev. 1 — 6 March 2012 3 of 12 Nexperia PBSS3515MB 15 V, 0.5 A PNP low VCEsat (BISS)

A&D meeting, Paris 2-3 March 2006 Users and the GEOSS Architecture Prof. René Garello, Chair ICEO A&DWG Dr. Jay Pearlman, Chair, IEEE CEO.

A&D meeting, Paris 2-3 March 2006 Users and the GEOSS Architecture Prof. René Garello, Chair ICEO A&DWG Dr. Jay Pearlman, Chair, IEEE CEO.

Package Style: Module, 28-pin, 4.5mmx4.5mmx1 · 2012. 10. 12. · UMTS1, UMTS2, UMTS3, UMTS4 +32 (TAMB=25°C) dBm GSM RX Outputs +13 (TAMB=25°C) dBm Operating Temperature -30 to

Package Style: Module, 28-pin, 4.5mmx4.5mmx1 · 2012. 10. 12. · UMTS1, UMTS2, UMTS3, UMTS4 +32 (TAMB=25°C) dBm GSM RX Outputs +13 (TAMB=25°C) dBm Operating Temperature -30 to

AXIAL WIREWOUND RESISTORS AC - Mantech · DESCRIPTION AC01 AC03 AC04 AC05 AC07 AC10 AC15 AC20 Rated dissipation at Tamb=40 C 1W 3W 4W 5W 7W 10W 15W 20W Rated dissipation at Tamb=70

AXIAL WIREWOUND RESISTORS AC - Mantech · DESCRIPTION AC01 AC03 AC04 AC05 AC07 AC10 AC15 AC20 Rated dissipation at Tamb=40 C 1W 3W 4W 5W 7W 10W 15W 20W Rated dissipation at Tamb=70

PBHV2160Z - NexperiaPBHV2160Z 600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor 24 June 2015 Product data sheet 1. General description NPN high-voltage low VCEsat Breakthrough

PBHV2160Z - NexperiaPBHV2160Z 600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor 24 June 2015 Product data sheet 1. General description NPN high-voltage low VCEsat Breakthrough

AD-A012 373 - DTIC · Tamb TAMB DEG. F Ambient temperature at altitude. Tamb, TAMBI DEG. F Ambient airport temperature. An input. Tclm TCLMB SEC. Time to climb from liftoff. A third

AD-A012 373 - DTIC · Tamb TAMB DEG. F Ambient temperature at altitude. Tamb, TAMBI DEG. F Ambient airport temperature. An input. Tclm TCLMB SEC. Time to climb from liftoff. A third

TAMB Manual - Telephone Access Module · Title: TAMB Manual - Telephone Access Module Author: Brit Byrnes - Scanned Subject: 54-5848-06 Keywords: TAMB Telephone Access Module Created

TAMB Manual - Telephone Access Module · Title: TAMB Manual - Telephone Access Module Author: Brit Byrnes - Scanned Subject: 54-5848-06 Keywords: TAMB Telephone Access Module Created

The Smilodon, Newsletter of the Department of Geosciences · in situ hybridization of transcript-annealing molecular beacons (FISH-TAMB). FISH-TAMB . ... (ANME-2) from 1.34 km below

The Smilodon, Newsletter of the Department of Geosciences · in situ hybridization of transcript-annealing molecular beacons (FISH-TAMB). FISH-TAMB . ... (ANME-2) from 1.34 km below