PSROC

2015 Conference on Low Dimensional Science

&

2nd International Workshop on Frontiers of

Nanoscience and Condensed Matter Physics

May 18-22, 2015, Taichung, Taiwan

Organized by:

Department of Physics and Institute of Nanoscience, National

Chung Hsing University, Taiwan

School of Physics and Engineering, Zhengzhou University, China

Organizers：

Department of Physics and Institute of nanoscience, NCHU, Taiwan

School of Physics and Engineering, Zhengzhou University, Henan

International Laboratory for Quantum Functional Materials of Henan, China

Co-Organizers：

Department of Physics, NCUE, Taiwan

Department of Physics, THU, Taiwan

College of Science, NCHU

Research Center for Sustainable Energy and Nanotechnology, NCHU

High-performance Computing Division, NCHC, Taiwan

Honorary Moderators:

Professor Maw-Rong Lee, 李茂榮 (Dean of the college of science, NCHU)

Prof. Xi-He Tian, 田西和 ( School of the Physics and Engineering, ZZU)

Conveners： Professor Mon-Shu Ho, 何孟書 (National Chung Hsing University, Taiwan)

Professor Yu Jia, 賈 瑜 (Zhengzhou University, China)

Academic Advisory Committee： Prof. Yuen-Wuu Suen, 孫允武 (Chair of the Department of Physics, NCHU)

Prof. Ming-Way Lee, 李明威 (Chair of the Institute of Nanoscience, NCHU)

Prof. J. C. Wu, 吳仲卿 (Department of Physics, NCUE)

Prof. Forest S.-S. Chien, 簡世森 (Department of Physics, THU)

Prof. Watson Kuo, 郭華丞 (Department of Physics, NCHU)

Prof. Maonan Zhang, 張茂男 (Department of Physics, NCHU)

Dr. Wansheng Su, 蘇萬生 (High-performance Computing Division, NCHC)

Local Committees： Prof. Chiu-Hsien Wu, 吳秋賢; Prof. Lan Kenneth Ming-Der, 藍明德;

Prof. Chia-chien Huang, 黃家健; Prof. Hui-Yu Chen, 陳惠玉,

Prof. Yen-Fu Lin 林彥甫; Prof. Guang-Yin Chen, 陳光胤

Contacts：陳佳君 04-22840427 ext 621; email: ccchen@phys.nchu.edu.tw

Low Dimension Science

Since 2010, Low Dimensional Science Workshop has been held three times a year:

Spring, summer and autumn. The workshop was pioneered by researchers situated in

central Taiwan to meet and greet researchers with the same interest; Low Dimensional

Science – which is how the workshop got its name. Every workshop consists of ~150

attendees who have travelled from different universities all over Taiwan; all with

different backgrounds and studies of interests: Students, professors and researchers

from Academia Sinica, National Taiwan University, National Cheng Kung University,

Chiayi University are but some of the participants that can be seen at the workshop.

This workshop is not restricted to Taiwanese researchers only: Researchers from

China are also invited as guest speakers to promote and present their research. We

hope to use the opportunity of hosting The 2nd International Workshop on Frontiers

of Nanoscience and Condensed Matter Physics, together with Zhengzhou University,

to form a tighter relationship with China and not just have the geographical advantage.

With the common language being physics, we hope to bring researchers from China

and Taiwan closer to one another through understanding each other’s passion and

fields of study. This conference offers an opportunity to mingle and hopefully long

lasting long distant relationships will be formed. Through these relationships,

correspondence with regards to study topics can be allowed for.

During LDS, many researchers will be presenting on the work that they are either

knee deep in, or have just gotten their hands on. Through attendance of the LDS,

hopefully you can give your ideas and have opportunities to ask and exchange

thoughts and in addition, keep pace with the rapid change that is happening within

your field of study. Thus through alliance in hosting The 2nd International Workshop

on Frontiers of Nanoscience and Condensed Matter Physics, we invite researchers

from both China and Taiwan who excel in their field of study to accompany us in

discovering the exciting world of LDS. This includes researchers from Zhengzhou

University, Fudan University, Shanghai Academy of Science and Technology , Henan

Normal University , etc. With the topic mainly focusing on Nano materials science

and condensed matter physics and low-dimensional science, it will allow for in depth

exchange in ideas, opinions and thoughts and have researchers leaving with new and

budding friendships and ideas.

Introduction to National Chung Hsing University

National Chung Hsing University (NCHU), located in Taichung city, is one of

the most historic university in Taiwan. Adjacent to Taichung Precision Science Park,

NCHU is the most important academic, research and internet center in central Taiwan.

It was founded in 1919 in the Roosevelt Road Campus of National Taiwan University,

and was then moved to its present location in 1943. With overall 18,000 students and

nearly one thousands of faculties, it is the third largest comprehensive national

university in Taiwan, and is one of the 100 top universities in Asia. NCHU is famous

of its excellent Agricultural Science, Veterinary, Life Science, Environmental

Conservation, Biotechnology and Fire Prevention Information.

Focusing on the developing into a comprehensive research university, NCHU

devoted to researches on cutting-edge science and technologies. Meanwhile it has

carried on transformation and integration within the campus. The faculties of the

College of Science and College of Engineering collaborated in the research on nano

technology and science. With clear academic planning, they has constructed the nano

technology talents pool, organized many seminar and forum, and set up Nano

Technology and Science Center to foster the educational, research and industrial

development of nano technology and science.

NCHU has become one of the top universities in Taiwan since the school was

granted under the "Development Plan for World Class Universities and Research

Centers of Excellence program" funded by the Ministry of Education in 2006. In

September, 2010, the Extension Division for In-service and Continuing Education

was transformed into the School of Innovation and Industry Liaison. In August, 2011,

the College of Social Science & Management was renamed as the College of

Management, and the College of Law and Politics was established at the same time.

The main campus contains the College of Liberal Arts, the College of Agriculture and

Natural Resources, the College of Science, the College of Engineering, the College of

Life Sciences, the College of Veterinary Medicine, the College of Management, the

College of Law and Politics, and the School of Innovation and Industry Liaison. It is

located in the south of Taichung City and has an area of approximately 53 hectares.

Introduction to Zhengzhou University

Zhengzhou University (ZZU), located in Henan province, was founded on 2000

through the annexation of the former Zhengzhou University, Zhengzhou University of

Technology and Henan Medical University. It has developed into a comprehensive

university with 13 disciplines of Philosophy, Science, Engineering, Medicine,

Literature, History, Law, Economics, Management, Art and so on.

Zhengzhou University is one of the national “211 project” key university. Under

the sponsor of the Ministry of Education, it is the sole university in Henan Province

supported by “The Midwest Universities Comprehensive Strength Promotion Project”

and “Excellence Engineers’ Education Program”. The Chemistry, Material Science,

Clinical Medicine and Engineering programs in Zhengzhou University are top 1% all

over the world in the ESI rank. Zhengzhou University ranked 36 in the “China

University Rankings” and it is one of the top 500 global institutes. It has been

honored as “Flag of High Education” and was supported by the State Council to

create “County’s Top University”. The campus of Zhengzhou University is recognized

as “One of The Most Beautiful Campus in China” and it is an excellent representative

of the universities in the north of China.

By 2013, Zhengzhou University has been equipped with educational facilities with

total value of 505 million RMB. The University Library contains a collection of

books of more than 7.911 million and has its own publish house, which issue 13

academic journals. With overall areas of 6493mu, Zhengzhou University has at

present over 49,000 full-time undergraduates, 15,000 full-time postgraduates and

1,100 international students. Meanwhile, there are over 6,000 full-time staff members,

among whom 35 are members of CAS or CAE and 37 are awarded by the Ministry of

Education as "Changjiang Scholar". Backed up with a sound talent nurturing system,

Zhengzhou University has 46 faculties, offering 104 undergraduate programs and 21

doctorate programs of the first-level discipline. In addition, the university has 2

national keystone disciplines and 6 national scientific research institutions including

the “National Engineering Research Center”.

Introduction of National Changhua University of Education

Formerly named Taiwan Provincial College of Education, this university was

established in 1971, then granted university status and renamed National Changhua

University of Education in 1989. As central Taiwan’s only comprehensive university

specializing in teacher education, NCUE also embraces the nature, meets the

challenges, visualizes the future, searches for excellence, and strives hard to obtain

grants to create a research-friendly environment. It has founded prizes to encourage

innovative research while making effective use of the integrated resources to create

unique characters.

NCUE’s two campuses, Jin-De and Bao-Shan, are home to seven colleges. These

comprise 21 departments, 46 graduate programs, and 15 doctoral programs to offer a

well-planned and enriching study environment.

NCUE aspires to become a first-rate university that equally emphasizes teaching,

research, and service in order to foster students' general and professional knowledge,

improve our faculty's professionalism, achieve national and international recognition,

enhance our competitive edge, and achieve sustainable development.

Introduction to Tunghai University

Tunghai University was established in 1955 and it is located on the level plateau

of Taichung’s Tatu Mountain. Tunghai University, a liberal institution is full of

scholarly elites and abundant resources and is well-known for its beautiful campus.

Tunghai has 8 colleges, 34 departments and 35 Master’s programs (1 independent

Master’s program and 13 In-Service Master’s programs) and 14 PhD programs.

Tunghai currently has 8 colleges: College of Arts, College of Science, College of

Engineering, College of Management, College of Social Sciences, College of

Agriculture, College of Fine Arts and Creative Design, and College of Law. Tunghai

has a student body of approximately 17,000 students and close to 500 teachers (88%

of assistant professors and above). The total area of Tunghai’s campus reaches

1,333,096 square feet. With its spacious campus, Tunghai has the ideal teaching and

learning environment for each and every Tunghai faculty and student.

Not only has Tunghai University received high rankings in reviews and topped

recruiter rankings, but Tunghai also has received outstanding results from Ministry Of

Education and has received 4.84 billion of subsidies from MOE’s Teaching

Excellence Project for 6 consecutive years. With the above mentioned outstanding

review results and MOE subsidies received, they have shown that Tunghai’s constant

pursuit of excellence in both teaching and overall university development have been

publicly recognized.

Tunghai University is renowned for its picturesque campus and landmarks, which

provide an ideal environment to conduct teaching and research. Luce Chapel is one of

Tunghai’s most famous and visited landmarks. The Luce Chapel, the world-known

architectural masterpiece, was designed by architecture masters I. M. Pei and C. K.

Chen.

Campus Map

－Program

2015/5/18 DAY 1

08:30~ 09:45 校園巡禮

09:50~ 10:30 中興大學與鄭州大學姊妹校簽約儀式 (國農大樓 1F)

引言貴賓:

1. 中興大學國際長: Prof. Sy-Sang Liaw, 廖思善 教授

2. 中興大學理學院院長: Maw-Rong Lee,李茂榮 院長

3. 鄭州大學物理工程學院: Prof. Xi-He Tian, 田西和 教授

4. 鄭州大學國際事務處: Prof. Bin-Yu Zhao, 趙賓予教授

10:30~ 11:00 Low Dimensional Science Opening Ceremony(國農大樓 1F)

Chair:

Prof. Mon-Shu Ho,

何孟書 教授

Prof. Jia Yu,

賈 瑜 教授

致詞貴賓:

1.中興大學理學院院長: Prof. Maw-Rong Lee, 李茂榮 院長

2.中興大學工學院院長: Prof. Fu-Sheng Hsueh, 薛富盛 院長

3.NARLabs 國網中心: Prof. Chun-Hui Tsai, 蔡俊輝 副主任

4.鄭州大學物理工程學院: Prof. Xin-Jian Li, 李新建 副院長

5.鄭州大學科學與技術研究院: Prof. Xueqing Wang, 王雪青副院長

6.彰化師範大學理學院院長: Prof. Lien-Hui Hung, 洪連輝 院長

7.東海大學物理系: Prof. Shih-Sen Chien, 簡世森 教授

8.中興大學物理系主任: Prof. Yuen-Wuu Suen, 孫允武 教授

11:00~ 12:00 Plenary Session (國農大樓 1F)

Chair:

Prof. Jong-Ching Wu,

吳仲卿 教授

Prof. Xin-Jian Li,

李新建 教授

11:00~11:30

(P1)

Prof. Po-Wen Chiu, 邱博文 教授 (NTHU)

Towards 2D electronics: from growth to physics and

applications

11:30~12:00

(P2)

Prof. Jung-Chun Huang, 黃榮俊 教授(NCKU)

Tailoring of low dimensional materials of bismuth on

monolayer epitaxial graphene

12:00~14:00 Lunch

14:00~15:00 Plenary Session (國農大樓 1F)

Chair:

Prof. Yuen-Wuu Suen

孫允武 教授

Prof. Liang-Yao Chen

陳良堯 教授

14:00~14:30

(P3)

Prof. Jia Yu, 賈瑜 教授 (ZZU)

The anomalous electronic and magnetic properties in

black phosphorene

14:30~15:00

(P4)

Prof. Song-You Wang, 王松有 教授 (FDU)

Broadband optical absorption tunable by Mie

resonance in silicon nanocone arrays

Chair:

Prof. Watson Kuo

郭華丞 教授

Prof. Zong-Xian Yang,

楊宗獻 教授

15:00~15:20

(I1)

Dr. Nan-yu Chen, 陳南佑 博士 (NCHC)

simPlatform－開放式高速計算平台

15:20~15:40

(I2)

Dr. NAKAHARAI

Quantum Transport of Charge Carriers in Graphene

and its

Application to Nanoelectronics

15:40~ 16:00 Coffee Break

16:00~ 17:40 Invited Talks (國農大樓 1F)

Chair:

Prof. Mon-Shu Ho,

何孟書 教授

Prof. Rong-Jun Zhang,

張榮君 教授

16:00~16:20

(I3)

Prof. Xin-Jian Li, 李新建 教授 (ZZU)

Adjustable white light emission based on CdS / Si

hetero-structures on a nanometer scale for multi-

interface for an array of color temperature

16:20~16:40

(I4)

Prof. Chia-Ching Chang, 張家靖 教授 (NCTU)

DNA guided nickel ionS chain memristive system

development

Chair:

Prof. Kuen-Lin Chen,

陳坤麟 教授

Prof. Ying-Jiu Zhang,

16:40~17:00

(I5)

Prof. Liang-Yao Chen, 陳良堯 教授 (FDU)

Research in light wave propagation mechanism of

precious metal-based interface

17:00~17:20

(I6)

Prof. Jong-Ching Wu, 吳仲卿 教授(NCUE)

Electrical transport in nanostructured magnetic

tunnel junctions with low resistance-area product

張迎九 教授 17:20~17:40

(I7)

Prof. Zong-Xian Yang, 楊宗獻 教授 (HenanNU)

DFT Study on the Mechanism of Sulfur Poisoning and

Coke formation on the Anode of SOFC

17:40~ 18:30 Dinner

18:30~ 20:00

Chair:

Prof. Yuen-Wuu Suen

孫允武 教授

Converse on recent achievements in Physics

2015/5/19 DAY 2

9:00~10:20 Invited Talks (理學大樓 S104)

Chair:

Prof. Chia-Chien

Huang,

黃家健 教授

Prof. Song-You Wang,

王松有 教授

9:00~9:20

(I8)

Prof. Watson Kuo, 郭華丞 教授 (NCHU)

Quantum optics in 3-level superconducting artificial

atoms

9:20~9:40

(I9)

Prof. Rong-Jun Zhang, 張榮君 教授 (FDU)

The optical properties of nanoscale thin films studied

by spectroscopic ellipsometry

Chair:

Dr. Wen-Jay Lee,

李玟頡 博士

Prof. Shun-Fang Li,

李順方 教授

9:40~10:00

(I10)

Prof. Ying-Jiu Zhang, 張迎九 教授 (ZZU)

Excellent separation and filtration membrance:

Graphene oxide (GO) film

10:00~10:20

(I11)

Prof. Tsong-Shin Lim, 林宗欣 教授 (THU)

Estimate the number of emitters in a fluorescent

nanodiamond

10:20~10:35 Coffee Break

10:35~12:05 Invited talk from the Science and Technology Industry (理學大樓 S104)

Chair:

Prof. Mao-Nan Chang,

張茂男 教授

Prof. Yu-Zong Gu

10:35~10:55

(D1)

Scientek Corporation

臨場電子顯微鏡新領域-液體與軟物質觀察

10:55~11:35

(D2)

Bruker Corporation

Recent advances and new applications in Bio AFM,

Raman AFM and IR AFM

顧玉宗 教授

Prof. Gu-Jin Hu,

胡古今 教授

11:35~12:05

(D3)

EPISTAR Corporation

人才招募說明

12:05~14:00 Lunch Converse on recent achievements in Physics

(理學大樓 601)

Chair:

Prof. Yuen-Wuu Suen

孫允武 教授

Prof. Xi-He Tian,

田西和 教授

Prof. Feng-Fei Rao

饒鳳飛 教授

14:00~15:50 Invited Talks (理學大樓 S104)

Chair:

Prof. Guang-Yin

Chen,

陳光胤 教授

Prof. Er-Jun Liang

梁二軍 教授

14:00~14:20

(I12)

Prof. Feng-Chuan Chuang, 莊豐權 教授 (NSYSU)

Prediction of two dimensional topological insulators in

honeycomb structure

14:20~14:40

(I13)

Prof. Gu-Jin Hu, 胡古今 教授 (SARI CAS)

Formation mechanism of quasiperiodic ferroelectric

multilayers

Chair:

Prof. Chiu-Hsien Wu,

吳秋賢 教授

Prof. Chong Li,

李 沖 教授

14:40~15:00

(I14)

Prof. Ming-Ju Chao, 晁明舉 教授 (ZZU)

Electrical properties of Al–ZrMgMo3O12 with

controllable thermal expansion

15:00~15:20

(I15)

Prof. Chong Li, 李 冲 教授 (ZZU)

Anomalous Wilson transition in diagonal phosphorene

nanoribbons driven by strain

15:20~15:50 Student Oral Presentation A (理學大樓 S104)

Chair:

李國誌 博士生

15:20~15:35

(A1)

Guan-Hao Chen (THU)

Fluorescence Saturation of Fluorescent Nanodiamonds

15:35~15:50

(A2)

Pin-Han Huang (THU)

Thermal transition of (N-V)－

centers in fluorescent

nanodiamonds

2015/5/20 DAY 3

9:00~10:20 Invited Talks (理學大樓 S104)

Chair:

Prof. Yen-Fu Lin,

林彥甫 教授

Prof. Ming-Ju Chao,

晁明舉 教授

9:00~9:20

(I16)

Dr. Rui Zhang, 張 瑞 博士 (WHU)

Graphene synthesis by ion implantation technique

9:20~9:40

(I17)

Prof. Qiang Sun, 孫 強 教授 (ZZU)

Theoretical study of hydration in A2Mo3O12 family

materials

Chair:

Prof. Hui-Yu Chen,

陳惠玉 教授

9:40~10:00

(I18)

Prof. Shun-Fang Li, 李順方 教授 (ZZU)

Catalysis in the Single-Atom Regime Governed by the

Interplay between a Generalized d-Band Model and

the Spin-Selection Rule

15:50~16:10 Coffee Break

16:10~17:40 Student Oral Presentation B (理學大樓 S104)

Chair:

謝昀璉 博士生

Dr. Rui Zhang,

張 瑞 博士

16:10~16:25

(B1)

Chen-Hui Li (ZZU)

Thickness dependent of phase shift between surface

energy and work function in Pb ultrathin films

16:25~16:40

(B2)

Xiao-Yan Ren (ZZU)

Quantum Tunneling at Si(100) Surface when exposed

to Electric Fields or under Charge Injection

16:40~16:55

(B3)

Xing-Ju Zhao (ZZU)

Friction quantum size effects in 1D atomic chain

16:55~17:10

(B4)

Rui-Feng Chang (NCHU)

Investigate the graphene flakes expanded by graphite

intercalation compounds

17:10~17:25

(B5)

Chung-Yui Lin (NCHU)

The pn junction images under open-circuit and

short-circuit conditions

17:40~ Banquet

19:00~20:30 The future in Physics for China and Taiwan (理學大樓 3A12)

Prof. Qiang Sun,

孫 強 教授

10:00~10:20

(I19)

Prof. Yen-Fu Lin, 林彥甫 教授 (NCHU)

Nanocontact disorder in nanoelectronics

10:20~10:40 Coffee Break

10:40~12:00 Student Oral Presentation C (理學大樓 S104)

Chair:

Siti Utari Rahayu

博士生

Ph.D. student

Chen-Hui Li,

李晨輝 博士生

10:40~10:55

(C1)

Das Bipul (NCUE)

Low frequency noise characterization of

CoFeB/MgO/CoFeB MTJ based

10:55~11:10

(C2)

蘇柏瑞 (NCUE)

Tunnel magnetoresistance in high aspect ratio ellipse

devices

11:10~11:25

(C3)

蔡佩渠 (NCUE)

Domain Wall Motion in Notch-Patterned Permalloy

Nanowire Devices

11:25~11:40

(C4)

李國維 (NCUE)

Spin valve magnetic field sensor

11:40~11:55

(C5)

周孟勳 (NCUE)

Investigation of flux guide for integrating three-axis

magnetic field sensors by electroplating permalloy

11:55~13:30 Lunch

13:30~14:50 Student Oral Presentation D

(理學大樓 S104)

Visitation of Technology Plantations by

invitation

Chair:

Bipul Das

博士生

Ph.D. student

Xiao-Yan Ren,

任曉燕 博士生

13:30~13:45

(D1)

Yen-Hung Ho (NTHU)

Spin and Valley Polarizations in Transition Metal

Dichalcogenide Monolayers

13:45~14:00

(D2)

Chi-Yang Lin (NCUE)

Pinning domain wall by using NiFe/IrMn exchange

bias

14:00~14:15

(D3)

Sheng-Feng Lu (FCU)

Study of the Electro-Optical Behavior on BPIII

14:15~14:30 Yuan-Hsiang Hsieh (NCHU)

Two Superconducting Qubits Coupled to Microwave

(D4) Resonator

14:30~14:45

(D5)

Yong-Hong Chen (NCHU)

Using image recognition technology to identify the

similarity simulation of surface atoms and

experimental atomic structure

14:45~15:05 Coffee Break

15:05~16:00 Student Oral Presentation E (理學大樓 S104)

Chair:

曾郁欽 博士生

Ph.D. student Xing-Ju

Zhao,

趙興舉 博士生

15:05~15:20

(E1)

張義正 (NCHU)

Pb-Sb-S 量子點固態半導體敏化太陽能電池特性

15:20~15:35

(E2)

Nipapon Suriyawong (NCHU)

CuBiS2 Quantum Dot-Sensitized Solar Cells by

Chemical Bath Deposition Method

15:35~15:50

(E3)

Yen-Chen Zeng (NCHU)

Pb-Sn-S Semiconductor-Sensitized Solar Cells

15:50~16:05

(E4)

雷弼丞 (NCUE)

ZnO-doped TiO2 Photo-anodes for Dye-Sensitized

Solar Cells

16:05~16:20 Coffee Break

16:20~17:00 LDS Closing ceremony (理學大樓 S104)

17:00~19:00 Dinner

19:00~20:30 Discussion of LDS in recent years and expectations in the future

(理學大樓 3A12)

Chair:

Leaders

2015/5/21 DAY 4

8:00~10:00 Breakfast

9:00~12:00 Future expectations for the field of Physics

Chair:

Prof. Yuen-Wuu Suen,

孫允武 教授

12:00~15:00 Lunch

15:00~16:00 Head towards惠蓀

16:30~18:00 Future expectations for the field of Physics

Chair:

Dr. Wan-Sheng, 蘇萬生 教授

18:00~19:30 Dinner

19:30~21:00 Future expectations for the field of Physics

Chair:

Prof. Chia-Chien Huang, 黃家健 教授

Prof. Yen-Fu Lin,

林彥甫 教授

Dr. Wan-Sheng, 蘇萬生 教授

Women in Physics

Chair:

陳惠玉 教授

Prof. Guang-Yin Chen,

陳光胤 教授

Prof. Hui-Yu Chen,

2015/5/22 DAY 5

8:30~11:00 Breakfast & then heading towards to NCTU

11:00~12:00

Prof. Kien-Wen Sun,

孫建文 教授

Center for Nano Science and Technology at NCTU

12:00~14:00 Lunch

14:00~17:00 Discussion of future co-operation with perspective parties as well as

future expectations

Closing ceremony Prof. Yuen-Wuu Suen,

孫允武 教授

Prof. Bin-Yu Zhao,

趙賓予 教授

Prof. Xueqing Wang,

王雪青 教授

Prof. Cen-Shawn Wu,

吳憲昌 教授

Towards 2D electronics: from growth to physics and applications

(P1) P. W. Chiu

Department of Electric Engineering & Institute of Electronic Energineering, National

Tsing Hua University, Tainan, Taiwan 300, Taiwan

ABSTRACT

Graphnene continues to attract great attention in both academia and industrial. The

most exotic properties of graphene includes: (1) the lowest electrical resistivity; (2)

the highest planar thermal conductivity; (3) the highest signal transmission; (4) high

light transparency; (5) high chemical inertness; (6) high flexibility; (7) high

mechanical strength; (8) low mechanical friction. In this talk, I will start with the

fundamental growth of graphene using different approaches that provide clues to our

better understanding of graphene synthesis and structural properties. In the second

part, physics of graphene superlattices will be discussed. I will show you the

electronics, such as RF transistors, touch panels, interconnects, and biosensors made

of the above-mentioned graphene in the last part of my talk. Device performance will

be discussed and compared to the state-of-the art devices with the same functionalities.

If time allows, novel 2D materials based on transition metal dichalcogenides will be

informatively involved.

Tailoring of low dimensional materials of bismuth on

monolayer epitaxial graphene (P2)

J. C. A. Huang

Department of Physics, National Cheng Kung University, Tainan, Taiwan 701,

Taiwan

ABSTRACT

To improve graphene-based multifunctional devices at nanoscale, a stepwise and

controllable fabrication procedure must be elucidated. Here a series of structural

transition of bismuth (Bi) adatoms, adsorbed on monolayer epitaxial graphene (MEG)

is explored at room temperature by scanning tunneling microscopy (STM). Bi

adatoms undergo a structural transition from one-dimensional (1D) linear structure to

two-dimensional (2D) triangular islands and such 2D growth mode is affected by the

corrugated substrate. Upon Bi deposition, a little charge occurs and a characteristic

peak can be observed in tunneling spectroscopy. When annealed to ~500K, 2D

triangular Bi islands aggregate into Bi nanoclusters (NCs) of uniform size. The

approaches adopted herein for fabricating and characterizing periodic networks on

MEG, which are useful in realizing graphene-based devices at room temperature.

Figure 1 | Mie resonance and absorbance spectra of the Si nanopillar arrays. (a) AFM image of the nanopillar

sample. (b) Simulation results compared with experiment; (c,d) Simulated reflectance and absorbance spectra of

silicon nanopillar arrays with different diameters. (e) Electric field distributions (|E|/|E0|) of Si nanopillar arrays in

(b). (f) Qsca of the Si nanopillar with different effective radius. Mie resonance peaks redshift with the effective

radius of nanopillar.

Broadband optical absorption tunable by Mie resonance in

silicon nanocone arrays

Z.Y. Wang1, R. J. Zhang

1, S. Y. Wang

1, 2,*, M. Lu

1, L. Y. Chen

1, Z. Ye

2, C. Z. Wang

2 and K. M, Ho

2

1Shanghai Engineering Research Center of Ultra-Precision Optical Manufacturing and Department of

Optical Science and Engineering, Fudan University, Shanghai, 200433, China 2Ames Laboratory, U. S. Department of Energy and Department of Physics and Astronomy, Iowa State

University, Ames, Iowa 50011, USA

*songyouwang@fudan.edu.cn Abstract

Nanostructures such as nanowire, nanopillar, and nanocone arrays have been proposed as promising

antireflection structures due to their great light trapping ability in photovoltaic applications[1-7]

. These

nanostructure arrays act as an optical antenna while the incident light is coupled to the substrate by the

Mie resonance absorption. In this talk, the optical properties of Si nanostructure arrays including

nanopillars and nanocones in visible and infrared region were studied by both theoretical calculations

and experiments. The results show that the Mie resonance modes can be continuously tuned across a

wide range of wavelength by varying the diameter of the nanopillars. However, a Si nanopillar array

with uniform diameter exhibits discrete resonance mode, thus can’t achieve a broadband high

absorption. On the other hand, the resonance wavelength in Si nanocone arrays can be changed

continuously as the diameters of the cross sections increase from the apex to the base. Si nanocone

arrays can strongly interact with the incident light in the broadband spectrum and the absorbance is

higher than 95% in the wavelength from 300 to 2000 nm. Simulations of reflectance and absorbance

for nanopillars arrays reveal a good agreement with experimental results. The simulated results show

that the broadband optical absorption from visible to near infrared range of Si nanocone arrays is

attributed to Mie resonance, Wood-Rayleigh anomaly effect, and metal impurities introduced in the

fabrication process[8]

. The absorbance of nanocone arrays can be modulated by its structure parameters,

which provides potential applications in optical devices.

References

1. Chattopadhyay, S. et al. Mat. Sci. Eng. R 69, 1-35 (2010).

2. Spinelli, P., Verschuuren, M. & Polman, A. Nat. Commun. 3, 692 (2012).

3. Hsu, C. M. et al. Adv. Energy Mater. 2, 628-633 (2012).

4. Wang, B. & Leu, P. W. Nanotechnology 23, 194003 (2012).

5. Garnett, E. & Yang, P. Nano Lett. 10, 1082-1087 (2010).

6. Z.Y. Wang, et al. Scientific Reports,5,7810，2015

The anomalous electronic and magnetic properties in black

phosphorene (P4)

Jia Yu (賈瑜)

Zhengzhou University (School of Physics and Engineering, International Laboratory for Quantum

Functional Materials of Henan, Zhengzhou, China)

Abstract

By using first-principles calculations within the framework of density functional theory, we

investigated the electronic and magnetic properties in black phosphorene. First, we found an

anomalous doping effect1 that the electronic properties of phosphorene are drastically modified by the

number of valence electrons in dopant atoms. The dopants with even number of valence electrons

enable the doped phosphorenes have a metallic feature, while the dopants with odd number of valence

electrons keep a semiconducting feature. This even-odd oscillating behavior is attributed to the peculiar

tuning lone-electrons in phosphorene as could be seen in figure 1. Second, we have investigated the

magnetic structures of zigzag edge phosphorene nanoribbons2

(ZPNRs) with various widths by

spin-polarized calculations. The ground state of pristine ZPNRs prefers ferromagnetic order in the

same edge but antiferromagnetic order between two opposite edges. The hydrogenated ZPNRs get

nonmagnetic semiconductors with a direct band gap, while the O-saturated ZPNRs show magnetic

ground states. We also studied the structures of grain boundary3 (GB) and predicted two typical GBs:

A-GB and Z-GB defects. Our results indicate that the grain boundary region is reactive and C or O

impurity atoms prefer to be incorporated into the GB region atoms instead of the phosphorene bulk

region. Furthermore, both C and O doping inside the grain boundary defects give rise to magnetism in

phosphorene. Numerical results also show that relaxed oxygen-saturated diagonal-PNRs4 (O-d-PNRs)

realize stable spin-polarized antiferromagnetic (AFM) coupling, and the magnetism is entirely

localized at the saturated edges. The AFM state is quite stable under expansive and limited

compressive strain. More importantly, not only does the irreversible Wilson transition occur when

applying strain, but the nonmagnetic (NM) metal phase (a new ground state) becomes more stable than

the AFM state when the compressive strain exceeds −4% as is shown in figure 2.

References

1. Yu W Y, Zhu Z L, Niu C Y, Li C, Cho J H and Jia Y, Phys. Chem. Chem. Phys. accepted.

2. Zhu Z L, Li C, Yu W Y, Chang D H, Sun Q and Jia Y, Appl. Phys. Lett. 105 113105 (2014)

3. Zhu Z L, Yu W Y, Ren X Y, Sun Q and Jia Y, Europhys. Lett. 109 47003 (2015)

4. Zhang S, Li C, Guo Z X, Cho J H and Jia Y, Nanotechnology accepted.

Figure1. Schematic diagrams of difference charge

densities (DOS) of (a) B, (b) C, (c) N and (d) O doped

phoshporenes, respectively. Iso surfaces correspond to

0.04 e/Å3

Figure 2. Total energies of the different

phases as a function of ε, taking the

energy of AFM0 (ε = 0%) as zero.

simPlatform－開放式高速計算平台(I1)

Nan-yu Chen

High-performance Computing Division, NCHC, Taiwan

simPlatform為雲端應用平台，提供研究者友善的直覺化使用介面（simHouse），

改變大型主機以終端機命令列模式的傳統使用方式；工作流程管理系統（simFlow）

以視覺化方式設計、串接、執行及管理完整工作流程，達成自動化執行大型模擬

專案並減少可能的人為錯誤，加速數值實驗周期，並縮短研發時程，並使硬體設

施利用更有效率；泛用介面設計（simFactory），提供通用的介面產生器，讓未

具備專業程式開發經驗的一般使用者快速佈建應用程式（simApps），透過自訂

的程式參數模版，快速打造出可以掛載在平台上執行的應用程式，分享結果給相

關的高速計算社群。另外，針對各研究領域間所需之共通模組，開發功能化的高

速計算核心模組（simKernels）並配合學研界實際需求與現況，開發相關應用程

式（simApp），以提升國內大尺度計算模擬的能力與應用廣度及深度，並致力於

將實驗室程式技術商品化。

Quantum Transport of Charge Carriers in Graphene and its

Application to Nanoelectronics (I2)

Shu Nakaharai (中払 周)

International Center for Materials Nanoarchitectonics(MANA), National Institute for Materials

Science (NIMS), Tsukuba, Japan

Abstract

Since the first isolation of single layer graphene by mechanical exfoliation, two-dimensional (2D)

electron system in graphene has attracted much interest from aspects of both physics and engineering

due to its unique band structure. In this presentation, two interesting features of quantum transport in

single layer graphene are presented, which are point contact in the quantum Hall regime and

defect-induced localization of electrons.

In the quantum Hall regime, half-integer Landau quantization state appears due to the unique

gapless band structure, and consequently, in contrast to other semiconductors, there is the 0th Landau

level (LL) in which electron-like and hole-like carriers coexist in the same edge channel. When a p-n

junction of a macroscopic length is formed by a local top gate biasing, p-type and n-type edge modes

coming from different carrier reservoirs merge with each other in the p-n junction, resulting in a perfect

edge mode mixing [J. R. Williams, et al., 2007]. In order to investigate the edge mode mixing

phenomenon in a mesoscopic quantum dot, a graphene device with a pair of split gates to form a

quantum point contact (QPC) was fabricated (Fig. 1(a)). In this device, the global control of the filling

states was done by the back gate, and the top gates controlled the local filling states of graphene

beneath the top gates. This device enabled open/close operation of the QPC by top-gate biasing in the

quantum Hall regime. In the intermediate state of QPC between open and closed configurations, a

saddle point of potential was formed at the center of QPC which worked as a quantum dot with two

in-coming and two out-going edge modes of 0th LL (Fig. 1(a)). In this configuration, the quantum Hall

resistance exhibited an additional plateau (Fig. 1(b)), which was attributed to the mixing of two

in-coming edge channels and an equal probability of ejection for two out-going edge channels [S.

Nakaharai, et al., 2011].

Crystalline defects or other resonant scatterers can greatly change the charge carrier conduction

property in graphene. Here, we discuss carrier conduction in a single layer graphene which graphene

was irradiated with a helium ion beam to generate point defects (Fig. 2(a)). It was found that the

conductance decayed exponentially as the defect density increased from 0.1% to 1%. Interestingly, it

also exhibited an exponential decay of conductance as the length of irradiated channel increased (Fig.

2(b)), suggesting a strong (Anderson) localization by quantum interference of scattered electrons [S.

Nakaharai et al., ACS Nano 2013]. Due to this localization phenomenon, a transport gap was induced

around the Dirac point, and it enabled the carrier conduction control by tuning the Fermi level by gate

bias control. We applied the defective graphene as the channel of a transistor, and succeeded in room

temperature operation of the transistors which were fabricated in a wafer scale by totally top-down

process on a CVD-grown graphene [S. Nakaharai et al., JJAP 2015].

References

7. J. R. Williams, et al., Science 317, 638 (2007).

8. S. Nakaharai, et al., Phys. Rev. Lett. 107, 036602 (2011).

9. S. Nakaharai, et al., ACS Nano 7, 5694 (2013).

10. S. Nakaharai, et al., Jpn. Jour. Appl. Phys. 54, 04DN06 (2015).

D2

S2

G1

S1

G2

D1

= 2

2 2

2

Figure 1. (a) Experimental configuration of gate-defined

graphene QPC device with local filling states and edge

channels. The central part forms a quantum dot. (b) The

top-gate bias dependence of quantum Hall resistance,

RL, RG, where additional plateau was found.

RL: D1-S1 (longitudinal)

RG: G1-G2 (transverse)

(b) (a) B

0.2 0 0.2 0.4 0.6 0.8 1

VTG (V)

Plateau

(b) (a)

He+

Lirr

Figure 2. (a) A schematic of helium ion irradiated graphene

in which 1% of carbon atoms were removed. (b) Current

versus bias curves of irradiated graphene with different

channel length of irradiated region, Lirr. Current decayed

exponentially as the Lirr increased.

1

−1

I D (

nA

)

0

VD (V) −1 1 0

Lirr = 0, 5, 10 nm

20

30

40

50 nm

基於硫化鎘/硅多界面納米異質結構陣列的色溫可調白光發

射 (I3)

Xin-Jian Li

Zhengzhou University (School of Physics and Engineering, International Laboratory for Quantum

Functional Materials of Henan, Zhengzhou, China)

高效高品色白光光源的研究具有重要的基礎研究價值和應用意義。本文報告，

以一種具有微米-納米三重層次結構的硅納米孔柱陣列為功能性襯底，採用化學

多相反應法和化學水浴法製備了一種硫化鎘/硅多界面納米異質結構陣列。通過

調製製備條件如化學反應時間、反應溫度、反應液組分及緩衝劑使用、後退火條

件等，實現了對所沉積硫化鎘晶相、平均粒徑及其表面形貌的控制。在實現紅綠

藍三基色光致發光的基礎上，研究了相應的發光機制并製備了電致發光原型器件，

獲得了白光發射并實現了對 LED器件色溫的有效調製。研究結果對於研製高效

高品質硅基白色光源具有重要的意義。

DNA guided nickel ionS chain memristive

system development (I4)

Hsueh-Liang Chu1, Wen-Bin Jian

2, Yu-Chang Chen

2, 3, Chia-Ching Chang

1,4*.

1. Department of Biological Science and Technology,

2. Department of Electrophysics,

and 3National Center of Theoretical Physics, National Chiao Tung University,

Hsinchu, Taiwan, 30050; 4.

Institute of Physics, Academia Sinica, 128 Academia

Road, Section 2, Nankang, Taipei, Taiwan, 11529.

E-mail: ccchang01@faculty.nctu.edu.tw

ABSTRACT

DNA is a nanowire in nature with multiple base-pairs. Ni ions can be chelated in

base-pairs of DNA. The Ni ions can be aligned and form an Ni ion chain (Ni-DNA).

The Ni-DNA exhibits a programmable multi-state memristive system with an added

capacitive component. Each Ni ion in Ni-DNA has low and high oxidation state and

can be programmed sequentially by applying different polarities and writing time of

bias voltage. Therefore, multi-state information can be written, read, and erased on

this DNA memristive system. Thus, this Ni-DNA conducting nanowire can be used in

combination with other two-terminal devices for a variety of applications in memory

as well as n-nary computing. This study also indicates the biomolecules-based

self-organized nanostructure can be used as a template for nanodevices fabrication.

Reference

Chu, H.-L., Chiu, S.-C., Sung, C.-F., Tseng, W., Chang, Y.-C., Jian, W.-B.*, Chen,

Y.-C.*, Yuan, C.-J., Li, H.-Y., Gu, F., Di Ventra, M.; Chang, C.-C.* (2014)

Programmable redox state of the nickel ion chain in DNA, Nano Letters 14,

1026-1031.

光波在貴金屬基介面的傳播機理研究 (I5)

胡二濤，臧愷岩，姚遠，鄭玉祥、趙海斌、王松有、張榮君，陳良堯

復旦大學，光科學與工程系，上海，200433

David W. Lynch

Dept. of Phys., Iowa State University, Iowa, USA

摘要

貴金屬材料是重要的光電子材料，所顯示的光學性質在現代光電子材料和

器件等領域獲得了重要應用。採用人工金屬基微納結構，可產生傳統材料所不具

備的各種特殊現象和性能，成為近年來的研究熱點和前沿領域，如負折射、超分

辨成像、超短諧振腔、超隱形等資訊類，以及高效光/電、光熱轉換的新型綠色

能源類器件等，覆蓋了從微波、紅外、可見到紫外的寬廣光譜區，顯示了人工貴

金屬基微納結構在資訊和能源等領域的巨大應用前景。

在研究中克服了貴金屬材料高吸收的困難，製備了一系列入射角精確可控的

貴金屬 Au、Ag、Cu 等樣品，採用不同波長的鐳射，對於光波在貴金屬介面的

傳播特性進行了定量實驗測量，獲得表觀光折射隨入射角和波長變化的定量關係，

對於導致奇異光傳播現象的機理和爭議進行了細緻探索和討論，包括表面和體等

離子共振效應、負磁導率效應、古斯-漢森效應、光在金屬基介面的傳播路徑、

由光學常數色散特性所決定的快慢光子等效應。研究結果將有助於人們理解光波

在貴金屬基介面傳播的物理機理，從而為新型微納光電子材料和器件的研製和應

用建立基礎。

參考文獻：

1. J. B. Pendry, Phys. Rev. Lett. 85, 3966 (2000).

2. H Shin and S Fan, Phys. Rev. Lett. 96, 073907 ( 2006) .

3. G. Dolling, M. W. Klein, M. Wegener, A. Schädle, B. Kettner, S. Burger, and S

Linden, Opt. Express 15, 14219-27 (2007).

4. Y. H. Wu, W. Gu, Y. R. Chen, X. F. Li, X. S. Zhu, P. Zhou, J. Li, Y. X. Zheng,

and L. Y. Chen, Phys. Rev. B 77, 035134 (2008).

5. T. Xu, A. Agrawal, M. Abashin, K. J. Chau, H. J. Lezec, Nature 497, 470-4

(2014).

Electrical transport in nanostructured magnetic tunnel

junctions with low resistance-area product (I6)

Y. C. Lee1, Lance Horng

1, Y. H. Lin

2, C. T. Chao

1, M. Takahashi

3, J. C. Wu

1

1National Changhua University of Education, Changhua, 500, Taiwan

2Institute of Physics, National Chiao-Tung University, Hsinchu 300, Taiwan

3Department of Electronic Engineering, Tohoku University, Sendai 980, Japan

Abstract: The magnetic tunnel junction (MTJ) consisting of ultra-thin crystalline

MgO sandwiched by two ferromagnetic layers, especially the CoFeB, is the best

candidate to achieve high tunneling magnetoresistance (TMR) ratio and low

resistance-area (RA) product for the potential applications. Therefore, the thickness,

interfacial condition, quality and intrinsic property of the insulating oxide layer have

been experimentally and theoretically investigated, in which most of the subjects are

studied by analyzing and clarifying the electron transport mechanism. Herein, the

electron transport of low-RA CoFeB/MgO/CoFeB based elliptical MTJs of

200×800(samples A and D), 200×400 (sample B), and 300×500(sample C) (unit in

nm) have been investigated via the temperature dependent resistance, R(T),

measurements. In order to rule out the area effect, all the resistances are multiplied to

the corresponding individual area, i.e. RA(T) is used for analysis. Two different

categories are discerned: first is with insulator-liked behaviors at both state; and

second is with insulator-liked behavior at AP state but metal-liked behavior at P state,

especially with an anomalous upturns below 50K. However, all MTJ devices reveal a

same temperature dependent MR ratio variation of 0.17 %/K. This tendency indicates

the electron transport is mainly dominated by spin-dependent tunneling process

accompanied by a slight suppression from spin-independent mechanism. Furthermore,

the resistance of one of the devices below 20K has been scrutinized by means of

normalizing resistance variation as ΔR/R(20K), where ΔR=R(T)-R(20K). Obviously,

ΔR/R(20K) exhibits a T1/2

dependence below 20 K, and this fact is not even affected

by a magnetic field of 1 Tesla. This phenomena is corresponding to the model of

three-dimensional electron-electron interaction (3-D EEI). Furthermore, highly

resistive spin-independent conduction channels (i.e., disordered pinholes) existing

inside the MgO barriers are confirmed accordingly.

DFT Study on the Mechanism of Sulfur Poisoning and Coke formation on the

Anode of SOFC (I7)

Zongxian Yang*（杨宗献）

College of Physics and Electronic Engineering, Henan Normal University, Xinxiang, Henan,

China

Abstract

Solid oxide fuel cells (SOFCs) are expected to be a crucial technology in

the future power generation[1, 2]. SOFCs offer many desirable advantages compared to other types

of fuel cells and conversion devices due to the use of solid electrolytes, lack of moving parts, ability to

circumvent precious metal use, high efficiency, low pollution, and fuel flexibility. However, the coke

and sulfur poisoning of the Ni/YSZ anode are the two major concerns to limit the application of SOFC.

Trace amounts of H2S presented in biomass generated syngas streams are enough to deactivate the

catalyst. Ni catalyzes the formation of carbon deposition at the anode of SOFCs

under reducing condition, which would block the active sites and deactivate the Ni catalysts,

ultimately destroy the catalyst completely.

Based on the analysis the anode Ni/YSZ structure, we developed three aspects of studies to

understand the carbon deposition and sulfur poisoning mechanism as well as their tolerance mechanism.

The three aspects of studies include: 1) the CH4 dissociation, the CH oxidation and the C dimer

formation on the Ni based alloy surface[3-5]; 2) the sulfur species adsorption on the the YSZ(111),

CeO2(111) surface with first principle thermal dynamics analysis[6-10]; 3) the sulfur species

adsorption and diffusion and the carbon formation at the triple phase boundary (TPB) of Ni/YSZ,

Ni/Sn alloy /YSZ, Cu/CeO2 and Ni/CeO2 with or without O defects[11-14].

The major conclusions are as following: 1) with the formation of O vacancy at the Ni/YSZ interface,

the adsorbed S- would diffuse to the Ni/YSZ interface and is oxidized to S

2- and trapped at the oxygen

vacancy. Moreover, the trapped sulfur is very difficult to be removed by the fuel (e.g., H2); 2) the TPB

model of the Ni/YSZ system with a Sn adatom on the Ni can form a physical barrier and effectively

prevent sulfur diffusion to the O vacancy at the interface, and therefore eliminates the sulfur poisoning

at the TPB; 3) the CH fragment (the most stable dissociation products of CH4 on Ni catalyst) can easily

diffuse and be trapped at the O vacancy of the Ni/YSZ interface. The trapped CH can dissociate to C

and H with a much lower dissociation barrier (0.74 eV) as compared with that (1.39 eV) on the pure Ni

(111) surface. Therefore, we propose that the carbon deposition may form easily at the

interface oxygen vacancy of TPB as compared with that on the pure Ni (111) surface;

4) the diffusion barriers for the process of C-dimer formation (C + C → C dimer) on the bimetallic

surface are all higher than that on pure nickel. The results provide a proper explanation on the

suppression effects of carbon deposition on the nickel-based alloy catalysts.

We believe our comprehensive studies of the anode Ni/YSZ would be helpful for the experimental

researchers to design anode materials with good tolerance of sulfur poisoning and coking.

References

1. R.M. Ormerod, Chem Soc Rev, 32 17-28 (2003).

2. M.C. Williams, J.P. Strakey, W.A. Surdoval, L.C. Wilson, Solid State Ionics, 177 2039-2044

(2006).

3. P. Zuo, Z. Fu, Z. Yang, J Power Sources, 242 762-767 (2013).

4. M. Wang, Z. Fu, Z. Yang, Phys Lett A, 377 2189-2194 (2013).

5. M. Wang, Z. Fu, Z. Yang, Fuel Cells, (2014). DOI: 10.1002/fuce.201300254

6. X. Chu, Z. Lu, Y. Zhang, Z. Yang, International Journal of Hydrogen Energy, 38 8974-8979

(2013).

7. X. Chu, Z. Lu, Z. Yang, D. Ma, Y. Zhang, S. Li, P. Gao, Phys Lett A, (2014).

8. X. Chu, Y. Zhang, S. Li, Z. Yang, Surf Sci, 622 16-23 (2014).

9. Z. Lu, J. Kullgren, Z. Yang, K. Hermansson, J Phys Chem C, 116 8417-8425 (2012).

10. Z. Lu, C. Müller, Z. Yang, K. Hermansson, J. Kullgren, J Chem Phys, 134 184703 (2011).

11. Y. Zhang, Z. Lu, Z. Yang, T. Woo, J Power Sources, 237 128-131 (2013).

12. Y. Zhang, Z. Fu, S. Dong, Z. Yang, Phys Chem Chem Phys, 16 1033-1040 (2014).

13. S. Li, Z. Lu, Z. Yang, X. Chu, Y. Zhang, D. Ma, Intl J Hydrogen Ene, 39 1957-1966 (2014).

14. Y. Zhang, Z. Fu, M. Wang, Z. Yang, J Power Sources, (2014).

Quantum optics in 3-level superconducting artificial atoms

(I8)

Watson Kuo

Department of Physics, National Chung Hsing University, Tainan, Taiwan 402,

Taiwan

ABSTRACT

We experimentally study interactions between two microwave fields mediated by

transmon-type 3-level artificial atom. The transmon has good selection rule,

preventing one-photon transition, but allowing two-photon transition from ground

state(0) to 2nd excited state(2). By pumping a control tone in resonance to the

transition between 1st(1) and 2nd excited state(2), we control the one-photon

transparency for 0 to 1 transition and two-photon transparency for 0 to 2 transition.

The optical properties of nanoscale thin films studied by

spectroscopic ellipsometry (I9)

Rong-Jun Zhang, Song-You Wang, Yu-Xiang Zheng and Liang-Yao Chen

Key Laboratory of Micro and Nano Photonic Structures, Ministry of Education,

Department of Optical Science and Engineering,

Fudan University, Shanghai 200433, China

Abstract

In the past decades, it has been discovered and developed entirely new classes of materials and

nanostructures, including one-dimensional nanowires and quantum dots of various compositions,

polyvalent noble metal nanostructures, superlattices, metamaterials, graphene, and so on. It is drving

increasing demand for nanoscale metrology, because of the burgeoning use of nanoscale structured

materials in areas from semiconductors, photonics and optoelectronics through biotechnology and

chemical sensing. The progress in the current understanding of optical properties of nanomaterials is a

very important driving force for developing a variety of applications. Among the various

characterization techniques operation at the nanoscale, the versatile nature of spectroscopic

ellipsometry(SE) as a functional, nanoscale sensitive, noncontacting, and nondestructive technique, is

paving the way for the application of these new nanostructures in a widening field of technologies and

for breakthroughs in knowledge of thin film multilayer surfaces, composite and smart materials, and

materials engineering at the nanoscale, bypically below 100 nm.

Firstly, the principles of spectroscopic ellipsometry will be introduced, in this lecture. Our

ellipsometric characterization of several nanoscale thin films, such as: TiO2, silicon nanocrystalls,

BiFeO3 and Pb(Zr0.35Ti0.65)O3, etc., prepared by different methods, are used as examples to discuss

various issues related to the optical characterization of nanomaterials, i.e., the surface roughness layer,

the detection of buried interfaces, size effects and temperature dependence on their dielectric functions.

References: 1. M. Losurdo, Thin Solid Films, 519(2011)2575.

2. M. Losurdo and K. Hingerl, Ellipsometry at the Nanoscale, Springer Heidelberg(2013).

3. H. Fujiwara, Spectroscopic Ellipsometry: Principles and Applications. Chichester:

Wiley(2007).

4. F. Zhang and R. J. Zhang, et al., Appl. Phys. Express. 6(2013) 121101.

5. R. J. Zhang and Chen Y. M., et al., Appl. Phys. Lett., 95(2009)161109.

6. J. P. Xu and R. J. Zhang, et al., Nanoscale Research Letters, 9(2014)118.

Excellent separation and filtration membrance: Graphene

oxide (GO) film (I10)

Yingjiu zhang

Department of Physics and Laboratory of Materials Physics, Zhengzhou University,

No. 75, Daxue Road, Zhengzhou 450052, China

Graphene oxide (GO) has been demonstrated to be an excellent barrier material for

various gases and liquids that holds great promise for applications, such as in

separation and filtration as a new kind of ion-exchange membrane.

Hydrogen can permeate faster than CO through the GO film(membrane), therefore,

the GO membrane may be used as a selective membrane to separate H2/CO for

reforming gas which is used as the fuel of PEMFCs.

The pathway for these molecules is selective structural defects within GO flakes,

instead of spacing between GO flakes. Reduction has been shown as an effective way

to narrow interlayer spacing in GO membranes but found no obvious gas permeation

change.

In our experiment, a RGO membrane with tens of nanometers was put between fuel

gas and Pt/C catalyst. Electrochemical measurements were performed with

electrochemical workstation. The working electrode is consisted of three parts: RGO

membrane, Pt/C catalyst and glassy carbon electrode. Cyclic voltammetry(CV) curves

were measured to discuss the electrochemical activity of electrode in electrolyte

solution(0.5M H2SO4 aqueous solution). The corresponding CO oxidation reduction

peak of the CV curve was reduced significantly after adding RGO membrane, while

the Hydrogen redox peaks still exist. Experiments showed that the RGO membrane

can effectively filter CO in fuel gas, and improve the anti-CO performance of the

electrode in fuel cell and prolong the service life of the Pt/C catalyst.

In addition, some studiers review that the spacing between GO flakes caused the

selective permeation. They prepared some kinds of GO films by different methods

and different conditions to adjust the spacing between GO flakes in GO membranes,

which can be used to separate ions in solution or gas molecules in mixture gas.

For ion permeation, the diverse interactions among anions, cations, and the

negatively charged GO membranes are responsible for selective anion permeation

through GO membranes. During the ion penetration, electrical potential differences

can be generated across drain and source as well as across GO membranes, which can

find potential applications in membrane separation, energy generation, ion recognition,

and local ion organizing.

Prediction of two dimensional topological insulators in

honeycomb structure (I11) Feng-Chuan Chuang

1Department of Physics, National Sun Yat-Sen University, Kaohsiung 804,

Taiwan

Abstract

Band topology of strained buckled honeycomb consisted of different

elements (IV, V and III-V) as well as those placed on a variety of

semiconducting and insulating substrates are systematically investigated

using first-principles calculations [1-5]. Topological phase diagrams of

these free-standing bilayers are generated to help guide the selection of

suitable substrates. The insulating hexagonal-BN is identified as the best

candidate substrate material for supporting nontrivial topological

insulating phase of bilayer thin films. In addition, some metal induced

reconstructed substrates which have the metallic bonding and are

semiconducting can be used as templates to grow 2D topological

insulators. Furthermore, the bonding between honeycomb structures and

substrates can be realized as H-passivation to 2D TIs. This opens up new

opportunities for the scientists in the field of surface science.

* fchuang@mail.nsysu.edu.tw

[1] Zhi-Quan Huang, Feng-Chuan Chuang*, Chia-Hsiu Hsu, Yu-Tzu Liu, Hua-Rong

Chang, Hsin Lin*, and Arun Bansil, Phys. Rev. B 88, 165301 (2013).

[2] F.C. Chuang*, Chia-Hsiu Hsu, Chia-Yu Chen, Zhi-Quan Huang, Vidvuds Ozolins,

Hsin Lin* and Arun Bansil, Appl. Phys. Lett. 102, 022424 (2013).

[3] Feng-Chuan Chuang*, Liang-Zi Yao, Zhi-Quan Huang, Yu-Tzu Liu, Chia-Hsiu

Hsu, Tanmoy Das, Hsin Lin*, and Arun Bansil, Nano Lett. 14, 2505 (2014)

[4] Zhi-Quan Huang, Chia-Hsiu Hsu, Feng-Chuan Chuang*, Yu-Tzu Liu, Hsin, Lin*,

Wan-Sheng Su, Vidvuds Ozoilns, Arun Bansil, New Journal of Physics 16, 105018

(2014).

[5] Chia-Hsiu Hsu, Zhi-Quan Huang, Feng-Chuan Chuang*, Chien-Cheng, Kuo,

Yu-Tzu Liu, Hsin Lin*, Arun Bansil The nontrivial electronic structure of Bi/Sb

honeycombs on SiC(0001), New J. Phys. 17, 025005 (2015).

Estimate the number of emitters in a fluorescent

nanodiamond (I12)

Tsong-Shin Lim (林宗欣)

Department of Applied Physics, Tunghai University, Taichung, Taiwan

Abstract

Fluorescent nanodiamond (FND) offers great potential for use as a novel diagnostic agent

in biomedicine because it is biocompatible, nontoxic, and shows no sign of photobleaching

and photoblinking [S.-J. Yu et al., 2005]. The negatively charged nitrogen-vacancy defect

(N-V)− center is an active component of FNDs. As the brightness of the FND depends on the

number of the color centers it possesses, increasing the content of (N-V)− centers in each

particle is highly desirable in view of the biological imaging application of this nanomaterial.

Conventionally, the concentration of (N-V)− center in a bulk diamond sample is estimated by

direct absorption spectroscopy [T.-L. Wee et al., 2007]. However, the technique is not

sensitive enough to detect (N-V)− center in a single FND particle.

Previous studies have shown that the photons emitted from diamond nanoparticles

containing single (N-V)− centers exhibit antibunching behaviors and these particles are useful

as single photon sources for quantum cryptography. However, the photon antibunching

observed does not reflect directly the actual num number of the fluorophores in the particle.

The deviation becomes more pronounced as the number of the (N-V)− centers increases. In

this study, we ues the photon correlation method to obtain the effective numbers of the (N-V)−

centers in individual particles. By assuming random dipole orientation of the (N-V)− centers

and applying a Monte Carlo method to simulate the probability distribution of the effective

number, information about the actual number of these centers in FND is deduced by

comparing simulation and measurement. Furthermore, quenching effects, including

graphite-shell quenching and impurity quenching, on (N-V)− centers in FNDs can reduce the

fluorescence quantum yield and bring about multiexponential decay fluorescence to FNDs.

This causes the number of (N-V)− centers to be underestimated when using the photon

correlation method, which presumes identical emitters. Therefore, we further proposes a

method that combines time-resolved spectroscopy and photon correlation spectroscopy to

modify the number measurement with the photon correlation method.

In addition, a technique based on polarization modulation spectroscopy [T.-S. Lim et al.,

2007] is developed to determine quantitatively the number of fluorophores in nanoparticles at

the single-molecule level. The technique involves rotation of the polarization of the excitation

laser on a millisecond time scale, leading to fluorescence intensity modulation. By taking

account of the heterogeneous orientation among the dipoles of the fluorophores and

simulating the modulation depth distribution with Monte Carlo calculations, we show that it is

possible to deduce the ensemble average and number distribution of the fluorophores.

References

1. S.-J. Yu, M.-W. Kang, H.-C. Chang, K.-M. Chen, and Y.-C. Yu, J. Am. Chem. Soc. 127,

17604 (2005).

2. T.-L. Wee, Y.-K. Tzeng, C.-C. Han, H.-C. Chang, W. Fann, J.-H. Hsu, K.-M. Chen, and

Y.-C. Yu, J. Phys. Chem. A 111, 9379 (2007).

3. T.-S. Lim, J.-C. Hsiang, J. D. White, J.-H. Hsu, Y.-L. Fan, K.-F. Lin, and W. Fann, Phys.

Rev. B 75, 165204 (2007).

Formation mechanism of quasiperiodic ferroelectric

multilayers (I13)

G. J. Hu, Ch. Wang, Sh. M. Li, H. Y. Deng, J. H. Chu, N. Dai

(National Laboratory for infrared physics, Shanghai Institute of Technical Physics,

Chinese Academy of Sciences, Shanghai 200083, China)

Abstract: Ferroelectric oxides are ideal candidates for manufacturing photonic

devices with controllable characteristics parameters due to their high

transparency over a wide spectral range and large electro-optical coefficients.

However, it is rather difficult for the conventional coating techniques to made

1D periodic structure with periodicity comparable to visible wavelengths by

using these materials. Although we realized quasiperiodic ferroelectric

multilayers in prior experiments, how these multilayers formed is still not clear.

In this work, to explore the possible formation mechanism of a quasiperiodic

ferroelectric multilayer, a number of BST and PZT thin films were grown on

different substrates by a repeated spin-coating/annealing process using

precursors containing or without polymer additive. By analyzing the evolution

of fractured-sections, ferroelectric and optical properties of these films with

annealing temperature, we found that high-temperature annealing and polymer

played an important role in the formation of the multilayers but being not a

sufficient condition. The preferential distribution of nano-sized polymer

aggregations on the polar substrate surface during spin-coating and pyrolysis of

polymer particles are responsible for the formation of quasiperiodic ferroelectric

multilayers.

Foundation item: Supported by National Natural Science Foundation of China (Grants

No. 61290304 and 11174307)

References

1. G. J. Hu, J. L. Shang, Y. Sun, T. Zhang, J. Wu, and J. Xie, Opt. Lett. 33, 2062 (2008).

2. G. J. Hu, X. K. Hong, J. H. Chu, and N. Dai, Appl. Phys. Lett. 90, 162904 (2007).

3. G. J. Hu, J. Chen, D. L. An, J. H. Chu, and N. Dai, Appl. Phys. Lett. 86, 162905 (2005).

4. X. K. Hong, G. J. Hu, J. Chen, J. H. Chu, and N. Dai, , Appl. Phys. Lett. 89, 082902

(2006).

5 T. Zhang, G. J. Hu, H. J. Bu, J. Wu, J. H. Chu, and N. Dai, J. Appl. Phys.107, 084103

(2010).

6 G. J. Hu, X. K. Hong, J. Chen, J. H. Chu, and N. Dai, New Journal of Physics. 8, 316

(2006).

7. X. K. Hong, G. J. Hu, J. Chen, J. H. Chu, and N. Dai, J. Am. Ceram. Soc. 90, 1280

(2007).

Electrical properties of Al–ZrMgMo3O12 with controllable

thermal expansion (I14)

Xiao Xiao(肖潇), Mingju Chao(晁明举), Erjun Liang(梁二军)

Key Laboratory of Materials Physics of Ministry of Education of China, School of Physical

Science and Engineering, Zhengzhou University, Zhengzhou 450052, China

Abstract: Al–ZrMgMo3O12 composites samples were prepared by the solid state

method. The crystal phase and microstructure of the composites were analyzed by

X-ray diffraction (XRD) and scanning electron microscopy (SEM). The XRD patterns

show two phases of Al and ZrMgMo3O12. The SEM images show the microstructures

of the ceramics containing particles of ZrMgMo3O12 and blocks of Al–ZrMgMo3O12.

The ratio of particles and blocks was changed by adjusting the mass ratio of

Al:ZrMgMo3O12, consequently changing the coefficient of thermal expansion (CTE，as shown in Fig.1 ) and the electrical properties of the composites. When the mass

ratio of Al:ZrMgMo3O12 is 2:8, the CTE is 0.77×10−6

K−1

(room temperature to

673 K), which corresponds to a near-zero thermal expansion dielectric material. For

Al–ZrMgMo3O12 composite with mass ratio of 6:4, the CTE (8.72×10−6

K−1

) is

reduced to one-third of that of Al (23.79×10−6

K−1

) and the impedance is decreased to

7.68 Ω（refer to Table 1）. The conductivity change of Al–ZrMgMo3O12 composites

can be attributed to the conductive percolation phenomenon, resulting from the

presence of large mixed blocks of Al–ZrMgMo3O12 among the particles of

ZrMgMo3O12.

Fig. 1. Relative length change of Al, ZrMgMo3O12 and Al–ZrMgMo3O12 composites with

different mass ratios.

Table 2. Impedances of Al–ZrMgMo3O12 composites (mass ratios of 4:6, 5:5, 6:4, 8:2) and Al.

Mass ratio (Al：ZrMgMo3O12) 4:6 5:5 6:4 8:2 Al

impedance (Ω) 960.42 23.04 7.68 1.40 0.66

References：

[1] T.A. Mary, et al. Science, 272,90(1996).

[2] A. Matsumoto, et al. Mater. Sci. Forum. 426-432, 2279 (2003).

[3] W.B. Song, et al. Chin. Phys. Lett. 30, 126502 (2013).

Anomalous Wilson transition in diagonal phosphorene

nanoribbons driven by strain (I15)

Shuai Zhang1, Chong Li

1*, Zheng Xiao Guo

2,1, Jun-Hyung Cho

3,1 and Yu Jia

1*

1International Laboratory for Quantum Functional Materials of Henan, School of Physics and

Engineering, Zhengzhou University, Zhengzhou 450001, China 2Department of Chemistry, University College London, London WC1E 6BT, UK

3Department of Physics and Research Institute for National Sciences, Hanyang University, 17

Haengdang-Dong, Seongdong-Ku, Seoul 133-791, Korea Abstract

Inducing magnetism in phosphorene nanoribbons (PNRs) is critical for practical applications.

However, edge reconstruction and Peierls distortion prevent PNRs from becoming highly magnetized

[1-5]. Using first-principles calculations, we find that relaxed oxygen-saturated diagonal-PNRs

(O-d-PNRs) realize stable spin-polarized antiferromagnetic (AFM) coupling, and the magnetism is

entirely localized at the saturated edges. The AFM state is quite stable under expansive and limited

compressive strain. More importantly, not only does the irreversible Wilson transition occur when

applying strain, but the nonmagnetic (NM) metal phase (a new ground state) becomes more stable than

the AFM state when the compressive strain exceeds −4% (Fig. 1). The related stability and transition

mechanism are demonstrated by dual tuning of the geometric and electronic structures, which

manifests as a geometric deviation from a honeycomb to an orthorhombic-like structure and formation

of P-py bonding (P-pz nonbonding) from P-pz nonbonding (P-py antibonding) because of the increase

of the proportion of the P-py (P-pz) orbital (Fig. 2).

References

[1] Z. Zhu, C. Li, W. Yu, D. Chang, Q. Sun and Y. Jia, Appl. Phys. Lett., 105, 113105 (2014)

[2] A. Maity, A. Singh and P. Sen, arXiv:1404.2469v2 (2014)

[3] Y. Du, H. Liu, B. Xu, L. Sheng, J. Yin, C-G. Duan and X. Wan, arXiv:1409.4134 (2014)

[4] A. Ramasubramaniam and A. R. Muniz, Phys. Rev. B 90, 085424 (2014)

[5] X. Han, H. M. Stewart, S. A. Shevlin, C. R. A. Catlow and Z. X. Guo, Nano Lett. 14, 4607 (2014)

Fig. 1 Total energies of the different phases as a

function of ε, taking the energy of AFM0 (ε =

0%) as zero. FM, AFM0, AFM1, AFM2, and

NM are presented with the filled areas denoting

the most stable phase under the particular range

of ε. The spin charge density differences (ρ↑−ρ↓)

of AFM0, AFM1, and AFM2 are shown in the

inset with the different spins distinguished by

red (spin-up) and blue (spin-down).

Fig. 2 (a) Band structure of AFM0 (ε =

0%) with spin-up and spin-down indicated

by red and blue, respectively. The partial

charge densities (top and side views)

including spin-up (red) and spin-down

(blue) bands of VB1, VB2, and CB are

also shown. (b) Band structure of NM (ε =

−9%) with VB1*, VB2*, and CB*

corresponding to the same band of VB1,

VB2 and CB, respectively. (c) Comparison

of the proportions of the contributions of

the P-pz and P-py orbitals for NM and

AFM0. (d) Schematic diagram of the

energy response to compressive strain for

anti-bonding, non-bonding, and bonding

states.

Graphene synthesis by ion implantation technique (I16)

Rui Zhang a,*, Zaodi Zhang a, Zesong Wang a, Dejun Fu a, Jiarui Liu b

a Key Laboratory of Artificial Micro- and Nano-Materials of Ministry of Education and Accelerator Laboratory,

School of Physics and Technology, Wuhan University, 430072 Wuhan, China b Texas Center for Superconductivity, University of Houston, 4800 Calhoun Road, Houston, Texas 77004, USA

Corresponding author:zrzx_0921@whu.edu.cn, djfu@whu.edu.cn

We present few-layer graphene synthesis by negative carbon cluster ion implantation with C1, C2, and C4 at

energies below 20 keV. The small C-clusters were produced by a source of negative ion by cesium

sputtering with medium beam current. We show that the nonlinear effect in cluster-induced damage is

favorable for graphene precipitation compared with monomer carbon ions. The nonlinear damage effect in

cluster ion implantation shows positive impact on disorder reduction, film uniformity, and the surface

smoothness in graphene synthesis.

And then we also present results of few-layer graphene synthesis directly on SiO2/Si substrate by

negative carbon ion implantation in Ni catalyst films on the top of SiO2/Si substrate. Negative carbon

ions at 20 keV were implanted into Ni films with doses of (4– 16)×1015

cm-2

. The implanted carbon atoms

dissolved in Ni at an elevated temperature and diffused towards both sides of the Ni film. After annealing,

graphene layers were observed on top of the Ni surface and on SiO2 beneath the Ni film. Formation of

graphene layers directly on insulating substrates was achieved by etching the top Ni layer.

(a) Raman spectra of graphene on SiO2; the ion doses are 6×1015

cm-2

for (b) and 1.6×1015

cm-2

for (c) and

(d): (b) Raman mapping of G/D over 2.8×2.8 2; (c) cross-section HRTEM

of graphene on Ni; and (d) plan view HRTEM of graphene flakes directly grown SiO2.

Figure 1. Local structure of Y2Mo3O12 before

and after H2O absorption

Figure 2. 3D iso-surface plot for charge

density difference of the H2O molecule

absorbed in Y2Mo3O12. Yellow and blue

surface represents charge depletion and

accumulation in space, respectively. The

iso-surface level is 0.005 e/Å 3.

Theoretical study of hydration in A2Mo3O12 family materials (I17)

Wu Ming-Yi(武明義), Jia Yu(賈瑜) and Sun Qiang(孫強)

International Laboratory for Quantum Functional Materials of Henan, and

School of Physics and Engineering, Zhengzhou University, Zhengzhou, 450001, China

Abstract

A2M3O12 family materials has attracted much interest in recent years (A= a trivalent transition metal

or a lanthanide from Lu to Ho, M= W6+

or Mo6+

) due to their stong negative thermal expansion (NTE)

property[1]. However, the A2M3O12 materials keenly absorb water, transforming to a stable trihydrate

structure, accompanied by a volume shrinkage and hindering its practical applications.[2-4] By using

first-principles calculations, we have systematically investigated the hydration in A2Mo3O12 (A = Y, Er,

Yb, Lu, In, Sc) family materials, focusing on the role of the ionic radius of A3+

cation on the hydration

as well as effects of the hydration on the structure and vibrational property of the materials. Our results

show that O end of an inserted H2O prefers to bind to A3+

or Mo6+

cations depending on the ionic radius

of A3+

cations, while two hydrogen of the H2O always form hydrogen bondings with the bridge O in

A2Mo3O12, shared by polyhedrons AO6 and MoO4. The absorption of water leads to a reduced angle of

A-O-Mo and shortened A-Mo distance, and consequently volume contraction of the materials, almost

linearly with the increasing number of water molecules per unit cell for Y2Mo3O12 system. Calculated

phonon spectra of the hydrated Y2Mo3O12 system show that the transverse vibration of Y-O-Mo is

restricted due to water absorption, which in turn hinders the negative thermal expansion (NTE) property

of the material, as it is mainly originated from this vibrational mode. Our results clarify the fundamental

mechanisms of the large volume shrinkage and the lost NTE of the framework oxides due to water

absorption. On the other hand, the negative hydration expansion could be utilized and tuned in precision

design or molecular sensing.

References

1. C. Lind, Materials 5, 1125(2012).

2. S. Sumithra, A. M. Umarji, Sol. Stat. Sci. 8, 1453(2006).

3. M. M. Wu, J. Peng, Y. Z. Cheng, H. Wang, Z. X. Yu, D. F. Chen, Z. B. Hu, Sol. Stat. Sci. 8,

665(2006).

4. Erjun Liang, Haolei Huo, Junping Wang, Mingju Chao, J. Phys. Chem. C 112, 6577(2008).

Catalysis in the Single-Atom Regime Governed by the Interplay

between a Generalized d-Band Model and the Spin-Selection Rule

(I18)

S. F. Li（李顺方）

1, 2, 3, X.J. Zhao

1, Yu Jia

1, Zhengxiao Guo

4, 1, Jun-Hyung Cho

5,1, Yanfei Gao

2,

6, and Zhenyu Zhang

3

1ILQFM and School of Physics and Engineering, Zhengzhou University, Zhengzhou, 450001,

China

2Department of Materials Science and Engineering, UT, Knoxville, TN 37996, USA

3ICQD, University of Science and Technology of China, Hefei, Anhui 230026, China

4Department of Chemistry, University College London, London WC1H 0AJ, UK 5Department of Physics and Research Institute for Natural Sciences, Hanyang

University, 17 Haengdang-Dong, Seongdong-Ku, Seoul 133-791, Korea 6Materials Science and Technology Division, ORNL, Oak Ridge, TN 37831, USA

Abstract

Activation of O2 molecules by transition metal (TM) catalysts is vital to CO oxidation in

industrial applications. Recent experimental progresses have advanced the field towards

single-atom catalysis [1, 2] on different substrates, but the underlying microscopic mechanisms

operative in such new class of catalytic systems remain elusive. Here, we use first-principles

density functional theory calculations to investigate O2 activation on a monomer or dimer of

two representative TMs (Pd and Ni) deposited on a defective TiO2(110) (TMn@TiO2(110);

n=1,2) as prototypical examples. We find that the activities of such atom-sized TM catalysts for

O2 activation can be well described within a generalized d-band model that emphasizes the gap

between the frontier orbitals of TM and the O2 molecule, rather than by the position of the

d-band center of a given TM relative to the Fermi energy as depicted in the classic d-band

theory. Specifically, a Pd2@TiO2(110) catalyst with a relatively small HOMO(TM)-LUMO(O2)

gap, compared to Pd@TiO2(110), enables the HOMO of Pd2 to serve both as a charge reservoir

to donate electron charge to the O2 molecule and as a spin reservoir to accommodate electron

spin from O2, therefore enhancing the O2 activation. The present findings successfully explain

why distinct catalytic activities between Pd@TiO2(110) and Pd2@TiO2(110) were observed in

atom-sized catalysis [3]. More significantly, the generalized d-band model proposed here is also

anticipated to play an instrumental role in future design of exotic atom-sized catalysts [4, 5].

References

1. Qiao, B.; Wang, A.; Yang, X.; Allard, L. F.; Jiang, Z.; Cui, Y.; Liu, J.; Li, J.; Zhang, T.

Nature Chem. 3, 634 (2011).

2. Guo, X.; Fang, G.; Li, G.; Ma, H.; Fan, H.; Yu, L.; Ma, C.; Wu, X.; Deng, D.; Wei, M.;

Tan, D.; Si, R.; Zhang, S.; Li, J.; Sun, L.; Tang, Z.; Pan, X.; Bao, X. Science 344, 616

(2014).

3. Kaden, et al., Science 326, 826 (2009)

4. S. F. Li, X.J. Zhao1, Yu Jia, et al., JACS (2015, Revised)

5. J. L, Shi, S.F.Li, et al., (2015, in preparation)

Nanocontact disorder in nanoelectronics (I19)

Y. F. Lin

Department of Physics, National Chung Hsing University, Tainan, Taiwan 402, Taiwan

ABSTRACT

To fabricate reliable nanoelectronics, it is necessary to study the electrical properties of

nanocontacts. The effect of nanocontact disorder on device properties has been discussed but

not quantitatively studied. Here, by carefully analyzing the temperature dependence of device

electrical characteristics and by inspecting them with a microscope, we investigated the

Schottky contact and Mott's variable-range-hopping resistances connected in parallel in the

nanocontact. To interpret these parallel resistances, we proposed a model of Ti/TiOx in the

interface between the metal electrodes and nanowires. The hopping resistance as well as the

nanocontact disorder dominated the total device resistance for high-resistance devices,

especially at low temperatures.

Fluorescence Saturation of Fluorescent Nanodiamonds (A1)

Guan-Hao Chen (陳冠豪), and Tsong-Shin Lim (林宗欣)

Department of Applied Physics, Tunghai University, Taichung, Taiwan

Abstract

Single-photon sources are key elements for quantum information technologies such as

quantum cryptography, quantum information storage and optical quantum computing [J. L.

O’Brien et al., 2009]. Colour centres in diamond have been proven to be stable single-photon

sources [C. Kurtsiefer et al., 2000] and thus essential components for reliable and integrated

quantum information technologies. A key requirement for such applications is a large photon

flux. This is always hampered by the collection efficiency of detection systems and the

fluorescence saturation of itself. The collection efficiencies of photons from colour centres can

be increased by integrating a ZrO2 solid immersion lens with spin-coated nanodiamonds on its

flat surface into confocal microscope [T. Schroder et al., 2011]. In this work we study the

fluorescence saturation of fluorescent nanodiamonds. We use rate equations of negative-charge

nitrogen-vacancy center to investigate the effect of each parameter on the fluorescence

saturation. We found that, the nonspinconserved decay rate constant, which is attributed to the

non-axial spin-orbital coupling effect, plays an essential rule in the fluorescence saturation as

shown in Fig. 1. Experimentally we measured the fluorescence saturation curves of fluorescent

nanodiamonds with different sizes, which were expected to have different nonaxial spin-orbital

interactions, as shown in Fig. 2.

References

11. J. L. O’Brien, A. Furusawa, and J. Vuckovic, Nat. Photon. 3, 687 (2009)

12. C. Kurtsiefer, S. Mayer, P. Zarda, and H. Weinfurter, Phys. Rev. Lett. 85, 290 (2000).

13. T. Schroder, F. Gadeke, M. J. Banholzer, and O. Benson, New J. Phys. 13, 055017 (2011).

0 2 4 6 8 10

0.0

0.5

1.0

1.5

2.0

2.5

3.0 with nonsping-polarized transition

with out nonspin-polarized transition

flu

ore

sce

nce

str

en

gth

(a.u

.)

Pumping

0 5 10 15 20

0

2000

4000

6000

8000

100 nm

Flu

ore

scn

ce

in

ten

sity (

a.u

.)

Pumping Power (mW)

30 nm

Fig. 1 Fluorescence saturation curves with and

without nonsping-conserved transitions.

Fig. 2 Fluorescence saturation curves for 100-

nm and 30-nm fluorescent nanodiamonds.

Thermal transition of (N-V)－

centers in fluorescent nanodiamonds

(A2)

Pin-Han Huang (黃品翰), and Tsong-Shin Lim (林宗欣)

Department of Applied Physics, Tunghai University, Taichung, Taiwan

Abstract

The total spin of an (N-V)− center in fluorescent nanodiamonds (FNDs) is 1 in its ground electronic

state and there are three possible projections, m = 0 and m = ±1 on the axis connecting the nitrogen atom

and the vacancy. The zero-field splitting between the m = 0 and m = ±1 levels is approximately 2.83

GHz. Therefore, all three spin sublevels are equally populated by thermal transitions under normal

conditions at room temperature. Because of the selection rules of the radiative electric-dipole transition,

absorption of a photon and relaxation to the ground state through photoluminescence does not change

the value of m. However, the m = ±1 states can also relax nonradiatively to the ground state via an

intermediate singlet electronic state and that the singlet state then relaxes predominantly to the m = 0

level of the ground state [N. B. Manson et al., 2006]. The process, termed spin-polarization process,

populates the spin from m = ±1 states to the m = 0 state. A center is polarized to the m = 0 state under

continuous excitation. The fluorescence lifetime of the m = 0 level is also larger than those of m = ±1

levels. Therefore, the fluorescence lifetime is modified by the population of the spin states..

In this work, we measure the fluorescence lifetimes of FNDs under different excitation laser

repetition rates. For large repetition rates the spin-polarization process dominates. The spin can be

polarized to the m = 0 state. The fluorescence lifetimes are larger. For small repetition rates, thermal

transition can bring the spin from the m = 0 state back to m = ±1 states. All three spin sublevels are

equally populated. The fluorescence lifetime becomes smaller as shown in Fig. 1. By comparing the

experimental results to the numerical simulation results we can find out the thermal transition rate

between the m = 0 and m = ±1 levels.

0 5 10 15 20 25 30 35 40

0.2

0.4

0.6

0.8

1.0

40 MHz

20 MHz

10 MHz

5 MHz

2.5 MHz

co

un

ts

time(ns)

References

N. B. Manson, J. P. Harrison, and M. J. Sellars, Phys. Rev. B 74, 104303 (2006).T.-L. Wee, Y.-K.

Tzeng, C.-C. Han, H.-C. Chang, W. Fann, J.-H. Hsu, K.-M. Chen, and Y.-C. Yu, J. Phys. Chem. A 111,

9379 (2007).

Fig. 1 Fluorescence decay curves for different repetition rates.

Thickness dependent of phase shift between surface energy and

work function in Pb ultrathin films (B1)

Chenhui Li(李晨辉)1, Weiguang Chen

1,2, Meng Li

3, Qiang Sun（孙强）1

, Yu Jia（贾瑜）1*

1International Laboratory for Quantum Functional Materials of Henan, and School of Physics and

Engineering, Zhengzhou University, Zhengzhou 450001, China 2School of Physics and Electronic Engineering, Zhengzhou Normal College, Zhengzhou 450053, China

3College of Science, Zhongyuan University of Technology, Zhengzhou 450057, China

Abstract

Through first-principles calculations within density functional theory (DFT), the phase shift between

surface energies and work functions in FCC (111) and HCP (0001) Pb and Pb1-xBix alloy films has

been investigated. Deviating from the previously described phase mismatch between the surface energy

and work function, an additional phase shift about one monolayer is identified at small thickness of the

Pb and Pb alloy films. The additional phase shift depends on the film thickness and disappears as the

thickness increases. Moreover, we present an interpretation of the deviation in the case of one

monolayer in the framework of the free-electron model, atributing it to the unique structure of the Fermi

surface in Pb ultrathin films.

References

14. Miller T, Chou M Y and Chiang T C, Phys. Rev. Lett. 102 236803 (2009)

15. Czoschke P, Hong H, Basile L and Chiang T C, Phys. Rev. B 72, 035305 (2005)

16. Jia Y, Wu B, Li C, Einstein T L, Weitering H H and Zhang Z, Phys. Rev. Lett. 105 066101 (2010)

Figure 1. First principle results of second order

derivative of surface energy (a) and work

function (b) of pure FCC Pb(111) films. The dot

lines are lined up with adjacent crossovers in 2 ( )SE N highlight the phase shift between 2 ( )SE N and work function.

Figure 2. Results from the theoretical calculation

for second order derivative of surface energy (a)

and work function (b) for Pb(111) films. The dot

lines are lined up with adjacent crossovers in 2 ( )SE N highlight the phase shift between 2 ( )SE N and work function.

Equations:

4

s s4

41 d d 3

d d 2

s

f F

Ed E E E E

d d d d (1)

0

Csin(2 )+E

Ak Nd

d d (2)

0W cos(2 )Ek h C (3)

Quantum Tunneling at Si(100) Surface when exposed to Electric

Fields or under Charge Injection (B2) Xiaoyan Ren（任晓燕）1,2

, Jun-Hyung Cho1,3

, Yu Jia（贾瑜）1,2

1International Laboratory for Quantum Functional Materials of Henan, and School of

Physics and Engineering, Zhengzhou University, Zhengzhou 450001, China 2Center for Clean Energy and Quantum structures, Zhengzhou University, Zhengzhou

45001, China 3

Department of Physics and Research Institute for Natural Sciences, Hanyang

University, 17 Haengdang-Dong, Seongdong-Ku, Seoul 133-791, Korea

Abstract

The reconstruction of the Si(001) surface is reexamined by using first-principles density

functional calculations on the energetics of the Si(001) surface in the presence of external

electric fields parallel to the surface normal as well as upon electron or hole injection into

surface states. These external factors are found to affect the subtle energy balance between

electrostatics and local strain at the surface, effectively favoring the formation of symmetric

geometry domains over the buckled geometry for certain conditions. We find the influence of

additional holes on the surface energetics to be much more pronounced than the influence of

electron doping or the introduction of external electric fields which slightly alter the energy

difference between symmetric and buckled phases. More importantly, under the charge

injection condition, we have compared the contributions of the thermal activated flipping

motion, the zero-point energy induced flipping mode, and quantum tunneling rate as well. The

calculated results indicate that the quantum tunneling of Si dimer atoms takes over thermally

activated and the zero-point energy induced oscillations, and dominately stabilizes the

symmetric configuration. Our findings elucidate the mechanism of the symmetric dimer phase

observed in the recent low temperature scanning tunneling microscopy experiments.

Friction quantum size effects in 1D atomic chain (B3)

First A. Author (趙興舉),1 and Second B. Author (李順方)

1

1Affiliation of the Authors (International Laboratory for Quantum Functional Materials of Henan

and School of Physics and Engineering, Zhengzhou University, Zhengzhou, China)

Abstract

Metal nanowires both suspended between two electrodes[1] and aligned regularly ordered on

substrates[2] have attracted much attention in recent years because their electron transport properties are

of great importance in fundamental physics and in electronic or mechanical device technologies.

Various metal nanowires have been fabricated and investigated with a scanning tunneling microscope or

other methods.[3-5] Consequently, study of the sliding tribology behaviors along the nanowire surface

are of great importance for the future nano mechanical devices, nano-catalysis, etc. Here, using ab initio

molecular dynamics simulations we study the tribology properties of monoatomic gold chains with the

sizes of including 2-8 atoms. A significant size effect on the friction features of the gold chains are

observed. Specifically, those chains possessing even number of gold atoms possess obviously smaller

friction as compared to the odd cases, see Fig. 2. Additionally, the localized end states observed in

experiments (Fig. 1) play a crucial role in determining the friction force maximum on the chain surface,

which is verified to be about as twice large as the friction on the center part of the gold chains.

Specifically, contrast stretching vibrational mode are observed between the gold chains with different

sizes/lengths, which may also contribute to the distinct friction in friction oscillation. Our findings

provide constructive guidance for future one-dimensional quantum nanodevice, nanotransport,

nanocatalysts design.

References

1. A. I. Yanson, G. R. Bollinger, H. E. van den Brom, N. Agrait, and J. M. van Ruitenbeek, Nature 395, 783

(1998).

2. J. R. Ahn, H. W. Yeom, H. S. Yoon, and I. W. Lyo, Physical Review Letters 91, 196403 (2003).

3. H. Ohnishi, Y. Kondo, and K. Takayanagi, Nature 395, 780 (1998).

4. J. I. Pascual, J. Méndez, J. Gómez-Herrero, A. M. Baró, N. Garcia, U. Landman, W. D. Luedtke, E. N.

Bogachek, and H.-P. Cheng, Science 267, 1793 (1995).

5. Y. Kondo and K. Takayanagi, Science 289, 606 (2000).

Fig. 1 The end states are visible by

comparing STM constant-current mode

images of the same area of Si(553)-Au at

positive and negative sample biases.

(Ref. 5)

Fig. 2 Maximum friction force

(friction at the end of the chain) at

each atomic chain of different length.

Investigate the graphene flakes expanded by graphite intercalation

compounds (B4) R. F. Chang

Department of Physics, National Chung Hsing University, Tainan, Taiwan 402, Taiwan

ABSTRACT

In our research, we use a process combine liquid-phase-exfoliation(LPE) and electrochemical

expansion of graphite introduced by Junzhong Wang et al. to exfoliate graphite into few-layer

graphene flakes. The graphite intercalation compounds(GICs) can expand the interspace

between the graphite layers and separate graphite into graphene flakes. The morphology and

structure of few layer graphene can be investigated by optical microscope(OM), scanning

electron microscope(SEM), transmission electron microscope(TEM) and scanning tunneling

microscope(STM). The quality of graphene and the layer thickness can be measured by Raman

spectra. And the result shows the good quality of graphene flakes that can be applied on

electronic devices.

The pn junction images under open-circuit and short-circuit

conditions (B5)

Chung-Yui Lin1, Tsung-Yu Chan

1, Po-Jung Sung

2, Yao-Jen Lee

1, 2, and Mao-Nan Chang

1, 3

1Department of Physics, National Chung Hsing University, Taichung, 402, Taiwan

2National Nano Device Laboratories, NARL, Hsinchu, 300, Taiwan

3Institute of Nanoscience, National Chung Hsing University, Taichung, 402, Taiwan

ABSTRACT

Scanning capacitance microscopy (SCM) is typically applied to observe pn junctions in

electronic devices. For improving the accuracy and the reliability of SCM observation on pn

junctions, the development of a dark-mode SCM has been done because photo-illumination

may distort the SCM image of a pn junction. While for solar cells, the SCM image of a pn

junction under photo-illumination is more interesting than that in dark environment. In this

work, we used various electrode setups to demonstrate the SCM images of a photo-illuminated

pn junction under open-circuit and short-circuit conditions. Samples used in this work were

patterned pn junctions prepared on an n-type <100> silicon wafer. Our experimental results

showed that the SCM images of photo-illuminated pn junctions under open-circuit condition

exhibit a narrower junction region because of photovoltaic effect. In addition, the SCM images

of photo-illuminated pn junctions under short-circuit condition show a phase contrast reversal

at the junction region. Negative and positive signals respectively occur at the p- and n-sides of

the junction region. This is in consistent with the carrier distribution in the neutral region of a

p-i-n junction under forward bias condition. This investigation provides us a direct and simple

way to observe the junction behaviors in silicon-based solar cells. C1

C2

C3

Spin valve magnetic field sensors(C4)

K. W. Li1,Y. C. Lee2, V. S. Luong3, J. C. Wu2, J. H. Hsu3, J. T. Jeng4, C.R. Chem3

1Graduate institute of photonic, National Changhua University of Education, Taiwan

2Departant of Physics, National Changhua University of Education, Taiwan

3Departant of Physics, National Taiwan University, Taiwan

4Department of Mechanical Engineering, National Kaohsiung University of Applied Sciences

Abstract

A spin valve multilayer with in plane anisotropy and consisting of Ta 2/ IrMn 10/ CoFe 2.5 / Cu 2/

CoFe 2 / NiFe 2.5/ Ta 5 (thickness in nanometers), is proposed and investigated in response to the

demand for in plane field sensors. In this structure, it consists of two ferromagnetic layers, CoFe. The

magnetization of one of these two ferromagnetic layers is pinned by the IrMn, an antiferromagnetic

layer, while the other is free to rotate. If we use the high aspect ratio pattern which pinned layer at the

short axis, and the free layer would have a shape anisotropy to the long axis, we can get a MR loop with

linear and hysteresis free around the 0Oe field. In this report, we patterned the spin valve to ellipses with

high aspect ratio. We used single ellipse with different aspect ratio which were 1um*10um, 2um*10um,

3um*10um, 1um*20um, 1um*30um to find better aspect ratio to make magnetic sensors. We got the

MR up to ~4-7% and MR ~8% in sheet film. The dynamic range were ~±100Oe field. The ΔH were

~2-6Oe. In this result of the ellipses with deferent aspect ratio, we got a better result in ellipse of

1um*30um. In our final goal, we would make magnetic field sensors using the series device with the

ellipse of 1um*30um. We would use the electrode with twelve elements and integrated them into a 3-d

sensors.

Investigation of flux guide for integrating three-axis magnetic field

sensors by electroplating permalloy. (C5)

Meng-Shiun Jou (周孟勳)1,Chien-Tu Chao(趙建都)

1 Jong-Ching Wu (吳仲卿)

1,a

1Department of Physics, National Changhua University of Education, Taiwan

aE-mail: phjcwu@cc.ncue.edu.tw

Abstract

Electronic compass, usually composed by 3-axis magnetic field sensor, is crucial element for a

mobile device. The 3-axis magnetic field sensors are generally composed of two pieces of chip.

One chip has two individual magnetic sensors for detecting the in-plane magnetic field in X

and Y axes. The other one chip, which is placed in vertical direction, is used to sense the

magnetic field in Z axis only. This potential application in portable device is restricted by the

huge volume. However, it is a challenge to integrate the 3-axis field sensors into one chip

because of the sensing mechanism in Z axis. In this study, the permalloy flux guide is proposed

to guide the magnetic field from Z axis to X axis. The permalloy layer, electroplated on the

silicon substrate, is much thicker than a magnetic sensor. The thick permalloy layer is ensure

that the magnetic field is uniformly guided. Therefore, it is beneficial for integrating the 3-axis

magnetic sensor into single chip. The hysteresis characteristics of the flux guide are

demonstrated by means of alternate gradient magnetometer. More details will be elaborated

further.

Figure 1. Landau levels:

(a) the levels in

conduction band, (b) the

first-group and (c) the

second-group levels in

valence band.

Figure 2. Field-dependent

absorption frequencies for

different compounds: (a) the

first-type and (b) the

second-type of optical

transitions.

Figure 3. (a) Zero-field Bloch bands and (b)

Hofstadter energy spectrum of MoS2. The

Landau fan diagrams near the bottom of the

conduction band and the top of the valence

band are respectively plotted in (c) and (d) for

a field up to 100 T.

Spin and Valley Polarizations in Transition Metal Dichalcogenide

Monolayers (D1)

Yen-Hung Ho (何彥宏),

1 and Wu-Pei Su (蘇武沛)

2

1Department Physics, National Tsing Hua University, Hsinchu, Taiwan

2Texas Center for Superconductivity and Department of Physics, University of Houston, Texas,

USA

Abstract

The spin and valley polarizations can be realized in transition metal dichalcogenide

monolayers by tuning an external magnetic field. The former arises from the intrinsic spin-orbit

coupling, while the latter results from the inversion symmetry breaking. In the calculated

Landau level spectra, each level can be well characterized with a set of orbital, spin, valley and

Landau indexes. In the calculation of magneto-optical spectra, the physical origins of optical

selection rules are clearly resolved. Compounds are different from one another in terms of

transition energies and appearance of twin peaks. Our numerical results propose a feasible way

to magnetically control the spin and valley charge carriers.

We also carried out the study of Hofstadter spectra for MoS2 monolayer. The cases of

various hoppings between d-orbital electrons are systematically illustrated. Both the spectral

symmetry and the Landau fan diagrams can be directly linked to specific Bloch-band

singularities. Our theoretical results can serve as a blueprint for future experiments.

References

1. Y.-H. Ho, Y.-H. Wang, and H.-Y. Chen, Phys. Rev. B 89, 155316 (2014).

2. Y.-H. Ho, C.-W. Chiu, W.-P. Su, and M.-F. Lin, Appl. Phys. Lett. 105, 222411 (2014).

3. Y.-H. Ho, W.-P. Su, and M.-F. Lin, RSC Adv. 5, 20858 (2015).

Pinning domain wall by using NiFe/IrMn exchange bias (D2)

彰化師範大學 林集揚

Chi-Yang Lin (林集揚) 1 , Feng-Fheng Wu(吳豐盛),Deng-Shiang Shiu(許登翔) , Kao-Fan Lai(賴高

範) , Lance Horng (洪連輝) 1

1 Department of physics, National Changhua University of Education,Taiwan

Abstract

The Exchange Bias (EB) coupling between an antiferromagnetic (AF) layer and a ferromagnetic (F)

layer is indispensable in Spin Valves (SV) for data storage and magnetic field sensor applications. In

this work, AF layers and F layers were grown on the silica substrate by sputtering, with the former

consisting of NiFe (6 nm)/IrMn (5 nm) and the latter of CoFeB (20 nm). We proposed a new method to

pin domain wall in straight wires by using exchange bias. A series of patterned AF wires which were

perpendicular to F wires were fabricated. When the sample annealing at 225oC for 1h in a magnetic field

of 1000 Oe, AF was induced exchange bias at the AF/F conjunction area. In such a system, we can

control the pinning strength by varying the widths of the AF wires.

Referance

[1] M. Pakala, Y. Huai, G. Anderson, and L. Miloslavsky / Journal of Applied Physics 87, 6653 (2000)

[2] Geoff Anderson, Yiming Huai, and Lena Miloslawsky / Journal of Applied Physics 87, 6989 (2000);

[3] I. Polenciuc, A. J. Vick, D. A. Allwood, T. J. Hayward, G. Vallejo-Fernandez, K. O'Grady, and A. Hirohata /

Applied Physics Letters 105, 162406 (2014);

Study of the Electro-Optical Behavior on BPIII (D3)

Sheng-Feng Lu,1 and Hui-Yu Chen2

1Dept. of Photonics, Feng Chia University, Taichung, Taiwan

2Department of Physics, National Chung Hsing University, Taichung,

Taiwan

Abstract

An intrinsic optical-isotropic phase in liquid crystal materials is the blue phases (BPs). When the

BP cell is inserted between two crossed polarizers, a perfect dark state will be detected and, in theory, the

BP cell exhibits an unlimited contrast ratio for display when the BP reflection wavelength is less than the

visible light. BPs are classifiable into three distinct phases: blue phase I (BPI), blue phase II (BPII), and blue

phase III (BPIII) [1]. BPIII is amorphous with a short distance order of double twist alone [2] and usually

shows a broad and weak selective reflection spectrum. Thus, BPIII exhibits very low transmission

compared to the other two BPs. Because the temperature range of BPIII is the narrowest, only few papers

discuss the electric-optic effect in BPIII [2]. By applying a vertical electric field, the reflection intensity of

BPIII can change, but the reflection wavelength does not [3]. Moreover, by an in-plane-switching field,

BPIII can switch from optically isotropic to anisotropic state. Although this optical isotropy/anisotropy

switching is already explained by Kerr effect [4], the research on BPIII still stops on the earlier stage. In

our previous experiment [5], by detecting the polarization state of the transmitting light through the BPIII

cell and calculating the field-induced birefringence, we found that the induced birefringence saturates in

the high voltage regime, but the transmitting intensity does not. It implies that Kerr effect can not explain

the electro-optical behavior of BPIII.

In this summary, a wide-temperature-range BPIII material (>15 C) without a polymer network is

used to discuss its electric-optic behavior. When the BPIII cell is applied the electric field, the

field-induced optic axis which paralleled the electric field was seen in Fig. 1. We also apply high voltage

(200 V) to BPIII cell in different frequency and measure its transmittance or response time in Fig. 2. In

a square wave with low frequency, the transmission changes with the time. As time goes, the transmission

of the BPIII cell becomes bright. It relates to the rise time of BPIII cell, but fall time does not. From the

preliminary experimental results, we suggests that the field-induced optic axis is rotated by the electric

filed in three dimensions. It induced a special electro-optical phenomenon, which may be explained both by

Kerr effect and flexoelectric effect.

References

1. H.-S. Kitzerow, Proc. of SPIE, 7232, 723205 (2009).

2. D. K. Yang and P.P Crooker, Phys. Rev. A 35,4419 (1987).

3. H.-Y. Chen, J.-L Lai, C.-C. Chan, and C.-H. Tseng, J. Appl. Phys. 113, 123103(2013).

4. Y. Hisakado, H. Kikuchi, T. Nagamura, and T. Kajiyama, Adv. Mater. 17, 96 (2005).

5. H.-Y. Chen, S.-F. Lu, and Y.-C. Hsieh, Opt. Express, 21, 9774 (2013).

* E-mail: amused8076@hotmail.com

Two Superconducting Qubits Coupled to Microwave

Resonator (D4)

Yuan-Hsiang Hsieh (謝元翔), Wei-Cheng Chien(簡維成), Yun-Lian Hsieh(謝昀璉), Cen-Shawn Wu(吳憲昌),

Watson Kuo(郭華丞) Abstract

We study two superconducting transmon qubits coupled to a superconducting coplanar

waveguide resonator. The resonator has a resonance frequency of 5.2 GHz and quality factor is

about 250. The coupling strength of transmon and cavity is 40MHz. Due to different SQUID

loop area, two qubits has distinct magnetic field period for tuning their energy levels. When the

qubit and cavity are in the off-resonance condition, the resonant frequency of cavity can be

slightly modified by qubit state, providing a route for qubit state measurement. We used

6.2GHz and above -90dB microwave to pumping qubit. Under these conditions, we can

observed qubit state be changed at 5.2GHz probe frequency.

Using image recognition technology to identify the similarity

simulation of surface atoms and experimental atomic structure

(D5)

Yong-Hong Chen1(陳永宏), Mon-Shu Ho

1(何孟書),

Wan-Sheng Su2(蘇萬生)

Abstract

We simulate the image that observed by scanning tunneling microscope

(STM) with VASP. First we calculate the physical properties of the surface using

VASP, like atomic structures, atomic arrangement and electron configuration etc..

The results depicted the STM images with computer animation software. And

then we compared with the figure which the experimental STM scans. We focus

on the different between the surface silicon material simulation and experimental

sample image picture by the image programs, such as chromatic aberration,

atomic bonding, bonding angle, bonding structure, atomic distribution etc..

Pb-Sb-S 量子點固態半導體敏化太陽能電池特性 (E1)

Y.C.Chang(張義正), M.W.Lee(李明威)

Institute of Nanoscience and Department of Physics, National Chung Hsing University

Abstract

Pb-Sb-S 是一個相當有趣的半導體材料，其 Energy Gap 為 1.53eV，適合拿來作為太

陽電池。本研究製程依序為噴霧熱解法合成 blocking-layer，接著 spin-coating多孔隙 TiO2

薄膜，再來利用連續離子沉積法(SILAR)，在 TiO2表面鍍上 Pb-Sb-S半導體做為敏化劑，

最後填充電洞傳輸材料(HTM)並濺鍍金電極。本實驗室先前在 Pb-Sb-S 液態太陽電池效率

達 2.5%，本研究製作固態敏化太陽電池，目標在提升電池轉換效率。

目前最佳樣品，在10% AM 1.5 太陽光下得到的電池轉換效率為4.14%、開路電壓為

0.41 V、短路電流為2.00 mA/cm2；目前仍低於液態電池效率，透過SEM分析，固態電解

質填充至TiO2光電極狀態不佳，預期改善之後可以提升電池效率。

CuBiS2 Quantum Dot-Sensitized Solar Cells by Chemical Bath

Deposition Method (E2)

Nipapon Suriyawong , Ming-Way Lee

Department of Physics and Institute of Nanoscience, National Chung Hsing University

Emplectite (CuBiS2: copper bismuth sulphide) is an interesting semiconductor with an

optical energy gap of 1.65 eV that is suitable for solar energy technologies. In this work CuBiS2 quantum dots (QDs) were synthesized on a TiO2 substrate by the chemical bath

deposition (CBD) method. Liquid junction solar cells were assembled from the CuBiS2 QDs.

The best solar cell yield a power conversion efficiency of 0.62%, a short-circuit current of 6.87

mA/cm2, an open-Circuit Voltage of 0.25 volt and 36.13% of fill factor. The effect of

deposition time, TiO2 particle size and counter electrode were studied. We found that the

optimal process of CuBiS2 QDs-sensitized solar cells is: deposition time 2.5 hours, AO-40 nm

TiO2 particle size and Cu2S as the counter electrode. We are improving the performance by

changing the counter electrode or TiO2 particle size.

Pb-Sn-S Semiconductor-Sensitized Solar Cells (E3)

Yen-Chen Zeng (曾彥鈞)1*, Ming-Way Lee(李明威)

2

1物理所, 國立中興大學, 台中, Taiwan

2奈米科學所, 國立中興大學, 台中, Taiwan

Abstract

We present a new ternary semiconductor sensitizer Pb-Sn-S for solar cells. Successive ionic

layer adsorption and reaction (SILAR) was employed to prepare Pb-Sn-S sensitized

nanocrystallite TiO2 photoanodes. After a two-stage SILAR and annealing at 190℃ for 10

min in N2, PbSnS quantum dots were synthesized.The effects of TiO2 diameters and annealing

temperature on the photovoltaic performance were also studied. The best cell exhibited a

short-circuit current density, open-circuit voltage, fill factor, and power conversion efficiency

could reach 10.79 mA/cm2, 0.28 V, 32.81 % and 0.992%, respectively.

ZnO-doped TiO2 Photo-anodes for Dye-Sensitized Solar Cells (E4)

氧化鋅摻入二氧化鈦在染料敏化太陽能電池的光電極之研究

K. M. Chinnu1, B.-C. Lei

1, Z.-K. Lin

1,

C. -E. Cheng1,2

, C. S. Chang2, F. S.-S. Chien

1,*

1Department of Applied Physics, Tunghai University, Taiwan

2Department of Photonics, National Chiao Tung University, Taiwan

*fsschien@thu.edu.tw

本研究是將氧化鋅(ZnO)摻入二氧化鈦(TiO2)光電極中，來改善染料敏化太陽能電池

(dye-sensitized solar cells，DSCs)光伏表現。實驗中分別 TiO2光電極中摻入 0.5 wt%、1 wt%、

1.5 wt%及 2 wt%的 ZnO 奈米顆粒。由光伏特性 J-V曲線測量結果發現，摻入 1 wt% ZnO

奈米顆粒之太陽能電池據有較佳的表現(Jsc：10.87 mA/cm2 ；Voc：0.67 V)；而太陽能電池

能量轉換效率為 5.0 %，相較於未摻雜之參考電池(4.5 %)，能量轉換效率改善了 9 %。阻

抗頻譜分析顯示，摻入 ZnO (1 wt%)後可抑制電子-電洞對再結合，有效抑制 DSC 光電極

中的電子與電解液 I3–離子產生逆反應，使得 DSC 效率因此而提升。推論是因為 ZnO 具

有較高的電子濃度，摻入 TiO2光電極後會將電子注入 TiO2的缺陷態，有效減少光電極中

缺陷態的數量，因而減少光電極漏電的路徑，最終達到改善 DSC 效率的目的。

Poster Presentation List PosterNo. Name Affiliation Abstract Title

1 Choon-Lin Ho TKU On zero energy states in

graphene

2 張橙洋 NCUE Synthesis and Optical

Characterization of CuInS2

Quantum Dots

3 施佑叡 NCUE

4 蕭博文 NKNU The Optical Properties and

Influence Mechanism of Au

Nanoparticles Processed by

the Combination of Diverse

Filtration and Ultrasonication

5 賀語喬 NCHU A study for NIH3T3 cell

metabolism with gold and

TiO2 nanoparticles

6 陳宥霖 NCHU ZnO nanowire based CO

sensor

On zero energy states in graphene (1)

Choon-Lin Ho

1 and Pinaki Roy

2

1Department of Physics, Tamkang University, Tamsui 25137, Taiwan

2Physics & Applied Mathematics Unit, Indian Statistical Institute, Kolkata - 700

108, India

The dynamics of charge carriers in graphene is governed by (2+1)-dimensional massless Dirac

equation except that the velocity of light is replaced by the Fermi velocity [1]. In order for graphene

to have practical applications it is necessary to confine or control the motion of the electrons. It is

well known that compared to magnetic fields it is much more difficult to confine the electrons using

electric fields. However it has recently been shown that using certain types of electric fields it is

indeed possible to confine electrons in graphene and obtain the zero energy states.

Also a certain type of electric field has been found to admit not only zero energy solutions but

quasi exact solutions as well [2]. In view of the fact that zero energy states in graphene are of

particular interest, here we shall employ an alternative method to analyze the model of Ref. [2] and

obtain zero energy states of the secant hyperbolic potential as well as its trigonometric counterpart [3].

We shall also discuss zero energy solution of a periodic potential. We would like to point out that the

method used here will also illustrate how non relativistic PT-symmetry [4] appears naturally in

relativistic quantum mechanics.

Refernces

1. Novoselov K.S.,Geim A.K., Morozov S.V. , Jiang D. , Zhang Y., Dobonos S.V. \and Grigorieva I.V.

Science 306, 666 (2004).

2. Hartmann R.R. and Portnoi M.E., Phys. Rev. A 89, 012101 (2014)

3. Ho C.-L, and Roy P., EPL 108, 20004 (2014).

4. Bender C.M. and Boettcher S., Phys. Rev. Lett. 80, 5243 (1998).

Synthesis and Optical Characterization of CuInS2 Quantum Dots (2)

Cheng-Yang Zhang(張橙洋)1 , Ying-Zhe Hong(洪英哲)

2 , Jing-Chen Huang(黃靖宸)

2 ,

Yu-Jui Shih(施佑叡)1, Guan-Lin Li (李冠嶙)

2, Yu-Tai Shih(石豫臺)

2

1 Institute of Photonics, National Changhua University of Education, Changhua500, Taiwan

2Department of Physics, National Changhua University of Education, Changhua500, Taiwan

Abstract

CuInS2 quantum dots (QDs) were synthesized by a noninjection approach. Size of the QDs was

controlled by varying the reaction time. Absorption and photoluminescence (PL) measurements were

taken to investigate the optical properties of the QDs. The results showed that the bandgap of the CuInS2

cores increased when their size decreased and the PL intensity of the QDs improved due to surface

passivation by the ZnS shells. Temperature dependent PL spectra suggested that the thermal activation

energy of the CuInS2 QDs increased when their size decreased. It was proved that defect states and

donor-acceptor pairs dominated the PL of the CuInS2 QDs.

The Optical Properties and Influence Mechanism of Au Nanoparticles

Processed by the Combination of Diverse Filtration and Ultrasonication (4) Jia-Ren Lee , Bo-Wen Shiau and Wei-Cheng Ding

Department of Physics, National Kaohsiung Normal University, Kaohsiung , Taiwan

Abstract

This paper studies the optical properties and particle size influence mechanism of prepared Au

nanoparticles by the filtration technique of combining ultrasonication and filter. The unfiltered Au

nanoparticle solutions are produced by the sonoelectrochemical method: the ultrasonication and

constant current electrolysis is simultaneously implemented. The pore size of selected quantitative filter

papers in the filtering process is 1 μm or 7 μm. Two kinds of filtration method for Au nanoparticle

solution added with filter paper are used: one is magnetic stir and the other is ultrasonic concussion. After the same filtration time, the lower absorbance and the more blue-shifted peak of filtered solution

processed by ultrasonic vibration are observed than that by stir. The results demonstrate that the

ultrasonication is a more effective way to filter out larger Au nanoparticles and extract smaller ones. If the filtration time is extended, the more reduced intensity and blue-shifted peak are observed. The

micron particles are the first to be eliminated by the filter pores during the ultrasonication filtration

process. The obstructed micron particles of pores will reform narrower orifices to filter the near

micron-sized nanoparticles. When the new filter pores evolve into nanometer size in the continued

process, the smaller nanoparticles are percolated and the absorption peak is blue-shifted. The absorption

peaks of filtered solution are dissimilarly blue-shifted by diverse initial pore size in the same filtration

time. The absorption peak of solution filtered by the 7 μm filter has more blue-shift than that by 1 μm

one. The larger filter pores can effectively filtrate larger particles and accelerate reproducing of

nanoscale pores, hence the smaller nanoparticles are percolated and the more blue-shifted absorption

peaks are measured.

Table 1: The absorption peak wavelengths of Au nanoparticle solution after different filtration treatment.

Sample Peak(nm) Absorbance

unfiltered solution 536.35 1.62965

stir filtration 1 hr 535.04 1.48854

ultrasonication filtration 10 min 533.24 0.97349

ultrasonication filtration 20 min 526.91 0.25400

300 400 500 600 700 800 900 1000 1100 1200

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

Ab

sorb

an

ce(O

D)

Wavelength (nm)

unfiltered solution

stir filtration 1 hr

ultrasonication filtration 10 min

ultrasonication filtration 20 min

Figure 1. The absorption spectra of the filtration treatment by stir and

ultrasonication

A study for NIH3T3 cell metabolism with gold and TiO2

nanoparticles(5)

Yu-Chiao He, Pei-Ting Tou, Mon-Shu Ho

Institute of Nanoscience and Department of Physics, National Chung Hsing University,

Taichung 402, Taiwan

Abstract

In our study, several different kinds of nanoparticles (NPs) are introduced to exam cell

metabolism. The gold and TiO2 NPs are taken as material candidates and to understand the

mechanizing of NIH3T3 cells.

Firstly, we observed the characteristics；morphology of cells and adhesion on cell

membranes by using Optical Microscope (OM)、Atomic Force Microscope (AFM) and

Fluorescence Microscope. Secondly, we fabricate a platform with microelectrode arrays and

analyze the impedance of cells after the NPs were added in. In the future, we hope to

understand the mechanism of cell metabolism and provide a platform for rapid detection of the

cell metabolism with NPs.

References

1. K. Tomankova, H. Kolarova, P. Kolar, K. Kejlova, D. Jirova, Study of cytotoxic effect of

photodynamically and sonodynamically activated sensitizers in vitro, Toxicology in Vitro

23(2009) 1465-1471

2. Qingjun Liu, Weiwei Ye, Lidan Xiao, Liping Du, Ning Hu, Ping Wang, Extracellular

potentials recording in intact olfactory epithelium by microelectrode array for a

bioelectronics nose, Biosensors and Bioelectronics 25(2010) 2212-2217

ZnO nanowire based CO sensor

Yu-Lin Chen(陳宥霖)

1, Mon-Shu Ho(何孟書)

2*

1Insitute of Nanoscience, Taichung City,Taiwan

2Department of Physics, Taichung City,Taiwan

Abstract

The performance of the fabricated sensors with ZnO nanowire arrays are determined in

our study, including the electrical properties, sensitivity. ZnO nanowires are synthesized by

hydrothermal method on ZnO seed layers made by thermal decompose. The structure,

morphology, optical properties of nanowires were then investigated by scanning electron

microscopy, transmission electron microscopy, X-ray diffraction, and energy-dispersive X-ray

spectroscopy. We used photolithography to make arrayed electrode, and align and position

nanowires onto the electrodes by dielectrophoresis to make gas sensors. Our results shows that

the fastest responds and recovery time of the fabricated sensors are 19.52 and 32.66 seconds,

respectively, and the highest sensitivity is about 0.07 at room temperature.

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