Prospects for Energy Resolving X-Ray Imaging with Compound Semiconductor Pixel Detectors
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Transcript of Prospects for Energy Resolving X-Ray Imaging with Compound Semiconductor Pixel Detectors
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G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
6th International Workshop on Radiation Imaging Detectors IWORID-2004,
July 25-29 , Glasgow (Scotland).
Prospects for Energy Resolving X-Ray Imaging with Compound Semiconductor
Pixel Detectors
Politecnico di MilanoDepartment of Electronics Engineering and Information Science and INFN
Milano - Italy
Giuseppe Bertuccio
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G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
Outline
• GaAs and SiC X-Ray detectors
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G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
Outline
• GaAs and SiC X-Ray detectors
• The achieved results
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G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
Outline• GaAs and SiC X-Ray detectors
• The achieved results
• Some related issues :
– Leakage current
– Electronic noise
– Charge transport
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G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
Outline• GaAs and SiC X-Ray detectors
• The achieved results
• Some related issues :
– Leakage current
– Electronic noise
– Charge transport
![Page 6: Prospects for Energy Resolving X-Ray Imaging with Compound Semiconductor Pixel Detectors](https://reader036.fdocuments.us/reader036/viewer/2022081603/56814547550346895db2150a/html5/thumbnails/6.jpg)
G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
Outline• GaAs and SiC X-Ray detectors
• The achieved results
• Some related issues :
– Leakage current
– Electronic noise
– Charge transport
• Prospects with GaAs and SiC pixel detectors
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G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
GaAs Radiation Detectors:
30 years of a fascinating history
• 1971-72 : Eberharth et al. (NIM-94), Kobayashi et al. (NIM-98)
1992 -1998:
• Europe: Aachen, CERN, Freiburg, Glasgow, Imperial
College, Lecce, Leicester, Milano, Modena, Pisa, Sheffield…
• USA : Michigan Univ., Sandia; UCLA, Livermore, Naval,
Berkeley, Wright Univ.
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G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
1996 – GaAs single pixel GaAs
Equivalent Noise Energies
@ 20 °C: 532 eV FWHM (53 e- r.m.s.)
@ -30°C: 373 eV FWHM (37 e- r.m.s.)
Equivalent Noise Energies
@ 20 °C: 532 eV FWHM (53 e- r.m.s.)
@ -30°C: 373 eV FWHM (37 e- r.m.s.)
MBE GaAs - 5 m thickp-i-n structure (3·1014 cm-3)
pixel: 170 x 320 m
MBE GaAs - 5 m thickp-i-n structure (3·1014 cm-3)
pixel: 170 x 320 m
IEEE Trans. Nucl. Sci. 44, 1997
Politecnico di Milano – KFA Julich Collaboration
Politecnico di Milano – KFA Julich Collaboration
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G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
2002 - Pixel Array
CVD GaAs - 40 m thickp+n structure
Pixel size: 200 m x 200 m
CVD GaAs - 40 m thickp+n structure
Pixel size: 200 m x 200 m
A. Owen, M. Bavdaz, A. Peacock (ESA)
S. Nenomen, H. Anderson (Metorex)
G. Bertuccio, R. Casiraghi, D. Maiocchi (PoliMI)
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G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
Epitaxial Layer Characteristics
1.5·1014 cm-3
Equivalent to
20 X Silicon thickness (650 m )
33 m @ 100 V
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G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
pA
Junction Leakage Current
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G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
pA
Junction Leakage Current
3-12 nA/cm2
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G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
200
Ileak Equivalent Noise @ 5 s
30Soft
Cooling
Soft Cooling
Room Temperature
Room Temperature
Can this current (noise) be lowered ?Can this current (noise) be lowered ?
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G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
Leakage Current densities
Is the ultimate limit reached for JGaAs ?Is the ultimate limit reached for JGaAs ?
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G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
Investigation on
the leakage curent origin
in junctions on GaAs
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G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
Leakage current origin in GaAs detectors
Schottky junction GaAs detectors
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G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
Leakage current origin in GaAs detectors
Schottky junction GaAs detectors
kT
qV
kT
q
R
R
eeTASI 1
emissionThermionic
B2*
B= 0.91 eVB= 0.91 eV
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G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
Leakage current origin in GaAs detectors
Schottky junction GaAs detectors
kT
qV
kT
q
R
R
eeTASI 1
emissionThermionic
B2*
s
mqE
4
loweringBarrier
B0B s
mqE
4
loweringBarrier
B0B
B= 0.91 eVB= 0.91 eV
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G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
Leakage current origin in GaAs detectors
Schottky junction GaAs detectors
kT
qV
kT
q
R
R
eeTASI 1
emissionThermionic
B2*
s
mqE
4
loweringBarrier
B0B s
mqE
4
loweringBarrier
B0B
ms
m EqE
4
static loweringBarrier
B0B ms
m EqE
4
static loweringBarrier
B0B
B= 0.91 eVB= 0.91 eV
x 5
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G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
Leakage current origin in GaAs detectors
p+n junction GaAs detectors
291 K
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G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
Leakage current origin in GaAs detectors
p+n junction GaAs detectors
Thermal Generation
EA = 0.7 eV
G = 1 s
Thermal Generation
EA = 0.7 eV
G = 1 s
291 K
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G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
Leakage current origin in GaAs detectors
p+n junction GaAs detectors
Thermal Generation
EA = 0.7 eV
G = 1s
Thermal Generation
EA = 0.7 eV
G = 1s
Thermal gen. +
Poole Frenkel effect
Thermal gen. +
Poole Frenkel effectx 3
291 K
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G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
Leakage current in GaAs: conclusions
• Current densities ≤ 10 nA/cm2 @ 290 K
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G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
Leakage current in GaAs: conclusions• Current densities ≤ 10 nA/cm2 @ 290 K
• Schottky junction:
– Barrier height = 0.9 eV
– Significant barrier lowering effects
– Higher barrier, lower doping (smaller Em) required
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G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
Leakage current in GaAs: conclusions• Current densities ≤ 10 nA/cm2 @ 290 K
• Schottky junction:
– Barrier height = 0.9 eV
– Significant barrier lowering effects
– Higher barrier, lower doping (smaller Em) required
• p+n junction:
– Generation current ( G=1s ; EA= 0.7 eV )
– Poole-Frenkel effect observed
– Higher purity, lower doping (smaller Em) required
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G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
Prototype GaAs pixel array
Test with discrete front-end electronics16 electrons r.m.s. at +20°C
14 electrons r.m.s. at -30°C
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G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
Trans. Nucl. Sci. 50, 2003
Room temperature ( 20°C )
242 eV FWHM (24 e - r.m.s.)
Thermoelectric cooling ( -30°C )
163 eV FWHM (16 e - r.m.s.)
GaAs pixel – best resultsWhich are the limits ?
Can we hope higher resolution ?
Which are the limits ?
Can we hope higher resolution ?
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G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
Noise Components Analysis20 °C20 °C
GaAs detector connected
Front-end electronics
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G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
Noise Components Analysis20 °C20 °C
GaAs detector connected
Front-end electronics
Series noise
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G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
Noise Components Analysis20 °C20 °C
GaAs detector connected
Front-end electronics
Series noiseCur
rent
noi
se
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G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
Noise Components Analysis20 °C20 °C
GaAs detector connected
Front-end electronics
Series noise
Dielectric noise Curre
nt n
oise
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G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
X- Ray Spectroscopy
with epi-GaAs pixels detectors
Results
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G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
X- Ray Spectroscopy with GaAs
T = -30°C
ENE = 204 eV FWHM
( 20 e- r.m.s.)
T = -30°C
ENE = 204 eV FWHM
( 20 e- r.m.s.)
465 eV FWHM @ 59.5 keV
(Fano limit: 410 eV FWHM)
465 eV FWHM @ 59.5 keV
(Fano limit: 410 eV FWHM)
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G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
Pulser
283 ± 1 eV FWHM
241Am 59.54 keV
501 ± 5 eV FWHM
• No significant charge trapping
• Fano factor : F = 0.124 ± 0.004
• No significant charge trapping
• Fano factor : F = 0.124 ± 0.004
59.5 keV line analysis20 °C20 °C
Is the Charge Collection Efficiency 100 % ?Is the Charge Collection Efficiency 100 % ?
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G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
Charge trapping in GaAs detectors
gen
ind
Q
QCCE
gen
ind
Q
QCCE
ph
gen
EQ
phgen
EQ
Accurate knowledge of the electron-hole pair generation energy
required
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G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
Generation Energy in GaAs
300 K : = 4.18 ± 0.02 eV300 K : = 4.18 ± 0.02 eV
= 4.55 – 0.00122 T [eV] = 4.55 – 0.00122 T [eV]
Bertuccio, Maiocchi, JAP 92, 2002
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G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
Charge Collection Efficiency
CCEW
e
W
e h e h( )1CCEW
e
W
e h e h( )1
e+ h= 1400 m @ 110 V e+ h= 1400 m @ 110 V
CCE ≥ 99 %
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G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
Conclusions on tested GaAs pixel• High resolution with epi-GaAs pixels
– 242 eV FWHM @ 20°C
– 163 eV FWHM @ -30°C
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G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
Conclusions on tested GaAs pixel• High resolution with epi-GaAs pixels
– 242 eV FWHM @ 20°C
– 163 eV FWHM @ -30°C
• Main noise component: dielectrics (with discrete electronics)
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G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
Conclusions on tested GaAs pixel• High resolution with epi-GaAs pixels
– 242 eV FWHM @ 20°C
– 163 eV FWHM @ -30°C
• Main noise component: dielectrics (with discrete electronics)
• Leakage current density: ≤ 10 nA/cm2 @ 20°C
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G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
Conclusions on tested GaAs pixel• High resolution with epi-GaAs pixels
– 242 eV FWHM @ 20°C
– 163 eV FWHM @ -30°C
• Main noise component: dielectrics (with discrete electronics)
• Leakage current density: ≤ 10 nA/cm2 @ 20°C
• Mean drift length: up to 1.4 mm (CCE>99 % for 30 m)
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G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
Conclusions on tested GaAs pixel• High resolution with epi-GaAs pixels
– 242 eV FWHM @ 20°C
– 163 eV FWHM @ -30°C
• Main noise component: dielectrics (with discrete electronics)
• Leakage current density: ≤ 10 nA/cm2 @ 20°C
• Mean drift length: up to 1.4 mm (CCE>99 % for 30 m)
• Limits: depletion layer depth (detection efficiency)
– residual doping 1014 cm-3
– Epi layer thickness: 40 m
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G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
GaAs pixel detectors
• Good Schottky and p+n junction detectors exists !
• Epitaxial thickness >300 m has been grown (Poster: Glasgow-Paris)
Status
![Page 44: Prospects for Energy Resolving X-Ray Imaging with Compound Semiconductor Pixel Detectors](https://reader036.fdocuments.us/reader036/viewer/2022081603/56814547550346895db2150a/html5/thumbnails/44.jpg)
G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
GaAs pixel detectors
• Good Schottky and p+n junction detectors exists !
• Epitaxial thickness >300 m has been grown (Poster: Glasgow-Paris)
Status
Prospects
• Energy resolution of 180 eV FWHM are reachable at 20°C
• Residual doping ≤1013 cm-3 required
• Integrated spectroscopic-grade front-end electronic required
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G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
GaAs pixel detectors
• Good Schottky and p+n junction detectors exists !
• Epitaxial thickness >300 m has been grown (Poster : Glasgow-Paris)
Status
Prospects
• Energy resolution of 180 eV FWHM are reachable at 20°C
• Residual doping ≤1013 cm-3 required
• Integrated spectroscopic-grade front-end electronic required
![Page 46: Prospects for Energy Resolving X-Ray Imaging with Compound Semiconductor Pixel Detectors](https://reader036.fdocuments.us/reader036/viewer/2022081603/56814547550346895db2150a/html5/thumbnails/46.jpg)
G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
Large Format Detector Readout ASICD. Martin, A. Owens
EUROPEAN SPACE AGENCY, ESA-ESTEC - Noordwjik (NL)
P. Bastia, I. Cappelluti, F. Ferrari, N. Ratti
ALENIA SPAZIO s.p.a. - LABEN - MILANO ( I )
P. Malcovati, F. Borghetti, V. Ferragina
PAVIA UNIVERSITY ( I )
G. Bertuccio, S. Caccia, D. Maiocchi, A. Pullia
POLITECNICO DI MILANO ( I )
A Finmeccanica Company
Readout system &
coordination
Back-end design
Front-end design
Supervision
![Page 47: Prospects for Energy Resolving X-Ray Imaging with Compound Semiconductor Pixel Detectors](https://reader036.fdocuments.us/reader036/viewer/2022081603/56814547550346895db2150a/html5/thumbnails/47.jpg)
G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
GaAs 32 x 32 array
1.2 cm
250 m
1.2 cm Design goal E=180 eV @ 5.9 keV
LFDR ASIC for GaAs Pixels
![Page 48: Prospects for Energy Resolving X-Ray Imaging with Compound Semiconductor Pixel Detectors](https://reader036.fdocuments.us/reader036/viewer/2022081603/56814547550346895db2150a/html5/thumbnails/48.jpg)
G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
• 0.35 m CMOS (AMS)
• 16 x 16, 32x32, 64x64 pixel channels
• 300 x 300 m2 channel size
• Complete: Preamplifier ADC
• Spectroscopic grade - 500 W/channel (simulated)
• 30 electrons r.m.s. @ 20°C (simulated)
LFDR ASIC (designed – in production)
A Finmeccanica Company
![Page 49: Prospects for Energy Resolving X-Ray Imaging with Compound Semiconductor Pixel Detectors](https://reader036.fdocuments.us/reader036/viewer/2022081603/56814547550346895db2150a/html5/thumbnails/49.jpg)
G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
LFDR : ASIC Block diagram
analog cells16x16 - 64x64
cell’s registers
ADC’s
I/O- Interfaces
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G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
Silicon Carbide
X-Ray Detectors
![Page 51: Prospects for Energy Resolving X-Ray Imaging with Compound Semiconductor Pixel Detectors](https://reader036.fdocuments.us/reader036/viewer/2022081603/56814547550346895db2150a/html5/thumbnails/51.jpg)
G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
Silicon Carbide
X-Ray Detectors
• Introduction on SiC
![Page 52: Prospects for Energy Resolving X-Ray Imaging with Compound Semiconductor Pixel Detectors](https://reader036.fdocuments.us/reader036/viewer/2022081603/56814547550346895db2150a/html5/thumbnails/52.jpg)
G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
Silicon Carbide
X-Ray Detectors
• Introduction on SiC
• Prototype detectors
![Page 53: Prospects for Energy Resolving X-Ray Imaging with Compound Semiconductor Pixel Detectors](https://reader036.fdocuments.us/reader036/viewer/2022081603/56814547550346895db2150a/html5/thumbnails/53.jpg)
G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
Silicon Carbide
X-Ray Detectors
• Introduction on SiC
• Prototype detectors
• X-ray spectroscopy at room temperature…and above
![Page 54: Prospects for Energy Resolving X-Ray Imaging with Compound Semiconductor Pixel Detectors](https://reader036.fdocuments.us/reader036/viewer/2022081603/56814547550346895db2150a/html5/thumbnails/54.jpg)
G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
Silicon Carbide
X-Ray Detectors
• Introduction on SiC
• Prototype detectors
• X-ray spectroscopy at room temperature…and above
• SiC Pixel detectors: a sub-electron electronic noise device
![Page 55: Prospects for Energy Resolving X-Ray Imaging with Compound Semiconductor Pixel Detectors](https://reader036.fdocuments.us/reader036/viewer/2022081603/56814547550346895db2150a/html5/thumbnails/55.jpg)
G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
SiC politypes
3C-SiC(EG = 2.2 eV)
4H-SiC(EG = 3.3 eV)
6H-SiC(EG = 3 eV)
![Page 56: Prospects for Energy Resolving X-Ray Imaging with Compound Semiconductor Pixel Detectors](https://reader036.fdocuments.us/reader036/viewer/2022081603/56814547550346895db2150a/html5/thumbnails/56.jpg)
G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
SiC propertiesWide Bandgap
EG=3.2 eV
Low thermally generated currents
Room temperature operation
High saturation velocity
vS = 200 m/ns
High frequency/speed
devices
Short transit time
Low trapping probability
High Voltage devices
High Critical Field
EC = 2 MV/cm
High Power devices
High thermal conductivity
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G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
SiC High PerformanceElectron Devices…
...a reality
![Page 58: Prospects for Energy Resolving X-Ray Imaging with Compound Semiconductor Pixel Detectors](https://reader036.fdocuments.us/reader036/viewer/2022081603/56814547550346895db2150a/html5/thumbnails/58.jpg)
G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
The highest VB diode
Reverse Voltage [kV]
Cur
rent
[ n
A ]
VB = 19 kV
Power MOSFET: 5 kV - 88 m cm2
fT=14.5 GHz, fMAX=38 GHz
IDmax= 400 mA, VDSmax=150V
Gain: 16 dB @ 2 GHz
fT=14.5 GHz, fMAX=38 GHz
IDmax= 400 mA, VDSmax=150V
Gain: 16 dB @ 2 GHz
High Power X-Band MESFET
SiC High Performance Electron Devices
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G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
Would SiC be advantageus
for X-Ray Spectroscopy and Imaging ?
![Page 60: Prospects for Energy Resolving X-Ray Imaging with Compound Semiconductor Pixel Detectors](https://reader036.fdocuments.us/reader036/viewer/2022081603/56814547550346895db2150a/html5/thumbnails/60.jpg)
G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
SiC Si
Soft X-ray Absorption length
SiCSi
Can SiC compete with Si ? (!)Can SiC compete with Si ? (!)
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G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
Electron-hole pairs : Signal !
Q = Eph / Q = Eph /
What about the SiC detector noise ?
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G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
Detector noise sources
• Leakage current
• Carriers trapping phenomena
• Dielectric noise
• [Charge collection process (balistic deficit signal
reduction)]
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G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
Run of SiC X-Ray Detectors(Technology: Alenia Marconi Systems - Rome)(SiC wafers: CREE Inc., USA)
Schottky contact - Au
n - epilayer 5x1014 - 70 m
n+ buffer 1 m
n+ substrate - 320 m
ohmic contact - Ti/Pt/Au
Array of pixelsArray of pixels
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G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
Schottky Barrier Height : b=1.16 eV
I-V Characteristics
Forward bias Reverse bias
!!
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G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
Leakage Current DensityState of the art detectors
Si1 nA/cm2
SiC5 pA/cm2
200
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G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
Temperature effect: SiC vs. Si
25
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G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
Tested devices
• Pixel detector: area=0.03 mm2 ; capacitance: 0.17 pF
• Pad detector : area= 0.3 mm2 ; capacitance : 1.7 pF
Experimental Results on SiC Detectors
![Page 68: Prospects for Energy Resolving X-Ray Imaging with Compound Semiconductor Pixel Detectors](https://reader036.fdocuments.us/reader036/viewer/2022081603/56814547550346895db2150a/html5/thumbnails/68.jpg)
G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
SiC detectors at 27 °C ( 300 K )
Energy resolution
415 eV FWHM ( 22 e- r.m.s. )
Energy resolution
415 eV FWHM ( 22 e- r.m.s. )
Energy resolution
315 eV FWHM ( 17 e- r.m.s. )
Energy resolution
315 eV FWHM ( 17 e- r.m.s. )
Pixel : A=0.03 mm2Pixel : A=0.03 mm2Pad : A=0.3 mm2Pad : A=0.3 mm2
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G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
SiC pixel at 27 °C ( 300 K )
Energy resolution: 315 eV FWHM ( 17 e- r.m.s. )Energy resolution: 315 eV FWHM ( 17 e- r.m.s. )
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G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
Beyond Room Temperature...
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G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
Operation beyond room temperature ?
E= 100 kV/cm , T = 27 °C → JR = 14
pA/cm2
T = 100 °C → JR = 0.5
nA/cm2
E= 100 kV/cm , T = 27 °C → JR = 14
pA/cm2
T = 100 °C → JR = 0.5
nA/cm2
![Page 72: Prospects for Energy Resolving X-Ray Imaging with Compound Semiconductor Pixel Detectors](https://reader036.fdocuments.us/reader036/viewer/2022081603/56814547550346895db2150a/html5/thumbnails/72.jpg)
G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
R
Termoresistance
SiC Detector
JFETD S
Vout
Temperature
Controller
Vtest
Thermo-controller
Preamplifier
High temperature set-up
Front-end
![Page 73: Prospects for Energy Resolving X-Ray Imaging with Compound Semiconductor Pixel Detectors](https://reader036.fdocuments.us/reader036/viewer/2022081603/56814547550346895db2150a/html5/thumbnails/73.jpg)
G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
46 °C ( 319 K - 115 F )
Energy resolution : 330 eV FWHM ( 18 e- r.m.s. )Energy resolution : 330 eV FWHM ( 18 e- r.m.s. )
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G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
63 °C ( 336 K - 145 F )
Energy resolution : 386 eV FWHM ( 21 e- r.m.s. )Energy resolution : 386 eV FWHM ( 21 e- r.m.s. )
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G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
81 °C ( 354 K - 178 F )
Energy resolution : 522 eV FWHM ( 28 e- r.m.s. )Energy resolution : 522 eV FWHM ( 28 e- r.m.s. )
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G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
100 °C ( 473 K - 212 F )
Energy resolution : 797 eV FWHM ( 43 e- r.m.s. )Energy resolution : 797 eV FWHM ( 43 e- r.m.s. )
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G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
SiC pixel detector: from 27 °C to 100°C
At high T the resolution is limited by the Front-end, NOT by the detector
At high T the resolution is limited by the Front-end, NOT by the detector
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G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
Prototype of SiC Pixel Matrix
• 4 x 4 matrix
• Pixel size: 400 m x 400 m
• 6 x 6 matrix
• Pixel size: 250 m x 250 m
![Page 79: Prospects for Energy Resolving X-Ray Imaging with Compound Semiconductor Pixel Detectors](https://reader036.fdocuments.us/reader036/viewer/2022081603/56814547550346895db2150a/html5/thumbnails/79.jpg)
G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
Pixel Forward Bias Characteristic
Saturation current
Is = 3.5·10-18A
Saturation current
Is = 3.5·10-18A
Ideality factor
n = 1.06
Ideality factor
n = 1.06
![Page 80: Prospects for Energy Resolving X-Ray Imaging with Compound Semiconductor Pixel Detectors](https://reader036.fdocuments.us/reader036/viewer/2022081603/56814547550346895db2150a/html5/thumbnails/80.jpg)
G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
Measurement of the Pixel Leakage Current
The problem…
SiC Pad detectors : JSiC = 5 – 15 pA/cm2
IREV = 8 fA - 160 fA !!!IREV = 8 fA - 160 fA !!!
Current density of a pixel ?
J = 5 - 100 pA/cm2 , Area = 400 x 400 m2
![Page 81: Prospects for Energy Resolving X-Ray Imaging with Compound Semiconductor Pixel Detectors](https://reader036.fdocuments.us/reader036/viewer/2022081603/56814547550346895db2150a/html5/thumbnails/81.jpg)
G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
Instrumention and device noise
± 0.4 fA
Electrometer noise
2 hours
Test-fixture /device
VBIAS=200V; I = 3.16 ± 0.3 fA
VBIAS=0V; I = 0 ± 0.1 fA
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G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
Pixel Reverse Bias Characteristic Room Temperature
![Page 83: Prospects for Energy Resolving X-Ray Imaging with Compound Semiconductor Pixel Detectors](https://reader036.fdocuments.us/reader036/viewer/2022081603/56814547550346895db2150a/html5/thumbnails/83.jpg)
G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
SiC PixelReverse Bias Characteristic
pA/cm2 @ 27 °CpA/cm2 @ 27 °C
nA/cm2 @ 100 °CnA/cm2 @ 100 °C
![Page 84: Prospects for Energy Resolving X-Ray Imaging with Compound Semiconductor Pixel Detectors](https://reader036.fdocuments.us/reader036/viewer/2022081603/56814547550346895db2150a/html5/thumbnails/84.jpg)
G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
Reverse Current Map
Leakage Current @ 27 °C
I = 274 fA : 1 pixel
I = 98 fA : 1 pixel
I = 36 fA : 1 pixel
I < 10 fA : 12 pixel
Leakage Current @ 27 °C
I = 274 fA : 1 pixel
I = 98 fA : 1 pixel
I = 36 fA : 1 pixel
I < 10 fA : 12 pixel
Leakage Current E.N.C. @ 27 °C @ 10s
I = 274 fA : 1 pixel = 5.8 e-
I = 98 fA : 1 pixel = 3.5 e-
I = 36 fA : 1 pixel = 2 e-
I < 10 fA : 12 pixel < 1 e- r.m.s.
Leakage Current E.N.C. @ 27 °C @ 10s
I = 274 fA : 1 pixel = 5.8 e-
I = 98 fA : 1 pixel = 3.5 e-
I = 36 fA : 1 pixel = 2 e-
I < 10 fA : 12 pixel < 1 e- r.m.s.
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G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
Summary
• SiC has the same absorption length as Si
![Page 86: Prospects for Energy Resolving X-Ray Imaging with Compound Semiconductor Pixel Detectors](https://reader036.fdocuments.us/reader036/viewer/2022081603/56814547550346895db2150a/html5/thumbnails/86.jpg)
G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
Summary
• SiC has the same absorption length as Si
• SiC can give superior resolution at certain T and Areas
![Page 87: Prospects for Energy Resolving X-Ray Imaging with Compound Semiconductor Pixel Detectors](https://reader036.fdocuments.us/reader036/viewer/2022081603/56814547550346895db2150a/html5/thumbnails/87.jpg)
G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
Summary
• SiC has the same absorption length as Si
• SiC can give superior resolution at certain T and Areas
• Pixel and pad detectors have been fabricated and tested
![Page 88: Prospects for Energy Resolving X-Ray Imaging with Compound Semiconductor Pixel Detectors](https://reader036.fdocuments.us/reader036/viewer/2022081603/56814547550346895db2150a/html5/thumbnails/88.jpg)
G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
Summary
• SiC has the same absorption length as Si
• SiC can give superior resolution at certain T and Areas
• Pixel and pad detectors have been fabricated and tested
• Leakage currents: 5 - 14 pA/cm2 @ 27 ° C
500 pA/cm2 @ 100°C
![Page 89: Prospects for Energy Resolving X-Ray Imaging with Compound Semiconductor Pixel Detectors](https://reader036.fdocuments.us/reader036/viewer/2022081603/56814547550346895db2150a/html5/thumbnails/89.jpg)
G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
Summary
• SiC has the same absorption length as Si
• SiC can give superior resolution at certain T and Areas
• Pixel and pad detectors have been fabricated
• Leakage currents: 5 - 14 pA/cm2 @ 27 ° C
500 pA/cm2 @ 100°C
• SiC pixel detector: 315 eV FWHM @ 27 ° C
797 eV FWHM @ 100 °C
![Page 90: Prospects for Energy Resolving X-Ray Imaging with Compound Semiconductor Pixel Detectors](https://reader036.fdocuments.us/reader036/viewer/2022081603/56814547550346895db2150a/html5/thumbnails/90.jpg)
G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
Summary
• SiC has the same absorption length as Si
• SiC can give superior resolution at certain T and Areas
• Pixel and pad detectors have been fabricated
• Leakage currents: 5 - 14 pA/cm2 @ 27 ° C
500 pA/cm2 @ 100°C
• SiC pixel detector: 315 eV FWHM @ 27 ° C
797 eV FWHM @ 100 °C
• SiC pixel : toward sub-electron (Fano limited) noise
![Page 91: Prospects for Energy Resolving X-Ray Imaging with Compound Semiconductor Pixel Detectors](https://reader036.fdocuments.us/reader036/viewer/2022081603/56814547550346895db2150a/html5/thumbnails/91.jpg)
G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
• Thicker epi-SiC layers : t >100 m (now: 50-70 m)
• Ultra-low doping and pure SiC: N 1013cm -3 (now: > 5 1013)
• High purity semi-insulating SiC (?)
• Ultra low noise front-end at room and high temperature
Prospects for SiC detectors:Limits and needed...
![Page 92: Prospects for Energy Resolving X-Ray Imaging with Compound Semiconductor Pixel Detectors](https://reader036.fdocuments.us/reader036/viewer/2022081603/56814547550346895db2150a/html5/thumbnails/92.jpg)
G. Bertuccio “Prospects for Energy Resolving X-ray Imaging with Compound Semiconductor Pixel Detectors ” 6th International Workshop on Radiation Imaging Detectors - IWORID-2004, July 25-29 , Glasgow (Scotland).
Acknowledgements
Prof. Emilio Gatti - Politecnico di Milano
Prof. Claudio Canali - University of Modena
Prof. Filippo Nava – University of Modena
Dr. Antonio Cetronio - Alenia Marconi Systems
Dr. Claudio Lanzieri - Alenia Marconi Systems
Dr. Roberto Casiraghi – ST Microelectronics
Dr. Diego Maiocchi – University of Milano
Dr. Stefano Caccia – Politecnico di Milano
Dr. Enzo Mallardi – Politecnico di Milano
Dr. Marco Mandena – Politecnico di Milano