Progress Report

2/19/14Edward Cazalas

Current Focus

• Research Proposal to APS (due March 7th) • BN Resistance Measurement• GFET Position Response Model

GFET Position Response Model

0 100 200 300 400 500 600 700 800 900 10001

10

100

1000

f(x) = 76.5694051717808 exp( − 0.00868647223657142 x )f(x) = 88.94415126593 exp( − 0.00392556831363301 x )

f(x) = NaN exp( NaN x )10% (2 mW)Exponential (10% (2 mW))1% (200 μW)Exponential (1% (200 μW))0.1% (20 μW)

Distance From Graphene (μm)

Phot

ocur

rent

(μA

)

GFET Position Response Model

0 100 200 300 400 500 600 700 800 900 10001E-03

1E-02

1E-01

1E+00f(x) = 1.0010924215093 exp( − 0.006668074019 x )

Distance From Graphene (μm)

Tran

spor

t Fac

tor

GFET Position Response Model

SORMA (with Dr. Trivelpiece)• Study spatial resolution and efficiency of thin-film MCP system• Thermal Neutron Capture

– BN– LiF– Gd, Gd2O3

• Resolution and Efficiency tradeoff – Increase in film thickness increases neutron capture– Increase in film thickness also increases reaction particle radial straggling, worsening

resolution

• Use GEANT4 to analyze effect of film composition and thickness on efficiency and spatial resolution

• Work Due May 26th• SORMA Conference: June 9-13, Abstract Due Feb. 28th

Study of GFET Response in Thermal Neutron Flux (Chris Sopko)

• Use MCNP to study graphene response to thermal neutron with a variety of geometries

• Start with BC/SiC devices (in-construction at Purdue)• Experiment in thermal beam port, simulations can be matched

(publication possible with successful experimental results)• Work Due March 28th

• ANS Student Conference: April 3-6

Study of Graphene Damage in GFET Architectures (Michael Moore)

• Use MCNP to simulate and study graphene damage due to direct and indirect damage pathways from fast and thermal neutrons

• Neutron sensitive and Si-based devices

• Currently, no work on this in literature (potential publication, simulation only)

• Work Due March 28th

• ANS Student Conference: April 3-6