Progress in Compound Semiconductor Materials IV...

Progress in CompoundSemiconductor Materials IV—Electronic and Optoelectronic

Applications

www.cambridge.org© in this web service Cambridge University Press

Cambridge University Press978-1-107-40914-9 - Materials Research Society Symposium Proceedings: Volume 829:Progress in Compound Semiconductor Materials IV—Electronic and Optoelectronic ApplicationsEditors: Gail J. Brown, Robert M. Biefeld, Claire Gmachl, M. Omar Manasreh and Karl UnterrainerFrontmatterMore information

http://www.cambridge.org/9781107409149

http://www.cambridge.org


MATERIALS RESEARCH SOCIETYSYMPOSIUM PROCEEDINGS VOLUME 829

Progress in CompoundSemiconductor Materials IV—Electronic and Optoelectronic

ApplicationsSymposium held November 29-December 3, 2004, Boston, Massachusetts, U.S.A.

EDITORS:

Gail X BrownAFRL/MLPS, Materials and Manufacturing Directorate

Wright Patterson Air Force Base, Ohio, U.S.A.

Robert M. BiefeldSandia National Laboratories

Albuquerque, New Mexico, U.S.A.

Claire GmachlPrinceton University

Princeton, New Jersey, U.S.A.

ML Omar ManasrehUniversity of Arkansas

Fayetteville, Arkansas, U.S.A.

Karl UnterrainerTechnical University Vienna

Vienna, Austria

Materials Research SocietyWarrendale, Pennsylvania






cambridge university press Cambridge, New York, Melbourne, Madrid, Cape Town, Singapore, São Paulo, Delhi, Mexico City

Cambridge University Press32 Avenue of the Americas, New York ny 10013-2473, USA

Published in the United States of America by Cambridge University Press, New York

www.cambridge.orgInformation on this title: www.cambridge.org/9781107409149

Materials Research Society506 Keystone Drive, Warrendale, pa 15086http://www.mrs.org

© Materials Research Society 2005

This publication is in copyright. Subject to statutory exceptionand to the provisions of relevant collective licensing agreements, no reproduction of any part may take place without the written permission of Cambridge University Press.

This publication has been registered with Copyright Clearance Center, Inc.For further information please contact the Copyright Clearance Center,Salem, Massachusetts.

First published 2005 First paperback edition 2012

Single article reprints from this publication are available throughUniversity Microfilms Inc., 300 North Zeeb Road, Ann Arbor, mi 48106

CODEN: MRSPDH

isbn 978-1-107-40914-9 Paperback

Cambridge University Press has no responsibility for the persistence oraccuracy of URLs for external or third-party internet websites referred to inthis publication, and does not guarantee that any content on such websites is,or will remain, accurate or appropriate.

Effort sponsored by the Air Force Office of Scientific Research, Air Force Material Command, US AF, under FA9550-04-1-0259. The U.S. Government is authorized to reproduce and distribute reprints for Governmental purposes notwithstanding any copyright notation thereon. The views and conclusions herein are those of the authors and should not be interpreted as necessarily representing the official policies or endorsements, either expressed or implied, of the Air Force Office of Scientific Research or the U.S. Government.






CONTENTS

Preface xv

Materials Research Society Symposium Proceedings ...xvi

NANOSTRUCTURESI

Atomic Force Microscopy and Spectroscopy of Self-Assembled InAsSb Quantum Dots Grown on InPSubstrates by MOCVD 3

Yongkun Sin, Hyun I. Kim, Gary W. Stupian, andYueming Qiu

Quantum-Dot Molecules for Potential Applications inTerahertz Devices 9

Valeria Gabriela Stoleru, Elias Towe, Chaoying Ni,and Debdas Pal

8 Intersubband Transitions in Ino.3Gao.7As/GaAsMultiple Quantum Dots of Varying Dot-Sizes 15Y.C. Chua, Jie Liang, B.S. Passmore, E.A. DeCuir,M.O. Manasreh, Zhiming Wang, and GJ. Salamo

* (110) InAs Quantum Dots: Growth, Single-DotLuminescence and Cleaved Edge Alignment 21

D. Wasserman, E.A. Shaner, S.A. Lyon, M. Hadjipanayi,A.C. Maciel, and J.F. Ryan

* The Definition of Multiple Bandgaps in Quantum-DotMaterial by Intermixing 33

A. Catrina Bryce, John H. Marsh, Dan A. Yanson,Olek P. Kowalski, and Shin-Sung Kim

Optical Characterization of Hierarchically Self-AssembledGaAs/AlGaAs Quantum Dots 43

F. Marabelli, A. Rastelli, O.G. Schmidt, G. Beaurin,M. Geddo, and G. Guizzetti

8 Virtual Fabrication of Small Ga-As/P and In-As/PClusters With Pre-Designed Electronic Pattern Structure 49Liudmila A. Pozhar, Alan T. Yeates, Frank Szmulowicz,and William C. Mitchel

* Invited Paper

v






Thermal Stability of InGaAs Quantum Dots Under LargeTemperature Transients 55

R. Rangarajan, V.C. Elarde, and J.J. Coleman

POSTER SESSION

Structural and Optical Effects of Capping Layer Materialand Growth Rate on the Properties of Self-AssembledInAs Quantum Dot Structures 63

Gabriel Agnello, Vadim Tokranov, Michael Yakimov,Matthew Lamberti, Yuegui Zheng, and Serge Oktyabrsky

Vertical and In-Plane Electrical Transport in InAs/InPSemiconductor Nanostructures 69

K.O. Vicaro, J.R.R. Bortoleto, H.R. Gutierrez, L. Nieto,A.A.G. von Zuben, A.C. Seabra, P.A. Schulz, andM.A. Cotta

Structural Investigation of InAs/InGaAs/InPNanostructures: Origin and Stability of Nanowires 75

L. Nieto, H.R. Gutierrez, J.R.R. Bortoleto,R. Magalhaes-Paniago, and M.A. Cotta

Electric Field Enhancement of Dark Current Generationin Detectors 81

James P. Lavine

Longitudinal Modes in InAlGaAs/AlGaAs High-PowerLaser Diodes 87

B.S. Passmore, Y.C. Chua, M.O. Manasreh, andJ.W. Tomm

Heterostructures With Strained InGaAs Quantum Wellsfor RCE Photodiode Applications in the 1.8-2 urn SpectralRange 93

Jadwiga Zynek, Agata Jasik, Jaroslaw Gaca, Marek Wojcik,Wlodzimierz Strupinski, Jaroslaw Rutkowski, Artur Wnuk,and Krzysztof Klima

Good Temperature Performances of 870 nm ResonantCavity Light Emitting Diode (RCLED) 99

Lih-Wen Laih, Yi-Hao Wu, Li-Hong Laih,Rong-Moo Hong, Hao-Chung Guo, Jung-Lung Yu,Yu-Hsiang Huang, Yi-An Chang, Ren-Jiun Chang,Chun-Hui Yang, and I-Tsung Wu

VI






Electrical Measurement of Recombination Lifetime inBlue Light Emitting Diodes 105

M.A. Awaah, R. Nana, and K. Das

Application of Low Temperature InP Wafer BondingTowards Optical Add/Drop Multiplexer Realization I l l

J. Arokiaraj, S. Vicknesh, and A. Ramam

Short-Period Strain-Balanced GaAsi_xNx/InAs(N)Superlattices Lattice-Matched to InP(OOl): A NewMaterial for 0.4-0.6 eV Mid IR Applications 117

L. Bhusal, A. Alemu, and A. Freundlich

The Er3+ and Yb3+-Related Emission From Er,YbCo-Implanted Alo.7oGao.3oAs/GaAs Substrates Preparedby MOCVD Method ....i 123

Tomoyuki Arai and Shin-ichiro Uekusa

Annealing Effects of ZnO Nanorods on DC InorganicElectroluminescent Device Characteristics 127

Shinya Sasaki, Hiroshi Miyashita, Takashi Kimpara,Tomomasa Satoh, and Takashi Hirate

Zinc Oxide Nanocluster Formation by Low Energy IonImplantation 133

I. Muntele, P. Thevenard, C. Muntele, B. Chhay, andD.Ila

Fabrication of ZnO Coated ZnS:Mn2+ Nanoparticles 139Shinji Ishizaki, Yusuke Kusakari, andMasakazu Kobayashi

O Defect Structures in Undoped and Doped ZnO FilmsStudied by Solid State Diffusion 145Haruki Ryoken, Isao Sakaguchi, Takeshi Ohgaki,Naoki Ohashi, Yutaka Adachi, and Hajime Haneda

Electrical Properties of ZnO Thin Films Deposited byPulsed Laser Deposition 151

S.P. Heluani, G. Simonelli, M. Villafuerte, G. Juarez,A. Tirpak, G. Braunstein, and F. Vignolo

Growth and Characterization of ZnO Nanonail 157H.W. Seo, D. Wang, Y. Tzeng, N. Sathitsuksanoh,C.C. Tin, MJ. Bozack, J.R. Williams, and M. Park

vn






Synthesis and Characterization of ZnO Nanoparticles 163I.U. Abhulimen, X.B. Chen, J.L. Morrison,V.K. Rangari, L. Bergman, and K. Das

O Raman Spectroscopy of V and Co Doped ZnOCeramics and Thin Films 169K. Samanta, N. Awasthi, B. Sundarakannan,P. Bhattacharya, and R.S. Katiyar

Intersubband Transitions in GaN/AlxGai_xN MultiQuantum Wells 175

E.A. DeCuir Jr., Y.C. Chua, B.S. Passmore,J. Liang, M.O. Manasreh, J. Xie, H. Morkoc,

A. Asghar, I.T. Ferguson, and A. Payne

Electrical and Dielectric Behavior of Pb(Mgi/4Nii/4W1/2)O3Ceramics 183

Adolfo Franco Junior

Preparation and Luminescent Properties of SrS:Ceby Addition of Sulphur as a Co-Activator inSrSO4:Ce(SO4)2.4H2O by Carbothermal Reduction 189

P. Thiyagarajan, M. Kottaisamy, K. Sethupathi, andM.S.R. Rao

NANOSTRUCTURESII

* InAs Quantum Dots for Optoelectronic Device Applications 199K. Stewart, S. Barik, M. Buda, H.H. Tan, andC. Jagadish

Superfluorescence of Ion Beam Synthesized Dense-PackedEmbedded CdSe Nanoclusters 207

H. Karl, I. GroBhans, P. Huber, and B. Stritzker

Synthesis of Highly Photoluminescent CdTe Nanocrystalsand Their Incorporation Into Glass Matrices 213

Norio Murase and Chunliang Li

The General Synthesis of Nanostructured V/VI Semiconductors 219Paul Christian and Paul O'Brien

* Invited Paper

vin






EMITTERS, MA TERIALS ANDDEVICES I

Ultrashort Pulse Generation With SemiconductorModelocked Lasers Using Saturable Absorbers Based onIntersubband Transitions in GaN/AlGaN Quantum Wells 227

Faisal R. Ahmad, Paul George, Jahan Dawlaty,Fahan Rana, and William J. Shaff

* Spectroscopic Analysis of External Stresses inSemiconductor Quantum-Well Materials 233

Jens W. Tomm, Mark L. Biermann, B.S. Passmore,M.O. Manasreh, A. Gerhardt, and Tran Q. Tien

EMITTERS, MATERIALS ANDDEVICES II

Processing of Deeply Etched GaAs/AlGaAs QuantumCascade Lasers With Grating Structures 245

S. Golka, M. Austerer, C. Pflugl, W. Schrenk, andG. Strasser

Zener Tunneling of Light in an Optical Superlattice 251Mher Ghulinyan, Zeno Gaburro, Lorenzo Pavesi,Claudio J. Oton, Costanza Toninelli, andDiederik S. Wiersma

O Dispersion Engineering of Three-Dimensional SiliconPhotonic Crystals: Fabrication and Applications 257Sriram Venkataraman, Garrett Schneider, Janusz Murakowski,Shouyan Shi, and Dennis W. Prather

INFRARED DETECTORSAND MATERIALS

Correlation Between Photoreflectance Spectra andElectrical Characteristics of InP/GaAsSb DoubleHeterojunction Bipolar Transistors 267

Hiroki Sugiyama, Yasuhiro Oda, Haruki Yokoyama,Takashi Kobayashi, Masahiro Uchida, andNoriyuki Watanabe

* Invited Paper

IX






Roughness Analysis of Episurfaces Grown on Ion-BeamProcessed GaSb Substrates 273

K. Krishnaswami, D.B. Fenner, S.R. Vangala,C. Santeufemio, M. Grzesik, L.P. Allen, G. Dallas,and W.D. Goodhue

Improved Performance of GaSb-Based MIR PhotodetectorsThrough Electrochemical Passivation in Sulphur ContainingSolutions 279

A. Piotrowska, E. Papis, K. Golaszewska, R. Lukasiewicz,E. Kaminska, T.T. Piotrowski, R. Kruszka, A. Kudla,J. Rutkowski, J. Szade, A. Winiarski, A. Wawro, andM. Aleszkiewicz

High Speed Ge Photodetectors on Si Platform for GHzOptical Communications in C+L Bands 285

Jifeng Liu, Jurgen Michel, Douglas D. Cannon,Wojciech Giziewicz, D. Pan, David T. Danielson,Samerkhae Jongthammanurak, John Yasaitis,Kazumi Wada, Clifton G. Fonstad, andLionel C. Kimerling

ELECTRONIC MA TERIALSAND DEVICES

High Quality MPCVD Epitaxial Diamond Film for PowerDevice Application 293

Jie Yang, Weixiao Huang, T.P. Chow, and James E. Butler

* Prospect for Ill-Nitride Heterojunction MOSFETStructures and Devices 301

M.A.L. Johnson, D.W. Barlage, and Dave Braddock

First-Principles Calculation of Electron Mobilities inUltrathin SOI MOSFETs 313

Matthew H. Evans, Xiaoguang Zhang,John D. Joannopoulos, and Sokrates T. Pantelides

Nickel Silicide Work Function Tuning Study in Metal-Gate CMOS Applications 319

Jun Yuan, Grant Z. Pan, Yu-Lin Chao, andJason C.S. Woo

* Invited Paper






ZnO I

Metal-Oxide Semiconductor Field-Effect TransistorsUsing Single ZnO Nanowire 327

Young-Woo Heo, B.S. Kang, L.C. Tien, Y. Kwon,J.R. La Roche, B.P. Gila, F. Ren, S. J. Pearton, andD.P. Norton

Preparation of Ultraviolet Light Emitting ZnONanoparticles Via a Novel Synthesis Route 333

Yuntao Li, Richard D. Yang, S. Tripathy, H.-J. Sue,N. Miyatake, and R. Nishimura

* ZnO Spintronics and Nanowire Devices 339David P. Norton, Young-Woo Heo, L.C. Tien, M.P. Ivill,Y. Li, B.S. Kang, Fan Ren, J. Kelly, A.F. Hebard, andStephen Pearton

* Electrical and Optical Properties of n-Type and p-Type ZnO 351D.C. Look and B. Claflin

x Towards p-Type Doping of ZnO by Ion Implantation 361V.A. Coleman, H.H. Tan, C. Jagadish, S.O. Kucheyev,M.R. Phillips, and J. Zou

POSTER SESSION

New Routes to Metal Chalcogenide Nanostructures 369Paul Christian and Paul O'Brien

Properties of Gallium Selenide Doped With Sulfur 375Valeriy G. Voevodin, Svetlana A. Bereznaya,Zoya V. Korotchenko, Aleksandr N. Morozov,Sergey Yu. Sarkisov, Nils C. Fernelius, andJonathan T. Goldstein

Nominal PbSe Nano-Islands on PbTe: Grown by MBE,Analyzed by AFM and TEM 383

Peter Moeck, Mukes Kapilashrami, Arvind Rao,Kirill Aldushin, Jeahuck Lee, James E. Morris,Nigel D. Browning, and Patrick J. McCann

* Invited Paper

XI






Optical Properties of CdSe and CdTe NanoparticlesEmbedded in SiO2 Films 389

P. Babu Dayal, B.R. Mehta, and P.D. Paulson

New Electroluminescence Spectrum From Co-DopedZnS:(Mn,Si) Films Prepared by Chemical VaporDeposition With Laser Ablation 395

Makoto Ozawa, Tomomasa Satoh, and Takashi Hirate

Composition Dependence of the Judd-Ofelt IntensityParameters in TeO2-PbF2 : Tm3+ Glasses 401

Idris Kabalci, Gonul Ozen, Adnan Kurt, andAlphan Sennaroglu

Growth and Crystal Structure of Alq3 Single Crystals.A New Structure Showing n-n and CH-TT Interactions 407

Ali N. Rashid and Donald C. Craig

Preparation of Carbon Nano-Materials Using ArcDischarge in Liquid 417

Y. Suda, H. Kawasaki, T. Ohshima, S. Nakashima,S. Kawazoe, and T. Toma

Dopant Activation in Bulk Germanium and Germanium-on-Insulator 423

Y.-L. Chao, S. Prussin, J.C.S. Woo, and R. Scholz

Electronic and Optical Properties of SiGe Alloys WithinFirst-Principles Schemes 429

G. Cappellini, G. Satta, M. Palummo, and G. Onida

Ab Initio Calculations for the Electronic Spectra of Cubicand Hexagonal Boron Nitride 435

Guido Satta, Giancarlo Cappellini, Valerio Olevano, andLucia Reining

Transport Properties of Polycrystalline SiGe Thin FilmsGrown on SiO2 443

Minoru Mitsui, Keisuke Arimoto, Junji Yamanaka,Kiyokazu Nakagawa, Kentarou Sawano, andYasuhiro Shiraki

Study of Germanium Diffusion in HfO2 Gate Dielectric ofMOS Device Application 449

Qingchun Zhang, Nan Wu, L.K. Bera, and Chunxiang Zhu

xn






Site-Specific Formation of Nanoporous Silicon on Micro-Fabricated Silicon Surfaces 455

Fung Suong Ou, Laxmikant V. Saraf, and Donald R. Baer

Beam Induced Lateral Epitaxy of GaAs on a GaAs/SiTemplate 461

Shigeya Naritsuka, Koji Saitoh, Toshiyuki Kondo, andTakahiro Maruyama

Novel Noncontact Thickness Metrology for PartiallyTransparent and Nontransparent Wafers for BackendSemiconductor Manufacturing 467

Wojciech J. Walecki, Vitali Souchkov, Kevin Lai,Phuc Van, Manuel Santos, Alexander Pravdivtsev,S.H. Lau, and Ann Koo

Dielectric Properties of Semiconductors by TDDFT inReal-Space and Real-Time Approach 473

Yasunari Zempo and Nobuhiko Akino

ZnOII

Pt/Au and W/Pt/Au Schottky Contacts to Bulk n-ZnO 479Kelly Ip, Brent Gila, Andrea Onstine, Eric Lambers,Young-Woo Heo, David Norton, Stephen Pearton,Jeffrey LaRoche, and Fan Ren

Preparation of SrS:Ce/ZnO Core-Shell NanoparticlesUsing Reverse Micelle Method 485

Yusuke Kusakari, Shinji Ishizaki, andMasakazu Kobayashi

* ZnO/GaN Heteroepitaxy 491K.W. Jang, D.C. Oh, T. Minegishi, H. Suzuki,T. Hanada, H. Makino, M.W. Cho, and T. Yao

DILUTE NITRIDES

Near Band-Edge and Excitonic Behavior of GaAsNEpilayers Grown by Chemical Beam Epitaxy 505

J.A.H. Coaquira, L. Bhusal, W. Zhu, A. Fotkatzikis,M.-A. Pinault, A.P. Litvinchuk, and A. Freundlich

* Invited Paper

xin






Charge Coupled Cyclotron Motion of Electrons and Holesin InGaAsN Epitaxial Layers 511

H.E. Porteanu, O. Loginenko, F. Koch, G. Dumitras,L. Geelhaar, and H. Riechert

Nitrogen Induced Optical Phonon Shift in GaNyAsi_y

Studied by Raman Scattering 517Li-Lin Tay, David J. Lockwood, and James A. Gupta

MBE-Grown GaNAsBi Matched to GaAs With 1.3-junEmission Wavelength 523

Masahiro Yoshimoto, Wei Huang, and Kunishige Oe

Author Index 529

Subject Index 535

O Ribbon Award Winner

x Trophy Award Winner

xiv






PREFACE

Symposium B, "Progress in Compound Semiconductor Materials IV—Electronic andOptoelectronic Applications," held November 29-December 3 at the 2004 MRS Fall Meeting inBoston, Massachusetts, has again brought together an outstanding group of researchers reportingon their most recent results and newly gained insights. In keeping with tradition, the symposiumcovered a wide range of topics spanning all kinds of opto- and microelectronic materials, growthand synthesis, devices, experimental techniques, modeling tools, and applications; wavelengthranges span from the UV to the THz, and into the GHz modulation range.

This proceedings volume is a highly representative collection of reviewed papers followingfrom presentations at Symposium B, making this volume an excellent and up-to-date snapshot ofoptoelectronics and related fields in 2004/2005.

We would like to thank all of the authors of this proceedings volume for their contributions andhard work; many thanks also to our reviewers. We would also like to thank our sponsors, the AirForce Office of Scientific Research and the Air Force Research Laboratory, for their generousfinancial support!

We wish the reader much fun and educational reading!

Gail J. BrownRobert M. BiefeldClaire GmachlM. Omar ManasrehKarl Unterrainer

February 2005






MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS

Volume 807— Scientific Basis for Nuclear Waste Management XXVII, V.M. Oversby, L.O. Werme, 2004,ISBN: 1-55899-752-0

Volume 808— Amorphous and Nanocrystalline Silicon Science and Technology—2004, R. Biswas,G. Ganguly, E. Schiff, R. Carius, M. Kondo, 2004, ISBN: 1-55899-758-X

Volume 809— High-Mobility Group-IV Materials and Devices, M. Caymax, E. Kasper, S. Zaima, K. Rim,P.F.P. Fichtner, 2004, ISBN: 1-55899-759-8

Volume 810— Silicon Front-End Junction Formation—Physics and Technology, P. Pichler, A. Claverie,R. Lindsay, M. Orlowski, W. Windl, 2004, ISBN: 1-55899-760-1

Volume 811— Integration of Advanced Micro- and Nanoelectronic Devices—Critical Issues and Solutions,J. Morais, D. Kumar, M. Houssa, R.K. Singh, D. Landheer, R. Ramesh, R. Wallace, S. Guha,H. Koinuma, 2004, ISBN: 1-55899-761-X

Volume 812— Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics—2004,R. Carter, C. Hau-Riege, G. Kloster, T-M. Lu, S. Schulz, 2004, ISBN: 1-55899-762-8

Volume 813— Hydrogen in Semiconductors, N.H. Nickel, M.D. McCluskey, S. Zhang, 2004,ISBN: 1-55899-763-6

Volume 814— Flexible Electronics 2004—Materials and Device Technology, B.R. Chalamala, B.E. Gnade,N. Fruehauf, J. Jang, 2004, ISBN: 1-55899-764-4

Volume 815— Silicon Carbide 2004—Materials, Processing and Devices, M. Dudley, P. Gouma, P.G. Neudeck,T. Kimoto, S.E. Saddow, 2004, ISBN: 1-55899-765-2

Volume 816— Advances in Chemical-Mechanical Polishing, D. Boning, J.W. Bartha, G. Shinn, I. Vos,A. Philipossian, 2004, ISBN: 1-55899-766-0

Volume 817— New Materials for Microphotonics, J.H. Shin, M. Brongersma, F. Priolo, C. Buchal, 2004,ISBN: 1-55899-767-9

Volume 818— Nanoparticles and Nanowire Building Blocks—Synthesis, Processing, Characterization andTheory, O. Glembocki, C. Hunt, C. Murray, G. Galli, 2004, ISBN: 1-55899-768-7

Volume 819— Interfacial Engineering for Optimized Properties III, C.A. Schuh, M. Kumar, V. Randle,C.B. Carter, 2004, ISBN: 1-55899-769-5

Volume 820— Nanoengineered Assemblies and Advanced Micro/Nanosystems, J.T. Borenstein,P. Grodzinski, L.P. Lee, J. Liu, Z. Wang, D. Mcllroy, L. Merhari, J.B. Pendry, D.P. Taylor,2004, ISBN: 1-55899-770-9

Volume 821— Nanoscale Materials and Modeling—Relations Among Processing, Microstructure andMechanical Properties, P.M. Anderson, T. Foecke, A. Misra, R.E. Rudd, 2004,ISBN: 1-55899-771-7

Volume 822— Nanostructured Materials in Alternative Energy Devices, E.R. Leite, J-M. Tarascon,Y-M. Chiang, E.M. Kelder, 2004, ISBN: 1-55899-772-5

Volume 823— Biological and Bioinspired Materials and Devices, J. Aizenberg, C. Orme, W.J. Landis,R. Wang, 2004, ISBN: 1-55899-773-3

Volume 824— Scientific Basis for Nuclear Waste Management XXVIII, J.M. Hanchar, S. Stroes-Gascoyne,L. Browning, 2004, ISBN: 1-55899-774-1

Volume 825E—Semiconductor Spintronics, B. Beschoten, S. Datta, J. Kikkawa, J. Nitta, T. Schapers, 2004,ISBN: 1-55899-753-9

Volume 826E—Proteins as Materials, V.P. Conticello, A. Chilkoti, E. Atkins, D.G. Lynn, 2004,ISBN: 1-55899-754-7

Volume 827E—Educating Tomorrow's Materials Scientists and Engineers, K.C. Chen, M.L. Falk,T.R. Finlayson, W.E. Jones Jr., L.J. Martinez-Miranda, 2004, ISBN: 1-55899-755-5

Volume 828— Semiconductor Materials for Sensing, S. Seal, M-I. Baraton, N. Murayama, C. Parrish, 2005,ISBN: 1-55899-776-8

Volume 829— Progress in Compound Semiconductor Materials IV—Electronic and OptoelectronicApplications, G.J. Brown, M.O. Manasreh, C. Gmachl, R.M. Biefeld, K. Unterrainer, 2005,ISBN: 1-55899-777-6

Volume 830— Materials and Processes for Nonvolatile Memories, A. Claverie, D. Tsoukalas, T-J. King,J. Slaughter, 2005, ISBN: 1-55899-778-4

Volume 831— GaN, A1N, InN and Their Alloys, C. Wetzel, B. Gil, M. Kuzuhara, M. Manfra, 2005,ISBN: 1-55899-779-2

Volume 832— Group-IV Semiconductor Nanostructures, L. Tsybeskov, D.J. Lockwood, C. Delerue,M. Ichikawa, 2005, ISBN: 1-55899-780-6






MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS

Volume 833— Materials, Integration and Packaging Issues for High-Frequency Devices II, Y.S. Cho,D. Shiffler, C.A. Randall, H.A.C. Tilmans, T. Tsurumi, 2005, ISBN: 1-55899-781-4

Volume 834— Magneto-Optical Materials for Photonics and Recording, K. Ando, W. Challener, R. Gambino,M. Levy, 2005, ISBN: 1-55899-782-2

Volume 835— Solid-State Ionics—2004, P. Knauth, C. Masquelier, E. Traversa, E.D. Wachsman, 2005,ISBN: 1-55899-783-0

Volume 836— Materials for Photovoltaics, R. Gaudiana, D. Friedman, M. Durstock, A. Rockett, 2005,ISBN: 1-55899-784-9

Volume 837— Materials for Hydrogen Storage—2004, T. Vogt, R. Stumpf, M. Heben, I. Robertson, 2005,ISBN: 1-55899-785-7

Volume 838E—Scanning-Probe and Other Novel Microscopies of Local Phenomena in NanostructuredMaterials, S.V. Kalinin, B. Goldberg, L.M. Eng, B.D. Huey, 2005, ISBN: 1-55899-786-5

Volume 839— Electron Microscopy of Molecular and Atom-Scale Mechanical Behavior, Chemistry andStructure, D. Martin, D.A. Muller, E. Stach, P. Midgley, 2005, ISBN: 1-55899-787-3

Volume 840— Neutron and X-Ray Scattering as Probes of Multiscale Phenomena, S.R. Bhatia, P.G. Khalifah,D. Pochan, P. Radaelli, 2005, ISBN: 1-55899-788-1

Volume 841— Fundamentals of Nanoindentation and Nanotribology HI, D.F. Bahr, Y-T. Cheng, N. Huber,A.B. Mann, K.J. Wahl, 2005, ISBN: 1-55899-789-X

Volume 842— Integrative and Interdisciplinary Aspects of Intermetallics, M.J. Mills, H. Clemens, C-L. Fu,H. Inui, 2005, ISBN: 1-55899-790-3

Volume 843— Surface Engineering 2004—Fundamentals and Applications, J.E. Krzanowski, S.N. Basu,J. Patscheider, Y. Gogotsi, 2005, ISBN: 1-55899-791-1

Volume 844— Mechanical Properties of Bioinspired and Biological Materials, C. Viney, K. Katti, F-J. Ulm,C. Hellmich, 2005, ISBN: 1-55899-792-X

Volume 845— Nanoscale Materials Science in Biology and Medicine, C.T. Laurencin, E. Botchwey, 2005,ISBN: 1-55899-793-8

Volume 846— Organic and Nanocomposite Optical Materials, A. Cartwright, T.M. Cooper, S. Kama,H. Nakanishi, 2005, ISBN: 1-55899-794-6

Volume 847— Organic/Inorganic Hybrid Materials—2004, C. Sanchez, U. Schubert, R.M. Laine, Y. Chujo,2005, ISBN: 1-55899-795-4

Volume 848— Solid-State Chemistry of Inorganic Materials V, J. Li, M. Jansen, N. Brese, M. Kanatzidis, 2005,ISBN: 1-55899-796-2

Volume 849— Kinetics-Driven Nanopatterning on Surfaces, E. Wang, E. Chason, H. Huang, G.H. Gilmer,2005, ISBN: 1-55899-797-0

Volume 850— Ultrafast Lasers for Materials Science, MJ. Kelley, E.W. Kreutz, M. Li, A. Pique, 2005,ISBN: 1-55899-798-9

Volume 851— Materials for Space Applications, M. Chipara, D.L. Edwards, S. Phillips, R. Benson, 2005,ISBN: 1-55899-799-7

Volume 852— Materials Issues in Art and Archaeology VII, P. Vandiver, J. Mass, A. Murray, 2005,ISBN: 1-55899-800-4

Volume 853E—Fabrication and New Applications of Nanomagnetic Structures, J-P. Wang, P.J. Ryan,K. Nielsch, Z. Cheng, 2005, ISBN: 1-55899-805-5

Volume 854E—Stability of Thin Films and Nanostructures, R.P. Vinci, R. Schwaiger, A. Karim, V. Shenoy,2005, ISBN: 1-55899-806-3

Volume 855E—Mechanically Active Materials, K J. Van Vliet, R.D. James, P.T. Mather, W.C. Crone, 2005,ISBN: 1-55899-807-1

Volume 856E—Multicomponent Polymer Systems—Phase Behavior, Dynamics and Applications, K.I. Winey,M. Dadmun, C. Leibig, R. Oliver, 2005, ISBN: 1-55899-808-X

Volume 858E—Functional Carbon Nanotubes, D.L. Carroll, B. Weisman, S. Roth, A. Rubio, 2005,ISBN: 1-55899-810-1

Volume 859E—Modeling of Morphological Evolution at Surfaces and Interfaces, J. Evans, C. Orme, M. Asta,Z. Zhang, 2005, ISBN: 1-55899-811-X

Volume 860E—Materials Issues in Solid Freeforming, S. Jayasinghe, L. Settineri, A.R. Bhatti, B-Y. Tay, 2005,ISBN: 1-55899-812-8

Volume 86IE—Communicating Materials Science—Education for the 21st Century, S. Baker, F. Goodchild,W. Crone, S. Rosevear, 2005, ISBN: 1-55899-813-6

Prior Materials Research Society Symposium Proceedings available by contacting Materials Research Society






Progress in Compound Semiconductor Materials IV...

Documents

Transcript of Progress in Compound Semiconductor Materials IV...