Product / Process Change Notice - Mouser Electronics · 2020. 1. 22. · The above information is...

The above information is the exclusive intellectual property of Winbond Electronics and shall not be disclosed, distributed or reproduced without permission from Winbond.

Table No.: 1110-0001-08-A

Product / Process Change Notice

No.: Z200-PCN-DM201912-06-A Date: December 30, 2019

Change Title : W74M64JV 3.3V Authentication Flash to replace W74M64FV 3.3V Authentication Flash Memories

Change Classification: Major Minor with customer notification Minor without customer notification Change item : Design Raw Material Wafer FAB Assembly Testing Packing Others

Affected Product(s) :

W74M64FVSSIQ

Description of Change(s)

W74M64JV 3.3V Authentication Flash Memories is using Winbond 58nm Flash technology, It is function-compatible with W74M64FV 3.3V Authentication devices and offering improved performance, features and availability.

1. Individual Block/Sector array protection.

2. Special OTP protection. (Please refer the W74M64JV Authentication datasheet)

Reason for Change(s) :

1. W74M64FV Authentication EOL. (Please refer to attachment IV for details)

2. New generation features improvement and Command backward compatible. (Please refer to attachment I comparison table)

Impact of Change(s) : ( positive & negative )

Form : No Change

Fit : No Change

Function : No Concern (Please refer to attachment I)

Reliability : No Concern (Please refer to attachment II)

Hazardous Substances: No Concern (Please refer to attachment III)

Qualification Plan/ Results :

Based on Winbond W74M Reliability report, the new product meets our criteria and no quality concern (refer to Attachment II in details)

Implementation Plan :

Please refer to attachment IV for details.

Date Code: onward Lot No: onward Proposed first ship date: Please refer to attachment IV.

Originator: (QA)

Approval: (QA Dept. Manager)

Approval: (QRA Director)

The above information is the exclusive intellectual property of Winbond Electronics and shall not be disclosed, distributed or reproduced without permission from Winbond.

Table No.: 1110-0001-08-A

Contact for Questions & Concerns

Name: Betty Huang TEL:886-3-5678168 (ext.76549) FAX: 886-3-5796124

Address : No. 8,Keya 1st Rd., Daya Dist., Central Taiwan Science Park, Taichung City 42881,Taiwan

E-mail: [email protected]

Customer Comments: Note: Please sign this notice, and return to Winbond contact within 30 days. If no response is received within 30 days, this Change Request will be assumed to meet your approval.

Major change: Approval Disapproval Conditional Approval : .

Minor change with customer notification: Recognition

Minor change without customer notification: Approval Disapproval

Conditional Approval :

Comment:

Date:

Dept. name:

Person in charge:

Table No. : 1260-0009-02-A

Winbond Electronics Corporation 6F., No.38, Gaotie 1st Rd., Jhubei City,

Hsinchu County 30273, Taiwan R.O.C.

Product Obsolescence Notice

W74M64FV 3.3V Authentication Memories Notification Date: January 03, 2020

Dear Valued Customer,

This letter is to notify you of Winbond’s intention to terminate production of the W74M64FV 3.3V Authentication memory, and replace it with the W74M64JV 3.3V Authentication Flash. Replacement part number is listed below:

Winbond Current PN

(58nm F-Series)

Winbond Primary Replacement PN (58nm J-Series)

W74M64FVSSIQ W74M64JVSSIQ

The W74M64JV 3.3V Authentication device features:

Features

a) Command backward compatible with W74M64JV 3.3V Authentication Flash

b) Clock operation up to 104MHz, SPI with Single / Dual / Quad / QPI

c) Individual Block/Sector array protection

Please refer to the table below for your particular product last time order date and Winbond last shipment date and use this table to determine your last time buys and subsequent request dates. Winbond Electronics reserves the right to limit last time buy quantities based on capacity and material availability. Please notify Winbond as soon as possible if there are any concerns with these this schedule.

Part

Number

Notification

Date

Last Order

Date

Last Ship

Date

Part

Number

Reliability

Report

Mass

Production

W74M64FV Jan./03/

2020

Jul./03/

2020

Jan./03/

2021 W74M64JV

Sep./20

2019

Oct./30/

2019

Jooweon (JW) Park

Technology Executive of Flash Marketing

Table No. : 1260-0009-02-A

Hazardous Substances Check List

Raw material name: W74M64JVSSIQ

Element Specification Measured Data DL Result

Cd

(Cadmium, 鎘) <20ppm ND 0.8 PASS

Pb

(Lead, 鉛) <700ppm ND 0.4 PASS

Hg (Mercury, 汞) <200ppm ND 0.4 PASS

Cr

(Chromium, 鉻) <700ppm 13ppm 0.8 PASS

Br

(Bromine,溴) <250ppm ND 0.1 PASS

Cl

(Chlorine, 氯) <630ppm ND 15 PASS

Sb

(Antimony, 銻) <700ppm ND 2.5 PASS

註: DL 為儀器之有效偵測極限，量測值< DL，則標示ND。

Conclusion : Accept Reject

W74M00AV, W74M25FV, W74M12FV, W74M64FV, W74M32FV,W74M16DV, W74M80DV, W74M40CL,

W74M20CL, W74M25JV, W74M12JV, W74M64JV

Publication Release Date: 9/11/2019

-1- Reliability Engineering Department

PART NO. : W74M12FV

FUNCTION: Secure Authentication FLASH

PROCESS: 90nm CMOS (DPTM)

RA ENGINEER :

RA MANAGER :

RELIABILITY REPORT

W74M00AV, W74M25FV, W74M12FV, W74M64FV, W74M32FV, W74M16DV, W74M80DV, W74M40CL,

W74M25JV, W74M12JV, W74M64JV

W74M25JV, W74M12JV, W74M64JV

W74M20CL




- 2 - Reliability Engineering Department

~SUMMARY~

W74M12FV for 8-SOP 208 mil passed the reliability items

as follows:

. Early Life Fail Rate : 0/3000 pcs

. High Temp. Operating Life test : 0/231 pcs

. ESD-HBM : 0/36 pcs

. ESD-CDM : 0/9 pcs

. Latch -Up Test : 0/18 pcs





---CONTENTS---

Ⅰ. PRODUCT DESCRIPTION

A. Introduction

B. Features

C. Function Block

Ⅱ. LIFE TEST

A. Introduction

1. Early Life Fail Rate (ELFR)

2. High Temp. Operating Life Test (HTOL)

B. Test Results

1. Early Life Fail Rate(ELFR)

2. High Temp. Operating Life Test (HTOL)





Ⅲ. ESD & LATCH-UP

A. Introduction

1. ESD

2. LATCH-UP

B. Test Results

1. ESD

2. LATCH-UP





I. PRODUCT DESCRIPTION

A. Introduction

The W74M12FV (128M-bit) Serial Flash memory provides a storage

solution for systems with limited space, pins and power. The W74M series

offers flexibility and performance well beyond ordinary Serial Flash

devices. They are ideal for code shadowing to RAM, executing code

directly from Dual/Quad SPI (XIP) and storing voice, text and data. The

device operates on a single 2.7V to 3.6V power supply with current

consumption as low as 4mA active and 1μA for power-down. All devices

are offered in space-saving packages.

The W74M12FV support the standard Serial Peripheral Interface (SPI),

Dual/Quad I/O SPI: Serial Clock, Chip Select, Serial Data I/O0 (DI), I/O1

(DO), I/O2, and I/O3. SPI clock frequencies of up to 104MHz are

supported allowing equivalent clock rates of 208MHz (104MHz x 2) for

Dual I/O and 416MHz (104MHz x 4) for Quad I/O when using the Fast

Read Dual/Quad I/O instructions. These transfer rates can outperform

standard Asynchronous 8 and 16-bit Parallel Flash memories.

The device supports JEDEC standard manufacturer and device ID and

SFDP Register, a 64-bit Unique Serial Number and three 256-bytes

Security Registers.

The W74M series is also equipped with an enhanced authentication

security feature by Monotonic Counter (MC). It provides a high level

secured communication between the flash device and the controller to

reduce the system vulnerabilities to hardware attacks.





B. Features

New Family of SpiFlash Memories

– W74M12FV: 128M-bit / 16M-byte

– Standard SPI: CLK, /CS, DI(IO0), DO(IO1)

– Dual SPI: CLK, /CS, IO0, IO1

– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3

– Software & Hardware Reset

Highest Performance Serial Flash

– 104MHz Single, Dual/Quad SPI clocks

– 208/416MHz equivalent Dual/Quad SPI

– 50MB/S continuous data transfer rate

– More than 100,000 erase/program cycles

– More than 20-year data retention

Low Power, Wide Temperature Range

– Single 2.7 to 3.6V supply

– 4mA active current, <1μA Power-down (typ.)

– -40°C to +85°C operating range

Flexible Architecture with 4KB sectors

– Uniform Sector/Block Erase (4K/32K/64K-Byte)

– Program 1 to 256 byte per programmable page

– Erase/Program Suspend & Resume

Advanced Security Features

– Software and Hardware Write-Protect

– Power Supply Lock-Down and OTP protection

– Top/Bottom, Complement array protection

– Individual Block/Sector array protection

– 64-Bit Unique ID for each device

– Discoverable Parameters (SFDP) Register

– 3X256-Bytes Security Registers with OTP locks

– Monotonic Counters (MC)

– Volatile & Non-volatile Status Register Bits

W74M00AV, W74M25FV, W74M12FV, W74M64FV, W74M32FV,W74M16DV, W74M80DV, W74M40CL, W74M20CL, W74M25JV, W74M12JV, W74M64JV



Space Efficient Packaging

– 8-pin SOIC / VSOP 208-mil

– 8-pin PDIP 300-mil

– 8-pad WSON 6x5-mm / 8x6-mm

– 16-pin SOIC 300-mil (additional /RESET pin)

– 24-ball TFBGA 8x6-mm

– Contact Winbond for KGD and other options




C. Function Block




II. LIFE TEST

A. Introduction


1.1 SCOPE

ELFR test is performed to accelerate infant mortality failure

mechanisms which are thermally activated. This can be achieved by

stressing the devices with bias at high temperature.

1.2 TEST CONDITION

Temp ambient = 125C, Vdd = 3.6V, dynamic stressing, Td = 168 hrs.

(JEDEC74)

2. High-Temperature Operating Life Test (HTOL)

2.1 SCOPE

HTOL test is performed to accelerate failure mechanisms which are

thermally activated. This can be achieved by stressing the devices

with bias at high temperature.

2.2 TEST CONDITION

Temp ambient = 125C, Vdd = 3.6V, dynamic stressing, Td = 1000 hrs.

(JESD22-A108)




B. Test Results


RUN Lot No 168 Hrs Remark

#1 E337M0004 0/1000

#2 E337M0003 0/1000

#3 E339M0001 0/1000

2. High-Temperature Operating Life Test (HTOL)

2.1 SUMMARY TABLE

RUN Lot No 500 Hrs 1000 Hrs Remark

#1 E337M0004 0/77 0/77

#2 E337M0003 0/77 0/77

#3 E339M0001 0/77 0/77

*Criteria : Acc/Rej = 0/1

2.2 FAILURE RATE CALCULATION

WHERE : CHI-SQUARE Function CL: Confidence Level

N : No of Failures EDH: Equivalent Device Hour

F R TCL N

EDH

X. .( )( , )

21 2 2

2

2

X




Test

Item

Dev. Hours

at

Tj=126.1C

Equiv. Dev.

Hours at

Tj=55C

No. of

Failure

Failure

Rate

at 55C

HTOL 231000 208944577 0

4.39

FIT

Based on CL = 60% and Activation Energy = 1.08 eV

Tj Ta Pd ja

Where: Tj= junction temp, Ta=125℃ (ambient temp)

Pd=15.12mW (power dissipated on the device)

Θja=77.8℃/W (thermal resistance from junction to ambient)




III. ESD AND LATCH-UP

A. Introduction

1. ESD

1.1 SCOPE

ESD test is to evaluate the immunity of device to electrostatic

discharge.

1.2 TEST CONDITION

Human Body Model (HBM): JS-001

Charge Device Model (CDM): JS-002

2. Latch-Up

2.1 SCOPE

Latch-Up test is to evaluate the immunity of the devices to latch-up.

2.2 TEST CONDITION

JEDEC STD 78, Temp = 25 C, VDD = Max. Operating Voltage




B. Test Results

1. ESD

1.1 Human Body Model

Run LOT# POSITIVE NEGATIVE Remark

#1 E337M0004 0/6 0/6

#2 E337M0003 0/6 0/6

#3 E339M0001 0/6 0/6

*Criteria : Acc/Rej = 0/1.

*| SPEC | : >2KV

1.2. Charge Device Model

Run LOT# POSITIVE / NEGATIVE Remark

#1 E337M0004 0/3

#2 E337M0003 0/3

#3 E339M0001 0/3


*| SPEC | : >750V

2. Latch-Up

Run LOT# POSITIVE NEGATIVE Remark

#1 E337M0004 0/3 0/3

#2 E337M0003 0/3 0/3

#3 E339M0001 0/3 0/3





*| SPEC. | : I-Test > 200mA

Vsupply over voltage Test>1.5x max supply voltage

A Global Supplier of Advanced Memory Solutions

Comparison table

(W74M64FV vs W74M64JV)

Comparison table

2Oct. 2019

Oct. 2019 3

Product / Process Change Notice - Mouser Electronics · 2020. 1. 22. · The above information is...

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