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© 2009
Copyrights © Yole Développement SARL. All rights reserved.
Nokia
Memory Applications:Packaging & Integration Trends
– 2009 Report –
How 3-D integration will challenge
and reshape the memory industry
Infineon
© 2009 • 2Copyrights © Yole Développement SARL. All rights reserved.
Macro Industry Trends
• Wireless is everywhere, growing and enabling new market segments (smart-
phones, net books, pocket computing devices)
– CONNECTIVIY and INTEGRATION are the main drivers
• Demands for data is increasing as well:
– Faster pipes, more pipes (WAN, LAN, PAN), performance, concurrency
– HD multimedia is coming
• Complexity and concurrency require improved power consumption and are
stressing current architectures:
– Need for more efficient interconnect methods for pin count relief and low power
consumption
• As a results, everything is pointing to more and more “local” memory/storage
at the device level
– More and more quantity and get memory closer to logic for higher performance
– Cloud computing could remove the need for increasing “memory storage” content at
the device level. However, this will not happen before many years from now (> 2015)
© 2009 • 3Copyrights © Yole Développement SARL. All rights reserved.
Memory BOM growth forecast in Mobile Handsets
• Memory content grows even while other Semiconductor content falls
– Driven by growing Density requirements
• Memory revenue CAGR 2007-2011 ~ 5.1%
0%
10%
20%
30%
40%
50%
60%
70%
80%
90%
100%
2006 2007 2008 2009 2010 2011
Worldwide Mobile Phone Semiconductor Revenue Share by Type of Content
Image processor
Apps processors and coprocessors
Onboard Memory (Flash/PSRAM/MDRAM)
Radio/connectivity
Baseband (Digital + Analog)
Source: IDC 2007
22%
28%
© 2009 • 4Copyrights © Yole Développement SARL. All rights reserved.
Memory Applications / Markets
TODAY:
• RAM memories are historically driven by computing applications (desktop computers, server engines…)
• NOR Flash is mostly used to store and have fast reading access to OS data (applications of operating
systems) used in most of today‟s consumer devices (cell-phone, DSCs, portable media players, printers…)
• NAND Flash has emerged recently for storage based applications in most consumer applications
TOMOROW:
• New generation memories (PRAM, FeRAM, MRAM..) are being developed and introduced on the market for
potential replacement of NOR Flash & SRAM into embedded memory applications
• “Solid State” memory is the next killer application for adoption of NAND Flash in volume:
– SSDs to replace HDD (hard disk magnetic drives) mainly in:
• Personal computing markets (notebooks, net book, MIDs …)
• Enterprise / Data server markets
– General memory content also growing in Multimedia / Gaming / Micro-Cards applications
– New package technologies are needed to adapt to tighter footprint requirements (e.g. 3D TSV)
• RAM (SRAM / DRAM) memory integration is driven by computing / wireless Logic application:
– DDR3 / DDR4 DRAM: TSV soon require to answer to density versus bandwidth limitation
– Wireless Logic Trend is to combine into one single package all memory content in order to control:
• Multi-mode cellular communication devices (related to GSM / 3G / LTE: Analog & digital baseband chips)
• Multimedia and computing devices (related to Application processor and graphic accelerator chips)
• Wireless connectivity devices (related to Bluetooth, WLAN, GPS, NFC chips)
– Computing Logic Trend to stack high capacities of DRAM cache memories for next generation computing perf.
• CPU/GPU graphic engines applications
• HPC, Server, FPGAs…
© 2009 • 5Copyrights © Yole Développement SARL. All rights reserved.
Overall memory wafer shipment forecasts (12’’ wspy eq.)
© 2009 • 6Copyrights © Yole Développement SARL. All rights reserved.
Impact on Memory Packaging & Integration
• Memory ASPs will continue to decrease and will reach their “cost versus density” limits with latest
advancements of lithography technology (45nm, 32nm to 22nm node?)
• On the other hand, memory packaging and integration is becoming more and more challenging for
different reasons:
– NAND Flash memory quantity is increasing fast in data storage applications especially (SSDs, Micro-SD cards,
MCP/SiP/PoP packages): stringent density and form factor requirements to stack more silicon in ever less space
– NOR Flash will be progressively replaced by NAND+SRAM combination and New generation memories (e.g. PC-RAM)
– RAM based memories:
• Memory integration of RAM memories (on-chip, in-package…) is growing fast: DRAM product usage is mostly
doubling Year to Year, especially in mobile / nomadic devices
• Interfacing Logic to external DRAM is more and more difficult due to increasing requirements on bandwidth,
performance, power consumption and pin-counts accessibility:
– Possibility for Fan-out WLP integration in some portion of the low-end DRAM market
– Integration of DRAM in stacked memories SiP packages (FC-BGAs, POP…): new package & interconnect
technologies are needed to adapt to tighter footprint requirements (e.g. 3-D TSV interconnects)
– Embedded RAM:
o Embedded DRAM is already available today, but still “emerging”
Driven by performance motivations („CPU + memory‟ or „Baseband + memory‟ that are stacked in a
face to face manner)
eDRAM with TSVs are coming soon (> 2010) and will enable higher performance and bandwidth first
and will provide later on direct access / interfacing to the external “cache memory” SiP package
o Managing internal SRAM memory in Wireless Logic SOC applications is still possible but die sizes
are expanding with time: cost impact is becoming more and more critical
Efficient re-partioning of memory content will be needed at some point:
• Embedded memories holds promising future by stacking both eDRAM and eFlash on top of 3D-
SOCs for Cost driven motivations
• Not yet area/cost effective but coming soon!
© 2009 • 7Copyrights © Yole Développement SARL. All rights reserved.
3-D integration of memories with TSV
Example of 3-D integrated construction (Image courtesy of DuPont Electronics)
PCB
© 2009 • 8Copyrights © Yole Développement SARL. All rights reserved.
3D TSV memory wafer shipments per Industry:
2013 forecast
© 2009 • 9Copyrights © Yole Développement SARL. All rights reserved.
Report - Table of Content (1/2)
• Introduction to memory technologies …. Page 1
– DRAM / SRAM / NOR Flash / NAND Flash
• Overall memory shipment market (in Units)
• Overall memory market revenues (in $B)
– Trends for next generation Non-Volatile memory
technologies:
• M-RAM / PC-RAM: status of industrialization and
near-term opportunities
• Memory Applications & Markets …...……. Page 18
– Current & future applications driving DRAM / SRAM /
NAND / NOR Flash memory demand
• Per industry:
– Market forecasts in Munits shipment and in
300mm wafers equivalent
– Breakdown for Telecom / Computing /
Consumer / Servers / Automotive / Industrial
& Medical markets
• Per product / application:
– 2008-2015 market forecasts in Munits
shipment and in 300mm wafers equivalent
– Breakdown for Desktop PCs / Notebooks /
Net books / MID / Regular & Blade Servers /
Data storage servers / Portable media
players / Portable game stations / Memory
Cards / USB Stick / Cell-phones / Game
stations / Set-Top Box / HD camcorders /
DSC / SLR / Automotive / Base stations /
Portable navigation Sys – GPS / Digital TV /
Workstations / Memory Upgrades / HDD /
Printer / Analog TV / DVD Player / HPC / ATE
systems
• Memory Packaging & Integration Trends …. Page 33
– Architectures and memory die quantity analysis in current
product‟s generation:
• Focus on Cell-phones, SSDs, DSCs, servers, Portable
media players and game stations
– Single Die versus Stacked packaging:
• Key market metrics and packaging trends for memory
integration using TSOP / FBGA / PoP / PiP / WLP Fan-in /
Fan-out WLP packages
• Impact of 3-D integration technologies on the
memory market ………..…………………………..……. Page 55
– Applications and market drivers for 3D integration with
memories
– “Embedded 3D-SOC memories” Versus “3-D Stacked
memories in SiP”:
• Definitions, players and roadmaps
• 2008-2015 market forecasts in Munits shipment and in
300mm wafers equivalent
– „‟3D Chip Stacking‟‟ Vs. „‟Circuit Transfer 3D‟‟ Vs.
„‟Monolithic 3D‟‟ integration
• Definitions, players and roadmaps
• 2008-2015 market forecasts in Munits shipment and in
300mm wafers equivalent
© 2009 • 10Copyrights © Yole Développement SARL. All rights reserved.
Report - Table of Content (2/2)
• … (continued from previous slide) Impact of 3-D
integration technologies on the memory
market:
– MLC versus SLC Flash memory architectures: impact
on adoption of 3-D TSV integrated memories
• Definitions, players and roadmaps
• 2008-2015 market forecasts in Munits shipment
and in 300mm wafers equivalent
– Silicon interposers for 3D TSV memories:
• Definitions, players and roadmaps
• 2008-2015 market forecasts in Munits shipment
and in 300mm wafers equivalent
– TSV manufacturing cost challenge:
• What is the process and cost of TSV in
memories today?
• What is the targeted cost for a broad adoption
of 3-D TSV into low cost memory markets?
– Overall Roadmap for 3-D integration with Memories
(2008 – 2015)
– Impact of 3-D integration with TSV on DRAM / SRAM
/ NAND / NOR Flash memory markets
• 2008-2015 market forecasts in Munits shipment and
in 300mm wafers equivalent
• Breakdown per mount technology: forecast for
Single die / Wire Bond stacked / 3-D TSV memory
• Breakdown per application:
– Opportunities of 3-D integrated memory in
DDR3 / DDR4 / Wireless Application
processors / Wireless Baseband - DSP /
SSDs / Graphic memory / Micro-Cards /
Embedded & Cache CPU-GPU / FPGAs
• Player‟s strategy for 3-D integration with
memories ……………….…………………………………... Page 85
– Supply chain analysis: Memory fabs / CMOS
foundries / IDMs / OSATs/ Fab-less / Integrator
player activities
– Infrastructure & pre-competitive alliances in 3-D IC
system integration
• Perspectives & Conclusions ……………….……. Page 98
• Annexes ….…………………………………………………. Page 104
© 2009 • 11Copyrights © Yole Développement SARL. All rights reserved.
Extracted slides from the report (sample)
© 2009 • 12Copyrights © Yole Développement SARL. All rights reserved.
Key features & Benefits
• Companies cited in the report :
– AMD, Amkor, Chartered Semiconductor, Dai Nippon Printing, Dongbu HiTek, Ibiden,
IBM, IMFlash, Intel, Elpida, Excico, Freescale, Fujitsu, Hynix, Micron, Nanya, NEC,
Numonyx, Qualcomm, Renesas, TSMC, Texas Instruments, Samsung, SanDisk, Seagate,
Shinko, SOITEC / Tracit, Sony, StatsChipPac, STMicroelectronics, Spansion, SPIL,
Swissbit, Tezzaron, Toshiba, UMC, Xilinx, Ziptronix and more …
• Who should buy this report ?
– Strategy & Marketing executives from the equipment, materials or chip manufacturing
semiconductor industries who need to position rapidly about the impact of 3-D
integration on the complex, high volume and fast moving memory market.
• Key features:
– Up-to-date Key metrics of the memory market:
• Per application (more than 30 products screened)
• Per type of memory (DRAM / SRAM / NOR / NAND Flash)
• In Munits shipment and in 300mm wafer equivalent
– Impact of 3-D integration on the memory market and applications
– Key players strategy for 3D integration with memories
– Cost analysis & challenges for TSV manufacturing:
• How to make TSV interconnects happen in high volume / low cost memory markets?
© 2009 • 13Copyrights © Yole Développement SARL. All rights reserved.
Contact us!
• For more information on this report, please contact David Jourdan at:
– + 33 472 83 01 80
• For more information on our activity & services:
www.yole.fr www.i-micronews.com/3DIC.asp
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