Preparation to Launch

Corridor, Class 1000

Advanced Cleaning LabClass10

Genesis Processing&StorageLab

Class 10

GowningRoom,Class 5000

Entry

Controlledstorage,Class 5000

Anteroom

Ultra Pure WaterManufacturing Facility

Laminar Air Flow

ULPA Air Filters for ISO 4 (Class 10)

Raised Grated Floor

Returned Air Flow

Genesis Regime Collector Design

JSC Wafer Testing

ISO 4 (Class 10) Cleanroom Design

Assembly of the Science Payload Canister

ISO 4 (Class 10) Airflow Design

Installing the raised floor

Ultrapure Water and Ultrasonic Cleaning and Inspection of the array collector grids.

Installation of nine ultrapure hexagonal array materials for solar wind regime capture.

Shipment of Science Canister Payload from JSC for integration with spacecraft at Lockheed Denver facility.

Completion of Array Material Installation

Final preparations and closure of the science canister payload.

Next Stop, Lagrange 1 Solar Wind Exposure.

Lockheed Martin Denver Facility Assembly of the Genesis Spacecraft

Science Canister Payload Integration

Final Preparations and Testing

Genesis Spacecraft Shipping to Kennedy Space Center

Launch Preparations at KSC

Launch of Discovery Mission Genesis

Genesis Flight Plan

Genesis Capturing

the Sun

Dr. Don Burnett CalTech

Genesis Lead PI

FIB Stratigraphic Cross-Section Pull Flown Si Fragment

2nd Pt coat

1st Pt coat SiO2 Layer

Native Oxide

Radiation Damage

Zone

Silicon Substrate

50 nm TEM Image

20 nm

Pt Coat

Radiation Damage Zone ~ 61.0 nm thick

Silicon Substrate

Silicon Surface

TEM Dark Field Image

Acknowledgements

TEM Image Team: Lindsey Keller & Roy Christofferson ARES at NASA Johnson Space Center

FIB Pull Team: Nick Teslich, John Bradley & Giles Graham

Lawrence Livermore National Laboratory

Genesis Curation Team: Judy Allton & Melissa Rodriguez ARES at NASA Johnson Space Center

5 nm

Pt Coat

SiO2 Native Oxide ~ 2.5 nm thick

Radiation Damage

Zone

Vacancy & Divacancy Si Lattice Alteration

Interstitials & Di-interstitials Si Lattice Alteration

TEM Results and Future Work The B/C array silicon substrate lattice structure shows signs of multiple vacancies and interstitial nodes in approximately the first 600 Å below the native oxide layer. This is primarily due to the accumulation of bombarding hydrogen and helium ions from the solar wind. The radiation damaged zone can be interpreted roughly as the bulk solar wind implantation zone. Therefore, the Genesis Mission was successful in capturing atoms from the sun as seen by the TEM images.

The thickness measurement of the damaged region can also provide a gross check for the concentration of hydrogen atoms collected by the Genesis mission. This radiation damage zone can also provide an insight into the fluence threshold required to alter Si materials, which is below 2 X 1016 atoms/cm2 for solar wind exposure.

The spacecraft was in continual Halo orbit at L1 while the bulk collector arrays were deployed and is the first look at solar wind radiation damage outside the magnetosphere at L1. This study provides a direct measurement of how solar wind effects silicon over time. Since silicon is a well studied semiconductor material, a future model of the damage threshold could be used for assessing lifespan of future spacecraft and solar panel materials in space outside the magnetosphere when exposed to solar wind.

610 Å of Silicon Lattice Alteration

Nominal Silicon Lattice Structure

34.7 Å of SiO2 Native Oxide on Surface

EMA Modeled Layer

SiO2 Modeled Layer

Si Modeled Layer

Judy Allton Solar Wind Curator (NASA)

Michael Calaway Laboratory Lead (ESCG)

Melissa Rodriguez Sample Processor (ESCG)

Genesis Curation Team

Genesis Curation Laboratory’s Mission

Protect and curate the United States limited resource of solar wind samples for future studies.

Allocate solar wind samples to the multinational science community for study as directed by NASA and CAPTEM.

Characterize all flown samples and develop a solar wind sample catalog.

Maintain an auditable inventory.

Conduct wafer alteration and contamination assessments.

Remove particular and molecular contamination.

Solar Wind Sample Characterization

Assess Material Type > 15,000 samples from 5 array frames once held 9 different types

of ultra-pure semiconductor wafers. Other Genesis Materials: Concentrator Targets, bulk metallic

glass, gold foil, polished aluminum, & Mo-Pt.

Measure size and area of sample Assess the four types of Solar Wind Regime via wafer thickness: Bulk (B/C), coronal mass ejection (E), high speed (H), & Low speed (L) solar wind). Assess Particle Contamination > 0.3 micron size particles using optical microscopy Assess Molecular Contamination > 1 angstrom thick films using spectroscopic ellipsometry Assess silicon types (float-zone or Czochralski) via FT-IR Spectroscopy

Genesis Sample Cabinets

Genesis Sample Cabinet in Lunar RSV

Ellipsometer

Microscope

Digimatic Indicator

Wafer Thickness: Preliminary Solar Wind Regime Identification

B & C Array (Bulk Solar Wind) = 700 µm E Array (Coronal Mass Ejections) = 650 µm H Array (High Speed Solar Wind) = 600 µm L Array (Low Speed Solar Wind) = 550 µm

Digimatic Indicator Automated Leica DM6000M scanning Microscope

2 mm

300 µm 50 µm

Spectroscopic Ellipsometry Measurements

Generated and Experimental

Wavelength (nm)300 600 900 1200 1500 1800

Ψ in

deg

rees

0

10

20

30

40

Exp E 55Exp E 60°Exp E 65°Exp E 70°Exp E 75°Exp E 80°Exp E 85°

Experimental Data

Wavelength (nm) Angle of Incidence (°)

Ψ in

deg

rees

300600

9001200

15001800 50

6070

8090

0

10

20

30

40

Generated and Experimental

Wavelength (nm)300 600 900 1200 1500 1800

∆ in

deg

rees

0

30

60

90

120

150

180

Model Fit Exp E 55°Exp E 60°Exp E 65°Exp E 70°Exp E 75°Exp E 80°Exp E 85°

Experimental Data

Wavelength (nm) Angle of Incidence (°)

∆ in

deg

rees

300600

9001200

15001800 50

6070

8090

0306090

120150180

Stereomicroscope FT-IR Spectrometer

60172 FZ Si 4000 to 40060173 CFZ Si 4000 to 40060172 FZ Si Flown 4000 to 60060173 CZ Si FlownFlown CZ Si 60169

0.10 0.12 0.14 0.16 0.18 0.20 0.22 0.24 0.26 0.28 0.30 0.32 0.34 0.36 0.38 0.40 0.42 0.44 0.46 0.48 0.50 0.52

Abso

rban

ce

500 1000 1500 2000 2500 3000 3500 4000 Wavenumbers (cm-1)

CZ-Si Peak at 1106 (cm^-1)

FT-IR Determines FZ or CZ Silicon

Concentrator Target Characterization UCLA MegaSIMS Fit-Check

60003 SiC Target X = 0.5

0

5

10

15

20

25

30

35

3500 5500 7500 9500 11500 13500 15500

Wavelength

PSI

Spot 9Spot 8Spot 7Spot 5Spot 14Spot 16Spot 18

60003 SiC Target Gradient

0

5

10

15

20

25

30

35

3500 5500 7500 9500 11500 13500 15500

Wavelength

PSI

Spot 6Spot 5Spot 2Spot 3Spot 4

UPW/Megasonic Cleaning Macro Particle Decontamination