Preparation, Structure, and Photochemistry of 2-Disilanyl-1,4-benzoquinones.
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2003 Organo-silicon compounds Organo-silicon compounds S 0060 Preparation, Structure, and Photochemistry of 2-Disilanyl-1,4-benzoquinones. — Partial lithiation of the disilanylated compounds (III) yields an intermediate anion which rearranges on warming. The rearranged product is oxidized immediately to ben- zoquinones (IV). Their electronic absorption spectra display significant intramolecular charge-transfer interaction between disilane and benzoquinone moieties. Due to the characteristic intramolecular charge-transfer interaction, benzoquinones (IV) react photochemically in the presence of acetone to adducts (VI). The photoreactions of (IV) generate α-sila-m-quinonemethides (VII) as reactive intermediates, which are isolated in glass matrices. — (TSUTSUI, S.; SAKAMOTO*, K.; EBATA, K.; KABUTO, C.; SAKURAI, H.; Bull. Chem. Soc. Jpn. 75 (2002) 12, 2661-2665; Photodyn. Res. Cent., Inst. Phys. Chem. Res., Aoba, Sendai 980, Japan; Eng.) — H. Hoennerscheid 16- 172
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Transcript of Preparation, Structure, and Photochemistry of 2-Disilanyl-1,4-benzoquinones.
2003 Organo-silicon compounds
Organo-silicon compoundsS 0060 Preparation, Structure, and Photochemistry of 2-Disilanyl-1,4-benzoquinones.
— Partial lithiation of the disilanylated compounds (III) yields an intermediate anion which rearranges on warming. The rearranged product is oxidized immediately to ben-zoquinones (IV). Their electronic absorption spectra display significant intramolecular charge-transfer interaction between disilane and benzoquinone moieties. Due to the characteristic intramolecular charge-transfer interaction, benzoquinones (IV) react photochemically in the presence of acetone to adducts (VI). The photoreactions of (IV) generate α-sila-m-quinonemethides (VII) as reactive intermediates, which are isolated in glass matrices. — (TSUTSUI, S.; SAKAMOTO*, K.; EBATA, K.; KABUTO, C.; SAKURAI, H.; Bull. Chem. Soc. Jpn. 75 (2002) 12, 2661-2665; Photodyn. Res. Cent., Inst. Phys. Chem. Res., Aoba, Sendai 980, Japan; Eng.) — H. Hoennerscheid
16- 172
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