[PPT]Bipolar Junction Transistors: Basics - University of...
Transcript of [PPT]Bipolar Junction Transistors: Basics - University of...
Gain medium
Incoherent Light
Coherent Light
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Transistor/switch/amplifier – a 3 terminal device
Source
Drain
Gate
Valve
ArteryVein
Emitter Collector
Base
Ion Channel
Dam Laser Heart
Axonal conductionMOSFETBJT
All of these share a feature with…
• Output current can toggle between large and small (Switching Digital logic; create 0s and 1s)
• Small change in ‘valve’ (3rd terminal) creates Large change in output between 1st and 2nd terminal (Amplification Analog applications; Turn 0.5 50)
Example: BJT common emitter characteristics
Gain = 300
http://www.computerhistory.org/semiconductor/timeline.html#1940s
Aim of this chapter
• How can we get ‘Gain’?
• What is the structure of the device to get gain?
• What is the equation for gain?
• How can we use this equation to maximize gain?
• How can we model this device as a circuit element?
• What are its AC characteristics and speed?
Recall p-n junction
P N
W
Vappl > 0-+
N P
W
Vappl < 0-+
Forward bias, + on P, - on N (Shrink W, Vbi)
Allow holes to jump over barrier into N region as minority carriers
Reverse bias, + on N, - on P (Expand W, Vbi)
Remove holes and electrons awayfrom depletion region
I
V
I
V
So if we combine these by fusing their terminals…
P N
W
Vappl > 0-+
N P
W
Vappl < 0-+
Holes from P region (“Emitter”) of 1st PN junction driven by FB of 1st PN junction into central N region (“Base”)
Driven by RB of 2nd PN junction from Base into P region of2nd junction (“Collector”)
• 1st region FB, 2nd RB
• If we want to worry about holes alone, need P+ on 1st region
• For holes to be removed by collector, base region must be thin
Bipolar Junction Transistors: Basics
+
- +
-
IE IBIC
IE = IB + IC ………(KCL)
VEC = VEB + VBC ……… (KVL)
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BJT configurations
GAIN CONFIG
+
- +
-
IE IBIC
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Bipolar Junction Transistors: Basics
VEB, VBC > 0 VEC >> 0IE, IC > 0 IB > 0
VEB >-VBC > 0 VEC > 0 but smallIE > -IC > 0 IB > 0
VEB < 0, VBC > 0 VEC > 0IE < 0, IC > 0 IB > 0 but small
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Bipolar Junction Transistors: Basics
Bias Mode E-B Junction C-B JunctionSaturation Forward Forward
Active Forward ReverseInverted Reverse Forward
Cutoff Reverse Reverse
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BJT Fabrication
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PNP BJT Electrostatics
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PNP BJT Electrostatics
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NPN Transistor Band Diagram: Equilibrium
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PNP Transistor Active Bias Mode
Most holesdiffuse tocollector
Large injectionof Holes
Collector Fields drive holesfar away where they can’t return thermionically
Few recombinein the base
VEB > 0 VCB > 0
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P+ N P
nE(x’)
nE0
pB0
pB(x)
nC0
nC(x’’)
Forward Active minority carrier distribution
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PNP Physical Currents
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PNP transistor amplifier action
IN (small)
OUT (large)
Clearly this works in common emitterconfiguration
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Emitter Injection Efficiency - PNP
EnEp
Ep
E
Ep
III
II
10
ECIEp ICp
IEn ICn
IB
IE IC
Can we make the emittersee holes alone?
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Base Transport Factor
ECIEp ICp
IEn ICn
IB
IE IC
Ep
CpT I
I
10 T Can all injected holesmake it to the collector?
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Common Base DC current gain - PNP
Common Base – Active Bias mode:
IC = DCIE + ICB0
ICp = TIEp = TIEIC = TIE + ICn
DC = T
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Common Emitter DC current gain - PNP
Common Emitter – Active Bias mode:
IE = DCIB + ICE0
DC = DC /(1-DC)
IE
IB
IC
IC = DCIE + ICB0
= DC(IC + IB) + ICB0
IC = DCIB + ICB0 1-DC
GAIN !!
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Common Emitter DC current gain - PNP
T
Tdc
1
Thin base will make T 1Highly doped P region will make 1
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PNP BJT Common Emitter Characteristic