PIPS691 Gatan Operation Manual...Microsoft PowerPoint - PIPS User guide 2018 Author kosei Created...
Transcript of PIPS691 Gatan Operation Manual...Microsoft PowerPoint - PIPS User guide 2018 Author kosei Created...
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PIPS691 Gatan
Operation Manual
Note:The chamber pressure is < 10-4 Torr.The rotation control is in the ON position.The main tap of Ar gas is open.
c Copyright 2020, Tohoku university
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1. Sample Mounting
For SEM/EBSD For TEM(glue-type)
For TEM(clamp-type)
After pre-thinning by mechanical polishing, the sample disc will be mounted on a PIPS sample holder (DuoPost).
The sample should be located in the center of the clamp.
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2. DuoPost into the airlock chamber
Place the DuoPost into the airlock chamber.Replace the airlock cover.
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Monitor the backing vacuum pressure of the airlock chamber by the pressing the [ DP TEST ] button. The pressure is displayed on the Beam Energy digital display (center display).
3. Monitoring the airlock chamber vacuum pressure
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4. Vacuum drawing the airlock chamber
Press the [ VAC ] button not exceeding 10.0 of vacuum pressure.Instantly, press and release the button in an initial rough pumping.
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The airlock chamber pressure reaches the preset level, the greenVAC light will illuminate.Press the airlock control switch to [ lower ] the specimen mount.
5. Loading the DuoPost into the airlock chamber
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6. Confirmation of center position
Confirmation of the rotation center position.If the center position is shift, start from the 1. sample mounting to do it all over again.
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7. Set the ion-sputtering condition
Adjust the acceleration voltage and the incident ion-beam angle.
Standard condition:Voltage 3.5 – 5 keVAngle 2 – 4 degree
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8. Start the ion-sputtering
Set the time intervals and press the [ Start / Stop ] button.
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9. Unloading the DuoPpst
Press the upper part of the [ airlock control ] switch, which will raise the sample mount up to the airlock chamber. After 10 sec., Press the [ VENT ] button to vent the airlock chamber.
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Preparation for microscopy (SEM, EBSD)
Preparation Method ・ wet-etching
Advantage : Restraint of formation of damage/affected layer on surfaceDisadvantage: Complicated wet-etching conditions (Solutions, time and temperature..)
Huge difference in etching speed for microstructures and materials
・ mechanical polishingAdvantage : Simple method and equipmentsDisadvantage: Formation of damage/affected layer on surface
・ ion-millingAdvantage : Without any damage/affected layer on surface
Regular milling speed for all microstructures and materials
Disadvantage: Expensive equipment
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Ion-millingAr+ Ar+
sample
rotation
Precipitations
Damage/effected layer
Before ion-milling After ion-milling
Grain boundary
Twin boundary
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After ion‐milling