Physics of Semiconductors - Katsumoto...
Transcript of Physics of Semiconductors - Katsumoto...
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Physics of Semiconductors
Shingo Katsumoto
Department of Physics
and
Institute for Solid State Physics
University of Tokyo 13th 2016.7.11
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Outline today
Laughlin’s justification
Spintronics
Two current model
Spin injection
Spin-orbit interaction
Spin Hall effect
Topological insulator
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Review of IQHE Exact quantization
with universal constants
A sample with edges: Number of edge modes = filling factor n
Hall conductance of a single pair edge mode:
The edge current is scattering free for its strong chirality.
A sample without edge: : TKNN formula
Chern number is a topological invariant and an integer.
𝜈𝑐 = 1 for single Landau subband?
Bulk-Edge correspondence
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Laughlin’s discussion
Robert Laughlin
B
Φ
x
y
R. Laughlin, Phys. Rev. B 23, 5632 (1981).
Landau gauge
Magnetic flux Φ : X shift
Chern number =1
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Ch.7 Spintronics
Two current model
Spin injection
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Spin degree of freedom: A new paradigm
Charge (kinetic) freedom
𝑉BC
e-
e- e-
e-
e-
e- e+
e+
e+
e+
e+
𝐽𝐸 𝐽𝐶
Semiclassical transport
Quantum confinement
Vx
B ( T )
R H a l l ( h
/ e 2 )
R x x
( h / e
2 )
E
5 m 2 D G 0 K
n = 1
n = 2
3
4 5
6
0 2 4 6 8 1 0
0 . 2
0 . 4
0 . 6
0 . 8
1
0
0 . 1
0 . 2
0 . 3
Vy
Jx
B
Quantum Hall and topology
in solid state physics
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Spin degree of freedom: A new paradigm
Charge (kinetic) freedom
𝑉BC
e-
e- e-
e-
e-
e- e+
e+
e+
e+
e+
𝐽𝐸 𝐽𝐶
Vx
B ( T )
R H a l l ( h / e 2 )
R x x ( h
/ e 2 )
E
5 m 2 D G 0 K
n = 1
n = 2
3 4
5
6
0 2 4 6 8 1 0
0 . 2
0 . 4
0 . 6
0 . 8
1
0
0 . 1
0 . 2
0 . 3
Vy
Jx
B
Spin degree of freedom
Topological insulators
Spin-manipulation of
quantum information
Giant magnetoresistance
spin valve
Spin injection
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The two current model
Divide a current to the one with ↑ spin and the one with ↓ spin.
Drude:
Condition: spin diffusion length 𝜆𝑠 ≫ 𝑙 mean free path (or other lengths)
Spin polarized current:
drift diffusion
Nevill Mott
1905-1996
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Spin-dependent chemical potential
Einstein relation for metals:
Spin-dependent chemical potential
𝜖𝑠: local Fermi energy, 𝛿𝜖𝑠 : Shift from thermal equilibrium
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Spin current Spin current (simplest)
definition:
Angular momentum conservation:
With spin relaxation:
Charge conservation:
Steady state:
:spin diffusion equation :spin diffusion length
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Spin injection
FM NM
FM
NM
𝜇 𝜇
𝑗𝑐
M = F, N
𝜇↑
𝜇↑ 𝜇↓
𝜇↓
𝜇0
𝜇0
𝜌↑(𝐸) 𝜌↓(𝐸) 𝜌↑(𝐸) 𝜌↓(𝐸)
𝐸 𝐸 𝐸
𝜌↑(𝐸) 𝜌↓(𝐸) 𝜌↑(𝐸) 𝜌↓(𝐸)
𝐸
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Spin injection and detection
FM1
NM 𝜇↑
𝜇↑
𝜇↓
𝜇↓
𝜇0F1
𝜇0N
𝑗𝑐
FM2
𝜇0F2
Jedema et al. Nature 410, 345 (2001).
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Spin precession (review)
Zeeman Hamiltonian
From Heisenberg equation:
𝜔0
x
y
z
Larmor frequency
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Spin precession experiment
H (Oe)
- - - - -
-
DV
(m
V)
F M F M N M N M
j c
V
S C
G a t e
M g O
H
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Ch.7 Spintronics
Spin-orbit interaction
Spin Hall effect
Topological insulator (quantum spin Hall effect)
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Spin-orbit interaction (in electron motion)
: Spin-orbit interaction
BIA: Bulk inversion asymmetry
SIA: Structure inversion asymmetry
V
III
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SIA-SOI Rashba-type SOI Emmanuel Rashba
(Actually through the valence band)
𝐸±
𝑘
𝑚∗𝛼
ℏ2 −
𝑚∗𝛼
ℏ2
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SOI and SdH oscillation
1 2 0
2
4
6
V g = 1 . 0 V -
- 0 . 7
- 0 . 3
0
0 . 3
0 . 5
1 . 5
B ( T )
r x
x ( a
r b . )
T = 0 . 4 K
Nitta et al., Phys. Rev. Lett. 78, 1335 (1997).
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Spin Hall effect
Effective magnetic field
𝑘𝑥
𝑘𝑦
𝑘𝑥
𝑘𝑦
spin
effective field
k
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Spin Hall effect in an insulator
Remember k∙p approximation
Consider the case these are not zero. Then the discussion is in parallel with
the TKNN formula.
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Anomalous velocity and quantum spin Hall effect
Wave packet: Bloch wave expansion
Anomalous velocity
TKNN
Spin-subband
Chern number Spin Chern number
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Topological insulator: helical edge state
𝑘
𝐸
𝐸𝐹
Ordinary insulator
Topological insulator
0
y
Charge
conservation:
Extra spin flow at the edge
Helical edge mode:
Edge mode number = Chern number
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Topologically insulating quantum well
7.3nm
König et al., Science 318, 766 (2007).
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Summary
Charge (kinetic) freedom
𝑉BC
e-
e- e-
e-
e-
e- e+
e+
e+
e+
e+
𝐽𝐸 𝐽𝐶
Vx
B ( T )
R H a l l ( h / e 2 )
R x x ( h
/ e 2 )
E
5 m 2 D G 0 K
n = 1
n = 2
3 4
5
6
0 2 4 6 8 1 0
0 . 2
0 . 4
0 . 6
0 . 8
1
0
0 . 1
0 . 2
0 . 3
Vy
Jx
B
Spin degree of freedom
Topological insulators
Spin-manipulation of
quantum information
Giant magnetoresistance
spin valve
Spin injection
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Problem 1:
Let us consider a pn-junction of Si at the temperature 300K. In the p-layer
the acceptor (boron, B) concentration is 1021 m-3 and in the n-layer the donor
(phosphorous, P) concentration is 1020 m-3. The doping profile is abrupt.
(1) Obtain the built-in potential.
(2) Calculate the depletion layer widths for p- and n-layers at reverse
bias voltage -5V.
(3) Calculate the differential capacitance at reverse bias voltage -5V for
the area 1mm×1mm.
Let put another p-layer and make a pnp transistor (gedankenexperiment).
The hole diffusion length in the base is 10mm.
(4) Calculate hFE for base widths 0.5mm and 0.1mm. (Ignore depletion
layer widths, other non-ideal factors. Calculate under the simplest
approximation.)
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Problem 2:
Magnetic field (T)
The left figure shows the Shubnikov-de
Haas oscillation and the quantum Hall
effect in two-dimensional electrons.
(1) Calculate the electron concentration
from the low (<0.5T) field data.
(2) Something happened around 0.65T.
What is it?
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Problem 3:
Consider a double barrier resonant diode with GaAs as the well material
and Al0.4Ga0.6As as the barrier material. Lets adopt Eg=1.424 eV for GaAs
and Eg=1.424+1.265x+0.265x2 (eV) for AlxGa1-xAs and DEc:DEv =6:4. The
electron effective mass in GaAs is 0.067m0 and ignore the change in
AlxGa1-xAs. Consider n-type electrodes (note that in the lecture we
considered p-type).
(1) Obtain the transfer matrix of 5nm thickness GaAs- Al0.4Ga0.6As.
(2) Calculate the transmission probability of resonant diode with two 5nm
barriers and a 5nm well region as a function of incident energy (from 0
to the top of the barrier with an appropriate interval) and plot in a
figure.
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Problem 4:
Let us consider the rectangular potential illustrate in the
left.
(1) First consider the most coarse approximation.
Choosing a kinetic energy E determines the
effective potential with E/a. Now let us approximate
the potential with a rectangular potential of width
E/a, bottom V(0), infinite barrier height. Let m* be
the effective mass and obtain the eigen energies
from lower level with index n=1,2,..
(2) Compare the above result with more accurate one on
Airy functions.
(3) Also try comparison with Wenzel-Kramers-Brillouin
(WKB) approximation for wavefunction penetration
into the barrier.
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Problem 5: In the left figure the green region indicates
2DEG, 1 to 6 are the electric contacts, the
yellow regions are metallic gates. The
structure has a quantum point contact in the
middle. In the integer quantum Hall state
with filling factor 𝜈, the sample has ν edge
modes. With applying gate voltage, we can
tune the number of modes which transmit
through the QPC, to 𝜒. Other modes are
completely reflected by the QPC. The
current is through 1 and 4.
(1) Obtain the longitudinal resistance RL, which is measured from the voltage between 2
and 3 V23 or 6 and 5 V65.
(2) Obtain the Hall resistance RH, measured from V26 or V35.
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Problem 6:
Consider a 2DEG under IQHE with n =1. The edge modes can bring finite
current without energy dissipation and the resistance is zero. The
conductance of one-dimensional edge mode is then the inverse of the
resistance and infinity. Let write the quantum resistance h/e2 as Rq.
Two dimensional resistivity tensor:
Then the two dimensional conductivity tensor defined by the inverse of
resistivity tensor:
That is, 𝜎𝑥𝑥 = 0! Does the calculation contain an error? If it does, what
is the error? Or can you solve the puzzle?