Physical Phenomena for TeraHertz Electronic Devices
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Transcript of Physical Phenomena for TeraHertz Electronic Devices
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Physical Phenomenafor TeraHertz
Electronic DevicesJérémi TORRES
Institute of Electronics of the SouthUniversity Montpellier
France
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Outline
•TeraHertz : Generalities
•Physical phenomena
1. Plasma-waves
2. Optical-phonon resonance
3. Conclusions
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The High-Frequency Investigation Group
MicrowavesAntennas/
RadarsEM
CompatibilityRFID
TheoryMonte Carlo
HydrodynamicDrift-Diffusion
ExperimentsPhotoexcitation
THz devicesNear-field
EM cartography
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The TeraHertz “gap”
Low costCompact
Room temperature Continuous-wave
TunableIntegration
Electronics Photonicsf = 1012 Hz, 300 GHz - 10 THz, λ = 1 mm - 30 μm
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Proc. of IEEE 23, 10 (2005)
Power vs frequency
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Optical THz DevicesIndirect
• Laser Beating + photoconductor
• Femtosecond laser + nonlinear cristal
Difficulties: complexity, cost, magnetic field, maintenance,
temperature
Direct• Gas laser• Free electron laser• p-Ge laser• Quantum cascade laser
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Electronic THz Devices
Indirect• Multiplication
• Nonlinearities
Difficulties: current, temperature, contact resistance,
efficiency, noise
Direct• Gunn, RTD, Impatt diodes• Schottky, varactor diodes• Magnetron, Carcinotron• FETs, HEMTs
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Main Features of THz Radiation
•Non ionizing
•Strong interaction with molecules
•Transmitted through many materials
•Higher resolution than microwaves
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Applications in SpectroscopyPhysics: THz Time Domain Spectroscopy,
dynamics of electrons, holes, phonons
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Applications in SpectroscopyChemistry: chemical reactions, combustion,
pollution, environment control
(Grischkowski, Oklahoma State Univ.)
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Applications in SpectroscopyAstronomy: atmospheric window, detection of molecules, atoms, ionized gas
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Progr. Quant. Electr. 28, 1 (2004)
Applications in TelecommunicationsTeraHertz antennas, wireless
communication
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Applications in Imaging (T-Ray)
Inspection materials/devices/systems
Industry(Planken, Univ. Delft)
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Applications in Imaging (T-Ray)
Medicine
Tooth decay(TeraView)
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Applications in Imaging (T-Ray)
Medicine
Dermatology(Teraview)
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Courtesy of Teraview
Applications in Imaging (T-Ray)Security
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1. THz Nanotransistors
… exploiting plasma waves
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Experiments on InGaAs HEMTs
Origin of the peaks?
Appl. Phys. Lett. 80, 3433 (2002)
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THz oscillations from plasma-waves
3D plasma oscillations Analogy : harmonic oscillator
Practical applications : High Electron Mobility
Transistor
Tunable frequency with Vg
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Travelling plasma waves
vdrift+vplasmavdrift-vplasma
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Travelling plasma waves
Mascaret over the Dordogne riverhttp://www.archaero.com/mascaret.htm
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Stationary plasma waves
n = 1 f = 0.9 THz n = 3 f = 2.7 THz
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Plasma waves in HEMTs
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Plasma synchronization by optical beating
Appl. Phys. Lett. 89, 201101 (2006)
THz beating
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Detection of THz beating + THz generation
Appl. Phys. Lett. 89, 201101 (2006)
Experiments(detection)
Simulation(generation+detection)
Frequency (GHz)
⟨VDS⟩
δ VDS
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Resonant frequency vs swing voltage
3f0
f0
5f0
Provides frequency tuningIEEE J. Sel. Top. Quant. Electron. 14,
491 (2008)
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Enhancing detection
Experiments
Simulation
Journ. Appl. Phys. 106, 013717 (2009)
Modeling
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THz imaging with HEMT
Non resonant detection
F. Teppe et al., to be published (2009)
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Summary of plasma waves nanotransistors
Detector/EmitterRoom temperatureFrequency tuning
Integration
Emission mechanism?
Power?
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2. TeraHertz MASER
… or exploiting the optical-phonon transit-time resonance in nitrides
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Scattering rates in GaN at T=10 K
J. Appl. Phys. 89, 1161 (2001)
low energies: acoustic and impurity scatteringhigh energies: optical phonon emission
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The optical-phonon transit-time resonance
Energy
acceleration τE
optical
phonon
Scat
terin
g ra
teτ -
τ +
τ- : Average relaxation timeτE : Carrier transit time τ+ : Time for optical phonon emission
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Advantages of nitrides
Stronger electron-phonon couplingMuch sharper threshold
J. Appl. Phys. 89, 1161 (2001)
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InN, T=10 K
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InN, T=10 K
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InN, T=10 K
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InN, T=10 K
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Summary of amplification bands
Phys. Rev. B 76, 045333 (2007)
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Design of a cavity and emitted power
Gain depends on the electric field
large E
low E
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Summary of TeraHertz MASER
SimpleFrequency tuningHigh amplificationNo magnetic field
77 KHigh quality
materialHigh field
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Conclusions• Exciting field for theory and experiments
• Junction electronics/optics
• New phenomena, materials, devices, systems
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Sujet de stage
« Etude expérimentale des oscillations Gunn et de plasma
téraHertz dans des composants de la micro-électronique »